1
|
Wang E, Zeng H, Duan W, Huang H. Spontaneous Inversion Symmetry Breaking and Emergence of Berry Curvature and Orbital Magnetization in Topological ZrTe_{5} Films. PHYSICAL REVIEW LETTERS 2024; 132:266802. [PMID: 38996308 DOI: 10.1103/physrevlett.132.266802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/04/2024] [Accepted: 05/21/2024] [Indexed: 07/14/2024]
Abstract
ZrTe_{5} has recently attracted much attention due to the observation of intriguing nonreciprocal transport responses which necessitate the lack of inversion symmetry (I). However, there has been debate on the exact I-asymmetric structure and the underlying I-breaking mechanism. Here, we report a spontaneous I breaking in ZrTe_{5} films, which initiates from interlayer sliding and is stabilized by subtle intralayer distortion. Moreover, we predict significant nonlinear anomalous Hall effect (NAHE) and kinetic magnetoelectric effect (KME), which are attributed to the emergence of Berry curvature and orbital magnetization in the absence of I symmetry. We also explicitly manifest the direct coupling between sliding ferroelectricity, NAHE, and KME based on a sliding-dependent k·p model. By studying the subsurface sliding in ZrTe_{5} multilayers, we speculate that surface nonlinear Hall current and magnetization would emerge on the natural cleavage surface. Our findings elucidate the sliding-induced I-broken mechanism in ZrTe_{5} films and open new avenues for tuning nonreciprocal transport properties in Van der Waals layered materials.
Collapse
Affiliation(s)
| | | | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | | |
Collapse
|
2
|
Xuan F, Lai M, Wu Y, Quek SY. Exciton-Enhanced Spontaneous Parametric Down-Conversion in Two-Dimensional Crystals. PHYSICAL REVIEW LETTERS 2024; 132:246902. [PMID: 38949373 DOI: 10.1103/physrevlett.132.246902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Revised: 07/18/2023] [Accepted: 04/18/2024] [Indexed: 07/02/2024]
Abstract
We show that excitonic resonances and interexciton transitions can enhance the probability of spontaneous parametric down-conversion, a second-order optical response that generates entangled photon pairs. We benchmark our ab initio many-body calculations using experimental polar plots of second harmonic generation in NbOI_{2}, clearly demonstrating the relevance of excitons in the nonlinear response. A strong double-exciton resonance in 2D NbOCl_{2} leads to giant enhancement in the second order susceptibility. Our work paves the way for the realization of efficient ultrathin quantum light sources.
Collapse
Affiliation(s)
- Fengyuan Xuan
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546, Singapore
- Suzhou Laboratory, Suzhou, 215123, China
| | - MingRui Lai
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, 119077, Singapore
| | - Yaze Wu
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
| | - Su Ying Quek
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546, Singapore
- Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, 119077, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| |
Collapse
|
3
|
Liao C, Wang M, Zhao YJ. Enormous and Tunable Bulk Charge/Spin Photovoltaic Effect in Piezoelectric Binary Materials T-IV-VI and T-V-V. J Phys Chem Lett 2024; 15:6099-6107. [PMID: 38820592 DOI: 10.1021/acs.jpclett.4c01257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/02/2024]
Abstract
Understanding the nonlinear response of light and materials is crucial for fundamental physics and next-generation electronic devices. In this work, we have investigated the second-order nonlinear bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) effects in the piezoelectric binary materials T-IV-VI and T-V-V (IV = Ge, Sn; VI = S, Se; and V = P, As, Sb, Bi). The independent nonzero conductivity tensors of charge current are derived for these binaries through the symmetry analysis, along with the mechanism for generating pure spin current. These binaries, with their unique folded structure, exhibit significant charge and spin currents under illumination. Furthermore, we find that strain engineering can effectively modulate charge/spin currents by influencing charge density distribution and built-in electric field due to the piezoelectric effect. Our research suggests that the piezoelectric binary materials possess enormous and tunable charge/spin currents, underscoring their potential for applications in nonlinear flexible optoelectronics and spintronics.
Collapse
Affiliation(s)
- Chengwei Liao
- Department of Physics, South China University of Technology, Guangzhou 510641, China
| | - Minglong Wang
- Department of Physics, South China University of Technology, Guangzhou 510641, China
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510641, China
- Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641, China
| |
Collapse
|
4
|
Lee JE, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son KH, Han DS, Choi JW, Kim YD, Mo SK, Petrovic C, Hwang C, Park SY, Jang C, Ryu H. Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe 4. Nat Commun 2024; 15:3971. [PMID: 38729931 PMCID: PMC11087648 DOI: 10.1038/s41467-024-47643-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 04/08/2024] [Indexed: 05/12/2024] Open
Abstract
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
Collapse
Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Aifeng Wang
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, 400044, China
| | - Shuzhang Chen
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Minseong Kwon
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Dong-Soo Han
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
- Shanghai Advanced Research in Physical Sciences, Shanghai, 201203, China
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea.
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea.
- Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea.
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
| |
Collapse
|
5
|
Kim H, Kim C, Jung Y, Kim N, Son J, Lee GH. In-plane anisotropic two-dimensional materials for twistronics. NANOTECHNOLOGY 2024; 35:262501. [PMID: 38387091 DOI: 10.1088/1361-6528/ad2c53] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 02/22/2024] [Indexed: 02/24/2024]
Abstract
In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
Collapse
Affiliation(s)
- Hangyel Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Changheon Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, United States of America
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, United States of America
| | - Namwon Kim
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
- Ingram School of Engineering, Texas State University, San Marcos, TX 78666, United States of America
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, United States of America
| | - Jangyup Son
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54895, Republic of Korea
- Division of Nano and Information Technology, KIST School University of Science and Technology(UST), Jeonbuk 55324, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
| |
Collapse
|
6
|
Fu Y, Liu Z, Yue S, Zhang K, Wang R, Zhang Z. Optical Second Harmonic Generation of Low-Dimensional Semiconductor Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:662. [PMID: 38668156 PMCID: PMC11054873 DOI: 10.3390/nano14080662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Revised: 04/02/2024] [Accepted: 04/07/2024] [Indexed: 04/29/2024]
Abstract
In recent years, the phenomenon of optical second harmonic generation (SHG) has attracted significant attention as a pivotal nonlinear optical effect in research. Notably, in low-dimensional materials (LDMs), SHG detection has become an instrumental tool for elucidating nonlinear optical properties due to their pronounced second-order susceptibility and distinct electronic structure. This review offers an exhaustive overview of the generation process and experimental configurations for SHG in such materials. It underscores the latest advancements in harnessing SHG as a sensitive probe for investigating the nonlinear optical attributes of these materials, with a particular focus on its pivotal role in unveiling electronic structures, bandgap characteristics, and crystal symmetry. By analyzing SHG signals, researchers can glean invaluable insights into the microscopic properties of these materials. Furthermore, this paper delves into the applications of optical SHG in imaging and time-resolved experiments. Finally, future directions and challenges toward the improvement in the NLO in LDMs are discussed to provide an outlook in this rapidly developing field, offering crucial perspectives for the design and optimization of pertinent devices.
Collapse
Affiliation(s)
- Yue Fu
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
| | - Zhengyan Liu
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Song Yue
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Kunpeng Zhang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
| | - Ran Wang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| | - Zichen Zhang
- Microelectronics Instruments and Equipment R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (Y.F.); (Z.L.); (S.Y.); (K.Z.)
- School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19(A) Yuquan Road, Beijing 100049, China
| |
Collapse
|
7
|
Khanmohammadi S, Kushnir Friedman K, Chen E, Kastuar SM, Ekuma CE, Koski KJ, Titova LV. Tailoring Ultrafast Near-Band Gap Photoconductive Response in GeS by Zero-Valent Cu Intercalation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16445-16452. [PMID: 38528798 DOI: 10.1021/acsami.3c19251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Zero-valent intercalation of atomic metals into the van der Waals gap of layered materials can be used to tune their electronic, optical, thermal, and mechanical properties. Here, we report the impact of intercalating ∼3 atm percent of zero-valent copper into germanium sulfide (GeS). Advanced many-body calculations predict that copper introduces quasi-localized intermediate band states, and time-resolved THz spectroscopy studies demonstrate that those states have prominent effects on the photoconductivity of GeS. Cu-intercalated GeS exhibits a faster rise of transient photoconductivity and a shorter lifetime of optically injected carriers following near-gap excitation with 800 nm pulses. At the same time, Cu intercalation improves free carrier mobility from 1100 to 1300 cm2 V-1 s-1, which we attribute to the damping of acoustic phonons observed in Brillouin scattering and consequent reduction of phonon scattering.
Collapse
Affiliation(s)
- Sepideh Khanmohammadi
- Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, United States
| | - Kateryna Kushnir Friedman
- Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, United States
| | - Ethan Chen
- Department of Chemistry, University of California Davis, Davis, California 95616, United States
| | - Srihari M Kastuar
- Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, United States
| | - Chinedu E Ekuma
- Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, United States
| | - Kristie J Koski
- Department of Chemistry, University of California Davis, Davis, California 95616, United States
| | - Lyubov V Titova
- Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609, United States
| |
Collapse
|
8
|
Han S, Ye L, Li Y, Huang B. Theoretical Understanding of Nonlinear Optical Properties in Solids: A Perspective. J Phys Chem Lett 2024:3323-3335. [PMID: 38498006 DOI: 10.1021/acs.jpclett.4c00360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
Nonlinear optical (NLO) crystals have become a hot topic in chemical science and material physics, due to their essential role in laser technology, optical information, optoelectronics, and precision measurements. In this Perspective, we provide an overview of recent advances in second-order nonlinear optics, with a focus on two critical topics: second harmonic generation (SHG) and the bulk photovoltaic effect (BPVE). For SHG, we discuss recent progress in deep-ultraviolet (DUV) materials, highlighting their structural characteristics and nonlinear groups that contribute to their exceptional performance. For BPVE, we concentrate on the emerging field of low-dimensional materials, emphasizing their potential in a shift current. Additionally, we discuss the development of regulation approaches for NLO materials, which is vital for their practical application. Finally, we address the outlook for the field, including the challenges that must be overcome to further advance NLO materials research.
Collapse
Affiliation(s)
- Shengru Han
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Liangting Ye
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yang Li
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
| |
Collapse
|
9
|
Mortensen JJ, Larsen AH, Kuisma M, Ivanov AV, Taghizadeh A, Peterson A, Haldar A, Dohn AO, Schäfer C, Jónsson EÖ, Hermes ED, Nilsson FA, Kastlunger G, Levi G, Jónsson H, Häkkinen H, Fojt J, Kangsabanik J, Sødequist J, Lehtomäki J, Heske J, Enkovaara J, Winther KT, Dulak M, Melander MM, Ovesen M, Louhivuori M, Walter M, Gjerding M, Lopez-Acevedo O, Erhart P, Warmbier R, Würdemann R, Kaappa S, Latini S, Boland TM, Bligaard T, Skovhus T, Susi T, Maxson T, Rossi T, Chen X, Schmerwitz YLA, Schiøtz J, Olsen T, Jacobsen KW, Thygesen KS. GPAW: An open Python package for electronic structure calculations. J Chem Phys 2024; 160:092503. [PMID: 38450733 DOI: 10.1063/5.0182685] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Accepted: 01/15/2024] [Indexed: 03/08/2024] Open
Abstract
We review the GPAW open-source Python package for electronic structure calculations. GPAW is based on the projector-augmented wave method and can solve the self-consistent density functional theory (DFT) equations using three different wave-function representations, namely real-space grids, plane waves, and numerical atomic orbitals. The three representations are complementary and mutually independent and can be connected by transformations via the real-space grid. This multi-basis feature renders GPAW highly versatile and unique among similar codes. By virtue of its modular structure, the GPAW code constitutes an ideal platform for the implementation of new features and methodologies. Moreover, it is well integrated with the Atomic Simulation Environment (ASE), providing a flexible and dynamic user interface. In addition to ground-state DFT calculations, GPAW supports many-body GW band structures, optical excitations from the Bethe-Salpeter Equation, variational calculations of excited states in molecules and solids via direct optimization, and real-time propagation of the Kohn-Sham equations within time-dependent DFT. A range of more advanced methods to describe magnetic excitations and non-collinear magnetism in solids are also now available. In addition, GPAW can calculate non-linear optical tensors of solids, charged crystal point defects, and much more. Recently, support for graphics processing unit (GPU) acceleration has been achieved with minor modifications to the GPAW code thanks to the CuPy library. We end the review with an outlook, describing some future plans for GPAW.
Collapse
Affiliation(s)
- Jens Jørgen Mortensen
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Ask Hjorth Larsen
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Mikael Kuisma
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Aleksei V Ivanov
- Riverlane Ltd., St Andrews House, 59 St Andrews Street, Cambridge CB2 3BZ, United Kingdom
| | - Alireza Taghizadeh
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Andrew Peterson
- School of Engineering, Brown University, Providence, Rhode Island 02912, USA
| | - Anubhab Haldar
- Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215, USA
| | - Asmus Ougaard Dohn
- Department of Physics, Technical University of Denmark, 2800 Lyngby, Denmark and Science Institute and Faculty of Physical Sciences, VR-III, University of Iceland, Reykjavík 107, Iceland
| | - Christian Schäfer
- Department of Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Elvar Örn Jónsson
- Science Institute and Faculty of Physical Sciences, University of Iceland, VR-III, 107 Reykjavík, Iceland
| | - Eric D Hermes
- Quantum-Si, 29 Business Park Drive, Branford, Connecticut 06405, USA
| | | | - Georg Kastlunger
- CatTheory, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Gianluca Levi
- Science Institute and Faculty of Physical Sciences, University of Iceland, VR-III, 107 Reykjavík, Iceland
| | - Hannes Jónsson
- Science Institute and Faculty of Physical Sciences, University of Iceland, VR-III, 107 Reykjavík, Iceland
| | - Hannu Häkkinen
- Departments of Physics and Chemistry, Nanoscience Center, University of Jyväskylä, FI-40014 Jyväskylä, Finland
| | - Jakub Fojt
- Department of Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Jiban Kangsabanik
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Joachim Sødequist
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Jouko Lehtomäki
- Department of Applied Physics, Aalto University, P.O. Box 11100, 00076 Aalto, Finland
| | - Julian Heske
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Jussi Enkovaara
- CSC-IT Center for Science Ltd., P.O. Box 405, FI-02101 Espoo, Finland
| | - Kirsten Trøstrup Winther
- SUNCAT Center for Interface Science and Catalysis, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Marcin Dulak
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Marko M Melander
- Department of Chemistry, Nanoscience Center, University of Jyväskylä, FI-40014 Jyväskylä, Finland
| | - Martin Ovesen
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Martti Louhivuori
- CSC-IT Center for Science Ltd., P.O. Box 405, FI-02101 Espoo, Finland
| | - Michael Walter
- FIT Freiburg Centre for Interactive Materials and Bioinspired Technologies, University of Freiburg, Georges-Köhler-Allee 105, 79110 Freiburg, Germany
| | - Morten Gjerding
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Olga Lopez-Acevedo
- Biophysics of Tropical Diseases, Max Planck Tandem Group, University of Antioquia UdeA, 050010 Medellin, Colombia
| | - Paul Erhart
- Department of Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Robert Warmbier
- School of Physics and Mandelstam Institute for Theoretical Physics, University of the Witwatersrand, 1 Jan Smuts Avenue, 2001 Johannesburg, South Africa
| | - Rolf Würdemann
- Freiburger Materialforschungszentrum, Universität Freiburg, Stefan-Meier-Straße 21, D-79104 Freiburg, Germany
| | - Sami Kaappa
- Computational Physics Laboratory, Tampere University, P.O. Box 692, FI-33014 Tampere, Finland
| | - Simone Latini
- Nanomade, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Tara Maria Boland
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Thomas Bligaard
- Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800 Lyngby, Denmark
| | - Thorbjørn Skovhus
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Toma Susi
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna, Austria
| | - Tristan Maxson
- Department of Chemical and Biological Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, USA
| | - Tuomas Rossi
- CSC-IT Center for Science Ltd., P.O. Box 405, FI-02101 Espoo, Finland
| | - Xi Chen
- School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu 730000, China
| | | | - Jakob Schiøtz
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Thomas Olsen
- CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | | | | |
Collapse
|
10
|
Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
Collapse
Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
| |
Collapse
|
11
|
Liu JA, Yin L, Liu G. Ferro/Nonferroelectric Vertical Heterostructure Superlattice as a Visible-Light-Responsive Photocatalyst: A DFT Prediction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:7026-7037. [PMID: 38306579 DOI: 10.1021/acsami.3c15068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2024]
Abstract
Developing narrow-band-gap ferroelectric semiconducting photocatalysts is a promising strategy for efficient photocatalytic water splitting with high energy conversion efficiency. Within this context, six ferro/nonferroelectric vertical heterostructure superlattices (VHSs) are constructed in this work by stacking ferroelectric SiS or GeS with nonferroelectric layered organic photocatalysts (C2N, g-C3N4, and melon), layer by layer. The geometry and electronic structures of these six VHSs are systematically investigated by density functional theory calculations. Consequently, four VHSs (SiS/g-C3N4, GeS/C2N, GeS/g-C3N4, and GeS/melon) are predicted to simultaneously possess several important and highly desirable features for photocatalytic water splitting, namely excellent visible-light adsorption, remarkable spontaneous polarization (0.49-0.70 C/m2), spatial charge separation, as well as suitable band-edge positions, thus serving as potential candidates for photocatalytic water splitting to produce hydrogen. This work not only provides a new strategy to use narrow-band-gap ferroelectric semiconductors for photocatalytic water splitting but also offers inspiration for developing photocatalysts with high energy conversion efficiency.
Collapse
Affiliation(s)
- Jian-An Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang 110016, China
| | - Lichang Yin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang 110016, China
| | - Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang 110016, China
| |
Collapse
|
12
|
García-Blázquez MA, Esteve-Paredes JJ, Uría-Álvarez AJ, Palacios JJ. Shift Current with Gaussian Basis Sets and General Prescription for Maximally Symmetric Summations in the Irreducible Brillouin Zone. J Chem Theory Comput 2023; 19:9416-9434. [PMID: 38096495 PMCID: PMC10753807 DOI: 10.1021/acs.jctc.3c00917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 11/20/2023] [Accepted: 11/21/2023] [Indexed: 12/27/2023]
Abstract
The bulk photovoltaic effect is an experimentally verified phenomenon by which a direct charge current is induced within a non-centrosymmetric material by light illumination. Calculations of its intrinsic contribution, the shift current, are nowadays amenable from first-principles employing plane-wave bases. In this work, we present a general method for evaluating the shift conductivity in the framework of localized Gaussian basis sets that can be employed in both the length and velocity gauges, carrying the idiosyncrasies of the quantum-chemistry approach. The (possibly magnetic) symmetry of the system is exploited in order to fold the reciprocal space summations to the representation domain, allowing us to reduce computation time and unveiling the complete symmetry properties of the conductivity tensor under general light polarization.
Collapse
Affiliation(s)
- M. A. García-Blázquez
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - J. J. Esteve-Paredes
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - A. J. Uría-Álvarez
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - J. J. Palacios
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| |
Collapse
|
13
|
Hu C, Naik MH, Chan YH, Ruan J, Louie SG. Light-induced shift current vortex crystals in moiré heterobilayers. Proc Natl Acad Sci U S A 2023; 120:e2314775120. [PMID: 38085781 PMCID: PMC10741382 DOI: 10.1073/pnas.2314775120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Accepted: 11/07/2023] [Indexed: 12/24/2023] Open
Abstract
Transition metal dichalcogenide (TMD) moiré superlattices provide an emerging platform to explore various light-induced phenomena. Recently, the discoveries of novel moiré excitons have attracted great interest. The nonlinear optical responses of these systems are however still underexplored. Here, we report investigation of light-induced shift currents (a second-order response generating DC current from optical illumination) in the WSe2/WS2 moiré superlattice. We identify a striking phenomenon of the formation of shift current vortex crystals-i.e., two-dimensional periodic arrays of moiré-scale current vortices and associated magnetic fields with remarkable intensity under laboratory laser setup. Furthermore, we demonstrate high optical tunability of these current vortices-their location, shape, chirality, and magnitude can be tuned by the frequency, polarization, and intensity of the incident light. Electron-hole interactions (excitonic effects) are found to play a crucial role in the generation and nature of the shift current intensity and distribution. Our findings provide a promising all-optical control route to manipulate nanoscale shift current density distributions and magnetic field patterns, as well as shed light on nonlinear optical responses in moiré quantum matter and their possible applications.
Collapse
Affiliation(s)
- Chen Hu
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Mit H. Naik
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Yang-Hao Chan
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
- Institute of Atomic and Molecular Sciences, Academia Sinica, and Physics Division, National Center for Theoretical Sciences, Taipei10617, Taiwan
| | - Jiawei Ruan
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| | - Steven G. Louie
- Department of Physics, University of California at Berkeley, Berkeley, CA94720
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720
| |
Collapse
|
14
|
Hou C, Shen Y, Xin J, Guo Y, Wang Q. Three-dimensional porous borocarbonitride composed of pentagonal motifs as a high-performance pyroelectric material. Phys Chem Chem Phys 2023; 25:28965-28973. [PMID: 37859546 DOI: 10.1039/d3cp02997b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Pyroelectric materials have been attracting significant attention due to their intrinsic and permanent polarization, where the induced polarization is not associated with specific conditions, such as ferroelectric phase transition, strain gradient, dopants, and electric field. Thus, these materials have great potential for wide applications in energy conversion. Here, we propose a new 3D porous borocarbonitride termed PH-BCN, which is composed of pentagonal motifs with intrinsic polarization along the [0001] direction. Based on first-principles calculations, we show that PH-BCN possesses a record high longitudinal electromechanical coupling coefficient with the value of k33 = 97.99%, a remarkably strong SHG response (χ(2)xzx(0) = χ(2)yzy(0) = χ(2)zxx(0) = χ(2)zyy(0) = -6.23 pm V-1 and χ(2)zzz(0) = 21.21 pm V-1), and a record high shift current value of 908.58 μA V-2 due to the intrinsic vertical polarization. This study expands the family of pentagon-based materials, and may open a new frontier in the design of high-performance pyroelectric materials as well.
Collapse
Affiliation(s)
- Changsheng Hou
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Yiheng Shen
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Jiaqi Xin
- Department of Physics, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Yaguang Guo
- Department of Physics, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| |
Collapse
|
15
|
Aftab S, Shehzad MA, Salman Ajmal HM, Kabir F, Iqbal MZ, Al-Kahtani AA. Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe 2. ACS NANO 2023; 17:17884-17896. [PMID: 37656985 DOI: 10.1021/acsnano.3c03593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe2, caused by the phase transition and broken inversion symmetry in MoTe2. The phase transition from single-crystalline semiconducting 2H-MoTe2 to semimetallic 1T'-MoTe2 was confirmed using X-ray photoelectron spectroscopy (XPS). We used a micrometer-scale system to measure the absorption of energy, which reduced from 800 to 63 meV during phase transformation from hexagonal to distorted octahedral and revealed a smaller bandgap semimetallic behavior. Experimentally, a large bulk photovoltaic response is anticipated with the maximum photovoltage VOC = 16 mV and a positive signal of the ISC = 60 μA (400 nm, 90.4 Wcm-2) in the absence of an external electric field. The maximum values of both R and EQE were found to be 98 mAW-1 and 30%, respectively. Our findings are distinctive features of the photocurrent responses caused by in-plane polarity and its potential from a wide pool of established TMD-based nanomaterials and a cutting-edge approach to optimize the efficiency in converting photons-to-electricity for power harvesting optoelectronics devices.
Collapse
Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, South Korea
| | - Muhammad Arslan Shehzad
- Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Hafiz Muhammad Salman Ajmal
- Department of Biomedical Engineering, Narowal Campus-University of Engineering and Technology, Lahore 54890, Pakistan
| | - Fahmid Kabir
- School of Engineering Science, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa 23640, Pakistan
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia
| |
Collapse
|
16
|
Ye L, Zhou W, Huang D, Jiang X, Guo Q, Cao X, Yan S, Wang X, Jia D, Jiang D, Wang Y, Wu X, Zhang X, Li Y, Lei H, Gou H, Huang B. Manipulation of nonlinear optical responses in layered ferroelectric niobium oxide dihalides. Nat Commun 2023; 14:5911. [PMID: 37737236 PMCID: PMC10516934 DOI: 10.1038/s41467-023-41383-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Accepted: 09/04/2023] [Indexed: 09/23/2023] Open
Abstract
Realization of highly tunable second-order nonlinear optical responses, e.g., second-harmonic generation and bulk photovoltaic effect, is critical for developing modern optical and optoelectronic devices. Recently, the van der Waals niobium oxide dihalides are discovered to exhibit unusually large second-harmonic generation. However, the physical origin and possible tunability of nonlinear optical responses in these materials remain to be unclear. In this article, we reveal that the large second-harmonic generation in NbOX2 (X = Cl, Br, and I) may be partially contributed by the large band nesting effect in different Brillouin zone. Interestingly, the NbOCl2 can exhibit dramatically different strain-dependent bulk photovoltaic effect under different polarized light, originating from the light-polarization-dependent orbital transitions. Importantly, we achieve a reversible ferroelectric-to-antiferroelectric phase transition in NbOCl2 and a reversible ferroelectric-to-paraelectric phase transition in NbOI2 under a certain region of external pressure, accompanied by the greatly tunable nonlinear optical responses but with different microscopic mechanisms. Our study establishes the interesting external-field tunability of NbOX2 for nonlinear optical device applications.
Collapse
Affiliation(s)
- Liangting Ye
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Wenju Zhou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Dajian Huang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Xiao Jiang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Qiangbing Guo
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Xinyu Cao
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Shaohua Yan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Xinyu Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Donghan Jia
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Dequan Jiang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Yonggang Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China
| | - Xiaoqiang Wu
- School of Mechanical Engineering, Chengdu University, Chengdu, 610106, China
| | - Xiao Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Yang Li
- Beijing Computational Science Research Center, Beijing, 100193, China.
| | - Hechang Lei
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing, 100872, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100193, China.
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing, 100193, China.
- Department of Physics, Beijing Normal University, Beijing, 100875, China.
| |
Collapse
|
17
|
Liang Z, Zhou X, Zhang L, Yu XL, Lv Y, Song X, Zhou Y, Wang H, Wang S, Wang T, Shum PP, He Q, Liu Y, Zhu C, Wang L, Chen X. Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures. Nat Commun 2023; 14:4230. [PMID: 37454221 DOI: 10.1038/s41467-023-39995-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 07/07/2023] [Indexed: 07/18/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.
Collapse
Affiliation(s)
- Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
- International Quantum Academy, Shenzhen, China.
| | - Yan Lv
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Perry Ping Shum
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
| |
Collapse
|
18
|
Jiang X, Kang L, Wang J, Huang B. Giant Bulk Electrophotovoltaic Effect in Heteronodal-Line Systems. PHYSICAL REVIEW LETTERS 2023; 130:256902. [PMID: 37418709 DOI: 10.1103/physrevlett.130.256902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 04/27/2023] [Accepted: 05/30/2023] [Indexed: 07/09/2023]
Abstract
The realization of a giant and continuously tunable second-order photocurrent is desired for many nonlinear optical (NLO) and optoelectronic applications, which remains a great challenge. Here, based on a two-band model, we propose a concept of the bulk electrophotovoltaic effect, that is, an out-of-plane external electric field (E_{ext}) that can continuously tune in-plane shift current along with its sign flip in a heteronodal-line (HNL) system. While strong linear optical transition around the nodal loop may potentially generate giant shift current, an E_{ext} can effectively control the radius of the nodal loop, which can continuously modulate the shift-vector components inside and outside the nodal loop holding opposite signs. This concept has been demonstrated in the HNL HSnN/MoS_{2} system using first-principles calculations. The HSnN/MoS_{2} heterobilayer can not only produce a shift-current conductivity with magnitude that is one to two orders larger than other reported systems, but it can also realize a giant bulk electrophotovoltaic effect. Our finding opens new routes to create and manipulate NLO responses in 2D materials.
Collapse
Affiliation(s)
- Xiao Jiang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Kang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
- Beijing Normal University, Beijing 100875, China
| |
Collapse
|
19
|
Sarkar AS, Konidakis I, Gagaoudakis E, Maragkakis GM, Psilodimitrakopoulos S, Katerinopoulou D, Sygellou L, Deligeorgis G, Binas V, Oikonomou IM, Komninou P, Kiriakidis G, Kioseoglou G, Stratakis E. Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2201842. [PMID: 36574469 PMCID: PMC9951343 DOI: 10.1002/advs.202201842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Revised: 11/20/2022] [Indexed: 06/17/2023]
Abstract
Recent advances in atomically thin two dimensional (2D) anisotropic group IVA -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10-3 A W-1 and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.
Collapse
Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - Ioannis Konidakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - E. Gagaoudakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - G. M. Maragkakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - S. Psilodimitrakopoulos
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - D. Katerinopoulou
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - L. Sygellou
- Institute of Chemical Engineering Sciences (ICE‐HT)Foundation of Research and TechnologyHellas, P.O. Box 1414Rio Patras26504Greece
| | - G. Deligeorgis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - Vassilios Binas
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - Ilias M. Oikonomou
- Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
| | - Philomela Komninou
- Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
| | - G. Kiriakidis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - G. Kioseoglou
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of Materials Science and TechnologyUniversity of CreteHeraklion710 03Greece
| | - E. Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| |
Collapse
|
20
|
Tiwari RP. Enhanced shift current bulk photovoltaic effect in ferroelectric Rashba semiconductor α-GeTe: ab initiostudy from three- to two-dimensional van der Waals layered structures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:435404. [PMID: 35985305 DOI: 10.1088/1361-648x/ac8b50] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Accepted: 08/19/2022] [Indexed: 06/15/2023]
Abstract
The ferroelectric Rashba semiconductors (FERSCs) are endowed with a unique combination of ferroelectricity and the spin degree of freedom, resulting in a long carrier lifetime and impressive bulk photovoltaic (BPV) efficiency that reached 25% in organometal halide perovskites. The BPV efficiency can be further improved by using low-dimensional ferroelectrics however, it is inhibited by the ferroelectric instability in low-dimensional perovskites and toxicity along with phase instability of the lead-halide perovskites. To address these challenges, theα-GeTe could be of great importance which is the simplest known lead-free FERSC with an intrinsic layered structure. Therefore, in this work, we investigate the BPV properties of three- to two-dimensional van der Waals structures ofα-GeTe by calculating the shift current (SHC). We predict that the mono (1.56 Å) and bi-layers (5.44-6.14 Å)α-GeTe with the buckled honeycomb structure are dynamically stable and possess the characteristic features of the bulk up to the nanoscale limit. The SHC of ∼70μA V-2is calculated in bulk α-GeTe which is 20 times larger than that obtained in organometal halides in the visible light. The SHC increases with decreasing the number of layers, reaching a maximum amplitude of ∼300μA V-2at 2.67 eV in the monolayer which is more than double that obtained in monolayer GeS. We find that the SHC in monolayer α-GeTe can be further enhanced and redshifted by applying a compressive strain; which is correlated with the strong absorption of thexx-polarized light, stimulated by the more delocalized px/yorbital character of the density of states. Furthermore, in the bilayer structures, the magnitude of the SHC is sensitive to the layers' stacking arrangement and a maximum SHC (∼250μA V-2) can be achieved with an AB-type stacking arrangement. Combining these results with the benefits of being environmental-friendly material makesα-GeTe a good candidate for next-generation solar cells application.
Collapse
|
21
|
Liu J, Zhang X, Wang J, Gu L, Chu PK, Yu XF. Global Structure Search for New 2D PtSSe Allotropes and Their Potential for Thermoelectirc and Piezoelectric applications. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
|
22
|
Deng ZY, Feng HJ. Real-time first-principles calculations of ultrafast carrier dynamics of SnSe/TiO 2heterojunction under Li +implantation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:355001. [PMID: 35709706 DOI: 10.1088/1361-648x/ac7997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2022] [Accepted: 06/16/2022] [Indexed: 06/15/2023]
Abstract
Ion implantation has been widely used in biomaterials, alloys, and semiconductors modification. Basing on the studying of trapping states in the equilibrium state, we investigate the ultrafast carrier dynamics of SnSe/TiO2and SnSe/Li/TiO2heterojunctions under Li+implantation by the real-time time-dependent density functional theory. The special type II band alignment and Li+interfacial states in SnSe/TiO2heterojunction effectively facilitate the exciton dissociation in a benign process and suppresses the interfacial nonradiative recombination. By monitoring the instantaneous ion-solid interaction energy, electronic stropping power and the excitation electron evolution, we find that atomic reconstruction introduced by the Li inserting layer changes the charge density and crystal potential field in the injection channel, and thus weakens the violent oscillation force and electron excitation on the Ti and O atoms. There exists a weaker and shorter charge excitation at the interface for SnSe/Li/TiO2implantation system, which suggests that the Li ion layer weakens the e-ph coupling between the interface electrons and the moving ion. Meanwhile, only the hot electrons are produced in the interface region, reducing the probability of carrier recombination. These results provide an understanding for the behavior of carriers in SnSe based heterojunctions and the electron-phonon coupling mechanism at the phase/grain boundary under ion implantation.
Collapse
Affiliation(s)
- Zun-Yi Deng
- School of Physics, Northwest University, Xi'an 710127, People's Republic of China
| | - Hong-Jian Feng
- School of Physics, Northwest University, Xi'an 710127, People's Republic of China
| |
Collapse
|
23
|
Kaner NT, Wei Y, Raza A, Li W, Jiang Y, Tian WQ. Colossal In-Plane and Out-of-Plane Shift Photocurrents in Single-Layer Two-Dimensional α-Antimonide Phosphorus. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23348-23354. [PMID: 35575692 DOI: 10.1021/acsami.2c01530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
For materials lacking inversion symmetries, an interband transition induced by a photon may result in excited electrons (holes) experiencing a spatial shift leading to generation of directional photocurrents. This phenomenon known as bulk photovoltaic effect (BPVE) shift photocurrent (SPC) has recently attracted immense attention owing to its potential in generating photovoltages that are not restricted by Shockley-Queisser limitations imposed by materials' electronic band gaps. The BPVE was recently reformulated in a quantum mechanics viewpoint as the change in the geometrical phase upon photoexcitation and can now be promptly calculated from Bloch wave functions generated by first-principles calculations. The SPC of an electron (hole) is robust against crystal defects and impurities both in the interior and the surface and can be less dissipative and ultrafast. Herein, an emergence of colossal SPC in a pristine two-dimensional (2D) single-layer α-SbP crystal is predicted from first-principles calculations. An external electric field is further applied on the 2D crystal, and a large SPC enhancement is achieved. The locations of the SPC peaks due to both in-plane and out-of-plane responses suggest that α-SbP can generate a large photocurrent both in visible-light and ultraviolet regions. Single-layer 2D α-SbP is thus an excellent material for strong SPC. This finding is thus expected to open a pathway to exploring efficient photovoltaic devices based on monolayer α-SbP and similar materials.
Collapse
Affiliation(s)
| | - Yadong Wei
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Technology Innovation Center of Materials and Devices at Extreme Environment, Harbin 150001, China
| | - Ali Raza
- Department of Physics, University of Sialkot (USKT), 1-Km Main Daska Road, Sialkot 51040, Punjab, Pakistan
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Technology Innovation Center of Materials and Devices at Extreme Environment, Harbin 150001, China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi'an 710024, China
| | - YongYuan Jiang
- School of Physics, Harbin Institute of Technology, Harbin 150001, China
- Key Lab of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin 150001, China
- Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Harbin 150001, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Wei Quan Tian
- Chongqing Key Laboratory of Theoretical and Computational Chemistry, School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China
| |
Collapse
|
24
|
Kaner NT, Wei Y, Ying T, Xu X, Li W, Raza A, Li X, Yang J, Jiang Y, Tian WQ. Giant Shift Photovoltaic Current in Group V‐V Binary Nanosheets. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
| | - Yadong Wei
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Tao Ying
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Xiaodong Xu
- School of Physics Harbin Institute of Technology Harbin 150001 China
| | - Weiqi Li
- School of Physics Harbin Institute of Technology Harbin 150001 China
- State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Xi'an 710024 China
| | - Ali Raza
- Department of Physics University of Sialkot (USKT) 1‐Km Main Daska Road Sialkot Punjab 51040 Pakistan
| | - Xingji Li
- School of Material Science and Engineering Harbin Institute of Technology Harbin 150001 China
| | - Jianqun Yang
- School of Material Science and Engineering Harbin Institute of Technology Harbin 150001 China
| | - YongYuan Jiang
- School of Physics Harbin Institute of Technology Harbin 150001 China
- Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China
- Key Lab of Micro‐Optics and Photonic Technology of Heilongjiang Province Harbin 150001 China
| | - Wei Quan Tian
- Chongqing Key Laboratory of Theoretical and Computational Chemistry School of Chemistry and Chemical Engineering Chongqing University Chongqing 401331 China
| |
Collapse
|
25
|
Zheng YJ, Zhang Q, Odunmbaku O, Ou Z, Li M, Sun K. Tuning the carrier type and density of monolayer tin selenide via organic molecular doping. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:085001. [PMID: 34736236 DOI: 10.1088/1361-648x/ac3691] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2021] [Accepted: 11/04/2021] [Indexed: 06/13/2023]
Abstract
Utilizing first-principles calculations, charge transfer doping process of single layer tin selenide (SL-SnSe) via the surface adsorption of various organic molecules was investigated. Effective p-type SnSe, with carrier concentration exceeding 3.59 × 1013 cm-2, was obtained upon adsorption of tetracyanoquinodimethane or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane on SL-SnSe due to their lowest unoccupied molecular orbitals acting as shallow acceptor states. While we could not obtain effective n-type SnSe through adsorption of tetrathiafulvalene (TTF) or 1,4,5,8-tetrathianaphthalene on pristine SnSe due to their highest occupied molecular orbitals (HOMO) being far from the conduction band edge of SnSe, this disadvantageous situation can be amended by the introduction of an external electric field perpendicular to the monolayer surface. It is found that Snvacwill facilitate charge transfer from TTF to SnSe through introducing an unoccupied gap state just above the HOMO of TTF, thereby partially compensating for the p-type doping effect of Snvac. Our results show that both effective p-type and n-type SnSe can be obtained and tuned by charge transfer doping, which is necessary to promote its applications in nanoelectronics, thermoelectrics and optoelectronics.
Collapse
Affiliation(s)
- Yu Jie Zheng
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Qi Zhang
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Omololu Odunmbaku
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Zeping Ou
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Meng Li
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Kuan Sun
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems of the Ministry of Education of China, Chongqing University, Chongqing 400044, People's Republic of China
- School of Energy and Power Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| |
Collapse
|
26
|
Yan Y, Deng Q, Li S, Guo T, Li X, Jiang Y, Song X, Huang W, Yang J, Xia C. In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes. NANOSCALE 2021; 13:16122-16130. [PMID: 34533169 DOI: 10.1039/d1nr03807a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional ferroelectric semiconductors (2DFeSs) have been attracting extensive research attention on account of their unique properties and versatile applications in random-access memory, digital signal processors, and neuromorphic computing. Germanium sulfide (GeS) is predicted as a typical 2DFeS with a large spontaneous polarization of 484 pC m-1. Furthermore, the moderate band gap equivalent to 1.63 eV of GeS provides it with significant potential to create a strong bulk photovoltage in the visible light range. However, the fabrication of chemically stable few-to-monolayer GeS has not been reported so far, owing to the strong interlayer force and high chemical reactivity of the surface. Herein we demonstrate a new method for fabricating high quality, air-stable, ultrathin GeS nanoflakes. The electrical characterization confirms the formation of few-layered GeS with a remarkable in-plane ferroelectric hysteresis, which is forbidden by the inversion symmetry in bulk GeS crystals. After applying a coercive field of about 18.1 kV cm-1, a switchable shift current can also be observed in the polarized GeS nanoflakes under light irradiation. To further enhance the photoresponsivity, few-layered InSe was transferred onto the GeS nanoflakes to form van der Waals ferroelectric diodes. The interfacial perturbation breaking the inversion symmetry results in the enhancement of robust dipoles in the GeS side along the interface, which can be tuned by the in-plane electric field. Overall, this work opens the door for exploring the low-dimensional ferroelectric memory and energy conversion applications based on 2D GeS nanoflakes and provides a deeper understanding of the photovoltaic mechanism with in-plane 2D ferroelectric diodes.
Collapse
Affiliation(s)
- Yong Yan
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Qunrui Deng
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Shasha Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3Ga, Canada
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| | - Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 2a0023, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
| |
Collapse
|
27
|
Kaneko T, Sun Z, Murakami Y, Golež D, Millis AJ. Bulk Photovoltaic Effect Driven by Collective Excitations in a Correlated Insulator. PHYSICAL REVIEW LETTERS 2021; 127:127402. [PMID: 34597083 DOI: 10.1103/physrevlett.127.127402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Accepted: 08/10/2021] [Indexed: 06/13/2023]
Abstract
We investigate the bulk photovoltaic effect, which rectifies light into electric current, in a collective quantum state with correlation driven electronic ferroelectricity. We show via explicit real-time dynamical calculations that the effect of the applied electric field on the electronic order parameter leads to a strong enhancement of the bulk photovoltaic effect relative to the values obtained in a conventional insulator. The enhancements include both resonant enhancements at sub-band-gap frequencies, arising from excitation of optically active collective modes, and broadband enhancements arising from nonresonant deformations of the electronic order. The deformable electronic order parameter produces an injection current contribution to the bulk photovoltaic effect that is entirely absent in a rigid-band approximation to a time-reversal symmetric material. Our findings establish that correlation effects can lead to the bulk photovoltaic effect and demonstrate that the collective behavior of ordered states can yield large nonlinear optical responses.
Collapse
Affiliation(s)
- Tatsuya Kaneko
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - Zhiyuan Sun
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - Yuta Murakami
- Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
| | - Denis Golež
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, USA
- Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000 Ljubljana, Slovenia
- Jozef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, New York 10027, USA
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, USA
| |
Collapse
|
28
|
Matsyshyn O, Piazza F, Moessner R, Sodemann I. Rabi Regime of Current Rectification in Solids. PHYSICAL REVIEW LETTERS 2021; 127:126604. [PMID: 34597109 DOI: 10.1103/physrevlett.127.126604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Revised: 06/29/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
We investigate rectified currents in response to oscillating electric fields in systems lacking inversion and time-reversal symmetries. These currents, in second-order perturbation theory, are inversely proportional to the relaxation rate, and, therefore, naively diverge in the ideal clean limit. Employing a combination of the nonequilibrium Green function technique and Floquet theory, we show that this is an artifact of perturbation theory, and that there is a well-defined periodic steady state akin to Rabi oscillations leading to finite rectified currents in the limit of weak coupling to a thermal bath. In this Rabi regime the rectified current scales as the square root of the radiation intensity, in contrast with the linear scaling of the perturbative regime, allowing us to readily diagnose it in experiments. More generally, our description provides a smooth interpolation from the ideal periodic Gibbs ensemble describing the Rabi oscillations of a closed system to the perturbative regime of rapid relaxation due to strong coupling to a thermal bath.
Collapse
Affiliation(s)
- Oles Matsyshyn
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Francesco Piazza
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Roderich Moessner
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Inti Sodemann
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
- Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
- Institut für Theoretische Physik, Universität Leipzig, D-04103 Leipzig, Germany
| |
Collapse
|
29
|
Wang B, Tang M, Lou H, Li F, Bergara A, Yang G. Wide Band Gap P 3S Monolayer with Anisotropic and Ultrahigh Carrier Mobility. J Phys Chem Lett 2021; 12:8481-8488. [PMID: 34450014 DOI: 10.1021/acs.jpclett.1c02363] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Phosphorene has offered an additional advantage for developing new optoelectronic devices due to its anisotropic and high carrier mobility. However, its instability in air causes a rapid degradation of the performance of the device. Thus, improving the stability of phosphorene while maintaining its original properties has become the key to the development of high-performance electronic devices. Herein, we propose that the formation of two-dimensional (2D) P-rich P-S compounds could achieve this goal. First-principles swarm-structural searches revealed two previously unkonwn P3S and P2S monolayers. The P3S monolayer, consisting of n-bicyclo-P6 units along the armchair direction, exhibits anisotropic and wide band gap characteristics. Interestingly, its carrier mobility reaches 1.11 × 104 cm2 V-1 s-1 and is much higher than in phosphorene. Its electronic band gap and optical absorption coefficients in the ultraviolet region reach 2.71 eV and 105 cm-1, respectively. Additionally, the P3S monolayer has a high structural stability and resistance to air oxidation.
Collapse
Affiliation(s)
- Bo Wang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Meng Tang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Huan Lou
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Fei Li
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Aitor Bergara
- Departamento de Física, Universidad del País Vasco-Euskal Herriko Unibertsitatea, UPV/EHU, 48080 Bilbao, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| |
Collapse
|
30
|
Tiwari RP, Birajdar B, Ghosh RK. Intrinsic ferroelectricity and large bulk photovoltaic effect in novel two-dimensional buckled honeycomb-like lattice of NbP: first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:385302. [PMID: 34229302 DOI: 10.1088/1361-648x/ac117f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Accepted: 07/06/2021] [Indexed: 06/13/2023]
Abstract
Using first-principles calculations, we predict that the two-dimensional (2D) monolayers of NbP with the buckled honeycomb-like and puckered tetragonal structure can be obtained from the (110) and (001) orientations, respectively, of its bulk crystal structure. The electronic properties of these monolayers are spectacularly different as tetragonal lattice is metallic whereas the honeycomb-like lattice (h-NbP) is a semiconductor and exhibits intrinsic ferroelectricity originating from a raresd2-sp2hybridization. The shift current bulk photovoltaic effect (BPVE) is systematically investigated in the h-NbP monolayer (1.21 Å thickness) using the Wannier interpolation method. Strong absorption of visible light at ∼2 eV and a large 3D shift current of ∼180μA V-2is obtained which is attributed to the partial delocalization of Bloch states due tosd2-sp2hybridization. We compare the shift current response of h-NbP monolayer with that of some previously reported bulk ferroelectrics and 2D monolayers, suggesting that h-NbP monolayer can yield a large shift current at an ultimate thickness and is a promising 2D material for the BPVE application under the visible light. Strain effect is also investigated, revealing that the h-NbP monolayer is dynamically stable up to a strain limit of ±3%, and the shift current increases by ∼9% at a compressive strain of -3% as the Bloch states are more delocalized due to the strengthening ofsd2-sp2hybridization. The results presented in this study can pave the paths to fabricate the 2D monolayered structures of NbP, and realize the BPVE based next-generation solar cells of h-NbP monolayer.
Collapse
Affiliation(s)
- Rajender Prasad Tiwari
- Special Center for Nano Sciences, Jawaharlal Nehru University, New Delhi 110067, India
- Asia Pacific Center for Theoretical Physics, Pohang, 37673, Republic of Korea
| | - Balaji Birajdar
- Special Center for Nano Sciences, Jawaharlal Nehru University, New Delhi 110067, India
| | - Ram Krishna Ghosh
- Special Center for Nano Sciences, Jawaharlal Nehru University, New Delhi 110067, India
| |
Collapse
|
31
|
Chan YH, Qiu DY, da Jornada FH, Louie SG. Giant exciton-enhanced shift currents and direct current conduction with subbandgap photo excitations produced by many-electron interactions. Proc Natl Acad Sci U S A 2021; 118:e1906938118. [PMID: 34155136 PMCID: PMC8237677 DOI: 10.1073/pnas.1906938118] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Shift current is a direct current generated from nonlinear light-matter interaction in a noncentrosymmetric crystal and is considered a promising candidate for next-generation photovoltaic devices. The mechanism for shift currents in real materials is, however, still not well understood, especially if electron-hole interactions are included. Here, we employ a first-principles interacting Green's-function approach on the Keldysh contour with real-time propagation to study photocurrents generated by nonlinear optical processes under continuous wave illumination in real materials. We demonstrate a strong direct current shift current at subbandgap excitation frequencies in monolayer GeS due to strongly bound excitons, as well as a giant excitonic enhancement in the shift current coefficients at above bandgap photon frequencies. Our results suggest that atomically thin two-dimensional materials may be promising building blocks for next-generation shift current devices.
Collapse
Affiliation(s)
- Yang-Hao Chan
- Department of Physics, University of California, Berkeley, CA 94720-7300
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan
| | - Diana Y Qiu
- Department of Physics, University of California, Berkeley, CA 94720-7300
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
| | - Felipe H da Jornada
- Department of Physics, University of California, Berkeley, CA 94720-7300
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
| | - Steven G Louie
- Department of Physics, University of California, Berkeley, CA 94720-7300;
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
| |
Collapse
|
32
|
Shi LK, Zhang D, Chang K, Song JCW. Geometric Photon-Drag Effect and Nonlinear Shift Current in Centrosymmetric Crystals. PHYSICAL REVIEW LETTERS 2021; 126:197402. [PMID: 34047609 DOI: 10.1103/physrevlett.126.197402] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2020] [Accepted: 03/22/2021] [Indexed: 06/12/2023]
Abstract
The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a nonzero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a "shift current dipole" (a geometric quantity characterizing interband transitions) and manifests a purely transverse response in centrosymmetric crystals. This transverse nature proceeds directly from the shift-vector's pseudovector nature under mirror operation and underscores its intrinsic geometric origin. Photon-drag shift current can be greatly enhanced by coupling to polaritons and provides a new and sensitive tool to interrogate the subtle interband coherences of materials with inversion symmetry previously thought to be inaccessible via photocurrent probes.
Collapse
Affiliation(s)
- Li-Kun Shi
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Republic of Singapore
- Max Planck Institute for the Physics of Complex Systems, 01187 Dresden, Germany
| | - Dong Zhang
- SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Kai Chang
- SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Justin C W Song
- Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371, Republic of Singapore
- Institute of High Performance Computing, Agency for Science, Technology, & Research, Singapore 138632, Republic of Singapore
| |
Collapse
|
33
|
Dai Z, Schankler AM, Gao L, Tan LZ, Rappe AM. Phonon-Assisted Ballistic Current from First-Principles Calculations. PHYSICAL REVIEW LETTERS 2021; 126:177403. [PMID: 33988454 DOI: 10.1103/physrevlett.126.177403] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Accepted: 03/19/2021] [Indexed: 05/10/2023]
Abstract
The bulk photovoltaic effect (BPVE) refers to current generation due to illumination by light in a homogeneous bulk material lacking inversion symmetry. In addition to the intensively studied shift current, the ballistic current, which originates from asymmetric carrier generation due to scattering processes, also constitutes an important contribution to the overall kinetic model of the BPVE. In this Letter, we use a perturbative approach to derive a formula for the ballistic current resulting from the intrinsic electron-phonon scattering in a form amenable to first-principles calculation. We then implement the theory and calculate the ballistic current of the prototypical BPVE material BaTiO_{3} using quantum-mechanical density functional theory. The magnitude of the ballistic current is comparable to that of the shift current, and the total spectrum (shift plus ballistic) agrees well with the experimentally measured photocurrents. Furthermore, we show that the ballistic current is sensitive to structural change, which could benefit future photovoltaic materials design.
Collapse
Affiliation(s)
- Zhenbang Dai
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| | - Liang Z Tan
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA
| |
Collapse
|
34
|
Akamatsu T, Ideue T, Zhou L, Dong Y, Kitamura S, Yoshii M, Yang D, Onga M, Nakagawa Y, Watanabe K, Taniguchi T, Laurienzo J, Huang J, Ye Z, Morimoto T, Yuan H, Iwasa Y. A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect. Science 2021; 372:68-72. [PMID: 33795452 DOI: 10.1126/science.aaz9146] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2019] [Revised: 12/14/2020] [Accepted: 02/18/2021] [Indexed: 01/12/2023]
Abstract
Van der Waals interfaces can be formed by layer stacking without regard to lattice constants or symmetries of individual building blocks. We engineered the symmetry of a van der Waals interface of tungsten selenide and black phosphorus and realized in-plane electronic polarization that led to the emergence of a spontaneous photovoltaic effect. Spontaneous photocurrent was observed along the polar direction and was absent in the direction perpendicular to it. The observed spontaneous photocurrent was explained by a quantum-mechanical shift current that reflects the geometrical and topological electronic nature of this emergent interface. The present results offer a simple guideline for symmetry engineering that is applicable to a variety of van der Waals interfaces.
Collapse
Affiliation(s)
- Takatoshi Akamatsu
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.
| | - Ling Zhou
- College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China
| | - Yu Dong
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Sota Kitamura
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Mao Yoshii
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada.,Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Masaru Onga
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yuji Nakagawa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Joseph Laurienzo
- Department of Physics, Case Western Reserve University, Cleveland, OH, USA
| | - Junwei Huang
- College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC V6T 1Z1, Canada.,Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada
| | - Takahiro Morimoto
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Hongtao Yuan
- College of Engineering and Applied Sciences and National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.,RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| |
Collapse
|
35
|
Bravo S, Pacheco M, Nuñez V, Correa JD, Chico L. Two-dimensional Weyl points and nodal lines in pentagonal materials and their optical response. NANOSCALE 2021; 13:6117-6128. [PMID: 33885603 DOI: 10.1039/d1nr00064k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional pentagonal structures based on the Cairo tiling are the basis of a family of layered materials with appealing physical properties. In this work we present a theoretical study of the symmetry-based electronic and optical properties of these pentagonal materials. We provide a complete classification of the space groups that support pentagonal structures for binary and ternary systems. By means of first-principles calculations, the electronic band structures and the local spin textures in momentum space are analyzed for four examples of these materials, namely, PdSeTe, PdSeS, InP5 and GeBi2, all of which are dynamically stable. Our results show that pentagonal structures can be realized in chiral and achiral lattices with Weyl nodes pinned at high-symmetry points and nodal lines along the Brillouin zone boundary; these degeneracies are protected by the combined action of crystalline and time-reversal symmetries. Additionally, we computed the linear and nonlinear optical features of the proposed pentagonal materials and discuss some particular features such as the shift current, which shows an enhancement due to the presence of nodal lines and points, and their possible applications.
Collapse
Affiliation(s)
- Sergio Bravo
- Departamento de Física, Universidad Técnica Federico Santa María, Valparaíso, Chile
| | | | | | | | | |
Collapse
|
36
|
Schankler AM, Gao L, Rappe AM. Large Bulk Piezophotovoltaic Effect of Monolayer 2 H-MoS 2. J Phys Chem Lett 2021; 12:1244-1249. [PMID: 33497221 DOI: 10.1021/acs.jpclett.0c03503] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition-metal dichalcogenide MoS2. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer 2H-MoS2 that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method for engineering the shift current response of materials to augment previously reported methods using mechanical strain.
Collapse
Affiliation(s)
- Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Lingyuan Gao
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, United States
| |
Collapse
|
37
|
Giant topological longitudinal circular photo-galvanic effect in the chiral multifold semimetal CoSi. Nat Commun 2021; 12:154. [PMID: 33420054 PMCID: PMC7794406 DOI: 10.1038/s41467-020-20408-5] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Accepted: 12/02/2020] [Indexed: 11/08/2022] Open
Abstract
The absence of mirror symmetry, or chirality, is behind striking natural phenomena found in systems as diverse as DNA and crystalline solids. A remarkable example occurs when chiral semimetals with topologically protected band degeneracies are illuminated with circularly polarized light. Under the right conditions, the part of the generated photocurrent that switches sign upon reversal of the light's polarization, known as the circular photo-galvanic effect, is predicted to depend only on fundamental constants. The conditions to observe quantization are non-universal, and depend on material parameters and the incident frequency. In this work, we perform terahertz emission spectroscopy with tunable photon energy from 0.2 -1.1 eV in the chiral topological semimetal CoSi. We identify a large longitudinal photocurrent peaked at 0.4 eV reaching ~550 μ A/V2, which is much larger than the photocurrent in any chiral crystal reported in the literature. Using first-principles calculations we establish that the peak originates only from topological band crossings, reaching 3.3 ± 0.3 in units of the quantization constant. Our calculations indicate that the quantized circular photo-galvanic effect is within reach in CoSi upon doping and increase of the hot-carrier lifetime. The large photo-conductivity suggests that topological semimetals could potentially be used as novel mid-infrared detectors.
Collapse
|
38
|
Wei J, Li Y, Wang L, Liao W, Dong B, Xu C, Zhu C, Ang KW, Qiu CW, Lee C. Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection. Nat Commun 2020; 11:6404. [PMID: 33335090 PMCID: PMC7747747 DOI: 10.1038/s41467-020-20115-1] [Citation(s) in RCA: 46] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2020] [Accepted: 11/16/2020] [Indexed: 01/27/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in the efficiency of existing opto-electronic devices. However, the implementation of BPVE has been limited to the naturally existing materials with broken inversion symmetry, such as ferroelectrics, which suffer low efficiencies. Here, we propose metasurface-mediated graphene photodetectors with cascaded polarization-sensitive photoresponse under uniform illumination, mimicking an artificial BPVE. With the assistance of non-centrosymmetric metallic nanoantennas, the hot photocarriers in graphene gain a momentum upon their excitation and form a shift current which is nonlocal and directional. Thereafter, we demonstrate zero-bias uncooled mid-infrared photodetectors with three orders higher responsivity than conventional BPVE and a noise equivalent power of 0.12 nW Hz−1/2. Besides, we observe a vectorial photoresponse which allows us to detect the polarization angle of incident light with a single device. Our strategy opens up alternative possibilities for scalable, low-cost, multifunctional infrared photodetectors. Here, graphene-based plasmonic metamaterials are used to generate an artificial bulk photovoltaic effect, enabling the realization of mid-infrared photodetectors with enhanced responsivity and calibration-free polarization detection at room temperature.
Collapse
Affiliation(s)
- Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Ying Li
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lin Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Wugang Liao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Chunxiang Zhu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore. .,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore.
| |
Collapse
|
39
|
Kim B, Kim J, Park N. First-principles identification of the charge-shifting mechanism and ferroelectricity in hybrid halide perovskites. Sci Rep 2020; 10:19635. [PMID: 33184384 PMCID: PMC7665211 DOI: 10.1038/s41598-020-76742-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2020] [Accepted: 10/22/2020] [Indexed: 11/09/2022] Open
Abstract
Hybrid halide perovskite solar cells have recently attracted substantial attention, mainly because of their high power conversion efficiency. Among diverse variants, (CH3NH3)PbI3 and HC(NH2)2PbI3 are particularly promising candidates because their bandgap well matches the energy range of visible light. Here, we demonstrate that the large nonlinear photocurrent in β-(CH3NH3)PbI3 and α-HC(NH2)2PbI3 is mostly determined by the intrinsic electronic band properties near the Fermi level, rooted in the inorganic backbone, whereas the ferroelectric polarization of the hybrid halide perovskite is largely dominated by the ionic contribution of the molecular cation. The spatial charge shift upon excitation is attributed to the charge transfer from iodine to lead atoms in the backbone, which is independent of the presence of the cationic molecules. Our findings can serve as a guiding principle for the design of future materials for halide-perovskite solar cells with further enhanced photovoltaic performance.
Collapse
Affiliation(s)
- Bumseop Kim
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Korea
| | - Jeongwoo Kim
- Department of Physics, Incheon National University, Incheon, 406-772, Korea.
| | - Noejung Park
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, 689-798, Korea.
| |
Collapse
|
40
|
Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
Collapse
Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
| |
Collapse
|
41
|
Hatada H, Nakamura M, Sotome M, Kaneko Y, Ogawa N, Morimoto T, Tokura Y, Kawasaki M. Defect tolerant zero-bias topological photocurrent in a ferroelectric semiconductor. Proc Natl Acad Sci U S A 2020; 117:20411-20415. [PMID: 32778597 PMCID: PMC7456187 DOI: 10.1073/pnas.2007002117] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Lattice defect is a major cause of energy dissipation in conventional electric current due to the drift and diffusion motions of electrons. Different nature of current emerges when noncentrosymmetric materials are excited by light. This current, called the shift current, originates from the change in the Berry connection of electrons' wave functions during the interband optical transition. Here, we demonstrate the defect tolerance of shift current using single crystals of ferroelectric semiconductor antimony sulfoiodide (SbSI). Although the dark conductance spreads over several orders of magnitude in each crystal due to the difference in the density of defect levels, the observed shift current converges to an identical value. We also reveal that the shift current is scarcely disturbed by the surface defects while they drastically suppress the conventional photocurrent. The defect tolerance is a manifestation of the topological nature of shift current, which will be a crucial advantage in optoelectronic applications.
Collapse
Affiliation(s)
- Hiroki Hatada
- Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
| | - Masao Nakamura
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan;
- PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
| | - Masato Sotome
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan
| | - Yoshio Kaneko
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan
| | - Naoki Ogawa
- Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
| | - Takahiro Morimoto
- Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
| | - Yoshinori Tokura
- Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan
- Quantum-Phase Electronics Center, University of Tokyo, Tokyo 113-8656, Japan
- Tokyo College, University of Tokyo, Tokyo 113-8656, Japan
| | - Masashi Kawasaki
- Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan
- Quantum-Phase Electronics Center, University of Tokyo, Tokyo 113-8656, Japan
| |
Collapse
|
42
|
Kaner N, Wei Y, Jiang Y, Li W, Xu X, Pang K, Li X, Yang J, Jiang Y, Zhang G, Tian WQ. Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering. ACS OMEGA 2020; 5:17207-17214. [PMID: 32715206 PMCID: PMC7376894 DOI: 10.1021/acsomega.0c01319] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Accepted: 06/22/2020] [Indexed: 06/11/2023]
Abstract
Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shift currents in monolayer two-dimensional (2D) GeS and SnS has systematically been investigated using the first-principles calculations. The conduction bands of those materials are more responsive to strain than the valence bands. Increased equibiaxial compressive strain leads to a drastic reduction in the band gap and finally the occurrence of phase transition from semiconductor to metal at strains of -15 and -14% for GeS and SnS, respectively. On the other hand, tensile equibiaxial strain increases the band gap slightly. Similarly, increased equibiaxial compressive strain leads to a steady almost four times increase in the shift currents at a strain of -12% with direction change occurring at -8% strain. However, at phase transition from semiconductor to metal, the shift currents of the two materials completely vanish. Equibiaxial tensile strain also leads to increased shift currents. For SnS, shift currents do not change direction, just as the case of GeS at low strain; however, at a strain of +8% and beyond, direction reversal of shift currents beyond the band gap in GeS occur.
Collapse
Affiliation(s)
| | - Yadong Wei
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yingjie Jiang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Weiqi Li
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xiaodong Xu
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Kaijuan Pang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xingji Li
- Materials
Science and Engineering, Harbin Institute
of Technology, Harbin 150001, China
| | - Jianqun Yang
- Materials
Science and Engineering, Harbin Institute
of Technology, Harbin 150001, China
| | - YongYuan Jiang
- School
of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Guiling Zhang
- School
of Materials Science and Engineering, Harbin
University of Science and Technology, Harbin 150080, China
| | - Wei Quan Tian
- Chongqing
Key Laboratory of Theoretical and Computational Chemistry, College
of Chemistry and Chemical Engineering, Chongqing
University, Huxi Campus, Chongqing 401331, China
| |
Collapse
|
43
|
Wang Q, Zhou C, Chai Y. Breaking symmetry in device design for self-driven 2D material based photodetectors. NANOSCALE 2020; 12:8109-8118. [PMID: 32236235 DOI: 10.1039/d0nr01326a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronic applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on a self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D material based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunctions, and PN heterostructures. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
Collapse
Affiliation(s)
- Qi Wang
- South China University of Technology, Guangzhou, China.
| | | | | |
Collapse
|
44
|
Pizzi G, Vitale V, Arita R, Blügel S, Freimuth F, Géranton G, Gibertini M, Gresch D, Johnson C, Koretsune T, Ibañez-Azpiroz J, Lee H, Lihm JM, Marchand D, Marrazzo A, Mokrousov Y, Mustafa JI, Nohara Y, Nomura Y, Paulatto L, Poncé S, Ponweiser T, Qiao J, Thöle F, Tsirkin SS, Wierzbowska M, Marzari N, Vanderbilt D, Souza I, Mostofi AA, Yates JR. Wannier90 as a community code: new features and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:165902. [PMID: 31658458 DOI: 10.1088/1361-648x/ab51ff] [Citation(s) in RCA: 227] [Impact Index Per Article: 56.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.
Collapse
Affiliation(s)
- Giovanni Pizzi
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
45
|
Kennes DM, Xian L, Claassen M, Rubio A. One-dimensional flat bands in twisted bilayer germanium selenide. Nat Commun 2020; 11:1124. [PMID: 32111848 PMCID: PMC7048812 DOI: 10.1038/s41467-020-14947-0] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2019] [Accepted: 02/06/2020] [Indexed: 12/02/2022] Open
Abstract
Experimental advances in the fabrication and characterization of few-layer materials stacked at a relative twist of small angle have recently shown the emergence of flat energy bands. As a consequence electron interactions become relevant, providing inroads into the physics of strongly correlated two-dimensional systems. Here, we demonstrate by combining large scale ab initio simulations with numerically exact strong correlation approaches that an effective one-dimensional system emerges upon stacking two twisted sheets of GeSe, in marked contrast to all moiré systems studied so far. This not only allows to study the necessarily collective nature of excitations in one dimension, but can also serve as a promising platform to scrutinize the crossover from two to one dimension in a controlled setup by varying the twist angle, which provides an intriguing benchmark with respect to theory. We thus establish twisted bilayer GeSe as an intriguing inroad into the strongly correlated physics of lowdimensional systems.
Collapse
Affiliation(s)
- D M Kennes
- Institut für Theorie der Statistischen Physik, RWTH Aachen University and JARA-Fundamentals of Future Information Technology, 52056, Aachen, Germany.
- Center for Free Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany.
| | - L Xian
- Center for Free Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - M Claassen
- Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York, NY, 10010, USA
| | - A Rubio
- Center for Free Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany.
- Center for Computational Quantum Physics, Simons Foundation Flatiron Institute, New York, NY, 10010, USA.
- Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del País Vasco, UPV/EHU-20018, San Sebastián, Spain.
| |
Collapse
|
46
|
Guzelturk B, Mei AB, Zhang L, Tan LZ, Donahue P, Singh AG, Schlom DG, Martin LW, Lindenberg AM. Light-Induced Currents at Domain Walls in Multiferroic BiFeO 3. NANO LETTERS 2020; 20:145-151. [PMID: 31746607 DOI: 10.1021/acs.nanolett.9b03484] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Multiferroic BiFeO3 (BFO) films with spontaneously formed periodic stripe domains can generate above-gap open circuit voltages under visible light illumination; nevertheless the underlying mechanism behind this intriguing optoelectronic response has not been understood to date. Here, we make contact-free measurements of light-induced currents in epitaxial BFO films via detecting terahertz radiation emanated by these currents, enabling a direct probe of the intrinsic charge separation mechanisms along with quantitative measurements of the current amplitudes and their directions. In the periodic stripe samples, we find that the net photocurrent is dominated by the charge separation across the domain walls, whereas in the monodomain samples the photovoltaic response arises from a bulk shift current associated with the non-centrosymmetry of the crystal. The peak current amplitude driven by the charge separation at the domain walls is found to be 2 orders of magnitude higher than the bulk shift current response, indicating the prominent role of domain walls acting as nanoscale junctions to efficiently separate photogenerated charges in the stripe domain BFO films. These findings show that domain-wall-engineered BFO thin films offer exciting prospects for ferroelectric-based optoelectronics, as well as bias-free strong terahertz emitters.
Collapse
Affiliation(s)
- Burak Guzelturk
- Department of Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
| | - Antonio B Mei
- Department of Materials Science and Engineering and Kavli Institute at Cornell for Nanoscale Science , Cornell University , Ithaca , New York 14853 , United States
| | - Lei Zhang
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | | | - Patrick Donahue
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | - Anisha G Singh
- Department of Applied Physics , Stanford University , Stanford , California 94305 , United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering and Kavli Institute at Cornell for Nanoscale Science , Cornell University , Ithaca , New York 14853 , United States
| | - Lane W Martin
- Department of Materials Science and Engineering , University of California Berkeley , Berkeley , California 94720 , United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering , Stanford University , Stanford , California 94305 , United States
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- The PULSE Institute for Ultrafast Energy Science , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- Department of Photon Science , Stanford University and SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
| |
Collapse
|
47
|
Pandey R, Vats G, Yun J, Bowen CR, Ho-Baillie AWY, Seidel J, Butler KT, Seok SI. Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807376. [PMID: 31441161 DOI: 10.1002/adma.201807376] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2018] [Revised: 03/23/2019] [Indexed: 06/10/2023]
Abstract
An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.
Collapse
Affiliation(s)
- Richa Pandey
- Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai, 400076, India
| | - Gaurav Vats
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jae Yun
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Chris R Bowen
- Materials Research Centre, Department of Mechanical Engineering, University of Bath, Bath, BA2 7AY, UK
| | - Anita W Y Ho-Baillie
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Keith Tobias Butler
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Oxford Didcot, Oxfordshire, OX11 0QX, UK
| | - Sang Il Seok
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50, Ulsan, 44919, South Korea
| |
Collapse
|
48
|
Switchable magnetic bulk photovoltaic effect in the two-dimensional magnet CrI 3. Nat Commun 2019; 10:3783. [PMID: 31439851 PMCID: PMC6706386 DOI: 10.1038/s41467-019-11832-3] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2019] [Accepted: 07/30/2019] [Indexed: 11/08/2022] Open
Abstract
The bulk photovoltaic effect (BPVE) rectifies light into the dc current in a single-phase material and attracts the interest to design high-efficiency solar cells beyond the pn junction paradigm. Because it is a hot electron effect, the BPVE surpasses the thermodynamic Shockley-Queisser limit to generate above-band-gap photovoltage. While the guiding principle for BPVE materials is to break the crystal centrosymmetry, here we propose a magnetic photogalvanic effect (MPGE) that introduces the magnetism as a key ingredient and induces a giant BPVE. The MPGE emerges from the magnetism-induced asymmetry of the carrier velocity in the band structure. We demonstrate the MPGE in a layered magnetic insulator CrI3, with much larger photoconductivity than any previously reported results. The photocurrent can be reversed and switched by controllable magnetic transitions. Our work paves a pathway to search for magnetic photovoltaic materials and to design switchable devices combining magnetic, electronic, and optical functionalities.
Collapse
|
49
|
Wang H, Qian X. Ferroicity-driven nonlinear photocurrent switching in time-reversal invariant ferroic materials. SCIENCE ADVANCES 2019; 5:eaav9743. [PMID: 31453323 PMCID: PMC6697433 DOI: 10.1126/sciadv.aav9743] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2018] [Accepted: 07/10/2019] [Indexed: 05/25/2023]
Abstract
Nonlinear optical responses to external electromagnetic field, characterized by second- and higher-order susceptibilities, play crucial roles in nonlinear optics and optoelectronics. Here, we demonstrate the possibility to achieve ferroicity-driven nonlinear photocurrent switching in time-reversal invariant multiferroics. It is enabled by the second-order current response to electromagnetic field whose direction can be controlled by both internal ferroic orders and external light polarization. Second-order direct photocurrent consists of shift current and circular photocurrent under linearly and circularly polarized light irradiation, respectively. We elucidate the microscopic mechanism in a representative class of two-dimensional multiferroic materials using group theoretical analyses and first-principles theory. The complex interplay of symmetries, shift vector, and Berry curvature governs the fundamental properties and switching behavior of shift current and circular photocurrent. Ferroicity-driven nonlinear photocurrent switching will open avenues for realizing nonlinear optoelectronics, nonlinear multiferroics, etc., using the coupled ferroic orders and nonlinear responses of ferroic materials under external field.
Collapse
|
50
|
Zhang YJ, Ideue T, Onga M, Qin F, Suzuki R, Zak A, Tenne R, Smet JH, Iwasa Y. Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes. Nature 2019; 570:349-353. [PMID: 31217597 DOI: 10.1038/s41586-019-1303-3] [Citation(s) in RCA: 93] [Impact Index Per Article: 18.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2018] [Accepted: 04/23/2019] [Indexed: 11/09/2022]
Abstract
The photovoltaic effect in traditional p-n junctions-where a p-type material (with an excess of holes) abuts an n-type material (with an excess of electrons)-involves the light-induced creation of electron-hole pairs and their subsequent separation, generating a current. This photovoltaic effect is particularly important for environmentally benign energy harvesting, and its efficiency has been increased dramatically, almost reaching the theoretical limit1. Further progress is anticipated by making use of the bulk photovoltaic effect (BPVE)2, which does not require a junction and occurs only in crystals with broken inversion symmetry3. However, the practical implementation of the BPVE is hampered by its low efficiency in existing materials4-10. Semiconductors with reduced dimensionality2 or a smaller bandgap4,5 have been suggested to be more efficient. Transition-metal dichalcogenides (TMDs) are exemplary small-bandgap, two-dimensional semiconductors11,12 in which various effects have been observed by breaking the inversion symmetry inherent in their bulk crystals13-15, but the BPVE has not been investigated. Here we report the discovery of the BPVE in devices based on tungsten disulfide, a member of the TMD family. We find that systematically reducing the crystal symmetry beyond mere broken inversion symmetry-moving from a two-dimensional monolayer to a nanotube with polar properties-greatly enhances the BPVE. The photocurrent density thus generated is orders of magnitude larger than that of other BPVE materials. Our findings highlight not only the potential of TMD-based nanomaterials, but also more generally the importance of crystal symmetry reduction in enhancing the efficiency of converting solar to electric power.
Collapse
Affiliation(s)
- Y J Zhang
- The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan. .,Max Planck Institute for Solid State Research, Stuttgart, Germany.
| | - T Ideue
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo, Japan
| | - M Onga
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo, Japan
| | - F Qin
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo, Japan
| | - R Suzuki
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo, Japan
| | - A Zak
- Faculty of Sciences, HIT-Holon Institute of Technology, Holon, Israel
| | - R Tenne
- Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
| | - J H Smet
- Max Planck Institute for Solid State Research, Stuttgart, Germany
| | - Y Iwasa
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo, Japan.,RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| |
Collapse
|