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Hu G, Guo H, Lv S, Li L, Wang Y, Han Y, Pan L, Xie Y, Yu W, Zhu K, Qi Q, Xian G, Zhu S, Shi J, Bao L, Lin X, Zhou W, Yang H, Gao HJ. Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe 3GaTe 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403154. [PMID: 38631700 DOI: 10.1002/adma.202403154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Revised: 04/08/2024] [Indexed: 04/19/2024]
Abstract
Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe3GaTe2 (c-Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe3GaTe2.
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Affiliation(s)
- Guojing Hu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hui Guo
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Senhao Lv
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Linxuan Li
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunhao Wang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yechao Han
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lulu Pan
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yulan Xie
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Weiqi Yu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ke Zhu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Qi
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guoyu Xian
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shiyu Zhu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinan Shi
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lihong Bao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiao Lin
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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Ortiz Jimenez V, Pham YTH, Zhou D, Liu M, Nugera FA, Kalappattil V, Eggers T, Hoang K, Duong DL, Terrones M, Rodriguez Gutiérrez H, Phan M. Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2304792. [PMID: 38072638 PMCID: PMC10870067 DOI: 10.1002/advs.202304792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 11/04/2023] [Indexed: 02/17/2024]
Abstract
The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.
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Affiliation(s)
- Valery Ortiz Jimenez
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
- Nanoscale Device Characterization DivisionNational Institute of Standards and TechnologyGaithersburgMD20899USA
| | | | - Da Zhou
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Mingzu Liu
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | | | - Tatiana Eggers
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Khang Hoang
- Center for Computationally Assisted Science and Technology and Department of PhysicsNorth Dakota State UniversityFargoND58108USA
| | - Dinh Loc Duong
- Department of PhysicsMontana State UniversityBozemanMT59717USA
| | - Mauricio Terrones
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | | | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
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3
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Guillet T, Galceran R, Sierra JF, Belarre FJ, Ballesteros B, Costache MV, Dosenovic D, Okuno H, Marty A, Jamet M, Bonell F, Valenzuela SO. Spin-Orbit Torques and Magnetization Switching in (Bi,Sb) 2Te 3/Fe 3GeTe 2 Heterostructures Grown by Molecular Beam Epitaxy. NANO LETTERS 2024; 24:822-828. [PMID: 38263950 DOI: 10.1021/acs.nanolett.3c03291] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb)2Te3 with 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of Jc ∼ 1010 A/m2, with minimal device-to-device variations compared to previous investigations involving traditional FMs.
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Affiliation(s)
- Thomas Guillet
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Regina Galceran
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Juan F Sierra
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Francisco J Belarre
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Belén Ballesteros
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Marius V Costache
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | | | - Hanako Okuno
- Univ. Grenoble Alpes, CEA, IRIG-MEM, 38000 Grenoble, France
| | - Alain Marty
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
| | - Matthieu Jamet
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
| | - Frédéric Bonell
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), 08070 Barcelona, Spain
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Sun JL, Dong MM, Niu Y, Li ZL, Zhang GP, Wang CK, Fu XX. Regulating the electronic properties of the WGe 2N 4 monolayer by adsorption of 4d transition metal atoms towards spintronic devices. Phys Chem Chem Phys 2023; 25:26270-26277. [PMID: 37743842 DOI: 10.1039/d3cp02686h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/26/2023]
Abstract
We study the regulation of the electronic and spin transport properties of the WGe2N4 monolayer by adsorbing 4d transition metal atoms (Y-Cd) using density functional theory combined with non-equilibrium Green's function. It is found that the adsorption of transition metal atoms (except Pd, Ag and Cd atoms) can introduce a magnetic moment into the WGe2N4 monolayer. Among the transition metal atoms, the adsorption of Nb and Rh atoms transforms WGe2N4 from a semiconductor to a half-metal and a highly spin-polarized semiconductor, respectively. The half-metallic Nb-adsorbed WGe2N4 system is selected to investigate the spin transport properties, and a high magnetoresistance ratio of 107% is achieved. In both parallel and antiparallel magnetization configurations, the spin filtering efficiency reaches close to 100% in the whole bias range, and the antiparallel magnetization configuration exhibits a dual spin filtering effect with a rectification ratio of up to 104. Our study predicts that the adsorption of 4d transition metal heteroatoms is an effective method to regulate the electronic and magnetic properties of WGe2N4 towards high-performance spintronic devices.
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Affiliation(s)
- Jin-Lan Sun
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Mi-Mi Dong
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Yue Niu
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Zong-Liang Li
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Guang-Ping Zhang
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Chuan-Kui Wang
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
| | - Xiao-Xiao Fu
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
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Kumari P, Rani S, Kar S, Kamalakar MV, Ray SJ. Strain-controlled spin transport in a two-dimensional (2D) nanomagnet. Sci Rep 2023; 13:16599. [PMID: 37789039 PMCID: PMC10547692 DOI: 10.1038/s41598-023-43025-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/18/2023] [Indexed: 10/05/2023] Open
Abstract
Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Ghising P, Biswas C, Lee YH. Graphene Spin Valves for Spin Logic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209137. [PMID: 36618004 DOI: 10.1002/adma.202209137] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2022] [Revised: 11/23/2022] [Indexed: 06/09/2023]
Abstract
An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge-based FETs is compared to highlight their prospects for low-power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.
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Affiliation(s)
- Pramod Ghising
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Chandan Biswas
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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Wang Z, Zheng Y, Chen J, Wang Y, Liang Y, Li X, Wu F. Room-temperature half-metals induced via chemical surface modification: 2D Mn 2Se 2 monolayer. Phys Chem Chem Phys 2023; 25:14294-14302. [PMID: 37183440 DOI: 10.1039/d3cp00922j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Compared with various antiferromagnetic (AFM) materials, two-dimensional (2D) room-temperature ferromagnetic (FM) materials are rarely discovered because of the geometrically determined spin interactions. Since 2D FM materials have shown great potential in the next-generational information devices, it is quite important to design new FM materials based on the reported AFM materials. Here, in this study, we found that the Mn2Se2 monolayer can be converted to half-metal from AFM semiconductor at room temperature by edge modification of certain chemical groups (such as -Cl, -Br, -I, and -S) based on systematical first-principles calculations. Our results show that the adsorbed chemical groups significantly modify the electronic states of Mn ions and the resulting spin interactions. Moreover, our results indicate that the Curie temperatures (Tc) of some Mn2Se2 monolayer derivatives approach or even exceed room temperature, among which Curie temperatures after chemical modification by -Cl, -Br, -I, -S are 290 K, 320 K, 400 K, and 1050 K, respectively. Thus, chemical modifications can be one of the effective methods to construct 2D FM materials in experiments.
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Affiliation(s)
- Zhe Wang
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Yanqiu Zheng
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Ji Chen
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Yun Wang
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Yu Liang
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Xiang Li
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Fang Wu
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
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Barik RK, Woods LM. High throughput calculations for a dataset of bilayer materials. Sci Data 2023; 10:232. [PMID: 37085503 PMCID: PMC10121719 DOI: 10.1038/s41597-023-02146-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 04/11/2023] [Indexed: 04/23/2023] Open
Abstract
Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.
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Affiliation(s)
- Ranjan Kumar Barik
- Department of Physics, University of South Florida, Tampa, Florida, 33620, USA.
| | - Lilia M Woods
- Department of Physics, University of South Florida, Tampa, Florida, 33620, USA.
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Li C, Li M, Li Y, He T, Liu Y, Zhang X, Dai X, Liu G. Two-dimensional half-metallicity and fully spin-polarized topological fermions in monolayer EuOBr. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:264002. [PMID: 36990099 DOI: 10.1088/1361-648x/acc8b2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Accepted: 03/29/2023] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) half-metal and topological states have been the current research focus in condensed matter physics. Herein, we report a novel 2D material named EuOBr monolayer, which can simultaneously show 2D half-metal and topological fermions. This material shows a metallic state in the spin-up channel but a large insulating gap of 4.38 eV in the spin-down channel. In the conducting spin channel, the EuOBr monolayer shows the coexistence of Weyl points and nodal-lines near the Fermi level. These nodal-lines are classified by type-I, hybrid, closed, and open nodal-lines. The symmetry analysis suggests these nodal-lines are protected by the mirror symmetry, which cannot be broken even spin-orbit coupling is included because the ground magnetization direction in the material is out-of-plane [001]. The topological fermions in the EuOBr monolayer are fully spin-polarized, which can be meaningful for future applications in topological spintronic nano-devices.
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Affiliation(s)
- Chenyao Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Minghang Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Yefeng Li
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Tingli He
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Xuefang Dai
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, People's Republic of China
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, People's Republic of China
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Pawar S, Duadi H, Fixler D. Recent Advances in the Spintronic Application of Carbon-Based Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:598. [PMID: 36770559 PMCID: PMC9919822 DOI: 10.3390/nano13030598] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 01/29/2023] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
The term "carbon-based spintronics" mostly refers to the spin applications in carbon materials such as graphene, fullerene, carbon nitride, and carbon nanotubes. Carbon-based spintronics and their devices have undergone extraordinary development recently. The causes of spin relaxation and the characteristics of spin transport in carbon materials, namely for graphene and carbon nanotubes, have been the subject of several theoretical and experimental studies. This article gives a summary of the present state of research and technological advancements for spintronic applications in carbon-based materials. We discuss the benefits and challenges of several spin-enabled, carbon-based applications. The advantages include the fact that they are significantly less volatile than charge-based electronics. The challenge is in being able to scale up to mass production.
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Affiliation(s)
- Shweta Pawar
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
- Bar-Ilan Institute of Nanotechnology & Advanced Materials (BINA), Bar Ilan University, Ramat Gan 5290002, Israel
| | - Hamootal Duadi
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
| | - Dror Fixler
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
- Bar-Ilan Institute of Nanotechnology & Advanced Materials (BINA), Bar Ilan University, Ramat Gan 5290002, Israel
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11
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Gogoi L, Gao W, Ajayan PM, Deb P. Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials. Phys Chem Chem Phys 2023; 25:1430-1456. [PMID: 36601788 DOI: 10.1039/d2cp05228h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.
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Affiliation(s)
- Liyenda Gogoi
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Pulickel M Ajayan
- Benjamin M. and Mary Greenwood Anderson Professor of Engineering, Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
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12
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Le Thi HY, Ngo TD, Phan NAN, Yoo WJ, Watanabe K, Taniguchi T, Aoki N, Bird JP, Kim GH. Self-Forming p-n Junction Diode Realized with WSe 2 Surface and Edge Dual Contacts. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204547. [PMID: 36216594 DOI: 10.1002/smll.202204547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2022] [Revised: 09/08/2022] [Indexed: 06/16/2023]
Abstract
Owing to their practical applications, two-dimensional semiconductor p-n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p-n junction diode is formed in tungsten diselenide (WSe2 ) using a combination of edge and surface contacts. The appearance of amorphous tungsten oxide at etched WSe2 , and the formation of a junction near the edge contact, are verified by high-resolution transmission electron microscopy. The device demonstrates high on/off ratio for both the edge and surface contacts, with respective values of 107 and 108 . The diode can achieve extremely high mobility of up to 168 cm2 V-1 s-1 and a rectification ratio of 103 . The ideality factor is 1.11 at a back gate voltage VG = 60 V at 300 K. The devices with encapsulation of hexagonal boron nitride exhibit good stability to atmospheric exposure, over a measured period of 2 months. In addition, the architecture of the contacts, which is based on a single-channel device, should be advantageous for the implementation of more complicated applications such as inverters, photodetectors, and light-emitting diodes.
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Affiliation(s)
- Hai Yen Le Thi
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Tien Dat Ngo
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Nhat Anh Nguyen Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Won Jong Yoo
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Material Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba, 263-8522, Japan
| | - Jonathan P Bird
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA
| | - Gil-Ho Kim
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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13
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Firouzeh S, Rahman MW, Pramanik S. Thermally-driven large current-perpendicular-to-plane magnetoresistance in ultrathin flakes of vanadium diselenide. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:495802. [PMID: 36240752 DOI: 10.1088/1361-648x/ac9a94] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 10/14/2022] [Indexed: 06/16/2023]
Abstract
Current-perpendicular-to-plane magnetoresistance (CPP MR) in layered heterojunctions is at the heart of modern magnetic field sensing and data storage technologies. van der waals heterostructures and two-dimensional (2D) magnets opened a new playground for exploring this effect, although most 2D magnets exhibit large CPP MR only at very low temperatures due to their very low Curie temperatures. vanadium diselenide (VSe2) is a promising material since its monolayers can potentially act as room temperature ferromagnets. VSe2multilayers have been predicted to exhibit CPP MR effects, although experimental work in this area remains scarce. In this work we investigate CPP MR in 1T-VSe2ultrathin flakes, revealing alarge (∼60%-70%), positive, linear, and non saturating CPP MR, which persists close to room temperature (∼250 K), in a relatively small magnetic field range of ±12 kG. The CPP MR has been found to increase with decreasing flake thickness. The CPP MR originates due to the intrinsic inhomogeneity in the CPP transport path, andexhibits unprecedented immunity against thermal fluctuations, leading to increasingly enhanced MR as temperature is increased, even significantly beyond the charge density wave transition temperature. The observed 'thermally-driven' MR features are remarkably robust and reproducible, and can offer a viable route for developing practical room temperature 2D based magnetic sensor technologies. Our results also suggest that harnessing similar effects in other 2D systems could result in large MR as well, thereby motivating further research on CPP transport in these systems, which has been relatively unexplored so far.
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Affiliation(s)
- Seyedamin Firouzeh
- Electrical and Computer Engineering, University of Alberta, Room- W3-075, ECERF Building, Edmonton, Alberta T6G 2R3, Canada
| | - Md Wazedur Rahman
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 1H9, Canada
| | - Sandipan Pramanik
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta T6G 1H9, Canada
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Das S, Kabiraj A, Mahapatra S. Room temperature giant magnetoresistance in half-metallic Cr 2C based two-dimensional tunnel junctions. NANOSCALE 2022; 14:9409-9418. [PMID: 35730762 DOI: 10.1039/d2nr02056d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) magnetic materials inherit enormous potential to revolutionize next-generation spintronic technology. The majority of prior investigations using 2D ferromagnet-based tunnel junctions have shown encouraging tunnel magnetoresistance (TMR) at low temperatures. Using first-principles-based calculations, here we investigate the magnetic properties of commercially available Cr2C crystals at their monolayer limit and reveal their half metallicity properties far beyond room temperature. We then design hetero-multilayer structures combining Cr2C with graphene and hexagonal boron nitride (h-BN) and report their magnetoresistance using spin-polarized quantum transport calculations. While graphene based devices, adsorbed on the metal contact, reveal a very high TMR (1200%), it can be further increased to 1500% by changing the barrier layer to h-BN. The dependence of TMR on the number of barrier layers and different metallic electrode materials (Ti, Ag, and Au) are also studied. Our investigation suggests that Cr2C based spin valves can serve as the perfect building blocks for room temperature all-2D spintronic devices.
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Affiliation(s)
- Shreeja Das
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc), Bangalore, Bangalore 560012, India.
| | - Arnab Kabiraj
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc), Bangalore, Bangalore 560012, India.
| | - Santanu Mahapatra
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc), Bangalore, Bangalore 560012, India.
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15
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Rizzo DJ, McLeod AS, Carnahan C, Telford EJ, Dismukes AH, Wiscons RA, Dong Y, Nuckolls C, Dean CR, Pasupathy AN, Roy X, Xiao D, Basov DN. Visualizing Atomically Layered Magnetism in CrSBr. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201000. [PMID: 35504841 DOI: 10.1002/adma.202201000] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2022] [Revised: 04/22/2022] [Indexed: 06/14/2023]
Abstract
2D materials can host long-range magnetic order in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity (i.e., strain) on the emergence of stable magnetic phases. Here, spatially dependent magnetism in few-layer CrSBr is revealed using magnetic force microscopy (MFM) and Monte Carlo-based simulations. Nanoscale visualization of the magnetic sheet susceptibility is extracted from MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. These results demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature (TN ). Furthermore, the AFM phase can be reliably suppressed using modest fields (≈16 mT) from the MFM probe, behaving as a nanoscale magnetic switch. This prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and validates MFM for use in nanomagnetometry of 2D materials (despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets).
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Affiliation(s)
- Daniel J Rizzo
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | | | - Caitlin Carnahan
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Evan J Telford
- Department of Physics, Columbia University, New York, NY, 10027, USA
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Ren A Wiscons
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Yinan Dong
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Colin Nuckolls
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Cory R Dean
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Di Xiao
- Department of Material Science and Engineering, University of Washington, Seattle, WA, 98195, USA
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - D N Basov
- Department of Physics, Columbia University, New York, NY, 10027, USA
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Yu S, Tang J, Wang Y, Xu F, Li X, Wang X. Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural- and electric field-engineering toward spintronic applications. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:140-160. [PMID: 35185390 PMCID: PMC8856075 DOI: 10.1080/14686996.2022.2030652] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 01/03/2022] [Accepted: 01/09/2022] [Indexed: 05/27/2023]
Abstract
Since the first report on truly two-dimensional (2D) magnetic materials in 2017, a wide variety of merging 2D magnetic materials with unusual physical characteristics have been discovered and thus provide an effective platform for exploring the associated novel 2D spintronic devices, which have been made significant progress in both theoretical and experimental studies. Herein, we make a comprehensive review on the recent scientific endeavors and advances on the various engineering strategies on 2D ferromagnets, such as strain-, doping-, structural- and electric field-engineering, toward practical spintronic applications, including spin tunneling junctions, spin field-effect transistors and spin logic gate, etc. In the last, we discuss on current challenges and future opportunities in this field, which may provide useful guidelines for scientists who are exploring the fundamental physical properties and practical spintronic devices of low-dimensional magnets.
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Affiliation(s)
- Sheng Yu
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, China
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Junyu Tang
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Yu Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Feixiang Xu
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Xiaoguang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Xinzhong Wang
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, China
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17
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Rahman S, Torres JF, Khan AR, Lu Y. Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation. ACS NANO 2021; 15:17175-17213. [PMID: 34779616 DOI: 10.1021/acsnano.1c06864] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Juan F Torres
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), ANU node, Canberra, ACT 2601, Australia
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18
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Zhang R, Marrazzo A, Verstraete MJ, Marzari N, Sohier TDP. Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO. NANO LETTERS 2021; 21:7631-7636. [PMID: 34460271 DOI: 10.1021/acs.nanolett.1c02322] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.
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Affiliation(s)
- Rong Zhang
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Antimo Marrazzo
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- Dipartimento di Fisica, Università di Trieste, Strada Costiera 11, 34151 Trieste, Italy
| | - Matthieu Jean Verstraete
- Nanomat/QMAT/CESAM and European Theoretical Spectroscopy Facility, University of Liège, Allée du 6 Août 19 (B5a), 4000 Liège, Belgium
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Thibault Daniel Pierre Sohier
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- Nanomat/QMAT/CESAM and European Theoretical Spectroscopy Facility, University of Liège, Allée du 6 Août 19 (B5a), 4000 Liège, Belgium
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Wang G, Qin W, Wang S, Teketel BS, Yu W, Luo T, Xu B, Lin B. CrI 3/Y 2CH 2 Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI 3 Monolayer Ferromagnets. ACS APPLIED MATERIALS & INTERFACES 2021; 13:16694-16703. [PMID: 33818069 DOI: 10.1021/acsami.1c01768] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) CrI3 monolayer ferromagnets are key to the development of future miniature spintronic devices and modulating them into a half-metal will greatly expand the application scenarios of CrI3 in nanospintronics. Nevertheless, existing strategies to induce half-metallicity of a CrI3 monolayer remain experimentally challenging and have unstable issues. In this work, the introduction of a 2D electride [Y2C]2+·2e- as an auxiliary layer is shown to be an effective way to achieve the generation of stable half-metallicity in the CrI3 monolayer. When the fully hydrogenated Y2CH2 and ferromagnetic CrI3 monolayer combine to form a heterostructure, surprisingly the appropriate amount of charge injection (0.72 e) turns CrI3 into a half-metal. Hetero-interfacial half-metallicity in CrI3 is an intrinsic one and does not require any chemical functionalization or external physical modification. Therefore, it is advantageous for practical applications of CrI3 in miniature spintronic devices, such as magnetic tunnel junctions, spin valves or spin field-effect transistors. A new strategy of the stable CrI3/Y2CH2 heterostructure was successfully developed to induce the half-metallicity of 2D CrI3 ferromagnets, which is experimentally feasible and half-metallic stable enough. This work paves the way for the application of the CrI3 monolayer in half-metallic-based spintronics.
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Affiliation(s)
- Guoqing Wang
- Institute of Fundamental and Frontier Sciences & School of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wenjing Qin
- Department of Physics, Laboratory of Computational Materials Physics, Jiangxi Normal University, Nanchang 330022, China
| | - Siyuan Wang
- Institute of Fundamental and Frontier Sciences & School of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Birkneh Sirak Teketel
- Institute of Fundamental and Frontier Sciences & School of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Weili Yu
- The Guo Photonics Laboratory, Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Science (CAS), Changchun 130033 China
| | - Tianyong Luo
- Institute of Fundamental and Frontier Sciences & School of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Bo Xu
- Department of Physics, Laboratory of Computational Materials Physics, Jiangxi Normal University, Nanchang 330022, China
| | - Bin Lin
- Institute of Fundamental and Frontier Sciences & School of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
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