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Gao H, Liu Z, Gong Y, Ke C, Guo N, Wu J, Zeng X, Guo J, Li S, Cheng Z, Li J, Zhu H, Zhang LZ, Liu X, Liu S, Xie L, Zheng Q. Picometer-Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404628. [PMID: 39367557 DOI: 10.1002/adma.202404628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 09/26/2024] [Indexed: 10/06/2024]
Abstract
Ferroelectric 2D van der Waals (vdW) layered materials are attracting increasing attention due to their potential applications in next-generation nanoelectronics and in-memory computing with polarization-dependent functionalities. Despite the critical role of polarization in governing ferroelectricity behaviors, its origin and relation with local structures in 2D vdW layered materials have not been fully elucidated so far. Here, intralayer sliding of approximately six degrees within each quadruple-layer of the prototype 2D vdW ferroelectrics InSe is directly observed and manipulated using sub-angstrom resolution imaging and in situ biasing in an aberration-corrected scanning transmission electron microscope. The in situ electric manipulation further indicates that the reversal of intralayer sliding can be achieved by altering the electric field direction. Density functional theory calculations reveal that the reversible picometer-level intralayer sliding is responsible for switchable out-of-plane polarization. The observation and manipulation of intralayer sliding demonstrate the structural origin of ferroelectricity in InSe and establish a dynamic structural variation model for future investigations on more 2D ferroelectric materials.
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Affiliation(s)
- Hanbin Gao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Ziyuan Liu
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yue Gong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Changming Ke
- Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Ning Guo
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Xin Zeng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jianfeng Guo
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Songyang Li
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Zhihai Cheng
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Jiawei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100190, China
| | - Hongwei Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100190, China
| | - Li-Zhi Zhang
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shi Liu
- Department of Physics, School of Science and Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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2
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Wan S, Huang H, Liu H, Liu H, Li Z, Li Y, Liao Z, Lanza M, Zeng H, Zhou Y. Intertwined Flexoelectricity and Stacking Ferroelectricity in Marginally Twisted hBN Moiré Superlattice. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410563. [PMID: 39367559 DOI: 10.1002/adma.202410563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2024] [Revised: 09/11/2024] [Indexed: 10/06/2024]
Abstract
Moiré superlattices in twisted van der Waals homo/heterostructures present a fascinating interplay between electronic and atomic structures, with potential applications in electronic and optoelectronic devices. Flexoelectricity, an electromechanical coupling between electric polarization and strain gradient, is intrinsic to these superlattices because of the lattice misfit strain at the atomic scale. However, due to its weak magnitude, the effect of flexoelectricity on moiré ferroelectricity has remained underexplored. Here, the role of flexoelectricity in shaping and modulating the moiré ferroelectric patterns in twisted hBN homojunction is unveiled. Enhanced flexoelectric effects induce unique stacking ferroelectric domains with hollow triangular structures. Interlayer bubbles influence domain shape and periodicity through local electric field modulation, and tip-stress enables the reversible manipulation of domain area and polarization direction. These findings highlight the impact of flexoelectric effects on moiré ferroelectricity, offering a new tuning knob for its manipulation.
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Affiliation(s)
- Siyuan Wan
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
- National Institute of LED on Silicon Substrate, Nanchang University, Nanchang, 330031, China
| | - Hanying Huang
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Huanlin Liu
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhixiong Li
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Yue Li
- School of Instrument Science and Optoelectronic Engineering, Nanchang HangKong University, Nanchang, 330063, China
| | - Zhimin Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
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3
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Zojer E. Electrostatically Designing Materials and Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406178. [PMID: 39194368 DOI: 10.1002/adma.202406178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 07/08/2024] [Indexed: 08/29/2024]
Abstract
Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.
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Affiliation(s)
- Egbert Zojer
- Institute of Solid State Physics, NAWI Graz, Petersgasse 16, Graz, A-8010, Austria
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4
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Tsang CS, Zheng X, Ly TH, Zhao J. Recent progresses in transmission electron microscopy studies of two-dimensional ferroelectrics. Micron 2024; 185:103678. [PMID: 38941681 DOI: 10.1016/j.micron.2024.103678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 06/03/2024] [Accepted: 06/13/2024] [Indexed: 06/30/2024]
Abstract
The rich potential of two-dimensional materials endows them with superior properties suitable for a wide range of applications, thereby attracting substantial interest across various fields. The ongoing trend towards device miniaturization aligns with the development of materials at progressively smaller scales, aiming to achieve higher integration density in electronics. In the realm of nano-scaling ferroelectric phenomena, numerous new two-dimensional ferroelectric materials have been predicted theoretically and subsequently validated through experimental confirmation. However, the capabilities of conventional tools, such as electrical measurements, are limited in providing a comprehensive investigation into the intrinsic origins of ferroelectricity and its interactions with structural factors. These factors include stacking, doping, functionalization, and defects. Consequently, the progress of potential applications, such as high-density memory devices, energy conversion systems, sensing technologies, catalysis, and more, is impeded. In this paper, we present a review of recent research that employs advanced transmission electron microscopy (TEM) techniques for the direct visualization and analysis of ferroelectric domains, domain walls, and other crucial features at the atomic level within two-dimensional materials. We discuss the essential interplay between structural characteristics and ferroelectric properties on the nanoscale, which facilitates understanding of the complex relationships governing their behavior. By doing so, we aim to pave the way for future innovative applications in this field.
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Affiliation(s)
- Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China; Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, China; City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China; The Research Institute for Advanced Manufacturing, The Hong Kong polytechnic University, Hong Kong, China.
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5
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Liu X, Shan J, Cao T, Zhu L, Ma J, Wang G, Shi Z, Yang Q, Ma M, Liu Z, Yan S, Wang L, Dai Y, Xiong J, Chen F, Wang B, Pan C, Wang Z, Cheng B, He Y, Luo X, Lin J, Liang SJ, Miao F. On-device phase engineering. NATURE MATERIALS 2024; 23:1363-1369. [PMID: 38664497 DOI: 10.1038/s41563-024-01888-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 04/03/2024] [Indexed: 08/15/2024]
Abstract
In situ tailoring of two-dimensional materials' phases under external stimulus facilitates the manipulation of their properties for electronic, quantum and energy applications. However, current methods are mainly limited to the transitions among phases with unchanged chemical stoichiometry. Here we propose on-device phase engineering that allows us to realize various lattice phases with distinct chemical stoichiometries. Using palladium and selenide as a model system, we show that a PdSe2 channel with prepatterned Pd electrodes can be transformed into Pd17Se15 and Pd4Se by thermally tailoring the chemical composition ratio of the channel. Different phase configurations can be obtained by precisely controlling the thickness and spacing of the electrodes. The device can be thus engineered to implement versatile functions in situ, such as exhibiting superconducting behaviour and achieving ultralow-contact resistance, as well as customizing the synthesis of electrocatalysts. The proposed on-device phase engineering approach exhibits a universal mechanism and can be expanded to 29 element combinations between a metal and chalcogen. Our work highlights on-device phase engineering as a promising research approach through which to exploit fundamental properties as well as their applications.
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Affiliation(s)
- Xiaowei Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junjie Shan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Liang Zhu
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Jiayu Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Zude Shi
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Qishuo Yang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
| | - Mingyu Ma
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zenglin Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Shengnan Yan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Lizheng Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yudi Dai
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Junlin Xiong
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fanqiang Chen
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Buwei Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chen Pan
- Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing, China
| | - Zhenlin Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Physics, Nanjing University of Science and Technology, Nanjing, China
| | - Yongmin He
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou, China.
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen, China.
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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6
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Hassan Y, Singh B, Joe M, Son BM, Ngo TD, Jang Y, Sett S, Singha A, Biswas R, Bhakar M, Watanabe K, Taniguchi T, Raghunathan V, Sheet G, Lee Z, Yoo WJ, Srivastava PK, Lee C. Twist-Controlled Ferroelectricity and Emergent Multiferroicity in WSe 2 Bilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406290. [PMID: 39318077 DOI: 10.1002/adma.202406290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Revised: 08/27/2024] [Indexed: 09/26/2024]
Abstract
Recently, researchers have been investigating artificial ferroelectricity, which arises when inversion symmetry is broken in certain R-stacked, i.e., zero-degree twisted, van der Waals (vdW) bilayers. Here, the study reports the twist-controlled ferroelectricity in tungsten diselenide (WSe2) bilayers. The findings show noticeable room temperature ferroelectricity that decreases with twist angle within the range 0° < θ < 3°, and disappears completely for θ ≥ 4°. This variation aligns with moiré length scale-controlled ferroelectric dynamics (0° < θ < 3°), while loss beyond 4° may relate to twist-controlled commensurate to non-commensurate transitions. This twist-controlled ferroelectricity serves as a spectroscopic tool for detecting transitions between commensurate and incommensurate moiré patterns. At 5.5 K, 3° twisted WSe2 exhibits ferroelectric and correlation-driven ferromagnetic ordering, indicating twist-controlled multiferroic behavior. The study offers insights into twist-controlled coexisting ferro-ordering and serves as valuable spectroscopic tools.
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Affiliation(s)
- Yasir Hassan
- Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, South Korea
| | - Budhi Singh
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Minwoong Joe
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Byoung-Min Son
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Tien Dat Ngo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Younggeun Jang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, South Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Arup Singha
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Rabindra Biswas
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Monika Bhakar
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab, 140306, India
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Varun Raghunathan
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Goutam Sheet
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab, 140306, India
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, South Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | | | - Changgu Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
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7
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Wang J, Li X, Ma X, Chen L, Liu JM, Duan CG, Íñiguez-González J, Wu D, Yang Y. Ultrafast Switching of Sliding Polarization and Dynamical Magnetic Field in van der Waals Bilayers Induced by Light. PHYSICAL REVIEW LETTERS 2024; 133:126801. [PMID: 39373442 DOI: 10.1103/physrevlett.133.126801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 05/03/2024] [Accepted: 08/14/2024] [Indexed: 10/08/2024]
Abstract
Sliding ferroelectricity is a unique type of polarity recently observed in van der Waals bilayers with a suitable stacking. However, electric-field control of sliding ferroelectricity is hard and could induce large coercive electric fields and serious leakage currents that corrode the ferroelectricity and electronic properties, which are essential for modern two-dimensional electronics and optoelectronics. Here, we proposed laser-pulse deterministic control of sliding polarization in bilayer hexagonal boron nitride by first principles and molecular dynamics simulation with machine-learned force fields. The laser pulses excite shear modes that exhibit certain directional movements of lateral sliding between bilayers. The vibration of excited modes under laser pulses is predicted to overcome the energy barrier and achieve the switching of sliding polarization. Furthermore, it is found that three possible sliding transitions-between AB (BA) and BA (AB) stacking-can lead to the occurrence of dynamical magnetic fields along three different directions. Remarkably, the magnetic fields are generated by the simple linear motion of nonmagnetic species, without any need for more exotic (circular, spiral) pathways. Such predictions of deterministic control of sliding polarization and multistates of dynamical magnetic field thus expand the potential applications of sliding ferroelectricity in memory and electronic devices.
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Affiliation(s)
- Jian Wang
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xu Li
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xingyue Ma
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | | | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | | | | | - Di Wu
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
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8
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Yan X, Wang J, Liu Y, Yang G. Janus Cr 2BN Monolayer with Ferroelectricity and Room-Temperature Ferromagnetism. Chemphyschem 2024; 25:e202400538. [PMID: 38805005 DOI: 10.1002/cphc.202400538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2024] [Revised: 05/27/2024] [Accepted: 05/28/2024] [Indexed: 05/29/2024]
Abstract
Janus monolayers, a special kind of two-dimensional materials, offer an exciting platform for the development of novel electronic/spintronic devices because of their out-of-plane asymmetry. Herein, we propose a sandwich liked Janus tetragonal Cr2BN monolayer with ferroelectricity and ferromagnetism through first-principles calculations. The predicted magnetic moment is up to ~3.0 μB/Cr originating from the distorted square crystal field induced by out-of-plane asymmetry. The Cr2BN monolayer possesses an intrinsic ferromagnetism with a high Curie temperature of 383 K and a sizeable magnetic anisotropy energy of 171 μeV/Cr. Its robust ferromagnetism, dominating by the multi-anion mediated super-exchange interactions, can even resist -5 % ~5 % biaxial strain. Its large cohesive energy and high dynamical/thermal stability provide a strong feasibility for experimental synthesis. These intriguing properties render the Cr2BN monolayer a promising material for nanoscale spintronic devices.
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Affiliation(s)
- Xu Yan
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, China
| | - Junyuan Wang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, China
| | - Guochun Yang
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, 066004, China
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Northeast Normal University, Changchun, 130024, China
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9
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Wang Y, Zeng Z, Tian Z, Li C, Braun K, Huang L, Li Y, Luo X, Yi J, Wu G, Liu G, Li D, Zhou Y, Chen M, Wang X, Pan A. Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410696. [PMID: 39276006 DOI: 10.1002/adma.202410696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2024] [Revised: 09/04/2024] [Indexed: 09/16/2024]
Abstract
2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.
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Affiliation(s)
- Yufan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Cheng Li
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, 72076, Tübingen, Germany
| | - Lanyu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xinyi Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Zhou
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
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10
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Loes MJ, Bagheri S, Sinitskii A. Layer-Dependent Gas Sensing Mechanism of 2D Titanium Carbide (Ti 3C 2T x) MXene. ACS NANO 2024. [PMID: 39269815 DOI: 10.1021/acsnano.4c08225] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/15/2024]
Abstract
Monolayers of Ti3C2Tx MXene and bilayer structures formed by partially overlapping monolayer flakes exhibit opposite sensing responses to a large scope of molecular analytes. When exposed to reducing analytes, monolayer MXene flakes show increased electrical conductivity, i.e., an n-type behavior, while bilayer structures become less conductive, exhibiting a p-type behavior. On the contrary, both monolayers and bilayers show unidirectional sensing responses with increased resistivity when exposed to oxidizing analytes. The sensing responses of Ti3C2Tx monolayers and bilayers are dominated by entirely different mechanisms. The sensing behavior of MXene monolayers is dictated by the charge transfer from adsorbed molecules and the response direction is consistent with the donor/acceptor properties of the analyte and the intrinsic n-type character of Ti3C2Tx. In contrast, the bilayer MXene structures always show the same response regardless of the donor/acceptor character of the analyte, and the resistivity always increases because of the intercalation of molecules between the Ti3C2Tx layers. This study explains the sensing behavior of bulk MXene sensors based on multiflake assemblies, in which this intercalation mechanism results in universal increase in resistance that for many analytes is seemingly inconsistent with the n-type character of the material. By scaling MXene sensors down from multiflake to single-flake level, we disentangled the charge transfer and intercalation effects and unraveled their contributions. In particular, we show that the charge transfer has a much faster kinetics than the intercalation process. Finally, we demonstrate that the layer-dependent gas sensing properties of MXenes can be employed for the design of sensor devices with enhanced molecular recognition.
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Affiliation(s)
- Michael J Loes
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Saman Bagheri
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Alexander Sinitskii
- Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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11
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Fan FR, Xiao C, Yao W. Intrinsic dipole Hall effect in twisted MoTe 2: magnetoelectricity and contact-free signatures of topological transitions. Nat Commun 2024; 15:7997. [PMID: 39266571 PMCID: PMC11393455 DOI: 10.1038/s41467-024-52314-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Accepted: 08/30/2024] [Indexed: 09/14/2024] Open
Abstract
We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe2 moiré superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic configurations. The dipole Hall current, in linear response to in-plane electric field, generates an in-plane orbital magnetization M∥ along the field, through which an AC field can drive magnetization oscillation up to THz range. Upon the continuous topological phase transitions from trivial to quantum anomalous Hall states in both ferromagnetic and antiferromagnetic configurations, the dipole Hall current and M∥ have an abrupt sign change, enabling contact-free detection of the transitions through the magnetic stray field. In configurations where the linear response is forbidden by symmetry, the dipole Hall current and M∥ appear as a crossed nonlinear response to both in-plane and out-of-plane electric fields. These magnetoelectric phenomena showcase fascinating functionalities of insulators from the interplay between magnetism, topology, and electrical polarization.
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Affiliation(s)
- Feng-Ren Fan
- New Cornerstone Science Laboratory, Department of Physics, University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Xiao
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Wang Yao
- New Cornerstone Science Laboratory, Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
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12
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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13
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Sun W, Wang W, Yang C, Hu R, Yan S, Huang S, Cheng Z. Altermagnetism Induced by Sliding Ferroelectricity via Lattice Symmetry-Mediated Magnetoelectric Coupling. NANO LETTERS 2024; 24:11179-11186. [PMID: 39213606 DOI: 10.1021/acs.nanolett.4c02248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Altermagnets, distinct from conventional ferromagnets or antiferromagnets, have recently attracted attention as the third category of collinear magnets, which exhibit the coexistence of zero net magnetization and spin polarization due to their unique lattice symmetries. Meanwhile, the additional layer degrees of freedom in multilayer sliding ferroelectrics offer opportunities for coupling with lattice symmetries, paving the way for an innovative approach to constructing multiferroic lattices. In this study, altermagnetic tuning in SnS2/MnPSe3/SnS2 heterostructures is achieved by breaking and restoration of lattice inversion symmetry through sliding ferroelectric switching. First-principles calculations reveal that the spin density and corresponding time-reversal symmetry of MnPSe3 can be manipulated by lattice symmetry, triggering phase transitions between antiferromagnetism and altermagnetism. This research establishes a novel form of magnetoelectric coupling mediated by lattice symmetry and provides a theoretical basis for the design of miniature information processing and memory devices based on altermagnetism.
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Affiliation(s)
- Wei Sun
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Wenxuan Wang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
- School of Material Science and Engineering, University of Jinan, Jinan 250022, Shandong, China
| | - Changhong Yang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Riming Hu
- Institute for Smart Materials & Engineering, School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Shifeng Huang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Zhenxiang Cheng
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW 2500, Australia
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14
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Zhang J, Zhang J, Qi Y, Gong S, Xu H, Liu Z, Zhang R, Sadi MA, Sychev D, Zhao R, Yang H, Wu Z, Cui D, Wang L, Ma C, Wu X, Gao J, Chen YP, Wang X, Jiang Y. Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. Nat Commun 2024; 15:7648. [PMID: 39223121 PMCID: PMC11368953 DOI: 10.1038/s41467-024-52062-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Accepted: 08/26/2024] [Indexed: 09/04/2024] Open
Abstract
Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm2·V-1·s-1), continuous-variable resistive states can be observed with long-term retention (>105 s), fast speed (<20 ns) and high-density storage (>1.92 TB/cm2). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.
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Affiliation(s)
- Jinlei Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China
| | - Jiayong Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Macau SAR, China
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Shuainan Gong
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Hang Xu
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Zhenqi Liu
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Ran Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Mohammad A Sadi
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
| | - Demid Sychev
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
| | - Run Zhao
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Hongbin Yang
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, China
| | - Dapeng Cui
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
| | - Lin Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai, China
| | - Chunlan Ma
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Xiaoshan Wu
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Ju Gao
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- School for Optoelectronic Engineering, Zaozhuang University, ZaoZhuang, Shandong, China
| | - Yong P Chen
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus, Denmark.
| | - Xinran Wang
- School of Integrated Circuits, Nanjing University, Suzhou, China.
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, Suzhou, China.
- Suzhou Laboratory, Suzhou, China.
| | - Yucheng Jiang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China.
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China.
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15
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Chen Y, Lin J, Jiang J, Wang D, Yu Y, Li S, Pan J, Chen H, Mao W, Xing H, Ouyang F, Luo Z, Zhou S, Liu F, Wang S, Zhang J. Constructing Slip Stacking Diversity in Van der Waals Homobilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404734. [PMID: 39081101 DOI: 10.1002/adma.202404734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 06/12/2024] [Indexed: 09/19/2024]
Abstract
The van der Waals (vdW) interface provides two important degrees of freedom-twist and slip-to tune interlayer structures and inspire unique physics. However, constructing diversified high-quality slip stackings (i.e., lattice orientations between layers are parallel with only interlayer sliding) is more challenging than twisted stackings due to angstrom-scale structural discrepancies between different slip stackings, sparsity of thermodynamically stable candidates and insufficient mechanism understanding. Here, using transition metal dichalcogenide (TMD) homobilayers as a model system, this work theoretically elucidates that vdW materials with low lattice symmetry and weak interlayer coupling allow the creation of multifarious thermodynamically advantageous slip stackings, and experimentally achieves 13 and 9 slip stackings in 1T″-ReS2 and 1T″-ReSe2 bilayers via direct growth, which are systematically revealed by atomic-resolution scanning transmission electron microscopy (STEM), angle-resolved polarization Raman spectroscopy, and second harmonic generation (SHG) measurements. This work also develops modulation strategies to switch the stacking via grain boundaries (GBs) and to expand the slip stacking library from thermodynamic to kinetically favored structures via in situ thermal treatment. Finally, density functional theory (DFT) calculations suggest a prominent dependence of the pressure-induced electronic band structure transition on stacking configurations. These studies unveil a unique vdW epitaxy and offer a viable means for manipulating interlayer atomic registries.
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Affiliation(s)
- Yun Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China
| | - Jinguo Lin
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Junjie Jiang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
- School of Physics, Institute of Quantum Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Danyang Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Yue Yu
- School of Material Science and Engineering, Peking University, Beijing, 100871, China
| | - Shouheng Li
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Jun'an Pan
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China
| | - Haitao Chen
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410000, China
| | - Weiguo Mao
- College of Materials Science and Engineering, Changsha University of Science and Technology, Hunan, 410114, China
| | - Huanhuan Xing
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Fangping Ouyang
- School of Physics, Institute of Quantum Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
- School of Physics and Technology, State Key Laboratory of Chemistry and Utilization of Carbon Based Energy Resources, Xinjiang University, Urumqi, 830046, China
| | - Zheng Luo
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Shen Zhou
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Feng Liu
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shanshan Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Jin Zhang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China
- School of Material Science and Engineering, Peking University, Beijing, 100871, China
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16
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Deb S, Krause J, Faria Junior PE, Kempf MA, Schwartz R, Watanabe K, Taniguchi T, Fabian J, Korn T. Excitonic signatures of ferroelectric order in parallel-stacked MoS 2. Nat Commun 2024; 15:7595. [PMID: 39217159 PMCID: PMC11366029 DOI: 10.1038/s41467-024-52011-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Accepted: 08/22/2024] [Indexed: 09/04/2024] Open
Abstract
Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS2 using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals direct correspondence between spin-valley dynamics and stacking order.
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Affiliation(s)
- Swarup Deb
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
| | - Johannes Krause
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Michael Andreas Kempf
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Rico Schwartz
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Tobias Korn
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
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17
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Hu H, Zeng G, Ouyang G. Theoretical design of rhombohedral-stacked MoS 2-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances. Phys Chem Chem Phys 2024; 26:22549-22557. [PMID: 39150538 DOI: 10.1039/d4cp02278e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/17/2024]
Abstract
The sliding ferroelectrics formed by rhombohedral-stacked transition metal dichalcogenides (R-TMDs) greatly broaden the ferroelectric candidate materials. However, the weak ferroelectricity and many failure behaviors (such as irreversible lattice strains or defects) regulated by applied stimuli hinder their application. Here we systematically explore the interface electronic and transport properties of R-MoS2-based van der Waals heterojunctions (vdWHJs) by first-principles calculations. We find that the polarization and the band non-degeneracy of 2R-MoS2 increase with decreasing interlayer distance (d1). Moreover, the polarization direction of graphene (Gra)/2R-MoS2 P↑ state can be switched with a small increase in d1 (about 0.124 Å) due to the weakening of the polarization field (Ep) by a built-in electric field (Ei). The equilibrium state of superposition (|Ep + Ei|) or weakening (|Ep - Ei|) can be modulated by interface distances, which prompts vertical strain-regulated polarization or Schottky barriers. Furthermore, Gra/2R-MoS2 and Gra/R-MoS2/WS2 vdW ferroelectric tunneling junctions (FTJs) demonstrate ultra-high tunneling electroresistance (TER) ratios of 1.55 × 105 and 2.61 × 106, respectively, as the polarization direction switches. Our results provide an avenue for the design of future R-TMD vdW FTJs.
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Affiliation(s)
- Huamin Hu
- School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Guang Zeng
- School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
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18
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Tao ZG, Deng S, Prezhdo OV, Xiang H, Chu W, Gong XG. Tunable Ultrafast Charge Transfer across Homojunction Interface. J Am Chem Soc 2024; 146:24016-24023. [PMID: 39152917 DOI: 10.1021/jacs.4c07454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/19/2024]
Abstract
Charge transfer at heterojunction interfaces is a fundamental process that plays a crucial role in modern electronic and photonic devices. The essence of such charge transfer lies in the band offset, making charge transfer uncommon in a homojunction. Recently, sliding ferroelectricity has been proposed and confirmed in two-dimensional van der Waals stacked materials such as bilayer boron nitride. During the sliding of these layers, the band alignment shifts, creating conditions for charge separation at the interface. We employ ab initio nonadiabatic molecular dynamics simulations to elucidate the excited state carrier dynamics in bilayer boron pnictides. We propose that, akin to ferroelectric polarization flipping, the precise modulation of the distribution of excited state carriers can also be reached by sliding. Our results demonstrate that sliding induces a reversal of the frontier orbital distribution on the upper and lower layers, facilitating a robust interlayer carrier transfer. Notably, the interlayer carrier transfer is more pronounced in boron phosphide than in boron nitride, attributed to strong electron scattering in momentum space in boron nitride. We propose this novel method to manipulate carrier distribution and dynamics in a homojunction exhibiting sliding ferroelectricity, in general, paving a new way for developing advanced electronic and photonic devices.
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Affiliation(s)
- Zhi-Guo Tao
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Shihan Deng
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
- Department of Physics & Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Hongjun Xiang
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Weibin Chu
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Xin-Gao Gong
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
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19
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Ying B, Xin B, Li M, Zhou S, Liu Q, Zhu Z, Qin S, Wang WH, Zhu M. Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling. ACS APPLIED MATERIALS & INTERFACES 2024; 16:43806-43815. [PMID: 39105741 DOI: 10.1021/acsami.4c07233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2024]
Abstract
Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 1013 cm-2 from CrOCl to graphene, which is highly consistent with the enhanced conductivity of graphene. First-principles calculations based on density functional theory reveal that due to the large work function difference and the electronegativity of Cl atoms in CrOCl, the electrons are efficiently transferred from graphene to CrOCl, leading to hole doping in graphene. Our findings provide clues for understanding the exotic physical properties of graphene/CrOCl heterostructures, paving the way for further engineering of quantum electronic states by efficient interfacial charge coupling in van der Waals heterostructures.
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Affiliation(s)
- Binyu Ying
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Baojuan Xin
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Miaomiao Li
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Siyu Zhou
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Qiang Liu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Wei-Hua Wang
- Department of Electronic Science and Engineering, and Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Nankai University, Tianjin 300350, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
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20
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Zhong T, Zhang H, Wu M. Single Molecular Semi-Sliding Ferroelectricity/Multiferroicity. RESEARCH (WASHINGTON, D.C.) 2024; 7:0428. [PMID: 39105050 PMCID: PMC11298321 DOI: 10.34133/research.0428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Accepted: 06/25/2024] [Indexed: 08/07/2024]
Abstract
In recent years, the unique mechanism of sliding ferroelectricity with ultralow switching barriers has been experimentally verified in a series of 2-dimensional (2D) materials. However, its practical applications are hindered by the low polarizations, the challenges in synthesis of ferroelectric phases limited in specific stacking configurations, and the low density for data storage since the switching process involves large-area simultaneous sliding of a whole layer. Herein, through first-principles calculations, we propose a type of semi-sliding ferroelectricity in the single metal porphyrin molecule intercalated in 2D bilayers. An enhanced vertical polarization can be formed independent on stacking configurations and switched via sliding of the molecule accompanied by the vertical displacements of its metal ion anchored from the upper layer to the lower layer. Such semi-sliding ferroelectricity enables each molecule to store 1 bit data independently, and the density for data storage can be greatly enhanced. When the bilayer exhibits intralayer ferromagnetism and interlayer antiferromagnetic coupling, a considerable difference in Curie temperature between 2 layers and a switchable net magnetization can be formed due to the vertical polarization. At a certain range of temperature, the exchange of paramagnetic-ferromagnetic phases between 2 layers is accompanied by ferroelectric switching, leading to a hitherto unreported type of multiferroic coupling that is long-sought for efficient "magnetic reading + electric writing".
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Affiliation(s)
- Tingting Zhong
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China
| | - Hong Zhang
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China
| | - Menghao Wu
- School of Physics,
Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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21
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Du S, Yang W, Gao H, Dong W, Xu B, Watanabe K, Taniguchi T, Zhao J, Zheng F, Zhou J, Zheng S. Sliding Memristor in Parallel-Stacked Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404177. [PMID: 38973224 DOI: 10.1002/adma.202404177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 06/04/2024] [Indexed: 07/09/2024]
Abstract
Sliding ferroelectricity in 2D materials, arising from interlayer sliding-induced interlayer hybridization and charge redistribution at the van der Waals interface, offers a means to manipulate spontaneous polarization at the atomic scale through various methods such as stacking order, interfacial contact, and electric field. However, the practical application of extending 2D sliding ferroelectricity remains challenging due to the contentious mechanisms and the complex device structures required for ferroelectric switching. Here, a sliding memristor based on a graphene/parallel-stacked hexagonal boron nitride/graphene tunneling device, featuring a stable memristive hysteresis induced by interfacial polarizations and barrier height modulations, is presented. As the tunneling current density increases, the memristive window broadens, achieving an on/off ratio of ≈103 and 2 order decrease of the trigger current density, attributed to the interlayer migration of positively charged boron ions and the formation of conductive filaments, as supported by the theoretical calculations. The findings open a path for exploring the sliding memristor via a tunneling device and bridge the gap between sliding ferroelectricity and memory applications.
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Affiliation(s)
- Shuang Du
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Wenqi Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Jing Zhao
- School of Mechatronical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
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22
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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23
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Jiang H, Li L, Wu Y, Duan R, Yi K, Wu L, Zhu C, Luo L, Xu M, Zheng L, Gan X, Zhao W, Wang X, Liu Z. Vapor Deposition of Bilayer 3R MoS 2 with Room-Temperature Ferroelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400670. [PMID: 38830613 DOI: 10.1002/adma.202400670] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 05/17/2024] [Indexed: 06/05/2024]
Abstract
Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse-flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room-temperature ferroelectricity of CVD-grown MoS2 will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit.
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Affiliation(s)
- Hanjun Jiang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Yao Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Kongyang Yi
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lishu Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an, Shaanxi, 710127, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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24
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Zhang C, Zhang Z, Wu Z, Li X, Wu Y, Kang J. Modulation of Polarization in Sliding Ferroelectrics by Introducing Intrinsic Electric Fields. J Phys Chem Lett 2024:8049-8056. [PMID: 39083659 DOI: 10.1021/acs.jpclett.4c01693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
The emergence of sliding ferroelectricity facilitates low-barrier ferroelectrics in two-dimensional materials, while limited electric polarizations impede practical applications. Herein, we propose an effective strategy to enlarge the polarization by introducing an intrinsic electric field, exemplified by Janus transition metal dichalcogenides (TMDs) with the first-principle calculations. The intrinsic electric field is introduced and regulated by leveraging the electronegativity differences among chalcogens. An improved polarization is achieved in the Janus TeMoS bilayer with a polarization of 1.18 pC/m, a 65% enhancement compared to normal TMD bilayers. Through differential charge density analysis, the inner mechanism is attributed to the effects of intrinsic electric fields on charge redistribution. Furthermore, the feasibility of polarization reversal is determined by evaluating switching barriers and the responses under an electric field. The provided proposal is applicable and available for broader systems and will pave the way for the development of novel electronic devices.
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Affiliation(s)
- Chenhao Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Zongnan Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Zhiming Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Xu Li
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Yaping Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Junyong Kang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
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25
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Zhang C, Zhang S, Cui P, Zhang Z. Tunable Multistate Ferroelectricity of Unit-Cell-Thick BaTiO 3 Revived by a Ferroelectric SnS Monolayer via Interfacial Sliding. NANO LETTERS 2024; 24:8664-8670. [PMID: 38967611 DOI: 10.1021/acs.nanolett.4c02041] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2024]
Abstract
Stabilization of multiple polarization states at the atomic scale is pivotal for realizing high-density memory devices beyond prevailing bistable ferroelectric architectures. Here, we show that two-dimensional ferroelectric SnS or GeSe is able to revive and stabilize the ferroelectric order of three-dimensional ferroelectric BaTiO3, even when the latter is thinned to one unit cell in thickness. The underlying mechanism for overcoming the conventional detrimental critical thickness effect is attributed to facile interfacial inversion symmetry breaking by robust in-plane polarization of SnS or GeSe. Furthermore, when invoking interlayer sliding, we can stabilize multiple polarization states and achieve efficient interstate switching in the heterostructures, accompanied by dynamical ferroelectric skyrmionic excitations. When invoking sliding and twisting, the moiré domains exhibit nontrivial polar vortexes, which can be laterally displaced via different sliding schemes. These findings provide an intuitive avenue for simultaneously overcoming the standing critical thickness issue in bulk ferroelectrics and weak polarization issue in sliding ferroelectricity.
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Affiliation(s)
- Chuanbao Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Shunhong Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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26
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Sett S, Debnath R, Singha A, Mandal S, Jyothsna KM, Bhakar M, Watanabe K, Taniguchi T, Raghunathan V, Sheet G, Jain M, Ghosh A. Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides. NANO LETTERS 2024. [PMID: 39012311 DOI: 10.1021/acs.nanolett.4c01755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D ∼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.
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Affiliation(s)
- Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Rahul Debnath
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arup Singha
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shinjan Mandal
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - K M Jyothsna
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Monika Bhakar
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab 140306, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Goutam Sheet
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab 140306, India
| | - Manish Jain
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nanoscience and Engineering, Indian Institute of Science, Bangalore 560012, India
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27
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Bian R, He R, Pan E, Li Z, Cao G, Meng P, Chen J, Liu Q, Zhong Z, Li W, Liu F. Developing fatigue-resistant ferroelectrics using interlayer sliding switching. Science 2024; 385:57-62. [PMID: 38843352 DOI: 10.1126/science.ado1744] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/24/2024] [Indexed: 07/06/2024]
Abstract
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
- Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jiangang Chen
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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28
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Zheng H, Zhai D, Xiao C, Yao W. Interlayer Electric Multipoles Induced by In-Plane Field from Quantum Geometric Origins. NANO LETTERS 2024; 24:8017-8023. [PMID: 38899935 DOI: 10.1021/acs.nanolett.4c01657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
We show that interlayer charge transfer in 2D materials can be driven by an in-plane electric field, giving rise to electrical multipole generation in linear and second order in-plane field. The linear and nonlinear effects have quantum geometric origins in the Berry curvature and quantum metric, respectively, defined in extended parameter spaces characteristic of layered materials. We elucidate their symmetry characters and demonstrate sizable dipole and quadrupole polarizations, respectively, in twisted bilayers and trilayers of transition metal dichalcogenides. Furthermore, we show that this effect is strongly enhanced during the topological phase transition tuned by interlayer translation. The effects point to a new electric control on the layer quantum degree of freedom.
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Affiliation(s)
- Huiyuan Zheng
- New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Dawei Zhai
- New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Xiao
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Wang Yao
- New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
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29
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Castro M, Saéz G, Vergara Apaz P, Allende S, Nunez AS. Toward Fully Multiferroic van der Waals SpinFETs: Basic Design and Quantum Calculations. NANO LETTERS 2024; 24:7911-7918. [PMID: 38889449 DOI: 10.1021/acs.nanolett.4c01146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Manipulating spin transport enhances the functionality of electronic devices, allowing them to surpass physical constraints related to speed and power. For this reason, the use of van der Waals multiferroics at the interface of heterostructures offers promising prospects for developing high-performance devices, enabling the electrical control of spin information. Our work focuses primarily on a mechanism for multiferroicity in two-dimensional van der Waals materials that stems from an interplay between antiferromagnetism and the breaking of inversion symmetry in certain bilayers. We provide evidence for spin-electrical couplings that include manipulating van der Waals multiferroic edges via external voltages and the subsequent control of spin transport including for fully multiferroic spin field-effect transistors.
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Affiliation(s)
- Mario Castro
- Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
| | - Guidobeth Saéz
- Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
| | | | - Sebastián Allende
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
- Departamento de Física, Universidad de Santiago de Chile, Santiago, 9170124, Chile
| | - Alvaro S Nunez
- Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile
- Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile
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30
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Hou C, Shen Y, Wang Q, Yoshikawa A, Kawazoe Y, Jena P. In-Plane Sliding Ferroelectricity Realized in Penta-PdSe 2/Penta-PtSe 2 van der Waals Heterostructure. ACS NANO 2024; 18:16923-16933. [PMID: 38905522 DOI: 10.1021/acsnano.4c02994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/23/2024]
Abstract
Different from conventional 2D sliding ferroelectrics with polarization switchable in the out-of-plane via interlayer sliding, we show the existence of in-plane sliding ferroelectricity in a bilayer of a pentagon-based van der Waals heterostructure formed by vertically stacking an experimentally synthesized penta-PdSe2 sheet and a crystal lattice well-matched penta-PtSe2 sheet. From the 128 sliding patterns, four stable configurations are found that exhibit in-plane sliding ferroelectricity with an ultralow polarization switching barrier of 1.91 meV/atom and a high ferroelectric polarization of ±17.11 × 10-10 C m-1. Following the ferroelectric transition among the stable sliding configurations, significant changes in carrier mobility, electrical conductivity, and second harmonic generation are identified. In particular, the ferroelectric stacking configurations are found to possess a negative Poisson's ratio, facilitating the experimental characterization of the sliding ferroelectric effect. This study demonstrates that pentagonal sheets can be used to realize 2D in-plane sliding ferroelectrics going beyond the existing ones.
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Affiliation(s)
- Changsheng Hou
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Yiheng Shen
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Akira Yoshikawa
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8577, Japan
- Department of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - Puru Jena
- Department of Physics, Institute for Sustainable Energy and Environment, Virginia Commonwealth University, Richmond, Virginia 23284, United States
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31
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Cao W, Deb S, Stern MV, Raab N, Urbakh M, Hod O, Kronik L, Shalom MB. Polarization Saturation in Multilayered Interfacial Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400750. [PMID: 38662941 DOI: 10.1002/adma.202400750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/10/2024] [Indexed: 05/04/2024]
Abstract
Van der Waals polytypes of broken inversion and mirror symmetries have been recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization has been found to accumulate in a ladder-like fashion with each successive layer, offering 2D building blocks for the bottom-up construction of 3D ferroelectrics. Here, it is demonstrated experimentally that beyond a critical stack thickness, the accumulated polarization in rhombohedral polytypes of molybdenum disulfide saturates. The underlying saturation mechanism, deciphered via density functional theory and self-consistent Poisson-Schrödinger calculations, point to a purely electronic redistribution involving: 1. Polarization-induced bandgap closure that allows for cross-stack charge transfer and the emergence of free surface charge; 2. Reduction of the polarization saturation value, as well as the critical thickness at which it is obtained, by the presence of free carriers. The resilience of polar layered structures to atomic surface reconstruction, which is essentially unavoidable in polar 3D crystals, potentially allows for the design of new devices with mobile surface charges. The findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials.
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Affiliation(s)
- Wei Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Swarup Deb
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Maayan Vizner Stern
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Noam Raab
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Leeor Kronik
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth, 7610001, Israel
| | - Moshe Ben Shalom
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
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32
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Chen M, Xie Y, Cheng B, Yang Z, Li XZ, Chen F, Li Q, Xie J, Watanabe K, Taniguchi T, He WY, Wu M, Liang SJ, Miao F. Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing. NATURE NANOTECHNOLOGY 2024; 19:962-969. [PMID: 38965346 DOI: 10.1038/s41565-024-01698-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Accepted: 05/19/2024] [Indexed: 07/06/2024]
Abstract
Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for fault-tolerant computing technologies. However, the development of topological edge state-based computing devices remains a challenge. Here we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices, showcasing a proof-of-concept demonstration in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly aligned h-BN layers and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. The observed ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By tuning the amplitude of the gate voltage pulses, we achieve ferroelectric switching between any pair of Chern insulating states in the presence of a finite magnetic field, resulting in 1,280 ferroelectric states with distinguishable Hall resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of ferroelectric states. This unique switching capability enables the implementation of a convolutional neural network resistant to external noise, utilizing the quantized Hall conductance levels of the Chern insulator device as weights. Our study provides a promising avenue towards the development of topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials.
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Affiliation(s)
- Moyu Chen
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yongqin Xie
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, China.
| | - Zaizheng Yang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xin-Zhi Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Fanqiang Chen
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Qiao Li
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jiao Xie
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Wen-Yu He
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Menghao Wu
- School of Physics and School of Chemistry, Institute of Theoretical Chemistry, Huazhong University of Science and Technology, Wuhan, China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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33
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Guan Z, Zheng YZ, Tong WY, Zhong N, Cheng Y, Xiang PH, Huang R, Chen BB, Wei ZM, Chu JH, Duan CG. 2D Janus Polarization Functioned by Mechanical Force. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403929. [PMID: 38744294 DOI: 10.1002/adma.202403929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Revised: 04/26/2024] [Indexed: 05/16/2024]
Abstract
2D polarization materials have emerged as promising candidates for meeting the demands of device miniaturization, attributed to their unique electronic configurations and transport characteristics. Although the existing inherent and sliding mechanisms are increasingly investigated in recent years, strategies for inducing 2D polarization with innovative mechanisms remain rare. This study introduces a novel 2D Janus state by modulating the puckered structure. Combining scanning probe microscopy, transmission electron microscopy, and density functional theory calculations, this work realizes force-triggered out-of-plane and in-plane dipoles with distorted smaller warping in GeSe. The Janus state is preserved after removing the external mechanical perturbation, which could be switched by modulating the sliding direction. This work offers a versatile method to break the space inversion symmetry in a 2D system to trigger polarization in the atomic scale, which may open an innovative insight into configuring novel 2D polarization materials.
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Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Yun-Zhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Wen-Yi Tong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Zhong-Ming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jun-Hao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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34
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Liu Y, Wu Y, Duan R, Fu J, Ovesen M, Lai SCE, Yeo TE, Chee JY, Chen Y, Teo SL, Tan HR, Zhang W, Yang JKW, Thygesen KS, Liu Z, Zhang YW, Teng J. Linear Electro-Optic Effect in 2D Ferroelectric for Electrically Tunable Metalens. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401838. [PMID: 38748700 DOI: 10.1002/adma.202401838] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2024] [Revised: 04/29/2024] [Indexed: 05/23/2024]
Abstract
The advent of 2D ferroelectrics, characterized by their spontaneous polarization states in layer-by-layer domains without the limitation of a finite size effect, brings enormous promise for applications in integrated optoelectronic devices. Comparing with semiconductor/insulator devices, ferroelectric devices show natural advantages such as non-volatility, low energy consumption and high response speed. Several 2D ferroelectric materials have been reported, however, the device implementation particularly for optoelectronic application remains largely hypothetical. Here, the linear electro-optic effect in 2D ferroelectrics is discovered and electrically tunable 2D ferroelectric metalens is demonstrated. The linear electric-field modulation of light is verified in 2D ferroelectric CuInP2S6. The in-plane phase retardation can be continuously tuned by a transverse DC electric field, yielding an effective electro-optic coefficient rc of 20.28 pm V-1. The CuInP2S6 crystal exhibits birefringence with the fast axis oriented along its (010) plane. The 2D ferroelectric Fresnel metalens shows efficacious focusing ability with an electrical modulation efficiency of the focusing exceeding 34%. The theoretical analysis uncovers the origin of the birefringence and unveil its ultralow light absorption across a wide wavelength range in this non-excitonic system. The van der Waals ferroelectrics enable room-temperature electrical modulation of light and offer the freedom of heterogeneous integration with silicon and another material system for highly compact and tunable photonics and metaoptics.
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Affiliation(s)
- Yuanda Liu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Yaze Wu
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore
| | - Ruihuan Duan
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jichao Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Martin Ovesen
- CAMD, Department of Physics, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Samuel Chang En Lai
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Think-E Yeo
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Jing Yee Chee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Yunjie Chen
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Siew Lang Teo
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Hui Ru Tan
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
| | - Wang Zhang
- Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore
| | - Joel K W Yang
- Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore
| | | | - Zheng Liu
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Nanyang Technological University, Singapore, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yong-Wei Zhang
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Republic of Singapore
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35
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Wang E, Zeng H, Duan W, Huang H. Spontaneous Inversion Symmetry Breaking and Emergence of Berry Curvature and Orbital Magnetization in Topological ZrTe_{5} Films. PHYSICAL REVIEW LETTERS 2024; 132:266802. [PMID: 38996308 DOI: 10.1103/physrevlett.132.266802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/04/2024] [Accepted: 05/21/2024] [Indexed: 07/14/2024]
Abstract
ZrTe_{5} has recently attracted much attention due to the observation of intriguing nonreciprocal transport responses which necessitate the lack of inversion symmetry (I). However, there has been debate on the exact I-asymmetric structure and the underlying I-breaking mechanism. Here, we report a spontaneous I breaking in ZrTe_{5} films, which initiates from interlayer sliding and is stabilized by subtle intralayer distortion. Moreover, we predict significant nonlinear anomalous Hall effect (NAHE) and kinetic magnetoelectric effect (KME), which are attributed to the emergence of Berry curvature and orbital magnetization in the absence of I symmetry. We also explicitly manifest the direct coupling between sliding ferroelectricity, NAHE, and KME based on a sliding-dependent k·p model. By studying the subsurface sliding in ZrTe_{5} multilayers, we speculate that surface nonlinear Hall current and magnetization would emerge on the natural cleavage surface. Our findings elucidate the sliding-induced I-broken mechanism in ZrTe_{5} films and open new avenues for tuning nonreciprocal transport properties in Van der Waals layered materials.
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Affiliation(s)
| | | | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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36
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Bai C, Wu G, Yang J, Zeng J, Liu Y, Wang J. 2D materials-based photodetectors combined with ferroelectrics. NANOTECHNOLOGY 2024; 35:352001. [PMID: 38697050 DOI: 10.1088/1361-6528/ad4652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/01/2024] [Indexed: 05/04/2024]
Abstract
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
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Affiliation(s)
- Chongyang Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China
| | - Jinhua Zeng
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Yihan Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
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37
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Van Winkle M, Dowlatshahi N, Khaloo N, Iyer M, Craig IM, Dhall R, Taniguchi T, Watanabe K, Bediako DK. Engineering interfacial polarization switching in van der Waals multilayers. NATURE NANOTECHNOLOGY 2024; 19:751-757. [PMID: 38504024 DOI: 10.1038/s41565-024-01642-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Accepted: 02/29/2024] [Indexed: 03/21/2024]
Abstract
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here we show that deliberate interlayer rotations in multilayer van der Waals heterostructures modulate both the spatial ordering and switching dynamics of polar domains. The engendered tunability is unparalleled in conventional bulk ferroelectrics or polar bilayers. By means of operando transmission electron microscopy we show how alterations of the relative rotations of three WSe2 layers produce structural polytypes with distinct arrangements of polar domains with either a global or localized switching response. Furthermore, the presence of uniaxial strain generates structural anisotropy that yields a range of switching behaviours, coercivities and even tunable biased responses. We also provide evidence of mechanical coupling between the two interfaces of the trilayer, a key consideration for the control of switching dynamics in polar multilayer structures more broadly.
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Affiliation(s)
- Madeline Van Winkle
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikita Dowlatshahi
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikta Khaloo
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Mrinalni Iyer
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
- Department of Chemistry, University of Minnesota, Minneapolis, MN, USA
| | - Isaac M Craig
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Rohan Dhall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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38
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Xue H, Jin J, Tan Z, Chen K, Lu G, Zeng Y, Hu X, Peng X, Jiang L, Wu J. Flexible, biodegradable ultrasonic wireless electrotherapy device based on highly self-aligned piezoelectric biofilms. SCIENCE ADVANCES 2024; 10:eadn0260. [PMID: 38820150 PMCID: PMC11141629 DOI: 10.1126/sciadv.adn0260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Accepted: 04/29/2024] [Indexed: 06/02/2024]
Abstract
Biodegradable piezoelectric devices hold great promise in on-demand transient bioelectronics. Existing piezoelectric biomaterials, however, remain obstacles to the development of such devices due to difficulties in large-scale crystal orientation alignment and weak piezoelectricity. Here, we present a strategy for the synthesis of optimally orientated, self-aligned piezoelectric γ-glycine/polyvinyl alcohol (γ-glycine/PVA) films via an ultrasound-assisted process, guided by density functional theory. The first-principles calculations reveal that the negative piezoelectric effect of γ-glycine originates from the stretching and compression of glycine molecules induced by hydrogen bonding interactions. The synthetic γ-glycine/PVA films exhibit a piezoelectricity of 10.4 picocoulombs per newton and an ultrahigh piezoelectric voltage coefficient of 324 × 10-3 volt meters per newton. The biofilms are further developed into flexible, bioresorbable, wireless piezo-ultrasound electrotherapy devices, which are demonstrated to shorten wound healing by ~40% and self-degrade in preclinical wound models. These encouraging results offer reliable approaches for engineering piezoelectric biofilms and developing transient bioelectronics.
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Affiliation(s)
- Haoyue Xue
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Jing Jin
- Department of Biotherapy, Cancer Center, West China Hospital, Sichuan University, Chengdu 610041, China
| | - Zhi Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Keliang Chen
- Department of Biotherapy, Cancer Center, West China Hospital, Sichuan University, Chengdu 610041, China
| | - Gengxi Lu
- Alfred E. Mann Department of Biomedical Engineering, Viterbi School of Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Yushun Zeng
- Alfred E. Mann Department of Biomedical Engineering, Viterbi School of Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Xiaolin Hu
- West China School of Nursing, West China Hospital, Sichuan University, Chengdu 610041, China
| | - Xingchen Peng
- Department of Biotherapy, Cancer Center, West China Hospital, Sichuan University, Chengdu 610041, China
| | - Laiming Jiang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
| | - Jiagang Wu
- College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
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39
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Gao Y, Weston A, Enaldiev V, Li X, Wang W, Nunn JE, Soltero I, Castanon EG, Carl A, De Latour H, Summerfield A, Hamer M, Howarth J, Clark N, Wilson NR, Kretinin AV, Fal'ko VI, Gorbachev R. Tunnel junctions based on interfacial two dimensional ferroelectrics. Nat Commun 2024; 15:4449. [PMID: 38789446 PMCID: PMC11126694 DOI: 10.1038/s41467-024-48634-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 05/09/2024] [Indexed: 05/26/2024] Open
Abstract
Van der Waals heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral bilayers of transition metal dichalcogenides. Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunnelling junction devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials, and its understanding is an important milestone for the future development of optoelectronic devices based on sliding ferroelectricity.
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Affiliation(s)
- Yunze Gao
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Astrid Weston
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Vladimir Enaldiev
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Xiao Li
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Wendong Wang
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - James E Nunn
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Isaac Soltero
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Eli G Castanon
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Amy Carl
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Hugo De Latour
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Alex Summerfield
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Matthew Hamer
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - James Howarth
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Nicholas Clark
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Neil R Wilson
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Andrey V Kretinin
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- Department of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
| | - Vladimir I Fal'ko
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- Henry Royce Institute for Advanced Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
| | - Roman Gorbachev
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- Henry Royce Institute for Advanced Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
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40
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Zhang XW, Wang C, Liu X, Fan Y, Cao T, Xiao D. Polarization-driven band topology evolution in twisted MoTe 2 and WSe 2. Nat Commun 2024; 15:4223. [PMID: 38762554 PMCID: PMC11102499 DOI: 10.1038/s41467-024-48511-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Accepted: 05/02/2024] [Indexed: 05/20/2024] Open
Abstract
Motivated by recent experimental observations of opposite Chern numbers in R-type twisted MoTe2 and WSe2 homobilayers, we perform large-scale density-functional-theory calculations with machine learning force fields to investigate moiré band topology across a range of twist angles in both materials. We find that the Chern numbers of the moiré frontier bands change sign as a function of twist angle, and this change is driven by the competition between moiré ferroelectricity and piezoelectricity. Our large-scale calculations, enabled by machine learning methods, reveal crucial insights into interactions across different scales in twisted bilayer systems. The interplay between atomic-level relaxation effects and moiré-scale electrostatic potential variation opens new avenues for the design of intertwined topological and correlated states, including the possibility of mimicking higher Landau level physics in the absence of magnetic field.
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Affiliation(s)
- Xiao-Wei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Chong Wang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Xiaoyu Liu
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Yueyao Fan
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA.
| | - Di Xiao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA.
- Department of Physics, University of Washington, Seattle, WA, 98195, USA.
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41
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Cheng D, Liu J, Wei B. Growth of Quasi-Two-Dimensional CrTe Nanoflakes and CrTe/Transition Metal Dichalcogenide Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:868. [PMID: 38786824 PMCID: PMC11123775 DOI: 10.3390/nano14100868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 05/09/2024] [Accepted: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe2 and CrTe/MoS2 heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface's structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal-semiconductor CrTe/TMDC heterostructure.
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Affiliation(s)
| | | | - Bin Wei
- School of Materials, Sun Yat-sen University, Shenzhen 518107, China; (D.C.); (J.L.)
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42
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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43
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Zhou BT, Pathak V, Franz M. Quantum-Geometric Origin of Out-of-Plane Stacking Ferroelectricity. PHYSICAL REVIEW LETTERS 2024; 132:196801. [PMID: 38804928 DOI: 10.1103/physrevlett.132.196801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 11/16/2023] [Accepted: 04/10/2024] [Indexed: 05/29/2024]
Abstract
Stacking ferroelectricity (SFE) has been discovered in a wide range of van der Waals materials and holds promise for applications, including photovoltaics and high-density memory devices. We show that the microscopic origin of out-of-plane stacking ferroelectric polarization can be generally understood as a consequence of a nontrivial Berry phase borne out of an effective Su-Schrieffer-Heeger model description with broken sublattice symmetry, thus elucidating the quantum-geometric origin of polarization in the extremely nonperiodic bilayer limit. Our theory applies to known stacking ferroelectrics such as bilayer transition-metal dichalcogenides in 3R and T_{d} phases, as well as general AB-stacked honeycomb bilayers with staggered sublattice potential. Our explanatory and self-consistent framework based on the quantum-geometric perspective establishes quantitative understanding of out-of-plane SFE materials beyond symmetry principles.
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Affiliation(s)
- Benjamin T Zhou
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Vedangi Pathak
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Marcel Franz
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
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44
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Liang Y, Sun H, Li X, Zhu L, Bi M, Du Z, Huang C, Wu F. Multiferroicity driven by single-atom adsorption on the two-dimensional semiconductor ScCl 3. Phys Chem Chem Phys 2024; 26:14062-14070. [PMID: 38686605 DOI: 10.1039/d4cp00863d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
In recent years, two-dimensional (2D) transition metal halides (such as CrI3) have received more and more attention for the practical applications of spintronic devices due to their unique electronic and magnetic properties. However, most 2D transition metal halides are centrosymmetric and are non-polar, which hinders their applications on nonvolatile memories. Here, on the basis of first-principles calculations, we predict that the adsorption of K single-atoms on the ScCl3 monolayer (denoted as K@ScCl3) could break the structural centrosymmetry and induce a reversible large out-of-plane electric polarization. Simultaneously, the adsorption of K single-atoms induces a magnetic moment localized on Sc ions, which forms a ferromagnetic order with an estimated Curie temperature of ∼37 K. These make the K@ScCl3 monolayer a ferromagnetic ferroelectric semiconductor. These findings propose a new route to realize 2D multiferroic materials, which is of great significance for the research and development of spintronics.
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Affiliation(s)
- Yu Liang
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Huasheng Sun
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Xiang Li
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Leichuang Zhu
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Menghao Bi
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Zhengxiao Du
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Chengxi Huang
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China.
| | - Fang Wu
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
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45
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Sui F, Li H, Qi R, Jin M, Lv Z, Wu M, Liu X, Zheng Y, Liu B, Ge R, Wu YN, Huang R, Yue F, Chu J, Duan C. Atomic-level polarization reversal in sliding ferroelectric semiconductors. Nat Commun 2024; 15:3799. [PMID: 38714769 PMCID: PMC11076638 DOI: 10.1038/s41467-024-48218-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Accepted: 04/24/2024] [Indexed: 05/10/2024] Open
Abstract
Intriguing "slidetronics" has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.
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Affiliation(s)
- Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Haoyang Li
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Min Jin
- College of Materials, Shanghai Dianji University, Shanghai, 201306, China.
| | - Zhiwei Lv
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xuechao Liu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yufan Zheng
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Beituo Liu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Rui Ge
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Yu-Ning Wu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China.
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
- National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China
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46
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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47
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Wang L, Qi J, Wei W, Wu M, Zhang Z, Li X, Sun H, Guo Q, Cao M, Wang Q, Zhao C, Sheng Y, Liu Z, Liu C, Wu M, Xu Z, Wang W, Hong H, Gao P, Wu M, Wang ZJ, Xu X, Wang E, Ding F, Zheng X, Liu K, Bai X. Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal. Nature 2024; 629:74-79. [PMID: 38693415 DOI: 10.1038/s41586-024-07286-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 03/08/2024] [Indexed: 05/03/2024]
Abstract
Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1-4-including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds-but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5-23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24-26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron-nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.
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Affiliation(s)
- Li Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Wenya Wei
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Mengqi Wu
- School of Engineering, Westlake University, Hangzhou, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xiaomin Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Huacong Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Meng Cao
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Chao Zhao
- Shenzhen Institute of Advanced Technology, Shenzhen, China
| | - Yuxuan Sheng
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhetong Liu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Zhi Xu
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Wenlong Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhu-Jun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Xiaozhi Xu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Enge Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Tsientang Institute for Advanced Study, Hangzhou, China
| | - Feng Ding
- Shenzhen Institute of Advanced Technology, Shenzhen, China.
| | - Xiaorui Zheng
- School of Engineering, Westlake University, Hangzhou, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
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Wang Y, Li Z, Luo X, Gao J, Han Y, Jiang J, Tang J, Ju H, Li T, Lv R, Cui S, Yang Y, Sun Y, Zhu J, Gao X, Lu W, Sun Z, Xu H, Xiong Y, Cao L. Dualistic insulator states in 1T-TaS 2 crystals. Nat Commun 2024; 15:3425. [PMID: 38653984 DOI: 10.1038/s41467-024-47728-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 04/09/2024] [Indexed: 04/25/2024] Open
Abstract
While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a "three-dimensional" control for the era of slidetronics.
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Affiliation(s)
- Yihao Wang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Zhihao Li
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yuyan Han
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jialiang Jiang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jin Tang
- Department of Physics, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Huanxin Ju
- PHI Analytical Laboratory, ULVAC-PHI Instruments Co., Ltd., Nanjing, 211110, Jiangsu, P. R. China
| | - Tongrui Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Run Lv
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Shengtao Cui
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yingguo Yang
- State Key Laboratory of Photovoltaic Science and Technology, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yuping Sun
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Junfa Zhu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Laboratory, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, P. R. China
| | - Wenjian Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
- Hefei National Laboratory, Hefei, 230028, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
| | - Yimin Xiong
- Department of Physics, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, P. R. China.
- Hefei National Laboratory, Hefei, 230028, P. R. China.
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
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49
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Kim H, Kim C, Jung Y, Kim N, Son J, Lee GH. In-plane anisotropic two-dimensional materials for twistronics. NANOTECHNOLOGY 2024; 35:262501. [PMID: 38387091 DOI: 10.1088/1361-6528/ad2c53] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 02/22/2024] [Indexed: 02/24/2024]
Abstract
In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
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Affiliation(s)
- Hangyel Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Changheon Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, United States of America
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, United States of America
| | - Namwon Kim
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
- Ingram School of Engineering, Texas State University, San Marcos, TX 78666, United States of America
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, United States of America
| | - Jangyup Son
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54895, Republic of Korea
- Division of Nano and Information Technology, KIST School University of Science and Technology(UST), Jeonbuk 55324, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
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50
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Hu Q, Huang Y, Wang Y, Ding S, Zhang M, Hua C, Li L, Xu X, Yang J, Yuan S, Watanabe K, Taniguchi T, Lu Y, Jin C, Wang D, Zheng Y. Ferrielectricity controlled widely-tunable magnetoelectric coupling in van der Waals multiferroics. Nat Commun 2024; 15:3029. [PMID: 38589456 PMCID: PMC11001967 DOI: 10.1038/s41467-024-47373-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 03/27/2024] [Indexed: 04/10/2024] Open
Abstract
The discovery of various primary ferroic phases in atomically-thin van der Waals crystals have created a new two-dimensional wonderland for exploring and manipulating exotic quantum phases. It may also bring technical breakthroughs in device applications, as evident by prototypical functionalities of giant tunneling magnetoresistance, gate-tunable ferromagnetism and non-volatile ferroelectric memory etc. However, two-dimensional multiferroics with effective magnetoelectric coupling, which ultimately decides the future of multiferroic-based information technology, has not been realized yet. Here, we show that an unconventional magnetoelectric coupling mechanism interlocked with heterogeneous ferrielectric transitions emerges at the two-dimensional limit in van der Waals multiferroic CuCrP2S6 with inherent antiferromagnetism and antiferroelectricity. Distinct from the homogeneous antiferroelectric bulk, thin-layer CuCrP2S6 under external electric field makes layer-dependent heterogeneous ferrielectric transitions, minimizing the depolarization effect introduced by the rearrangements of Cu+ ions within the ferromagnetic van der Waals cages of CrS6 and P2S6 octahedrons. The resulting ferrielectric phases are characterized by substantially reduced interlayer magnetic coupling energy of nearly 50% with a moderate electric field of 0.3 V nm-1, producing widely-tunable magnetoelectric coupling which can be further engineered by asymmetrical electrode work functions.
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Affiliation(s)
- Qifeng Hu
- School of Physics, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Yuqiang Huang
- School of Physics, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Yang Wang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Sujuan Ding
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Minjie Zhang
- School of Physics, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Chenqiang Hua
- School of Physics, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China
| | - Linjun Li
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
| | - Xiangfan Xu
- School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Shengjun Yuan
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Yunhao Lu
- School of Physics, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.
| | - Chuanhong Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.
| | - Dawei Wang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Yi Zheng
- School of Physics, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.
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