Controlling localized surface plasmon resonances in GeTe nanoparticles using an amorphous-to-crystalline phase transition

Measurement of dielectric function and bandgap of germanium telluride using monochromated electron energy-loss spectroscopy

Using a monochromator in transmission electron microscopy, a low-energy-loss spectrum can provide inter- and intra-band transition information for nanoscale devices with high energy and spatial resolutions. However, some losses, such as Cherenkov radiation, phonon scattering, and surface plasmon resonance superimposed at zero-loss peak, make it asymmetric. These pose limitations to the direct interpretation of optical properties, such as complex dielectric function and bandgap onset in the raw electron energy-loss spectra. This study demonstrates measuring the dielectric function of germanium telluride using an off-axis electron energy-loss spectroscopy method. The interband transition from the measured complex dielectric function agrees with the calculated band structure of germanium telluride. In addition, we compare the zero-loss subtraction models and propose a reliable routine for bandgap measurement from raw valence electron energy-loss spectra. Using the proposed method, the direct bandgap of germanium telluride thin film was measured from the low-energy-loss spectrum in transmission electron microscopy. The result is in good agreement with the bandgap energy measured using an optical method.

Colloidal Ternary Telluride Quantum Dots for Tunable Phase Change Optics in the Visible and Near-Infrared

A structural change between amorphous and crystalline phase provides a basis for reliable and modular photonic and electronic devices, such as nonvolatile memory, beam steerers, solid-state reflective displays, or mid-IR antennas. In this paper, we leverage the benefits of liquid-based synthesis to access phase-change memory tellurides in the form of colloidally stable quantum dots. We report a library of ternary M_xGe_1-xTe colloids (where M is Sn, Bi, Pb, In, Co, Ag) and then showcase the phase, composition, and size tunability for Sn-Ge-Te quantum dots. Full chemical control of Sn-Ge-Te quantum dots permits a systematic study of structural and optical properties of this phase-change nanomaterial. Specifically, we report composition-dependent crystallization temperature for Sn-Ge-Te quantum dots, which is notably higher compared to bulk thin films. This gives the synergistic benefit of tailoring dopant and material dimension to combine the superior aging properties and ultrafast crystallization kinetics of bulk Sn-Ge-Te, while improving memory data retention due to nanoscale size effects. Furthermore, we discover a large reflectivity contrast between amorphous and crystalline Sn-Ge-Te thin films, exceeding 0.7 in the near-IR spectrum region. We utilize these excellent phase-change optical properties of Sn-Ge-Te quantum dots along with liquid-based processability for nonvolatile multicolor images and electro-optical phase-change devices. Our colloidal approach for phase-change applications offers higher customizability of materials, simpler fabrication, and further miniaturization to the sub-10 nm phase-change devices.

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and chalcogenides when there is a change in external conditions such as temperature and pressure. Along with phase transitions in these phase change materials (PCMs) come dramatic contrasts in various physical properties, which can be engineered to manipulate electrons, photons, polaritons, and phonons at the nanoscale, offering new opportunities for reconfigurable, active nanodevices. In this review, we particularly discuss phase-transition-enabled active nanotechnologies in nonvolatile electrical memory, tunable metamaterials, and metasurfaces for manipulation of both free-space photons and in-plane polaritons, and multifunctional emissivity control in the infrared (IR) spectrum. The fundamentals of PCMs are first introduced to explain the origins and principles of phase transitions. Thereafter, we discuss multiphysical nanodevices for electronic, photonic, and thermal management, attesting to the broad applications and exciting promises of PCMs. Emerging trends and valuable applications in all-optical neuromorphic devices, thermal data storage, and encryption are outlined in the end.

Intraband Transition and Localized Surface Plasmon Resonance of Metal Chalcogenides Nanocrystals and their Dependence on Crystal Structure

Understanding the localized surface plasmon resonance (LSPR) and the intraband transition of semiconductor nanocrystals (NCs) has attracted considerable attention since it can provide the opportunity to investigate the boundary between...

Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications

Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to another one. This peculiarity makes PCMs ideal candidates for a number of applications including sensors, active displays, photonic volatile and non-volatile memories for information storage and computer science and optoelectronic devices. This review analyzes different examples of PCMs, in particular germanium–antimonium tellurides and vanadium dioxide (VO₂) and their applications in the above-mentioned fields, with a detailed discussion on potential, limitations and challenges.

Room Temperature Mid-IR Detection through Localized Surface Vibrational States of SnTe Nanocrystals

Quantum dots (QDs) are now well established as promising materials for room temperature mid-infrared (MIR) detection beyond 3 μm. Here, we have replaced commonly reported mercury based quantum dots with less toxic SnTe and PbSnTe. Inverse MIR detection at room temperature is demonstrated with planar, solution, and air-processed PbSnTe and SnTe QD devices. The detection mechanism is shown to be mediated by an interaction between MIR radiation and the vibrational stretches of adsorbed hydroxyl species. Devices are shown to possess mA/W responsivity via a reduction in conductance due to MIR irradiation and, unlike classic MIR photoconductors, are unaffected by visible wavelengths. As such, these devices offer the possibility of MIR thermal imaging that has an intrinsic solution to the blinding caused by higher energy light sources.

Correlating Carrier Density and Emergent Plasmonic Features in Cu2-xSe Nanoparticles

Recently, a wide variety of new nanoparticle compositions have been identified as potential plasmonic materials including earth-abundant metals such as aluminum, highly doped semiconductors, as well as metal pnictides. For semiconductor compositions, plasmonic properties may be tuned not only by nanoparticle size and shape, but also by charge carrier density which can be controlled via a variety of intrinsic and extrinsic doping strategies. Current methods to quantitatively determine charge carrier density primarily rely on interpretation of the nanoparticle extinction spectrum. However, interpretation of nanoparticle extinction spectra can be convoluted by factors such as particle ligands, size distribution and/or aggregation state which may impact the charge carrier information extracted. Therefore, alternative methods to quantify charge carrier density may be transformational in the development of these new materials and would facilitate previously inaccessible correlations between particle synthetic routes, crystallographic features, and emergent optoelectronic properties. Here, we report the use of ⁷⁷Se solid state nuclear magnetic resonance (NMR) spectroscopy to quantitatively determine charge carrier density in a variety of Cu_2-xSe nanoparticle compositions and correlate this charge carrier density with particle crystallinity and extinction features. Importantly, we show that significant charge carrier populations are present even in nanoparticles without spectroscopically discernible plasmonic features and with crystal structures indistinguishable from fully reduced Cu₂Se. These results highlight the potential impact of the NMR-based carrier density measurement, especially in the study of plasmon emergence in these systems (i.e., at low dopant concentrations).

Cation Exchange Combined with Kirkendall Effect in the Preparation of SnTe/CdTe and CdTe/SnTe Core/Shell Nanocrystals

Controlling the synthesis of narrow band gap semiconductor nanocrystals (NCs) with a high-quality surface is of prime importance for scientific and technological interests. This Letter presents facile solution-phase syntheses of SnTe NCs and their corresponding core/shell heterostructures. Here, we synthesized monodisperse and highly crystalline SnTe NCs by employing an inexpensive, nontoxic precursor, SnCl2, the reactivity of which was enhanced by adding a reducing agent, 1,2-hexadecanediol. Moreover, we developed a synthesis procedure for the formation of SnTe-based core/shell NCs by combining the cation exchange and the Kirkendall effect. The cation exchange of Sn(2+) by Cd(2+) at the surface allowed primarily the formation of SnTe/CdTe core/shell NCs. Further continuation of the reaction promoted an intensive diffusion of the Cd(2+) ions, which via the Kirkendall effect led to the formation of the inverted CdTe/SnTe core/shell NCs.

Observation of Considerable Upconversion Enhancement Induced by Cu2-xS Plasmon Nanoparticles

Localized surface plasmon resonances (LSPRs) are achieved in heavily doped semiconductor nanoparticles (NPs) with appreciable free carrier concentrations. In this paper, we present the photonic, electric, and photoelectric properties of plasmonic Cu2-xS NPs/films and the utilization of LSPRs generated from semiconductor NPs as near-infrared antennas to enhance the upconversion luminescence (UCL) of NaYF4:Yb(3+),Er(3+) NPs. Our results suggest that the LSPRs in Cu2-xS NPs originate from ligand-confined carriers and that a heat treatment resulted in the decomposition of ligands and oxidation of Cu2-xS NPs; these effects led to a decrease of the Cu(2+)/Cu(+) ratio, which in turn resulted in the broadening, decrease in intensity, and red-shift of the LSPRs. In the presence of a MoO3 spacer, the UCL intensity of NaYF4:Yb(3+),Er(3+) NPs was substantially improved and exhibited extraordinary power-dependent behavior because of the energy band structure of the Cu2-xS semiconductor. These findings provide insights into the nature of LSPR in semiconductors and their interaction with nearby emitters and highlight the possible application of LSPR in photonic and photoelectric devices.

Pulsed Lasers Employing Solution-Processed Plasmonic Cu3- x P Colloidal Nanocrystals

A new approach to synthesize self-doped colloidal Cu3-x P NCs with controlled size and localized surface plasmon resonance absorption is reported. These Cu3-x P NCs show ultrafast exciton dynamics and huge optical nonlinearities due to plasmonic resonances, which afford the first demonstration of plasmonic Cu3-x P NCs as simple, effective, and solution-processed nonlinear absorbers for high-energy Q-switched fiber laser.

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals

Localized surface plasmon resonance (LSPR) of doped Si nanocrystals (NCs) is critical to the development of Si-based plasmonics. We now experimentally show that LSPR can be obtained from both B- and P-doped Si NCs in the mid-infrared region. Both experiments and calculations demonstrate that the Drude model can be used to describe the LSPR of Si NCs if the dielectric screening and carrier effective mass of Si NCs are considered. When the doping levels of B and P are similar, the LSPR energy of B-doped Si NCs is higher than that of P-doped Si NCs because B is more efficiently activated to produce free carriers than P in Si NCs. We find that the plasmonic coupling between Si NCs is effectively blocked by oxide at the NC surface. The LSPR quality factors of B- and P-doped Si NCs approach those of traditional noble metal NCs. We demonstrate that LSPR is an effective means to gain physical insights on the electronic properties of doped Si NCs. The current work on the model semiconductor NCs, i.e., Si NCs has important implication for the physical understanding and practical use of semiconductor NC plasmonics.

Non-injection synthesis of doped zinc oxide plasmonic nanocrystals

Plasmonic metal oxide nanocrystals bridge the optoelectronic gap between semiconductors and metals. In this study, we report a facile, non-injection synthesis of ZnO nanocrystals doped with Al, Ga, or In. The reaction readily permits dopant/zinc atomic ratios of over 15%, is amenable to high precursor concentrations (0.2 M and greater), and provides high reaction yields (>90%). The resulting colloidal dispersions exhibit high transparency in the visible spectrum and a wavelength-tunable infrared absorption, which arises from a dopant-induced surface plasmon resonance. Through a detailed investigation of reaction parameters, the reaction mechanism is fully characterized and correlated to the optical properties of the synthesized nanocrystals. The distinctive optical features of these doped nanocrystals are shown to be readily harnessed within thin films that are suitable for optoelectronic applications.

Plasmon-in-a-Box: On the Physical Nature of Few-Carrier Plasmon Resonances

Recent demonstrations in doped semiconductor nanocrystals establish that a plasmon resonance can be sustained by a handful of charge carriers, much smaller in number than conventionally thought. This finding raises questions about the physical nature of such a collective resonance, a fundamental question in condensed matter and many-body physics, which the author addresses here by means of a plasmon-in-a-box model. A small number of carriers confined within a nanocrystal exhibit multiple transitions of individual carriers between quantized states. However, as carriers are progressively added, spectral lines associated with single-carrier excitations evolve into a band representing a collective resonance. This evolution is gradual, and it involves an intermediate regime where single-carrier excitations and few-carrier collective excitations coexist, until, at high carrier numbers, a purely classical collective resonance involving all carriers in the nanocrystal is sustained. The author finds that the emergence of the plasmon resonance is a density-driven transition; at high enough carrier densities, the Coulomb repulsion between carriers becomes strong enough to allow individual carriers to overcome their confinement to the nanocrystal lattice and to participate in a collective excitation within the mean Coulomb field of other carriers. The findings represent deeper insight into the physical picture of a plasmon resonance and serve as a potential design guide for nanoscale optoelectronic components and photocatalytic plasmonic clusters.

Dependence of the absorption and optical surface plasmon scattering of MoS₂ nanoparticles on aspect ratio, size, and media

The optical and electronic properties of suspensions of inorganic fullerene-like nanoparticles of MoS2 are studied through light absorption and zeta-potential measurements and compared to those of the corresponding microscopic platelets. The total extinction measurements show that, in addition to excitonic peaks and the indirect band gap transition, a new peak is observed at 700-800 nm. This spectral peak has not been reported previously for MoS2. Comparison of the total extinction and decoupled absorption spectrum indicates that this peak largely originates from scattering. Furthermore, the dependence of this peak on nanoparticle size, shape, and surface charge, as well as solvent refractive index, suggests that this transition arises from a plasmon resonance.

Plasmon Resonances of Semiconductor Nanocrystals: Physical Principles and New Opportunities

The discovery of localized surface plasmon resonances (LSPRs) in doped semiconductor nanocrystals has opened a new regime in plasmonics. We address both the technological and fundamental advances made possible by the realization of LSPRs in semiconductor nanocrystals. LSPRs were originally thought to be specific only to metallic nanostructures, but since their manifestation in semiconductor nanostructures, LSPRs are being seen as ubiquitous optical signatures of charge carriers. As fingerprints of a charge carrier collection, LSPRs of semiconductors are emerging as optical probes of processes that involve carrier dynamics, including redox reactions, electrochemistry, phase transitions, and photocatalysis. Unlike their electrical counterparts, LSPRs allow remote contactless probing and minimal device design. Ultrasmall semiconductor quantum dots are now enabling access to plasmon resonances of a handful of charge carriers, allowing us to ask fundamental questions regarding the lower limit of charge carriers needed to sustain a plasmon resonance, the emergence of a collective mode from a single-electron transition, and the effect of quantum confinement on plasmon resonances. These fundamental issues are discussed here, along with the need for new physical models required to capture the unique aspects of semiconductor LSPRs.

Heavily-doped colloidal semiconductor and metal oxide nanocrystals: an emerging new class of plasmonic nanomaterials

The creation and study of non-metallic nanomaterials that exhibit localized surface plasmon resonance (LSPR) interactions with light is a rapidly growing field of research. These doped nanocrystals, mainly self-doped semiconductor nanocrystals (NCs) and extrinsically-doped metal oxide NCs, have extremely high concentrations of free charge carriers, which allows them to exhibit LSPR at near infrared (NIR) wavelengths. In this tutorial review, we discuss recent progress in developing and synthesizing doped semiconductor and metal oxide nanocrystals with LSPR, and in studying the optical properties of these plasmonic nanocrystals. We go on to discuss their growing potential for advancing biomedical and optoelectronic applications.

Near-infrared active metamaterials and their applications in tunable surface-enhanced Raman scattering

By utilizing the phase change properties of vanadium dioxide (VO2), we have demonstrated the tuning of the electric and magnetic modes of split ring resonators (SRRs) simultaneously within the near IR range. The electric resonance wavelength is blue-shift about 73 nm while the magnetic resonance mode is red-shifted about 126 nm during the phase transition from insulating to metallic phases. Due to the hysteresis phenomenon of VO2 phase transition, both the electric and magnetic modes shifts are hysteretic. In addition to the frequency shift, the magnetic mode has a trend to vanish due to the fact that the metallic phase VO2 has the tendency to short the gap of SRR. We have also demonstrated the application of this active metamaterials in tunable surface-enhanced Raman scattering (SERS), for a fixed excitation laser wavelength, the Raman intensity can be altered significantly by tuning the electric mode frequency of SRR, which is accomplished by controlling the phase of VO2 with an accurate temperature control.

Charge-tunable quantum plasmons in colloidal semiconductor nanocrystals

Nanomaterials exhibiting plasmonic optical responses are impacting sensing, information processing, catalysis, solar, and photonics technologies. Recent advances have expanded the portfolio of plasmonic nanostructures into doped semiconductor nanocrystals, which allow dynamic manipulation of carrier densities. Once interpreted as intraband single-electron transitions, the infrared absorption of doped semiconductor nanocrystals is now commonly attributed to localized surface plasmon resonances and analyzed using the classical Drude model to determine carrier densities. Here, we show that the experimental plasmon resonance energies of photodoped ZnO nanocrystals with controlled sizes and carrier densities diverge from classical Drude model predictions at small sizes, revealing quantum plasmons in these nanocrystals. A Lorentz oscillator model more adequately describes the data and illustrates a closer link between plasmon resonances and single-electron transitions in semiconductors than in metals, highlighting a fundamental contrast between these two classes of plasmonic materials.

New materials for tunable plasmonic colloidal nanocrystals

We present a review on the emerging materials for novel plasmonic colloidal nanocrystals.