Advance in multi-hit detection and quantization in atom probe tomography

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography

This study investigates the impact of the surface electric field on the quantification accuracy of boron (B) implanted silicon (Si) using atom probe tomography (APT). The Si Charge-State Ratio (CSR(Si) = Si2+/Si+) was used as an indirect measure of the average apex electric field during analysis. For a range of electric fields, the accuracy of the total implanted dose and the depth profile shape determined by APT was evaluated against the National Institute of Standards and Technology Standard Reference Material 2137. The radial (non-)uniformity of the detected B was also examined. At a higher surface electric field (i.e., a greater CSR(Si)), the determined B dose converges on the certified dose. Additionally, the depth profile shape tends towards that derived by secondary ion mass spectrometry. This improvement coincides with a more uniform radial B distribution, evidenced by desorption maps. In contrast, for lower surface electric fields (i.e., a lower CSR(Si)), the B dose is significantly underestimated, and the depth profile is artificially stretched. The desorption maps also indicate a highly inhomogeneous B emission localized around the center of the detector, which is believed to be an artifact of B surface migration on the tip of the sample. For the purposes of routine investigations of semiconductor devices using APT, these results illustrate the potential origin of quantification artifacts and their severity at different operating conditions, thus providing pathways towards best practices for accurate and repeatable measurements.

Characterization of Carbide Precipitation in Low-Carbon Martensitic Steels Using an Ultrawide Field-of-View 3D Atom Probe

It is important to understand the carbide distribution around high-energy sites such as dislocations and grain boundaries in martensitic steels as they have a major influence on the alloy performance. The aim of this study is to characterize fine ε carbides precipitated in low-carbon lath martensitic steel using the ultrawide field-of-view (FoV) CAMECA Invizo 6000 atom probe. We demonstrate the advantages of the wide FoV and determine the optimum conditions for analysis, by comparing the results such as the background noise and the C++/C+ charge state ratio (CSR) between voltage-pulsed and laser-pulsed modes. Increasing the laser pulse energy decreased the background noise and the CSR, where 70 pJ laser pulse energy produced a comparable mass-to-charge ratio spectrum to that recorded in voltage-pulsed mode, with the bulk compositions of C, Si, and Mn closest to that measured using voltage-pulsed mode. Increasing laser pulse energies to above 300 pJ decreased the bulk carbon content, with a more diffuse distribution of carbon around the carbides. This paper outlines some of the important experimental considerations when performing quantitative study of carbide precipitation in low-carbon martensitic steels using the Invizo 6000, considerations that can also be applied to other ferrous and non-ferrous alloy systems.

Revisiting Compositional Accuracy of Carbides Using a Decreased Detector Efficiency in a LEAP 6000 XR Atom Probe Instrument

The accuracy of carbon composition measurement of carbide precipitates in steel or other alloys is limited by the evaporation characteristics of carbon and the performance of current detector systems. Carbon evaporates in a higher fraction as clustered ions leading to detector pile-up during so-called multiple hits. To achieve higher accuracy, a grid was positioned behind the local electrode, reducing the detection efficiency from 52 to 7% and thereby reducing the fraction of multi-hit events. This work confirms the preferential loss of carbon due to detector pile-up. Furthermore, we demonstrate that the newer generation of commercial atom probe instruments displays somewhat higher discrepancy of carbon composition than previous generations. The reason for this might be different laser-matter interaction leading to less metal ions in multi-hit events.

Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors

We investigate the microscopic behaviour of hydrogen-containing species formed on the surface of III-N semiconductor samples by the residual hydrogen in the analysis chamber in laser-assisted atom probe tomography (APT). We analysed AlGaN/GaN heterostructures containing alternate layers with a thickness of about 20 nm. The formation of H-containing species occurs at field strengths between 22 and 26 V/nm and is independent of the analysed samples. The 3D APT reconstruction makes it possible to map the evolution of the surface behaviour of these species issued by chemical reactions. The results highlight the strong dependence of the relative abundances of hydrides on the surface field during evaporation. The relative abundances of the hydrides decrease when the surface field increases due to the evolution of the tip shape or the different evaporation behaviour of the different layers.

Understanding the Nature of Crystallographic Bonds by Establishing the Correlation between Ion-Pair Chemistry and Their Separation in Detector Space

The occurrence of multi-hit events and the separation distance between multi-hit ion pairs field evaporated from III-nitride semiconductors can potentially provide insights on neighboring chemistry, crystal structure, and field conditions. In this work, we quantify the range of variation in major III-N and III-III ion-pair separation to establish correlations with bulk composition, growth method, and ion-pair chemistry. The analysis of ion-pair separation along the AlGaN/GaN heterostructure system allows for comparison of Ga-N and Ga-Ga ion-pair separation between events evaporated from pure GaN and Al0.3Ga0.7N. From this, we aim to define a relative measure for the bond length of ion pairs within an AlGaN/GaN heterostructure. The distributions of pair separation revealed a distinct bimodal behavior that is unique to Al-N2+ ion pairs, suggesting the occurrence of both co-evaporation and molecular dissociation. Finally, we demonstrated that the two modes of ion-pair events align with the known variation in the surface electric field of the AlGaN(0001) structure. These findings demonstrate the utility of atom probe tomography in studying the crystallographic nature of nitride semiconductors.

Development of an Energy-Sensitive Detector for the Atom Probe Tomography

A position and energy-sensitive detector has been developed for atom probe tomography (APT) instruments in order to deal with some mass peak overlap issues encountered in APT experiments. Through this new type of detector, quantitative and qualitative improvements could be considered for critical materials with mass peak overlaps, such as nitrogen and silicon in TiSiN systems, or titanium and carbon in cemented carbide materials. This new detector is based on a thin carbon foil positioned on the front panel of a conventional MCP-DLD detector. According to several studies, it has been demonstrated that the impact of ions on thin carbon foils has the effect of generating a number of transmitted and reflected secondary electrons. The number generated mainly depends on both the kinetic energy and the mass of incident particles. Despite the fact that this phenomenon is well known and has been widely discussed for decades, no studies have been performed to date for using it as a means to discriminate particles energy. Therefore, this study introduces the first experiments on a potential new generation of APT detectors that would be able to resolve mass peak overlaps through the energy-sensitivity of thin carbon foils.

Analytical Three-Dimensional Field Ion Microscopy of an Amorphous Glass FeBSi

Three-dimensional field ion microscopy is a powerful technique to analyze material at a truly atomic scale. Most previous studies have been made on pure, crystalline materials such as tungsten or iron. In this article, we study more complex materials, and we present the first images of an amorphous sample, showing the capability to visualize the compositional fluctuations compatible with theoretical medium order in a metallic glass (FeBSi), which is extremely challenging to observe directly using other microscopy techniques. The intensity of the spots of the atoms at the moment of field evaporation in a field ion micrograph can be used as a proxy for identifying the elemental identity of the imaged atoms. By exploiting the elemental identification and positioning information from field ion images, we show the capability of this technique to provide imaging of recrystallized phases in the annealed sample with a superior spatial resolution compared with atom probe tomography.

Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography

The measurement of the composition of ε-Ga2O3 and the quantification of Sn doping in ε-Ga2O3:Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending on the experimental conditions. Both the role of the laser energy and surface electric field were investigated, and the results clearly indicate that deviations from stoichiometry are observed changing the electric field conditions during APT. The measured atomic fraction of Ga can change from 0.45 at low field to 0.38 at high field, to be compared with the expected 0.4. This was interpreted in terms of preferential evaporation of Ga at high field and deficit of O at low field, which was caused by the formation of neutrals. The quantification of Sn-doping is accurate at low-field conditions, with an overestimation of the detected Sn-metallic fraction at high field. This suggests that Sn has a higher evaporation field compared to Ga. Finally, multiple detection events were in-depth studied, revealing that three dissociation reactions occur during APT: GaO2+ → Ga+ + O+; Ga2O22+ → Ga+ + GaO2+; Ga3O22+ → Ga+ + Ga2O2+. Nevertheless, only 2% of the detected events are related to such dissociation reactions, too small a fraction to fully explain the observed deviation from the stoichiometric composition in ε-Ga2O3.

Study of LEAP® 5000 Deadtime and Precision via Silicon Pre-Sharpened-Microtip™ Standard Specimens

Atom probe tomography (APT) is a technique that has expanded significantly in terms of adoption, dataset size, and quality during the past 15 years. The sophistication used to ensure ultimate analysis precision has not kept pace. The earliest APT datasets were small enough that deadtime and background considerations for processing mass spectrum peaks were secondary. Today, datasets can reach beyond a billion atoms so that high precision data processing procedures and corrections need to be considered to attain reliable accuracy at the parts-per-million level. This paper considers options for mass spectrum ranging, deadtime corrections, and error propagation as applied to an extrinsic-silicon standard specimen to attain agreement for silicon isotopic fraction measurements across multiple instruments, instrument types, and acquisition conditions. Precision consistent with those predicted by counting statistics is attained showing agreement in silicon isotope fraction measurements across multiple instruments, instrument platforms, and analysis conditions.

3D sub-nanometer analysis of glucose in an aqueous solution by cryo-atom probe tomography

Atom Probe Tomography (APT) is currently a well-established technique to analyse the composition of solid materials including metals, semiconductors and ceramics with up to near-atomic resolution. Using an aqueous glucose solution, we now extended the technique to frozen solutions. While the mass signals of the common glucose fragments C_xH_y and C_xO_yH_z overlap with (H₂O)_nH from water, we achieved stoichiometrically correct values via signal deconvolution. Density functional theory (DFT) calculations were performed to investigate the stability of the detected pyranose fragments. This paper demonstrates APT’s capabilities to achieve sub-nanometre resolution in tracing whole glucose molecules in a frozen solution by using cryogenic workflows. We use a solution of defined concentration to investigate the chemical resolution capabilities as a step toward the measurement of biological molecules. Due to the evaporation of nearly intact glucose molecules, their position within the measured 3D volume of the solution can be determined with sub-nanometre resolution. Our analyses take analytical techniques to a new level, since chemical characterization methods for cryogenically-frozen solutions or biological materials are limited.

High-resolution terahertz-driven atom probe tomography

Ultrafast control of matter by a strong electromagnetic field on the atomic scale is essential for future investigations and manipulations of ionization dynamics and excitation in solids. Coupling picosecond duration terahertz pulses to metallic nanostructures allows the generation of extremely localized and intense electric fields. Here, using single-cycle terahertz pulses, we demonstrate control over field ion emission from metallic nanotips. The terahertz near field is shown to induce an athermal ultrafast evaporation of surface atoms as ions on the subpicosecond time scale, with the tip acting as a field amplifier. The ultrafast terahertz-ion interaction offers unprecedented control over ultrashort free-ion pulses for imaging, analyzing, and manipulating matter at atomic scales. Here, we demonstrate terahertz atom probe microscopy as a new platform for microscopy with atomic spatial resolution and ultimate chemical resolution.

Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale

Attaining low-resistivity Al_xGa_1-xN layers is one keystone to improve the efficiency of light-emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Al_xGa_1-xN/Ge samples with 0 ≤ x ≤ 1, and a nominal doping level in the range of 10²⁰ cm^-3, together with the measurement of Ge concentration and its spatial distribution down to the nanometer scale. Al_xGa_1-xN/Ge samples with x ≤ 0.2 do not present any sign of inhomogeneity. However, samples with x > 0.4 display μm-size Ge crystallites at the surface. Ge segregation is not restricted to the surface: Ge-rich regions with a size of tens of nanometers are observed inside the Al_xGa_1-xN/Ge layers, generally associated with Ga-rich regions around structural defects. With these local exceptions, the Al_xGa_1-xN/Ge matrix presents a homogeneous Ge composition which can be significantly lower than the nominal doping level. Precise measurements of Ge in the matrix provide a view of the solubility diagram of Ge in Al_xGa_1-xN as a function of the Al mole fraction. The solubility of Ge in AlN is extremely low. Between AlN and GaN, the solubility increases linearly with the Ga mole fraction in the ternary alloy, which suggests that the Ge incorporation takes place by substitution of Ga atoms only. The maximum percentage of Ga sites occupied by Ge saturates around 1%. The solubility issues and Ge segregation phenomena at different length scales likely play a role in the efficiency of Ge as an n-type AlGaN dopant, even at Al concentrations where Ge DX centers are not expected to manifest. Therefore, this information can have direct impact on the performance of Ge-doped AlGaN light-emitting diodes, particularly in the spectral range for disinfection (≈260 nm), which requires heavily doped alloys with a high Al mole fraction.

Atom probe tomography

Atom probe tomography (APT) provides three-dimensional compositional mapping with sub-nanometre resolution. The sensitivity of APT is in the range of parts per million for all elements, including light elements such as hydrogen, carbon or lithium, enabling unique insights into the composition of performance-enhancing or lifetime-limiting microstructural features and making APT ideally suited to complement electron-based or X-ray-based microscopies and spectroscopies. Here, we provide an introductory overview of APT ranging from its inception as an evolution of field ion microscopy to the most recent developments in specimen preparation, including for nanomaterials. We touch on data reconstruction, analysis and various applications, including in the geosciences and the burgeoning biological sciences. We review the underpinnings of APT performance and discuss both strengths and limitations of APT, including how the community can improve on current shortcomings. Finally, we look forwards to true atomic-scale tomography with the ability to measure the isotopic identity and spatial coordinates of every atom in an ever wider range of materials through new specimen preparation routes, novel laser pulsing and detector technologies, and full interoperability with complementary microscopy techniques.

Detecting Dissociation Dynamics of Phosphorus Molecular Ions by Atom Probe Tomography

Dissociation processes involving phosphorus cations were investigated during laser-assisted atom probe tomography of crystalline indium phosphide (InP). This technique not only allows the formation of medium-sized phosphorus cations by means of femtosecond laser pulses under ultrahigh vacuum and high electric field conditions but also allows one to study the time-resolved dissociation dynamics. Data reveal the formation of cations up to P₂₃²⁺ and their subsequent dissociation into two smaller P_k⁺ cations (k > 2). The use of a time- and position-sensitive detector combined with numerical calculations provided information related to the molecule orientation, decay time, and kinetic energy release during dissociation phenomena. Results suggest that the dissociation processes are most likely due to the emission of P_k²⁺ cations in excited states and their subsequent decay in low field regions during their flight toward the detector. This study provides operative guidelines to obtain information on dissociation processes using a tomographic atom probe as a reaction microscope and indicates the current capabilities and limitations of such an approach.

Super-resolution Optical Spectroscopy of Nanoscale Emitters within a Photonic Atom Probe

Atom Probe Tomography (APT) is a microscopy technique allowing for the 3D reconstruction of the chemical composition of a nanoscale needle-shaped sample with a precision close to the atomic scale. The photonic atom probe (PAP) is an evolution of APT featuring in situ and operando detection of the photoluminescence signal. The optical signatures of the light-emitting centers can be correlated with the structural and chemical information obtained by the analysis of the evaporated ions. It becomes thus possible to discriminate and interpret the spectral signatures of different light emitters as close as 20 nm, well beyond the resolution limit set by the exciting laser wavelength. This technique opens up new perspectives for the study of the physics of low dimensional systems, defects and optoelectronic devices.

A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopy

Laser enhanced field evaporation of surface atoms in laser-assisted Atom Probe Tomography (APT) can simultaneously excite photoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in situ micro-photoluminescence (μPL) bench that can be operated during APT analysis. The photonic atom probe instrument we have developed operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An example of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probes.

Chalcogenides by Design: Functionality through Metavalent Bonding and Confinement

A unified picture of different application areas for incipient metals is presented. This unconventional material class includes several main-group chalcogenides, such as GeTe, PbTe, Sb₂ Te₃ , Bi₂ Se₃ , AgSbTe₂ and Ge₂ Sb₂ Te₅ . These compounds and related materials show a unique portfolio of physical properties. A novel map is discussed, which helps to explain these properties and separates the different fundamental bonding mechanisms (e.g., ionic, metallic, and covalent). The map also provides evidence for an unconventional, new bonding mechanism, coined metavalent bonding (MVB). Incipient metals, employing this bonding mechanism, also show a special bond breaking mechanism. MVB differs considerably from resonant bonding encountered in benzene or graphite. The concept of MVB is employed to explain the unique properties of materials utilizing it. Then, the link is made from fundamental insights to application-relevant properties, crucial for the use of these materials as thermoelectrics, phase change materials, topological insulators or as active photonic components. The close relationship of the materials' properties and their application potential provides optimization schemes for different applications. Finally, evidence will be presented that for metavalently bonded materials interesting effects arise in reduced dimensions. In particular, the consequences for the crystallization kinetics of thin films and nanoparticles will be discussed in detail.

Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs

With the objective of applying laser-assisted atom probe tomography to compositional analysis within nanoscale InGaAs devices, experimental conditions that may provide an accurate composition estimate were sought by extensively studying an InGaAs blanket film. Overall, the determined arsenic atomic fraction was found to exhibit an electric field dependent deficiency, which was more pronounced at low field conditions. Although the determined group III site-fraction also showed a (weak) field-dependent deficiency at low field conditions, it remained invariant with analysis conditions and in close agreement with the nominal value at higher field. In this study, we investigate and discuss the mechanisms that could potentially contribute to As underestimation. Given the field dependence observed, the phenomena occurring between low and high field conditions are compared. At low field, the tendency of As to field evaporate in significant amounts as multiply charged cluster ions (As_nⁱ⁺ with n as large as 9 and i = 1,2,3) is shown to be a significant source of compositional inaccuracy. These clusters may lead to peak overlap in the mass spectrum (e.g. the peak at 150 Da may represent As₄²⁺ or As₂⁺ or both), thereby creating an uncertainty in the quantification. Emitted clusters may also dissociate with the likelihood of neutral generation and multi-hit losses being non-negligible. Experimental studies and density functional theory calculations are presented to characterize cluster stability and its contribution to measurement uncertainty. Under high field conditions, although fewer clusters are detected and the composition appears more accurate, the emergence of two additional mechanisms, i.e., multi-hits and DC evaporation, may degrade the data quality. The challenges in evaluating the impact of all these loss mechanisms are examined in detail. Finally, we show that for InGaAs under UV illumination, due to the laser-tip interaction, the resulting asymmetric electric field distribution across the apex introduces local atomic fraction variations.

A Three-Dimensional Atom Probe Microscope Incorporating a Wavelength-Tuneable Femtosecond-Pulsed Coherent Extreme Ultraviolet Light Source

Pulsed coherent extreme ultraviolet (EUV) radiation is a potential alternative to pulsed near-ultraviolet (NUV) wavelengths for atom probe tomography. EUV radiation has the benefit of high absorption within the first few nm of the sample surface for elements across the entire periodic table. In addition, EUV radiation may also offer athermal field ion emission pathways through direct photoionization or core-hole Auger decay processes, which are not possible with the (much lower) photon energies used in conventional NUV laser-pulsed atom probe. We report preliminary results from what we believe to be the world's first EUV radiation-pulsed atom probe microscope. The instrument consists of a femtosecond-pulsed, coherent EUV radiation source interfaced to a local electrode atom probe tomograph by means of a vacuum manifold beamline. EUV photon-assisted field ion emission (of substrate atoms) has been demonstrated on various insulating, semiconducting, and metallic specimens. Select examples are shown.

Examining the Effect of Evaporation Field on Boron Measurements in SiGe: Insights into Improving the Relationship Between APT and SIMS Measurements of Boron

Understanding and resolving discrepancies between atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) measurements of B dopants in Si-based materials has long been a problem for those in the semiconductor community who wish to measure B within the source/drain SiGe of a device. APT data collection of Si-based materials is typically optimized for Si, which is logical, but perhaps not ideal for field evaporation of B. Increasing the evaporation field well beyond the typically used 28Si2+:28Si+ ratio of approximately 10:1 up to a ratio of ~200:1 is demonstrated to improve B detection while retaining well-matched Si and Ge concentrations with respect to those measured by SIMS. A range of evaporation conditions are examined from a very low field with high laser energy to an extremely high field with extremely low laser energy demonstrating problems at both far ends of the spectrum and a sweet spot when the operating conditions used produce a 28Si2+:28Si+ ratio of approximately 200:1 (in terms of total counts of each ionization state), which is more than an order of magnitude higher than normally used conditions and results in nicely matched B, Si, and Ge APT measurements with those of SIMS.

Spatial and Compositional Biases Introduced by Position Sensitive Detection Systems in APT: A Simulation Approach

Due to the low capacity of contemporary position-sensitive detectors in atom probe tomography (APT) to detect multiple events, material analyses that exhibit high numbers of multiple events are the most subject to compositional biases. To solve this limitation, some researchers have developed statistical correction algorithms. However, those algorithms are only efficient when one is confronted with homogeneous materials having nearly the same evaporation field between elements. Therefore, dealing with more complex materials must be accompanied by a better understanding of the signal loss mechanism during APT experiments. By modeling the evaporation mechanism and the whole APT detection system, it may be possible to predict compositional and spatial biases induced by the detection system. This paper introduces a systematic study of the impact of the APT detection system on material analysis through the development of a simulation tool.

Analyzing Boron in 9-12% Chromium Steels Using Atom Probe Tomography

Small additions of boron can remarkably improve the long-term creep resistance of 9-12% Cr steels. The improvement has been attributed to boron segregation to grain boundaries during quenching, and subsequent boron incorporation into certain families of precipitates during tempering. However, the detailed mechanisms are not yet fully understood. Atom probe tomography (APT) is an excellent technique for gaining insights into boron distribution, however, in order to acquire accurate analysis of boron in 9-12% Cr steels using APT, there are several key challenges. In order to better understand and address these challenges, we developed a novel method for site-specific APT specimen preparation, which enables convenient preparation of specimens containing specifically selected grain boundaries positioned approximately perpendicular to the axis of the APT tip. Additionally, when analyzing boron at boundaries and in carbides (as diluted solute) and borides, a widening of the profile of boron distribution compared to other elements was repeatedly observed. This phenomenon is particularly analyzed and discussed in light of the evaporation field of different elements. Finally, the possible effects of detector dead-time on quantitative analysis of boron in metal borides are discussed. A simple method using 10B correction was used to obtain good quantification.

Improving Compositional Accuracy in APT Analysis of Carbides Using a Decreased Detection Efficiency

The composition of carbides in steel, measured by atom probe tomography, can be influenced by limitations in the ion detector system. When carbides are analyzed, many ions tend to field evaporate from the same region of the specimen during the same laser or voltage pulse. This results in a so-called multiple event, meaning that several ions impact the detector in close proximity both in time and space. Due to a finite detector dead-time not all ions can be detected, a phenomenon known as detector pile-up. The evaporation behavior of carbon is often different than the evaporation behavior of metals when analyzing alloy carbides, leading to preferential loss of carbon ions, and a measured carbon concentration below the expected value. This effect becomes stronger as the overall detection efficiency gets higher. Here, the detection efficiency was deliberately reduced by inserting a grid into the flight-path, which resulted in a higher and more correct carbon concentration, accompanied by an increase in the statistical uncertainty.

Unraveling the Metastability of C n2+ ( n = 2-4) Clusters

Pure carbon clusters have received considerable attention for a long time. However, fundamental questions, such as what the smallest stable carbon cluster dication is, remain unclear. We investigated the stability and fragmentation behavior of C _n²⁺ ( n = 2-4) dications using state-of-the-art atom probe tomography. These small doubly charged carbon cluster ions were produced by laser-pulsed field evaporation from a tungsten carbide field emitter. Correlation analysis of the fragments detected in coincidence reveals that they only decay to C _n-1⁺ + C⁺. During C₂²⁺ → C⁺ + C⁺, significant kinetic energy release (∼5.75-7.8 eV) is evidenced. Through advanced experimental data processing combined with ab initio calculations and simulations, we show that the field-evaporated diatomic ¹²C₂²⁺ dications are either in weakly bound ³Π_u and ³Σ_g^- states, quickly dissociating under the intense electric field, or in a deeply bound electronic ⁵Σ_u^- state with lifetimes >180 ps.

Dissociation of GaN2+ and AlN2+ in APT: Analysis of experimental measurements

The use of a tip-shaped sample for the atom probe tomography technique offers the unique opportunity to analyze the dynamics of molecular ions in strong DC fields. We investigate here the stability of AlN²⁺ and GaN²⁺ dications emitted from an Al_0.25Ga_0.75N sample in a joint theoretical and experimental study. Despite the strong chemical resemblance of these two molecules, we observe only stable AlN²⁺, while GaN²⁺ can only be observed as a transient species. We simulate the emission dynamics of these ions on field-perturbed potential energy surfaces obtained from quantum chemical calculations. We show that the dissociation is governed by two independent processes. For all bound states, a mechanical dissociation is induced by the distortion of the potential energy surface in the close vicinity of the emitting tip. In the specific case of GaN²⁺, the relatively small electric dipole of the dication in its ground 1³Σ^- and excited 1¹Δ states induces a weak coupling with the electric field so that the mechanical dissociation into Ga⁺ + N⁺ lasts for sufficient time to be observed. By contrast, the AlN²⁺ mechanical dissociation leads to Al²⁺ + N which cannot be observed as a correlated event. For some deeply bound singlet excited states, the spin-orbit coupling with lower energy triplet states gives another chance of dissociation by system inter-system crossing with specific patterns observed experimentally in a correlated time of flight map.

Complex evaporation behavior of a transition metal carbo-nitride (Hf(C,N)) studied by atom probe tomography

The use of pulsed lasers in atom probe tomography has enabled the analysis of lower conductivity materials such as hafnium carbo-nitrides. The variability of experimental parameters can have a profound effect on field evaporation behavior, data quality and compositional accuracy. This is especially challenging for materials such as hafnium carbo-nitride, where a mixture of covalent, ionic and metallic bonding types is present. Here we study the influence of laser pulse energy on how the field evaporation evolves in a hafnium carbo-nitride and how that impacts data quality and compositional accuracy. Changing the laser pulse energy, while keeping other parameters constant, alters the resulting composition. A gain in Hf concentration is observed for higher laser pulse energies while at the same time the N concentration decreases. At lower laser pulse energies, the obtained composition is in good agreement with the reference bulk composition of the material. Furthermore, our results demonstrate that assessing the quality of an APT experiment or dataset merely based on commonly used metrics such as quality of mass spectrum, hit distribution on the detector, hit multiplicity and mass resolving power, can be misleading and is not enough to ensure the most accurate compositional data. Moreover, it is shown that the complex evaporation behavior of transition metal carbo-nitrides and potential ion loss mechanisms are not well enough understood yet and further work is required to fully comprehend these complex behaviors in these types of ceramics.

Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures

We introduce an innovative specimen preparation method employing the selectivity of a wet-chemical etching step to improve data quality and success rates in the atom probe analysis of contemporary semiconductor devices. Firstly, on the example of an SiGe fin embedded in SiO₂ we demonstrate how the selective removal of SiO₂ from the final APT specimen significantly improves accuracy and reliability of the reconstructed data. With the oxide removal, we eliminate the origin of shape artefacts, i.e. the formation of a non-hemispherical tip shape, that are typically observed in the reconstructed volume of complex systems. Secondly, using the same approach, we increase success rates to ∼90% for the damage-free, 3D site-specific localization of short (250 nm), vertical Si nanowires at the specimen apex. The impact of the abrupt emitter radius change that is introduced by this specimen preparation method is evaluated as being minor using field evaporation simulation and comparison of different reconstruction schemes. The Ge content within the SiGe fin as well as the 3D boron distribution in the Si NW as resolved by atom probe analysis are in good agreement with TEM/EDS and ToF-SIMS analysis, respectively.

Optical Contactless Measurement of Electric Field-Induced Tensile Stress in Diamond Nanoscale Needles

The application of a high electrostatic field at the apex of monocrystalline diamond nanoscale needles induces an energy splitting of the photoluminescence lines of color centers. In particular, the splitting of the zero-phonon line of the neutral nitrogen-vacancy complex (NV⁰) has been studied within a laser-assisted tomographic atom probe equipped with an in situ microphotoluminescence bench. The measured quadratic dependence of the energy splitting on the applied voltage corresponds to the stress generated on the metal-like apex surface by the electrostatic field. Tensile stress up to 7 GPa has thus been measured in the proximity of the needle apex. Furthermore, the stress scales along the needle shank inversely proportionally to its axial cross section. We demonstrate thus a method for contactless piezo-spectroscopy of nanoscale systems by electrostatic field regulation for the study of their mechanical properties. These results also provide an experimental confirmation to the models of dielectrics surface metallization under high electrostatic field.

Field-Dependent Measurement of GaAs Composition by Atom Probe Tomography

The composition of GaAs measured by laser-assisted atom probe tomography may be inaccurate depending on the experimental conditions. In this work, we assess the role of the DC field and the impinging laser energy on such compositional bias. The DC field is found to have a major influence, while the laser energy has a weaker one within the range of parameters explored. The atomic fraction of Ga may vary from 0.55 at low-field conditions to 0.35 at high field. These results have been interpreted in terms of preferential evaporation of Ga at high field. The deficit of As is most likely explained by the formation of neutral As complexes either by direct ejection from the tip surface or upon the dissociation of large clusters. The study of multiple detection events supports this interpretation.

Systematic approaches for targeting an atom-probe tomography sample fabricated in a thin TEM specimen: Correlative structural, chemical and 3-D reconstruction analyses

Atom-probe tomography (APT) is a unique analysis tool that enables true three-dimensional (3-D) analyses with sub-nano scale spatial resolution. Recent implementations of the local-electrode atom-probe (LEAP) tomograph with ultraviolet laser pulsing have significantly expanded the research applications of APT. The small field-of-view of a needle-shaped specimen with a less than 100 nm diam. is, however, a major limitation for analyzing materials. The systematic approaches for site-specific targeting of an APT nanotip in a transmission electron microscope (TEM) of a thin sample are introduced to solve the geometrical limitations of a sharpened APT nanotip. In addition to "coupling APT to TEM", the technique presented here allows for targeting the preparation of an APT tip based on TEM observation of a much larger area than what is captured in the APT tip. The correlative methods have synergies for not only high-resolution structural analyses but also for obtaining chemical information. Chemical analyses in a TEM, both energy-dispersive X-ray spectroscopy (EDS) and electron energy-loss spectroscopy (EELS), are performed and compared with the APT chemical analyses of a carbide phase (M₇C₃) precipitate at a grain boundary in a Ni-based alloy. Additionally, a TEM image of a sharpened APT nanotip is utilized for calculation of the detection area ratio of an APT nanotip by comparison with a TEM image for precise tomographic reconstructions. A grain-boundary/carbide precipitate triple junction is used to attain precise positioning of an APT nanotip in an analyzed TEM specimen.

Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended.