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Liu J, Huang Z, Xu Y, Liu P, Wu K, Hao Y, Zhang Y, Zhang Z, Zhang Z, Ding B, Li B, Liu B. Tunable and Non-Invasive Printing of Transmissive Interference Colors with 2D Material Inks. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402116. [PMID: 38923774 DOI: 10.1002/smll.202402116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 06/10/2024] [Indexed: 06/28/2024]
Abstract
Interference colors hold significant importance in optics and arts. Current methods for printing interference colors entail complex procedures and large-scale printing systems for the scarcity of inks that exhibit both sensitivity and tunability to external fields. The production of highly transparent inks capable of rendering transmissive colors has presented ongoing challenges. Here, a type of paramagnetic ink based on 2D materials that exhibit polychrome in one magnetic field is invented. By precisely manipulating the doping ratio of magnetic elements within titanate nanosheets, the magneto-optical sensitivity named Cotton-Mouton coefficient is engineerable from 728 to a record high value of 3272 m-1 T-2, with negligible influence on its intrinsic wide optical bandgap. Combined with the sensitive and controllable magneto-responsiveness of the ink, modulate and non-invasively print transmissive interference colors using small permanent magnets are precised. This work paves the way for preparing transmissive interference colors in an energy-saving and damage-free manner, which can expand its use in widespread areas.
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Affiliation(s)
- Jiarong Liu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Ziyang Huang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Youan Xu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- Xi'an Research Institute of High Technology, Xi'an Research Institute of High Technology, Xi'an, 710025, P. R. China
| | - Peng Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Keyou Wu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yugan Hao
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Zhiyuan Zhang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Zehao Zhang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Baofu Ding
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- Materials Science and Engineering Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Bing Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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2
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Xu Y, Huang Z, Zhang Z, Ding B, Li P, Liu J, Hao Y, Dai L, Zhang H, Zhu C, Cai W, Liu B. An Electro-Optical Kerr Device Based on 2D Boron Nitride Liquid Crystals for Solar-Blind Communications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307330. [PMID: 38497596 DOI: 10.1002/adma.202307330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 03/08/2024] [Indexed: 03/19/2024]
Abstract
Achieving light modulation in the spectral range of 200-280 nm is a prerequisite for solar-blind ultraviolet communication, where current technologies are mainly based on the electro-luminescent self-modulation of the ultraviolet source. External light modulation through the electro-birefringence control of liquid crystal (LC) devices has shown success in the visible-to-infrared regions. However, the poor stability of conventional LCs against ultraviolet irradiation and their weak electro-optical response make it challenging to modulate ultraviolet light. Here, an external ultraviolet light modulator is demonstrated using two-dimensional boron nitride LC. It exhibits robust ultraviolet stability and a record-high specific electro-optical Kerr coefficient of 5.1 × 10⁻2 m V-2, being three orders of magnitude higher than those of other known electro-optical media that are transparent (or potentially transparent) in the ultraviolent spectral range. The sensitive response enables fabricating transmissive and stable ultraviolet-C electro-optical Kerr modulators for solar-blind ultraviolet light. An M-ary coding array with high transmission density is also demonstrated for solar-blind ultraviolet communication.
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Affiliation(s)
- Youan Xu
- Xi'an Research Institute of High Technology, Xi'an, 710025, China
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Ziyang Huang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Zehao Zhang
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Baofu Ding
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
- Institute of Technology for Carbon Neutrality/Faculty of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, CAS, Shenzhen, 518055, China
| | - Peixuan Li
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Jiarong Liu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Yugan Hao
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Lixin Dai
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Hao Zhang
- Institute of Low-dimensional Materials Genome Initiative, College of Chemistry and Environmental Engineering of Shenzhen University, Shenzhen, 518060, China
| | - Caizhen Zhu
- Institute of Low-dimensional Materials Genome Initiative, College of Chemistry and Environmental Engineering of Shenzhen University, Shenzhen, 518060, China
| | - Wei Cai
- Xi'an Research Institute of High Technology, Xi'an, 710025, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
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3
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Huang Z, Zhang Z, Zhang R, Ding B, Yang L, Wu K, Xu Y, Zhong G, Ren C, Liu J, Hao Y, Wu M, Ma T, Liu B. An inorganic liquid crystalline dispersion with 2D ferroelectric moieties. Natl Sci Rev 2024; 11:nwae108. [PMID: 38680206 PMCID: PMC11055536 DOI: 10.1093/nsr/nwae108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Accepted: 03/12/2024] [Indexed: 05/01/2024] Open
Abstract
Electro-optical effect-based liquid crystal devices have been extensively used in optical modulation techniques, in which the Kerr coefficient reflects the sensitivity of the liquid crystals and determines the strength of the device's operational electric field. The Peterlin-Stuart theory and the O'Konski model jointly indicate that a giant Kerr coefficient could be obtained in a material with both a large geometrical anisotropy and an intrinsic polarization, but such a material is not yet reported. Here we reveal a ferroelectric effect in a monolayer two-dimensional mineral vermiculite. A large geometrical anisotropy factor and a large inherent electric dipole together raise the record value of Kerr coefficient by an order of magnitude, till 3.0 × 10-4 m V-2. This finding enables an ultra-low operational electric field of 102-104 V m-1 and the fabrication of electro-optical devices with an inch-level electrode separation, which has not previously been practical. Because of its high ultraviolet stability (decay <1% under ultraviolet exposure for 1000 hours), large-scale production, and energy efficiency, prototypical displayable billboards have been fabricated for outdoor interactive scenes. This work provides new insights for both liquid crystal optics and two-dimensional ferroelectrics.
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Affiliation(s)
- Ziyang Huang
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Zehao Zhang
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Rongjie Zhang
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Baofu Ding
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Institute of Technology for Carbon Neutrality, Faculty of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Liu Yang
- School of Physics and Institute for Quantum Science and Engineering, School of Chemistry and Institute of Theoretical Chemistry, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Keyou Wu
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Youan Xu
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Xi'an Research Institute of High Technology, Xi'an 710025, China
| | - Gaokuo Zhong
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Chuanlai Ren
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Jiarong Liu
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yugan Hao
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Menghao Wu
- School of Physics and Institute for Quantum Science and Engineering, School of Chemistry and Institute of Theoretical Chemistry, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Teng Ma
- Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, China
| | - Bilu Liu
- Shenzhen Graphene Centre, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua−Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
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4
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Zhang L, Yang Z, Feng S, Guo Z, Jia Q, Zeng H, Ding Y, Das P, Bi Z, Ma J, Fu Y, Wang S, Mi J, Zheng S, Li M, Sun DM, Kang N, Wu ZS, Cheng HM. Metal telluride nanosheets by scalable solid lithiation and exfoliation. Nature 2024; 628:313-319. [PMID: 38570689 DOI: 10.1038/s41586-024-07209-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 02/20/2024] [Indexed: 04/05/2024]
Abstract
Transition metal tellurides (TMTs) have been ideal materials for exploring exotic properties in condensed-matter physics, chemistry and materials science1-3. Although TMT nanosheets have been produced by top-down exfoliation, their scale is below the gram level and requires a long processing time, restricting their effective application from laboratory to market4-8. We report the fast and scalable synthesis of a wide variety of MTe2 (M = Nb, Mo, W, Ta, Ti) nanosheets by the solid lithiation of bulk MTe2 within 10 min and their subsequent hydrolysis within seconds. Using NbTe2 as a representative, we produced more than a hundred grams (108 g) of NbTe2 nanosheets with 3.2 nm mean thickness, 6.2 µm mean lateral size and a high yield (>80%). Several interesting quantum phenomena, such as quantum oscillations and giant magnetoresistance, were observed that are generally restricted to highly crystalline MTe2 nanosheets. The TMT nanosheets also perform well as electrocatalysts for lithium-oxygen batteries and electrodes for microsupercapacitors (MSCs). Moreover, this synthesis method is efficient for preparing alloyed telluride, selenide and sulfide nanosheets. Our work opens new opportunities for the universal and scalable synthesis of TMT nanosheets for exploring new quantum phenomena, potential applications and commercialization.
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Affiliation(s)
- Liangzhu Zhang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China
- Shanghai Electronic Chemicals innovation Institute, East China University of science and Technology, Shanghai, China
| | - Zixuan Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Zhuobin Guo
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Qingchao Jia
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China
- Shanghai Electronic Chemicals innovation Institute, East China University of science and Technology, Shanghai, China
| | - Huidan Zeng
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China
- Shanghai Electronic Chemicals innovation Institute, East China University of science and Technology, Shanghai, China
| | - Yajun Ding
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Pratteek Das
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Zhihong Bi
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Jiaxin Ma
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Yunqi Fu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Sen Wang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Jinxing Mi
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Shuanghao Zheng
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, China
| | - Mingrun Li
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ning Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
| | - Zhong-Shuai Wu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China.
- Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, China.
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5
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Navik R, Tan H, Zhang H, Shi L, Li J, Zhao Y. High-Throughput and Scalable Exfoliation of Large-Sized Ultrathin 2D Materials by Ball-Milling in Supercritical Carbon Dioxide. SMALL METHODS 2024:e2301334. [PMID: 38528378 DOI: 10.1002/smtd.202301334] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2023] [Revised: 03/09/2024] [Indexed: 03/27/2024]
Abstract
The 2D materials exhibit numerous technological applications, but their scalable production is a core challenge. Herein, ball milling exfoliation in supercritical carbon dioxide (scCO2) and polystyrene (PS) is demonstrated to completely exfoliate hexagonal boron nitride nanosheets (BNNSs), graphene, molybdenum disulfide (MoS2), and tungsten disulfide (WS2). The exfoliation yield of 91%, 93%, 92%, and 92% and average aspect ratios of 743, 565, 564, and 502 for BNNSs, graphene, MoS2, and WS2, respectively, are achieved. Integrating exfoliated BNNSS in the polystyrene matrix, 3768 % thermal conductivity in the axial direction and 316% in the cross-plane direction at 12 wt.% loading is increased. Also, the in-plane and cross-plane electrical conductivity of 6.3 × 10-4 S m-1 and 6.6 × 10-3 S m-1, respectively, and the electromagnetic interference (EMI) of 63.3 dB is achieved by exfoliated graphene nanosheets based composite. High thermal and electrical conductivities and EMI shielding are attributed to the high aspect ratio and ultrathin morphology of the exfoliated nanosheets, which exert high charge mobility and form better the percolation network in the composite films due to their high surface area. The process demonstrate herein can produce substantial quantities of diverse 2D nanosheets for widespread commercial utilization.
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Affiliation(s)
- Rahul Navik
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha IT Park, No. 2 Huan Shi Da Dao Road Nansha, Guangzhou, 511458, China
| | - Huijun Tan
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
| | - Hao Zhang
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
| | - Liyun Shi
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
| | - Jia Li
- Guangzhou HKUST Fok Ying Tung Research Institute, Nansha IT Park, No. 2 Huan Shi Da Dao Road Nansha, Guangzhou, 511458, China
| | - Yaping Zhao
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
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6
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Chen Y, Liu Y, Liu X, Li P, Li Z, Jiang P, Huang X. On-Demand Preparation of Boron Nitride Nanosheets for Functional Nanocomposites. SMALL METHODS 2024:e2301386. [PMID: 38236164 DOI: 10.1002/smtd.202301386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Revised: 01/04/2024] [Indexed: 01/19/2024]
Abstract
Boron nitride nanosheets (BNNSs) have garnered significant attention across diverse fields; however, accomplishing on-demand, large-scale, and highly efficient preparation of BNNSs remains a challenge. Here, an on-demand preparation (OdP) method combining high-pressure homogenization and short-time ultrasonication is presented; it enables a highly efficient and controllable preparation of BNNSs from bulk hexagonal boron nitride (h-BN). The homogenization pressure and number of cycles are adjusted, and the production efficiency and yield of BNNSs reach 0.95 g g-1 h-1 and 82.8%, respectively, which significantly exceed those attained by using existing methods. The universality of the OdP method is demonstrated on h-BN raw materials of various bulk sizes from various producers. Furthermore, this method allows the preparation of BNNSs having specific sizes based on the final requirements. Both simulation and experimental results indicate that large BNNSs are particularly suitable for enhancing the thermal conductivity and electrical insulation properties of dielectric polymer nanocomposites. Interestingly, the small BNNS-filled photonic nanocomposite films fabricated via the OdP method exhibit superior daytime radiative cooling properties. Additionally, the OdP method offers the benefits of low energy consumption and reduced greenhouse gas emissions and fossil energy use. These findings underscore the unique advantages of the OdP method over other techniques for a high-efficiency and controllable preparation of large BNNSs.
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Affiliation(s)
- Yu Chen
- Department of Polymer Science and Engineering, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yijie Liu
- Department of Polymer Science and Engineering, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiangyu Liu
- Department of Polymer Science and Engineering, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Pengli Li
- Department of Polymer Science and Engineering, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhe Li
- Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Pingkai Jiang
- Department of Polymer Science and Engineering, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xingyi Huang
- Department of Polymer Science and Engineering, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, Shanghai Jiao Tong University, Shanghai, 200240, China
- Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
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7
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Zhang Y, Nie K, Yi L, Li B, Yuan Y, Liu Z, Huang W. Recent Advances in Engineering of 2D Materials-Based Heterostructures for Electrochemical Energy Conversion. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302301. [PMID: 37743245 PMCID: PMC10625098 DOI: 10.1002/advs.202302301] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Revised: 08/11/2023] [Indexed: 09/26/2023]
Abstract
2D materials, such as graphene, transition metal dichalcogenides, black phosphorus, layered double hydroxides, and MXene, have exhibited broad application prospects in electrochemical energy conversion due to their unique structures and electronic properties. Recently, the engineering of heterostructures based on 2D materials, including 2D/0D, 2D/1D, 2D/2D, and 2D/3D, has shown the potential to produce synergistic and heterointerface effects, overcoming the inherent restrictions of 2D materials and thus elevating the electrocatalytic performance to the next level. In this review, recent studies are systematically summarized on heterostructures based on 2D materials for advanced electrochemical energy conversion, including water splitting, CO2 reduction reaction, N2 reduction reaction, etc. Additionally, preparation methods are introduced and novel properties of various types of heterostructures based on 2D materials are discussed. Furthermore, the reaction principles and intrinsic mechanisms behind the excellent performance of these heterostructures are evaluated. Finally, insights are provided into the challenges and perspectives regarding the future engineering of heterostructures based on 2D materials for further advancements in electrochemical energy conversion.
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Affiliation(s)
- Yujia Zhang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
| | - Kunkun Nie
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
| | - Lixin Yi
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
| | - Binjie Li
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
| | - Yanling Yuan
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
| | - Zhengqing Liu
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
| | - Wei Huang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE)Northwestern Polytechnical UniversityXi'an710129China
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8
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Lobo K, Gangaiah VK, Alex C, John NS, Ramakrishna Matte HSS. Spontaneous Decoration of Ultrasmall Pt Nanoparticles on Size-Separated MoS 2 Nanosheets. Chemistry 2023; 29:e202301596. [PMID: 37497808 DOI: 10.1002/chem.202301596] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 07/23/2023] [Accepted: 07/23/2023] [Indexed: 07/28/2023]
Abstract
Liquid exfoliation can be considered as a viable approach for the scalable production of 2D materials due to its various benefits, although the polydispersity in the obtained nanosheet size hinders their straightforward incorporation. Size-separation can help alleviate these concerns, however a correlation between nanosheet size and property needs to be established to bring about size-specific applicability. Herein, size-selected aqueous nanosheet dispersions have been obtained via centrifugation-based protocols, and their chemical activity in the spontaneous reduction of chloroplatinic acid is investigated. Growth of ultrasmall Pt nanoparticles was achieved on nanosheet surfaces without a need for reducing agents, and stark differences in the nanoparticle coverage were observed as a function of nanosheet size. Defects in the nanosheets were probed via Raman spectroscopy, and correlated to the observed size-activity. Additionally, the effect of reaction temperature during synthesis was investigated. The electrochemical activity of the ultrasmall Pt nanoparticle decorated MoS2 nanosheets was evaluated for the hydrogen evolution reaction, and enhancement in performance was observed with nanosheet size, and nanoparticle decoration density. These findings shine light on the significance of nanosheet size in controlling spontaneous reduction reactions, and provide a deeper insight to intrinsic properties of liquid exfoliated nanosheets.
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Affiliation(s)
- Kenneth Lobo
- Energy Materials Laboratory, Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Manipal Academy of Higher Education, Manipal, 576 104, India
| | - Vijaya Kumar Gangaiah
- Energy Materials Laboratory, Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| | - Chandraraj Alex
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| | - Neena S John
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
| | - H S S Ramakrishna Matte
- Energy Materials Laboratory, Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
- Centre for Nano and Soft Matter Sciences, Arkavathi campus, Survey No.7, Shivanapura, Dasanapura Hobli, Bengaluru, 562162, India
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9
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Wang Z, Yang L, Dai L, Huang Z, Wu K, Liu B. Scalable Production of 2D Minerals by Polymer Intercalation and Adhesion for Multifunctional Applications. SMALL METHODS 2023; 7:e2300529. [PMID: 37246257 DOI: 10.1002/smtd.202300529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Revised: 05/17/2023] [Indexed: 05/30/2023]
Abstract
Natural and sustainable 2D minerals have many unique properties and may reduce reliance on petroleum-based products. However, the large-scale production of 2D minerals remains challenging. Herein, a green, scalable, and universal polymer intercalation and adhesion exfoliation (PIAE) method to produce 2D minerals such as vermiculite, mica, nontronite, and montmorillonite with large lateral sizes and high efficiency, is developed. The exfoliation relies on the dual functions of polymers involving intercalation and adhesion to expand interlayer space and weaken interlayer interactions of minerals, facilitating their exfoliation. Taking vermiculite as an example, the PIAE produces 2D vermiculite with an average lateral size of 1.83 ± 0.48 µm and thickness of 2.40 ± 0.77 nm at a yield of ≈30.8%, surpassing state-of-the-art methods in preparing 2D minerals. Flexible films are directly fabricated by the 2D vermiculite/polymer dispersion, exhibiting outstanding performances including mechanical strength, thermal resistance, ultraviolet shielding, and recyclability. The representative application of colorful multifunctional window coatings in sustainable buildings is demonstrated, indicating the potential of massively produced 2D minerals.
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Affiliation(s)
- Zhongyue Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liusi Yang
- Center for Quantum Physics and Intelligent Sciences, Department of Physics, Capital Normal University, Beijing, 100048, P. R. China
| | - Lixin Dai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Ziyang Huang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Keyou Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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10
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Zhang M, Yang L, Wu X, Wang J. Black Phosphorus for Photonic Integrated Circuits. RESEARCH (WASHINGTON, D.C.) 2023; 6:0206. [PMID: 37593339 PMCID: PMC10430873 DOI: 10.34133/research.0206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 07/19/2023] [Indexed: 08/19/2023]
Abstract
Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.
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Affiliation(s)
| | | | | | - Junjia Wang
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering,
Southeast University, 2 Sipailou, Nanjing 210096, China
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11
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Li Z, Han M, Zhang Y, Yuan F, Fu Y, Yu J. Single-Layered MoS 2 Fabricated by Charge-Driven Interlayer Expansion for Superior Lithium/Sodium/Potassium-Ion-Battery Anodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207234. [PMID: 36950770 DOI: 10.1002/advs.202207234] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 02/10/2023] [Indexed: 05/27/2023]
Abstract
Single-layered MoS2 is a promising anode material for lithium-ion batteries (LIBs), sodium-ion batteries (SIBs), and potassium-ion batteries (PIBs) due to its high capacity and isotropic ion transport paths. However, the low intrinsic conductivity and easy-agglomerated feature hamper its applications. Here, a charge-driven interlayer expansion strategy that Co2+ replaces Mo4+ in the doping form to endow MoS2 layers with negative charges, thus inducing electrostatic repulsion, together with the insertion of gaseous groups, to drive interlayer expansion which once breaks the confinement of interlayer van der Waals force, single-layered MoS2 is obtained and uniformly dispersed into carbon matrix arising from the transformation of carbonaceous gaseous groups under high vapor pressure, is proposed. Co atom doping helps enhance the intrinsic conductivity of single-layered MoS2 . Carbon matrix effectively prevents agglomeration of single-layered MoS2 . The doped Co atoms can be fully transformed into ultrasmall Co nanoparticles during conversion reaction, which enables strong spin-polarized surface capacitance and thus significantly boosts ion transport and storage. Consequently, the prepared material delivers superb Li/Na/K-ion storage performances, which are best in the reported MoS2 -based anodes. The proposed charge-driven interlayer expansion strategy provides a novel perspective for preparing single-layered MoS2, which shows huge potential for energy storage.
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Affiliation(s)
- Zhenwei Li
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Shenzhen Engineering Lab for Supercapacitor Materials, School of Material Science and Engineering, Harbin Institute of Technology, Shenzhen University Town, Shenzhen, 518055, P. R. China
| | - Meisheng Han
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Yuanbo Zhang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Shenzhen Engineering Lab for Supercapacitor Materials, School of Material Science and Engineering, Harbin Institute of Technology, Shenzhen University Town, Shenzhen, 518055, P. R. China
| | - Fu Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Ying Fu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Jie Yu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Shenzhen Engineering Lab for Supercapacitor Materials, School of Material Science and Engineering, Harbin Institute of Technology, Shenzhen University Town, Shenzhen, 518055, P. R. China
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12
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Deepak D, Upadhyay RK, Sankaran KJ, Banerjee D, Choudhury S, Sharma G, Roy SS. Surfactant gel-based method: A universal soft method for the exfoliation of 2D materials. J Colloid Interface Sci 2023; 645:906-917. [PMID: 37178567 DOI: 10.1016/j.jcis.2023.04.125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Revised: 04/14/2023] [Accepted: 04/23/2023] [Indexed: 05/15/2023]
Abstract
HYPOTHESIS Fluidic micelles and reverse micelles have served as exfoliation mediums. However, an additional force, such as extended sonication, is required. Gelatinous cylindrical micelles that are formed once desired conditions are achieved can be an ideal medium for the quick exfoliation of 2D materials without the need for any external force. The quick formation of gelatinous cylindrical micelles can rip off layers from the 2D materials suspended in the mixture leading to the quick exfoliation of 2D materials. EXPERIMENTS Herein, we introduce a quick universal method capable of delivering high-quality exfoliated 2D materials cost-effectively using CTAB-based gelatinous micelles as an exfoliation medium. The approach is devoid of harsh treatment, such as prolonged sonication and heating, and a quick exfoliation of 2D materials is completed using this approach. FINDINGS We successfully exfoliated four 2D materials (MoS2, Graphene, WS2, and BN) and investigated their morphology, chemical, and crystal structure along with optical and electrochemical properties to probe the quality of the exfoliated product. Results revealed that the proposed method is highly efficient in exfoliating 2D materials in a quick time without causing any significant damage to the mechanical integrity of the exfoliated materials.
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Affiliation(s)
- Deepak Deepak
- Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence (SNIoE), NH-91, Greater Noida, Uttar Pradesh 201314, India
| | - Ravi Kant Upadhyay
- Department of Mechanical Engineering, Indian Institute of Technology, Ropar, Punjab 140001, India.
| | | | - Debosmita Banerjee
- Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence (SNIoE), NH-91, Greater Noida, Uttar Pradesh 201314, India
| | - Sudipta Choudhury
- Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence (SNIoE), NH-91, Greater Noida, Uttar Pradesh 201314, India
| | - Gunjan Sharma
- Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence (SNIoE), NH-91, Greater Noida, Uttar Pradesh 201314, India
| | - Susanta Sinha Roy
- Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence (SNIoE), NH-91, Greater Noida, Uttar Pradesh 201314, India.
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13
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Rhee D, Han B, Jung M, Kim J, Song O, Kang J. Hierarchical Nanoscale Structuring of Solution-Processed 2D van der Waals Networks for Wafer-Scale, Stretchable Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57153-57164. [PMID: 36519946 DOI: 10.1021/acsami.2c16738] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) semiconductors are promising for next-generation electronics that are lightweight, flexible, and stretchable. Achieving stretchability with suppressed crack formation, however, is still difficult without introducing lithographically etched micropatterns, which significantly reduces active device areas. Herein, we report a solution-based hierarchical structuring to create stretchable semiconducting films that are continuous over wafer-scale areas via self-assembly of two-dimensional nanosheets. Electrochemically exfoliated MoS2 nanosheets with large lateral sizes (∼1 μm) are first assembled into a uniform film on a prestrained thermoplastic substrate, followed by strain relief of the substrate to create nanoscale wrinkles. Subsequent strain-relief cycles with the presence of soluble polymer films produce hierarchical wrinkles with multigenerational structures. Stretchable MoS2 films are then realized by curing an elastomer directly on the wrinkled surface and dissolving the thermoplastic. Three-generation hierarchical MoS2 wrinkles are resistant to cracking up to nearly 100% substrate stretching and achieve drastically enhanced photoresponsivity compared to the flat counterpart over the visible and NIR regimes, while the flat MoS2 film is beneficial in creating strain sensors because of its strain-dependent electrical response.
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Affiliation(s)
- Dongjoon Rhee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Boyun Han
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Myeongjin Jung
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Okin Song
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, SKKU, Suwon 16419, Republic of Korea
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14
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Zhang X, Zhang Y, Yu H, Zhao H, Cao Z, Zhang Z, Zhang Y. Van der Waals-Interface-Dominated All-2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2207966. [PMID: 36353883 DOI: 10.1002/adma.202207966] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yanzhe Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Hang Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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15
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Lee YH. 2D material inorganic liquid crystals for tunable deep UV light modulation. Natl Sci Rev 2022; 9:nwac252. [PMID: 36567806 PMCID: PMC9772814 DOI: 10.1093/nsr/nwac252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Accepted: 11/04/2022] [Indexed: 11/11/2022] Open
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16
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Yang H, Yu T, Sun Z, Cheng HM, Li F. Six-membered-ring inorganic materials for electrochemical applications. TRENDS IN CHEMISTRY 2022. [DOI: 10.1016/j.trechm.2022.09.009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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17
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Wang X, Tan J, Ouyang J, Zhang H, Wang J, Wang Y, Deringer VL, Zhou J, Zhang W, Ma E. Designing Inorganic Semiconductors with Cold-Rolling Processability. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203776. [PMID: 35981888 PMCID: PMC9596854 DOI: 10.1002/advs.202203776] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Revised: 08/03/2022] [Indexed: 06/15/2023]
Abstract
While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single-crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m0.5 and 15 meV Å-2 , respectively. The findings open a new realm of possibility for alloy selection and design toward processing-friendly group-III chalcogenides for practical applications.
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Affiliation(s)
- Xu‐Dong Wang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jieling Tan
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jian Ouyang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Hang‐Ming Zhang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Jiang‐Jing Wang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Yuecun Wang
- Center for Advancing Materials Performance from the Nanoscale (CAMP‐Nano) and Hysitron Applied Research Center in China (HARCC)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Volker L. Deringer
- Department of ChemistryInorganic Chemistry LaboratoryUniversity of OxfordOxfordOX1 3QRUK
| | - Jian Zhou
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - Wei Zhang
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
| | - En Ma
- Center for Alloy Innovation and Design (CAID)State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049China
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18
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Pan XF, Yu GH, Gao HL, Wang ZZ, Bao Z, Li X, Yu SH. Large-Scale Production of Rectorite Nanosheets and Their Co-Assembly with Aramid Nanofibers for High-Performance Electrical Insulating Nanopapers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206855. [PMID: 36082538 DOI: 10.1002/adma.202206855] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Revised: 08/31/2022] [Indexed: 06/15/2023]
Abstract
Compared with raw rectorite microplatelets (RMs), rectorite nanosheets (RNs) have considerably greater application prospects in the preparation of advanced composite materials because of their larger aspect ratio, higher surface reactivity, and intrinsically superior mechanical and physical properties. However, the difficulty in the efficient preparation of RNs significantly limits their large-scale applications. Here, a scalable poly(vinylpyrrolidone)-assisted stirring approach is developed to prepare ultrathin RNs from the abundant natural RMs. A higher production rate (≈0.675 g h-1 ) is achieved compared with that of most other nanosheets. Additionally, instead of using conventional time- and energy-consuming high-speed centrifugation, an efficient poly(dienedimethylammonium chloride)-assisted sedimentation strategy is proposed here to rapidly separate the exfoliated RNs from the RN dispersion. Then, the RNs are co-assembled with aramid nanofibers (ANFs) into large-scale nacre-mimetic ANF-RN nanopapers with considerably enhanced mechanical, electrical insulating, and high-temperature-resistant properties compared with pure ANF nanopapers and ANF-RM micropapers. Moreover, these properties are superior to those of previously reported ANF-based nanopapers and commercial insulating micropapers.
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Affiliation(s)
- Xiao-Feng Pan
- Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Guan-Hua Yu
- Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Huai-Ling Gao
- Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Zhe-Zhao Wang
- Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Zhiwei Bao
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Xiaoguang Li
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Shu-Hong Yu
- Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
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19
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Kaur H, Coleman JN. Liquid-Phase Exfoliation of Nonlayered Non-Van-Der-Waals Crystals into Nanoplatelets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202164. [PMID: 35470487 DOI: 10.1002/adma.202202164] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 04/07/2022] [Indexed: 05/28/2023]
Abstract
For nearly 15 years, researchers have been using liquid-phase exfoliation (LPE) to produce 2D nanosheets from layered crystals. This has yielded multiple 2D materials in a solution-processable form whose utility has been demonstrated in multiple applications. It was believed that the exfoliation of such materials is enabled by the very large bonding anisotropy of layered materials where the strength of intralayer chemical bonds is very much larger than that of interlayer van der Waals bonds. However, over the last five years, a number of papers have raised questions about our understanding of exfoliation by describing the LPE of nonlayered materials. These results are extremely surprising because, as no van der Waals gap is present to provide an easily cleaved direction, the exfoliation of such compounds requires the breaking of only chemical bonds. Here the progress in this unexpected new research area is examined. The structure and properties of nanoplatelets produced by LPE of nonlayered materials are reviewed. A number of unexplained trends are found, not least the preponderance of isotropic materials that have been exfoliated to give high-aspect-ratio nanoplatelets. Finally, the applications potential of this new class of 2D materials are considered.
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Affiliation(s)
- Harneet Kaur
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin, D02 PN40, Ireland
| | - Jonathan N Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin, D02 PN40, Ireland
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20
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Sun X, Feng Y, Wang F, Wang P, Gao W, Yin H. Direct growth of h-BN multilayers with controlled thickness on non-crystalline dielectric substrates without metal catalysts. Chem Commun (Camb) 2022; 58:9750-9753. [PMID: 35946432 DOI: 10.1039/d2cc03025j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report an rGO-assisted CVD approach that enables the direct growth of high-quality single crystalline h-BN films with adjustable thickness and layered order on amorphous quartz and SiO2/Si substrates at relatively low temperatures. This work demonstrates a viable prototype for growing continuous ultrathin h-BN films on desired substrates without the requirement of lattice orientation, thus offering a great opportunity for their appealing applications.
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Affiliation(s)
- Xiaoyan Sun
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, Jilin, People's Republic of China.
| | - Yuanfang Feng
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, Jilin, People's Republic of China.
| | - Fei Wang
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, Jilin, People's Republic of China.
| | - Peng Wang
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, Jilin, People's Republic of China.
| | - Wei Gao
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, Jilin, People's Republic of China.
| | - Hong Yin
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, Jilin, People's Republic of China.
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21
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Tan J, Zhang Z, Zeng S, Li S, Wang J, Zheng R, Hou F, Wei Y, Sun Y, Zhang R, Zhao S, Nong H, Chen W, Gan L, Zou X, Zhao Y, Lin J, Liu B, Cheng HM. Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies. Sci Bull (Beijing) 2022; 67:1649-1658. [DOI: 10.1016/j.scib.2022.06.022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 05/14/2022] [Accepted: 06/20/2022] [Indexed: 10/17/2022]
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22
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Sett S, Parappurath A, Gill NK, Chauhan N, Ghosh A. Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids. NANO EXPRESS 2022. [DOI: 10.1088/2632-959x/ac46b9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Abstract
Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.
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Fabrication of Polycrystalline Cubic Boron Nitride/Metal Composite Particles by Surface Metallization Followed by Electroless Deposition Technique. MATERIALS 2021; 14:ma14247906. [PMID: 34947501 PMCID: PMC8704697 DOI: 10.3390/ma14247906] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/12/2021] [Revised: 12/10/2021] [Accepted: 12/12/2021] [Indexed: 11/17/2022]
Abstract
Polycrystalline cBN/copper composite abrasive particles were prepared by an electroless powder coating process. Ti metallization and tin/silver metallization techniques were used to improve the coating process by depositing an autocatalytic metallic layer on the surface of the cBN particles. Metallized, as well as un-metallized, cBN particles were further coated by copper using electroless deposition. Electroless copper coating of un-metallized and metallized cBN particles by 90 wt.% of copper were achieved. The surface morphology, the composition and the crystalline phase identifications of the metallized cBN particles, as well as the 10 wt.% cBN /copper composite powders, were investigated by field emission scanning electron microscopy, an energy-dispersive spectrometer and an X-ray diffractometer. The results show that the surface of the Ti metalized and tin/Ag-metallized cBN particles were covered by the nanosized Ti or Ag layer, respectively, which enhanced the deposition of the copper during the electroless deposition bath. The results also showed that the deposited layer on the metallized cBN particles was composed mainly of metallic copper. The produced 10 wt.% cBN/copper composite particles also underwent thermo-gravimetric analysis to investigate its stability at high temperature. It was revealed that the Ti-metallized cBN/copper composite powder has higher stability at 800 °C under the environmental conditions than the tin/silver-metallized and the un-metallized cBN/copper composite particles, respectively.
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Niu H, Zhang K, Myllymäki S, Ismail MY, Kinnunen P, Illikainen M, Liimatainen H. Nanostructured and Advanced Designs from Biomass and Mineral Residues: Multifunctional Biopolymer Hydrogels and Hybrid Films Reinforced with Exfoliated Mica Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57841-57850. [PMID: 34813268 PMCID: PMC8662632 DOI: 10.1021/acsami.1c18911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 11/15/2021] [Indexed: 06/13/2023]
Abstract
Transforming potential waste materials into high-value-added sustainable materials with advanced properties is one of the key targets of the emerging green circular economy. Natural mica (muscovite) is abundant in the mining industry, which is commonly regarded as a byproduct and gangue mineral flowing to waste rock and mine tailings. Similarly, chitin is the second-most abundant biomass resource on Earth after cellulose, extracted as a byproduct from the exoskeleton of crustaceans, fungal mycelia, and mushroom wastes. In this study, exfoliated mica nanosheets were individualized using a mechanochemical process and incorporated into regenerated chitin matrix through an alkali dissolution system (KOH/urea) to result in a multifunctional, hybrid hydrogel, and film design. The hydrogels displayed a hierarchical and open nanoporous structure comprising an enhanced, load-bearing double-cross-linked polymeric chitin network strengthened by mica nanosheets possessing high stiffness after high-temperature curing, while the hybrid films (HFs) exhibited favorable UV-shielding properties, optical transparency, and dielectric properties. These hybrid designs derived from industrial residues pave the way toward sustainable applications for many future purposes, such as wearable devices and tissue engineering/drug delivery.
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Affiliation(s)
- He Niu
- Fibre
and Particle Engineering Research Unit, University of Oulu, P.O. Box 4300, FI-90570 Oulu, Finland
| | - Kaitao Zhang
- Fibre
and Particle Engineering Research Unit, University of Oulu, P.O. Box 4300, FI-90570 Oulu, Finland
| | - Sami Myllymäki
- Microelectronics
Research Unit, Faculty of Information and Electrical Engineering, University of Oulu, P.
O. Box 4500, FI-90570 Oulu, Finland
| | - Mostafa Y. Ismail
- Fibre
and Particle Engineering Research Unit, University of Oulu, P.O. Box 4300, FI-90570 Oulu, Finland
| | - Paivo Kinnunen
- Fibre
and Particle Engineering Research Unit, University of Oulu, P.O. Box 4300, FI-90570 Oulu, Finland
| | - Mirja Illikainen
- Fibre
and Particle Engineering Research Unit, University of Oulu, P.O. Box 4300, FI-90570 Oulu, Finland
| | - Henrikki Liimatainen
- Fibre
and Particle Engineering Research Unit, University of Oulu, P.O. Box 4300, FI-90570 Oulu, Finland
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Abstract
In recent years, 2D materials have been implemented in several applications due to their unique and unprecedented properties. Several examples can be named, from the very first, graphene, to transition-metal dichalcogenides (TMDs, e.g., MoS2), two-dimensional inorganic compounds (MXenes), hexagonal boron nitride (h-BN), or black phosphorus (BP). On the other hand, the accessible and low-cost 3D printers and design software converted the 3D printing methods into affordable fabrication tools worldwide. The implementation of this technique for the preparation of new composites based on 2D materials provides an excellent platform for next-generation technologies. This review focuses on the recent advances of 3D printing of the 2D materials family and its applications; the newly created printed materials demonstrated significant advances in sensors, biomedical, and electrical applications.
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Roy S, Zhang X, Puthirath AB, Meiyazhagan A, Bhattacharyya S, Rahman MM, Babu G, Susarla S, Saju SK, Tran MK, Sassi LM, Saadi MASR, Lai J, Sahin O, Sajadi SM, Dharmarajan B, Salpekar D, Chakingal N, Baburaj A, Shuai X, Adumbumkulath A, Miller KA, Gayle JM, Ajnsztajn A, Prasankumar T, Harikrishnan VVJ, Ojha V, Kannan H, Khater AZ, Zhu Z, Iyengar SA, Autreto PADS, Oliveira EF, Gao G, Birdwell AG, Neupane MR, Ivanov TG, Taha-Tijerina J, Yadav RM, Arepalli S, Vajtai R, Ajayan PM. Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101589. [PMID: 34561916 DOI: 10.1002/adma.202101589] [Citation(s) in RCA: 94] [Impact Index Per Article: 31.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Revised: 05/24/2021] [Indexed: 05/09/2023]
Abstract
Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ashokkumar Meiyazhagan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Muhammad M Rahman
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ganguli Babu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sandhya Susarla
- Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA, 94720, USA
| | - Sreehari K Saju
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Mai Kim Tran
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Lucas M Sassi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - M A S R Saadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jiawei Lai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Onur Sahin
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Seyed Mohammad Sajadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Bhuvaneswari Dharmarajan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Devashish Salpekar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Nithya Chakingal
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Abhijit Baburaj
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Aparna Adumbumkulath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Kristen A Miller
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jessica M Gayle
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Alec Ajnsztajn
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Thibeorchews Prasankumar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | | | - Ved Ojha
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ali Zein Khater
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Zhenwei Zhu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pedro Alves da Silva Autreto
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Center for Natural and Human Sciences, Federal University of ABC (UFABC), Av. Dos Estados, 5001-Bangú, Santo André - SP, Santo André, 09210-580, Brazil
| | - Eliezer Fernando Oliveira
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Applied Physics Department, State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
- Center for Computational Engineering and Sciences (CCES), State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - A Glen Birdwell
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Jaime Taha-Tijerina
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Engineering Department, Universidad de Monterrey, Av. Ignacio Morones Prieto 4500 Pte., San Pedro Garza Garcí, Monterrey, Nuevo Leon, 66238, Mexico
- Department of Manufacturing and Industrial Engineering, University of Texas Rio Grande Valley, Brownsville, TX, 78520, USA
| | - Ram Manohar Yadav
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Department of Physics, VSSD College, Kanpur, Uttar Pradesh, 208002, India
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
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Panda MR, Kathribail AR, Modak B, Sau S, Dutta DP, Mitra S. Electrochemical properties of biomass-derived carbon and its composite along with Na2Ti3O7 as potential high-performance anodes for Na-ion and Li-ion batteries. Electrochim Acta 2021. [DOI: 10.1016/j.electacta.2021.139026] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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28
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Wang J, Teng C, Zhang Z, Chen W, Tan J, Pan Y, Zhang R, Zhou H, Ding B, Cheng HM, Liu B. A Scalable Artificial Neuron Based on Ultrathin Two-Dimensional Titanium Oxide. ACS NANO 2021; 15:15123-15131. [PMID: 34534433 DOI: 10.1021/acsnano.1c05565] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A spiking neural network consists of artificial synapses and neurons and may realize human-level intelligence. Unlike the widely reported artificial synapses, the fabrication of large-scale artificial neurons with good performance is still challenging due to the lack of a suitable material system and integration method. Here, we report an ultrathin (less than10 nm) and inch-size two-dimensional (2D) oxide-based artificial neuron system produced by a controllable assembly of solution-processed 2D monolayer TiOx nanosheets. Artificial neuron devices based on such 2D TiOx films show a high on/off ratio of 109 and a volatile resistance switching phenomenon. The devices can not only emulate the leaky integrate-and-fire activity but also self-recover without additional circuits for sensing and reset. Moreover, the artificial neuron arrays are fabricated and exhibited good uniformity, indicating their large-area integration potential. Our results offer a strategy for fabricating large-scale and ultrathin 2D material-based artificial neurons and 2D spiking neural networks.
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Affiliation(s)
- Jingyun Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Zhiyuan Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Yikun Pan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Heyuan Zhou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Baofu Ding
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
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Gautam C, Chelliah S. Methods of hexagonal boron nitride exfoliation and its functionalization: covalent and non-covalent approaches. RSC Adv 2021; 11:31284-31327. [PMID: 35496870 PMCID: PMC9041435 DOI: 10.1039/d1ra05727h] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2021] [Accepted: 08/26/2021] [Indexed: 12/31/2022] Open
Abstract
The exfoliation of two-dimensional (2D) hexagonal boron nitride nanosheets (h-BNNSs) from bulk hexagonal boron nitride (h-BN) materials has received intense interest owing to their fascinating physical, chemical, and biological properties. Numerous exfoliation techniques offer scalable approaches for harvesting single-layer or few-layer h-BNNSs. Their structure is very comparable to graphite, and they have numerous significant applications owing to their superb thermal, electrical, optical, and mechanical performance. Exfoliation from bulk stacked h-BN is the most cost-effective way to obtain large quantities of few layer h-BN. Herein, numerous methods have been discussed to achieve the exfoliation of h-BN, each with advantages and disadvantages. Herein, we describe the existing exfoliation methods used to fabricate single-layer materials. Besides exfoliation methods, various functionalization methods, such as covalent, non-covalent, and Lewis acid-base approaches, including physical and chemical methods, are extensively described for the preparation of several h-BNNS derivatives. Moreover, the unique and potent characteristics of functionalized h-BNNSs, like enhanced solubility in water, improved thermal conductivity, stability, and excellent biocompatibility, lead to certain extensive applications in the areas of biomedical science, electronics, novel polymeric composites, and UV photodetectors, and these are also highlighted.
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Affiliation(s)
- Chandkiram Gautam
- Advanced Glass and Glass Ceramics Research Laboratory, Department of Physics, University of Lucknow Lucknow 226007 Uttar Pradesh India
| | - Selvam Chelliah
- Department of Pharmaceutical Sciences, Texas Southern University Houston USA
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30
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Zhang R, Chen W, Teng C, Liao W, Liu B, Cheng HM. Realization of a non-markov chain in a single 2D mineral RRAM. Sci Bull (Beijing) 2021; 66:1634-1640. [PMID: 36654297 DOI: 10.1016/j.scib.2021.04.025] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 01/18/2021] [Accepted: 04/04/2021] [Indexed: 01/20/2023]
Abstract
The non-Markov process exists widely in thermodymanic process, while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices have the potential for next-generation computing systems with much-reduced complexity. Here, we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure. We find that the potassium ions (K+) in 2D mica gradually move in the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is changed by an electric field, and the 2D-mica RRAM has both single and double memory windows, a high on/off ratio, decent stability, and repeatability. This is the first time a non-Markov chain process has been established in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers an intrinsic inner ionic conductivity of 2D mica, but also opens the door for the production of such RRAM devices with numerous functions and applications.
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Affiliation(s)
- Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wugang Liao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
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Ding B, Pan Y, Zhang Z, Lan T, Huang Z, Lu B, Liu B, Cheng HM. Largely Tunable Magneto-Coloration of Monolayer 2D Materials via Size Tailoring. ACS NANO 2021; 15:9445-9452. [PMID: 33861565 DOI: 10.1021/acsnano.1c02259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Magnetically influenced light-matter interaction provides a contactless, noninvasive and power-free way for material characterization and light modulation. Shape anisotropy of active materials mainly determines the sensitivity of magneto-optic response, thereby making magnetic two-dimensional (2D) materials suitable in achieving the giant magneto-birefringence effect as discovered recently. Consequently, relationship between magneto-birefringence response and shape anisotropy of 2D materials is critical but has remained elusive, restricting its widespread applications. Here, we report the highly sensitive and largely tunable magneto-coloration via manipulating the shape-anisotropy of magnetic 2D materials. We reveal a quadratic increasing relationship between the magneto-optic Cotton-Mouton coefficient and the lateral size of 2D materials and achieve a more than one order of magnitude tunable response. This feature enables the engineerable transmissive magneto-coloration of 2D materials by tailoring their shape anisotropy. Our work deepens the understanding of the tunability of magneto-optic response by size effect of active materials, offering various opportunities for their applications in vast areas where color is concerned.
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Affiliation(s)
- Baofu Ding
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yikun Pan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Zehao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Tianshu Lan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Ziyang Huang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Beibei Lu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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Cai Z, Lai Y, Zhao S, Zhang R, Tan J, Feng S, Zou J, Tang L, Lin J, Liu B, Cheng HM. Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides. Natl Sci Rev 2021; 8:nwaa115. [PMID: 34691588 PMCID: PMC8288458 DOI: 10.1093/nsr/nwaa115] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Revised: 04/20/2020] [Accepted: 05/18/2020] [Indexed: 12/24/2022] Open
Abstract
Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called 'dissolution-precipitation' (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.
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Affiliation(s)
- Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Zou
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua−Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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Nguyen DT, Ting HA, Su YH, Hofmann M, Hsieh YP. Additive-Enhanced Exfoliation for High-Yield 2D Materials Production. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:601. [PMID: 33670883 PMCID: PMC7997357 DOI: 10.3390/nano11030601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Revised: 02/23/2021] [Accepted: 02/25/2021] [Indexed: 11/17/2022]
Abstract
The success of van-der-Waals electronics, which combine large-scale-deposition capabilities with high device performance, relies on the efficient production of suitable 2D materials. Shear exfoliation of 2D materials' flakes from bulk sources can generate 2D materials with low amounts of defects, but the production yield has been limited below industry requirements. Here, we introduce additive-assisted exfoliation (AAE) as an approach to significantly increase the efficiency of shear exfoliation and produce an exfoliation yield of 30%. By introducing micrometer-sized particles that do not exfoliate, the gap between rotor and stator was dynamically reduced to increase the achievable shear rate. This enhancement was applied to WS2 and MoS2 production, which represent two of the most promising 2D transition-metal dichalcogenides. Spectroscopic characterization and cascade centrifugation reveal a consistent and significant increase in 2D material concentrations across all thickness ranges. Thus, the produced WS2 films exhibit high thickness uniformity in the nanometer-scale and can open up new routes for 2D materials production towards future applications.
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Affiliation(s)
- Dinh-Tuan Nguyen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan; (D.-T.N.); (Y.-H.S.)
| | - Hsiang-An Ting
- Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan;
| | - Yen-Hsun Su
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan; (D.-T.N.); (Y.-H.S.)
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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34
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Liu G, Chen XQ, Liu B, Ren W, Cheng HM. Six-membered-ring inorganic materials: definition and prospects. Natl Sci Rev 2021; 8:nwaa248. [PMID: 34691562 PMCID: PMC8294346 DOI: 10.1093/nsr/nwaa248] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 07/17/2020] [Accepted: 08/06/2020] [Indexed: 11/17/2022] Open
Abstract
The six-membered ring (SMR) is a common structure unit for numerous material systems. These materials include, but are not limited to, the typical two-dimensional materials such as graphene, h-BN, and transition metal dichalcogenides, as well as three-dimensional materials such as beryllium, magnesium, MgB2 and Bi2Se3. Although many of these materials have already become 'stars' in materials science and condensed-matter physics, little attention has been paid to the roles of the SMR unit across a wide range of compositions and structures. In this article, we systematically analyze these materials with respect to their very basic SMR structural unit, which has been found to play a deterministic role in the occurrence of many intriguing properties and phenomena, such as Dirac electronic and phononic spectra, superconductivity and topology. As a result, we have defined this group of materials as SMR inorganic materials, opening up a new perspective on materials research and development. With their unique properties, SMR materials deserve wide attention and in-depth investigation from materials design, new physical discoveries to target-wizard applications. It is expected that SMR materials will find niche applications in next-generation information technology, renewable energy, space, etc.
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Affiliation(s)
- Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
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35
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Hassan K, Nine MJ, Tung TT, Stanley N, Yap PL, Rastin H, Yu L, Losic D. Functional inks and extrusion-based 3D printing of 2D materials: a review of current research and applications. NANOSCALE 2020; 12:19007-19042. [PMID: 32945332 DOI: 10.1039/d0nr04933f] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Graphene and related 2D materials offer an ideal platform for next generation disruptive technologies and in particular the potential to produce printed electronic devices with low cost and high throughput. Interest in the use of 2D materials to create functional inks has exponentially increased in recent years with the development of new ink formulations linked with effective printing techniques, including screen, gravure, inkjet and extrusion-based printing towards low-cost device manufacturing. Exfoliated, solution-processed 2D materials formulated into inks permits additive patterning onto both rigid and conformable substrates for printed device design with high-speed, large-scale and cost-effective manufacturing. Each printing technique has some sort of clear advantages over others that requires characteristic ink formulations according to their individual operational principles. Among them, the extrusion-based 3D printing technique has attracted heightened interest due to its ability to create three-dimensional (3D) architectures with increased surface area facilitating the design of a new generation of 3D devices suitable for a wide variety of applications. There still remain several challenges in the development of 2D material ink technologies for extrusion printing which must be resolved prior to their translation into large-scale device production. This comprehensive review presents the current progress on ink formulations with 2D materials and their broad practical applications for printed energy storage devices and sensors. Finally, an outline of the challenges and outlook for extrusion-based 3D printing inks and their place in the future printed devices ecosystem is presented.
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Affiliation(s)
- Kamrul Hassan
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Md Julker Nine
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Tran Thanh Tung
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Nathan Stanley
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Pei Lay Yap
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Hadi Rastin
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Le Yu
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
| | - Dusan Losic
- School of Chemical Engineering and Advanced Materials, The University of Adelaide, Adelaide, SA 5005, Australia. and ARC Research Hub for Graphene Enabled Industry Transformation, The University of Adelaide, Adelaide, SA 5005, Australia
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36
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Feng S, Tan J, Zhao S, Zhang S, Khan U, Tang L, Zou X, Lin J, Cheng HM, Liu B. Synthesis of Ultrahigh-Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003357. [PMID: 32743967 DOI: 10.1002/smll.202003357] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 06/12/2020] [Indexed: 06/11/2023]
Abstract
Monolayer transition metal dichalcogenides are 2D materials with many potential applications. Chemical vapor deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, thiol is proposed to be used as a liquid precursor for CVD growth of high quality and uniform 2D MoS2 . Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2 . Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2 , resulting in high-quality MoS2 . This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.
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Affiliation(s)
- Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shuqing Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Usman Khan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junhao Lin
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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37
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Lan T, Ding B, Liu B. Magneto‐optic effect of two‐dimensional materials and related applications. NANO SELECT 2020. [DOI: 10.1002/nano.202000032] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022] Open
Affiliation(s)
- Tianshu Lan
- Tsinghua‐Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen 518055 China
| | - Baofu Ding
- Tsinghua‐Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen 518055 China
| | - Bilu Liu
- Tsinghua‐Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen 518055 China
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38
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Ding B, Kuang W, Pan Y, Grigorieva IV, Geim AK, Liu B, Cheng HM. Giant magneto-birefringence effect and tuneable colouration of 2D crystal suspensions. Nat Commun 2020; 11:3725. [PMID: 32709947 PMCID: PMC7381639 DOI: 10.1038/s41467-020-17589-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2020] [Accepted: 07/03/2020] [Indexed: 11/16/2022] Open
Abstract
One of the long-sought-after goals in light manipulation is tuning of transmitted interference colours. Previous approaches toward this goal include material chirality, strain and electric-field controls. Alternatively, colour control by magnetic field offers contactless, non-invasive and energy-free advantages but has remained elusive due to feeble magneto-birefringence in conventional transparent media. Here we demonstrate an anomalously large magneto-birefringence effect in transparent suspensions of magnetic two-dimensional crystals, which arises from a combination of a large Cotton-Mouton coefficient and relatively high magnetic saturation birefringence. The effect is orders of magnitude stronger than those previously demonstrated for transparent materials. The transmitted colours of the suspension can be continuously tuned over two-wavelength cycles by moderate magnetic fields below 0.8 T. The work opens a new avenue to tune transmitted colours, and can be further extended to other systems with artificially engineered magnetic birefringence.
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Affiliation(s)
- Baofu Ding
- Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - Wenjun Kuang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Yikun Pan
- Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China
| | - I V Grigorieva
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - A K Geim
- Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China.
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
| | - Bilu Liu
- Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China.
| | - Hui-Ming Cheng
- Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China.
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
- Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK.
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39
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Zhang C, Luo Y, Tan J, Yu Q, Yang F, Zhang Z, Yang L, Cheng HM, Liu B. High-throughput production of cheap mineral-based two-dimensional electrocatalysts for high-current-density hydrogen evolution. Nat Commun 2020; 11:3724. [PMID: 32709937 PMCID: PMC7381654 DOI: 10.1038/s41467-020-17121-8] [Citation(s) in RCA: 61] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2020] [Accepted: 06/09/2020] [Indexed: 12/02/2022] Open
Abstract
The high-throughput scalable production of cheap, efficient and durable electrocatalysts that work well at high current densities demanded by industry is a great challenge for the large-scale implementation of electrochemical technologies. Here we report the production of a two-dimensional molybdenum disulfide-based ink-type electrocatalyst by a scalable exfoliation technique followed by a thermal treatment. The catalyst delivers a high current density of 1000 mA cm-2 at an overpotential of 412 mV for the hydrogen evolution. Using the same method, we produce a cheap mineral-based catalyst possessing excellent performance for high-current-density hydrogen evolution. Noteworthy, production rate of this catalyst is one to two orders of magnitude higher than those previously reported, and price of the mineral is five orders of magnitude lower than commercial Pt electrocatalysts. These advantages indicate the huge potentials of this method and of mineral-based cheap and abundant natural resources as catalysts in the electrochemical industry.
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Affiliation(s)
- Chi Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qiangmin Yu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Fengning Yang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Zhiyuan Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liusi Yang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Liaoning, 110016, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China.
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40
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Tang L, Li T, Luo Y, Feng S, Cai Z, Zhang H, Liu B, Cheng HM. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides. ACS NANO 2020; 14:4646-4653. [PMID: 32299213 DOI: 10.1021/acsnano.0c00296] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.
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Affiliation(s)
- Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Tao Li
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Hang Zhang
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Liaoning 110016, P. R. China
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Novoselov KS, Ge Q, Andreeva DV. Grinding exfoliation for scalable production of 2D materials. Natl Sci Rev 2020; 7:559-560. [PMID: 34692074 PMCID: PMC8288865 DOI: 10.1093/nsr/nwz202] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Kostya S Novoselov
- Department of Materials Science and Engineering, National University of Singapore, Singapore
- National Graphene Institute, University of Manchester, UK
- Chongqing 2D Materials Institute, China
| | - Qi Ge
- Chongqing 2D Materials Institute, China
| | - Daria V Andreeva
- Department of Materials Science and Engineering, National University of Singapore, Singapore
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