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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Lee S, Song MK, Zhang X, Suh JM, Ryu JE, Kim J. Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics. NANO LETTERS 2024. [PMID: 39037750 DOI: 10.1021/acs.nanolett.4c02663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.
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Affiliation(s)
- Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jung-El Ryu
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
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3
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Kang T, Park J, Jung H, Choi H, Lee SM, Lee N, Lee RG, Kim G, Kim SH, Kim HJ, Yang CW, Jeon J, Kim YH, Lee S. High-κ Dielectric (HfO 2)/2D Semiconductor (HfSe 2) Gate Stack for Low-Power Steep-Switching Computing Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312747. [PMID: 38531112 DOI: 10.1002/adma.202312747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2023] [Revised: 02/20/2024] [Indexed: 03/28/2024]
Abstract
Herein, a high-quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (Dit ≈ 5 × 1010 cm-2 eV-1). The chemically converted HfO2 exhibits dielectric constant, κ ≈ 23, resulting in low gate leakage current (≈10-3 A cm-2) at equivalent oxide thickness ≈0.5 nm. Density functional calculations indicate that the atomistic mechanism for achieving a high-quality interface is the possibility of O atoms replacing the Se atoms of the interfacial HfSe2 layer without a substitution energy barrier, allowing layer-by-layer oxidation to proceed. The field-effect-transistor-fabricated HfO2/HfSe2 gate stack demonstrates an almost ideal subthreshold slope (SS) of ≈61 mV dec-1 (over four orders of IDS) at room temperature (300 K), along with a high Ion/Ioff ratio of ≈108 and a small hysteresis of ≈10 mV. Furthermore, by utilizing a device architecture with separately controlled HfO2/HfSe2 gate stack and channel structures, an impact ionization field-effect transistor is fabricated that exhibits n-type steep-switching characteristics with a SS value of 3.43 mV dec-1 at room temperature, overcoming the Boltzmann limit. These results provide a significant step toward the realization of post-Si semiconducting devices for future energy-efficient data-centric computing electronics.
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Affiliation(s)
- Taeho Kang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Joonho Park
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Hanggyo Jung
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Haeju Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sang-Min Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Nayeong Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Ryong-Gyu Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Gahye Kim
- Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Seung-Hwan Kim
- Center for Spintronics, Korea Institute of Science and Technology/Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
| | - Hyung-Jun Kim
- Center for Spintronics, Korea Institute of Science and Technology/Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
| | - Cheol-Woong Yang
- Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jongwook Jeon
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Yong-Hoon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
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4
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Dong C, Lu LS, Lin YC, Robinson JA. Air-Stable, Large-Area 2D Metals and Semiconductors. ACS NANOSCIENCE AU 2024; 4:115-127. [PMID: 38644964 PMCID: PMC11027125 DOI: 10.1021/acsnanoscienceau.3c00047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/16/2023] [Accepted: 12/18/2023] [Indexed: 04/23/2024]
Abstract
Two-dimensional (2D) materials are popular for fundamental physics study and technological applications in next-generation electronics, spintronics, and optoelectronic devices due to a wide range of intriguing physical and chemical properties. Recently, the family of 2D metals and 2D semiconductors has been expanding rapidly because they offer properties once unknown to us. One of the challenges to fully access their properties is poor stability in ambient conditions. In the first half of this Review, we briefly summarize common methods of preparing 2D metals and highlight some recent approaches for making air-stable 2D metals. Additionally, we introduce the physicochemical properties of some air-stable 2D metals recently explored. The second half discusses the air stability and oxidation mechanisms of 2D transition metal dichalcogenides and some elemental 2D semiconductors. Their air stability can be enhanced by optimizing growth temperature, substrates, and precursors during 2D material growth to improve material quality, which will be discussed. Other methods, including doping, postgrowth annealing, and encapsulation of insulators that can suppress defects and isolate the encapsulated samples from the ambient environment, will be reviewed.
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Affiliation(s)
- Chengye Dong
- 2-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
| | - Li-Syuan Lu
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Joshua A. Robinson
- 2-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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5
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Li H, Tan J, Yang S, Sun Y, Yu H. p-Toluenesulfonic Acid Modified Two-Dimensional ZrSe 2 as a Hole Transport Layer for High-Performance Organic Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38624163 DOI: 10.1021/acsami.4c00928] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
Two-dimensional (2D) materials have attracted attention due to their excellent optoelectronic properties, but their applications are limited by their defects and vacancies. Surface modification is an effective method to restore their performance. Here, ZrSe2 is modified with conductive polymer p-toluenesulfonic acid (PTSA). It is found that PTSA can obtain electrons of ZrSe2 through the combination of -SO3H and ZrSe2, thus forming interfacial dipoles, which improve the work function of ZrSe2. In addition, -OH in PTSA can effectively fill the Se vacancy in ZrSe2 to form P-type doping, thereby improving its conductivity. ZrSe2 modified by the PTSA material is first used as a hole transport layer (HTL) in organic solar cells (OSCs). The efficiency of OSCs based on the PBDB-T:ITIC and PM6:L8-BO binary active layer with ZrSe2:PTSA as the novel HTL reaches 10.66 and 18.14%, which are obviously higher than the efficiency of OSCs with pure ZrSe2 as the HTL (8.48 and 15.64%). More interestingly, the stability of the device with ZrSe2:PTSA as HTL is significantly better than that of PEDOT:PSS. This study shows that the modification of the organic material can effectively improve the photoelectric performance of ZrSe2 and explores the physical mechanism of the interaction between the organic modifier and 2D materials.
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Affiliation(s)
- Hongye Li
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
| | - Jingyu Tan
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
| | - Song Yang
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
| | - Yapeng Sun
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
| | - Huangzhong Yu
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China
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Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
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Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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Jing Y, Dai X, Yang J, Zhang X, Wang Z, Liu X, Li H, Yuan Y, Zhou X, Luo H, Zhang D, Sun J. Integration of Ultrathin Hafnium Oxide with a Clean van der Waals Interface for Two-Dimensional Sandwich Heterostructure Electronics. NANO LETTERS 2024; 24:3937-3944. [PMID: 38526847 DOI: 10.1021/acs.nanolett.4c00117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Integrating high-κ dielectrics with a small equivalent oxide thickness (EOT) with two-dimensional (2D) semiconductors for low-power consumption van der Waals (vdW) heterostructure electronics remains challenging in meeting both interface quality and dielectric property requirements. Here, we demonstrate the integration of ultrathin amorphous HfOx sandwiched within vdW heterostructures by the selective thermal oxidation of HfSe2 precursors. The self-cleaning process ensures a high-quality interface with a low interface state density of 1011-1012 cm-2 eV-1. The synthesized HfOx displays excellent dielectric properties with an EOT of ∼1.5 nm, i.e., a high κ of ∼16, an ultralow leakage current of 10-6 A/cm2, and an impressively high breakdown field of 9.5 MV/cm. This facilitates low-power consumption vdW heterostructure MoS2 transistors, demonstrating steep switching with a low subthreshold swing of 61 mV/decade. This one-step integration of high-κ dielectrics into vdW sandwich heterostructures holds immense potential for developing low-power consumption 2D electronics while meeting comprehensive dielectric requirements.
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Affiliation(s)
- Yumei Jing
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xianfu Dai
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Junqiang Yang
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xiaobin Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhongwang Wang
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xiaochi Liu
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Huamin Li
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Yahua Yuan
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xuefan Zhou
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Hang Luo
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Dou Zhang
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Jian Sun
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
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Laukkanen P, Punkkinen M, Kuzmin M, Kokko K, Liu X, Radfar B, Vähänissi V, Savin H, Tukiainen A, Hakkarainen T, Viheriälä J, Guina M. Bridging the gap between surface physics and photonics. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:044501. [PMID: 38373354 DOI: 10.1088/1361-6633/ad2ac9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 02/19/2024] [Indexed: 02/21/2024]
Abstract
Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.
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Affiliation(s)
- Pekka Laukkanen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Marko Punkkinen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Mikhail Kuzmin
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Kalevi Kokko
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Xiaolong Liu
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Behrad Radfar
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Ville Vähänissi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Hele Savin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Antti Tukiainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Teemu Hakkarainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Jukka Viheriälä
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Mircea Guina
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
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9
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Li W, Shen H, Qiu H, Shi Y, Wang X. Two-dimensional semiconductor transistors and integrated circuits for advanced technology nodes. Natl Sci Rev 2024; 11:nwae001. [PMID: 38312376 PMCID: PMC10837103 DOI: 10.1093/nsr/nwae001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Revised: 11/17/2023] [Accepted: 12/28/2023] [Indexed: 02/06/2024] Open
Abstract
This Perspective aims to provide a concise survey of current progress and outlook future directions in high-performance transistors and integrated circuits (ICs) based on 2D semiconductors.
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Affiliation(s)
- Weisheng Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, China
- Suzhou Laboratory, China
- The Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, China
| | | | - Hao Qiu
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, China
- The Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, China
| | - Xinran Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, China
- Suzhou Laboratory, China
- The Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, China
- School of Integrated Circuits, Nanjing University, China
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10
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Zhou H, Li S, Ang KW, Zhang YW. Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials. NANO-MICRO LETTERS 2024; 16:121. [PMID: 38372805 PMCID: PMC10876512 DOI: 10.1007/s40820-024-01335-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 12/25/2023] [Indexed: 02/20/2024]
Abstract
The conventional computing architecture faces substantial challenges, including high latency and energy consumption between memory and processing units. In response, in-memory computing has emerged as a promising alternative architecture, enabling computing operations within memory arrays to overcome these limitations. Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays, rapid response times, and ability to emulate biological synapses. Among these devices, two-dimensional (2D) material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing, thanks to their exceptional performance driven by the unique properties of 2D materials, such as layered structures, mechanical flexibility, and the capability to form heterojunctions. This review delves into the state-of-the-art research on 2D material-based memristive arrays, encompassing critical aspects such as material selection, device performance metrics, array structures, and potential applications. Furthermore, it provides a comprehensive overview of the current challenges and limitations associated with these arrays, along with potential solutions. The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing, leveraging the potential of 2D material-based memristive devices.
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Affiliation(s)
- Hangbo Zhou
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Republic of Singapore.
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Republic of Singapore.
| | - Yong-Wei Zhang
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
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11
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Zhou J, Zhang G, Wang W, Chen Q, Zhao W, Liu H, Zhao B, Ni Z, Lu J. Phase-engineered synthesis of atomically thin te single crystals with high on-state currents. Nat Commun 2024; 15:1435. [PMID: 38365915 PMCID: PMC10873424 DOI: 10.1038/s41467-024-45940-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 02/08/2024] [Indexed: 02/18/2024] Open
Abstract
Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm-1 and a mobility as high as ~ 690.7 cm2 V-1 s-1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm-1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.
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Affiliation(s)
- Jun Zhou
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Guitao Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Wenhui Wang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qian Chen
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Weiwei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Hongwei Liu
- Jiangsu Key Lab on Opto-Electronic Technology, School of Physics and Technology, Nanjing Normal University, 1 Wenyuan Road, Nanjing, 210023, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
| | - Zhenhua Ni
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
| | - Junpeng Lu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
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12
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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13
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Zhu S, Wu J, Zhu P, Pei C, Wang Q, Jia D, Wang X, Zhao Y, Gao L, Li C, Cao W, Zhang M, Zhang L, Li M, Gou H, Yang W, Sun J, Chen Y, Wang Z, Yao Y, Qi Y. Pressure-Induced Superconductivity and Topological Quantum Phase Transitions in the Topological Semimetal ZrTe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2301332. [PMID: 37944509 PMCID: PMC10724415 DOI: 10.1002/advs.202301332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 09/04/2023] [Indexed: 11/12/2023]
Abstract
Topological transition metal dichalcogenides (TMDCs) have attracted much attention due to their potential applications in spintronics and quantum computations. In this work, the structural and electronic properties of topological TMDCs candidate ZrTe2 are systematically investigated under high pressure. A pressure-induced Lifshitz transition is evidenced by the change of charge carrier type as well as the Fermi surface. Superconductivity is observed at around 8.3 GPa without structural phase transition. A typical dome-shape phase diagram is obtained with the maximum Tc of 5.6 K for ZrTe2 . Furthermore, the theoretical calculations suggest the presence of multiple pressure-induced topological quantum phase transitions, which coexists with emergence of superconductivity. The results demonstrate that ZrTe2 with nontrivial topology of electronic states displays new ground states upon compression.
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Affiliation(s)
- Shihao Zhu
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Juefei Wu
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Peng Zhu
- Centre for Quantum PhysicsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of TechnologyBeijing100081China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing100081China
- Material Science CenterYangtze Delta Region Academy of Beijing Institute of TechnologyJiaxing314011China
| | - Cuiying Pei
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Qi Wang
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
- ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai201210China
| | - Donghan Jia
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Xinyu Wang
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Yi Zhao
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Lingling Gao
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Changhua Li
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Weizheng Cao
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Mingxin Zhang
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
| | - Lili Zhang
- Shanghai Synchrotron Radiation FacilityShanghai Advanced Research InstituteChinese Academy of SciencesShanghai201203China
| | - Mingtao Li
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced ResearchShanghai201203China
| | - Jian Sun
- National Laboratory of Solid State MicrostructuresSchool of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
| | - Yulin Chen
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
- ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai201210China
- Department of PhysicsClarendon LaboratoryUniversity of OxfordParks RoadOxfordOX1 3PUUK
| | - Zhiwei Wang
- Centre for Quantum PhysicsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of TechnologyBeijing100081China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing100081China
- Material Science CenterYangtze Delta Region Academy of Beijing Institute of TechnologyJiaxing314011China
| | - Yugui Yao
- Centre for Quantum PhysicsKey Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE)School of PhysicsBeijing Institute of TechnologyBeijing100081China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic SystemsBeijing Institute of TechnologyBeijing100081China
| | - Yanpeng Qi
- School of Physical Science and TechnologyShanghaiTech UniversityShanghai201210China
- ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai201210China
- Shanghai Key Laboratory of High‐resolution Electron MicroscopyShanghaiTech UniversityShanghai201210China
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14
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John JW, Mishra A, Debbarma R, Verzhbitskiy I, Goh KEJ. Probing charge traps at the 2D semiconductor/dielectric interface. NANOSCALE 2023; 15:16818-16835. [PMID: 37842965 DOI: 10.1039/d3nr03453d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps, Dit, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify Dit at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of Dit at 2D semiconductor/dielectric interfaces.
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Affiliation(s)
- John Wellington John
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Abhishek Mishra
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Rousan Debbarma
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Ivan Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
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15
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Hu Y, Jiang J, Zhang P, Ma Z, Guan F, Li D, Qian Z, Zhang X, Huang P. Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios. Nat Commun 2023; 14:6555. [PMID: 37848484 PMCID: PMC10582060 DOI: 10.1038/s41467-023-42312-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Accepted: 10/06/2023] [Indexed: 10/19/2023] Open
Abstract
During the last two decades, two-dimensional (2D) materials have been the focus of condensed matter physics and material science due to their promising fundamental properties and (opto-)electronic applications. However, high-κ 2D dielectrics that can be integrated within 2D devices are often missing. Here, we propose nonlayered oxide monolayers with calculated exfoliation energy as low as 0.39 J/m2 stemming from the ionic feature of the metal oxide bonds. We predict 51 easily or potentially exfoliable oxide monolayers, including metals and insulators/semiconductors, with intriguing physical properties such as ultra-high κ values, negative Poisson's ratios and large valley spin splitting. Among them, the most promising dielectric, GeO2, exhibits an auxetic effect, a κ value of 99, and forms type-I heterostructures with MoSe2 and HfSe2, with a band offset of ~1 eV. Our study opens the way for designing nonlayered 2D oxides, offering a platform for studying the rich physics in ultra-thin oxides and their potential applications in future information technologies.
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Affiliation(s)
- Yue Hu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China.
| | - Jingwen Jiang
- School of Information Engineering, Jiangmen Polytechnic, Jiangmen, China
| | - Peng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China
| | - Zhuang Ma
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
| | - Fuxin Guan
- Department of Physics, University of Hong Kong, Hong Kong, China
| | - Da Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
| | - Zhengfang Qian
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China
| | - Xiuwen Zhang
- College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China.
- Renewable and Sustainable Energy Institute, University of Colorado, Boulder, CO, 80309, USA.
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, China.
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, 518060, Shenzhen, China.
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16
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Keshri SP, Pati SK, Medhi A. HfSe2: Unraveling the microscopic reason for experimental low mobility. J Chem Phys 2023; 159:144704. [PMID: 37811821 DOI: 10.1063/5.0161688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2023] [Accepted: 09/15/2023] [Indexed: 10/10/2023] Open
Abstract
Monolayer HfSe2, in the family of transition metal dichalcogenides (TMDCs), is a potential thermoelectric candidate due to its low thermal conductivity. While its mobility remains low as in other 2D TMDCs is inconceivable for electronic and thermoelectric applications. Earlier theoretical attempts have failed to give justification for the orders of low experimental mobility obtained for monolayer HfSe2. We calculate the carrier mobility in the framework of the density functional perturbation theory in conjunction with the Boltzmann transport equation and correctly ascertain the experimental value. We also calculate the carrier mobility with the previously employed method, the deformation potential (DP) model, to figure out the reason for its failure. We found that it is the strong electron-optical phonon interaction that is causing the low mobility. As the DP model does not account for the optical phonons, it overestimates the relaxation time by an order of two and also underestimates the temperature dependence of mobility. A strong polar type interaction is evidenced as a manifestation of a discontinuity in the first derivative of the optical-phonons at the K and Γ points as well as a dispersive optical phonon at the K point. We also included the spin-orbit coupling which leads to an energy splitting of ∼330 meV and significantly affects mobility and scattering rates.
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Affiliation(s)
- Sonu Prasad Keshri
- Theoretical Sciences Unit, School of Advanced Materials (SAMat) Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, Karnataka 560064, India
| | - Swapan K Pati
- Theoretical Sciences Unit, School of Advanced Materials (SAMat) Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, Karnataka 560064, India
| | - Amal Medhi
- Indian Institute of Science Education and Research, Thiruvananthapuram, Kerala 695551, India
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17
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Wen X, Lei W, Li X, Di B, Zhou Y, Zhang J, Zhang Y, Li L, Chang H, Zhang W. ZrTe 2 Compound Dirac Semimetal Contacts for High-Performance MoS 2 Transistors. NANO LETTERS 2023; 23:8419-8425. [PMID: 37708326 DOI: 10.1021/acs.nanolett.3c01554] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe2 contacts to MoS2 constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe2 and MoS2 was verified. The bilayer MoS2 transistor with a 250 nm channel length on a 20 nm thick hexagonal boron nitride (h-BN) exhibits an ION/IOFF current ratio over 105 and an on-state current of 259 μA μm-1. The current results reveal that 2D compound semimetals with vdW contacts can offer a diverse selection of proper semimetals with adjustable work functions for the next-generation 2D-based beyond-silicon electronics.
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Affiliation(s)
- Xiaokun Wen
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
| | - Wenyu Lei
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
| | - Xinlu Li
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Boyuan Di
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
| | - Ye Zhou
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Jia Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Yuhui Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
| | - Liufan Li
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
| | - Wenfeng Zhang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China
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18
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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19
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Jin Y, Sun J, Zhang L, Yang J, Wu Y, You B, Liu X, Leng K, Liu S. Controllable Oxidation of ZrS 2 to Prepare High-κ, Single-Crystal m-ZrO 2 for 2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212079. [PMID: 36815429 DOI: 10.1002/adma.202212079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2022] [Revised: 01/27/2023] [Indexed: 05/05/2023]
Abstract
High-κ materials that exhibit large permittivity and band gaps are needed as gate dielectrics to enhance capacitance and prevent leakage current in downsized technology nodes. Among these, monoclinic ZrO2 (m-ZrO2 ) shows good potential because of its inertness and high-κ with respect to SiO2 , but a method to produce ultrathin single crystal is lacking. Here, the controllable preparation of ultrathin m-ZrO2 single crystals via the in situ thermal oxidation of ZrS2 is achieved. As-grown m-ZrO2 presents an equivalent oxide thickness of ≈0.29 nm, a high dielectric constant of ≈19, and a breakdown voltage (EBD ) of ≈7.22 MV cm-1 . MoS2 field effect transistor (FET) by using m-ZrO2 as a dielectric layer shows comparable mobility to that using SiO2 dielectric. The ultraclean interface of m-ZrO2 /MoS2 and high crystalline quality of m-ZrO2 lead to negligible hysteresis in transfer curves. Single crystal m-ZrO2 dielectric shows potential application in digital complementary metal oxidesemiconductor (CMOS) logic FET.
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Affiliation(s)
- Yuanyuan Jin
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 100872, P. R. China
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China
| | - Ling Zhang
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Junqiang Yang
- School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China
| | - Yangwu Wu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Bingying You
- Department of Information Technology, Ghent University, Technologiepark-Zwijnaarde 15, Gent, 9052, Belgium
| | - Xiao Liu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Kai Leng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 100872, P. R. China
| | - Song Liu
- State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
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20
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Zhou K, Shang G, Hsu HH, Han ST, Roy VAL, Zhou Y. Emerging 2D Metal Oxides: From Synthesis to Device Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207774. [PMID: 36333890 DOI: 10.1002/adma.202207774] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/26/2022] [Indexed: 05/26/2023]
Abstract
2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.
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Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hsiao-Hsuan Hsu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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21
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Yang S, Liu K, Xu Y, Liu L, Li H, Zhai T. Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207901. [PMID: 36226584 DOI: 10.1002/adma.202207901] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/28/2022] [Indexed: 05/05/2023]
Abstract
2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.
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Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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22
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Wan XQ, Yang CL, Wang MS, Ma XG. Efficient photocatalytic hydrogen evolution and CO 2 reduction by HfSe 2/GaAs 3 and ZrSe 2/GaAs 3 heterostructures with direct Z-schemes. Phys Chem Chem Phys 2023; 25:8861-8870. [PMID: 36916407 DOI: 10.1039/d2cp05902a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023]
Abstract
The elaborate configuration of the heterostructure is crucial and challenging to achieve high solar-to-hydrogen efficiency or CO2 reduction efficiency . Here, we predict two heterostructures composed of HfSe2, ZrSe2, and GaAs3 monolayers. The maximum of 42.71%/35.12% with the heterostructures can be reached with the perfect match between the bandgap and band edges. The configurations of the heterostructures are discovered from 12 possible stacking types of the three monolayers. The formation energy, potentials of band edges, carrier mobilities, and optical absorption were used to identify the feasibility of the CO2 reduction reaction (CO2RR), the hydrogen evolution reaction (HER), and the oxygen evolution reaction (OER). The and based on overpotentials and bandgaps and the Gibbs free energies (ΔGs) are evaluated to quantificationally access the photocatalytic performance of the constructed heterostructures. The results demonstrate that high can be obtained for the solar photocatalytic Z-schemes with the HfSe2/GaAs3 and ZrSe2/GaAs3 heterostructures, and these values can be further enhanced through strain engineering. Moreover, small changes in ΔGs were observed for HER, OER, and CO2RR. Therefore, the two heterostructures have excellent performance in photocatalytic hydrogen evolution and CO2 reduction. The results of the electronic properties revealed that the delicate matching of the projected band edges of the monolayers in the heterostructures is responsible for the high photocatalytic performance.
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Affiliation(s)
- Xue-Qing Wan
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China.
| | - Chuan-Lu Yang
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China.
| | - Mei-Shan Wang
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China.
| | - Xiao-Guang Ma
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China.
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23
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Alsulami A, Alharbi M, Alsaffar F, Alolaiyan O, Aljalham G, Albawardi S, Alsaggaf S, Alamri F, Tabbakh TA, Amer MR. Lattice Transformation from 2D to Quasi 1D and Phonon Properties of Exfoliated ZrS 2 and ZrSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205763. [PMID: 36585385 DOI: 10.1002/smll.202205763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Recent reports on thermal and thermoelectric properties of emerging 2D materials have shown promising results. Among these materials are Zirconium-based chalcogenides such as zirconium disulfide (ZrS2 ), zirconium diselenide (ZrSe2 ), zirconium trisulfide (ZrS3 ), and zirconium triselenide (ZrSe3 ). Here, the thermal properties of these materials are investigated using confocal Raman spectroscopy. Two different and distinctive Raman signatures of exfoliated ZrX2 (where X = S or Se) are observed. For 2D-ZrX2 , Raman modes are in alignment with those reported in literature. However, for quasi 1D-ZrX2 , Raman modes are identical to exfoliated ZrX3 nanosheets, indicating a major lattice transformation from 2D to quasi-1D. Raman temperature dependence for ZrX2 are also measured. Most Raman modes exhibit a linear downshift dependence with increasing temperature. However, for 2D-ZrS2 , a blueshift for A1g mode is detected with increasing temperature. Finally, phonon dynamics under optical heating for ZrX2 are measured. Based on these measurements, the calculated thermal conductivity and the interfacial thermal conductance indicate lower interfacial thermal conductance for quasi 1D-ZrX2 compared to 2D-ZrX2 , which can be attributed to the phonon confinement in 1D. The results demonstrate exceptional thermal properties for Zirconium-based materials, making them ideal for thermoelectric device applications and future thermal management strategies.
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Affiliation(s)
- Awsaf Alsulami
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Majed Alharbi
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Fadhel Alsaffar
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
- Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Olaiyan Alolaiyan
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Ghadeer Aljalham
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Shahad Albawardi
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Sarah Alsaggaf
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Faisal Alamri
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Thamer A Tabbakh
- National Center for Nanotechnology, Materials Science Institute, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
| | - Moh R Amer
- Center of Excellence for Green Nanotechnologies, Joint Centers of Excellence Program, King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA
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24
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Wang X, Chen K, Li Z, Ding H, Song Y, Du S, Chai Z, Gu H, Huang Q. MAX phases Hf2(SexS1−x)C (x = 0–1) and their thermal expansion behaviors. Ann Ital Chir 2022. [DOI: 10.1016/j.jeurceramsoc.2022.12.026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
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25
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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26
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Lu J, Ye Q, Ma C, Zheng Z, Yao J, Yang G. Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology. ACS NANO 2022; 16:12852-12865. [PMID: 35914000 DOI: 10.1021/acsnano.2c05114] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS2/WS2 photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS2 homojunctions by thickness tailoring and the formation of out-of-plane O-WS2/WS2 heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 1011 Jones for an O-WS2/WS2 photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe2 crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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27
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Wang X, Zhang S, Wang Y, Yu S, Huang B, Dai Y, Wei W. Structural engineering brings new electronic properties to Janus ZrSSe and HfSSe monolayers. Phys Chem Chem Phys 2022; 24:17824-17831. [PMID: 35851908 DOI: 10.1039/d2cp01928k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Interfacing effects within emergent two-dimensional (2D) materials are of fundamental interest and are at the center of applications in nanoelectronics. Thus, out-of-plane and in-plane heterostructures as well as electronic heterostructures with phase boundaries and large-angle (60°) grain boundaries (GBs) of Janus ZrSSe and HfSSe are studied in this work using first-principles calculations. The out-of-plane heterostructures of T-ZrSSe and T-HfSSe illustrate quite weak interfacing interactions, thus the electronic properties are, unusually, more like the superposition of individual monolayers. The in-plane heterostructures of T-ZrSSe and T-HfSSe, interestingly, exhibit an indirect-direct band gap transition and type-II band alignment, which correspond to boosted optical properties and spatially separated excitons. For the in-plane electronic heterostructures that are constituted by T-ZrSSe and H-ZrSSe, semiconductor-metal crossover occurs due to the polar discontinuity across the T-H phase boundary, and they behave as one-dimensional metallic wires embedded in otherwise semiconducting Janus ZrSSe, creating a one-dimensional electron/hole gas. This also indicates a strategy for stabilizing the unstable and/or metastable monolayer via the phase boundary. As a result of the zero formal bulk polarization of the T-phase ZrSSe, the metallicity of 60° GBs originates mainly from the edge atoms rather than from the polar discontinuity.
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Affiliation(s)
- Xinxin Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Shuhui Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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28
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Li Y, Chen S, Yu Z, Li S, Xiong Y, Pam ME, Zhang YW, Ang KW. In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeO x /PdSe 2 Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201488. [PMID: 35393702 DOI: 10.1002/adma.202201488] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/23/2022] [Indexed: 06/14/2023]
Abstract
In-memory computing based on memristor arrays holds promise to address the speed and energy issues of the classical von Neumann computing system. However, the stochasticity of ions' transport in conventional oxide-based memristors imposes severe intrinsic variability, which compromises learning accuracy and hinders the implementation of neural network hardware accelerators. Here, these challenges are addressed using a low-voltage memristor array based on an ultrathin PdSeOx /PdSe2 heterostructure switching medium realized by a controllable ultraviolet (UV)-ozone treatment. A distinctively different ions' transport mechanism is revealed in the heterostructure that can confine the formation of conductive filaments, leading to a remarkable uniform switching with low set and reset voltage variability values of 4.8% and -3.6%, respectively. Moreover, convolutional image processing is further implemented using various crossbar kernels that achieve a high recognition accuracy of ≈93.4% due to the highly linear and symmetric analog weight update as well as multiple conductance states, manifesting its potential beyond von Neumann computing.
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Affiliation(s)
- Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Department of Microstructure, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shuai Chen
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Zhigen Yu
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yao Xiong
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Mer-Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yong-Wei Zhang
- Institute for High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore, 138634, Singapore
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29
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Takeuchi H, Urakami N, Hashimoto Y. Oxidation of tantalum disulfide (TaS 2) films for gate dielectric and process design of two-dimensional field-effect device. NANOTECHNOLOGY 2022; 33:375204. [PMID: 35667365 DOI: 10.1088/1361-6528/ac75f9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Accepted: 06/05/2022] [Indexed: 06/15/2023]
Abstract
Ta-based high-κdielectrics can be synthesized via the oxidation of TaS2films. In this study, we investigated the wet and dry oxidation of TaS2films via thermal annealing and plasma irradiation, respectively. The specific vibration observed via Raman spectroscopy, the bonding states observed via x-ray photoelectron spectroscopy, and capacitance measurements confirmed the oxidation of TaS2films with a dielectric constant of ∼14.9. Moreover, the electrical transport of the TaS2films along the in-plane direction indicated a change in conductivity before and after the oxidation. The thickness of the oxidized film was estimated. Accordingly, the layer-by-layer oxidation was limited to approximately 50 nm via plasma irradiation, whereas the TaS2films within 150 nm were fully oxidized via thermal annealing in ambient air. Therefore, a Ta-oxide/TaS2structure was fabricated as a stack material of insulator and metal when the thickness of the pristine film was greater than 50 nm. In addition, Ta-oxide films were integrated into bottom-gated two-dimensional (2D) field-effect transistors (FETs) using the dry transfer method. 2D FETs with multilayer MoTe2and MoS2films asp-type andn-type channels, respectively, were successfully fabricated. In particular, the Ta-oxide film synthesized via dry oxidation was used as a gate dielectric, and the device process could be simplified because the Ta-oxide/TaS2heterostructure can function as a stack material for gate insulators and gate electrodes. An anti-ambipolar transistor consisting of an MoTe2/MoS2heterojunction was also fabricated. For the transfer characteristics, a relatively sharp on-state bias range below 10 V and sufficiently high peak-to-valley ratio of 106atVDS = 3 V were obtained using the high-κ gate dielectric of Ta-oxide despite the presence of the multilayer channels (∼20 nm).
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Affiliation(s)
- Hayate Takeuchi
- Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
| | - Noriyuki Urakami
- Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
| | - Yoshio Hashimoto
- Department of Electrical and Computer Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano 380-8533, Japan
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30
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Xu F, Wu Z, Liu G, Chen F, Guo J, Zhou H, Huang J, Zhang Z, Fei L, Liao X, Zhou Y. Few-Layered MnAl 2S 4 Dielectrics for High-Performance van der Waals Stacked Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25920-25927. [PMID: 35607909 DOI: 10.1021/acsami.2c04477] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The gate dielectric layer is an important component in building a field-effect transistor. Here, we report the synthesis of a layered rhombohedral-structured MnAl2S4 crystal, which can be mechanically exfoliated down to the monolayer limit. The dielectric properties of few-layered MnAl2S4 flakes are systematically investigated, whereby they exhibit a relative dielectric constant of over 6 and an electric breakdown field of around 3.9 MV/cm. The atomically smooth thin MnAl2S4 flakes are then applied as a dielectric top gate layer to realize a two-dimensional van der Waals stacked field-effect transistor, which uses MoS2 as a channel material. The fabricated transistor can be operated at a small drain-source voltage of 0.1 V and gate voltages within ranges of ±2 V, which exhibit a large on-off ratio over 107 at 0.5 V and a low subthreshold swing value of 80 mV/dec. Our work demonstrates that the few-layered MnAl2S4 can work as a dielectric layer to realize high-performance two-dimensional transistors, and thus broadens the research on high-κ 2D materials and may provide new opportunities in developing low-dimensional electronic devices with a low power consumption in the future.
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Affiliation(s)
- Fang Xu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Ziyu Wu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Guangjian Liu
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Feng Chen
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Junqing Guo
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Hua Zhou
- School of Physics, Shandong University, Shandanan Street 27, 250100 Jinan, P. R. China
| | - Jiawei Huang
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Zhouyang Zhang
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Xiaxia Liao
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
- Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Two-Dimensional Materials, Nanchang University, Nanchang, Jiangxi, 330031, People's Republic of China
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Li S, Yang S, Li K, Lai Y, Deng C, Wang C. Electrodissolution-Coupled Hafnium Alkoxide Synthesis with High Environmental and Economic Benefits. CHEMSUSCHEM 2022; 15:e202200474. [PMID: 35365962 DOI: 10.1002/cssc.202200474] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2022] [Revised: 03/31/2022] [Indexed: 06/14/2023]
Abstract
The conventional thermal method of preparing hafnium alkoxides [Hf(OR)4 , R=alkyl] - excellent precursors for gate-dielectric HfO2 on semiconductors - is severely hindered by its unsatisfactory environmental and economic burdens. Herein, we propose a promising electrodissolution-coupled Hf(OR)4 synthesis (EHS) system for green and efficient electrosynthesis of Hf(OR)4 . The operational principle of the electrically driven system consists of two simultaneous heterogeneous reactions of Hf dissolution and alcohol dehydrogenation, plus a spontaneous solution-based combination reaction. In applying ethanol as solvent and Hf metal as electrodissolution medium, we achieved waste-free production of high-purity hafnium ethoxide [Hf(OEt)4 ] with an equivalent "a concomitant" reduction in CO2 emission of 187.33 g CO2 per kg Hf(OEt)4 and a high net profit of 30 477 USD per kg Hf(OEt)4 . This system is very competitive with the thermal process, which unavoidably releases substantial waste and CO2 for a net profit of 27 700 USD per kg Hf(OEt)4 . We anticipate that the environmental and economic benefits of the EHS process could pave the way for its practical application.
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Affiliation(s)
- Shuai Li
- School of Metallurgy and Environment, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Shenghai Yang
- School of Metallurgy and Environment, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Kangkang Li
- CSIRO Energy, 10 Murray Dwyer Circuit, Mayfield West, New South Wales, 2304, Australia
| | - Yanqing Lai
- School of Metallurgy and Environment, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Chaoyong Deng
- Ximei Resources Limited Company, Guangzhou, Guangdong, 511449, P. R. China
| | - Changhong Wang
- School of Metallurgy and Environment, Central South University, Changsha, Hunan, 410083, P. R. China
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Abstract
Layered van der Waals (vdW) materials have attracted significant attention due to their materials properties that can enhance diverse applications including next-generation computing, biomedical devices, and energy conversion and storage technologies. This class of materials is typically studied in the two-dimensional (2D) limit by growing them directly on bulk substrates or exfoliating them from parent layered crystals to obtain single or few layers that preserve the original bonding. However, these vdW materials can also function as a platform for obtaining additional phases of matter at the nanoscale. Here, we introduce and review a synthesis paradigm, morphotaxy, where low-dimensional materials are realized by using the shape of an initial nanoscale precursor to template growth or chemical conversion. Using morphotaxy, diverse non-vdW materials such as HfO2 or InF3 can be synthesized in ultrathin form by changing the composition but preserving the shape of the original 2D layered material. Morphotaxy can also enable diverse atomically precise heterojunctions and other exotic structures such as Janus materials. Using this morphotaxial approach, the family of low-dimensional materials can be substantially expanded, thus creating vast possibilities for future fundamental studies and applied technologies.
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Affiliation(s)
- David Lam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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Jia L, Chen J, Cui X, Wang Z, Zeng W, Zhou Q. Gas Sensing Mechanism and Adsorption Properties of C2H4 and CO Molecules on the Ag3–HfSe2 Monolayer: A First-Principle Study. Front Chem 2022; 10:911170. [PMID: 35646821 PMCID: PMC9133379 DOI: 10.3389/fchem.2022.911170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2022] [Accepted: 04/13/2022] [Indexed: 11/22/2022] Open
Abstract
The detection of dissolved gases in oil is an important method for the analysis of transformer fault diagnosis. In this article, the potential-doped structure of the Ag3 cluster on the HfSe2 monolayer and adsorption behavior of CO and C2H4 upon Ag3–HfSe2 were studied theoretically. Herein, the binding energy, adsorption energy, band structure, density of state (DOS), partial density of state (PDOS), Mulliken charge analysis, and frontier molecular orbital were investigated. The results showed that the adsorption effect on C2H4 is stronger than that on CO. The electrical sensitivity and anti-interference were studied based on the bandgap and adsorption energy of gases. In particular, there is an increase of 55.49% in the electrical sensitivity of C2H4 after the adsorption. Compared to the adsorption energy of different gases, it was found that only the adsorption of the C2H4 system is chemisorption, while that of the others is physisorption. It illustrates the great anti-interference in the detection of C2H4. Therefore, the study explored the potential of HfSe2-modified materials for sensing and detecting CO and C2H4 to estimate the working state of power transformers.
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Affiliation(s)
- Lufen Jia
- College of Engineering and Technology, Southwest University, Chongqing, China
| | - Jianxing Chen
- College of Engineering and Technology, Southwest University, Chongqing, China
| | - Xiaosen Cui
- College of Engineering and Technology, Southwest University, Chongqing, China
| | - Zhongchang Wang
- Department of Quantum and Energy Materials, International Iberian Nanotechnology Laboratory (INL), Braga, Portugal
- School of Materials and Energy, Southwest University, Chongqing, China
| | - Wen Zeng
- College of Materials Science and Engineering, Chongqing University, Chongqing, China
- *Correspondence: Qu Zhou, ; Wen Zeng,
| | - Qu Zhou
- College of Engineering and Technology, Southwest University, Chongqing, China
- *Correspondence: Qu Zhou, ; Wen Zeng,
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Abstract
The quest for a clean, renewable and sustainable energy future has been highly sought for by the scientific community over the last four decades. Photocatalytic water splitting is a very promising technology to proffer a solution to present day environmental pollution and energy crises by generating hydrogen fuel through a “green route” without environmental pollution. Transition metal dichalcogenides (TMDCs) have outstanding properties which make them show great potential as effective co-catalysts with photocatalytic materials such as TiO2, ZnO and CdS for photocatalytic water splitting. Integration of TMDCs with a photocatalyst such as TiO2 provides novel nanohybrid composite materials with outstanding characteristics. In this review, we present the current state of research in the application of TMDCs in photocatalytic water splitting. Three main aspects which consider their properties, advances in the synthesis routes of layered TMDCs and their composites as well as their photocatalytic performances in the water splitting reaction are discussed. Finally, we raise some challenges and perspectives in their future application as materials for water-splitting photocatalysts.
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35
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Ledneva AY, Chebanova GE, Artemkina SB, Lavrov AN. CRYSTALLINE AND NANOSTRUCTURED MATERIALS BASED ON TRANSITION METAL DICHALCOGENIDES: SYNTHESIS AND ELECTRONIC PROPERTIES. J STRUCT CHEM+ 2022. [DOI: 10.1134/s0022476622020020] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Shao J, Zhang Y, Huang Z, Wang L, Liu T, Zhang N, Hu H. High-performance unbiased Ge metal-semiconductor-metal photodetector covered with asymmetric HfSe 2 contact geometries. APPLIED OPTICS 2022; 61:1778-1783. [PMID: 35297858 DOI: 10.1364/ao.450947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 02/04/2022] [Indexed: 06/14/2023]
Abstract
A Ge metal-semiconductor-metal photodetector covered with asymmetric HfSe2 contact geometries has been proposed to realize high-performance unbiased photodetection at 1550 nm. At -1 V bias, the responsivity of this device shows a 71% improvement compared to the device without HfSe2. Moreover, the responsivity and detectivity of this device at zero bias can reach to 71.2 mA/W and 3.27×1010 Jones, respectively. Furthermore, the fall time of this device is 2.2 µs and 53% shorter than the device without HfSe2. This work provides a feasible way to develop unbiased Ge-based photodetectors in the near-IR communications band.
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Wu S, Zhang M, Huang S, Cai L, He D, Liu Y. Vacancy-enhanced Mo-N2 interaction in MoSe2 nanosheets enables efficient electrocatalytic NH3 synthesis. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.03.005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 106] [Impact Index Per Article: 53.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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Ren MQ, Han S, Fan JQ, Wang L, Wang P, Ren W, Peng K, Li S, Wang SZ, Zheng FW, Zhang P, Li F, Ma X, Xue QK, Song CL. Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1 T-ZrX 2 (X = Se, Te) at the Two-Dimensional Limit. NANO LETTERS 2022; 22:476-484. [PMID: 34978815 DOI: 10.1021/acs.nanolett.1c04372] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX2 (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX2 films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.
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Affiliation(s)
- Ming-Qiang Ren
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Sha Han
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jia-Qi Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Li Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Pengdong Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Wei Ren
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Kun Peng
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Shujing Li
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Shu-Ze Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Fa-Wei Zheng
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, People's Republic of China
| | - Ping Zhang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Fangsen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Xucun Ma
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing 100084, People's Republic of China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing 100084, People's Republic of China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
| | - Can-Li Song
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing 100084, People's Republic of China
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41
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Jahn YM, Ya'akobovitz A. Outstanding stretchability and thickness-dependent mechanical properties of 2D HfS 2, HfSe 2, and hafnium oxide. NANOSCALE 2021; 13:18458-18466. [PMID: 34608919 DOI: 10.1039/d1nr04240h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We experimentally determine the elastic properties of 2D HfS2 and HfSe2 - two emerging nano-materials whose moderate energy bandgap and dielectric oxidized layer make them highly attractive for functional electronic and optoelectronic systems. We found that the average Young's moduli of HfS2 and HfSe2 nano-drumheads are relatively low (45.3 ± 3.7 GPa for a 12.2 nm thick HfS2 and 39.3 ± 8.9 GPa for a 13.4 nm thick HfSe2) and depend on the thickness of the nano-drumhead (increasing with thickness for HfS2 and decreasing for HfSe2). Moreover, both materials demonstrate outstanding stretchability (fracture strength and maximal strain of 5.7 ± 0.4 GPa and 12.2-14.3%, respectively, for HfS2; fracture strength and maximal strain of 4.5 ± 1.4 GPa and 14.0-20.9%, respectively, for HfSe2), which far exceeds the stretchability of other 2D materials and of polymers that are commonly used in flexible electronic applications. Finally, we describe the controlled oxidation of HfSe2 using a relatively simple laser treatment, which increased the Young's moduli of the thin oxidized layers to 182.6 ± 54.3 GPa. The extraordinary elastic properties of HfS2 and HfSe2, together with their excellent electrical and optoelectrical properties, make these 2D materials highly attractive for use in strain engineering and in various stretchable electronic and optoelectronic applications, such as wearable devices.
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Affiliation(s)
- Yarden Mazal Jahn
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Israel.
| | - Assaf Ya'akobovitz
- Department of Mechanical Engineering, Faculty of Engineering Sciences, Ben-Gurion University of the Negev, Israel.
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42
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Chang YR, Nishimura T, Nagashio K. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43282-43289. [PMID: 34478258 DOI: 10.1021/acsami.1c13279] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Surface oxidation is an unneglectable problem for 2D semiconductors because it hinders the practical application of 2D material-based devices. In this research, the oxidation of layered materials is investigated by a thermodynamic approach to verify their oxidation tendency. It was found that almost all 2D materials are thermodynamically unstable in the presence of oxygen at room temperature. Two potential solutions for surface oxidation are proposed in this work: (i) the conversion of the surface oxides to functional oxides through the deposition of active metals and (ii) the recovery of original 2D materials from the surface oxides by 2D material heterostructure formation with the same chalcogen group. Supported by thermodynamic calculations, both approaches are feasible to ameliorate the surface oxides of 2D materials by the appropriate selection of metals for deposition or 2D materials for heterostructure formation. Thermodynamic data of 64 elements and 75 2D materials are included and compared in this research, which can improve gate insulator or electrode contact material selection in 2D devices to solve the surface oxidation issue. For instance, yttrium and titanium are good candidates for surface oxide conversion, while zirconium and hafnium chalcogenide can trigger the recovery of original 2D materials from their surface oxides. The systematic diagrams presented in this work can serve as a guideline for considering surface oxidation in future device fabrication from various 2D materials.
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Affiliation(s)
- Yih-Ren Chang
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Liu L, Li Y, Huang X, Chen J, Yang Z, Xue K, Xu M, Chen H, Zhou P, Miao X. Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe 2 for In-Memory Computing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2005038. [PMID: 34050639 PMCID: PMC8336485 DOI: 10.1002/advs.202005038] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2020] [Revised: 03/30/2021] [Indexed: 05/09/2023]
Abstract
Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off-state current. To this end, a crossbar device using 2D HfSe2 is fabricated, and then the top layers are oxidized into "high-k" dielectric HfSex Oy via oxygen plasma treatment, so that the cell resistance can be remarkably increased. This two-terminal Ti/HfSex Oy /HfSe2 /Au device exhibits excellent forming-free resistive switching performance with high switching speed (<50 ns), low operation voltage (<3 V), large switching window (103 ), and good data retention. Most importantly, the operation current and the power consumption reach 100 pA and 0.1 fJ to 0.1 pJ, much lower than other HfO based memristors. A functionally complete low-power Boolean logic is experimentally demonstrated using the memristive device, allowing it in the application of energy-efficient in-memory computing.
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Affiliation(s)
- Long Liu
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Yi Li
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Xiaodi Huang
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Jia Chen
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Zhe Yang
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Kan‐Hao Xue
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Ming Xu
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Huawei Chen
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Peng Zhou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Xiangshui Miao
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
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Brune V, Grosch M, Weißing R, Hartl F, Frank M, Mishra S, Mathur S. Influence of the choice of precursors on the synthesis of two-dimensional transition metal dichalcogenides. Dalton Trans 2021; 50:12365-12385. [PMID: 34318836 DOI: 10.1039/d1dt01397a] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The interest in transition metal dichalcogenides (TMDCs; MEy/2; M = transition metal; E = chalcogenide, y = valence of the metal) has grown exponentially across various science and engineering disciplines due to their unique structural chemistry manifested in a two-dimensional lattice that results in extraordinary electronic and transport properties desired for applications in sensors, energy storage and optoelectronic devices. Since the properties of TMDCs can be tailored by changing the stacking sequence of 2D monolayers with similar or dis-similar materials, a number of synthetic routes essentially based on the disintegration of bulk (e.g., chemical exfoliation) or the integration of atomic constituents (e.g., vapor phase growth) have been explored. Despite a large body of data available on the chemical synthesis of TMDCs, experimental strategies with high repeatability of control over film thickness, phase and compositional purity remain elusive, which calls for innovative synthetic concepts offering, for instance, self-limited growth in the z-direction and homogeneous lateral topography. This review summarizes the recent conceptual advancements in the growth of layered van der Waals TMDCs from both mixtures of metal and chalcogen sources (multi-source precursors; MSPs) and from molecular compounds containing metals and chalcogens in one starting material (single-source precursor; SSPs). The critical evaluation of the strengths, limitations and opportunities of MSP and SSP approaches is provided as a guideline for the fabrication of TMDCs from commercial and customized molecular precursors. For example, alternative synthetic pathways using tailored molecular precursors circumvent the challenges of differential nucleation and crystal growth kinetics that are invariably associated with conventional gas phase chemical vapor transport (CVT) and chemical vapor deposition (CVD) of a mixture of components. The aspects of achieving high compositional purity and alternatives to minimize competing reactions or side products are discussed in the context of efficient chemical synthesis of TMDCs. Moreover, a critical analysis of the potential opportunities and existing bottlenecks in the synthesis of TMDCs and their intrinsic properties is provided.
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Affiliation(s)
- Veronika Brune
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Matthias Grosch
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - René Weißing
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Fabian Hartl
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Michael Frank
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
| | - Shashank Mishra
- Université Claude Bernard Lyon 1, CNRS, UMR 5256, IRCELYON, 2 avenue Albert Einstein, 69626 Villeurbanne, France.
| | - Sanjay Mathur
- Institute of Inorganic Chemistry, University of Cologne, Greinstraße 6, D-50939 Cologne, Germany.
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Chen K, Bai X, Mu X, Yan P, Qiu N, Li Y, Zhou J, Song Y, Zhang Y, Du S, Chai Z, Huang Q. MAX phase Zr2SeC and its thermal conduction behavior. Ann Ital Chir 2021. [DOI: 10.1016/j.jeurceramsoc.2021.03.013] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Wang B, Peng R, Wang X, Yang Y, Wang E, Xin Z, Sun Y, Li C, Wu Y, Wei J, Sun J, Liu K. Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix. ACS NANO 2021; 15:10502-10513. [PMID: 34009934 DOI: 10.1021/acsnano.1c03050] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Vanadium dioxide (VO2) is a strongly correlated electronic material and has attracted significant attention due to its metal-to-insulator transition and diverse smart applications. Traditional synthesis of VO2 usually requires minutes or hours of global heating and low oxygen partial pressure to achieve thermodynamic control of the valence state. Further patterning of VO2 through a series of lithography and etching processes may inevitably change its surface valence, which poses a great challenge for the assembly of micro- and nanoscale VO2-based heterojunction devices. Herein, we report an ultrafast method to simultaneously synthesize and pattern VO2 on the time scale of seconds under ambient conditions through laser direct writing on a V5S8 "canvas". The successful ambient synthesis of VO2 is attributed to the ultrafast local heating and cooling process, resulting in controlled freezing of the intermediate oxidation phase during the relatively long kinetic reaction. A Mott memristor based on a V5S8-VO2-V5S8 lateral heterostructure can be fabricated and integrated with a MoS2 channel, delivering a transistor with abrupt switching transfer characteristics. The other device with a VSxOy channel exhibits a large negative temperature coefficient of approximately 4.5%/K, which is highly desirable for microbolometers. The proposed approach enables fast and efficient integration of VO2-based heterojunction devices and is applicable to other intriguing intermediate phases of oxides.
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Affiliation(s)
- Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Xuewen Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yueyang Yang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jinquan Wei
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jingbo Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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Jin T, Zheng Y, Gao J, Wang Y, Li E, Chen H, Pan X, Lin M, Chen W. Controlling Native Oxidation of HfS 2 for 2D Materials Based Flash Memory and Artificial Synapse. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10639-10649. [PMID: 33606512 DOI: 10.1021/acsami.0c22561] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) materials based artificial synapses are important building blocks for the brain-inspired computing systems that are promising in handling large amounts of informational data with high energy-efficiency in the future. However, 2D devices usually rely on deposited or transferred insulators as the dielectric layer, resulting in various challenges in device compatibility and fabrication complexity. Here, we demonstrate a controllable and reliable oxidation process to turn 2D semiconductor HfS2 into native oxide, HfOx, which shows good insulating property and clean interface with HfS2. We then incorporate the HfOx/HfS2 heterostructure into a flash memory device, achieving a high on/off current ratio of ∼105, a large memory window over 60 V, good endurance, and a long retention time over 103 seconds. In particular, the memory device can work as an artificial synapse to emulate basic synaptic functions and feature good linearity and symmetry in conductance change during long-term potentiation/depression processes. A simulated artificial neural network based on our synaptic device achieves a high accuracy of ∼88% in MNIST pattern recognition. Our work provides a simple and effective approach for integrating high-k dielectrics into 2D material-based memory and synaptic devices.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Yue Zheng
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Yanan Wang
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, P. R. China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, P. R. China
| | - Xuan Pan
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency of Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, #08-03, Innovis 138634, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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48
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Promises and prospects of two-dimensional transistors. Nature 2021; 591:43-53. [PMID: 33658691 DOI: 10.1038/s41586-021-03339-z] [Citation(s) in RCA: 300] [Impact Index Per Article: 100.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 12/14/2020] [Indexed: 01/31/2023]
Abstract
Two-dimensional (2D) semiconductors have attracted tremendous interest as atomically thin channels that could facilitate continued transistor scaling. However, despite many proof-of-concept demonstrations, the full potential of 2D transistors has yet to be determined. To this end, the fundamental merits and technological limits of 2D transistors need a critical assessment and objective projection. Here we review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking 2D transistors. We suggest that the saturation or on-state current density, especially in the short-channel limit, could provide a more reliable measure for assessing the potential of diverse 2D semiconductors, and should be applied for cross-checking different studies, especially when milestone performance metrics are claimed. We also summarize the key technical challenges in optimizing the channels, contacts, dielectrics and substrates and outline potential pathways to push the performance limit of 2D transistors. We conclude with an overview of the critical technical targets, the key technological obstacles to the 'lab-to-fab' transition and the potential opportunities arising from the use of these atomically thin semiconductors.
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Andrada-Chacón A, Morales-García Á, Salvadó MA, Pertierra P, Franco R, Garbarino G, Taravillo M, Barreda-Argüeso JA, González J, García Baonza V, Recio JM, Sánchez-Benítez J. Pressure-Driven Metallization in Hafnium Diselenide. Inorg Chem 2021; 60:1746-1754. [PMID: 33449624 DOI: 10.1021/acs.inorgchem.0c03223] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The quest for new transition metal dichalcogenides (TMDs) with outstanding electronic properties operating under ambient conditions draws us to investigate the 1T-HfSe2 polytype under hydrostatic pressure. Diamond anvil cell (DAC) devices coupled to in situ synchrotron X-ray, Raman, and optical (VIS-NIR) absorption experiments along with density functional theory (DFT)-based calculations prove that (i) bulk 1T-HfSe2 exhibits strong structural and vibrational anisotropies, being the interlayer direction especially sensitive to pressure changes, (ii) the indirect gap of 1T-HfSe2 tends to vanish by a -0.1 eV/GPa pressure rate, slightly faster than MoS2 or WS2, (iii) the onset of the metallic behavior appears at Pmet ∼10 GPa, which is to date the lowest pressure among common TMDs, and finally, (iv) the electronic transition is explained by the bulk modulus B0-Pmet correlation, along with the pressure coefficient of the band gap, in terms of the electronic overlap between chalcogenide p-type and metal d-type orbitals. Overall, our findings identify 1T-HfSe2 as a new efficient TMD material with potential multipurpose technological applications.
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Affiliation(s)
- Adrián Andrada-Chacón
- MALTA-Consolider Team, Departamento de Química Física, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Madrid 28040, Spain
| | - Ángel Morales-García
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès, 1-11, Barcelona 08028, Spain
| | - Miguel A Salvadó
- MALTA-Consolider Team, Departamento de Química Física y Analítica, Universidad de Oviedo, Oviedo 33006, Spain
| | - Pilar Pertierra
- MALTA-Consolider Team, Departamento de Química Física y Analítica, Universidad de Oviedo, Oviedo 33006, Spain
| | - Ruth Franco
- MALTA-Consolider Team, Departamento de Química Física y Analítica, Universidad de Oviedo, Oviedo 33006, Spain
| | - Gastón Garbarino
- European Synchrotron Radiation Facility, BP 220, 6 Rue Jules Horowitz, Cedex 9, Grenoble 38043, France
| | - Mercedes Taravillo
- MALTA-Consolider Team, Departamento de Química Física, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Madrid 28040, Spain
| | | | - Jesús González
- MALTA-Consolider Team, CITIMAC, Universidad de Cantabria, Santander 39005, Spain
| | - Valentín García Baonza
- MALTA-Consolider Team, Departamento de Química Física, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Madrid 28040, Spain
| | - J Manuel Recio
- MALTA-Consolider Team, Departamento de Química Física y Analítica, Universidad de Oviedo, Oviedo 33006, Spain
| | - Javier Sánchez-Benítez
- MALTA-Consolider Team, Departamento de Química Física, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Madrid 28040, Spain
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50
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Faraji M, Bafekry A, Gogova D, Hoat DM, Ghergherehchi M, Chuong NV, Feghhi SAH. Novel two-dimensional ZnO2, CdO2 and HgO2 monolayers: a first-principles-based prediction. NEW J CHEM 2021. [DOI: 10.1039/d1nj01610e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
In this paper, the existence of monolayers with the chemical formula XO2, where X = Zn, Cd, and Hg with hexagonal and tetragonal lattice structures is theoretically predicted by means of first principles calculations.
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Affiliation(s)
- M. Faraji
- Micro and Nanotechnology Graduate Program
- TOBB University of Economics and Technology
- Ankara
- Turkey
| | - A. Bafekry
- Department of Radiation Application
- Shahid Beheshti University
- Tehran 1983969411
- Iran
- Department of Physics, University of Antwerp
| | - D. Gogova
- Department of Physics
- University of Oslo
- Blindern
- Norway
| | - D. M. Hoat
- Institute of Theoretical and Applied Research
- Duy Tan University
- Hanoi 100000
- Vietnam
- Faculty of Natural Sciences
| | - M. Ghergherehchi
- College of Electronic and Electrical Engineering
- Sungkyunkwan University
- Suwon
- Korea
| | - N. V. Chuong
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Hanoi 100000
- Vietnam
| | - S. A. H. Feghhi
- Department of Radiation Application
- Shahid Beheshti University
- Tehran 1983969411
- Iran
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