Orthorhombic BiFeO3

Large bi-axial tensile strain effect in epitaxial BiFeO3 film grown on single crystal PrScO3

A BiFeO3 film is grown epitaxially on a PrScO3 single crystal substrate which imparts ~ 1.45% of biaxial tensile strain to BiFeO3 resulting from lattice misfit. The biaxial tensile strain effect on BiFeO3 is investigated in terms of crystal structure, Poisson ratio, and ferroelectric domain structure. Lattice resolution scanning transmission electron microscopy, precession electron diffraction, and X-ray diffraction results clearly show that in-plane interplanar distance of BiFeO3 is the same as that of PrScO3 with no sign of misfit dislocations, indicating that the biaxial tensile strain caused by lattice mismatch between BiFeO3 and PrScO3 are stored as elastic energy within BiFeO3 film. Nano-beam electron diffraction patterns compared with structure factor calculation found that the BiFeO3 maintains rhombohedral symmetry, i.e., space group of R3c. The pattern analysis also revealed two crystallographically distinguishable domains. Their relations with ferroelectric domain structures in terms of size and spontaneous polarization orientations within the domains are further understood using four-dimensional scanning transmission electron microscopy technique.

Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias

BiFeO₃, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO₃ are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO₃ remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO₃ thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO₃ thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO₃ thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO₃. By confining thin layers of BiFeO₃ in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

Materials for a Sustainable Microelectronics Future: Electric Field Control of Magnetism with Multiferroics

This article is written on behalf of many colleagues, collaborators, and researchers in the field of complex oxides as well as current and former students and postdocs who continue to enable and undertake cutting-edge research in the field of multiferroics, magnetoelectrics, and the pursuit of electric-field control of magnetism. What I present is something that is extremely exciting from both a fundamental science and applications perspective and has the potential to revolutionize our world, particularly from a sustainability perspective. To realize this potential will require numerous new innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between fundamental materials physics and the actual manifestations of the physical concepts into real-life applications. I hope this article will help spur more translational research within the broad materials community.

Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films

Bi_1−xSm_xFe_0.98Mn_0.02O₃ (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm²). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.

Oxidic 2D Materials

The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.

Layer and spontaneous polarizations in perovskite oxides and their interplay in multiferroic bismuth ferrite

We review the concept of surface charge, first, in the context of the polarization in ferroelectric materials and, second, in the context of layers of charged ions in ionic insulators. While the former is traditionally discussed in the ferroelectrics community and the latter in the surface science community, we remind the reader that the two descriptions are conveniently unified within the modern theory of polarization. In both cases, the surface charge leads to electrostatic instability-the so-called "polar catastrophe"-if it is not compensated, and we review the range of phenomena that arise as a result of different compensation mechanisms. We illustrate these concepts using the example of the prototypical multiferroic bismuth ferrite, BiFeO₃, which is unusual in that its spontaneous ferroelectric polarization and the polarization arising from its layer charges can be of the same magnitude. As a result, for certain combinations of polarization orientation and surface termination, its surface charge is self-compensating. We use density functional calculations of BiFeO₃ slabs and superlattices, analysis of high-resolution transmission electron micrographs, and examples from the literature to explore the consequences of this peculiarity.

Structure, Performance, and Application of BiFeO3 Nanomaterials

Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.

The effect of orbital-lattice coupling on the electrical resistivity of YBaCuFeO5 investigated by X-ray absorption

Temperature-dependent X-ray absorption near-edge structures, X-ray linear dichroism (XLD) and extended X-ray absorption fine structure (EXAFS) spectroscopic techniques were used to investigate the valence state, preferred orbital and local atomic structure that significantly affect the electrical and magnetic properties of a single crystal of YBaCuFeO5 (YBCFO). An onset of increase of resistivity at ~180 K, followed by a rapid increase at/below 125 K, is observed. An antiferromagnetic (AFM)-like transition is close to the temperature at which the resistivity starts to increase in the ab-plane and is also observed with strong anisotropy between the ab-plane and the c-axis. The XLD spectra at the Fe L3,2-edge revealed a change in Fe 3d eg holes from the preferential [Formula: see text] orbital at high temperature (300-150 K) to the [Formula: see text] orbital at/below 125 K. The analysis of the Fe K-edge EXAFS data of YBCFO further revealed an unusual increase in the Debye-Waller factor of the nearest-neighbor Fe-O bond length at/below 125 K, suggesting phonon-softening behavior, resulting in the breaking of lattice symmetry, particularly in the ab-plane of Fe-related square pyramids. These findings demonstrate a close correlation between electrical resistivity and coupling of the preferred Fe 3d orbital with lattice distortion of a single crystal of YBCFO.

Freestanding crystalline oxide perovskites down to the monolayer limit

Two-dimensional (2D) materials such as graphene and transition-metal dichalcogenides reveal the electronic phases that emerge when a bulk crystal is reduced to a monolayer^1-4. Transition-metal oxide perovskites host a variety of correlated electronic phases^5-12, so similar behaviour in monolayer materials based on transition-metal oxide perovskites would open the door to a rich spectrum of exotic 2D correlated phases that have not yet been explored. Here we report the fabrication of freestanding perovskite films with high crystalline quality almost down to a single unit cell. Using a recently developed method based on water-soluble Sr₃Al₂O₆ as the sacrificial buffer layer^13,14 we synthesize freestanding SrTiO₃ and BiFeO₃ ultrathin films by reactive molecular beam epitaxy and transfer them to diverse substrates, in particular crystalline silicon wafers and holey carbon films. We find that freestanding BiFeO₃ films exhibit unexpected and giant tetragonality and polarization when approaching the 2D limit. Our results demonstrate the absence of a critical thickness for stabilizing the crystalline order in the freestanding ultrathin oxide films. The ability to synthesize and transfer crystalline freestanding perovskite films without any thickness limitation onto any desired substrate creates opportunities for research into 2D correlated phases and interfacial phenomena that have not previously been technically possible.

Short range biaxial strain relief mechanism within epitaxially grown BiFeO3

Lattice mismatch-induced biaxial strain effect on the crystal structure and growth mechanism is investigated for the BiFeO₃ films grown on La_0.6Sr_0.4MnO₃/SrTiO₃ and YAlO₃ substrates. Nano-beam electron diffraction, structure factor calculation and x-ray reciprocal space mapping unambiguously confirm that the crystal structure within both of the BiFeO₃ thin films is rhombohedral by showing the rhombohedral signature Bragg’s reflections. Further investigation with atomic resolution scanning transmission electron microscopy reveals that while the ~1.0% of the lattice mismatch found in the BiFeO₃ grown on La_0.6Sr_0.4MnO₃/SrTiO₃ is exerted as biaxial in-plane compressive strain with atomistically coherent interface, the ~6.8% of the lattice mismatch found in the BiFeO₃ grown on YAlO₃ is relaxed at the interface by introducing dislocations. The present result demonstrates the importance of: (1) identification of the epitaxial relationship between BFO and its substrate material to quantitatively evaluate the amount of the lattice strain within BFO film and (2) the atomistically coherent BFO/substrate interface for the lattice mismatch to exert the lattice strain.

Controllable defect driven symmetry change and domain structure evolution in BiFeO3 with enhanced tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, the accurate control of the concentration of defects remains a big challenge. In this work, ion implantation, which can provide controllable point defects, allows us to produce a controlled defect driven true super-tetragonal (T) phase with a single-domain-state in ferroelectric BiFeO3 thin films. This point-defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry and induce the stripe multi-nanodomains to a single domain state. By further increasing the injected dose of the He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio of ∼1.3 that has ever been experimentally achieved in BiFeO3. A combination of the morphology change and domain evolution further confirms that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of the R phase and in-plane nanoscale multi-domains after heat treatment reveal the memory effect and reversible phase transition and domain evolution. Our findings demonstrate the reversible control of R-Mc-T-super T symmetry changes (leading to the creation of true T phase BiFeO3 with enhanced tetragonality) and multidomain-single domain structure evolution through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which might lead to strong polarization enhancement.

Strain effect on orbital and magnetic structures of Mn ions in epitaxial Nd0.35Sr0.65MnO3/SrTiO3 films using X-ray diffraction and absorption

This study probes the temperature-dependent strain that is strongly correlated with the orbital and magnetic structures of epitaxial films of Nd_0.35Sr_0.65MnO₃ (NSMO) that are fabricated by pulsed laser deposition with two thicknesses, 17 (NS17) and 103 nm (NS103) on SrTiO₃ (STO) substrate. This investigation is probed using X-ray diffraction (XRD) and absorption-based techniques, X-ray linear dichroism (XLD) and the X-ray magnetic circular dichroism (XMCD). XRD indicates a significant shift in the (004) peak position that is associated with larger strain in NS17 relative to that of NS103 at both 30 and 300 K. Experimental and atomic multiplet simulated temperature-dependent Mn L_3,2-edge XLD results reveal that the stronger strain in a thinner NS17 film causes less splitting of Mn 3d e_g state at low temperature, indicating an enhancement of orbital fluctuations in the band above the Fermi level. This greater Mn 3d orbital fluctuation can be the cause of both the enhanced ferromagnetism (FM) as a result of spin moments and the reduced Néel temperature of C-type antiferromagnetism (AFM) in NS17, leading to the FM coupling of the canted-antiferromagnetism (FM-cAFM) state in NSMO/STO epitaxial films at low temperature (T = 30 K). These findings are also confirmed by Mn L_3,2-edge XMCD measurements.

Advances in magnetoelectric multiferroics

The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic materials has driven significant research activity, with the goal of realizing their transformative technological potential. Here, we review progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and the exploration of devices and applications. Focusing on the translation of the many scientific breakthroughs into technological innovations, we identify the key open questions in the field where targeted research activities could have maximum impact in transitioning scientific discoveries into real applications.

Nonmonotonic particle-size-dependence of magnetoelectric coupling in strained nanosized particles of BiFeO3

Using high resolution powder x-ray and neutron diffraction experiments, we determined the off-centered displacement of the ions within a unit cell and magnetoelectric coupling in nanoscale BiFeO₃ (≈20–200 nm). We found that both the off-centered displacement of the ions and magnetoelectric coupling exhibit nonmonotonic variation with particle size. They increase as the particle size reduces from bulk and reach maximum around 30 nm. With further decrease in particle size, they decrease precipitously. The magnetoelectric coupling is determined by the anomaly in off-centering of ions around the magnetic transition temperature (T_N). The ions, in fact, exhibit large anomalous displacement around the T_N which is analyzed using group theoretical approach. It underlies the nonmonotonic particle-size-dependence of off-centre displacement of ions and magnetoelectric coupling. The nonmonotonic variation of magnetoelectric coupling with particle size is further verified by direct electrical measurement of remanent ferroelectric hysteresis loops at room temperature under zero and ∼20 kOe magnetic field. Competition between enhanced lattice strain and compressive pressure appears to be causing the nonmonotonic particle-size-dependence of off-centre displacement while coupling between piezo and magnetostriction leads to nonmonotonicity in the variation of magnetoelectric coupling.

Tensile stress effect on epitaxial BiFeO3 thin film grown on KTaO3

Comprehensive crystal structural study is performed for BiFeO₃ (BFO) film grown on KTaO₃ (KTO) substrate using transmission electron microscopy (TEM) and x-ray diffraction (XRD). Nano-beam electron diffraction (NBED) combined with structure factor calculation and high resolution TEM images clearly reveal that the crystal structure within BFO thin film is rhombohedral BFO, i.e., bulk BFO phase. Epitaxial relationship found by NBED indicates the BFO film grows in a manner that minimizes lattice mismatch with KTO. It further suggests BFO film is under slight biaxial tensile stress (~0.35%) along in-plane direction. XRD reveals BFO lattice is under compressive stress (~1.6%), along out-of-plane direction as a result of the biaxial tensile strain applied along in-plane direction. This leads to Poisson’s ratio of ~0.68. In addition, we demonstrate (1) why hexagonal notation rather than pseudocubic one is required for accurate BFO phase evaluation and (2) a new XRD method that shows how rhombohedral BFO can readily be identified among other phases by measuring a rhombohedral specific Bragg’s reflection.

A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si

A strain-driven orthorhombic (O) to rhombohedral (R) phase transition is reported in La-doped BiFeO₃ thin films on silicon substrates. Biaxial compressive epitaxial strain is found to stabilize the rhombohedral phase at La concentrations beyond the morphotropic phase boundary (MPB). By tailoring the residual strain with film thickness, we demonstrate a mixed O/R phase structure consisting of O phase domains measuring tens of nanometers wide within a predominant R phase matrix. A combination of piezoresponse force microscopy (PFM), transmission electron microscopy (TEM), polarization-electric field hysteresis loop (P-E loop), and polarization maps reveal that the O-R structural change is an antiferroelectric to ferroelectric (AFE-FE) phase transition. Using scanning transmission electron microscopy (STEM), an atomically sharp O/R MPB is observed. Moreover, X-ray absorption spectra (XAS) and X-ray linear dichroism (XLD) measurements reveal a change in the antiferromagnetic axis orientation from out of plane (R-phase) to in plane (O-phase). These findings provide direct evidence of spin-charge-lattice coupling in La-doped BiFeO₃ thin films. Furthermore, this study opens a new pathway to drive the AFE-FE O-R phase transition and provides a route to study the O/R MPB in these films.

Sm/Ti co-substituted bismuth ferrite multiferroics: reciprocity between tetragonality and piezoelectricity

BiFeO₃ (BFO) systems co-modified with Ti, Sm and Sm–Ti have been investigated for piezoelectricity together with dielectric and multiferroic properties.

Single-domain multiferroic BiFeO3 films

The strong coupling between antiferromagnetism and ferroelectricity at room temperature found in BiFeO₃ generates high expectations for the design and development of technological devices with novel functionalities. However, the multi-domain nature of the material tends to nullify the properties of interest and complicates the thorough understanding of the mechanisms that are responsible for those properties. Here we report the realization of a BiFeO₃ material in thin film form with single-domain behaviour in both its magnetism and ferroelectricity: the entire film shows its antiferromagnetic axis aligned along the crystallographic b axis and its ferroelectric polarization along the c axis. With this we are able to reveal that the canted ferromagnetic moment due to the Dzyaloshinskii–Moriya interaction is parallel to the a axis. Furthermore, by fabricating a Co/BiFeO₃ heterostructure, we demonstrate that the ferromagnetic moment of the Co film does couple directly to the canted moment of BiFeO₃.

The coupling of ferroelectric and antiferromagnetic order in BiFeO₃ makes it appealing for applications however the presence of domain structure acts to undermine this potential. Here, the authors demonstrate BiFeO₃ thin films with a single domain of electrical polarization and canted antiferromagnetic order.

Ferroelastic switching in a layered-perovskite thin film

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi₂WO₆ thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi₂WO₆ film is ten times lower than the one in PbTiO₃ films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

Ferroelastic switching in thin films is typically restricted by constraints from the substrate or occurs around twin-like domains. Here, the authors show reversible and non-volatile ferroelastic switching avoiding substrate constraints in layered-perovskite Bi_2WO_6 epitaxial films.

Revealing the flexoelectricity in the mixed-phase regions of epitaxial BiFeO3 thin films

Understanding the elastic response on the nanoscale phase boundaries of multiferroics is an essential issue in order to explain their exotic behaviour. Mixed-phase BiFeO₃ films, epitaxially grown on LaAlO₃ (001) substrates, have been investigated by means of scanning probe microscopy to characterize the elastic and piezoelectric responses in the mixed-phase region of rhombohedral-like monoclinic (M_I) and tilted tetragonal-like monoclinic (M_II,tilt) phases. Ultrasonic force microscopy reveal that the regions with low/high stiffness values topologically coincide with the M_I/M_II,tilt phases. X-ray diffraction strain analysis confirms that the M_I phase is more compliant than the M_II,tilt one. Significantly, the correlation between elastic modulation and piezoresponse across the mixed-phase regions manifests that the flexoelectric effect results in the enhancement of the piezoresponse at the phase boundaries and in the M_I regions. This accounts for the giant electromechanical effect in strained mixed-phase BiFeO₃ films.

BiFeO3 epitaxial thin films and devices: past, present and future

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

k=0 magnetic structure and absence of ferroelectricity in SmFeO3

SmFeO3 has attracted considerable attention very recently due to its reported multiferroic properties above room temperature. We have performed powder and single crystal neutron diffraction as well as complementary polarization dependent soft X-ray absorption spectroscopy measurements on floating-zone grown SmFeO3 single crystals in order to determine its magnetic structure. We found a k=0 G-type collinear antiferromagnetic structure that is not compatible with inverse Dzyaloshinskii-Moriya interaction driven ferroelectricity. While the structural data reveal a clear sign for magneto-elastic coupling at the Néel-temperature of ∼675  K, the dielectric measurements remain silent as far as ferroelectricity is concerned.

Conduction control at ferroic domain walls via external stimuli

Intriguing functionalities at nano-sized domain walls have recently spawned a new paradigm for developing novel nanoelectronics due to versatile characteristics. In this study, we explore a new scenario to modulate the local conduction of ferroic domain walls. Three controlling parameters, i.e., external electrical field, magnetic field and light, are introduced to the 90° domain walls (90° DWs) of BiFeO₃. Electrical modulation is realized by electrical transport, where the mobility of 90° DWs can be altered by gating voltage. We further use the ferromagnetic/antiferromagnetic coupling to reveal the inherent magnetism at the DWs. With an established magnetic nature, magnetotransport has been conducted to introduce magnetic controlling parameter, where a giant positive magnetoresistance change can be observed up to 200%. In addition, light modulated conduction, a core factor for multifunctional applications, is successfully demonstrated (current enhancement by a factor of 2 with 11 W white lamp). These results offer new insights to discover the tunability of domain wall nanoelectronics.

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO₃ Ultrathin Films

In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO₃ ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO₃ ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO₃ ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO₃ ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO₃ ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO₃ ultrathin films.

Tuning phase stability of complex oxide nanocrystals via conjugation

Nanocrystals (NCs) attract tremendous research interests because of their unique properties to meet the demands of functionalities. To date, hybrid NCs with multiple components are developed to meet the rising demands that could be very difficult, or even impossible to be achieved by single-component NCs. Tuning properties by strain via conjugation could be an alternative solution. Strain engineering has been discovered and widely applied to many thin-film materials for tuning physical properties. Then, there is a further question to be addressed in this study: can we take the advantages we have learned in heteroepitaxy of thin films and transfer that into the NC conjugation? In order to demonstrate this possibility, we investigated NC conjugation of BiFeO3 and LaAlO3. We found that change in either LaAlO3-NC or BiFeO3-NC size would change the stability of rhombohedral-to-tetragonal phase transition. The present results show that strain engineering is possible to be realized in not only thin film but also NC conjugation. The same concept should be applicable to other complex oxide systems in order to broaden their practical applications for the rising demands of multifunctionalities.

Orientation-tuning in self-assembled heterostructures induced by a buffer layer

Anisotropic nano-plate structures in self-assembled perovskite-spinel thin films, BiFeO3-NiFe2O4 and BiFeO3-CoFe2O4, which were deposited on (001)c SrRuO3/SrTiO3 and DyScO3 substrates, respectively, have been demonstrated using transmission electron microscopy combined with strain analysis. Unlike the unitary cube-on-cube orientation relationship reported widely, the growth direction of the CoFe2O4 and NiFe2O4 plates was tuned to [011]c while the BiFeO3 matrix kept [001]c in both systems. In particular, a thin stress-sensitive BiFeO3 buffer layer between the spinel nanostructure and the substrate was introduced for providing a complex strain state in both film systems. The novel orientation tuning and the pattern configuration of the heterostructures are mainly attributed to the strain imposed on the films and the anisotropic ledge growth mechanism of spinels.