A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

Protocol for nanoscale thermal mapping of electronic devices using atomic force microscopy with phase change material

In this protocol, we present a facile nanoscale thermal mapping technique for electronic devices by use of atomic force microscopy and a phase change material Ge2Sb2Te5. We describe steps for Ge2Sb2Te5 thin film coating, Ge2Sb2Te5 temperature calibration, thermal mapping by varying heater power, and thermal mapping by varying heating time. The protocol can be applied for resolving surface temperatures of various operational microelectronic devices with a nanoscale precision. For complete details on the use and execution of this protocol, please refer to Cheng et al.1.

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon

This work presents the design and multiphysics simulation of a cylindrical waveguide-based optical switch using germanium-antimony-tellurium (GST) as an active phase change material. The innovative cylindrical architecture is theoretically analyzed and evaluated at 1550 nm wavelength for telecommunication applications. The dispersion relation is derived analytically for the first time to model the optical switch, while finite element method (FEM) and finite difference time domain (FDTD) techniques are utilized to simulate the optical modes, light propagation, and phase change dynamics. The fundamental TE01 and HE11 modes are studied in detail, enabling switching between low-loss amorphous and high-loss crystalline GST phases. Increasing the GST thickness is found to increase absorption loss in the crystalline state but also slows down phase transition kinetics, reducing switching speeds. A 10 nm GST layer results in competitive performance metrics of 0.79 dB insertion loss, 13.47 dB extinction ratio, 30 nJ average power consumption, and 3.5 Mb/s bit rate. The combined optical, thermal, and electrical simulation provides comprehensive insights towards developing integrated non-volatile photonic switches and modulators utilizing phase change materials.

Gold(I)-Thiolate Coordination Polymers as Multifunctional Materials: The Case of Au(I)-p-Fluorothiophenolate

Gold-sulfur interaction has vital importance in nanotechnologies and material chemistry to design functional nanoparticles, self-assembled monolayers, or molecular complexes. In this paper, a mixture of only two basic precursors, such as the chloroauric acid (HAu(III)Cl4) and a thiol molecule (p-fluorothiophenol (p-HSPhF)), are used for the synthesis of gold(I)-thiolate coordination polymers. Under different conditions of synthesis and external stimuli, five different functional materials with different states of [Au(I)(p-SPhF)]n can be afforded. These gold-thiolate compounds are (i) red emissive, flexible, and crystalline fibers; (ii) composite materials made of these red emissive fibers and gold nanoparticles; (iii) amorphous phase; (iv) transparent glass; and (v) amorphous-to-crystalline phase-change material associated with an ON/OFF switch of luminescence. The different functionalities of these materials highlight the great versatility of the gold(I) thiolate coordination polymers with easy synthesis and diverse shaping that may have great potential as sustainable phosphors, smart textiles, sensors, and phase change memories.

Laser Dynamic Control of the Thermal Emissivity of a Planar Cavity Structure Based on a Phase-Change Material

Tailoring the thermal emission of a material in the long-wave infrared (IR) range of 8-13 μm is crucial for many IR-adaptive applications, including personal thermal management, IR camouflage, and radiative cooling. Although various materials and surface structures have been proposed for these purposes, space-selective and dynamic control of their emissivity is challenging. In this study, we present a planar surface cavity structure consisting of a Ge2Sb2Te5 (GST) film on top of a thin metal reflector to modulate its emissivity by using an ultraviolet laser beam. A laser-induced phase change in GST allowed for the local control of emissivity. The average emissivity in the long-wave IR range was tunable from 0.15 to 0.77 simply by changing the laser energy deposited on the GST film. This enabled the laser printing of high-contrast emissivity patterns, which were erasable by subsequent thermal annealing. Emissivity-modulated GST cavities could be fabricated on not only rigid substrates but also flexible plastic substrates such as polyimide. The GST surface cavity was highly flexible and remained stable upon repeated bending to a curvature radius of 0.5 cm. This study provides a promising route for realizing scalable and flexible thermal emitters with tunable surface emissivity.

Roadmap for phase change materials in photonics and beyond

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Recent developments in Chalcogenide phase change material-based nanophotonics

There is now a deep interest in actively reconfigurable nanophotonics as they will enable the next generation of optical devices. Of the various alternatives being explored for reconfigurable nanophotonics, Chalcogenide phase change materials (PCMs) are considered highly promising owing to the nonvolatile nature of their phase change. Chalcogenide PCM nanophotonics can be broadly classified into integrated photonics (with guided wave light propagation) and Meta-optics (with free space light propagation). Despite some early comprehensive reviews, the pace of development in the last few years has shown the need for a topical review. Our comprehensive review covers recent progress on nanophotonic architectures, tuning mechanisms, and functionalities in tunable PCM Chalcogenides. In terms of integrated photonics, we identify novel PCM nanoantenna geometries, novel material utilization, the use of nanostructured waveguides, and sophisticated excitation pulsing schemes. On the meta-optics front, the breadth of functionalities has expanded, enabled by exploring design aspects for better performance. The review identifies immediate, and intermediate-term challenges and opportunities in (1) the development of novel chalcogenide PCM, (2) advance in tuning mechanism, and (3) formal inverse design methods, including machine learning augmented inverse design, and provides perspectives on these aspects. The topical review will interest researchers in further advancing this rapidly growing subfield of nanophotonics.

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Low-symmetric GeTe semiconductors have attracted wide-ranging attention due to their excellent optical and thermal properties, but only a few research studies are available on their in-plane optical anisotropic nature that is crucial for their applications in optoelectronic and thermoelectric devices. Here, we investigate the optical interactions of anisotropy in GeTe using polarization-resolved Raman spectroscopy and first-principles calculations. After determining both armchair and zigzag directions in GeTe crystals by transmission electron microscopy, we found that the Raman intensity of the two main vibrational modes had a strong in-plane anisotropic nature; the one at ∼88.1 cm-1 can be used to determine the crystal orientation, and the other at ∼124.6 cm-1 can reveal a series of temperature-dependent phase transitions. These results provide a general approach for the investigation of the anisotropy of light-matter interactions in low-symmetric layered materials, benefiting the design and application of optoelectronic, anisotropic thermoelectric, and phase-transition memory devices based on bulk GeTe.

High-speed polarization-independent plasmonic modulator on a silicon waveguide

The electrical bandwidth of an electro-optic modulator plays a vital role in determining the throughput of an optical communications link. We propose a broadband plasmonic electro-optic modulator operating at telecommunications wavelengths (λ₀ ∼ 1550 nm), based on free carrier dispersion in indium tin oxide (ITO). The ITO is driven through its epsilon-near-zero point within the accumulation layers of metal-oxide-semiconductor (MOS) structures. The MOS structures are integrated into a pair of coupled metal-insulator-metal (MIM) waveguides aligned on a planarized silicon waveguide. The coupled MIM waveguides support symmetric and asymmetric plasmonic supermodes, excited adiabatically using mode transformation tapers, by the fundamental TM₀ and TE₀ modes of the underlying silicon waveguide, respectively, such that the modulator can operate in either mode as selected by the input polarisation to the silicon waveguide. The modulator has an active section 1.5 to 2 µm long, enabling the modulator to operate as a lumped element to bandwidths exceeding 200 GHz (3 dB electrical, RC-limited). The modulators produce an extinction ratio in the range of 3.5 to 6 dB, and an insertion loss in the range of 4 to 7.5 dB including input/output mode conversion losses. The AC drive voltage is ±1.75 V. The devices comprise only inorganic materials and are realisable using standard deposition, etching and nanolithography techniques.

Inverse Design and Numerical Investigations of an Ultra-Compact Integrated Optical Switch Based on Phase Change Material

The miniaturization of optical switches is a promising prospect with the use of phase-change materials (PCMs), and exploring various strategies to effectively integrate PCMs with integrated optical waveguides represents an intriguing research question. In this study, an ultra-compact integrated optical switch based on PCM is proposed. This device consists of a Ge2Sb2Te5 nano-disk and an inverse-designed pixelated sub-wavelength structure. The pixelated sub-wavelength structure offers customized refractive indices that conventional materials or structures cannot achieve, leading to an improved insertion loss (IL) and extinction ratio (ER) performance of the device. Furthermore, this structure enhances the interaction between the optical field and GST, resulting in a reduction of the device size and the inserted GST footprint. With an ultra-compact device footprint of 0.9 µm × 1.5 µm, the simulation results exhibit a low IL of 0.45 dB, and a high ER of 18.0 dB at 1550 nm. Additionally, relevant studies show that this device is able to perform reliably despite minor variations in the manufacturing process.

Ultrafast Near-Ideal Phase-Change Memristive Physical Unclonable Functions Driven by Amorphous State Variations

There is an ever-increasing demand for next-generation devices that do not require passwords and are impervious to cloning. For traditional hardware security solutions in edge computing devices, inherent limitations are addressed by physical unclonable functions (PUF). However, realizing efficient roots of trust for resource constrained hardware remains extremely challenging, despite excellent demonstrations with conventional silicon circuits and archetypal oxide memristor-based crossbars. An attractive, down-scalable approach to design efficient cryptographic hardware is to harness memristive materials with a large-degree-of-randomness in materials state variations, but this strategy is still not well understood. Here, the utilization of high-degree-of-randomness amorphous (A) state variations associated with different operating conditions via thermal fluctuation effects is demonstrated, as well as an integrated framework for in memory computing and next generation security primitives, viz., APUF, for achieving secure key generation and device authentication. Near ideal uniformity and uniqueness without additional initial writing overheads in weak memristive A-PUF is achieved. In-memory computing empowers a strong exclusive OR (XOR-) and-repeat A PUF construction to avoid machine learning attacks, while rapid crystallization processes enable large-sized-key reconfigurability. These findings pave the way for achieving a broadly applicable security primitive for enhancing antipiracy of integrated systems and product authentication in supply chains.

Phase change metamaterial for tunable infrared stealth and camouflage

In the paper, a type of phase change metamaterial for tunable infrared stealth and camouflage is proposed and numerically studied. The metamaterial combines high temperature resistant metal Mo with phase-changing material GST and can be switched between the infrared "stealthy" and "non-stealthy" states through the phase change process of the GST. At the amorphous state of GST, there is a high absorption peak at the atmospheric absorption spectral range, which can achieve infrared stealth in the atmospheric window together with good radiative heat dissipation in the non-atmospheric window. While at the crystalline state of GST, the absorption peak becomes broader and exhibits high absorption in the long-wave infrared atmospheric window, leading to a "non-stealthy" state. The relationship between the infrared stealth performance of the structure with the polarization and incident angle of the incident light is also studied in detail. The proposed infrared stealth metamaterial employs a simple multilayer structure and could be fabricated in large scale. Our work will promote the research of dynamically tunable, large scale phase change metamaterials for infrared stealth as well as energy and other applications.

TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

In this study, we present an all-optical reflection modulator for the 2 µm communication band exploiting a nanogear-array metasurface and phase-change-material G e ₂ S b ₂ T e ₅ (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli, and this paper provides details on the optical and opto-thermal modeling techniques of GST. A numerical investigation reveals that the metastructure exhibits a conspicuous changeover from ∼99% absorption to very poor interaction with the operating light depending on the switching states of the GST, ending up with 85% modulation depth and only 0.58 dB insertion loss. Due to noticeable differences in optical responses, we can demonstrate a high extinction ratio of 28 dB and a commendable figure of merit of 49, so far the best modulation performance in this wavelength window, to our knowledge. In addition, real-time tracking of reflectance during phase transition manifests high-speed switching expending low energy per cycle, of the order of sub-nJ. Hence, given its overall performance, the device will be a paradigm for optical modulators for upcoming 2 µm communication technology.

Reflective Terahertz Metasurfaces Based on Non-Volatile Phase Change Material for Switchable Manipulation

Recently, metasurfaces have been investigated and exploited for various applications in the THz regime, including modulators and detectors. However, the responsive properties of the metasurface in THz stay fixed once the fabrication process is complete. This limitation can be modified when integrating the phase change material (PCM), whose states are switchable between crystalline and amorphous, into the metasurface structure. This characteristic of the PCM is appealing in achieving dynamic and customizable functionality. In this work, the reflective metasurface structure is designed as a hexagonal unit deposited on a polyimide substrate. The non-volatile PCM chosen for the numerical study is germanium antimony tellurium (GST). Our proposed phase change metasurface provides two resonant frequencies located at 1.72 and 2.70 THz, respectively; one of them shows a high contrast of reflectivity at almost 80%. The effects of geometrical parameters, incident angles, and polarization modes on the properties of the proposed structure are explored. Finally, the performances of the structure are evaluated in terms of the insertion loss and extinction ratio.

Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide

The morphological, structural, and electrical properties of as-grown and annealed Ge₂Sb₂Te₅ (GST) layers, deposited by RF-sputtering on flexible polyimide, were studied by means of optical microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and electrical characterization. The X-ray diffraction annealing experiments showed the structural transformation of GST layers from the as-grown amorphous state into their crystalline cubic and trigonal phases. The onset of crystallization of the GST films was inferred at about 140 °C. The vibrational properties of the crystalline GST layers were investigated via Raman spectroscopy with mode assignment in agreement with previous works on GST films grown on rigid substrates. The electrical characterization revealed a good homogeneity of the amorphous and crystalline trigonal GST with an electrical resistance contrast of 8 × 10⁶.

Interlaboratory study on Sb2S3 interplay between structure, dielectric function, and amorphous-to-crystalline phase change for photonics

Antimony sulfide, Sb₂S₃, is interesting as the phase-change material for applications requiring high transmission from the visible to telecom wavelengths, with its band gap tunable from 2.2 to 1.6 eV, depending on the amorphous and crystalline phase. Here we present results from an interlaboratory study on the interplay between the structural change and resulting optical contrast during the amorphous-to-crystalline transformation triggered both thermally and optically. By statistical analysis of Raman and ellipsometric spectroscopic data, we have identified two regimes of crystallization, namely 250°C ≤ T < 300°C, resulting in Type-I spherulitic crystallization yielding an optical contrast Δn ∼ 0.4, and 300 ≤ T < 350°C, yielding Type-II crystallization bended spherulitic structure with different dielectric function and optical contrast Δn ∼ 0.2 below 1.5 eV. Based on our findings, applications of on-chip reconfigurable nanophotonic phase modulators and of a reconfigurable high-refractive-index core/phase-change shell nanoantenna are designed and proposed.

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Study of the dielectric function of amorphous and crystalline Sb2S3 phase change material

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Identification of two crystallization regimes for the phase change of Sb2S3

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Design of Sb2S3 on-chip reconfigurable photonic phase modulator

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Design of reconfigurable high-refractive index core/phase-change shell nanoantenna

Artificial Anisotropy in Ge2Sb2Te5 Thin Films after Femtosecond Laser Irradiation

Ge₂Sb₂Te₅ (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we combined the possibilities of crystallization and anisotropic structures fabrication using femtosecond laser treatment at the 1250 nm wavelength of 200 nm thin amorphous GST225 films on silicon oxide/silicon substrates. A raster treatment mode and photoexcited surface plasmon polariton generation allowed us to produce mutually orthogonal periodic structures, such as scanline tracks (the period is 120 ± 10 μm) and laser-induced gratings (the period is 1100 ± 50 nm), respectively. Alternating crystalline and amorphous phases at the irradiated surfaces were revealed according to Raman spectroscopy and optical microscopy studies for both types of structures. Such periodic modulation leads to artificial optical and electrophysical anisotropy. Reflectance spectra in the near infrared range differ for various polarizations of probing light, and this mainly results from the presence of laser-induced periodic surface structures. On the other hand, the scanline tracks cause strong conductivity anisotropy for dc measurements in the temperature range of 200–400 K. The obtained results are promising for designing new GST225-based memory devices in which anisotropy may promote increasing the information recording density.

Kinetic Monte Carlo simulations of Ge-Sb-Te thin film crystallization

Simulation of atomic redistribution in Ge-Sb-Te (GST)-based memory cells during SET/RESET cycling is needed in order to understand GST memory cell failure and to design improved non-volatile memories. However, this type of atomic scale simulations is extremely challenging. In this work, we propose to use a simplified GST system in order to catch the basics of atomic redistribution in Ge-rich GST (GrGST) films using atomistic kinetic Monte Carlo simulations. Comparison between experiments and simulations shows good agreements regarding the influence of Ge excess on GrGST crystallization, as well as concerning the GST growth kinetic in GrGST films, suggesting the crystallized GST ternary compound to be off-stoichiometric. According to the simulation of atomic redistribution in GrGST films during SET/RESET cycling, the film microstructure stabilized during cycling is significantly dependent of the GST ternary phase stoichiometry. The use of amorphous layers exhibiting the GST ternary phase stoichiometry placed at the bottom or at the top of the GrGST layer is shown to be a way of controlling the microstructure evolution of the film during cycling. The significant evolution of the local composition in the amorphous solution during cycling suggests a non-negligible variation of the crystallization temperature with operation time.

The Stibium Bond or the Antimony-Centered Pnictogen Bond: The Covalently Bound Antimony Atom in Molecular Entities in Crystal Lattices as a Pnictogen Bond Donor

A stibium bond, i.e., a non-covalent interaction formed by covalently or coordinately bound antimony, occurs in chemical systems when there is evidence of a net attractive interaction between the electrophilic region associated with an antimony atom and a nucleophile in another, or the same molecular entity. This is a pnictogen bond and are likely formed by the elements of the pnictogen family, Group 15, of the periodic table, and is an inter- or intra-molecular non-covalent interaction. This overview describes a set of illustrative crystal systems that were stabilized (at least partially) by means of stibium bonds, together with other non-covalent interactions (such as hydrogen bonds and halogen bonds), retrieved from either the Cambridge Structure Database (CSD) or the Inorganic Crystal Structure Database (ICSD). We demonstrate that these databases contain hundreds of crystal structures of various dimensions in which covalently or coordinately bound antimony atoms in molecular entities feature positive sites that productively interact with various Lewis bases containing O, N, F, Cl, Br, and I atoms in the same or different molecular entities, leading to the formation of stibium bonds, and hence, being partially responsible for the stability of the crystals. The geometric features, pro-molecular charge density isosurface topologies, and extrema of the molecular electrostatic potential model were collectively examined in some instances to illustrate the presence of Sb-centered pnictogen bonding in the representative crystal systems considered.

Switchable distributed Bragg reflector using GST phase change material

We demonstrate the design, fabrication, and measurement of a switchable distributed Bragg reflector (DBR) that can be thermally switched from a close-to-zero reflective OFF state to a more than 70% reflection in its ON state. This is accomplished using a multilayer thin film stack using germanium (Ge) and the phase change material (PCM) Ge₂Sb₂Te₅ (GST). The refractive indexes of Ge and GST in the amorphous state are closely matched, resulting in a nearly zero interface reflection. With appropriate antireflection coatings at the cavity ends, the overall reflection can be designed to be close to zero. When the GST is switched to the crystalline state, the refractive index contrast between the Ge and GST layers will increase dramatically contributing to the DBR reflection. Using this unique feature, we were able to design and experimentally demonstrate more than 70% reflection in the ON state and close to zero reflection in the OFF state at a wavelength of 2 µm.

Compact, broadband, and low-loss multimode optical switch based on phase-change material for mode division multiplexing systems

Mode-division multiplexing (MDM) technology is one of the suitable approaches to increase data transmission capacity in photonic integrated circuits. Multimode optical switches play an important role in MDM interconnection networks. In this article, we present a multimode on-off optical switch using Ge₂Sb₂Se₄Te₁ phase-change material for the first two TE modes (TE0 and TE1) and the first two TM modes (TM0 and TM1) in a wide wavelength range between 100 nm to around 1550 nm. The 3D finite-difference time-domain simulations indicate that for each propagating mode across the bandwidth, the insertion loss and extinction ratio are less than 0.80 dB and more than 20.21 dB, respectively. The proposed switch has a compact footprint of 10.7µm×3µm. The presented switch also tolerates a ±20nm change in the waveguide width, a ±10nm silicon waveguide height deflection, and a ±5nm GSST thickness variation with an insertion loss lower than 0.91 dB and an extinction ratio higher than 19.04 dB.

Suppressed electronic contribution in thermal conductivity of Ge2Sb2Se4Te

Integrated nanophotonics is an emerging research direction that has attracted great interests for technologies ranging from classical to quantum computing. One of the key-components in the development of nanophotonic circuits is the phase-change unit that undergoes a solid-state phase transformation upon thermal excitation. The quaternary alloy, Ge2Sb2Se4Te, is one of the most promising material candidates for application in photonic circuits due to its broadband transparency and large optical contrast in the infrared spectrum. Here, we investigate the thermal properties of Ge2Sb2Se4Te and show that upon substituting tellurium with selenium, the thermal transport transitions from an electron dominated to a phonon dominated regime. By implementing an ultrafast mid-infrared pump-probe spectroscopy technique that allows for direct monitoring of electronic and vibrational energy carrier lifetimes in these materials, we find that this reduction in thermal conductivity is a result of a drastic change in electronic lifetimes of Ge2Sb2Se4Te, leading to a transition from an electron-dominated to a phonon-dominated thermal transport mechanism upon selenium substitution. In addition to thermal conductivity measurements, we provide an extensive study on the thermophysical properties of Ge2Sb2Se4Te thin films such as thermal boundary conductance, specific heat, and sound speed from room temperature to 400 °C across varying thicknesses.

Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge-Sb-Te nanowires were self-assembled through the vapor-liquid-solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge-Sb-Te core and Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition.

Metasurface-Driven Optically Variable Devices

Optically variable devices (OVDs) are in tremendous demand as optical indicators against the increasing threat of counterfeiting. Conventional OVDs are exposed to the danger of fraudulent replication with advances in printing technology and widespread copying methods of security features. Metasurfaces, two-dimensional arrays of subwavelength structures known as meta-atoms, have been nominated as a candidate for a new generation of OVDs as they exhibit exceptional behaviors that can provide a more robust solution for optical anti-counterfeiting. Unlike conventional OVDs, metasurface-driven OVDs (mOVDs) can contain multiple optical responses in a single device, making them difficult to reverse engineered. Well-known examples of mOVDs include ultrahigh-resolution structural color printing, various types of holography, and polarization encoding. In this review, we discuss the new generation of mOVDs. The fundamentals of plasmonic and dielectric metasurfaces are presented to explain how the optical responses of metasurfaces can be manipulated. Then, examples of monofunctional, tunable, and multifunctional mOVDs are discussed. We follow up with a discussion of the fabrication methods needed to realize these mOVDs, classified into prototyping and manufacturing techniques. Finally, we provide an outlook and classification of mOVDs with respect to their capacity and security level. We believe this newly proposed concept of OVDs may bring about a new era of optical anticounterfeit technology leveraging the novel concepts of nano-optics and nanotechnology.

Smart Materials for Dynamic Thermal Radiation Regulation

Thermal radiation in the mid-infrared region profoundly affects human lives in various fields, including thermal management, imaging, sensing, camouflage, and thermography. Due to their fixed emissivities, radiance features of conventional materials are usually proportional to the quadruplicate of surface temperature, which set the limit, that one type of material can only present a single thermal function. Therefore, it is necessary and urgent to design materials for dynamic thermal radiation regulations to fulfill the demands of the age of intelligent machines. Recently, the ability of some smart materials to dynamically regulate thermal radiation has been evaluated. These materials are found to be competent enough for various commands, thereby, providing better alternatives and tremendously promoting the commercial potentials. In this review, the dynamic regulatory mechanisms and recent progress in the evaluation of these smart materials are summarized, including thermochromic materials, electrochromic materials, mechanically and humidity responsive materials, with the potential applications, insufficient problems, and possible strategies highlighted.

Enhanced Permeability of Fe-Based Amorphous Powder Cores Realized through Selective Incorporation of Carbonyl Iron Powders at Inter-Particle Voids

In this study, we demonstrate a hybrid multimodal soft magnetic composite (SMC) comprising gas-atomized spherical amorphous powder (AP) and carbonyl-iron powder (CIP), and present its enhanced electromagnetic properties. CIP is selectively incorporated into voids between AP, and deforms during compression, effectively reducing the pores, resulting in high packing density of the core, where CIP magnetically bridges AP and helps magnetic domain rotation much efficiently. The hybrid SMC with the addition of 20 wt.% CIP showed constant effective permeability of 57 up to 1 MHz, a remarkable 63% increase compared with the AP core, while DC bias superimposing retention level of 61% was secured with the help of high magnetization of CIP. In addition, the effect of SiO2 surface insulation, prepared by the sol-gel process, on the high-frequency magnetic properties of hybrid SMCs, was also evaluated. It is thus revealed that the high-frequency dynamic loss of the hybrid core, originating from intra-particle eddy current loss and anomalous loss component, and inter-particle eddy currents are negligibly small. We believe that our approach using AP/CIP multimodal hybrid SMCs is an effective way of achieving high permeability as well as high DC bias characteristics at high frequencies. This process will be highly beneficial for the miniaturization of power inductors.

Effect of Nitrogen Doping on the Crystallization Kinetics of Ge2Sb2Te5

Among the phase change materials, Ge₂Sb₂Te₅ (GST-225) is the most studied and is already integrated into many devices. N doping is known to significantly improve some key characteristics such as the thermal stability of materials and the resistance drift of devices. However, the origin, at the atomic scale, of these alterations is rather elusive. The most important issue is to understand how N doping affects the crystallization characteristics, mechanisms and kinetics, of GST-225. Here, we report the results of a combination of in situ and ex situ transmission electron microscopy (TEM) investigations carried out on specifically designed samples to evidence the influence of N concentration on the crystallization kinetics and resulting morphology of the alloy. Beyond the known shift of the crystallization temperature and the observation of smaller grains, we show that N renders the crystallization process more "nucleation dominated" and ascribe this characteristic to the increased viscosity of the amorphous state. This increased viscosity is linked to the mechanical rigidity and the reduced diffusivity resulting from the formation of Ge-N bonds in the amorphous phase. During thermal annealing, N hampers the coalescence of the crystalline grains and the cubic to hexagonal transition. Making use of AbStrain, a recently invented TEM-based technique, we evidence that the nanocrystals formed from the crystallization of N-doped amorphous GST-225 are under tension, which suggests that N is inserted in the lattice and explains why it is not found at grain boundaries. Globally, all these results demonstrate that the origin of the effect of N on the crystallization of GST-225 is not attributed to the formation of a secondary phase such as a nitride, but to the ability of N to bind to Ge in the amorphous and crystalline phases and to unbind and rebind with Ge along the diffusion path of this atomic species during annealing.

Stimuli-Responsive Phase Change Materials: Optical and Optoelectronic Applications

Stimuli-responsive materials offer a large variety of possibilities in fabrication of solid- state devices. Phase change materials (PCMs) undergo rapid and drastic changes of their optical properties upon switching from one crystallographic phase to another one. This peculiarity makes PCMs ideal candidates for a number of applications including sensors, active displays, photonic volatile and non-volatile memories for information storage and computer science and optoelectronic devices. This review analyzes different examples of PCMs, in particular germanium–antimonium tellurides and vanadium dioxide (VO₂) and their applications in the above-mentioned fields, with a detailed discussion on potential, limitations and challenges.

On-Chip Integrated Photonic Devices Based on Phase Change Materials

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

Nanostructured Surface Finishing and Coatings: Functional Properties and Applications

This review presents current literature on different nanocomposite coatings and surface finishing for textiles, and in particular this study has focused on smart materials, drug-delivery systems, industrial, antifouling and nano/ultrafiltration membrane coatings. Each of these nanostructured coatings shows interesting properties for different fields of application. In this review, particular attention is paid to the synthesis and the consequent physico-chemical characteristics of each coating and, therefore, to the different parameters that influence the substrate deposition process. Several techniques used in the characterization of these surface finishing coatings were also described. In this review the sol-gel method for preparing stimuli-responsive coatings as smart sensor materials is described; polymers and nanoparticles sensitive to pH, temperature, phase, light and biomolecules are also treated; nanomaterials based on phosphorus, borates, hydroxy carbonates and silicones are used and described as flame-retardant coatings; organic/inorganic hybrid sol-gel coatings for industrial applications are illustrated; carbon nanotubes, metallic oxides and polymers are employed for nano/ultrafiltration membranes and antifouling coatings. Research institutes and industries have collaborated in the advancement of nanotechnology by optimizing conversion processes of conventional materials into coatings with new functionalities for intelligent applications.

Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1-x-y Thin Films by In Situ Measurements

To understand the effects of thermal annealing on the structure of Ge_xAs_ySe_1−x−y thin films, the thermal evolution of these films was measured by the in situ X-ray diffraction (XRD) at different temperature (773 K or 1073 K) in a vacuum (10⁻¹ Pa) environment. The entire process of crystallization can be observed by using in situ XRD, which is from the appearance of a crystal structure to melting liquid-state and ultimately to the disappearance of the amorphous structure. In the crystallized process, the corresponding state-transition temperatures T_x (the onset crystallization temperature), T_l (the transition temperature from glassy-state to liquid-state), T_p (peak crystallization temperature) are linear with MCN (Mean Coordination Number). In order to obtain information about changes in the amorphous structural origin of the anneal-induced material, the samples were analyzed by in situ Raman spectroscopy. Analysis of the results through decomposing the Raman spectra into different structural units showed that the Ge−Ge, As−As, or Se−Se homopolar bonds as the nonequilibrium minority carriers could be found in films. It suggests that the formation of these bonds cannot be completely suppressed in any case, as one falls and another rises.

Electrically controlled 1 × 2 tunable switch using a phase change material embedded silicon microring

Phase change material Ge₂Sb₂Te₅ (GST) has recently emerged as a highly promising candidate for photonic device applications owing to its high optical contrast, self-holding bi-stability, and fast material response. Here, we propose and analyze a 1×2 tunable switch using a GST embedded silicon microring resonator exploiting high optical contrast during GST phase change and a high thermo-optic coefficient of amorphous phase GST. Our device exhibits high extinction ratios of 25.57 dB and 18.75 dB at through and drop ports, respectively, with just a 1 µm long GST layer. The two states of the switch are realizable by electrically inducing phase change in GST. For post phase change from amorphous to crystalline and vice versa, the fall time down the 80% of phase transition temperature is ∼66ns and ∼45ns, respectively. The resonance wavelength shift per unit active length is 0.661 nm/µm, and the tuning efficiency is 1.16 nm/mW. The large wavelength tunability (4.63 nm) of the proposed switch makes it an attractive option for reconfigurable photonic integrated circuits.

Structural transformation and phase change properties of Se substituted GeTe

GeTe_1−xSe_x (0 ≤ x ≤ 1.0) alloys have been prepared both in bulk and thin film forms to study the effect of selenium (Se) substitution for tellurium (Te) on the phase change properties. It is observed that with increasing Se substitution in GeTe, the structure transforms from rhombohdral structure to orthorhombic structure. Rietveld Refinement analysis support the phase transformation and show that the short and long bond lengths in crystalline GeTe decrease with increasing Se substitution but the rate of reduction of shorter bond length is more than the longer bond length. The GeTe_1−xSe_x thin films undergo amorphous to crystalline phase change when annealed at high temperatures. The transition temperature shows an increasing trend with the Se substitution. The contrast in electrical resistivity between the amorphous and crystalline states is 10⁴ for GeTe, and with the Se substitution, the contrast increases considerably to 10⁶ for GeTe_0.5Se_0.5. Devices fabricated with thin films show that the threshold current decreases with the Se substitution indicating a reduction in the power required for WRITE operation. The present study shows that the crystalline structure, resistance, bandgap, transition temperature and threshold voltage of GeTe can be effectively controlled and tuned by the substitution of Te by Se, which is conducive for phase change memory applications.

Subwavelength grating waveguide filter based on cladding modulation with a phase-change material grating

Subwavelength engineering and utilizing phase-change materials with large contrast in their optical properties have become powerful design tools for integrated silicon photonics. Reversible phase-transition of phase-change materials such as Ge₂Sb₂Te₅ (GST) provide a new degree of freedom and open up the possibility of adding new functionalities to the designed devices. We present an optical filter based on a silicon subwavelength grating (SWG) waveguide evanescently coupled to phase-change material loading segments arranged periodically around the SWG core. The effect of the GST loading segments' geometry and their distance from the SWG core on the filter's central wavelength and bandwidth are studied with three-dimensional finite-difference time-domain simulations. The employment of GST in the structure adds a switching functionality with an extinction ratio of 28.8 dB. We also examine the possibility of using the proposed structure as a reconfigurable filter by controlling the partial crystallization of the GST offering a blueshift of more than 4 nm.

Tunable metasurfaces using phase change materials and transparent graphene heaters

Tunable metasurfaces enable us to dynamically control light at subwavelength scales. Here, using phase change materials and transparent graphene heaters, a new structure is proposed to develop tunable metasurfaces which support first-order Mie-type resonance in the near-IR regime. In the proposed structure, by adjusting the bias voltages applied to transparent graphene heaters, the crystallization levels of the phase change materials are controlled, which in turn modifies the response of the metasurface. The proposed metasurface is able to modulate the phase of the reflected wave in the range of 0° to -270° at the telecommunication wavelength of λ = 1.55 µm. A comprehensive Joule heating analysis is performed to investigate the thermal characterizations of the proposed structure. The results of this analysis show that there is a suitable thermal isolation between adjacent unit cells, making individual control on unit cells possible. The potential ability of the proposed metasurface as a beam steering device is also demonstrated. By using the proposed unit cells, a beam-steering device is designed and numerically studied. This study shows that the device can reflect a light normally incident on it in the range of ±65° with reasonably low sidelobe levels. The proposed structure can be used in developing low-cost integrated LiDARs.

Reversible Al Propagation in Si x Ge1-x Nanowires: Implications for Electrical Contact Formation

While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid-state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopants into the substitutional positions in the matrix and improve device properties. Typically, such a diffusion process will create a concentration gradient extending over increasingly large regions, without possibility to reverse this effect. On the other hand, while the bottom-up growth of semiconducting nanowires is interesting, it can still be difficult to fabricate axial heterostructures with high control. In this paper, we report a thermally assisted partially reversible thermal diffusion process occurring in the solid-state reaction between an Al metal pad and a Si x Ge1-x alloy nanowire observed by in situ transmission electron microscopy. The thermally assisted reaction results in the creation of a Si-rich region sandwiched between the reacted Al and unreacted Si x Ge1-x part, forming an axial Al/Si/Si x Ge1-x heterostructure. Upon heating or (slow) cooling, the Al metal can repeatably move in and out of the Si x Ge1-x alloy nanowire while maintaining the rodlike geometry and crystallinity, allowing to fabricate and contact nanowire heterostructures in a reversible way in a single process step, compatible with current Si-based technology. This interesting system is promising for various applications, such as phase change memories in an all crystalline system with integrated contacts as well as Si/Si x Ge1-x /Si heterostructures for near-infrared sensing applications.

Artificial neural network discovery of a switchable metasurface reflector

Optical materials engineered to dynamically and selectively manipulate electromagnetic waves are essential to the future of modern optical systems. In this paper, we simulate various metasurface configurations consisting of periodic 1D bars or 2D pillars made of the ternary phase change material Ge₂Sb₂Te₅ (GST). Dynamic switching behavior in reflectance is exploited due to a drastic refractive index change between the crystalline and amorphous states of GST. Selectivity in the reflection and transmission spectra is manipulated by tailoring the geometrical parameters of the metasurface. Due to the immense number of possible metasurface configurations, we train deep neural networks capable of exploring all possible designs within the working parameter space. The data requirements, predictive accuracy, and robustness of these neural networks are benchmarked against a ground truth by varying quality and quantity of training data. After ensuring trustworthy neural network advisory, we identify and validate optimal GST metasurface configurations best suited as dynamic switchable mirrors depending on selected light and manufacturing constraints.

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. Integration of a phase-change material (PCM) with HS can tremendously extend the operating and application range using the "phase-tuning" of PCM for any optoelectronic devices. In the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge₂Sb₂Te₅ (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. The changes in optical properties are analysed using Ellipsometry, UV-Vis-NIR and Raman spectroscopy to speculate the optoelectronic behaviour of GST/Si samples. The optical and electrical characterization were analysed with aluminium (Al), platinum (Pt) and Ti/Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photo-current to dark-current ratio is demonstrated in wavelength range of 0.8-2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvin-probe force microscopy and carrier density measurement by Hall experiment. Our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits.

Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD

Antimony telluride (Sb₂Te₃) thin films were prepared by a room temperature Metal-Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl₃) and bis(trimethylsilyl)telluride (Te(SiMe₃)₂) as precursors. Pre-growth and post-growth treatments were found to be pivotal in favoring out-of-plane and in-plane alignment of the crystallites composing the films. A comprehensive suite of characterization techniques were used to evaluate their composition, surface roughness, as well as to assess their morphology, crystallinity, and structural features, revealing that a quick post-growth annealing triggers the formation of epitaxial-quality Sb₂Te₃ films on Si(111).

The vacuum arc ion source for indium and tin ions implantation into phase change memory thin films

One of the most prospective electrical and optical nonvolatile memory types is the phase change memory based on chalcogenide materials, particularly Ge₂Sb₂Te₅. Introduction of dopants is an effective method for the purposeful change of Ge₂Sb₂Te₅ thin film properties. In this work, we used the ion implantation method for the introduction of In and Sn into Ge₂Sb₂Te₅ thin films by a Multipurpose Test Bench (MTB) at the National Research Center "Kurchatov Institute"-Institute for Theoretical and Experimental Physics. For Sn and In ion implantation into Ge₂Sb₂Te₅, the following MTB elements were used: a vacuum arc ion source, an electrostatic focusing system, and a system for current and beam profile measurements. The MTB parameters for Sn and In ion implantation and its effect on the material properties are presented. Implanted Ge₂Sb₂Te₅ thin films were irradiated by femtosecond laser pulses. It was shown that the ion implantation resulted in a decrease in the threshold laser fluence necessary for crystallization compared to the undoped Ge₂Sb₂Te₅.