Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review

Tuning ultrafast time-evolution of photo-induced charge-transfer states: A real-time electronic dynamics study in substituted indenotetracene derivatives

Photo-induced charge transfer (CT) states are pivotal in many technological and biological processes. A deeper knowledge of such states is mandatory for modeling the charge migration dynamics. Real-time time-dependent density functional theory (RT-TD-DFT) electronic dynamics simulations are employed to explicitly observe the electronic density time-evolution upon photo-excitation. Asymmetrically substituted indenotetracene molecules, given their potential application as n-type semiconductors in organic photovoltaic materials, are here investigated. Effects of substituents with different electron-donating characters are analyzed in terms of the overall electronic energy spacing and resulting ultrafast CT dynamics through linear response (LR-)TD-DFT and RT-TD-DFT based approaches. The combination of the computational techniques here employed provided direct access to the electronic density reorganization in time and to its spatial and rational representation in terms of molecular orbital occupation time evolution. Such results can be exploited to design peculiar directional charge dynamics, crucial when photoactive materials are used for light-harvesting applications.

Electron-Sponge Nature of Polyoxometalates for Next-Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices

Designing next-generation molecular devices typically necessitates plentiful oxygen-bearing sites to facilitate multiple-electron transfers. However, the theoretical limits of existing materials for energy conversion and information storage devices make it inevitable to hunt for new competitors. Polyoxometalates (POMs), a unique class of metal-oxide clusters, have been investigated exponentially due to their structural diversity and tunable redox properties. POMs behave as electron-sponges owing to their intrinsic ability of reversible uptake-release of multiple electrons. In this review, numerous POM-frameworks together with desired features of a contender material and inherited properties of POMs are systematically discussed to demonstrate how and why the electron-sponge-like nature of POMs is beneficial to design next-generation water oxidation/reduction electrocatalysts, and neuromorphic nonvolatile resistance-switching random-access memory devices. The aim is to converge the attention of scientists who are working separately on electrocatalysts and memory devices, on a point that, although the application types are different, they all hunt for a material that could exhibit electron-sponge-like feature to realize boosted performances and thus, encouraging the scientists of two completely different fields to explore POMs as imperious contenders to design next-generation nanodevices. Finally, challenges and promising prospects in this research field are also highlighted.

Correlation in Structural Architecture toward Fabrication of Schottky Device with a Series of Pyrazine Appended Coordination Polymers

Energy is the center of importance for the survivability of civilization. Use of fossil fuel is going to be suspended, and renewable energy is technologically costlier. In the quest for new energy sources and to minimize fuel expenditure, the design of energy efficient devices is one of the solutions. Toward this objective, highly delocalized π-acidic N-hetreocycle pyrazine bridged Cd(II)-based coordination polymers (CPs), [Cd(tppz)(adc)(MeOH)] (1), [Cd(tppz)(trep)] (2), and [Cd(tppz)(2,6-ndc)] (3; tppz = 2,3,5,6-tetrakis(2-pyridyl)pyrazine) are synthesized in combination with π-accessible dicarboxylato linkers (acetylene dicarboxylic acid (H2adc), terephthalic acid (H2trep), and 2,6-naphthalene dicarboxylic acid (2,6 H2ndc)). The structures of the compounds, 1-3, have been confirmed by single-crystal X-ray diffraction measurements. Analysis of electrical property demonstrates that light irradiation enhances the conductivity and follows the order 3 > 2 > 1; compound 3 possesses the highest conductivity (1.93 × 10-3 (light), 1.12 × 10-4 S m-1 dark)), than 2 (1.80 × 10-4 (light), 1.10 × 10-4 S m-1 (dark)) and 1 (5.06 × 10-5 (light), 4.72 × 10-5 S m-1 (dark)). This light-induced electrical conductivity can pave the way toward fabrication of an active electronic device by using the discussed materials.

Aqueous processing of organic semiconductors enabled by stable nanoparticles with built-in surfactants

The introduction of oligoether side chains onto a polymer backbone can help to stabilise polymeric dispersions in water without the necessity of surfactants or additives when conjugated polymer nanoparticles are prepared. A series of poly(3-hexylthiophene) (P3HT) derivatives with different content of a polar thiophene derivative 3-((2-methoxyethoxy)methyl)thiophene was interrogated to find the effect of the polar chains on the stability of the formed nanoparticles, as well as their structural, optical, electrochemical, and electrical properties. Findings indicated that incorporation of 10-20 percent of the polar side chain led to particles that are stable over a period of 42 days, with constant particle size and polydispersity, however the particles from the polymer with 30 percent polar side chain showed aggregation effects. The polymer dispersions showed a stronger solid-like behaviour in water with decreasing polar side chain content, while thin film deposition from water was found to afford globular morphologies and crystallites with more isotropic orientation compared to conventional solution-processed films. As a proof-of-principle, field-effect transistors were fabricated directly from the aqueous dispersions demonstrating that polymers with hydrophilic moieties can be processed in water without the requirement of surfactants.

Poly(3-hexylthiophene)-Based Organic Thin-Film Transistors with Virgin Graphene Oxide as an Interfacial Layer

We fabricated and characterized poly(3-hexylthiophene-2, 5-diyl) (P3HT)-based Organic thin-film transistors (OTFTs) containing an interfacial layer made from virgin Graphene Oxide (GO). Previously chemically modified GO and reduced GO (RGO) were used to modify OTFT interfaces. However, to our knowledge, there are no published reports where virgin GO was employed for this purpose. For the sake of comparison, OTFTs without modification were also manufactured. The structure of the devices was based on the Bottom Gate Bottom Contact (BGBC) OTFT. We show that the presence of the GO monolayer on the surface of the OTFT's SiO₂ dielectric and Au electrode surface noticeably improves their performance. Namely, the drain current and the field-effect mobility of OTFTs are considerably increased by modifying the interfaces with the virgin GO deposition. It is suggested that the observed enhancement is connected to a decrease in the contact resistance of GO-covered Au electrodes and the particular structure of the P3HT layer on the dielectric surface. Namely, we found a specific morphology of the organic semiconductor P3HT layer, where larger interconnecting polymer grains are formed on the surface of the GO-modified SiO₂. It is proposed that this specific morphology is formed due to the increased mobility of the P3HT segments near the solid boundary, which was confirmed via Differential Scanning Calorimetry measurements.

MXene based saturation organic vertical photoelectric transistors with low subthreshold swing

Vertical transistors have attracted enormous attention in the next-generation electronic devices due to their high working frequency, low operation voltage and large current density, while a major scientific and technological challenge for high performance vertical transistor is to find suitable source electrode. Herein, an MXene material, Ti₃C₂T_x, is introduced as source electrode of organic vertical transistors. The porous MXene films take the advantage of both partially shielding effect of graphene and the direct modulation of the Schottky barrier at the mesh electrode, which significantly enhances the ability of gate modulation and reduces the subthreshold swing to 73 mV/dec. More importantly, the saturation of output current which is essential for all transistor-based applications but remains a great challenge for vertical transistors, is easily achieved in our device due to the ultra-thin thickness and native oxidation of MXene, as verified by finite-element simulations. Finally, our device also possesses great potential for being used as wide-spectrum photodetector with fast response speed without complex material and structure design. This work demonstrates that MXene as source electrode offers plenty of opportunities for high performance vertical transistors and photoelectric devices.

The modulation of Schottky barrier, which dominates the carrier injection in vertical organic field-effect transistors, strongly depends on the source electrode. Here, Chen et al. utilize MXene as a source electrode, achieving a subthreshold swing down to 73 mv/dec and a large gate control ability.

Small-molecule ambipolar transistors

Ambipolar transistor properties have been observed in various small-molecule materials. Since a small energy gap is necessary, many types of molecular designs including extended π-skeletons as well as the incorporation of donor and acceptor units have been attempted. In addition to the energy levels, an inert passivation layer is important to observe ambipolar transistor properties. Ambipolar transport has been observed in extraordinary π-electron systems such as antiaromatic compounds, biradicals, radicals, metal complexes, and hydrogen-bonded materials. Several donor/acceptor cocrystals show ambipolar transport as well.

Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors

Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, an organic ternary logic inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory is employed to control the channel conductance systematically, thus realizing the stabilized T-inverter operation. The 3-dimensional (3D) T-inverter is fabricated in a vertically stacked form based on all-dry processes, which enables the high-density integration with high device uniformity. In the flash memory, ultrathin polymer dielectrics are utilized to reduce the programming/erasing voltage as well as operating voltage. With the optimum programming state, the 3D T-inverter fulfills all the important requirements such as full-swing operation, optimum intermediate logic value (~V_DD/2), high DC gain exceeding 20 V/V as well as low-voltage operation (< 5 V). The organic flash memory exhibits long retention characteristics (current change less than 10% after 10⁴s), leading to the long-term stability of the 3D T-inverter. We believe the 3D T-inverter employing flash memory developed in this study can provide a useful insight to achieve high-performance MVL circuits.

High-density information processing without increasing the circuit complexity is highly desired in electronics. Here, Im et al. demonstrate a low-voltage organic ternary logic circuit vertically integrated with the nonvolatile flash memory, increasing the information density by a factor of 3.

Exploring the Preparation Dependence of Crystalline 2D-Extended Ultrathin C8-BTBT-C8 Films

Crystalline organic semiconducting thin films from the benchmark molecule C8-BTBT-C8 were obtained using physical vapor deposition and various solution-based methods. Utilizing atomic force microscopy and X-ray spectromicroscopy, we illustrate the influence of the underlying growth mechanism and determine the highly preparation-dependent orientation of the thiophene backbone. We observe a continuous trend for crystalline C8-BTBT-C8 thin film domains to extend into the square millimeter-range under near-equilibrium growth conditions. For such well-defined systems, electron diffraction tomography allows us to precisely determine the unit cell directly after film deposition and to reveal an 8° molecular tilt angle with respect to the surface normal. This finding is in almost perfect accordance with the values derived from near-edge X-ray absorption fine structure linear dichroism. Within this work, we shine a light on both the successes and challenges connected to the realization of potent, thiophene-based semiconducting films, paving the way toward square centimeter-sized ultrathin organic crystals and their application in organic circuitry.

Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric

When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti content in the NdTiON is varied by co-sputtering a Ti target at 0 W, 10 W, 20 W and 30 W, respectively, while fixing the sputtering power of an Nd target at 45 W. High-performance OTFT is obtained for the 20 W-sputtered Ti, including a small threshold voltage of −0.71 V and high carrier mobility of 1.70 cm²/V·s. The mobility improvement for the optimal Ti content can be attributed to smoother dielectric surface and resultant larger overlying pentacene grains as reflected by Atomic Force Microscopy measurements. Moreover, this sample with the optimal Ti content shows much higher mobility than its counterpart processed at a higher temperature of 400 °C (0.8 cm²/V·s) because it has a thinner gate-dielectric/gate-electrode interlayer for stronger screening on the remote phonon scattering by the gate electrode. In addition, a high dielectric constant of around 10 is obtained for the NdTiON gate dielectric that contributes to a threshold voltage smaller than 1 V for the pentacene OTFT, implying the high potential of the Nd-Ti oxynitride in future high-performance organic devices.

Discovering structure-property relationships for the phonon band structures of hydrocarbon-based organic semiconductor crystals: the instructive case of acenes

By studying the low-frequency phonon bands of a series of crystalline acenes, this article lays the foundation for the development of structure-property relationships for phonons in organic semiconductors. Combining state-of-the art quantum-mechanical simulations with simple classical models, we explain how and why phonon frequencies and group velocities do or do not change when varying the molecular and crystal structures of the materials.

Performance improvement for organic light emitting diodes by changing the position of mixed-interlayer

Organic Light-Emitting Diode (OLED) is presently the most sought-after display technology. It provides low-cost, flexible, rollable displays in addition to wide viewing angles and excellent colour qualities. Still, the organic displays have not reached at their best performance and there is a lot of scope for improvement in their performance. In addition to the injection layer, emission layer, transport layer, etc, researchers are looking forward to the charge carrier transport layer, spacer layer, mixed interlayer, etc. to further enhance the device performance. In this article, a depth analysis related to the impact of the position of the mixed interlayer is performed to analyze the impact on device performance. It is observed that on shifting mixed interlayer (MI) towards the cathode; luminescence and current density depict depreciation. However, on shifting MI towards anode there is a significant performance improvement. The complete analysis includes seven device structures, wherein the position of MI is varied. The best performing device depicts luminescence of 17139 cd/m2 and a current density of 84.6 mA/cm2, which is 40.05% higher for luminescence and 111.5% for current density than that of reference device. Additionally, the internal analysis of device structure is thoroughly evaluated using the cut line method to better understand the internal device physics in terms of the electric field, electron concentration, total current density, Langevin’s recombination rate, and Singlet exciton density.

Analysis of electrical characteristics and electroluminescent efficiency of field induced contact-DGOLET

This research paper discusses the significance development in field-induced contact dual-gate organic light emitting transistor (FIC-DGOLET) device architecture and characteristics. The device behaviour is analyzed and observed significant value of electroluminescent efficiency. The deep investigation of FIC-DGOLET device is discussed in this paper, where impact of varying the various parameters such as thickness of organic semiconductor (OSC) materials from the range of 400 nm to 200 nm at altered value of threshold voltage by using 2D ATLAS simulator. Its theoretical calculation influence over the dynamic control of the device characteristics such as saturated drain current (I ds ), mobility (μ), threshold voltage (V th ) as well as sub threshold swing. The FIC-DGOLET is a dual-gate transistor which also emits light by the operations of two accumulated regions, that are electrons and holes which is not completely overlapped to each other. The leakage current in DG-OLET can be reduced to the extent that 70% than single gate OLET (SG-OLET). The recombination zone mechanism of FIC-DGOLET plays a vital role in its performance, where we get comparable value of electroluminescent efficiency with reported, low value of exciton quenching and current densities. The extracted parameters of DG-OLETs are like drive current of 100A, I on/off 108, threshold voltage V th of 1.3 V at V gs of –3 V and V ds of 0 to –3 V. These extracted performance parameters are very helpful in designing of flexible display applications.

Performance Improvement in single-gate organic transistors with contacts at top and bottom: Additional p + region insertion near source and drain

This research explores performance attributes of bottom gate top contact (BGTC) and bottom gate bottom contact (BGBC) organic thin film transistors (OTFT). To upgrade the performance characteristics, a region of 5nm with high concentration of carrier is tallied neighboring contacts. The drain current for BGTC is –18.6μ A as compared to –5.1μ A of BGBC transistor. Also, it is established that the innate attributes of BGTC are better than those of their counterparts, which is typically considered because of the inadequate contact attributes and mediocre semiconductor quality of BGBC OTFT. The analysis showed that upon varying the length of the channel ranging from 5μm to 40μm, there was a significant change in the drain current of BGTC and BGBC devices. For the same values of V GS and V DS (0V to –5V) where drain current in BGTC structure varied from –129.86μ A to –13.69μ A, whereas for their counterparts it ranged from –37.10μ A to –3.76μ A for channel length equal to 5μ m and 40μ m respectively. Also, with the varying doping strength ranging from 1012 cm–3 to 1016 cm–3 for BGBC device, drain current varied from –2.15μ A to –18.52μ A for BGTC whereas for BGBC it varied from –0.19μ A to –7.09μ A keeping V GS and V DS –5 V, yielding that upon varying the doping strength, where for BGTC I D changed by a factor of 8.6, the BGBC device showed a considerable change by a factor of 37.3. Likewise, mobility, threshold voltage, sub-threshold swing and transconductance also showing better performance with the P + insertion. These variations in the innate attributes are primarily due to the deficiency of carriers at the interface of source and channel, leading to a greater drop in the potential, which is more prominent for the bottom gate bottom contact devices.

Structural characterization of α,ω-DH6T monolayer films grown at the liquid-liquid interface

The molecular self-organization of α,ω-dihexylsexithiophene (α,ω-DH6T) monolayers prepared at the solvent-water interface is investigated by complementary microscopy techniques. Our study focuses on the influence of solvents and initial droplet volume on the resulting film morphology. Long-range extended domains in the monolayer regime are detected by visible light microscopy only for toluene. Small-area electron diffraction (SAED) proves the formation of single-crystalline monolayers with structural parameters identical to the organic bulk crystals. In comparison with conventional vacuum sublimated thin films a deviant molecular orientation, derived from near-edge-X-ray absorption fine structure (NEXAFS) in combination with a lower step height measured by atomic-force-microscopy (AFM), indicates a different behaviour of the flexible terminal hexyl chains during growth in a liquid surrounding. Furthermore, a structural degradation over time is observed which is caused by residual solvent molecules that are incorporated during the transfer procedure.

Laser Printing of Multilayered Alternately Conducting and Insulating Microstructures

Production of multilayered microstructures composed of conducting and insulating materials is of great interest as they can be utilized as microelectronic components. Current proposed fabrication methods of these microstructures include top-down and bottom-up methods, each having their own set of drawbacks. Laser-based methods were shown to pattern various materials with micron/sub-micron resolution; however, multilayered structures demonstrating conducting/insulating/conducting properties were not yet realized. Here, we demonstrate laser printing of multilayered microstructures consisting of conducting platinum and insulating silicon oxide layers by a combination of thermally driven reactions with microbubble-assisted printing. PtCl₂ dissolved in N-methyl-2-pyrrolidone (NMP) was used as a precursor to form conducting Pt layers, while tetraethyl orthosilicate dissolved in NMP formed insulating silicon oxide layers identified by Raman spectroscopy. We demonstrate control over the height of the insulating layer between ∼50 and 250 nm by varying the laser power and number of iterations. The resistivity of the silicon oxide layer at 0.5 V was 1.5 × 10¹¹ Ωm. Other materials that we studied were found to be porous and prone to cracking, rendering them irrelevant as insulators. Finally, we show how microfluidics can enhance multilayered laser microprinting by quickly switching between precursors. The concepts presented here could provide new opportunities for simple fabrication of multilayered microelectronic devices.

A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics

Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.

Organic Thin-Film Transistors as Gas Sensors: A Review

Organic thin-film transistors (OTFTs) are miniaturized devices based upon the electronic responses of organic semiconductors. In comparison to their conventional inorganic counterparts, organic semiconductors are cheaper, can undergo reversible doping processes and may have electronic properties chiefly modulated by molecular engineering approaches. More recently, OTFTs have been designed as gas sensor devices, displaying remarkable performance for the detection of important target analytes, such as ammonia, nitrogen dioxide, hydrogen sulfide and volatile organic compounds (VOCs). The present manuscript provides a comprehensive review on the working principle of OTFTs for gas sensing, with concise descriptions of devices’ architectures and parameter extraction based upon a constant charge carrier mobility model. Then, it moves on with methods of device fabrication and physicochemical descriptions of the main organic semiconductors recently applied to gas sensors (i.e., since 2015 but emphasizing even more recent results). Finally, it describes the achievements of OTFTs in the detection of important gas pollutants alongside an outlook toward the future of this exciting technology.

Complementary Hybrid Semiconducting Superlattices with Multiple Channels and Mutual Stabilization

An organic-inorganic hybrid superlattice with near perfect synergistic integration of organic and inorganic constituents was developed to produce properties vastly superior to those of either moiety alone. The complementary hybrid superlattice is composed of multiple quantum wells of 4-mercaptophenol organic monolayers and amorphous ZnO nanolayers. Within the superlattice, multichannel formation was demonstrated at the organic-inorganic interfaces to produce an excellent-performance field effect transistor exhibiting outstanding field-effect mobility with band-like transport and steep subthreshold swing. Furthermore, mutual stabilizations between organic monolayers and ZnO effectively reduced the performance degradation notorious in exclusively organic and ZnO transistors.

Recent Advances in Flexible and Stretchable Sensing Systems: From the Perspective of System Integration

Biological signals generated during various biological processes are critically important for providing insight into the human physiological status. Recently, there have been many great efforts in developing flexible and stretchable sensing systems to provide biological signal monitoring platforms with intimate integration with biological surfaces. Here, this review summarizes the recent advances in flexible and stretchable sensing systems from the perspective of electronic system integration. A comprehensive general sensing system architecture is described, which consists of sensors, sensor interface circuits, memories, and digital processing units. The subsequent content focuses on the integration requirements and highlights some advanced progress for each component. Next, representative examples of flexible and stretchable sensing systems for electrophysiological, physical, and chemical information monitoring are introduced. This review concludes with an outlook on the remaining challenges and opportunities for future fully flexible or stretchable sensing systems.

Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

High-transparency soluble polyimide with COOH and fluorine functional groups and TiO₂-SiO₂ composite inorganic nanoparticles with high dielectric constants were synthesized in this study. The polyimide and inorganic composite nanoparticles were further applied in the preparation of organic-inorganic hybrid high dielectric materials as the gate dielectric for a stretchable transistor. The optimal ratio of organic and inorganic components in the hybrid films was investigated. In addition, Jeffamine D2000 and polyurethane were added to the gate dielectric to improve the tensile properties of the organic thin film transistor (OTFT) device. PffBT4T-2OD was used as the semiconductor layer material and indium gallium liquid alloy as the upper electrode. Electrical property analysis demonstrated that the mobility could reach 0.242 cm²·V⁻¹·s⁻¹ at an inorganic content of 30 wt.%, and the switching current ratio was 9.04 × 10³. After Jeffamine D2000 and polyurethane additives were added, the mobility and switching current could be increased to 0.817 cm²·V⁻¹·s⁻¹ and 4.27 × 10⁵ for Jeffamine D2000 and 0.562 cm²·V⁻¹·s⁻¹ and 2.04 × 10⁵ for polyurethane, respectively. Additives also improved the respective mechanical properties. The stretching test indicated that the addition of polyurethane allowed the OTFT device to be stretched to 50%, and the electrical properties could be maintained after stretching 150 cycles.

Improving Thin-Film Properties of Poly(vinyl alcohol) by the Addition of Low-Weight Percentages of Cellulose Nanocrystals

The increased demand for electronic devices, combined with a desire to minimize the environmental impact, necessitates the development of new eco-friendly materials. One promising approach is the incorporation of renewable and green materials that possess the desired mechanical and electrical properties while allowing for more ecologically friendly disposal of these devices. The addition of low-weight percentages (0.25-0.75 wt %) of cellulose nanocrystals (CNCs) was investigated as an environmentally friendly additive in aqueous dispersions of poly(vinyl alcohol) (PVA). It was found that these low CNC loadings were sufficient to induce a favorable increase in viscosity, which in turn dramatically enhanced the film quality of the PVA blends through an improvement in the critical radius of the spun film, overall film thickness, and homogeneity of the thin film. This corresponded to an increase in the number of functioning organic electronic devices that could be fabricated by spin coating, including metal-insulator-metal (MIM) capacitors and organic thin-film transistors (OTFTs). Most importantly, the incorporation of CNCs into PVA did not significantly alter the native dielectric properties of the polymer thin films when incorporated into both MIM capacitors and OTFTs.

Recent Progress in Organic Photodetectors and their Applications

Organic photodetectors (OPDs) have attracted continuous attention due to their outstanding advantages, such as tunability of detecting wavelength, low-cost manufacturing, compatibility with lightweight and flexible devices, as well as ease of processing. Enormous efforts on performance improvement and application of OPDs have been devoted in the past decades. In this Review, recent advances in device architectures and operation mechanisms of phototransistor, photoconductor, and photodiode based OPDs are reviewed with a focus on the strategies aiming at performance improvement. The application of OPDs in spectrally selective detection, wearable devices, and integrated optoelectronics are also discussed. Furthermore, some future prospects on the research challenges and new opportunities of OPDs are covered.

Nanosystems, Edge Computing, and the Next Generation Computing Systems

It is widely recognized that nanoscience and nanotechnology and their subfields, such as nanophotonics, nanoelectronics, and nanomechanics, have had a tremendous impact on recent advances in sensing, imaging, and communication, with notable developments, including novel transistors and processor architectures. For example, in addition to being supremely fast, optical and photonic components and devices are capable of operating across multiple orders of magnitude length, power, and spectral scales, encompassing the range from macroscopic device sizes and kW energies to atomic domains and single-photon energies. The extreme versatility of the associated electromagnetic phenomena and applications, both classical and quantum, are therefore highly appealing to the rapidly evolving computing and communication realms, where innovations in both hardware and software are necessary to meet the growing speed and memory requirements. Development of all-optical components, photonic chips, interconnects, and processors will bring the speed of light, photon coherence properties, field confinement and enhancement, information-carrying capacity, and the broad spectrum of light into the high-performance computing, the internet of things, and industries related to cloud, fog, and recently edge computing. Conversely, owing to their extraordinary properties, 0D, 1D, and 2D materials are being explored as a physical basis for the next generation of logic components and processors. Carbon nanotubes, for example, have been recently used to create a new processor beyond proof of principle. These developments, in conjunction with neuromorphic and quantum computing, are envisioned to maintain the growth of computing power beyond the projected plateau for silicon technology. We survey the qualitative figures of merit of technologies of current interest for the next generation computing with an emphasis on edge computing.

Structures, Photoresponse Properties, and Biological Activity of Dicyano-Substituted 4-Aryl-2-pyridone Derivatives

Described in this work is the synthesis of a novel dicyano-substituted N-2-aminoethyl-4-(3-pyridinyl)-2-pyridone organic compound (1) that is characterized by several spectroscopic methods. Compound (1) was utilized for the preparation of its perchlorate (2), chloride (3), and bromide (4) salts. Single-crystal X-ray structures of these three salts were determined, and noncovalent weak interactions involving the aromatic rings, anions, and water molecules in (2-4) were investigated in detail. Solid-state UV-vis spectrum of the reported compounds (1-4) was utilized to calculate their optical band gaps, which clearly indicated that they belong to the semiconductor family. Under illumination condition, the magnitudes of electrical properties of (1) and its salts (2-4) improve remarkably although the improvement differs from salt to salt and the result was analyzed theoretically. Salt (2) was tested for its DNA binding ability.

Predicting the Outcome of Photocyclisation Reactions: A Joint Experimental and Computational Investigation

Photochemical oxidative cyclodehydrogenation reactions are a versatile class of aromatic ring-forming reactions. They are tolerant to functional group substitution and heteroatom inclusion, so can be used to form a diverse range of extended polyaromatic systems by fusing existing ring substituents. However, despite their undoubted synthetic utility, there are no existing models-computational or heuristic-that predict the outcome of photocyclisation reactions across all possible classes of reactants. This can be traced back to the fact that "negative" results are rarely published in the synthetic literature and the lack of a general conceptual framework for understanding how photoexcitation affects reactivity. In this work, we address both of these issues. We present experimental data for a series of aromatically substituted pyrroles and indoles, and show that quantifying induced atomic forces upon photoexcitation provides a powerful predictive model for determining whether a given reactant will photoplanarise and hence proceed to photocyclised product under appropriate reaction conditions. The propensity of a molecule to photoplanarise is related to localised changes in charge distribution around the putative forming ring upon photoexcitation. This is promoted by asymmetry in molecular structures and/or charge distributions, inclusion of heteroatoms and ethylene bridging and well-separated or isolated photocyclisation sites.

Structures, photoresponse properties and DNA binding abilities of 4-(4-pyridinyl)-2-pyridone salts

Three salts [perchlorate (2), chloride (3) and tetrafluoroborate (4)] were synthesized from a 1-(2-aminoethyl)-6-hydroxy-2-oxo-1,2-dihydro-[4,4′-bipyridine]-3,5-dicarbonitrile compound (1) and characterized by spectroscopic and single crystal X-ray diffraction methods. Various noncovalent interactions (e.g., anion⋯π⁺, π⋯π, lp⋯π) are explored in the solid state crystal structure of the salts. Optical band gaps of all the four compounds were determined from their solid-state UV-vis spectrum. Electrical properties like electrical conductivity, photosensitivity, etc. were calculated and the results revealed that they have potential to act as optoelectronic devices. The values of the electrical parameters increase several times when they are exposed to visible light rather than in dark conditions. The light sensing properties of the salts (2–4) are enhanced compared to that of the mother organic compound 1 but the magnitude of this enhancement is not same for the three salts. This observation has been rationalized by theoretical considerations. Moreover, the DNA binding ability of one of the representative salts (compound 2) was examined to check the biological importance of the synthesized salts.

The optical band gap energies in several 2-pyridone derivatives have been measured using solid state UV to explore their semiconductor behavior. The electric current measurements for the four compounds exhibit enhanced photoconduction properties under irradiation of light.

Synthesis of a Zn(ii)-based 1D zigzag coordination polymer for the fabrication of optoelectronic devices with remarkably high photosensitivity

This study presents the fabrication of a novel Zn(ii)-based 1D zigzag coordination polymer, which shows remarkably high photosensitivity and has the potential to be used in photoswitching devices and solar cells.

Tuning of the para-position of pyridyl ligands impacts the electrical properties of a series of Cd(ii) ladder polymers

This work describes the tuning of electrical nature of three Cd(ii)-based 1D coordination polymers by the modifications of para-substituent of pyridyl ligands.

Metal–organic frameworks in a blended polythiophene hybrid film with surface-mediated vertical phase separation for the fabrication of a humidity sensor

HKUST-1 blended P3HT film dramatically improved the electrical signal variations in an OTFT-based humidity sensor due to the superior gas capture properties and the porosity of the HKUST-1.

Design of a coumarinyl-picolinoyl hydrazide Schiff base for the fluorescence turn-on–off sequential sensing of Al3+ and nitroaromatics, and electronic device fabrication

Designing a small organic molecule for fluorescence sensing and electrical conductivity is a challenging task.

Influence of Moisture on the Energy-Level Alignment at the MoO3/Organic Interfaces

MoO₃ is widely used in polymer-based organic solar cells as an anode buffer layer because of its high workfunction and formation of a strong dipole at the MoO₃/polymer interface facilitating charge transfer across the MoO₃/polymer interface. In the present work, we show that exposure of the MoO₃/polymer interface to moisture attracts water molecules to the interface via diffusion. Because of their own strong dipole, water molecules counter the dipole at the MoO₃/polymer interface. As a consequence, the charge transfer across the MoO₃/polymer will reduce and affect the charge transport across the interface. The outcome of this work thus suggests that it is critical to keep the MoO₃/polymer interface moisture-free, which requires special precautions in device fabrications. The composition of the MoO₃/P3HT:PC₆₁BM interface is analyzed with X-ray photoelectron spectroscopy and the depth profiling technique, neutral impact collision ion scattering spectroscopy. The results show that the concentration of oxygen increases upon exposure but leaves the oxidation state of Mo unchanged. The valence electron spectroscopy technique shows that the dipole across the MoO₃/P3HT:PC₆₁BM interface decreases even for short-time exposure to atmosphere because of the diffusion of water molecules to the interface. The far-ranging consequences for organic electronic devices are discussed.

Constant-current corona triode adapted and optimized for the characterization of thin dielectric films

This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.

Thermography based online characterization of conductive thin films in large-scale electronics fabrication

Flexible electronics is an emerging thin film based technology enabling completely new types of products and applications compared to conventional electronics. Since the quality of films defines the functionality of fabricated devices, the lack of suitable online manufacturing quality assessment tools has been identified to be a critical bottleneck while upscaling the volume and the yield of thin film electronics manufacturing. In order to solve that problem, a synchronized thermography (ST) based online measurement system was built. Applicability of proposed roll-to-roll compatible ST based system was demonstrated by characterizing a moving plastic film with conductive indium tin oxide on top. Obtained results show that ST can be utilized for online homogeneity characterization and sheet resistance estimation of large area thin films which are not possible with other existing methods.

Electrical property and Schottky behavior of a flexible Schiff-base compound: X-ray structure and stabilization of 1D water chain

A flexible Schiff-base compound has been synthesized and structurally confirmed by X-ray crystallography. The compound behaves as a Schottky diode, as supported by the impedance spectroscopy.

In Situ GIWAXS Analysis of Solvent and Additive Effects on PTB7 Thin Film Microstructure Evolution during Spin Coating

The influence of solvent and processing additives on the pathways and rates of crystalline morphology formation for spin-coated semiconducting PTB7 (poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)-carbonyl]-thieno[3,4-b]thiophenediyl]]) thin films is investigated by in situ grazing incidence wide-angle X-ray scattering (GIWAXS) and optical reflectance, to better understand polymer solar cell (PSC) optimization approaches. In situ characterization of PTB7 film formation from chloroform (CF), chlorobenzene (CB), and 1,2-dichlorobenzene (DCB) solutions, as well as CB solutions with 1% and 3% v/v of the processing additives 1-chloronapthalene (CN), diphenylether (DPE), and 1,8-diiodooctane (DIO), reveals multiple crystallization pathways with: (i) single-solvent systems exhibiting rapid (<3 s) crystallization after a solvent boiling point-dependent film thinning transition, (ii) solvent + additive systems exhibiting different crystallization pathways and crystallite formation times from minutes (CN, DPE) to 1.5 h (DIO). Identifying crystalline intermediates has implications for bulk-heterojunction PSC morphology optimization via optimized spin-casting processes.