Band structures of the layer compounds 1T-TaS2and 2H-TaSe2in the presence of commensurate charge-density waves

Probing the Phase Transition to a Coherent 2D Kondo Lattice

Kondo lattices are systems with unusual electronic properties that stem from strong electron correlation, typically studied in intermetallic 3D compounds containing lanthanides or actinides. Lowering the dimensionality of the system enhances the role of electron correlations providing a new tuning knob for the search of novel properties in strongly correlated quantum matter. The realization of a 2D Kondo lattice by stacking a single-layer Mott insulator on a metallic surface is reported. The temperature of the system is steadily lowered and by using high-resolution scanning tunneling spectroscopy, the phase transition leading to the Kondo lattice is followed. Above 27 K the interaction between the Mott insulator and the metal is negligible and both keep their original electronic properties intact. Below 27 K the Kondo screening of the localized electrons in the Mott insulator begins and below 11 K the formation of a coherent quantum electronic state extended to the entire sample, i.e., the Kondo lattice, takes place. By means of density functional theory, the electronic properties of the system and its evolution with temperature are explained. The findings contribute to the exploration of unconventional states in 2D correlated materials.

First principles investigation of screened Coulomb interaction and electronic structure of low-temperature phase TaS2

By means of ab initio computation schemes, we examine the electronic screening, Coulomb interaction strength, and the electronic structure of a quantum spin liquid candidate monolayer TaS2 in its low-temperature commensurate charge-density-wave phase. Not only local (U ) but non-local (V ) correlations are estimated within random phase approximation based on two different screening models. Using GW + EDMFT (GW plus extended dynamical mean-field theory) method, we investigate the detailed electronic structure by increasing the level of non-local approximation from DMFT (V = 0 ) to EDMFT and GW + EDMFT.

Probing electron-phonon and phonon-phonon coupling in type-II Dirac semi-metal NiTe2via temperature-dependent Raman spectroscopy

We report the temperature-dependent structural characterization of type-II Dirac semimetal NiTe₂in the form of a bulk single crystal and a nanoflake (200 nm thick). Detailed x-ray diffraction study along with Rietveld refinement analysis reveals superior crystallinity and linear thermal expansion coefficient (α_T) of 5.56 × 10^-6and 22.5 × 10^-6K^-1along a or b and c lattice directions, respectively. Temperature evolution of Raman spectra shows non-linear variations in the phonon frequency and full-width half maxima of the out-of-plane A1gand in-plane E_gmodes. Raman mode E2g1, corresponding to an in-plane vibration, disappears on decreasing the thickness from bulk to nanoflake. Quantitative analysis with anharmonic model yields dominating electron-phonon interaction over phonon-phonon interaction mediated by three- and four-phonon processes.

Visualization of Chiral Electronic Structure and Anomalous Optical Response in a Material with Chiral Charge Density Waves

Chiral materials have attracted significant research interests as they exhibit intriguing physical properties, such as chiral optical response, spin-momentum locking, and chiral induced spin selectivity. Recently, layered transition metal dichalcogenide 1T-TaS_{2} has been found to host a chiral charge density wave (CDW) order. Nevertheless, the physical consequences of the chiral order, for example, in electronic structures and the optical properties, are yet to be explored. Here, we report the spectroscopic visualization of an emergent chiral electronic band structure in the CDW phase, characterized by windmill-shaped Fermi surfaces. We uncover a remarkable chirality-dependent circularly polarized Raman response due to the salient in-plane chiral symmetry of CDW, although the ordinary circular dichroism vanishes. Chiral Fermi surfaces and anomalous Raman responses coincide with the CDW transition, proving their lattice origin. Our Letter paves a path to manipulate the chiral electronic and optical properties in two-dimensional materials and explore applications in polarization optics and spintronics.

Long-lifetime spin excitations near domain walls in 1T-TaS2

SignificanceThere is an intense ongoing search for two-level quantum systems with long lifetimes for applications in quantum communication and computation. Much research has been focused on studying isolated spins in semiconductors or band insulators. Mott insulators provide an interesting alternative platform but have been far less explored. In this work we use a technique capable of resolving individual spins at atomic length scales, to measure the two-level switching of spin states in 1T-TaS₂. We find quasi-1D chains of spin-1/2 electrons embedded in 1T-TaS₂ which have exceptionally long lifetimes. The discovery of long-lived spin states in a tractable van der Waal material opens doors to using Mott systems in future quantum information applications.

Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

The family of two-dimensional (2D) materials composed of atomically thin layers connected via van der Waals interactions has attracted much curiosity due to a variety of intriguing physical, optical, and electrical characteristics. The significance of analyzing statistics on electrical devices and circuits based on 2D materials is seldom underestimated. Certain requirements must be met to deliver scientific knowledge that is beneficial in the field of 2D electronics: synthesis and fabrication must occur at the wafer level, variations in morphology and lattice alterations must be visible and statistically verified, and device dimensions must be appropriate. The authors discussed the most recent significant concerns of 2D materials in the provided prose and attempted to highlight the prerequisites for synthesis, yield, and mechanism behind device-to-device variability, reliability, and durability benchmarking under memristors characteristics; they also indexed some useful approaches that have already been reported to be advantageous in large-scale production. Commercial applications, on the other hand, will necessitate further effort.

Computational Methods for Charge Density Waves in 2D Materials

Two-dimensional (2D) materials that exhibit charge density waves (CDWs)-spontaneous reorganization of their electrons into a periodic modulation-have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs were mostly focused on bulk materials. However, applications for quantum devices require few-layer materials to fully utilize the emergent phenomena. The CDW field has greatly expanded over the decades, warranting a focus on the computational efforts surrounding them specifically in 2D materials. In this review, we cover ground in the following relevant theory-driven subtopics for TaS2 and TaSe2: summary of general computational techniques and methods, resulting atomic structures, the effect of electron-phonon interaction of the Raman scattering modes, the effects of confinement and dimensionality on the CDW, and we end with a future outlook. Through understanding how the computational methods have enabled incredible advancements in quantum materials, one may anticipate the ever-expanding directions available for continued pursuit as the field brings us through the 21st century.

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2

Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature TCDW-Mott, whereas this was difficult for bulk TMDs with TCDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe2. Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe2 compared to NbSe2, originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature.

Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS_{2}-Related Layered Materials

Here we use low-temperature scanning tunneling microscopy and spectroscopy to reveal the roles of the narrow electronic band in two 1T-TaS_{2}-related materials (bulk 1T-TaS_{2} and 4H_{b}-TaS_{2}). 4H_{b}-TaS_{2} is a superconducting compound with alternating 1T-TaS_{2} and 1H-TaS_{2} layers, where the 1H-TaS_{2} layer has a weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS_{2} layers. In the 1T-TaS_{2} layer of 4H_{b}-TaS_{2}, we observe a narrow electronic band located near the Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS_{2} layers. The weak electronic hybridization between the 1T-TaS_{2} and 1H-TaS_{2} layers in 4H_{b}-TaS_{2} shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation-induced band splitting. In contrast, in bulk 1T-TaS_{2}, there is an interlayer CDW coupling-induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS_{2} and 4H_{b}-TaS_{2}, the insulating gap in bulk 1T-TaS_{2} results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS_{2} layers.

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.

Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide

Charge density waves and negative differential resistance are seemingly unconnected physical phenomena. The former is an ordered quantum fluid of electrons, intensely investigated for its relation with superconductivity, while the latter receives much attention for its potential applications in electronics. Here we show that these two phenomena can not only coexist but also that the localized electronic states of the charge density wave are essential to induce negative differential resistance in a transition metal dichalcogenide, 1T-TaS2. Using scanning tunneling microscopy and spectroscopy, we report the observation of negative differential resistance in the commensurate charge density wave state of 1T-TaS2. The observed phenomenon is explained by the interplay of interlayer and intra-layer tunneling with the participation of the atomically localized states of the charge density wave maxima and minima. We demonstrate that lattice defects can locally affect the coupling between the layers and are therefore a mechanism to realize NDR in these materials.

Realization of a Metallic State in 1T-TaS_{2} with Persisting Long-Range Order of a Charge Density Wave

Metallization of 1T-TaS_{2} is generally initiated at the domain boundary of a charge density wave (CDW), at the expense of its long-range order. However, we demonstrate in this study that the metallization of 1T-TaS_{2} can be also realized without breaking the long-range CDW order upon surface alkali doping. By using scanning tunneling microscopy, we find the long-range CDW order is always persisting, and the metallization is instead associated with additional in-gap excitations. Interestingly, the in-gap excitation is near the top of the lower Hubbard band, in contrast to a conventional electron-doped Mott insulator where it is beneath the upper Hubbard band. In combination with the numerical calculations, we suggest that the appearance of the in-gap excitations near the lower Hubbard band is mainly due to the effectively reduced on-site Coulomb energy by the adsorbed alkali ions.

Dynamical Metal to Charge-Density-Wave Junctions in an Atomic Wire Array

We investigated the atomic scale electronic phase separation emerging from a quasi-1D charge-density-wave (CDW) state of the In atomic wire array on a Si(111) surface. Spatial variations of the CDW gap and amplitude are quantified for various interfaces of metallic and insulating CDW domains by scanning tunneling microscopy and spectroscopy (STS). The strong anisotropy in the metal-insulator junctions is revealed with an order of magnitude difference in the interwire and intrawire junction lengths of 0.4 and 7 nm, respectively. The intrawire junction length is reduced dramatically by an atomic scale impurity, indicating the tunability of the metal-insulator junction in an atomic scale. Density functional theory calculations disclose the dynamical nature of the intrawire junction formation and tunability.

Photoinduced Dynamics of Commensurate Charge Density Wave in 1T-TaS2 Based on Three-Orbital Hubbard Model

We study the coupled charge-lattice dynamics in the commensurate charge density wave (CDW) phase of the layered compound 1T-TaS 2 driven by an ultrashort laser pulse. For describing its electronic structure, we employ a tight-binding model of previous studies including the effects of lattice distortion associated with the CDW order. We further add on-site Coulomb interactions and reproduce an energy gap at the Fermi level within a mean-field analysis. On the basis of coupled equations of motion for electrons and the lattice distortion, we numerically study their dynamics driven by an ultrashort laser pulse. We find that the CDW order decreases and even disappears during the laser irradiation while the lattice distortion is almost frozen. We also find that the lattice motion sets in on a longer time scale and causes a further decrease in the CDW order even after the laser irradiation.

Evidence for a Quasi-One-Dimensional Charge Density Wave in CuTe by Angle-Resolved Photoemission Spectroscopy

We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature T_{c}=335  K by angle-resolved photoemission spectroscopy. An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te p_{x} orbitals. The CDW gap can be filled by increasing the temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.

Spinon Fermi Surface in a Cluster Mott Insulator Model on a Triangular Lattice and Possible Application to 1T-TaS_{2}

1T-TaS_{2} is a cluster Mott insulator on the triangular lattice with 13 Ta atoms forming a star of David cluster as the unit cell. We derive a two-dimensional XXZ spin-1/2 model with a four-spin ring exchange term to describe the effective low energy physics of a monolayer 1T-TaS_{2}, where the effective spin-1/2 degrees of freedom arises from the Kramers degenerate spin-orbital states on each star of David. A large scale density matrix renormalization group simulation is further performed on this effective model and we find a gapless spin liquid phase with a spinon Fermi surface at a moderate to large strength region of the four-spin ring exchange term. All peaks in the static spin structure factor are found to be located on the "2k_{F}" surface of a half-filled spinon on the triangular lattice. Experiments to detect the spinon Fermi surface phase in 1T-TaS_{2} are discussed.

Ultrafast Doublon Dynamics in Photoexcited 1T-TaS_{2}

Strongly correlated materials exhibit intriguing properties caused by intertwined microscopic interactions that are hard to disentangle in equilibrium. Employing nonequilibrium time-resolved photoemission spectroscopy on the quasi-two-dimensional transition-metal dichalcogenide 1T-TaS_{2}, we identify a spectroscopic signature of doubly occupied sites (doublons) that reflects fundamental Mott physics. Doublon-hole recombination is estimated to occur on timescales of electronic hopping ℏ/J≈14  fs. Despite strong electron-phonon coupling, the dynamics can be explained by purely electronic effects captured by the single-band Hubbard model under the assumption of weak hole doping, in agreement with our static sample characterization. This sensitive interplay of static doping and vicinity to the metal-insulator transition suggests a way to modify doublon relaxation on the few-femtosecond timescale.

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2

Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave insulator 1T-TaS₂ using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the walls own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties.The electronic states within domain walls in an interacting electronic system remain elusive. Here, Cho et al. report that the domain wall state in a charge-density-wave insulator 1T-TaS₂ decomposes into two localized but nonconducting states at the center or edges of domain walls.

Tuning Phase Transitions in 1T-TaS2 via the Substrate

Phase transitions in 2D materials can lead to massive changes in electronic properties that enable novel electronic devices. Tantalum disulfide (TaS₂), specifically the "1T" phase (1T-TaS₂), exhibits a phase transition based on the formation of commensurate charge density waves (CCDW) at 180 K. In this work, we investigate the impact of substrate choice on the phase transitions in ultrathin 1T-TaS₂. Doping and charge transfer from the substrate has little impact on CDW phase transitions. On the contrary, we demonstrated that substrate surface roughness is a primary extrinsic factor in CCDW transition temperature and hysteresis, where higher roughness leads to smaller transition hysteresis. Such roughness can be simulated via surface texturing of SiO₂/Si substrates, which controllably and reproducibly induces periodic strain in the 1T-TaS₂ and thereby enables the potential for engineering CDW phase transitions.

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

Atomistic origin of an ordered superstructure induced superconductivity in layered chalcogenides

Interplay among various collective electronic states such as charge density wave and superconductivity is of tremendous significance in low-dimensional electron systems. However, the atomistic and physical nature of the electronic structures underlying the interplay of exotic states, which is critical to clarifying its effect on remarkable properties of the electron systems, remains elusive, limiting our understanding of the superconducting mechanism. Here, we show evidence that an ordering of selenium and sulphur atoms surrounding tantalum within star-of-David clusters can boost superconductivity in a layered chalcogenide 1T-TaS2-xSex, which undergoes a superconducting transition in the nearly commensurate charge density wave phase. Advanced electron microscopy investigations reveal that such an ordered superstructure forms only in the x area, where the superconductivity manifests, and is destructible to the occurrence of the Mott metal-insulator transition. The present findings provide a novel dimension in understanding the relationship between lattice and electronic degrees of freedom.

The effect of lithium intercalation on the electronic structure of the ternary compound semiconductors ZrSe(2-x)S(x)

The electronic properties of the lithium intercalated layered transition metal dichalcogenide semiconductors ZrS(x)Se(2-x) for x = 0-2 have been calculated by density functional theory (DFT) using the WIEN2k code. The calculations have been carried out by the PBE functional and the TB-MBJ potential as proposed by Tran and Blaha. The calculations have been performed with and without spin-orbit coupling and reveal that the intercalation of lithium causes the conduction bands of LiZrS(x)Se(2-x) to shift by about 2 eV towards lower binding energy. From this, a Fermi level crossing and metallic behavior in the three intercalated compounds result. Moreover, a number of trends can be observed. Due to the contributions of the dichalcogenide p-states in the valence band the inclusion of SO coupling in the calculations lifts the degeneracy at the points Γ and A of the Brillouin zone in the same way as in the parent compounds. With regard to crystal field effects for each compound the splitting is larger at the A point than at the Γ point and the absolute value of the splitting increases with the atomic number of the chalcogenide. In particular, the simple Fermi surface consisting solely of barrels centered along the LML line makes LiZrS(x)Se(2-x) a promising Fermi liquid reference compound.

Real-space coexistence of the melted Mott state and superconductivity in Fe-substituted 1T-TaS2

We have performed high-resolution angle-resolved photoemission spectroscopy of layered chalcogenide 1T-Fe(x)Ta(1-x)S(2) which undergoes a superconducting transition in the nearly commensurate charge-density-wave phase (melted Mott phase). We found a single electron pocket at the Brillouin-zone center in the melted Mott phase, which is created by the backfolding of bands due to the superlattice potential of charge-density-wave. This electron pocket appears in the x region where the samples show superconductivity, and is destroyed by the Mott- and Anderson-gap opening. Present results suggest that the melted Mott state and the superconductivity coexist in real space, providing a new insight into the interplay between electron correlation, charge order, and superconductivity.

Preformed excitonic liquid route to a charge density wave in 2H-TaSe2

Recent experiments on 2H-TaSe(2) contradict the long-held view of the charge density wave arising from a nested band structure. An intrinsically strong coupling view, involving a charge density wave state arising as a Bose condensation of preformed excitons emerges as an attractive, albeit scantily investigated alternative. Using the local density approximation plus multiorbital dynamic mean field theory, we show that this scenario agrees with a variety of normal state data for 2H-TaSe(2). Based thereupon, the ordered states in a subset of dichalcogenides should be viewed as instabilities of a correlated, preformed excitonic liquid.

On the origin of charge-density waves in select layered transition-metal dichalcogenides

The occurrence of charge-density waves in three selected layered transition-metal dichalcogenides-1T-TaS(2), 2H-TaSe(2) and 1T-TiSe(2)-is discussed from an experimentalist's point of view with a particular focus on the implications of recent angle-resolved photoelectron spectroscopy results. The basic models behind charge-density-wave formation in low-dimensional solids are recapitulated, the experimental and theoretical results for the three selected compounds are reviewed, and their band structures and spectral weight distributions in the commensurate charge-density-wave phases are calculated using an empirical tight-binding model. It is explored whether the origin of charge-density waves in the layered transition-metal dichalcogenides can be understood in a unified way on the basis of a few measured and calculated parameters characterizing the interacting electron-lattice system. It is found that the predictions of the standard mean-field model agree only semi-quantitatively with the experimental data and that there is not one generally dominant factor driving charge-density-wave formation in this family of layer compounds. The need for further experimental and theoretical scrutiny is emphasized.

Ultrafast melting of a charge-density wave in the Mott insulator 1T-TaS2

Femtosecond time-resolved core-level photoemission spectroscopy with a free-electron laser is used to measure the atomic-site specific charge-order dynamics of the charge-density wave in the Mott insulator 1T-TaS2. After strong photoexcitation, a prompt loss of charge order and subsequent fast equilibration dynamics of the electron-lattice system are observed. On the time scale of electron-phonon thermalization, about 1 ps, the system is driven across a phase transition from a long-range charge ordered state to a quasiequilibrium state with domainlike short-range charge and lattice order. The experiment opens the way to study the nonequilibrium dynamics of condensed matter systems with full elemental, chemical, and atomic-site selectivity.

A scanning tunneling microscopy study of a new superstructure around defects created by tip-sample interaction on 2H- NbSe(2)

A low temperature scanning tunneling microscope (LT-STM) was used to investigate a new superstructure on the cleaved surface of a 2H- NbSe(2) single crystal after introduction of structural defects through bias voltage pulses during tunneling at 4.2 K. A charge density wave (CDW) with a [Formula: see text] reconstruction was observed in the vicinity of the defects and the well-known 3 × 3 CDW was observed far from these defects. Multiple layers inside the defects were also exposed and showed the new modulation of the CDW on all of the Se layers. This indicates a local 2H to 1T phase transition for the NbSe(2) crystal structure. Two other interesting observations are also included: a disordered CDW-like phase of the [Formula: see text] structure near the atomic steps and an anomalous distortion in the underlying atomic lattice revealed by STM images. A local heating mechanism is proposed to explain the creation of these novel structures.

X-Ray photoemission study of CuIr2S4: Ir3+-Ir4+ charge ordering and the effect of light illumination

We have studied the electronic structure of the spinel-type compound CuIr2S4 using x-ray photoemission spectroscopy (XPS). CuIr2S4 undergoes a metal-insulator transition (MIT) at approximately 226 K. In going from the metallic to insulating states, the valence-band photoemission spectrum shows a gap opening at the Fermi level and a rigid-band shift of approximately 0.15 eV. In addition, the Ir 4f core-level spectrum is dramatically changed by the MIT. The Ir 4f line shape of the insulating state can be decomposed into two contributions, consistent with the charge disproportionation of Ir3+:Ir4+=1:1. XPS measurements under laser irradiation indicate that the charge disproportionation of CuIr2S4 is very robust against photo-excitation in contrast to Cs2Au2Br6 which shows photo-induced valence transition.

Mott phase at the surface of 1T-TaSe2 observed by scanning tunneling microscopy

In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at the surface of 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm the presence of a large hysteresis related to a first order process. The local character of the tunneling spectroscopy technique allows a direct visualization of the surface symmetry and provides spectroscopic measurements on the defect-free region of the sample. It follows that the electronic localization is driven purely by the enhancement of the charge density wave amplitude which drives a bandwidth controlled metal-insulator transition.

Ta 5d band symmetry of 1T-TaS1.2Se0.8 in the commensurate charge-density-wave phase

We present a detailed angle-resolved photoemission study on the layered transition-metal dichalcogenide 1T-TaS1.2Se0.8 in the commensurate charge-density-wave (CDW) phase. A drastic reduction in the spectral weight along the high symmetry line GammaM, particularly around the point M, is observed when s-polarized light was used. This implies that the initial state must be symmetric with respect to a mirror plane perpendicular to the line GammaK, which is consistent with conventional band calculations in the absence of the CDW. We conclude that there is only a limited amount of modification of the electronic structure of 1T-TaS1.2Se0.8 in the commensurate CDW phase due to the CDW-related potential.

Spectroscopic signatures of a bandwidth-controlled Mott transition at the surface of 1T-TaSe2

High-resolution angle-resolved photoemission data show that a metal-insulator Mott transition occurs at the surface of the quasi-two-dimensional compound 1T-TaSe2. The transition is driven by the narrowing of the Ta 5d band induced by a temperature-dependent modulation of the atomic positions. A dynamical mean-field theory calculation of the spectral function of the half-filled Hubbard model captures the main qualitative feature of the data, namely, the rapid transfer of spectral weight from the observed quasiparticle peak at the Fermi surface to the Hubbard bands, as the correlation gap opens up.