Giant Room Temperature Interface Spin Hall and Inverse Spin Hall Effects

Large Tunable Spin-to-Charge Conversion in Ni80Fe20/Molybdenum Disulfide by Cu Insertion

Spin-to-charge conversion at the interface between magnetic materials and transition metal dichalcogenides has drawn great interest in the research efforts to develop fast and ultralow power consumption devices for spintronic applications. Here, we report room temperature observations of spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and molybdenum disulfide (MoS2). This phenomenon can be characterized by the inverse Edelstein effect length (λIEE), which is enhanced with decreasing MoS2 thicknesses, demonstrating the dominant role of spin-orbital coupling (SOC) in MoS2. The spin-to-charge conversion can be significantly improved by inserting a Cu interlayer between Py and MoS2, suggesting that the Cu interlayer can prevent magnetic proximity effect from the Py layer and protect the SOC on the MoS2 surface from exchange interactions with Py. Furthermore, the Cu-MoS2 interface can enhance the spin current and improve electronic transport. Our results suggest that tailoring the interface of magnetic heterostructures provides an alternative strategy for the development of spintronic devices to achieve higher spin-to-charge conversion efficiencies.

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe2/Ni80Fe20 Heterostructures

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.

Switching of Perpendicular Magnetization by Spin-Orbit Torque

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.

Significant Role of Interfacial Spin-Orbit Coupling in the Spin-to-Charge Conversion in Pt/NiFe Heterostructure

For the spin-to-charge conversion (SCC) in heavy metal/ferromagnet (HM/FM) heterostructure, the contribution of interfacial spin-orbit coupling (SOC) remains controversial. Here, we investigate the SCC process of the Pt/NiFe heterostructure by the spin pumping in YIG/Pt/NiFe/IrMn multilayers. Due to the exchange bias of NiFe/IrMn structure, the NiFe magnetization can be switched between magnetically unsaturated and saturated states by opposite resonance fields of YIG layer. The spin-pumping signal is found to decrease significantly when the NiFe magnetization is changed from the saturated state to the unsaturated state. Theoretical analysis indicates that the interfacial spin absorption is enhanced for the above-mentioned NiFe magnetic state change, which results in the increased and decreased spin flow in the Pt layer and across the Pt/NiFe interface, respectively. These results demonstrate that in our case the interfacial SOC effect at the Pt/NiFe interface is dominant over the bulk inverse spin Hall effect in the Pt layer. Our work reveals a significant role of interfacial SOC in the SCC in HM/FM heterostructure, which can promote the development of high-efficiency spintronic devices through interfacial engineering.

Large interfacial contribution to ultrafast THz emission by inverse spin Hall effect in CoFeB/Ta heterostructure

Ultrafast THz radiation generation from ferromagnetic/nonmagnetic (FM/NM) spintronic heterostructures generally exploits the spin-charge conversion within the nonmagnetic layer and its interface with the ferromagnetic layer. Various possible sub-contributions to the underlying mechanism need to be exploited not only for investigating the intricacies at the fundamental level in the material properties themselves but also for improving their performance for broadband and high-power THz emission. Here, we report ultrafast THz emission from (CoFeB,Fe)/(Ta,Pt) bilayers at varying sample temperatures to unravel the role of intrinsic and extrinsic spin-charge conversion processes through the extracted values of spin-Hall conductivities. An enhanced THz emission along with temperature-dependent THz signal polarity reversal is observed in the case of annealed CoFeB/Ta. These results demonstrate a large interfacial contribution to the overall spin-Hall angle arising from the modified interface in the annealed CoFeB/Ta.

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Temperature-dependent THz emission from spintronic heterostructures

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THz polarity reversal at a certain temperature in the annealed CoFeB/Ta

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Determination of spin-Hall conductivity from the efficiency of THz emission

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Distinguishing the intrinsic/extrinsic contributions to spin-charge conversion

Observation of the Orbital Rashba-Edelstein Magnetoresistance

We report the observation of magnetoresistance (MR) that could originate from the orbital angular momentum (OAM) transport in a permalloy (Py)/oxidized Cu (Cu^{*}) heterostructure: the orbital Rashba-Edelstein magnetoresistance. The angular dependence of the MR depends on the relative angle between the induced OAM and the magnetization in a similar fashion as the spin Hall magnetoresistance. Despite the absence of elements with large spin-orbit coupling, we find a sizable MR ratio, which is in contrast to the conventional spin Hall magnetoresistance which requires heavy elements. Through Py thickness-dependence studies, we conclude another mechanism beyond the conventional spin-based scenario is responsible for the MR observed in Py/Cu^{*} structures-originated in a sizable transport of OAM. Our findings not only suggest the current-induced torques without using any heavy elements via the OAM channel but also provide an important clue towards the microscopic understanding of the role that OAM transport can play for magnetization dynamics.

Orbital torque in magnetic bilayers

The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. As the orbital current carries the angular momentum as the spin current does, injection of the orbital current into a ferromagnet can result in torque on the magnetization, which provides a way to detect the orbital Hall effect. With this motivation, we examine the current-induced spin-orbit torques in various ferromagnet/heavy metal bilayers by theory and experiment. Analysis of the magnetic torque reveals the presence of the contribution from the orbital Hall effect in the heavy metal, which competes with the contribution from the spin Hall effect. In particular, we find that the net torque in Ni/Ta bilayers is opposite in sign to the spin Hall theory prediction but instead consistent with the orbital Hall theory, which unambiguously confirms the orbital torque generated by the orbital Hall effect. Our finding opens a possibility of utilizing the orbital current for spintronic device applications, and it will invigorate researches on spin-orbit-coupled phenomena based on orbital engineering.

Strain-Mediated Spin-Orbit Torque Enhancement in Pt/Co on Flexible Substrate

Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices.

Spin-Flip Diffusion Length in 5d Transition Metal Elements: A First-Principles Benchmark

Little is known about the spin-flip diffusion length l_{sf}, one of the most important material parameters in the field of spintronics. We use a density-functional-theory based scattering approach to determine values of l_{sf} that result from electron-phonon scattering as a function of temperature for all 5d transition metal elements. l_{sf} does not decrease monotonically with the atomic number Z but is found to be inversely proportional to the density of states at the Fermi level. By using the same local current methodology to calculate the spin Hall angle Θ_{sH} that characterizes the efficiency of the spin Hall effect, we show that the products ρ(T)l_{sf}(T) and Θ_{sH}(T)l_{sf}(T) are constant.

Effects of Interfacial Oxidization on Magnetic Damping and Spin-Orbit Torques

We investigate the effects of interfacial oxidation on the perpendicular magnetic anisotropy, magnetic damping, and spin-orbit torques in heavy-metal (Pt)/ferromagnet (Co or NiFe)/capping (MgO/Ta, HfO_x, or TaN) structures. At room temperature, the capping materials influence the effective surface magnetic anisotropy energy density, which is associated with the formation of interfacial magnetic oxides. The magnetic damping parameter of Co is considerably influenced by the capping material (especially MgO) while that of NiFe is not. This is possibly due to extra magnetic damping via spin-pumping process across the Co/CoO interface and incoherent magnon generation (spin fluctuation) developed in the antiferromagnetic CoO. It is also observed that both antidamping and field-like spin-orbit torque efficiencies vary with the capping material in the thickness ranges we examined. Our results reveal the crucial role of interfacial oxides on the perpendicular magnetic anisotropy, magnetic damping, and spin-orbit torques.

Simultaneous observation of anti-damping and the inverse spin Hall effect in the La0.67Sr0.33MnO3/Pt bilayer system

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.33MnO3/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient (α) of a La0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit a decrease in α with an increase in Pt thickness. This decrease in the value of α is probably due to high anti-damping like torque. Furthermore, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as the anomalous Hall effect and anisotropic magnetoresistance. We have observed a high spin pumping voltage (∼20 μV). The results indicate that both anti-damping and spin pumping phenomena occur simultaneously.

Rashba Effect in Functional Spintronic Devices

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

Interfacial spin-orbit torques

Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.

Current-Induced Spin-Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin-orbit torque (SOT), which originates from the spin-orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

Negative spin Hall magnetoresistance of normal metal/ferromagnet bilayers

Interconversion between charge and spin through spin-orbit coupling lies at the heart of condensed-matter physics. In normal metal/ferromagnet bilayers, a concerted action of the interconversions, the spin Hall effect and its inverse effect of normal metals, results in spin Hall magnetoresistance, whose sign is always positive regardless of the sign of spin Hall conductivity of normal metals. Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to interfacial spin-orbit coupling at normal metal/ferromagnet interfaces can give rise to negative spin Hall magnetoresistance. Given that recent studies found the conversion from charge currents to spin currents at normal metal/ferromagnet interfaces, our work provides a missing proof of its reciprocal spin-current-to-charge-current conversion at same interface. Our result suggests that interfacial spin-orbit coupling effect can dominate over bulk effects, thereby demanding interface engineering for advanced spintronics devices.

Disorder Dependence of Interface Spin Memory Loss

The discontinuity of a spin-current through an interface caused by spin-orbit coupling is characterized by the spin memory loss (SML) parameter δ. We use first-principles scattering theory and a recently developed local current scheme to study the SML for Au|Pt, Au|Pd, Py|Pt, and Co|Pt interfaces. We find a minimal temperature dependence for nonmagnetic interfaces and a strong dependence for interfaces involving ferromagnets that we attribute to the spin disorder. The SML is larger for Co|Pt than for Py|Pt because the interface is more abrupt. Lattice mismatch and interface alloying strongly enhance the SML that is larger for a Au|Pt than for a Au|Pd interface. The effect of the proximity-induced magnetization of Pt is negligible.

Theory of Current-Induced Angular Momentum Transfer Dynamics in Spin-Orbit Coupled Systems

Motivated by the importance of understanding various competing mechanisms to the current-induced spin-orbit torque on magnetization in complex magnets, we develop a theory of current-induced spin-orbital coupled dynamics in magnetic heterostructures. The theory describes angular momentum transfer between different degrees of freedom in solids, e.g., the electron orbital and spin, the crystal lattice, and the magnetic order parameter. Based on the continuity equations for the spin and orbital angular momenta, we derive equations of motion that relate spin and orbital current fluxes and torques describing the transfer of angular momentum between different degrees of freedom, achieved in a steady state under an applied external electric field. We then propose a classification scheme for the mechanisms of the current-induced torque in magnetic bilayers. We evaluate the sources of torque using density functional theory, effectively capturing the impact of the electronic structure on these quantities. We apply our formalism to two different magnetic bilayers, Fe/W(110) and Ni/W(110), which are chosen such that the orbital and spin Hall effects in W have opposite sign and the resulting spin- and orbital-mediated torques can compete with each other. We find that while the spin torque arising from the spin Hall effect of W is the dominant mechanism of the current-induced torque in Fe/W(110), the dominant mechanism in Ni/W(110) is the orbital torque originating in the orbital Hall effect of the non-magnetic substrate. Thus the effective spin Hall angles for the total torque are negative and positive in the two systems. Our prediction can be experimentally identified in moderately clean samples, where intrinsic contributions dominate. This clearly demonstrates that our formalism is ideal for studying the angular momentum transfer dynamics in spin-orbit coupled systems as it goes beyond the "spin current picture" by naturally incorporating the spin and orbital degrees of freedom on an equal footing. Our calculations reveal that, in addition to the spin and orbital torque, other contributions such as the interfacial torque and self-induced anomalous torque within the ferromagnet are not negligible in both material systems.

Critical Spin Fluctuation Mechanism for the Spin Hall Effect

We propose mechanisms for the spin Hall effect in metallic systems arising from the coupling between conduction electrons and local magnetic moments that are dynamically fluctuating. Both a side-jump-type mechanism and a skew-scattering-type mechanism are considered. In either case, dynamical spin fluctuation gives rise to a nontrivial temperature dependence in the spin Hall conductivity. This leads to the enhancement in the spin Hall conductivity at nonzero temperatures near the ferromagnetic instability. The proposed mechanisms could be observed in 4d or 5d metallic compounds.

Interface induced enhancement of inverse spin Hall voltage in NiFe/Pt bilayers capped by MgO layer

In ferromagnet/heavy metal bilayers, a spin current can be generated under the ferromagnetic resonance (FMR) condition, and then converted into a charge current in adjacent nonmagnetic metals through inverse spin Hall effect (ISHE). Here, we report an experimental observation of interface induced ISHE enhancement in NiFe/Pt bilayers covered by MgO layer. Compared to bare NiFe/Pt bilayers, Pt/MgO interface induces an enhancement of the spin-charge conversion in the NiFe/Pt/MgO trilayers with very thin Pt layers, in agreement with the corresponding trend of Gilbert damping enhancement. When the thickness of Pt is below 1.6 nm, the ISHE induced charge current has about 70% enhancement. These results open a new pathway to improve the spin-charge conversion efficiency by interface engineering.

Current-Induced Modulation of the Interfacial Dzyaloshinskii-Moriya Interaction

The Dzyaloshinskii-Moriya (DM) interaction is an antisymmetric exchange interaction that is responsible for the emergence of chiral magnetism. The origin of the DM interaction, however, remains to be identified albeit the large number of studies reported on related effects. It has been recently suggested that the DM interaction is equivalent to an equilibrium spin current density originating from spin-orbit coupling, an effect referred to as the spin Doppler effect. The model predicts that the DM interaction can be controlled by spin current injected externally. Here we show that the DM exchange constant (D) in W/CoFeB-based heterostructures can be modulated with external current passed along the film plane. At higher current, D decreases with increasing current, which we infer is partly due to the adiabatic spin transfer torque. At lower current, D increases linearly with current regardless of the polarity of current flow. The rate of increase in D with the current density agrees with that predicted by the model based on the spin Doppler effect. These results imply that the DM interaction at the heavy-metal-ferromagnetic-metal interface partly originates from an equilibrium interface spin (polarized) current which can be modulated externally.

Interface-Induced Anomalous Hall Conductivity in a Confined Metal

The mature silicon technological platform is actively explored for spintronic applications. Metal silicides are an integral part of the Si technology used as interconnects, gate electrodes, and diffusion barriers; their epitaxial integration with Si results in premier contacts. Recent studies highlight the exceptional role of electronic discontinuities at interfaces in the spin-dependent transport properties. Here, we report a new type of Hall conductivity driven by sharp interfaces of Eu silicide, an antiferromagnetic metal, sandwiched between two insulators - Si and SiO _x. Quasi-ballistic transport probes spin-orbit coupling at the interfaces, in particular, charge-spin interconversion. Transverse magnetic field results in anomalous Hall effect signals of an unusual line shape. The interplay between opposite-sign signals from the two interfaces allows efficient control over the magnitude and sign of the overall effect. Selective engineering of interfaces singles out a particular spin signal. The two-channel nature of the effect and its high tunability offer new functional possibilities for future spintronic devices.

Observation of Extrinsic Photo-Induced Inverse Spin Hall Effect in a GaAs/AlGaAs Two-Dimensional Electron Gas

The inverse spin Hall effect induced by circularly polarized light has been observed in a GaAs/AlGaAs two-dimensional electron gas. The spin transverse force has been determined by fitting the photo-induced inverse spin Hall effect (PISHE) current to a theoretical model. The PISHE current is also measured at different light power and different light spot profiles, and all the measurement results are in good agreement with the theoretical calculations. We also measure the PISHE current at different temperatures (i.e., from 77 to 300 K). The temperature dependence of the PISHE current indicates that the extrinsic mechanism plays a dominant role, which is further confirmed by the weak dependence of the PISHE current on the crystal orientation of the sample.

Interface-Generated Spin Currents

Transport calculations based on ab initio band structures reveal large interface-generated spin currents at Co/Pt, Co/Cu, and Pt/Cu interfaces. These spin currents are driven by in-plane electric fields but flow out of plane and can have similar strengths to spin currents generated by the spin Hall effect in bulk Pt. Each interface generates spin currents with polarization along z[over ^]×E, where z[over ^] is the interface normal and E denotes the electric field. The Co/Cu and Co/Pt interfaces additionally generate spin currents with polarization along m[over ^]×(z[over ^]×E), where m[over ^] gives the magnetization direction of Co. The latter spin polarization is controlled by-but not aligned with-the magnetization, providing a novel mechanism for generating spin torques in magnetic trilayers.

Giant antidamping orbital torque originating from the orbital Rashba-Edelstein effect in ferromagnetic heterostructures

Enhancing the in-plane current-induced torque efficiency in inversion-symmetry-breaking ferromagnetic heterostructures is of both fundamental and practical interests for emerging magnetic memory device applications. Here, we present an interface-originated magnetoelectric effect, the orbital Rashba–Edelstein effect, for realizing large torque efficiency in Pt/Co/SiO₂/Pt films with strong perpendicular magnetic anisotropy (PMA). The key element is a pronounced Co 3d orbital splitting due to asymmetric orbital hybridization at the Pt/Co and Co/SiO₂ interfaces, which not only stabilizes the PMA but also produces a large orbital torque upon the Co magnetization with current injection. The torque efficiency is found to be strongly magnetization direction- and temperature-dependent, and can reach up to 2.83 at room temperature, which is several times to one order of magnitude larger than those previously reported. This work highlights the active role of the orbital anisotropy for efficient torque generation and indicates a route for torque efficiency optimization through orbital engineering.

The emerging spintronics applications are hampered by low current-induced torque efficiency in, for example, inversion-symmetry-breaking ferromagnetic heterostructures. Here the authors demonstrate an orbital Rashba-Edelstein effect which can enhance the torque efficiency in Pt/Co/SiO₂/Pt films due to the intrinsic Co 3d orbital anisotropy.

Direct visualization of current-induced spin accumulation in topological insulators

Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-orbitronics and efficient magnetization manipulation. Here we report the direct spatial imaging of current-induced spin accumulation at the channel edges of Bi2Se3 and BiSbTeSe2 topological insulators as well as Pt by a scanning photovoltage microscope at room temperature. The spin polarization is along the out-of-plane direction with opposite signs for the two channel edges. The accumulated spin direction reverses sign upon changing the current direction and the detected spin signal shows a linear dependence on the magnitude of currents, indicating that our observed phenomena are current-induced effects. The spin Hall angle of Bi2Se3, BiSbTeSe2, and Pt is determined to be 0.0085, 0.0616, and 0.0085, respectively. Our results open up the possibility of optically detecting the current-induced spin accumulations, and thus point towards a better understanding of the interaction between spins and circularly polarized light.

Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

Spin Hall angle (θ_SH) and spin diffusion length (λ_sd) are the key parameters in describing the spin-charge conversion, which is an integral part of spintronics. Despite their importance and much effort devoted to quantifying them, significant inconsistencies in the reported values for the same given material exist. We report a self-consistent method to quantify both θ_SH and λ_sd of nonmagnetic materials by spin pumping with various ferromagnetic (FM) pumping sources. We characterize the spin-charge conversion for Pt and Pd with various FM combinations using (i) effective spin-mixing conductance, (ii) microwave photoresistance, and (iii) inverse spin Hall effect measurements and find that the pumped spin current suffers an interfacial spin loss (ISL), whose magnitude varies for different interfaces. By properly treating the ISL effect, we obtained consistent values of θ_SH and λ_sd for both Pt and Pd regardless of the ferromagnet used.

Spin currents and spin-orbit torques in ferromagnetic trilayers

Magnetic torques generated through spin-orbit coupling^1-8 promise energy-efficient spintronic devices. For applications, it is important that these torques switch films with perpendicular magnetizations without an external magnetic field^9-14. One suggested approach ¹⁵ to enable such switching uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of the bottom layer. Spin currents generated in the bottom magnetic layer or its interfaces transit the spacer layer and exert a torque on the top magnetization. Here we demonstrate field-free switching in such structures and show that its dependence on the bottom-layer magnetization is not consistent with the anticipated bulk effects ¹⁵ . We describe a mechanism for spin-current generation^16,17 at the interface between the bottom layer and the spacer layer, which gives torques that are consistent with the measured magnetization dependence. This other-layer-generated spin-orbit torque is relevant to energy-efficient control of spintronic devices.

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin-orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin-orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin-orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Spin-orbit torques associated with ferrimagnetic order in Pt/GdFeCo/MgO layers

We investigate spin orbit torque (SOT) efficiencies and magnetic properties of Pt/GdFeCo/MgO multilayers by varying the thicknesses of GdFeCo and MgO layers. Our studies indicate that the ferrimagnetism in the GdFeCo alloy is considerably influenced by both thicknesses due to the diffusion of Gd atoms toward the MgO layer. Comparing to conventional Pt/ferromagnet/MgO structures, the Pt/GdFeCo/MgO exhibits a lower efficiency of SOTs associated with ferrimagnetic order and a similar magnitude of magnetic damping. The previous models that have been developed for rigid ferromagnets are inappropriate to analyze our experimental data, leading to an unphysical consequence of spin transmission larger than unity. Our results imply that the heavy-metal/ferrimagnet system is quite different from heavy-metal/ferromagnet systems in terms of magnetic dynamical modes, spin angular momentum transfer, and relaxation processes.

Current-induced magnetization switching using an electrically insulating spin-torque generator

Current-induced magnetization switching through spin-orbit torques is the fundamental building block of spin-orbitronics, which promises high-performance, low-power memory and logic devices. The spin-orbit torques generally arise from spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero spin-orbit torque is expected because of the broken inversion symmetry; an electrical insulator can be a source of the spin-orbit torques. We demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic material, Pt, turns the heavy metal into an electrically insulating generator of the spin-orbit torques, which enables the electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by insulating oxides. We also show that the spin-orbit torques generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration. These findings open a route toward energy-efficient, voltage-programmable spin-orbit devices based on insulating metal oxides.

Unified treatment of spin torques using a coupled magnetisation dynamics and three-dimensional spin current solver

A three-dimensional spin current solver based on a generalised spin drift-diffusion description, including the bulk and interfacial spin Hall effects, is integrated with a magnetisation dynamics solver. The resulting model is shown to simultaneously reproduce the spin-orbit torques generated using the spin Hall effect, spin pumping torques generated by magnetisation dynamics in multilayers, as well as the spin transfer torques acting on magnetisation regions with spatial gradients, whilst field-like and spin-like torques are reproduced in a spin valve geometry. Two approaches to modelling interfaces are analysed, one based on the spin mixing conductance and the other based on continuity of spin currents where the spin dephasing length governs the absorption of transverse spin components. In both cases analytical formulas are derived for the spin-orbit torques in a heavy metal/ferromagnet bilayer geometry, showing in general both field-like and damping-like torques are generated. The limitations of the analytical approach are discussed, showing that even in a simple bilayer geometry, due to the non-uniformity of the spin currents, a full three-dimensional treatment is required. The model is further applied to the analysis of the spin Hall angle in Pt by reproducing published experimental ferromagnetic resonance data in the bilayer geometry.

Spatially and time-resolved magnetization dynamics driven by spin-orbit torques

Current-induced spin-orbit torques are one of the most effective ways to manipulate the magnetization in spintronic devices, and hold promise for fast switching applications in non-volatile memory and logic units. Here, we report the direct observation of spin-orbit-torque-driven magnetization dynamics in Pt/Co/AlO_x dots during current pulse injection. Time-resolved X-ray images with 25 nm spatial and 100 ps temporal resolution reveal that switching is achieved within the duration of a subnanosecond current pulse by the fast nucleation of an inverted domain at the edge of the dot and propagation of a tilted domain wall across the dot. The nucleation point is deterministic and alternates between the four dot quadrants depending on the sign of the magnetization, current and external field. Our measurements reveal how the magnetic symmetry is broken by the concerted action of the damping-like and field-like spin-orbit torques and the Dzyaloshinskii-Moriya interaction, and show that reproducible switching events can be obtained for over 10¹² reversal cycles.

Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.

Magneto-Optical Detection of the Spin Hall Effect in Pt and W Thin Films

The conversion of charge currents into spin currents in nonmagnetic conductors is a hallmark manifestation of spin-orbit coupling that has important implications for spintronic devices. Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales linearly with current density. By comparing the experimental results with ab initio calculations of the spin Hall and magneto-optical Kerr effects, we quantitatively determine the current-induced spin accumulation at the Pt interface as 5×10^{-12}  μ_{B} A^{-1} cm^{2} per atom. From thickness-dependent measurements, we determine the spin diffusion length in a single Pt film to be 11±3  nm, which is significantly larger compared to that of Pt adjacent to a magnetic layer.

Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

When a current is passed through a non-magnetic metal with strong spin-orbit coupling, an orthogonal spin current is generated. This spin current can be used to switch the magnetization of an adjacent ferromagnetic layer or drive its magnetization into continuous precession. The interface, which is not necessarily sharp, and the crystallographic structure of the nonmagnetic metal can both affect the strength of current-induced spin-orbit torques. Here, we investigate the effects of interface intermixing and film microstructure on spin-orbit torques in perpendicularly magnetized Ta/Co₄₀Fe₄₀B₂₀/MgO trilayers with different Ta layer thickness (5 nm, 10 nm, 15 nm), greater than the spin diffusion length. Effective spin-orbit torques are determined from harmonic Hall voltage measurements performed at temperatures ranging from 20 K to 300 K. We account for the temperature dependence of damping-like and field-like torques by including an additional contribution from the Ta/CoFeB interface in the spin diffusion model. Using this approach, the temperature variations of the spin Hall angle in the Ta underlayer and at the Ta/CoFeB interface are determined separately. Our results indicate an almost temperature-independent spin Hall angle of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{\theta }}}_{{\boldsymbol{SH}}}^{{\boldsymbol{N}}}\approx -{\bf{0.2}}$$\end{document}θSHN≈−0.2 in Ta and a strongly temperature-dependent \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{\theta }}}_{{\boldsymbol{SH}}}^{{\boldsymbol{N}}}$$\end{document}θSHN for the intermixed Ta/CoFeB interface.