NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

Two-dimensional material assisted-growth strategy: new insights and opportunities

The exploration and synthesis of novel materials are integral to scientific and technological progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is expected to play an important role in the application of industrialization and the information age, resulting from its excellent physical and chemical properties. Currently, researchers have effectively utilized a range of material synthesis techniques, including mechanical exfoliation, redox reactions, chemical vapor deposition, and chemical vapor transport, to fabricate two-dimensional materials. However, despite their rapid development, the widespread industrial application of 2D materials faces challenges due to demanding synthesis requirements and high costs. To address these challenges, assisted growth techniques such as salt-assisted, gas-assisted, organic-assisted, and template-assisted growth have emerged as promising approaches. Herein, this study gives a summary of important developments in recent years in the assisted growth synthesis of 2D materials. Additionally, it highlights the current difficulties and possible benefits of the assisted-growth approach for 2D materials. It also highlights novel avenues of development and presents opportunities for new lines of investigation.

Synthesis of 2D PtSe2 Nanolayers on Glass Substrates and Their Integration in Near-Infrared Light Shutters

PtSe2 has asserted its key role among the emerging 2D transition metal dichalcogenides, however, its simplified growth process with controlled number of layers, high crystalline quality, and on inexpensive substrates is still challenging. Here, we report the synthesis details of PtSe2 layers on soda lime glass substrates by selenization of predeposited Pt layers using the thermally assisted conversion method at atmospheric pressure. PtSe2 syntheses are confirmed by X-ray photoelectron spectroscopy and Raman analysis. The layers were further investigated with transmission electron microscopy and optical ellipsometry, revealing the thickness and its dependence on the metal precursor sputtering time. Finally, the integration of PtSe2 as transparent conductive layers in polymer-dispersed liquid crystal structures operating as near-infrared light shutters is demonstrated and device performance is discussed. The proposed simple and inexpensive synthesis approach opens up new directions toward PtSe2 potential technological applications, including ITO-free optoelectronics.

Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution

In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials. In this review, we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional, one-dimensional and two-dimensional TMC materials. The effects of substituting elements, substitution ratios, and substitution positions on the structures and morphologies of resulting material are discussed. The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided, emphasizing the role of atomic substitution in achieving these advancements. Finally, challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.

Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning

Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) and the application of a semantic segmentation convolutional neural network (CNN) to accurately and rapidly identify thicknesses of MoS2 flakes. A second CNN model is trained to provide precise predictions on the twist angle of CVD-grown bilayer flakes. This model harnessed a data set comprising over 10,000 synthetic images, encompassing geometries spanning from hexagonal to triangular shapes. Subsequent validation of the deep learning predictions on twist angles was executed through the second harmonic generation and Raman spectroscopy. Our results introduce a scalable methodology for automated inspection of twisted atomically thin CVD-grown bilayers.

Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications

The discovery of graphene ignites a great deal of interest in the research and advancement of two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical and optoelectronic properties. Tungsten disulfide (WS2) is a TMDC with intriguing properties, such as biocompatibility, tunable bandgap, and outstanding photoelectric characteristics. These features make it a potential candidate for chemical sensing, biosensing, and tumor therapy. Despite the numerous reviews on the synthesis and application of TMDCs in the biomedical field, no comprehensive study still summarizes and unifies the research trends of WS2 from synthesis to biomedical applications. Therefore, this review aims to present a complete and thorough analysis of the current research trends in WS2 across several biomedical domains, including biosensing and nanomedicine, covering antibacterial applications, tissue engineering, drug delivery, and anticancer treatments. Finally, this review also discusses the potential opportunities and obstacles associated with WS2 to deliver a new outlook for advancing its progress in biomedical research.

Dual Catalytic and Self-Assembled Growth of Two-Dimensional Transition Metal Dichalcogenides Through Simultaneous Predeposition Process

The recent introduction of alkali metal halide catalysts for chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) has enabled remarkable two-dimensional (2D) growth. However, the process development and growth mechanism require further exploration to enhance the effects of salts and understand the principles. Herein, simultaneous predeposition of a metal source (MoO₃ ) and salt (NaCl) by thermal evaporation is adopted. As a result, remarkable growth behaviors such as promoted 2D growth, easy patterning, and potential diversity of target materials can be achieved. Step-by-step spectroscopy combined with morphological analyses reveals a reaction path for MoS₂ growth in which NaCl reacts separately with S and MoO₃ to form Na₂ SO₄ and Na₂ Mo₂ O₇ intermediates, respectively. These intermediates provide a favorable environment for 2D growth, including an enhanced source supply and liquid medium. Consequently, large grains of monolayer MoS₂ are formed by self-assembly, indicating the merging of small equilateral triangular grains on the liquid intermediates. This study is expected to serve as an ideal reference for understanding the principles of salt catalysis and evolution of CVD in the preparation of 2D TMDs.

Vapor-Liquid-Solid Growth of Site-Controlled Monolayer MoS2 Films Via Pressure-Induc ed Supercritical Phase Nucleation

In this study, a novel pressure-induced supercritical phase nucleation method is proposed to synthesize monolayer MoS₂ films, which is promoter free and can avoid contamination of films derived from these heterogeneous promoters in most of the existing techniques. The low-crystallinity and size-controlled MoO₂(acac)₂ particles are recrystallized on the substrate via the pressure-sensitive solvent capacity of supercritical CO₂ and these particles are used as growth sites. The size of single-crystal MoS₂ on the substrate is found to be dependent on the wetting area of the pyrolyzed precursor droplets (MoO₂) on the surface, and the formation of continuous films with high coverage is mainly controlled by the coalescence of MoO₂ droplets. It is enhanced by the increase of the nucleation site density, which can be adjusted by the supersaturation of the supercritical fluid solution. Our findings pave a new way for the controllable growth of MoS₂ and other two-dimensional materials and provide sufficient and valuable evidence for vapor-liquid-solid growth.

A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets

Low-dimensional group IV-VI metal chalcogenide-based semiconductors hold great promise for opto-electronic device applications owing to their diverse crystalline phases and intriguing properties related to thermoelectric and ferroelectric effects. Herein, we demonstrate a universal chemical vapor deposition (CVD) growth method to synthesize stable germanium chalcogenide-based (GeS, GeS₂, GeSe, GeSe₂) nanosheets, which increases the library of the p-type semiconductor. The phase transition between different crystalline polytypes can be deterministically controlled by hydrogen concentration in the reaction chamber. Structural characterization and synthesis experiments identify the behavior, where the higher hydrogen concentration promotes the transiton from germanium dichalcogenides to germanium monochalcogenides. The angle-polarized and temperature-dependent Raman spectra demonstrate the strong interlayer coupling and lattice orientation. Based on the optimized growth scheme and systematic comparison of electrical properties, GeSe nanosheet photodetectors were demonstrated, which exhibit superior device performance on SiO₂/Si and HfO₂/Si substrate with a high photoresponsivity up to 10⁴ A W^-1, fast response time less than 15 ms, and high mobility of 3.2 cm² V^-1 s^-1, which is comparable to the mechanically exfoliated crystals. Our results manifest the hydrogen-mediated deposition strategy as a facile control knob to engineer crystalline phases of germanium chalcogenides for high performance optoelectronic devices.

Advanced Polymeric Nanocomposite Membranes for Water and Wastewater Treatment: A Comprehensive Review

Nanomaterials have been extensively used in polymer nanocomposite membranes due to the inclusion of unique features that enhance water and wastewater treatment performance. Compared to the pristine membranes, the incorporation of nanomodifiers not only improves membrane performance (water permeability, salt rejection, contaminant removal, selectivity), but also the intrinsic properties (hydrophilicity, porosity, antifouling properties, antimicrobial properties, mechanical, thermal, and chemical stability) of these membranes. This review focuses on applications of different types of nanomaterials: zero-dimensional (metal/metal oxide nanoparticles), one-dimensional (carbon nanotubes), two-dimensional (graphene and associated structures), and three-dimensional (zeolites and associated frameworks) nanomaterials combined with polymers towards novel polymeric nanocomposites for water and wastewater treatment applications. This review will show that combinations of nanomaterials and polymers impart enhanced features into the pristine membrane; however, the underlying issues associated with the modification processes and environmental impact of these membranes are less obvious. This review also highlights the utility of computational methods toward understanding the structural and functional properties of the membranes. Here, we highlight the fabrication methods, advantages, challenges, environmental impact, and future scope of these advanced polymeric nanocomposite membrane based systems for water and wastewater treatment applications.

NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS2 Crystals Using Confined-Space CVD

Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS₂) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS₂ remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS₂ in a controlled manner. Herein, we report the large-scale growth of MoS₂ with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS₂ are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS₂ are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS₂ show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS₂ and opens the way for its various optoelectronic and electronic applications.

Molten-droplet-driven growth of MoS2 flakes with controllable morphology transition for hydrogen evolution reactions

The controllable fabrication of two-dimensional transition-metal dichalcogenides (2D TMDs) and a deep understanding of the corresponding process mechanisms are of fundamental importance for their further applications. In this study, the molten-droplet-driven (MDD) growth of MoS₂ based on a Na-Mo-O molten-salt chemical vapor deposition (CVD) method is demonstrated via temperature-dependent dispersion and spreading of droplets on a surface, yielding MoS₂ flakes with morphology transition from compact triangles to fractal dendrites with the increase in temperature. By building up the dependence between the formed morphologies of grown MoS₂ flakes and the corresponding kinetics during successive growth processes, it was found that the wetting-driven force, which is governed by interface free energies (surface tension) of molten droplets, would largely determine the driven movement of the droplet, and then the formation of different morphologies. Finally, based on these MoS₂ flakes, a systematic improvement of the hydrogen evolution reaction (HER) was demonstrated in accordance with the evolution of morphologies from compact to fractal. This study presents an important advance in understanding the growth mechanisms related to the molten-salt-assisted CVD fabrication of 2D TMDs and provides a facile method for tailoring the growth and application of 2D TMDs with controllably trimmed morphologies.

Nanoampere-Level Piezoelectric Energy Harvesting Performance of Lithography-Free Centimeter-Scale MoS2 Monolayer Film Generators

2D transition-metal dichalcogenides have been reported to possess piezoelectricity due to their lack of inversion symmetry; thus, they are potentially applicable as electromechanical energy harvesters. Herein, the authors propose a lithography-free piezoelectric energy harvester composed of centimeter-scale MoS₂ monolayer films with an interdigitated electrode pattern that is enabled only by the large scale of the film. High-quality large-scale synthesis of the monolayer films is conducted by low-pressure chemical vapor deposition with the assistance of an unprecedented Na₂ S promoter. The extra sulfur supplied by Na₂ S critically passivates the sulfur vacancies. The energy harvester having a large active area of ≈18.3 mm² demonstrates an unexpectedly high piezoelectric energy harvesting performance of ≈400.4 mV and ≈40.7 nA under a bending strain of 0.57%, with the careful adjustment of side electrodes along the zigzag atomic arrays in the two dominant domain structure. Nanoampere-level harvesting has not yet been reported with any 2D material-based harvester.

Artificial Neuron Networks Enabled Identification and Characterizations of 2D Materials and van der Waals Heterostructures

Two-dimensional (2D) materials and their in-plane and out-of-plane (i.e., van der Waals, vdW) heterostructures are promising building blocks for next-generation electronic and optoelectronic devices. Since the performance of the devices is strongly dependent on the crystalline quality of the materials and the interface characteristics of the heterostructures, a fast and nondestructive method for distinguishing and characterizing various 2D building blocks is desirable to promote the device integrations. In this work, based on the color space information on 2D materials' optical microscopy images, an artificial neural network-based deep learning algorithm is developed and applied to identify eight kinds of 2D materials with accuracy well above 90% and a mean value of 96%. More importantly, this data-driven method enables two interesting functionalities: (1) resolving the interface distribution of chemical vapor deposition (CVD) grown in-plane and vdW heterostructures and (2) identifying defect concentrations of CVD-grown 2D semiconductors. The two functionalities can be utilized to quickly identify sample quality and optimize synthesis parameters in the future. Our work improves the characterization efficiency of atomically thin materials and is therefore valuable for their research and applications.

A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.

Spontaneous n-Doping in Growing Monolayer MoS2 by Alkali Metal Compound-Promoted CVD

Monolayer MoS₂ has emerged as one of the most promising candidate materials for future semiconductor devices because of its fascinating physical properties and optoelectronic performance. Recently, the utilization of alkali metal compounds as promoters in CVD growth has been demonstrated to be a facile strategy for growing monolayer MoS₂ and other 2D TMDs with large domain sizes. In this work, we systematically investigated the residues derived from alkali metal compounds and the spontaneous n-doping effect on monolayer MoS₂ in alkali metal compound-promoted CVD growth. When using NaOH and other alkali metal compounds as promoters, it is found that the Raman peak of the A_1g mode red shifted with a broadening width and the PL intensity of the A peak decreased with a red shift, which was attributed to the spontaneous n-doping effect during growth. Moreover, the growth using varying amounts of NaOH promoter suggests that the n-doping level could be controlled by the amount of promoter. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectroscopy (TOF-SIMS) showed the existence of cation-derived residues in the form of a Na-O cluster physiosorbed on top of monolayer MoS₂, which was also confirmed by the transfer experiment. The NaOH treatment experiment and density functional theory (DFT) calculations demonstrate that sodium hydroxide clusters, which could be converted from a combination of Na-O clusters and water vapor, could produce an n-doping effect on monolayer MoS₂. This study provides a facile route to controllably grow monolayer 2D materials with a desired doping level without further treatment.

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films

Though the positive role of alkali halides in realizing large area growth of transition metal dichalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS₂morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS₂. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS₂film growth assisted by NaCl results in ≈81% of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS₂monolayers. No evidence of alkali or halogen atoms were found in the composition analysis of the films. On the basis of Raman spectroscopy and photoluminescence measurements, the MoS₂films were found to be of good crystalline quality.

Interfaces determine the nucleation and growth of large NbS2 single crystals

The synthesis of large NbS₂ single crystals benefits from Na–Nb–O droplet interfaces, which reduces nucleation density and increases growth rate.

Synthesis and characterization of WS2/graphene/SiC van der Waals heterostructures via WO3-x thin film sulfurization

Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS2 was grown on epitaxial graphene on SiC by sulfurization of WO3-x thin films deposited directly onto the substrate. Using this method, WS2 growth was achieved at temperatures as low as 700 °C - significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth.

Sub-millimeter size high mobility single crystal MoSe2 monolayers synthesized by NaCl-assisted chemical vapor deposition

Monolayer MoSe₂ is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe₂ films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe₂ monolayers with mobilities ranging from 38 to 8 cm² V⁻¹ s⁻¹. The average mobility is 12 cm² V⁻¹ s⁻¹. We further determine that the optical responsivity of monolayer MoSe₂ is 42 mA W⁻¹, with an external quantum efficiency of 8.22%.

Sub-millimeter single crystal MoSe₂ monolayers with a mobility of 38 cm² V⁻¹ s⁻¹ and responsivity of 42 mA W⁻¹ were synthesized by NaCl-assisted chemical vapor deposition.

Recent Developments of Electrochemical and Optical Biosensors for Antibody Detection

Detection of biomarkers has raised much interest recently due to the need for disease diagnosis and personalized medicine in future point-of-care systems. Among various biomarkers, antibodies are an important type of detection target due to their potential for indicating disease progression stage and the efficiency of therapeutic antibody drug treatment. In this review, electrochemical and optical detection of antibodies are discussed. Specifically, creating a non-label and reagent-free sensing platform and construction of an anti-fouling electrochemical surface for electrochemical detection are suggested. For optical transduction, a rapid and programmable platform for antibody detection using a DNA-based beacon is suggested as well as the use of bioluminescence resonance energy transfer (BRET) switch for low cost antibody detection. These sensing strategies have demonstrated their potential for resolving current challenges in antibody detection such as high selectivity, low operation cost, simple detection procedures, rapid detection, and low-fouling detection. This review provides a general update for recent developments in antibody detection strategies and potential solutions for future clinical point-of-care systems.

Gas-Source CVD Growth of Atomic Layered WS2 from WF6 and H2S Precursors with High Grain Size Uniformity

Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS₂ using the gaseous precursors WF₆ and H₂S, augmented by the Na-assistance method. When Na was present during growth, the process created triangle-shaped WS₂ crystals that were 10 μm in size and exhibited semiconducting characteristics. By contrast, the Na-free growth of WS₂ resulted in a continuous film with metallic behaviour. These results clearly demonstrate that alkali-metal assistance is valid even in applications of gas-source CVD without oxygen-containing species, where intermediates comprising Na, W, and S can play an important role. We observed that the WS₂ crystals grown by gas-source CVD exhibited a narrow size distribution when compared with crystals grown by conventional solid-source CVD, indicating that the crystal nucleation occurred almost simultaneously across the substrate, and that uniform lateral growth was dominant afterwards. This phenomenon was attributed to the suppression of inhomogeneous nucleation through the fast and uniform diffusion of the gas-phase precursors, supported by the Na-assisted suppression of the fast reactions between WF₆ and H₂S.

Vertical Stacking of Copper Sulfide Nanoparticles and Molybdenum Sulfide Nanosheets for Enhanced Nonlinear Absorption

The construction of p-n junctions is necessitated by applications which require effective charge separation. Here, a novel heterostructure (HS) of molybdenum sulfide (MoS₂) and copper sulfide (Cu_2-xS) was synthesized by chemical vapor deposition, with Cu_2-xS nanoparticles vertically stacked on a MoS₂ nanosheet. A well-defined epitaxial relationship between MoS₂ and Cu_2-xS is established, although the corresponding lattice mismatch is as large as 20%. The band-edge alignment is experimentally determined, indicating that the MoS₂-Cu_2-xS HS is a type II heterojunction. Photoluminescence quenching indicates effective charge separation in HS. The resultant HS shows enhanced nonlinear absorption in comparison with single-component MoS₂ nanosheets and Cu_2-xS nanoparticles.

CVD controlled growth of large-scale WS2 monolayers

Monolayer tungsten disulfide (WS₂) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics. However, it remains challenging to successfully prepare monolayer WS₂. In this paper, we report the chemical vapor deposition (CVD) growth behavior of hexagonal WS₂ monolayers by using WS₂ powders and sodium triosulfate (Na₂S₂O₃) as precursors. We observed the Na₂S₂O₃ has a significant effect on the WS₂ triangular and leaf-like shapes. In addition, based on proposed S-termination and W-termination theory, the growth mechanisms for different shapes of WS₂ were discussed.

Monolayer tungsten disulfide (WS₂) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics.

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)₂ atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates

The fabrication of large-area single crystalline monolayer transition metal dichalcogenides (TMDs) is essential for a range of electric and optoelectronic applications. Chemical vapor deposition (CVD) is a promising method to achieve this goal by employing orientation control or alignment along the crystalline lattice of the substrate such as sapphire. On the other hand, a fundamental understanding of the aligned-growth mechanism of TMDs is limited. In this report, we show that the controlled introduction of H2 during the CVD growth of MoSe2 plays a vital role in the step-edge aligned nucleation on a c-sapphire (0001) substrate. In particular, the MoSe2 domains nucleate along the [112[combining macron]0] step-edge orientation by flowing H2 subsequent to pure Ar. Systematic studies, including the H2 introduction time, flow rate, and substrate temperature, suggest that the step-edge aligned nucleation of MoSe2 can be controlled by the hydrogen concentration on the sapphire substrate. These results offer important insights into controlling the epitaxial growth of 2D materials on a crystalline substrate.

Employing a Bifunctional Molybdate Precursor To Grow the Highly Crystalline MoS2 for High-Performance Field-Effect Transistors

Growth of the large-sized and high-quality MoS₂ single crystals for high-performance low-power electronic applications is an important step to pursue. Despite the significant improvement made in minimizing extrinsic MoS₂ contact resistance based on interfacial engineering of the devices, the electron mobility of field-effect transistors (FETs) made of a synthetic monolayer MoS₂ is yet far below the expected theoretical values, implying that the MoS₂ crystal quality needs to be further improved. Here, we demonstrate the high-performance two-terminal MoS₂ FETs with room-temperature electron mobility up to ∼90 cm² V^-1 s^-1 based on the sulfurization growth of the bifunctional precursor, sodium molybdate dihydrate. This unique transition-metal precursor, serving as both the crystalline Mo source and seed promotor (sodium), could facilitate the lateral growth of the highly crystalline monolayer MoS₂ crystals (edge length up to ∼260 μm). Substrate surface treatment with oxygen plasma prior to the deposition of the Mo precursor is fundamental to increase the wettability between the Mo source and the substrate, promoting the thinning and coalescence of the source clusters during the growth of large-sized MoS₂ single crystals. The control of growth temperature is also an essential step to grow a strictly monolayer MoS₂ crystal. A proof-of-concept for thermoelectric device integration utilizing monolayer MoS₂ sheds light on its potential in low-voltage and self-powered electronics.

Ultrafast Monolayer In/Gr-WS2-Gr Hybrid Photodetectors with High Gain

One of the primary limitations of previously reported two-dimensional (2D) photodetectors is a low frequency response (≪ 1 Hz) for sensitive devices with gain. Yet, little efforts have been devoted to improve the temporal response of photodetectors while maintaining high gain and responsivity. Here, we demonstrate a gain of 6.3 × 10³ electrons per photon and a responsivity of 2.6 × 10³ A/W while simultaneously exhibiting an ultrafast response time of 40-65 μs in a hybrid photodetector that consists of graphene-WS₂-graphene junctions covered with indium (In) adatoms atop. The resultant responsivity is 6 orders of magnitude higher than that of conventional photodetectors comprising solely of a Au-WS₂-Au junction. The photogain is provided mainly by the adsorbed In adatoms, from which photogenerated electrons can be transferred to the WS₂ channel, while holes remain trapped in In adatoms, leading to a photogating effect as electrons are recirculating during the residence of holes in In adatoms. At a gate voltage near the Dirac point of graphene, a detectivity of D* = 2.2 × 10¹² Jones and an ON/OFF ratio of 10⁴ are achieved. The enhanced performance of the device can be attributed partly to the transparent graphene/WS₂ contact and partly to the strong capacitive coupling of the In adatoms with the WS₂ channel, which enables ultrafast carrier dynamics.

Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures

Transition-metal dichalcogenides in the 1T phase have been a subject of increasing interest, which is partly due to their fascinating physical properties and partly to their potential applications in the next generation of electronic devices, including supercapacitors, electrocatalytic hydrogen evolution, and phase-transition memories. The primary method for obtaining 1T WS₂ or MoS₂ has been using ion intercalation in combination with solution-based exfoliation. The resulting flakes are small in size and tend to aggregate upon deposition, forming an intercalant-TMD complex with small 1T and 1T' patches embedded in the 2H matrix. Existing growth methods have, however, produced WS₂ or MoS₂ solely in the 2H phase. Here, we have refined the growth approach to obtain monolayer 1T WS₂ up to 80 μm in size based on chemical vapor deposition. With the aid of synergistic catalysts (iron oxide and sodium chloride), 1T WS₂ can nucleate in the infant stage of the growth, forming special butterfly-like single crystals with the 1T phase in one wing and the 2H phase in the other. Distinctive types of phase boundaries are discovered at the 1T-2H interface. The 1T structure thus grown is thermodynamically stable over time and even persists at a high temperature above 800 °C, allowing for a stepwise edge epitaxy of lateral 1T heterostructures. Atomic images show that the 1T WS₂-MoS₂ heterojunction features a coherent and defectless interface with a sharp atomic transition. The stable 1T phase represents a missing piece of the puzzle in the research of atomic thin van der Waals crystals, and our growth approach provides an accessible way of filling this gap.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

van der Waals Layered Materials: Opportunities and Challenges

Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.

Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers

As one of the most important family members of two-dimensional (2D) materials, the growth and damage-free transfer of transition metal dichalcogenides (TMDs) play crucial roles in their future applications. Here, we report a damage-free and highly efficient approach to transfer single and few-layer 2D TMDs to arbitrary substrates by dissolving a sacrificial water-soluble layer, which is formed underneath 2D TMD flakes simultaneously during the growth process. It is demonstrated, for monolayer MoS₂, that no quality degradation is found after the transfer by performing transmission electron microscopy, Raman spectroscopy, photoluminescence and electrical transport studies. The field effect mobility of the post-transfer MoS₂ flakes was found to be improved by 2-3 orders compared with that of the as-grown ones. This approach was also demonstrated to be applicable to other TMDs, other halide salts as precursors, or other growth substrates, indicating its universality for other 2D materials. Our work may pave the way for material synthesis of future integrated electronic and optoelectronic devices based on 2D TMD materials.