Spin-Polarized Intergrain Tunneling in La2/3Sr1/3MnO3

Study of the correlation between the magnetic and electrical properties of the La0.6Sr0.4MnO3 compound

In this work, we investigated the relationship between the electrical and magnetic properties of the superparamagnetic (SPM) La0.6Sr0.4MnO3 (S1C0) compound prepared by the sol-gel method. The (S1C0) sample displayed a ferromagnetic metallic (FMM) behavior at low temperatures and a paramagnetic semiconductor (PMSC) behavior at high temperatures. The FMM behavior was described by the Zener Double Exchange (ZDE) polynomial law containing the contributions of the electron-electron (e-e) interactions and the electron-magnon (e-m) scattering. The PMSC behavior was described by the Mott Variable Range Hopping (Mott-VRH) transport model. The semiconductor/metallic transition temperature has been approximated at the blocking temperature. The Thermal Coefficient of Resistivity (TCR), which exhibits a linear variation around ambient temperature, can be used as a calibration curve for thermometry. Thus, our sample can be considered as a good candidate for the detection of infrared radiation used in night vision bolometer technologies.

Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 ×  107 ℏ/2e  Ω⁻¹  m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

High-Pressure Synthesis of Quadruple Perovskite Oxide CaCu3Cr2Re2O12 with a High Ferrimagnetic Curie Temperature

An AA'3B2B'2O12-type quadruple perovskite oxide of CaCu3Cr2Re2O12 was synthesized at 18 GPa and 1373 K. Both an A- and B-site ordered quadruple perovskite crystal structure was observed, with the space group Pn-3. The valence states are verified to be CaCu32+Cr23+Re25+O12 by bond valence sum calculations and synchrotron X-ray absorption spectroscopy. The spin interaction among Cu2+, Cr3+, and Re5+ generates a ferrimagnetic transition with the Curie temperature (TC) at about 360 K. Moreover, electric transport properties and specific heat data suggest the presence of a half-metallic feature for this compound. The present study provides a promising quadruple perovskite oxide with above-room-temperature ferrimagnetism and possible half-metallic properties, which shows potential in the usage of spintronic devices.

Magnetoresistance and Magnetic Relaxation of La-Sr-Mn-O Films Grown on Si/SiO2 Substrate by Pulsed Injection MOCVD

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La_1-xSr_xMn_yO₃ (LSMO) films with different film thicknesses (60-480 nm) grown on Si/SiO₂ substrate by the pulsed-injection MOCVD technique are presented and compared with the reference manganite LSMO/Al₂O₃ films of the same thickness. The MR was investigated in permanent (up to 0.7 T) and pulsed (up to 10 T) magnetic fields in the temperature range of 80-300 K, and the resistance-relaxation processes were studied after the switch-off of the magnetic pulse with an amplitude of 10 T and a duration of 200 μs. It was found that the high-field MR values were comparable for all investigated films (~-40% at 10 T), whereas the memory effects differed depending on the film thickness and substrate used for the deposition. It was demonstrated that resistance relaxation to the initial state after removal of the magnetic field occurred in two time scales: fast' (~300 μs) and slow (longer than 10 ms). The observed fast relaxation process was analyzed using the Kolmogorov-Avrami-Fatuzzo model, taking into account the reorientation of magnetic domains into their equilibrium state. The smallest remnant resistivity values were found for the LSMO films grown on SiO₂/Si substrate in comparison to the LSMO/Al₂O₃ films. The testing of the LSMO/SiO₂/Si-based magnetic sensors in an alternating magnetic field with a half-period of 22 μs demonstrated that these films could be used for the development of fast magnetic sensors operating at room temperature. For operation at cryogenic temperature, the LSMO/SiO₂/Si films could be employed only for single-pulse measurements due to magnetic-memory effects.

Engineering of Advanced Materials for High Magnetic Field Sensing: A Review

Advanced scientific and industrial equipment requires magnetic field sensors with decreased dimensions while keeping high sensitivity in a wide range of magnetic fields and temperatures. However, there is a lack of commercial sensors for measurements of high magnetic fields, from ∼1 T up to megagauss. Therefore, the search for advanced materials and the engineering of nanostructures exhibiting extraordinary properties or new phenomena for high magnetic field sensing applications is of great importance. The main focus of this review is the investigation of thin films, nanostructures and two-dimensional (2D) materials exhibiting non-saturating magnetoresistance up to high magnetic fields. Results of the review showed how tuning of the nanostructure and chemical composition of thin polycrystalline ferromagnetic oxide films (manganites) can result in a remarkable colossal magnetoresistance up to megagauss. Moreover, by introducing some structural disorder in different classes of materials, such as non-stoichiometric silver chalcogenides, narrow band gap semiconductors, and 2D materials such as graphene and transition metal dichalcogenides, the possibility to increase the linear magnetoresistive response range up to very strong magnetic fields (50 T and more) and over a large range of temperatures was demonstrated. Approaches for the tailoring of the magnetoresistive properties of these materials and nanostructures for high magnetic field sensor applications were discussed and future perspectives were outlined.

Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response

Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La_0.7Sr_0.3MnO₃ thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.

Enhancement of Room-Temperature Low-Field Magnetoresistance in Nanostructured Lanthanum Manganite Films for Magnetic Sensor Applications

The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal−insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17−0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

Twisted oxide lateral homostructures with conjunction tunability

Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial "blocks" with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films.

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field.

Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

The results of colossal magnetoresistance (CMR) properties of La_0.83Sr_0.17Mn_1.21O₃ (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al₂O₃, and amorphous Si/SiO₂ substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

Large Low-Field Magnetoresistance (LFMR) Effect in Free-Standing La0.7Sr0.3MnO3 Films

The realization of a large low-field magnetoresistance (LFMR) effect in free-standing magnetic oxide films is a crucial goal toward promoting the development of flexible, low power consumption, and nonvolatile memory devices for information storage. La_0.7Sr_0.3MnO₃ (LSMO) is an ideal material for spintronic devices due to its excellent magnetic and electronic properties. However, it is difficult to achieve both a large LFMR effect and high flexibility in LSMO films due to the lack of research on LFMR-related mechanisms and the strict LSMO growth conditions, which require rigid substrates. Here, we induced a large LFMR effect in an LSMO/mica heterostructure by utilizing a disorder-related spin-polarized tunneling effect and developed a simple transfer method to obtain free-standing LSMO films for the first time. Electrical and magnetic characterizations of these free-standing LSMO films revealed that all of the principal properties of LSMO were sustained under compressive and tensile conditions. Notably, the magnetoresistance of the processed LSMO film reached up to 16% under an ultrasmall magnetic field (0.1 T), which is 80 times that of a traditional LSMO film. As a demonstration, a stable nonvolatile multivalue storage function in flexible LSMO films was successfully achieved. Our work may pave the way for future wearable resistive memory device applications.

Broadband dielectric spectroscopy of La0.65Sr0.35MnO3@TiO2core-shell nanocomposites

Core-shell composites of ferromagnetic conducting nanoparticles La0.65Sr0.35MnO3(LSMO) embedded in an insulating matrix of TiO2(LSMO@TiO2) have been processed, structurally and magnetically characterized, and their DC magnetoresistivity and complex dielectric response measured and fitted from Hz up to the infrared (IR) range (1014Hz). XRD indicates that the TiO2shells are amorphous. Modelling of the IR spectra using standard models based on the effective medium approximation has it confirmed and has characterized the effective phonon modes of the LSMO nanoceramics and LSMO@TiO2composite. Modelling of the lower-frequency spectra has shown that TiO2shell thicknesses are rather non-uniform down to thin nm values, which leads to giant low-frequency permittivity values and non-negligible free-carrier tunnelling among the LSMO cores. Two main dielectric dispersion regions were observed and shown to be due to the inhomogeneous conductivity-the one occuring in the 1011-1012Hz range relates to nonmagnetic less-conducting dead layers on the surface of LSMO nanocrystallites and the broad second one below the 1010Hz range is due to the non-uniform thicknesses of the dielectric TiO2shells. In the IR range, effective phonon modes of the LSMO nanoceramics and LSMO@TiO2composite were characterized from the reflectivity spectra.

Long-Range Magnetic Order in Oxide Quantum Wells Hosting Two-Dimensional Electron Gases

To incorporate spintronics functionalities into two-dimensional devices, it is strongly desired to get two-dimensional electron gases (2DEGs) with high spin polarization. Unfortunately, the magnetic characteristics of the typical 2DEG at the LaAlO₃/SrTiO₃ interface are very weak due to the nonmagnetic character of SrTiO₃ and LaAlO₃. While most of the previous works focused on perovskite oxides, here, we extended the exploration for magnetic 2DEG beyond the scope of perovskite combinations, composing 2DEG with SrTiO₃ and NaCl-structured EuO that owns a large saturation magnetization and a fairly high Curie temperature. We obtained the 2DEGs that show long-range magnetic order and thus unusual behaviors marked by isotropic butterfly shaped magnetoresistance and remarkable anomalous Hall effect. We found evidence for the presence of more conductive domain walls than elsewhere in the oxide layer where the 2DEG resides. More than that, a relation between interfacial magnetism and carrier density is established. On this basis, the intermediate magnetic states between short-range and long-range ordered states can be achieved. The present work provides guidance for the design of high-performance magnetic 2DEGs.

Atomic origin of spin-valve magnetoresistance at the SrRuO3 grain boundary

Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides because of the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8° SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance occurs because of dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

Structural study and large magnetocaloric entropy change at room temperature of La1-x □ x MnO3 compounds

In this study, our central focus is to investigate the magnetocaloric characteristics of a La_1-x □ _x MnO₃ (x = 0.1, 0.2 and 0.3) series prepared by a sol-gel technique published in Prog. Mater. Sci., 93, 2018, 112-232. The crystallographic study revealed that our compounds crystallize in a rhombohedral structure with R3̄c. Ferromagnetic (FM) and paramagnetic (PM) characters were detected from the variation in magnetization as a function of magnetic fields at different temperatures. The second order transition was verified from the Arrott plots (M ² vs. (μ ₀ H/M)), where the slopes have a positive value. In order to verify the second order, we traced the variation of magnetization vs. temperature at different magnetic fields for x = 0.2. This revealed a ferromagnetic (FM)-paramagnetic (PM) transition when temperature increases. Relying on the indirect method while using the Maxwell formula, we determined the variation in the entropy (-ΔS _M) as a function of temperature for different magnetic fields for the three samples. We note that all the studied systems stand as good candidates for magnetic refrigeration with relative cooling power (RCP) values of around 131.4, 83.38 and 57.26 J kg^-1 with magnetic fields below 2 T, respectively. Subsequently, the magnetocaloric effect was investigated by a phenomenological model for x = 0.2. The extracted data confirm that this phenomenological model is appropriate for the prediction of magnetocaloric properties. The study also demonstrated that this La_0.8□_0.2MnO₃ system exhibits a universal behaviour.

Textured Manganite Films Anywhere

New paradigms are required in microelectronics when the transistor is in its downscaling limit and integration of materials presenting functional properties not available in classical silicon is one of the promising alternatives. Here, we demonstrate the possibility to grow La_0.67Sr_0.33MnO₃ (LSMO) functional materials on amorphous substrates with properties close to films grown on single-crystalline substrates using a two-dimensional seed layer. X-ray diffraction and electron backscatter diffraction mapping demonstrate that the Ca₂Nb₃O₁₀^- nanosheet (NS) layer induces epitaxial stabilization of LSMO films with a strong out-of-plane (001) texture, whereas the growth of LSMO films on uncoated glass substrates exhibits a nontextured polycrystalline phase. The magnetic properties of LSMO films deposited on NS are similar to those of the LSMO grown on SrTiO₃ single-crystal substrates in the same conditions (which is used as a reference in this work). Moreover, transport measurements take advantages of the texture and polycrystalline properties to induce low-field magnetoresistance at low temperature and also a high value of 40% magnetoresistance from 10 to 300 K, making it interesting for sensor applications. Therefore, the NS seed layer offers new perspectives for the integration of functional materials grown at moderate temperatures on any substrate, which will be the key for the development of oxitronics.

An empirical model for magnetic field dependent resistivity and magnetoresistance in manganites: application on polycrystalline charge-ordered La0.4Gd0.1Ca0.5MnO3

In this paper, we have investigated the electrical and magnetic response of a La0.4Gd0.1Ca0.5MnO3 polycrystalline sample. This sample seems to exhibit fascinating phenomena like charge ordering, magnetic phase separation, training effects and kinetic arrest. It also shows colossal values of negative magnetoresistance (∼91.7% at 96 K under 1 T applied magnetic field), which raises the possibility of using this sample for technological applications. We have also proposed, in this work, a new empirical model to describe the evolution of resistivity and magnetoresistance as a function of magnetic field. This model was successfully tested on the La0.4Gd0.1Ca0.5MnO3 sample in spite of its complicated magnetic behavior, which suggests the use of this model for other magnetic samples in order to check its validity.

Direct Determination of Atomic Structure and Magnetic Coupling of Magnetite Twin Boundaries

Clarifying how the atomic structure of interfaces/boundaries in materials affects the magnetic coupling nature across them is of significant academic value and will facilitate the development of state-of-the-art magnetic devices. Here, by combining atomic-resolution transmission electron microscopy, atomistic spin-polarized first-principles calculations, and differential phase contrast imaging, we conduct a systematic investigation of the atomic and electronic structures of individual Fe₃O₄ twin boundaries (TBs) and determine their concomitant magnetic couplings. We demonstrate that the magnetic coupling across the Fe₃O₄ TBs can be either antiferromagnetic or ferromagnetic, which directly depends on the TB atomic core structures and resultant electronic structures within a few atomic layers. Revealing the one-to-one correspondence between local atomic structures and magnetic properties of individual grain boundaries will shed light on in-depth understanding of many interesting magnetic behaviors of widely used polycrystalline magnetic materials, which will surely promote the development of advanced magnetic materials and devices.

Spin-dependent and spin-independent channels of electrical transport in perovskite manganites

A model with two channels of electrical transport (TCET) for perovskite manganites is proposed, and it is described by an equivalent device with two current-carrier channels.

55Mn NMR observation of colossal magnetoresistance effect in Sm0.55Sr0.45MnO3

Temperature dependent ⁵⁵Mn NMR study of Sm_0.55Sr_0.45MnO₃ is reported. Previous bulk magnetization measurements have shown that below T _C ~ 125 K the sample is ferromagnetic metallic (FMM) and above T_C it is charge ordered and insulating. In present report, we show that from zero-field NMR a single line double-exchange (DE) signal is observed at temperatures up to 139 K, which is due to a presence of FMM clusters also above T _C. The intensity of the DE line follows the temperature dependence of the magnetization measured at 0.01 T. When a magnetic field up to 2 T is applied at 139 K (i.e. 14 K above T _C), a strong increase in NMR intensity of the DE line is observed indicating that content of FMM regions increases. This reveals that metallicity is induced in the material by the applied magnetic field and explains the observed colossal magnetoresistance (CMR) effect at the microscopic level. The observation agrees with previous results, which confirm that the percolation of the FMM clusters is responsible for the CMR effect. The shift of the resonant frequency in the applied field is three times smaller compared to decrease expected from gyromagnetic ratio, which indicates an antiferromagnetic coupling between the FMM clusters.

One Step Toward a New Generation of C-MOS Compatible Oxide P-N Junctions: Structure of the LSMO/ZnO Interface Elucidated by an Experimental and Theoretical Synergic Work

Heterostructures formed by La_0.7Sr_0.3MnO₃/ZnO (LSMO/ZnO) interfaces exhibit extremely interesting electronic properties making them promising candidates for novel oxide p-n junctions, with multifunctional features. In this work, the structure of the interface is studied through a combined experimental/theoretical approach. Heterostructures were grown epitaxially and homogeneously on 4″ silicon wafers, characterized by advanced electron microscopy imaging and spectroscopy and simulated by ab initio density functional theory calculations. The simulation results suggest that the most stable interface configuration is composed of the (001) face of LSMO, with the LaO planes exposed, in contact with the (112̅0) face of ZnO. The ab initio predictions agree well with experimental high-angle annular dark field scanning transmission electron microscopy images and confirm the validity of the suggested structural model. Electron energy loss spectroscopy confirms the atomic sharpness of the interface. From statistical parameter estimation theory, it has been found that the distances between the interfacial planes are displaced from the respective ones of the bulk material. This can be ascribed to the strain induced by the mismatch between the lattices of the two materials employed.

Many-body Tunneling and Nonequilibrium Dynamics of Doublons in Strongly Correlated Quantum Dots

Quantum tunneling dominates coherent transport at low temperatures in many systems of great interest. In this work we report a many–body tunneling (MBT), by nonperturbatively solving the Anderson multi-impurity model, and identify it a fundamental tunneling process on top of the well–acknowledged sequential tunneling and cotunneling. We show that the MBT involves the dynamics of doublons in strongly correlated systems. Proportional to the numbers of dynamical doublons, the MBT can dominate the off–resonant transport in the strongly correlated regime. A T^3/2–dependence of the MBT current on temperature is uncovered and can be identified as a fingerprint of the MBT in experiments. We also prove that the MBT can support the coherent long–range tunneling of doublons, which is well consistent with recent experiments on ultracold atoms. As a fundamental physical process, the MBT is expected to play important roles in general quantum systems.

Surface-Driven Magnetotransport in Perovskite Nanocrystals

Unique insights into magnetotransport in 20 nm ligand-free La_0.67 Sr_0.33 MnO₃ perovskite nanocrystals of nearly perfect crystalline quality reveal a chemically altered 0.8 nm thick surface layer that triggers exceptionally large magnetoresistance at low temperature, independently of the spin polarization of the ferromagnetic core. This discovery shows how the nanoscale impacts magnetotransport in a material widely spread as electrode in hybrid spintronic devices.

Enhancement of Low-field Magnetoresistance in Self-Assembled Epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O4 Composite Films via Polymer-Assisted Deposition

Polymer-assisted deposition method has been used to fabricate self-assembled epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O4 films on LaAlO3 substrates. Compared to pulsed-laser deposition method, polymer-assisted deposition provides a simpler and lower-cost approach to self-assembled composite films with enhanced low-field magnetoresistance effect. After the addition of NiO or Co3O4, triangular NiO and tetrahedral Co3O4 nanoparticles remain on the surface of La0.67Ca0.33MnO3 films. This results in a dramatic increase in resistivity of the films from 0.0061 Ω•cm to 0.59 Ω•cm and 1.07 Ω•cm, and a decrease in metal-insulator transition temperature from 270 K to 180 K and 172 K by the addition of 10%-NiO and 10%-Co3O4, respectively. Accordingly, the maximum absolute magnetoresistance value is improved from -44.6% to -59.1% and -52.7% by the addition of 10%-NiO and 10%-Co3O4, respectively. The enhanced low-field magnetoresistance property is ascribed to the introduced insulating phase at the grain boundaries. The magnetism is found to be more suppressed for the La0.67Ca0.33MnO3:Co3O4 composite films than the La0.67Ca0.33MnO3:NiO films, which can be attributed to the antiferromagnetic properties of the Co3O4 phase. The solution-processed composite films show enhanced low-field magnetoresistance effect which are crucial in practical applications. We expect our polymer-assisted deposited films paving the pathway in the field of hole-doped perovskites with their intrinsic colossal magnetoresistance.

Evidence of weak localization in quantum interference effects observed in epitaxial La0.7Sr0.3MnO3 ultrathin films

Quantum interference effects (QIEs) dominate the appearance of low-temperature resistivity minimum in colossal magnetoresistance manganites. The T^1/2 dependent resistivity under high magnetic field has been evidenced as electron-electron (e-e) interaction. However, the evidence of the other source of QIEs, weak localization (WL), still remains insufficient in manganites. Here we report on the direct experimental evidence of WL in QIEs observed in the single-crystal La_0.7Sr_0.3MnO₃ (LSMO) ultrathin films deposited by laser molecular beam epitaxy. The sharp cusps around zero magnetic field in magnetoresistance measurements is unambiguously observed, which corresponds to the WL effect. This convincingly leads to the solid conclusion that the resistivity minima at low temperatures in single-crystal manganites are attributed to both the e-e interaction and the WL effect. Moreover, the temperature-dependent phase-coherence length corroborates the WL effect of LSMO ultrathin films is within a two-dimensional localization theory.

Anomalous Electronic Anisotropy Triggered by Ferroelastic Coupling in Multiferroic Heterostructures

The ferroelastic strain coupling in multiferroic heterostructures is explored aiming at novel physical effects and fascinating functionality. Ferroelastic domain walls in manganites induced by a stripe BiFeO3 template can modulate the electronic transfer and sufficiently block the magnetic ordering, creating a vast anisotropy. The findings suggest the great importance of ferroelastic strain engineering in material modifications.

Vertical La0.7Ca0.3MnO3 nanorods tailored by high magnetic field assisted pulsed laser deposition

La0.7Ca0.3MnO3 (LCMO) thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) [LSAT (001)] single crystal substrates have been prepared by high magnetic field assisted pulsed laser deposition (HMF-PLD) developed by ourselves. Uniformly sized and vertically aligned nanorod structures can be obtained under an applied high magnetic field above 5 T, and the dimension size of the nanorods can be manipulated by varying the applied magnetic field. It is found that the magnetic anisotropy is strongly correlated to the dimension size of the nanorods. A significantly enhanced low-field magnetoresistance (LFMR) of -36% under 0.5 T at 100 K can be obtained due to the enhanced carrier scattering at the vertical grain boundaries between the nanorods for the LCMO films. The growth mechanism of the nanorods has been also discussed, which can be attributed to the variation of deposition rate, adatom surface diffusion, and nucleation induced by the application of a high magnetic field in the film processing. The successful achievements of such vertical nanorod structures will provide an instructive route to investigate the physical nature of these nanostructures and achieve nanodevice manipulation.

Tuning magnetoresistive and magnetocaloric properties via grain boundaries engineering in granular manganites

The effect of interface size on the relative cooling power and magnetoresistive properties of La_0.7Ba_0.3MnO₃ compounds is investigated.

Hierarchically structured nanowires on and nanosticks in ZnO microtubes

We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions.

Electrical transport and giant magnetoresistance in La0.75Sr0.25Mn1-xCrxO3 (0.15, 0.20 and 0.25) manganite oxide

We have investigated the influence of chromium (Cr) doping on the magneto-electrical properties of polycrystalline samples La0.75Sr0.25Mn1-xCrxO3 (0.15 ≤ x ≤ 0.25), prepared by the sol-gel method. Comparison of experimental data with the theoretical models shows that in the metal-ferromagnetic region, the electrical behavior of the three samples is quite well described by a theory based on electron-electron, electron-phonon and electron-magnon scattering and Kondo-like spin dependent scattering. For the high temperature paramagnetic insulating regime, the adiabatic small polaron hopping (SPH) model is found to fit well the experimental curves.

Surface properties of atomically flat poly-crystalline SrTiO3

Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by studying the surface properties of atomically flat poly-crystalline SrTiO₃ (STO), we propose an approach to simultaneously fabricate both single- and poly-crystalline epitaxial TMO thin films on STO substrates. In order to grow TMOs epitaxially with atomic precision, an atomically flat, single-terminated surface of the substrate is a prerequisite. We first examined (100), (110), and (111) oriented single-crystalline STO surfaces, which required different annealing conditions to achieve atomically flat surfaces, depending on the surface energy. A poly-crystalline STO surface was then prepared at the optimum condition for which all the domains with different crystallographic orientations could be successfully flattened. Based on our atomically flat poly-crystalline STO substrates, we envision expansion of the studies regarding the TMO domains and grain boundaries.

Influence of the interface in quantum corrections on the low-temperature resistance of La2/3Sr1/3MnO3 trilayer masking thin films

We report the low temperature resistance upturn is mainly due to the quantum correction effects driven by the weak localization and the electron–electron interaction in such a strongly correlated system, and the contribution of each factor varies with grain boundaries.

The effect of artificial grain boundaries on magneto-transport properties of charge ordered-ferromagnetic nanocomposites

Nanocomposites of charge ordered insulating Pr_0.67Ca_0.33MnO₃(PCMO) and ferromagnetic metallic La_0.67Sr_0.33MnO₃(LSMO) nanoparticles have been prepared by chemical synthesis.

Low temperature magnetic and transport properties of LSMO–PZT nanocomposites

(a) M–H curves of different nanocomposites (NCs) at 80 K. Left and right insets show M vs. H and dM/dH vs. H curves respectively; (b) Magneto-resistance (MR) vs. H curve of different NCs at 200 K. Inset figure shows MR vs. H curve for a typical NC at various temperatures.

Effect of particle size on magnetic and electric transport properties of La0.67Sr0.33MnO3 coatings

The temperature dependent resistivity data fitted through three conduction mechanisms for the LSMO samples were markedly affected by particle sizes.

Multiple magnetic interactions in A-site-ordered perovskite-structure oxides

Multiple magnetic interactions in A-site-ordered perovskite-structure oxides AA'3B2B'2O12 with A'-site Cu and B-site Fe ions are highlighted here. Several new compounds with this structure type were obtained by high-pressure synthesis and have been given unusual magnetic properties due to multiple interactions of Cu and Fe ions (A'-A', A'-B, A'-B', B-B, B-B', and B'-B' interactions). The magnetic interaction is discussed here in light of the results of magnetic structure analysis with neutron powder diffraction data and x-ray magnetic circular dichroism spectra obtained in x-ray absorption experiments. The characteristic structural framework with ordered cation arrangements and the variation in the oxidation state of the ions at the A' and B sites are shown to play roles crucial for the diverse and intriguing physical properties of these new compounds.