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Xu Z, Zhu Y, Wang Y, Li X, Liu Q, Chen K, Wang J, Jiang Y, Chen L. Tailoring Dzyaloshinskii-Moriya Interaction and Spin-Hall Topological Hall Effect in Insulating Magnetic Oxides by Interface Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403852. [PMID: 38984469 PMCID: PMC11425861 DOI: 10.1002/advs.202403852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 06/10/2024] [Indexed: 07/11/2024]
Abstract
Chiral spin textures, as exotic phases in magnetic materials, hold immense promise for revolutionizing logic, and memory applications. Recently, chiral spin textures have been observed in centrosymmetric magnetic insulators (FMI), due to an interfacial Dzyaloshinskii-Moriya interaction (iDMI). However, the source and origin of this iDMI remain enigmatic in magnetic insulator systems. Here, the source and origin of the iDMI in Pt/Y3Fe5O12 (YIG)/substrate structures are deeply delved by examining the spin-Hall topological Hall effect (SH-THE), an indication of chiral spin textures formed due to an iDMI. Through carefully modifying the interfacial chemical composition of Pt/YIG/substrate with a nonmagnetic Al3+ doping, the obvious dependence of SH-THE on the interfacial chemical composition for both the heavy metal (HM)/FMI and FMI/substrate interfaces is observed. The results reveal that both interfaces contribute to the strength of the iDMI, and the iDMI arises due to strong spin-orbit coupling and inversion symmetry breaking at both interfaces in HM/FMI/substrate. Importantly, it is shown that nonmagnetic substitution and interface engineering can significantly tune the SH-THE and iDMI in ferrimagnetic iron garnets. The approach offers a viable route to tailor the iDMI and associated chiral spin textures in low-damping insulating magnetic oxides, thus advancing the field of spintronics.
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Affiliation(s)
- Zedong Xu
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, China
| | - Yuanmin Zhu
- School of Materials Science and Engineering, Dongguan University of Technology, Dongguan, 523808, China
| | - Yuming Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xiaowen Li
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qi Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yong Jiang
- Institute of Quantum Materials and Devices, School of Electronics and Information Engineering, Tiangong University, Tianjin, 300387, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
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2
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Seki T, Uchida K, Takanashi K. Spin caloritronics in metallic superlattices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:333001. [PMID: 38701832 DOI: 10.1088/1361-648x/ad4761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2024] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
Spin caloritronics, a research field studying on the interconversion between a charge current (Jc) and a heat current (Jq) mediated by a spin current (Js) and/or magnetization (M), has attracted much attention not only for academic interest but also for practical applications. Newly discovered spin-caloritronic phenomena such as the spin Seebeck effect (SSE) have stimulated the renewed interest in the thermoelectric phenomena of a magnet, which have been known for a long time, e.g. the anomalous Nernst effect (ANE). These spin-caloritronic phenomena involving the SSE and the ANE have provided with a new direction for thermoelectric conversion exploitingJsand/orM. Importantly, the symmetry of ANE allows the thermoelectric conversion in the transverse configuration betweenJqandJc. Although the transverse configuration is totally different from the conventional longitudinal configuration based on the Seebeck effect and has many advantages, we are still facing several issues that need to be solved before developing practical applications. The primal issue is the improvement of conversion efficiency. In the case of ANE-based applications, a material with a large anomalous Nernst coefficient (SANE) is the key for solving the issue. This review article introduces the increase ofSANEcan be achieved by forming superlattice structures, which has been demonstrated for several kinds of materials combinations. The overall picture of studies on spin caloritronics is first surveyed. Then, we mention the pioneering work on the transverse thermoelectric conversion in superlattice structures, which was performed using Fe-based metallic superlattices, and show the recent studies for the Ni-based metallic superlattices and the ordered alloy-based metallic superlattices.
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Affiliation(s)
- T Seki
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- National Institute for Materials Science, Tsukuba 305-0047, Japan
- Center for Science and Innovation in Spintronics (CSIS), Core Research Cluster, Tohoku University, Sendai 980-8577, Japan
| | - K Uchida
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- National Institute for Materials Science, Tsukuba 305-0047, Japan
| | - K Takanashi
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
- Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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3
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Kee JY, Kim KT, Lee IH, Seo I, Chang JY, Lee AY, Noh WS, Chang YJ, Park SY, Choe SB, Kim DH, Kim KW, Choi Y, Lee DR, Choi JW. Additive roles of antiferromagnetically coupled elements in the magnetic proximity effect in the GdFeCo/Pt system. Sci Rep 2024; 14:9476. [PMID: 38658634 PMCID: PMC11043343 DOI: 10.1038/s41598-024-60076-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Accepted: 04/18/2024] [Indexed: 04/26/2024] Open
Abstract
Interfacial magnetic interactions between different elements are the origin of various spin-transport phenomena in multi-elemental magnetic systems. We investigate the coupling between the magnetic moments of the rare-earth, transition-metal, and heavy-metal elements across the interface in a GdFeCo/Pt thin film, an archetype system to investigate ferrimagnetic spintronics. The Pt magnetic moments induced by the antiferromagnetically aligned FeCo and Gd moments are measured using element-resolved x-ray measurements. It is revealed that the proximity-induced Pt magnetic moments are always aligned parallel to the FeCo magnetic moments, even below the ferrimagnetic compensation temperature where FeCo has a smaller moment than Gd. This is understood by a theoretical model showing distinct effects of the rare-earth Gd 4f and transition-metal FeCo 3d magnetic moments on the Pt electronic states. In particular, the Gd and FeCo work in-phase to align the Pt moment in the same direction, despite their antiferromagnetic configuration. The unexpected additive roles of the two antiferromagnetically coupled elements exemplify the importance of detailed interactions among the constituent elements in understanding magnetic and spintronic properties of thin film systems.
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Affiliation(s)
- Jung Yun Kee
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
- Department of Physics, Soongsil University, Seoul, 06978, Korea
| | - Kook Tae Kim
- Department of Physics, Soongsil University, Seoul, 06978, Korea
| | - In Hak Lee
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Ilwan Seo
- Department of Physics, Soongsil University, Seoul, 06978, Korea
| | - Jun-Young Chang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Ah-Yeon Lee
- Center for Research Equipment, Division of Scientific Instrumentation & Management, Korea Basic Science Institute (KBSI), Daejeon, 34133, Korea
| | - Woo-Suk Noh
- Korea Foundation for Max Planck POSTECH/Korea Research Initiative, Pohang, 37673, Korea
| | - Young Jun Chang
- Department of Physics, University of Seoul, Seoul, 02504, Korea
| | - Seung-Young Park
- Center for Scientific Instrumentation, Division of Scientific Instrumentation & Management, Korea Basic Science Institute (KBSI), Daejeon, 34133, Korea
| | - Sug-Bong Choe
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Duck-Ho Kim
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea
| | - Kyoung-Whan Kim
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea.
- Department of Physics, Yonsei University, Seoul, 03722, Korea.
| | - Yongseong Choi
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA.
| | - Dong Ryeol Lee
- Department of Physics, Soongsil University, Seoul, 06978, Korea.
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea.
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Xu S, Dai B, Cheng H, Tai L, Lang L, Sun Y, Shi Z, Wang KL, Zhao W. Electric-Field Control of Spin Diffusion Length and Electric-Assisted D'yakonov-Perel' Mechanism in Ultrathin Heavy Metal and Ferromagnetic Insulator Heterostructure. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6368. [PMID: 36143680 PMCID: PMC9501297 DOI: 10.3390/ma15186368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Revised: 09/07/2022] [Accepted: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Electric-field control of spin dynamics is significant for spintronic device applications. Thus far, effectively electric-field control of magnetic order, magnetic damping factor and spin-orbit torque (SOT) has been studied in magnetic materials, but the electric field control of spin relaxation still remains unexplored. Here, we use ionic liquid gating to control spin-related property in the ultra-thin (4 nm) heavy metal (HM) platinum (Pt) and ferromagnetic insulator (FMI) yttrium iron garnet (Y3Fe5O12, YIG) heterostructure. It is found that the anomalous Hall effect (AHE), spin relaxation time and spin diffusion length can be effectively controlled by the electric field. The anomalous Hall resistance is almost twice as large as at 0 voltage after applying a small voltage of 5.5 V. The spin relaxation time can vary by more than 50 percent with the electric field, from 41.6 to 64.5 fs. In addition, spin relaxation time at different gate voltage follows the reciprocal law of the electron momentum scattering time, which indicates that the D'yakonov-Perel' mechanism is dominant in the Pt/YIG system. Furthermore, the spin diffusion length can be effectively controlled by an ionic gate, which can be well explained by voltage-modulated interfacial spin scattering. These results help us to improve the interface spin transport properties in magnetic materials, with great contributions to the exploration of new physical mechanisms and spintronics device.
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Affiliation(s)
- Shijie Xu
- Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
- Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
| | - Houyi Cheng
- Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China
| | - Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
| | - Lili Lang
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Yadong Sun
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Zhong Shi
- Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Kang L. Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA 90095, USA
| | - Weisheng Zhao
- Fert Beijing Institute, Ministry of Industry and Information Technology Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Hefei Innovation Research Institute, Anhui High Reliability Chips Engineering Laboratory, Beihang University, Hefei 230013, China
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5
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Li Y, Zheng D, Fang B, Liu C, Zhang C, Chen A, Ma Y, Shen K, Liu H, Manchon A, Zhang X. Unconventional Spin Pumping and Magnetic Damping in an Insulating Compensated Ferrimagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200019. [PMID: 35365890 DOI: 10.1002/adma.202200019] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 02/09/2022] [Indexed: 06/14/2023]
Abstract
Recently, the interest in spin pumping (SP) has escalated from ferromagnets into antiferromagnetic systems, potentially enabling fundamental physics and magnonic applications. Compensated ferrimagnets are considered alternative platforms for bridging ferro- and antiferromagnets, but their SP and the associated magnetic damping have been largely overlooked so far despite their seminal importance for magnonics. Herein, an unconventional SP together with magnetic damping in an insulating compensated ferrimagnet Gd3 Fe5 O12 (GdIG) is reported. Remarkably, the divergence of the nonlocal effective magnetic damping induced by SP close to the compensation temperature in GdIG/Cu/Pt heterostructures is identified unambiguously. Furthermore, the coherent and incoherent spin currents, generated by SP and the spin Seebeck effect, respectively, undergo a distinct direction change with the variation of temperature. The physical mechanisms underlying these observations are self-consistently clarified by the ferrimagnetic counterpart of SP and the handedness-related spin-wave spectra. The findings broaden the conventional paradigm of the ferromagnetic SP model and open new opportunities for exploring the ferrimagnetic magnonic devices.
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Affiliation(s)
- Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Fang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Ka Shen
- The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Haoliang Liu
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Aurélien Manchon
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- Aix-Marseille Université, CNRS, CINaM, Marseille, 13288, France
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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6
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Holanda J, Santos OA, Mendes JBS, Rezende SM. Spin-to-charge conversion and interface-induced spin Hall magnetoresistance in yttrium iron garnet/metallic bilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:435803. [PMID: 34293724 DOI: 10.1088/1361-648x/ac16f7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2021] [Accepted: 07/22/2021] [Indexed: 06/13/2023]
Abstract
We report the investigation of spin-to-charge current interconversion process in hybrid structures of yttrium iron garnet (YIG)/metallic bilayers by means of two different experimental techniques: spin pumping effect (SPE) and spin Hall magnetoresistance (SMR). We demonstrate the evidence of a correlation between spin-to-charge conversion and SMR in bilayers of YIG/Pd, YIG/Pt, and YIG/IrMn. The correlation was verified directly in the spin Hall angles and the amplitudes of the voltage signals measured by the SPE and SMR techniques. The detection of SMR was carried out using the modulated magnetoresistance technique and lock-in amplifier detection. For these measurements, we present a simple model for the interpretation of the results. The results allow us to conclude that indeed the interface in the YIG/metallic bilayers has a dominant role in the spin-to-charge current conversion and SMR.
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Affiliation(s)
- J Holanda
- Departamento de Física, Universidade Federal do Espírito Santo, 29075-910, Vitória, ES, Brazil
| | - O Alves Santos
- Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, AG 9747, The Netherlands
| | - J B S Mendes
- Departamento de Física, Universidade Federal de Viçosa, 36570-900 Viçosa, MG, Brazil
| | - S M Rezende
- Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife, PE, Brazil
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7
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Datt G, Kotnana G, Maddu R, Vallin Ö, Joshi DC, Peddis D, Barucca G, Kamalakar MV, Sarkar T. Combined Bottom-Up and Top-Down Approach for Highly Ordered One-Dimensional Composite Nanostructures for Spin Insulatronics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37500-37509. [PMID: 34325507 PMCID: PMC8397244 DOI: 10.1021/acsami.1c09582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 07/19/2021] [Indexed: 06/13/2023]
Abstract
Engineering magnetic proximity effects-based devices requires developing efficient magnetic insulators. In particular, insulators, where magnetic phases show dramatic changes in texture on the nanometric level, could allow us to tune the proximity-induced exchange splitting at such distances. In this paper, we report the fabrication and characterization of highly ordered two-dimensional arrays of LaFeO3 (LFO)-CoFe2O4 (CFO) biphasic magnetic nanowires, grown on silicon substrates using a unique combination of bottom-up and top-down synthesis approaches. The regularity of the patterns was confirmed using atomic force microscopy and scanning electron microscopy techniques, whereas magnetic force microscopy images established the magnetic homogeneity of the patterned nanowires and absence of any magnetic debris between the wires. Transmission electron microscopy shows a close spatial correlation between the LFO and CFO phases, indicating strong grain-to-grain interfacial coupling, intrinsically different from the usual core-shell structures. Magnetic hysteresis loops reveal the ferrimagnetic nature of the composites up to room temperature and the presence of a strong magnetic coupling between the two phases, and electrical transport measurements demonstrate the strong insulating behavior of the LFO-CFO composite, which is found to be governed by Mott-variable range hopping conduction mechanisms. A shift in the Raman modes in the composite sample compared to those of pure CFO suggests the existence of strain-mediated elastic coupling between the two phases in the composite sample. Our work offers ordered composite nanowires with strong interfacial coupling between the two phases that can be directly integrated for developing multiphase spin insulatronic devices and emergent magnetic interfaces.
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Affiliation(s)
- Gopal Datt
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Ganesh Kotnana
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Ramu Maddu
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Örjan Vallin
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Deep Chandra Joshi
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
| | - Davide Peddis
- Dipartimento
di Chimica e Chimica Industriale, Università
di Genova, Via Dodecaneso
31, Genova I-16146, Italy
- Institute
of Structure of Matter, Italian National
Research Council (CNR), Monterotondo
Scalo, 00015 Rome, Italy
| | - Gianni Barucca
- Department
SIMAU, Università Politecnica delle
Marche, Via Brecce Bianche
12, Ancona 60131, Italy
| | - M. Venkata Kamalakar
- Department
of Physics and Astronomy, Uppsala University, Uppsala SE-751 20, Sweden
| | - Tapati Sarkar
- Department
of Materials Science and Engineering, Uppsala
University, Box 35, Uppsala SE-751
03, Sweden
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Abstract
Advances in physical vapor deposition techniques have led to a myriad of quantum materials and technological breakthroughs, affecting all areas of nanoscience and nanotechnology which rely on the innovation in synthesis. Despite this, one area that remains challenging is the synthesis of atomically precise complex metal oxide thin films and heterostructures containing "stubborn" elements that are not only nontrivial to evaporate/sublimate but also hard to oxidize. Here, we report a simple yet atomically controlled synthesis approach that bridges this gap. Using platinum and ruthenium as examples, we show that both the low vapor pressure and the difficulty in oxidizing a "stubborn" element can be addressed by using a solid metal-organic compound with significantly higher vapor pressure and with the added benefits of being in a preoxidized state along with excellent thermal and air stability. We demonstrate the synthesis of high-quality single crystalline, epitaxial Pt, and RuO2 films, resulting in a record high residual resistivity ratio (=27) in Pt films and low residual resistivity, ∼6 μΩ·cm, in RuO2 films. We further demonstrate, using SrRuO3 as an example, the viability of this approach for more complex materials with the same ease and control that has been largely responsible for the success of the molecular beam epitaxy of III-V semiconductors. Our approach is a major step forward in the synthesis science of "stubborn" materials, which have been of significant interest to the materials science and the condensed matter physics community.
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9
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Won YC, Lim SH. Interfacial properties of [Pt/Co/Pt] trilayers probed through magnetometry. Sci Rep 2021; 11:10779. [PMID: 34031523 PMCID: PMC8144629 DOI: 10.1038/s41598-021-90239-x] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 05/10/2021] [Indexed: 11/16/2022] Open
Abstract
The magnetic and interface properties of [Pt/Co/Pt] were investigated. First, the magnetic properties were determined from the magnetic dead layer plots, in which the Co layer was considered as two distinct parts representing different magnetic properties. The two parts with low and high tCo ranges are close to and away from the top interface (Co/Pt), respectively. The part close to the top interface shows a smaller magnetization (M) value and nonlinear behavior. However, the other part shows a higher M value closer to the bulk value and a linear behavior. The nonlinear behavior of the M values of the low tCo range was converted to an impurity level using simple assumptions. The results showed the effect of the top Pt layer on the magnetic properties of the Co layer. The results clearly demonstrate that magnetometry could be utilized as a means to understand the interface quality of magnetic multilayer systems.
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Affiliation(s)
- Young Chan Won
- Department of Nano Semiconductor Engineering, Korea University, Seoul, 02841, South Korea
| | - Sang Ho Lim
- Department of Nano Semiconductor Engineering, Korea University, Seoul, 02841, South Korea. .,Department of Materials Science and Engineering, Korea University, Seoul, 02841, South Korea.
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10
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Wu DD, Fu HH. Spin-Seebeck effect and thermal colossal magnetoresistance in the narrowest zigzag graphene nanoribbons. NANOTECHNOLOGY 2021; 32:245703. [PMID: 33755594 DOI: 10.1088/1361-6528/abeb39] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Device miniaturization and low-energy dissipation are two urgent requirements in future spintronics devices. The narrowest zigzag graphene nanoribbons (ZGNRs), which are composed of just two coupled carbon-atom chains connected with carbon tetragons, are promising candidates that meet both of the above requirements well. Using the first-principles calculations combined with non-equilibrium Green's function approach, thermal spin-dependent transport through this kind of narrow ZGNR is investigated, and several exotic thermal spin-resolved transport properties are uncovered: (i) when an external magnetic field is applied, the ZGNRs are transited from the intrinsic semiconducting to the metallic state, and the thermal colossal magnetoresistance effect occurs with order of magnitudes up to 104 at room temperature; (ii) the thermal spin-dependent currents display a thermal negative differential resistance effect, and a well-defined spin-Seebeck effect (SSE) together with a pure thermal spin current occurs; and (iii) under suitable device temperature settings, a nearly perfect spin-filtering effect occurs in these narrowest ZGNRs. The theoretical results not only uncover the narrowest nanoribbon structures to realize the SSE and other inspiring thermal spin transport features, but also push carbon-based material candidates towards thermoelectric conversion device applications.
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Affiliation(s)
- Dan-Dan Wu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, People's Republic of China
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11
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Yadav R, Shepit M, Li X, Lin KW, van Lierop J, Ruotolo A. Photo-spin-voltaic effect in PtMn/Y 3Fe 5O 12 thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:095802. [PMID: 33126226 DOI: 10.1088/1361-648x/abc65a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The photo-spin-voltaic effect is revealed by the presence of a spin voltage generated by photons when a non-magnetic metal (e.g., Pt) is in close proximity to a ferrimagnetic insulator (e.g., Y3Fe5O12 (YIG)). This is attributed to the excited electrons and holes diffusing from the proximized layer near the interface to the metallic surface. By using a dual-ion-beam sputtering deposition technique, a metallic PtMn layer was deposited on YIG /Gd3Ga5O12 (GGG) (111) substrates. We report on the photo-induced-spin voltaic effect in a PtMn/YIG/GGG heterostructure. The sign of the photo-generated voltage was found to switch with magnetic field polarity and its intensity to decrease with increasing PtMn thickness. This indicates that spin-polarized electrons are confined near the interface in the metal. Photo-excitation of these carriers, together with spin-orbit coupling with Pt atoms, is at the origin of the measured transverse voltage. The design may find applications in antiferromagnetic spintronics.
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Affiliation(s)
- Roshni Yadav
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan
| | - Michael Shepit
- Department of Physics and Astronomy, University of Manitoba, Winnipeg R3T2N2, Canada
| | - Xu Li
- Department of Physics, Xiamen University, Xiamen 361005, People's Republic of China
| | - Ko-Wei Lin
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan
| | - Johan van Lierop
- Department of Physics and Astronomy, University of Manitoba, Winnipeg R3T2N2, Canada
| | - Antonio Ruotolo
- Department of Natural Sciences, Florida Polytechnic University, Lakeland, Florida 33805, United States of America
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12
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Alotibi S, Hickey BJ, Teobaldi G, Ali M, Barker J, Poli E, O'Regan DD, Ramasse Q, Burnell G, Patchett J, Ciccarelli C, Alyami M, Moorsom T, Cespedes O. Enhanced Spin-Orbit Coupling in Heavy Metals via Molecular Coupling. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5228-5234. [PMID: 33470108 DOI: 10.1021/acsami.0c19403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
5d metals are used in electronics because of their high spin-orbit coupling (SOC) leading to efficient spin-electric conversion. When C60 is grown on a metal, the electronic structure is altered due to hybridization and charge transfer. In this work, we measure the spin Hall magnetoresistance for Pt/C60 and Ta/C60, finding that they are up to a factor of 6 higher than those for pristine metals, indicating a 20-60% increase in the spin Hall angle. At low fields of 1-30 mT, the presence of C60 increased the anisotropic magnetoresistance by up to 700%. Our measurements are supported by noncollinear density functional theory calculations, which predict a significant SOC enhancement by C60 that penetrates through the Pt layer, concomitant with trends in the magnetic moment of transport electrons acquired via SOC and symmetry breaking. The charge transfer and hybridization between the metal and C60 can be controlled by gating, so our results indicate the possibility of dynamically modifying the SOC of thin metals using molecular layers. This could be exploited in spin-transfer torque memories and pure spin current circuits.
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Affiliation(s)
- Satam Alotibi
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Bryan J Hickey
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Gilberto Teobaldi
- Scientific Computing Department, Science and Technology Facilities Council, Didcot OX11 0QX, U.K
- Beijing Computational Science Research Center, Beijing 100193, China
- Stephenson Institute for Renewable Energy, Department of Chemistry, University of Liverpool, Liverpool L69 3BX, U.K
- School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ, U.K
| | - Mannan Ali
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Joseph Barker
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Emiliano Poli
- Scientific Computing Department, Science and Technology Facilities Council, Didcot OX11 0QX, U.K
| | - David D O'Regan
- School of Physics, Trinity College Dublin, The University of Dublin, Dublin 2, Ireland
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and the SFI Advanced Materials and Bio-Engineering Research Centre (AMBER), Dublin 2, Ireland
| | - Quentin Ramasse
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
- SuperSTEM, SciTech Daresbury Science and Innovation Campus, Keckwick Lane, Daresbury WA4 4AD, U.K
| | - Gavin Burnell
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - James Patchett
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K
| | - Chiara Ciccarelli
- SuperSTEM, SciTech Daresbury Science and Innovation Campus, Keckwick Lane, Daresbury WA4 4AD, U.K
| | - Mohammed Alyami
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Timothy Moorsom
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
| | - Oscar Cespedes
- School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, U.K
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13
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De A, Ghosh A, Mandal R, Ogale S, Nair S. Temperature Dependence of the Spin Seebeck Effect in a Mixed Valent Manganite. PHYSICAL REVIEW LETTERS 2020; 124:017203. [PMID: 31976695 DOI: 10.1103/physrevlett.124.017203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2019] [Revised: 11/12/2019] [Indexed: 06/10/2023]
Abstract
We report on temperature dependent measurements of the longitudinal spin Seebeck effect (LSSE) in the mixed valent manganite La_{0.7}Ca_{0.3}MnO_{3}. By disentangling the contribution arising due to the anisotropic Nernst effect, we observe that in the low temperature regime, the LSSE exhibits a T^{0.5} dependence, which matches well with that predicted by the magnon-driven spin current model. Across the double exchange driven paramagnetic-ferromagnetic transition, the LSSE exponent is significantly higher than the magnetization one, and also depends on the thickness of the spin-to-charge conversion layer. These observations highlight the importance of individually ascertaining the temperature evolution of different mechanisms-especially the spin mixing conductance-which contribute to the measured spin Seebeck signal.
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Affiliation(s)
- Avirup De
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
| | - Arup Ghosh
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
| | - Rajesh Mandal
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
| | - Satishchandra Ogale
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
- Centre for Energy Science, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
| | - Sunil Nair
- Department of Physics, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
- Centre for Energy Science, Indian Institute of Science Education and Research, Dr. Homi Bhabha Road, Pune, Maharashtra-411008, India
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14
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Jin L, Jia K, Zhang D, Liu B, Meng H, Tang X, Zhong Z, Zhang H. Effect of Interfacial Roughness Spin Scattering on the Spin Current Transport in YIG/NiO/Pt Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2019; 11:35458-35467. [PMID: 31483597 DOI: 10.1021/acsami.9b12125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfacial properties play a vital role in spin current injection from the ferromagnetic (FM) layer into the nonmagnetic (NM) layer. So far, impedance matching and spin-orbit coupling are two important, well-known factors in spin current transport in FM/NM heterostructures. In this work, the spin current transport in Y3Fe5O12 (YIG)/NiO/Pt heterostructures was investigated by spin Hall magnetoresistance and inverse spin Hall effect measurements. By inserting a layer of antiferromagnetic insulator NiO, the magnetic proximity effect affecting the Pt atoms owing to YIG and the anomalous spin Hall voltage can be efficiently blocked. Ferromagnetic resonance and spin pumping measurements verified that the ferromagnetic/antiferromagnetic exchange coupling inhibits transmission of the spin current at the YIG/NiO interface when the NiO layer is thick. Atomic force microscopy and spherical aberration-corrected transmission electron microscopy proved that the strong interfacial roughness-enhanced spin scattering between NiO and Pt can greatly increase both the inverse spin Hall voltage and the spin Hall magnetoresistance when the NiO layer is thin or even discontinuous. This interface roughness-dominated spin scattering mechanism based on the YIG/NiO/Pt heterostructure is a new discovery, and there is significant potential for exploiting this mechanism in the construction of low-dissipation spintronic devices with an efficient spin current injection.
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Affiliation(s)
- Lichuan Jin
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China
| | - Kancheng Jia
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China
| | - Dainan Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China
| | - Bo Liu
- Zhejiang Hikstor Technology Co., Ltd. , Hangzhou , 310000 , China
| | - Hao Meng
- Zhejiang Hikstor Technology Co., Ltd. , Hangzhou , 310000 , China
| | - Xiaoli Tang
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China
| | - Zhiyong Zhong
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China
| | - Huaiwu Zhang
- State Key Laboratory of Electronic Thin Films and Integrated Devices , University of Electronic Science and Technology of China , Chengdu , 610054 , China
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15
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Guan M, Wang L, Zhao S, Zhou Z, Dong G, Su W, Min T, Ma J, Hu Z, Ren W, Ye ZG, Nan CW, Liu M. Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802902. [PMID: 30109765 DOI: 10.1002/adma.201802902] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2018] [Revised: 06/22/2018] [Indexed: 06/08/2023]
Abstract
The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high-speed response, and energy efficiency, it can be used for various spintronic applications, including spin-Hall, spin-pumping, and spin-Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited "capping" platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage-induced ferromagnetic ordering, caused by uncompensated d-orbital electrons in the Pt metal layer. Confirmed by first-principle calculations, this finding paves the way for novel voltage-tunable YIG-based spintronics.
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Affiliation(s)
- Mengmeng Guan
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Lei Wang
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Shishun Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Wei Su
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Tai Min
- Center for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Jing Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
- Department of Chemistry and 4D LABS, Simon Fraser University, 8888 University Drive, Burnaby, BC, V5A 1S6, Canada
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
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16
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Vasili HB, Gamino M, Gàzquez J, Sánchez F, Valvidares M, Gargiani P, Pellegrin E, Fontcuberta J. Magnetoresistance in Hybrid Pt/CoFe 2O 4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction. ACS APPLIED MATERIALS & INTERFACES 2018; 10:12031-12041. [PMID: 29546753 DOI: 10.1021/acsami.8b00384] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a flow of charge along a nonmagnetic metal with large spin-orbit coupling. This produces a spin accumulation at the surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal for a full understanding of spin current conductance. Here, we report X-ray absorption and magnetic circular dichroism (XMCD) at Pt M and (Co, Fe) L absorption edges and atomically resolved energy electron loss spectroscopy (EELS) data of Pt/CoFe2O4 bilayers, where CoFe2O4 layers have been capped by Pt grown at different temperatures. It was found that the ADMR differs dramatically, dominated either by spin Hall magnetoresistance (SMR) associated with the spin Hall effect or by anisotropic magnetoresistance. The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at a higher temperature, it becomes magnetic due to interfacial Pt-(Co, Fe) alloying. These results enable differentiation of spin accumulation from interfacial chemical reconstructions and tailoring of the angular-dependent magnetoresistance.
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Affiliation(s)
- Hari Babu Vasili
- ALBA Synchrotron Light Source , Cerdanyola del Vallès, E-08290 Barcelona , Catalonia , Spain
| | - Matheus Gamino
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus UAB , 08193 Bellaterra , Catalonia , Spain
| | - Jaume Gàzquez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus UAB , 08193 Bellaterra , Catalonia , Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus UAB , 08193 Bellaterra , Catalonia , Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source , Cerdanyola del Vallès, E-08290 Barcelona , Catalonia , Spain
| | - Pierluigi Gargiani
- ALBA Synchrotron Light Source , Cerdanyola del Vallès, E-08290 Barcelona , Catalonia , Spain
| | - Eric Pellegrin
- ALBA Synchrotron Light Source , Cerdanyola del Vallès, E-08290 Barcelona , Catalonia , Spain
| | - Josep Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus UAB , 08193 Bellaterra , Catalonia , Spain
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17
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Liang L, Chen Q, Lu J, Talsma W, Shan J, Blake GR, Palstra TTM, Ye J. Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating. SCIENCE ADVANCES 2018; 4:eaar2030. [PMID: 29740612 PMCID: PMC5938224 DOI: 10.1126/sciadv.aar2030] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2017] [Accepted: 02/16/2018] [Indexed: 06/08/2023]
Abstract
Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interest since the emergence of spintronics. We report the reversible electrical switching of ferromagnetic (FM) states in platinum (Pt) thin films by introducing paramagnetic ionic liquid (PIL) as the gating media. The paramagnetic ionic gating controls the movement of ions with magnetic moments, which induces itinerant ferromagnetism on the surface of Pt films, with large coercivity and perpendicular anisotropy mimicking the ideal two-dimensional Ising-type FM state. The electrical transport of the induced FM state shows Kondo effect at low temperature, suggesting spatially separated coexistence of Kondo scattering beneath the FM interface. The tunable FM state indicates that paramagnetic ionic gating could serve as a versatile method to induce rich transport phenomena combining field effect and magnetism at PIL-gated interfaces.
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18
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Peng B, Li Q, Liang X, Song P, Li J, He K, Fu D, Li Y, Shen C, Wang H, Wang C, Liu T, Zhang L, Lu H, Wang X, Zhao J, Xie J, Wu M, Bi L, Deng L, Loh KP. Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS 2 and Yttrium Iron Garnet. ACS NANO 2017; 11:12257-12265. [PMID: 29182851 DOI: 10.1021/acsnano.7b05743] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Manipulation of spin degree of freedom (DOF) of electrons is the fundamental aspect of spintronic and valleytronic devices. Two-dimensional transition metal dichalcogenides (2D TMDCs) exhibit an emerging valley pseudospin, in which spin-up (-down) electrons are distributed in a +K (-K) valley. This valley polarization gives a DOF for spintronic and valleytronic devices. Recently, magnetic exchange interactions between graphene and magnetic insulator yttrium iron garnet (YIG) have been exploited. However, the physics of 2D TMDCs with YIG have not been shown before. Here we demonstrate strong many-body effects in a heterostructure geometry comprising a MoS2 monolayer and YIG. High-order trions are directly identified by mapping absorption and photoluminescence at 12 K. The electron doping density is up to ∼1013 cm-2, resulting in a large splitting of ∼40 meV between trions and excitons. The trions exhibit a high circular polarization of ∼80% under optical pumping by circularly polarized light at ∼1.96 eV; it is confirmed experimentally that both phonon scattering and electron-hole exchange interaction contribute to the valley depolarization with temperature; importantly, a magnetoresistance (MR) behavior in the MoS2 monolayer was observed, and a giant MR ratio of ∼30% is achieved, which is 1 order of magnitude larger than the reported ratio in MoS2/CoFe2O4 heterostructures. Our experimental results confirm that the giant MR behaviors are attributed to the interfacial spin accumulation due to YIG substrates. Our work provides an insight into spin manipulation in a heterostructure of monolayer materials and magnetic substrates.
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Affiliation(s)
- Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Qi Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Xiao Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Peng Song
- Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543
| | - Jian Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Keliang He
- IBM , Malta, New York 12020, United States
| | - Deyi Fu
- Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543
| | - Yue Li
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Chao Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Chuangtang Wang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Tao Liu
- Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States
| | - Li Zhang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Haipeng Lu
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Xin Wang
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Jianliang Xie
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Mingzhong Wu
- Department of Physics, Colorado State University , Fort Collins, Colorado 80523, United States
| | - Lei Bi
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China , Chengdu 610054, China
| | - Kian Ping Loh
- Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , 3 Science Drive 3, Singapore 117543
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19
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Cao S, Street M, Wang J, Wang J, Zhang X, Binek C, Dowben PA. Magnetization at the interface of Cr 2O 3 and paramagnets with large stoner susceptibility. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:10LT01. [PMID: 28075328 DOI: 10.1088/1361-648x/aa58ba] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
From the Cr 2p3/2 x-ray magnetic circular dichroism signal, there is clear evidence of interface polarization with overlayers of both Pd and Pt on chromia (Cr2O3). The residual boundary polarization of chomia is stronger for a Pt overlayer than in the case of a Pd overlayer. The reduction of chromia boundary magnetization with a paramagnetic metal overlayer, compared to the free surface, is interpreted as a response to the induced spin polarization in Pt and Pd. Magnetization induced in a Pt overlayer, via proximity to the chromia boundary magnetization, is evident in the polar magneto-optical Kerr measurements. These results are essential to explainations why Pt and Pd are excellent spacer layers for voltage controlled exchange bias, in the [Pd/Co] n /Pd/Cr2O3 and [Pt/Co] n /Pt/Cr2O3 perpendicular magneto-electric exchange bias systems. The findings pave the way to realize ultra-fast reversal of induced magnetization in a free moment paramagnetic layer, with possible application in voltage-controlled magnetic random access memory.
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Affiliation(s)
- Shi Cao
- Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, United States of America
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20
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Electrodynamic study of YIG filters and resonators. Sci Rep 2016; 6:34739. [PMID: 27698467 PMCID: PMC5048139 DOI: 10.1038/srep34739] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2016] [Accepted: 09/19/2016] [Indexed: 11/18/2022] Open
Abstract
Numerical solutions of coupled Maxwell and Landau-Lifshitz-Gilbert equations for a magnetized yttrium iron garnet (YIG) sphere acting as a one-stage filter are presented. The filter is analysed using finite-difference time-domain technique. Contrary to the state of the art, the study shows that the maximum electromagnetic power transmission through the YIG filter occurs at the frequency of the magnetic plasmon resonance with the effective permeability of the gyromagnetic medium μr ≈ −2, and not at a ferromagnetic resonance frequency. Such a new understanding of the YIG filter operation, makes it one of the most commonly used single-negative plasmonic metamaterials. The frequency of maximum transmission is also found to weakly depend on the size of the YIG sphere. An analytic electromagnetic analysis of resonances in a YIG sphere is performed for circularly polarized electromagnetic fields. The YIG sphere is situated in a free space and in a large spherical cavity. The study demonstrates that both volume resonances and magnetic plasmon resonances can be solutions of the same transcendental equations.
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21
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Song D, Rusz J, Cai J, Zhu J. Detection of electron magnetic circular dichroism signals under zone axial diffraction geometry. Ultramicroscopy 2016; 169:44-54. [DOI: 10.1016/j.ultramic.2016.07.005] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2016] [Revised: 06/28/2016] [Accepted: 07/03/2016] [Indexed: 11/26/2022]
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22
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Li J, Shelford LR, Shafer P, Tan A, Deng JX, Keatley PS, Hwang C, Arenholz E, van der Laan G, Hicken RJ, Qiu ZQ. Direct Detection of Pure ac Spin Current by X-Ray Pump-Probe Measurements. PHYSICAL REVIEW LETTERS 2016; 117:076602. [PMID: 27563981 DOI: 10.1103/physrevlett.117.076602] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2015] [Indexed: 06/06/2023]
Abstract
Despite recent progress in spin-current research, the detection of spin current has mostly remained indirect. By synchronizing a microwave waveform with synchrotron x-ray pulses, we use the ferromagnetic resonance of the Py (Ni_{81}Fe_{19}) layer in a Py/Cu/Cu_{75}Mn_{25}/Cu/Co multilayer to pump a pure ac spin current into the Cu_{75}Mn_{25} and Co layers, and then directly probe the spin current within the Cu_{75}Mn_{25} layer and the spin dynamics of the Co layer by x-ray magnetic circular dichroism. This element-resolved pump-probe measurement unambiguously identifies the ac spin current in the Cu_{75}Mn_{25} layer.
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Affiliation(s)
- J Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
| | - L R Shelford
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter, Devon EX4 4QL, United Kingdom
| | - P Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - A Tan
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
| | - J X Deng
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
| | - P S Keatley
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter, Devon EX4 4QL, United Kingdom
| | - C Hwang
- Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340, Republic of Korea
| | - E Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - G van der Laan
- Magnetic Spectroscopy Group, Diamond Light Source, Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - R J Hicken
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter, Devon EX4 4QL, United Kingdom
| | - Z Q Qiu
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
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23
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Asymmetric magnetic proximity effect in a Pd/Co/Pd trilayer system. Sci Rep 2016; 6:25391. [PMID: 27151368 PMCID: PMC4858727 DOI: 10.1038/srep25391] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2016] [Accepted: 04/15/2016] [Indexed: 11/08/2022] Open
Abstract
In spintronic devices consisting of ferromagnetic/nonmagnetic systems, the ferromagnet-induced magnetic moment in the adjacent nonmagnetic material significantly influences the spin transport properties. In this study, such magnetic proximity effect in a Pd/Co/Pd trilayer system is investigated by x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity, which enables magnetic characterizations with element and depth resolution. We observe that the total Pd magnetic moments induced at the top Co/Pd interface are significantly larger than the Pd moments at the bottom Pd/Co interface, whereas transmission electron microscopy and reflectivity analysis indicate the two interfaces are nearly identical structurally. Such asymmetry in magnetic proximity effects could be important for understanding spin transport characteristics in ferromagnetic/nonmagnetic systems and its potential application to spin devices.
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24
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Chen YT, Takahashi S, Nakayama H, Althammer M, Goennenwein STB, Saitoh E, Bauer GEW. Theory of spin Hall magnetoresistance (SMR) and related phenomena. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:103004. [PMID: 26881498 DOI: 10.1088/0953-8984/28/10/103004] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments.
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Affiliation(s)
- Yan-Ting Chen
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan. Kavli Institute of NanoScience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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25
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Antiferromagnetic proximity effect in epitaxial CoO/NiO/MgO(001) systems. Sci Rep 2016; 6:22355. [PMID: 26932164 PMCID: PMC4773757 DOI: 10.1038/srep22355] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2015] [Accepted: 02/12/2016] [Indexed: 11/08/2022] Open
Abstract
Magnetic proximity effect between two magnetic layers is an important focus of research for discovering new physical properties of magnetic systems. Antiferromagnets (AFMs) are fundamental systems with magnetic ordering and promising candidate materials in the emerging field of antiferromagnetic spintronics. However, the magnetic proximity effect between antiferromagnetic bilayers is rarely studied because detecting the spin orientation of AFMs is challenging. Using X-ray linear dichroism and magneto-optical Kerr effect measurements, we investigated antiferromagnetic proximity effects in epitaxial CoO/NiO/MgO(001) systems. We found the antiferromagnetic spin of the NiO underwent a spin reorientation transition from in-plane to out-of-plane with increasing NiO thickness, with the existence of vertical exchange spring spin alignment in thick NiO. More interestingly, the Néel temperature of the CoO layer was greatly enhanced by the adjacent NiO layer, with the extent of the enhancement closely dependent on the spin orientation of NiO layer. This phenomenon was attributed to different exchange coupling strengths at the AFM/AFM interface depending on the relative spin directions. Our results indicate a new route for modifying the spin configuration and ordering temperature of AFMs through the magnetic proximity effect near room temperature, which should further benefit the design of AFM spintronic devices.
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26
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Liang X, Zhu Y, Peng B, Deng L, Xie J, Lu H, Wu M, Bi L. Influence of Interface Structure on Magnetic Proximity Effect in Pt/Y3Fe5O12 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2016; 8:8175-8183. [PMID: 26967756 DOI: 10.1021/acsami.5b11173] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The influence of interface structure on the magnetic proximity effect (MPE) in Pt/Y3Fe5O12 (YIG) bilayered heterostructures is studied by first-principles calculations based on the density functional theory (DFT). When Pt atoms are in close proximity with Y or Fe ions at the interface, Pt-Y and Pt-Fe bonds are observed. The crystalline orientations and interface termination layers of the YIG strongly modify both the strength and the length of the Pt-Fe bonding and thereby influence the magnetic properties of the Pt. Point defects including tetrahedral Fe, octahedral Fe, and Y vacancies are introduced at the Pt/YIG interface to quantitatively evaluate the influence on the MPE from individual atoms. For the Pt(100)/YIG(100) structure, the interface tetrahedral Fe vacancies can significantly reduce or even completely diminish the magnetic moments in the Pt. In a stark contrast, the octahedral Fe vacancies slightly enhance the Pt magnetism, and the nonmagnetic Y vacancies cause little influences to the Pt magnetism. These results indicate that the strength of the MPE at the Pt/YIG interface strongly depends on the interface structure. This dependence originated from the direct exchange interaction between the Fe 3d and Pt 5d electrons via electronic state hybridization as well as the electron exchange coupling between the Pt atoms.
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Affiliation(s)
- Xiao Liang
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
| | - Yupeng Zhu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
| | - Bo Peng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
| | - Longjiang Deng
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
| | - Jianliang Xie
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
| | - Haipeng Lu
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
| | - Mingzhong Wu
- Physics Department, Colorado State University , Fort Collins, Colorado 80523, United States
| | - Lei Bi
- National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China , Chengdu 610054, People's Republic of China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, China
- Key Laboratory of Multi-spectral Absorbing Materials and Structures, University of Electronic Science and Technology of China, Ministry of Education , Chengdu 610054, People's Republic of China
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27
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Meng K, Xiao J, Wu Y, Miao J, Xu X, Zhao J, Jiang Y. Hybrid magnetoresistance in Pt-based multilayers: Effect originated from strong interfacial spin-orbit coupling. Sci Rep 2016; 6:20522. [PMID: 26843035 PMCID: PMC4740803 DOI: 10.1038/srep20522] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2015] [Accepted: 01/05/2016] [Indexed: 11/11/2022] Open
Abstract
The hybrid magnetoresistance (MR) behaviors in Pt/Co90Fe10/Pt, Mn1.5Ga/Pt and Mn1.5Ga/Pt/Co90Fe10/Pt multilayers have been investigated. Both planer Hall effect (PHE) and angle-dependent MR in Pt/Co90Fe10/Pt revealed the combination of spin Hall MR (SMR) and normal anisotropic MR (AMR), indicating the large contribution of strong spin-orbit coupling (SOC) at the interfaces. When Pt contacted with perpendicular magnetic anisotropy (PMA) metal Mn1.5Ga, the strong interfacial SOC modified the effective anomalous Hall effect. The MR in Mn1.5Ga/Pt/Co90Fe10/Pt is not a simple combination of SMR and AMR, but ascribed to the complicated domain wall scattering and strong interfacial SOC when Pt is sandwiched by the in-plane magnetized Co90Fe10 and the PMA Mn1.5Ga.
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Affiliation(s)
- Kangkang Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jiaxing Xiao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yong Wu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Miao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaoguang Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yong Jiang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
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28
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Gao R, Fu C, Cai W, Chen G, Deng X, Zhang H, Sun J, Shen B. Electric Control of the Hall effect in Pt/Bi0.9La0.1FeO3 bilayers. Sci Rep 2016; 6:20330. [PMID: 26837911 PMCID: PMC4738251 DOI: 10.1038/srep20330] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2015] [Accepted: 12/30/2015] [Indexed: 12/03/2022] Open
Abstract
Platinum metal, being nonmagnetic and with a strong spin-orbit coupling interaction, has been deposited on weak ferromagnetic Bi0.9La0.1FeO3 thin films. The Hall effect is studied as a function of the polarization direction of multiferroic Bi0.9La0.1FeO3 thin films, as well as magnetic field (H) and temperature (T). For the two polarization directions, besides the obvious difference of the anomalous Hall resistance RAH, it increases sharply with decreasing temperature, and even changes sign, thus violating the conventional expression. This observations indicate local magnetic moments in Pt caused by the local electric fields at the interface of Bi0.9La0.1FeO3 films. Also, possible proximity effects and induced magnetic ordering in Pt on weak ferromagnetic Bi0.9La0.1FeO3 thin films of both upward and downward polarization states may exist and their contribution to the spin-related measurements should not be neglected.
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Affiliation(s)
- Rongli Gao
- School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China
| | - Chunlin Fu
- School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China
| | - Wei Cai
- School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China
| | - Gang Chen
- School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China
| | - Xiaoling Deng
- School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing, 401331, China
| | - Hongrui Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190, China
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29
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Kang Y, Chang YS, He W, Cai JW, Kang SS. Strong modification of intrinsic spin Hall effect in FeMn with antiferromagnetic order formation. RSC Adv 2016. [DOI: 10.1039/c6ra22256k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
FeMn films with and without a Cu seed layer were deposited on Y3Fe5O12 (YIG) substrates, and their inverse spin Hall effect (ISHE) was examined through both spin Seebeck effect and spin pumping.
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Affiliation(s)
- Y. Kang
- School of Physics and State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
- Beijing National Laboratory for Condensed Matter Physics
| | - Y. S. Chang
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
| | - W. He
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
| | - J. W. Cai
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
| | - S. S. Kang
- School of Physics and State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
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30
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Yu XQ, Zhu ZG, Su G, Jauho AP. Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides. PHYSICAL REVIEW LETTERS 2015; 115:246601. [PMID: 26705646 DOI: 10.1103/physrevlett.115.246601] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/04/2015] [Indexed: 06/05/2023]
Abstract
The spin and valley-dependent anomalous Nernst effects are analyzed for monolayer MoS_{2} and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g., two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the dip state it is found that carriers with only one spin and from one valley are driven by the temperature gradient.
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Affiliation(s)
- Xiao-Qin Yu
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Sino-Danish Center for Education and Research, Beijing 100190, China
| | - Zhen-Gang Zhu
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, College of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Gang Su
- Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, College of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - A-P Jauho
- Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
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31
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Shang T, Zhan QF, Ma L, Yang HL, Zuo ZH, Xie YL, Li HH, Liu LP, Wang BM, Wu YH, Zhang S, Li RW. Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid. Sci Rep 2015; 5:17734. [PMID: 26639108 PMCID: PMC4671003 DOI: 10.1038/srep17734] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2015] [Accepted: 11/05/2015] [Indexed: 11/09/2022] Open
Abstract
We report an investigation of anisotropic magnetoresistance (AMR) and anomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxial Y3Fe5O12 (YIG) ferromagnetic insulator films. For the Pt/YIG hybrid, large spin-Hall magne toresistance (SMR) along with a sizable conventional anisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence of AHR were observed in the temperature range of 5–300 K. In contrast, a reduced SMR with negligible CAMR and AHR was found in Rh/YIG hybrid. Since CAMR and AHR are characteristics for all ferromagnetic metals, our results suggest that the Pt is likely magnetized by YIG due to the magnetic proximity effect (MPE) while Rh remains free of MPE. Thus the Rh/YIG hybrid could be an ideal model system to explore physics and devices associated with pure spin current.
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Affiliation(s)
- T Shang
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - Q F Zhan
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - L Ma
- Department of Physics, Tongji University, Shanghai, 200092, P. R. China
| | - H L Yang
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - Z H Zuo
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - Y L Xie
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - H H Li
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - L P Liu
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - B M Wang
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
| | - Y H Wu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3 117583, Singapore
| | - S Zhang
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
| | - Run-Wei Li
- Key Laboratory of Magnetic Materials and Devices &Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, P. R. China
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32
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Meier D, Reinhardt D, van Straaten M, Klewe C, Althammer M, Schreier M, Goennenwein STB, Gupta A, Schmid M, Back CH, Schmalhorst JM, Kuschel T, Reiss G. Longitudinal spin Seebeck effect contribution in transverse spin Seebeck effect experiments in Pt/YIG and Pt/NFO. Nat Commun 2015; 6:8211. [PMID: 26394541 PMCID: PMC4598359 DOI: 10.1038/ncomms9211] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2014] [Accepted: 07/30/2015] [Indexed: 10/27/2022] Open
Abstract
The spin Seebeck effect, the generation of a spin current by a temperature gradient, has attracted great attention, but the interplay over a millimetre range along a thin ferromagnetic film as well as unintended side effects which hinder an unambiguous detection have evoked controversial discussions. Here, we investigate the inverse spin Hall voltage of a 10 nm thin Pt strip deposited on the magnetic insulators Y3Fe5O12 and NiFe2O4 with a temperature gradient in the film plane. We show characteristics typical of the spin Seebeck effect, although we do not observe the most striking features of the transverse spin Seebeck effect. Instead, we attribute the observed voltages to the longitudinal spin Seebeck effect generated by a contact tip induced parasitic out-of-plane temperature gradient, which depends on material, diameter and temperature of the tip.
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Affiliation(s)
- Daniel Meier
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - Daniel Reinhardt
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - Michael van Straaten
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - Christoph Klewe
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - Matthias Althammer
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany
| | - Michael Schreier
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany.,Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching, Germany
| | - Sebastian T B Goennenwein
- Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany.,Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München, Germany
| | - Arunava Gupta
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, USA
| | - Maximilian Schmid
- Institute of Experimental and Applied Physics, University of Regensburg, Universitätsstraße 31, 93040 Regensburg, Germany
| | - Christian H Back
- Institute of Experimental and Applied Physics, University of Regensburg, Universitätsstraße 31, 93040 Regensburg, Germany
| | - Jan-Michael Schmalhorst
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - Timo Kuschel
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - Günter Reiss
- Department of Physics, Center for Spinelectronic Materials and Devices, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
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33
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Kosub T, Kopte M, Radu F, Schmidt OG, Makarov D. All-Electric Access to the Magnetic-Field-Invariant Magnetization of Antiferromagnets. PHYSICAL REVIEW LETTERS 2015; 115:097201. [PMID: 26371676 DOI: 10.1103/physrevlett.115.097201] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2015] [Indexed: 05/22/2023]
Abstract
The rich physics of thin film antiferromagnets can be harnessed for prospective spintronic devices given that all-electric assessment of the tiny uncompensated magnetic moment is achieved. On the example of magnetoelectric antiferromagnetic Cr2O3, we prove that spinning-current anomalous Hall magnetometry serves as an all-electric method to probe the field-invariant uncompensated magnetization of antiferromagnets. We obtain direct access to the surface magnetization of magnetoelectric antiferromagnets providing a read-out method for ferromagnet-free magnetoelectric memory. Owing to the great sensitivity, the technique bears a strong potential to address the physics of antiferromagnets. Exemplarily, we apply the method to access the criticality of the magnetic transition for an antiferromagnetic thin film. We reveal the presence of field-invariant uncompensated magnetization even in 6-nm-thin IrMn films and clearly distinguish two contributions, of which only the minor one is involved in interfacial magnetic coupling. This approach is likely to advance the fundamental understanding of the anomalous Hall and magnetic proximity effects.
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Affiliation(s)
- Tobias Kosub
- Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
| | - Martin Kopte
- Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
| | - Florin Radu
- Helmholtz-Zentrum Berlin, 14109 Berlin, Germany
| | - Oliver G Schmidt
- Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
| | - Denys Makarov
- Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
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34
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Kuschel T, Klewe C, Schmalhorst JM, Bertram F, Kuschel O, Schemme T, Wollschläger J, Francoual S, Strempfer J, Gupta A, Meinert M, Götz G, Meier D, Reiss G. Static Magnetic Proximity Effect in Pt/NiFe2O4 and Pt/Fe Bilayers Investigated by X-Ray Resonant Magnetic Reflectivity. PHYSICAL REVIEW LETTERS 2015; 115:097401. [PMID: 26371679 DOI: 10.1103/physrevlett.115.097401] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2014] [Indexed: 06/05/2023]
Abstract
The spin polarization of Pt in Pt/NiFe2O4 and Pt/Fe bilayers is studied by interface-sensitive x-ray resonant magnetic reflectivity to investigate static magnetic proximity effects. The asymmetry ratio of the reflectivity is measured at the Pt L3 absorption edge using circular polarized x-rays for opposite directions of the magnetization at room temperature. The results of the 2% asymmetry ratio for Pt/Fe bilayers are independent of the Pt thickness between 1.8 and 20 nm. By comparison with ab initio calculations, the maximum magnetic moment per spin polarized Pt atom at the interface is determined to be (0.6±0.1) μB for Pt/Fe. For Pt/NiFe2O4 the asymmetry ratio drops below the sensitivity limit of 0.02 μB per Pt atom. Therefore, we conclude, that the longitudinal spin Seebeck effect recently observed in Pt/NiFe2O4 is not influenced by a proximity induced anomalous Nernst effect.
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Affiliation(s)
- T Kuschel
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - C Klewe
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - J-M Schmalhorst
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - F Bertram
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
| | - O Kuschel
- Fachbereich Physik, Universität Osnabrück, Barbarastraße 7, 49069 Osnabrück, Germany
| | - T Schemme
- Fachbereich Physik, Universität Osnabrück, Barbarastraße 7, 49069 Osnabrück, Germany
| | - J Wollschläger
- Fachbereich Physik, Universität Osnabrück, Barbarastraße 7, 49069 Osnabrück, Germany
| | - S Francoual
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
| | - J Strempfer
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
| | - A Gupta
- Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, USA
| | - M Meinert
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - G Götz
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - D Meier
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
| | - G Reiss
- Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, Universitätsstraße 25, 33615 Bielefeld, Germany
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35
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Kehlberger A, Ritzmann U, Hinzke D, Guo EJ, Cramer J, Jakob G, Onbasli MC, Kim DH, Ross CA, Jungfleisch MB, Hillebrands B, Nowak U, Kläui M. Length Scale of the Spin Seebeck Effect. PHYSICAL REVIEW LETTERS 2015; 115:096602. [PMID: 26371671 DOI: 10.1103/physrevlett.115.096602] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2015] [Indexed: 05/12/2023]
Abstract
We investigate the origin of the spin Seebeck effect in yttrium iron garnet (YIG) samples for film thicknesses from 20 nm to 50 μm at room temperature and 50 K. Our results reveal a characteristic increase of the longitudinal spin Seebeck effect amplitude with the thickness of the insulating ferrimagnetic YIG, which levels off at a critical thickness that increases with decreasing temperature. The observed behavior cannot be explained as an interface effect or by variations of the material parameters. Comparison to numerical simulations of thermal magnonic spin currents yields qualitative agreement for the thickness dependence resulting from the finite magnon propagation length. This allows us to trace the origin of the observed signals to genuine bulk magnonic spin currents due to the spin Seebeck effect ruling out an interface origin and allowing us to gauge the reach of thermally excited magnons in this system for different temperatures. At low temperature, even quantitative agreement with the simulations is found.
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Affiliation(s)
- Andreas Kehlberger
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099 Mainz, Germany
| | - Ulrike Ritzmann
- Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
| | - Denise Hinzke
- Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
| | - Er-Jia Guo
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099 Mainz, Germany
| | - Joel Cramer
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099 Mainz, Germany
| | - Gerhard Jakob
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099 Mainz, Germany
| | - Mehmet C Onbasli
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Dong Hun Kim
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Caroline A Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Matthias B Jungfleisch
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, Kaiserslautern 67663, Germany
| | - Burkard Hillebrands
- Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universität Kaiserslautern, Kaiserslautern 67663, Germany
| | - Ulrich Nowak
- Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
| | - Mathias Kläui
- Institute of Physics, Johannes Gutenberg-University Mainz, 55099 Mainz, Germany
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36
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Liu W, He L, Xu Y, Murata K, Onbasli MC, Lang M, Maltby NJ, Li S, Wang X, Ross CA, Bencok P, van der Laan G, Zhang R, Wang KL. Enhancing magnetic ordering in Cr-doped Bi2Se3 using high-TC ferrimagnetic insulator. NANO LETTERS 2015; 15:764-769. [PMID: 25533900 DOI: 10.1021/nl504480g] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi(2-x)Cr(x)Se(3), via the proximity effect using a high-TC ferrimagnetic insulator Y(3)Fe(5)O(12). The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.
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Affiliation(s)
- Wenqing Liu
- York-Nanjing Joint Center for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, Nanjing University , Nanjing 210093, China
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37
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Lin T, Tang C, Alyahayaei HM, Shi J. Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures. PHYSICAL REVIEW LETTERS 2014; 113:037203. [PMID: 25083663 DOI: 10.1103/physrevlett.113.037203] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2014] [Indexed: 06/03/2023]
Abstract
In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.
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Affiliation(s)
- Tao Lin
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Chi Tang
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Hamad M Alyahayaei
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
| | - Jing Shi
- Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
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38
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Miao BF, Huang SY, Qu D, Chien CL. Physical origins of the new magnetoresistance in Pt/YIG. PHYSICAL REVIEW LETTERS 2014; 112:236601. [PMID: 24972219 DOI: 10.1103/physrevlett.112.236601] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2013] [Indexed: 06/03/2023]
Abstract
A new type of magnetoresistance (MR) observed in Pt/YIG when nominally nonmagnetic Pt comes in contact with a ferrimagnetic insulator yttrium iron garnet (YIG) has drawn intense experimental and theoretical interest. In this Letter, we experimentally demonstrate two physical origins of the new MR: a spin current across the Pt/YIG interface and the magnetic proximity effect. The new MR can also be reproduced when Pt is in contact with a nonmagnetic insulator doped with a few percent of Fe impurities. By tuning the YIG surface and inserting an Au layer between the Pt and YIG, we are able to separate the two contributions.
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Affiliation(s)
- B F Miao
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA and National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
| | - S Y Huang
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - D Qu
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - C L Chien
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218, USA
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39
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Du CH, Wang HL, Pu Y, Meyer TL, Woodward PM, Yang FY, Hammel PC. Probing the spin pumping mechanism: exchange coupling with exponential decay in Y3Fe5O12/barrier/Pt heterostructures. PHYSICAL REVIEW LETTERS 2013; 111:247202. [PMID: 24483695 DOI: 10.1103/physrevlett.111.247202] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2013] [Indexed: 06/03/2023]
Abstract
It is widely believed that the mechanism for spin pumping in ferromagnet-nonmagnet bilayers is the exchange interaction between the ferromagnet and nonmagnetic material. We observe 1000-fold exponential decay of spin pumping from thin Y3Fe5O12 films to Pt across insulating barriers, from which exponential decay lengths of 0.16, 0.19, and 0.23 nm are extracted for oxide barriers having band gaps of 4.91, 3.40, and 2.36 eV, respectively. This archetypal signature of quantum tunneling through a barrier underscores the importance of exchange coupling for spin pumping and reveals its dependence on the characteristics of the barrier material.
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Affiliation(s)
- C H Du
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - H L Wang
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - Y Pu
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - T L Meyer
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210, USA
| | - P M Woodward
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210, USA
| | - F Y Yang
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
| | - P C Hammel
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
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40
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Shimizu S, Takahashi KS, Hatano T, Kawasaki M, Tokura Y, Iwasa Y. Electrically tunable anomalous Hall effect in Pt thin films. PHYSICAL REVIEW LETTERS 2013; 111:216803. [PMID: 24313512 DOI: 10.1103/physrevlett.111.216803] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2013] [Indexed: 06/02/2023]
Abstract
Pt is often considered to be an exchange-enhanced paramagnetic material, in which the Stoner criterion for ferromagnetism is nearly satisfied and, thus, external stimuli may induce unconventional magnetic characteristics. We report that a nonmagnetic perturbation in the form of a gate voltage applied via an ionic liquid induces an anomalous Hall effect (AHE) in Pt thin films, which resembles the AHE induced by the contact to Bi-doped yttrium iron garnet. Analysis of detailed temperature and magnetic field experiments indicates that the evolution of the AHE with temperature can be explained in terms of large local moments; the applied electric field induces magnetic moments as large as ~10 μ(B) that follow the Langevin function.
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Affiliation(s)
- Sunao Shimizu
- RIKEN Center for Emergent Matter Science, Wako, Saitama 351-0198, Japan
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41
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Sun Y, Chang H, Kabatek M, Song YY, Wang Z, Jantz M, Schneider W, Wu M, Montoya E, Kardasz B, Heinrich B, te Velthuis SGE, Schultheiss H, Hoffmann A. Damping in yttrium iron garnet nanoscale films capped by platinum. PHYSICAL REVIEW LETTERS 2013; 111:106601. [PMID: 25166689 DOI: 10.1103/physrevlett.111.106601] [Citation(s) in RCA: 53] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2012] [Revised: 03/29/2013] [Indexed: 06/03/2023]
Abstract
Strong damping enhancement in nm-thick yttrium iron garnet (YIG) films due to Pt capping layers was observed. This damping is substantially larger than the expected damping due to conventional spin pumping, is accompanied by a shift in the ferromagnetic resonance field, and can be suppressed by the use of a Cu spacer in between the YIG and Pt films. The data indicate that such damping may originate from the ferromagnetic ordering in Pt atomic layers near the YIG/Pt interface and the dynamic exchange coupling between the ordered Pt spins and the spins in the YIG film.
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Affiliation(s)
- Yiyan Sun
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Houchen Chang
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Michael Kabatek
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Young-Yeal Song
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Zihui Wang
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Michael Jantz
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - William Schneider
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - Mingzhong Wu
- Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
| | - E Montoya
- Physics Department, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - B Kardasz
- Physics Department, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - B Heinrich
- Physics Department, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | | | - Helmut Schultheiss
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Axel Hoffmann
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
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42
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Boehnke A, Walter M, Roschewsky N, Eggebrecht T, Drewello V, Rott K, Münzenberg M, Thomas A, Reiss G. Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2013; 84:063905. [PMID: 23822355 DOI: 10.1063/1.4811130] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.
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Affiliation(s)
- Alexander Boehnke
- Thin Films and Physics of Nanostructures, Universität Bielefeld, Universitätsstrasse 25, D-33615 Bielefeld, Germany.
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