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Xu X, Thomas S, Guo T, Luo L, Khan Y, Yuan Y, Elhagrasy YA, Lanza M, Anthopoulos TD, Bakr OM, Mohammed OF, Alshareef HN. Wafer-Scale Transfer of MXene Films with Enhanced Device Performance via 2D Liquid Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405214. [PMID: 39194391 DOI: 10.1002/adma.202405214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 07/08/2024] [Indexed: 08/29/2024]
Abstract
Wafer-scale transfer processes of 2D materials significantly expand their application space in scalable microelectronic devices with excellent and tunable properties through van der Waals (vdW) stacking. Unlike many 2D materials, wafer-scale transfer of MXene films for vdW contact engineering has not yet been reported. With their rich surface chemistry and tunable properties, the transfer of MXenes can enable enormous possibilities in electronic devices using interface engineering. Taking advantage of the MXene hydrophilic surface, a straightforward, green, and fast process for the transfer of MXene films at the wafer scale (4-inch) is developed. Uniform vdW stacking of several types of large-area heterojunctions including MXene/MXene (Ti3C2Tx, Nb2CTx, and V2CTx), MXene/MoS2, and MXene/Au is further demonstrated. Multilayer support is applied to minimize damage or deformation in the transfer process of patterned Ti3C2Tx film. It allows us to fabricate thin film transistors and manipulate the MXene/MoS2 interface through the intercalation of various 2D liquids. Particularly noteworthy is the significant enhancement of the interfacial carrier transfer efficiency by ≈2 orders of magnitude using hydrogen iodide (HI) intercalation. This finding indicates a wide range of possibilities for interface engineering by transferring MXene films and employing liquid-assisted interfacial intercalation.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Simil Thomas
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Advanced Membranes and Porous Materials Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Linqu Luo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yusuf Khan
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yue Yuan
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Youssef A Elhagrasy
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Engineering Physics, University of British Columbia, Vancouver, Canada
| | - Mario Lanza
- Department of Materials Science and Engineering, National University of Singapore, Singapore, National University of Singapore, Singapore, 117575, Singapore
| | - Thomas D Anthopoulos
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Henry Royce Institute and Photon Science Institute, Department of Electrical and Electronic Engineering, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Osman M Bakr
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Omar F Mohammed
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Advanced Membranes and Porous Materials Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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Kim B, Lee S, Park JH. Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors. NANOSCALE HORIZONS 2024; 9:1417-1431. [PMID: 38973382 DOI: 10.1039/d4nh00030g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
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Affiliation(s)
- Byeongchan Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
| | - Seojoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea
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3
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Maurtua C, Zide J, Chakraborty C. Molecular beam epitaxy and other large-scale methods for producing monolayer transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:383003. [PMID: 38901422 DOI: 10.1088/1361-648x/ad5a5d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Accepted: 06/20/2024] [Indexed: 06/22/2024]
Abstract
Transition metal dichalcogenide (TMD/TMDC) monolayers have gained considerable attention in recent years for their unique properties. Some of these properties include direct bandgap emission and strong mechanical and electronic properties. For these reasons, monolayer TMDs have been considered a promising material for next-generation quantum technologies and optoelectronic devices. However, for the field to make more gainful advancements and be implemented in devices, high-quality TMD monolayers need to be produced at a larger scale with high quality. In this article, some of the current means to produce larger-scale semiconducting monolayer TMDs will be reviewed. An emphasis will be given to the technique of molecular beam epitaxy (MBE) for two main reasons: (1) there is a growing body of research using this technique to grow TMD monolayers and (2) there is yet to be a body of work that has summarized the current research for MBE monolayer growth of TMDs.
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Affiliation(s)
- Collin Maurtua
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America
| | - Joshua Zide
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America
| | - Chitraleema Chakraborty
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America
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4
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Bassi G, Kaur D, Dahiya R, Kumar M. 2D-3D heterostructure of PtS 2-x/Ga 2O 3and their band alignment studies for high performance and broadband photodetector. NANOTECHNOLOGY 2024; 35:325706. [PMID: 38710165 DOI: 10.1088/1361-6528/ad47c9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Accepted: 05/06/2024] [Indexed: 05/08/2024]
Abstract
For deep ultraviolet (UV-C) photodetectors, gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2group-10 transitional metal dichalcogenide stands at the top owing to its narrow band gap (0.25-1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3sensing in UV and PtS2broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D-3D PtS2-x/Ga2O3heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2-x/Ga2O3device shows a high responsivity of 38.7 AW-1and detectivity of 4.8 × 1013Jones under 1100 nm light illumination at 5 V bias. A fast response of 90 ms/86 ms illustrates the device's fast speed. An interface study between the PtS2-xand Ga2O3was conducted using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D-3D heterostructures based photodetectors for future optoelectronics devices.
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Affiliation(s)
- Gaurav Bassi
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Damanpreet Kaur
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Rohit Dahiya
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
| | - Mukesh Kumar
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab-140001, India
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Bai Q, Huang X, Du S, Guo Y, Li C, Li W, Li J, Gu C. Multiple-polarization-sensitive photodetector Based on a plasmonic metasurface. NANOSCALE 2024. [PMID: 38625084 DOI: 10.1039/d4nr00808a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
On-chip polarization-sensitive photodetectors are highly desired for ultra-compact optoelectronic systems. It has been demonstrated that polarization-sensitive photodetection can be realized using intrinsic chiral and anisotropy materials. However, these photodetectors can only realize the detection of either circularly polarized light (CPL) or linear polarized light (LPL) and are not applicable to multiple-polarization-sensitive photodetection. Herein, we experimentally demonstrate a metasurface-integrated semiconductor to realize multiple-polarization-sensitive photodetection at visible wavelengths. This device is composed of a MoSe2 monolayer on an H-shaped plasmonic nanostructure. The geometric chirality and anisotropy of the H-shaped nanostructure result in CPL and LPL resolved optical responses. By integrating a plasmonic metasurface with monolayer MoSe2, we converted polarization-sensitive optical absorption to the polarization-sensitive photocurrent of the device through the photoconductive effect. Polarization-sensitive photocurrent responses to both CPL and LPL are systematically investigated, which demonstrate a high photocurrent circular dichroism (CD) of 0.35 at a wavelength of 810 nm and photocurrent linear polarization (LP) of 0.4 at a wavelength of 633 nm. Our results provide a potential pathway to realize multiple-polarization-sensitive applications in medicine analysis, biology, and remote sensing.
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Affiliation(s)
- Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xin Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Chensheng Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Wei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Junjie Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Changzhi Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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6
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Murastov G, Aslam MA, Leitner S, Tkachuk V, Plutnarová I, Pavlica E, Rodriguez RD, Sofer Z, Matković A. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:481. [PMID: 38470809 DOI: 10.3390/nano14050481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 02/28/2024] [Accepted: 03/01/2024] [Indexed: 03/14/2024]
Abstract
Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on-off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal-oxide-semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices.
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Affiliation(s)
- Gennadiy Murastov
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Muhammad Awais Aslam
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Simon Leitner
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Vadym Tkachuk
- Laboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia
| | - Iva Plutnarová
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic
| | - Egon Pavlica
- Laboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia
| | - Raul D Rodriguez
- Research School of Chemistry & Applied Biomedical Sciences, Tomsk Polytechnic University, Lenina ave. 30, 634034 Tomsk, Russia
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic
| | - Aleksandar Matković
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
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7
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Tian S, Sun D, Chen F, Wang H, Li C, Yin C. Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices. NANOSCALE 2024; 16:1577-1599. [PMID: 38173407 DOI: 10.1039/d3nr05618j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.
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Affiliation(s)
- Siying Tian
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Dapeng Sun
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Fengling Chen
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Honghao Wang
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing 100049, China
| | - Chaobo Li
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
| | - Chujun Yin
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
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8
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John JW, Mishra A, Debbarma R, Verzhbitskiy I, Goh KEJ. Probing charge traps at the 2D semiconductor/dielectric interface. NANOSCALE 2023; 15:16818-16835. [PMID: 37842965 DOI: 10.1039/d3nr03453d] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps, Dit, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify Dit at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of Dit at 2D semiconductor/dielectric interfaces.
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Affiliation(s)
- John Wellington John
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Abhishek Mishra
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Rousan Debbarma
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Ivan Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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9
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Cao M, Yang D, Wang F, Zhou B, Chen H, Yuan R, Sun K. Extracellular polymeric substances altered the physicochemical properties of molybdenum disulfide nanomaterials to mitigate its toxicity to Chlorella vulgaris. NANOIMPACT 2023; 32:100485. [PMID: 37778438 DOI: 10.1016/j.impact.2023.100485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 09/23/2023] [Accepted: 09/26/2023] [Indexed: 10/03/2023]
Abstract
Although the toxic effects of two-dimensional nanomaterials (2D-NMs) have been widely reported, the influence of extracellular polymeric substances (EPS) on the environmental fate and risk of 2D-NMs in aquatic environments is largely unknown, and the processes and mechanisms involved remain to be revealed. Herein, we investigated the impact of EPS secreted by microalgae (Chlorella vulgaris (C. vulgaris)) on the environmental transformation and risk of molybdenum disulfide (MoS2). We found that the attachment of EPS increased the thickness of MoS2 (from 2 nm to 5 nm), changed it from a monolayer sheet to a fuzzy multilayer structure, and promoted the formation of defects on MoS2. The blue-shift of the peak associated with the plasmon resonances in the 1 T phase and the generation of electron-hole pairs suggested that EPS altered the surface electronic structure of MoS2. EPS interacted mainly with the S atoms on the 1 T phase, and the attachment of EPS promoted the oxidation of MoS2. The reduction in hydrodynamic diameter (Dh) and the decrease in zeta potential indicated that EPS inhibited the agglomeration behavior of MoS2 and enhanced its dispersion and stability in aqueous media. Notably, EPS reduced the generation of free radicals (superoxide anion (•O2-), singlet oxygen (1O2), and hydroxyl radicals (•OH-)). Furthermore, EPS mitigated the toxicity of MoS2 to C. vulgaris, such as attenuated reduction in biomass and chlorophyll content. Compared to pristine MoS2, MoS2 + BG11 + EPS exhibited weaker oxidative stress, membrane damage and lipid peroxidation. The adsorption of EPS on MoS2 surface reduced the attachment sites of MoS2, making MoS2 less likely to be enriched on the cell surface. The findings have significant contribution for understanding the interactions between EPS and MoS2 in aquatic ecosystems, providing scientific guidance for risk assessment of 2D-NMs.
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Affiliation(s)
- Manman Cao
- School of Environment, Beijing Normal University, 19 Xinjiekouwai Street, 100875 Beijing, China
| | - Donghong Yang
- School of Energy & Environmental Engineering, Beijing Key Laboratory of Resource-Oriented Treatment of Industrial Pollutants, University of Science and Technology Beijing, 30 Xueyuan Road, 100083 Beijing, China
| | - Fei Wang
- School of Environment, Beijing Normal University, 19 Xinjiekouwai Street, 100875 Beijing, China.
| | - Beihai Zhou
- School of Energy & Environmental Engineering, Beijing Key Laboratory of Resource-Oriented Treatment of Industrial Pollutants, University of Science and Technology Beijing, 30 Xueyuan Road, 100083 Beijing, China
| | - Huilun Chen
- School of Energy & Environmental Engineering, Beijing Key Laboratory of Resource-Oriented Treatment of Industrial Pollutants, University of Science and Technology Beijing, 30 Xueyuan Road, 100083 Beijing, China
| | - Rongfang Yuan
- School of Energy & Environmental Engineering, Beijing Key Laboratory of Resource-Oriented Treatment of Industrial Pollutants, University of Science and Technology Beijing, 30 Xueyuan Road, 100083 Beijing, China
| | - Ke Sun
- School of Environment, Beijing Normal University, 19 Xinjiekouwai Street, 100875 Beijing, China
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10
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Strauß F, Schedel C, Scheele M. Edge contacts accelerate the response of MoS 2 photodetectors. NANOSCALE ADVANCES 2023; 5:3494-3499. [PMID: 37383070 PMCID: PMC10295078 DOI: 10.1039/d3na00223c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 06/02/2023] [Indexed: 06/30/2023]
Abstract
We use a facile plasma etching process to define contacts with an embedded edge geometry for multilayer MoS2 photodetectors. Compared to the conventional top contact geometry, the detector response time is accelerated by more than an order of magnitude by this action. We attribute this improvement to the higher in-plane mobility and direct contacting of the individual MoS2 layers in the edge geometry. With this method, we demonstrate electrical 3 dB bandwidths of up to 18 MHz which is one of the highest values reported for pure MoS2 photodetectors. We anticipate that this approach should also be applicable to other layered materials, guiding a way to faster next-generation photodetectors.
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Affiliation(s)
- Fabian Strauß
- Institute of Physical and Theoretical Chemistry, University of Tübingen Auf der Morgenstelle 18 72076 Tübingen Germany
- LISA+, University of Tübingen Auf der Morgenstelle 15 72076 Tübingen Germany
| | - Christine Schedel
- Institute of Physical and Theoretical Chemistry, University of Tübingen Auf der Morgenstelle 18 72076 Tübingen Germany
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry, University of Tübingen Auf der Morgenstelle 18 72076 Tübingen Germany
- LISA+, University of Tübingen Auf der Morgenstelle 15 72076 Tübingen Germany
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11
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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12
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Ogura H, Kawasaki S, Liu Z, Endo T, Maruyama M, Gao Y, Nakanishi Y, Lim HE, Yanagi K, Irisawa T, Ueno K, Okada S, Nagashio K, Miyata Y. Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics. ACS NANO 2023; 17:6545-6554. [PMID: 36847351 DOI: 10.1021/acsnano.2c11927] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS2 from the edges of mechanically exfoliated multilayer flakes of WSe2 or NbxMo1-xS2. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS2 on the exfoliated flakes. For the WSe2/MoS2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the NbxMo1-xS2/MoS2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS2. The formation of a staggered gap band alignment of NbxMo1-xS2/MoS2 is also supported by first-principles calculations.
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Affiliation(s)
- Hiroto Ogura
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Seiya Kawasaki
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yanlin Gao
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Hong En Lim
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Toshifumi Irisawa
- Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
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13
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Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS 2field-effect transistors. NANOTECHNOLOGY 2023; 34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS2based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2interface for optimum MoS2-based device performance. The tunable band-gap of MoS2with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2and its effect on structural and electronic properties are extensively discussed.
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Affiliation(s)
- Laxman Raju Thoutam
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| | - Ribu Mathew
- School of Electrical & Electronics Engineering, VIT Bhopal University, Bhopal, 466114, India
| | - J Ajayan
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shubham Tayal
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shantikumar V Nair
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
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14
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Guo W, Li M, Wu X, Liu Y, Ou T, Xiao C, Qiu Z, Zheng Y, Wang Y. Nonvolatile n-Type Doping and Metallic State in Multilayer-MoS 2 Induced by Hydrogenation Using Ionic-Liquid Gating. NANO LETTERS 2022; 22:8957-8965. [PMID: 36342413 DOI: 10.1021/acs.nanolett.2c03159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H+, into layered MoS2 to manipulate its carrier concentration. The measurements demonstrate that the injection of H+ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS2 with a concentration of injection electron of ∼1.08 × 1013 cm-2 but has no effect on monolayer-MoS2, which clearly reveals that the H+ is injected into the interlayer of MoS2, not in the crystal lattice. The H+-injected multilayer-MoS2 was then used as the contact electrodes of a monolayer-MoS2 field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.
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Affiliation(s)
- Wenxuan Guo
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Mengge Li
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Xiaoxiang Wu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yali Liu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Tianjian Ou
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Cong Xiao
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Zhanjie Qiu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yuan Zheng
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yewu Wang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing210093, People's Republic of China
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15
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Cho K, Lee T, Chung S. Inkjet printing of two-dimensional van der Waals materials: a new route towards emerging electronic device applications. NANOSCALE HORIZONS 2022; 7:1161-1176. [PMID: 35894100 DOI: 10.1039/d2nh00162d] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials are considered one of the most promising candidates to realize emerging electrical applications. Although until recently, much effort has been dedicated to demonstrating high-performance single 2D vdW devices, associated with rapid progress in 2D vdW materials, demands for their large-scale practical applications have noticeably increased from a manufacturing perspective. Drop-on-demand inkjet printing can be the most feasible solution by exploiting the advantages of layered 2D contacts and advanced 2D vdW ink formulations. This review presents recent achievements in inkjet-printed 2D vdW material-based device applications. A brief introduction to 2D vdW materials and inkjet printing principles, followed by various ink formulation methods, is first presented. Then, the state-of-the-art inkjet-printed 2D vdW device applications and their remaining technical issues are highlighted. Finally, prospects and challenges to be overcome to demonstrate fully inkjet-printed, high-performance 2D vdW devices are also discussed.
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Affiliation(s)
- Kyungjune Cho
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea.
- KHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul, 02447, Korea
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16
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Guo X, Wang Y, Elbourne A, Mazumder A, Nguyen CK, Krishnamurthi V, Yu J, Sherrell PC, Daeneke T, Walia S, Li Y, Zavabeti A. Doped 2D SnS materials derived from liquid metal-solution for tunable optoelectronic devices. NANOSCALE 2022; 14:6802-6810. [PMID: 35471407 DOI: 10.1039/d2nr01135b] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Gas-liquid reaction phenomena on liquid-metal solvents can be used to form intriguing 2D materials with large lateral dimensions, where the free energies of formation determine the final product. A vast selection of elements can be incorporated into the liquid metal-based nanostructures, offering a versatile platform for fabricating novel optoelectronic devices. While conventional doping techniques of semiconductors present several challenges for 2D materials. Liquid metals provide a facile route for obtaining doped 2D semiconductors. In this work, we successfully demonstrate that the doping of 2D SnS can be realized in a glove box containing a diluted H2S gas. Low melting point elements such as Bi and In are alloyed with base liquid Sn in varying concentrations, resulting in the doping of 2D SnS layers incorporating Bi and In sulphides. Optoelectronic properties for photodetectors and piezoelectronics can be fine-tuned through the controlled introduction of selective migration doping. The structural modification of 2D SnS results in a 22.6% enhancement of the d11 piezoelectric coefficient. In addition, photodetector response times have increased by several orders of magnitude. Doping methods using liquid metals have significantly changed the photodiode and piezoelectric device performances, providing a powerful approach to tune optoelectronic device outputs.
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Affiliation(s)
- Xiangyang Guo
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yichao Wang
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- School of Life and Environmental Sciences, Deakin University, Geelong, Victoria, 3216, Australia
| | - Aaron Elbourne
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Aishani Mazumder
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Chung Kim Nguyen
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | | | - Jerry Yu
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
| | - Torben Daeneke
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Yongxiang Li
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Ali Zavabeti
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia.
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17
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Zeng H, Hu X, Zhou Q, Luo J, Hou X. Extracellular polymeric substances mediate defect generation and phytotoxicity of single-layer MoS 2. JOURNAL OF HAZARDOUS MATERIALS 2022; 429:128361. [PMID: 35236038 DOI: 10.1016/j.jhazmat.2022.128361] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Revised: 01/17/2022] [Accepted: 01/24/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional transition metal dichalcogenide (TMDC) nanomaterials have attracted tremendous research interest in various fields, but the effects of eco-corona formation on the transformation mechanisms and ecological risk of TMDCs remain largely unknown. The effect of eco-corona formation on TMDC reactivity was explored using extracellular polymeric substances (EPS) as the eco-corona constituents and single-layer molybdenum disulfide (SLMoS2) as the model TMDC. We found that EPS promoted lattice distortion and the formation of defects (sulfur vacancies and pores) on SLMoS2 after it was aged (precoated) with EPS under simulated visible-light irradiation. In addition, the EPS-corona induced higher free radical (especially hyperoxide radical) photogeneration by SLMoS2. Furthermore, compared to pristine SLMoS2, SLMoS2-EPS exhibited stronger developmental inhibition, oxidative stress, membrane damage, photosynthetic toxicity and metabolic perturbation effects on Chlorella vulgaris. However, the endocytosis pathway (especially macropinocytosis) of SLMoS2 entry into C. vulgaris was inhibited by EPS. Metabolic and transcriptomic analyses revealed that the enhanced toxicity of SLMoS2-EPS was associated with the downregulation of fatty acid metabolism and transcription related to photosynthesis, respectively. The present work provides mechanistic insights into the roles of the EPS-corona on the environmental transformation and phytotoxicity of TMDCs, which benefit environmental safety assessments and sustainable applications of engineered nanomaterials.
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Affiliation(s)
- Hui Zeng
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China
| | - Xiangang Hu
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China
| | - Qixing Zhou
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China.
| | - Jiwei Luo
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China
| | - Xuan Hou
- Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education)/Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China
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18
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Cho Y, Lee S, Cho H, Kang D, Yi Y, Kim K, Park JH, Im S. Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO 3 and LiF. SMALL METHODS 2022; 6:e2101073. [PMID: 35037415 DOI: 10.1002/smtd.202101073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 12/10/2021] [Indexed: 06/14/2023]
Abstract
To dope 2D semiconductor channels, charge-transfer doping has generally been done by thermal deposition of inorganic or organic thin-film layers on top of the 2D channel in bottom-gate field-effect transistors (FETs). The doping effects are reproducible in most cases. However, such thermal deposition will damage the surface of 2D channels due to the kinetic energy of depositing atoms, causing hysteresis or certain degradation. Here, a more desirable charge-transfer doping process is suggested. A damage-free charge-transfer doping is conducted for 2D MoTe2 (or MoS2 ) channels using a polydimethylsiloxane stamp. MoO3 or LiF is initially deposited on the stamp as a doping medium. Hysteresis-minimized transfer characteristics are achieved from stamp-doped FETs, while other devices with direct thermal deposition-doped channels show large hysteresis. The stamping method seems to induce a van der Waals-like damage-free interface between the channel and doping media. The stamp-induced doping is also well applied for a MoTe2 -based complementary inverter because MoO3 - and LiF-doping by separate stamps effectively modifies two ambipolar MoTe2 channels to p- and n-type, respectively.
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Affiliation(s)
- Yongjae Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Sol Lee
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Hyunmin Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Donghee Kang
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Kwanpyo Kim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
| | - Ji Hoon Park
- Department of Electronics and Electrical Engineering, Dankook University, Yongin, 16890, South Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea
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Yu Q, Wang S, Zhang Y, Dong Z, Deng H, Guo K, Wang T, Shi X, Liu F, Xian T, Zhu S, Wu J, Zhang Z, Zhang K, Zhan L. Femtosecond ultrafast pulse generation with high-quality 2H-TaS 2 nanosheets via top-down empirical approach. NANOSCALE 2021; 13:20471-20480. [PMID: 34851329 DOI: 10.1039/d1nr07075d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Tantalum disulfide (TaS2), an emerging group VB transition metal dichalcogenide, with unique layered structure, rich phase diagrams, metallic behavior, higher carrier concentration and mobility is emerging as a prototype for revealing basic physical phenomena and developing practical applications. However, its photonics properties and even engineering-related processes are still rare. Here, the top-down experiment demonstration, including synthesis, thickness optimization and nonlinear optical application, has been reported. In addition, the ultrafast (∼373 fs) erbium-doped fiber pulse with a small time-bandwidth product (∼0.34) and long-term stability (∼25 days) was realized using the nonlinear absorption properties of the high-quality 2H-TaS2 nanosheet. These results suggest an experimental route for further ultrafast photonics exploration based on metallic transition metal dichalcogenides.
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Affiliation(s)
- Qiang Yu
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Shun Wang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
| | - Yan Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Zhuo Dong
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Xinyao Shi
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Fangqi Liu
- College of Science and Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Tianhao Xian
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Sicong Zhu
- College of Science and Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Ziyang Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Kai Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Li Zhan
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
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20
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Woo G, Yoo H, Kim T. Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation. MEMBRANES 2021; 11:membranes11120931. [PMID: 34940431 PMCID: PMC8709032 DOI: 10.3390/membranes11120931] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 11/16/2021] [Accepted: 11/22/2021] [Indexed: 12/29/2022]
Abstract
Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.
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Affiliation(s)
- Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 16419, Korea;
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
- Correspondence: (H.Y.); (T.K.)
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 16419, Korea;
- Department of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Korea
- Correspondence: (H.Y.); (T.K.)
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21
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Thomas CJ, Fonseca JJ, Spataru CD, Robinson JT, Ohta T. Electronic Structure and Stacking Arrangement of Tungsten Disulfide at the Gold Contact. ACS NANO 2021; 15:18060-18070. [PMID: 34623816 DOI: 10.1021/acsnano.1c06676] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
There is an intensive effort to control the nature of attractive interactions between ultrathin semiconductors and metals and to understand its impact on the electronic properties at the junction. Here, we present a photoelectron spectroscopy study on the interface between WS2 films and gold, with a focus on the occupied electronic states near the Brillouin zone center (i.e., the Γ point). To delineate the spectra of WS2 supported on crystalline Au from the suspended WS2, we employ a microscopy approach and a tailored sample structure, in which the WS2/Au junction forms a semi-epitaxial relationship and is adjacent to suspended WS2 regions. The photoelectron spectra, as a function of WS2 thickness, display the expected splitting of the highest occupied states at the Γ point. In multilayer WS2, we discovered variations in the electronic states that spatially align with the crystalline grains of underlying Au. Corroborated by density functional theory calculations, we attribute the electronic structure variations to stacking variations within the WS2 films. We propose that strong interactions exerted by Au grains cause slippage of the interfacing WS2 layer with respect to the rest of the WS2 film. Our findings illustrate that the electronic properties of transition metal dichalcogenides, and more generally 2D layered materials, are physically altered by the interactions with the interfacing materials, in addition to the electron screening and defects that have been widely considered.
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Affiliation(s)
- Cherrelle J Thomas
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Jose J Fonseca
- National Research Council Postdoctoral Fellow at the Naval Research Laboratory, Washington, District of Columbia 20375 United States
| | - Catalin D Spataru
- Sandia National Laboratories, Livermore, California 94551, United States
| | - Jeremy T Robinson
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375 United States
| | - Taisuke Ohta
- Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
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22
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Hernandez Ruiz K, Wang Z, Ciprian M, Zhu M, Tu R, Zhang L, Luo W, Fan Y, Jiang W. Chemical Vapor Deposition Mediated Phase Engineering for 2D Transition Metal Dichalcogenides: Strategies and Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100047] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
Affiliation(s)
- Karla Hernandez Ruiz
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Ziqian Wang
- Department of Materials Science and Engineering Johns Hopkins University Baltimore MD 21218 USA
| | - Matteo Ciprian
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Rong Tu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Lianmeng Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Wei Luo
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Yuchi Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Wan Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
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23
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Brunet Cabré M, Paiva AE, Velický M, Colavita PE, McKelvey K. Electrochemical kinetics as a function of transition metal dichalcogenide thickness. Electrochim Acta 2021. [DOI: 10.1016/j.electacta.2021.139027] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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24
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Observation of pressure induced charge density wave order and eightfold structure in bulk VSe 2. Sci Rep 2021; 11:18157. [PMID: 34518573 PMCID: PMC8437963 DOI: 10.1038/s41598-021-97630-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Accepted: 08/19/2021] [Indexed: 11/30/2022] Open
Abstract
Pressure-induced charge density wave (CDW) state can overcome the low-temperature limitation for practical application, thus seeking its traces in experiments is of great importance. Herein, we provide spectroscopic evidence for the emergence of room temperature CDW order in the narrow pressure range of 10–15 GPa in bulk VSe2. Moreover, we discovered an 8-coordination structure of VSe2 with C2/m symmetry in the pressure range of 35–65 GPa by combining the X-ray absorption spectroscopy, X-ray diffraction experiments, and the first-principles calculations. These findings are beneficial for furthering our understanding of the charge modulated structure and its behavior under high pressure.
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25
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Ogura H, Kaneda M, Nakanishi Y, Nonoguchi Y, Pu J, Ohfuchi M, Irisawa T, Lim HE, Endo T, Yanagi K, Takenobu T, Miyata Y. Air-stable and efficient electron doping of monolayer MoS 2 by salt-crown ether treatment. NANOSCALE 2021; 13:8784-8789. [PMID: 33928997 DOI: 10.1039/d1nr01279g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
To maximize the potential of transition-metal dichalcogenides (TMDCs) in device applications, the development of a sophisticated technique for stable and highly efficient carrier doping is critical. Here, we report the efficient n-type doping of monolayer MoS2 using KOH/benzo-18-crown-6, resulting in a doped TMDC that is air-stable. MoS2 field-effect transistors show an increase in on-current of three orders of magnitude and degenerate the n-type behaviour with high air-stability for ∼1 month as the dopant concentration increases. Transport measurements indicate a high electron density of 3.4 × 1013 cm-2 and metallic-type temperature dependence for highly doped MoS2. First-principles calculations support electron doping via surface charge transfer from the K/benzo-18-crown-6 complex to monolayer MoS2. Patterned doping is demonstrated to improve the contact resistance in MoS2-based devices.
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Affiliation(s)
- Hiroto Ogura
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
| | - Masahiko Kaneda
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
| | - Yoshiyuki Nonoguchi
- Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585, Japan
| | - Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Mari Ohfuchi
- Fujitsu Laboratories Ltd, Atsugi, 243-0197, Japan
| | | | - Hong En Lim
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, 192-0397, Japan.
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26
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Lin Y, Torsi R, Geohegan DB, Robinson JA, Xiao K. Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004249. [PMID: 33977064 PMCID: PMC8097379 DOI: 10.1002/advs.202004249] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Revised: 12/06/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.
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Affiliation(s)
- Yu‐Chuan Lin
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Riccardo Torsi
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - David B. Geohegan
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Joshua A. Robinson
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Two‐Dimensional Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Kai Xiao
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
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27
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Cho H, Kang D, Lee Y, Bae H, Hong S, Cho Y, Kim K, Yi Y, Park JH, Im S. Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS 2 Field Effect Transistors. NANO LETTERS 2021; 21:3503-3510. [PMID: 33856222 DOI: 10.1021/acs.nanolett.1c00180] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Molybdenum disulfide (MoS2) has been regarded as one of the most important n-type two-dimensional (2D) transition metal dichalcogenide semiconductors for nanoscale electron devices. Relatively high contact resistance (RC) remains as an issue in the 2D-devices yet to be resolved. Reliable technique is very compelling to practically produce low RC values in device electronics, although scientific approaches have been made to obtain a record-low RC. To resolve this practical issue, we here use thermal-evaporated ultrathin LiF between channel and source/drain metal to fabricate 2D-like MoS2 field effect transistors (FETs) with minimum RC. Under 4-bar FET method, RC less than ∼600 Ω·μm is achieved from the LiF/Au contact MoS2 FET. Our normal 2-bar FET with LiF thus shows the same mobility as that of 4-bar FET that should have no RC in principle. On the basis of these results, ultrathin LiF is also applied for transparent conducting oxide contact, successfully enabling transparent MoS2 FETs.
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Affiliation(s)
- Hyunmin Cho
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Donghee Kang
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Yangjin Lee
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Heesun Bae
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Sungjae Hong
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Yongjae Cho
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Ji Hoon Park
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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28
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Liu Y, Gu F. A wafer-scale synthesis of monolayer MoS 2 and their field-effect transistors toward practical applications. NANOSCALE ADVANCES 2021; 3:2117-2138. [PMID: 36133770 PMCID: PMC9419721 DOI: 10.1039/d0na01043j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Accepted: 02/17/2021] [Indexed: 05/11/2023]
Abstract
Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.
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Affiliation(s)
- Yuchun Liu
- Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
| | - Fuxing Gu
- Laboratory of Integrated Opto-Mechanics and Electronics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology Shanghai 200093 China
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29
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Wang S, Cui X, Jian C, Cheng H, Niu M, Yu J, Yan J, Huang W. Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005735. [PMID: 33719078 DOI: 10.1002/adma.202005735] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Revised: 10/30/2020] [Indexed: 06/12/2023]
Abstract
The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create "van der Waals heterostructures (HSs)," opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.
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Affiliation(s)
- Shixuan Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Xuehao Cui
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Chang'e Jian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Haowei Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Mengmeng Niu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jia Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jiaxu Yan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
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30
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Xu C, Yong HW, He J, Long R, Cadore AR, Paradisanos I, Ott AK, Soavi G, Tongay S, Cerullo G, Ferrari AC, Prezhdo OV, Loh ZH. Weak Distance Dependence of Hot-Electron-Transfer Rates at the Interface between Monolayer MoS 2 and Gold. ACS NANO 2021; 15:819-828. [PMID: 33347267 DOI: 10.1021/acsnano.0c07350] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and atomic force microscopy to investigate the spatially resolved hot-electron-transfer dynamics at the monolayer (1L) MoS2/Au interface. A spatially heterogeneous distribution of 1L-MoS2/Au gap distances, along with the sub-80 nm spatial- and sub-60 fs temporal resolution of TR-PEEM, permits the simultaneous measurement of electron-transfer rates across a range of 1L-MoS2/Au distances. These decay exponentially as a function of distance, with an attenuation coefficient β ∼ 0.06 ± 0.01 Å-1, comparable to molecular wires. Ab initio simulations suggest that surface plasmon-like states mediate hot-electron-transfer, hence accounting for its weak distance dependence. The weak distance dependence of the interfacial hot-electron-transfer rate indicates that this process is insensitive to distance fluctuations at the TMD/metal interface, thus motivating further exploration of optoelectronic devices based on hot carriers.
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Affiliation(s)
- Ce Xu
- Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Hui Wen Yong
- Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Jinlu He
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Ioannis Paradisanos
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Anna K Ott
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
- Institute for Solid State Physics, Abbe Center of Photonics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giulio Cerullo
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano Italy
- IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Zhi-Heng Loh
- Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Optical Fibre Technology, The Photonics Institute, Nanyang Technological University, Singapore 639798, Singapore
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