1
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Sahoo M, Onuorah IJ, Folkers LC, Kochetkova E, Chulkov EV, Otrokov MM, Aliev ZS, Amiraslanov IR, Wolter AUB, Büchner B, Corredor LT, Wang C, Salman Z, Isaeva A, De Renzi R, Allodi G. Ubiquitous Order-Disorder Transition in the Mn Antisite Sublattice of the (MnBi 2Te 4)(Bi 2Te 3) n Magnetic Topological Insulators. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402753. [PMID: 38973332 DOI: 10.1002/advs.202402753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2024] [Revised: 05/22/2024] [Indexed: 07/09/2024]
Abstract
Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi2Te4)(Bi2Te3)n layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this material platform is enabled by manganese-pnictogen intermixing, whose amounts and distribution patterns are controlled by synthetic conditions. Here, nuclear magnetic resonance and muon spin spectroscopy, sensitive local probe techniques, are employed to scrutinize the impact of the intermixing on the magnetic properties of (MnBi2Te4)(Bi2Te3)n and MnSb2Te4. The measurements not only confirm the opposite alignment between the Mn magnetic moments on native sites and antisites in the ground state of MnSb2Te4, but for the first time directly show the same alignment in (MnBi2Te4)(Bi2Te3)n with n = 0, 1 and 2. Moreover, for all compounds, the static magnetic moment of the Mn antisite sublattice is found to disappear well below the intrinsic magnetic transition temperature, leaving a homogeneous magnetic structure undisturbed by the intermixing. The findings provide a microscopic understanding of the crucial role played by Mn-Bi intermixing in (MnBi2Te4)(Bi2Te3)n and offer pathways to optimizing the magnetic gap in its surface states.
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Affiliation(s)
- Manaswini Sahoo
- Leibniz IFW Dresden, Helmholtzstraße 20, D-01069, Dresden, Germany
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062, Dresden, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Dresden, Germany
- Dipartimento di Scienze Matematiche, Fisiche e Informatiche, Universitá di Parma, Parco delle Scienze 7A, Parma, I-43124, Italy
| | - Ifeanyi John Onuorah
- Dipartimento di Scienze Matematiche, Fisiche e Informatiche, Universitá di Parma, Parco delle Scienze 7A, Parma, I-43124, Italy
| | - Laura Christina Folkers
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062, Dresden, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Dresden, Germany
| | - Ekaterina Kochetkova
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062, Dresden, Germany
- Van der Waals-Zeeman Institute, Department of Physics and Astronomy, University of Amsterdam, Science Park 094, Amsterdam, 1098 XH, Netherlands
| | - Evgueni V Chulkov
- Donostia International Physics Center, Sebastián, 20018 Donostia-San, Spain
- Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas, Universidad del País Vasco UPV/EHU, Donostia-San Sebastián, 20018, Spain
- Centro de Física de Materiales (CFM-MPC), Centro Mixto (CSIC-UPV/EHU), Donostia-San Sebastián, 20018, Spain
- Saint Petersburg State University, Saint Petersburg, 199034, Russia
| | - Mikhail M Otrokov
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Ziya S Aliev
- Baku State University, Baku, AZ1148, Azerbaijan
- Institute of Physics Ministry of Science and Education Republic of Azerbaijan, Baku, AZ1143, Azerbaijan
| | - Imamaddin R Amiraslanov
- Baku State University, Baku, AZ1148, Azerbaijan
- Institute of Physics Ministry of Science and Education Republic of Azerbaijan, Baku, AZ1143, Azerbaijan
| | - Anja U B Wolter
- Leibniz IFW Dresden, Helmholtzstraße 20, D-01069, Dresden, Germany
| | - Bernd Büchner
- Leibniz IFW Dresden, Helmholtzstraße 20, D-01069, Dresden, Germany
- Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062, Dresden, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Dresden, Germany
| | | | - Chennan Wang
- Laboratory for Muon Spin Spectroscopy, Paul-Scherrer-Institute, Villigen PSI, CH-5232, Switzerland
| | - Zaher Salman
- Laboratory for Muon Spin Spectroscopy, Paul-Scherrer-Institute, Villigen PSI, CH-5232, Switzerland
| | - Anna Isaeva
- Leibniz IFW Dresden, Helmholtzstraße 20, D-01069, Dresden, Germany
- Van der Waals-Zeeman Institute, Department of Physics and Astronomy, University of Amsterdam, Science Park 094, Amsterdam, 1098 XH, Netherlands
- Faculty of Physics, Technical University of Dortmund, Otto-Hahn-Str. 4, 44221, Dortmund, Germany
- Research Center Future Energy Materials and Systems (RC FEMS), Germany
| | - Roberto De Renzi
- Dipartimento di Scienze Matematiche, Fisiche e Informatiche, Universitá di Parma, Parco delle Scienze 7A, Parma, I-43124, Italy
| | - Giuseppe Allodi
- Dipartimento di Scienze Matematiche, Fisiche e Informatiche, Universitá di Parma, Parco delle Scienze 7A, Parma, I-43124, Italy
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2
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Wang M, Zhu K, Lei B, Deng Y, Hu T, Song D, Du H, Tian M, Xiang Z, Wu T, Chen X. Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe 3GaTe 2. NANO LETTERS 2024; 24:4141-4149. [PMID: 38536947 DOI: 10.1021/acs.nanolett.3c05148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.
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Affiliation(s)
- Mingjie Wang
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Kejia Zhu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Bin Lei
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yazhou Deng
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Tao Hu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Dongsheng Song
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Haifeng Du
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, People's Republic of China
| | - Mingliang Tian
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Ziji Xiang
- CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Tao Wu
- CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xianhui Chen
- CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei, Anhui 230026, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
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3
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Hu C, Qian T, Ni N. Recent progress in MnBi 2nTe 3n+1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder. Natl Sci Rev 2024; 11:nwad282. [PMID: 38213523 PMCID: PMC10776370 DOI: 10.1093/nsr/nwad282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Revised: 08/19/2023] [Accepted: 09/06/2023] [Indexed: 01/13/2024] Open
Abstract
The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.
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Affiliation(s)
- Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA
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4
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Roychowdhury S, Samanta K, Yanda P, Malaman B, Yao M, Schnelle W, Guilmeau E, Constantinou P, Chandra S, Borrmann H, Vergniory MG, Strocov V, Shekhar C, Felser C. Interplay between Magnetism and Topology: Large Topological Hall Effect in an Antiferromagnetic Topological Insulator, EuCuAs. J Am Chem Soc 2023. [PMID: 37267070 DOI: 10.1021/jacs.3c04249] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Magnetic interactions in combination with nontrivial band structures can give rise to several exotic physical properties such as a large anomalous Hall effect, the anomalous Nernst effect, and the topological Hall effect (THE). Antiferromagnetic (AFM) materials exhibit the THE due to the presence of nontrivial spin structures. EuCuAs crystallizes in a hexagonal structure with an AFM ground state (Néel temperature ∼ 16 K). In this work, we observe a large topological Hall resistivity of ∼7.4 μΩ-cm at 13 K which is significantly higher than the giant topological Hall effect of Gd2PdSi3 (∼3 μΩ-cm). Neutron diffraction experiments reveal that the spins form a transverse conical structure during the metamagnetic transition, resulting in the large THE. In addition, by controlling the magnetic ordering structure of EuCuAs with an external magnetic field, several fascinating topological states such as Dirac and Weyl semimetals have been revealed. These results suggest the possibility of spintronic devices based on antiferromagnets with tailored noncoplanar spin configurations.
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Affiliation(s)
| | - Kartik Samanta
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Premakumar Yanda
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Bernard Malaman
- Centre National de la Recherche Scientifique, Institut Jean Lamour, Université de Lorraine, Nancy 54011, France
| | - Mengyu Yao
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Walter Schnelle
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Emmanuel Guilmeau
- CRISMAT, CNRS, Normandie University, ENSICAEN, UNICAEN, 14000 Caen, France
| | | | - Sushmita Chandra
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Horst Borrmann
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Maia G Vergniory
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
- Donostia International Physics Center, 20018 Donostia-San Sebastian, Spain
| | - Vladimir Strocov
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen-PSI, Switzerland
| | - Chandra Shekhar
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
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5
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Tcakaev A, Rubrecht B, Facio JI, Zabolotnyy VB, Corredor LT, Folkers LC, Kochetkova E, Peixoto TRF, Kagerer P, Heinze S, Bentmann H, Green RJ, Gargiani P, Valvidares M, Weschke E, Haverkort MW, Reinert F, van den Brink J, Büchner B, Wolter AUB, Isaeva A, Hinkov V. Intermixing-Driven Surface and Bulk Ferromagnetism in the Quantum Anomalous Hall Candidate MnBi 6 Te 10. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2203239. [PMID: 36802132 PMCID: PMC10074120 DOI: 10.1002/advs.202203239] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 01/17/2023] [Indexed: 06/18/2023]
Abstract
The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi2 Te4 and MnBi4 Te7 benchmark the (MnBi2 Te4 )(Bi2 Te3 )n family as a promising hotbed for further QAHE improvements. The family owes its potential to its ferromagnetically (FM) ordered MnBi2 Te4 septuple layers (SLs). However, the QAHE realization is complicated in MnBi2 Te4 and MnBi4 Te7 due to the substantial antiferromagnetic (AFM) coupling between the SLs. An FM state, advantageous for the QAHE, can be stabilized by interlacing the SLs with an increasing number n of Bi2 Te3 quintuple layers (QLs). However, the mechanisms driving the FM state and the number of necessary QLs are not understood, and the surface magnetism remains obscure. Here, robust FM properties in MnBi6 Te10 (n = 2) with Tc ≈ 12 K are demonstrated and their origin is established in the Mn/Bi intermixing phenomenon by a combined experimental and theoretical study. The measurements reveal a magnetically intact surface with a large magnetic moment, and with FM properties similar to the bulk. This investigation thus consolidates the MnBi6 Te10 system as perspective for the QAHE at elevated temperatures.
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Affiliation(s)
- Abdul‐Vakhab Tcakaev
- Physikalisches Institut (EP‐IV)Universität WürzburgAm HublandD‐97074WürzburgGermany
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
| | - Bastian Rubrecht
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Jorge I. Facio
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Centro Atómico BarilocheInstituto de Nanociencia y Nanotecnología (CNEA‐CONICET) and Instituto Balseiro. Av. Bustillo 9500Bariloche8400Argentina
| | - Volodymyr B. Zabolotnyy
- Physikalisches Institut (EP‐IV)Universität WürzburgAm HublandD‐97074WürzburgGermany
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
| | - Laura T. Corredor
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Laura C. Folkers
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Institut für Festkörper‐ und MaterialphysikTechnische Universität DresdenD‐01062DresdenGermany
| | - Ekaterina Kochetkova
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Thiago R. F. Peixoto
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Philipp Kagerer
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Simon Heinze
- Institute for Theoretical PhysicsHeidelberg UniversityPhilosophenweg 1969120HeidelbergGermany
| | - Hendrik Bentmann
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Robert J. Green
- Department of Physics and Astronomy and Stewart Blusson Quantum Matter InstituteUniversity of British ColumbiaVancouverBritish ColumbiaV6T 1Z4Canada
- Department of Physics and Engineering PhysicsUniversity of SaskatchewanSaskatoonSKS7N 5E2Canada
| | - Pierluigi Gargiani
- ALBA Synchrotron Light SourceE‐08290 Cerdanyola del VallèsBarcelonaSpain
| | - Manuel Valvidares
- ALBA Synchrotron Light SourceE‐08290 Cerdanyola del VallèsBarcelonaSpain
| | - Eugen Weschke
- Helmholtz‐Zentrum Berlin für Materialien und EnergieAlbert‐Einstein‐Straße 15D‐12489BerlinGermany
| | - Maurits W. Haverkort
- Institute for Theoretical PhysicsHeidelberg UniversityPhilosophenweg 1969120HeidelbergGermany
| | - Friedrich Reinert
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Physikalisches Institut (EP‐VII)Universität WürzburgAm HublandD‐97074WürzburgGermany
| | - Jeroen van den Brink
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Institut für Theoretische PhysikTechnische Universität DresdenD‐01062DresdenGermany
| | - Bernd Büchner
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Institut für Festkörper‐ und MaterialphysikTechnische Universität DresdenD‐01062DresdenGermany
| | - Anja U. B. Wolter
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
| | - Anna Isaeva
- Leibniz Institut für Festkörper‐ und Werkstoffforschung (IFW) DresdenHelmholtzstraße 20D‐01069DresdenGermany
- Van der Waals‐Zeeman InstituteDepartment of Physics and AstronomyUniversity of AmsterdamScience Park 904Amsterdam1098 XHThe Netherlands
| | - Vladimir Hinkov
- Physikalisches Institut (EP‐IV)Universität WürzburgAm HublandD‐97074WürzburgGermany
- Würzburg‐Dresden Cluster of Excellence ct.qmatGermany
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6
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Cui J, Lei B, Shi M, Xiang Z, Wu T, Chen X. Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi 4Te 7. NANO LETTERS 2023; 23:1652-1658. [PMID: 36790199 DOI: 10.1021/acs.nanolett.2c03773] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The intrinsic antiferromagnetic topological insulator (TI) MnBi4Te7 provides a capacious playground for the realization of topological quantum phenomena, such as the axion insulator states and quantum anomalous Hall (QAH) effect. In addition to nontrivial band topology, magnetism is another necessary ingredient for realizing these quantum phenomena. Here, we investigate signatures of thickness-dependent magnetism in exfoliated MnBi4Te7 thin flakes. We observe an obvious odd-even layer-number effect in few-layer MnBi4Te7. Noticeably, we show that in monolayer MnBi4Te7 the anomalous Hall effect exhibits a sign reversal. Compared with the case of MnBi2Te4, interlayer antiferromagnetic exchange coupling, which is essential for the realization of the QAH effect, is greatly suppressed in MnBi4Te7. The demonstration of thickness-dependent magnetic properties is helpful to further explore the topological quantum phenomena in MnBi4Te7.
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Affiliation(s)
| | | | | | | | - Tao Wu
- CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xianhui Chen
- CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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7
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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8
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Xu X, Yang S, Wang H, Guzman R, Gao Y, Zhu Y, Peng Y, Zang Z, Xi M, Tian S, Li Y, Lei H, Luo Z, Yang J, Wang Y, Xia T, Zhou W, Huang Y, Ye Y. Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi 4Te 7 and MnBi 6Te 10. Nat Commun 2022; 13:7646. [PMID: 36496444 PMCID: PMC9741634 DOI: 10.1038/s41467-022-35184-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Accepted: 11/22/2022] [Indexed: 12/13/2022] Open
Abstract
Natural superlattice structures MnBi2Te4(Bi2Te3)n (n = 1, 2, ...), in which magnetic MnBi2Te4 layers are separated by nonmagnetic Bi2Te3 layers, hold band topology, magnetism and reduced interlayer coupling, providing a promising platform for the realization of exotic topological quantum states. However, their magnetism in the two-dimensional limit, which is crucial for further exploration of quantum phenomena, remains elusive. Here, complex ferromagnetic-antiferromagnetic coexisting ground states that persist down to the 2-septuple layers limit are observed and comprehensively investigated in MnBi4Te7 (n = 1) and MnBi6Te10 (n = 2). The ubiquitous Mn-Bi site mixing modifies or even changes the sign of the subtle interlayer magnetic interactions, yielding a spatially inhomogeneous interlayer coupling. Further, a tunable exchange bias effect, arising from the coupling between the ferromagnetic and antiferromagnetic components in the ground state, is observed in MnBi2Te4(Bi2Te3)n (n = 1, 2), which provides design principles and material platforms for future spintronic devices. Our work highlights a new approach toward the fine-tuning of magnetism and paves the way for further study of quantum phenomena in MnBi2Te4(Bi2Te3)n (n = 1, 2) as well as their magnetic applications.
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Affiliation(s)
- Xiaolong Xu
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China ,grid.43555.320000 0000 8841 6246School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081 China ,grid.495569.2Collaborative Innovation Center of Quantum Matter, Beijing, 100871 China
| | - Shiqi Yang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871 China
| | - Huan Wang
- grid.24539.390000 0004 0368 8103Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872 China
| | - Roger Guzman
- grid.410726.60000 0004 1797 8419School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Yuchen Gao
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Yaozheng Zhu
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Yuxuan Peng
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Zhihao Zang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Ming Xi
- grid.24539.390000 0004 0368 8103Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872 China
| | - Shangjie Tian
- grid.24539.390000 0004 0368 8103Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872 China
| | - Yanping Li
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Hechang Lei
- grid.24539.390000 0004 0368 8103Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872 China ,grid.24539.390000 0004 0368 8103Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing, 100872 China
| | - Zhaochu Luo
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Jinbo Yang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Yeliang Wang
- grid.43555.320000 0000 8841 6246School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081 China
| | - Tianlong Xia
- grid.24539.390000 0004 0368 8103Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872 China
| | - Wu Zhou
- grid.410726.60000 0004 1797 8419School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China ,grid.410726.60000 0004 1797 8419CAS Centre for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Yuan Huang
- grid.43555.320000 0000 8841 6246School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081 China ,grid.43555.320000 0000 8841 6246Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081 China
| | - Yu Ye
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China ,grid.495569.2Collaborative Innovation Center of Quantum Matter, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010 Jiangsu China
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9
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McLaughlin NJ, Hu C, Huang M, Zhang S, Lu H, Yan GQ, Wang H, Tserkovnyak Y, Ni N, Du CR. Quantum Imaging of Magnetic Phase Transitions and Spin Fluctuations in Intrinsic Magnetic Topological Nanoflakes. NANO LETTERS 2022; 22:5810-5817. [PMID: 35816128 DOI: 10.1021/acs.nanolett.2c01390] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Topological materials featuring exotic band structures, unconventional current flow patterns, and emergent organizing principles offer attractive platforms for the development of next-generation transformative quantum electronic technologies. The family of MnBi2Te4 (Bi2Te3)n materials is naturally relevant in this context due to their nontrivial band topology, tunable magnetism, and recently discovered extraordinary quantum transport behaviors. Despite numerous pioneering studies to date, the local magnetic properties of MnBi2Te4 (Bi2Te3)n remain an open question, hindering a comprehensive understanding of their fundamental material properties. Exploiting nitrogen-vacancy (NV) centers in diamond, we report nanoscale quantum imaging of the magnetic phase transitions and spin fluctuations in exfoliated MnBi4Te7 flakes, revealing the underlying spin transport physics and magnetic domains at the nanoscale. Our results highlight the unique advantage of NV centers in exploring the magnetic properties of emergent quantum materials, opening new opportunities for investigating the interplay between topology and magnetism.
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Affiliation(s)
- Nathan J McLaughlin
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
| | - Chaowei Hu
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Mengqi Huang
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
| | - Shu Zhang
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Hanyi Lu
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
| | - Gerald Q Yan
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
| | - Hailong Wang
- Center for Memory and Recording Research, University of California, San Diego, La Jolla, California 92093, United States
| | - Yaroslav Tserkovnyak
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Ni Ni
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Chunhui Rita Du
- Department of Physics, University of California, San Diego, La Jolla, California 92093, United States
- Center for Memory and Recording Research, University of California, San Diego, La Jolla, California 92093, United States
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10
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Liang A, Chen C, Zheng H, Xia W, Huang K, Wei L, Yang H, Chen Y, Zhang X, Xu X, Wang M, Guo Y, Yang L, Liu Z, Chen Y. Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi 2Te 4 via Surface Modification. NANO LETTERS 2022; 22:4307-4314. [PMID: 35604392 DOI: 10.1021/acs.nanolett.1c04930] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The topological electronic structure plays a central role in the nontrivial physical properties in topological quantum materials. A minimal, "hydrogen-atom-like" topological electronic structure is desired for research. In this work, we demonstrate an effort toward the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a trivial Rashba-type surface state (RSS), which could be efficiently removed by the in situ surface potassium (K) dosing. By employing multiple experimental methods to characterize K dosed surface, we attribute such a modification to the electrochemical reactions of K clusters on the surface. Our work not only gives a clear band assignment in MnBi2Te4 but also provides possible new routes in accentuating the topological behavior in the magnetic topological quantum materials.
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Affiliation(s)
- Aiji Liang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Cheng Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Huijun Zheng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Kui Huang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Liyang Wei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Haifeng Yang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yujie Chen
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Xin Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xuguang Xu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Meixiao Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
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11
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Zang Z, Zhu Y, Xi M, Tian S, Wang T, Gu P, Peng Y, Yang S, Xu X, Li Y, Han B, Liu L, Wang Y, Gao P, Yang J, Lei H, Huang Y, Ye Y. Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}. PHYSICAL REVIEW LETTERS 2022; 128:017201. [PMID: 35061452 DOI: 10.1103/physrevlett.128.017201] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Revised: 10/25/2021] [Accepted: 11/29/2021] [Indexed: 05/23/2023]
Abstract
MnBi_{2}Te_{4}, an intrinsic magnetic topological insulator, has shown layer-number-correlated magnetic and topological phases. More interestingly, in the isostructural material MnSb_{2}Te_{4}, the antiferromagnetic (AFM) and ferromagnetic (FM) states have been both observed in the bulk counterparts, which are also predicted to be topologically nontrivial. Revealing the layer-number-dependent magnetic properties of MnSb_{2}Te_{4} down to a single septuple layer (SL) is of great significance for exploring the topological phenomena. However, this is still elusive. Here, using the polar reflective magnetic circular dichroism spectroscopy, both the A-type AFM and FM behaviors are observed and comprehensively studied in MnSb_{2}Te_{4} down to a single SL limit. In A-type AFM MnSb_{2}Te_{4} flakes, an obvious odd-even layer-number effect is observed. An additional surface spin-flop (SSF) transition occurs in even-SL flakes with the number of layers larger than 2. With the AFM linear-chain model, we identify that the even-SL flakes stabilize in a collinear state between the SSF transition and the spin-flop transition due to their appropriate energy ratio between the magnetic-field-scale anisotropy and interlayer interaction. In FM MnSb_{2}Te_{4} flakes, we observe very different magnetic behaviors with an abrupt spin-flipping transition and very small saturation fields, indicating a weakened interlayer interaction. By revealing the rich magnetic states of few-SL MnSb_{2}Te_{4} on the parameter space of the number of layers, external magnetic field, and temperature, our findings pave the way for further quantum transport studies of few-SL MnSb_{2}Te_{4}.
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Affiliation(s)
- Zhihao Zang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yaozheng Zhu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Ming Xi
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Shangjie Tian
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Tingting Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Pingfan Gu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yuxuan Peng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Shiqi Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Xiaolong Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yanping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Bo Han
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Liwei Liu
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Gao
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China
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12
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Roychowdhury S, Singh S, Guin SN, Kumar N, Chakraborty T, Schnelle W, Borrmann H, Shekhar C, Felser C. Giant Topological Hall Effect in the Noncollinear Phase of Two-Dimensional Antiferromagnetic Topological Insulator MnBi 4Te 7. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2021; 33:8343-8350. [PMID: 34776612 PMCID: PMC8582087 DOI: 10.1021/acs.chemmater.1c02625] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Revised: 09/29/2021] [Indexed: 05/22/2023]
Abstract
Magnetic topological insulators provide an important platform for realizing several exotic quantum phenomena, such as the axion insulating state and the quantum anomalous Hall effect, owing to the interplay between topology and magnetism. MnBi4Te7 is a two-dimensional Z2 antiferromagnetic (AFM) topological insulator with a Néel temperature of ∼13 K. In AFM materials, the topological Hall effect (THE) is observed owing to the existence of nontrivial spin structures. A material with noncollinearity that develops in the AFM phase rather than at the onset of the AFM order is particularly important. In this study, we observed that such an unanticipated THE starts to develop in a MnBi4Te7 single crystal when the magnetic field is rotated away from the easy axis (c-axis) of the system. Furthermore, the THE resistivity reaches a giant value of ∼7 μΩ-cm at 2 K when the angle between the magnetic field and the c-axis is 75°. This value is significantly higher than the values for previously reported systems with noncoplanar structures. The THE can be ascribed to the noncoplanar spin structure resulting from the canted state during the spin-flip transition in the ground AFM state of MnBi4Te7. The large THE at a relatively low applied field makes the MnBi4Te7 system a potential candidate for spintronic applications.
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13
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Shao J, Liu Y, Zeng M, Li J, Wu X, Ma XM, Jin F, Lu R, Sun Y, Gu M, Wang K, Wu W, Wu L, Liu C, Liu Q, Zhao Y. Pressure-Tuned Intralayer Exchange in Superlattice-Like MnBi 2Te 4/(Bi 2Te 3) n Topological Insulators. NANO LETTERS 2021; 21:5874-5880. [PMID: 34197120 DOI: 10.1021/acs.nanolett.1c01874] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The magnetic structures of MnBi2Te4(Bi2Te3)n can be manipulated by tuning the interlayer coupling via the number of Bi2Te3 spacer layers n, while the intralayer ferromagnetic (FM) exchange coupling is considered too robust to control. By applying hydrostatic pressure up to 3.5 GPa, we discover opposite responses of magnetic properties for n = 1 and 2. MnBi4Te7 stays at A-type antiferromagnetic (AFM) phase with a decreasing Néel temperature and an increasing saturation field. In sharp contrast, MnBi6Te10 experiences a phase transition from A-type AFM to a quasi-two-dimensional FM state with a suppressed saturation field under pressure. First-principles calculations reveal the essential role of intralayer exchange coupling from lattice compression in determining these magnetic properties. Such magnetic phase transition is also observed in 20% Sb-doped MnBi6Te10 because of the in-plane lattice compression.
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Affiliation(s)
- Jifeng Shao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuntian Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Meng Zeng
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jingyuan Li
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xuefeng Wu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiao-Ming Ma
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Feng Jin
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Ruie Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yichen Sun
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mingqiang Gu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kedong Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wenbin Wu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Liusuo Wu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Chang Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qihang Liu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong Provincial Key Laboratory for Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yue Zhao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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