Observation of Structures in the Processes e^{+}e^{-}→ωχ_{c1} and ωχ_{c2}

We present measurements of the Born cross sections for the processes e^{+}e^{-}→ωχ_{c1} and ωχ_{c2} at center-of-mass energies sqrt[s] from 4.308 to 4.951 GeV. The measurements are performed with data samples corresponding to an integrated luminosity of 11.0  fb^{-1} collected with the BESIII detector operating at the Beijing Electron Positron Collider storage ring. Assuming the e^{+}e^{-}→ωχ_{c2} signals come from a single resonance, the mass and width are determined to be M=(4413.6±9.0±0.8)  MeV/c^{2} and Γ=(110.5±15.0±2.9)  MeV, respectively, which is consistent with the parameters of the well-established resonance ψ(4415). In addition, we also use one single resonance to describe the e^{+}e^{-}→ωχ_{c1} line shape and determine the mass and width to be M=(4544.2±18.7±1.7)  MeV/c^{2} and Γ=(116.1±33.5±1.7)  MeV, respectively. The structure of this line shape, observed for the first time, requires further understanding.

Coupled-Channel Analysis of the χ_{c1}(3872) Line Shape with BESIII Data

We perform a study of the χ_{c1}(3872) line shape using the data samples of e^{+}e^{-}→γχ_{c1}(3872), χ_{c1}(3872)→D^{0}D[over ¯]^{0}π^{0}, and π^{+}π^{-}J/ψ collected with the BESIII detector. The effects of the coupled channels and the off-shell D^{*0} are included in the parametrization of the line shape. The line shape mass parameter is obtained to be M_{X}=(3871.63±0.13_{-0.05}^{+0.06})  MeV. Two poles are found on the first and second Riemann sheets corresponding to the D^{*0}D[over ¯]^{0} branch cut. The pole location on the first sheet is much closer to the D^{*0}D[over ¯]^{0} threshold than the other, and is determined to be 7.04±0.15_{-0.08}^{+0.07}  MeV above the D^{0}D[over ¯]^{0}π^{0} threshold with an imaginary part -0.19±0.08_{-0.19}^{+0.14}  MeV.

Observation of the Anomalous Shape of X(1840) in J/ψ→γ3(π^{+}π^{-}) Indicating a Second Resonance Near pp[over ¯] Threshold

Using a sample of (10087±44)×10^{6}  J/ψ events, which is about 45 times larger than that was previously analyzed, a further investigation on the J/ψ→γ3(π^{+}π^{-}) decay is performed. A significant distortion at 1.84  GeV/c^{2} in the line shape of the 3(π^{+}π^{-}) invariant mass spectrum is observed for the first time, which could be resolved by two overlapping resonant structures, X(1840) and X(1880). The new state X(1880) is observed with a statistical significance larger than 10σ. The mass and width of X(1880) are determined to be 1882.1±1.7±0.7  MeV/c^{2} and 30.7±5.5±2.4  MeV, respectively, which indicates the existence of a pp[over ¯] bound state.

Soybean steroids improve crop abiotic stress tolerance and increase yield

Sterols have long been associated with diverse fields, such as cancer treatment, drug development, and plant growth; however, their underlying mechanisms and functions remain enigmatic. Here, we unveil a critical role played by a GmNF-YC9-mediated CCAAT-box transcription complex in modulating the steroid metabolism pathway within soybeans. Specifically, this complex directly activates squalene monooxygenase (GmSQE1), which is a rate-limiting enzyme in steroid synthesis. Our findings demonstrate that overexpression of either GmNF-YC9 or GmSQE1 significantly enhances soybean stress tolerance, while the inhibition of SQE weakens this tolerance. Field experiments conducted over two seasons further reveal increased yields per plant in both GmNF-YC9 and GmSQE1 overexpressing plants under drought stress conditions. This enhanced stress tolerance is attributed to the reduction of abiotic stress-induced cell oxidative damage. Transcriptome and metabolome analyses shed light on the upregulation of multiple sterol compounds, including fucosterol and soyasaponin II, in GmNF-YC9 and GmSQE1 overexpressing soybean plants under stress conditions. Intriguingly, the application of soybean steroids, including fucosterol and soyasaponin II, significantly improves drought tolerance in soybean, wheat, foxtail millet, and maize. These findings underscore the pivotal role of soybean steroids in countering oxidative stress in plants and offer a new research strategy for enhancing crop stress tolerance and quality from gene regulation to chemical intervention.

Study of the f_{0}(980) and f_{0}(500) Scalar Mesons through the Decay D_{s}^{+}→π^{+}π^{-}e^{+}ν_{e}

Using e^{+}e^{-} collision data corresponding to an integrated luminosity of 7.33  fb^{-1} recorded by the BESIII detector at center-of-mass energies between 4.128 and 4.226 GeV, we present an analysis of the decay D_{s}^{+}→π^{+}π^{-}e^{+}ν_{e}, where the D_{s}^{+} is produced via the process e^{+}e^{-}→D_{s}^{*±}D_{s}^{∓}. We observe the f_{0}(980) in the π^{+}π^{-} system and the branching fraction of the decay D_{s}^{+}→f_{0}(980)e^{+}ν_{e} with f_{0}(980)→π^{+}π^{-} measured to be (1.72±0.13_{stat}±0.10_{syst})×10^{-3}, where the uncertainties are statistical and systematic, respectively. The dynamics of the D_{s}^{+}→f_{0}(980)e^{+}ν_{e} decay are studied with the simple pole parametrization of the hadronic form factor and the Flatté formula describing the f_{0}(980) in the differential decay rate, and the product of the form factor f_{+}^{f_{0}}(0) and the c→s Cabibbo-Kobayashi-Maskawa matrix element |V_{cs}| is determined for the first time to be f_{+}^{f_{0}}(0)|V_{cs}|=0.504±0.017_{stat}±0.035_{syst}. Furthermore, the decay D_{s}^{+}→f_{0}(500)e^{+}ν_{e} is searched for the first time but no signal is found. The upper limit on the branching fraction of D_{s}^{+}→f_{0}(500)e^{+}ν_{e}, f_{0}(500)→π^{+}π^{-} decay is set to be 3.3×10^{-4} at 90% confidence level.

Observation of D^{+}→K_{S}^{0}a_{0}(980)^{+} in the Amplitude Analysis of D^{+}→K_{S}^{0}π^{+}η

We perform for the first time an amplitude analysis of the decay D^{+}→K_{S}^{0}π^{+}η and report the observation of the decay D^{+}→K_{S}^{0}a_{0}(980)^{+} using 2.93  fb^{-1} of e^{+}e^{-} collision data taken at a center-of-mass energy of 3.773 GeV with the BESIII detector. As the only W-annihilation-free decay among D to a_{0}(980) pseudoscalar, D^{+}→K_{S}^{0}a_{0}(980)^{+} is the ideal decay in extracting the contributions of the W-emission amplitudes involving a_{0}(980) and to study the final-state interactions. The absolute branching fraction of D^{+}→K_{S}^{0}π^{+}η is measured to be (1.27±0.04_{stat}±0.03_{syst})%. The branching fractions of intermediate processes D^{+}→K_{S}^{0}a_{0}(980)^{+} with a_{0}(980)^{+}→π^{+}η and D^{+}→π^{+}K[over ¯]_{0}^{*}(1430)^{0} with K[over ¯]_{0}^{*}(1430)^{0}→K_{S}^{0}η are measured to be (1.33±0.05_{stat}±0.04_{syst})% and (0.14±0.03_{stat}±0.01_{syst})%, respectively.

Observation of Significant Flavor-SU(3) Breaking in the Kaon Wave Function at 12<Q^{2}<25 GeV^{2} and Discovery of the Charmless Decay ψ(3770)→K_{S}^{0}K_{L}^{0}

We present cross sections for the reaction e^{+}e^{-}→K_{S}^{0}K_{L}^{0} at center-of-mass energies ranging from 3.51 to 4.95 GeV using data samples collected in the BESIII experiment, corresponding to a total integrated luminosity of 26.5  fb^{-1}. The ratio of neutral-to-charged kaon form factors at large momentum transfers (12 Collapse

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Affiliation(s)

M Ablikim Institute of High Energy Physics, Beijing 100049, People's Republic of China
M N Achasov Budker Institute of Nuclear Physics SB RAS (BINP), Novosibirsk 630090, Russia
P Adlarson Uppsala University, Box 516, SE-75120 Uppsala, Sweden
X C Ai Zhengzhou University, Zhengzhou 450001, People's Republic of China
R Aliberti Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
A Amoroso University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
M R An Liaoning Normal University, Dalian 116029, People's Republic of China
Q An State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Y Bai Southeast University, Nanjing 211100, People's Republic of China
O Bakina Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
I Balossino INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy
Y Ban Peking University, Beijing 100871, People's Republic of China
H-R Bao University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
V Batozskaya Institute of High Energy Physics, Beijing 100049, People's Republic of China National Centre for Nuclear Research, Warsaw 02-093, Poland
K Begzsuren Institute of Physics and Technology, Peace Avenue 54B, Ulaanbaatar 13330, Mongolia
N Berger Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
M Berlowski National Centre for Nuclear Research, Warsaw 02-093, Poland
M Bertani INFN Laboratori Nazionali di Frascati, INFN Laboratori Nazionali di Frascati, I-00044 Frascati, Italy
D Bettoni INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy
F Bianchi University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
E Bianco University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
A Bortone University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
I Boyko Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
R A Briere Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
A Brueggemann University of Muenster, Wilhelm-Klemm-Strasse 9, 48149 Muenster, Germany
H Cai Wuhan University, Wuhan 430072, People's Republic of China
X Cai Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
A Calcaterra INFN Laboratori Nazionali di Frascati, INFN Laboratori Nazionali di Frascati, I-00044 Frascati, Italy
G F Cao Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
N Cao Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S A Cetin Turkish Accelerator Center Particle Factory Group, Istinye University, 34010 Istanbul, Turkey
J F Chang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
T T Chang Xinyang Normal University, Xinyang 464000, People's Republic of China
W L Chang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
G R Che Nankai University, Tianjin 300071, People's Republic of China
G Chelkov Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
C Chen Nankai University, Tianjin 300071, People's Republic of China
Chao Chen Soochow University, Suzhou 215006, People's Republic of China
G Chen Institute of High Energy Physics, Beijing 100049, People's Republic of China
H S Chen Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
M L Chen Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S J Chen Nanjing University, Nanjing 210093, People's Republic of China
S L Chen North China Electric Power University, Beijing 102206, People's Republic of China
S M Chen Tsinghua University, Beijing 100084, People's Republic of China
T Chen Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X R Chen Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X T Chen Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y B Chen Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Y Q Chen Jilin University, Changchun 130012, People's Republic of China
Z J Chen Hunan University, Changsha 410082, People's Republic of China
S K Choi Chung-Ang University, Seoul, 06974, Republic of Korea
X Chu Nankai University, Tianjin 300071, People's Republic of China
G Cibinetto INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy
S C Coen Bochum Ruhr-University, D-44780 Bochum, Germany
F Cossio INFN, I-10125, Turin, Italy
J J Cui Shandong University, Jinan 250100, People's Republic of China
H L Dai Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
J P Dai Yunnan University, Kunming 650500, People's Republic of China
A Dbeyssi Helmholtz Institute Mainz, Staudinger Weg 18, D-55099 Mainz, Germany
R E de Boer Bochum Ruhr-University, D-44780 Bochum, Germany
D Dedovich Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
Z Y Deng Institute of High Energy Physics, Beijing 100049, People's Republic of China
A Denig Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
I Denysenko Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
M Destefanis University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
F De Mori University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
B Ding Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Jinan, Jinan 250022, People's Republic of China
X X Ding Peking University, Beijing 100871, People's Republic of China
Y Ding Liaoning University, Shenyang 110036, People's Republic of China
Y Ding Jilin University, Changchun 130012, People's Republic of China
J Dong Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
L Y Dong Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
M Y Dong Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Dong Wuhan University, Wuhan 430072, People's Republic of China
M C Du Institute of High Energy Physics, Beijing 100049, People's Republic of China
S X Du Zhengzhou University, Zhengzhou 450001, People's Republic of China
Z H Duan Nanjing University, Nanjing 210093, People's Republic of China
P Egorov Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
Y H Fan North China Electric Power University, Beijing 102206, People's Republic of China
J Fang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
S S Fang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
W X Fang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Y Fang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Y Q Fang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
R Farinelli INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy
L Fava University of Eastern Piedmont, I-15121 Alessandria, Italy INFN, I-10125, Turin, Italy
F Feldbauer Bochum Ruhr-University, D-44780 Bochum, Germany
G Felici INFN Laboratori Nazionali di Frascati, INFN Laboratori Nazionali di Frascati, I-00044 Frascati, Italy
C Q Feng State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
J H Feng Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
K Fischer University of Oxford, Keble Road, Oxford OX13RH, United Kingdom
M Fritsch Bochum Ruhr-University, D-44780 Bochum, Germany
C D Fu Institute of High Energy Physics, Beijing 100049, People's Republic of China
J L Fu University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y W Fu Institute of High Energy Physics, Beijing 100049, People's Republic of China
H Gao University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y N Gao Peking University, Beijing 100871, People's Republic of China
Yang Gao State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
S Garbolino INFN, I-10125, Turin, Italy
I Garzia INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy University of Ferrara, I-44122 Ferrara, Italy
P T Ge Wuhan University, Wuhan 430072, People's Republic of China
Z W Ge Nanjing University, Nanjing 210093, People's Republic of China
C Geng Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
E M Gersabeck University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
A Gilman University of Oxford, Keble Road, Oxford OX13RH, United Kingdom
K Goetzen GSI Helmholtzcentre for Heavy Ion Research GmbH, D-64291 Darmstadt, Germany
L Gong Liaoning University, Shenyang 110036, People's Republic of China
W X Gong Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
W Gradl Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
S Gramigna INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy University of Ferrara, I-44122 Ferrara, Italy
M Greco University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
M H Gu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Y T Gu Guangxi University, Nanning 530004, People's Republic of China
C Y Guan Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z L Guan Henan University of Technology, Zhengzhou 450001, People's Republic of China
A Q Guo Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
L B Guo Nanjing Normal University, Nanjing 210023, People's Republic of China
M J Guo Shandong University, Jinan 250100, People's Republic of China
R P Guo Shandong Normal University, Jinan 250014, People's Republic of China
Y P Guo Fudan University, Shanghai 200433, People's Republic of China
A Guskov Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
J Gutierrez Indiana University, Bloomington, Indiana 47405, USA
T T Han Institute of High Energy Physics, Beijing 100049, People's Republic of China
W Y Han Liaoning Normal University, Dalian 116029, People's Republic of China
X Q Hao Henan Normal University, Xinxiang 453007, People's Republic of China
F A Harris University of Hawaii, Honolulu, Hawaii 96822, USA
K K He Soochow University, Suzhou 215006, People's Republic of China
K L He Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
F H H Heinsius Bochum Ruhr-University, D-44780 Bochum, Germany
C H Heinz Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
Y K Heng Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
C Herold Suranaree University of Technology, University Avenue 111, Nakhon Ratchasima 30000, Thailand
T Holtmann Bochum Ruhr-University, D-44780 Bochum, Germany
P C Hong Fudan University, Shanghai 200433, People's Republic of China
G Y Hou Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X T Hou Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y R Hou University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z L Hou Institute of High Energy Physics, Beijing 100049, People's Republic of China
B Y Hu Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
H M Hu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J F Hu South China Normal University, Guangzhou 510006, People's Republic of China
T Hu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y Hu Institute of High Energy Physics, Beijing 100049, People's Republic of China
G S Huang State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
K X Huang Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
L Q Huang Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X T Huang Shandong University, Jinan 250100, People's Republic of China
Y P Huang Institute of High Energy Physics, Beijing 100049, People's Republic of China
T Hussain University of the Punjab, Lahore-54590, Pakistan
N Hüsken Indiana University, Bloomington, Indiana 47405, USA Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
N In der Wiesche University of Muenster, Wilhelm-Klemm-Strasse 9, 48149 Muenster, Germany
M Irshad State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
J Jackson Indiana University, Bloomington, Indiana 47405, USA
S Jaeger Bochum Ruhr-University, D-44780 Bochum, Germany
S Janchiv Institute of Physics and Technology, Peace Avenue 54B, Ulaanbaatar 13330, Mongolia
J H Jeong Chung-Ang University, Seoul, 06974, Republic of Korea
Q Ji Institute of High Energy Physics, Beijing 100049, People's Republic of China
Q P Ji Henan Normal University, Xinxiang 453007, People's Republic of China
X B Ji Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X L Ji Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Y Y Ji Shandong University, Jinan 250100, People's Republic of China
X Q Jia Shandong University, Jinan 250100, People's Republic of China
Z K Jia State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
H J Jiang Wuhan University, Wuhan 430072, People's Republic of China
P C Jiang Peking University, Beijing 100871, People's Republic of China
S S Jiang Liaoning Normal University, Dalian 116029, People's Republic of China
T J Jiang Hangzhou Normal University, Hangzhou 310036, People's Republic of China
X S Jiang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y Jiang University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J B Jiao Shandong University, Jinan 250100, People's Republic of China
Z Jiao Huangshan College, Huangshan 245000, People's Republic of China
S Jin Nanjing University, Nanjing 210093, People's Republic of China
Y Jin University of Jinan, Jinan 250022, People's Republic of China
M Q Jing Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X M Jing University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
T Johansson Uppsala University, Box 516, SE-75120 Uppsala, Sweden
X Kui Institute of High Energy Physics, Beijing 100049, People's Republic of China
S Kabana Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile
N Kalantar-Nayestanaki University of Groningen, NL-9747 AA Groningen, The Netherlands
X L Kang China University of Geosciences, Wuhan 430074, People's Republic of China
X S Kang Liaoning University, Shenyang 110036, People's Republic of China
M Kavatsyuk University of Groningen, NL-9747 AA Groningen, The Netherlands
B C Ke Zhengzhou University, Zhengzhou 450001, People's Republic of China
V Khachatryan Indiana University, Bloomington, Indiana 47405, USA
A Khoukaz University of Muenster, Wilhelm-Klemm-Strasse 9, 48149 Muenster, Germany
R Kiuchi Institute of High Energy Physics, Beijing 100049, People's Republic of China
R Kliemt GSI Helmholtzcentre for Heavy Ion Research GmbH, D-64291 Darmstadt, Germany
O B Kolcu Turkish Accelerator Center Particle Factory Group, Istinye University, 34010 Istanbul, Turkey
B Kopf Bochum Ruhr-University, D-44780 Bochum, Germany
M Kuessner Bochum Ruhr-University, D-44780 Bochum, Germany
A Kupsc National Centre for Nuclear Research, Warsaw 02-093, Poland Uppsala University, Box 516, SE-75120 Uppsala, Sweden
W Kühn Justus-Liebig-Universitaet Giessen, II. Physikalisches Institut, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
J J Lane University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
P Larin Helmholtz Institute Mainz, Staudinger Weg 18, D-55099 Mainz, Germany
A Lavania Indian Institute of Technology Madras, Chennai 600036, India
L Lavezzi University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
T T Lei State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Z H Lei State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
H Leithoff Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
M Lellmann Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
T Lenz Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
C Li Qufu Normal University, Qufu 273165, People's Republic of China
C Li Nankai University, Tianjin 300071, People's Republic of China
C H Li Liaoning Normal University, Dalian 116029, People's Republic of China
Cheng Li State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
D M Li Zhengzhou University, Zhengzhou 450001, People's Republic of China
F Li Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
G Li Institute of High Energy Physics, Beijing 100049, People's Republic of China
H Li State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
H B Li Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
H J Li Henan Normal University, Xinxiang 453007, People's Republic of China
H N Li South China Normal University, Guangzhou 510006, People's Republic of China
Hui Li Nankai University, Tianjin 300071, People's Republic of China
J R Li Tsinghua University, Beijing 100084, People's Republic of China
J S Li Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
J W Li Shandong University, Jinan 250100, People's Republic of China
Ke Li Institute of High Energy Physics, Beijing 100049, People's Republic of China
L J Li Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
L K Li Institute of High Energy Physics, Beijing 100049, People's Republic of China
Lei Li Renmin University of China, Beijing 100872, People's Republic of China
M H Li Nankai University, Tianjin 300071, People's Republic of China
P R Li Lanzhou University, Lanzhou 730000, People's Republic of China
Q X Li Shandong University, Jinan 250100, People's Republic of China
S X Li Fudan University, Shanghai 200433, People's Republic of China
T Li Shandong University, Jinan 250100, People's Republic of China
W D Li Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
W G Li Institute of High Energy Physics, Beijing 100049, People's Republic of China
X H Li State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
X L Li Shandong University, Jinan 250100, People's Republic of China
Xiaoyu Li Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y G Li Peking University, Beijing 100871, People's Republic of China
Z J Li Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
Z X Li Guangxi University, Nanning 530004, People's Republic of China
C Liang Nanjing University, Nanjing 210093, People's Republic of China
H Liang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
H Liang State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Y F Liang Sichuan University, Chengdu 610064, People's Republic of China
Y T Liang Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
G R Liao Guangxi Normal University, Guilin 541004, People's Republic of China
L Z Liao Shandong University, Jinan 250100, People's Republic of China
Y P Liao Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J Libby Indian Institute of Technology Madras, Chennai 600036, India
A Limphirat Suranaree University of Technology, University Avenue 111, Nakhon Ratchasima 30000, Thailand
D X Lin Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
T Lin Institute of High Energy Physics, Beijing 100049, People's Republic of China
B J Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China
B X Liu Wuhan University, Wuhan 430072, People's Republic of China
C Liu Jilin University, Changchun 130012, People's Republic of China
C X Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China
F H Liu Shanxi University, Taiyuan 030006, People's Republic of China
Fang Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China
Feng Liu Central China Normal University, Wuhan 430079, People's Republic of China
G M Liu South China Normal University, Guangzhou 510006, People's Republic of China
H Liu Lanzhou University, Lanzhou 730000, People's Republic of China
H B Liu Guangxi University, Nanning 530004, People's Republic of China
H M Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Huanhuan Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China
Huihui Liu Henan University of Science and Technology, Luoyang 471003, People's Republic of China
J B Liu State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
J Y Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
K Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China
K Y Liu Liaoning University, Shenyang 110036, People's Republic of China
Ke Liu Henan University of Technology, Zhengzhou 450001, People's Republic of China
L Liu State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
L C Liu Nankai University, Tianjin 300071, People's Republic of China
Lu Liu Nankai University, Tianjin 300071, People's Republic of China
M H Liu Fudan University, Shanghai 200433, People's Republic of China
P L Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China
Q Liu University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S B Liu State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
T Liu Fudan University, Shanghai 200433, People's Republic of China
W K Liu Nankai University, Tianjin 300071, People's Republic of China
W M Liu State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
X Liu Lanzhou University, Lanzhou 730000, People's Republic of China
Y Liu Lanzhou University, Lanzhou 730000, People's Republic of China
Y Liu Zhengzhou University, Zhengzhou 450001, People's Republic of China
Y B Liu Nankai University, Tianjin 300071, People's Republic of China
Z A Liu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z Q Liu Shandong University, Jinan 250100, People's Republic of China
X C Lou Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
F X Lu Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
H J Lu Huangshan College, Huangshan 245000, People's Republic of China
J G Lu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
X L Lu Institute of High Energy Physics, Beijing 100049, People's Republic of China
Y Lu Central South University, Changsha 410083, People's Republic of China
Y P Lu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Z H Lu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
C L Luo Nanjing Normal University, Nanjing 210023, People's Republic of China
M X Luo Zhejiang University, Hangzhou 310027, People's Republic of China
T Luo Fudan University, Shanghai 200433, People's Republic of China
X L Luo Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
X R Lyu University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y F Lyu Nankai University, Tianjin 300071, People's Republic of China
F C Ma Liaoning University, Shenyang 110036, People's Republic of China
H Ma Yunnan University, Kunming 650500, People's Republic of China
H L Ma Institute of High Energy Physics, Beijing 100049, People's Republic of China
J L Ma Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
L L Ma Shandong University, Jinan 250100, People's Republic of China
M M Ma Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Q M Ma Institute of High Energy Physics, Beijing 100049, People's Republic of China
R Q Ma Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Y Ma Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Y Ma Peking University, Beijing 100871, People's Republic of China
Y M Ma Institute of Modern Physics, Lanzhou 730000, People's Republic of China
F E Maas Helmholtz Institute Mainz, Staudinger Weg 18, D-55099 Mainz, Germany
M Maggiora University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
S Malde University of Oxford, Keble Road, Oxford OX13RH, United Kingdom
Q A Malik University of the Punjab, Lahore-54590, Pakistan
A Mangoni INFN Sezione di Perugia, I-06100 Perugia, Italy
Y J Mao Peking University, Beijing 100871, People's Republic of China
Z P Mao Institute of High Energy Physics, Beijing 100049, People's Republic of China
S Marcello University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
Z X Meng University of Jinan, Jinan 250022, People's Republic of China
J G Messchendorp GSI Helmholtzcentre for Heavy Ion Research GmbH, D-64291 Darmstadt, Germany University of Groningen, NL-9747 AA Groningen, The Netherlands
G Mezzadri INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy
H Miao Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
T J Min Nanjing University, Nanjing 210093, People's Republic of China
R E Mitchell Indiana University, Bloomington, Indiana 47405, USA
X H Mo Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
B Moses Indiana University, Bloomington, Indiana 47405, USA
N Yu Muchnoi Budker Institute of Nuclear Physics SB RAS (BINP), Novosibirsk 630090, Russia
J Muskalla Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
Y Nefedov Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
F Nerling Helmholtz Institute Mainz, Staudinger Weg 18, D-55099 Mainz, Germany
I B Nikolaev Budker Institute of Nuclear Physics SB RAS (BINP), Novosibirsk 630090, Russia
Z Ning Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
S Nisar COMSATS University Islamabad, Lahore Campus, Defence Road, Off Raiwind Road, 54000 Lahore, Pakistan
Q L Niu Lanzhou University, Lanzhou 730000, People's Republic of China
W D Niu Soochow University, Suzhou 215006, People's Republic of China
Y Niu Shandong University, Jinan 250100, People's Republic of China
S L Olsen University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Q Ouyang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S Pacetti INFN Sezione di Perugia, I-06100 Perugia, Italy University of Perugia, I-06100 Perugia, Italy
X Pan Soochow University, Suzhou 215006, People's Republic of China
Y Pan Southeast University, Nanjing 211100, People's Republic of China
A Pathak Jilin University, Changchun 130012, People's Republic of China
P Patteri INFN Laboratori Nazionali di Frascati, INFN Laboratori Nazionali di Frascati, I-00044 Frascati, Italy
Y P Pei State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
M Pelizaeus Bochum Ruhr-University, D-44780 Bochum, Germany
H P Peng State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Y Y Peng Lanzhou University, Lanzhou 730000, People's Republic of China
K Peters GSI Helmholtzcentre for Heavy Ion Research GmbH, D-64291 Darmstadt, Germany
J L Ping Nanjing Normal University, Nanjing 210023, People's Republic of China
R G Ping Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S Plura Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
V Prasad Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile
F Z Qi Institute of High Energy Physics, Beijing 100049, People's Republic of China
H Qi State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
H R Qi Tsinghua University, Beijing 100084, People's Republic of China
M Qi Nanjing University, Nanjing 210093, People's Republic of China
T Y Qi Fudan University, Shanghai 200433, People's Republic of China
S Qian Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
W B Qian University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
C F Qiao University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J J Qin University of South China, Hengyang 421001, People's Republic of China
L Q Qin Guangxi Normal University, Guilin 541004, People's Republic of China
X S Qin Shandong University, Jinan 250100, People's Republic of China
Z H Qin Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
J F Qiu Institute of High Energy Physics, Beijing 100049, People's Republic of China
S Q Qu Tsinghua University, Beijing 100084, People's Republic of China
C F Redmer Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
K J Ren Liaoning Normal University, Dalian 116029, People's Republic of China
A Rivetti INFN, I-10125, Turin, Italy
M Rolo INFN, I-10125, Turin, Italy
G Rong Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Ch Rosner Helmholtz Institute Mainz, Staudinger Weg 18, D-55099 Mainz, Germany
S N Ruan Nankai University, Tianjin 300071, People's Republic of China
N Salone National Centre for Nuclear Research, Warsaw 02-093, Poland
A Sarantsev Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
Y Schelhaas Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
K Schoenning Uppsala University, Box 516, SE-75120 Uppsala, Sweden
M Scodeggio INFN Sezione di Ferrara, INFN Sezione di Ferrara, I-44122 Ferrara, Italy University of Ferrara, I-44122 Ferrara, Italy
K Y Shan Fudan University, Shanghai 200433, People's Republic of China
W Shan Hunan Normal University, Changsha 410081, People's Republic of China
X Y Shan State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
J F Shangguan Soochow University, Suzhou 215006, People's Republic of China
L G Shao Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
M Shao State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
C P Shen Fudan University, Shanghai 200433, People's Republic of China
H F Shen Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
W H Shen University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Y Shen Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
B A Shi University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
H C Shi State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
J L Shi Fudan University, Shanghai 200433, People's Republic of China
J Y Shi Institute of High Energy Physics, Beijing 100049, People's Republic of China
Q Q Shi Soochow University, Suzhou 215006, People's Republic of China
R S Shi Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Shi Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
J J Song Henan Normal University, Xinxiang 453007, People's Republic of China
T Z Song Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
W M Song Institute of High Energy Physics, Beijing 100049, People's Republic of China Jilin University, Changchun 130012, People's Republic of China
Y J Song Fudan University, Shanghai 200433, People's Republic of China
Y X Song Peking University, Beijing 100871, People's Republic of China
S Sosio University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
S Spataro University of Turin and INFN, University of Turin, I-10125 Turin, Italy INFN, I-10125, Turin, Italy
F Stieler Johannes Gutenberg University of Mainz, Johann-Joachim-Becher-Weg 45, D-55099 Mainz, Germany
Y J Su University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
G B Sun Wuhan University, Wuhan 430072, People's Republic of China
G X Sun Institute of High Energy Physics, Beijing 100049, People's Republic of China
H Sun University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
H K Sun Institute of High Energy Physics, Beijing 100049, People's Republic of China
J F Sun Henan Normal University, Xinxiang 453007, People's Republic of China
K Sun Tsinghua University, Beijing 100084, People's Republic of China
L Sun Wuhan University, Wuhan 430072, People's Republic of China
S S Sun Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
T Sun Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
W Y Sun Jilin University, Changchun 130012, People's Republic of China
Y Sun China University of Geosciences, Wuhan 430074, People's Republic of China
Y J Sun State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Y Z Sun Institute of High Energy Physics, Beijing 100049, People's Republic of China
Z T Sun Shandong University, Jinan 250100, People's Republic of China
Y X Tan State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
C J Tang Sichuan University, Chengdu 610064, People's Republic of China
G Y Tang Institute of High Energy Physics, Beijing 100049, People's Republic of China
J Tang Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
Y A Tang Wuhan University, Wuhan 430072, People's Republic of China
L Y Tao University of South China, Hengyang 421001, People's Republic of China
Q T Tao Hunan University, Changsha 410082, People's Republic of China
M Tat University of Oxford, Keble Road, Oxford OX13RH, United Kingdom
J X Teng State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
V Thoren Uppsala University, Box 516, SE-75120 Uppsala, Sweden
W H Tian Shanxi Normal University, Linfen 041004, People's Republic of China
W H Tian Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
Y Tian Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z F Tian Wuhan University, Wuhan 430072, People's Republic of China
I Uman Near East University, Nicosia, North Cyprus, 99138, Mersin 10, Turkey
Y Wan Soochow University, Suzhou 215006, People's Republic of China
S J Wang Shandong University, Jinan 250100, People's Republic of China
B Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China
B L Wang University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Bo Wang State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
C W Wang Nanjing University, Nanjing 210093, People's Republic of China
D Y Wang Peking University, Beijing 100871, People's Republic of China
F Wang University of South China, Hengyang 421001, People's Republic of China
H J Wang Lanzhou University, Lanzhou 730000, People's Republic of China
J P Wang Shandong University, Jinan 250100, People's Republic of China
K Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
L L Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China
M Wang Shandong University, Jinan 250100, People's Republic of China
Meng Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
N Y Wang University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S Wang Fudan University, Shanghai 200433, People's Republic of China
S Wang Lanzhou University, Lanzhou 730000, People's Republic of China
T Wang Fudan University, Shanghai 200433, People's Republic of China
T J Wang Nankai University, Tianjin 300071, People's Republic of China
W Wang Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
W Wang University of South China, Hengyang 421001, People's Republic of China
W P Wang State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
X Wang Peking University, Beijing 100871, People's Republic of China
X F Wang Lanzhou University, Lanzhou 730000, People's Republic of China
X J Wang Liaoning Normal University, Dalian 116029, People's Republic of China
X L Wang Fudan University, Shanghai 200433, People's Republic of China
Y Wang Tsinghua University, Beijing 100084, People's Republic of China
Y D Wang North China Electric Power University, Beijing 102206, People's Republic of China
Y F Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y L Wang Henan Normal University, Xinxiang 453007, People's Republic of China
Y N Wang North China Electric Power University, Beijing 102206, People's Republic of China
Y Q Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Yaqian Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China Hebei University, Baoding 071002, People's Republic of China
Yi Wang Tsinghua University, Beijing 100084, People's Republic of China
Z Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Z L Wang University of South China, Hengyang 421001, People's Republic of China
Z Y Wang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Ziyi Wang University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
D Wei University of Science and Technology Liaoning, Anshan 114051, People's Republic of China
D H Wei Guangxi Normal University, Guilin 541004, People's Republic of China
F Weidner University of Muenster, Wilhelm-Klemm-Strasse 9, 48149 Muenster, Germany
S P Wen Institute of High Energy Physics, Beijing 100049, People's Republic of China
C W Wenzel Bochum Ruhr-University, D-44780 Bochum, Germany
U Wiedner Bochum Ruhr-University, D-44780 Bochum, Germany
G Wilkinson University of Oxford, Keble Road, Oxford OX13RH, United Kingdom
M Wolke Uppsala University, Box 516, SE-75120 Uppsala, Sweden
L Wollenberg Bochum Ruhr-University, D-44780 Bochum, Germany
C Wu Liaoning Normal University, Dalian 116029, People's Republic of China
J F Wu Institute of High Energy Physics, Beijing 100049, People's Republic of China China Center of Advanced Science and Technology, Beijing 100190, People's Republic of China
L H Wu Institute of High Energy Physics, Beijing 100049, People's Republic of China
L J Wu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Wu Fudan University, Shanghai 200433, People's Republic of China
X H Wu Jilin University, Changchun 130012, People's Republic of China
Y Wu University of Science and Technology of China, Hefei 230026, People's Republic of China
Y H Wu Soochow University, Suzhou 215006, People's Republic of China
Y J Wu Institute of Modern Physics, Lanzhou 730000, People's Republic of China
Z Wu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
L Xia State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
X M Xian Liaoning Normal University, Dalian 116029, People's Republic of China
T Xiang Peking University, Beijing 100871, People's Republic of China
D Xiao Lanzhou University, Lanzhou 730000, People's Republic of China
G Y Xiao Nanjing University, Nanjing 210093, People's Republic of China
S Y Xiao Institute of High Energy Physics, Beijing 100049, People's Republic of China
Y L Xiao Fudan University, Shanghai 200433, People's Republic of China
Z J Xiao Nanjing Normal University, Nanjing 210023, People's Republic of China
C Xie Nanjing University, Nanjing 210093, People's Republic of China
X H Xie Peking University, Beijing 100871, People's Republic of China
Y Xie Shandong University, Jinan 250100, People's Republic of China
Y G Xie Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Y H Xie Central China Normal University, Wuhan 430079, People's Republic of China
Z P Xie State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
T Y Xing Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
C F Xu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
C J Xu Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
G F Xu Institute of High Energy Physics, Beijing 100049, People's Republic of China
H Y Xu University of Jinan, Jinan 250022, People's Republic of China
Q J Xu Hangzhou Normal University, Hangzhou 310036, People's Republic of China
Q N Xu Inner Mongolia University, Hohhot 010021, People's Republic of China
W Xu Institute of High Energy Physics, Beijing 100049, People's Republic of China
W L Xu University of Jinan, Jinan 250022, People's Republic of China
X P Xu Soochow University, Suzhou 215006, People's Republic of China
Y C Xu Yantai University, Yantai 264005, People's Republic of China
Z P Xu Nanjing University, Nanjing 210093, People's Republic of China
Z S Xu University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
F Yan Fudan University, Shanghai 200433, People's Republic of China
L Yan Fudan University, Shanghai 200433, People's Republic of China
W B Yan State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
W C Yan Zhengzhou University, Zhengzhou 450001, People's Republic of China
X Q Yan Institute of High Energy Physics, Beijing 100049, People's Republic of China
H J Yang Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
H L Yang Jilin University, Changchun 130012, People's Republic of China
H X Yang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Tao Yang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Y Yang Fudan University, Shanghai 200433, People's Republic of China
Y F Yang Nankai University, Tianjin 300071, People's Republic of China
Y X Yang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Yifan Yang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z W Yang Lanzhou University, Lanzhou 730000, People's Republic of China
Z P Yao Shandong University, Jinan 250100, People's Republic of China
M Ye Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
M H Ye China Center of Advanced Science and Technology, Beijing 100190, People's Republic of China
J H Yin Institute of High Energy Physics, Beijing 100049, People's Republic of China
Z Y You Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
B X Yu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
C X Yu Nankai University, Tianjin 300071, People's Republic of China
G Yu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J S Yu Hunan University, Changsha 410082, People's Republic of China
T Yu University of South China, Hengyang 421001, People's Republic of China
X D Yu Peking University, Beijing 100871, People's Republic of China
C Z Yuan Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
L Yuan Beihang University, Beijing 100191, People's Republic of China
S C Yuan Institute of High Energy Physics, Beijing 100049, People's Republic of China
Y Yuan Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z Y Yuan Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
C X Yue Liaoning Normal University, Dalian 116029, People's Republic of China
A A Zafar University of the Punjab, Lahore-54590, Pakistan
F R Zeng Shandong University, Jinan 250100, People's Republic of China
S H Zeng University of South China, Hengyang 421001, People's Republic of China
X Zeng Fudan University, Shanghai 200433, People's Republic of China
Y Zeng Hunan University, Changsha 410082, People's Republic of China
Y J Zeng Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Y Zhai Jilin University, Changchun 130012, People's Republic of China
Y C Zhai Shandong University, Jinan 250100, People's Republic of China
Y H Zhan Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
A Q Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
B L Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
B X Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China
D H Zhang Nankai University, Tianjin 300071, People's Republic of China
G Y Zhang Henan Normal University, Xinxiang 453007, People's Republic of China
H Zhang University of Science and Technology of China, Hefei 230026, People's Republic of China
H C Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
H H Zhang Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
H H Zhang Jilin University, Changchun 130012, People's Republic of China
H Q Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
H Y Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
J Zhang Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
J Zhang Zhengzhou University, Zhengzhou 450001, People's Republic of China
J J Zhang Shanxi Normal University, Linfen 041004, People's Republic of China
J L Zhang Henan University, Kaifeng 475004, People's Republic of China
J Q Zhang Nanjing Normal University, Nanjing 210023, People's Republic of China
J W Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J X Zhang Lanzhou University, Lanzhou 730000, People's Republic of China
J Y Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China
J Z Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Jianyu Zhang University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
L M Zhang Tsinghua University, Beijing 100084, People's Republic of China
L Q Zhang Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
Lei Zhang Nanjing University, Nanjing 210093, People's Republic of China
P Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Q Y Zhang Liaoning Normal University, Dalian 116029, People's Republic of China Zhengzhou University, Zhengzhou 450001, People's Republic of China
Shuihan Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Shulei Zhang Hunan University, Changsha 410082, People's Republic of China
X D Zhang North China Electric Power University, Beijing 102206, People's Republic of China
X M Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China
X Y Zhang Shandong University, Jinan 250100, People's Republic of China
Y Zhang University of South China, Hengyang 421001, People's Republic of China
Y Zhang University of Oxford, Keble Road, Oxford OX13RH, United Kingdom
Y T Zhang Zhengzhou University, Zhengzhou 450001, People's Republic of China
Y H Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Yan Zhang State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Yao Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Z D Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Z H Zhang Institute of High Energy Physics, Beijing 100049, People's Republic of China
Z L Zhang Jilin University, Changchun 130012, People's Republic of China
Z Y Zhang Nankai University, Tianjin 300071, People's Republic of China
Z Y Zhang Wuhan University, Wuhan 430072, People's Republic of China
G Zhao Institute of High Energy Physics, Beijing 100049, People's Republic of China
J Y Zhao Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J Z Zhao Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Lei Zhao State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Ling Zhao Institute of High Energy Physics, Beijing 100049, People's Republic of China
M G Zhao Nankai University, Tianjin 300071, People's Republic of China
R P Zhao University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S J Zhao Zhengzhou University, Zhengzhou 450001, People's Republic of China
Y B Zhao Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
Y X Zhao Institute of Modern Physics, Lanzhou 730000, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Z G Zhao State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
A Zhemchugov Joint Institute for Nuclear Research, 141980 Dubna, Moscow region, Russia
B Zheng University of South China, Hengyang 421001, People's Republic of China
J P Zheng Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China
W J Zheng Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
Y H Zheng University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
B Zhong Nanjing Normal University, Nanjing 210023, People's Republic of China
X Zhong Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
H Zhou Shandong University, Jinan 250100, People's Republic of China
L P Zhou Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
X Zhou Wuhan University, Wuhan 430072, People's Republic of China
X K Zhou Central China Normal University, Wuhan 430079, People's Republic of China
X R Zhou State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
X Y Zhou Liaoning Normal University, Dalian 116029, People's Republic of China
Y Z Zhou Fudan University, Shanghai 200433, People's Republic of China
J Zhu Nankai University, Tianjin 300071, People's Republic of China
K Zhu Institute of High Energy Physics, Beijing 100049, People's Republic of China
K J Zhu Institute of High Energy Physics, Beijing 100049, People's Republic of China State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
L Zhu Jilin University, Changchun 130012, People's Republic of China
L X Zhu University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
S H Zhu University of Science and Technology Liaoning, Anshan 114051, People's Republic of China
S Q Zhu Nanjing University, Nanjing 210093, People's Republic of China
T J Zhu Fudan University, Shanghai 200433, People's Republic of China
W J Zhu Fudan University, Shanghai 200433, People's Republic of China
Y C Zhu State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China
Z A Zhu Institute of High Energy Physics, Beijing 100049, People's Republic of China University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
J H Zou Institute of High Energy Physics, Beijing 100049, People's Republic of China
J Zu State Key Laboratory of Particle Detection and Electronics, Beijing 100049, Hefei 230026, People's Republic of China University of Science and Technology of China, Hefei 230026, People's Republic of China

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Investigation of the ΔI=1/2 Rule and Test of CP Symmetry through the Measurement of Decay Asymmetry Parameters in Ξ^{-} Decays

Using (10087±44)×10^{6}  J/ψ events collected with the BESIII detector, numerous Ξ^{-} and Λ decay asymmetry parameters are simultaneously determined from the process J/ψ→Ξ^{-}Ξ[over ¯]^{+}→Λ(pπ^{-})π^{-}Λ[over ¯](n[over ¯]π^{0})π^{+} and its charge-conjugate channel. The precisions of α_{Λ0} for Λ→nπ^{0} and α[over ¯]_{Λ0} for Λ[over ¯]→n[over ¯]π^{0} compared to world averages are improved by factors of 4 and 1.7, respectively. The ratio of decay asymmetry parameters of Λ→nπ^{0} to that of Λ→pπ^{-}, ⟨α_{Λ0}⟩/⟨α_{Λ-}⟩, is determined to be 0.873±0.012_{-0.010}^{+0.011}, where the first and the second uncertainties are statistical and systematic, respectively. The ratio is smaller than unity more than 5σ, which signifies the existence of the ΔI=3/2 transition in Λ for the first time. Besides, we test for CP symmetry in Ξ^{-}→Λπ^{-} and in Λ→nπ^{0} with the best precision to date.

Determination of the Σ^{+} Timelike Electromagnetic Form Factors

Based on data samples collected with the BESIII detector at the BEPCII collider, the process e^{+}e^{-}→Σ^{+}Σ[over ¯]^{-} is studied at center-of-mass energies sqrt[s]=2.3960, 2.6454, and 2.9000 GeV. Using a fully differential angular description of the final state particles, both the relative magnitude and phase information of the Σ^{+} electromagnetic form factors in the timelike region are extracted. The relative phase between the electric and magnetic form factors is determined to be sinΔΦ=-0.67±0.29(stat)±0.18(syst) at sqrt[s]=2.3960  GeV, ΔΦ=55°±19°(stat)±14°(syst) at sqrt[s]=2.6454  GeV, and 78°±22°(stat)±9°(syst) at sqrt[s]=2.9000  GeV. For the first time, the phase of the hyperon electromagnetic form factors is explored in a wide range of four-momentum transfer. The evolution of the phase along with four-momentum transfer is an important input for understanding its asymptotic behavior and the dynamics of baryons.

First Measurement of the Decay Asymmetry in the Pure W-Boson-Exchange Decay Λ_{c}^{+}→Ξ^{0}K^{+}

Based on 4.4  fb^{-1} of e^{+}e^{-} annihilation data collected at the center-of-mass energies between 4.60 and 4.70 GeV with the BESIII detector at the BEPCII collider, the pure W-boson-exchange decay Λ_{c}^{+}→Ξ^{0}K^{+} is studied with a full angular analysis. The corresponding decay asymmetry is measured for the first time to be α_{Ξ^{0}K^{+}}=0.01±0.16(stat)±0.03(syst). This result reflects the noninterference effect between the S- and P-wave amplitudes. The phase shift between S- and P-wave amplitudes has two solutions, which are δ_{p}-δ_{s}=-1.55±0.25(stat)±0.05(syst)  rad or 1.59±0.25(stat)±0.05(syst)  rad.

Test of CP Symmetry in Hyperon to Neutron Decays

The quantum entangled J/ψ→Σ^{+}Σ[over ¯]^{-} pairs from (1.0087±0.0044)×10^{10}  J/ψ events taken by the BESIII detector are used to study the nonleptonic two-body weak decays Σ^{+}→nπ^{+} and Σ[over ¯]^{-}→n[over ¯]π^{-}. The CP-odd weak decay parameters of the decays Σ^{+}→nπ^{+} (α_{+}) and Σ[over ¯]^{-}→n[over ¯]π^{-} (α[over ¯]_{-}) are determined to be 0.0481±0.0031_{stat}±0.0019_{syst} and -0.0565±0.0047_{stat}±0.0022_{syst}, respectively. The decay parameter α[over ¯]_{-} is measured for the first time, and the accuracy of α_{+} is improved by a factor of 4 compared to the previous results. The simultaneously determined decay parameters allow the first precision CP symmetry test for any hyperon decay with a neutron in the final state with the measurement of A_{CP}=(α_{+}+α[over ¯]_{-})/(α_{+}-α[over ¯]_{-})=-0.080±0.052_{stat}±0.028_{syst}. Assuming CP conservation, the average decay parameter is determined as ⟨α_{+}⟩=(α_{+}-α[over ¯]_{-})/2=-0.0506±0.0026_{stat}±0.0019_{syst}, while the ratios α_{+}/α_{0} and α[over ¯]_{-}/α[over ¯]_{0} are -0.0490±0.0032_{stat}±0.0021_{syst} and -0.0571±0.0053_{stat}±0.0032_{syst}, where α_{0} and α[over ¯]_{0} are the decay parameters of the decays Σ^{+}→pπ^{0} and Σ[over ¯]^{-}→p[over ¯]π^{0}, respectively.

Measurement of Energy-Dependent Pair-Production Cross Section and Electromagnetic Form Factors of a Charmed Baryon

We study the process e^{+}e^{-}→Λ_{c}^{+}Λ[over ¯]_{c}^{-} at twelve center-of-mass energies from 4.6119 to 4.9509 GeV using data samples collected by the BESIII detector at the BEPCII collider. The Born cross sections and effective form factors (|G_{eff}|) are determined with unprecedented precision after combining the single and double-tag methods based on the decay process Λ_{c}^{+}→pK^{-}π^{+}. Flat cross sections around 4.63 GeV are obtained and no indication of the resonant structure Y(4630), as reported by Belle, is found. In addition, no oscillatory behavior is discerned in the |G_{eff}| energy dependence of Λ_{c}^{+}, in contrast to what is seen for the proton and neutron cases. Analyzing the cross section together with the polar-angle distribution of the Λ_{c}^{+} baryon at each energy point, the moduli of electric and magnetic form factors (|G_{E}| and |G_{M}|) are extracted and separated. For the first time, the energy dependence of the form factor ratio |G_{E}/G_{M}| is observed, which can be well described by an oscillatory function.

Precise Measurement of the e^{+}e^{-}→D_{s}^{*+}D_{s}^{*-} Cross Sections at Center-of-Mass Energies from Threshold to 4.95 GeV

The process e^{+}e^{-}→D_{s}^{*+}D_{s}^{*-} is studied with a semi-inclusive method using data samples at center-of-mass energies from threshold to 4.95 GeV collected with the BESIII detector operating at the Beijing Electron Positron Collider. The Born cross sections of the process are measured for the first time with high precision in this energy region. Two resonance structures are observed in the energy-dependent cross sections around 4.2 and 4.4 GeV. By fitting the cross sections with a coherent sum of three Breit-Wigner amplitudes and one phase-space amplitude, the two significant structures are assigned masses of (4186.8±8.7±30) and (4414.6±3.4±6.1)  MeV/c^{2}, widths of (55±15±53) and (122.5±7.5±8.1)  MeV, where the first errors are statistical and the second ones are systematic. The inclusion of a third Breit-Wigner amplitude is necessary to describe a structure around 4.79 GeV.

First Experimental Study of the Purely Leptonic Decay D_{s}^{*+}→e^{+}ν_{e}

Using 7.33  fb^{-1} of e^{+}e^{-} collision data taken with the BESIII detector at the BEPCII collider, we report the first experimental study of the purely leptonic decay D_{s}^{*+}→e^{+}ν_{e}. Our data contain a signal of this decay with a statistical significance of 2.9σ. The branching fraction of D_{s}^{*+}→e^{+}ν_{e} is measured to be (2.1_{-0.9_{stat}}^{+1.2}±0.2_{syst})×10^{-5}, corresponding to an upper limit of 4.0×10^{-5} at the 90% confidence level. Taking the total width of the D_{s}^{*+} [(0.070±0.028)  keV] predicted with the radiative D_{s}^{*+} decay from the lattice QCD calculation as input, the decay constant of the D_{s}^{*+} is determined to be f_{D_{s}^{*+}}=(214_{-46_{stat}}^{+61}±44_{syst})  MeV, corresponding to an upper limit of 354 MeV at the 90% confidence level.

Heat shock protein TaHSP17.4, a TaHOP interactor in wheat, improves plant stress tolerance

Adaptation to drought and salt stresses is a fundamental part of plant cell physiology and is of great significance for crop production under environmental stress. Heat shock proteins (HSPs) are molecular chaperones that play a crucial role in folding, assembling, translocating, and degrading proteins. However, their underlying mechanisms and functions in stress tolerance remain elusive. Here, we identified the HSP TaHSP17.4 in wheat by analyzing the heat stress-induced transcriptome. Further analysis showed that TaHSP17.4 was significantly induced under drought, salt, and heat stress treatments. Intriguingly, yeast-two-hybrid analysis showed that TaHSP17.4 interacts with the HSP70/HSP90 organizing protein (HOP) TaHOP, which plays a significant role in linking HSP70 and HSP90. We found that TaHSP17.4- and TaHOP-overexpressing plants have a higher proline content and a lower malondialdehyde content than wild-type plants under stress conditions and display strong tolerance to drought, salt, and heat stress. Additionally, qRT-PCR analysis showed that stress-responsive genes relevant to reactive oxygen species scavenging and abscisic acid signaling pathways were significantly induced in TaHSP17.4- and TaHOP-overexpressing plants under stress conditions. Together, our findings provide insight into HSP functions in wheat and two novel candidate genes for improvement of wheat varieties.

First Study of Reaction Ξ^{0}n→Ξ^{-}p Using Ξ^{0}-Nucleus Scattering at an Electron-Positron Collider

Using (1.0087±0.0044)×10^{10}  J/ψ events collected with the BESIII detector at the BEPCII storage ring, the process Ξ^{0}n→Ξ^{-}p is studied, where the Ξ^{0} baryon is produced in the process J/ψ→Ξ^{0}Ξ[over ¯]^{0} and the neutron is a component of the ^{9}Be, ^{12}C, and ^{197}Au nuclei in the beam pipe. A clear signal is observed with a statistical significance of 7.1σ. The cross section of the reaction Ξ^{0}+^{9}Be→Ξ^{-}+p+^{8}Be is determined to be σ(Ξ^{0}+^{9}Be→Ξ^{-}+p+^{8}Be)=(22.1±5.3_{stat}±4.5_{sys})  mb at the Ξ^{0} momentum of 0.818  GeV/c, where the first uncertainty is statistical and the second is systematic. No significant H-dibaryon signal is observed in the Ξ^{-}p final state. This is the first study of hyperon-nucleon interactions in electron-positron collisions and opens up a new direction for such research.

Transformation and Detection of Soybean Hairy Roots

Agrobacterium rhizogenes is a soil bacteria with extensive infectivity, which can infect almost all dicotyledonous plants and a few monocotyledonous plants to induce root nodules. This is caused by the root-inducing plasmid, which contains genes responsible for the autonomous growth of root nodules and crown gall base synthesis. Structurally, it is similar to the tumor-inducing plasmid in that it mainly contains the Vir region, the T-DNA region, and the functional region of crown gall base synthesis. Its T-DNA is integrated into the nuclear genome of the plant with the assistance of Vir genes, causing hairy root disease in the host plant and the formation of hairy roots. The roots produced by Agrobacterium rhizogenes-infested plants are characterized by a fast growth rate, high degree of differentiation, physiological, biochemical, and genetic stability, and ease of manipulation and control. In particular, the hairy root system is an efficient and rapid research tool for plants that have no affinity for transformation by Agrobacterium rhizogenes and low transformation efficiency. The establishment of germinating root culture system for the production of secondary metabolites in the original plants through the genetic transformation of natural plants mediated by root-inducing plasmid in Agrobacterium rhizogenes has become a new technology combining plant genetic engineering and cell engineering. It has been widely used in a variety of plants for different molecular purposes, such as pathological analysis, gene function verification, and secondary metabolite research. Chimeric plants obtained by induction of Agrobacterium rhizogenes that can be expressed instantaneously and contemporarily are more rapidly obtained, compared to tissue culture and stably inheritable transgenic strains. In general, transgenic plants can be obtained in approximately one month.

Observation of Three Charmoniumlike States with J^{PC}=1^{--} in e^{+}e^{-}→D^{*0}D^{*-}π^{+}

The Born cross sections of the process e^{+}e^{-}→D^{*0}D^{*-}π^{+} at center-of-mass energies from 4.189 to 4.951 GeV are measured for the first time. The data samples used correspond to an integrated luminosity of 17.9  fb^{-1} and were collected by the BESIII detector operating at the BEPCII storage ring. Three enhancements around 4.20, 4.47, and 4.67 GeV are visible. The resonances have masses of 4209.6±4.7±5.9  MeV/c^{2}, 4469.1±26.2±3.6  MeV/c^{2}, and 4675.3±29.5±3.5  MeV/c^{2} and widths of 81.6±17.8±9.0  MeV, 246.3±36.7±9.4  MeV, and 218.3±72.9±9.3  MeV, respectively, where the first uncertainties are statistical and the second systematic. The first and third resonances are consistent with the ψ(4230) and ψ(4660) states, respectively, while the second one is compatible with the ψ(4500) observed in the e^{+}e^{-}→K^{+}K^{-}J/ψ process. These three charmoniumlike ψ states are observed in the e^{+}e^{-}→D^{*0}D^{*-}π^{+} process for the first time.

GmDof41 regulated by the DREB1-type protein improves drought and salt tolerance by regulating the DREB2-type protein in soybean

Despite their essential and multiple roles in biological processes, the molecular mechanism of Dof transcription factors (TFs) for responding to abiotic stresses is rarely reported in plants. We identified a soybean Dof gene GmDof41 which was involved in the responses to drought, salt, and exogenous ABA stresses. Overexpression of GmDof41 in soybean transgenic hairy roots attenuated H₂O₂ accumulation and regulated proline homeostasis, resulting in the drought and salt tolerance. Yeast one-hybrid and electrophoretic mobility shift assay (EMSA) illustrated that GmDof41 was regulated by the DREB1-type protein GmDREB1B;1 that could improve drought and salt tolerance in plants. Further studies illustrated GmDof41 can directly bind to the promoter of GmDREB2A which encodes a DREB2-type protein and affects abiotic stress tolerance in plants. Collectively, our results suggested that GmDof41 positively regulated drought and salt tolerance by correlating with GmDREB1B;1 and GmDREB2A. This study provides an important basis for further exploring the abiotic stress-tolerance mechanism of Dof TFs in soybean.

The effect of glutathione biosynthesis of Streptococcus thermophilus ST-1 on cocultured Lactobacillus delbrueckii ssp. bulgaricus ATCC11842

Streptococcus thermophilus and Lactobacillus delbrueckii ssp. bulgaricus are the main species used for yogurt preparation. Glutathione (GSH) can be synthesized by S. thermophilus and plays a crucial role in combating environmental stress. However, the effect of GSH biosynthesis by S. thermophilus on cocultured L. delbrueckii ssp. bulgaricus is still unknown. In this study, a mutant S. thermophilus ΔgshF was constructed by deleting the GSH synthase. The wild strain S. thermophilus ST-1 and ΔgshF mutants were cocultured with L. delbrueckii ssp. bulgaricus ATCC11842 by using Transwell chambers (Guangzhou Shuopu Biotechnology Co., Ltd.), respectively. It was proven that the GSH synthesized by S. thermophilus ST-1 could be absorbed and used by L. delbrueckii ssp. bulgaricus ATCC11842, and promote growth ability and stress tolerance of L. delbrueckii ssp. bulgaricus ATCC11842. The biomass of L. delbrueckii ssp. bulgaricus ATCC11842 cocultured with S. thermophilus ST-1 or ΔgshF (adding exogenous GSH) increased by 1.8 and 1.4 times compared with the biomass of L. delbrueckii ssp. bulgaricus ATCC11842 cocultured with S. thermophilus ΔgshF. Meanwhile, after H₂O₂ and low-temperature treatments, the bacterial viability of L. delbrueckii ssp. bulgaricus cocultured with S. thermophilus ΔgshF, with or without GSH, was decreased by 41 and 15% compared with that of L. delbrueckii ssp. bulgaricus cocultured with S. thermophilus ST-1. Furthermore, transcriptome analysis showed that the expression levels of genes involved in purine nucleotide and pyrimidine nucleotide metabolism in L. delbrueckii ssp. bulgaricus ATCC11842 were at least 3 times increased when cocultured with S. thermophilus (fold change > 3.0). Moreover, compared with the mutant strain ΔgshF, the wild-type strain ST-1 could shorten the fermented curd time by 5.3 hours during yogurt preparation. These results indicated that the GSH synthesized by S. thermophilus during cocultivation effectively enhanced the activity of L. delbrueckii ssp. bulgaricus and significantly improved the quality of fermented milk.

Foxtail millet MYB-like transcription factor SiMYB16 confers salt tolerance in transgenic rice by regulating phenylpropane pathway

R2R3-MYB transcription factors play an important role in the synthesis of phenylpropanoid-derived compounds, which in turn provide salt tolerance in plant. In this study, we found that the expression of foxtail millet R2R3-MYB factor SiMYB16 can be induced by salt and drought. SiMYB16 is localized in the nucleus and acts as a transcriptional activator. Phylogenetic analysis indicates that SiMYB16 belongs to the R2R3-MYB transcription factor family subgroup 24. Transgenic rice expressing SiMYB16 (OX16) had a higher survival rate, lower malondialdehyde content, and heavier fresh weight compared with type (WT) under salt stress conditions. The transgenic plants also had a higher germination rate in salt treatment conditions and higher yield in the field compared with wild-type plants. Transcriptome analysis revealed that the up-regulated differential expression genes in the transgenic rice were mainly involved in phenylpropanoid biosynthesis, fatty acid elongation, phenylalanine metabolism, and flavonoid biosynthesis pathways. Quantitative real-time PCR analysis also showed that the genes encoding the major enzymes in the lignin and suberin biosynthesis pathways had higher expression level in SiMYB16 transgenic plants. Correspondingly, the content of flavonoid and lignin, and the activity of fatty acid synthase increased in SiMYB16 transgenic rice compared with wild-type plants under salt stress treatment. These results indicate that SiMYB16 gene can enhance plant salt tolerance by regulating the biosynthesis of lignin and suberin.

[Construction and analysis of functional network of hemi-brain in patients with brain tumors before and after anesthesia based on resting-state functional magnetic resonance imaging]

Objective: To construct and analyze the functional network changes of hemi-brain in patients with brain tumor before and after anesthesia by using resting state functional magnetic resonance imaging (rs-fMRI). Methods: A total of 18 right-handed patients were prospectively included (6 males and 12 females). The patients underwent glioma resection in Peking University International Hospital from December 2018 to December 2021, and age ranged from 20 to 65 (45.1±13.6) years, with American Society of Anesthesiologists (ASA) grade of Ⅰ-Ⅱ. MRI scans were performed while the patient was awake and at the depth of surgical anesthesia. The functional network of healthy lateral brain was constructed and analyzed by means of graph theory, and its global and local topological properties were calculated. Global topology attributes included global efficiency (Eg), local efficiency (Eloc), clustering parameters (Cp), length parameter of shortest path (Lp), and small world (SW). Topology attributes of nodes included node degree (ND), node efficiency (NE) and between centrality (BC). The global and nodal topological properties of the hemi-brain network were compared between patients with different hemispherical space occupying under wakefulness and anesthesia. Results: At the awake state, Eloc and Cp in the global topological attributes of hemi-brain network were 0.259±0.007 and 0.197±0.010, respectively, and decreased to 0.242±0.013 and 0.177±0.021, respectively after anesthesia, with statistically significant differences (all P<0.01). The topological attributes of the nodes in hemi-side brain showed that ND, NE and BC were increased in the default mode network-related brain regions, while NE and BC were decreased in the limbic system and subcortical structures. Eloc and Cp were 0.258±0.008 and 0.198±0.008 respectively in the patients with left hemisphere space occupying, and decreased to 0.241±0.011 and 0.177±0.015 respectively after anesthesia, with statistically significant differences (all P<0.01). However, only Eloc decreased in patients with right hemisphere space occupying after anesthesia, and Eloc was 0.260±0.006 and 0.243±0.016 respectively when awake and after anesthesia, with statistically significant differences (P<0.05). The topological attributes of nodes in patients with space occupying in different cerebral hemispheres showed bidirectional changes after anesthesia, and patients with space occupying in the left cerebral hemisphere were more likely to be widely affected after anesthesia. The effects of anesthetic drugs may show hemispheric laterality. If the tumor was in the dominant hemisphere, the compensatory function of the dominant side was more likely to be damaged. Conclusions: During anesthesia-induced loss of consciousness in patients with brain tumors, both the ability to integrate information and the functional connections between local regions are weakened, and some brain regions have functional connection reorganization. The changes of brain network after anesthesia are bidirectional regulation.

A food-grade vector for Streptococcus thermophilus based on the α-complementation of β-galactosidase

Streptococcus thermophilus is a common yogurt starter that consumes lactose as its primary carbon source. The enzyme β-galactosidase is essential for the lactose metabolism and the growth of this species. Streptococcus thermophilus appears to be a promising cell factory. Food-grade vectors have advantages in heterologous protein expression. This study aimed to determine whether the β-galactosidase of S. thermophilus has the α-complementary characteristic and to develop a novel food-grade vector based on this phenomenon. The N-terminal 7 to 36 AA residues of the β-galactosidase in S. thermophilus were deleted. The obtained mutant S. thermophilus Δα lost β-galactosidase activity and growth ability in the lactose medium. Subsequently, plasmids expressing α-fragments with different lengths of 1 to 36 (Sα1), 1 to 53 (Sα2), and 1 to 88 (Sα3) AA were constructed and transformed into S. thermophilus Δα. Recombinant S. thermophilus Δα expressing Sα2 or Sα3 recovered the ability to grow in the lactose medium, and their β-galactosidase activity accounted for 24.5% or 11.5% of the wild strain, respectively. These results indicated that the α-complementation system of β-galactosidase existed in S. thermophilus. Based on the characteristic, a food-grade vector pSEα was constructed. Except for Sα2, vector pSEα expressed the α-donor derived from E. coli β-galactosidase. This facilitated the construction of recombinant plasmids in E. coli DH5α and thus improved the transformation efficiency of S. thermophilus. Green fluorescent protein as a reporter protein could be highly expressed in S. thermophilus using this vector. As a result, pSEα is an efficient and safe vector for S. thermophilus with potential food applications.

Microwave-field sensing via electromagnetically induced absorption of Rb irradiated by three-color infrared lasers

A microwave electric field sensing has been set up based on a three-color electromagnetically induced absorption in rubidium vapor cell via cascading transitions. All transitions are irradiated by infrared lasers: a 780 nm laser servers as probe to monitor the optical transmittancy via transition 5S_1/2→P_3/2;, a 776 nm laser and a 1260 nm laser are used to couple the states 5P_3/2 and 5D_5/2 and states 5D_5/2 and 44F_7/2, respectively. We find that a frequency detuning ∼2π × ( - 40) MHz of the 776 nm dressing beam prefers to a better signal-to-noise ratio for the probe beam. The off-resonance greatly depresses the double resonance pumping effect. A demonstration measurement for the electric field of microwave 1.18988 GHz, corresponding to the coupling resonance between two adjacent Rydberg states 44F_7/2 and 44F_9/2, gives a sensitivity of 55.79(23)nVcm^-1/Hz and a smallest discernible electric field of 78.9(33) nVcm^-1 in time scale of 500 ms.

Histone deacetylase AtSRT2 regulates salt tolerance during seed germination via repression of vesicle-associated membrane protein 714 (VAMP714) in Arabidopsis

Salt tolerance during seed germination is essential for seedling establishment under salt stress. Sirtuin-like proteins, NAD⁺ -dependent histone deacetylases, are involved in plant responses to abiotic stresses; however, the regulatory mechanism remains unknown. We elucidated the mechanism underlying AtSRT2 (a sirtuin-like protein)-mediated regulation of salt tolerance during seed germination in Arabidopsis. The AtSRT2 mutant srt2 exhibited significantly reduced seed germination percentages under salt stress; its targets were identified via chromatin immunoprecipitation coupled with ultra-high-throughput parallel DNA sequencing (ChIP-Seq) assay. Epistasis analysis was performed to identify AtSRT2-related pathways. Overexpression of SRT2.7, an AtSRT2 splice variant, rescued the salt-sensitive phenotype of mutant srt2. AtSRT2 histone deacetylation activity was important for salt tolerance during seed germination. The acetylation level of histone H4K8 locus in srt2-1 increased significantly under salt treatment. Vesicle-associated membrane protein 714 (VAMP714), a negative regulator of hydrogen peroxide (H₂ O₂ )-containing vesicle trafficking in cells, was identified as a target of AtSRT2. AtSRT2 regulated histone acetylation in the promoter region of VAMP714 and inhibited VAMP714 transcription under salt treatment. Seed germination percentage of double-mutant srt2-1vamp714 was close to that of single-mutant vamp714, and higher than that of single-mutant srt2 under salt stress. Hydrogen peroxide content and DNA damage increased after salt treatment in srt2 during seed germination. AtSRT2 regulates salt tolerance during seed germination through VAMP714 in Arabidopsis.

A soybean EF-Tu family protein GmEF8, an interactor of GmCBL1, enhances drought and heat tolerance in transgenic Arabidopsis and soybean

A soybean elongation factor Tu family (EF-Tu) protein, GmEF8, was determined to interact with GmCBL1, and GmEF8 expression was found to be induced by various abiotic stresses such as drought and heat. An ortholog of GmEF8 was identified in Arabidopsis, a T-DNA knockout line for which exhibited hypersensitivity to drought and heat stresses. Complementation with GmEF8 rescued the sensitivity of the Arabidopsis mutant to drought and heat stresses, and GmEF8 overexpression conferred drought and heat tolerance to transgenic Arabidopsis plants. In soybean, plants with GmEF8-overexpressing hairy roots (OE-GmEF8) exhibited enhanced drought and heat tolerance and had higher proline levels compared to plants with RNAi GmEF8-knockdown hairy roots (MR-GmEF8) and control hairy roots (EV). A number of drought-responsive genes, such as GmRD22 and GmP5CS, were induced in the OE-GmEF8 line compared to MR-GmEF8 and EV under normal growth conditions. These results suggest that GmEF8 has a positive role in regulating drought and heat stresses in Arabidopsis and soybean. This study reveals a potential role of the soybean GmEF8 gene in response to abiotic stresses, providing a foundation for further investigation into the complexities of stress signal transduction pathways.

Comprehensive Profiling of Tubby-Like Proteins in Soybean and Roles of the GmTLP8 Gene in Abiotic Stress Responses

Tubby-like proteins (TLPs) are transcription factors that are widely present in eukaryotes and generally participate in growth and developmental processes. Using genome databases, a total of 22 putative TLP genes were identified in the soybean genome, and unevenly distributed across 13 chromosomes. Phylogenetic analysis demonstrated that the predicted GmTLP proteins were divided into five groups (I-V). Gene structure, protein motifs, and conserved domains were analyzed to identify differences and common features among the GmTLPs. A three-dimensional protein model was built to show the typical structure of TLPs. Analysis of publicly available gene expression data showed that GmTLP genes were differentially expressed in response to abiotic stresses. Based on those data, GmTLP8 was selected to further explore the role of TLPs in soybean drought and salt stress responses. GmTLP8 overexpressors had improved tolerance to drought and salt stresses, whereas the opposite was true of GmTLP8-RNAi lines. 3,3-diaminobenzidine and nitro blue tetrazolium staining and physiological indexes also showed that overexpression of GmTLP8 enhanced the tolerance of soybean to drought and salt stresses; in addition, downstream stress-responsive genes were upregulated in response to drought and salt stresses. This study provides new insights into the function of GmTLPs in response to abiotic stresses.

Genome-Wide Analysis of the Soybean TIFY Family and Identification of GmTIFY10e and GmTIFY10g Response to Salt Stress

TIFY proteins play crucial roles in plant abiotic and biotic stress responses. Our transcriptome data revealed several TIFY family genes with significantly upregulated expression under drought, salt, and ABA treatments. However, the functions of the GmTIFY family genes are still unknown in abiotic stresses. We identified 38 GmTIFY genes and found that TIFY10 homologous genes have the most duplication events, higher selection pressure, and more obvious response to abiotic stresses compared with other homologous genes. Expression pattern analysis showed that GmTIFY10e and GmTIFY10g genes were significantly induced by salt stress. Under salt stress, GmTIFY10e and GmTIFY10g transgenic Arabidopsis plants showed higher root lengths and fresh weights and had significantly better growth than the wild type (WT). In addition, overexpression of GmTIFY10e and GmTIFY10g genes in soybean improved salt tolerance by increasing the PRO, POD, and CAT contents and decreasing the MDA content; on the contrary, RNA interference plants showed sensitivity to salt stress. Overexpression of GmTIFY10e and GmTIFY10g in Arabidopsis and soybean could improve the salt tolerance of plants, while the RNAi of GmTIFY10e and GmTIFY10g significantly increased sensitivity to salt stress in soybean. Further analysis demonstrated that GmTIFY10e and GmTIFY10g genes changed the expression levels of genes related to the ABA signal pathway, including GmSnRK2, GmPP2C, GmMYC2, GmCAT1, and GmPOD. This study provides a basis for comprehensive analysis of the role of soybean TIFY genes in stress response in the future.

Genome-Wide Analysis of the Soybean Calmodulin-Binding Protein 60 Family and Identification of GmCBP60A-1 Responses to Drought and Salt Stresses

Calmodulin-binding protein 60 (CBP60) members constitute a plant-specific protein family that plays an important role in plant growth and development. In the soybean genome, nineteen CBP60 members were identified and analyzed for their corresponding sequences and structures to explore their functions. Among GmCBP60A-1, which primarily locates in the cytomembrane, was significantly induced by drought and salt stresses. The overexpression of GmCBP60A-1 enhanced drought and salt tolerance in Arabidopsis, which showed better state in the germination of seeds and the root growth of seedlings. In the soybean hairy roots experiment, the overexpression of GmCBP60A-1 increased proline content, lowered water loss rate and malondialdehyde (MDA) content, all of which likely enhanced the drought and salt tolerance of soybean seedlings. Under stress conditions, drought and salt response-related genes showed significant differences in expression in hairy root soybean plants of GmCBP60A-1-overexpressing and hairy root soybean plants of RNAi. The present study identified GmCBP60A-1 as an important gene in response to salt and drought stresses based on the functional analysis of this gene and its potential underlying mechanisms in soybean stress-tolerance.

Genome-Wide Analysis of DEAD-box RNA Helicase Family in Wheat (Triticum aestivum) and Functional Identification of TaDEAD-box57 in Abiotic Stress Responses

DEAD-box RNA helicases constitute the largest subfamily of RNA helicase superfamily 2 (SF2), and play crucial roles in plant growth, development, and abiotic stress responses. Wheat is one of the most important cereal crops in worldwide, and abiotic stresses greatly restrict its production. So far, the DEAD-box RNA helicase family has yet to be characterized in wheat. Here, we performed a comprehensive genome-wide analysis of the DEAD-box RNA helicase family in wheat, including phylogenetic relationships, chromosomal distribution, duplication events, and protein motifs. A total of 141 TaDEAD-box genes were identified and found to be unevenly distributed across all 21 chromosomes. Whole genome/segmental duplication was identified as the likely main driving factor for expansion of the TaDEAD-box family. Expression patterns of the 141 TaDEAD-box genes were compared across different tissues and under abiotic stresses to identify genes to be important in growth or stress responses. TaDEAD-box57-3B was significantly up-regulated under multiple abiotic stresses, and was therefore selected for further analysis. TaDEAD-box57-3B was localized to the cytoplasm and plasma membrane. Ectopic expression of TaDEAD-box57-3B in Arabidopsis improved tolerance to drought and salt stress as measured by germination rates, root lengths, fresh weights, and survival rates. Transgenic lines also showed higher levels of proline and chlorophyll and lower levels of malonaldehyde (MDA) than WT plants in response to drought or salt stress. In response to cold stress, the transgenic lines showed significantly better growth and higher survival rates than WT plants. These results indicate that TaDEAD-box57-3B may increase tolerance to drought, salt, and cold stress in transgenic plants through regulating the degree of membrane lipid peroxidation. This study provides new insights for understanding evolution and function in the TaDEAD-box gene family.

Transcription factor BZR2 activates chitinase Cht20.2 transcription to confer resistance to wheat stripe rust

The brassinosteroid pathway promotes a variety of physiological processes in plants and the brassinosteroid insensitive1-ethylmethane sulfonate suppressor (BES)/brassinazole-resistant (BZR) functions as one of its key regulators. We previously showed that the BES/BZR-type transcription factor TaBZR2 mediates the drought stress response in wheat (Triticum aestivum) by directly upregulating the transcriptional activity of glutathione S-transferase 1. However, the function of TaBZR2 in plants under biotic stresses is unknown. In this study, we found that transcript levels of TaBZR2 were upregulated in response to inoculation with wheat stripe rust fungus (Puccinia striiformis f. sp. tritici, Pst) and treatment with flg22 or an elicitor-like protein of Pst, Pst322. Wheat lines overexpressing TaBZR2 conferred increased resistance, whereas TaBZR2-RNAi lines exhibited decreased resistance to multiple races of Pst. TaBZR2 targeted the promoter of the chitinase gene TaCht20.2, activating its transcription. Knockdown of TaCht20.2 in wheat resulted in enhanced susceptibility to Pst, indicating the positive role of TaCht20.2 in wheat resistance. Upon Pst infection in vivo, the overexpression of TaBZR2 increased total chitinase activity, whereas RNAi-mediated silencing of TaBZR2 reduced total chitinase activity. Taken together, our results suggest that TaBZR2 confers broad-spectrum resistance to the stripe rust fungus by increasing total chitinase activity in wheat.

Genome-Wide Analysis of MADS-Box Genes in Foxtail Millet (Setaria italica L.) and Functional Assessment of the Role of SiMADS51 in the Drought Stress Response

MADS-box transcription factors play vital roles in multiple biological processes in plants. At present, a comprehensive investigation into the genome-wide identification and classification of MADS-box genes in foxtail millet (Setaria italica L.) has not been reported. In this study, we identified 72 MADS-box genes in the foxtail millet genome and give an overview of the phylogeny, chromosomal location, gene structures, and potential functions of the proteins encoded by these genes. We also found that the expression of 10 MIKC-type MADS-box genes was induced by abiotic stresses (PEG-6000 and NaCl) and exogenous hormones (ABA and GA), which suggests that these genes may play important regulatory roles in response to different stresses. Further studies showed that transgenic Arabidopsis and rice (Oryza sativa L.) plants overexpressing SiMADS51 had reduced drought stress tolerance as revealed by lower survival rates and poorer growth performance under drought stress conditions, which demonstrated that SiMADS51 is a negative regulator of drought stress tolerance in plants. Moreover, expression of some stress-related genes were down-regulated in the SiMADS51-overexpressing plants. The results of our study provide an overall picture of the MADS-box gene family in foxtail millet and establish a foundation for further research on the mechanisms of action of MADS-box proteins with respect to abiotic stresses.

Genome-Wide Analysis of the DUF4228 Family in Soybean and Functional Identification of GmDUF4228 -70 in Response to Drought and Salt Stresses

Domain of unknown function 4228 (DUF4228) proteins are a class of proteins widely found in plants, playing an important role in response to abiotic stresses. However, studies on the DUF4228 family in soybean (Glycine max L.) are sparse. In this study, we identified a total of 81 DUF4228 genes in soybean genome, named systematically based on their chromosome distributions. Results showed that these genes were unevenly distributed on the 20 chromosomes of soybean. The predicted soybean DUF4228 proteins were identified in three groups (Groups I-III) based on a maximum likelihood phylogenetic tree. Genetic structure analysis showed that most of the GmDUF4228 genes contained no introns. Expression profiling showed that GmDUF4228 genes were widely expressed in different organs and tissues in soybean. RNA-seq data were used to characterize the expression profiles of GmDUF4228 genes under the treatments of drought and salt stresses, with nine genes showing significant up-regulation under both drought and salt stress further functionally verified by promoter (cis-acting elements) analysis and quantitative real-time PCR (qRT-PCR). Due to its upregulation under drought and salt stresses based on both RNA-seq and qRT-PCR analyses, GmDUF4228-70 was selected for further functional analysis in transgenic plants. Under drought stress, the degree of leaf curling and wilting of the GmDUF4228-70-overexpressing (GmDUF4228-70-OE) line was lower than that of the empty vector (EV) line. GmDUF4228-70-OE lines also showed increased proline content, relative water content (RWC), and chlorophyll content, and decreased contents of malondialdehyde (MDA), H2O2, and O2-. Under salt stress, the changes in phenotypic and physiological indicators of transgenic plants were the same as those under drought stress. In addition, overexpression of the GmDUF4228-70 gene promoted the expression of marker genes under both drought and salt stresses. Taken together, the results indicated that GmDUF4228 genes play important roles in response to abiotic stresses in soybean.

Genomic-Wide Analysis of the PLC Family and Detection of GmPI-PLC7 Responses to Drought and Salt Stresses in Soybean

Phospholipase C (PLC) performs significant functions in a variety of biological processes, including plant growth and development. The PLC family of enzymes principally catalyze the hydrolysis of phospholipids in organisms. This exhaustive exploration of soybean GmPLC members using genome databases resulted in the identification of 15 phosphatidylinositol-specific PLC (GmPI-PLC) and 9 phosphatidylcholine-hydrolyzing PLC (GmNPC) genes. Chromosomal location analysis indicated that GmPLC genes mapped to 10 of the 20 soybean chromosomes. Phylogenetic relationship analysis revealed that GmPLC genes distributed into two groups in soybean, the PI-PLC and NPC groups. The expression patterns and tissue expression analysis showed that GmPLCs were differentially expressed in response to abiotic stresses. GmPI-PLC7 was selected to further explore the role of PLC in soybean response to drought and salt stresses by a series of experiments. Compared with the transgenic empty vector (EV) control lines, over-expression of GmPI-PLC7 (OE) conferred higher drought and salt tolerance in soybean, while the GmPI-PLC7-RNAi (RNAi) lines exhibited the opposite phenotypes. Plant tissue staining and physiological parameters observed from drought- and salt-stressed plants showed that stress increased the contents of chlorophyll, oxygen free radical (O2 -), hydrogen peroxide (H2O2) and NADH oxidase (NOX) to amounts higher than those observed in non-stressed plants. This study provides new insights in the functional analysis of GmPLC genes in response to abiotic stresses.

Genome-Wide Analysis of the C2 Domain Family in Soybean and Identification of a Putative Abiotic Stress Response Gene GmC2-148

Plant C2 domain proteins play essential biological functions in numerous plants. In this study, 180 soybean C2 domain genes were identified by screening. Phylogenetic relationship analysis revealed that C2 domain genes fell into three distinct groups with diverged gene structure and conserved functional domain. Chromosomal location analysis indicated that C2 domain genes mapped to 20 chromosomes. The transcript profiles based on RNA-seq data showed that GmC2-58, GmC2-88, and GmC2-148 had higher levels of expression under salt, drought, and abscisic acid (ABA) treatments. GmC2-148, encoding a cell membrane-localized protein, had the highest level of response to various treatments according to real-time quantitative polymerase chain reaction (RT-qPCR) analysis. Under salt and drought stresses, the soybean plants with GmC2-148 transgenic hairy roots showed delayed leaf rolling, a higher content of proline (Pro), and lower contents of H₂O₂, O^2- and malondialdehyde (MDA) compared to those of the empty vector (EV) plants. The results of transgenic Arabidopsis in salt and drought treatments were consistent with those in soybean treatments. In addition, the soybean plants with GmC2-148 transgenic hairy roots increased transcript levels of several abiotic stress-related marker genes, including COR47, NCDE3, NAC11, WRKY13, DREB2A, MYB84, bZIP44, and KIN1 which resulted in enhanced abiotic stress tolerance in soybean. These results indicate that C2 domain genes are involved in response to salt and drought stresses, and this study provides a genome-wide analysis of the C2 domain family in soybean.

Peptide transporter-related protein 2 plays an important role in glutathione transport of Streptococcus thermophilus

Streptococcus thermophilus is widely used as a starter culture in the fermentation of yogurt. Glutathione (GSH; γ-glutamyl-cysteinyl-glycine), as a tripeptide, has an important physiological role for Strep. thermophilus. However, the scope of the GSH transport proteins is still unexplored in this species. In the present study, 5 peptide transporter-related proteins (Ptrp) of Strep. thermophilus strain ST-1 were selected and then inactivated by gene insertion, respectively. Through detection and comparison of intracellular GSH content of mutant strain and wild strain, we identified 2 proteins, named Ptrp-2 and Ptrp-4, that might be related to GSH transport. Reverse-transcriptase quantitative PCR was performed to verify the gene expressions of these 2 possible GSH transport-related proteins, and it was finally determined that Ptrp-2 plays an important role in GSH transport of Strep. thermophilus. Milk fermentation experiments were further conducted to test the effect of Ptrp-2 on the characteristics of yogurt. The results showed that the fermented milk hardly curds using the mutant strain, indicating that Ptrp-2 is important for Strep. thermophilus as a yogurt starter.

Genomic Analysis of Soybean PP2A-B ' ' Family and Its Effects on Drought and Salt Tolerance

Abiotic stresses induce the accumulation of reactive oxygen species (ROS) and significantly affect plant growth. Protein phosphatase 2A (PP2A) plays an important role in controlling intracellular and extracellular ROS signals. However, the interaction between PP2A, ROS, and stress tolerance remains largely unclear. In this study, we found that the B ' ' subunit of PP2A (PP2A-B ' ' ) can be significantly induced and was analyzed using drought- and salt-induced soybean transcriptome data. Eighty-three soybean PP2A-B ' ' genes were identified from the soybean genome via homologous sequence alignment, which was distributed across 20 soybean chromosomes. Among soybean PP2A-B ' ' family genes, 26 GmPP2A-B ' ' members were found to be responsive to drought and salt stresses in soybean transcriptome data. Quantitative PCR (qPCR) analysis demonstrated that GmPP2A-B ' ' 71 had the highest expression levels under salt and drought stresses. Functional analysis demonstrated that overexpression of GmPP2A-B ' ' 71 in soybeans can improve plant tolerance to drought and salt stresses; however, the interference of GmPP2A-B ' ' 71 in soybean increased the sensibility to drought and salt stresses. Further analysis demonstrated that overexpression of GmPP2A-B ' ' 71 in soybean could enhance the expression levels of stress-responsive genes, particularly genes associated with ROS elimination. These results indicate that PP2A-B ' ' can promote plant stress tolerance by regulating the ROS signaling, which will contribute to improving the drought resistance of crops.

Genome-Wide Analysis of the Catharanthus roseus RLK1-Like in Soybean and GmCrRLK1L20 Responds to Drought and Salt Stresses

Abiotic stresses, such as drought and salinity, severely affects the growth, development and productivity of the plants. The Catharanthus roseus RLK1-like (CrRLK1L) protein kinase family is involved in several processes in the plant life cycle. However, there have been few studies addressing the functions of CrRLK1L proteins in soybean. In this study, 38 CrRLK1L genes were identified in the soybean genome (Glycine max Wm82.a2.v1). Phylogenetic analysis demonstrated that soybean CrRLK1L genes were grouped into clusters, cluster I, II, III. The chromosomal mapping demonstrated that 38 CrRLK1L genes were located in 14 of 20 soybean chromosomes. None were discovered on chromosomes 1, 4, 6, 7, 11, and 14. Gene structure analysis indicated that 73.6% soybean CrRLK1L genes were characterized by a lack of introns.15.7% soybean CrRLK1L genes only had one intron and 10.5% soybean CrRLK1L genes had more than one intron. Five genes were obtained from soybean drought- and salt-induced transcriptome databases and were found to be highly up-regulated. GmCrRLK1L20 was notably up-regulated under drought and salinity stresses, and was therefore studied further. Subcellular localization analysis revealed that the GmCrRLK1L20 protein was located in the cell membrane. The overexpression of the GmCrRLK1L20 gene in soybean hairy roots improved both drought tolerance and salt stresses and enhanced the expression of the stress-responsive genes GmMYB84, GmWRKY40, GmDREB-like, GmGST15, GmNAC29, and GmbZIP78. These results indicated that GmCrRLK1L20 could play a vital role in defending against drought and salinity stresses in soybean.

The Ankyrin-Repeat Gene GmANK114 Confers Drought and Salt Tolerance in Arabidopsis and Soybean

Ankyrin repeat (ANK) proteins are essential in cell growth, development, and response to hormones and environmental stresses. In the present study, 226 ANK genes were identified and classified into nine subfamilies according to conserved domains in the soybean genome (Glycine max L.). Among them, the GmANK114 was highly induced by drought, salt, and abscisic acid. The GmANK114 encodes a protein that belongs to the ANK-RF subfamily containing a RING finger (RF) domain in addition to the ankyrin repeats. Heterologous overexpression of GmANK114 in transgenic Arabidopsis improved the germination rate under drought and salt treatments compared to wild-type. Homologous overexpression of GmANK114 improved the survival rate under drought and salt stresses in transgenic soybean hairy roots. In response to drought or salt stress, GmANK114 overexpression in soybean hairy root showed higher proline and lower malondialdehyde contents, and lower H2O2 and O2- contents compared control plants. Besides, GmANK114 activated transcription of several abiotic stress-related genes, including WRKY13, NAC11, DREB2, MYB84, and bZIP44 under drought and salt stresses in soybean. These results provide new insights for functional analysis of soybean ANK proteins and will be helpful for further understanding how ANK proteins in plants adapt to abiotic stress.

GmNFYA13 Improves Salt and Drought Tolerance in Transgenic Soybean Plants

NF-YA transcription factors function in modulating tolerance to abiotic stresses that are serious threats to crop yields. In this study, GmNFYA13, an NF-YA gene in soybean, was strongly induced by salt, drought, ABA, and H₂O₂, and suppressed by tungstate, an ABA synthesis inhibitor. The GmNFYA13 transcripts were detected in different tissues in seedling and flowering stages, and the expression levels in roots were highest. GmNFYA13 is a nuclear localization protein with self-activating activity. Transgenic Arabidopsis plants overexpressing GmNFYA13 with higher transcript levels of stress-related genes showed ABA hypersensitivity and enhanced tolerance to salt and drought stresses compared with WT plants. Moreover, overexpression of GmNFYA13 resulted in higher salt and drought tolerance in OE soybean plants, while suppressing it produced the opposite results. In addition, GmNFYA13 could bind to the promoters of GmSALT3, GmMYB84, GmNCED3, and GmRbohB to regulate their expression abundance in vivo. The data in this study suggested that GmNFYA13 enhanced salt and drought tolerance in soybean plants.

Expression Analyses of Soybean VOZ Transcription Factors and the Role of GmVOZ1G in Drought and Salt Stress Tolerance

Vascular plant one-zinc-finger (VOZ) transcription factor, a plant specific one-zinc-finger-type transcriptional activator, is involved in regulating numerous biological processes such as floral induction and development, defense against pathogens, and response to multiple types of abiotic stress. Six VOZ transcription factor-encoding genes (GmVOZs) have been reported to exist in the soybean (Glycine max) genome. In spite of this, little information is currently available regarding GmVOZs. In this study, GmVOZs were cloned and characterized. GmVOZ genes encode proteins possessing transcriptional activation activity in yeast cells. GmVOZ1E, GmVOZ2B, and GmVOZ2D gene products were widely dispersed in the cytosol, while GmVOZ1G was primarily located in the nucleus. GmVOZs displayed a differential expression profile under dehydration, salt, and salicylic acid (SA) stress conditions. Among them, GmVOZ1G showed a significantly induced expression in response to all stress treatments. Overexpression of GmVOZ1G in soybean hairy roots resulted in a greater tolerance to drought and salt stress. In contrast, RNA interference (RNAi) soybean hairy roots suppressing GmVOZ1G were more sensitive to both of these stresses. Under drought treatment, soybean composite plants with an overexpression of hairy roots had higher relative water content (RWC). In response to drought and salt stress, lower malondialdehyde (MDA) accumulation and higher peroxidase (POD) and superoxide dismutase (SOD) activities were observed in soybean composite seedlings with an overexpression of hairy roots. The opposite results for each physiological parameter were obtained in RNAi lines. In conclusion, GmVOZ1G positively regulates drought and salt stress tolerance in soybean hairy roots. Our results will be valuable for the functional characterization of soybean VOZ transcription factors under abiotic stress.

Overexpression of GmNFYA5 confers drought tolerance to transgenic Arabidopsis and soybean plants

BACKGROUND

Crop productivity is challenged by abiotic stresses, among which drought stress is the most common. NF-Y genes, especially NF-YA genes, regulate tolerance to abiotic stress.

RESULTS

Soybean NF-Y gene GmNFYA5 was identified to have the highest transcript level among all 21 NF-YA genes in soybean (Glycine max L.) under drought stress. Drought-induced transcript of GmNFYA5 was suppressed by the ABA synthesis inhibitor naproxen (NAP). GmNFYA5 transcript was detected in various tissues at vegetative and reproductive growth stages with higher levels in roots and leaves than in other tissues, which was consist with the GmNFYA5 promoter: GUS fusion assay. Overexpression of GmNFYA5 in transgenic Arabidopsis plants caused enhanced drought tolerance in seedlings by decreasing stomatal aperture and water loss from leaves. Overexpression and suppression of GmNFYA5 in soybean resulted in increased and decreased drought tolerance, respectively, relative to plants with an empty vector (EV). Transcript levels of ABA-dependent genes (ABI2, ABI3, NCED3, LEA3, RD29A, P5CS1, GmWRKY46, GmNCED2 and GmbZIP1) and ABA-independent genes (DREB1A, DREB2A, DREB2B, GmDREB1, GmDREB2 and GmDREB3) in transgenic plants overexpressing GmNFYA5 were higher than those of wild-type plants under drought stress; suppression of GmNFYA5 transcript produced opposite results. GmNFYA5 probably regulated the transcript abundance of GmDREB2 and GmbZIP1 by binding to the promoters in vivo.

CONCLUSIONS

Our results suggested that overexpression of GmNFYA5 improved drought tolerance in soybean via both ABA-dependent and ABA-independent pathways.

Examination of Genomic and Transcriptomic Alterations in a Morphologically Stable Line, MU1, Generated by Intergeneric Pollination

Interspecific hybridization creates genetic variation useful for crop improvement. However, whether pollen from a different genus affects the genomic stability and/or transcriptome of the recipient species during intergeneric pollination has not been investigated. Here, we crossed japonica rice cv. Z12 with the maize accession B73 (pollen donor) and obtained a morphologically stable line, MU1, exhibiting moderate dwarfism, higher tiller number, and increased grain weight compared with Z12. To reveal the genetic basis of these morphological changes in MU1, we performed whole-genome resequencing of MU1 and Z12. Compared with Z12, MU1 showed 107,250 single nucleotide polymorphisms (SNPs) and 23,278 insertion/deletions (InDels). Additionally, 5'-upstream regulatory regions (5'UTRs) of 429 and 309 differentially expressed genes (DEGs) in MU1 contained SNPs and InDels, respectively, suggesting that a subset of these DEGs account for the variation in 5'UTRs. Transcriptome analysis revealed 2190 DEGs in MU1 compared with Z12. Genes up-regulated in MU1 were mainly involved in photosynthesis, generation of precursor metabolites, and energy and cellular biosynthetic processes; whereas those down-regulated in MU1 were involved in plant hormone signal transduction pathway and response to stimuli and stress processes. Quantitative PCR (qPCR) further identified the expression levels of the up- or down-regulated gene in plant hormone signal transduction pathway. The expression level changes of plant hormone signal transduction pathway may be significant for plant growth and development. These findings suggest that mutations caused by intergeneric pollination could be the important reason for changes of MU1 in agronomic traits.

The Soybean bZIP Transcription Factor Gene GmbZIP2 Confers Drought and Salt Resistances in Transgenic Plants

Abiotic stresses, such as drought and salt, are major environmental stresses, affecting plant growth and crop productivity. Plant bZIP transcription factors (bZIPs) confer stress resistances in harsh environments and play important roles in each phase of plant growth processes. In this research, 15 soybean bZIP family members were identified from drought-induced de novo transcriptomic sequences of soybean, which were unevenly distributed across 12 soybean chromosomes. Promoter analysis showed that these 15 genes were rich in ABRE, MYB and MYC cis-acting elements which were reported to be involved in abiotic stress responses. Quantitative real-time polymerase chain reaction (qRT-PCR) analysis indicated that 15 GmbZIP genes could be induced by drought and salt stress. GmbZIP2 was significantly upregulated under stress conditions and thus was selected for further study. Subcellular localization analysis revealed that the GmbZIP2 protein was located in the cell nucleus. qRT-PCR results show that GmbZIP2 can be induced by multiple stresses. The overexpression of GmbZIP2 in Arabidopsis and soybean hairy roots could improve plant resistance to drought and salt stresses. The result of differential expression gene analysis shows that the overexpression of GmbZIP2 in soybean hairy roots could enhance the expression of the stress responsive genes GmMYB48, GmWD40, GmDHN15, GmGST1 and GmLEA. These results indicate that soybean bZIPs played pivotal roles in plant resistance to abiotic stresses.

Genome-Wide Identification, Evolution, and Expression of GDSL-Type Esterase/Lipase Gene Family in Soybean

GDSL-type esterase/lipase proteins (GELPs) belong to the SGNH hydrolase superfamily and contain a conserved GDSL motif at their N-terminus. GELPs are widely distributed in nature, from microbes to plants, and play crucial roles in growth and development, stress responses and pathogen defense. However, the identification and functional analysis of GELP genes are hardly explored in soybean. This study describes the identification of 194 GELP genes in the soybean genome and their phylogenetic classification into 11 subfamilies (A-K). GmGELP genes are disproportionally distributed on 20 soybean chromosomes. Large-scale WGD/segmental duplication events contribute greatly to the expansion of the soybean GDSL gene family. The Ka/Ks ratios of more than 70% of duplicated gene pairs ranged from 0.1-0.3, indicating that most GmGELP genes were under purifying selection pressure. Gene structure analysis indicate that more than 74% of GmGELP genes are interrupted by 4 introns and composed of 5 exons in their coding regions, and closer homologous genes in the phylogenetic tree often have similar exon-intron organization. Further statistics revealed that approximately 56% of subfamily K members contain more than 4 introns, and about 28% of subfamily I members consist of less than 4 introns. For this reason, the two subfamilies were used to simulate intron gain and loss events, respectively. Furthermore, a new model of intron position distribution was established in current study to explore whether the evolution of multi-gene families resulted from the diversity of gene structure. Finally, RNA-seq data were used to investigate the expression profiles of GmGELP gene under different tissues and multiple abiotic stress treatments. Subsequently, 7 stress-responsive GmGELP genes were selected to verify their expression levels by RT-qPCR, the results were consistent with RNA-seq data. Among 7 GmGELP genes, GmGELP28 was selected for further study owing to clear responses to drought, salt and ABA treatments. Transgenic Arabidopsis thaliana and soybean plants showed drought and salt tolerant phenotype. Overexpression of GmGELP28 resulted in the changes of several physiological indicators, which allowed plants to adapt adverse conditions. In all, GmGELP28 is a potential candidate gene for improving the salinity and drought tolerance of soybean.

Genome-Wide Analysis of the GRAS Gene Family and Functional Identification of GmGRAS37 in Drought and Salt Tolerance

GRAS genes, which form a plant-specific transcription factor family, play an important role in plant growth and development and stress responses. However, the functions of GRAS genes in soybean (Glycine max) remain largely unknown. Here, 117 GRAS genes distributed on 20 chromosomes were identified in the soybean genome and were classified into 11 subfamilies. Of the soybean GRAS genes, 80.34% did not have intron insertions, and 54 pairs of genes accounted for 88.52% of duplication events (61 pairs). RNA-seq analysis demonstrated that most GmGRASs were expressed in 14 different soybean tissues examined and responded to multiple abiotic stresses. Results from quantitative real-time PCR analysis of six selected GmGRASs suggested that GmGRAS37 was significantly upregulated under drought and salt stress conditions and abscisic acid and brassinosteroid treatment; therefore, this gene was selected for further study. Subcellular localization analysis revealed that the GmGRAS37 protein was located in the plasma membrane, nucleus, and cytosol. Soybean hairy roots overexpressing GmGRAS37 had improved resistance to drought and salt stresses. In addition, these roots showed increased transcript levels of several drought- and salt-related genes. The results of this study provide the basis for comprehensive analysis of GRAS genes and insight into the abiotic stress response mechanism in soybean.

Overexpression of GmUBC9 Gene Enhances Plant Drought Resistance and Affects Flowering Time via Histone H2B Monoubiquitination

Ubiquitylation is a form of post-translational modification of proteins that can alter localization, functionality, degradation, or transcriptional activity within a cell. E2 ubiquitin-conjugating enzyme (UBC) and E3 ubiquitin ligases are the primary determinants of substrate specificity in the context of ubiquitin conjugation. Multiubiquitination modifies target proteins for 26S proteasome degradation, while monoubiquitination controls protein activation and localization. At present, research on the monoubiquitination, especially histone monoubiquitination, has mostly focused on model plants with relatively few on crop species. In this study, we identified 91 UBC-like genes in soybean. The chromosomal localization, phylogenetic relationships, gene structures, and putative cis-acting elements were evaluated. Furthermore, the tissue-specific expression patterns of UBC Class I genes under drought stress were also investigated. Among Class I genes, GmUBC9 induction in response to drought stress was evident, and so this gene was selected for further analysis. GmUBC9 localized to the nucleus and endoplasmic reticulum. The overexpression of GmUBC9 in Arabidopsis led to enhanced tolerance for drought conditions across a range of stages of development, while overexpression in soybean hairy roots similarly led to improvements in tolerance for drought conditions, increased proline content, and reduced MDA content in soybean seedlings compared to wild type plants. HISTONE MONOUBIQUITINATION 2 (HUB2), an E3-like protein involved in histone H2B ubiquitylation (H2Bub1), was found to interact with GmUBC9 through Y2H analysis and BiFC assays in Arabidopsis and soybean. Under drought conditions, the level of H2Bub1 increased, and transcription of drought response genes was activated in GmUBC9 transgenic Arabidopsis and soybean. In addition, GmUBC9 transgenic Arabidopsis and soybean showed a late-flowering phenotype and had increased expression levels of the flowering related genes FLC and MAF4. These findings indicate that GmUBC9 is important for drought stress response and regulation of flowering time in soybean.

Artificial modulation-free Pound-Drever-Hall method for laser frequency stabilization

We have proposed an artificial modulation-free Pound-Drever-Hall (PDH) method for laser frequency stabilization and demonstrated it via two-color polarization spectroscopy of Rydberg electromagnetically induced transparency (EIT) resonance in a room-temperature rubidium vapor. Due to the unique error signal profile, the conventional PDH method owns a large capture range in laser frequency locking. Here we manually construct a PDH error signal via a linear combination of polarization spectroscopies of the Rydberg EIT resonances without and with a magnetic field applied. The artificial modulation-free PDH error signal owns a subnatural linewidth dispersion curve as well as a large capture range with which we successfully stabilize the laser to an absolute atomic frequency reference in a long running time, immune to environmental fluctuation and even manmade impulse perturbation. This method can provide an absolute frequency reference based on atomic transition while keeping similar locking ability to provide corrections for frequency fluctuations over a broad bandwidth as the conventional PDH.

Functional Analysis of the Soybean GmCDPK3 Gene Responding to Drought and Salt Stresses

Plants have a series of response mechanisms to adapt when they are subjected to external stress. Calcium-dependent protein kinases (CDPKs) in plants function against a variety of abiotic stresses. We screened 17 CDPKs from drought- and salt-induced soybean transcriptome sequences. The phylogenetic tree divided CDPKs of rice, Arabidopsis and soybean into five groups (I-V). Cis-acting element analysis showed that the 17 CDPKs contained some elements associated with drought and salt stresses. Quantitative real-time PCR (qRT-PCR) analysis indicated that the 17 CDPKs were responsive after different degrees of induction under drought and salt stresses. GmCDPK3 was selected as a further research target due to its high relative expression. The subcellular localization experiment showed that GmCDPK3 was located on the membrane of Arabidopsis mesophyll protoplasts. Overexpression of GmCDPK3 improved drought and salt resistance in Arabidopsis. In the soybean hairy roots experiment, the leaves of GmCDPK3 hairy roots with RNA interference (GmCDPK3-RNAi) soybean lines were more wilted than those of GmCDPK3 overexpression (GmCDPK3-OE) soybean lines after drought and salt stresses. The trypan blue staining experiment further confirmed that cell membrane damage of GmCDPK3-RNAi soybean leaves was more severe than in GmCDPK3-OE soybean lines. In addition, proline (Pro) and chlorophyll contents were increased and malondialdehyde (MDA) content was decreased in GmCDPK3-OE soybean lines. On the contrary, GmCDPK3-RNAi soybean lines had decreased Pro and chlorophyll content and increased MDA. The results indicate that GmCDPK3 is essential in resisting drought and salt stresses.

The ABA-induced soybean ERF transcription factor gene GmERF75 plays a role in enhancing osmotic stress tolerance in Arabidopsis and soybean

BACKGROUND

Ethylene-responsive factors (ERFs) play important roles in plant growth and development and the response to adverse environmental factors, including abiotic and biotic stresses.

RESULTS

In the present study, we identified 160 soybean ERF genes distributed across 20 chromosomes that could be clustered into eight groups based on phylogenetic relationships. A highly ABA-responsive ERF gene, GmERF75, belonging to Group VII was further characterized. Subcellular localization analysis showed that the GmERF75 protein is localized in the nucleus, and qRT-PCR results showed that GmERF75 is responsive to multiple abiotic stresses and exogenous hormones. GmERF75-overexpressing Arabidopsis lines showed higher chlorophyll content compared to WT and mutants under osmotic stress. Two independent Arabidopsis mutations of AtERF71, a gene homologous to GmERF75, displayed shorter hypocotyls, and overexpression of GmERF75 in these mutants could rescue the short hypocotyl phenotypes. Overexpressing GmERF75 in soybean hairy roots improved root growth under exogenous ABA and salt stress.

CONCLUSIONS

These results suggested that GmERF75 is an important plant transcription factor that plays a critical role in enhancing osmotic tolerance in both Arabidopsis and soybean.