Boron Nitride Nanomesh

Hydroxide-Derived Nanostructures: Scalable Synthesis, Characterization, Properties, and Potential Applications

Metal oxide nanostructures have received an increasing attention owing to their unique chemical and physical properties along with their widespread applications in various fields. This article provides an overview of the recent discovery - christened Hydroxides-Derived Nanostructures, or HDNs - in which hydroxide aqueous solutions (mostly tetramethylammonium hydroxide, TMAH) are reacted at temperatures < 100 °C and under atmospheric pressure with various metal-containing precursors to scalably prepare novel metal oxide nanostructures. In one case, a dozen commercial and earth abundant Ti-containing powders such as binary carbides, nitrides, borides, among others, are converted into new, 1D TiO2-based lepidocrocite (1DL) nanofilaments (NFs). Application-wise, the 1DLs show outstanding performance in a number of energy, environmental, and biomedical fields such as photo- and electrocatalysis, water splitting, lithium-sulfur and lithium-ion batteries, water purification, dye degradation, cancer therapy, and polymer composites. In addition to 1DL, the HDNs family encompasses other metal oxides nanostructures including magnetic Fe3O4 nanoparticles and MnO2 birnessite-based crystalline 2D flakes. The latter showed promise in electrochemical energy conversion and storage applications. The developed recipe provides a new vista in the molecular self-assembly synthesis of nanomaterials that can advance the field with a library of novel nanostructures with substantial implications in a multitude of fields.

Selective Formation of Homochiral Dimers by Intermolecular Charge Transfer on a hBN Nanomesh

In this study, a comprehensive characterization was conducted on a chiral starburst molecule (C57H48N4, SBM) using scanning tunneling microscopy. When adsorbed onto the hBN/Rh(111) nanomesh, these molecules demonstrate homochiral recognition, leading to a selective formation of homochiral dimers. Further tip manipulation experiments reveal that the chiral dimers are stable and primarily controlled by strong intermolecular interactions. Density functional theory (DFT) calculations supported that the chiral recognition of SBM molecules is governed by the intermolecular charge transfer mechanism, different from the common steric hindrance effect. This study emphasizes the importance of intermolecular charge transfer interactions, offering valuable insights into the chiral recognition of a simple bimolecular system. These findings hold significance for the future advancement in chirality-based electronic sensors and pharmaceuticals, where the chirality of molecules can impact their properties.

Systematic surface bowing in 2D III-nitride monolayers

In this article we report novel composite materials of bucky ball (C60 fullerene) and III-nitrides (BN, AlN, GaN, InN). The experimental feasibility of the novel composite materials is confirmed through negative binding energies and molecular dynamics simulations performed at 500 K. The structural properties of the novel composites are explored through density functional theory. An unusual phenomenon of surface bowing is observed in the 2D structure of the III-nitride monolayers due to the C60 sticking. This surface bowing systematically increases as one proceeds from BN → AlN → GaN → InN. The electron density difference and Hirshfeld charge density analysis show smaller charge transfer during the complexation, which is probably due to weak van der Waal's forces. The presence of van der Waal's forces is also confirmed by the Atom in Molecule analysis, Reduced Density Gradient Technique and Non-covalent Interaction analysis. This work provides a foundation for further theoretical and experimental studies of the novel phenomenon of systematic bowing in the 2D structure of III-nitride monolayers.

First-principle study on the photoelectric properties of monolayer h-BN under different strain types

CONTEXT

Two-dimensional materials are a new and promising research field in materials science. This is mainly attributed to their unique photoelectric and chemical properties. In addition to possessing unique optoelectronic and chemical properties, two-dimensional materials also have important application prospects in the field of field-effect devices. Based on density functional theory, the effects of uniaxial strain and equibiaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN were studied using first principles. The results indicate that compressive strain has a significant impact on the stability of monolayer h-BN. The band gap width of monolayer h-BN decreases with increasing strain, and the optical properties of monolayer h-BN exhibit a relative trend under tensile and compressive strains. The influence of biaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN is greater than that of uniaxial strain.

METHODS

All the calculations were done by the VASP software based on density functional theory. The interaction between atomic nuclei and electrons is described by the projected added wave pseudopotential (PAW), using the generalized gradient approximation (GGA) to exchange the Perdew-Burke-Ernzerhof (PBE) of the functional. To avoid interlayer interactions, a 15-Å vacuum layer was set up. The Brillouin zone selects the Monkhorst-Pack method to generate 9 × 9 × 1 of k-point grid, the cut off energy is set to 500 eV, the energy convergence standard of the system is 1 × 10-5 eV, and the interaction force between atoms is 0.01 eV/Å.

Bromination of 2D materials

The adsorption, reaction and thermal stability of bromine on Rh(111)-supported hexagonal boron nitride (h-BN) and graphene were investigated. Synchrotron radiation-based high-resolution x-ray photoelectron spectroscopy (XPS) and temperature-programmed XPS allowed us to follow the adsorption process and the thermal evolutionin situon the molecular scale. Onh-BN/Rh(111), bromine adsorbs exclusively in the pores of the nanomesh while we observe no such selectivity for graphene/Rh(111). Upon heating, bromine undergoes an on-surface reaction onh-BN to form polybromides (170-240 K), which subsequently decompose to bromide (240-640 K). The high thermal stability of Br/h-BN/Rh(111) suggests strong/covalent bonding. Bromine on graphene/Rh(111), on the other hand, reveals no distinct reactivity except for intercalation of small amounts of bromine underneath the 2D layer at high temperatures. In both cases, adsorption is reversible upon heating. Our experiments are supported by a comprehensive theoretical study. DFT calculations were used to describe the nature of theh-BN nanomesh and the graphene moiré in detail and to study the adsorption energetics and substrate interaction of bromine. In addition, the adsorption of bromine onh-BN/Rh(111) was simulated by molecular dynamics using a machine-learning force field.

Advances in boron nitride-based nanomaterials for environmental remediation and water splitting: a review

Boron nitride has gained wide-spread attention globally owing to its outstanding characteristics, such as a large surface area, high thermal resistivity, great mechanical strength, low density, and corrosion resistance. This review compiles state-of-the-art synthesis techniques, including mechanical exfoliation, chemical exfoliation, chemical vapour deposition (CVD), and green synthesis for the fabrication of hexagonal boron nitride and its composites, their structural and chemical properties, and their applications in hydrogen production and environmental remediation. Additionally, the adsorptive and photocatalytic properties of boron nitride-based nanocomposites for the removal of heavy metals, dyes, and pharmaceuticals from contaminated waters are discussed. Lastly, the scope of future research, including the facile synthesis and large-scale applicability of boron nitride-based nanomaterials for wastewater treatment, is presented. This review is expected to deliver preliminary knowledge of the present state and properties of boron nitride-based nanomaterials, encouraging the future study and development of these materials for their applications in various fields.

Hexagonal Boron Nitride as Filler for Silica-Based Elastomer Nanocomposites

Two-dimensional hexagonal boron nitride (hBN) has attracted tremendous attention over the last few years, thanks to its stable structure and its outstanding properties, such as mechanical strength, thermal conductivity, electrical insulation, and lubricant behavior. This work demonstrates that hBN can also improve the rheological and mechanical properties of elastomer composites when used to partially replace silica. In this work, commercially available pristine hBN (hBN-p) was exfoliated and ball-mill treated in air for different durations (2.5, 5, and 10 h milling). Functionalization occurred with the -NH and -OH groups (hBN-OH). The functional groups were detected using Fourier-Transform Infrared pectroscopy (FT-IR) and were estimated to be up to about 7% through thermogravimetric analysis. The presence of an increased amount of oxygen in hBN-OH was confirmed using Scanning Electron Microscopy coupled with Energy-Dispersive X-ray Spectroscopy. (SEM-EDS). The number of stacked layers, estimated using WAXD analysis, decreased to 8-9 in hBN-OH (10 h milling) from about 130 in hBN-p. High-resolution transmission electron microscopy (HR-TEM) and SEM-EDS revealed the increase in disorder in hBN-OH. hBN-p and hBN-OH were used to partially replace silica by 15% and 30%, respectively, by volume, in elastomer composites based on poly(styrene-co-butadiene) from solution anionic polymerization (S-SBR) and poly(1,4-cis-isoprene) from Hevea Brasiliensis (natural rubber, NR) as the elastomers (volume (mm3) of composites released by the instrument). The use of both hBNs in substitution of 30% of silica led to a lower Payne effect, a higher dynamic rigidity, and an increase in E' of up to about 15% at 70 °C, with similar/lower hysteresis. Indeed, the composites with hBN-OH revealed a better balance of tan delta (higher at low temperatures and lower at high temperatures) and better ultimate properties. The functional groups reasonably promote the interaction of hBN with silica and with the silica's coupling agent, sulfur-based silane, and thus promoted the interaction with the elastomer chains. The volume of the composite, measured using a high-pressure capillary viscometer, increased by about 500% and 400% after one week of storage in the presence of hBN-p and hBN-OH. Hence, both hBNs improved the processability and the shelf life of the composites. Composites obtained using hBN-OH had even filler dispersion without the detachments of the filler from the elastomer matrix, as shown through TEM micrographs. These results pave the way for substantial improvements in the important properties of silica-based composites for tire compounds, used to reduce rolling resistance and thus the improve environmental impacts.

Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures

Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.

Spectroscopic Characterization of Thiacarbocyanine Dye Molecules Adsorbed on Hexagonal Boron Nitride: a Time-Resolved Study

Physisorption on hexagonal boron nitride (hBN) gained interest over the years thanks to its properties (chemically and thermally stable, insulating properties, etc.) and similarities to the well-known graphene. A recent study showed flat-on adsorption of several cationic thiacarbocyanine dyes on hBN with a tendency to form weakly coupled H- or I-type aggregates, while a zwitterionic thiacarbocyanine dye rather led to a tilted adsorption. With this in-depth time-resolved study using the TC-SPC technique, we confirm the results proven by adsorption isotherms, atomic force microscopy, and stationary state spectroscopy combined with molecular mechanics simulations and estimation of the corresponding exciton interaction. The absence of a systematic trend for the dependence of the decay times, normalized amplitudes of the decay components, and contribution of different components to the stationary emission spectra upon the emission wavelength observed for all studied dyes and coverages suggests the occurrence of a single emitting species. At low coverage levels, the non-mono-exponential character of the decays was attributed to adsorption on different sites characterized by different intramolecular rotational freedom or energy transfer to nonfluorescent traps or a combination of both. The difference between the decay rates of the four dyes reflects a different density of the nonfluorescent traps. Although the decay time of the unquenched dyes was in the order of magnitude of that of dye monomers in a rigid environment, it is also compatible with weakly coupled aggregates such as proposed earlier based on the stationary spectra. Hence, the adsorption leads to a rigid environment of the dyes, blocking internal conversion. Increasing the concentration of the dye solution from which the adsorption on hBN occurs increases not only the coverage of the hBN surface but also the extent of energy transfer to nonfluorescent traps. For TDC (5,5-dichloro-3-3'-diethyl-9-ethyl-thiacarbocyanine) and TD2 (3-3'-diethyl-9-ethyl-thiacarbocyanine), besides direct energy transfer to traps, exciton hopping between dye dimers followed by energy transfer to these traps occurs, which resulted in a decreasing decay time of the longest decaying component. For all dyes, it was also possible to analyze the fluorescence decays as a stretched exponential as would be expected for energy transfer to randomly distributed traps in a two-dimensional (2D) geometry. This analysis yielded a fluorescence decay time of the unquenched dyes similar to the longest decay time obtained by analysis of the fluorescence decays as a sum of three of four exponentials.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

A novel two-dimensional superconducting Ti layer: density functional theory and electron-beam irradiation

Since the discovery of graphene in an atomic thin layer format, many investigations have been conducted to search for two-dimensional (2D) layered materials, in which 3d-transition metals offer much new physics and great freedom of tunability. In this work, through electron-beam irradiation, we enable the manufacture of a new 2D Ti nanosheet from a suspension of Ti_0.91O₂ nanosheets. In state-of-the-art density functional theory (DFT), both empirical and linear response theory predicted that Hubbard U_eff values would be imposed, resulting in unstable phonon dispersion curves. In the end, the newly found Ti monolayer is confirmed to be a non-magnetic superconductor, with a medium level of electron-phonon coupling. The newly established Ti layer is quite robust under strain, and the evolution of local Dirac points in electronic bands is also analyzed in terms of linearity and energetic shift near the Fermi energy. As suggested by the Fermi surface, this metal monolayer experiences an electronic topological transition under strain. Our findings will encourage many more explorations of pure d metal-based isotopic monolayers with diverse structures and open a new playground for 2D superconductors and ultra-thin sensoring components.

Machine learning and DFT investigation of CO, CO2 and CH4 adsorption on pristine and defective two-dimensional magnesene

Adsorption study of environmentally toxic small gas molecules on two-dimensional (2D) materials plays a significant role in analyzing the performance of sensors. In this work, density functional theory (DFT) and machine learning (ML) techniques have been employed to systematically study the adsorption properties of CO, CO₂, and CH₄ gas molecules on the pristine and defective planar magnesium monolayer, known as magnesene (2D-Mg). The DFT analysis showed that mechanically robust 2D-Mg retains its metallicity in the presence of both mono and di-vacancy defects. Our observations have shown that 2D-Mg, whether defective or pristine, exhibits distinct adsorption behaviors towards CO, CO₂, and CH₄ gas molecules, including varying chemisorption and physisorption, charge transfer, and distance from the gas molecules. When analyzing the recovery time of gas molecules at room temperature, it is clear that adsorption energy has a direct correlation with the adsorption-desorption cycles, and CH₄ possesses an ultra-low recovery time (15.27 ps) compared to CO₂ (1.04 ns) and CO (0.90 μs) molecules. The analysis showed that defects do not have a significant impact on the work function of 2D-Mg. However, the work function decreased upon adsorption of CH₄, resulting in improved sensitivity due to changes in the electronic properties. Additionally, we explored supervised ML regression models to evaluate their ability to act as a surrogate for the DFT-based adsorption energy calculation. Using both system statistics and smooth overlap of atomic position (SOAP)-based featurization, we observed that adsorption energies can be predicted with a mean absolute error of 0.10 eV.

Angstrom-Confined Electrochemical Synthesis of Sub-Unit-Cell Non-Van Der Waals 2D Metal Oxides

Bottom-up electrochemical synthesis of atomically thin materials is desirable yet challenging, especially for non-vanderWaals (non-vdW) materials. Thicknesses below a few nanometers have not been reported yet, posing the question how thin can non-vdW materials be electrochemically synthesized. This is important as materials with (sub-)unit-cell thickness often show remarkably different properties compared to their bulk form or thin films of several nanometers thickness. Here, a straightforward electrochemical method utilizing the angstrom-confinement of laminar reduced graphene oxide (rGO) nanochannels is introduced to obtain a centimeter-scale network of atomically thin (<4.3 Å) 2D-transition metal oxides (2D-TMO). The angstrom-confinement provides a thickness limitation, forcing sub-unit-cell growth of 2D-TMO with oxygen and metal vacancies. It is showcased that Cr₂ O₃ , a material without significant catalytic activity for the oxygen evolution reaction (OER) in bulk form, can be activated as a high-performing catalyst if synthesized in the 2D sub-unit-cell form. This method displays the high activity of sub-unit-cell form while retaining the stability of bulk form, promising to yield unexplored fundamental science and applications. It is shown that while retaining the advantages of bottom-up electrochemical synthesis, like simplicity, high yield, and mild conditions, the thickness of TMO can be limited to sub-unit-cell dimensions.

Creating a Nanoscale Lateral Junction in a Semiconductor Monolayer with a Large Built-in Potential

The ability to engineer atomically thin nanoscale lateral junctions is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of a monolayer TMD to create a lateral electronic junction. Here we demonstrate the synthesis of a nanoscale lateral junction in monolayer MoSe₂ by intercalating Se at the interface of an hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe₂ monolayer to create a lateral junction with a large built-in potential of 0.83 ± 0.06 eV. We spatially resolve the MoSe₂ band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe₂ band gap by ∼0.26 ± 0.1 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties.

A van der Waals Heterostructure with an Electronically Textured Moiré Pattern: PtSe2/PtTe2

The interlayer interaction in Pt-dichalcogenides strongly affects their electronic structures. The modulations of the interlayer atom-coordination in vertical heterostructures based on these materials are expected to laterally modify these interlayer interactions and thus provide an opportunity to texture the electronic structure. To determine the effects of local variation of the interlayer atom coordination on the electronic structure of PtSe₂, van der Waals heterostructures of PtSe₂ and PtTe₂ have been synthesized by molecular beam epitaxy. The heterostructure forms a coincidence lattice with 13 unit cells of PtSe₂ matching 12 unit cells of PtTe₂, forming a moiré superstructure. The interaction with PtTe₂ reduces the band gap of PtSe₂ monolayers from 1.8 eV to 0.5 eV. While the band gap is uniform across the moiré unit cell, scanning tunneling spectroscopy and dI/dV mapping identify gap states that are localized within certain regions of the moiré unit cell. Deep states associated with chalcogen p_z-orbitals at binding energies of ∼ -2 eV also exhibit lateral variation within the moiré unit cell, indicative of varying interlayer chalcogen interactions. Density functional theory calculations indicate that local variations in atom coordination in the moiré unit cell cause variations in the charge transfer from PtTe₂ to PtSe₂, thus affecting the value of the interface dipole. Experimentally this is confirmed by measuring the local work function by field emission resonance spectroscopy, which reveals a large work function modulation of ∼0.5 eV within the moiré structure. These results show that the local coordination variation of the chalcogen atoms in the PtSe₂/PtTe₂ van der Waals heterostructure induces a nanoscale electronic structure texture in PtSe₂.

Directing and Understanding the Translation of a Single Molecule Dipole

Understanding the directed motion of a single molecule on surfaces is not only important in the well-established field of heterogeneous catalysis but also for the design of artificial nanoarchitectures and molecular machines. Here, we report how the tip of a scanning tunneling microscope (STM) can be used to control the translation direction of a single polar molecule. Through the interaction of the molecular dipole with the electric field of the STM junction, it was found that both translations and rotations of the molecule occur. By considering the location of the tip with respect to the axis of the dipole moment, we can deduce the order in which rotation and translation take place. While the molecule-tip interaction dominates, computational results suggest that the translation is influenced by the surface direction along which the motion takes place.

A theoretical study on the line defects in β12-borophene: enhanced direct-current and alternating-current conductances

Using density functional theory and the non-equilibrium Green's function method, we theoretically investigated the structures, stabilities, electronic properties, and the direct-current (DC) and alternating-current (AC) transport properties of the line defects in two-dimensional material β₁₂-borophene. Our results suggest that there exist six line defects that can enhance the stability of β₁₂-borophene and the line defects have profound influences on the electronic structure of β₁₂-borophene. Along the zigzag direction, the line defects can change the atomic orbital components of the Dirac cones in perfect β₁₂-borophene, but the line defects along the armchair direction have complicated influences on the Dirac cones. In the case of DC transport, some of the line defects lead to the constant DC phenomenon and the negative differential resistance effect, and enhance the DC conductances since the line defects exhibit typical one-dimensional characteristics. In the case of AC transport, some of the line defects enhance the AC conductances in the medium-frequency and high-frequency ranges through the photon-assisted tunneling effect. The microscopic mechanisms of the enhanced DC and AC conductances are different. In addition, for a low-frequency range, the equivalent circuits of β₁₂-borophene and the line defects were also suggested, which will be beneficial for designing borophene-based functional nanodevices.

A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

Effect of Ambient Plasma Treatments on Thermal Conductivity and Fracture Toughness of Boron Nitride Nanosheets/Epoxy Nanocomposites

With the rapid growth in the miniaturization and integration of modern electronics, the dissipation of heat that would otherwise degrade the device efficiency and lifetime is a continuing challenge. In this respect, boron nitride nanosheets (BNNS) are of significant attraction as fillers for high thermal conductivity nanocomposites due to their high thermal stability, electrical insulation, and relatively high coefficient of thermal conductivity. Herein, the ambient plasma treatment of BNNS (PBNNS) for various treatment times is described for use as a reinforcement in epoxy nanocomposites. The PBNNS-loaded epoxy nanocomposites are successfully manufactured in order to investigate the thermal conductivity and fracture toughness. The results indicate that the PBNNS/epoxy nanocomposites subjected to 7 min plasma treatment exhibit the highest thermal conductivity and fracture toughness, with enhancements of 44 and 110%, respectively, compared to the neat nanocomposites. With these enhancements, the increases in surface free energy and wettability of the PBNNS/epoxy nanocomposites are shown to be attributable to the enhanced interfacial adhesion between the filler and matrix. It is demonstrated that the ambient plasma treatments enable the development of highly dispersed conductive networks in the PBNNS epoxy system.

The Winner Takes It All: Carbon Supersedes Hexagonal Boron Nitride with Graphene on Transition Metals at High Temperatures

The production of high-quality hexagonal boron nitride (h-BN) is essential for the ultimate performance of 2D materials-based devices, since it is the key 2D encapsulation material. Here, a decisive guideline is reported for fabricating high-quality h-BN on transition metals. It is crucial to exclude carbon from the h-BN related process, otherwise carbon prevails over boron and nitrogen due to its larger binding energy, thereupon forming graphene on metals after high-temperature annealing. The surface reaction-assisted conversion from h-BN to graphene with high-temperature treatments is demonstrated. The pyrolysis temperature T_p is an important quality indicator for h-BN/metals. When the temperature is lower than T_p , the quality of the h-BN layer is improved upon annealing. While the annealing temperature is above T_p , in case of carbon-free conditions, the h-BN disintegrates and nitrogen desorbs from the surface more easily than boron, eventually leading to clean metal surfaces. However, once the h-BN layer is exposed to carbon, graphene forms on Pt(111) in the high-temperature regime. This not only provides an indispensable principle (avoid carbon) for fabricating high-quality h-BN materials on transition metals, but also offers a straightforward method for the surface reaction-assisted conversion from h-BN to graphene on Pt(111).

Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials

Due to their layered nature, two-dimensional nanomaterials can stack into artificial material systems, with van der Waals interaction between the adjacent constituent layers. In such heterostructures, the physical properties are largely affected by the interlayer coupling and can thus be effectively tuned by a number of means. In this Perspective, we highlight four such experimental approaches: stacking order, electric field, intercalation, and pressure, and we discuss challenges and opportunities in future studies for van der Waals heterostructures.

Metamagnetic transition and a loss of magnetic hysteresis caused by electron trapping in monolayers of single-molecule magnet Tb2@C79N

Realization of stable spin states in surface-supported magnetic molecules is crucial for their applications in molecular spintronics, memory storage or quantum information processing. In this work, we studied the surface magnetism of dimetallo-azafullerene Tb₂@C₇₉N, showing a broad magnetic hysteresis in a bulk form. Surprisingly, monolayers of Tb₂@C₇₉N exhibited a completely different behavior, with the prevalence of a ground state with antiferromagnetic coupling at low magnetic field and a metamagnetic transition in the magnetic field of 2.5-4 T. Monolayers of Tb₂@C₇₉N were deposited onto Cu(111) and Au(111) by evaporation in ultra-high vacuum conditions, and their topography and electronic structure were characterized by scanning tunneling microscopy and spectroscopy (STM/STS). X-ray photoelectron spectroscopy (XPS), in combination with DFT studies, revealed that the nitrogen atom of the azafullerene cage tends to avoid metallic surfaces. Magnetic properties of the (sub)monolayers were then studied by X-ray magnetic circular dichroism (XMCD) at the Tb-M_4,5 absorption edge. While in bulk powder samples Tb₂@C₇₉N behaves as a single-molecule magnet with ferromagnetically coupled magnetic moments and blocking of magnetization at 28 K, its monolayers exhibited a different ground state with antiferromagnetic coupling of Tb magnetic moments. To understand if this unexpected behavior is caused by a strong hybridization of fullerenes with metallic substrates, XMCD measurements were also performed for Tb₂@C₇₉N adsorbed on h-BN|Rh(111) and MgO|Ag(100). The co-existence of two forms of Tb₂@C₇₉N was found on these substrates as well, but magnetization curves showed narrow magnetic hysteresis detectable up to 25 K. The non-magnetic state of Tb₂@C₇₉N in monolayers is assigned to anionic Tb₂@C₇₉N^- species with doubly-occupied Tb-Tb bonding orbital and antiferromagnetic coupling of the Tb moments. A charge transfer from the substrate or trapping of secondary electrons are discussed as a plausible origin of these species.

Hexagonal Boron Nitride on III–V Compounds: A Review of the Synthesis and Applications

Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III–V compounds are systematically summarized, and the prospects are discussed.

Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride

Monolayer hexagonal boron nitride (hBN) has attracted interest as an ultrathin tunnel barrier or environmental protection layer. Recently, wafer-scale hBN growth on Cu(111) was developed for semiconductor chip applications. For basic research and technology, understanding how hBN perturbs underlying electronically active layers is critical. Encouragingly, hBN/Cu(111) has been shown to preserve the Cu(111) surface state (SS), but it was unknown how tunneling into this SS through hBN varies spatially. Here, we demonstrate that the Cu(111) SS under wafer-scale hBN is homogeneous in energy and spectral weight over nanometer length scales and across atomic terraces. In contrast, a new spectral feature─not seen on bare Cu(111)─varies with atomic registry and shares the spatial periodicity of the hBN/Cu(111) moiré. This work demonstrates that, for some 2D electron systems, an hBN overlayer can act as a protective yet remarkably transparent window on fragile low-energy electronic structure below.

Modulating the periods and electronic properties of striped moiré superstructures for monolayer WSe2 on Au(100) by varied interface coupling

Moiré superlattices formed by the stacking of two-dimensional (2D) transition metal dichalcogenide lattices on substrate lattices have been reported to imply a crucial effect on the electronic properties of 2D materials (e.g., band gap, doping level) and their physical properties. Herein, we report the direct observation of various striped moiré superstructures for monolayer WSe₂ on the Au(100) facet, due to the lattice symmetry difference and relative rotation. The periodicities or the inter-stripe distances for striped superstructures fall in a range of 0-15 nm or 0-3 nm after relatively low or high temperature annealing processes, respectively. The diverse striped moiré superstructures then served as perfect platforms for examining the electronic band gap tunability for monolayer WSe₂/Au(100) by using scanning tunneling microscopy/spectroscopy (STM/STS), which increases from ∼1.59 eV to ∼1.90 eV with increasing moiré periods from ∼1.62 to ∼11.58 nm. The coupling strength of monolayer WSe₂/Au(100) with various striped patterns is thus proposed to be modulated by the different relative orientations. This work should hereby provide some fundamental references for the domain orientation control, interface coupling strength, and application explorations of two-dimensional layered materials in future electronics and optoelectronics.

Topography inversion in scanning tunneling microscopy of single-atom-thick materials from penetrating substrate states

Scanning tunneling microscopy (STM) is one of the indispensable tools to characterize surface structures, but the distinction between atomic geometry and electronic effects based on the measured tunneling current is not always straightforward. In particular, for single-atomic-thick materials (graphene or boron nitride) on metallic substrates, counterintuitive phenomena such as a larger tunneling current for insulators than for metal and a topography opposite to the atomic geometry are reported. Using first-principles density functional theory calculations combined with analytical modeling, we reveal the critical role of penetrating states of metallic substrates that surpass 2D material states, hindering the measurement of intrinsic 2D materials states and leading to topography inversion. Our finding should be instrumental in the interpretation of STM topographies of atomic-thick materials and in the development of 2D material for (opto)electronic and various quantum applications.

Edge stabilities, properties and growth kinetics of graphene-like two dimensional monolayers composed with Group 15 elements

Graphene-like two dimensional (2D) monolayers composed of β-structured Group 15 (β-G15) elements have attracted great attention due to their intrinsic bandgaps, thermodynamic stabilities and high mobilities. Quite different from graphene, a buckle with amplitude ranging from 1.24 Å to 1.65 Å exists along the z direction in β-G15 films. To learn the growth behaviours and the relevant influence of such buckles, here, we performed a systematic study on the edge stabilities of monolayer films constructed with β-phase P, As, Sb and Bi, respectively. Our theoretical results show that, for free-standing films, the zigzag edge with dangling atoms is the most stable one for bare P, As and Sb and the pristine AC edge is the most stable one for Bi, while the pristine zigzag edge becomes the most stable one for all films if the edge is terminated with hydrogen atoms, both resulting in hexagonal flakes under equilibrium growth conditions. Buckles show no apparent influence on the edge stabilities in free-standing films while play a significant role in cases considering underlying metal substrates. Such an influence can be attributed to the charge transfer difference between the lower/upper β-G15 atoms and underlying substrates, which may eventually determine the growth mechanism and morphologies of 2D β-G15 films. Detailed growth kinetics and properties were also discussed based on the first-principles results. The understanding of these fundamental principles should provide useful information for guiding the synthesis of β-G15 films and other 2D materials.

High-Performance Boron Nitride Based Membranes for Water Purification

In recent years, nanotechnology-based approaches have resulted in the development of new alternative sustainable technologies for water purification. Two-dimensional (2D) nanomaterials are an emerging class of materials for nanofiltration membranes. In this work, we report the production, characterisation and testing of a promising nanofiltration membrane made from water-exfoliated boron nitride (BN) 2D nanosheets. The membranes have been tested for water purification and removal of typical water-soluble dyes such as methyl orange, methylene blue and Evans blue, with the water-exfoliated BN membranes achieving retention values close to 100%. In addition, we compared the performance of membranes made from water-exfoliated BN with those produced from BN using sonication-assisted liquid exfoliation in selected organic solvents such as 2-propanol and N-methyl-2-pyrrolidone. It was found that membranes from the water-exfoliated BN showed superior performance. We believe this research opens up a unique opportunity for the development of new high-performance environmentally friendly membranes for nanofiltration and new sustainable separation technologies.

Lauric acid adsorption on specific boron nitride fullerenes and the chemical influence of homonuclear bonds: a theoretical approach

The efficiency of boron nitride fullerenes as lauric acid transporters, seen from a density functional theory point of view.

Isolated Ni atoms induced edge stabilities and equilibrium shapes of CVD-prepared hexagonal boron nitride on the Ni(111) surface

The edge stability and equilibrium shape of h-BN passivated by isolated Ni atoms are revealed by density functional theory simulations.

Controllable growth of two-dimensional materials on noble metal substrates

Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

Reactivity and Passivation of Fe Nanoclusters on h-BN/Rh(111)

The reactivity of iron nanocluster arrays on h‐BN/Rh(111) was studied using in situ high‐resolution X‐ray photoelectron spectroscopy. The morphology and reactivity of the iron nanoclusters (Fe‐NCs) were investigated by CO adsorption. On‐top and hollow/edge sites were determined to be the available adsorption sites on the as‐prepared Fe‐NCs and CO dissociation was observed at 300 K. C‐ and O‐precovered Fe‐NCs showed no catalytic activity towards CO dissociation because the hollow/edge sites were blocked by the C and O atoms. Therefore, these adsorption sites were identified to be the most active sites of the Fe‐NCs.

Nanoscale layer of a minimized defect area of graphene and hexagonal boron nitride on copper for excellent anti-corrosion activity

In this work, we synthesized a monolayer of graphene and hexagonal boron nitride (hBN) using chemical vapor deposition. The physicochemical and electrochemical properties of the materials were evaluated to determine their morphology. High-purity materials and their atomic-scale coating on copper (Cu) foil were employed to prevent fast degradation rate. The hexagonal two-dimensional (2D) atomic structures of the as-prepared materials were assessed to derive their best anti-corrosion behavior. The material prepared under optimized conditions included edge-defect-free graphene nanosheets (∼0.0034μm²) and hBN (∼0.0038μm²) per unit area of 1μm². The coating of each material on the Cu surface significantly reduced the corrosion rate, which was ∼2.44 × 10^-2/year and 6.57 × 10^-3/year for graphene/Cu and hBN/Cu, respectively. Importantly, the corrosion rate of Cu was approximately 3-fold lower after coating with hBN relative to that of graphene/Cu. This approach suggests that the surface coating of Cu using cost-effective, eco-friendly, and the most abundant materials in nature is of interest for developing marine anti-corrosion micro-electronic devices and achieving surface modification of pure metals in industrial applications.

Borophenes made easy

To date, the scalable synthesis of elemental two-dimensional materials beyond graphene still remains elusive. Here, we introduce a versatile chemical vapor deposition (CVD) method to grow borophenes, as well as borophene heterostructures, by selectively using diborane originating from traceable byproducts of borazine. Specifically, metallic borophene polymorphs were successfully synthesized on Ir(111) and Cu(111) single-crystal substrates and conjointly with insulating hexagonal boron nitride (hBN) to form atomically precise lateral borophene-hBN interfaces or vertical van der Waals heterostructures. Thereby, borophene is protected from immediate oxidation by a single hBN overlayer. The ability to synthesize high-quality borophenes with large single-crystalline domains in the micrometer scale by a straight-forward CVD approach opens up opportunities for the study of their fundamental properties and for device incorporation.

Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.

Fabrication of thermally conductive polymer composites based on hexagonal boron nitride: recent progresses and prospects

Hexagonal boron nitride (h-BN) and its nanomaterials are among the most promising candidates for use in thermal management applications because of their high thermal conductivity, thermal stability, and good electric insulation, and when used as the conductive fillers, they enhance the overall properties of polymer composites. In this review, the basic concepts of h-BN are introduced, followed by the synthesis of BN nanotubes and BN nanosheets. Then, various novel methods to fabricate h-BN polymer composites with improved thermally conductive paths are discussed. They can be classified into two categories: dispersion and compatibility reinforced and structure formation. In addition, the thermal conducting mechanisms of h-BN composites are proposed. Finally, the advantages and limitations of aforementioned strategies are summarized.

Metal dichalcogenide nanomeshes: structural, electronic and magnetic properties

Motivated by the successful preparation of two-dimensional transition metal dichalcogenide (2D-TMD) nanomeshes in the last three years, we use density functional theory (DFT) to study the structural stability, mechanical, magnetic, and electronic properties of porous 2H-MoX₂ (X = S, Se and Te) without and with pore passivation. We consider structures with multiple, systematically created pores. The molecular dynamics simulations and cohesive energy calculations showed the stability of the 2D-TMD nanomeshes, with larger stability for those with smaller pores. The lattice undergoes some deformations to accommodate the pore energetically, and as the pore size increases Young's modulus decreases. In most cases, the missing metal atoms disrupt the spin states' even population, resulting in some nanomeshes becoming magnetic. The electronic gaps of the MoX₂ nanomesh systems are diminished because of the emergence of pore-edge localized mid-gap metal 4d states in the spin-polarized spectrum, making some systems half-metallic. The oxygen passivation of the pore edges of 2D-TMD nanomeshes restores the even population of spin states, and makes those systems metallic. Our results can be used in different applications such as spintronics, ion chelation, and molecular sensing applications.

Selective Oxygen and Hydrogen Functionalization of the h-BN/Rh(111) Nanomesh

We present detailed studies on the covalent adsorption of molecular oxygen and atomic hydrogen on the hexagonal boron nitride (h-BN) nanomesh on Rh(111). The functionalization of this two-dimensional (2D) material was investigated under ultra-high vacuum conditions using synchrotron radiation-based in situ high-resolution X-ray photoelectron spectroscopy, temperature-programmed X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. We are able to provide a deep insight into the adsorption behavior and thermal stability of oxygen and hydrogen on h-BN/Rh(111). Oxygen functionalization was achieved via a supersonic molecular beam while hydrogen functionalization was realized using an atomic hydrogen source. Adsorption of the respective species was observed to occur selectively in the pores of h-BN leading to spatially defined modification of the 2D layer. The adsorption of the observed molecular oxygen species was found to be an activated process that requires high-energy oxygen molecules. Upon heating to 700 K, oxygen functionalization was observed to be almost reversible except for small amounts of boron oxides evolving due to the reaction of oxygen with the 2D material. Hydrogen functionalization of h-BN/Rh(111) was fully reversed upon heating to about 640 K.

Single-Phase Formation of Rh2 O3 Nanoparticles on h-BN Support for Highly Controlled Methane Partial Oxidation to Syngas

Single-phase formation of active metal oxides on supports has been vigorously pursued in many catalytic applications to suppress undesired reactions and to determine direct structure-property relationships. However, this is difficult to achieve in nanoscale range because the effect of non-uniform metal-support interfaces becomes dominant in the overall catalyst growth, leading to the nucleation of various metastable oxides. Herein, we develop a supported single-phase corundum-Rh₂ O₃ (I) nanocatalyst by utilizing controlled interaction between metal oxide and h-BN support. Atomic-resolution electron microscopy and first-principle calculation reveal that single-phase formation occurs via uniform and preferential attachment of Rh₂ O₃ (I) (110) seed planes on well-defined h-BN surface after decomposition of rhodium precursor. By utilizing the Rh/h-BN catalyst in methane partial oxidation, syngas is successfully produced solely following the direct route with keeping a H₂ /CO ratio of 2, which makes it ideal for most downstream chemical processes.

Atomically-Precise Texturing of Hexagonal Boron Nitride Nanostripes

Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano- and opto-electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two-dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one-dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)-oriented terraces and lattice-matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi-stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.

Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives

Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.

The Versatile Electronic, Magnetic and Photo-Electro Catalytic Activity of a New 2D MA2 Z4 Family*

The recent successful growth of MoSi₂ N₄ and WSi₂ N₄ monolayers led to the discovery of a new class of the two-dimensional (2D) MA₂ Z₄ materials with no known 3D layered allotropes, which renders great possibilities to integrate diverse properties by proper design of sandwiched "MZ₂ " building blocks and "A-Z" passivation layers. In this work, the dynamic stability, electronic properties, and surface reactivity of the new MA₂ Z₄ family, in which M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, A refers to Si or Ge, and Z is N, P or As, is theoretically probed. Among the proposed 54 possible combinations, about 42 compositions are dynamically stable, which vary from non-magnetic, anti-ferromagnetic, to ferromagnetic semiconductors, metals and half-metals. In particular, the VB (V, Nb, Ta) MA₂ Z₄ possesses robust intrinsic ferromagnetism that is essential for spintronics applications. In regard to surface activity, most MA₂ Z₄ , particularly N- or P-terminated IVB and VB MA₂ Z₄ , have high catalytic potential for hydrogen evolution, and the ▵G_H of non-magnetic MA₂ Z₄ is highly correlated to the highest occupied p electronic states of the surface Z atoms. The photocatalytic activity is also evaluated. MoSi₂ N₄ and WSi₂ N₄ within 4 % tensile strain are capable of photocatalytic overall water splitting. The findings indicate the new 2D MA₂ Z₄ family has fascinating properties and possesses strong potential for applications but not limited to electronics, spintronics and catalysts, which will stimulate the interests of experimental synthesis.

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

Combined scanning tunnelling and atomic force microscopy using a qPlus sensor enables the measurement of electronic and mechanic properties of two-dimensional materials at the nanoscale. In this work, we study hexagonal boron nitride (h-BN), an atomically thin 2D layer, that is van der Waals-coupled to a Cu(111) surface. The system is of interest as a decoupling layer for functional 2D heterostructures due to the preservation of the h-BN bandgap and as a template for atomic and molecular adsorbates owing to its local electronic trapping potential due to the in-plane electric field. We obtain work function (Φ) variations on the h-BN/Cu(111) superstructure of the order of 100 meV using two independent methods, namely the shift of field emission resonances and the contact potential difference measured by Kelvin probe force microscopy. Using 3D force profiles of the same area we determine the relative stiffness of the Moiré region allowing us to analyse both electronic and mechanical properties of the 2D layer simultaneously. We obtain a sheet stiffness of 9.4 ± 0.9 N·m^-1, which is one order of magnitude higher than the one obtained for h-BN/Rh(111). Using constant force maps we are able to derive height profiles of h-BN/Cu(111) showing that the system has a corrugation of 0.6 ± 0.2 Å, which helps to demystify the discussion around the flatness of the h-BN/Cu(111) substrate.

Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis

The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS₂ have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.