Multioutput Convolutional Neural Network for Improved Parameter Extraction in Time-Resolved Electrostatic Force Microscopy Data

Time-resolved scanning probe microscopy methods, like time-resolved electrostatic force microscopy (trEFM), enable imaging of dynamic processes ranging from ion motion in batteries to electronic dynamics in microstructured thin film semiconductors for solar cells. Reconstructing the underlying physical dynamics from these techniques can be challenging due to the interplay of cantilever physics with the actual transient kinetics of interest in the resulting signal. Previously, quantitative trEFM used empirical calibration of the cantilever or feed-forward neural networks trained on simulated data to extract the physical dynamics of interest. Both these approaches are limited by interpreting the underlying signal as a single exponential function, which serves as an approximation but does not adequately reflect many realistic systems. Here, we present a multibranched, multioutput convolutional neural network (CNN) that uses the trEFM signal in addition to the physical cantilever parameters as input. The trained CNN accurately extracts parameters describing both single-exponential and biexponential underlying functions and more accurately reconstructs real experimental data in the presence of noise. This work demonstrates an application of physics-informed machine learning to complex signal processing tasks, enabling more efficient and accurate analysis of trEFM.

Sacrificial layer concept interface engineering for robust, lossless monolithic integration of perovskite/Si tandem solar cells yielding high fill factor of 0.813

Efficient monolithic perovskite/Si tandem solar cells require a robust recombination junction (RJ) with excellent electrical and optical properties. This study introduces an interface engineering method using an organic sacrificial layer to enable effective monolithic integration. An ultrathin layer of poly(3,4-ethylene-dioxythiophene):polystyrene sulfonate (PEDOT:PSS) is inserted between the transparent conductive oxide recombination layer and the hole transport layer (HTL) of a methylammonium lead iodide (MAPbI3)-based perovskite top cell. This layer restores junction functionality and enables charge transfer between sub-cells via efficient carrier recombination at the RJ, which electrically connects the two cells. Acting as a sacrificial layer, PEDOT:PSS temporarily prevents resistive SiOx formation and improves interface quality. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy confirm suppression of SiOx growth during HTL annealing. Moreover, the Cu-doped NiOx HTL fabrication method proves critical, where process optimization improves electrical contact. Combined with PEDOT:PSS interface engineering, these enhancements promote efficient recombination by tuning interfacial energy levels and increasing band bending at the RJ. As a result, tandem devices comprising an aluminum back-surface field p-type homojunction Si bottom cell and a p-i-n perovskite top cell achieve 21.95% power conversion efficiency and an 81.3% fill factor -among the highest reported for monolithic perovskite/Si tandem solar cells.

Tailored Crystallization Dynamics for Efficient and Stable DMSO-Free Tin Perovskite Solar Cells

Tin perovskite solar cells are emerging as a sustainable lead-free alternative in thin film photovoltaics. DMSO-free processed tin perovskites are gaining interest due to the detrimental effects of DMSO on tin oxidation. However, replacing DMSO with other solvents remains challenging due to the accelerated crystallization dynamics in non-DMSO systems. In this study, the crystallization process in a DMSO-free solvent system is regulated by managing the transition from the sol-gel phase to the solid film. Specifically, piperazine dihydriodide (PDAI) and 4-tert-butylpyridine (tBP) are utilized to coordinately tune the colloidal chemistry through forming large pre-nucleation clusters in perovskite ink, further, facilitating the film formation process. By combining tBP and PDAI, a controllable crystallization rate is achieved as evidenced by in situ photoluminescence (PL) measurement during spin-coating. As a result, tin perovskite films show high crystallinity and improved microstructure. Devices treated with tBP+PDAI exhibit a champion power conversion efficiency of 7.8% and excellent stability without observable degradation for over 3000 h stored in the N2 glovebox. These findings advance understanding and managing crystallization in DMSO-free solvents processed tin perovskite solar cells.

Perovskite Solar Cells and Light Emitting Diodes: Materials Chemistry, Device Physics and Relationship

Solution-processed perovskite solar cells (PSCs) and perovskite light emitting diodes (PeLEDs) represent promising next-generation optoelectronic technologies. This Review summarizes recent advancements in the application of metal halide perovskite materials for PSC and PeLED devices to address the efficiency, stability and scalability issues. Emphasis is placed on material chemistry strategies used to control and engineer the composition, deposition process, interface and micro-nanostructure in solution-processed perovskite films, leading to high-quality crystalline thin films for optimal device performance. Furthermore, we retrospectively compare the device physics of PSCs and PeLEDs, their working principles and their energy loss mechanisms, examining the similarities and differences between the two types of devices. The reciprocity relationship suggests that a great PSC should also be a great PeLED, motivating the search for interconverting photoelectric bifunctional devices with maximum radiative recombination and negligible non-radiative recombination. Specific requirements of PSCs and PeLEDs in terms of bandgap, thickness, band alignment and charge transport to achieve this target are discussed in detail. Further challenges and issues are also illustrated, together with prospects for future development. Understanding these fundamentals, embracing recent breakthroughs and exploring future prospects pave the way toward the rational design and development of high-performance PSC and PeLED devices.

Controlling the Growth of Cs2PbX4 Nanostructures Enhances the Stability of Inorganic Cesium-Based Perovskite Solar Cells for Potential Low Earth Orbit Applications

Incorporating low-dimensional (LD) materials in perovskite solar cells (PSCs) for interfacial engineering is an effective approach to enhance device performance. However, the growth mechanisms for inorganic LD perovskite nanostructures in cesium-based systems via solution processing are underexplored. This work demonstrates the importance of controlling solvent evaporation dynamics during solution processing to modulate Cs2PbX4 nanomorphology. An evolution of growing Cs2PbX4 nanostructures is demonstrated on CsPbI2Br thin films. Cs2PbX4 nanostructures at CsPbI2Br grain boundaries introduce a passivation effect, improving interfacial quality with the hole transport layer (HTL). Systematic characterization reveals that careful engineering of LD nanostructures strongly impacts the optoelectronic properties of PSCs. Optimized CsPbI2Br/Cs2PbX4 heterostructures enhance the power conversion efficiency (PCE) from an average of 10.8% to 13.5%, achieving a 25% improvement over devices without interfacial engineering. Under a 100 h photovoltaic aging test, the PCE of the control device degraded by 30.7%, whereas the CsCl-treated devices retained 98% of their PCE from the start of the measurement. Post-proton-irradiated PSCs based on Cs2PbX4-modified CsPbI2Br retain up to 96% of their initial PCE of 12.2% after exposure to low Earth orbit-like conditions, maintaining a PCE of 11.7%. In contrast, the control device exhibits significant degradation, with the PCE dropping from 11.5% to 3.1%. These findings deepen our understanding of controlling the morphology of inorganic LD nanomaterials via a solution process. The promising stability of PSCs after interfacial engineering highlights their potential for robust performance under harsh conditions.

Advances in perovskite-based neuromorphic computing devices

Neuromorphic computing devices, inspired by the architecture and functionality of the human brain, offer a promising solution to the limitations imposed by the von Neumann bottleneck on contemporary computing systems. Perovskite materials are widely used in the photosensitive layer of neuromorphic computing devices due to their high light absorption coefficient and excellent carrier mobility. Here, we summarise the latest research progress on neural morphology computing devices based on perovskite materials with different structures and summarise different application scenarios. Finally, we discussed the issues that still need to be addressed and looked forward to the future development of neural morphology calculations based on perovskite materials.

Heat-Triggered Dynamic Self-Healing Framework for Variable-Temperature Stable Perovskite Solar Cells

Metal halide perovskite solar cells (PSCs) are promising as the next-generation photovoltaic technology. However, the inferior stability under various temperatures remains a significant obstacle to commercialization. Here, a heat-triggered dynamic self-healing framework (HDSF) is implemented to repair defects at grain boundaries caused by thermal variability, enhancing PSCs' temperature stability. HDSF, distributed at the grain boundaries and surface of the perovskite film, stabilizes the perovskite lattice and releases the perovskite crystal stress through the dynamic exchange reaction of sulfide bonds. The resultant PSCs achieved a power-conversion efficiency (PCE) of 26.32% (certified 25.84%) with elevated temperature stability, retaining 88.7% of the initial PCE after 1000 h at 85 °C. In a variable temperature cycling test (between -40 and 80 °C), the HDSF-treated device retained 87.6% of its initial PCE at -40 °C and 92.6% at 80 °C after 160 thermal cycles. This heat-triggered dynamic self-healing strategy could significantly enhance the reliability of PSCs in application scenarios.

Double-Chain Copolymer Network via In Situ Polymerization Enables High-Stability and Lead-Safe Perovskite Solar Cells

Lead halide perovskite solar cells (PSCs) have made significant progress due to their low cost and high efficiency. However, the long-term stability and lead toxicity of PSCs remain a huge challenge for further commercialization. Herein, we designed a multifunctional additive, poly(amide ester) (PAE), with photosensitive properties to overcome these difficulties. A unique double-chain copolymer network can be constructed via in situ polymerization induced by ultraviolet (UV) light. The multiple active sites in the polymer chains can passivate various defects and enhance charge transfer. Meanwhile, the vast network provides an effective defense for perovskite to stabilize the internal structure and resist harsh external environments, thus delaying the degradation of devices and maximizing the suppression of toxic lead leakage. Remarkably, the devices protected by the network achieved a champion power conversion efficiency (PCE) of 26.20% (certified as 25.69%), the unencapsulated devices suppressed 80% of lead leakage, and the encapsulated devices maintained 93% of the initial PCE after 1000 h in a humid and thermal environment (65 °C and 85% RH).

Photochromic Control in Hybrid Perovskite Photovoltaics

The application of perovskite photovoltaics is hampered by issues related to the operational stability upon exposure to external stimuli, such as voltage bias and light. The dynamic control of the properties of perovskite materials in response to light could ensure the durability of perovskite solar cells, which is especially critical at the interface with charge-extraction layers. We have applied a functionalized photochromic material based on spiro-indoline naphthoxazine at the interface with hole-transport layers in the corresponding perovskite solar cells with the aim of stabilizing them in response to voltage bias and light. We demonstrate photoinduced transformation by a combination of techniques, including transient absorption spectroscopy and Kelvin probe force microscopy. As a result, the application of the photochromic derivative offers improvements in photovoltaic performance and operational stability, highlighting the potential of dynamic photochromic strategies in perovskite photovoltaics.

Unveiling the Local Fate of Charge Carriers in Halide Perovskite Thin Films via Correlation Clustering Imaging

As the field of metal halide perovskites matures, a range of compositionally different perovskite films has found a place in efficient optoelectronic devices. These films feature variable local structural stability, carrier diffusion, and recombination, while there is still a lack of easy-to-implement generic protocols for high-throughput characterization of these variable properties. Correlation clustering imaging (CLIM) is a recently developed tool that resolves peculiarities of local photophysics by assessing the dynamics of photoluminescence detected by wide-field optical microscopy. We demonstrate the capability of CLIM as a high-throughput characterization tool of perovskite films using MAPbI3 (MAPI) and triple cation mixed halide (TCMH) perovskites as examples where it resolves the interplay of carrier diffusion, recombination, and defect dynamics. We found significant differences in the appearance of metastable defect states in these two films. Despite a better surface quality and larger grain size, MAPI films showed more pronounced effects of fluctuating defect states than did TCMH films. As CLIM shows a significant difference between materials known to lead to different solar cell efficiencies, it can be considered a tool for quality control of thin films for perovskite optoelectronic devices.

Suppression of Stacking Faults for Stable Formamidinium-Rich Perovskite Absorbers

The poor intrinsic perovskite absorber stability is arguably a central limitation challenging the prospect of commercialization for photovoltaic (PV) applications. Understanding the nanoscopic structural features that trigger instabilities in perovskite materials is essential to mitigate device degradation. Using nanostructure characterization techniques, we observe the local degradation to be initiated by material loss at stacking faults, forming inherently in the (011)-faceted perovskite domains in different formamidinium lead triiodide perovskite compositions. We introduce Ethylene Thiourea (ETU) as an additive into the perovskite precursor, which manipulates the perovskite crystal growth and results in dominantly in-and out-of-plane (001) oriented perovskite domains. Combining in-depth experimental analysis and density functional theory calculations, we find that ETU lowered the perovskite formation energy, readily enabling crystallization of the perovskite phase at room temperature without the need for an antisolvent quenching step. This facilitated the fabrication of high-quality large area 5 cm by 5 cm blade-coated perovskite films and devices. Encapsulated and unmasked ETU-treated devices, with an active area of 0.2 cm2, retained > 93 % of their initial power conversion efficiency (PCE) for > 2100 hours at room temperature, and additionally, 1 cm2 ETU-treated devices maintained T80 (the duration for the PCE to decay to 80 % of the initial value) for > 600 hours at 65 °C, under continuous 1-sun illumination at the maximum power point in ambient conditions. Our demonstration of scalable and stable perovskite solar cells represents a promising step towards achieving a reliable perovskite PV technology.

Decoding recombination dynamics in perovskite solar cells: an in-depth critical review

The remarkable optoelectronic properties of metal halide perovskites (MHPs) have established them as highly promising photovoltaic absorber materials, propelling the rapid advancement of perovskite solar cells (PSCs) that outperform many traditional alternatives in terms of power conversion efficiency (PCE). However, despite their advancements, PSC devices encounter significant non-radiative recombination losses, encompassing trap-assisted (Shockley-Read-Hall) recombination in bulk and interfaces of PSCs, which restricts their open-circuit voltage (VOC) and overall PCE, dragging it below the Shockley-Queisser (SQ) limit. The ongoing debate regarding the role of grain boundary (GB) recombination, whether it primarily manifests as bulk or surface recombination, has spurred extensive research aimed at elucidating these mechanisms. This review provides a critical comprehensive analysis of the thermodynamic correlations related to VOC losses, bridging the gap between the theoretical SQ limit and practical device performance. Subsequently, it delves into recent findings that aim to decipher the multifaced nature and origin of radiative and non-radiative recombination-induced losses within the device stack, assessing their impacts on overall performance. Furthermore, this review emphasizes the application of advanced machine learning techniques to discern dominant recombination mechanisms in PSCs. Finally, it summarizes the notable advanced strategies to mitigate undesirable non-radiative recombination losses, which pave the way to the thermodynamic efficiency limit.

A theoretical study of the molecular passivation of p-/n-type defects on tin- and germanium-mixed perovskite surfaces using Lewis base/acid

Perovskite solar cells have been attracting considerable attention because of their high power conversion efficiency (PCE). However, their efficiency is compromised by the defect sites on the perovskite surfaces, where charge carriers (excitons) are trapped and recombined. In this study, based on the density functional theory method, we theoretically explore a molecular passivation process for coating a perovskite surface to reduce the defect concentration. This study focuses on Pb-free perovskite materials, such as MASnI3, MAGeI3, and MASn0.5Ge0.5I3 (MA = CH3NH3), employing ethylenediamine and iodopentafluorobenzene as excellent passivation molecules. Our theoretical calculations show that the adsorption of these passivation molecules on the Pb-free perovskite surfaces could remove defect energy levels from the bandgap. Particularly, we discuss the effectiveness of a Lewis base to reduce deep defect levels for a Sn-Ge-mixed perovskite. Furthermore, we present a molecule-defect-level interaction model to understand the passivation mechanism, focusing on the chemical effects of Lewis bases/acids.

Healing Trap States of Anomalous Antisite Defects via Surface Passivation in Lead Iodide Perovskites: A First-Principles Study

Undesirable loss of open-circuit voltage and current of metal halide perovskite (MHP) solar cells are closely associated with defects, so theoretical calculations have been often performed to scrutinize the nature of defects in bulk of MHPs. Yet, exploring the properties of defects at surfaces of MHPs is severely lacking given the complexity of the surface defects with high concentrations. In this study, IPb (PbI) antisite defects, namely one Pb (I) site being occupied by one I (Pb) atom at the surfaces of the FAPbI3 (FA=CH(NH2)2) material, are found to create electron (hole) traps when the surfaces with IPb (PbI) antisite defects are negatively (positively) charged. These are in sharp contrast to the conventional viewpoint that electron (hole) traps are induced by positively (negatively) charged defects. The reasons are discovered through Bader charge analysis, suggesting that there is deficient (excessive) electron charge in the vicinity of the IPb (PbI) defects with respect to the case in pristine surface of FAPbI3 material. Such understanding is then used as guidelines for effectively healing the anomalous IPb (PbI) antisite defects according to Lewis acid-base chemistry, which is exampled by passivating theophylline (C60) molecules on defective surfaces of the FAPbI3 material.

On the Interplay of Electronic and Lattice Screening on Exciton Binding in Two-Dimensional Lead Halide Perovskites

We use path integral Monte Carlo to study the energetics of excitons in layered, hybrid organic-inorganic perovskites in order to elucidate the relative contributions of dielectric confinement and electron-phonon coupling. While the dielectric mismatch between polar perovskite layers and nonpolar ligand layers significantly increases the exciton binding energy relative to their three-dimensional bulk crystal counterparts, formation of exciton polarons attenuates this effect. The contribution from polaron formation is found to be a nonmonotonic function of the lead halide layer thickness, which is clarified by a general variational theory. Accounting for both of these effects provides a description of exciton binding energies in good agreement with experimental measurements. By studying isolated layers and stacked layered crystals of various thicknesses, with ligands of varying polarity, we provide a systematic understanding of the excitonic behavior of this class of materials and how to engineer their photophysics.

Spectro-Microscopy Methods To Gain a Multimodal Perspective

Combining spectroscopic techniques with spatially-resolved microscopy capabilities creates an avenue for in-depth investigations into understanding the impact of specific regions and features across surfaces and their relevance for resulting device performance. For device optimization and development, these techniques can be utilized as a means to identify the impacts and roles of the underlying defects and charge extraction across interfaces. Here, we highlight the ways that (correlated) spectro-microscopy methods have been utilized within the field of materials science to understand materials properties and the underlying optoelectronic processes dictating device functionality. We also give a perspective on the importance of correlated morphological and spectro-microscopy methods for future device improvement.

Hybrid halide perovskite quantum dots for optoelectronics applications: recent progress and perspective

Nanotechnology has transformed optoelectronics through quantum dots (QDs), particularly metal halide perovskite QDs (PQDs). PQDs boast high photoluminescent quantum yield, tunable emission, and excellent defect tolerance without extensive passivation. Quantum confinement effects, which refer to the phenomenon where the motion of charge carriers is restricted to a small region, produce discrete energy levels and blue shifts in these materials. They are ideal for next-generation optoelectronic devices prized for superior optical properties, low cost, and straightforward synthesis. In this review, along with the fundamental physics behind the phenomenon, we have covered advances in synthesis methods such as hot injection, ligand-assisted reprecipitation, ultrasonication, solvothermal, and microwave-assisted that enable precise control over size, shape, and stability, enhancing their suitability for LEDs, lasers, and photodetectors. Challenges include lead toxicity and cost, necessitating research into alternative materials and scalable manufacturing. Furthermore, strategies like doping and surface passivation that improve stability and emission control are discussed comprehensively, and how lead halide perovskites like CsPbBr3undergo phase transitions with temperature, impacting device performance, are also investigated. We have explored various characterization techniques, providing insights into nanocrystal properties and behaviors in our study. This review highlights PQDs' synthesis, physical and optoelectronic properties, and potential applications across diverse technologies.

Aerosol-Assisted Crystallization Lowers Intrinsic Quantum Confinement and Improves Optoelectronic Performance in FAPbI3 Films

FAPbI3 has emerged as a promising semiconductor for photovoltaic applications offering a suitable bandgap for single-junction cells and high chemical stability. However, device efficiency is negatively affected by intrinsic quantum confinement (QC) effects that manifest as additional peaks in the absorption spectra. Here, we show that aerosol-assisted crystallization is an effective method to improve crystallinity and suppresses regions exhibiting QC in FAPbI3. We demonstrate that films with minimized QC effects exhibit markedly enhanced optoelectronic properties, such as higher charge-carrier mobilities and recombination lifetimes. Films crystallized under an aerosol solvent flow of either a mixture of N,N-dimethylformamide and dimethyl sulfoxide or methylammonium thiocyanate vapor displayed reduced charge-carrier recombination losses and improved diffusion lengths compared to those of thermally annealed control films. Our study indicates clear correlations between suppression of QC features in absorption spectra with optimization of crystallinity and mitigation of internal strain, highlighting pathways toward high-performance solar cells.

Gradient Thermal Annealing Assisted Perovskite Film Crystallization Regulation for Efficient and Stable Photovoltaic-Photodetection Bifunctional Device

Perovskite crystallization regulation is essential to obtain excellent film optoelectronic properties and device performances. However, rapid crystallization during annealing always results in poor perovskite film and easy formation of trap, thereby greatly restricting device performance due to severe non-radiative recombination. Here, an easy and reproducible gradient thermal annealing (GTA) approach is used to regulate the perovskite crystallization. Through a low-temperature initial annealing of GTA, the solvent evaporation is slowed down, thus extending nucleation time and providing a buffer for the rapid crystallization of perovskite grains in the subsequent high-temperature stage. As a result, completely converted and highly crystalline perovskite is obtained with 1.6 times larger grain size, reduced trap density and suppressed non-radiative recombination of photo-generated carriers. The film crystallinity is also enhanced with more advantageous (100) and (111) lattice facets which are favorable for carrier transport. Consequently, the perovskite photodetectors exhibit a large linear dynamic range of 174 dB and an excellent response even under ultra-weak light of 303 pW. Meanwhile, perovskite solar cells achieved increased PCE and maintained 85% of original efficiency after heating at 65 °C for nearly 1000 h under unencapsulated conditions. To the knowledge, this represents the best performance reported for a perovskite photovoltaic-photodetection bifunctional device.

Band Tailoring Enabled Perovskite Devices for X-Ray to Near-Infrared Photodetection

Perovskite semiconductors have shown significant promise for photodetection due to their low effective carrier masses and long carrier lifetimes. However, achieving balanced detection across a broad spectrum-from X-rays to infrared-within a single perovskite photodetector presents challenges. These challenges stem from conflicting requirements for different wavelength ranges, such as the narrow bandgap needed for infrared detection and the low dark current necessary for X-ray sensitivity. To address this, this study have designed a type-II FAPbI3 perovskite-based heterojunction featuring a large energy band offset utilizing narrow bandgap tellurium (Te) semiconductor. This innovative design broadens the detection range into the infrared while simultaneously reducing dark current noise. As-designed device allows for the detection of near infrared band, achieving a detectivity of 6.8 × 109 Jones at 1550 nm. The low dark current enables X-ray sensitivity of up to 1885.1 µC Gy⁻¹ cm⁻2. First-principles calculations confirm the type-II band structure alignment of the heterojunction, and a self-driven response behavior is realized. Moreover, this study have developed a scalable 40 × 1 sensor array, demonstrating the potential for wide-spectrum imaging applications. This work is expected to advance the application of perovskite-based wide-spectrum devices.

Atomistic Origin of Microsecond Carrier Lifetimes at Perovskite Grain Boundaries: Machine Learning-Assisted Nonadiabatic Molecular Dynamics

The polycrystalline nature of perovskites, stemming from their facile solution-based fabrication, leads to a high density of grain boundaries (GBs) and point defects. However, the impact of GBs on perovskite performance remains uncertain, with contradictory statements found in the literature. We developed a machine learning force field, sampled GB structures on a nanosecond time scale, and performed nonadiabatic (NA) molecular dynamics simulations of charge carrier trapping and recombination in stoichiometric and doped GBs. The simulations reveal long, microsecond carrier lifetimes, approaching experimental data, stemming from charge separation at the GBs and small NA coupling, 0.01-0.1 meV. Stoichiometric GBs exhibit transient trap states, which, however, are not particularly detrimental to the carrier lifetime. Halide dopants form interstitial defects in the bulk, but have a stabilizing influence on the GB structure by passivating undersaturated Pb atoms and reducing the transient trap state formation. On the contrary, excess Pb destabilizes GBs, allowing formation of persistent midgap states that trap charges. Still, the charge carrier lifetime reduces relatively little, because the midgap states decouple from the bands, and charges are more likely to escape back into bands upon a GB structural fluctuation. The atomistic study into the structural dynamics of perovskite GBs and its influence on charge carrier trapping and recombination provides valuable insights into the complex properties of perovskites and the intricate role of GBs in the material performance.

Linking Nanoscopic Insights to Millimetric-Devices in Formamidinium-Rich Perovskite Photovoltaics

Halide-perovskite semiconductors have a high potential for use in single-junction and tandem solar cells. Despite their unprecedented rise in power conversion efficiencies (PCEs) for photovoltaic (PV) applications, it remains unclear whether perovskite solar modules can reach a sufficient operational lifetime. In order to make perovskite solar cells (PSCs) commercially viable, a fundamental understanding of the relationship between their nanostructure, optoelectronic properties, device efficiency, and long-term operational stability/reliability needs to be established. In this review, the phase instabilities in state-of-the-art formamidinium (FA)-rich perovskite absorbers is discussed. Furthermore, the concerted efforts are summarized in this prospect, covering aspects from fundamental research to device engineering. Subsequently, a critical analysis of the dictating impact of the nanoscale landscape of perovskite materials on their resulting intrinsic stability is provided. Finally, the remaining challenges in the field are assessed and future research directions are proposed for improving the operational lifetimes of perovskite devices. It is believed that these approaches, which bridge nanoscale structural properties to working solar cell devices, will be critical to assessing the realization of a bankable PSC product.

In Operando Locally-Resolved Photophysics in Perovskite Solar Cells by Correlation Clustering Imaging

The instability of metal halide perovskites limits the commercialization of solar cells despite their impressive efficiencies. This instability, driven by photo-induced ion migration, leads to material restructuring, defect formation, degradation, and defect healing. However, these same "unwanted" properties enable to propose Correlation Clustering Imaging (CLIM), a technique that detects local photoluminescence (PL) fluctuations through wide-field fluorescence microscopy. It is shown that such fluctuations are present in high-quality perovskites and their corresponding solar cells. CLIM successfully visualizes the polycrystalline grain structure in perovskite films, closely matching electron microscopy images. The analysis of fluctuations reveals a dominant metastable defect responsible for the fluctuations. In solar cells in short-circuit conditions, these fluctuations are significantly larger, and corresponding correlated regions extend up to 10 micrometers, compared to 2 micrometers in films. It is proposed that the regions resolved by CLIM in solar cells possess a common pool of charge extraction channels, which fluctuate and cause PL to vary. Since PL fluctuations reflect non-radiative recombination processes, CLIM provides valuable insights into the structural and functional dynamics of carrier transport, ion migration, defect behavior, and recombination losses. CLIM offers a non-invasive approach to understanding luminescent materials and devices in operando, utilizing contrasts based on previously untapped properties.

Point defects at grain boundaries can create structural instabilities and persistent deep traps in metal halide perovskites

Metal halide perovskites (MHPs) have attracted strong interest for a variety of applications due to their low cost and excellent performance, attributed largely to favorable defect properties. MHPs exhibit complex dynamics of charges and ions that are coupled in unusual ways. Focusing on a combination of two common MHP defects, i.e., a grain boundary (GB) and a Pb interstitial, we developed a machine learning model of the interaction potential, and studied the structural and electronic dynamics on a nanosecond timescale. We demonstrate that point defects at MHP GBs can create new chemical species, such as Pb-Pb-Pb trimers, that are less likely to occur with point defects in bulk. The formed species create structural instabilities in the GB and prevent it from healing towards the pristine structure. Pb-Pb-Pb trimers produce deep trap states that can persist for hundreds of picoseconds, having a strong negative influence on the charge carrier mobility and lifetime. Such stable chemical defects at MHP GBs can only be broken by chemical means, e.g., the introduction of excess halide, highlighting the importance of proper defect passivation strategies. Long-lived GB structures with both deep and shallow trap states are found, rationalizing the contradictory statements in the literature regarding the influence of MHP GBs on performance.

Mitigation of Self-p-Doping and Off-Centering Effect in Tin Perovskite via Strontium Doping

Tin-based perovskite solar cells offer a less toxic alternative to their lead-based counterparts. Despite their promising optoelectronic properties, their performances still lag behind, with the highest power conversion efficiencies reaching around 15%. This efficiency limitation arises primarily from electronic defects leading to self-p-doping and stereochemical activity of the Sn(II) ion, which distorts the atomic arrangement in the material. In this study, we investigate the effect of strontium doping in tin-based perovskite on the distortion of the material's structure and its optoelectronic properties. Using a combination of Density Functional Theory calculations and experiments, we demonstrate that strontium doping reduces p-doping and structural strain. This approach improves the efficiency from 6.3% in undoped devices to 7.5% in doped devices without relying on dimethyl sulfoxide, a harmful solvent for tin-based perovskites. This method could enable precise control of tin off-centering and self-p-doping, advancing the development of efficient and stable tin perovskite solar cells.

An Orientation-Enhanced Interlayer Enables Efficient Sn-Pb Binary Perovskite Solar Cells and All-Perovskite Tandem Solar Cells with High Fill Factors

The performance of narrow-bandgap (NBG) perovskite solar cells (PSCs) is limited by the severe nonradiative recombination and carrier transport barrier at the electron selective interface. Here, we reveal the importance of the molecular orientation for effective defect passivation and protection for Sn2+ at the perovskite/C60 interface. We constructed an internally self-anchored dual-passivation (ISADP) layer, where the orientation of PCBM can be significantly enhanced by the interaction between ammonium and carbonyl groups. It can facilitate the contact with C60 and minimize the nonradiative energy loss at the electron transport interface. This strategy remarkably enhances the FF of NBG PSCs, from 77.45% to 82.88%, and the power conversion efficiency (PCE) from 20.67% to 24.02%. Moreover, monolithic all-perovskite TSCs exhibit a high certified PCE (under reverse scan) of 28.12% and a record FF of 84.25%. This work opens up a new pathway for enhancing the performance of monolithic all-perovskite TSCs.

A facile approach for fabricating efficient and stable perovskite solar cells

Perovskite solar cells (PSCs) with high power conversion efficiencies (PCEs) can be produced using a variety of methods, such as different fabrication methods, device layout modification, and component and interface engineering. The efficiency of a perovskite solar cell is largely dependent on the overall quality of the perovskite thin-film in every scenario. The utilization of spin-coating followed by the antisolvent pouring (ASP) method is prevalent in nearly all fabrication techniques to achieve superior perovskite thin-films. Nevertheless, there are a few guidelines that must be followed precisely when using the ASP approach, including the antisolvent amount, duration, and area for dropping. The aforementioned challenging and necessary strategies frequently result in perovskite thin-films with pinholes, tiny grains, and broad grain boundaries, which impair the performance of PSCs. Therefore, the implementation of a straightforward approach that does not require the use of such complex ASP steps is crucial. Here, we employ a simple process that involves the hot-dipping of lead iodide (PbI2) thin-films in a hot solution of methylammonium iodide (MAI) and formamidinium iodide (FAI) in isopropanol (IPA) to produce high-quality perovskite thin-films. As the time required for the desired perovskite to crystallize is critical, we carefully examined various hot-dipping process times, such as 10 seconds, 20 seconds, 30 seconds, and 40 seconds. These time intervals yielded thin-films, which were named PSK-10, PSK-20, PSK-30, and PSK-40, respectively. Morphological and optoelectronic characterization demonstrated the high quality of the perovskite thin-films obtained through dipping PbI2 for 30 seconds. Consequently, the PSK-30-based PSCs produced higher PCEs of up to 21.52% compared to those of the ASP-based devices (20.79%). Furthermore, the unsealed PSCs prepared with PSK-30 and ASP were assessed for 252 hours at 25 °C and 40-45% relative humidity in order to determine their operational stability. The ASP-based device showed poor stability, retaining only 10% of its original PCE, whereas the PSK-30-based device retained 70% of its initial PCE. These results offer a new and viable approach for producing highly efficient and stable PSCs.

Resonance-Assisted Self-Doping in Robust Open-Shell Ladder-Type Oligoaniline Analogues

A novel resonance-assisted self-doping mechanism has been demonstrated in ladder-type oligoaniline-derived organic conductors. The new class of compounds has a unique structure incorporating acidic phenolic hydroxyl groups into the ladder-type cyclohexadiene-1,4-diimine core, enabling efficient resonance-assisted proton transfer and electronic doping without the need for external dopants. Mechanistic and computational studies confirm the open-shell, zwitterionic nature of the self-doped state and the significant role played by the dielectric environment. This new self-doping mechanism allows for higher stability and durability in the material's electronic performance. The self-doped form retains durability under harsh conditions and maintains its properties over extended periods of time.

Surface Defects Control Bulk Carrier Densities in Polycrystalline Pb-Halide Perovskites

The (opto)electronic behavior of semiconductors depends on their (quasi-)free electronic carrier densities. These are regulated by semiconductor doping, i.e., controlled "electronic contamination". For metal halide perovskites (HaPs), the functional materials in several device types, which already challenge some of the understanding of semiconductor properties, this study shows that doping type, density and properties derived from these, are to a first approximation controlled via their surfaces. This effect, relevant to all semiconductors, and already found for some, is very evident for lead (Pb)-HaPs because of their intrinsically low electrically active bulk and surface defect densities. Volume carrier densities for most polycrystalline Pb-HaP films (<1 µm grain diameter) are below those resulting from even < 0.1% of surface sites being electrically active defects. This implies and is consistent with interfacial defects controlling HaP devices in multi-layered structures with most of the action at the two HaP interfaces. Surface and interface passivation effects on bulk electrical properties are relevant to all semiconductors and are crucial for developing those used today. However, because bulk dopant introduction in HaPs at controlled ppm levels for electronic-relevant carrier densities is so difficult, passivation effects are vastly more critical and dominate, to first approximation, their optoelectronic characteristics in devices.

Enhanced Responsivity and Photostability of Cs3Bi2I9-Based Self-Powered Photodetector via Chemical Vapor Deposition Engineering

Lead-based halide perovskites have gained significant prominence in recent years in optoelectronics and photovoltaics, owing to their exceptional optoelectronic properties. Nonetheless, the toxicity of lead (Pb) and the stability concern pose obstacles to their potential for future large-scale market development. Herein, stable lead-free Cs3Bi2I9 (CBI) films are presented with smooth and compact morphologies synthesized via chemical vapor deposition (CVD), demonstrating their application as an UV photodetector in a self-powered way. The self-powered photodetectors (SPDs) exhibit remarkable characteristics, including a responsivity of 1.57 A W-1 and an impressive specific detectivity of 3.38 × 1013 Jones under the illumination of 365 nm at zero bias. Furthermore, the SPDs exhibit a nominal decline (≈2.2%) in the photocurrent under constant illumination over 500 h, highlighting its impressive long-term operational stability. Finally, the real-time UV-detection capability of the device is demonstrated by measuring the photocurrent under various conditions, including room light and sunlight at different times. These findings offer a new platform for synthesizing stable and high-quality perovskite films, and SPDs for advancing the development of wearable and portable electronics.

Imaging Locally Inhomogeneous Properties of Metal Halide Perovskites

Metal halide perovskites (MHPs) are a perfect example of state-of-the-art photovoltaic materials whose compositional and structural diversity, coupled with utilization of low-temperature processing, can undesirably result in spatially inhomogeneous properties that locally vary within the material. This complexity of MHPs requires sensitive imaging characterization methods at the microscopic level to gauge the impact of such inhomogeneities on device performance and to formulate mitigation strategies. This review consolidates properties of MHPs that are susceptible to local variations and highlights appropriate imaging techniques that can be employed to map them. Inhomogeneities in morphology, emission, electrical response, and chemical composition of MHP thin films are specifically considered, and possible microscopic techniques for their visualization are reviewed. For each type of microscopy, a short discussion about spatial resolution, sample requirements, advantages, and limitations is provided, thus leaving the reader with a guide of available imaging characterization tools to evaluate inhomogeneities of their MHPs.

Electrical Doping Regulation of Carrier Recombination Enhances the Perovskite Solar Cell Efficiency beyond 28

With the power conversion efficiency (PCE) of perovskite solar cells (PSCs) exceeding 26.7%, achieving further enhancements in device performance has become a key research focus. Here, we investigate the impact of electrical doping in the perovskite layer using the drift-diffusion equation-based device physics model, coupled with a self-developed equivalent circuit model. Our results demonstrate that electrical doping can increase the PCE from 24.78% to >28%. In-depth theoretical analysis reveals that these improvements in performance are driven by the modulation of carrier recombination processes through doping, leading to significant increases in the open-circuit voltage and fill factor. Additionally, we explore the influence of physical parameters on device performance. Our study identifies an optimal doping concentration range from 1.0 × 1017 to 1.0 × 1019 cm-3 and a transport layer mobility of >0.01 cm2 V-1 s-1. This work provides a theoretical foundation for the development of ultra-high-performance PSCs through targeted electrical doping strategies.

Recent advances in artificial neuromorphic applications based on perovskite composites

High-performance perovskite materials with excellent physical, electronic, and optical properties play a significant role in artificial neuromorphic devices. However, the development of perovskites in microelectronics is inevitably hindered by their intrinsic non-ideal properties, such as high defect density, environmental sensitivity, and toxicity. By leveraging materials engineering, integrating various materials with perovskites to leverage their mutual strengths presents great potential to enhance ion migration, energy level alignment, photoresponsivity, and surface passivation, thereby advancing optoelectronic and neuromorphic device development. This review initially provides an overview of perovskite materials across different dimensions, highlighting their physical properties and detailing their applications and metrics in two- and three-terminal devices. Subsequently, we comprehensively summarize the application of perovskites in combination with other materials, including organics, nanomaterials, oxides, ferroelectrics, and crystalline porous materials (CPMs), to develop advanced devices such as memristors, transistors, photodetectors, sensors, light-emitting diodes (LEDs), and artificial neuromorphic systems. Lastly, we outline the challenges and future research directions in synthesizing perovskite composites for neuromorphic devices. Through the review and analysis, we aim to broaden the utilization of perovskites and their composites in neuromorphic research, offering new insights and approaches for grasping the intricate physical working mechanisms and functionalities of perovskites.

Transient Exciton-Charge Interconversion in Single-Crystal Hybrid Perovskites

Ultrafast oscillatory transient absorption (TA) dynamics are observed in single crystals of hybrid organic-inorganic perovskite (CH3NH3)PbX3 with X = I, Br, Cl. High-density photoinduced charges, low binding energy of the excitons, efficient generation and high mobility of charges, and long diffusion length of both excitons and charges led to transient interconversion between excitons and charges with high efficiency, which is responsible for the oscillatory TA dynamics at re-excitation by the probe pulses. The pump pulses initiated a quasi-equilibrium scheme of coexisting excitons and charges with high densities, the probe pulse triggered a perturbation through interconversion between these two kinds of excited "particles," which was overlapped on the intrinsic exciton relaxation dynamics, producing an oscillatory modulation with time delay. This not only reveals important photoelectronic processes with determined time scales, but also supplies physics for applications of this group of materials.

Overcoming the Open-Circuit Voltage Losses in Narrow Bandgap Perovskites for All-Perovskite Tandem Solar Cells

Narrow-bandgap (NBG) perovskite solar cells based on tin-lead mixed perovskite absorbers suffer from significant open-circuit voltage (V OC) losses due primarily to a high defect density and charge carrier recombination at the device interfaces. In this study, the V OC losses in NBG perovskite single junction cells (E g = 1.21 eV) are addressed. The optimized NBG subcell is then used to fabricate highly efficient all-perovskite tandem solar cells (TSCs). The improvement in the V OC is achieved via the addition of a thin poly(triarylamine) interlayer between the poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)-based hole transport layer (HTL) and the NBG perovskite. The optimal bilayer HTL results in a champion power conversion efficiency (PCE) of 20.3%, compared to 17.8% of the PEDOT:PSS-based control device. The V OC improvement of the single-junction NBG cell is also successfully transferred to all-perovskite TSC, resulting in a high V OC of 2.00 V and a PCE of 25.1%.

Ultra-Long Carrier Lifetime of Spiral Perovskite Nanowires Realized through Cooperative Strategy of Selective Etching and Passivation

Spiral inorganic perovskite nanowires (NWs) possess unique morphologies and properties that allow them highly attractive for applications in optoelectronic and catalytic fields. In popular solution-based synthesis methodology, however, challenges persist in simultaneously achieving precise and facile control over morphological twisting and fantastic carrier lifetimes. Here, a cooperative strategy of concurrently employing selective etching and ligand engineering is applied to facilitate the formation of spiral CsPbBr3 perovskite NWs with an ultralong carrier lifetime of ≈2 µs. Specifically, a novel amine of 1-(p-tolyl)ethanamine is introduced to functionalize as both a selective etchant and the source of forming an effective ligand to passivate the exposed facets, favoring the structural twisting and the enhancement of carrier lifetimes. The twisting behaviors are dependent on the etch ratios, which are essentially associated with the densities of grain boundaries and dislocations in the NWs. The ultralong carrier lifetime and long-term stability of the spiral NWs open up new possibilities for all-inorganic perovskites in optoelectronic and photocatalytic fields, while the cooperative synthesis strategy paves the way for exploring complex spiral structures with tunable morphology and functionality.

The impact of interfacial quality and nanoscale performance disorder on the stability of alloyed perovskite solar cells

Microscopy provides a proxy for assessing the operation of perovskite solar cells, yet most works in the literature have focused on bare perovskite thin films, missing charge transport and recombination losses present in full devices. Here we demonstrate a multimodal operando microscopy toolkit to measure and spatially correlate nanoscale charge transport losses, recombination losses and chemical composition. By applying this toolkit to the same scan areas of state-of-the-art, alloyed perovskite cells before and after extended operation, we show that devices with the highest macroscopic performance have the lowest initial performance spatial heterogeneity-a crucial link that is missed in conventional microscopy. We show that engineering stable interfaces is critical to achieving robust devices. Once the interfaces are stabilized, we show that compositional engineering to homogenize charge extraction and to minimize variations in local power conversion efficiency is critical to improve performance and stability. We find that in our device space, perovskites can tolerate spatial disorder in chemistry, but not charge extraction.

Strategic Buried Defect Passivation of Perovskite Emitting Layers by Guanidinium Chloride for High-Performance Pure Blue Perovskite Light Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) show promise for high-definition displays due to their exceptional electroluminescent properties. However, the performance of pure blue PeLEDs is hindered by the unfavorable ionic behavior of halides and the presence of defective antisites in blue-emitting perovskite materials. An unstable buried interface between charge transport layers and the perovskite emitting layer is a major issue that limits carrier transport and recombination behavior in PeLEDs. In this study, effective buried defect passivation of pure blue perovskite emitting layers by introducing guanidinium chloride (GACl) as a bottom-passivating layer is demonstrated. The GACl bottom layer not only passivates the point defects present at the buried interface but also provides chloride anions to suppress ion migration and halide vacancy formation. Along with the defect passivation, GACl also enforces phase purity of 2D layered structure in the perovskite emitting layers to improve crystallinity and optoelectronic properties. As a result, the PeLEDs with high brightness (1200 cd m-2) and excellent external quantum efficiency (6.61%) are achieved at a spectrally stable pure blue electroluminescence at 471 nm (band width = 17.63 nm). This study offers insights into the straightforward way for effective buried passivation for preparing high-performance PeLEDs.

2D Phase Formation on 3D Perovskite: Insights from Molecular Stiffness

Several studies have demonstrated that low-dimensional structures (e.g., two-dimensional (2D)) associated with three-dimensional (3D) perovskite films enhance the efficiency and stability of perovskite solar cells. Here, we aim to track the formation sites of the 2D phase on top of the 3D perovskite and to establish correlations between molecular stiffness and steric hindrance of the organic cations and their influence on the formation and crystallization of 2D/3D. Using cathodoluminescence combined with a scanning electron microscopy technique, we verified that the formation of the 2D phase occurs preferentially on the grain boundaries of the 3D perovskite. This helps explain some passivation mechanisms conferred by the 2D phase on 3D perovskite films. Furthermore, by employing in situ grazing-incidence wide-angle X-ray scattering, we monitored the formation and crystallization of the 2D/3D perovskite using three cations with varying molecular stiffness. In this series of molecules, the formation and crystallization of the 2D phase are found to be dependent on both steric hindrance around the ammonium group and molecular stiffness. Finally, we employed a 2D/3D perovskite heterointerface in a solar cell. The presence of the 2D phase, particularly those formed from flexible cations, resulted in a maximum power conversion efficiency of 21.5%. This study provides insight into critical aspects related to how bulky organic cations' stiffness and steric hindrance influence the formation, crystallization, and distribution of 2D perovskite phases.

Mapping Spatial Strain Distribution and Its Effects on Optoelectronic Properties in Wrinkled Perovskite Films

Organic-inorganic halide perovskite films, fabricated by using the antisolvent method, have garnered intense attention for their application in high-efficiency and stable solar cells. These films characteristically develop periodic wrinkled microstructures. Previous research has indicated that macroscopic residual strain significantly influences the optoelectronic behaviors of these films. However, the detailed interplay between the wrinkled morphology, strain distribution, and local photophysical properties at the micro- and nanoscale has not been fully elucidated. Here, we explore the microscopic morphology-strain-property relationship within wrinkled perovskite films employing correlative micro-optical and nanoelectrical microscopy techniques. Microphotoluminescence (PL) mapping supplemented by in situ strain PL measurements identifies a heterogeneous spatial strain distribution across the microstructural hills and valleys. Additionally, light-intensity-dependent photoconductive atomic force microscopy reveals that valleys experiencing less compressive strain exhibit a lower conductivity and a higher propensity for ion migration. The findings underscore the potential of targeted strain engineering to optimize the performance and longevity of perovskite solar cells.

Controllable p- and n-type behaviours in emissive perovskite semiconductors

Reliable control of the conductivity and its polarity in semiconductors is at the heart of modern electronics1-7, and has led to key inventions including diodes, transistors, solar cells, photodetectors, light-emitting diodes and semiconductor lasers. For archetypal semiconductors such as Si and GaN, positive (p)- and negative (n)-type conductivities are achieved through the doping of electron-accepting and electron-donating elements into the crystal lattices, respectively1-6. For halide perovskites, which are an emerging class of semiconductors, mechanisms for reliably controlling charge conduction behaviours while maintaining high optoelectronic qualities are yet to be discovered. Here we report that the p- and n-type characteristics in a wide-bandgap perovskite semiconductor can be adjusted by incorporating a phosphonic acid molecular dopant with strong electron-withdrawing abilities. The resultant carrier concentrations were more than 1013 cm-3 for the p- and n-type samples, with Hall coefficients ranging from -0.5 m3 C-1 (n-type) to 0.6 m3 C-1 (p-type). A shift of the Fermi level across the bandgap was observed. Importantly, the transition from n- to p-type conductivity was achieved while retaining high photoluminescence quantum yields of 70-85%. The controllable doping in the emissive perovskite semiconductor enabled the demonstration of ultrahigh brightness (more than 1.1 × 106 cd m-2) and exceptional external quantum efficiency (28.4%) in perovskite light-emitting diodes with a simple architecture.

Suppressed Defects by Functional Thermally Cross-Linked Fullerene for High-Efficiency Tin-Lead Perovskite Solar Cells

Mixed tin-lead (Sn-Pb) perovskites have attracted the attention of the community due to their narrow bandgap, ideal for photovoltaic applications, especially tandem solar cells. However, the oxidation and rapid crystallization of Sn2+ and the interfacial traps hinder their development. Here, cross-linkable [6,6]-phenyl-C61-butyric styryl dendron ester (C-PCBSD) is introduced during the quenching step of perovskite thin film processing to suppress the generation of surface defects at the electron transport layer interface and improve the bulk crystallinity. The C-PCBSD has strong coordination ability with Sn2+ and Pb2+ perovskite precursors, which retards the crystallization process, suppresses the oxidation of Sn2+, and improves the perovskite bulk and surface crystallinity, yielding films with reduced nonradiative recombination and enhanced interface charge extraction. Besides, the C-PCBSD network deposited on the perovskite surface displays superior hydrophobicity and oxygen resistance. Consequently, the devices with C-PCBSD obtain PCEs of up to 23.4% and retained 97% of initial efficiency after 2000 h of storage in a N2 atmosphere.

Enhancing Perovskite Solar Cell Performance through Propylamine Hydroiodide Passivation

In recent years, the power conversion efficiency of perovskite solar cells has increased rapidly. Perovskites can be prepared using simple and cost-effective solution methods. However, the perovskite films obtained are usually polycrystalline and contain numerous defects. Passivation of these defects is crucial for enhancing the performance of solar cells. Here, we report the use of propylamine hydroiodide (PAI) for defect passivation. We found that PAI can result in higher-efficiency cells by reducing the defects and suppressing non-radiative recombination. Consequently, n-i-p perovskite solar cells with a certificated efficiency of 21% were obtained. In addition, PAI exhibited excellent performance in p-i-n devices by serving as a buried interface layer, leading to an improved efficiency of 23%.

Improving FAPbBr3 Perovskite Crystal Quality via Additive Engineering for High Voltage Solar Cell over 1.5 V

Lead bromide-based perovskites are promising materials as the top cells of tandem solar cells and for application in various fields requiring high voltages owing to their wide band gaps and excellent environmental resistances. However, several factors, such as the formation of bulk and surface defects, impede the performances of corresponding devices, thereby limiting the efficiencies of these devices as single-junction devices. To reduce the number of defect sites, urea is added to the formamidinium lead bromide (FAPbBr3) perovskite material to increase its grain size. Nevertheless, urea undesirably reacts with lead(II) bromide (PbBr2) in the perovskite structure, creating unfavorable impurities in the device. To solve this problem, herein, in addition to urea, we introduced formamidinium chloride (FACl) into FAPbBr3. Owing to the synergistic effect of urea and FACl, the FAPbBr3 film quality effectively improved due to suppression of the generation of impurities and stabilization of film crystallinity. Consequently, the FAPbBr3 single-junction solar cell constructed using FACl and urea as additives demonstrated a power conversion efficiency of 9.6% and an open-circuit voltage of 1.516 V with negligible hysteresis. This study provides new insights into the use of additive engineering for overcoming the energy losses caused by defects in perovskite films.

Ultrafast Photoexcitation Induced Passivation for Quasi-2D Perovskite Photodetectors

Quasi-2D perovskites exhibit great potential in photodetectors due to their exceptional optoelectronic responsivity and stability, compared to their 3D counterparts. However, the defects are detrimental to the responsivity, response speed, and stability of perovskite photodetectors. Herein, an ultrafast photoexcitation-induced passivation technique is proposed to synergistically reduce the dimensionality at the surface and induce oxygen doping in the bulk, via tuning the photoexcitation intensity. At the optimal photoexcitation level, the excited electrons and holes generate stretching force on the Pb─I bonds at the interlayered [PbI6]-, resulting in low dimensional perovskite formation, and the absorptive oxygen is combined with I vacancies at the same time. These two induced processes synergistically boost the carrier transport and interface contact performance. The most outstanding device exhibits a fast response speed with rise/decay time of 201/627 ns, with a peak responsivity/detectivity of 163 mA W-1/4.52 × 1010 Jones at 325 nm and the enhanced cycling stability. This work suggests the possibility of a new passivation technique for high performance 2D perovskite optoelectronics.

The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites

Grain boundaries (GBs) have a significant role in polycrystalline perovskite solar cells (PSCs). However, there is ongoing debate regarding the impact of GBs on the performance and long-term stability of PSCs. Employing the first-principles molecular dynamics for perovskites, the iodine vacancy defect migrations both in bulk and at GBs are investigated. i) The positive iodine vacancy (VI +) is found that have both lower formation energy (1.4 eV) and activation energy (0.18 eV) than those of neutral iodine vacancy (VI), statistically. It indicated the VI + acts as the dominant migrated iodine vacancy rather than VI; ii) the iodine vacancy at GBs has ≈0.48 eV higher activation energy than those in bulk, which leads to the accumulation of iodine vacancy at GBs; iii) the presence of VI + result in a 3-fold increase in charge recombination ratio at GBs, compared to pristine PSCs. Based on quantum molecular dynamics statistical results, which are consistent with experimental measurements, insights into iodine vacancy migration both at GBs and in the bulk are gained. This understanding can be valuable for defects engineering related to ion migration, in order to improve the long-term stability and promote the performance of PSCs.

What Matters for the Charge Transport of 2D Perovskites?

Compared to 3D perovskites, 2D perovskites exhibit excellent stability, structural diversity, and tunable bandgaps, making them highly promising for applications in solar cells, light-emitting diodes, and photodetectors. However, the trade-off for worse charge transport is a critical issue that needs to be addressed. This comprehensive review first discusses the structure of 3D and 2D metal halide perovskites, then summarizes the significant factors influencing charge transport in detail and provides a brief overview of the testing methods. Subsequently, various strategies to improve the charge transport are presented, including tuning A'-site organic spacer cations, A-site cations, B-site metal cations, and X-site halide ions. Finally, an outlook on the future development of improving the 2D perovskites' charge transport is discussed.

Defects of Metal Halide Perovskites in Photocatalytic Energy Conversion: Friend or Foe?

Photocatalytic solar-to-fuel conversion over metal halide perovskites (MHPs) has recently attracted much attention, while the roles of defects in MHPs are still under debate. Specifically, the mainstream viewpoint is that the defects are detrimental to photocatalytic performance, while some recent studies show that certain types of defects contribute to photoactivity enhancement. However, a systematic summary of why it is contradictory and how the defects in MHPs affect photocatalytic performance is still lacking. In this review, the innovative roles of defects in MHP photocatalysts are highlighted. First, the origins of defects in MHPs are elaborated, followed by clarifying certain benefits of defects in photocatalysts including optical absorption, charge dynamics, and surface reaction. Afterward, the recent progress on defect-related MHP photocatalysis, i.e., CO2 reduction, H2 generation, pollutant degradation, and organic synthesis is systematically discussed and critically appraised, putting emphasis on their beneficial effects. With defects offering peculiar sets of merits and demerits, the personal opinion on the ongoing challenges is concluded and outlining potentially promising opportunities for engineering defects on MHP photocatalysts. This critical review is anticipated to offer a better understanding of the MHP defects and spur some inspiration for designing efficient MHP photocatalysts.

A Double Compatibilization Strategy To Boost the Performance of p-i-n Solar Cells Based on Perovskite Deposited in Humid Ambient Air

Formamidinium lead iodide (FAPI) represents the most promising perovskite for single junction solar cells, exhibiting an impressive performance when deposited in a controlled nitrogen environment. In order to foster the real-world application of this technology, the deposition of FAPI in ambient air is a highly desirable prospect, as it would reduce fabrication costs. This study demonstrates that the wettability of FAPI precursors on the hole transporting layers (HTL) used to fabricate inverted p-i-n solar cells is extremely poor in ambient air, hampering the realization of a perovskite active layer with good optoelectronic quality. To address this issue, herein, a double compatibilization method is developed, which results in the attainment of remarkable performance, exceeding 21%, representing one of the highest reported efficiencies for FAPI solar cells fabricated in humid ambient air. The incorporation of a small quantity of anionic surfactant, comprising a hydrocarbon tail and a polar headgroup, sodium dodecyl sulfate (SDS), in the perovskite solution and an ultrathin layer of alumina nanoparticles on the HTL, results in a significant improvement in the wettability of the FAPI solution. This enables the reproducible deposition of highly homogeneous perovskite films with complete coverage and excellent optical and optoelectronic quality. Furthermore, devices based on FAPI with SDS exhibit enhanced stability, retaining 98% of their initial efficiency after 40 h of continuous illumination.

Size Dependence of Ultrafast Electron Transfer from Didodecyl Dimethylammonium Bromide-Modified CsPbBr3 Nanocrystals to Electron Acceptors

Charge transfer efficiencies in all-inorganic lead halide perovskite nanocrystals (NCs) are crucial for applications in photovoltaics and photocatalysis. Herein, CsPbBr3 NCs with different sizes are synthesized by varying the ligand contents of didodecyl dimethylammonium bromide at room temperature. Adding benzoquinone (BQ) molecules leads to a decrease in the PL intensities and PL decay times in NCs. The electron transfer (ET) efficiency (ηET) increases with NC size in complexes of CsPbBr3 NCs and BQ molecules (NC-BQ complexes), when the same concentration of BQ is maintained, as investigated by transient photobleaching and photoluminescence spectroscopies. Controlling the same number of attached BQ acceptor molecules per NC induces the same ηET in NC-BQ complexes even though with different NC sizes. Our findings provide new insights into ultrafast charge transfer behaviors in perovskite NCs, which is important for designing efficient light energy conversion devices.