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Zhang G, Wang B, Wu H, Zhang J, Lian S, Bai W, Zhang S, Liu Z, Yang S, Ding G, Ye C, Zheng L, Wang G. Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations. NANO LETTERS 2024; 24:10062-10071. [PMID: 39038033 DOI: 10.1021/acs.nanolett.4c01917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.
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Affiliation(s)
- Guanglin Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Bingkun Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Huijuan Wu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Jinqiu Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Shanshui Lian
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Wenjun Bai
- Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China
| | - Shan Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Zhiduo Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Siwei Yang
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Guqiao Ding
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Caichao Ye
- Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China
| | - Li Zheng
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Gang Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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N GD, Mai TH, Gupta RK, Pham PV. Art etching of graphene. NANOSCALE HORIZONS 2024; 9:1230-1249. [PMID: 38958571 DOI: 10.1039/d4nh00077c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
The growth of graphene on a metal substrate using chemical vapor deposition (CVD), assisted by hydrocarbons such as CH4, C3H8, C2H6, etc. leads to the formation of carbon clusters, amorphous carbon, or any other structure. These carbon species are considered as unwanted impurities; thus a conventional etching step is used simultaneously with CVD graphene growth to remove them using an etching agent. Meanwhile, art etching is a specific method of producing controlled non-Euclidean and Euclidean geometries by employing intricate and precise etching parameters or integrated growth/etching modes. Agents such as H2, O2, CH4, Ar, and others are applied as art etching agents to support the art etching technology. This technique can generate nanopores and customize the properties of graphene, facilitating specific applications such as nanodevices, nanosensors, nanofilters, etc. This comprehensive review investigates how precursor gases concurrently induce graphene growth and art etching during a chemical vapor deposition process, resulting in beautifully etched patterns. Furthermore, it discusses the techniques leading to the creation of these patterns. Finally, the challenges, uses, and perspectives of these non-Euclidean and Euclidean-shaped art etched graphene geometries are discussed.
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Affiliation(s)
- Gayathri Devi N
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
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Pham PV, Mai TH, Dash SP, Biju V, Chueh YL, Jariwala D, Tung V. Transfer of 2D Films: From Imperfection to Perfection. ACS NANO 2024; 18:14841-14876. [PMID: 38810109 PMCID: PMC11171780 DOI: 10.1021/acsnano.4c00590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 04/03/2024] [Accepted: 04/12/2024] [Indexed: 05/31/2024]
Abstract
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.
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Affiliation(s)
- Phuong V. Pham
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Gothenburg 41296, Sweden
| | - Vasudevanpillai Biju
- Research
Institute for Electronic Science, Hokkaido
University, Hokkaido 001-0020, Japan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deep Jariwala
- Department
of Electrical and Systems Engineering, University
of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department
of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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Pham PV, Mai TH, Do HB, Vasundhara M, Nguyen VH, Nguyen T, Bui HV, Dao VD, Gupta RK, Ponnusamy VK, Park JH. Layer-by-layer thinning of two-dimensional materials. Chem Soc Rev 2024; 53:5190-5226. [PMID: 38586901 DOI: 10.1039/d3cs00817g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc 700000, Vietnam
| | - M Vasundhara
- Polymers and Functional Materials Department, CSIR-Indian Institute of Chemical Technology, Tarnaka, Hyderabad 500007, India
| | - Van-Huy Nguyen
- Centre for Herbal Pharmacology and Environmental Sustainability, Chettinad Hospital and Research Institute, Chettinad Academy of Research and Education, Kelambakkam-603103, Tamil Nadu, India
| | - Trieu Nguyen
- Shared Research Facilities, West Virginia University, Morgantown, WV 26506, USA
| | - Hao Van Bui
- Faculty of Materials Science and Engineering and Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University, Hanoi 100000, Vietnam
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan.
- Research Center for Precision Environmental Medicine, Kaohsiung Medical University, Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital, Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea.
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Qing F, Guo X, Hou Y, Ning C, Wang Q, Li X. Toward the Production of Super Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310678. [PMID: 38708801 DOI: 10.1002/smll.202310678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 04/10/2024] [Indexed: 05/07/2024]
Abstract
The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.
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Affiliation(s)
- Fangzhu Qing
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
| | - Xiaomeng Guo
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuting Hou
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Congcong Ning
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Qisong Wang
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xuesong Li
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
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Suh IY, Huo ZY, Jung JH, Kang D, Lee DM, Kim YJ, Kim B, Jeon J, Zhao P, Shin J, Kim S, Kim SW. Highly efficient microbial inactivation enabled by tunneling charges injected through two-dimensional electronics. SCIENCE ADVANCES 2024; 10:eadl5067. [PMID: 38701201 PMCID: PMC11067992 DOI: 10.1126/sciadv.adl5067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2023] [Accepted: 04/01/2024] [Indexed: 05/05/2024]
Abstract
Airborne pathogens retain prolonged infectious activity once attached to the indoor environment, posing a pervasive threat to public health. Conventional air filters suffer from ineffective inactivation of the physics-separated microorganisms, and the chemical-based antimicrobial materials face challenges of poor stability/efficiency and inefficient viral inactivation. We, therefore, developed a rapid, reliable antimicrobial method against the attached indoor bacteria/viruses using a large-scale tunneling charge-motivated disinfection device fabricated by directly dispersing monolayer graphene on insulators. Free charges can be stably immobilized under the monolayer graphene through the tunneling effect. The stored charges can motivate continuous electron loss of attached microorganisms for accelerated disinfection, overcoming the diffusion limitation of chemical disinfectants. Complete (>99.99%) and broad-spectrum disinfection was achieved <1 min of attachment to the scaled-up device (25 square centimeters), reliably for 72 hours at high temperature (60°C) and humidity (90%). This method can be readily applied to high-touch surfaces in indoor environments for pathogen control.
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Affiliation(s)
- In-Yong Suh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Zheng-Yang Huo
- School of Environment and Natural Resources, Institute of Ecological Civilization, Renmin University of China, Beijing 100872, PR China
| | - Jae-Hwan Jung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Donghyeon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Dong-Min Lee
- Department of Materials Science and Engineering, Center for Human-oriented Triboelectric Energy Harvesting, Yonsei University, Seoul 03722, Republic of Korea
| | - Young-Jun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Bosung Kim
- Department of Materials Science and Engineering, Center for Human-oriented Triboelectric Energy Harvesting, Yonsei University, Seoul 03722, Republic of Korea
| | - Jinyoung Jeon
- Department of Materials Science and Engineering, Center for Human-oriented Triboelectric Energy Harvesting, Yonsei University, Seoul 03722, Republic of Korea
| | - Pin Zhao
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, PR China
| | - Jeonghune Shin
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Research and Development Center, SEMS CO., Ltd., Suwon 16229, Republic of Korea
| | - SeongMin Kim
- Department of Materials Science and Engineering, Center for Human-oriented Triboelectric Energy Harvesting, Yonsei University, Seoul 03722, Republic of Korea
| | - Sang-Woo Kim
- Department of Materials Science and Engineering, Center for Human-oriented Triboelectric Energy Harvesting, Yonsei University, Seoul 03722, Republic of Korea
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Le TK, Mai TH, Iqbal MA, Vernardou D, Dao VD, Ponnusamy VK, Rout CS, Pham PV. Advances in solar energy harvesting integrated by van der Waals graphene heterojunctions. RSC Adv 2023; 13:31273-31291. [PMID: 37901851 PMCID: PMC10603566 DOI: 10.1039/d3ra06016k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 10/06/2023] [Indexed: 10/31/2023] Open
Abstract
Graphene has garnered increasing attention for solar energy harvesting owing to its unique features. However, limitations hinder its widespread adoption in solar energy harvesting, comprising the band gapless in the molecular orbital of graphene lattice, its vulnerability to oxidation in oxidative environments, and specific toxic properties that require careful consideration during development. Beyond current challenges, researchers have explored doping graphene with ionic liquids to raise the lifespan of solar cells (SCs). Additionally, they have paid attention to optimizing graphene/Si Schottky junction or Schottky barrier SCs by enhancing the conductivity and work function of graphene, improving silicon's reflectivity, and addressing passivation issues at the surface/interface of graphene/Si, resulting in significant advancements in their power conversion efficiency. Increasing the functional area of graphene-based SCs and designing efficient grid electrodes are also crucial for enhancing carrier collection efficiency. Flaws and contaminants present at the interface between graphene and silicon pose significant challenges. Despite the progress of graphene/Si-based photovoltaic cells still needs to catch up to the efficiency achieved by commercially available Si p-n junction SCs. The low Schottky barrier height, design-related challenges associated with transfer techniques, and high lateral resistivity of graphene contribute to this performance gap. To maximize the effectiveness and robustness of graphene/Si-based photovoltaic cells, appropriate interlayers have been utilized to tune the interface and modulate graphene's functionality. This mini-review will address ongoing research and development endeavors using van der Waals graphene heterojunctions, aiming to overcome the existing limitations and unlock graphene's full potential in solar energy harvesting and smart storage systems.
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Affiliation(s)
- Top Khac Le
- Faculty of Materials Science and Technology, University of Science Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University Kaohsiung 80424 Taiwan
| | - Muhammad Aamir Iqbal
- School of Materials Science and Engineering, Zhejiang University Hangzhou 310027 China
| | - Dimitra Vernardou
- Department of Electrical and Computer Engineering, School of Engineering, Hellenic Mediterranean University Heraklion 71410 Greece
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University Hanoi 100000 Vietnam
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry and Research Center for Precision Environmental Medicine, Kaohsiung Medical University Kaohsiung 807 Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital Kaohsiung 807 Taiwan
- Department of Chemistry, National Sun Yat-sen University Kaohsiung 80424 Taiwan
| | - Chandra Sekhar Rout
- Centre for Nano and Material Sciences, Jain University Bangalore 562112 India
| | - Phuong V Pham
- Department of Physics, National Sun Yat-sen University Kaohsiung 80424 Taiwan
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Della Pelle F, Bukhari QUA, Alvarez Diduk R, Scroccarello A, Compagnone D, Merkoçi A. Freestanding laser-induced two dimensional heterostructures for self-contained paper-based sensors. NANOSCALE 2023; 15:7164-7175. [PMID: 37009987 DOI: 10.1039/d2nr07157f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The production of 2D/2D heterostructures (HTs) with favorable electrochemical features is challenging, particularly for semiconductor transition metal dichalcogenides (TMDs). In this studies, we introduce a CO2 laser plotter-based technology for the realization of HT films comprising reduced graphene oxide (rGO) and 2D-TMDs (MoS2, WS2, MoSe2, and WSe2) produced via water phase exfoliation. The strategy relies on the Laser-Induced production of HeterosTructures (LIHTs), where after irradiation the nanomaterials exhibit changes in the morphological and chemical structure, becoming conductive easily transferable nanostructured films. The LIHTs were characterized in detail by SEM, XPS, Raman and electrochemical analysis. The laser treatment induces the conversion of GO into conductive highly exfoliated rGO decorated with homogeneously distributed small TMD/TM-oxide nanoflakes. The freestanding LIHT films obtained were employed to build self-contained sensors onto nitrocellulose, where the HT works both as a transducer and sensing surface. The proposed nitrocellulose-sensor manufacturing process is semi-automated and reproducible, multiple HT films may be produced in the same laser treatment and the stencil-printing allows customizable design. Excellent performance in the electroanalytical detection of different molecules such as dopamine (a neurotransmitter), catechin (a flavonol), and hydrogen peroxide was demonstrated, obtaining nanomolar limits of detection and satisfactory recovery rates in biological and agrifood samples, together with high fouling resistance. Considering the robust and rapid laser-induced production of HTs and the versatility of scribing desired patterns, the proposed approach appears as a disruptive technology for the development of electrochemical devices through sustainable and accessible strategies.
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Affiliation(s)
- Flavio Della Pelle
- Department of Bioscience and Technology for Food, Agriculture and Environment, University of Teramo, Campus "Aurelio Saliceti", Via R. Balzarini 1, 64100, Teramo, Italy.
- Nanobioelectronics & Biosensors Group, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Spain.
| | - Qurat Ul Ain Bukhari
- Department of Bioscience and Technology for Food, Agriculture and Environment, University of Teramo, Campus "Aurelio Saliceti", Via R. Balzarini 1, 64100, Teramo, Italy.
- Nanobioelectronics & Biosensors Group, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Spain.
| | - Ruslán Alvarez Diduk
- Nanobioelectronics & Biosensors Group, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Spain.
| | - Annalisa Scroccarello
- Department of Bioscience and Technology for Food, Agriculture and Environment, University of Teramo, Campus "Aurelio Saliceti", Via R. Balzarini 1, 64100, Teramo, Italy.
| | - Dario Compagnone
- Department of Bioscience and Technology for Food, Agriculture and Environment, University of Teramo, Campus "Aurelio Saliceti", Via R. Balzarini 1, 64100, Teramo, Italy.
| | - Arben Merkoçi
- Nanobioelectronics & Biosensors Group, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Spain.
- ICREA Institució Catalana de Recerca i Estudis Avançats, Barcelona, Spain
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Wang C, Song Y, Cong W, Yan Y, Wang M, Zhou J. From surface loading to precise confinement of polyoxometalates for electrochemical energy storage. CHINESE CHEM LETT 2023. [DOI: 10.1016/j.cclet.2023.108194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/10/2023]
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10
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Liu X, Wu L, Yu X, Peng H, Xu S, Zhou Z. In-Situ Growth of Graphene Films to Improve Sensing Performances. MATERIALS (BASEL, SWITZERLAND) 2022; 15:7814. [PMID: 36363409 PMCID: PMC9653576 DOI: 10.3390/ma15217814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Revised: 10/22/2022] [Accepted: 10/31/2022] [Indexed: 06/16/2023]
Abstract
Graphene films made by chemical vapor deposition (CVD) are a popular method to modify sensors by virtue of large-scale and reproducibility, but suffer from various surface contamination and structural defects induced during transfer procedures. In-situ growth of graphene films is proposed in this review article to improve sensing performance. Root causes of the surface contamination and structural defects are revealed with several common transfer methods. In-situ approaches are introduced and compared, growing graphene films with clean surfaces and few defects. This allows graphene film to display superior sensing performance for sensor applications. This work may reasonably be expected to offer a good avenue for synthesis of graphene films applicable for sensing applications.
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Carbon-Based Nanocatalysts (CnCs) for Biomass Valorization and Hazardous Organics Remediation. NANOMATERIALS 2022; 12:nano12101679. [PMID: 35630900 PMCID: PMC9147642 DOI: 10.3390/nano12101679] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Revised: 05/09/2022] [Accepted: 05/10/2022] [Indexed: 02/05/2023]
Abstract
The continuous increase of the demand in merchandise and fuels augments the need of modern approaches for the mass-production of renewable chemicals derived from abundant feedstocks, like biomass, as well as for the water and soil remediation pollution resulting from the anthropogenic discharge of organic compounds. Towards these directions and within the concept of circular (bio)economy, the development of efficient and sustainable catalytic processes is of paramount importance. Within this context, the design of novel catalysts play a key role, with carbon-based nanocatalysts (CnCs) representing one of the most promising class of materials. In this review, a wide range of CnCs utilized for biomass valorization towards valuable chemicals production, and for environmental remediation applications are summarized and discussed. Emphasis is given in particular on the catalytic production of 5-hydroxymethylfurfural (5-HMF) from cellulose or starch-rich food waste, the hydrogenolysis of lignin towards high bio-oil yields enriched predominately in alkyl and oxygenated phenolic monomers, the photocatalytic, sonocatalytic or sonophotocatalytic selective partial oxidation of 5-HMF to 2,5-diformylfuran (DFF) and the decomposition of organic pollutants in aqueous matrixes. The carbonaceous materials were utilized as stand-alone catalysts or as supports of (nano)metals are various types of activated micro/mesoporous carbons, graphene/graphite and the chemically modified counterparts like graphite oxide and reduced graphite oxide, carbon nanotubes, carbon quantum dots, graphitic carbon nitride, and fullerenes.
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12
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Photodetection Tuning with High Absorptivity Using Stacked 2D Heterostructure Films. NANOMATERIALS 2022; 12:nano12040712. [PMID: 35215040 PMCID: PMC8876593 DOI: 10.3390/nano12040712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Revised: 02/04/2022] [Accepted: 02/18/2022] [Indexed: 11/17/2022]
Abstract
Graphene-based photodetection (PD) devices have been broadly studied for their broadband absorption, high carrier mobility, and mechanical flexibility. Owing to graphene's low optical absorption, the research on graphene-based PD devices so far has relied on hybrid heterostructure devices to enhance photo-absorption. Designing a new generation of PD devices supported by silicon (Si) film is considered as an innovative technique for PD devices; Si film-based devices are typically utilized in optical communication and image sensing owing to the remarkable features of Si, e.g., high absorption, high carrier mobility, outstanding CMOS integration. Here, we integrate (i) Si film via a splitting/printing transfer with (ii) graphite film grown by a pyrolysis method. Consequently, p-type Si film/graphite film/n-type Si-stacked PD devices exhibited a broadband detection of 0.4-4 μm (in computation) and obtained good experimental results such as the responsivity of 100 mA/W, specific detectivity of 3.44 × 106 Jones, noise-equivalent power of 14.53 × 10-10 W/(Hz)1/2, external quantum efficiency of 0.2, and rise/fall time of 38 μs/1 μs under 532 nm laser illumination. Additionally, our computational results also confirmed an enhanced light absorption of the above stacked 2D heterostructure film-based PD device compatible with the experimental results.
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13
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 105] [Impact Index Per Article: 52.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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14
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Yu R, Xiang J, Du K, Deng B, Chen D, Yin H, Liu Z, Wang D. Electrochemical Growth of High-Strength Carbon Nanocoils in Molten Carbonates. NANO LETTERS 2022; 22:97-104. [PMID: 34958590 DOI: 10.1021/acs.nanolett.1c03284] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The reported mechanical strength of carbon nanocoils (CNCs) obtained from traditional preparation of catalytic acetylene pyrolysis is far below its theoretical value. Herein, we report a molten salt electrolysis method that employs CO32- as feedstock to grow CNCs without using metal catalyst. We meticulously mediate the alkalinity of molten carbonate to tune the electrochemical reduction of CO32- on graphite electrode to selectively grow CNCs in Li2CO3-Na2CO3-K2CO3-0.001 wt %Li2O. Graphite substrate, current density, and alkalinity of molten salt dictate the growth of CNCs. In addition, the electrolytic CNCs shows a spring constant of 1.92-39.41 N/m and a shear modulus of 21-547 GPa, which are 10-200 times that of CNCs obtained from catalyst-assisted gas-to-solid conversions. Overall, this paper opens up an electrochemical way to prepare CNCs through liquid-to-solid conversion without using catalysts and acetylene, providing new perspectives on green synthesis of 1D carbon nanomaterials with high mechanical strength.
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Affiliation(s)
- Rui Yu
- School of Resource and Environmental Science, Hubei International Scientific and Technological Cooperation Base of Sustainable Resources and Energy, Wuhan University, Wuhan 430072, China
| | - Junxiang Xiang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
| | - Kaifa Du
- School of Resource and Environmental Science, Hubei International Scientific and Technological Cooperation Base of Sustainable Resources and Energy, Wuhan University, Wuhan 430072, China
| | - Bowen Deng
- School of Resource and Environmental Science, Hubei International Scientific and Technological Cooperation Base of Sustainable Resources and Energy, Wuhan University, Wuhan 430072, China
| | - Di Chen
- School of Resource and Environmental Science, Hubei International Scientific and Technological Cooperation Base of Sustainable Resources and Energy, Wuhan University, Wuhan 430072, China
| | - Huayi Yin
- School of Resource and Environmental Science, Hubei International Scientific and Technological Cooperation Base of Sustainable Resources and Energy, Wuhan University, Wuhan 430072, China
| | - Ze Liu
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
| | - Dihua Wang
- School of Resource and Environmental Science, Hubei International Scientific and Technological Cooperation Base of Sustainable Resources and Energy, Wuhan University, Wuhan 430072, China
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15
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Tajik S, Beitollahi H, Dourandish Z, Mohammadzadeh Jahania P, Sheikhshoaie I, Askari MB, Salarizadeh P, Garkani Nejad F, Kim D, Kim SY, Varma RS, Shokouhimehr M. Non‐precious transition metal oxide nanomaterials: Synthesis, characterization, and electrochemical applications. ELECTROANAL 2021. [DOI: 10.1002/elan.202100393] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
| | - Hadi Beitollahi
- Research Institute of Environmental Sciences, International Center for Sciences, High Technology and Environmental Sciences IRAN, ISLAMIC REPUBLIC OF
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16
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Min-Dianey KAA, Le TK, Qadir A, M’Bouana NLP, Malik M, Kim SW, Choi JR, Pham PV. The Ripple Effect of Graphite Nanofilm on Stretchable Polydimethylsiloxane for Optical Sensing. NANOMATERIALS 2021; 11:nano11112934. [PMID: 34835698 PMCID: PMC8619932 DOI: 10.3390/nano11112934] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Revised: 10/30/2021] [Accepted: 11/01/2021] [Indexed: 11/16/2022]
Abstract
Graphene-based optical sensing devices have been widely studied for their broad band absorption, high carrier mobility, and mechanical flexibility. Due to graphene’s weak light absorption, studies on graphene-based optical sensing thus far have focused on hybrid heterostructure devices to enhance photo-absorption. Such hybrid devices need a complicated integration process and lead to deteriorating carrier mobility as a result of heterogeneous interfaces. Rippled or wrinkled graphene has been studied in electronic and optoelectronic devices. However, concrete demonstrations of the impact of the morphology of nanofilms (e.g., graphite and graphene) associated with light absorption in optical sensing devices have not been fully examined. This study explored the optical sensing potential of a graphite nanofilm surface with ripples induced by a stretchable polydimethylsiloxane (PDMS) supporting layer under different stretch:release ratios and then transferred onto silicon, both under experimental conditions and via simulation. The optical sensing potential of the rippled graphite nanofilm was significantly enhanced (260 mA/W at the stretch–release state of 30%), as compared to the pristine graphite/PDMS (20 mA/W at the stretch–release state of 0%) under laser illumination at a wavelength of 532 nm. In addition, the results of our simulated computation also confirmed the improved light absorption of rippled graphite nanofilm surface-based optical sensing devices, which was comparable with the results found in the experiment.
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Affiliation(s)
- Kossi A. A. Min-Dianey
- Département de Physique, Faculté Des Sciences (FDS), Université de Lomé, Lomé 01BP1515, Togo;
| | - Top Khac Le
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Korea;
| | - Akeel Qadir
- Research Center of Smart Sensing Chips, Ningbo Institute of Northwestern Polytechnical University, Ningbo 315103, China;
- Key Laboratory of Micro/Nano Systems for Aerospace (Ministry of Education), and Shaanxi Province Key Laboratory of Micro and Nano Electro-Mechanical Systems, Department of Microsystems Engineering, Northwestern Polytechnical University, Xi’an 710072, China
| | | | - Muhammad Malik
- Department of Electrical Engineering and Technology, Government College University, Faisalabad 38000, Pakistan;
| | - Sok Won Kim
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Korea;
- Correspondence: (S.W.K.); (J.R.C.); (P.V.P.)
| | - Jeong Ryeol Choi
- Department of Nanoengineering, Kyonggi University, Suwon 16227, Korea
- Correspondence: (S.W.K.); (J.R.C.); (P.V.P.)
| | - Phuong V. Pham
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon 440746, Korea
- Correspondence: (S.W.K.); (J.R.C.); (P.V.P.)
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17
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Qadir A, Le TK, Malik M, Amedome Min-Dianey KA, Saeed I, Yu Y, Choi JR, Pham PV. Representative 2D-material-based nanocomposites and their emerging applications: a review. RSC Adv 2021; 11:23860-23880. [PMID: 35479005 PMCID: PMC9036868 DOI: 10.1039/d1ra03425a] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2021] [Accepted: 06/24/2021] [Indexed: 12/16/2022] Open
Abstract
Composites (or complex materials) are formed from two or many constituent materials with novel physical or chemical characteristics when integrated. The individual components can be combined to create a unique composite material through mechanical transfer, physical stacking, exfoliation, derivative chemical mixtures, mixtures of solid solutions, or complex synthesis processes. The development of new composites based on emerging 2D nanomaterials has allowed for outstanding achievements with novel applications that were previously unknown. These new composite materials show massive potential in emerging applications due to their exceptional properties, such as being strong, light, cheap, and highly photodegradable, and their ability to be used for water splitting and energy storage compared to traditional materials. The blend of existing polymers and 2D materials with their nanocomposites has proven to be immediate solutions to energy and food scarcity in the world. Although much literature has been reported in the said context, we tried to provide an understanding about the relationship of their mechanisms and scope for future application in a comprehensive way. In this review, we briefly summarize the basic characteristics, novel physical and chemical behaviors, and new applications in the industry of the emerging 2D-material-based composites. Composites (or complex materials) are formed from two or many constituent materials with novel physical or chemical characteristics when integrated.![]()
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Affiliation(s)
- Akeel Qadir
- Research Center of Smart Sensing Chips, Ningbo Institute of Northwestern Polytechnical University Ningbo 315103 China.,Key Laboratory of Micro/Nano Systems for Aerospace (Ministry of Education), Shaanxi Province Key Laboratory of Micro and Nano Electro-Mechanical Systems, Department of Microsystems Engineering, Northwestern Polytechnical University Xi'an 710072 China
| | - Top Khac Le
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan Ulsan 44610 South Korea
| | - Muhammad Malik
- Department of Electrical Engineering and Technology, Government College University Faisalabad 38000 Pakistan
| | | | - Imran Saeed
- Institute of Aviation Studies, University of Management and Technology Lahore 54000 Pakistan
| | - Yiting Yu
- Research Center of Smart Sensing Chips, Ningbo Institute of Northwestern Polytechnical University Ningbo 315103 China.,Key Laboratory of Micro/Nano Systems for Aerospace (Ministry of Education), Shaanxi Province Key Laboratory of Micro and Nano Electro-Mechanical Systems, Department of Microsystems Engineering, Northwestern Polytechnical University Xi'an 710072 China
| | - Jeong Ryeol Choi
- Department of Nanoengineering, Kyonggi University Suwon 16227 South Korea
| | - Phuong V Pham
- ZJU-Hangzhou Global Scientific and Technological Innovation Center (HIC), School of Micro-Nano Electronics, Zhejiang University Hangzhou 310027 China
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18
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Advanced Optical Detection through the Use of a Deformably Transferred Nanofilm. NANOMATERIALS 2021; 11:nano11030816. [PMID: 33806799 PMCID: PMC8004814 DOI: 10.3390/nano11030816] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2021] [Revised: 03/17/2021] [Accepted: 03/22/2021] [Indexed: 11/17/2022]
Abstract
Graphene has been extensively investigated in advanced photodetection devices for its broadband absorption, high carrier mobility, and mechanical flexibility. Due to graphene’s low optical absorptivity (2.3%), graphene-based photodetection research so far has focused on hybrid systems to increase photoabsorption. However, such hybrid systems require a complicated integration process and lead to reduced carrier mobility due to heterogeneous interfaces. Crumpled or deformed graphene has previously been reported in electronics and optoelectronics. However, a depth study on the influence of the morphology of nanofilms (e.g., graphite or graphene) related to light absorption in photodetection devices has not been demonstrated yet. Here, we present an interesting study in terms of the effect of the deformable surface and the smooth surface of a nanofilm transferred onto Si through two transfer strategies using isopropanol injection and nitrogen blowing (to form a deformable nanofilm surface) and deionized water injection and van der Waals interaction (to form a smooth nanofilm surface). As a result, optical detection in the case of the deformable nanofilm surface was enhanced significantly (~100%) compared with that of the smooth nanofilm surface in the visible laser wavelength (532 nm). In addition, evidence from the computational simulation also firmly affirms an advancement in the optical detection of deformed nanofilm-surface-based photodetection devices compatible with the experimental results.
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19
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Bao J, Qiu X, Yang H, Lu W, Yang M, Gu W, Wu L, Huo D, Luo Y, Hou C. Disposable 3D GNAs/AuNPs DNA-Circuit Strip for miRNAs Dynamic Quantification. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2001416. [PMID: 32865862 DOI: 10.1002/smll.202001416] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Revised: 06/02/2020] [Indexed: 06/11/2023]
Abstract
Real-time quantitative monitoring of miRNAs plays an essential role in diagnosis and therapeutics. Herein, a DSN-coupled graphene nanoarray/gold nanoparticles (GNAs/AuNPs) carbon paper (CP) electrode for the dynamic, sensitive, and real-time analysis of miRNAs is reported. GNAs are vertically grown on the conductive CP by radio frequency plasma enhanced chemical vapor deposition, and AuNPs are electrodeposited on CP/GNAs to build a 3D ultrasensitive sensing interface with large specific surface area, good conductivity and biocompatibility. The dynamic quantitative monitoring of microRNA-21 (miR-21) is realized by cyclic voltammetry with a series of different concentrations within 16 min, and this 3D GNAs/AuNPs DNA-circuit strip shows good performance for the simultaneous detection of miR-21 and miR-155, and the detection limits are as low as 21.4 and 30.3 am, respectively. Moreover, comparable detection results are achieved for clinical samples between the proposed sensor and qRT-PCR, suggesting the reliability of the constructed sensor. This ultrasensitive sensing and disposable DNA-circuit strip with 3D structure can efficiently shorten the diffusion distance between reactive biomolecules and the sensing interface, enhance the hybridization of probes and improve the sensitivity of the biosensor, holding great promise for the rapid, quantitative and dynamic monitoring of multiple low concentrations of biomolecules in point-of-care clinical analysis.
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Affiliation(s)
- Jing Bao
- Key Laboratory for Biorheological Science and Technology of Ministry of Education, State and Local Joint Engineering Laboratory for Vascular Implants, Bioengineering College of Chongqing University, Chongqing, 400044, China
| | - Xiaopei Qiu
- Department of Clinical Laboratory, Southwest Hospital, Third Military Medical University (Army Medical University), Chongqing, 400038, China
| | - Huisi Yang
- Key Laboratory for Biorheological Science and Technology of Ministry of Education, State and Local Joint Engineering Laboratory for Vascular Implants, Bioengineering College of Chongqing University, Chongqing, 400044, China
| | - Wenqiang Lu
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Mei Yang
- Key Laboratory for Biorheological Science and Technology of Ministry of Education, State and Local Joint Engineering Laboratory for Vascular Implants, Bioengineering College of Chongqing University, Chongqing, 400044, China
| | - Wei Gu
- Key Laboratory for Biorheological Science and Technology of Ministry of Education, State and Local Joint Engineering Laboratory for Vascular Implants, Bioengineering College of Chongqing University, Chongqing, 400044, China
- Center of Smart Laboratory and Molecular Medicine, Medical School of Chongqing University, Chongqing, 400044, China
| | - Lixiang Wu
- Department of Clinical Laboratory Chongqing University Cancer Hospital and Chongqing Cancer Institute and Chongqing Cancer Hospital, No. 181 Han Yu Road, Chongqing, 400030, China
| | - Danqun Huo
- Key Laboratory for Biorheological Science and Technology of Ministry of Education, State and Local Joint Engineering Laboratory for Vascular Implants, Bioengineering College of Chongqing University, Chongqing, 400044, China
| | - Yang Luo
- Center of Smart Laboratory and Molecular Medicine, Medical School of Chongqing University, Chongqing, 400044, China
- Nuclear Medicine and Molecular Imaging Key Laboratory of Sichuan Province, Department of Nuclear Medicine, The Affiliated Hospital, Southwest Medical University, Luzhou, Sichuan, 646000, China
| | - Changjun Hou
- Key Laboratory for Biorheological Science and Technology of Ministry of Education, State and Local Joint Engineering Laboratory for Vascular Implants, Bioengineering College of Chongqing University, Chongqing, 400044, China
- Chongqing Key Laboratory of Bio-perception and Intelligent Information Processing, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, 400044, China
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20
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Krsihna BV, Ravi S, Prakash MD. Recent developments in graphene based field effect transistors. MATERIALS TODAY. PROCEEDINGS 2020; 45:S2214-7853(20)35804-1. [PMID: 32983908 PMCID: PMC7505095 DOI: 10.1016/j.matpr.2020.07.678] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/18/2020] [Revised: 07/27/2020] [Accepted: 07/29/2020] [Indexed: 12/25/2022]
Abstract
This paper presents a comprehensive survey on the recent developments in Graphene Field Effect Transistor (G-FET), considering various aspects such as fabrication, modelling and simulation tools and applications especially in sensors, highlighting the future directions. Complying with the Moore's law, to increase the transistor density of an Integrated Circuit, new alternate materials for fabrication have been tried, instead of silicon due to its limitations in reducing transistor dimensions. Graphene, one such material, proves to be a suitable alternate for silicon due to the factors like superior carrier mobility and very high trans-conductance gain, etc and G-FET is becoming the most suitable choice for high-speed analog VLSI, RF, and bio- sensor circuits.
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Affiliation(s)
- B Vamsi Krsihna
- Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Guntur 522502, Andhra Pradesh, India
| | - S Ravi
- Department of Electronics and Communication Engineering, Gudlavalleru Engineering College, Gudlavalleru 521356, Andhra Pradesh, India
| | - M Durga Prakash
- Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Guntur 522502, Andhra Pradesh, India
- Department of Electronics and Communication Engineering, Velagapudi Ramakrishna Siddhartha Engineering College, Vijayawada 520 007, Andhra Pradesh, India
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21
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Deokar G, Genovese A, Surya SG, Long C, Salama KN, Costa PMFJ. Semi-transparent graphite films growth on Ni and their double-sided polymer-free transfer. Sci Rep 2020; 10:14703. [PMID: 32895394 PMCID: PMC7477098 DOI: 10.1038/s41598-020-71435-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/11/2020] [Indexed: 11/21/2022] Open
Abstract
Nanorange thickness graphite films (NGFs) are robust nanomaterials that can be produced via catalytic chemical vapour deposition but questions remain regarding their facile transfer and how surface topography may affect their application in next-generation devices. Here, we report the growth of NGFs (with an area of 55 cm2 and thickness of ~ 100 nm) on both sides of a polycrystalline Ni foil and their polymer-free transfer (front- and back-side, in areas up to 6 cm2). Due to the catalyst foil topography, the two carbon films differed in physical properties and other characteristics such as surface roughness. We demonstrate that the coarser back-side NGF is well-suited for NO2 sensing, whereas the smoother and more electrically conductive front-side NGF (2000 S/cm, sheet resistance − 50 Ω/sq) could be a viable conducting channel or counter electrode in solar cells (as it transmits 62% of visible light). Overall, the growth and transfer processes described could help realizing NGFs as an alternative carbon material for those technological applications where graphene and micrometer-thick graphite films are not an option.
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Affiliation(s)
- Geetanjali Deokar
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Alessandro Genovese
- Core Labs, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sandeep G Surya
- Sensors lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Long
- Core Labs, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Khaled N Salama
- Sensors lab, Advanced Membranes and Porous Materials Center, Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Pedro M F J Costa
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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22
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Qing F, Zhang Y, Niu Y, Stehle R, Chen Y, Li X. Towards large-scale graphene transfer. NANOSCALE 2020; 12:10890-10911. [PMID: 32400813 DOI: 10.1039/d0nr01198c] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The transfer process is crucial for obtaining high-quality graphene for its large-scale industrial application. In this review, graphene transfer methods are systematically classified along with an analysis of the contamination or impurity of graphene that is introduced during the transfer process. Two key processes are emphasized, the substrate removal process and the direct/indirect transfer of graphene. Based on the efficiency and cost factors of industrial scale production, various transfer methods are summarized and evaluated. Potential transfer technologies and future research directions for industrial application are prospected.
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Affiliation(s)
- Fangzhu Qing
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China. and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Yufeng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Yuting Niu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Richard Stehle
- Mechanical Engineering Department, Sichuan University - Pittsburgh Institute, Sichuan University, Jiang'an Campus, Chengdu 610207, P. R. China.
| | - Yuanfu Chen
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China. and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Xuesong Li
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China. and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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23
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Ambrosio G, Brown A, Daukiya L, Drera G, Di Santo G, Petaccia L, De Feyter S, Sangaletti L, Pagliara S. Impact of covalent functionalization by diazonium chemistry on the electronic properties of graphene on SiC. NANOSCALE 2020; 12:9032-9037. [PMID: 32270844 DOI: 10.1039/d0nr01186j] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Plenty of strategies focused on covalent interaction have been developed to functionalize graphene's surface in order to employ it in a wide range of applications. Among them, the use of radical species including nitrene, carbene and aryl diazonium salts is regarded as a promising strategy to establish the covalent functionalization of graphene. In this work, we highlight the effect of diazonium chemistry on the electronic properties of graphene on SiC. On the basis of X-ray and synchrotron-based photoemission experiments, we were able to prove that 3,4,5-trimethoxybenzenediazonium (TMeOD) units, reduced and chemisorbed onto graphene using electrochemistry, preserve the electronic structure of the Dirac cone, through inducing a slightly additional n-type doping of graphene, as revealed by a downshift of the Dirac cone probed by angle-resolved photoemission experiments.
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Affiliation(s)
- G Ambrosio
- I-LAMP and Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia, Italy.
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Zhai Z, Shen H, Chen J, Li X, Li Y. Metal-Free Synthesis of Boron-Doped Graphene Glass by Hot-Filament Chemical Vapor Deposition for Wave Energy Harvesting. ACS APPLIED MATERIALS & INTERFACES 2020; 12:2805-2815. [PMID: 31867953 DOI: 10.1021/acsami.9b17546] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Property modulation of graphene glass by heteroatom doping such as boron (B) and nitrogen (N) is important to extend its practical applications. However, unlike N doping, research studies about the metal-free synthesis of B-doped graphene on glass through the chemical vapor deposition (CVD) method are rarely reported. Herein, we report a hot-filament CVD approach to prepare B-doped graphene glass using diborane (B2H6) as the B dopant. The synthesized B-doped graphene was uniform on a large-scale and composed of nanocrystalline graphene grains. By raising the B2H6 flow from 0 to 15 sccm, the B content of graphene was facilely modulated from 0 to 5.3 at. %, accompanied with the improvement of both transparency and conductivity. The B-doped graphene prepared on glass at 15 sccm B2H6 flow presented the optimal transparent conductive performance superior to those of most reported graphene glass fabricated by other state-of-the-art approaches. Furthermore, for the first time, the performance of graphene glass for wave energy harvesting has been elaborated. It was found that the output power produced by inserting graphene glass into 0.6 M sodium chloride (NaCl) solution could be improved by more than 6 times through B doping. The significant enhancement resulted from the higher waving voltage and smaller resistance of B-doped graphene on glass than the pristine ones. In addition, the waving voltage inversed the polarity after B doping, which was due to the opposite variation of surface potential of pristine and B-doped graphene after NaCl immersion. This work would pave ways for the metal-free preparation and expand the energy-harvesting applications of B-doped graphene materials.
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Affiliation(s)
- Zihao Zhai
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion , Nanjing University of Aeronautics & Astronautics , 29 Yudao Street , Nanjing 210016 , PR China
| | - Honglie Shen
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion , Nanjing University of Aeronautics & Astronautics , 29 Yudao Street , Nanjing 210016 , PR China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering , Changzhou University , Changzhou 213164 , PR China
| | - Jieyi Chen
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion , Nanjing University of Aeronautics & Astronautics , 29 Yudao Street , Nanjing 210016 , PR China
| | - Xuemei Li
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion , Nanjing University of Aeronautics & Astronautics , 29 Yudao Street , Nanjing 210016 , PR China
| | - Yufang Li
- College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion , Nanjing University of Aeronautics & Astronautics , 29 Yudao Street , Nanjing 210016 , PR China
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25
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Elnobi S, Sharma S, Araby MI, Paudel B, Kalita G, Mohd Yusop MZ, Ayhan ME, Tanemura M. Room-temperature graphitization in a solid-phase reaction. RSC Adv 2020; 10:914-922. [PMID: 35494459 PMCID: PMC9048107 DOI: 10.1039/c9ra09038j] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2019] [Accepted: 12/10/2019] [Indexed: 11/21/2022] Open
Abstract
Graphitized carbon including graphene has recently become one of the most investigated advanced materials for future device applications, but a prerequisite for broadening its range of applications is to lower its growth temperature. Here we report a great decrease in graphitization temperature using the well-known catalyst Ni. Amorphous carbon films with Ni nanoparticles (NPs) were deposited, using a simple one-step magnetron sputtering method, onto microgrids and a SiO2/Si substrate for transmission electron microscopy (TEM) and Raman spectroscopy analyses, respectively. The amorphous carbon surroundings and locations between the Ni NPs started to become graphitized during the film deposition even at room temperature (RT) and 50 °C. The graphitization was confirmed by both high-resolution TEM (HR-TEM) and Raman 2D peak analyses. The increase in the relative amount of Ni in the amorphous carbon film led to the partial oxidation of the larger Ni NPs, resulting in less graphitization even at an elevated deposition temperature. Based on the detailed HR-TEM analyses, a decreased oxidation of NPs and enhanced solubility of carbon into Ni NPs were believed to be key for achieving low-temperature graphitization. The spontaneous graphitization for C films containing Ni NPs was attributed mainly to the increased solubility for metallic Ni NPs, and was enhanced at the deposition temperature of 50 °C.![]()
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Affiliation(s)
- Sahar Elnobi
- Department of Physical Science and Engineering, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya 466-8555 Japan +81-52-735-5379 +81-52-735-5379.,Department of Physics, Faculty of Science, South Valley University Qena 83523 Egypt
| | - Subash Sharma
- Department of Physical Science and Engineering, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya 466-8555 Japan +81-52-735-5379 +81-52-735-5379
| | - Mona Ibrahim Araby
- Department of Physical Science and Engineering, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya 466-8555 Japan +81-52-735-5379 +81-52-735-5379
| | - Balaram Paudel
- Department of Physical Science and Engineering, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya 466-8555 Japan +81-52-735-5379 +81-52-735-5379
| | - Golap Kalita
- Department of Physical Science and Engineering, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya 466-8555 Japan +81-52-735-5379 +81-52-735-5379
| | - Mohd Zamri Mohd Yusop
- Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia 81310 Skudai Johor Malaysia
| | - Muhammed Emre Ayhan
- Department of Metallurgical and Materials Engineering, Faculty of Engineering and Architecture, Necmettin Erbakan University Konya Turkey
| | - Masaki Tanemura
- Department of Physical Science and Engineering, Graduate School of Engineering, Nagoya Institute of Technology Gokiso-cho, Showa-ku Nagoya 466-8555 Japan +81-52-735-5379 +81-52-735-5379
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26
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Methane-Mediated Vapor Transport Growth of Monolayer WSe 2 Crystals. NANOMATERIALS 2019; 9:nano9111642. [PMID: 31752358 PMCID: PMC6915445 DOI: 10.3390/nano9111642] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2019] [Revised: 11/08/2019] [Accepted: 11/13/2019] [Indexed: 11/18/2022]
Abstract
The electrical and optical properties of semiconducting transition metal dichalcogenides (TMDs) can be tuned by controlling their composition and the number of layers they have. Among various TMDs, the monolayer WSe2 has a direct bandgap of 1.65 eV and exhibits p-type or bipolar behavior, depending on the type of contact metal. Despite these promising properties, a lack of efficient large-area production methods for high-quality, uniform WSe2 hinders its practical device applications. Various methods have been investigated for the synthesis of large-area monolayer WSe2, but the difficulty of precisely controlling solid-state TMD precursors (WO3, MoO3, Se, and S powders) is a major obstacle to the synthesis of uniform TMD layers. In this work, we outline our success in growing large-area, high-quality, monolayered WSe2 by utilizing methane (CH4) gas with precisely controlled pressure as a promoter. When compared to the catalytic growth of monolayered WSe2 without a gas-phase promoter, the catalytic growth of the monolayered WSe2 with a CH4 promoter reduced the nucleation density to 1/1000 and increased the grain size of monolayer WSe2 up to 100 μm. The significant improvement in the optical properties of the resulting WSe2 indicates that CH4 is a suitable candidate as a promoter for the synthesis of TMD materials, because it allows accurate gas control.
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27
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Bolotsky A, Butler D, Dong C, Gerace K, Glavin NR, Muratore C, Robinson JA, Ebrahimi A. Two-Dimensional Materials in Biosensing and Healthcare: From In Vitro Diagnostics to Optogenetics and Beyond. ACS NANO 2019; 13:9781-9810. [PMID: 31430131 DOI: 10.1021/acsnano.9b03632] [Citation(s) in RCA: 148] [Impact Index Per Article: 29.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Since the isolation of graphene in 2004, there has been an exponentially growing number of reports on layered two-dimensional (2D) materials for applications ranging from protective coatings to biochemical sensing. Due to the exceptional, and often tunable, electrical, optical, electrochemical, and physical properties of these materials, they can serve as the active sensing element or a supporting substrate for diverse healthcare applications. In this review, we provide a survey of the recent reports on the applications of 2D materials in biosensing and other emerging healthcare areas, ranging from wearable technologies to optogenetics to neural interfacing. Specifically, this review provides (i) a holistic evaluation of relevant material properties across a wide range of 2D systems, (ii) a comparison of 2D material-based biosensors to the state-of-the-art, (iii) relevant material synthesis approaches specifically reported for healthcare applications, and (iv) the technological considerations to facilitate mass production and commercialization.
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Affiliation(s)
| | | | - Chengye Dong
- State Key Lab of Electrical Insulation and Power Equipment , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , People's Republic of China
| | | | - Nicholas R Glavin
- Materials and Manufacturing Directorate , Air Force Research Laboratory , WPAFB , Ohio 45433 , United States
| | - Christopher Muratore
- Department of Chemical and Materials Engineering , University of Dayton , Dayton , Ohio 45469 , United States
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28
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Wei N, Yu L, Sun Z, Song Y, Wang M, Tian Z, Xia Y, Cai J, Li YY, Zhao L, Li Q, Rümmeli MH, Sun J, Liu Z. Scalable Salt-Templated Synthesis of Nitrogen-Doped Graphene Nanosheets toward Printable Energy Storage. ACS NANO 2019; 13:7517-7526. [PMID: 31150583 DOI: 10.1021/acsnano.9b03157] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Mass production of graphene powders affording high quality and environmental benignancy serves as a prerequisite for the practical usage of graphene in multiple energy storage applications. Herein, we exploit a salt-templated CVD approach to harness the direct synthesis of nitrogen-doped graphene (NG) nanosheets and related ink dispersions in a scalable, safe, efficient, and green fashion. Thus-fabricated NG accompanying large productivity, excellent electrical conductivity, and favorable solution processability possesses implications in printable energy storage devices. With the NG-based ink in hand, self-standing 3D architectures with programmable patterns can be directly printed over a myriad of substrates. Accordingly, both electrode preparation for flexible supercapacitors and separator modification in Li-S batteries can be enabled via printing by employing our NG-based composite inks. This work thus represents a practical route for mass production of graphene inks with cost-effectiveness and eco-friendliness for emerging energy storage technology.
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Affiliation(s)
- Nan Wei
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
- Beijing Graphene Institute (BGI) , Beijing 100095 , P.R. China
| | - Lianghao Yu
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Zhongti Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Yingze Song
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Menglei Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Zhengnan Tian
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Yu Xia
- Shenzhen Key Laboratory of Special Functional Materials & Shenzhen Engineering Laboratory for Advance Technology of Ceramics, College of Materials Science and Engineering , Shenzhen University , Shenzhen 518060 , P.R. China
| | - Jingsheng Cai
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Ya-Yun Li
- Shenzhen Key Laboratory of Special Functional Materials & Shenzhen Engineering Laboratory for Advance Technology of Ceramics, College of Materials Science and Engineering , Shenzhen University , Shenzhen 518060 , P.R. China
| | - Liang Zhao
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Qiucheng Li
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Mark H Rümmeli
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
- Beijing Graphene Institute (BGI) , Beijing 100095 , P.R. China
| | - Zhongfan Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P.R. China
- Beijing Graphene Institute (BGI) , Beijing 100095 , P.R. China
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P.R. China
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29
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Zhou L, Wei S, Ge C, Zhao C, Guo B, Zhang J, Zhao J. Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates. NANOMATERIALS 2019; 9:nano9070964. [PMID: 31266221 PMCID: PMC6669584 DOI: 10.3390/nano9070964] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Revised: 06/26/2019] [Accepted: 06/28/2019] [Indexed: 01/29/2023]
Abstract
To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source. A 1 × 1 cm2 SiO2/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm2/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.
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Affiliation(s)
- Lijie Zhou
- School of Mechanical and Power Engineering, Harbin University of Science and Technology, No. 52, Xuefu Road, Harbin 150080, China
| | - Shuai Wei
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
| | - Chuanyang Ge
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
| | - Chao Zhao
- College of Engineering, Swansea University, Fabian Way, Swansea SA1 8EN, UK
| | - Bin Guo
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
| | - Jia Zhang
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China.
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China.
| | - Jie Zhao
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
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31
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Clair S, de Oteyza DG. Controlling a Chemical Coupling Reaction on a Surface: Tools and Strategies for On-Surface Synthesis. Chem Rev 2019; 119:4717-4776. [PMID: 30875199 PMCID: PMC6477809 DOI: 10.1021/acs.chemrev.8b00601] [Citation(s) in RCA: 325] [Impact Index Per Article: 65.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2018] [Indexed: 01/06/2023]
Abstract
On-surface synthesis is appearing as an extremely promising research field aimed at creating new organic materials. A large number of chemical reactions have been successfully demonstrated to take place directly on surfaces through unusual reaction mechanisms. In some cases the reaction conditions can be properly tuned to steer the formation of the reaction products. It is thus possible to control the initiation step of the reaction and its degree of advancement (the kinetics, the reaction yield); the nature of the reaction products (selectivity control, particularly in the case of competing processes); as well as the structure, position, and orientation of the covalent compounds, or the quality of the as-formed networks in terms of order and extension. The aim of our review is thus to provide an extensive description of all tools and strategies reported to date and to put them into perspective. We specifically define the different approaches available and group them into a few general categories. In the last part, we demonstrate the effective maturation of the on-surface synthesis field by reporting systems that are getting closer to application-relevant levels thanks to the use of advanced control strategies.
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Affiliation(s)
- Sylvain Clair
- Aix
Marseille Univ., Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Dimas G. de Oteyza
- Donostia
International Physics Center, San
Sebastián 20018, Spain
- Centro
de Física de Materiales CSIC-UPV/EHU-MPC, San Sebastián 20018, Spain
- Ikerbasque,
Basque Foundation for Science, Bilbao 48013, Spain
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32
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Wang Z, Shi J, Wang D, Pu Y, Wang JX, Chen JF. Metal-free catalytic oxidation of benzylic alcohols for benzaldehyde. REACT CHEM ENG 2019. [DOI: 10.1039/c8re00265g] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Metal-free catalytic oxidation of benzylic alcohols for benzaldehyde and process intensification by using a rotating packed bed reactor were demonstrated.
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Affiliation(s)
- Zhiyong Wang
- State Key Laboratory of Organic-Inorganic Composites
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Research Center of the Ministry of Education for High Gravity Engineering and Technology
| | - Jie Shi
- State Key Laboratory of Organic-Inorganic Composites
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Research Center of the Ministry of Education for High Gravity Engineering and Technology
| | - Dan Wang
- State Key Laboratory of Organic-Inorganic Composites
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Research Center of the Ministry of Education for High Gravity Engineering and Technology
| | - Yuan Pu
- State Key Laboratory of Organic-Inorganic Composites
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Research Center of the Ministry of Education for High Gravity Engineering and Technology
| | - Jie-Xin Wang
- State Key Laboratory of Organic-Inorganic Composites
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Research Center of the Ministry of Education for High Gravity Engineering and Technology
| | - Jian-Feng Chen
- State Key Laboratory of Organic-Inorganic Composites
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Research Center of the Ministry of Education for High Gravity Engineering and Technology
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Nakagawa K, Takahashi H, Shimura Y, Maki H. A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source. RSC Adv 2019; 9:37906-37910. [PMID: 35541788 PMCID: PMC9075755 DOI: 10.1039/c9ra07294b] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/11/2019] [Accepted: 11/11/2019] [Indexed: 11/21/2022] Open
Abstract
We developed a procedure for direct patterning of graphene with arbitrary position, size, and shape on silicon substrates from a solid-state carbon source without dry etching processing. Our light emitting graphene devices perform on a par with those based on high crystallinity graphene obtained via mechanical exfoliation or chemical vapor deposition. We developed a procedure for direct patterning graphene with arbitrary position, size, and shape on Si from a solid-state carbon source without dry etching. Our light emitting devices perform on a par with those based on high crystallinity graphene.![]()
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Affiliation(s)
- Kenta Nakagawa
- Department of Applied Physics and Physico-Informatics
- Keio University
- Yokohama
- Japan
- Kanagawa Institute of Industrial Science and Technology (KISTEC)
| | - Hidenori Takahashi
- Department of Applied Physics and Physico-Informatics
- Keio University
- Yokohama
- Japan
| | - Yui Shimura
- Department of Applied Physics and Physico-Informatics
- Keio University
- Yokohama
- Japan
| | - Hideyuki Maki
- Department of Applied Physics and Physico-Informatics
- Keio University
- Yokohama
- Japan
- Center for Spintronics Research Network
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Lin L, Deng B, Sun J, Peng H, Liu Z. Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene. Chem Rev 2018; 118:9281-9343. [PMID: 30207458 DOI: 10.1021/acs.chemrev.8b00325] [Citation(s) in RCA: 86] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.
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Affiliation(s)
- Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Bing Deng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China
| | - Jingyu Sun
- Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Physics, Optoelectronics and Energy , Soochow University , Suzhou 215006 , P. R. China.,Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies , Soochow University , Suzhou 215006 , P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.,Beijing Graphene Institute (BGI) , Beijing 100095 , P. R. China
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35
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Pham PV. Hexagon Flower Quantum Dot-like Cu Pattern Formation during Low-Pressure Chemical Vapor Deposited Graphene Growth on a Liquid Cu/W Substrate. ACS OMEGA 2018; 3:8036-8041. [PMID: 31458941 PMCID: PMC6644442 DOI: 10.1021/acsomega.8b00985] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/12/2018] [Accepted: 07/09/2018] [Indexed: 06/10/2023]
Abstract
The H2-induced etching of low-dimensional materials is of significant interest for controlled architecture design of crystalline materials at the micro- and nanoscale. This principle is applied to the thinnest crystalline etchant, graphene. In this study, by using a high H2 concentration, the etched hexagonal holes of copper quantum dots (Cu QDs) were formed and embedded into the large-scale graphene region by low-pressure chemical vapor deposition on a liquid Cu/W surface. With this procedure, the hexagon flower-etched Cu patterns were formed in a H2 environment at a higher melting temperature of Cu foil (1090 °C). The etching into the large-scale graphene was confirmed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman analysis. This first observation could be an intriguing case for the fundamental study of low-dimensional material etching during chemical vapor deposition growth; moreover, it may supply a simple approach for the controlled etching/growth. In addition, it could be significant in the fabrication of controllable etched structures based on Cu QD patterns for nanoelectronic devices as well as in-plane heterostructures on other low-dimensional materials in the near future.
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Zhou G, Addou R, Wang Q, Honari S, Cormier CR, Cheng L, Yue R, Smyth CM, Laturia A, Kim J, Vandenberghe WG, Kim MJ, Wallace RM, Hinkle CL. High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803109. [PMID: 30022534 DOI: 10.1002/adma.201803109] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2018] [Revised: 06/18/2018] [Indexed: 05/07/2023]
Abstract
The transfer-free direct growth of high-performance materials and devices can enable transformative new technologies. Here, room-temperature field-effect hole mobilities as high as 707 cm2 V-1 s-1 are reported, achieved using transfer-free, low-temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO2 /Si. The Te nanostructures exhibit significantly higher device performance than other low-temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high-performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO2 /Si and HfO2 . The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer-free direct growth of high-mobility Te devices can enable major technological breakthroughs, as the low-temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications.
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Affiliation(s)
- Guanyu Zhou
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Rafik Addou
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Qingxiao Wang
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Shahin Honari
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Christopher R Cormier
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Lanxia Cheng
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Ruoyu Yue
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Christopher M Smyth
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Akash Laturia
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Jiyoung Kim
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - William G Vandenberghe
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Moon J Kim
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Robert M Wallace
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Christopher L Hinkle
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
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37
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Xiao Z, Han J, Xiao J, Song Q, Zhang X, Kong D, Yang QH, Zhi L. A facile and processable integration strategy towards Schiff-base polymer-derived carbonaceous materials with high lithium storage performance. NANOSCALE 2018; 10:10351-10356. [PMID: 29796460 DOI: 10.1039/c8nr03256d] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Herein, a novel in situ concentrated-solution-induced polymerization strategy is developed towards the integration of Schiff-base networks into graphene foam with processable and moldable characteristics. This bottom-up design process endows the resultant composites with a high nitrogen content (9.6 at%) and abundant porosity and accordingly demonstrates high lithium storage properties.
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Affiliation(s)
- Zhichang Xiao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China. and University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Junwei Han
- School of Chemical Technology and Engineering, Tianjin University, Tianjin 300350, P. R. China
| | - Jing Xiao
- School of Chemical Technology and Engineering, Tianjin University, Tianjin 300350, P. R. China
| | - Qi Song
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
| | - Xinghao Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China. and University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Debin Kong
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China. and School of Chemical Technology and Engineering, Tianjin University, Tianjin 300350, P. R. China
| | - Quan-Hong Yang
- School of Chemical Technology and Engineering, Tianjin University, Tianjin 300350, P. R. China
| | - Linjie Zhi
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China. and School of Chemical Technology and Engineering, Tianjin University, Tianjin 300350, P. R. China and University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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38
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A Library of Doped-Graphene Images via Transmission Electron Microscopy. C — JOURNAL OF CARBON RESEARCH 2018. [DOI: 10.3390/c4020034] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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39
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Pham PV. Cleaning of graphene surfaces by low-pressure air plasma. ROYAL SOCIETY OPEN SCIENCE 2018; 5:172395. [PMID: 29892425 PMCID: PMC5990796 DOI: 10.1098/rsos.172395] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/03/2018] [Accepted: 04/16/2018] [Indexed: 06/08/2023]
Abstract
The polymer residues still present on a chemical vapour-deposited graphene surface after its wet transfer by the poly(methyl methacrylate) method to the arbitrary substrates, tend to cause problems such as electrical degradation and unwanted intentional doping. In this study, by using an effective cleaning method for the graphene surface by air-assisted plasma, the graphene surface was cleaned significantly without damaging the graphene network, which resulted in the reduction (approx. 71.11%) of polymer residues on its surface. The analysis reveals that this approach reduced the D-band (impurities, polymer residues) formation while maintaining the π-bonding of the graphene, which affects conductivity. By characterizations of the optical microscope, Raman spectroscopy and atomic force microscopy, we obtained a significantly cleaner graphene surface (roughness of 4.1 nm) compared to pristine graphene (roughness of 1.2 nm) on a SiO2 substrate. In addition, X-ray photoelectron spectroscopy data revealed that the C1s peak of the air-assisted graphene film was higher than the one of a pristine graphene film, indicating that a cleaner graphene surface was obtained.
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