Enhancing the conductivity of transparent graphene films via doping

Endemic species analysis: Foliar epidermal anatomical characters of Aster glehnii F. Schmidt (Asteraceae)

The classification and identification of Aster glehnii F. Schmidt are determined from its foliar epidermal anatomical features. Scanning electronic microscopy has been used to determine the foliar epidermal anatomical characteristics of the species in detail. This study compared the qualitative and quantitative characteristics of the leaf epidermis of A. glehnii for taxonomic identification to be used as a reference for future studies on the species. A. glehnii has smooth, thin cuticles, depressed anomocytic stomata dispersed randomly throughout the leaf surface, polygonal epidermal cells with straight to slightly curved anticlinal walls, and no trichomes. There are obvious veins containing thick-walled bundle sheath cells. The stomatal density is between 100 and 150 stomata per millimeter. The vein density ranges from five to 10 veins per millimeter, and the epidermal cells are 10 to 20 μm long and 5 to 10 μm in width. Understanding the connections between the different A. glehnii species and categorizing and identifying them depend heavily on these foliar epidermal structural features. Taxonomy and conservation are closely intertwined because the former serves as the basis for comprehending and safeguarding biodiversity. RESEARCH HIGHLIGHTS: Optical microscopy of the A. glehnii leaf epidermis for taxonomic identification SEM was used to identify and authenticate endemic species Microscopic identification of endemic species can assist in the conservation.

Recent advances in carbon-based materials for high-performance perovskite solar cells: gaps, challenges and fulfillment

Presently, carbon-based nanomaterials have shown tremendous potential for energy conversion applications. Especially, carbon-based materials have emerged as excellent candidates for the fabrication of halide perovskite-based solar cells, which may lead to their commercialization. In the last decade, PSCs have rapidly developed, and these hybrid devices demonstrate a comparable performance to silicon-based solar cells in terms of power conversion efficiency (PCE). However, PSCs lag behind silicon-based solar cells due to their poor stability and durability. Generally, noble metals such gold and silver are employed as back electrode materials during the fabrication of PSCs. However, the use of these expensive rare metals is associated with some issues, urgently necessitating the search for cost-effective materials, which can realize the commercial applications of PSCs due to their interesting properties. Thus, the present review shows how carbon-based materials can become the main candidates for the development of highly efficient and stable PSCs. Carbon-based materials such as carbon black, graphite, graphene nanosheets (2D/3D), carbon nanotubes (CNTs), carbon dots, graphene quantum dots (GQDs) and carbon nanosheets show potential for the laboratory and large-scale fabrication of solar cells and modules. Carbon-based PSCs can achieve efficient and long-term stability for both rigid and flexible substrates because of their high conductivity and excellent hydrophobicity, thus showing good results in comparison to metal electrode-based PSCs. Thus, the present review also demonstrates and discusses the latest state-of-the-art and recent advances for carbon-based PSCs. Furthermore, we present perspectives on the cost-effective synthesis of carbon-based materials for the broader view of the future sustainability of carbon-based PSCs.

Modulation of graphene THz absorption based on HAuCl4 doping method

Graphene is an attractive material for terahertz (THz) absorbers because of its tunable Fermi-Level (E_F). It has become a research hotspot to modulate the E_F of graphene and THz absorption of graphene. Here, a sandwich-structured single layer graphene (SLG)/ Polyimide (PI)/Au THz absorber was proposed, and top-layer graphene was doped by HAuCl₄ solutions. The E_F of graphene was shifted by HAuCl₄ doping, which was characterized by scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and Raman tests. The results showed that the E_F is shifted about 0.42 eV under 100 mM HAuCl₄ doping, the sheet resistance is reduced from 1065 Ω/sq (undoped) to 375 Ω/sq (100 mM). The corresponding absorbance was increased from 40% to 80% at 0.65 THz and increased from 50% to 90% at 2.0 THz under 100 mM HAuCl₄ doping. Detailed studies showed that the absorption came from a sandwich structure that meets the impedance matching requirements and provided a thin resonant cavity to capture the incident THz waves. In addition, not only the absorber can be prepared simply, but its results in experiments and simulations agree as well. The proposed device can be applied to electromagnetic shielding and imaging, and the proposed method can be applied to prepare other graphene-based devices.

Twist Angle-Dependent Molecular Intercalation and Sheet Resistance in Bilayer Graphene

Bilayer graphene (BLG) has a two-dimensional (2D) interlayer nanospace that can be used to intercalate molecules and ions, resulting in a significant change of its electronic and magnetic properties. Intercalation of BLG with different materials, such as FeCl₃, MoCl₅, Li ions, and Ca ions, has been demonstrated. However, little is known about how the twist angle of the BLG host affects intercalation. Here, by using artificially stacked BLG with controlled twist angles, we systematically investigated the twist angle dependence of intercalation of metal chlorides. We discovered that BLG with high twist angles of >15° is more favorable for intercalation than BLG with low twist angles. Density functional theory calculations suggested that the weaker interlayer coupling in high twist angle BLG is the key for effective intercalation. Scanning transmission electron microscope observations revealed that co-intercalation of AlCl₃ and CuCl₂ molecules into BLG gives various 2D structures in the confined interlayer nanospace. Moreover, before intercalation we observed a significantly lower sheet resistance in BLG with high twist angles (281 ± 98 Ω/□) than that in AB stacked BLG (580 ± 124 Ω/□). Intercalation further decreased the sheet resistance, reaching values as low as 48 Ω/□, which is the lowest value reported so far for BLG. This work provides a twist angle-dependent phenomenon, in which enhanced intercalation and drastic changes of the electrical properties can be realized by controlling the stacking angle of adjacent graphene layers.

Highly efficient and selective extraction of gold by reduced graphene oxide

Materials capable of extracting gold from complex sources, especially electronic waste (e-waste), are needed for gold resource sustainability and effective e-waste recycling. However, it remains challenging to achieve high extraction capacity and precise selectivity if only a trace amount of gold is present along with other metallic elements . Here we report an approach based on reduced graphene oxide (rGO) which provides an ultrahigh capacity and selective extraction of gold ions present in ppm concentrations (>1000 mg of gold per gram of rGO at 1 ppm). The excellent gold extraction performance is accounted to the graphene areas and oxidized regions of rGO. The graphene areas spontaneously reduce gold ions to metallic gold, and the oxidized regions allow good dispersibility of the rGO material so that efficient adsorption and reduction of gold ions at the graphene areas can be realized. By controlling the protonation of the oxidized regions of rGO, gold can be extracted exclusively, without contamination by the other 14 co-existing elements typically present in e-waste. These findings are further exploited to demonstrate recycling gold from real-world e-waste with good scalability and economic viability, as exemplified by using rGO membranes in a continuous flow-through process.

On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation

Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe₂, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe₂ and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe₂ to self-intercalated Ni₃Te₄ and Ni₅Te₆. The synthesis of Ni self-intercalated Ni_xTe_y compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe₂ intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.

Synthesis approach-dependent antiviral properties of silver nanoparticles and nanocomposites

Numerous viral infections are common among humans, and some can lead to death. Even though conventional antiviral agents are beneficial in eliminating viral infections, they may lead to side effects or physiological toxicity. Silver nanoparticles and nanocomposites have been demonstrated to possess inhibitory properties against several pathogenic microbes, including archaea, bacteria, fungi, algae, and viruses. Its pronounced antimicrobial activity against various microbe-mediated diseases potentiates its use in combating viral infections. Notably, the appropriated selection of the synthesis method to fabricate silver nanoparticles is a major factor for consideration as it directly impacts antiviral efficacy, level of toxicity, scalability, and environmental sustainability. Thus, this article presents and discusses various synthesis approaches to produce silver nanoparticles and nanocomposites, providing technological insights into selecting approaches to generate antiviral silver-based nanoparticles. The antiviral mechanism of various formulations of silver nanoparticles and the evaluation of its propensity to combat specific viral infections as a potential antiviral agent are also discussed.

Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 °C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, high-resolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.

Sandwich-Doping for a Large Schottky Barrier and Long-Term Stability in Graphene/Silicon Schottky Junction Solar Cells

Doping is an effective method for controlling the electrical properties and work function of graphene which can improve the power conversion efficiency of graphene-based Schottky junction solar cells (SJSCs). However, in previous approaches, the stability of chemical doping decreased over time due to the decomposition of dopants on the surface of graphene under ambient conditions. Here, we report an efficient and strong p-doping by simple sandwich doping on both the top and bottom surfaces of graphene. We confirmed that the work function of sandwich-doped graphene increased by 0.61 eV and its sheet resistance decreased by 305.8 Ω/sq, compared to those of the pristine graphene. Therefore, the graphene-silicon SJSCs that used sandwich-doped graphene had a power conversion efficiency of 10.02%, which was 334% higher than that (2.998%) of SJSCs that used pristine graphene. The sandwich-doped graphene-based silicon SJSCs had excellent long-term stability over 45 days without additional encapsulation.

Synthesis and Characterization of Free-Stand Graphene/Silver Nanowire/Graphene Nano Composite as Transparent Conductive Film with Enhanced Stiffness

As-grown graphene via chemical vapor deposition (CVD) has potential defects, cracks, and disordered grain boundaries induced by the synthesis and transfer process. Graphene/silver nanowire/graphene (Gr/AgNW/Gr) sandwich composite has been proposed to overcome these drawbacks significantly as the AgNW network can provide extra connections on graphene layers to enhance the stiffness and electrical conductivity. However, the existing substrate (polyethylene terephthalate (PET), glass, silicon, and so on) for composite production limits its application and mechanics behavior study. In this work, a vacuum annealing method is proposed and validated to synthesize the free-stand Gr/AgNW/Gr nanocomposite film on transmission electron microscopy (TEM) grids. AgNW average spacing, optical transmittance, and electrical conductivity are characterized and correlated with different AgNW concentrations. Atomic force microscope (AFM) indentation on the free-stand composite indicates that the AgNW network can increase the composite film stiffness by approximately 460% with the AgNW concentration higher than 0.6 mg/mL. Raman spectroscopy shows the existence of a graphene layer and the disturbance of the AgNW network. The proposed method provides a robust way to synthesize free-stand Gr/AgNW/Gr nanocomposite and the characterization results can be utilized to optimize the nanocomposite design for future applications.

Review of fabrication methods of large-area transparent graphene electrodes for industry

Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes; it has low sheet resistance, high optical transmission and is flexible. Whereas the most common transparent electrode material, tin-doped indium-oxide (ITO) is brittle, less transparent and expensive, which limit its compatibility in flexible electronics as well as in low-cost devices. Here we review two large-area fabrication methods for graphene based transparent electrodes for industry: liquid exfoliation and low-pressure chemical vapor deposition (CVD). We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent results. State-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of 43.5, slightly over the minimum required for industry of 35, while CVD reaches as high as 419.

A 2D Titanium Carbide MXene Flexible Electrode for High-Efficiency Light-Emitting Diodes

Although several transparent conducting materials such as carbon nanotubes, graphene, and conducting polymers have been intensively explored as flexible electrodes in optoelectronic devices, their insufficient electrical conductivity, low work function, and complicated electrode fabrication processes have limited their practical use. Herein, a 2D titanium carbide (Ti₃ C₂ ) MXene film with transparent conducting electrode (TCE) properties, including high electrical conductivity (≈11 670 S cm^-1 ) and high work function (≈5.1 eV), which are achieved by combining a simple solution processing with modulation of surface composition, is described. A chemical neutralization strategy of a conducting-polymer hole-injection layer is used to prevent detrimental surface oxidation and resulting degradation of the electrode film. Use of the MXene electrode in an organic light-emitting diode leads to a current efficiency of ≈102.0 cd A^-1 and an external quantum efficiency of ≈28.5% ph/el, which agree well with the theoretical maximum values from optical simulations. The results demonstrate the strong potential of MXene as a solution-processable electrode in optoelectronic devices and provide a guideline for use of MXenes as TCEs in low-cost flexible optoelectronic devices.

Towards large-scale graphene transfer

The transfer process is crucial for obtaining high-quality graphene for its large-scale industrial application. In this review, graphene transfer methods are systematically classified along with an analysis of the contamination or impurity of graphene that is introduced during the transfer process. Two key processes are emphasized, the substrate removal process and the direct/indirect transfer of graphene. Based on the efficiency and cost factors of industrial scale production, various transfer methods are summarized and evaluated. Potential transfer technologies and future research directions for industrial application are prospected.

A monitorable and renewable pollution filter based on graphene nanoplatelets

This paper deals with the fabrication, modeling and experimental characterization of a monitorable and renewable graphene-based pollution filter. The main goal is to demonstrate a method to monitor the status of such a filter in real time during its operating phases: pollutant adsorption, saturation, and regeneration. The filter is realized by a disk of pressed graphene nanoplatelets. This is a low-cost type of graphene which has recently drawn great interest due to its potential use in large scale industrial production. Here the nanomaterial is obtained through the exfoliation method assisted by microwave irradiation, by exploiting the thermal expansion of commercial intercalated graphite, according to a low-cost and ecologically friendly procedure. The filter is used here to adsorb acetonitrile, a toxic water-soluble organic compound that is present in some industrial solvents and paints. The monitoring method is based on the interpretation of the time variation of the electrical impedance measured during filter operation. There are two main results of the paper: Firstly, the graphene filter is shown to be effective in adsorbing the above pollutant, with the additional feature of being fully renewable: all the pollutant can be removed from the filter without the need of costly physical or chemical processes. Secondly, monitoring of the time-evolution of the electrical impedance allows efficient detection of the different phases of the filter life cycle: clean, polluted, saturated and regenerated. This feature is of potential interest since it enables the predictive maintenance of such filters.

Purification and Nitrogen Doping of Nanothin Exfoliated Graphite Through RF Thermal Plasma Treatment

A mixture of nanothin exfoliated (NTE) graphite and urea (CO(NH₂)₂) powder was treated with radio frequency (RF) thermal plasma to achieve in situ purification and nitrogen doping of NTE graphite using the high-temperature flame of the RF plasma. Reactive species such as NH₃, NH₂, and HCNO generated by the thermolysis of urea play an important role in the purification and nitrogen doping of NTE graphite. The nitrogen content of NTE graphite subjected to plasma treatment increased by 5 times compared with that of raw NTE graphite. Three types of nitrogen species, namely, quaternary N, pyridinic N, and pyrrolic N, were observed after N doping with plasma treatment. The sheet resistance of N-doped NTE graphite reduced to 12-21% compared to that of the untreated NTE graphite, with the corresponding resistivity being ~7 × 10^-6 Ω m.

Ultrathin Graphene Intercalation in PEDOT:PSS/Colorless Polyimide-Based Transparent Electrodes for Enhancement of Optoelectronic Performance and Operational Stability of Organic Devices

A novel flexible transparent electrode (TE) having a trilayer-stacked geometry and high optoelectronic performance and operational stability was fabricated by the spin coating method. The trilayer was composed of an ultrathin graphene (Gr) film sandwiched between a transparent and colorless polyimide (TCPI) layer and a methanesulfonic acid (MSA)-treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer containing dimethylsulfoxide and Zonyl fluorosurfactant (designated as MSA-PDZ film). The introduction of solution-processable TCPI enabled the direct formation of high-quality graphene on organic surfaces with a clean interface. Stable doping of graphene with the MSA-PDZ film enabled tuning of the inherent work function and optoelectronic properties of the PEDOT:PSS films, leading to a high figure of merit of ∼70 in the as-fabricated TEs. Particularly, from multivariate and repetitive harsh environmental tests ( T = -50 to 90 °C, over 90 RH%), the TCPI/Gr heterostructure exhibited excellent tolerance to mechanical and thermal stresses and gas barrier properties that protected the MSA-PDZ film from exposure to moisture. Owing to the synergetic effect from the TCPI/Gr/MSA-PDZ anode structure, the TCPI/Gr/MSA-PDZ-based polymer light-emitting diodes showed highly improved current and power efficiencies with maxima as high as 20.84 cd/A and 22.92 lm/W, respectively (comparable to those of indium tin oxide based PLEDs), in addition to much enhanced mechanical flexibility.

Pulsed-grown graphene for flexible transparent conductors

In the race to find novel transparent conductors for next-generation optoelectronic devices, graphene is supposed to be one of the leading candidates, as it has the potential to satisfy all future requirements. However, the use of graphene as a truly transparent conductor remains a great challenge because its lowest sheet resistance demonstrated so far exceeds that of the commercially available indium tin oxide. The possible cause of low conductivity lies in its intrinsic growth process, which requires further exploration. In this work, I have approached this problem by controlling graphene nucleation during the chemical vapor deposition process as well as by adopting three distinct procedures, including bis(trifluoromethanesulfonyl)amide doping, post annealing, and flattening of graphene films. Additionally, van der Waals stacked graphene layers have been prepared to reduce the sheet resistance effectively. I have demonstrated an efficient and flexible transparent conductor with the extremely low sheet resistance of 40 Ω sq^-1, high transparency (T _r ∼90%), and high mechanical flexibility, making it suitable for electrode materials in future optoelectronic devices.

The Role of Graphene and Other 2D Materials in Solar Photovoltaics

2D materials have attracted considerable attention due to their exciting optical and electronic properties, and demonstrate immense potential for next-generation solar cells and other optoelectronic devices. With the scaling trends in photovoltaics moving toward thinner active materials, the atomically thin bodies and high flexibility of 2D materials make them the obvious choice for integration with future-generation photovoltaic technology. Not only can graphene, with its high transparency and conductivity, be used as the electrodes in solar cells, but also its ambipolar electrical transport enables it to serve as both the anode and the cathode. 2D materials beyond graphene, such as transition-metal dichalcogenides, are direct-bandgap semiconductors at the monolayer level, and they can be used as the active layer in ultrathin flexible solar cells. However, since no 2D material has been featured in the roadmap of standard photovoltaic technologies, a proper synergy is still lacking between the recently growing 2D community and the conventional solar community. A comprehensive review on the current state-of-the-art of 2D-materials-based solar photovoltaics is presented here so that the recent advances of 2D materials for solar cells can be employed for formulating the future roadmap of various photovoltaic technologies.

Graphene/Si Schottky solar cells: a review of recent advances and prospects

Graphene has attracted tremendous interest due to its unique physical and chemical properties. The atomic thickness, high carrier mobility and transparency make graphene an ideal electrode material which can be applied to various optoelectronic devices such as solar cells, light-emitting diodes and photodetectors. In recent years, there has been a growing interest in developing graphene/silicon Schottky junction solar cells and the power conversion efficiency has reached up to 15.8% with an incredible speed. In this review, we introduce the structure and mechanism of graphene/silicon solar cells briefly, and then summarize several key strategies to improve the performance of the cells. Finally, the challenges and prospects of graphene/silicon solar cells are discussed in the development of the devices in detail.

The structure and mechanism of graphene/silicon solar cells, and several key strategies to improve the performance of the cells.

UV-Epoxy-Enabled Simultaneous Intact Transfer and Highly Efficient Doping for Roll-to-Roll Production of High-Performance Graphene Films

Flexible graphene transparent conductive films (TCFs) prepared by chemical vapor deposition hold great promise for next-generation wearable optoelectronic devices, but the lack of low-cost scalable intact transfer and highly efficient doping greatly limits their commercialization. Here, we report a UV-epoxy adhesive as a robust multifunctional layer for the low-cost scalable production of high-performance flexible graphene TCF. Its high solvent stability, sufficient adhesion force, and conformal contact with graphene enable the intact bubbling transfer of graphene. More importantly, a highly strong and stable p-dopant, superacid HSbF₆, is in situ generated from UV-epoxy. HSbF₆ substantially increases the hole concentration of pristine graphene by more than 10 times and consequently reduces its sheet resistance by up to 95% with high stability. Furthermore, it can be readily integrated with the roll-to-roll transfer process. These features enable continuous production of graphene TCFs with overall performances superior to those produced by common transfer methods and typical dopants. As an example, we demonstrate the use of this film in the capacitive multitouch panel of tablet computers.

Bilayer graphene/HgCdTe based very long infrared photodetector with superior external quantum efficiency, responsivity, and detectivity

We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg1-x Cd x=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector. The unique absorption properties of graphene enable a long carrier lifetime of charge carriers contributing to the carrier-multiplication due to impact ionization and, hence, large photocurrent and high quantum efficiency. The proposed p+-BLG/n-Hg0.8133Cd0.1867Te photodetector is characterized and analyzed in terms of different electrical and optical characteristic parameters using computer simulations. The obtained results are further validated by developing an analytical model based on drift-diffusion, tunneling and Chu's methods. The photodetector has demonstrated a superior performance including improved dark current density (∼1.75 × 10-14 µA cm-2), photocurrent density (∼8.33 µA cm-2), internal quantum efficiency (QEint ∼ 99.49%), external quantum efficiency (QEext ∼ 89%), internal photocurrent responsivity (∼13.26 A W-1), external photocurrent responsivity (∼9.1 A W-1), noise equivalent power (∼8.3 × 10-18 W), total noise current (∼1.06 fA), signal to noise ratio (∼156.18 dB), 3 dB cut-off frequency (∼36.16 GHz), and response time of 9.4 ps at 77 K. Furthermore, the effects of different external biasing, light power intensity, and temperature are evaluated, suggesting a high QEext of 3337.70% with a bias of -0.5 V near room temperature.

Copper oxide-modified graphene anode and its application in organic photovoltaic cells

Graphene is an ideal substitute for indium tin oxide electrode in organic photovoltaic (OPV) devices, due to its outstanding electrical, optical, chemical and mechanical properties. However, the graphene electrode suffers from work function mismatch with common hole injection layer and intrinsic hydrophobic property. Here, Cu_xO is proposed to modify monolayer graphene in order to increase the work function of graphene (from 4.45 to 4.76 eV) and decrease the water contact angle (from 88° to 59°). Then, the OPV devices based on the Cu_xO modified graphene anode are fabricated successfully, and power conversion efficiency (PCE) is enhanced from 4.00 ± 0.44 to 5.23 ± 0.47%. Furthermore, the ternary blended polymer solar cell is fabricated by adding a small molecular material 1, 2, 5-thiadiazole-fused 12-ring polyaromatic hydrocarbon into the active layer, and the PCE is improved to 6.03 ± 0.53%, due to the enhanced absorption and depressed recombination inside the active layer.

Theoretical Study of Aluminum Hydroxide as a Hydrogen-Bonded Layered Material

In many layer-structured materials, constituent layers are bound through van der Waals (vdW) interactions. However, hydrogen bonding is another type of weak interaction which can contribute to the formation of multi-layered materials. In this work, we investigate aluminum hydroxide [Al(OH)3] having hydrogen bonding as an interlayer binding mechanism. We study the crystal structures and electronic band structures of bulk, single-layer, and multi-layer Al(OH)3 using density functional theory calculations. We find that hydrogen bonds across the constituent layers indeed give rise to interlayer binding stronger than vdW interactions, and a reduction of the band gap occurs for an isolated layer as compared to bulk Al(OH)3 which is attributed to the emergence of surface states. We also consider the alkali-halide intercalation between layers and examine how the intercalated atoms affect the atomic and electronic structures of Al(OH)3.

Extremely stable graphene electrodes doped with macromolecular acid

Although conventional p-type doping using small molecules on graphene decreases its sheet resistance (R_sh), it increases after exposure to ambient conditions, and this problem has been considered as the biggest impediment to practical application of graphene electrodes. Here, we report an extremely stable graphene electrode doped with macromolecular acid (perfluorinated polymeric sulfonic acid (PFSA)) as a p-type dopant. The PFSA doping on graphene provides not only ultra-high ambient stability for a very long time (> 64 days) but also high chemical/thermal stability, which have been unattainable by doping with conventional small-molecules. PFSA doping also greatly increases the surface potential (~0.8 eV) of graphene, and reduces its R_sh by ~56%, which is very important for practical applications. High-efficiency phosphorescent organic light-emitting diodes are fabricated with the PFSA-doped graphene anode (~98.5 cd A⁻¹ without out-coupling structures). This work lays a solid platform for practical application of thermally-/chemically-/air-stable graphene electrodes in various optoelectronic devices.

Chemical doping is a viable strategy to tune the electrical properties of pristine graphene, but suffers from stability issues. Here, the authors develop a macromolecular chemical doping approach that makes use of polymeric acid and provides high stability.

When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures

van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on-demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self-assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe₂ ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe₂ surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe₂ transistors. Because no dopant or special gas is used in the E-doping processes of MoTe₂ , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe₂ transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe₂ transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

A graphene mesh as a hybrid electrode for foldable devices

A graphene mesh with arrays of micro-holes was fabricated on a polymer substrate using photolithography for use as an electrode in flexible devices. The optimal mesh structure with high optical transmittance and electrical conductivity was designed using a finite element method, in which the conductivity of the mesh was simulated as a function of structure, size, and periodicity of the hole array. The sheet resistance of the graphene mesh was lowered to that of a graphene monolayer by chemical doping and found to be 330 Ω Sq^-1 at 98.5% transparency. The figure of merit of the doped graphene mesh was calculated to be 106 at 98% transmittance, a value that has not yet been reported for any conventional transparent electrode material. Due to strong bonding between the polymer and substrate, the hybrid electrode composed of a silver nanowire (AgNW)/graphene mesh coated with an over-coating layer exhibited more stable electrical characteristics during mechanical fatigue deformation compared to a hybrid film composed of a AgNW/graphene sheet. The AgNW/graphene sheet underwent breakdown at less than 20 000 cycles in cyclic bending tests with 6.5% strain, but the AgNW/graphene mesh showed a 38% increase in resistance at 20 000 cycles and no breakdown even at 100 000 cycles. Therefore, in this study, we propose a hybrid structure composed of a AgNW/graphene mesh, which is optically and mechanically superior to AgNW/graphene sheets, and therefore suitable for application as a transparent electrode in foldable devices with long-term stability.

Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion

This review provides a systematic overview of the integration, surface, and interfacial engineering of 2D/3D and 2D/2D homo/heterojunctions for PV and PEC applications.

Large-area potassium-doped highly conductive graphene films for electromagnetic interference shielding

As promising carbonaceous films, graphene films (GF) have exhibited many remarkable mechanical and electrical/thermal properties of great potential for wide functional applications. However, the electrical conductivity of GF still needs to be improved and the limitation lies in the low carrier density of pure graphene. Here, we presented a post-doping method for large-area potassium doped graphene films (GF-K) and promoted the electrical conductivity of GF approaching benchmark metals. The macroscopic-assembled GF-K shows a similar color to graphite intercalation compounds. The potassium doping increased the carrier density of the GF without undermining the electronic quality of the graphene unit. The doping concentration was optimized to prepare stage-2 GF-K (C₂₄K) with the highest electrical conductivity (1.49 × 10⁷ S m^-1), holding merits of low density (1.63 g cm^-3), and high flexibility. Doped GF with better specific electrical conductivity than copper showed outstanding electromagnetic interference shielding performance. Shielding effectiveness (SE) increased from 70-85 dB for graphene film (GF) to over 130 dB for GF-K only at 31 μm thickness, which is among the best SEs in previous reports. The combination of high specific conductivity, mechanical flexibility, high EMI SE, light weight, and facile productivity enables GF-K to be promising in many high-end EMI applications such as aerospace and wearable devices.

Transparent Conducting Graphene Hybrid Films To Improve Electromagnetic Interference (EMI) Shielding Performance of Graphene

Conducting graphene-based hybrids have attracted considerable attention in recent years for their scientific and technological significance in many applications. In this work, conductive graphene hybrid films, consisting of a metallic network fully encapsulated between monolayer graphene and quartz-glass substrate, were fabricated and characterized for their electromagnetic interference shielding capabilities. Experimental results show that by integration with a metallic network the sheet resistance of graphene was significantly suppressed from 813.27 to 5.53 Ω/sq with an optical transmittance at 91%. Consequently, the microwave shielding effectiveness (SE) exceeded 23.60 dB at the K_u-band and 13.48 dB at the K_a-band. The maximum SE value was 28.91 dB at 12 GHz. Compared with the SE of pristine monolayer graphene (3.46 dB), the SE of graphene hybrid film was enhanced by 25.45 dB (99.7% energy attenuation). At 94% optical transmittance, the sheet resistance was 20.67 Ω/sq and the maximum SE value was 20.86 dB at 12 GHz. Our results show that hybrid graphene films incorporate both high conductivity and superior electromagnetic shielding comparable to existing ITO shielding modalities. The combination of high conductivity and shielding along with the materials' earth-abundant nature, and facile large-scale fabrication, make these graphene hybrid films highly attractive for transparent EMI shielding.

Increasing the doping efficiency by surface energy control for ultra-transparent graphene conductors

Graphene’s attractiveness in many applications is limited by its high resistance. Extrinsic doping has shown promise to overcome this challenge but graphene’s performance remains below industry requirements. This issue is caused by a limited charge transfer efficiency (CTE) between dopant and graphene. Using AuCl₃ as a model system, we measure CTE as low as 5% of the expected values due to the geometrical capacitance of small adsorbate clusters. We here demonstrate a strategy for enhancing the CTE by a two-step optimization of graphene’s surface energy prior to AuCl₃ doping. First, exposure to UV ozone modified the hydrophilicity of graphene and was found to decrease the cluster’s geometric capacitance, which had a direct effect on the CTE. Occurrence of lattice defects at high UV exposure, however, deteriorated graphene’s transport characteristics and limited the effectiveness of this pretreatment step. Thus, prior to UV exposure, a functionalized polymer layer was introduced that could further enhance graphene’s surface energy while protecting it from damage. Combination of these treatment steps were found to increase the AuCl₃ charge transfer efficiency to 70% and lower the sheet resistance to 106 Ω/γ at 97% transmittance which represents the highest reported performance for doped single layer graphene and is on par with commercially available transparent conductors.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm². Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m⁻² that can already satisfy the requirements for lighting sources and displays.

Ultraclean and damage-free transfer of graphene over large areas is crucial for the future development of flexible electronics and optoelectronics. Using a rosin-assisted method, the authors transfer graphene with an ultraclean surface and uniform small sheet resistance—a 4-inch monolithic organic light-emitting diode is demonstrated.

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

Human-Like Sensing and Reflexes of Graphene-Based Films

Humans have numerous senses, wherein vision, hearing, smell, taste, and touch are considered as the five conventionally acknowledged senses. Triggered by light, sound, or other physical stimulations, the sensory organs of human body are excited, leading to the transformation of the afferent energy into neural activity. Also converting other signals into electronical signals, graphene-based film shows its inherent advantages in responding to the tiny stimulations. In this review, the human-like senses and reflexes of graphene-based films are presented. The review starts with the brief discussions about the preparation and optimization of graphene-based film, as where as its new progress in synthesis method, transfer operation, film-formation technologies and optimization techniques. Various human-like senses of graphene-based film and their recent advancements are then summarized, including light-sensitive devices, acoustic devices, gas sensors, biomolecules and wearable devices. Similar to the reflex action of humans, graphene-based film also exhibits reflex when under thermal radiation and light actuation. Finally, the current challenges associated with human-like applications are discussed to help guide the future research on graphene films. At last, the future opportunities lie in the new applicable human-like senses and the integration of multiple senses that can raise a revolution in bionic devices.

Foldable Thermoelectric Materials: Improvement of the Thermoelectric Performance of Directly Spun CNT Webs by Individual Control of Electrical and Thermal Conductivity

We suggest the fabrication of foldable thermoelectric (TE) materials by embedding conducting polymers into Au-doped CNT webs. The CNT bundles, which are interconnected by a direct spinning method to form 3D networks without interfacial contact resistance, provide both high electrical conductivity and high carrier mobility. The ZT value of the spun CNT web is significantly enhanced through two simple processes. Decorating the porous CNT webs with Au nanoparticles increases the electrical conductivity, resulting in an optimal ZT of 0.163, which represents a more than 2-fold improvement compared to the ZT of pristine CNT webs (0.079). After decoration, polyaniline (PANI) is integrated into the Au-doped CNT webs both to improve the Seebeck coefficient by an energy-filtering effect and to decrease the thermal conductivity by the phonon-scattering effect. This leads to a ZT of 0.203, which is one of the highest ZT values reported for organic TE materials. Moreover, Au-doped CNT/PANI web is ultralightweight, free-standing, thermally stable, and mechanically robust, which makes it a viable candidate for a hybrid TE conversion device for wearable electronics. When a 20 K temperature gradient is applied to the TE module consisting of seven p-n couples, 1.74 μW of power is generated.

Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors

Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.

Photo-Promoted Platinum Nanoparticles Decorated MoS2@Graphene Woven Fabric Catalyst for Efficient Hydrogen Generation

Hydrogen production from water splitting has been considered as an effective and sustainable method to solve future energy related crisis. Molybdenum sulfides (e.g., MoS2) show promising catalytic ability in hydrogen evolution reaction (HER). Combining MoS2 with conductive carbon-based materials has aroused tremendous research interest recently. In this work, a highly efficient multiple-catalyst is developed for HER by decorating Pt nanoparticles (Pt NPs) on MoS2@graphene protected nickel woven fabrics (NiWF) substrate, which comprises the following components: (i) Graphene protected NiWF acts as the underlying substrate, supporting the whole structure; (ii) MoS2 nanoplates serve as a central and essential photosensitive component, forming a heterostructure with graphene simultaneously; and (iii) on the basis of the intrinsic photoluminescence effect of MoS2, together with the photoelectric response at the MoS2/graphene interface, Pt NPs are successfully deposited on the whole structure under illumination. Particularly and foremost, this work emphasizes on discussion and verification of the underlying mechanism for photopromoted electroless Pt NPs deposition. Due to this assembly approach, the usage amount of Pt is controlled at ∼5 wt % (∼0.59 at. %) with respect to the whole catalyst. MoS2@Substrate with Pt NPs deposited under 643 nm illumination, with the synergistic effect of MoS2 active sites and Pt NPs, demonstrates the most superior electrocatalytic performance, with negligible overpotential and low Tafel slope of 39.4 mV/dec.

Chemically Conjugated Carbon Nanotubes and Graphene for Carrier Modulation

Nanocarbons such as fullerene and carbon nanotubes (CNT) in late 20th century have blossomed nanoscience and nanotechnology in 21st century, which have been further proliferated by the new finding of graphene and have indeed opened a new carbon era. Several new branches of research, for example, zero-dimensional nanoparticles, one-dimensional nanowires, and two-dimensional insulating hexagonal boron nitride, and semiconducting and metallic transition metal dichalcogenides including the recently emerging black phosphorus, have been explored and numerous unprecedented quantum mechanical features have been revealed, that have been hardly accessible otherwise. Extensive research has been done on devices and applications related to such materials. Many experimental instruments have been developed with high sensitivity and improved spatial and temporal resolution to detect such tiny objects. The need for multidisciplinary research has been growing stronger than ever, which will be the tradition in the next few decades. In this Account, we will demonstrate an example of multidisciplinary effort of utilizing CNTs and graphene for electronics by modulating electronic structures. While there are several methods of modifying electronic structures of nanocarbons such as gate bias, contact metal, and conventional substitutional doping, we focus on chemical doping approaches here. We first introduce the concept of chemical doping on CNTs and graphene in terms of electronegativity of molecules and electrochemical potential of CNTs and graphene. To understand the relationship of electrochemical potential of CNTs and graphene to electronegativity of molecules, we propose a simple water bucket model: how to fill or drain water (electrons in CNTs or graphene) in the bucket (density of states) by the chemical dopants. The doping concept is then demonstrated experimentally by tracking the absorption spectroscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Raman spectroscopy, transmittance, and transport measurements and by relating them to the reduction potential of molecules relative to that of CNTs or graphene. Two effects of chemical doping in electronics, transparent conducting films, and field effect transistors are extensively discussed. One critical issue, the stability of chemical dopants under ambient conditions, is further discussed. We believe that the presented doping concept will be useful tools for other low dimensional materials such as recently emerging transition metal dichalcogenides and black phosphorus.

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS2 on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS2 and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS2, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). The electronic nature of the MoS2/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ∼0.4 eV at the monolayer MoS2 edges.

Influence of Substrate Microstructure on the Transport Properties of CVD-Graphene

We report the study of electrical transport in few-layered CVD-graphene located on nanostructured surfaces in view of its potential application as a transparent contact to optoelectronic devices. Two specific surfaces with a different characteristic feature scale are analyzed: semiconductor micropyramids covered with SiO2 layer and opal structures composed of SiO2 nanospheres. Scanning tunneling microscopy (STM) and scanning electron microscopy (SEM), as well as Raman spectroscopy, have been used to determine graphene/substrate surface profile. The graphene transfer on the opal face centered cubic arrangement of spheres with a diameter of 230 nm leads to graphene corrugation (graphene partially reproduces the opal surface profile). This structure results in a reduction by more than 3 times of the graphene sheet conductivity compared to the conductivity of reference graphene located on a planar SiO2 surface but does not affect the contact resistance to graphene. The graphene transfer onto an organized array of micropyramids results in a graphene suspension. Unlike opal, the graphene suspension on pyramids leads to a reduction of both the contact resistance and the sheet resistance of graphene compared to resistance of the reference graphene/flat SiO2 sample. The sample annealing is favorable to improve the contact resistance to CVD-graphene; however, it leads to the increase of its sheet resistance.

Wide-range work-function tuning of active graphene transparent electrodes via hole doping

A novel strategy for preparing active transparent conductive electrodes by doping LBL-stacked graphene with AuCl₃, successfully achieving an extremely wide range of work-function tunability of up to ~1.5 eV.

Scalable production of graphene with tunable and stable doping by electrochemical intercalation and exfoliation

Electrochemical intercalation and exfoliation produces graphene with a finely tunable work function between 4.8 eV and 5.2 eV which enables a threefold increase in the performance of graphene electrodes.

Self-deposition of Pt nanoparticles on graphene woven fabrics for enhanced hybrid Schottky junctions and photoelectrochemical solar cells

A hybrid Schottky junction and solid state photoelectrochemical graphene-on-silicon solar cell is designed and evaluated, and it shows impressive power conversion efficiencies of >10%.

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.