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Kim M, Son JY. Conducting atomic force microscopy studies on domain wall currents of Bi 5Ti 3FeO 15 nanodots fabricated by anodic aluminum oxide nanotemplate and sol-gel process. Microsc Res Tech 2024; 87:1534-1540. [PMID: 38420741 DOI: 10.1002/jemt.24539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 02/20/2024] [Accepted: 02/20/2024] [Indexed: 03/02/2024]
Abstract
We investigated the local current characteristics of Bi5Ti3FeO15 (BTFO) nanodots on Nb-doped SrTiO3 substrates affected by their ferroelectric domain structures and domain walls. The BTFO nanodots with a diameter of about 50 nm were fabricated by anodic aluminum oxide nanotemplates and a BTFO sol-gel process. Based on a piezoresponse force microscope, it was confirmed that domain walls were formed in the ferroelectric domain structures of the epitaxial BTFO nanodots. Current changes due to ferroelectric tunneling junctions according to ferroelectric polarizations in epitaxial BTFO nanodots were confirmed by conduction atomic force microscopy. In particular, the domain walls formed in the epitaxial BTFO nanodots formed high currents compared to the currents in ferroelectric tunneling junctions due to polarizations. RESEARCH HIGHLIGHTS: Ferroelectric Bi5Ti3FeO15 nanodots with a diameter of 50 nm. Ferroelectric domain structures observed with piezoresponse force microscopy. High domain wall currents observed at domain boundaries observed with conducting atomic force microscopy.
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Affiliation(s)
- Minsoo Kim
- Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin, Korea
| | - Jong Yeog Son
- Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin, Korea
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2
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Hussain S, Awan SU, Mumtaz A, Siddique R, Aftab M, Hasanain SK. Investigation of electronic, ferroelectric and local electrical conduction behavior of RF sputtered BiFeO 3thin films. NANOTECHNOLOGY 2024; 35:295704. [PMID: 38631335 DOI: 10.1088/1361-6528/ad3fc6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2024] [Accepted: 04/17/2024] [Indexed: 04/19/2024]
Abstract
Most of the applied research on BiFeO3(BFO) focuses on magnetoelectric and spintronic applications. This calls for a detailed grasp of multiferroic and conduction properties. BFO thin films with (100) epitaxial growth has been deposited on a LaNiO3(LNO) buffered Pt/Ti/SiO2/Si(100) substrate using RF magnetron sputtering. The film formed at 15 mTorr, 570 °C, and with Ar/O24:1 had a reasonably high degree of (100)-preferential orientation, the least surface roughness, and a densely packed structure. We obtained ferroelectric loops with strong polarization (150μC cm-2). The leakage current density is as low as 10-2A cm-2at 100 kV cm-1, implying that space-charge-limited bulk conduction (SCLC) was the primary conduction channel for carriers within BFO films. Local electrical conduction behavior demonstrates that at lower voltages, the grain boundary dominates electrical conduction and is linked to the displacement of oxygen vacancies in the grain boundary under external electric fields. We hope that a deeper understanding of the conduction mechanism will help integrate BFO into viable technologies.
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Affiliation(s)
- Shahzad Hussain
- Magnetism Lab, Department of physics, COMSATS University, Islamabad 44000, Pakistan
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
| | - Saif Ullah Awan
- Department of Electrical Engineering, NUST College of Electrical & Mechanical Engineering, National University of Sciences and Technology (NUST), Campus H-12, 44000 Islamabad, Pakistan
| | - Arif Mumtaz
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
| | - Resham Siddique
- Magnetism Lab, Department of physics, COMSATS University, Islamabad 44000, Pakistan
| | - Muhammad Aftab
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
- Department of Physics, Government Postgraduate College No. 1 Abbottabad, Pakistan
| | - S K Hasanain
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
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3
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Li Y, Hu D, Sun J, Zhang W, Jiang A. Ferroelectric Domain Wall Delayer and Low-Dropout Regulator. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19691-19698. [PMID: 38563689 DOI: 10.1021/acsami.3c18979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
A switching-type power converter providing an accurate and stable switching output voltage against line/load variations and power supply ripple is mostly complicated in system-on-chip power management integrated circuits (PMICs) within a limited occupation area. Here we fabricated domain wall (DW) nanodevices using an X-cut LiNbO3 thin film on silicon. The domain switching event occurs after a delay time predicted by Merz's law under the applied voltage. But the output current is irrespective of the applied voltage and can be adjusted by conducting wall width as well as input resistance in the circuit. The regulating currents appear repetitively across the volatile interfacial domains between the nanodevice and electrode under intermittently applied voltages. A wall-current-limited domain switching model is developed to explain the phenomenon. The multifunctional DW nanodevices with smaller occupation areas can serve as compact low-dropout regulators in PMICs, time-domain delayers in energy-efficient neural network systems, and on-chip electrostatic discharge protection besides nonvolatile memories and selectors.
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Affiliation(s)
- Yiming Li
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Di Hu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jie Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wendi Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
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4
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Song B, Park HS, Suh J, Seo J, Kim J, Yang CH. Three-Dimensional Visualization of Oxygen-Vacancy Migration and Redistribution in Ca-Substituted BiFeO 3. ACS NANO 2024; 18:1948-1957. [PMID: 38207107 DOI: 10.1021/acsnano.3c06675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Ionic movement has received renewed attention in recent years, particularly in the field of ferroelectric oxides, since it is intrinsically linked to chemical reaction kinetics and ferroelectric phase stability. The associated surface electrochemical processes coupled local ionic transport with an applied electric bias, exhibiting very high ionic mobility at room temperature based on a simple electrostatics scenario. However, few studies have focused on the applied-polarity dependence of ionic migration with directly visualized maps. Here, we use incorporated experiments of conductive scanning probe microscopy and time-of-flight secondary ion mass spectrometry to investigate oxygen ionic migration and cation redistribution in ionic oxides. The local concentrations of oxygen vacancies and other cation species are visualized by three-dimensional mappings, indicating that oxygen vacancies tend to be ejected toward the surface. An accumulation of oxygen vacancies and ionic redistribution strongly depend on tip polarity, thus corroborating their role in the electrochemical process. This work illustrates the interplay between ionic kinetics and electric switching.
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Affiliation(s)
- Bingqian Song
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Jeonghun Suh
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Jeongdae Seo
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Jihun Kim
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
- KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
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5
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Sun J, Li Y, Zhang B, Jiang A. High-Power LiNbO 3 Domain-Wall Nanodevices. ACS APPLIED MATERIALS & INTERFACES 2023; 15:8691-8698. [PMID: 36724474 DOI: 10.1021/acsami.2c20579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Wide band gap semiconductors keep on pushing the limits of power electronic devices to higher switching speeds and higher operating temperatures, including diodes and transistors on low-cost Si substrates. Alternatively, erasable conducting walls created within ferroelectric single-crystal films integrated on the Si platform have emerged as a promising gateway to adaptive nanoelectronics in sufficient output power, where the repetitive creation of highly charged domain walls (DWs) is particularly important to increase the wall current density. Here, we observe large conduction of the head-to-head DW at an optimized inclination angle of 15° within a LiNbO3 single crystal that is 3-4 orders of magnitude higher than that of the tail-to-tail DW. The wall conduction is diode-like with a linear current density of higher than 1 mA/μm and an on/off ratio of larger than 106 under the application of a repetitive switching voltage pulse in time less than 10 ns and an endurance number of higher than 105. The high-power diodes can not only perform direct data processing in high-density nonvolatile DW memories in fast operation speeds and low-energy consumption but also function as sensors in compact electromechanical systems, selectors in phase-change memory and resistive random-access memory, and half-wave/full-wave rectifiers in modern nanocircuits in dimensions approaching the thickness of the depletion layer below which the tradition p-n junction malfunctions.
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Affiliation(s)
- Jie Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
| | - Yiming Li
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
| | - Boyang Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
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6
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Smith KA, Ramkumar SP, Du K, Xu X, Cheong SW, Gilbert Corder SN, Bechtel HA, Nowadnick EA, Musfeldt JL. Real-Space Infrared Spectroscopy of Ferroelectric Domain Walls in Multiferroic h-(Lu,Sc)FeO 3. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7562-7571. [PMID: 36715538 DOI: 10.1021/acsami.2c19600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We employ synchrotron-based near-field infrared spectroscopy to image the phononic properties of ferroelectric domain walls in hexagonal (h) Lu0.6Sc0.4FeO3, and we compare our findings with a detailed symmetry analysis, lattice dynamics calculations, and prior models of domain-wall structure. Rather than metallic and atomically thin as observed in the rare-earth manganites, ferroelectric walls in h-Lu0.6Sc0.4FeO3 are broad and semiconducting, a finding that we attribute to the presence of an A-site substitution-induced intermediate phase that reduces strain and renders the interior of the domain wall nonpolar. Mixed Lu/Sc occupation on the A site also provides compositional heterogeneity over micron-sized length scales, and we leverage the fact that Lu and Sc cluster in different ratios to demonstrate that the spectral characteristics at the wall are robust even in different compositional regimes. This work opens the door to broadband imaging of physical and chemical heterogeneity in ferroics and represents an important step toward revealing the rich properties of these flexible defect states.
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Affiliation(s)
- Kevin A Smith
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sriram P Ramkumar
- Department of Materials Science and Engineering, University of California, Merced, California 95343 United States
| | - Kai Du
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Xianghan Xu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
- Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Stephanie N Gilbert Corder
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Hans A Bechtel
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Elizabeth A Nowadnick
- Department of Materials Science and Engineering, University of California, Merced, California 95343 United States
| | - Janice L Musfeldt
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
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7
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Yeo Y, Hwang SY, Yeo J, Kim J, Jang J, Park HS, Kim YJ, Le DD, Song K, Kim M, Ryu S, Choi SY, Yang CH. Configurable Crack Wall Conduction in a Complex Oxide. NANO LETTERS 2023; 23:398-406. [PMID: 36595450 DOI: 10.1021/acs.nanolett.2c02640] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO3 thin films grown on DyScO3 substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 104. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n+-n or n-n+ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects in crack walls to be 1.4 × 10-16 cm2/s, which is consistent with oxygen vacancy kinetics.
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Affiliation(s)
- Youngki Yeo
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Soo-Yoon Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Jinwook Yeo
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Jihun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Jinhyuk Jang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Yong-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Duc Duy Le
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Kyung Song
- Department of Materials Analysis and Evaluation, Korea Institute of Materials Science, Changwon51508, Republic of Korea
| | - Moonhong Kim
- Division of Mechanical Engineering, Korea Maritime & Ocean University, 727 Taejong-ro, Yeongdo-gu, Busan49112, South Korea
| | - Seunghwa Ryu
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon34141, Republic of Korea
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8
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Abramov A, Slautin B, Pryakhina V, Shur V, Kholkin A, Alikin D. Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite. SENSORS (BASEL, SWITZERLAND) 2023; 23:526. [PMID: 36617132 PMCID: PMC9823478 DOI: 10.3390/s23010526] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 12/25/2022] [Accepted: 12/29/2022] [Indexed: 06/17/2023]
Abstract
Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special interest due to the combination of high spontaneous polarization and antiferromagnetism, implying the possibility to provide multiple physical mechanisms for data storage and operations. Macroscopic conductivity measurements are often hampered to unambiguously characterize the electric transport, because of the strong influence of the diverse material microstructure. Here, we studied the electronic transport and resistive switching phenomena in polycrystalline bismuth ferrite using advanced conductive atomic force microscopy (CAFM) at different temperatures and electric fields. The new approach to the CAFM spectroscopy and corresponding data analysis are proposed, which allow deep insight into the material band structure at high lateral resolution. Contrary to many studies via macroscopic methods, postulating electromigration of the oxygen vacancies, we demonstrate resistive switching in bismuth ferrite to be caused by the pure electronic processes of trapping/releasing electrons and injection of the electrons by the scanning probe microscopy tip. The electronic transport was shown to be comprehensively described by the combination of the space charge limited current model, while a Schottky barrier at the interface is less important due to the presence of the built-in subsurface charge.
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9
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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10
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Wang J, Zhu R, Ma J, Yang H, Fan Y, Chen M, Sun Y, Gao P, Huang H, Zhang J, Ma J, Nan CW. Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18662-18670. [PMID: 35430815 DOI: 10.1021/acsami.1c25259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge to simultaneously implement the robust polarization and negligible leakage current in a ferroelectric thin film, both of which are significant for ferroelectric tunneling junctions with reliable operating performance. Here, we observe a large tunneling electroresistance effect of ∼1.0 × 104% across the BiFeO3 nanoisland edge, where the intrinsic ferroelectric polarization of the nanoisland makes a major contribution to tuning the barrier height. This phenomenon is beneficial from the artificially designed tunneling barrier between the nanoscale top electrode and the inclined conducting phase boundary, which is located between the rhombohedral-island and tetragonal-film matrix and arranged with the dislocation array. More significantly, the tunneling electroresistance effect is further improved to ∼1.6 × 104% by the introduction of photoinduced carriers, which are separated by the flexoelectric field arising from the dislocations.
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Affiliation(s)
- Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ruixue Zhu
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Ji Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- School of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
| | - Huayu Yang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yuanyuan Fan
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Mingfeng Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yuanwei Sun
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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11
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Deiana AM, Tran N, Agar J, Blott M, Di Guglielmo G, Duarte J, Harris P, Hauck S, Liu M, Neubauer MS, Ngadiuba J, Ogrenci-Memik S, Pierini M, Aarrestad T, Bähr S, Becker J, Berthold AS, Bonventre RJ, Müller Bravo TE, Diefenthaler M, Dong Z, Fritzsche N, Gholami A, Govorkova E, Guo D, Hazelwood KJ, Herwig C, Khan B, Kim S, Klijnsma T, Liu Y, Lo KH, Nguyen T, Pezzullo G, Rasoulinezhad S, Rivera RA, Scholberg K, Selig J, Sen S, Strukov D, Tang W, Thais S, Unger KL, Vilalta R, von Krosigk B, Wang S, Warburton TK. Applications and Techniques for Fast Machine Learning in Science. Front Big Data 2022; 5:787421. [PMID: 35496379 PMCID: PMC9041419 DOI: 10.3389/fdata.2022.787421] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Accepted: 01/31/2020] [Indexed: 01/10/2023] Open
Abstract
In this community review report, we discuss applications and techniques for fast machine learning (ML) in science-the concept of integrating powerful ML methods into the real-time experimental data processing loop to accelerate scientific discovery. The material for the report builds on two workshops held by the Fast ML for Science community and covers three main areas: applications for fast ML across a number of scientific domains; techniques for training and implementing performant and resource-efficient ML algorithms; and computing architectures, platforms, and technologies for deploying these algorithms. We also present overlapping challenges across the multiple scientific domains where common solutions can be found. This community report is intended to give plenty of examples and inspiration for scientific discovery through integrated and accelerated ML solutions. This is followed by a high-level overview and organization of technical advances, including an abundance of pointers to source material, which can enable these breakthroughs.
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Affiliation(s)
| | - Nhan Tran
- Fermi National Accelerator Laboratory, Batavia, IL, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, United States
| | - Joshua Agar
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, United States
| | | | | | - Javier Duarte
- Department of Physics, University of California, San Diego, San Diego, CA, United States
| | - Philip Harris
- Massachusetts Institute of Technology, Cambridge, MA, United States
| | - Scott Hauck
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, United States
| | - Mia Liu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN, United States
| | - Mark S. Neubauer
- Department of Physics, University of Illinois Urbana-Champaign, Champaign, IL, United States
| | | | - Seda Ogrenci-Memik
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, United States
| | - Maurizio Pierini
- European Organization for Nuclear Research (CERN), Meyrin, Switzerland
| | - Thea Aarrestad
- European Organization for Nuclear Research (CERN), Meyrin, Switzerland
| | - Steffen Bähr
- Karlsruhe Institute of Technology, Karlsruhe, Germany
| | - Jürgen Becker
- Karlsruhe Institute of Technology, Karlsruhe, Germany
| | - Anne-Sophie Berthold
- Institute of Nuclear and Particle Physics, Technische Universität Dresden, Dresden, Germany
| | | | - Tomás E. Müller Bravo
- Department of Physics and Astronomy, University of Southampton, Southampton, United Kingdom
| | - Markus Diefenthaler
- Thomas Jefferson National Accelerator Facility, Newport News, VA, United States
| | - Zhen Dong
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, United States
| | - Nick Fritzsche
- Institute of Nuclear and Particle Physics, Technische Universität Dresden, Dresden, Germany
| | - Amir Gholami
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, United States
| | | | - Dongning Guo
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, United States
| | | | - Christian Herwig
- Fermi National Accelerator Laboratory, Batavia, IL, United States
| | - Babar Khan
- Department of Computer Science, Technical University Darmstadt, Darmstadt, Germany
| | - Sehoon Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, United States
| | - Thomas Klijnsma
- Fermi National Accelerator Laboratory, Batavia, IL, United States
| | - Yaling Liu
- Department of Bioengineering, Lehigh University, Bethlehem, PA, United States
| | - Kin Ho Lo
- Department of Physics, University of Florida, Gainesville, FL, United States
| | - Tri Nguyen
- Massachusetts Institute of Technology, Cambridge, MA, United States
| | | | | | - Ryan A. Rivera
- Fermi National Accelerator Laboratory, Batavia, IL, United States
| | - Kate Scholberg
- Department of Physics, Duke University, Durham, NC, United States
| | | | - Sougata Sen
- Birla Institute of Technology and Science, Pilani, India
| | - Dmitri Strukov
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, CA, United States
| | - William Tang
- Department of Physics, Princeton University, Princeton, NJ, United States
| | - Savannah Thais
- Department of Physics, Princeton University, Princeton, NJ, United States
| | | | - Ricardo Vilalta
- Department of Computer Science, University of Houston, Houston, TX, United States
| | - Belina von Krosigk
- Karlsruhe Institute of Technology, Karlsruhe, Germany
- Department of Physics, Universität Hamburg, Hamburg, Germany
| | - Shen Wang
- Department of Physics, University of Florida, Gainesville, FL, United States
| | - Thomas K. Warburton
- Department of Physics and Astronomy, Iowa State University, Ames, IA, United States
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12
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Wang J, Yang H, Wang Y, Fan Y, Liu D, Yang Y, Wu J, Chen M, Gao R, Huang H, Wang X, Hong J, Ma J, Zhang J, Nan CW. Polarization-switching pathway determined electrical transport behaviors in rhombohedral BiFeO 3 thin films. NANOSCALE 2021; 13:17746-17753. [PMID: 34668905 DOI: 10.1039/d1nr03993h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We investigated the polarization-switching pathway-dependent electrical transport behaviors in rhombohedral-phase BiFeO3 thin films with point contact geometry. By combining conducting-atomic force microscopy and piezoelectric force microscopy, we simultaneously obtained current-voltage curves and the corresponding domain patterns before and after the polarization switching. The results indicate that for the (001)-oriented film, the abrupt current (due to polarization reversing) increases with the enhanced switching voltage for 109° and 180° switching events. More importantly, the abrupt current can be further improved in (110)- and (111)-oriented thin films, which benefits from the stronger modulation of the interfacial Schottky barrier by the enhanced out-of-plane polarization magnitude. The current on-off ratio obtained in a ∼20 nm thick (111)-oriented BiFeO3 thin film at a readout voltage of ∼3 V exceeds (∼6 × 105)%, which is close to the result from a previous report on ultrathin tetragonal BiFeO3 thin films.
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Affiliation(s)
- Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Huayu Yang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Yue Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yuanyuan Fan
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Di Liu
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Yuben Yang
- Department of Physics, Beijing Normal University, 100875 Beijing, China
| | - Jialu Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Mingfeng Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Rongzhen Gao
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, 100875 Beijing, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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13
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Golde J, Rüsing M, Rix J, Eng LM, Koch E. Quantifying the refractive index of ferroelectric domain walls in periodically poled LiNbO 3 single crystals by polarization-sensitive optical coherence tomography. OPTICS EXPRESS 2021; 29:33615-33631. [PMID: 34809171 DOI: 10.1364/oe.432810] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Accepted: 07/29/2021] [Indexed: 06/13/2023]
Abstract
Domain walls (DWs) in ferroelectric (FE) and multiferroic materials possess an ever-growing potential as integrated functional elements, for instance in optoelectronic nanodevices. Mandatory, however, is the profound knowledge of the local-scale electronic and optical properties, especially at DWs that are still incompletely characterized to date. Here, we quantify the refractive index of individual FE DWs in periodically-poled LiNbO3 (PPLN) single crystals. When applying polarization-sensitive optical coherence tomography (PS-OCT) at 1300 nm using circular light polarization, we are able to probe the relevant electro-optical properties close to and at the DWs, including also their ordinary and extraordinary contributions. When comparing to numerical calculations, we conclude that the DW signals recorded for ordinary and extraordinary polarization stem from an increased refractive index of at least Δn > 2·10-3 that originates from a tiny region of < 30 nm in width. PS-OCT hence provides an extremely valuable tool to decipher and quantify subtle changes of refractive index profiles for both inorganic and biomedical nanomaterial systems.
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14
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Deng S, Li J, Småbråten DR, Shen S, Wang W, Zhao J, Tao J, Aschauer U, Chen J, Zhu Y, Zhu J. Critical Role of Sc Substitution in Modulating Ferroelectricity in Multiferroic LuFeO 3. NANO LETTERS 2021; 21:6648-6655. [PMID: 34283627 DOI: 10.1021/acs.nanolett.1c02123] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Understanding how individual dopants or substitutional atoms interact with host lattices enables us to manipulate, control, and improve the functionality of materials. However, because of the intimate coupling among various degrees of freedom in multiferroics, the atomic-scale influence of individual foreign atoms has remained elusive. Here, we unravel the critical roles of individual Sc substitutional atoms in modulating ferroelectricity at the atomic scale of typical multiferroics, Lu1-xScxFeO3, by combining advanced microscopy and theoretical studies. Atomic variations in polar displacement of intriguing topological vortex domains stabilized by Sc substitution are directly correlated with Sc atom-mediated local chemical and electronic fluctuations. The local FeO5 trimerization magnitude and Lu/Sc-O hybridization strength are found to be significantly reinforced by Sc, clarifying the origin of the strong dependence of improper ferroelectricity on Sc content. This study could pave the way for correlating dopant-regulated atomic-scale local structures with global properties to engineer emergent functionalities of numerous chemically doped functional materials.
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Affiliation(s)
- Shiqing Deng
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Jun Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Didrik R Småbråten
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, 3012 Bern, Switzerland
| | - Shoudong Shen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wenbin Wang
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Jun Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jing Tao
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Ulrich Aschauer
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, 3012 Bern, Switzerland
| | - Jun Chen
- School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Jing Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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15
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Ghara S, Geirhos K, Kuerten L, Lunkenheimer P, Tsurkan V, Fiebig M, Kézsmárki I. Giant conductivity of mobile non-oxide domain walls. Nat Commun 2021; 12:3975. [PMID: 34172747 PMCID: PMC8233373 DOI: 10.1038/s41467-021-24160-2] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2020] [Accepted: 05/31/2021] [Indexed: 02/06/2023] Open
Abstract
Atomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.
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Affiliation(s)
- S. Ghara
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| | - K. Geirhos
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| | - L. Kuerten
- grid.5801.c0000 0001 2156 2780Department of Materials, ETH Zurich, Zurich, Switzerland
| | - P. Lunkenheimer
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
| | - V. Tsurkan
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany ,grid.450974.bInstitute of Applied Physics, Chisinau, Republic of Moldova
| | - M. Fiebig
- grid.5801.c0000 0001 2156 2780Department of Materials, ETH Zurich, Zurich, Switzerland
| | - I. Kézsmárki
- grid.7307.30000 0001 2108 9006Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg, Germany
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16
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Zhang HY, Chen XG, Tang YY, Liao WQ, Di FF, Mu X, Peng H, Xiong RG. PFM (piezoresponse force microscopy)-aided design for molecular ferroelectrics. Chem Soc Rev 2021; 50:8248-8278. [PMID: 34081064 DOI: 10.1039/c9cs00504h] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred years since Valasek first discovered ferroelectricity in the molecular compound Rochelle salt. Recently, the proposal of ferroelectrochemistry has injected new vigor into this century-old research field. It should be highlighted that piezoresponse force microscopy (PFM) technique, as a non-destructive imaging and manipulation method for ferroelectric domains at the nanoscale, can significantly speed up the design rate of molecular ferroelectrics as well as enhance the ferroelectric and piezoelectric performances relying on domain engineering. Herein, we provide a brief review of the contribution of the PFM technique toward assisting the design and performance optimization of molecular ferroelectrics. Relying on the relationship between ferroelectric domains and crystallography, together with other physical characteristics such as domain switching and piezoelectricity, we believe that the PFM technique can be effectively applied to assist the design of high-performance molecular ferroelectrics equipped with multifunctionality, and thereby facilitate their practical utilization in optics, electronics, magnetics, thermotics, and mechanics among others.
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Affiliation(s)
- Han-Yue Zhang
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, P. R. China.
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17
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Kumari A, Kumari K, Aljawfi RN, Alvi PA, Dalela S, Ahmad MM, Chawla AK, Kumar R, Vij A, Kumar S. Role of La substitution on structural, optical, and multiferroic properties of BiFeO3 nanoparticles. APPLIED NANOSCIENCE 2021. [DOI: 10.1007/s13204-021-01844-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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18
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Yang B, Jin L, Wei R, Tang X, Hu L, Tong P, Yang J, Song W, Dai J, Zhu X, Sun Y, Zhang S, Wang X, Cheng Z. Chemical Solution Route for High-Quality Multiferroic BiFeO 3 Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e1903663. [PMID: 31729163 DOI: 10.1002/smll.201903663] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2019] [Revised: 09/07/2019] [Indexed: 06/10/2023]
Abstract
Bismuth ferrite (BiFeO3 ) has recently become interesting as a room-temperature multiferroic material, and a variety of prototype devices have been designed based on its thin films. A low-cost and simple processing technique for large-area and high-quality BiFeO3 thin films that is compatible with current semiconductor technologies is therefore urgently needed. Development of BiFeO3 thin films is summarized with a specific focus on the chemical solution route. By a systematic analysis of the recent progress in chemical-route-derived BiFeO3 thin films, the challenges of these films are highlighted. An all-solution chemical-solution deposition (AS-CSD) for BiFeO3 thin films with different orientation epitaxial on various oxide bottom electrodes is introduced and a comprehensive study of the growth, structure, and ferroelectric properties of these films is provided. A facile low-cost route to prepare large-area high-quality epitaxial BFO thin films with a comprehensive understanding of the film thickness, stoichiometry, crystal orientation, ferroelectric properties, and bottom electrode effects on evolutions of microstructures is provided. This work paves the way for the fabrication of devices based on BiFeO3 thin films.
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Affiliation(s)
- Bingbing Yang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Linghua Jin
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Renhuai Wei
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xianwu Tang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Ling Hu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Peng Tong
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jie Yang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Wenhai Song
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jianming Dai
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xuebin Zhu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yuping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australia Institute for Innovation Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW, 2500, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials, Australia Institute for Innovation Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW, 2500, Australia
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials, Australia Institute for Innovation Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW, 2500, Australia
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19
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Chen S, Yuan S, Hou Z, Tang Y, Zhang J, Wang T, Li K, Zhao W, Liu X, Chen L, Martin LW, Chen Z. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000857. [PMID: 32815214 DOI: 10.1002/adma.202000857] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 04/17/2020] [Indexed: 06/11/2023]
Abstract
Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
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Affiliation(s)
- Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Jinping Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tao Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Weiwei Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xingjun Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
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20
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21
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Li T, Bandari VK, Hantusch M, Xin J, Kuhrt R, Ravishankar R, Xu L, Zhang J, Knupfer M, Zhu F, Yan D, Schmidt OG. Integrated molecular diode as 10 MHz half-wave rectifier based on an organic nanostructure heterojunction. Nat Commun 2020; 11:3592. [PMID: 32680989 PMCID: PMC7368027 DOI: 10.1038/s41467-020-17352-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2019] [Accepted: 06/23/2020] [Indexed: 11/23/2022] Open
Abstract
Considerable efforts have been made to realize nanoscale diodes based on single molecules or molecular ensembles for implementing the concept of molecular electronics. However, so far, functional molecular diodes have only been demonstrated in the very low alternating current frequency regime, which is partially due to their extremely low conductance and the poor degree of device integration. Here, we report about fully integrated rectifiers with microtubular soft-contacts, which are based on a molecularly thin organic heterojunction and are able to convert alternating current with a frequency of up to 10 MHz. The unidirectional current behavior of our devices originates mainly from the intrinsically different surfaces of the bottom planar and top microtubular Au electrodes while the excellent high frequency response benefits from the charge accumulation in the phthalocyanine molecular heterojunction, which not only improves the charge injection but also increases the carrier density. The demand for miniaturization of electronics has been motivating a growing interest in high-performance molecular electronics. Li, Bandari et al. report a fully integrated molecular rectifier based on a molecular heterojunction and microtubular electrode enabling high frequency operation at more than 10 MHz.
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Affiliation(s)
- Tianming Li
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany.,Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Vineeth Kumar Bandari
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany.,Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Martin Hantusch
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Jianhui Xin
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
| | - Robert Kuhrt
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Rachappa Ravishankar
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Longqian Xu
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Jidong Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
| | - Martin Knupfer
- Institute for Solid State Research, Leibniz IFW Dresden, 01069, Dresden, Germany
| | - Feng Zhu
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany. .,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany. .,Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany. .,State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China.
| | - Donghang Yan
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
| | - Oliver G Schmidt
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09107, Chemnitz, Germany.,Institute for Integrative Nanosciences, Leibniz IFW Dresden, 01069, Dresden, Germany.,Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
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22
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Barzilay M, Ivry Y. Formation and manipulation of domain walls with 2 nm domain periodicity in BaTiO 3 without contact electrodes. NANOSCALE 2020; 12:11136-11142. [PMID: 32400795 DOI: 10.1039/d0nr01747g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interfaces at the two-dimensional limit in oxide materials exhibit a wide span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can be moved deterministically with external voltage, while they remain at place after voltage removal, paving the way to novel neuromorphic and low-power data-processing technologies. Ferroic domains arise to release strain, which depends on material thickness, following Kittel's scaling law. Hence, a major hurdle is to reduce the device footprint for a given thickness, i.e., to form and move high-density domain walls. Here, we used transmission electron microscopy to produce domain walls with periodicity as high as 2 nm without the use of contact electrodes, while observing their formation and dynamics in situ in BaTiO3. Large-area coverage of the engineered domain walls was demonstrated. The domain-wall density was found to increase with increasing effective stress, until arriving at a saturation value that reflects 150-fold effective stress enhancement. Exceeding this value resulted in strain release by domain rotation. In addition to revealing this multiscale strain-releasing mechanism, we offer a device design that allows controllable switching of domain-walls with 2 nm periodicity, reflecting a potential 144 Tb per inch2 neuromorphic network.
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Affiliation(s)
- Maya Barzilay
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel. and Solid State Institute, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Yachin Ivry
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel. and Solid State Institute, Technion - Israel Institute of Technology, Haifa 3200003, Israel
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23
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Yokota H, Matsumoto S, Hasegawa N, Salje EKH, Uesu Y. Enhancement of polar nature of domain boundaries in ferroelastic Pb 3(PO 4) 2by doping divalent-metal ions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:345401. [PMID: 32315998 DOI: 10.1088/1361-648x/ab8b9b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Accepted: 04/21/2020] [Indexed: 06/11/2023]
Abstract
The effect of doping metal ions in ferroelastic Pb3(PO4)2(PPO) on the polar nature of domain boundaries (DBs) was investigated using a second harmonic generation (SHG) microscope. It has been already reported that (DBs) of non-doped PPO is SH active and polar. The present study reveals that DBs of Ca-doped and Mg-doped PPO show greatly enhanced SH activity. This indicates that doping by metal ions enhances the polar nature of the DBs of PPO. This is important for future applications of DB nanotechnology. The enhancement of SH intensity is explained by a larger displacement of Ca2+and Mg2+ions in DBs due to smaller ionic radii. Analyses of the SH anisotropy experiments reveal that the symmetry-adaptedW-wall belongs to monoclinicmand the non-adaptedW'-wall to monoclinic 2. Both point groups are classified as the polar classes, which coincides with the case of pure PPO.
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Affiliation(s)
- Hiroko Yokota
- Department of Physics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba-shi, Chiba, Japan
- JST, PRESTO, 4-1-8 Honcho, Kawaguchi-shi, Saitama, Japan
| | - Suguru Matsumoto
- Department of Physics, Faculty of Science and Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba-shi, Chiba, Japan
| | - Nozomu Hasegawa
- Department of Physics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba-shi, Chiba, Japan
| | - E K H Salje
- Department of Earth Sciences, Cambridge University, Downing Street, Cambridge, United Kingdom
| | - Yoshiaki Uesu
- Department of Physics, Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, Japan
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24
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Investigation of Local Conduction Mechanisms in Ca and Ti-Doped BiFeO 3 Using Scanning Probe Microscopy Approach. NANOMATERIALS 2020; 10:nano10050940. [PMID: 32422891 PMCID: PMC7279369 DOI: 10.3390/nano10050940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Revised: 05/08/2020] [Accepted: 05/12/2020] [Indexed: 11/26/2022]
Abstract
In this work we demonstrate the role of grain boundaries and domain walls in the local transport properties of n- and p-doped bismuth ferrites, including the influence of these singularities on the space charge imbalance of the energy band structure. This is mainly due to the charge accumulation at domain walls, which is recognized as the main mechanism responsible for the electrical conductivity in polar thin films and single crystals, while there is an obvious gap in the understanding of the precise mechanism of conductivity in ferroelectric ceramics. The conductivity of the Bi0.95Ca0.05Fe1−xTixO3−δ (x = 0, 0.05, 0.1; δ = (0.05 − x)/2) samples was studied using a scanning probe microscopy approach at the nanoscale level as a function of bias voltage and chemical composition. The obtained results reveal a distinct correlation between electrical properties and the type of charged defects when the anion-deficient (x = 0) compound exhibits a three order of magnitude increase in conductivity as compared with the charge-balanced (x = 0.05) and cation-deficient (x = 0.1) samples, which is well described within the band diagram representation. The data provide an approach to control the transport properties of multiferroic bismuth ferrites through aliovalent chemical substitution.
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25
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Nataf GF, Guennou M. Optical studies of ferroelectric and ferroelastic domain walls. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:183001. [PMID: 32026848 DOI: 10.1088/1361-648x/ab68f3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recent studies carried out with atomic force microscopy or high-resolution transmission electron microscopy reveal that ferroic domain walls can exhibit different physical properties than the bulk of the domains, such as enhanced conductivity in insulators, or polar properties in non-polar materials. In this review we show that optical techniques, in spite of the diffraction limit, also provide key insights into the structure and physical properties of ferroelectric and ferroelastic domain walls. We give an overview of the uses, specificities and limits of these techniques, and emphasize the properties of the domain walls that they can probe. We then highlight some open questions of the physics of domain walls that could benefit from their use.
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Affiliation(s)
- G F Nataf
- Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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26
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Abstract
Superconducting domain boundaries were found in WO3-x and doped WO3. The charge carriers in WO3-type materials were identified by Schirmer and Salje as bipolarons. Several previous attempts to determine the electronic properties of polarons in WO3 failed until Bousque et al. (2020) reported a full first principle calculation of free polarons in WO3. They confirmed the model of Schirmer and Salje that each single polaron is centred around one tungsten position with surplus charges smeared over the adjacent eight tungsten positions. Small additional charges are distributed further apart. Further calculations to clarify the coupling mechanism between polaron to form bipolarons are not yet available. These calculations would help to identify the carrier distribution in Magneli clusters, which were shown recently to contain high carrier concentrations and may indicate totally localized superconductivity in non-percolating clusters.
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27
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Zheng M, Lin S, Xu L, Zhu L, Wang ZL. Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000928. [PMID: 32270901 DOI: 10.1002/adma.202000928] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/16/2020] [Accepted: 03/17/2020] [Indexed: 06/11/2023]
Abstract
Contact electrification (CE or triboelectrification) is a common phenomenon, which can occur for almost all types of materials. In previous studies, the CE between insulators and metals has been widely discussed, while CE involving semiconductors is only recently. Here, a tribo-current is generated by sliding an N-type diamond coated tip on a P-type or N-type Si wafers. The density of surface states of the Si wafer is changed by introducing different densities of doping. It is found that the tribo-current between two sliding semiconductors increases with increasing density of surface states of the semiconductor and the sliding load. The results suggest that the tribo-current is induced by the tribovoltaic effect, in which the electron-hole pairs at the sliding interface are excited by the energy release during friction, which may be due to the transition of electrons between the surface states during contact, or bond formation across the sliding interface. The electron-hole pairs at the sliding interface are subsequently separated by the built-in electric field at the PN or NN heterojunctions, which results in a tribo-current, in analogy to that which occurs in the photovoltaic effect.
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Affiliation(s)
- Mingli Zheng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shiquan Lin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liang Xu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Laipan Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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28
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Campanini M, Gradauskaite E, Trassin M, Yi D, Yu P, Ramesh R, Erni R, Rossell MD. Imaging and quantification of charged domain walls in BiFeO 3. NANOSCALE 2020; 12:9186-9193. [PMID: 32297890 DOI: 10.1039/d0nr01258k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Charged domain walls in ferroelectrics hold great promise for the design of novel electronic devices due to their enhanced local conductivity. In fact, charged domain walls show unique properties including the possibility of being created, moved and erased by an applied voltage. Here, we demonstrate that the charged domain walls are constituted by a core region where most of the screening charge is localized and such charge accumulation is responsible for their enhanced conductivity. In particular, the link between the local structural distortions and charge screening phenomena in 109° tail-to-tail domain walls of BiFeO3 is elucidated by a series of multiscale analysis performed by means of scanning probe techniques, including conductive atomic force microscopy (cAFM) and atomic resolution differential phase contrast scanning transmission electron microscopy (DPC-STEM). The results prove that an accumulation of oxygen vacancies occurs at the tail-to-tail domain walls as the leading charge screening process. This work constitutes a new insight in understanding the behavior of such complex systems and lays down the fundaments for their implementation into novel nanoelectronic devices.
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Affiliation(s)
- Marco Campanini
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstr. 129, 8600 Dübendorf, Switzerland.
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29
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Evans DM, Garcia V, Meier D, Bibes M. Domains and domain walls in multiferroics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0067] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
AbstractMultiferroics are materials combining several ferroic orders, such as ferroelectricity, ferro- (or antiferro-) magnetism, ferroelasticity and ferrotoroidicity. They are of interest both from a fundamental perspective, as they have multiple (coupled) non-linear functional responses providing a veritable myriad of correlated phenomena, and because of the opportunity to apply these functionalities for new device applications. One application is, for instance, in non-volatile memory, which has led to special attention being devoted to ferroelectric and magnetic multiferroics. The vision is to combine the low writing power of ferroelectric information with the easy, non-volatile reading of magnetic information to give a “best of both worlds” computer memory. For this to be realised, the two ferroic orders need to be intimately linked via the magnetoelectric effect. The magnetoelectric coupling – the way polarization and magnetization interact – is manifested by the formation and interactions of domains and domain walls, and so to understand how to engineer future devices one must first understand the interactions of domains and domain walls. In this article, we provide a short introduction to the domain formation in ferroelectrics and ferromagnets, as well as different microscopy techniques that enable the visualization of such domains. We then review the recent research on multiferroic domains and domain walls, including their manipulation and intriguing properties, such as enhanced conductivity and anomalous magnetic order. Finally, we discuss future perspectives concerning the field of multiferroic domain walls and emergent topological structures such as ferroelectric vortices and skyrmions.
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Affiliation(s)
- Donald M. Evans
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
| | - Vincent Garcia
- CNRS, Thales, Université Paris-Saclay, Unité Mixte de Physique, 91767 Palaiseau, France
| | - Dennis Meier
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
| | - Manuel Bibes
- CNRS, Thales, Université Paris-Saclay, Unité Mixte de Physique, 91767 Palaiseau, France
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30
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Ma HJH, Scott JF. Non-Ohmic Variable-Range Hopping and Resistive Switching in SrTiO_{3} Domain Walls. PHYSICAL REVIEW LETTERS 2020; 124:146601. [PMID: 32338966 DOI: 10.1103/physrevlett.124.146601] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2019] [Revised: 01/04/2020] [Accepted: 02/28/2020] [Indexed: 06/11/2023]
Abstract
We report observation of electric field driven conductivity with negative differential conductance and resistive switching in insulating SrTiO_{3} samples over a wide range of applied voltages at low temperatures. The observed current follows I=I_{0}exp[-(E^{*}/E)^{1/2}] at large applied electric field, corresponding to variable range hopping conduction with a Coulomb gap in domain walls. Our data are sufficient to discriminate unambiguously between Shklovskii and Mott hopping via their different electric field exponent. Under some conditions space-charge-limited currents are observed, and the charge mobility limit is determined to be in the range of 17 and 210 cm^{2}/Vs.
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Affiliation(s)
- H J Harsan Ma
- Low Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an 710071, China
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an 710071, China
| | - J F Scott
- Schools of Chemistry and Physics, St Andrews University, St. Andrews KY16 9SS, United Kingdom
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31
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Domain-wall pinning and defect ordering in BiFeO 3 probed on the atomic and nanoscale. Nat Commun 2020; 11:1762. [PMID: 32273515 PMCID: PMC7145836 DOI: 10.1038/s41467-020-15595-0] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2019] [Accepted: 03/06/2020] [Indexed: 11/08/2022] Open
Abstract
Electro-mechanical interactions between charged point defects and domain walls play a key role in the functional properties of bulk and thin-film ferroelectrics. While for perovskites the macroscopic implications of the ordering degree of defects on domain-wall pinning have been reported, atomistic details of these mechanisms remain unclear. Here, based on atomic and nanoscale analyses, we propose a pinning mechanism associated with conductive domain walls in BiFeO3, whose origin lies in the dynamic coupling of the p-type defects gathered in the domain-wall regions with domain-wall displacements under applied electric field. Moreover, we confirm that the degree of defect ordering at the walls, which affect the domain-wall conductivity, can be tuned by the cooling rate used during the annealing, allowing us to determine how this ordering affects the atomic structure of the walls. The results are useful in the design of the domain-wall architecture and dynamics for emerging nanoelectronic and bulk applications.
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32
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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33
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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34
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Pandey R, Vats G, Yun J, Bowen CR, Ho-Baillie AWY, Seidel J, Butler KT, Seok SI. Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807376. [PMID: 31441161 DOI: 10.1002/adma.201807376] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2018] [Revised: 03/23/2019] [Indexed: 06/10/2023]
Abstract
An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.
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Affiliation(s)
- Richa Pandey
- Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai, 400076, India
| | - Gaurav Vats
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jae Yun
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Chris R Bowen
- Materials Research Centre, Department of Mechanical Engineering, University of Bath, Bath, BA2 7AY, UK
| | - Anita W Y Ho-Baillie
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Keith Tobias Butler
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Oxford Didcot, Oxfordshire, OX11 0QX, UK
| | - Sang Il Seok
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50, Ulsan, 44919, South Korea
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35
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Functional Ferroic Domain Walls for Nanoelectronics. MATERIALS 2019; 12:ma12182927. [PMID: 31510049 PMCID: PMC6766344 DOI: 10.3390/ma12182927] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 09/05/2019] [Accepted: 09/06/2019] [Indexed: 11/17/2022]
Abstract
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
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36
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Zhang Y, Lu H, Yan X, Cheng X, Xie L, Aoki T, Li L, Heikes C, Lau SP, Schlom DG, Chen L, Gruverman A, Pan X. Intrinsic Conductance of Domain Walls in BiFeO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902099. [PMID: 31353633 DOI: 10.1002/adma.201902099] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2019] [Revised: 06/30/2019] [Indexed: 06/10/2023]
Abstract
Ferroelectric domain walls exhibit a number of new functionalities that are not present in their host material. One of these functional characteristics is electrical conductivity that may lead to future device applications. Although progress has been made, the intrinsic conductivity of BiFeO3 domain walls is still elusive. Here, the intrinsic conductivity of 71° and 109° domain walls is reported by probing the local conductance over a cross section of the BiFeO3 /TbScO3 (001) heterostructure. Through a combination of conductive atomic force microscopy, high-resolution electron energy loss spectroscopy, and phase-field simulations, it is found that the 71° domain wall has an inherently charged nature, while the 109° domain wall is close to neutral. Hence, the intrinsic conductivity of the 71° domain walls is an order of magnitude larger than that of the 109° domain walls associated with bound-charge-induced bandgap lowering. Furthermore, the interaction of adjacent 71° domain walls and domain wall curvature leads to a variation of the charge distribution inside the walls, and causes a discontinuity of potential in the [110]p direction, which results in an alternative conductivity of the neighboring 71° domain walls, and a low conductivity of the 71° domain walls when measurement is taken from the film top surface.
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Affiliation(s)
- Yi Zhang
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Haidong Lu
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA
| | - Xingxu Yan
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Lin Xie
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Toshihiro Aoki
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Linze Li
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
| | - Colin Heikes
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14850, USA
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Longqing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Alexei Gruverman
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
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37
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Huyan H, Li L, Addiego C, Gao W, Pan X. Structures and electronic properties of domain walls in BiFeO 3 thin films. Natl Sci Rev 2019; 6:669-683. [PMID: 34691922 PMCID: PMC8291563 DOI: 10.1093/nsr/nwz101] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2019] [Revised: 07/12/2019] [Accepted: 07/14/2019] [Indexed: 11/14/2022] Open
Abstract
Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.
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Affiliation(s)
- Huaixun Huyan
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Christopher Addiego
- Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA
| | - Wenpei Gao
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA.,Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA.,Irvine Materials Research Institute, University of California, Irvine, CA 92697, USA
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38
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Tian G, Yang W, Chen D, Fan Z, Hou Z, Alexe M, Gao X. Topological domain states and magnetoelectric properties in multiferroic nanostructures. Natl Sci Rev 2019; 6:684-702. [PMID: 34691923 PMCID: PMC8291546 DOI: 10.1093/nsr/nwz100] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Revised: 07/07/2019] [Accepted: 07/12/2019] [Indexed: 11/21/2022] Open
Abstract
Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.
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Affiliation(s)
- Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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39
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Ferroelectrics with a controlled oxygen-vacancy distribution by design. Sci Rep 2019; 9:4225. [PMID: 30862877 PMCID: PMC6414602 DOI: 10.1038/s41598-019-40717-0] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2018] [Accepted: 02/22/2019] [Indexed: 11/21/2022] Open
Abstract
Controlling and manipulating defects in materials provides an extra degree of freedom not only for enhancing physical properties but also for introducing additional functionalities. In ferroelectric oxides, an accumulation of point defects at specific boundaries often deteriorates a polarization-switching capability, but on the one hand, delivers interface-driven phenomena. At present, it remains challenging to control oxygen vacancies at will to achieve a desirable defect structure. Here, we report a practical route to designing oxygen-vacancy distributions by exploiting the interaction with transition-metal dopants. Our thin-film experiments combined with ab-initio theoretical calculations for BiFeO3 demonstrate that isovalent dopants such as Mn3+ with a partly or fully electron-occupied eg state can trap oxygen vacancies, leading to a robust polarization switching. Our approach to controlling oxygen vacancy distributions by harnessing the vacancy-trapping capability of isovalent transition-metal cations will realize the full potential of switchable polarization in ferroelectric perovskite oxides.
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40
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Micro-Area Ferroelectric, Piezoelectric and Conductive Properties of Single BiFeO₃ Nanowire by Scanning Probe Microscopy. NANOMATERIALS 2019; 9:nano9020190. [PMID: 30717369 PMCID: PMC6409863 DOI: 10.3390/nano9020190] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Revised: 01/26/2019] [Accepted: 01/30/2019] [Indexed: 11/17/2022]
Abstract
Ferroelectric nanowires have attracted great attention due to their excellent physical properties. We report the domain structure, ferroelectric, piezoelectric, and conductive properties of bismuth ferrite (BFO, short for BiFeO₃) nanowires characterized by scanning probe microscopy (SPM). The X-ray diffraction (XRD) pattern presents single phase BFO without other obvious impurities. The piezoresponse force microscopy (PFM) results indicate that the nanowires possess a multidomain configuration, and the maximum piezoelectric coefficient (d33) of single BFO nanowire is 22.21 pm/V. Poling experiments and local switching spectroscopy piezoresponse force microscopy (SS-PFM) demonstrate that there is sufficient polarization switching behavior and obvious piezoelectric properties in BFO nanowires. The conducting atomic force microscopy (C-AFM) results show that the current is just hundreds of pA at 8 V. These lay the foundation for the application of BFO nanowires in nanodevices.
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41
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Liu L, Rojac T, Damjanovic D, Di Michiel M, Daniels J. Frequency-dependent decoupling of domain-wall motion and lattice strain in bismuth ferrite. Nat Commun 2018; 9:4928. [PMID: 30467315 PMCID: PMC6250669 DOI: 10.1038/s41467-018-07363-y] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2018] [Accepted: 10/11/2018] [Indexed: 11/14/2022] Open
Abstract
Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroelectrics. In situ X-ray diffraction was used to separate the electric-field-induced lattice strain and strain due to displacements of non-180° domain walls in polycrystalline BiFeO3 over a wide frequency range. These piezoelectric strain mechanisms have opposing trends as a function of frequency. The lattice strain increases with increasing frequency, showing negative piezoelectric phase angle (i.e., strain leads the electric field), an unusual feature so far demonstrated only in the total macroscopic piezoelectric response. Domain-wall motion exhibits the opposite behaviour, it decreases in magnitude with increasing frequency, showing more common positive piezoelectric phase angle (i.e., strain lags behind the electric field). Charge redistribution at conducting domain walls, oriented differently in different grain families, is demonstrated to be the cause. Conductive domain walls of ferroelectric materials are considered for device applications demanding a fundamental understanding of their dynamics. Here, frequency-dependent decoupling of strains upon electric field cycling in BiFeO3 is demonstrated to arise from conductive domain walls.
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Affiliation(s)
- Lisha Liu
- School of Materials Science and Engineering, UNSW, 2052, Sydney, Australia
| | - Tadej Rojac
- Electronic Ceramics Department, Jozef Stefan Institute, 1000, Ljubljana, Slovenia
| | - Dragan Damjanovic
- Group for Ferroelectrics and Functional Oxides, Swiss Federal Institute of Technology in Lausanne-EPFL, 1015, Lausanne, Switzerland
| | | | - John Daniels
- School of Materials Science and Engineering, UNSW, 2052, Sydney, Australia.
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42
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Ma J, Ma J, Zhang Q, Peng R, Wang J, Liu C, Wang M, Li N, Chen M, Cheng X, Gao P, Gu L, Chen LQ, Yu P, Zhang J, Nan CW. Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls. NATURE NANOTECHNOLOGY 2018; 13:947-952. [PMID: 30038370 DOI: 10.1038/s41565-018-0204-1] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2018] [Accepted: 06/18/2018] [Indexed: 05/12/2023]
Abstract
Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path coupled to the surrounding polarization. They have been proposed for use as non-volatile memory with non-destructive operation and ultralow energy consumption. Yet the evolution of domain walls during polarization switching makes it challenging to control their location and conductance precisely, a prerequisite for controlled read-write schemes and for integration in scalable memory devices. Here, we explore and reversibly switch the polarization of square BiFeO3 nanoislands in a self-assembled array. Each island confines cross-shaped, charged domain walls in a centre-type domain. Electrostatic and geometric boundary conditions induce two stable domain configurations: centre-convergent and centre-divergent. We switch the polarization deterministically back and forth between these two states, which alters the domain wall conductance by three orders of magnitude, while the position of the domain wall remains static because of its confinement within the BiFeO3 islands.
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Affiliation(s)
- Ji Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jing Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, China
| | - Renci Peng
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jing Wang
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- Department of Physics, Beijing Normal University, Beijing, China
| | - Chen Liu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Meng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Ning Li
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Mingfeng Chen
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, PA, USA
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, China
| | - Long-Qing Chen
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
- Department of Materials Science and Engineering, Penn State University, University Park, PA, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing, China.
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.
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43
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Li L, Jokisaari JR, Zhang Y, Cheng X, Yan X, Heikes C, Lin Q, Gadre C, Schlom DG, Chen LQ, Pan X. Control of Domain Structures in Multiferroic Thin Films through Defect Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802737. [PMID: 30084144 DOI: 10.1002/adma.201802737] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2018] [Revised: 07/01/2018] [Indexed: 06/08/2023]
Abstract
Domain walls (DWs) have become an essential component in nanodevices based on ferroic thin films. The domain configuration and DW stability, however, are strongly dependent on the boundary conditions of thin films, which make it difficult to create complex ordered patterns of DWs. Here, it is shown that novel domain structures, that are otherwise unfavorable under the natural boundary conditions, can be realized by utilizing engineered nanosized structural defects as building blocks for reconfiguring DW patterns. It is directly observed that an array of charged defects, which are located within a monolayer thickness, can be intentionally introduced by slightly changing substrate temperature during the growth of multiferroic BiFeO3 thin films. These defects are strongly coupled to the domain structures in the pretemperature-change portion of the BiFeO3 film and can effectively change the configuration of newly grown domains due to the interaction between the polarization and the defects. Thus, two types of domain patterns are integrated into a single film without breaking the DW periodicity. The potential use of these defects for building complex patterns of conductive DWs is also demonstrated.
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Affiliation(s)
- Linze Li
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Jacob R Jokisaari
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Yi Zhang
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
| | - Xingxu Yan
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Colin Heikes
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Qiyin Lin
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
| | - Chaitanya Gadre
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
| | - Xiaoqing Pan
- Department of Chemical Engineering and Materials Science, University of California, Irvine, CA, 92697, USA
- Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
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44
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Ariyaratne A, Bluvstein D, Myers BA, Jayich ACB. Nanoscale electrical conductivity imaging using a nitrogen-vacancy center in diamond. Nat Commun 2018; 9:2406. [PMID: 29921836 PMCID: PMC6008463 DOI: 10.1038/s41467-018-04798-1] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2017] [Accepted: 05/16/2018] [Indexed: 11/23/2022] Open
Abstract
The electrical conductivity of a material can feature subtle, non-trivial, and spatially varying signatures with critical insight into the material’s underlying physics. Here we demonstrate a conductivity imaging technique based on the atom-sized nitrogen-vacancy (NV) defect in diamond that offers local, quantitative, and non-invasive conductivity imaging with nanoscale spatial resolution. We monitor the spin relaxation rate of a single NV center in a scanning probe geometry to quantitatively image the magnetic fluctuations produced by thermal electron motion in nanopatterned metallic conductors. We achieve 40-nm scale spatial resolution of the conductivity and realize a 25-fold increase in imaging speed by implementing spin-to-charge conversion readout of a shallow NV center. NV-based conductivity imaging can probe condensed-matter systems in a new regime not accessible to existing technologies, and as a model example, we project readily achievable imaging of nanoscale phase separation in complex oxides. Nitrogen-vacancy centres in diamond are highly sensitive to their environment, making them well suited to quantum sensing applications. Here, the authors demonstrate the capabilities of a scanning nitrogen-vacancy sensor for nanoscale measurements of electrical conductivity.
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Affiliation(s)
- Amila Ariyaratne
- Department of Physics and Astronomy, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Dolev Bluvstein
- Department of Physics and Astronomy, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Bryan A Myers
- Department of Physics and Astronomy, University of California Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Ania C Bleszynski Jayich
- Department of Physics and Astronomy, University of California Santa Barbara, Santa Barbara, CA, 93106, USA.
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45
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Kalinin SV, Kim Y, Fong DD, Morozovska AN. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036502. [PMID: 29368693 DOI: 10.1088/1361-6633/aa915a] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.
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Affiliation(s)
- Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
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46
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Field enhancement of electronic conductance at ferroelectric domain walls. Nat Commun 2017; 8:1318. [PMID: 29105653 PMCID: PMC5673066 DOI: 10.1038/s41467-017-01334-5] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2017] [Accepted: 09/08/2017] [Indexed: 11/22/2022] Open
Abstract
Ferroelectric domain walls have continued to attract widespread attention due to both the novelty of the phenomena observed and the ability to reliably pattern them in nanoscale dimensions. However, the conductivity mechanisms remain in debate, particularly around nominally uncharged walls. Here, we posit a conduction mechanism relying on field-modification effect from polarization re-orientation and the structure of the reverse-domain nucleus. Through conductive atomic force microscopy measurements on an ultra-thin (001) BiFeO3 thin film, in combination with phase-field simulations, we show that the field-induced twisted domain nucleus formed at domain walls results in local-field enhancement around the region of the atomic force microscope tip. In conjunction with slight barrier lowering, these two effects are sufficient to explain the observed emission current distribution. These results suggest that different electronic properties at domain walls are not necessary to observe localized enhancement in domain wall currents. Understanding the conductivity at the nominally uncharged domain walls in ferroelectrics is still far from complete. Here the authors report an enhanced conduction at domain walls in an ultra-thin (001) BiFeO3 film resulting from the formation of a field-induced meta-stable twisted domain nucleus.
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47
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Ding X, Aktas O, Wang X, Li S, Zhao Z, Zhang L, He X, Lookman T, Saxena A, Sun J. Statistics of twinning in strained ferroelastics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:394002. [PMID: 28825916 DOI: 10.1088/1361-648x/aa7ea0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this review, we show that the evolution of the microstructure and kinetics of ferroelastic crystals under external shear can be explored by computer simulations of 2D model materials. We find that the nucleation and propagation of twin boundaries in ferroelastics depend sensitively on temperature. In the plastic regime, the evolution of the ferroelastic microstructure under strain deformation maintains a stick-and-slip mechanism in all temperature regimes, whereas the dynamic behavior changes dramatically from power-law statistics at low temperature to a Kohlrausch law at intermediate temperature, and then to a Vogel-Fulcher law at high temperature. In the yield regime, the distribution of jerk energies follows power-law statistics in all temperature regimes for a large range of strain rates. The non-spanning avalanches in the yield regime follow a parabolic temporal profile. The changes of twin pattern and twin boundaries density represent an important step towards domain boundary engineering.
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Affiliation(s)
- Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiao Tong University, Xi'an 710049, People's Republic of China
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48
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Werner CS, Herr SJ, Buse K, Sturman B, Soergel E, Razzaghi C, Breunig I. Large and accessible conductivity of charged domain walls in lithium niobate. Sci Rep 2017; 7:9862. [PMID: 28851946 PMCID: PMC5575345 DOI: 10.1038/s41598-017-09703-2] [Citation(s) in RCA: 61] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2017] [Accepted: 07/27/2017] [Indexed: 11/09/2022] Open
Abstract
Ferroelectric domain walls are interfaces between areas of a material that exhibits different directions of spontaneous polarization. The properties of domain walls can be very different from those of the undisturbed material. Metallic-like conductivity of charged domain walls (CDWs) in nominally insulating ferroelectrics was predicted in 1973 and detected recently. This important effect is still in its infancy: The electric currents are still smaller than expected, the access to the conductivity at CDWs is hampered by contact barriers, and stability is low because of sophisticated domain structures or proximity of the Curie point. Here, we report on large, accessible, and stable conductivity at CDWs in lithium niobate (LN) crystals - a vital material for photonics. Our results mark a breakthrough: Increase of conductivity at CDWs by more than 13 orders of magnitude compared to that of the bulk, access to the effect via ohmic and diode-like contacts, and high stability for temperatures T ≤ 70 °C are demonstrated. A promising and now realistic prospect is to combine CDW functionalities with linear and nonlinear optical phenomena. Our findings allow new generations of adaptive-optical elements, of electrically controlled integrated-optical chips for quantum photonics, and of advanced LN-semiconductor hybrid optoelectronic devices.
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Affiliation(s)
- Christoph S Werner
- Department of Microsystems Engineering - IMTEK, University of Freiburg, Georges-Köhler-Allee 102, 79110, Freiburg, Germany
| | - Simon J Herr
- Department of Microsystems Engineering - IMTEK, University of Freiburg, Georges-Köhler-Allee 102, 79110, Freiburg, Germany
| | - Karsten Buse
- Department of Microsystems Engineering - IMTEK, University of Freiburg, Georges-Köhler-Allee 102, 79110, Freiburg, Germany
- Fraunhofer Institute for Physical Measurement Techniques IPM, Heidenhofstraße 8, 79110, Freiburg, Germany
| | - Boris Sturman
- Institute for Automation and Electrometry of Russian Academy of Science, 630090, Novosibirsk, Russia
| | - Elisabeth Soergel
- Institute of Physics, University of Bonn, Wegelerstraße 8, 53115, Bonn, Germany
| | - Cina Razzaghi
- Institute of Physics, University of Bonn, Wegelerstraße 8, 53115, Bonn, Germany
| | - Ingo Breunig
- Department of Microsystems Engineering - IMTEK, University of Freiburg, Georges-Köhler-Allee 102, 79110, Freiburg, Germany.
- Fraunhofer Institute for Physical Measurement Techniques IPM, Heidenhofstraße 8, 79110, Freiburg, Germany.
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49
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Kurnia F, Cheung J, Cheng X, Sullaphen J, Kalinin SV, Valanoor N, Vasudevan RK. Nanoscale Probing of Elastic-Electronic Response to Vacancy Motion in NiO Nanocrystals. ACS NANO 2017; 11:8387-8394. [PMID: 28742320 DOI: 10.1021/acsnano.7b03826] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Measuring the diffusion of ions and vacancies at nanometer length scales is crucial to understanding fundamental mechanisms driving technologies as diverse as batteries, fuel cells, and memristors; yet such measurements remain extremely challenging. Here, we employ a multimodal scanning probe microscopy (SPM) technique to explore the interplay between electronic, elastic, and ionic processes via first-order reversal curve I-V measurements in conjunction with electrochemical strain microscopy (ESM). The technique is employed to investigate the diffusion of oxygen vacancies in model epitaxial nickel oxide (NiO) nanocrystals with resistive switching characteristics. Results indicate that opening of the ESM hysteresis loop is strongly correlated with changes to the resonant frequency, hinting that elastic changes stem from the motion of oxygen (or cation) vacancies in the probed volume of the SPM tip. These changes are further correlated to the current measured on each nanostructure, which shows a hysteresis loop opening at larger (∼2.5 V) voltage windows, suggesting the threshold field for vacancy migration. This study highlights the utility of local multimodal SPM in determining functional and chemical changes in nanoscale volumes in nanostructured NiO, with potential use to explore a wide variety of materials including phase-change memories and memristive devices in combination with site-correlated chemical imaging tools.
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Affiliation(s)
- Fran Kurnia
- School of Materials Science and Engineering, University of New South Wales , Sydney 2052, Australia
| | - Jeffrey Cheung
- School of Materials Science and Engineering, University of New South Wales , Sydney 2052, Australia
| | - Xuan Cheng
- School of Materials Science and Engineering, University of New South Wales , Sydney 2052, Australia
| | - Jivika Sullaphen
- School of Materials Science and Engineering, University of New South Wales , Sydney 2052, Australia
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, University of New South Wales , Sydney 2052, Australia
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
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50
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Liu Y, Zhu YL, Tang YL, Wang YJ, Li S, Zhang SR, Han MJ, Ma JY, Suriyaprakash J, Ma XL. Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO 3/BiFeO 3 Bilayers. ACS APPLIED MATERIALS & INTERFACES 2017; 9:25578-25586. [PMID: 28677952 DOI: 10.1021/acsami.7b04681] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Functional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO3/PbTiO3 (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO3 (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO3 was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution.
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Affiliation(s)
- Ying Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
| | - Shuang Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Si-Rui Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Meng-Jiao Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Jin-Yuan Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, Lanzhou University of Technology , Langongping Road 287, 730050 Lanzhou, China
| | - Jagadeesh Suriyaprakash
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- University of Chinese Academy of Sciences , Yuquan Road 19, 100049 Beijing, China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , Wenhua Road 72, 110016 Shenyang, China
- School of Materials Science and Engineering, Lanzhou University of Technology , Langongping Road 287, 730050 Lanzhou, China
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