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Nong Y, Yao J, Li J, Xu L, Yang Z, Wang S, Song J. Gradient Hole Injection Inducing Efficient Exciton Recombination in Blue (475 nm) Perovskite QLEDs. NANO LETTERS 2024. [PMID: 39442008 DOI: 10.1021/acs.nanolett.4c02600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2024]
Abstract
Perovskite quantum dots (QDs) are emerging as excellent light sources for light-emitting diodes (LEDs). However, the performance of blue perovskite QD-based LEDs (QLEDs) still lags behind that of red and green counterparts, which is hindered by blue perovskite QDs with broad bandgaps that tend to increase nonradiative recombination. Here, we designed a gradient energy for hole injection utilizing multiple hole injection layers (HTLs) combined with carbazole-based small-molecule modification to reduce the hole injection barrier between HTLs and QD layers and improve the hole injection efficiency, realizing efficient exciton recombination in blue perovskite QLEDs. Moreover, the QD film on the designed HTLs demonstrates a lower surface roughness and improved photoluminescence properties. The optimized blue CsPbCl3-xBrx QLEDs exhibit an impressive external quantum efficiency of 20.7% with an electroluminescence peak at 475 nm and a turn-on voltage of 2.6 V, representing the state-of-the-art for blue perovskite LEDs emitting in the range of 460-480 nm.
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Affiliation(s)
- Yingyi Nong
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
| | - Jisong Yao
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
| | - Jiaqi Li
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
| | - Leimeng Xu
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
| | - Zhi Yang
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
| | - Shalong Wang
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
| | - Jizhong Song
- Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Zhengzhou 450051, China
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2
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Li Y, Guan X, Zhao Y, Zhang Q, Chen X, Zhang S, Lu J, Wei Z. Modulation of Charge Transport Layer for Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410535. [PMID: 39443833 DOI: 10.1002/adma.202410535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2024] [Revised: 09/03/2024] [Indexed: 10/25/2024]
Abstract
Perovskite light-emitting diodes (Pero-LEDs) have garnered significant attention due to their exceptional emission characteristics, including narrow full width at half maximum, high color purity, and tunable emission colors. Recent efficiency and operational stability advancements have positioned Pero-LEDs as a promising next-generation display technology. Extensive research and review articles on the compositional engineering and defect passivation of perovskite layers have substantially contributed to the development of multi-color and high-efficiency Pero-LEDs. However, the crucial aspect of charge transport layer (CTL) modulation in Pero-LEDs remains relatively underexplored. CTL modulation not only impacts the charge carrier transport efficiency and injection balance but also plays a critical role in passivating the perovskite surface, blocking ion migration, enhancing perovskite crystallinity, and improving light extraction efficiency. Therefore, optimizing CTLs is pivotal for further enhancing Pero-LED performance. Herein, this review discusses the roles of CTLs in Pero-LEDs and categorizes both reported and potential CTL materials. Then, various CTL optimization strategies are presented, alongside an analysis of the selection criteria for CTLs in high-performance Pero-LEDs. Finally, a summary and outlook on the potential of CTL modulation to further advance Pero-LED performances are provided.
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Affiliation(s)
- Yuqing Li
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xiang Guan
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Yaping Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Qin Zhang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Xi Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Shaopeng Zhang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Jianxun Lu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
- Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology, Thuwal, 23955, Kingdom of Saudi Arabia
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
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3
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Wang Y, Liu ZS, Zhao F, Liu WZ, Shen WS, Zhou DY, Wang YK, Liao LS. Ligand-Solvent Coordination Enables Comprehensive Trap Passivation for Efficient Near-Infrared Quantum Dot Light-Emitting Diodes. Angew Chem Int Ed Engl 2024; 63:e202407833. [PMID: 38984901 DOI: 10.1002/anie.202407833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Revised: 07/05/2024] [Accepted: 07/09/2024] [Indexed: 07/11/2024]
Abstract
Near-infrared light-emitting diodes (NIR LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiency (EQE) of ~15 %. However, these high-performance NIR-QLEDs suffer from immediate carrier quenching because of the accumulation of migratable ions at the surface of the QDs. These uncoordinated ions and carriers-if not bound to the nanocrystal surface-serve as centers for exciton quenching and device degradation. In this work, we overcome this issue and fabricate high-performance NIR QLEDs by devising a ligand anchoring strategy, which entails dissolving the strong-binding ligand (Guanidine Hydroiodide, GAI) in the mediate-polar solvent. By employing the dye-sensitized device structure (phosphorescent indicator), we demonstrate the elimination of the interface defects. The treated QDs films exhibit an exciton binding energy of 117 meV: this represents a 1.5-fold increase compared to that of the control (74 meV). We report, as a result, the NIR QLEDs with an EQE of 21 % which is a record among NIR perovskite QLEDs. These QLEDs also exhibit a 7-fold higher operational stability than that of the best previously reported NIR QLEDs. Furthermore, we demonstrate that the QDs are compatible with large-area QLEDs: we showcase 900 mm2 QLEDs with EQE approaching 20 %.
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Affiliation(s)
- Ye Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Zong-Shuo Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Feng Zhao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Wei-Zhi Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Wan-Shan Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Dong-Ying Zhou
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Ya-Kun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for, Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, 999078, Macau, China
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Qi H, Tong Y, Zhang X, Wang H, Zhang L, Chen Y, Wang Y, Shang J, Wang K, Wang H. Homogenizing Energy Landscape for Efficient and Spectrally Stable Blue Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2409319. [PMID: 39302002 DOI: 10.1002/adma.202409319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2024] [Revised: 09/05/2024] [Indexed: 09/22/2024]
Abstract
Blue perovskite light-emitting diodes (PeLEDs) have attracted enormous attention; however, their unsatisfactory device efficiency and spectral stability still remain great challenges. Unfavorable low-dimensional phase distribution and defects with deeper energy levels usually cause energy disorder, substantially limiting the device's performance. Here, an additive-interface optimization strategy is reported to tackle these issues, thus realizing efficient and spectrally stable blue PeLEDs. A new type of additive-formamidinium tetrafluorosuccinate (FATFSA) is introduced into the quasi-2D mixed halide perovskite accompanied by interface engineering, which effectively impedes the formation of undesired low-dimensional phases with various bandgaps throughout the entire film, thereby boosting energy transfer process for accelerating radiative recombination; this strategy also diminishes the halide vacancies especially chloride-related defects with deep energy level, thus reducing nonradiative energy loss for efficient radiative recombination. Benefitting from homogenized energy landscape throughout the entire perovskite emitting layer, PeLEDs with spectrally-stable blue emission (478 nm) and champion external quantum efficiency (EQE) of 21.9% are realized, which represents a record value among this type of PeLEDs in the pure blue region.
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Affiliation(s)
- Heng Qi
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yu Tong
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Xuewen Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Hao Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lu Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education, School of Materials Science Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Yali Chen
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yibo Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jingzhi Shang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Kun Wang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Hongqiang Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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Zhang Q, Zhang D, Liao Z, Cao YB, Kumar M, Poddar S, Han J, Hu Y, Lv H, Mo X, Srivastava AK, Fan Z. Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405418. [PMID: 39183527 DOI: 10.1002/adma.202405418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 06/22/2024] [Indexed: 08/27/2024]
Abstract
Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).
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Affiliation(s)
- Qianpeng Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zebing Liao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Bryan Cao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Mallem Kumar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Junchao Han
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Ying Hu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Hualiang Lv
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Abhishek Kumar Srivastava
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
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6
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Zhang Y, Abdi-Jalebi M, Larson BW, Zhang F. What Matters for the Charge Transport of 2D Perovskites? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404517. [PMID: 38779825 DOI: 10.1002/adma.202404517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Compared to 3D perovskites, 2D perovskites exhibit excellent stability, structural diversity, and tunable bandgaps, making them highly promising for applications in solar cells, light-emitting diodes, and photodetectors. However, the trade-off for worse charge transport is a critical issue that needs to be addressed. This comprehensive review first discusses the structure of 3D and 2D metal halide perovskites, then summarizes the significant factors influencing charge transport in detail and provides a brief overview of the testing methods. Subsequently, various strategies to improve the charge transport are presented, including tuning A'-site organic spacer cations, A-site cations, B-site metal cations, and X-site halide ions. Finally, an outlook on the future development of improving the 2D perovskites' charge transport is discussed.
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Affiliation(s)
- Yixin Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Mojtaba Abdi-Jalebi
- Institute for Materials Discovery, University College London, London, WC1E 7JE, UK
| | - Bryon W Larson
- Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Fei Zhang
- School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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7
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Gao Y, Cai Q, He Y, Zhang D, Cao Q, Zhu M, Ma Z, Zhao B, He H, Di D, Ye Z, Dai X. Highly efficient blue light-emitting diodes based on mixed-halide perovskites with reduced chlorine defects. SCIENCE ADVANCES 2024; 10:eado5645. [PMID: 39018409 PMCID: PMC466955 DOI: 10.1126/sciadv.ado5645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Accepted: 06/14/2024] [Indexed: 07/19/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) provide excellent opportunities for low-cost, color-saturated, and large-area displays. However, the performance of blue PeLEDs lags far behind that of their green and red counterparts. Here, we show that the external quantum efficiencies (EQEs) of blue PeLEDs scale linearly with the photoluminescence quantum yields (PL QYs) of CsPb(BrxCl1-x)3 nanocrystals emitting at 460 to 480 nm. The recombination efficiency of carriers is highly sensitive to the chlorine content and the related deep-level defects in nanocrystals, causing notable EQE drops even with minor increases in chlorine defects. Minor adjustments of chlorine content through rubidium compensation on the A-site effectively suppress the formation of nonradiative defects, improving PL QYs while retaining desirable bandgaps for blue-emitting nanocrystals. Our PeLEDs with record-high efficiencies span the blue spectrum, achieving peak EQEs of 12.0% (460 nm), 16.7% (465 nm), 21.3% (470 nm), 24.3% (475 nm), and 26.4% (480 nm). This work exemplifies chlorine-defect control as a key design principle for high-efficiency blue PeLEDs.
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Affiliation(s)
- Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Yifan He
- Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China
| | - Dingshuo Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qingli Cao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Zichao Ma
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Dawei Di
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
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8
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Xu W, Werzer O, Spiliopoulos P, Mihhels K, Jiang Q, Meng Z, Tao H, Resel R, Tammelin T, Pettersson T, Kontturi E. Interfacial Engineering of Soft Matter Substrates by Solid-State Polymer Adsorption. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32874-32885. [PMID: 38863159 PMCID: PMC11212027 DOI: 10.1021/acsami.4c06182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 05/30/2024] [Accepted: 05/31/2024] [Indexed: 06/13/2024]
Abstract
Polymer coating to substrates alters surface chemistry and imparts bulk material functionalities with a minute thickness, even in nanoscale. Specific surface modification of a substate usually requires an active substrate that, e.g., undergoes a chemical reaction with the modifying species. Here, we present a generic method for surface modification, namely, solid-state adsorption, occurring purely by entropic strive. Formed by heating above the melting point or glass transition and subsequent rinsing of the excess polymer, the emerging ultrathin (<10 nm) layers are known in fundamental polymer physics but have never been utilized as building blocks for materials and they have never been explored on soft matter substrates. We show with model surfaces as well as bulk substrates, how solid-state adsorption of common polymers, such as polystyrene and poly(lactic acid), can be applied on soft, cellulose-based substrates. Our study showcases the versatility of solid-state adsorption across various polymer/substrate systems. Specifically, we achieve proof-of-concept hydrophobization on flexible cellulosic substrates, maintaining irreversible and miniscule adsorption yet with nearly 100% coverage without compromising the bulk material properties. The method can be considered generic for all polymers whose Tg and Tm are below those of the to-be-coated adsorbed layer, and whose integrity can withstand the solvent leaching conditions. Its full potential has broad implications for diverse materials systems where surface coatings play an important role, such as packaging, foldable electronics, or membrane technology.
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Affiliation(s)
- Wenyang Xu
- Department
of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, FI-00076 Aalto, Finland
- Department
of Fibre and Polymer Technology, KTH Royal
Institute of Technology, Teknikringen 56, SE-10044 Stockholm, Sweden
- Laboratory
of Natural Materials Technology, Åbo
Akademi University, FI-20500 Turku, Finland
| | - Oliver Werzer
- Joanneum
Research, Institute for Sensors, Photonics
and Manufacturing Technologies, Franz-Pichler-Strasse 30, 8160 Weiz, Austria
| | - Panagiotis Spiliopoulos
- Department
of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, FI-00076 Aalto, Finland
| | - Karl Mihhels
- Department
of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, FI-00076 Aalto, Finland
| | - Qixiang Jiang
- Polymer
and Composite Engineering (PaCE) Group, Institute of Materials Chemistry,
Faculty of Chemistry, University of Vienna, Währinger Straße 42, A-1090 Vienna, Austria
| | - Zhuojun Meng
- Department
of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, FI-00076 Aalto, Finland
| | - Han Tao
- Department
of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, FI-00076 Aalto, Finland
| | - Roland Resel
- Institute
of Solid State Physics, NAWI Graz, Graz
University of Technology, Petersgasse 16, 8010 Graz, Austria
| | - Tekla Tammelin
- Biomass
Processing and Products, VTT Technical Research
Centre of Finland Ltd., FI-02044 Espoo, Finland
| | - Torbjörn Pettersson
- Department
of Fibre and Polymer Technology, KTH Royal
Institute of Technology, Teknikringen 56, SE-10044 Stockholm, Sweden
- Wallenberg
Wood Science Centre, KTH Royal Institute
of Technology, Teknikringen
56, SE-10044 Stockholm, Sweden
| | - Eero Kontturi
- Department
of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, FI-00076 Aalto, Finland
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9
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Qin X, Li M, Zhao Y, Luo J, Zhang Q, Hou E, Lu J, Li J, Tian C, Lin K, Li Z, Wei Z. Surface Treatment with Tailored π-Conjugated Fluorene Derivatives Significantly Enhances the Performance of Perovskite Light-Emitting Diodes. ACS NANO 2024; 18:14696-14707. [PMID: 38780914 DOI: 10.1021/acsnano.4c03419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Surface defect passivation and carrier injection regulation have emerged as effective strategies for enhancing the performance of perovskite light-emitting diodes (Pero-LEDs). It usually requires two functional molecules to realize defect passivation and carrier injection regulation separately. In other words, developing one single molecule possessing these capabilities remains challenging. Herein, we utilized π-conjugated fluorene derivatives as surface treatment materials, 9,9-Spirobi[fluorene] (SBF), 9,9-Spirobifluoren-2-yl-diphenylphosphine oxide (SPPO1), and 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), to investigate the influence of their chemical structure on device optoelectronic performance, especially for defect passivation and carrier injection regulation. Consequently, the passivation capability of double-bonded SPPO13 surpassed single-bonded SPPO1 and nonbonded SBF, which all showed excellent electron transport properties, enhancing electron injection. The maximum external quantum efficiencies (EQE) for Pero-LEDs treated with SBF, SPPO1, and SPPO13 were 8.13, 17.48, and 22.10%, respectively, exceeding that of the derivative-free device (6.55%). Notably, SPPO13-treated devices exhibited exceptional reproducibility, yielding an average EQE of 20.00 ± 1.10% based on 30 devices. This result emphasizes the potential of tailored fluorene derivatives for enhancing the device performance of Pero-LEDs.
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Affiliation(s)
- Xiangqian Qin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
- National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, People's Republic of China
| | - Mingliang Li
- Institute for Ecological Research and Pollution Control of Plateau Lakes, School of Ecology and Environmental Science, Yunnan University, Kunming 650504, People's Republic of China
| | - Yaping Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Jiefeng Luo
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Qin Zhang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Enlong Hou
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Jianxun Lu
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Jiasheng Li
- National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, People's Republic of China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
| | - Kebin Lin
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Zongtao Li
- National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, People's Republic of China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, People's Republic of China
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10
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Huang Q, Yin W, Gao B, Zeng Q, Yao D, Zhang H, Zhao Y, Zheng W, Zhang J, Yang X, Zhang X, Rogach AL. Enhancing crystal integrity and structural rigidity of CsPbBr 3 nanoplatelets to achieve a narrow color-saturated blue emission. LIGHT, SCIENCE & APPLICATIONS 2024; 13:111. [PMID: 38734686 PMCID: PMC11088658 DOI: 10.1038/s41377-024-01441-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 03/27/2024] [Accepted: 03/29/2024] [Indexed: 05/13/2024]
Abstract
Quantum-confined CsPbBr3 perovskites are promising blue emitters for ultra-high-definition displays, but their soft lattice caused by highly ionic nature has a limited stability. Here, we endow CsPbBr3 nanoplatelets (NPLs) with atomic crystal-like structural rigidity through proper surface engineering, by using strongly bound N-dodecylbenzene sulfonic acid (DBSA). A stable, rigid crystal structure, as well as uniform, orderly-arranged surface of these NPLs is achieved by optimizing intermediate reaction stage, by switching from molecular clusters to mono-octahedra, while interaction with DBSA resulted in formation of a CsxO monolayer shell capping the NPL surface. As a result, both structural and optical stability of the CsPbBr3 NPLs is enhanced by strong covalent bonding of DBSA, which inhibits undesired phase transitions and decomposition of the perovskite phase potentially caused by ligand desorption. Moreover, rather small amount of DBSA ligands at the NPL surface results in a short inter-NPL spacing in their closely-packed films, which facilitates efficient charge injection and transport. Blue photoluminescence of the produced CsPbBr3 NPLs is bright (nearly unity emission quantum yield) and peaks at 457 nm with an extremely narrow bandwidth of 3.7 nm at 80 K, while the bandwidth of the electroluminescence (peaked at 460 nm) also reaches a record-narrow value of 15 nm at room temperature. This value corresponds to the CIE coordinates of (0.141, 0.062), which meets Rec. 2020 standards for ultra-high-definition displays.
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Affiliation(s)
- Qianqian Huang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Wenxu Yin
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Bo Gao
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Qingsen Zeng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Dong Yao
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Hao Zhang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, China
| | - Weijia Zheng
- Department of Chemistry, University of Victoria, Victoria, BC, Canada.
| | - Jiaqi Zhang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China.
| | - Andrey L Rogach
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong S.A.R, China.
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11
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Xie C, Zhang X, Chen HS, Yang P. Synthesis-Kinetics of Violet- and Blue-Emitting Perovskite Nanocrystals with High Brightness and Superior Stability toward Flexible Conversion Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308896. [PMID: 38057136 DOI: 10.1002/smll.202308896] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 11/08/2023] [Indexed: 12/08/2023]
Abstract
The low photoluminescence (PL) efficiency and unstable features of small blue-emitting CsPbX3 nanocrystals (NCs) greatly limit their applications in optoelectronics field. Herein, the synergistic and post-treatment kinetics are studied to create highly bright and anomalous stable violet (peak position of ≈408 nm) and blue (peak position of ∼ 466 nm) emitting perovskite NCs. Ligand and ion exchange mechanism are systematic studied by the evolution of absorption, PL, and fluorescence lifetime to evaluate ligand bonding, defect engineering, and non-radiative recombination. Didodecyl dimethyl mmonium chloride (DDAC) and CuX2 post-synergistic treatment created DDAC-CsPbCl3-CuCl2 and DDAC-CsPbCl3-CuBr2 NCs that remained the phase composition, morphology, and size of CsPbCl3 NCs. The PL efficiencies are drastically increased to 42 and 85% for violet- and blue-emitting NCs, respectively. The stability test indicated that the NCs enable against various harsh conditions (e.g., ultraviolet light irradiation and heat-treatment). The NCs retained their initial PL efficiency after 2 months under ambient conditions and UV light irradiation. These NCs also exhibited high stability after heat-treatment at 120 °C. The emitting NCs embedded in flexible films still revealed bright PL and high stability, suggesting current results provide a new avenue for the application in the field of optoelectronics.
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Affiliation(s)
- Cong Xie
- School of Material Science & Engineering, University of Jinan, Jinan, 250022, P. R. China
| | - Xiao Zhang
- Faculty of Chemical Engineering and Technology, Cracow University of Technology, Warszawska 24 St., Krakow, 31-155, Poland
| | - Hsueh Shih Chen
- Department of Materials Science & Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan
| | - Ping Yang
- School of Material Science & Engineering, University of Jinan, Jinan, 250022, P. R. China
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12
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Wang YK, Wan H, Teale S, Grater L, Zhao F, Zhang Z, Duan HW, Imran M, Wang SD, Hoogland S, Liao LS. Long-range order enabled stability in quantum dot light-emitting diodes. Nature 2024; 629:586-591. [PMID: 38720080 DOI: 10.1038/s41586-024-07363-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 03/27/2024] [Indexed: 05/18/2024]
Abstract
Light-emitting diodes (LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiencies (EQEs) of more than 25% with narrowband emission1,2, but these LEDs have limited operating lifetimes. We posit that poor long-range ordering in perovskite QD films-variations in dot size, surface ligand density and dot-to-dot stacking-inhibits carrier injection, resulting in inferior operating stability because of the large bias required to produce emission in these LEDs. Here we report a chemical treatment to improve the long-range order of perovskite QD films: the diffraction intensity from the repeating QD units increases three-fold compared with that of controls. We achieve this using a synergistic dual-ligand approach: an iodide-rich agent (aniline hydroiodide) for anion exchange and a chemically reactive agent (bromotrimethylsilane) that produces a strong acid that in situ dissolves smaller QDs to regulate size and more effectively removes less conductive ligands to enable compact, uniform and defect-free films. These films exhibit high conductivity (4 × 10-4 S m-1), which is 2.5-fold higher than that of the control, and represents the highest conductivity recorded so far among perovskite QDs. The high conductivity ensures efficient charge transportation, enabling red perovskite QD-LEDs that generate a luminance of 1,000 cd m-2 at a record-low voltage of 2.8 V. The EQE at this luminance is more than 20%. Furthermore, the stability of the operating device is 100 times better than previous red perovskite LEDs at EQEs of more than 20%.
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Affiliation(s)
- Ya-Kun Wang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, People's Republic of China
| | - Haoyue Wan
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
| | - Sam Teale
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
- Clarendon Laboratory, University of Oxford, Oxford, United Kingdom
| | - Luke Grater
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
| | - Feng Zhao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, People's Republic of China
| | - Zhongda Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, People's Republic of China
| | - Hong-Wei Duan
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, People's Republic of China
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
| | - Sui-Dong Wang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, People's Republic of China
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada
| | - Liang-Sheng Liao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, People's Republic of China.
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13
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Zhou X, Yang M, Shen C, Lian L, Hou L, Zhang J. Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I) 3 Quantum Dots for High-Performance Pure-Red PeLEDs. NANO LETTERS 2024; 24:3719-3726. [PMID: 38484387 DOI: 10.1021/acs.nanolett.4c00220] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Mixed-halide CsPb(Br/I)3 perovskite quantum dots (QDs) are regarded as one of the most promising candidates for pure-red perovskite light-emitting diodes (PeLEDs) due to their precise spectral tuning property. However, the lead-rich surface of these QDs usually results in halide ion migration and nonradiative recombination loss, which remains a great challenge for high-performance PeLEDs. To solve the above issues, we employ a chelating agent of 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid hydrate (DOTA) to polish the lead-rich surface of the QDs and meanwhile introduce a new ligand of 2,3-dimercaptosuccinic acid (DMSA) to passivate surface defects of the QDs. This synchronous post-treatment strategy results in high-quality CsPb(Br/I)3 QDs with suppressed halide ion migration and an improved photoluminescence quantum yield, which enables us to fabricate spectrally stable pure-red PeLEDs with a peak external quantum efficiency of 23.2%, representing one of the best performance pure-red PeLEDs based on mixed-halide CsPb(Br/I)3 QDs reported to date.
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Affiliation(s)
- Xin Zhou
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd., Foshan 528000, China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Chao Shen
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
| | - Linyuan Lian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lintao Hou
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou 510632, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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14
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Li YH, Xia Y, Zhang Z, Wang B, Jin RJ, Chen CH, Chen J, Wang KL, Xing G, Wang ZK, Liao LS. In Situ Hydrolysis of Phosphate Enabling Sky-Blue Perovskite Light-Emitting Diode with EQE Approaching 16.32. ACS NANO 2024; 18:6513-6522. [PMID: 38345358 DOI: 10.1021/acsnano.3c12131] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
The performance of blue perovskite light-emitting diodes (PeLEDs) lags behind the green and red counterparts owing to high trap density and undesirable red shift of the electroluminescence spectrum under operation conditions. Organic molecular additives were employed as passivators in previous reports. However, most commonly have limited functions, making it challenging to effectively address both efficiency and stability issues simultaneously. Herein, we reported an innovatively dynamic in situ hydrolysis strategy to modulate quasi-2D sky-blue perovskites by the multifunctional passivator phenyl dichlorophosphate that not only passivated the defects but also underwent in situ hydrolysis reaction to stabilize the emission. Moreover, hydrolysis products were beneficial for low-dimensional phase manipulation. Eventually, we obtained high-performance sky-blue PeLEDs with a maximum external quantum efficiency (EQE) of 16.32% and an exceptional luminance of 5740 cd m-2. More importantly, the emission peak of devices located at 485 nm remained stable under different biases. Our work signified the significant advancement toward realizing future applications of PeLEDs.
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Affiliation(s)
- Yu-Han Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Yu Xia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Zhipeng Zhang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa 999078, Macao SAR, China
| | - Bin Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Run-Jun Jin
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Chun-Hao Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Jing Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Kai-Li Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa 999078, Macao SAR, China
| | - Zhao-Kui Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
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15
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Cheng M, Jiang J, Yan C, Lin Y, Mortazavi M, Kaul AB, Jiang Q. Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:391. [PMID: 38470722 PMCID: PMC10933891 DOI: 10.3390/nano14050391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 02/14/2024] [Accepted: 02/16/2024] [Indexed: 03/14/2024]
Abstract
Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.
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Affiliation(s)
- Maoding Cheng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Jingtian Jiang
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Chao Yan
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, USA
| | - Mansour Mortazavi
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, TX 76207, USA
| | - Qinglong Jiang
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
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16
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Tang X, Quan W, Yang F. Green-route manufacturing towards future industrialization of metal halide perovskite nanocrystals. Chem Commun (Camb) 2024; 60:1389-1403. [PMID: 38230642 DOI: 10.1039/d3cc05282f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Perovskite nanocrystals (PeNCs) with excellent optical properties have attracted tremendous research interests and have been considered as promising candidates for new-generation optoelectronic devices. Over the past few years, numerous efforts have been made to overcome the challenges in terms of sustainable manufacturing of PeNCs and related devices and systems, including the solvents used in precursor preparation, antisolvents and perovskite materials for the fabrication of devices and systems, and remarkable progress has been made. However, the usage of toxic, organic solvents in the synthesis of PeNCs poses a threat to the ecosystem and human health, which has hindered the progress in the commercialization and industrialization of PeNCs. This has promoted the development of green solvents for the sustainable manufacturing of PeNCs. In this Feature Article, a state-of-the-art green method for the synthesis of PeNCs is presented, in which the solvents of low toxicities are underlined in contrast to the reported Reviews which focus on toxic solvents for the preparation of precursor solutions. We then focus on green, aqueous methods for the preparation of PeNCs, including conventional perovskite and double PeNCs, by summarizing our previous research efforts and studies. In particular, pure water as the greenest solvent is introduced for the preparation of PeNCs, and the parameters affecting the size and optical characteristics of PeNCs, such as sonication time and ligands for post-treatment, are discussed. The strategies of using a passivation layer to improve the aqueous stability of PeNCs are reviewed, which are grouped into organic polymers and inorganic semiconductors. We highlight the challenges and possible solutions in the green manufacturing and applications of PeNCs. The green routes discussed in this article for the synthesis of PeNCs are expected to be a major step forward for the commercialization and industrialization of the fabrication of PeNCs. It is anticipated that green manufacturing will continue to be the mainstream in the synthesis and fabrication of PeNCs.
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Affiliation(s)
- Xiaobing Tang
- School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Wenzhuo Quan
- School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, P. R. China
| | - Fuqian Yang
- Materials Program, Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA.
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17
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Zhao F, Duan HW, Li SN, Pan JL, Shen WS, Li SM, Zhang Q, Wang YK, Liao LS. Iodotrimethylsilane as a Reactive Ligand for Surface Etching and Passivation of Perovskite Nanocrystals toward Efficient Pure-red to Deep-red LEDs. Angew Chem Int Ed Engl 2023; 62:e202311089. [PMID: 37770413 DOI: 10.1002/anie.202311089] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/27/2023] [Accepted: 09/28/2023] [Indexed: 09/30/2023]
Abstract
Resurfacing perovskite nanocrystals (NCs) with tight-binding and conductive ligands to resolve the dynamic ligands-surface interaction is the fundamental issue for their applications in perovskite light-emitting diodes (PeLEDs). Although various types of surface ligands have been proposed, these ligands either exhibit weak Lewis acid/base interactions or need high polar solvents for dissolution and passivation, resulting in a compromise in the efficiency and stability of PeLEDs. Herein, we report a chemically reactive agent (Iodotrimethylsilane, TMIS) to address the trade-off among conductivity, solubility and passivation using all-inorganic CsPbI3 NCs. The liquid TMIS ensures good solubility in non-polar solvents and reacts with oleate ligands and produces in situ HI for surface etching and passivation, enabling strong-binding ligands on the NCs surface. We report, as a result, red PeLEDs with an external quantum efficiency (EQE) of ≈23 %, which is 11.2-fold higher than the control, and is among the highest CsPbI3 PeLEDs. We further demonstrate the universality of this ligand strategy in the pure bromide system (CsPbBr3 ), and report EQE of ≈20 % at 640, 652, and 664 nm. This represents the first demonstration of a chemically reactive ligand strategy that applies to different systems and works effectively in red PeLEDs spanning emission from pure-red to deep-red.
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Affiliation(s)
- Feng Zhao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Hong-Wei Duan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Sheng-Nan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Jia-Lin Pan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Wan-Shan Shen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Sheng-Ming Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Qiao Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Ya-Kun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 215123, Suzhou, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, 999078, Macau SAR, China
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