1
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Kwon DS, Bizindavyi J, De G, Belmonte A, Delabie A, Nyns L, Kar GS, Van Houdt J, Popovici MI. Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39056583 DOI: 10.1021/acsami.4c08988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2024]
Abstract
In this work, the impact of a tungsten oxide (WO3) seed and capping layer for ferroelectric La-doped (Hf, Zr)O2 (La:HZO) based capacitors, designed with back-end-of-line (BEOL) compatibility, is systematically investigated. The WO3 capping layer supplies oxygen to the La:HZO layer throughout the fabrication process and during device cycling. This facilitates the annihilation of oxygen vacancies (Vo) within the La:HZO layer, thereby stabilizing its ferroelectric orthorhombic phase and resulting in an increase of the remanent polarization (Pr) value in the capacitor. Moreover, the effectiveness of the WO3 capping layer depends on the seed layer of the HZO film, suggesting that proper combination of the seed and capping layers should be employed to maximize the ferroelectric response. Finally, a TiN/TiO2 seed layer/La:HZO/WO3 capping layer/TiN capacitor is successfully fabricated and optimized by a complete set of atomic layer deposition (ALD) processes, achieving a superior 2Pr value and endurance value of more than 109 cycles at an electric field of 2.5 MV/cm. The WO3 capping layer is anticipated to offer a viable solution for doped HZO capacitors with reduced thickness, addressing the challenge of elevated Vo levels that favor the tetragonal phase and result in low 2Pr values.
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Affiliation(s)
| | | | - Gourab De
- imec, Kapeldreef 75, 3001 Leuven, Belgium
- KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium
| | | | - Annelies Delabie
- imec, Kapeldreef 75, 3001 Leuven, Belgium
- KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium
| | - Laura Nyns
- imec, Kapeldreef 75, 3001 Leuven, Belgium
| | | | - Jan Van Houdt
- imec, Kapeldreef 75, 3001 Leuven, Belgium
- KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium
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2
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Xiao Y, Yang L, Jiang Y, Liu S, Li G, Ouyang J, Tang M. Improving the ferroelectric properties of Lu doped Hf 0.5Zr 0.5O 2thin films by capping a CeO xlayer. NANOTECHNOLOGY 2024; 35:385705. [PMID: 38925105 DOI: 10.1088/1361-6528/ad5bee] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2024] [Accepted: 06/26/2024] [Indexed: 06/28/2024]
Abstract
Lu doped Hf0.5Zr0.5O2(HZO) ferroelectric films were prepared on Pt/TiN/SiO2/Si substrate by chemical solution deposition method, and an interfacial engineering strategy for improving the ferroelectric property was explored by capping the Lu doped HZO films with a cerium oxide layer. Compared with the Lu doped HZO film without the CeOxcoating layer, the Lu doped HZO film with the CeOxcoating layer has a larger remanent polarization (2Pr= 34.72µC cm-2) and presents weaker wake-up behavior, which result from the higher orthogonal phase ratio and the lower oxygen vacancy of the CeOxcoated Lu doped HZO film. In addition, the CeOxcoating can remarkably improve the fatigue resistance and retention performance of the Lu doped HZO films. It is hoped that the results can provide an effective approach for the realization of high-performance and highly reliable hafnium oxide based ferroelectric thin films.
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Affiliation(s)
- Yongguang Xiao
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - Lisha Yang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - Yong Jiang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - Siwei Liu
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - Gang Li
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
| | - Jun Ouyang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
- Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, Shandong, People's Republic of China
| | - Minghua Tang
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, People's Republic of China
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3
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Zakusylo T, Quintana A, Lenzi V, Silva JPB, Marques L, Yano JLO, Lyu J, Sort J, Sánchez F, Fina I. Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf 0.5Zr 0.5O 2 and Co. MATERIALS HORIZONS 2024; 11:2388-2396. [PMID: 38441222 PMCID: PMC11104484 DOI: 10.1039/d3mh01966g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Accepted: 02/27/2024] [Indexed: 05/21/2024]
Abstract
Magnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/ferromagnetic coupled films, are promising candidates for energy efficient memory computing. However, most of the multiferroic magnetoelectric systems studied so far are based on materials that are not compatible with industrial processes. Doped hafnia is emerging as one of the few CMOS-compatible ferroelectric materials. Thus, it is highly relevant to study the integration of ferroelectric hafnia into multiferroic systems. In particular, ferroelectricity in hafnia, and the eventual magnetoelectric coupling when ferromagnetic layers are grown atop of it, are very much dependent on quality of interfaces. Since magnetic metals frequently exhibit noticeable reactivity when grown onto oxides, it is expected that ferroelectricity and magnetoelectricity might be reduced in multiferroic hafnia-based structures. In this article, we present excellent ferroelectric endurance and retention in epitaxial Hf0.5Zr0.5O2 films grown on buffered silicon using Co as the top electrode. The crucial influence of a thin Pt capping layer grown on top of Co on the ferroelectric functional characteristics is revealed by contrasting the utilization of Pt-capped Co, non-capped Co and Pt. Magnetic control of the imprint electric field (up to 40% modulation) is achieved in Pt-capped Co/Hf0.5Zr0.5O2 structures, although this does not lead to appreciable tuning of the ferroelectric polarization, as a result of its high stability. Computation of piezoelectric and flexoelectric strain-mediated mechanisms of the observed magnetoelectric coupling reveal that flexoelectric contributions are likely to be at the origin of the large imprint electric field variation.
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Affiliation(s)
- Tetiana Zakusylo
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Alberto Quintana
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Veniero Lenzi
- CICECO - Aveiro Institute of Materials, Department of Chemistry, University of Aveiro, Aveiro 3810-193, Portugal
| | - José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga 4710-057, Portugal
| | - Luís Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga 4710-057, Portugal
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga 4710-057, Portugal
| | - José Luís Ortolá Yano
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Jike Lyu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Jordi Sort
- Departament de Física, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona 08010, Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
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4
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Kévin AL, Damien D, Brice G. Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks. NANOSCALE ADVANCES 2024; 6:2350-2362. [PMID: 38694469 PMCID: PMC11059552 DOI: 10.1039/d3na01115a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Accepted: 03/18/2024] [Indexed: 05/04/2024]
Abstract
Polycrystalline hafnium oxide emerges as a promising material for the future of nanoelectronic devices. While phase-field modeling stands as a primary choice tool for forecasting domain structure evolution and electromechanical properties of ferroelectric materials, it suffers from a high computational cost, which impedes its applicability to real-size systems. Here, we propose a Graph Neural Network (GNN) machine-learning framework to predict the ferroelectric hysteresis of polycrystalline hafnium oxide, with the goal of significantly accelerating computations in contrast to high-fidelity phase-field methods. By leveraging the inherent graph structure of the polycrystalline system and incorporating edge-level feature properties through graph attentional layers, our approach accurately predicts hysteresis behaviors across a broad range of polycrystalline structures, grain numbers, and Landau coefficients. The GNN framework exhibits high accuracy, with an average relative error of ∼4%, and demonstrates remarkable computational efficiency with respect to ground truth phase-field simulations, offering speed-ups exceeding a million-fold. Furthermore, we showcase the transferability of our model to efficiently scale predictions in polycrystals comprising up to a thousand grains, paving the way for effective simulations of real-sized systems. Our approach, by overcoming computational limitations in polycrystalline hafnium oxide, opens doors for accelerating discovery and design in ferroelectric materials.
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Affiliation(s)
- Alhada-Lahbabi Kévin
- INSA Lyon, Ecole Centrale de Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 69622 Villeurbanne France
| | - Deleruyelle Damien
- INSA Lyon, Ecole Centrale de Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 69622 Villeurbanne France
| | - Gautier Brice
- INSA Lyon, Ecole Centrale de Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 69622 Villeurbanne France
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5
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Choi H, Cho YH, Kim SH, Yang K, Park MH. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry. J Phys Chem Lett 2024; 15:983-997. [PMID: 38252652 DOI: 10.1021/acs.jpclett.3c03363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of achieving high endurance and high write/read speed and the optimal material properties to achieve them are discussed. In DRAM applications, the trade-off between remanent polarization (Pr), endurance, and operation speed is highlighted, focusing on reducing the critical material property Ec (coercive field). Novel phase formation and interfacial redox chemistry are reviewed as potential game-changers for ferroelectric memories. Regarding Flash operation, the need for an ideal Pr and Ec ratio is emphasized, as excessive Pr can lead to charge trapping, resulting in fatigue and pass disturbance in the NAND array. Achieving the right balance of Pr and Ec for ferroelectric NAND with hafnia-based ferroelectrics remains challenging. This Perspective also recognizes technical advancements in FeFET technology, offering potential solutions for improved performance and casting a positive outlook on the future of ferroelectric memory technology.
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Affiliation(s)
- Hyojun Choi
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Yong Hyeon Cho
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Se Hyun Kim
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Min Hyuk Park
- Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
- Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea
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6
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Kang M, Peng Y, Xiao W, Zhang Y, Wang Z, Du P, Jiang H, Liu F, Liu Y, Hao Y, Han G. HfO 2-ZrO 2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2954-2963. [PMID: 38166401 DOI: 10.1021/acsami.3c15732] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
HfO2-ZrO2 ferroelectric films have recently gained considerable attention from integrated circuit researchers due to their excellent ferroelectric properties over a wide doping range and low deposition temperature. In this work, different HfO2-ZrO2 superlattice (SL) FE films with varying periodicity of HfO2 (5 cycles)-ZrO2 (5 cycles) (SL5), HfO2 (10 cycles)-ZrO2 (10 cycles) (SL10), and HfO2 (15 cycles)-ZrO2 (15 cycles) (SL15) were studied systematically. The HfZrOx (HZO) alloy was used as a comparison device. The SL5 film demonstrated improved ferroelectric properties compared to the HZO film, with the 2 times remnant polarization (2Pr) values increasing from 41.4 to 48.6 μC/cm2 at an applied voltage of 3 V/10 kHz. Furthermore, the first-order reversal curve diagrams of different SL and HZO capacitors at different states (initial, wake-up, fatigue, and recovery) were measured. The SL capacitors were found to effectively suppress the diffusion of defects during P-V cycling, resulting in improved fatigue stability characteristics and fatigue recovery capability compared to the HZO capacitor. Moreover, an improved switching speed of the SL films compared to the HZO capacitor was concluded based on the inhomogeneous field mechanism (IFM) model. These results indicate that the SL structure has a high potential in future high-speed ferroelectric memory applications with excellent stability and recovery capability.
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Affiliation(s)
- Mingshuang Kang
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yue Peng
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Wenwu Xiao
- School of Microelectronics, Xidian University, Xi'an 710071, China
- Xi'an UniIC Semiconductors Co., Ltd., Xi'an 710075, China
| | - Yueyuan Zhang
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Zhe Wang
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Peiyuan Du
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Hao Jiang
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Fenning Liu
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yan Liu
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Yue Hao
- School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Genquan Han
- School of Microelectronics, Xidian University, Xi'an 710071, China
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7
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Kumar M, Park J, Kim J, Seo H. Room-Temperature Quantum Diodes with Dynamic Memory for Neural Logic Operations. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56003-56013. [PMID: 37992323 DOI: 10.1021/acsami.3c13031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2023]
Abstract
The pursuit of high-performance, next-generation nanoelectronics is fundamentally reliant on exploiting quantum phenomena such as tunneling at room temperature. However, quantum tunneling and memory dynamics are governed by two conflicting parameters: the presence or absence of defects. Therefore, the integration of both attributes within a single device presents substantial challenges. Nevertheless, successful integration has the potential to prompt crucial breakthroughs by emulating biobrain-like dynamics, in turn enabling sophisticated in-material neural logic operations. In this work, we demonstrate that a conformal nanolaminate HfO2/ZrO2 structure on silicon enables high-performing (>106 s) Fowler-Nordheim tunneling at room temperature. In addition, the device exhibits unipolar dynamic hysteresis loop opening (on/off ratio >102) with high endurance (>104 cycles) along with negative differential resistance, which is attributed to the collective ferroelectric and capacitive effects and is utilized to emulate synaptic functions. Further, proof-of-concept logic gates based on voltage-dependent plasticity and time-domain were developed using a single device, offering in-material neural-like data processing. These findings pave the way for the realization of high-performing and scalability tunneling devices in advanced nanoelectronics, which mark a promising route toward the development of next-generation, fundamental neural logic computing systems.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Jiyeong Park
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Junmo Kim
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
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8
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Wang Y, Tao L, Guzman R, Luo Q, Zhou W, Yang Y, Wei Y, Liu Y, Jiang P, Chen Y, Lv S, Ding Y, Wei W, Gong T, Wang Y, Liu Q, Du S, Liu M. A stable rhombohedral phase in ferroelectric Hf(Zr) 1+xO 2 capacitor with ultralow coercive field. Science 2023; 381:558-563. [PMID: 37535726 DOI: 10.1126/science.adf6137] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Accepted: 06/22/2023] [Indexed: 08/05/2023]
Abstract
Hafnium oxide-based ferroelectric materials are promising candidates for next-generation nanoscale devices because of their ability to integrate into silicon electronics. However, the intrinsic high coercive field of the fluorite-structure oxide ferroelectric devices leads to incompatible operating voltage and limited endurance performance. We discovered a complementary metal-oxide semiconductor (CMOS)-compatible rhombohedral ferroelectric Hf(Zr)1+xO2 material rich in hafnium-zirconium [Hf(Zr)]. X-ray diffraction combined with scanning transmission electron microscopy reveals that the excess Hf(Zr) atoms intercalate within the hollow sites. We found that the intercalated atoms expand the lattice and increase the in-plane and out-of-plane stresses, which stabilize both the rhombohedral phase (r-phase) and its ferroelectric properties. Our ferroelectric devices, which are based on the r-phase Hf(Zr)1+xO2, exhibit an ultralow coercive field (~0.65 megavolts per centimeter). Moreover, we achieved a high endurance of more than 1012 cycles at saturation polarization. This material discovery may help to realize low-cost and long-life memory chips.
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Affiliation(s)
- Yuan Wang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Lei Tao
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Roger Guzman
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Qing Luo
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Yang Yang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yingfen Wei
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Yu Liu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Pengfei Jiang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yuting Chen
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Shuxian Lv
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yaxin Ding
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Wei Wei
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Tiancheng Gong
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Yan Wang
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Qi Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Shixuan Du
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Ming Liu
- State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
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9
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Oh Y, Lee SW, Choi JH, Ahn SE, Kim HB, Ahn JH. Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf 1-xZr xO 2 Thin Films via Atomic Layer Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2187. [PMID: 37570505 PMCID: PMC10421259 DOI: 10.3390/nano13152187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Revised: 07/18/2023] [Accepted: 07/25/2023] [Indexed: 08/13/2023]
Abstract
Hf1-xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low concentrations. While doping with Y improves the ferroelectric properties, there has been limited research on Y-HZO thin films fabricated using atomic layer deposition (ALD). In this study, we investigated the effects of Y-doping cycles on the ferroelectric and electrical properties of as-deposited Y-HZO thin films with varying compositions fabricated through ALD. The Y-HZO thin films were stably crystallized without the need for post-thermal treatment and exhibited transition behavior depending on the Y-doping cycle and initial composition ratio of the HZO thin films. These Y-HZO thin films offer several advantages, including enhanced dielectric constant, leakage current density, and improved endurance. Moreover, the optimized Y-doping cycle induced a phase transformation that resulted in Y-HZO thin films with improved ferroelectric properties, exhibiting stable behavior without fatigue for up to 1010 cycles. These as-deposited Y-HZO thin films show promise for applications in semiconductor devices that require high ferroelectric properties, excellent electrical properties, and reliable performance with a low thermal budget.
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Affiliation(s)
- Youkyoung Oh
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea; (Y.O.); (S.W.L.); (J.-H.C.)
| | - Seung Won Lee
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea; (Y.O.); (S.W.L.); (J.-H.C.)
| | - Jeong-Hun Choi
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea; (Y.O.); (S.W.L.); (J.-H.C.)
| | - Seung-Eon Ahn
- Department of Nano & Semiconductor Engineering, Tech University of Korea, Siheung 15073, Republic of Korea;
| | - Hyo-Bae Kim
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea; (Y.O.); (S.W.L.); (J.-H.C.)
| | - Ji-Hoon Ahn
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588, Republic of Korea; (Y.O.); (S.W.L.); (J.-H.C.)
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10
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Liao J, Dai S, Peng RC, Yang J, Zeng B, Liao M, Zhou Y. HfO 2-based ferroelectric thin film and memory device applications in the post-Moore era: A review. FUNDAMENTAL RESEARCH 2023; 3:332-345. [PMID: 38933762 PMCID: PMC11197553 DOI: 10.1016/j.fmre.2023.02.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Revised: 02/11/2023] [Accepted: 02/23/2023] [Indexed: 03/05/2023] Open
Abstract
The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power consumption, fast read/write speed, and high reliability, which are crucial for high-performance computing. Ferroelectric memory has undergone extensive investigation as a viable alternative for commercial applications since the post-Moore era. However, conventional perovskite-structure ferroelectrics (e.g., PbZr x Ti1- x O3) encounter severe limitations for high-density integration owing to the size effect of ferroelectricity and incompatibility with complementary metal-oxide-semiconductor technology. Since 2011, the ferroelectric field has been primarily focused on HfO2-based ferroelectric thin films owing to their exceptional scalability. Several reviews discussing the control of ferroelectricity and device applications exist. It is believed that a comprehensive understanding of mechanisms based on industrial requirements and concerns is necessary, such as the wake-up effect and fatigue mechanism. These mechanisms reflect the atomic structures of the materials as well as the device physics. Herein, a review focusing on phase stability and domain structure is presented. In addition, the recent progress in related ferroelectric memory devices and their challenges is briefly discussed.
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Affiliation(s)
- Jiajia Liao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
| | - Siwei Dai
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
| | - Ren-Ci Peng
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
| | - Jiangheng Yang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
| | - Binjian Zeng
- Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
| | - Min Liao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
| | - Yichun Zhou
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
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11
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Hsain HA, Lee Y, Lancaster S, Lomenzo PD, Xu B, Mikolajick T, Schroeder U, Parsons GN, Jones JL. Reduced fatigue and leakage of ferroelectric TiN/Hf 0.5Zr 0.5O 2/TiN capacitors by thin alumina interlayers at the top or bottom interface. NANOTECHNOLOGY 2023; 34:125703. [PMID: 36538824 DOI: 10.1088/1361-6528/acad0a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Accepted: 12/19/2022] [Indexed: 06/17/2023]
Abstract
Hf0.5Zr0.5O2(HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been fully scaled into industrial applications is due to its deleterious wake-up and fatigue behavior which leads to an inconsistent remanent polarization during cycling. In this study, we explore an interfacial engineering strategy in which we insert 1 nm Al2O3interlayers at either the top or bottom HZO/TiN interface of sequentially deposited metal-ferroelectric-metal capacitors. By inserting an interfacial layer while limiting exposure to the ambient environment, we successfully introduce a protective passivating layer of Al2O3that provides excess oxygen to mitigate vacancy formation at the interface. We report that TiN/HZO/TiN capacitors with a 1 nm Al2O3at the top interface demonstrate a higher remanent polarization (2Pr∼ 42μC cm-2) and endurance limit beyond 108cycles at a cycling field amplitude of 3.5 MV cm-1. We use time-of-flight secondary ion mass spectrometry, energy dispersive spectroscopy, and grazing incidence x-ray diffraction to elucidate the origin of enhanced endurance and leakage properties in capacitors with an inserted 1 nm Al2O3layer. We demonstrate that the use of Al2O3as a passivating dielectric, coupled with sequential ALD fabrication, is an effective means of interfacial engineering and enhances the performance of ferroelectric HZO devices.
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Affiliation(s)
- H Alex Hsain
- Materials Science and Engineering Department, North Carolina State University, 911 Partners Way, Raleigh, NC, 27695 United States of America
- NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany
| | - Younghwan Lee
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | | | | | - Bohan Xu
- NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany
| | - Thomas Mikolajick
- NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany
- TU Dresden, Chair of Nanoelectronics, Noethnitzer Strasse 64a, D-01187 Dresden, Germany
| | - Uwe Schroeder
- NaMLab gGmbH, Noethnitzer Strasse 64a, D-01187 Dresden, Germany
| | - Gregory N Parsons
- Chemical and Biomolecular Engineering Department, North Carolina State University, 911 Partners Way, Raleigh, North Carolina, NC, 27695 United States of America
| | - Jacob L Jones
- Materials Science and Engineering Department, North Carolina State University, 911 Partners Way, Raleigh, NC, 27695 United States of America
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12
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Koroleva A, Chernikova AG, Zarubin SS, Korostylev E, Khakimov RR, Zhuk MY, Markeev AM. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO 2 Insets. ACS OMEGA 2022; 7:47084-47095. [PMID: 36570284 PMCID: PMC9773930 DOI: 10.1021/acsomega.2c06237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Accepted: 11/29/2022] [Indexed: 06/17/2023]
Abstract
The influence of the bottom TiO2 interfacial layer grown by atomic layer deposition on the ferroelectric properties of the TiN/Hf0.5Zr0.5O2/TiN capacitors is systematically investigated. We show that the integration of the TiO2 layer leads to an increase in the polar orthorhombic phase content in the Hf0.5Zr0.5O2 film. In addition, the crystalline structure of the Hf0.5Zr0.5O2 film is highly dependent on the thickness of the TiO2 inset, with monoclinic phase stabilization after the increase of TiO2 thickness. Special attention in this work is given to the key reliability parameters-retention and endurance. We demonstrate that the integration of the TiO2 inset induces valuable retention improvement. Using a novel approach to the depolarization measurements, we show that the depolarization contribution to the retention loss is insignificant, which leaves the imprint effect as the root of the retention loss in TiN/TiO2/Hf0.5Zr0.5O2/TiN devices. We believe that the integration of the insulator interfacial layer suppresses the scavenging effect from the bottom TiN electrode, leading to a decrease in the oxygen vacancy content in the Hf0.5Zr0.5O2 film, which is the main reason for imprint mitigation. At the same time, although the observed retention improvement is very promising for the upcoming technological integration, the field cycling testing revealed the endurance limitations linked to the phase transitions in the TiO2 layer and the rise of the effective electric field applied to the Hf0.5Zr0.5O2 film.
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13
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Kim BH, Kuk SH, Kim SK, Kim JP, Geum DM, Baek SH, Kim SH. Oxygen scavenging of HfZrO 2-based capacitors for improving ferroelectric properties. NANOSCALE ADVANCES 2022; 4:4114-4121. [PMID: 36285215 PMCID: PMC9514567 DOI: 10.1039/d2na00533f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Accepted: 08/13/2022] [Indexed: 06/16/2023]
Abstract
HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage (V sw), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrO x -based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. V sw of a capacitor with scavenging decreased by 18% and the same P r could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 106 cycles were achieved. We believe oxygen scavenging has great potential for future HfZrO x -based memory device applications.
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Affiliation(s)
- Bong Ho Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea
| | - Song-Hyeon Kuk
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea
| | - Seong Kwang Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea
| | - Joon Pyo Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea
| | - Dae-Myeong Geum
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea
| | - Seung-Hyub Baek
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST) 02792 Seoul Republic of Korea
| | - Sang Hyeon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea
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14
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Zabrosaev IV, Kozodaev MG, Romanov RI, Chernikova AG, Mishra P, Doroshina NV, Arsenin AV, Volkov VS, Koroleva AA, Markeev AM. Field-Effect Transistor Based on 2D Microcrystalline MoS 2 Film Grown by Sulfurization of Atomically Layer Deposited MoO 3. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3262. [PMID: 36234390 PMCID: PMC9565359 DOI: 10.3390/nano12193262] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 09/08/2022] [Accepted: 09/16/2022] [Indexed: 06/16/2023]
Abstract
Atomically thin molybdenum disulfide (MoS2) is a promising channel material for next-generation thin-body field-effect transistors (FETs), which makes the development of methods allowing for its controllable synthesis over a large area an essential task. Currently, one of the cost-effective ways of its synthesis is the sulfurization of preliminary grown oxide- or metallic film. However, despite apparent progress in this field, the electronic quality of the obtained MoS2 is inferior to that of exfoliated samples, making the detailed investigation of the sulfurized films' properties of great interest. In this work, we synthesized continuous MoS2 films with a thickness of ≈2.2 nm via the sulfurization of an atomic-layer-deposited MoO3 layer. X-ray photoelectron spectroscopy, transmission electron microscopy, and Raman spectroscopy indicated the appropriate chemical composition and microcrystalline structure of the obtained MoS2 films. The semiconductor quality of the synthesized films was confirmed by the fabrication of a field-effect transistor (FET) with an Ion/Ioff ratio of ≈40, which was limited primarily by the high contact resistance. The Schottky barrier height at the Au/MoS2 interface was found to be ≈1.2 eV indicating the necessity of careful contact engineering. Due to its simplicity and cost-effectiveness, such a technique of MoS2 synthesis still appears to be highly attractive for its applications in next-generation microelectronics. Therefore, further research of the electronic properties of films obtained via this technique is required.
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Affiliation(s)
- Ivan V. Zabrosaev
- Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia
| | - Maxim G. Kozodaev
- Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia
| | - Roman I. Romanov
- Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia
| | - Anna G. Chernikova
- Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia
| | - Prabhash Mishra
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, Russia
- Center for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi 110025, India
| | - Natalia V. Doroshina
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, Russia
| | - Aleksey V. Arsenin
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, Russia
| | - Valentyn S. Volkov
- Center for Photonics & 2D Materials, Moscow Institute of Physics and Technology, National Research University, 141700 Dolgoprudny, Russia
| | - Alexandra A. Koroleva
- Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia
| | - Andrey M. Markeev
- Moscow Institute of Physics and Technology, National Research University, Institutskii per. 9, 141701 Dolgoprudny, Russia
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15
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Khakimov RR, Chernikova AG, Koroleva AA, Markeev AM. On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3059. [PMID: 36080096 PMCID: PMC9459922 DOI: 10.3390/nano12173059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 08/31/2022] [Accepted: 09/01/2022] [Indexed: 06/15/2023]
Abstract
Despite the great potential of Hf0.5Zr0.5O2 (HZO) ferroelectrics, reliability issues, such as wake-up, fatigue, endurance limitations, imprint and retention loss, impede the implementation of HZO to nonvolatile memory devices. Herein, a study of the reliability properties in HZO-based stacks with the conventional TiN top electrode and Ru electrode, which is considered a promising alternative to TiN, is performed. An attempt to distinguish the mechanisms underlying the wake-up, fatigue and retention loss in both kinds of stacks is undertaken. Overall, both stacks show pronounced wake-up and retention loss. Moreover, the fatigue and retention loss were found to be worsened by Ru implementation. The huge fatigue was suggested to be because Ru does not protect HZO against oxygen vacancies generation during prolonged cycling. The vacancies generated in the presence of Ru are most likely deeper traps, as compared to the traps formed at the interface with the TiN electrode. Implementing the new procedure, which can separate the depolarization-caused retention loss from the imprint-caused one, reveal a rise in the depolarization contribution with Ru implementation, accompanied by the maintenance of similarly high imprint, as in the case with the TiN electrode. Results show that the mechanisms behind the reliability issues in HZO-based capacitors are very electrode dependent and simple approaches to replacing the TiN electrode with the one providing, for example, just higher remnant polarization or lower leakages, become irrelevant on closer examination.
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16
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Shin W, Yim J, Bae JH, Lee JK, Hong S, Kim J, Jeong Y, Kwon D, Koo RH, Jung G, Han C, Kim J, Park BG, Kwon D, Lee JH. Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization. MATERIALS HORIZONS 2022; 9:1623-1630. [PMID: 35485256 DOI: 10.1039/d2mh00340f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Gaseous pollutants, including nitrogen oxides, pose a severe threat to ecosystems and human health; therefore, developing reliable gas-sensing systems to detect them is becoming increasingly important. Among the various options, metal-oxide-based gas sensors have attracted attention due to their capability for real-time monitoring and large response. In particular, in the field of materials science, there has been extensive research into controlling the morphological properties of metal oxides. However, these approaches have limitations in terms of controlling the response, sensitivity, and selectivity after the sensing material is deposited. In this study, we propose a novel method to improve the gas-sensing performance by utilizing the remnant polarization of ferroelectric thin-film transistor (FeTFT) gas sensors. The proposed FeTFT gas sensor has IGZO and HZO as the conducting channel and ferroelectric layer, respectively. It is demonstrated that the response and sensitivity of FeTFT gas sensors can be modulated by engineering the polarization of the ferroelectric layer. The amount of reaction sites in IGZO, including electrons and oxygen vacancy-induced negatively charged oxygen, is changed depending on upward and downward polarization. The results of this study provide an essential foundation for further development of gas sensors with tunable sensing properties.
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Affiliation(s)
- Wonjun Shin
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Jiyong Yim
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Jong-Ho Bae
- School of Electrical Engineering, Kookmin University, Seoul 02707, Korea
| | - Jung-Kyu Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Seongbin Hong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Jaehyeon Kim
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yujeong Jeong
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Dongseok Kwon
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Ryun-Han Koo
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Gyuweon Jung
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Changhyeon Han
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Jeonghan Kim
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Byung-Gook Park
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
| | - Daewoong Kwon
- Department of Electrical Engineering, Inha University, Incheon, Korea.
| | - Jong-Ho Lee
- Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea.
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17
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Banerjee W, Kashir A, Kamba S. Hafnium Oxide (HfO 2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107575. [PMID: 35510954 DOI: 10.1002/smll.202107575] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2 -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
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Affiliation(s)
- Writam Banerjee
- Center for Single Atom-based Semiconductor Device, Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Alireza Kashir
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
| | - Stanislav Kamba
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
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18
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Ali F, Abbas A, Wu G, Daaim M, Akhtar A, Kim KH, Yang B. Novel Fluorite-Structured Materials for Solid-State Refrigeration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200133. [PMID: 35445535 DOI: 10.1002/smll.202200133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Revised: 02/24/2022] [Indexed: 06/14/2023]
Abstract
Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite-based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field-effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite-based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal-oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite-based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO2 - and HfO2 -based materials (e.g., relative to conventional perovskite- and polymer-based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.
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Affiliation(s)
- Faizan Ali
- School of Information and Intelligence Engineering, University of Sanya, Sanya, 572022, P. R. China
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Akmal Abbas
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Guoyi Wu
- Institute of Earthquake Engineering, Faculty of Infrastructure Engineering, Dalian University of Technology, Dalian, Liaoning, 116024, China
| | - Muhammad Daaim
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Awais Akhtar
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Ki-Hyun Kim
- Department of Civil and Environmental Engineering, Hanyang University, 222 Wangsimni-Ro, Seoul, 04763, Republic of Korea
| | - Boxiong Yang
- School of Information and Intelligence Engineering, University of Sanya, Sanya, 572022, P. R. China
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19
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Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf 0.5Zr 0.5O 2. NANOMATERIALS 2022; 12:nano12091483. [PMID: 35564195 PMCID: PMC9103790 DOI: 10.3390/nano12091483] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Revised: 04/14/2022] [Accepted: 04/20/2022] [Indexed: 02/04/2023]
Abstract
Ferroelectric hafnium oxide thin films—the most promising materials in microelectronics’ non-volatile memory—exhibit both unconventional ferroelectricity and unconventional piezoelectricity. Their exact origin remains controversial, and the relationship between ferroelectric and piezoelectric properties remains unclear. We introduce a new method to investigate this issue, which consists in a local controlled modification of the ferroelectric and piezoelectric properties within a single Hf0.5Zr0.5O2 capacitor device through local doping and a further comparative nanoscopic analysis of the modified regions. By comparing the ferroelectric properties of Ga-doped Hf0.5Zr0.5O2 thin films with the results of piezoresponse force microscopy and their simulation, as well as with the results of in situ synchrotron X-ray microdiffractometry, we demonstrate that, depending on the doping concentration, ferroelectric Hf0.5Zr0.5O2 has either a negative or a positive longitudinal piezoelectric coefficient, and its maximal value is −0.3 pm/V. This is several hundreds or thousands of times less than those of classical ferroelectrics. These changes in piezoelectric properties are accompanied by either improved or decreased remnant polarization, as well as partial or complete domain switching. We conclude that various ferroelectric and piezoelectric properties, and the relationships between them, can be designed for Hf0.5Zr0.5O2 via oxygen vacancies and mechanical-strain engineering, e.g., by doping ferroelectric films.
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20
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Kim H, Kashir A, Jang H, Oh S, Yadav M, Lee S, Hwang H. Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device. NANO EXPRESS 2022. [DOI: 10.1088/2632-959x/ac5be5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Abstract
Hf0.5Zr0.5O2 (HZO) is an appropriate material for the back-end-of-line (BEOL) process in fabricating ferroelectric TiN/HZO/TiN devices because of its excellent conformality on 3-D nanostructures and a suitable crystallization temperature (≥ 350–400 °C). However, in the semiconductor industry, the depositiontemperature ofTiN isusually higher than 400 °C. Therefore, it is necessary to study the ferroelectric properties of TiN/HZO/TiN devices when the deposition temperature of the TiN top electrode is higher than the HZO film crystallization temperature. In this study, 10-nm-thick TiN top electrodes were deposited at various temperatures on the HZO thin film to investigate the impact of the TiN deposition temperature on the structural features and ferroelectric properties of TiN/HZO/TiN capacitors. Only the sample capped with a TiN top electrode deposited at 400 °C showed ferroelectric properties without subsequent annealing (in situ crystallization). However, this sampleexhibitedan approximately40% reduction inthepolarization value compared with the other samples that were crystallized after the annealing process. This behavior can be ascribed to the formation of a monoclinic nonpolar phase. To prevent the degradation of the polarization value and suppress the formation of the m-phase in the in situ crystallized HZO thin film, a two-step TiN deposition method was carried out. The sample was fabricated by depositing a 5-nm-thick TiN top electrode at room temperature followed by the deposition of a 5-nm-thick TiN layer at 400 °C, which resulted in strong ferroelectric properties comparable to those of the samples capped with TiN grown at relatively low temperatures (room temperature, 200 °C, and 300 °C). These findings can adequately explain the role of the capping layer in achieving the ferroelectric phase, which is closely related not only during the cooling step of any thermal process but also during the heating and crystallization steps.
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21
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Song T, Tan H, Bachelet R, Saint-Girons G, Fina I, Sánchez F. Impact of La Concentration on Ferroelectricity of La-Doped HfO 2 Epitaxial Thin Films. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:4809-4816. [PMID: 34841249 PMCID: PMC8613842 DOI: 10.1021/acsaelm.1c00672] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films.
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Affiliation(s)
- Tingfeng Song
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Huan Tan
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Romain Bachelet
- Univ.
Lyon, Ecole Centrale de Lyon, INSA Lyon, CPE Lyon, CNRS, Institut
des Nanotechnologies de Lyon - INL, UMR5270, Université Claude Bernard Lyon 1, 69134 Ecully, France
| | - Guillaume Saint-Girons
- Univ.
Lyon, Ecole Centrale de Lyon, INSA Lyon, CPE Lyon, CNRS, Institut
des Nanotechnologies de Lyon - INL, UMR5270, Université Claude Bernard Lyon 1, 69134 Ecully, France
| | - Ignasi Fina
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Florencio Sánchez
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
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22
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Silva JPB, Negrea RF, Istrate MC, Dutta S, Aramberri H, Íñiguez J, Figueiras FG, Ghica C, Sekhar KC, Kholkin AL. Wake-up Free Ferroelectric Rhombohedral Phase in Epitaxially Strained ZrO 2 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:51383-51392. [PMID: 34694130 DOI: 10.1021/acsami.1c15875] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because of their unexpected ferroelectric behavior at the nanoscale, which enables the downscaling of ferroelectric devices. The present work reports an unprecedented ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown directly on (111)-Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal (111)-oriented ZrO2 films under epitaxial compressive strain exhibiting switchable ferroelectric polarization of about 20.2 μC/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time-dependent polarization reversal characteristics of Nb:SrTiO3/ZrO2/Au film capacitors exhibit typical bell-shaped curve features associated with the ferroelectric domain reversal and agree well with the nucleation limited switching (NLS) model. The polarization-electric field hysteresis loops point to an activation field comparable to the coercive field. Interestingly, the studied films show ferroelectric behavior per se, without the need to apply the wake-up cycle found in the orthorhombic phase of ZrO2. Overall, the rhombohedral ferroelectric ZrO2 films present technological advantages over the previously studied zirconia- and hafnia-based thin films and may be attractive for nanoscale ferroelectric devices.
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Affiliation(s)
- José P B Silva
- Centre of Physics of Minho and Porto Universities (CF-UM-UP), Campus de Gualtar, Braga 4710-057, Portugal
| | - Raluca F Negrea
- National Institute of Materials Physics, 105 bisAtomistilor, Magurele 077125, Romania
- BCAST, Brunel University London, Uxbridge, Middlesex UB8 3PH, United Kingdom
| | - Marian C Istrate
- National Institute of Materials Physics, 105 bisAtomistilor, Magurele 077125, Romania
| | - Sangita Dutta
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxemburg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, Belvaux L-4422, Luxembourg
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxemburg
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux, Esch/Alzette L-4362, Luxemburg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, Belvaux L-4422, Luxembourg
| | - Fábio G Figueiras
- IFIMUP & Department of Physics and Astronomy, Sciences Faculty, University of Porto, Rua do Campo Alegre, 687, Porto 4169-007, Portugal
| | - Corneliu Ghica
- National Institute of Materials Physics, 105 bisAtomistilor, Magurele 077125, Romania
| | - Koppole C Sekhar
- Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 610 101, India
| | - Andrei L Kholkin
- Department of Physics, CICECO-Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
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23
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Chae K, Kummel AC, Cho K. Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices. NANOSCALE ADVANCES 2021; 3:4750-4755. [PMID: 36134312 PMCID: PMC9418924 DOI: 10.1039/d1na00230a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 08/09/2021] [Accepted: 06/24/2021] [Indexed: 06/15/2023]
Abstract
Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxide stack models for both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the ferroelectric interfaces with metals and semiconductors and the effects of thickness scaling of FE and DE layers were investigated using atomic stack models. A high internal field is induced in the FE and DE layers by the FE polarization field which can promote defect generation leading to limited endurance. It is also shown that device operation will be adversely affected by too thick DE interlayers due to high operating voltage. These DFT models elucidate the underlying mechanisms of the lower endurance in experimental MIS devices compared to MIM devices and provide insights into the fundamental mechanisms at the interfaces.
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Affiliation(s)
- Kisung Chae
- Department of Chemistry and Biochemistry, University of California San Diego La Jolla CA USA
- Department of Materials Science and Engineering, The University of Texas at Dallas Richardson TX USA
| | - Andrew C Kummel
- Department of Chemistry and Biochemistry, University of California San Diego La Jolla CA USA
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas Richardson TX USA
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24
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Yuan ZL, Sun Y, Wang D, Chen KQ, Tang LM. A review of ultra-thin ferroelectric films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:403003. [PMID: 34261050 DOI: 10.1088/1361-648x/ac145c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2021] [Accepted: 07/14/2021] [Indexed: 06/13/2023]
Abstract
Ultrathin ferroelectrics are of great technological interest for high-density electronics, particularly non-volatile memories and field-effect transistors. With the rapid development of micro-electronics technology, there is an urgent requirement for higher density electronic devices, which need ultra-thin ferroelectric materials films. However, as ferroelectric films have becomes thinner and thinner, electrical spontaneous polarization signals have been found in a few atomic layers or even monolayer structures. The mechanisms of detection and formation of these signals are not well understood and various controversial interpretations have emerged. In this review, we summarized the recent research progress in the ultra-thin film ferroelectric material, such as HfO2, CuInP2S6, In2Se3, MoTe2and BaTiO3. Various key aspects of ferroelectric materials are discussed, including crystal structure, ferroelectric mechanism, characterization, fabrication methods, applications, and future outlooks. We hope this review will offer ideas for further improvement of ferroelectric properties of ultra-thin films and promotes practical applications.
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Affiliation(s)
- Zi-Lin Yuan
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Sun
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Dan Wang
- College of Science, Central South University of Forestry and Technology, Changsha 410004, People's Republic of China
- Hunan Province Key Laboratory of Materials Surface & Interface Science and Technology, College of Material Science and Engineering, Central South University of Forestry and Technology, Changsha 410004, People's Republic of China
| | - Ke-Qiu Chen
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li-Ming Tang
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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25
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Chouprik A, Negrov D, Tsymbal EY, Zenkevich A. Defects in ferroelectric HfO 2. NANOSCALE 2021; 13:11635-11678. [PMID: 34190282 DOI: 10.1039/d1nr01260f] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the performance of HfO2-based ferroelectric devices during their life cycle is critically dependent on the presence of point defects as well as structural phase polymorphism, which mainly originates from defects either. The purpose of this review article is to overview the impact of defects in ferroelectric HfO2 on its functional properties and the resulting performance of memory devices. Starting from the brief summary of defects in classical perovskite ferroelectrics, we then introduce the known types of point defects in dielectric HfO2 thin films. Further, we discuss main analytical techniques used to characterize the concentration and distribution of defects in doped ferroelectric HfO2 thin films as well as at their interfaces with electrodes. The main part of the review is devoted to the recent experimental studies reporting the impact of defects in ferroelectric HfO2 structures on the performance of different memory devices. We end up with the summary and perspectives of HfO2-based ferroelectric competitive non-volatile memory devices.
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Affiliation(s)
- Anastasia Chouprik
- Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia.
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26
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Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11094295] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
Abstract
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potential for device application. This paper systematically investigates the effects of tensile stress and annealing temperature on the endurance and ferroelectric properties faced by Zr-doped HfO2 ferroelectric film. The remnant polarization (Pr) shows an increasing trend with annealing temperature, while the change in the coercive electric field (Ec) is not obvious in terms of the relationship with tensile stress or annealing temperature. In addition, the application of tensile stress does help to improve the endurance characteristics by about two orders of magnitude for the ferroelectric material, and the endurance properties show a tendency to be negatively correlated with annealing temperature. Overall, although the effect of stress on the ferroelectricity of a HZO material is not obvious, it has a great influence on its endurance properties and can optimize the endurance of the material, and ferroelectricity exhibits a higher dependence on temperature. The optimization of the endurance properties of HZO materials by stress can facilitate their development and application in future integrated circuit technology.
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27
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Materano M, Lomenzo PD, Kersch A, Park MH, Mikolajick T, Schroeder U. Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00167a] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A review on ferroelectric phase formation and reliability in HfO2-based thin films and semiconductor devices.
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Affiliation(s)
| | | | | | - Min Hyuk Park
- School of Materials Science and Engineering
- Pusan National University
- 46241 Busan
- Republic of Korea
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28
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Lyu J, Song T, Fina I, Sánchez F. High polarization, endurance and retention in sub-5 nm Hf 0.5Zr 0.5O 2 films. NANOSCALE 2020; 12:11280-11287. [PMID: 32420576 DOI: 10.1039/d0nr02204g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ferroelectric HfO2 is a promising material for new memory devices, but significant improvement of its important properties is necessary for practical application. However, previous literature shows that a dilemma exists between polarization, endurance and retention. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 μC cm-2 in the pristine state), endurance (2Pr > 6 μC cm-2 after 1011 cycles) and retention (2Pr > 12 μC cm-2 extrapolated at 10 years) using the same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.
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Affiliation(s)
- Jike Lyu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Tingfeng Song
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
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29
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Kondaiah P, Jagadeesh Chandra S, Fortunato E, Chel Jong C, Mohan Rao G, Koti Reddy DR, Uthanna S. Substrate temperature influenced ZrO
2
films for MOS devices. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6775] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Paruchuri Kondaiah
- Department of Instrumentation and Applied PhysicsIndian Institute of Science Bangalore India
| | - S.V. Jagadeesh Chandra
- Department of Electronics and Communication EngineeringVignan's Institute of Information Technology (A) Visakhapatnam Andhra Pradesh India
- CENIMAT/I3N, Materials Science Department, Faculty of Science and TechnologyNew University of Lisbon Caparica Portugal
| | - Elvira Fortunato
- Departamento de Ciência dos Materiais, CENIMAT/I3N, Faculdade de Ciências eTecnologia (FCT)Universidade Nova de Lisboa Caparica Portugal
| | - Choi Chel Jong
- School of Semiconductor and Chemical Engineering, Semiconductor Physics Research CenterChonbuk National University Jeonju South Korea
| | - G. Mohan Rao
- Department of Instrumentation and Applied PhysicsIndian Institute of Science Bangalore India
| | - D.V. Rama Koti Reddy
- Department of Instrument TechnologyAndhra University Visakhapatnam Andhra Pradesh India
| | - S. Uthanna
- Department of PhysicsSri Venkateswara University Tirupati India
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30
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Apostolov AT, Apostolova IN, Wesselinowa JM. Antiferroelectricity in ZrO<sub>2</sub> and Ferroelectricity in Zr, Al, La Doped HfO<sub>2</sub> Nanoparticles. ACTA ACUST UNITED AC 2020. [DOI: 10.4236/ampc.2020.102003] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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