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Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA. An overview of critical applications of resistive random access memory. NANOSCALE ADVANCES 2024:d4na00158c. [PMID: 39263252 PMCID: PMC11382421 DOI: 10.1039/d4na00158c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 08/10/2024] [Indexed: 09/13/2024]
Abstract
The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits. The prevalent von Neumann architecture, where processing and storage units operate independently, faces challenges such as data migration through buses, leading to decreased computing speed and increased energy loss. Ongoing research aims to enhance computing capabilities through the development of innovative chips and the adoption of new system architectures. One noteworthy advancement is Resistive Random Access Memory (RRAM), an emerging memory technology. RRAM can alter its resistance through electrical signals at both ends, retaining its state even after power-down. This technology holds promise in various areas, including logic computing, neural networks, brain-like computing, and integrated technologies combining sensing, storage, and computing. These cutting-edge technologies offer the potential to overcome the performance limitations of traditional architectures, significantly boosting computing power. This discussion explores the physical mechanisms, device structure, performance characteristics, and applications of RRAM devices. Additionally, we delve into the potential future adoption of these technologies at an industrial scale, along with prospects and upcoming research directions.
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Affiliation(s)
- Furqan Zahoor
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Arshid Nisar
- Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India
| | - Usman Isyaku Bature
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia
| | - Haider Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University Seoul 143-747 Republic of Korea
| | - Faisal Bashir
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Anupam Chattopadhyay
- College of Computing and Data Science, Nanyang Technological University 639798 Singapore
| | - Brajesh Kumar Kaushik
- Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India
| | - Ali Alzahrani
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Fawnizu Azmadi Hussin
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia
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2
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Winkler R, Zintler A, Recalde-Benitez O, Jiang T, Nasiou D, Adabifiroozjaei E, Schreyer P, Kim T, Piros E, Kaiser N, Vogel T, Petzold S, Alff L, Molina-Luna L. Texture Transfer in Dielectric Layers via Nanocrystalline Networks: Insights from in Situ 4D-STEM. NANO LETTERS 2024; 24:2998-3004. [PMID: 38319977 DOI: 10.1021/acs.nanolett.3c03941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Transition metal oxide dielectric layers have emerged as promising candidates for various relevant applications, such as supercapacitors or memory applications. However, the performance and reliability of these devices can critically depend on their microstructure, which can be strongly influenced by thermal processing and substrate-induced strain. To gain a more in-depth understanding of the microstructural changes, we conducted in situ transmission electron microscopy (TEM) studies of amorphous HfO2 dielectric layers grown on highly textured (111) substrates. Our results indicate that the minimum required phase transition temperature is 180 °C and that the developed crystallinity is affected by texture transfer. Using in situ TEM and 4D-STEM can provide valuable insights into the fundamental mechanisms underlying the microstructural evolution of dielectric layers and could pave the way for the development of more reliable and efficient devices for future applications.
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Affiliation(s)
- Robert Winkler
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Alexander Zintler
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Oscar Recalde-Benitez
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Tianshu Jiang
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Déspina Nasiou
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Esmaeil Adabifiroozjaei
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Philipp Schreyer
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Taewook Kim
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Eszter Piros
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Nico Kaiser
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Tobias Vogel
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Stefan Petzold
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Lambert Alff
- Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Leopoldo Molina-Luna
- Advanced Electron Microscopy Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
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Pradhan I, Mahapatra A, Samal PP, Mishra P, Kumar P, Nayak A. Liquid-Liquid Interface-Assisted Self-Assembly of Ag-Doped ZnO Nanosheets for Atomic Switch Application. J Phys Chem Lett 2024; 15:165-172. [PMID: 38150295 DOI: 10.1021/acs.jpclett.3c02791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Developing facile and inexpensive methods for obtaining large-area two-dimensional semiconducting nanosheets is highly desirable for mass-scale device application. Here, we report a method for producing uniform and large-area films of a Ag-doped ZnO (AZO) nanosheet network via self-assembly at the hexane-water interface by controlling the solute/solvent ratio. The self-assembled film comprises of uniformly tiled nanosheets with size ∼1 μm and thicknesses∼60-100 nm. Using these films in a Pt/AZO/Ag structure, an atomic switch operation is realized. The switching mechanism is found to be governed by electrochemical metallization with nucleation as the rate-limiting step. Our results establish the protocol for large-scale device applications of AZO nanosheets for exploring advanced atomic switch-based neuromorphic systems.
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Affiliation(s)
- Itishree Pradhan
- Department of Physics, Indian Institute of Technology Patna, Patna 801106, India
| | - Anwesha Mahapatra
- Department of Physics, Indian Institute of Technology Patna, Patna 801106, India
| | | | - Puneet Mishra
- Department of Physics, Central University of South Bihar, Gaya 824236, India
| | - Prashant Kumar
- Global Innovative Centre for Advanced Nanomaterials, University of Newcastle, Callaghan Campus 2308, New South Wales, Australia
| | - Alpana Nayak
- Department of Physics, Indian Institute of Technology Patna, Patna 801106, India
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4
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Lee J, Yang K, Kwon JY, Kim JE, Han DI, Lee DH, Yoon JH, Park MH. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. NANO CONVERGENCE 2023; 10:55. [PMID: 38038784 PMCID: PMC10692067 DOI: 10.1186/s40580-023-00403-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Accepted: 11/08/2023] [Indexed: 12/02/2023]
Abstract
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices.
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Affiliation(s)
- Jaewook Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Ju Young Kwon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Ji Eun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Dong In Han
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
- Research Institute of Advanced Materials, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
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Piquemal F, Kaja K, Chrétien P, Morán-Meza J, Houzé F, Ulysse C, Harouri A. A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2023; 14:1141-1148. [PMID: 38034476 PMCID: PMC10682512 DOI: 10.3762/bjnano.14.94] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Accepted: 11/09/2023] [Indexed: 12/02/2023]
Abstract
Measuring resistances at the nanoscale has attracted recent attention for developing microelectronic components, memory devices, molecular electronics, and two-dimensional materials. Despite the decisive contribution of scanning probe microscopy in imaging resistance and current variations, measurements have remained restricted to qualitative comparisons. Reference resistance calibration samples are key to advancing the research-to-manufacturing process of nanoscale devices and materials through calibrated, reliable, and comparable measurements. No such calibration reference samples have been proposed so far. In this work, we demonstrate the development of a multi-resistance reference sample for calibrating resistance measurements in conductive probe atomic force microscopy (C-AFM) covering the range from 100 Ω to 100 GΩ. We present a comprehensive protocol for in situ calibration of the whole measurement circuit encompassing the tip, the current sensing device, and the system controller. Furthermore, we show that our developed resistance reference enables the calibration of C-AFM with a combined relative uncertainty (given at one standard deviation) lower than 2.5% over an extended range from 10 kΩ to 100 GΩ and lower than 1% for a reduced range from 1 MΩ to 50 GΩ. Our findings break through the long-standing bottleneck in C-AFM measurements, providing a universal means for adopting calibrated resistance measurements at the nanoscale in the industrial and academic research and development sectors.
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Affiliation(s)
- François Piquemal
- Laboratoire national de métrologie et d’essais - LNE, Trappes, 78197 Cedex, France
| | - Khaled Kaja
- Laboratoire national de métrologie et d’essais - LNE, Trappes, 78197 Cedex, France
| | - Pascal Chrétien
- Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 91192, Gif-sur-Yvette, France
- Sorbonne Université, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 75250, Paris, France
| | - José Morán-Meza
- Laboratoire national de métrologie et d’essais - LNE, Trappes, 78197 Cedex, France
| | - Frédéric Houzé
- Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 91192, Gif-sur-Yvette, France
- Sorbonne Université, CNRS, Laboratoire de Génie Électrique et Électronique de Paris, 75250, Paris, France
| | - Christian Ulysse
- Centre de Nanosciences et de Nanotechnologies - C2N, Université Paris-Saclay, CNRS, UMR 9001, Palaiseau, 91120, France
| | - Abdelmounaim Harouri
- Centre de Nanosciences et de Nanotechnologies - C2N, Université Paris-Saclay, CNRS, UMR 9001, Palaiseau, 91120, France
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6
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Guido R, Mikolajick T, Schroeder U, Lomenzo PD. Role of Defects in the Breakdown Phenomenon of Al 1-xSc xN: From Ferroelectric to Filamentary Resistive Switching. NANO LETTERS 2023; 23:7213-7220. [PMID: 37523481 DOI: 10.1021/acs.nanolett.3c02351] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Aluminum scandium nitride (Al1-xScxN), with its large remanent polarization, is an attractive material for high-density ferroelectric random-access memories. However, the cycling endurance of Al1-xScxN ferroelectric capacitors is far below what can be achieved in other ferroelectric materials. Understanding the nature and dynamics of the breakdown mechanism is of the utmost importance for improving memory reliability. The breakdown phenomenon in ferroelectric Al1-xScxN is proposed to be an impulse thermal filamentary-driven process along preferential defective pathways. For the first time, stable and robust bipolar filamentary resistive switching in ferroelectric Al1-xScxN is reported. A hot atom damage defect generation model illustrates how filament formation and ferroelectric switching are connected. The model reveals the tendency of the ferroelectric wurtzite-type Al1-xScxN system to reach internal symmetry with bipolar electric field cycling. Defects generated from bipolar electric field cycling influence both the energy barrier between the polarization states and that required for the filament formation.
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Affiliation(s)
- Roberto Guido
- Namlab gGmbH, Nöthnitzer Strasse 64a, 01187 Dresden, Germany
| | - Thomas Mikolajick
- Namlab gGmbH, Nöthnitzer Strasse 64a, 01187 Dresden, Germany
- Chair of Nanoelectronics, TU Dresden, 01187 Dresden, Germany
| | - Uwe Schroeder
- Namlab gGmbH, Nöthnitzer Strasse 64a, 01187 Dresden, Germany
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7
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Li W, Guo Y, Luo Z, Wu S, Han B, Hu W, You L, Watanabe K, Taniguchi T, Alava T, Chen J, Gao P, Li X, Wei Z, Wang LW, Liu YY, Zhao C, Zhan X, Han ZV, Wang H. A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208266. [PMID: 36398430 DOI: 10.1002/adma.202208266] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 11/03/2022] [Indexed: 06/16/2023]
Abstract
Ferroelectricity, one of the keys to realize non-volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future multi-bit data storage applications, remains challenging. Here, a gate-programmable multi-state memory is shown by vertically assembling graphite, CuInP2 S6 , and MoS2 layers into a metal(M)-ferroelectric(FE)-semiconductor(S) architecture. The resulted devices seamlessly integrate the functionality of both FE-memristor (with ON-OFF ratios exceeding 105 and long-term retention) and metal-oxide-semiconductor field effect transistor (MOS-FET). Thus, it yields a prototype of gate tunable giant electroresistance with multi-levelled ON-states in the FE-memristor in the vertical vdW assembly. First-principles calculations further reveal that such behaviors originate from the specific band alignment between the FE-S interface. Our findings pave the way for the engineering of ferroelectricity-mediated memories in future implementations of 2D nanoelectronics.
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Affiliation(s)
- Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Shuhao Wu
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, 266000, P. R. China
| | - Bo Han
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Weijin Hu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Lu You
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Thomas Alava
- Université Grenoble Alpes, CEA, LETI, Grenoble, 38000, France
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, 266000, P. R. China
| | - Peng Gao
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Lin-Wang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Chengxin Zhao
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, P. R. China
- School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, 266000, P. R. China
| | - Zheng Vitto Han
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, P. R. China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, P. R. China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
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Winkler R, Zintler A, Petzold S, Piros E, Kaiser N, Vogel T, Nasiou D, McKenna KP, Molina‐Luna L, Alff L. Controlling the Formation of Conductive Pathways in Memristive Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201806. [PMID: 36073844 PMCID: PMC9685438 DOI: 10.1002/advs.202201806] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Resistive random-access memories are promising candidates for novel computer architectures such as in-memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials changes that allow access to two (digital), multiple (multilevel), or quasi-continuous (analog) resistive states. However, the stochastic nature of forming and switching the conductive pathway involves complex atomistic defect configurations resulting in considerable variability. This paper reveals that the intricate interplay of 0D and 2D defects can be engineered to achieve reproducible and controlled low-voltage formation of conducting filaments. The author find that the orientation of grain boundaries in polycrystalline HfOx is directly related to the required forming voltage of the conducting filaments, unravelling a neglected origin of variability. Based on the realistic atomic structure of grain boundaries obtained from ultra-high resolution imaging combined with first-principles calculations including local strain, this paper shows how oxygen vacancy segregation energies and the associated electronic states in the vicinity of the Fermi level govern the formation of conductive pathways in memristive devices. These findings are applicable to non-amorphous valence change filamentary type memristive device. The results demonstrate that a fundamental atomistic understanding of defect chemistry is pivotal to design memristors as key element of future electronics.
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Affiliation(s)
- Robert Winkler
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Alexander Zintler
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Stefan Petzold
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Eszter Piros
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Nico Kaiser
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Tobias Vogel
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Déspina Nasiou
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | | | - Leopoldo Molina‐Luna
- Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
| | - Lambert Alff
- Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnical University of DarmstadtAlarich‐Weiss‐Straße 264287DarmstadtGermany
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9
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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks. ELECTRONICS 2022. [DOI: 10.3390/electronics11030479] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
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10
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Buckwell M, Ng WH, Mannion DJ, Cox HRJ, Hudziak S, Mehonic A, Kenyon AJ. Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM. FRONTIERS IN NANOTECHNOLOGY 2021. [DOI: 10.3389/fnano.2021.699037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic applications due to their scalability, low-power operation and diverse functional behaviors. However, understanding the dynamics of individual filaments, and the surrounding material, is challenging, owing to the typically very large cross-sectional areas of test devices relative to the nanometer scale of individual filaments. In the present work, conductive atomic force microscopy is used to study the evolution of conductivity at the nanoscale in a fully CMOS-compatible silicon suboxide thin film. Distinct filamentary plasticity and background conductivity enhancement are reported, suggesting that device behavior might be best described by composite core (filament) and shell (background conductivity) dynamics. Furthermore, constant current measurements demonstrate an interplay between filament formation and rupture, resulting in current-controlled voltage spiking in nanoscale regions, with an estimated optimal energy consumption of 25 attojoules per spike. This is very promising for extremely low-power neuromorphic computation and suggests that the dynamic behavior observed in larger devices should persist and improve as dimensions are scaled down.
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Sosnov EA, Malkov AA, Malygin AA. Nanotechnology of Molecular Layering in Production of Inorganic and Hybrid Materials for Various Functional Purposes (a Review): I. History of the Development of the Molecular Layering Method. RUSS J APPL CHEM+ 2021. [DOI: 10.1134/s1070427221080024] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
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12
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Song T, Tan H, Bachelet R, Saint-Girons G, Fina I, Sánchez F. Impact of La Concentration on Ferroelectricity of La-Doped HfO 2 Epitaxial Thin Films. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:4809-4816. [PMID: 34841249 PMCID: PMC8613842 DOI: 10.1021/acsaelm.1c00672] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2021] [Accepted: 09/28/2021] [Indexed: 06/13/2023]
Abstract
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films.
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Affiliation(s)
- Tingfeng Song
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Huan Tan
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Romain Bachelet
- Univ.
Lyon, Ecole Centrale de Lyon, INSA Lyon, CPE Lyon, CNRS, Institut
des Nanotechnologies de Lyon - INL, UMR5270, Université Claude Bernard Lyon 1, 69134 Ecully, France
| | - Guillaume Saint-Girons
- Univ.
Lyon, Ecole Centrale de Lyon, INSA Lyon, CPE Lyon, CNRS, Institut
des Nanotechnologies de Lyon - INL, UMR5270, Université Claude Bernard Lyon 1, 69134 Ecully, France
| | - Ignasi Fina
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Florencio Sánchez
- Institut
de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
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13
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Hou K, Chen S, Zhou C, Nguyen LL, Dananjaya PA, Duchamp M, Bazan GC, Lew WS, Leong WL. Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule. NANO LETTERS 2021; 21:9262-9269. [PMID: 34719932 DOI: 10.1021/acs.nanolett.1c03180] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Conductive filaments (CFs) play a critical role in the mechanism of resistive random-access memory (ReRAM) devices. However, in situ detection and visualization of the precise location of CFs are still key challenges. We demonstrate for the first time the use of a π-conjugated molecule which can transform between its twisted and planar states upon localized Joule heating generated within filament regions, thus reflecting the locations of the underlying CFs. Customized patterns of CFs were induced and observed by the π-conjugated molecule layer, which confirmed the hypothesis. Additionally, statistical studies on filaments distribution were conducted to study the effect of device sizes and bottom electrode heights, which serves to enhance the understanding of switching behavior and their variability at device level. Therefore, this approach has great potential in aiding the development of ReRAM technology.
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Affiliation(s)
- Kunqi Hou
- School of Physical and Mathematical Sciences, Nanyang Technological University 21 Nanyang Link, 637371 Singapore
| | - Shuai Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University 50 Nanyang Avenue, 639798 Singapore
| | - Cheng Zhou
- Depertment of Chemistry, National University of Singapore 3 Science Drive 3, 117543 Singapore
| | - Linh Lan Nguyen
- School of Materials Science & Engineering, Nanyang Technological University 50 Nanyang Avenue, 639798 Singapore
| | - Putu Andhita Dananjaya
- School of Physical and Mathematical Sciences, Nanyang Technological University 21 Nanyang Link, 637371 Singapore
| | - Martial Duchamp
- School of Materials Science & Engineering, Nanyang Technological University 50 Nanyang Avenue, 639798 Singapore
| | - Guillermo C Bazan
- Depertment of Chemistry, National University of Singapore 3 Science Drive 3, 117543 Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University 21 Nanyang Link, 637371 Singapore
| | - Wei Lin Leong
- School of Electrical and Electronic Engineering, Nanyang Technological University 50 Nanyang Avenue, 639798 Singapore
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14
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Low-power emerging memristive designs towards secure hardware systems for applications in internet of things. NANO MATERIALS SCIENCE 2021. [DOI: 10.1016/j.nanoms.2021.01.001] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2022]
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15
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Kim YM, Lee J, Jeon DJ, Oh SE, Yeo JS. Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications. Appl Microsc 2021; 51:7. [PMID: 34037869 PMCID: PMC8155164 DOI: 10.1186/s42649-021-00056-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2021] [Accepted: 05/07/2021] [Indexed: 11/10/2022] Open
Abstract
Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.
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Affiliation(s)
- Young-Min Kim
- School of Integrated Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea.,Yonsei Institute of Convergence Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Jihye Lee
- School of Integrated Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea.,Yonsei Institute of Convergence Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Deok-Jin Jeon
- School of Integrated Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea.,Yonsei Institute of Convergence Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Si-Eun Oh
- Nano Science and Engineering, Integrated Science and Engineering Division, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea
| | - Jong-Souk Yeo
- School of Integrated Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea. .,Yonsei Institute of Convergence Technology, Yonsei University, 85, Songdogwahak-ro, Yeonsu-gu, Incheon, 21983, Republic of Korea.
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16
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Al-Mamun M, Orlowski M. Electron tunneling between vibrating atoms in a copper nano-filament. Sci Rep 2021; 11:7413. [PMID: 33795732 PMCID: PMC8016960 DOI: 10.1038/s41598-021-86603-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Accepted: 03/17/2021] [Indexed: 11/08/2022] Open
Abstract
Nanowires, atomic point contacts, and chains of atoms are one-dimensional nanostructures, which display size-dependent quantum effects in electrical and thermal conductivity. In this work a Cu nanofilament of a defined resistance and formed between a Cu and Pt electrode is heated remotely in a controlled way. Depending on the robustness of the conductive filament and the amount of heat transferred several resistance-changing effects are observed. In case of sufficiently fragile nanofilament exhibiting electrical quantum conductance effects and moderate heating applied to it, a dramatic increase of resistance is observed just after the completion of the heating cycle. However, when the filament is allowed to cool off, a spontaneous restoration of the originally set resistance of the filament is observed within less than couple tens of seconds. When the filament is sufficiently fragile or the heating too excessive, the filament is permanently ruptured, resulting in a high resistance of the cell. In contrast, for robust, low resistance filaments, the remote heating does not affect the resistance. The spontaneous restoration of the initial resistance value is explained by electron tunneling between neighboring vibrating Cu atoms. As the vibrations of the Cu atoms subside during the cooling off period, the electron tunneling between the Cu atoms becomes more likely. At elevated temperatures, the average tunneling distance increases, leading to a sharp decrease of the tunneling probability and, consequently, to a sharp increase in transient resistance.
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Affiliation(s)
- Mohammad Al-Mamun
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, 24061, USA
| | - Marius Orlowski
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA, 24061, USA.
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17
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Almadhoun MN, Speckbacher M, Olsen BC, Luber EJ, Sayed SY, Tornow M, Buriak JM. Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon. NANO LETTERS 2021; 21:2666-2674. [PMID: 33689381 DOI: 10.1021/acs.nanolett.1c00539] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p+-Si) to form Ga/GaOx/SiOx/p+-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 108 and retain the ON and OFF resistive states for up to 105 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.
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Affiliation(s)
- Mahmoud N Almadhoun
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
| | - Maximilian Speckbacher
- Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany
| | - Brian C Olsen
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
| | - Erik J Luber
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
| | - Sayed Youssef Sayed
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
| | - Marc Tornow
- Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany
- Center for NanoScience (CeNS), Ludwig-Maximilians-University, 80539 Munich, Germany
- Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), 80686 Munich, Germany
| | - Jillian M Buriak
- Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada
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18
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Kurnia F, Seidel J, Hart JN, Valanoor N. Optical Tuning of Resistance Switching in Polycrystalline Gallium Phosphide Thin Films. J Phys Chem Lett 2021; 12:2327-2333. [PMID: 33651940 DOI: 10.1021/acs.jpclett.1c00163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. The formation of conductive channels along the grain boundaries is attributed to the presence of point defects and structural disorder, which provide the ideal environment to enable the filamentary switching process. Both first-principles calculations and UV-vis and photoluminescence spectroscopy strongly point to the possibility of mid-gap electronic states in the polycrystalline GaP film due to such defects. To study the photonic excitation, photoconductive atomic force microscopy (phAFM) measurement is conducted. We observe photocurrents even for incident photon energies lower than the band gap, consistent with the presence of mid-gap electronic states; the photocurrents increase in direct proportion to the incident photon energy with a concomitant decrease in the filament resistance. This demonstrates GaP directly integrated on Si can be a promising photonic resistive switching materials system.
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Affiliation(s)
- Fran Kurnia
- School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia
| | - Judy N Hart
- School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia
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19
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Chen F, Ma T, Zhang T, Zhang Y, Huang H. Atomic-Level Charge Separation Strategies in Semiconductor-Based Photocatalysts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005256. [PMID: 33501728 DOI: 10.1002/adma.202005256] [Citation(s) in RCA: 107] [Impact Index Per Article: 35.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2020] [Revised: 09/11/2020] [Indexed: 06/12/2023]
Abstract
Semiconductor-based photocatalysis as a productive technology furnishes a prospective solution to environmental and renewable energy issues, but its efficiency greatly relies on the effective bulk and surface separation of photoexcited charge carriers. Exploitation of atomic-level strategies allows in-depth understanding on the related mechanisms and enables bottom-up precise design of photocatalysts, significantly enhancing photocatalytic activity. Herein, the advances on atomic-level charge separation strategies toward developing robust photocatalysts are highlighted, elucidating the fundamentals of charge separation and transfer processes and advanced probing techniques. The atomic-level bulk charge separation strategies, embodied by regulation of charge movement pathway and migration dynamic, boil down to shortening the charge diffusion distance to the atomic-scale, establishing atomic-level charge transfer channels, and enhancing the charge separation driving force. Meanwhile, regulating the in-plane surface structure and spatial surface structure are summarized as atomic-level surface charge separation strategies. Moreover, collaborative strategies for simultaneous manipulation of bulk and surface photocharges are also introduced. Finally, the existing challenges and future prospects for fabrication of state-of-the-art photocatalysts are discussed on the basis of a thorough comprehension of atomic-level charge separation strategies.
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Affiliation(s)
- Fang Chen
- Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing, 100083, China
| | - Tianyi Ma
- Discipline of Chemistry, School of Environmental & Life Sciences, The University of Newcastle (UON), Callaghan, NSW, 2308, Australia
| | - Tierui Zhang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yihe Zhang
- Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing, 100083, China
| | - Hongwei Huang
- Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing, 100083, China
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20
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Carlos E, Branquinho R, Martins R, Kiazadeh A, Fortunato E. Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004328. [PMID: 33314334 DOI: 10.1002/adma.202004328] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2020] [Revised: 09/08/2020] [Indexed: 06/12/2023]
Abstract
Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra-low power and high-density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up-scale production. Solution-processing methods have been improved, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures. Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics. In this review, a brief history of non-volatile memories is highlighted as well as the present status of solution-based metal oxide resistive random-access memory (S-RRAM). Then, a focus on describing the solution synthesis parameters of S-RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S-RRAM that will allow their large-area manufacturing. Finally, the figures of merit and the main challenges in S-RRAMs are discussed and future trends are proposed.
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Affiliation(s)
- Emanuel Carlos
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Rita Branquinho
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Rodrigo Martins
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Asal Kiazadeh
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
| | - Elvira Fortunato
- CENIMAT/i3N Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia (FCT), Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA, Caparica, 2829-516, Portugal
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21
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Li P, Wang D, Zhang Z, Guo Y, Jiang L, Xu C. Room-Temperature, Solution-Processed SiO x via Photochemistry Approach for Highly Flexible Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56186-56194. [PMID: 33231429 DOI: 10.1021/acsami.0c16556] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Due to its high versatility and cost-effectiveness, solution process has a remarkable advantage over physical or chemical vapor deposition (PVD/CVD) methods in developing flexible resistive random-access memory (RRAM) devices. However, the reported solution-processed binary oxides, the most promising active layer materials for their compatibility with silicon-based semiconductor technology, commonly require high-temperature annealing (>145 °C) and the RRAMs based on them encounter insufficient flexibility. In this work, an amorphous and uniform SiOx active layer was prepared by irradiating an inorganic polymer, perhydropolysilazane, with a vacuum ultraviolet of 172 nm at room temperature. The corresponding RRAM showed typical bipolar resistance switching with a forming-free behavior. The device on polyimide film exhibited outstanding flexibility with a minimum bending radius of 0.5 mm, and no performance degradation was observed after bending 2000 times with a radius of 2.3 mm, which is the best among the reported solution-processed binary oxide-based RRAMs and can even rival the performance of PVD/CVD-based devices. This room-temperature solution process and the afforded highly flexible RRAMs have vast prospects for application in smart wearable electronics.
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Affiliation(s)
- Pengfei Li
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China
| | - Dan Wang
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China
| | - Zongbo Zhang
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yunlong Guo
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Lang Jiang
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Caihong Xu
- Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100149, People's Republic of China
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22
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Kubicek J, Fiedorova K, Vilimek D, Cerny M, Penhaker M, Janura M, Rosicky J. Recent Trends, Construction and Applications of Smart Textiles and Clothing for Monitoring of Health Activity: A Comprehensive Multidisciplinary Review. IEEE Rev Biomed Eng 2020; 15:36-60. [PMID: 33301410 DOI: 10.1109/rbme.2020.3043623] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Abstract
In the area of biomedical signal monitoring, wearable electronics represents a dynamically growing field with a significant impact on the market of commercial products of biomedical signal monitoring and acquisition, as well as consumer electronic for vital functions monitoring. Since the electrodes are perceived as one of the most important part of the biomedical signal monitoring, they have been one of the most frequent subjects in the research community. Electronic textile (e-textile), also called smart textile represents a modern trend in the wearable electronics, integrating of functional materials with common clothing with the goal to realize the devices, which include sensors, antennas, energy harvesters and advanced textiles for self-cooling and heating. The area of textile electrodes and e-textile is perceived as a multidisciplinary field, integrating material engineering, chemistry, and biomedical engineering. In this review, we provide a comprehensive view on this area. This multidisciplinary review integrates the e-textile characteristics, materials and manufacturing of the textile electrodes, noise influence on the e-textiles performance, and mainly applications of the textile electrodes for biomedical signal monitoring and acquisition, including pressure sensors, electrocardiography, electromyography, electroencephalography and electrooculography monitoring.
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23
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Wu X, Ge R, Akinwande D, Lee JC. Understanding of multiple resistance states by current sweeping in MoS 2-based non-volatile memory devices. NANOTECHNOLOGY 2020; 31:465206. [PMID: 32647100 DOI: 10.1088/1361-6528/aba46a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves. Multiple transition steps have been observed in the SET process of MoS2-based resistance switching devices. The different behaviors of transition steps were attributed to the number of defects or vacancies associated with the switching phenomenon, which is consistent with the previously reported conductive-bridge-like model for 2D atomristors. This work provides an approach using current sweeping to precisely characterize the resistance switching effect and inspires further research to optimize the defect distribution in 2D materials for the applications in multi-bit non-volatile memory and neuromorphic computing.
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Affiliation(s)
- Xiaohan Wu
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States of America
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24
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Abstract
The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.
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25
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Wu Z, Zhao X, Yang Y, Wang W, Zhang X, Wang R, Cao R, Liu Q, Banerjee W. Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices. NANOSCALE ADVANCES 2019; 1:3753-3760. [PMID: 36133528 PMCID: PMC9418922 DOI: 10.1039/c9na00409b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2019] [Accepted: 08/05/2019] [Indexed: 05/13/2023]
Abstract
Resistive switching devices based on binary transition metal oxides have been widely investigated. However, these devices invariably manifest threshold switching characteristics when the active metal electrode is silver, the dielectric layer is hafnium oxide and platinum is used as the bottom electrode, and have a relatively low compliance current (<100 μA). Here we developed a way to transform an Ag-based hafnium oxide selector into quantum-contact originated memory with a low compliance current, in which a graphene interface barrier layer is inserted between the silver electrode and hafnium oxide layer. Devices with structure Ag/HfO x /Pt acts as a bipolar selector with a high selectivity of >108 and sub-threshold swing of ∼1 mV dec-1. After introducing a graphene interface barrier, high stress dependent (forming at +3 V) formation of localized conducting filaments embodies stable nonvolatile memory characteristics with low set/reset voltages (<±1.0 V), low reset power (6 μW) and multi-level potential. Grain boundaries of the graphene interface control the type of switching in the devices. A good barrier can switch the Ag-based volatile selector into Ag-based nonvolatile memory.
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Affiliation(s)
- Zuheng Wu
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Xiaolong Zhao
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
| | - Yang Yang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
| | - Wei Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
| | - Xumeng Zhang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Rui Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Rongrong Cao
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Qi Liu
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Writam Banerjee
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH) Pohang 790-784 Republic of Korea
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26
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Vescio G, Martín G, Crespo-Yepes A, Claramunt S, Alonso D, López-Vidrier J, Estradé S, Porti M, Rodríguez R, Peiró F, Cornet A, Cirera A, Nafría M. Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO 2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23659-23666. [PMID: 31180626 DOI: 10.1021/acsami.9b01731] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Low-power, high-performance metal-insulator-metal (MIM) non-volatile resistive memories based on HfO2 high- k dielectric are fabricated using a drop-on-demand inkjet printing technique as a low-cost and eco-friendly method. The characteristics of resistive switching of Pt (bottom)/HfO2/Ag (top) stacks on Si/SiO2 substrates are investigated in order to study the bottom electrode's interaction with the HfO2 dielectric layer and the resulting effects on resistive switching. The devices show low Set and Reset voltages, high ON/OFF current ratio, and relatively low switching current (∼1 μA), which are comparable to the characteristics of current commercial CMOS memories. In order to understand the resistive switching mechanism, direct structural observation is carried out by field-emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM) on cross-sectioned samples prepared by focused ion beam (FIB). In addition, electron energy loss spectroscopy (EELS) inspections discard a silver electro-migration effect.
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Affiliation(s)
- Giovanni Vescio
- MIND, Electronic and Biomedical Engineering Department , Universitat de Barcelona , 08028 , Barcelona Spain
| | - Gemma Martín
- MIND, Electronic and Biomedical Engineering Department , Universitat de Barcelona , 08028 , Barcelona Spain
| | - Albert Crespo-Yepes
- Electronic Engineering Department , Universitat Autònoma de Barcelona , 08193 Barcelona , Spain
| | - Sergi Claramunt
- Electronic Engineering Department , Universitat Autònoma de Barcelona , 08193 Barcelona , Spain
| | - Daniel Alonso
- Electronic Engineering Department , Universitat Autònoma de Barcelona , 08193 Barcelona , Spain
| | - Julian López-Vidrier
- IMTEK, Faculty of Engineering , Albert-Ludwigs-Universität Freiburg , 79110 Freiburg , Germany
| | - Sonia Estradé
- MIND, Electronic and Biomedical Engineering Department , Universitat de Barcelona , 08028 , Barcelona Spain
| | - Marc Porti
- Electronic Engineering Department , Universitat Autònoma de Barcelona , 08193 Barcelona , Spain
| | - Rosana Rodríguez
- Electronic Engineering Department , Universitat Autònoma de Barcelona , 08193 Barcelona , Spain
| | - Francesca Peiró
- Institute of Nanoscience and Nanotechnology (IN2UB) , Universitat de Barcelona , 08028 Barcelona , Spain
| | - Albert Cornet
- MIND, Electronic and Biomedical Engineering Department , Universitat de Barcelona , 08028 , Barcelona Spain
| | - Albert Cirera
- Institute of Nanoscience and Nanotechnology (IN2UB) , Universitat de Barcelona , 08028 Barcelona , Spain
| | - Montserrat Nafría
- Electronic Engineering Department , Universitat Autònoma de Barcelona , 08193 Barcelona , Spain
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27
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Kim DS, Yun YD, Kim JS, Kim YB, Jung SH, Deshpande NG, Lee HS, Cho HK. Electrochemically Assembled Cu 2O Nanoparticles Using Crystallographically Anisotropic Functional Metal Ions and Highly Expeditious Resistive Switching via Nanoparticle Coarsening. ACS NANO 2019; 13:5987-5998. [PMID: 31083962 DOI: 10.1021/acsnano.9b02108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We have developed an artificially controllable strategy of an electrodeposition process adequate for resistive random-access memory (ReRAM) applications of binary Cu2O. Typically, the precise control of OH- ion concentration (the intermediate supplier of oxygen ions) at the electrode's surface decides the overall reaction rate of the Cu2O. Here, the suggested Pb and Sb metal additives preferentially contribute to the consumption of OH- ions and the supply of OH- ions, respectively, during the Cu2O electrochemical reaction so that the final products are the (200) preferential quadrangular pyramids and the (111) preferential triangular pyramids. Interestingly, the coexistence of Sb/Pb precursors in the Cu electrolytes results in extraordinarily decreased reaction rate from the opposite action of OH- ion utilization as well as intense progressive growth behavior, and the resultant Cu2O films consist of crystallized small-size nanoparticles (NPs) in an amorphous-like matrix. In the case of ReRAM applications, while the polycrystalline film induces irregular device performance and the amorphous layer shows an easily irreparable electrical breakdown, our NP-assembled Cu2O films from Pb/Sb metal ions reveal the formation of a conduction bridge via phase change to a crystalline filament with no need for forming voltage and with superior electrical stability. It is attributed to the coalescence of crystal NPs into large grains during the set/reset cycle process for the heat dissipation of Joule heating. The Cu2O sample prepared with a 3 mM Sb + 3 mM Pb mixture solution exhibits forming-free ReRAM devices with high on/off resistance ratios of 1.2 × 104 and long-term electrical/thermal stability.
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Affiliation(s)
- Dong Su Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Young Dae Yun
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Joo Sung Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Young Been Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Sung Hyeon Jung
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Nishad G Deshpande
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
| | - Ho Seong Lee
- School of Materials Science and Engineering , Kyungpook National University 80 Daehak-ro , Buk-gu, Daegu 41566 , Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066, Seobu-ro , Jangan-gu, Suwon-si , Gyeonggi-do 16419 , Republic of Korea
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28
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Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device. NANOMATERIALS 2019; 9:nano9020289. [PMID: 30791401 PMCID: PMC6410279 DOI: 10.3390/nano9020289] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2018] [Revised: 02/12/2019] [Accepted: 02/14/2019] [Indexed: 11/17/2022]
Abstract
Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.
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29
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Srivastava S, Dey P, Asapu S, Maiti T. Role of GO and r-GO in resistance switching behavior of bilayer TiO 2 based RRAM. NANOTECHNOLOGY 2018; 29:505702. [PMID: 30211700 DOI: 10.1088/1361-6528/aae135] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Graphene-based resistance random access memory devices (RRAMs) have shown promise as a suitable replacement for flash memories, owing to their fast switching speed, low programming voltage, better scalability and great reliability. Furthermore, recent research works have shown bi-layer RRAM devices exhibiting better performance along the same parameters, where titania is one of the most commonly used materials. In the present work, we have studied the resistance switching behavior in a bi-layer RRAM device structure of TiO2 with graphene oxide (GO) and reduced graphene oxide (rGO). Switching mechanism in these devices has been investigated by detailed experimental characterization in conjunction with a finite element modeling (FEM) simulation. A dual conical conductive filament has been used in the present work, based on the modeling of the electroforming process carried out by FEM. It has been demonstrated that for the GO/TiO2 based hybrid RRAM device structure, GO acts as an active filament formation layer, whereas in the rGO/TiO2 bi-layer structure, rGO acts as a mere electrode.
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Affiliation(s)
- Siddharth Srivastava
- Plasmonics and Perovskites Laboratory, Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur, UP 208016, India
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30
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Mehonic A, Shluger AL, Gao D, Valov I, Miranda E, Ielmini D, Bricalli A, Ambrosi E, Li C, Yang JJ, Xia Q, Kenyon AJ. Silicon Oxide (SiO x ): A Promising Material for Resistance Switching? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801187. [PMID: 29957849 DOI: 10.1002/adma.201801187] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2018] [Revised: 04/30/2018] [Indexed: 06/08/2023]
Abstract
Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which-primarily transition metal oxides-are currently being investigated as complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.
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Affiliation(s)
- Adnan Mehonic
- Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK
| | - Alexander L Shluger
- Department of Physics and Astronomy, UCL, Gower Street, London, WC1E 6BT, UK
| | - David Gao
- Department of Physics and Astronomy, UCL, Gower Street, London, WC1E 6BT, UK
| | - Ilia Valov
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074, Aachen, Germany
| | - Enrique Miranda
- Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona, 08193, Bellaterra, Spain
| | - Daniele Ielmini
- Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan, 20133, Italy
| | - Alessandro Bricalli
- Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan, 20133, Italy
| | - Elia Ambrosi
- Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan, 20133, Italy
| | - Can Li
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Qiangfei Xia
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Anthony J Kenyon
- Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK
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31
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Younis A, Li S. Microscopic investigations of switching phenomenon in memristive systems: a mini review. RSC Adv 2018; 8:28763-28774. [PMID: 35542462 PMCID: PMC9084341 DOI: 10.1039/c8ra05340e] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2018] [Accepted: 07/24/2018] [Indexed: 11/21/2022] Open
Abstract
Resistive switching memories have been regarded as one of the most up and coming memory systems and researchers have shown great interest in them because of their simple structure, high speed and low fabrication cost. These memory systems also have great potential for scaling, however, this has been difficult to achieve without detailed understanding of underlying switching mechanisms. Meanwhile, scaling down could also raise reliability concerns in its performance. This work provides an overview of various switching mechanisms and their investigations at nanoscale levels using high resolution microscopy techniques. In this mini review, the main focus was to understand the working mechanism derived from the so-called filament model. The high resolution conductive atomic force microscope, transmission electron microscope and scanning electron microscopes are the best tools available to investigate the dynamics of filamentary switching. Several issues with the existing techniques are also highlighted.
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Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales Sydney 2052 NSW Australia
| | - Sean Li
- School of Materials Science and Engineering, University of New South Wales Sydney 2052 NSW Australia
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32
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Filatov D, Kazantseva I, Antonov D, Antonov I, Shenina M, Pavlov D, Gorshkov O. Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles. SCANNING 2018; 2018:5489596. [PMID: 30057656 PMCID: PMC6051002 DOI: 10.1155/2018/5489596] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2018] [Revised: 03/12/2018] [Accepted: 04/26/2018] [Indexed: 06/08/2023]
Abstract
We report on the investigation of the resistive switching (RS) in the ultrathin (≈5 nm in thickness) yttria-stabilized zirconia (YSZ) films with single layers of Au nanoparticles (NPs) by conductive atomic force microscopy (CAFM). Besides the butterfly-type hysteresis loops in the current-voltage (I-V) curves of the contact of the CAFM probe to the investigated film surface corresponding to the bipolar RS, the negative differential resistance (NDR) has been observed in the I-V curves of the AFM probe contact to the YSZ films with Au NPs in the conductive ("ON") state. The NDR has been related to the resonant tunneling of electrons through the size-quantized energy states in the ultrafine (1 to 2 nm in diameter) Au NPs built in the conductive filaments in the YSZ films.
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Affiliation(s)
- Dmitry Filatov
- Research and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
| | - Inga Kazantseva
- Department of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
| | - Dmitry Antonov
- Research and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
| | - Ivan Antonov
- Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
| | - Maria Shenina
- Research and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
| | - Dmitry Pavlov
- Department of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
| | - Oleg Gorshkov
- Research and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
- Department of Physics, Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Ave., Nizhny Novgorod 603950, Russia
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33
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Yang M, Cho D, Kim J, Shin N, Shekhar S, Hong S. Nanoscale "Noise-Source Switching" during the Optoelectronic Switching of Phase-Separated Polymer Nanocomposites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800885. [PMID: 29806136 DOI: 10.1002/smll.201800885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2018] [Revised: 04/13/2018] [Indexed: 06/08/2023]
Abstract
A method is developed to directly map nanoscale "noise-source switching" phenomena during the optoelectronic switching of phase-separated polymer nanocomposites of tetrathiafulvalene (TTF) and phenyl-C61 -butyric acid methyl ester (PCBM) molecules dispersed in a polystyrene (PS) matrix. In the method, electrical current and noise maps of the nanocomposite film are recorded using a conducting nanoprobe, enabling the mapping of a conductivity and a noise-source density. The results provide evidence for a repeated modulation in noise sources, a "noise-source switching," in each stage of a switching cycle. Interestingly, when the nanocomposite is "set" by a high bias, insulating PS-rich phases shows a drastic decrease in a noise-source density which becomes lower than that of conducting TTF-PCBM-rich phases. This can be attributed to a trap filling by charge carriers generated from a TTF (donor)-PCBM (acceptor) complex. In addition, when the film is exposed to UV, an optical switching occurs due to chemical reactions which lead to irreversible changes on the noise-source density and conductivity. The method provides a new insight on noise-source activities during the optoelectronic switching of polymer nanocomposites and thus can be a powerful tool for basic noise research and applications in organic memory devices.
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Affiliation(s)
- Myungjae Yang
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Duckhyung Cho
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jeongsu Kim
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Narae Shin
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Shashank Shekhar
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Seunghun Hong
- Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
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34
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Banerjee W, Cai WF, Zhao X, Liu Q, Lv H, Long S, Liu M. Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO 2/Pt RRAM. NANOSCALE 2017; 9:18908-18917. [PMID: 29177343 DOI: 10.1039/c7nr06628g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
The sneak path problem is one of the major hindrances to the application of high-density crossbar resistive random access memory; however, complementary resistive switching (CRS) is an effective solution to this problem. The co-existence of resistive switching (RS) and CRS is possible within the same device. Therefore, a precise control is highly required for the successful utilization of different modes. In this study, we have demonstrated an effective way to control both switching modes in a simple HfO2-based crossbar device. The interchange between RS and CRS modes is possible, based on the intrinsic anionic rearrangement by controlling the extrinsic stimulation, either in the form of voltage or in the form of current. In particular, a highly nonlinear CRS mode is reported, in which the nonlinearity is almost 100 times greater than in the RS mode, which is achieved at a high temperature of 150 °C. The procedure reported in this study may be useful for the other resistive memory systems.
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Affiliation(s)
- Writam Banerjee
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, No. 3 BeiTuCheng West Road, ChaoYang District, Beijing 100029, China.
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35
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Jiang L, Shi Y, Hui F, Tang K, Wu Q, Pan C, Jing X, Uppal H, Palumbo F, Lu G, Wu T, Wang H, Villena MA, Xie X, McIntyre PC, Lanza M. Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2017; 9:39758-39770. [PMID: 29039199 DOI: 10.1021/acsami.7b10948] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Insulating films are essential in multiple electronic devices because they can provide essential functionalities, such as capacitance effects and electrical fields. Two-dimensional (2D) layered materials have superb electronic, physical, chemical, thermal, and optical properties, and they can be effectively used to provide additional performances, such as flexibility and transparency. 2D layered insulators are called to be essential in future electronic devices, but their reliability, degradation kinetics, and dielectric breakdown (BD) process are still not understood. In this work, the dielectric breakdown process of multilayer hexagonal boron nitride (h-BN) is analyzed on the nanoscale and on the device level, and the experimental results are studied via theoretical models. It is found that under electrical stress, local charge accumulation and charge trapping/detrapping are the onset mechanisms for dielectric BD formation. By means of conductive atomic force microscopy, the BD event was triggered at several locations on the surface of different dielectrics (SiO2, HfO2, Al2O3, multilayer h-BN, and monolayer h-BN); BD-induced hillocks rapidly appeared on the surface of all of them when the BD was reached, except in monolayer h-BN. The high thermal conductivity of h-BN combined with the one-atom-thick nature are genuine factors contributing to heat dissipation at the BD spot, which avoids self-accelerated and thermally driven catastrophic BD. These results point to monolayer h-BN as a sublime dielectric in terms of reliability, which may have important implications in future digital electronic devices.
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Affiliation(s)
- Lanlan Jiang
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
| | - Yuanyuan Shi
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
| | - Fei Hui
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | | | - Qian Wu
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
| | - Chengbin Pan
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
| | - Xu Jing
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
- Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States
| | - Hasan Uppal
- Microelectronics and Nanostructures, The University of Manchester , Sackville Street, Manchester M13 9PL, U.K
| | - Felix Palumbo
- National Scientific and Technical Research Council (CONICET), UTN-CNEA , Godoy Cruz 2290, Buenos Aires, Argentina
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , 865 Changning Road, Shanghai 200050, China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , 865 Changning Road, Shanghai 200050, China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , 865 Changning Road, Shanghai 200050, China
| | - Marco A Villena
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , 865 Changning Road, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University , 319 Yueyang Road, Shanghai 201210, China
| | | | - Mario Lanza
- Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience & Technology, Soochow University , 199 Ren-Ai Road, Suzhou 215123, China
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36
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Zhao X, Liu S, Niu J, Liao L, Liu Q, Xiao X, Lv H, Long S, Banerjee W, Li W, Si S, Liu M. Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 28234422 DOI: 10.1002/smll.201603948] [Citation(s) in RCA: 45] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2016] [Revised: 01/08/2017] [Indexed: 05/16/2023]
Abstract
Conductive-bridge random access memory (CBRAM) is considered a strong contender of the next-generation nonvolatile memory technology. Resistive switching (RS) behavior in CBRAM is decided by the formation/dissolution of nanoscale conductive filament (CF) inside RS layer based on the cation injection from active electrode and their electrochemical reactions. Remarkably, RS is actually a localized behavior, however, cation injects from the whole area of active electrode into RS layer supplying excessive cation beyond the requirement of CF formation, leading to deterioration of device uniformity and reliability. Here, an effective method is proposed to localize cation injection into RS layer through the nanohole of inserted ion barrier between active electrode and RS layer. Taking an impermeable monolayer graphene as ion barrier, conductive atomic force microscopy results directly confirm that CF formation is confined through the nanohole of graphene due to the localized cation injection. Compared with the typical Cu/HfO2 /Pt CBRAM device, the novel Cu/nanohole-graphene/HfO2 /Pt device shows improvement of uniformity, endurance, and retention characteristics, because the cation injection is limited by the nanohole graphene. Scaling the nanohole of ion barrier down to several nanometers, the single-CF-based CBRAM device with high performance is expected to achieve by confining the cation injection at the atomic scale.
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Affiliation(s)
- Xiaolong Zhao
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan, 430072, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Sen Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Jiebin Niu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Lei Liao
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan, 430072, China
| | - Qi Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Xiangheng Xiao
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan, 430072, China
| | - Hangbing Lv
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Shibing Long
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Writam Banerjee
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
| | - Wenqing Li
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan, 430072, China
| | - Shuyao Si
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan, 430072, China
| | - Ming Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China
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37
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Gorbunov AV, Garcia Iglesias M, Guilleme J, Cornelissen TD, Roelofs WSC, Torres T, González-Rodríguez D, Meijer EW, Kemerink M. Ferroelectric self-assembled molecular materials showing both rectifying and switchable conductivity. SCIENCE ADVANCES 2017; 3:e1701017. [PMID: 28975150 PMCID: PMC5621973 DOI: 10.1126/sciadv.1701017] [Citation(s) in RCA: 37] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2017] [Accepted: 09/06/2017] [Indexed: 06/07/2023]
Abstract
Advanced molecular materials that combine two or more physical properties are typically constructed by combining different molecules, each being responsible for one of the properties required. Ideally, single molecules could take care of this combined functionality, provided they are self-assembled correctly and endowed with different functional subunits whose strong electronic coupling may lead to the emergence of unprecedented and exciting properties. We present a class of disc-like semiconducting organic molecules that are functionalized with strong dipolar side groups. Supramolecular organization of these materials provides long-range polar order that supports collective ferroelectric behavior of the side groups as well as charge transport through the stacked semiconducting cores. The ferroelectric polarization in these supramolecular polymers is found to couple to the charge transport and leads to a bulk conductivity that is both switchable and rectifying. An intuitive model is developed and found to quantitatively reproduce the experimental observations. In a larger perspective, these results highlight the possibility of modulating material properties using the large electric fields associated with ferroelectric polarization.
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Affiliation(s)
- Andrey V. Gorbunov
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Miguel Garcia Iglesias
- Institute of Complex Molecular Systems, Laboratory of Macromolecular and Organic Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - Julia Guilleme
- Departamento de Química Orgánica (C-I), Facultad de Ciencias, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain
| | - Tim D. Cornelissen
- Complex Materials and Devices, Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden
| | - W. S. Christian Roelofs
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Tomas Torres
- Departamento de Química Orgánica (C-I), Facultad de Ciencias, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain
- IMDEA Nanociencia, c/ Faraday 9, 28049 Madrid, Spain
| | - David González-Rodríguez
- Departamento de Química Orgánica (C-I), Facultad de Ciencias, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain
| | - E. W. Meijer
- Institute of Complex Molecular Systems, Laboratory of Macromolecular and Organic Chemistry, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
| | - Martijn Kemerink
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
- Complex Materials and Devices, Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden
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38
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Niu G, Schubert MA, Sharath SU, Zaumseil P, Vogel S, Wenger C, Hildebrandt E, Bhupathi S, Perez E, Alff L, Lehmann M, Schroeder T, Niermann T. Electron holography on HfO 2/HfO 2-x bilayer structures with multilevel resistive switching properties. NANOTECHNOLOGY 2017; 28:215702. [PMID: 28462907 DOI: 10.1088/1361-6528/aa6cd9] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.
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Affiliation(s)
- G Niu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China. IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
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39
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Zhang M, Long S, Li Y, Liu Q, Lv H, Miranda E, Suñé J, Liu M. Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device. NANOSCALE RESEARCH LETTERS 2016; 11:269. [PMID: 27389343 PMCID: PMC4936978 DOI: 10.1186/s11671-016-1484-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2016] [Accepted: 05/13/2016] [Indexed: 06/06/2023]
Abstract
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). In this study, a statistical evaluation method is developed to analyze the filament structure evolution process in the reset operation of Cu/HfO2/Pt RRAM device. This method is based on a specific functional relationship between the Weibull slopes of reset parameters' distributions and the CF resistance (R on). The CF of the Cu/HfO2/Pt device is demonstrated to be ruptured abruptly, and the CF structure of the device has completely degraded in the reset point. Since no intermediate states are generated in the abrupt reset process, it is quite favorable for the reliable and stable one-bit operation in RRAM device. Finally, on the basis of the cell-based analytical thermal dissolution model, a Monte Carlo (MC) simulation is implemented to further verify the experimental results. This work provides inspiration for RRAM reliability and performance design to put RRAM into practical application.
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Affiliation(s)
- Meiyun Zhang
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210023, China
| | - Shibing Long
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China.
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210023, China.
| | - Yang Li
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210023, China
| | - Qi Liu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210023, China
| | - Hangbing Lv
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210023, China
| | - Enrique Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
| | - Jordi Suñé
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
| | - Ming Liu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210023, China
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40
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Ji Y, Hui F, Shi Y, Iglesias V, Lewis D, Niu J, Long S, Liu M, Hofer A, Frammelsberger W, Benstetter G, Scheuermann A, McIntyre PC, Lanza M. Characterization of the photocurrents generated by the laser of atomic force microscopes. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2016; 87:083703. [PMID: 27587127 DOI: 10.1063/1.4960597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.
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Affiliation(s)
- Yanfeng Ji
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China
| | - Fei Hui
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China
| | - Yuanyuan Shi
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China
| | - Vanessa Iglesias
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - David Lewis
- Nanonics Imaging, Har Hotzvim, Jerusalem 91487, Israel
| | - Jiebin Niu
- Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Shibing Long
- Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Ming Liu
- Laboratory of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Alexander Hofer
- Deggendorf Institute of Technology, Edlmairstr. 6+8, 94469 Deggendorf, Germany
| | | | - Guenther Benstetter
- Deggendorf Institute of Technology, Edlmairstr. 6+8, 94469 Deggendorf, Germany
| | - Andrew Scheuermann
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
| | - Paul C McIntyre
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
| | - Mario Lanza
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123, China
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Cai Y, Tan J, YeFan L, Lin M, Huang R. A flexible organic resistance memory device for wearable biomedical applications. NANOTECHNOLOGY 2016; 27:275206. [PMID: 27242345 DOI: 10.1088/0957-4484/27/27/275206] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Parylene is a Food and Drug Administration (FDA)-approved material which can be safely used within the human body and it is also offers chemically inert and flexible merits. Here, we present a flexible parylene-based organic resistive random access memory (RRAM) device suitable for wearable biomedical application. The proposed device is fabricated through standard lithography and pattern processes at room temperature, exhibiting the feasibility of integration with CMOS circuits. This organic RRAM device offers a high storage window (>10(4)), superior retention ability and immunity to disturbing. In addition, brilliant mechanical and electrical stabilities of this device are demonstrated when under harsh bending (bending cycle >500, bending radius <10 mm). Finally, the underlying mechanism for resistance switching of this kind of device is discussed, and metallic conducting filament formation and annihilation related to oxidization/redox of Al and Al anions migrating in the parylene layer can be attributed to resistance switching in this device. These advantages reveal the significant potential of parylene-based flexible RRAM devices for wearable biomedical applications.
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Affiliation(s)
- Yimao Cai
- Institute of Microelectronics, Peking University, 100871, Beijing People's Republic of China. Innovation Center for Microelectronics and Integrated System, Peking University, 100871, Beijing People's Republic of China
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42
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Niu G, Kim HD, Roelofs R, Perez E, Schubert MA, Zaumseil P, Costina I, Wenger C. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition. Sci Rep 2016; 6:28155. [PMID: 27312225 PMCID: PMC4911574 DOI: 10.1038/srep28155] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2016] [Accepted: 05/27/2016] [Indexed: 12/04/2022] Open
Abstract
With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.
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Affiliation(s)
- Gang Niu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
- IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
| | - Hee-Dong Kim
- Department of Electronics, Information & Communication Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747, Korea
| | | | - Eduardo Perez
- IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
| | - Markus Andreas Schubert
- IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
| | - Peter Zaumseil
- IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
| | - Ioan Costina
- IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
| | - Christian Wenger
- IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
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43
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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance. Sci Rep 2016; 6:25757. [PMID: 27181525 PMCID: PMC4867633 DOI: 10.1038/srep25757] [Citation(s) in RCA: 54] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2015] [Accepted: 04/22/2016] [Indexed: 11/09/2022] Open
Abstract
Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.
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Li Y, Long S, Liu Y, Hu C, Teng J, Liu Q, Lv H, Suñé J, Liu M. Conductance Quantization in Resistive Random Access Memory. NANOSCALE RESEARCH LETTERS 2015; 10:420. [PMID: 26501832 PMCID: PMC4623080 DOI: 10.1186/s11671-015-1118-6] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2015] [Accepted: 10/12/2015] [Indexed: 06/02/2023]
Abstract
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.
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Affiliation(s)
- Yang Li
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
| | - Shibing Long
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
| | - Yang Liu
- Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Chen Hu
- Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Jiao Teng
- Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
| | - Qi Liu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
| | - Hangbing Lv
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
| | - Jordi Suñé
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain.
| | - Ming Liu
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
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Bradley SR, Bersuker G, Shluger AL. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation? JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:415401. [PMID: 26414778 DOI: 10.1088/0953-8984/27/41/415401] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Formation of metal rich conductive filaments and their rearrangements determine the switching characteristics in HfO2 based resistive random access memory (RRAM) devices. The initiation of a filament formation process may occur either via aggregation of pre-existing vacancies randomly distributed in the oxide or via generation of new oxygen vacancies close to the pre-existing ones. We evaluate the feasibility of vacancy aggregation processes by calculating the structures and binding energies of oxygen vacancy aggregates consisting of 2, 3 and 4 vacancies in bulk monoclinic (m)-HfO2 using density functional theory (DFT). We demonstrate that formation of neutral oxygen vacancy aggregates is accompanied by small energy gain, which depends on the size and shape of the aggregate. In the most strongly bound configurations, vacancies are unscreened by Hf cations and form voids within the crystal, with the larger aggregates having larger binding energy per vacancy (-0.11 to -0.18 eV). The negatively charged di-vacancy was found to have similar binding energies to the neutral one, while the positively charged di-vacancy was found to be unstable. Thus aggregation process of either neutral or negatively charged oxygen vacancies is energetically feasible.
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Affiliation(s)
- Samuel R Bradley
- Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT, UK
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46
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Ji Y, Hui F, Shi Y, Han T, Song X, Pan C, Lanza M. Note: Fabrication of a fast-response and user-friendly environmental chamber for atomic force microscopes. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2015; 86:106105. [PMID: 26521002 DOI: 10.1063/1.4932965] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The atomic force microscope is one of the most widespread tools in science, but many suppliers do not provide a competitive solution to make experiments in controlled atmospheres. Here, we provide a solution to this problem by fabricating a fast-response and user-friendly environmental chamber. We corroborate the correct functioning of the chamber by studying the formation of local anodic oxidation on a silicon sample (biased under opposite polarities), an effect that can be suppressed by measuring in a dry nitrogen atmosphere. The usefulness of this chamber goes beyond the example here presented, and it could be used in many other fields of science, including physics, mechanics, microelectronics, nanotechnology, medicine, and biology.
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Affiliation(s)
- Yanfeng Ji
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
| | - Fei Hui
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
| | - Yuanyuan Shi
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
| | - Tingting Han
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
| | - Xiaoxue Song
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
| | - Chengbin Pan
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
| | - Mario Lanza
- Institute of Functional Nano & Soft Materials, Soochow University, Collaborative Innovation Center of Suzhou Nano Science & Technology, 199 Ren-Ai Road, Suzhou 215123, China
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47
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48
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Yanfeng Ji, Jianchen Hu, Lanza M. A Future Way of Storing Information: Resistive Random Access Memory. IEEE NANOTECHNOLOGY MAGAZINE 2015. [DOI: 10.1109/mnano.2014.2373402] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Wang G, Long S, Yu Z, Zhang M, Li Y, Xu D, Lv H, Liu Q, Yan X, Wang M, Xu X, Liu H, Yang B, Liu M. Impact of program/erase operation on the performances of oxide-based resistive switching memory. NANOSCALE RESEARCH LETTERS 2015; 10:39. [PMID: 25852336 PMCID: PMC4385037 DOI: 10.1186/s11671-014-0721-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2014] [Accepted: 12/29/2014] [Indexed: 06/04/2023]
Abstract
Further performance improvement is necessary for resistive random access memory (RRAM) to realize its commercialization. In this work, a novel pulse operation method is proposed to improve the performance of RRAM based on Ti/HfO2/Pt structure. In the DC voltage sweep of the RRAM device, the SET transition is abrupt under positive bias. If current sweep with positive bias is utilized in SET process, the SET switching will become gradual, so SET is current controlled. In the negative voltage sweep for RESET process, the change of current with applied voltage is gradual, so RESET is voltage controlled. Current sweep SET and voltage sweep RESET shows better controllability on the parameter variation. Considering the SET/RESET characteristics in DC sweep, in the corresponding pulse operation, the width and height of the pulse series can be adjusted to control the SET and RESET process, respectively. Our new method is different from the traditional pulse operation in which both the width and height of program/erase pulse are simply kept constant which would lead to unnecessary damage to the device. In our new method, in each program or erase operation, a series of pulses with the width/height gradually increased are made use of to fully finish the SET/RESET switching but no excessive stress is generated at the same time, so width/height-controlled accurate SET/RESET can be achieved. Through the operation, the uniformity and endurance of the RRAM device has been significantly improved.
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Affiliation(s)
- Guoming Wang
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
- />Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China
| | - Shibing Long
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Zhaoan Yu
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Meiyun Zhang
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Yang Li
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Dinglin Xu
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Hangbing Lv
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Qi Liu
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Xiaobing Yan
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Ming Wang
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Xiaoxin Xu
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Hongtao Liu
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
| | - Baohe Yang
- />Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384 China
| | - Ming Liu
- />Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China
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50
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Chiu FC. Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films. MATERIALS (BASEL, SWITZERLAND) 2014; 7:7339-7348. [PMID: 28788250 PMCID: PMC5512638 DOI: 10.3390/ma7117339] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/21/2014] [Revised: 10/23/2014] [Accepted: 11/07/2014] [Indexed: 11/26/2022]
Abstract
In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B films was about 91% in the visible light region. Experimental results indicated that the resistance switching in the W/ZnO:B/W structure is nonpolar. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 10⁵ at room temperature. According to the temperature dependence of current-voltage characteristics, the conduction mechanism in ZnO:B films is dominated by hopping conduction and Ohmic conduction in HRS and LRS, respectively. Therefore, trap spacing (1.2 nm) and trap energy levels in ZnO:B films could be obtained.
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Affiliation(s)
- Fu-Chien Chiu
- Department of Electronic Engineering, Ming Chuan University, 5 De-Ming Rd., Gui-Shan, Taoyuan 33348, Taiwan.
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