1
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Chen M, Liu H, He X, Li M, Tang CS, Sun M, Koirala KP, Bowden ME, Li Y, Liu X, Zhou D, Sun S, Breese MBH, Cai C, Wang L, Du Y, Wee ATS, Yin X. Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures. ACS NANO 2024; 18:27707-27717. [PMID: 39327231 DOI: 10.1021/acsnano.4c09921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 synthesized on a series of single-crystal substrates. Unlike nanofilms synthesized on other substrates, NdNiO3 on SrTiO3 (NNO/STO) gives rise to a unique band structure featuring an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by orbital hybridization between the Ti 3d orbitals of the STO substrate and the O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. These findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin films, thereby offering key insights into tuning their interfacial properties.
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Affiliation(s)
- Mingyao Chen
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Huimin Liu
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Xu He
- Theoretical Materials Physics, Q-MAT, CESAM, Université de Liège, Liège B-4000, Belgium
| | - Minjuan Li
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603, Singapore
| | - Mengxia Sun
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Krishna Prasad Koirala
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Mark E Bowden
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Yangyang Li
- School of Physics, Shandong University, Jinan, Shandong 250100, China
| | - Xiongfang Liu
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Difan Zhou
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Shuo Sun
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Mark B H Breese
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603, Singapore
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore
| | - Chuanbing Cai
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Andrew T S Wee
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research, National University of Singapore, Singapore 117546, Singapore
| | - Xinmao Yin
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
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2
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Men E, Li D, Zhang H, Chen J, Qiao Z, Wei L, Wang Z, Xi C, Song D, Li Y, Jeen H, Chen K, Zhu H, Hao L. An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures. Nat Commun 2024; 15:8427. [PMID: 39341802 PMCID: PMC11439077 DOI: 10.1038/s41467-024-52616-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 09/12/2024] [Indexed: 10/01/2024] Open
Abstract
All-insulator heterostructures with an emerging metallicity are at the forefront of material science, which typically contain at least one band insulator while it is not necessary to be. Here we show emergent phenomena in a series of all-correlated-insulator heterostructures that composed of insulating CaIrO3 and insulating La0.67Sr0.33MnO3. We observed an intriguing insulator-to-metal transition, that depends delicately on the thickness of the iridate component. The simultaneous enhancements of magnetization, electric conductivity, and magnetoresistance effect indicate a percolation-type nature of the insulator-to-metal transition, with the percolation threshold can be reached at an exceptionally low volume fraction of the iridate. Such a drastic transition is induced by an interfacial charge transfer, which interestingly alters the electronic and crystalline structures of the bulk region rather than the limited ultrathin interface. We further showcased the central role of effective correlation in modulating the insulator-to-metal transition, by demonstrating that the critical thickness of iridate for triggering the metallic state can be systematically reduced down to a single unit-cell layer.
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Affiliation(s)
- Enyang Men
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Deyang Li
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Haiyang Zhang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Jingxin Chen
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Zhihan Qiao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Long Wei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
| | - Zhaosheng Wang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
| | - Chuanying Xi
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
| | - Dongsheng Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, China
| | - Yuhan Li
- Department of Physics, Beijing Normal University, Beijing, China
| | - Hyoungjeen Jeen
- Department of Physics, Pusan National University, Busan, South Korea
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China.
| | - Hong Zhu
- Department of Physics, University of Science and Technology of China, Hefei, China.
| | - Lin Hao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China.
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3
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Chen X, Yu T, Liu Y, Sun Y, Lei M, Guo N, Fan Y, Sun X, Zhang M, Alarab F, Strocov VN, Wang Y, Zhou T, Liu X, Lu F, Liu W, Xie Y, Peng R, Xu H, Feng D. Orientation-dependent electronic structure in interfacial superconductors LaAlO 3/KTaO 3. Nat Commun 2024; 15:7704. [PMID: 39231978 PMCID: PMC11374786 DOI: 10.1038/s41467-024-51969-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 08/21/2024] [Indexed: 09/06/2024] Open
Abstract
Emergent superconductivity at the LaAlO3/KTaO3 interfaces exhibits a mysterious dependence on the KTaO3 crystallographic orientations. Here by soft X-ray angle-resolved photoemission spectroscopy, we directly resolve the electronic structure of the LaAlO3/KTaO3 interfacial superconductors and the non-superconducting counterpart. We find that the mobile electrons that contribute to the interfacial superconductivity show strong k⊥ dispersion. Comparing the superconducting and non-superconducting interfaces, the quasi-three-dimensional electron gas with over 5.5 nm spatial distribution ubiquitously exists and shows similar orbital occupations. The signature of electron-phonon coupling is observed and intriguingly dependent on the interfacial orientations. Remarkably, the stronger electron-phonon coupling signature correlates with the higher superconducting transition temperature. Our observations help scrutinize the theories on the orientation-dependent superconductivity and offer a plausible and straightforward explanation. The interfacial orientation effect that can modify the electron-phonon coupling strength over several nanometers sheds light on the applications of oxide interfaces in general.
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Affiliation(s)
- Xiaoyang Chen
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Tianlun Yu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Yuan Liu
- School of Physics, Zhejiang University, Hangzhou, China
| | - Yanqiu Sun
- School of Physics, Zhejiang University, Hangzhou, China
| | - Minyinan Lei
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Nan Guo
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Yu Fan
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Xingtian Sun
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Meng Zhang
- School of Physics, Zhejiang University, Hangzhou, China
| | - Fatima Alarab
- Swiss Light Source, Paul Scherrer Institute, Villigen, Switzerland
| | | | - Yilin Wang
- School of Future Technology and Department of Physics, University of Science and Technology of China, Hefei, China
| | - Tao Zhou
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Xinyi Liu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Fanjin Lu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Weitao Liu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Yanwu Xie
- School of Physics, Zhejiang University, Hangzhou, China.
| | - Rui Peng
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
| | - Haichao Xu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
| | - Donglai Feng
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, New Cornerstone Science Laboratory, University of Science and Technology of China, Hefei, China.
- School of Emerging Technology and Department of Physics, University of Science and Technology of China, Hefei, China.
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4
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Zhou X, Shen Q, Wang Y, Dai Y, Chen Y, Wu K. Surface and interfacial sciences for future technologies. Natl Sci Rev 2024; 11:nwae272. [PMID: 39280082 PMCID: PMC11394106 DOI: 10.1093/nsr/nwae272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2024] [Revised: 07/15/2024] [Accepted: 08/01/2024] [Indexed: 09/18/2024] Open
Abstract
Physical science has undergone an evolutional transition in research focus from solid bulks to surfaces, culminating in numerous prominent achievements. Currently, it is experiencing a new exploratory phase-interfacial science. Many a technology with a tremendous impact is closely associated with a functional interface which delineates the boundary between disparate materials or phases, evokes complexities that surpass its pristine comprising surfaces, and thereby unveils a plethora of distinctive properties. Such an interface may generate completely new or significantly enhanced properties. These specific properties are closely related to the interfacial states formed at the interfaces. Therefore, establishing a quantitative relationship between the interfacial states and their functionalities has become a key scientific issue in interfacial science. However, interfacial science also faces several challenges such as invisibility in characterization, inaccuracy in calculation, and difficulty in precise construction. To tackle these challenges, people must develop new strategies for precise detection, accurate computation, and meticulous construction of functional interfaces. Such strategies are anticipated to provide a comprehensive toolbox tailored for future interfacial science explorations and thereby lay a solid scientific foundation for several key future technologies.
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Affiliation(s)
- Xiong Zhou
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Qian Shen
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Yongfeng Wang
- School of Electronics, Peking University, Beijing 100871, China
| | - Yafei Dai
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Yongjun Chen
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Kai Wu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
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5
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Liu Y, Meng Q, Mahmoudi P, Wang Z, Zhang J, Yang J, Li W, Wang D, Li Z, Sorrell C, Li S. Advancing Superconductivity with Interface Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405009. [PMID: 39104281 DOI: 10.1002/adma.202405009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 07/01/2024] [Indexed: 08/07/2024]
Abstract
The development of superconducting materials has attracted significant attention not only for their improved performance, such as high transition temperature (TC), but also for the exploration of their underlying physical mechanisms. Recently, considerable efforts have been focused on interfaces of materials, a distinct category capable of inducing superconductivity at non-superconducting material interfaces or augmenting the TC at the interface between a superconducting material and a non-superconducting material. Here, two distinct types of interfaces along with their unique characteristics are reviewed: interfacial superconductivity and interface-enhanced superconductivity, with a focus on the crucial factors and potential mechanisms responsible for enhancing superconducting performance. A series of materials systems is discussed, encompassing both historical developments and recent progress from the perspectives of technical innovations and the exploration of new material classes. The overarching goal is to illuminate pathways toward achieving high TC, expanding the potential of superconducting parameters across interfaces, and propelling superconductivity research toward practical, high-temperature applications.
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Affiliation(s)
- Yichen Liu
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Qingxiao Meng
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Pezhman Mahmoudi
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Ziyi Wang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Ji Zhang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Jack Yang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Wenxian Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Danyang Wang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Zhi Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Chris Sorrell
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Sean Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
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6
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Xu H, Li H, Gauquelin N, Chen X, Wu WF, Zhao Y, Si L, Tian D, Li L, Gan Y, Qi S, Li M, Hu F, Sun J, Jannis D, Yu P, Chen G, Zhong Z, Radovic M, Verbeeck J, Chen Y, Shen B. Giant Tunability of Rashba Splitting at Cation-Exchanged Polar Oxide Interfaces by Selective Orbital Hybridization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313297. [PMID: 38475975 DOI: 10.1002/adma.202313297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 03/07/2024] [Indexed: 03/14/2024]
Abstract
The 2D electron gas (2DEG) at oxide interfaces exhibits extraordinary properties, such as 2D superconductivity and ferromagnetism, coupled to strongly correlated electrons in narrow d-bands. In particular, 2DEGs in KTaO3 (KTO) with 5d t2g orbitals exhibit larger atomic spin-orbit coupling and crystal-facet-dependent superconductivity absent for 3d 2DEGs in SrTiO3 (STO). Herein, by tracing the interfacial chemistry, weak anti-localization magneto-transport behavior, and electronic structures of (001), (110), and (111) KTO 2DEGs, unambiguously cation exchange across KTO interfaces is discovered. Therefore, the origin of the 2DEGs at KTO-based interfaces is dramatically different from the electronic reconstruction observed at STO interfaces. More importantly, as the interface polarization grows with the higher order planes in the KTO case, the Rashba spin splitting becomes maximal for the superconducting (111) interfaces approximately twice that of the (001) interface. The larger Rashba spin splitting couples strongly to the asymmetric chiral texture of the orbital angular moment, and results mainly from the enhanced inter-orbital hopping of the t2g bands and more localized wave functions. This finding has profound implications for the search for topological superconductors, as well as the realization of efficient spin-charge interconversion for low-power spin-orbitronics based on (110) and (111) KTO interfaces.
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Affiliation(s)
- Hao Xu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hang Li
- Photon Science Division, Paul Scherrer Institute, Villigen, 5232, Switzerland
| | - Nicolas Gauquelin
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, 4Groenenborgerlaan 171, Antwerp, 2020, Belgium
| | - Xuejiao Chen
- CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wen-Feng Wu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yuchen Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an, 710127, China
| | - Di Tian
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Yulin Gan
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shaojin Qi
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Minghang Li
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengxia Hu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jirong Sun
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Daen Jannis
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, 4Groenenborgerlaan 171, Antwerp, 2020, Belgium
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Gang Chen
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, 999077, China
| | - Zhicheng Zhong
- CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Milan Radovic
- Photon Science Division, Paul Scherrer Institute, Villigen, 5232, Switzerland
| | - Johan Verbeeck
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, 4Groenenborgerlaan 171, Antwerp, 2020, Belgium
| | - Yunzhong Chen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Baogen Shen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi, 341000, China
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7
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Ning Z, Qian J, Liu Y, Chen F, Zhang M, Deng L, Yuan X, Ge Q, Jin H, Zhang G, Peng W, Qiao S, Mu G, Chen Y, Li W. Coexistence of Ferromagnetism and Superconductivity at KTaO 3 Heterointerfaces. NANO LETTERS 2024; 24:7134-7141. [PMID: 38828962 DOI: 10.1021/acs.nanolett.4c02500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.
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Affiliation(s)
- Zhongfeng Ning
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jiahui Qian
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yixin Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fan Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingzhu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liwei Deng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinli Yuan
- Thermo Fisher Scientific China, Shanghai 201203, China
| | - Qingqin Ge
- Thermo Fisher Scientific China, Shanghai 201203, China
| | - Hua Jin
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanqun Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Qiao
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Gang Mu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
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8
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Maznichenko IV, Ostanin S, Maryenko D, Dugaev VK, Sherman EY, Buczek P, Mertig I, Kawasaki M, Ernst A. Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators. PHYSICAL REVIEW LETTERS 2024; 132:216201. [PMID: 38856292 DOI: 10.1103/physrevlett.132.216201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 04/23/2024] [Indexed: 06/11/2024]
Abstract
Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here, we address the (001), (110), and (111) interfaces between the LaTiO_{3} Mott, and large band gap KTaO_{3} insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wideband insulators. Here, the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO_{3} and LaTiO_{3} which, due to a small gap in the LaTiO_{3} results in its sensitivity to the crystal structure, yields metallization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO_{3}/KTaO_{3} (110) where the "polar" arguments are not applicable and on the emergence of superconductivity in these structures.
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Affiliation(s)
- I V Maznichenko
- Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, Berliner Tor 7, D-20099 Hamburg, Germany
| | - S Ostanin
- Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany
| | - D Maryenko
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - V K Dugaev
- Department of Physics and Medical Engineering, Rzeszów University of Technology, 35-959 Rzeszów, Poland
| | - E Ya Sherman
- Department of Physical Chemistry and the EHU Quantum Center, University of the Basque Country UPV/EHU, Bilbao 48080, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, Spain
| | - P Buczek
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, Berliner Tor 7, D-20099 Hamburg, Germany
| | - I Mertig
- Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany
| | - M Kawasaki
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656, Japan
| | - A Ernst
- Institute for Theoretical Physics, Johannes Kepler University, A-4040 Linz, Austria
- Max Planck Institute for Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
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9
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Kim J, Yu M, Lee JW, Shang SL, Kim GY, Pal P, Seo J, Campbell N, Eom K, Ramachandran R, Rzchowski MS, Oh SH, Choi SY, Liu ZK, Levy J, Eom CB. Electronic-grade epitaxial (111) KTaO 3 heterostructures. SCIENCE ADVANCES 2024; 10:eadk4288. [PMID: 38787951 PMCID: PMC11122674 DOI: 10.1126/sciadv.adk4288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 04/22/2024] [Indexed: 05/26/2024]
Abstract
KTaO3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO3 and KTaO3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO3-based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.
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Affiliation(s)
- Jieun Kim
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Muqing Yu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Jung-Woo Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Pratap Pal
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Jinsol Seo
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
| | - Neil Campbell
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Ranjani Ramachandran
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Mark S. Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Sang Ho Oh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jeremy Levy
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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10
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Ojha SK, Hazra S, Bera S, Gogoi SK, Mandal P, Maity J, Gloskovskii A, Schlueter C, Karmakar S, Jain M, Banerjee S, Gopalan V, Middey S. Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO 3. Nat Commun 2024; 15:3830. [PMID: 38714672 PMCID: PMC11076559 DOI: 10.1038/s41467-024-47956-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Accepted: 04/15/2024] [Indexed: 05/10/2024] Open
Abstract
One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO3. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena-a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO3. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.
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Affiliation(s)
- Shashank Kumar Ojha
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India.
| | - Sankalpa Hazra
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Surajit Bera
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | - Sanat Kumar Gogoi
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
- Department of Physics, Digboi College, Digboi, 786171, India
| | - Prithwijit Mandal
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | - Jyotirmay Maity
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | | | | | - Smarajit Karmakar
- Tata Institute of Fundamental Research, 36/P, Gopanpally Village, Serilingampally Mandal, Ranga Reddy District, Hyderabad, 500107, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India
| | - Sumilan Banerjee
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India.
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Srimanta Middey
- Department of Physics, Indian Institute of Science, Bengaluru, 560012, India.
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11
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Zhang X, Zhu T, Zhang S, Chen Z, Song A, Zhang C, Gao R, Niu W, Chen Y, Fei F, Tai Y, Li G, Ge B, Lou W, Shen J, Zhang H, Chang K, Song F, Zhang R, Wang X. Light-induced giant enhancement of nonreciprocal transport at KTaO 3-based interfaces. Nat Commun 2024; 15:2992. [PMID: 38582768 PMCID: PMC10998845 DOI: 10.1038/s41467-024-47231-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Accepted: 03/25/2024] [Indexed: 04/08/2024] Open
Abstract
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1 T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.
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Affiliation(s)
- Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Tongshuai Zhu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
- College of Science, China University of Petroleum (East China), Qingdao, 266580, China
| | - Shuai Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Anke Song
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Rongzheng Gao
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Fucong Fei
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Yilin Tai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Guoan Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Wenkai Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Kai Chang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
- Department of Physics, Xiamen University, Xiamen, 361005, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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12
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Han X, Zhan J, Zhang FC, Hu J, Wu X. Robust topological superconductivity in spin-orbit coupled systems at higher-order van Hove filling. Sci Bull (Beijing) 2024; 69:319-324. [PMID: 38105164 DOI: 10.1016/j.scib.2023.12.005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Revised: 10/19/2023] [Accepted: 11/22/2023] [Indexed: 12/19/2023]
Abstract
Van Hove singularities in proximity to the Fermi level promote electronic interactions and generate diverse competing instabilities. It is also known that a nontrivial Berry phase derived from spin-orbit coupling can introduce an intriguing decoration into the interactions and thus alter correlated phenomena. However, it is unclear how and what type of new physics can emerge in a system featured by the interplay between van Hove singularities (VHSs) and the Berry phase. Here, based on a general Rashba model on the square lattice, we comprehensively explore such an interplay and its significant influence on the competing electronic instabilities by performing a parquet renormalization group analysis. Despite the existence of a variety of comparable fluctuations in the particle-particle and particle-hole channels associated with higher-order VHSs, we find that the chiral p±ip pairings emerge as two stable fixed trajectories within the generic interaction parameter space, namely the system becomes a robust topological superconductor. The chiral pairings stem from the hopping interaction induced by the nontrivial Berry phase. The possible experimental realization and implications are discussed. Our work sheds new light on the correlated states in quantum materials with strong spin-orbit coupling (SOC) and offers fresh insights into the exploration of topological superconductivity.
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Affiliation(s)
- Xinloong Han
- Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Jun Zhan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Fu-Chun Zhang
- Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jiangping Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Xianxin Wu
- CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China.
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13
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Zhai J, Trama M, Liu H, Zhu Z, Zhu Y, Perroni CA, Citro R, He P, Shen J. Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO 3 Based Two-Dimensional Electron Gas. NANO LETTERS 2023; 23:11892-11898. [PMID: 38079285 DOI: 10.1021/acs.nanolett.3c03948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.
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Affiliation(s)
- Jinfeng Zhai
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Mattia Trama
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | - Hao Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhifei Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Carmine Antonio Perroni
- Physics Department "Ettore Pancini", Universitá Degli Studi di Napoli "Federico II", Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- CNR-SPIN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- INFN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
| | - Roberta Citro
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
| | - Pan He
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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14
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Feng Y, Zhang J, Cao W, Zhang J, Shreeve JM. A promising perovskite primary explosive. Nat Commun 2023; 14:7765. [PMID: 38012175 PMCID: PMC10681991 DOI: 10.1038/s41467-023-43320-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 11/07/2023] [Indexed: 11/29/2023] Open
Abstract
A primary explosive is an ideal chemical substance for performing ignition in military and commercial applications. For over 150 years, nearly all of the developed primary explosives have suffered from various issues, such as troublesome syntheses, high toxicity, poor stability or/and weak ignition performance. Now we report an interesting example of a primary explosive with double perovskite framework, {(C6H14N2)2[Na(NH4)(IO4)6]}n (DPPE-1), which was synthesized using a simple green one-pot method in an aqueous solution at room temperature. DPPE-1 is free of heavy metals, toxic organic components, and doesn't involve any explosive precursors. It exhibits good stability towards air, moisture, sunlight, and heat and has acceptable mechanical sensitivities. It affords ignition performance on par with the most powerful primary explosives reported to date. DPPE-1 promises to meet the challenges existing with current primary explosives, and this work could trigger more extensive applications of perovskite.
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Affiliation(s)
- Yongan Feng
- School of Environment and Safety Engineering, North University of China, 030051, Taiyuan, China.
| | - Jichuan Zhang
- Department of Chemistry, University of Idaho, Moscow, ID, 83844-2343, USA
| | - Weiguo Cao
- School of Environment and Safety Engineering, North University of China, 030051, Taiyuan, China
| | - Jiaheng Zhang
- Sauvage Laboratory for Smart Materials, Harbin Institute of Technology, 518055, Shenzhen, China.
| | - Jean'ne M Shreeve
- Department of Chemistry, University of Idaho, Moscow, ID, 83844-2343, USA.
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15
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Shen JY, Shi CY, Pan ZM, Ju LL, Dong MD, Chen GF, Zhang YC, Yuan JK, Wu CJ, Xie YW, Wu J. Reentrance of interface superconductivity in a high-T c cuprate heterostructure. Nat Commun 2023; 14:7290. [PMID: 37949854 PMCID: PMC10638369 DOI: 10.1038/s41467-023-42903-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Accepted: 10/25/2023] [Indexed: 11/12/2023] Open
Abstract
Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La2-xSrxCuO4 (0.45 ≤ x ≤ 1.0) and discover an unprecedented reentrance of interface superconductivity in La2-xSrxCuO4 /La2CuO4 heterostructures. As x increases, the superconductivity is weakened and completely fades away at x = 0.8; but it revives at higher doping and fully recovers at x = 1.0. This is shown to be correlated with the suppression of the interfacial charge transfer around x = 0.8 and the weak-to-strong localization crossover in the La2-xSrxCuO4 layer. We further construct a theoretical model to account for the sophisticated relation between charge localization and interfacial charge transfer. Our work advances both the search for and control of new superconducting heterostructures.
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Affiliation(s)
- J Y Shen
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - C Y Shi
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Z M Pan
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
| | - L L Ju
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - M D Dong
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - G F Chen
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - Y C Zhang
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - J K Yuan
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
| | - C J Wu
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
- New Cornerstone Science Laboratory, Department of Physics, School of Science, Westlake University, 310024, Hangzhou, China
- Institute for Theoretical Sciences, Westlake University, Hangzhou, 310024, Zhejiang, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, Zhejiang, China
| | - Y W Xie
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - J Wu
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China.
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China.
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China.
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16
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Li L, Fang X, Zhang Z, Yang Q, Wang F, Li M, Zhu R, Wang L, Zhu Y, Miao X, Lu Y, Shi J, Wu Y, Liu G, Fang Y, Tian H, Ren Z, Yang D, Han G. Lattice-Gradient Perovskite KTaO 3 Films for an Ultrastable and Low-Dose X-Ray Detector. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211026. [PMID: 37796177 DOI: 10.1002/adma.202211026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Revised: 09/25/2023] [Indexed: 10/06/2023]
Abstract
Conventional indirect X-ray detectors employ scintillating phosphors to convert X-ray photons into photodiode-detectable visible photons, leading to low conversion efficiencies, low spatial resolutions, and optical crosstalk. Consequently, X-ray detectors that directly convert photons into electric signals have long been desired for high-performance medical imaging and industrial inspection. Although emerging hybrid inorganic-organic halide perovskites, such as CH3 NH3 PbI3 and CH3 NH3 PbBr3 , exhibit high sensitivity, they have salient drawbacks including structural instability, ion motion, and the use of toxic Pb. Here, this work reports an ultrastable, low-dose X-ray detector comprising KTaO3 perovskite films epitaxially grown on a Nb-doped strontium titanate substrate using a low-cost solution method. The detector exhibits a stable photocurrent under high-dose irradiation, high-temperature (200 °C), and aqueous conditions. Moreover, the prototype KTaO3 -film-based detector exhibits a 150-fold higher sensitivity (3150 µC Gyair -1 cm-2 ) and 150-fold lower detection limit (<40 nGyair s-1 ) than those of commercial α-Se-based direct detectors. Systematic investigations reveal that the high stability of the detector originates from the strong covalent bonds within the KTaO3 film, whereas the low detection limit is due to a lattice-gradient-driven built-in electric field and the high insulating property of KTaO3 film. This study unveils a new path toward the fabrication of green, stable, and low-dose X-ray detectors using oxide perovskite films, which have significant application potential in medical imaging and security operations.
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Affiliation(s)
- Liqi Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xuchao Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zijun Zhang
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Qian Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Fei Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Menglu Li
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Ruixue Zhu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Lixiang Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yihan Zhu
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry, Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China
| | - Xiaohe Miao
- Instrumentation and Service Center for Physical Sciences, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yangfan Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Junhui Shi
- Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China
| | - Yongjun Wu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Gang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - He Tian
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhaohui Ren
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030024, China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Gaorong Han
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
- Ningbo Campus, Zhejiang University, Zhejiang, 315100, China
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17
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Kumar Nayak A, Steinbok A, Roet Y, Koo J, Feldman I, Almoalem A, Kanigel A, Yan B, Rosch A, Avraham N, Beidenkopf H. First-order quantum phase transition in the hybrid metal-Mott insulator transition metal dichalcogenide 4Hb-TaS 2. Proc Natl Acad Sci U S A 2023; 120:e2304274120. [PMID: 37856542 PMCID: PMC10614784 DOI: 10.1073/pnas.2304274120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 08/19/2023] [Indexed: 10/21/2023] Open
Abstract
Coupling together distinct correlated and topologically nontrivial electronic phases of matter can potentially induce novel electronic orders and phase transitions among them. Transition metal dichalcogenide compounds serve as a bedrock for exploration of such hybrid systems. They host a variety of exotic electronic phases, and their Van der Waals nature enables to admix them, either by exfoliation and stacking or by stoichiometric growth, and thereby induce novel correlated complexes. Here, we investigate the compound 4Hb-TaS2 that interleaves the Mott-insulating state of 1T-TaS2 and the putative spin liquid it hosts together with the metallic state of 2H-TaS2 and the low-temperature superconducting phase it harbors using scanning tunneling spectroscopy. We reveal a thermodynamic phase diagram that hosts a first-order quantum phase transition between a correlated Kondo-like cluster state and a depleted flat band state. We demonstrate that this intrinsic transition can be induced by an electric field and temperature as well as by manipulation of the interlayer coupling with the probe tip, hence allowing to reversibly toggle between the Kondo-like cluster and the depleted flat band states. The phase transition is manifested by a discontinuous change of the complete electronic spectrum accompanied by hysteresis and low-frequency noise. We find that the shape of the transition line in the phase diagram is determined by the local compressibility and the entropy of the two electronic states. Our findings set such heterogeneous structures as an exciting platform for systematic investigation and manipulation of Mott-metal transitions and strongly correlated phases and quantum phase transitions therein.
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Affiliation(s)
- Abhay Kumar Nayak
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Aviram Steinbok
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Yotam Roet
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Jahyun Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Irena Feldman
- Department of Physics, Technion - Israel Institute of Technology, Haifa32000, Israel
| | - Avior Almoalem
- Department of Physics, Technion - Israel Institute of Technology, Haifa32000, Israel
| | - Amit Kanigel
- Department of Physics, Technion - Israel Institute of Technology, Haifa32000, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Achim Rosch
- Institute for Theoretical Physics, University of Cologne, Zülpicher Str. 77, Köln50937, Germany
| | - Nurit Avraham
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Haim Beidenkopf
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
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18
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Esswein T, Spaldin NA. First-principles calculation of electron-phonon coupling in doped KTaO3. OPEN RESEARCH EUROPE 2023; 3:177. [PMID: 38115952 PMCID: PMC10728587 DOI: 10.12688/openreseurope.16312.1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Accepted: 09/04/2023] [Indexed: 12/21/2023]
Abstract
Background: Motivated by the recent experimental discovery of strongly surface-plane-dependent superconductivity at surfaces of KTaO 3 single crystals, we calculate the electron-phonon coupling strength, λ, of doped KTaO 3 along the reciprocal-space high-symmetry directions. Methods:Using the Wannier-function approach implemented in the EPW package, we calculate λ across the experimentally covered doping range and compare its mode-resolved distribution along the [001], [110] and [111] reciprocal-space directions. Results: We find that the electron-phonon coupling is strongest in the optical modes around the Γ point, with some distribution to higher k values in the [001] direction. The electron-phonon coupling strength as a function of doping has a dome-like shape in all three directions and its integrated total is largest in the [001] direction and smallest in the [111] direction, in contrast to the experimentally measured trends in critical temperatures. Conclusions: This disagreement points to a non-BCS character of the superconductivity. Instead, the strong localization of λ in the soft optical modes around Γ suggests an importance of ferroelectric soft-mode fluctuations, which is supported by our findings that the mode-resolved λ values are strongly enhanced in polar structures. The inclusion of spin-orbit coupling has negligible influence on our calculated mode-resolved λ values.
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Affiliation(s)
- Tobias Esswein
- Department of Materials, ETH Zurich, Zürich, Zurich, 8093, Switzerland
| | - Nicola A. Spaldin
- Department of Materials, ETH Zurich, Zürich, Zurich, 8093, Switzerland
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19
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Ao L, Huang J, Qin F, Li Z, Ideue T, Akhtari K, Chen P, Bi X, Qiu C, Huang D, Chen L, Belosludov RV, Gou H, Ren W, Nojima T, Iwasa Y, Bahramy MS, Yuan H. Valley-dimensionality locking of superconductivity in cubic phosphides. SCIENCE ADVANCES 2023; 9:eadf6758. [PMID: 37683003 PMCID: PMC10491139 DOI: 10.1126/sciadv.adf6758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 08/08/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional superconductivity is primarily realized in atomically thin layers through extreme exfoliation, epitaxial growth, or interfacial gating. Apart from their technical challenges, these approaches lack sufficient control over the Fermiology of superconducting systems. Here, we offer a Fermiology-engineering approach, allowing us to desirably tune the coherence length of Cooper pairs and the dimensionality of superconducting states in arsenic phosphides AsxP1-x under hydrostatic pressure. We demonstrate how this turns these compounds into tunable two-dimensional superconductors with a dome-shaped phase diagram even in the bulk limit. This peculiar behavior is shown to result from an unconventional valley-dimensionality locking mechanism, driven by a delicate competition between three-dimensional hole-type and two-dimensional electron-type energy pockets spatially separated in momentum space. The resulting dimensionality crossover is further discussed to be systematically controllable by pressure and stoichiometry tuning. Our findings pave a unique way to realize and control superconducting phases with special pairing and dimensional orders.
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Affiliation(s)
- Lingyi Ao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Toshiya Ideue
- Quantum-Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan
| | - Keivan Akhtari
- Department of Physics, University of Kurdistan, Sanandaj 416, Iran
| | - Peng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Dajian Huang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | | | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Tsutomu Nojima
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Wako, Saitama 351-0198, Japan
| | - Mohammad Saeed Bahramy
- Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
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20
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Al-Tawhid AH, Poage SJ, Salmani-Rezaie S, Gonzalez A, Chikara S, Muller DA, Kumah DP, Gastiasoro MN, Lorenzana J, Ahadi K. Enhanced Critical Field of Superconductivity at an Oxide Interface. NANO LETTERS 2023; 23:6944-6950. [PMID: 37498750 DOI: 10.1021/acs.nanolett.3c01571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/29/2023]
Abstract
The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remain a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching ∼25 T in optimally doped heterostructures. The superconducting order parameter is highly sensitive to the carrier density. We argue that spin-orbit coupling drives the formation of anomalous quasiparticles with vanishing magnetic moment, providing significant condensate immunity against magnetic fields beyond the Pauli paramagnetic limit. These results offer design opportunities for superconductors with extreme resilience against the applied magnetic fields.
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Affiliation(s)
- Athby H Al-Tawhid
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
| | - Samuel J Poage
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
| | - Salva Salmani-Rezaie
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States
| | - Antonio Gonzalez
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
| | - Shalinee Chikara
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States
| | - Divine P Kumah
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Maria N Gastiasoro
- Donostia International Physics Center, 20018 Donostia-San Sebastian, Spain
| | - José Lorenzana
- ISC-CNR and Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
| | - Kaveh Ahadi
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
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21
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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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22
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Zhang G, Wang L, Wang J, Li G, Huang G, Yang G, Xue H, Ning Z, Wu Y, Xu JP, Song Y, An Z, Zheng C, Shen J, Li J, Chen Y, Li W. Spontaneous rotational symmetry breaking in KTaO 3 heterointerface superconductors. Nat Commun 2023; 14:3046. [PMID: 37236987 DOI: 10.1038/s41467-023-38759-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 05/11/2023] [Indexed: 05/28/2023] Open
Abstract
Broken symmetries play a fundamental role in superconductivity and influence many of its properties in a profound way. Understanding these symmetry breaking states is essential to elucidate the various exotic quantum behaviors in non-trivial superconductors. Here, we report an experimental observation of spontaneous rotational symmetry breaking of superconductivity at the heterointerface of amorphous (a)-YAlO3/KTaO3(111) with a superconducting transition temperature of 1.86 K. Both the magnetoresistance and superconducting critical field in an in-plane field manifest striking twofold symmetric oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the mixed-parity superconducting state, which is an admixture of s-wave and p-wave pairing components induced by strong spin-orbit coupling inherent to inversion symmetry breaking at the heterointerface of a-YAlO3/KTaO3. Our work suggests an unconventional nature of the underlying pairing interaction in the KTaO3 heterointerface superconductors, and brings a new broad of perspective on understanding non-trivial superconducting properties at the artificial heterointerfaces.
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Affiliation(s)
- Guanqun Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Lijie Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jinghui Wang
- ShanghaiTech Laboratory for Topological Physics & School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Guoan Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guangyi Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Guang Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Huanyi Xue
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Zhongfeng Ning
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yueshen Wu
- ShanghaiTech Laboratory for Topological Physics & School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Jin-Peng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanru Song
- ShanghaiTech Quantum Device Lab, ShanghaiTech University, Shanghai, 201210, China.
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, China.
| | - Jun Li
- ShanghaiTech Laboratory for Topological Physics & School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
| | - Yan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
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23
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Yan X, Jiang Y, Jin Q, Yao T, Wang W, Tao A, Gao C, Li X, Chen C, Ye H, Ma XL. Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface. Nat Commun 2023; 14:2788. [PMID: 37188706 DOI: 10.1038/s41467-023-38548-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Accepted: 05/08/2023] [Indexed: 05/17/2023] Open
Abstract
Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al2O3 (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.
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Affiliation(s)
- Xuexi Yan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yixiao Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Qianqian Jin
- Center for the Structure of Advanced Matter, School of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Tingting Yao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Weizhen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Ang Tao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Chunyang Gao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Xiang Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Chunlin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China.
- Ji Hua Laboratory, Foshan, 528200, China.
| | | | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, China.
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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24
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Gan Y, Yang F, Kong L, Chen X, Xu H, Zhao J, Li G, Zhao Y, Yan L, Zhong Z, Chen Y, Ding H. Light-Induced Giant Rashba Spin-Orbit Coupling at Superconducting KTaO 3 (110) Heterointerfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2300582. [PMID: 36972144 DOI: 10.1002/adma.202300582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 03/07/2023] [Indexed: 05/16/2023]
Abstract
The 2D electron system (2DES) at the KTaO3 surface or heterointerface with 5d orbitals hosts extraordinary physical properties, including a stronger Rashba spin-orbit coupling (RSOC), higher superconducting transition temperature, and potential of topological superconductivity. Herein, a huge enhancement of RSOC under light illumination achieved at a superconducting amorphous-Hf0.5 Zr0.5 O2 /KTaO3 (110) heterointerfaces is reported. The superconducting transition is observed with Tc = 0.62 K and the temperature-dependent upper critical field reveals the interaction between spin-orbit scattering and superconductivity. A strong RSOC with Bso = 1.9 T is revealed by weak antilocalization in the normal state, which undergoes sevenfold enhancement under light illumination. Furthermore, RSOC strength develops a dome-shaped dependence of carrier density with the maximum of Bso = 12.6 T achieved near the Lifshitz transition point nc ≈ 4.1 × 1013 cm-2 . The highly tunable giant RSOC at KTaO3 (110)-based superconducting interfaces show great potential for spintronics.
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Affiliation(s)
- Yulin Gan
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fazhi Yang
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lingyuan Kong
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuejiao Chen
- Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hao Xu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jin Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Gang Li
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuchen Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lei Yan
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Yunzhong Chen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hong Ding
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Tsung-Dao Lee Institute & School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, China
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25
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Tunable superconductivity and its origin at KTaO 3 interfaces. Nat Commun 2023; 14:951. [PMID: 36806127 PMCID: PMC9941122 DOI: 10.1038/s41467-023-36309-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 01/23/2023] [Indexed: 02/22/2023] Open
Abstract
What causes Cooper pairs to form in unconventional superconductors is often elusive because experimental signatures that connect to a specific pairing mechanism are rare. Here, we observe distinct dependences of the superconducting transition temperature Tc on carrier density n2D for electron gases formed at KTaO3 (111), (001) and (110) interfaces. For the (111) interface, a remarkable linear dependence of Tc on n2D is observed over a range of nearly one order of magnitude. Further, our study of the dependence of superconductivity on gate electric fields reveals the role of the interface in mediating superconductivity. We find that the extreme sensitivity of superconductivity to crystallographic orientation can be explained by pairing via inter-orbital interactions induced by an inversion-breaking transverse optical phonon and quantum confinement. This mechanism is also consistent with the dependence of Tc on n2D. Our study may shed light on the pairing mechanism in other superconducting quantum paraelectrics.
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26
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Arnault EG, Al-Tawhid AH, Salmani-Rezaie S, Muller DA, Kumah DP, Bahramy MS, Finkelstein G, Ahadi K. Anisotropic superconductivity at KTaO 3(111) interfaces. SCIENCE ADVANCES 2023; 9:eadf1414. [PMID: 36791191 PMCID: PMC9931206 DOI: 10.1126/sciadv.adf1414] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/01/2022] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
A two-dimensional, anisotropic superconductivity was recently found at the KTaO3(111) interfaces. The nature of the anisotropic superconducting transition remains a subject of debate. To investigate the origins of the observed behavior, we grew epitaxial KTaO3(111)-based heterostructures. We show that the superconductivity is robust against the in-plane magnetic field and violates the Pauli limit. We also show that the Cooper pairs are more resilient when the bias is along [11[Formula: see text]] (I ∥ [11[Formula: see text]]) and the magnetic field is along [1[Formula: see text]0] (B ∥ [1[Formula: see text]0]). We discuss the anisotropic nature of superconductivity in the context of electronic structure, orbital character, and spin texture at the KTaO3(111) interfaces. The results point to future opportunities to enhance superconducting transition temperatures and critical fields in crystalline, two-dimensional superconductors with strong spin-orbit coupling.
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Affiliation(s)
| | - Athby H. Al-Tawhid
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27265, USA
| | - Salva Salmani-Rezaie
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
| | - David A. Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
| | - Divine P. Kumah
- Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
| | - Mohammad S. Bahramy
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | | | - Kaveh Ahadi
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27265, USA
- Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
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27
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Kats VN, Shelukhin LA, Usachev PA, Averyanov DV, Karateev IA, Parfenov OE, Taldenkov AN, Tokmachev AM, Storchak VG, Pavlov VV. Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films. NANOSCALE 2023; 15:2828-2836. [PMID: 36688382 DOI: 10.1039/d2nr04872h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Light-induced magnetization response unfolding on a temporal scale down to femtoseconds presents a way to convey information via spin manipulation. The advancement of the field requires exploration of new materials implementing various mechanisms for ultrafast magnetization dynamics. Here, pump-probe measurements of EuO-based ferromagnets by a time-resolved two-colour stroboscopic technique are reported. Epitaxial films of the pristine semiconductor and metallic Gd-doped EuO demonstrate photo-induced magnetization precession. Comparative experimental studies of both systems are carried out varying temperature, magnetic field, and polarization light helicity of the pump beam, followed by numerical estimates. The study establishes optical spin orientation by the electronic transition 4f75d0 → 4f65d1 as a mechanism triggering collective magnetization precession in these materials. The results suggest applications of EuO-based systems in optoelectronics and spintronics.
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Affiliation(s)
| | | | | | - Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
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28
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Heveling J. La-Doped Alumina, Lanthanum Aluminate, Lanthanum Hexaaluminate, and Related Compounds: A Review Covering Synthesis, Structure, and Practical Importance. Ind Eng Chem Res 2023. [DOI: 10.1021/acs.iecr.2c03007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Affiliation(s)
- Josef Heveling
- Department of Chemistry, Tshwane University of Technology, Pretoria 0001, South Africa
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29
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Wang L, He W, Huang G, Xue H, Zhang G, Mu G, Wu S, An Z, Zheng C, Chen Y, Li W. Two-Dimensional Superconductivity at the Titanium Sesquioxide Heterointerface. ACS NANO 2022; 16:16150-16157. [PMID: 36121352 DOI: 10.1021/acsnano.2c04795] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The study of exotic superconductivity in two dimensions has been a central theme in the solid state and materials research communities. Experimentally exploring and identifying exotic, fascinating interface superconductors with a high transition temperature (Tc) are challenging. Here, we report an experimental observation of intriguing two-dimensional superconductivity with a Tc of up to 3.8 K at the interface between a Mott insulator Ti2O3 and polar semiconductor GaN. At the verge of superconductivity, we also observe a striking quantum metallic-like state, demonstrating that it is a precursor to the two-dimensional superconductivity as the temperature is decreased. Our work shows an exciting opportunity to exploit the underlying, emergent quantum phenomena at the heterointerfaces via heterostructure engineering.
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Affiliation(s)
- Lijie Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wenhao He
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guangyi Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Huanyi Xue
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guanqun Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Shiwei Wu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
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30
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Fan Z, Liao F, Ji Y, Liu Y, Huang H, Wang D, Yin K, Yang H, Ma M, Zhu W, Wang M, Kang Z, Li Y, Shao M, Hu Z, Shao Q. Coupling of nanocrystal hexagonal array and two-dimensional metastable substrate boosts H 2-production. Nat Commun 2022; 13:5828. [PMID: 36192414 PMCID: PMC9530234 DOI: 10.1038/s41467-022-33512-5] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2022] [Accepted: 09/21/2022] [Indexed: 11/09/2022] Open
Abstract
Designing well-ordered nanocrystal arrays with subnanometre distances can provide promising materials for future nanoscale applications. However, the fabrication of aligned arrays with controllable accuracy in the subnanometre range with conventional lithography, template or self-assembly strategies faces many challenges. Here, we report a two-dimensional layered metastable oxide, trigonal phase rhodium oxide (space group, P-3m1 (164)), which provides a platform from which to construct well-ordered face-centred cubic rhodium nanocrystal arrays in a hexagonal pattern with an intersurface distance of only 0.5 nm. The coupling of the well-ordered rhodium array and metastable substrate in this catalyst triggers and improves hydrogen spillover, enhancing the acidic hydrogen evolution for H2 production, which is essential for various clean energy-related devices. The catalyst achieves a low overpotential of only 9.8 mV at a current density of -10 mA cm-2, a low Tafel slope of 24.0 mV dec-1, and high stability under a high potential (vs. RHE) of -0.4 V (current density of ~750 mA cm-2). This work highlights the important role of metastable materials in the design of advanced materials to achieve high-performance catalysis.
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Affiliation(s)
- Zhenglong Fan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Fan Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Yujin Ji
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Yang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China.
| | - Hui Huang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Dan Wang
- College of Energy, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Kui Yin
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Haiwei Yang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Mengjie Ma
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Wenxiang Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Meng Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Zhenhui Kang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China.
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, 999078, Macau SAR, China.
| | - Youyong Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China
| | - Mingwang Shao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, Jiangsu, China.
| | - Zhiwei Hu
- Max Planck Institute for Chemical Physics of Solids, Nothnitzer Strasse 40, Dresden, 01187, Germany.
| | - Qi Shao
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, Jiangsu, China.
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31
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Sun Y, Liu Y, Pan W, Xie Y. Effects of growth temperature, oxygen pressure, laser fluence and postannealing on transport properties of superconducting LaAlO 3/KTaO 3(111) interfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:444004. [PMID: 36007513 DOI: 10.1088/1361-648x/ac8cc8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Accepted: 08/25/2022] [Indexed: 06/15/2023]
Abstract
The recent discovery of superconductivity at EuO (or LaAlO3)/KTaO3interfaces has attracted considerable research interest. However, an extensive study on growth of these interfaces is still lacking. In this work, we have fabricated LaAlO3/KTaO3(111) interfaces by growing LaAlO3thin films on KTaO3(111) single-crystalline substrates by pulsed laser deposition. We investigated the effects of growth temperature, oxygen pressure, laser fluence, and postannealing on transport properties. We found that all these key growth parameters show important effects on transport properties, and discussed their possible mechanisms. Our present study provides useful knowledge to further optimize these interfaces.
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Affiliation(s)
- Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Wenze Pan
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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32
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Zheng D, Zhang J, He X, Wen Y, Li P, Wang Y, Ma Y, Bai H, Alshareef HN, Zhang XX. Electrically and optically erasable non-volatile two-dimensional electron gas memory. NANOSCALE 2022; 14:12339-12346. [PMID: 35971909 DOI: 10.1039/d2nr01582j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.
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Affiliation(s)
- Dongxing Zheng
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Junwei Zhang
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, PR China
| | - Xin He
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Yan Wen
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Peng Li
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yuchen Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Yinchang Ma
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Husam N Alshareef
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Xi-Xiang Zhang
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
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33
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Yu M, Liu C, Yang D, Yan X, Du Q, Fong DD, Bhattacharya A, Irvin P, Levy J. Nanoscale Control of the Metal-Insulator Transition at LaAlO 3/KTaO 3 Interfaces. NANO LETTERS 2022; 22:6062-6068. [PMID: 35862274 DOI: 10.1021/acs.nanolett.2c00673] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here, we report the reconfigurable creation of conducting structures at intrinsically insulating LaAlO3/KTO(110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultralow-voltage electron-beam lithography. At low temperatures, KTO(110)-based devices show superconductivity that is tunable by an applied back gate. A one-dimensional nanowire device shows single-electron-transistor (SET) behavior. A KTO(111)-based device is metallic but does not become superconducting. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.
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Affiliation(s)
- Muqing Yu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
| | - Changjiang Liu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Dengyu Yang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
| | - Xi Yan
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Qianheng Du
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Dillon D Fong
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Anand Bhattacharya
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Patrick Irvin
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
| | - Jeremy Levy
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
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34
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Mallik S, Ménard GC, Saïz G, Witt H, Lesueur J, Gloter A, Benfatto L, Bibes M, Bergeal N. Superfluid stiffness of a KTaO 3-based two-dimensional electron gas. Nat Commun 2022; 13:4625. [PMID: 35941153 PMCID: PMC9360446 DOI: 10.1038/s41467-022-32242-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Accepted: 07/21/2022] [Indexed: 11/09/2022] Open
Abstract
After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3system, the recent discovery of a superconducting two-dimensional electron gas (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the field of oxides interface. However, while both interfaces share common properties, experiments also suggest important differences between the two systems. Here, we report gate tunable superconductivity in 2-DEGs generated at the surface of a (111)-oriented KTaO3 crystal by the simple sputtering of a thin Al layer. We extract the superfluid stiffness of the 2-DEGs and show that its temperature dependence is consistent with a node-less superconducting order parameter having a gap value larger than expected within a simple BCS weak-coupling limit model. The superconducting transition follows the Berezinskii-Kosterlitz-Thouless scenario, which was not reported on SrTiO3-based interfaces. Our finding offers innovative perspectives for fundamental science but also for device applications in a variety of fields such as spin-orbitronics and topological electronics.
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Affiliation(s)
- S Mallik
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France
| | - G C Ménard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - G Saïz
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - H Witt
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France.,Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - J Lesueur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - A Gloter
- Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS UMR 8502, 91405, Orsay, France
| | - L Benfatto
- Department of Physics and ISC-CNR, Sapienza University of Rome, Rome, Italy
| | - M Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France
| | - N Bergeal
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France.
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35
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Volkov PA, Chandra P, Coleman P. Superconductivity from energy fluctuations in dilute quantum critical polar metals. Nat Commun 2022; 13:4599. [PMID: 35933482 PMCID: PMC9357083 DOI: 10.1038/s41467-022-32303-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2021] [Accepted: 07/25/2022] [Indexed: 11/09/2022] Open
Abstract
Superconductivity in low carrier density metals challenges the conventional electron-phonon theory due to the absence of retardation required to overcome Coulomb repulsion. Here we demonstrate that pairing mediated by energy fluctuations, ubiquitously present close to continuous phase transitions, occurs in dilute quantum critical polar metals and results in a dome-like dependence of the superconducting Tc on carrier density, characteristic of non-BCS superconductors. In quantum critical polar metals, the Coulomb repulsion is heavily screened, while the critical transverse optical phonons decouple from the electron charge. In the resulting vacuum, long-range attractive interactions emerge from the energy fluctuations of the critical phonons, resembling the gravitational interactions of a chargeless dark matter universe. Our estimates show that this mechanism may explain the critical temperatures observed in doped SrTiO3. We provide predictions for the enhancement of superconductivity near polar quantum criticality in two- and three-dimensional materials that can be used to test our theory.
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Affiliation(s)
- Pavel A Volkov
- Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA.
| | - Premala Chandra
- Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA
| | - Piers Coleman
- Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA.,Department of Physics, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK
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36
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McCluskey CJ, Colbear MG, McConville JPV, McCartan SJ, Maguire JR, Conroy M, Moore K, Harvey A, Trier F, Bangert U, Gruverman A, Bibes M, Kumar A, McQuaid RGP, Gregg JM. Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204298. [PMID: 35733393 DOI: 10.1002/adma.202204298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Revised: 06/13/2022] [Indexed: 06/15/2023]
Abstract
Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180° charged domain walls, in partially switched ferroelectric thin-film single-crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 1013 ) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm2 V-1 s-1 . This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.
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Affiliation(s)
- Conor J McCluskey
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Matthew G Colbear
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - James P V McConville
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Shane J McCartan
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Jesi R Maguire
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Michele Conroy
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Kalani Moore
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Alan Harvey
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Felix Trier
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Ursel Bangert
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | - Manuel Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Amit Kumar
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Raymond G P McQuaid
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - J Marty Gregg
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
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37
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Reticcioli M, Wang Z, Schmid M, Wrana D, Boatner LA, Diebold U, Setvin M, Franchini C. Competing electronic states emerging on polar surfaces. Nat Commun 2022; 13:4311. [PMID: 35879300 PMCID: PMC9314351 DOI: 10.1038/s41467-022-31953-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2021] [Accepted: 07/07/2022] [Indexed: 11/28/2022] Open
Abstract
Excess charge on polar surfaces of ionic compounds is commonly described by the two-dimensional electron gas (2DEG) model, a homogeneous distribution of charge, spatially-confined in a few atomic layers. Here, by combining scanning probe microscopy with density functional theory calculations, we show that excess charge on the polar TaO2 termination of KTaO3(001) forms more complex electronic states with different degrees of spatial and electronic localization: charge density waves (CDW) coexist with strongly-localized electron polarons and bipolarons. These surface electronic reconstructions, originating from the combined action of electron-lattice interaction and electronic correlation, are energetically more favorable than the 2DEG solution. They exhibit distinct spectroscopy signals and impact on the surface properties, as manifested by a local suppression of ferroelectric distortions.
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Affiliation(s)
- Michele Reticcioli
- University of Vienna, Faculty of Physics, Center for Computational Materials Science, Vienna, Austria
- Institute of Applied Physics, Technische Universität Wien, Vienna, Austria
| | - Zhichang Wang
- Institute of Applied Physics, Technische Universität Wien, Vienna, Austria
- State Key Laboratory for Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, and Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Michael Schmid
- Institute of Applied Physics, Technische Universität Wien, Vienna, Austria
| | - Dominik Wrana
- Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, 180 00, Prague 8, Czech Republic
| | - Lynn A Boatner
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Ulrike Diebold
- Institute of Applied Physics, Technische Universität Wien, Vienna, Austria
| | - Martin Setvin
- Institute of Applied Physics, Technische Universität Wien, Vienna, Austria.
- Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, 180 00, Prague 8, Czech Republic.
| | - Cesare Franchini
- University of Vienna, Faculty of Physics, Center for Computational Materials Science, Vienna, Austria.
- Dipartimento di Fisica e Astronomia, Università di Bologna, 40127, Bologna, Italy.
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38
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Yin H, Yang R, Wang S, Jin K. Manipulation of 2DEG at double-doped high-entropy heterointerfaces. NANOSCALE 2022; 14:9771-9780. [PMID: 35766803 DOI: 10.1039/d2nr01884e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Chemical doping is a dominating method for manipulating oxide two-dimensional electron gas (2DEG). However, enhancing the doping level while maintaining the metallic conduction remains a challenge, which limits detailed knowledge of 2DEG manipulation. Herein, we propose a concept of high-entropy heterointerface, which consists of a complex oxide (containing at least 5 elements) at either or both sides of the interface. By doubly doping Sr and Mn elements in the Nd and Al sites of NdAlO3, we grow Nd1-xSrxAl1-xMnxO3 (NSAMO) films onto SrTiO3 (STO) substrates to fabricate NSAMO/STO high-entropy heterointerfaces with different thicknesses (2-30 nm) and a wide range of doping ratios x (0.14-0.56). The 2DEG conducting behavior is maintained until x = 0.42, which is higher compared with similar studies. The varying x results in the coexistence of rich properties like a weak anti-localization (0.14-0.42), abnormal Hall effect (0.28 & 0.42), Lifshitz transition (0.42) and stable structure. These results confirm the potential of this strategy to tailor 2DEG in all-oxide interfaces.
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Affiliation(s)
- Hang Yin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Ruishu Yang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Shuanhu Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China.
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39
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Ren T, Li M, Sun X, Ju L, Liu Y, Hong S, Sun Y, Tao Q, Zhou Y, Xu ZA, Xie Y. Two-dimensional superconductivity at the surfaces of KTaO 3 gated with ionic liquid. SCIENCE ADVANCES 2022; 8:eabn4273. [PMID: 35658041 PMCID: PMC9166623 DOI: 10.1126/sciadv.abn4273] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 04/19/2022] [Indexed: 05/28/2023]
Abstract
The recent discovery of superconductivity at the interfaces between KTaO3 and EuO (or LaAlO3) gives birth to the second generation of oxide interface superconductors. This superconductivity exhibits a strong dependence on the surface plane of KTaO3, in contrast to the seminal LaAlO3/SrTiO3 interface, and the superconducting transition temperature Tc is enhanced by one order of magnitude. For understanding its nature, a crucial issue arises: Is the formation of oxide interfaces indispensable for the occurrence of superconductivity? Exploiting ionic liquid (IL) gating, we are successful in achieving superconductivity at KTaO3(111) and KTaO3(110) surfaces with Tc up to 2.0 and 1.0 K, respectively. This oxide-IL interface superconductivity provides a clear evidence that the essential physics of KTaO3 interface superconductivity lies in the KTaO3 surfaces doped with electrons. Moreover, the controllability with IL technique paves the way for studying the intrinsic superconductivity in KTaO3.
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Affiliation(s)
- Tianshuang Ren
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Miaocong Li
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Xikang Sun
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Lele Ju
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Siyuan Hong
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Yanqiu Sun
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Qian Tao
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Yi Zhou
- Beijing National Laboratory for Condensed Matter
Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190,
China
- Songshan Lake Materials Laboratory, Dongguan,
Guangdong 523808, China
- Kavli Institute for Theoretical Sciences, CAS Center
for Excellence in Topological Quantum Computation, University of Chinese Academy
of Sciences, Beijing 100190, China
| | - Zhu-An Xu
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
- Collaborative Innovation Center of Advanced
Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
- Collaborative Innovation Center of Advanced
Microstructures, Nanjing University, Nanjing 210093, China
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40
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Yan X, Wrobel F, Tung IC, Zhou H, Hong H, Rodolakis F, Bhattacharya A, McChesney JL, Fong DD. Origin of the 2D Electron Gas at the SrTiO 3 Surface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200866. [PMID: 35429184 DOI: 10.1002/adma.202200866] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 04/04/2022] [Indexed: 06/14/2023]
Abstract
Bulk SrTiO3 is a well-known band insulator and the most common substrate used in the field of complex oxide heterostructures. Its surface and interface with other oxides, however, have demonstrated a variety of remarkable behaviors distinct from those expected. In this work, using a suite of in situ techniques to monitor both the atomic and electronic structures of the SrTiO3 (001) surface prior to and during growth, the disappearance and re-appearance of a 2D electron gas (2DEG) is observed after the completion of each SrO and TiO2 monolayer, respectively. The 2DEG is identified with the TiO2 double layer present at the initial SrTiO3 surface, which gives rise to a surface potential and mobile electrons due to vacancies within the TiO2-x adlayer. Much like the electronic reconstruction discovered in other systems, two atomic planes are required, here supplied by the double layer. The combined in situ scattering/spectroscopy findings resolve a number of longstanding issues associated with complex oxide interfaces, facilitating the employment of atomic-scale defect engineering in oxide electronics.
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Affiliation(s)
- Xi Yan
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Friederike Wrobel
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - I-Cheng Tung
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Hawoong Hong
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Fanny Rodolakis
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Anand Bhattacharya
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Jessica L McChesney
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Dillon D Fong
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
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41
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Gupta A, Silotia H, Kumari A, Dumen M, Goyal S, Tomar R, Wadehra N, Ayyub P, Chakraverty S. KTaO 3 -The New Kid on the Spintronics Block. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106481. [PMID: 34961972 DOI: 10.1002/adma.202106481] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Revised: 11/16/2021] [Indexed: 06/14/2023]
Abstract
Long after the heady days of high-temperature superconductivity, the oxides came back into the limelight in 2004 with the discovery of the 2D electron gas (2DEG) in SrTiO3 (STO) and several heterostructures based on it. Not only do these materials exhibit interesting physics, but they have also opened up new vistas in oxide electronics and spintronics. However, much of the attention has recently shifted to KTaO3 (KTO), a material with all the "good" properties of STO (simple cubic structure, high mobility, etc.) but with the additional advantage of a much larger spin-orbit coupling. In this state-of-the-art review of the fascinating world of KTO, it is attempted to cover the remarkable progress made, particularly in the last five years. Certain unsolved issues are also indicated, while suggesting future research directions as well as potential applications. The range of physical phenomena associated with the 2DEG trapped at the interfaces of KTO-based heterostructures include spin polarization, superconductivity, quantum oscillations in the magnetoresistance, spin-polarized electron transport, persistent photocurrent, Rashba effect, topological Hall effect, and inverse Edelstein Effect. It is aimed to discuss, on a single platform, the various fabrication techniques, the exciting physical properties and future application possibilities of this family of materials.
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Affiliation(s)
- Anshu Gupta
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Harsha Silotia
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Anamika Kumari
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Manish Dumen
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Saveena Goyal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Ruchi Tomar
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Neha Wadehra
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Pushan Ayyub
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Suvankar Chakraverty
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
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42
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Hameed S, Pelc D, Anderson ZW, Klein A, Spieker RJ, Yue L, Das B, Ramberger J, Lukas M, Liu Y, Krogstad MJ, Osborn R, Li Y, Leighton C, Fernandes RM, Greven M. Enhanced superconductivity and ferroelectric quantum criticality in plastically deformed strontium titanate. NATURE MATERIALS 2022; 21:54-61. [PMID: 34608284 DOI: 10.1038/s41563-021-01102-3] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2020] [Accepted: 08/11/2021] [Indexed: 06/13/2023]
Abstract
The properties of quantum materials are commonly tuned using experimental variables such as pressure, magnetic field and doping. Here we explore a different approach using irreversible, plastic deformation of single crystals. We show that compressive plastic deformation induces low-dimensional superconductivity well above the superconducting transition temperature (Tc) of undeformed SrTiO3, with evidence of possible superconducting correlations at temperatures two orders of magnitude above the bulk Tc. The enhanced superconductivity is correlated with the appearance of self-organized dislocation structures, as revealed by diffuse neutron and X-ray scattering. We also observe deformation-induced signatures of quantum-critical ferroelectric fluctuations and inhomogeneous ferroelectric order using Raman scattering. Our results suggest that strain surrounding the self-organized dislocation structures induces local ferroelectricity and quantum-critical dynamics that strongly influence Tc, consistent with a theory of superconductivity enhanced by soft polar fluctuations. Our results demonstrate the potential of plastic deformation and dislocation engineering for the manipulation of electronic properties of quantum materials.
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Affiliation(s)
- S Hameed
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA
| | - D Pelc
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA.
- Department of Physics, Faculty of Science, University of Zagreb, Zagreb, Croatia.
| | - Z W Anderson
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA
| | - A Klein
- Department of Physics, Faculty of Natural Sciences, Ariel University, Ariel, Israel
| | - R J Spieker
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA
| | - L Yue
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - B Das
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - J Ramberger
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - M Lukas
- Faculty of Mechanical Engineering and Naval Architecture, University of Zagreb, Zagreb, Croatia
| | - Y Liu
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - M J Krogstad
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - R Osborn
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Y Li
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
| | - C Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA
| | - R M Fernandes
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA
| | - M Greven
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, USA.
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43
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Thoutam LR, Truttmann TK, Rajapitamahuni AK, Jalan B. Hysteretic Magnetoresistance in a Non-Magnetic SrSnO 3 Film via Thermal Coupling to Dynamic Substrate Behavior. NANO LETTERS 2021; 21:10006-10011. [PMID: 34807629 DOI: 10.1021/acs.nanolett.1c03653] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide films and heterostructures. Here, magnetotransport is investigated in a nonmagnetic La-doped SrSnO3 film. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ∼±3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeding 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the substrate. Given GdScO3 and similar substrates are commonly used, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for heterostructures utilizing these substrates.
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Affiliation(s)
- Laxman Raju Thoutam
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Tristan K Truttmann
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Anil Kumar Rajapitamahuni
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
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44
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Ricciardulli AG, Yang S, Smet JH, Saliba M. Emerging perovskite monolayers. NATURE MATERIALS 2021; 20:1325-1336. [PMID: 34112976 DOI: 10.1038/s41563-021-01029-9] [Citation(s) in RCA: 52] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Accepted: 04/28/2021] [Indexed: 05/26/2023]
Abstract
The library of two-dimensional (2D) materials has been enriched over recent years with novel crystal architectures endowed with diverse exciting functionalities. Bulk perovskites, including metal-halide and oxide systems, provide access to a myriad of properties through molecular engineering. Their tunable electronic structure offers remarkable features from long carrier-diffusion lengths and high absorption coefficients in metal-halide perovskites to high-temperature superconductivity, magnetoresistance and ferroelectricity in oxide perovskites. Emboldened by the 2D materials research, perovskites down to the monolayer limit have recently emerged. Like other 2D species, perovskites with reduced dimensionality are expected to exhibit new physics and to herald next-generation multifunctional devices. In this Review, we critically assess the preliminary studies on the synthetic routes and inherent properties of monolayer perovskite materials. We also discuss how to exploit them for widespread applications and provide an outlook on the challenges and opportunities that lie ahead for this enticing class of 2D materials.
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Affiliation(s)
- Antonio Gaetano Ricciardulli
- Technical University of Darmstadt, Darmstadt, Germany
- Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France
| | - Sheng Yang
- Max Planck Institute for Solid State Research, Stuttgart, Germany.
| | - Jurgen H Smet
- Max Planck Institute for Solid State Research, Stuttgart, Germany.
| | - Michael Saliba
- Technical University of Darmstadt, Darmstadt, Germany.
- Institute for Photovoltaics, University of Stuttgart, Stuttgart, Germany.
- Helmholtz Young Investigator Group FRONTRUNNER, Forschungszentrum Jülich, Jülich, Germany.
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45
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Vicente-Arche LM, Bréhin J, Varotto S, Cosset-Cheneau M, Mallik S, Salazar R, Noël P, Vaz DC, Trier F, Bhattacharya S, Sander A, Le Fèvre P, Bertran F, Saiz G, Ménard G, Bergeal N, Barthélémy A, Li H, Lin CC, Nikonov DE, Young IA, Rault JE, Vila L, Attané JP, Bibes M. Spin-Charge Interconversion in KTaO 3 2D Electron Gases. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102102. [PMID: 34499763 DOI: 10.1002/adma.202102102] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2021] [Revised: 07/13/2021] [Indexed: 06/13/2023]
Abstract
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO3 (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO3 is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO3 single crystals, characterized by angle-resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. Their spin-charge interconversion efficiency is then compared with that of STO-based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO3 2DEGs into spin-orbitronic devices is compared.
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Affiliation(s)
- Luis M Vicente-Arche
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Julien Bréhin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Sara Varotto
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Maxen Cosset-Cheneau
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Srijani Mallik
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Raphaël Salazar
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - Paul Noël
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Diogo C Vaz
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Felix Trier
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Suvam Bhattacharya
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Anke Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Patrick Le Fèvre
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - François Bertran
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - Guilhem Saiz
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, 75231, France
| | - Gerbold Ménard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, 75231, France
| | - Nicolas Bergeal
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, 75231, France
| | - Agnès Barthélémy
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Hai Li
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Chia-Ching Lin
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | | | - Ian A Young
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Julien E Rault
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - Laurent Vila
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Jean-Philippe Attané
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Manuel Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
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46
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Dubnack O, Müller FA. Oxidic 2D Materials. MATERIALS 2021; 14:ma14185213. [PMID: 34576436 PMCID: PMC8469416 DOI: 10.3390/ma14185213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 09/07/2021] [Accepted: 09/08/2021] [Indexed: 11/18/2022]
Abstract
The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.
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Affiliation(s)
- Oliver Dubnack
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
| | - Frank A. Müller
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany
- Correspondence:
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47
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Sun Y, Liu Y, Hong S, Chen Z, Zhang M, Xie Y. Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures. PHYSICAL REVIEW LETTERS 2021; 127:086804. [PMID: 34477422 DOI: 10.1103/physrevlett.127.086804] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 07/29/2021] [Indexed: 06/13/2023]
Abstract
Recently, two-dimensional superconductivity was discovered at the oxide interface between KTaO_{3} and LaAlO_{3} (or EuO), whose superconducting transition temperature T_{c} is up to 2.2 K and exhibits strong crystalline-orientation dependence. However, the origin of the interfacial electron gas, which becomes superconducting at low temperatures, remains elusive. Taking the LaAlO_{3}/KTaO_{3}(111) interface as an example, we have demonstrated that there exists a critical LaAlO_{3} thickness of ∼3 nm. Namely, a thinner LaAlO_{3} film will give rise to an insulating but not conducting (or superconducting) interface. By in situ transport measurements during growth, we have also revealed that the critical thickness can be suppressed if exposure to oxygen is avoided. These observations, together with other control experiments, suggest strongly that the origination of the electron gas is dominated by the electron transfer that is from oxygen vacancies in the LaAlO_{3} film to the KTaO_{3} substrate.
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Affiliation(s)
- Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Siyuan Hong
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Zheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Meng Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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48
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Chen Z, Liu Y, Zhang H, Liu Z, Tian H, Sun Y, Zhang M, Zhou Y, Sun J, Xie Y. Electric field control of superconductivity at the LaAlO 3/KTaO 3(111) interface. Science 2021; 372:721-724. [PMID: 33986177 DOI: 10.1126/science.abb3848] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2020] [Accepted: 04/02/2021] [Indexed: 11/02/2022]
Abstract
The oxide interface between LaAlO3 and KTaO3(111) can harbor a superconducting state. We report that by applying a gate voltage (V G) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped T c-V G dependence, where T c is the transition temperature. The electric gating has only a minor effect on carrier density but a strong one on mobility. We interpret the tuning of mobility in terms of change in the spatial profile of the carriers in the interface and hence, effective disorder. As the temperature is decreased, the resistance saturates at the lowest temperature on both superconducting and insulating sides, suggesting the emergence of a quantum metallic state associated with a failed superconductor and/or fragile insulator.
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Affiliation(s)
- Zheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Meng Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yi Zhou
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.,Kavli Institute for Theoretical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. .,Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.,School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China. .,Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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49
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Huyan S, Lyu Y, Wang H, Deng L, Wu Z, Lv B, Zhao K, Tian F, Gao G, Liu RZ, Ma X, Tang Z, Gooch M, Chen S, Ren Z, Qian X, Chu CW. Interfacial Superconductivity Achieved in Parent AEFe 2As 2 (AE = Ca, Sr, Ba) by a Simple and Realistic Annealing Route. NANO LETTERS 2021; 21:2191-2198. [PMID: 33646790 DOI: 10.1021/acs.nanolett.0c04995] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Materials with interfaces often exhibit extraordinary phenomena exemplified by rich physics, such as high-temperature superconductivity and enhanced electronic correlations. However, demonstrations of confined interfaces to date have involved intensive effort and fortuity, and no simple path is consistently available. Here, we report the achievement of interfacial superconductivity in the nonsuperconducting parent compounds AEFe2As2, where AE = Ca, Sr, or Ba, by simple subsequent annealing of the as-grown samples in an atmosphere of As, P, or Sb. Our results indicate that the superconductivity originates from electron transfer at the interface of the hybrid van der Waals heterostructures, consistent with the two-dimensional superconducting transition observed. The observations suggest a common origin of interfaces for the nonbulk superconductivity previously reported in the AEFe2As2 compound family and provide insight for the further exploration of interfacial superconductivity.
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Affiliation(s)
- Shuyuan Huyan
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Yanfeng Lyu
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Hua Wang
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Liangzi Deng
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Zheng Wu
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Bing Lv
- Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Kui Zhao
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Fei Tian
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Rui-Zhe Liu
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Xiaojing Ma
- Department of Chemistry and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Zhongjia Tang
- Department of Chemistry and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Melissa Gooch
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Shuo Chen
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Zhifeng Ren
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Ching-Wu Chu
- Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, United States
- Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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50
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Liu C, Yan X, Jin D, Ma Y, Hsiao HW, Lin Y, Bretz-Sullivan TM, Zhou X, Pearson J, Fisher B, Jiang JS, Han W, Zuo JM, Wen J, Fong DD, Sun J, Zhou H, Bhattacharya A. Two-dimensional superconductivity and anisotropic transport at KTaO
3
(111) interfaces. Science 2021; 371:716-721. [DOI: 10.1126/science.aba5511] [Citation(s) in RCA: 59] [Impact Index Per Article: 19.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2019] [Revised: 04/14/2020] [Accepted: 01/08/2021] [Indexed: 01/14/2023]
Affiliation(s)
- Changjiang Liu
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Xi Yan
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
- Beijing National Laboratory for Condensed Matter and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
| | - Dafei Jin
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Yang Ma
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People’s Republic of China
| | - Haw-Wen Hsiao
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
| | - Yulin Lin
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | | | - Xianjing Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - John Pearson
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Brandon Fisher
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - J. Samuel Jiang
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Wei Han
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People’s Republic of China
| | - Jian-Min Zuo
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
| | - Jianguo Wen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Dillon D. Fong
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- University of Jinan, Spintronics Institute, Jinan 250022, Shandong, People’s Republic of China
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Anand Bhattacharya
- Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
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