Ultralow Power Electronic Analog of a Biological Fitzhugh-Nagumo Neuron

Here, we introduce an electronic circuit that mimics the functionality of a biological spiking neuron following the Fitzhugh-Nagumo (FN) model. The circuit consists of a tunnel diode that exhibits negative differential resistance (NDR) and an active inductive element implemented by a single MOSFET. The FN neuron converts a DC voltage excitation into voltage spikes analogous to biological action potentials. We predict an energy cost of 2 aJ/cycle through detailed simulation and modeling for these FN neurons. Such an FN neuron is CMOS compatible and enables ultralow power oscillatory and spiking neural network hardware. We demonstrate that FN neurons can be used for oscillator-based computing in a coupled oscillator network to form an oscillator Ising machine (OIM) that can solve computationally hard NP-complete max-cut problems while showing robustness toward process variations.

GaAs Mid-IR Electrically Tunable Metasurfaces

In this work, we explore III-V based metal-semiconductor-metal structures for tunable metasurfaces. We use an epitaxial transfer technique to transfer a III-V thin film directly on metallic surfaces, realizing III-V metal-semiconductor-metal (MSM) structures without heavily doped semiconductors as substitutes for metal layers. The device platform consists of gold metal layers with a p-i-n GaAs junction. The target resonance wavelength can be tuned by modifying the geometry of the top metal grating on the GaAs, while systematic resonance tunability has been shown through the modulation of various carrier concentration injections in the mid-IR range. Electrically tunable metasurfaces with multilevel biasing can serve as a fundamental building block for electrically tunable metasurfaces. We believe that our demonstration can contribute to understanding the optical tuning of III-V under various biased conditions, inducing changes in metasurfaces.

Monolithic III-V on Metal for Thermal Metasurfaces

It has been proposed that metal-semiconductor-metal (MSM) structures can be used to tune the absorptivity of a metasurface at infrared wavelengths. Indium arsenide (InAs) is a low-band-gap, high-electron-mobility semiconductor that may enable rapid index tuning for dynamic control over the infrared spectrum. However, direct growth of III-V thin films on top of metals has typically resulted in small-grain, polycrystalline materials that are not amenable to high-quality devices. Previously, epitaxial wafers were used for this purpose. However, the epitaxial constraints required that InAs be used for both the tuning layer and the bottom "metallic" layer, limiting the range of accessible designs. In this work, we show a demonstration of direct growth of single-crystalline InAs on metal to build tunable absorbers/emitters in the infrared regime. The growth was carried out at a temperature of 300 °C by the low temperature templated liquid phase (LT-TLP) method. The size of InAs single-crystalline mesas is ∼2500 μm², enabling the desired device sizes. The proposed growth and device enable scalable and tunable infrared devices for various thermal-photonic applications.

Contact photolithography-free integration of patterned and semi-transparent indium tin oxide stimulation electrodes into polydimethylsiloxane-based heart-on-a-chip devices for streamlining physiological recordings

Controlled electrical stimulation is essential for evaluating the physiology of cardiac tissues engineered in heart-on-a-chip devices. However, existing stimulation techniques, such as external platinum electrodes or opaque microelectrode arrays patterned on glass substrates, have limited throughput, reproducibility, or compatibility with other desirable features of heart-on-a-chip systems, such as the use of tunable culture substrates, imaging accessibility, or enclosure in a microfluidic device. In this study, indium tin oxide (ITO), a conductive, semi-transparent, and biocompatible material, was deposited onto glass and polydimethylsiloxane (PDMS)-coated coverslips as parallel or point stimulation electrodes using laser-cut tape masks. ITO caused substrate discoloration but did not prevent brightfield imaging. ITO-patterned substrates were microcontact printed with arrayed lines of fibronectin and seeded with neonatal rat ventricular myocytes, which assembled into aligned cardiac tissues. ITO deposited as parallel or point electrodes was connected to an external stimulator and used to successfully stimulate micropatterned cardiac tissues to generate calcium transients or propagating calcium waves, respectively. ITO electrodes were also integrated into the cantilever-based muscular thin film (MTF) assay to stimulate and quantify the contraction of micropatterned cardiac tissues. To demonstrate the potential for multiple ITO electrodes to be integrated into larger, multiplexed systems, two sets of ITO electrodes were deposited onto a single substrate and used to stimulate the contraction of distinct micropatterned cardiac tissues independently. Collectively, these approaches for integrating ITO electrodes into heart-on-a-chip devices are relatively facile, modular, and scalable and could have diverse applications in microphysiological systems of excitable tissues.

Engineering Complex Synaptic Behaviors in a Single Device: Emulating Consolidation of Short-term Memory to Long-term Memory in Artificial Synapses via Dielectric Band Engineering

As one of the key neuronal activities associated with memory in the human brain, memory consolidation is the process of the transition of short-term memory (STM) to long-term memory (LTM), which transforms an external stimulus to permanently stored information. Here, we report the emulation of this complex synaptic function, consolidation of STM to LTM, in a single-crystal indium phosphide (InP) field effect transistor (FET)-based artificial synapse. This behavior is achieved via the dielectric band and charge trap lifetime engineering in a dielectric gate heterostructure of aluminum oxide and titanium oxide. We analyze the behavior of these complex synaptic functions by engineering a variety of action potential parameters, and the devices exhibit good endurance, long retention time (>10⁵ s), and high uniformity. Uniquely, this approach utilizes growth and device fabrication techniques which are scalable and back-end CMOS compatible, making this InP synaptic device a potential building block for neuromorphic computing.

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., V_g1 = -V_g2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm² (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between V_g1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |V_g| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.

Tunable Onset of Hydrogen Evolution in Graphene with Hot Electrons

Here, we show that the turn-on voltage for the hydrogen evolution reaction on a graphene surface can be tuned in a semiconductor-insulator-graphene (SIG) device immersed in a solution. Specifically, it is shown that the hydrogen evolution reaction (HER) onset for the graphene can shift by >0.8 V by application of a voltage across a graphene-Al₂O₃-silicon junction. We show that this shift occurs due to the creation of a hot electron population in graphene due to tunneling from the Si to graphene. Through control experiments, we show that the presence of the graphene is necessary for this behavior. By analyzing the silicon, graphene, and solution current components individually, we find an increase in the silicon current despite a fixed graphene-silicon voltage, corresponding to an increase in the HER current. This additional silicon current appears to directly drive the electrochemical reaction, without modifying the graphene current. We term this current "direct injection current" and hypothesize that this current occurs due to electrons injected from the silicon into graphene that drives the HER before any electron-electron scattering occurs in the graphene. To further determine whether hot electrons injected at different energies could explain the observed total solution current, the nonequilibrium electron dynamics was studied using a 2D ensemble Monte Carlo Boltzmann transport equation (MCBTE) solver. By rigorously considering the key scattering mechanisms, we show that the injected hot electrons can significantly increase the available electron flux at high energies. These results show that semiconductor-insulator-graphene devices are a platform which can tune the electrochemical reaction rate via multiple mechanisms.

High Quantum Efficiency Hot Electron Electrochemistry

Using hot electrons to drive electrochemical reactions has drawn considerable interest in driving high-barrier reactions and enabling efficient solar to fuel conversion. However, the conversion efficiency from hot electrons to electrochemical products is typically low due to high hot electron scattering rates. Here, it is shown that the hydrogen evolution reaction (HER) in an acidic solution can be efficiently modulated by hot electrons injected into a thin gold film by an Au-Al₂O₃-Si metal-insulator-semiconductor (MIS) junction. Despite the large scattering rates in gold, it is shown that the hot electron driven HER can reach quantum efficiencies as high as ∼85% with a shift in the onset of hydrogen evolution by ∼0.6 V. By simultaneously measuring the currents from the solution, gold, and silicon terminals during the experiments, we find that the HER rate can be decomposed into three components: (i) thermal electron, corresponding to the thermal electron distribution in gold; (ii) hot electron, corresponding to electrons injected from silicon into gold which drive the HER before fully thermalizing; and (iii) silicon direct injection, corresponding to electrons injected from Si into gold that drive the HER before electron-electron scattering occurs. Through a series of control experiments, we eliminate the possibility of the observed HER rate modulation coming from lateral resistivity of the thin gold film, pinholes in the gold, oxidation of the MIS device, and measurement circuit artifacts. Next, we theoretically evaluate the feasibility of hot electron injection modifying the available supply of electrons. Considering electron-electron and electron-phonon scattering, we track how hot electrons injected at different energies interact with the gold-solution interface as they scatter and thermalize. The simulator is first used to reproduce other published experimental pump-probe hot electron measurements, and then simulate the experimental conditions used here. These simulations predict that hot electron injection first increases the supply of electrons to the gold-solution interface at higher energies by several orders of magnitude and causes a peaked electron interaction with the gold-solution interface at the electron injection energy. The first prediction corresponds to the observed hot electron electrochemical current, while the second prediction corresponds to the observed silicon direct injection current. These results indicate that MIS devices offer a versatile platform for hot electron sources that can efficiently drive electrochemical reactions.

Confined Liquid-Phase Growth of Crystalline Compound Semiconductors on Any Substrate

The growth of crystalline compound semiconductors on amorphous and non-epitaxial substrates is a fundamental challenge for state-of-the-art thin-film epitaxial growth techniques. Direct growth of materials on technologically relevant amorphous surfaces, such as nitrides or oxides results in nanocrystalline thin films or nanowire-type structures, preventing growth and integration of high-performance devices and circuits on these surfaces. Here, we show crystalline compound semiconductors grown directly on technologically relevant amorphous and non-epitaxial substrates in geometries compatible with standard microfabrication technology. Furthermore, by removing the traditional epitaxial constraint, we demonstrate an atomically sharp lateral heterojunction between indium phosphide and tin phosphide, two materials with vastly different crystal structures, a structure that cannot be grown with standard vapor-phase growth approaches. Critically, this approach enables the growth and manufacturing of crystalline materials without requiring a nearly lattice-matched substrate, potentially impacting a wide range of fields, including electronics, photonics, and energy devices.

Mimicking Biological Synaptic Functionality with an Indium Phosphide Synaptic Device on Silicon for Scalable Neuromorphic Computing

Neuromorphic or "brain-like" computation is a leading candidate for efficient, fault-tolerant processing of large-scale data as well as real-time sensing and transduction of complex multivariate systems and networks such as self-driving vehicles or Internet of Things applications. In biology, the synapse serves as an active memory unit in the neural system and is the component responsible for learning and memory. Electronically emulating this element via a compact, scalable technology which can be integrated in a three-dimensional (3-D) architecture is critical for future implementations of neuromorphic processors. However, present day 3-D transistor implementations of synapses are typically based on low-mobility semiconductor channels or technologies that are not scalable. Here, we demonstrate a crystalline indium phosphide (InP)-based artificial synapse for spiking neural networks that exhibits elasticity, short-term plasticity, long-term plasticity, metaplasticity, and spike timing-dependent plasticity, emulating the critical behaviors exhibited by biological synapses. Critically, we show that this crystalline InP device can be directly integrated via back-end processing on a Si wafer using a SiO₂ buffer without the need for a crystalline seed, enabling neuromorphic devices that can be implemented in a scalable and 3-D architecture. Specifically, the device is a crystalline InP channel field-effect transistor that interacts with neuron spikes by modification of the population of filled traps in the MOS structure itself. Unlike other transistor-based implementations, we show that it is possible to mimic these biological functions without the use of external factors (e.g., surface adsorption of gas molecules) and without the need for the high electric fields necessary for traditional flash-based implementations. Finally, when exposed to neuronal spikes with a waveform similar to that observed in the brain, these devices exhibit the ability to learn without the need for any external potentiating/depressing circuits, mimicking the biological process of Hebbian learning.

Scalable Indium Phosphide Thin-Film Nanophotonics Platform for Photovoltaic and Photoelectrochemical Devices

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.

Bandgap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

Transition metal perovskite chalcogenides are a new class of versatile semiconductors with high absorption coefficient and luminescence efficiency. Polycrystalline materials synthesized by an iodine-catalyzed solid-state reaction show distinctive optical colors and tunable bandgaps across the visible range in photoluminescence, with one of the materials' external efficiency approaching the level of single-crystal InP and CdSe.

Hot electron-driven photocatalytic water splitting

We report measurements of photocatalytic water splitting using Au films with and without TiO₂ coatings.

Direct growth of single-crystalline III-V semiconductors on amorphous substrates

The III-V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III-V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III-V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III-V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III-V's on application-specific substrates by direct growth.

A Comparison of Photocurrent Mechanisms in Quasi-Metallic and Semiconducting Carbon Nanotube pn-Junctions

We present a comparative study of quasi-metallic (Eg ∼ 100 meV) and semiconducting (Eg ∼ 1 eV) suspended carbon nanotube pn-junctions introduced by electrostatic gating. While the built-in fields of the quasi-metallic carbon nanotubes (CNTs) are 1-2 orders of magnitude smaller than those of the semiconducting CNTs, their photocurrent is 2 orders of magnitude higher than the corresponding semiconducting CNT devices under the same experimental conditions. Here, the large exciton binding energy in semiconducting nanotubes (∼400 meV) makes it difficult for excitons to dissociate into free carriers that can contribute to an externally measured photocurent. As such, semiconducting nanotubes require a phonon to assist in the exciton dissociation process, in order to produce a finite photocurrent, while quasi-metallic nanotubes do not. The quasi-metallic nanotubes have much lower exciton binding energies (∼50 meV) as well as a continuum of electronic states to decay into and, therefore, do not require the absorption of a phonon in order to dissociate, making it much easier for these excitons to produce a photocurrent. We performed detailed simulations of the band energies in quasi-metallic and semiconducting nanotube devices in order to obtain the electric field profiles along the lengths of the nanotubes. These simulations predict maximum built-in electric field strengths of 2.3 V/μm for semiconducting and 0.032-0.22 V/μm for quasi-metallic nanotubes under the applied gate voltages used in this study.

Strain-induced indirect to direct bandgap transition in multilayer WSe2

Transition metal dichalcogenides, such as MoS2 and WSe2, have recently gained tremendous interest for electronic and optoelectronic applications. MoS2 and WSe2 monolayers are direct bandgap and show bright photoluminescence (PL), whereas multilayers exhibit much weaker PL due to their indirect optical bandgap. This presents an obstacle for a number of device applications involving light harvesting or detection where thicker films with direct optical bandgap are desired. Here, we experimentally demonstrate a drastic enhancement in PL intensity for multilayer WSe2 (2-4 layers) under uniaxial tensile strain of up to 2%. Specifically, the PL intensity of bilayer WSe2 is amplified by ∼ 35× , making it comparable to that of an unstrained WSe2 monolayer. This drastic PL enhancement is attributed to an indirect to direct bandgap transition for strained bilayer WSe2, as confirmed by density functional theory (DFT) calculations. Notably, in contrast to MoS2 multilayers, the energy difference between the direct and indirect bandgaps of WSe2 multilayers is small, thus allowing for bandgap crossover at experimentally feasible strain values. Our results present an important advance toward controlling the band structure and optoelectronic properties of few-layer WSe2 via strain engineering, with important implications for practical device applications.

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts

The development of low-resistance source/drain contacts to transition-metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x < 3), a high work function material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties.

A direct thin-film path towards low-cost large-area III-V photovoltaics

III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1–3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth processes. The films exhibit electron mobilities as high as 500 cm²/V-s and minority carrier lifetimes as long as 2.5 ns. Furthermore, under 1-sun equivalent illumination, photoluminescence efficiency measurements indicate that an open circuit voltage of up to 930 mV can be achieved, only 40 mV lower than measured on a single crystal reference wafer.

Ballistic InAs nanowire transistors

Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ~150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theoretically assessed by a method that combines Fermi's golden rule and a numerical Schrödinger-Poisson simulation to determine the surface scattering potential with the theoretical calculations being consistent with experiments. Near ballistic transport (~80% of the ballistic limit) is demonstrated experimentally for transistors with a channel length of ~60 nm, owing to the long mean free path of electrons in InAs NWs.

Multifunctional, flexible electronic systems based on engineered nanostructured materials

The development of flexible electronic systems has been extensively researched in recent years, with the goal of expanding the potential scope and market of modern electronic devices in the areas of computation, communications, displays, sensing and energy. Uniquely, the use of soft polymeric substrates enables the incorporation of advanced features beyond mechanical bendability and stretchability. In this paper, we describe several functionalities which can be achieved using engineered nanostructured materials. In particular, reversible binding, self-cleaning, antireflective and shape-reconfigurable properties are introduced for the realization of multifunctional, flexible electronic devices. Examples of flexible systems capable of spatial mapping and/or responding to external stimuli are also presented as a new class of user-interactive devices.

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics.

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The 2-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.

A compact neutron generator using a field ionization source

Field ionization as a means to create ions for compact and rugged neutron sources is pursued. Arrays of carbon nano-fibers promise the high field-enhancement factors required for efficient field ionization. We report on the fabrication of arrays of field emitters with a density up to 10(6) tips∕cm(2) and measure their performance characteristics using electron field emission. The critical issue of uniformity is discussed, as are efforts towards coating the nano-fibers to enhance their lifetime and surface properties.

Quantum confinement effects in nanoscale-thickness InAs membranes

Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.

Roll-to-roll anodization and etching of aluminum foils for high-throughput surface nanotexturing

A high-throughput process for nanotexturing of hard and soft surfaces based on the roll-to-roll anodization and etching of low-cost aluminum foils is presented. The process enables the precise control of surface topography, feature size, and shape over large areas thereby presenting a highly versatile platform for fabricating substrates with user-defined, functional performance. Specifically, the optical and surface wetting properties of the foil substrates were systematically characterized and tuned through the modulation of the surface texture. In addition, textured aluminum foils with pore and bowl surface features were used as zeptoliter reaction vessels for the well-controlled synthesis of inorganic, organic, and plasmonic nanomaterials, demonstrating yet another powerful potential use of the presented approach.

Nanoscale semiconductor "X" on substrate "Y"--processes, devices, and applications

Recent advancements in the integration of nanoscale, single-crystalline semiconductor 'X' on substrate 'Y' (XoY) for use in transistor and sensor applications are presented. XoY is a generic materials framework for enabling the fabrication of various novel devices, without the constraints of the original growth substrates. Two specific XoY process schemes, along with their associated materials, device and applications are presented. In one example, the layer transfer of ultrathin III-V semiconductors with thicknesses of just a few nanometers on Si substrates is explored for use as energy-efficient electronics, with the fabricated devices exhibiting excellent electrical properties. In the second example, contact printing of nanowire-arrays on thin, bendable substrates for use as artificial electronic-skin is presented. Here, the devices are capable of conformably covering any surface, and providing a real-time, two-dimensional mapping of external stimuli for the realization of smart functional surfaces. This work is an example of the emerging field of "translational nanotechnology" as it bridges basic science of nanomaterials with practical applications.

Neoplastic transformation in vitro by mixed beams of high-energy iron ions and protons

The radiation environment in space is complex in terms of both the variety of charged particles and their dose rates. Simulation of such an environment for experimental studies is technically very difficult. However, with the variety of beams available at the National Space Research Laboratory (NSRL) at Brookhaven National Laboratory (BNL) it is possible to ask questions about potential interactions of these radiations. In this study, the end point examined was transformation in vitro from a preneoplastic to a neoplastic phenotype. The effects of 1 GeV/n iron ions and 1 GeV/n protons alone provided strong evidence for suppression of transformation at doses ≤5 cGy. These ions were also studied in combination in so-called mixed-beam experiments. The specific protocols were a low dose (10 cGy) of protons followed after either 5-15 min (immediate) or 16-24 h (delayed) by 1 Gy of iron ions and a low dose (10 cGy) of iron ions followed after either 5-15 min or 16-24 h by 1 Gy of protons. Within experimental error the results indicated an additive interaction under all conditions with no evidence of an adaptive response, with the one possible exception of 10 cGy iron ions followed immediately by 1 Gy protons. A similar challenge dose protocol was also used in single-beam studies to test for adaptive responses induced by 232 MeV/n protons and (137)Cs γ radiation and, contrary to expectations, none were observed. However, subsequent tests of 10 cGy of (137)Cs γ radiation followed after either 5-15 min or 8 h by 1 Gy of (137)Cs γ radiation did demonstrate an adaptive response at 8 h, pointing out the importance of the interval between adapting and challenge dose. Furthermore, the dose-response data for each ion alone indicate that the initial adapting dose of 10 cGy used in the mixed-beam setting may have been too high to see any potential adaptive response.

Ordered arrays of dual-diameter nanopillars for maximized optical absorption

Optical properties of highly ordered Ge nanopillar arrays are tuned through shape and geometry control to achieve the optimal absorption efficiency. Increasing the Ge materials filling ratio is shown to increase the reflectance while simultaneously decreasing the transmittance, with the absorbance showing a strong diameter dependency. To enhance the broad band optical absorption efficiency, a novel dual-diameter nanopillar structure is presented, with a small diameter tip for minimal reflectance and a large diameter base for maximal effective absorption coefficient. The enabled single-crystalline absorber material with a thickness of only 2 μm exhibits an impressive absorbance of ∼99% over wavelengths, λ = 300-900 nm. These results enable a viable and convenient route toward shape-controlled nanopillar-based high-performance photonic devices.

Black Ge based on crystalline/amorphous core/shell nanoneedle arrays

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips ( approximately 4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence ( approximately 75 degrees ) and for relatively short nanoneedle lengths ( approximately 1 mum). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of approximately 1 eV. The reported black Ge could potentially have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

The effect of dose rate on radiation-induced neoplastic transformation in vitro by low doses of low-LET radiation

The dependence of the incidence of radiation-induced cancer on the dose rate of the radiation exposure is a question of considerable importance to the estimation of risk of cancer induction by low-dose-rate radiation. Currently a dose and dose-rate effectiveness factor (DDREF) is used to convert high-dose-rate risk estimates to low dose rates. In this study, the end point of neoplastic transformation in vitro has been used to explore this question. It has been shown previously that for low doses of low-LET radiation delivered at high dose rates, there is a suppression of neoplastic transformation frequency at doses less than around 100 mGy. In the present study, dose-response curves up to a total dose of 1000 mGy have been generated for photons from (125)I decay (approximately 30 keV) delivered at doses rates of 0.19, 0.47, 0.91 and 1.9 mGy/min. The results indicate that at dose rates of 1.9 and 0.91 mGy/min the slope of the induction curve is about 1.5 times less than that measured at high dose rate in previous studies with a similar quality of radiation (28 kVp mammographic energy X rays). In the dose region of 0 to 100 mGy, the data were equally well fitted by a threshold or linear no-threshold model. At dose rates of 0.19 and 0.47 mGy/min there was no induction of transformation even at doses up to 1000 mGy, and there was evidence for a possible suppressive effect. These results show that for this in vitro end point the DDREF is very dependent on dose rate and at very low doses and dose rates approaches infinity. The relative risks for the in vitro data compare well with those from epidemiological studies of breast cancer induction by low- and high-dose-rate radiation.

Neoplastic transformation in vitro by low doses of ionizing radiation: role of adaptive response and bystander effects

The shape of the dose-response curve for cancer induction by low doses of ionizing radiation is of critical importance to the assessment of cancer risk at such doses. Epidemiologic analyses are limited by sensitivity to doses typically greater than 50-100 mGy for low LET radiation. Laboratory studies allow for the examination of lower doses using cancer-relevant endpoints. One such endpoint is neoplastic transformation in vitro. It is known that this endpoint is responsive to both adaptive response and bystander effects. The relative balance of these processes is likely to play an important role in determining the shape of the dose-response curve at low doses. A factor that may influence this balance is cell density at time of irradiation. The findings reported in this paper indicate that the transformation suppressive effect of low doses previously seen following irradiation of sub-confluent cultures, and attributed to an adaptive response, is reduced for irradiated confluent cultures. However, even under these conditions designed to optimize the role of bystander effects the data do not fit a linear no-threshold model and are still consistent with the notion of a threshold dose for neoplastic transformation in vitro by low LET radiation.

Short-term continuous infusion of human parathyroid hormone 1-34 fragment is catabolic with decreased trabecular connectivity density accompanied by hypercalcemia in C57BL/J6 mice

Parathyroid hormone (PTH) stimulates bone resorption as well as bone formation in vivo and in organ culture. The catabolic actions of PTH have been recognized in patients with hyperparathyroidism, or with acute infusion of the N-terminal 1-34 fragment of human PTH (hPTH1-34). Whereas the anabolic actions of daily injection with PTH have been well studied in both humans and mice, the catabolic actions of PTH on murine bone remain to be defined. To do this we sought to create a model with short-term, sustained hyperparathyroidism using osmotic infusion pumps. We treated 10-week-old female C57BL/J6 mice with continuous infusion of hPTH1-34 (8.1 pmol/0.25 microl per h, equivalent to 40 microg/kg per day) or vehicle for 2 weeks, using Alzet osmotic pumps. Bone mineral density (BMD), serum total calcium, hPTH1-34, mouse intact PTH (mPTH1-84), osteocalcin and mouse tartrate-resistant acid phosphatase (mTRAP) activity, and microarchitectural variables of the distal femur were measured. Separately, we compared the effects of intermittent daily injection of hPTH1-34 (40 microg/kg per day) with continuous infusion of hPTH1-34 on BMD and bone markers. Exogenous hPTH1-34 was detected only in the PTH-infused mice. Both intermittent and continuous treatment with hPTH1-34 markedly suppressed endogenous mPTH1-84, but only the latter induced hypercalcemia. Daily PTH injection significantly increased both serum osteocalcin and mTRAP, while continuous PTH infusion showed a strong trend to stimulate mTRAP, with a slight but non-significant increase in osteocalcin. There were significant differences in BMD at all sites between animals treated with the same daily dose of intermittent and continuous hPTH1-34. Micro-computed tomography (muCT) analysis of the distal femurs revealed that hPTH1-34 infusion significantly decreased trabecular connectivity density (P<0.05). Thus, the murine bone response to continuous PTH infusion was quite different from that seen with daily PTH injection. Short-term infusion of hPTH1-34 appears to be a good model to study the mechanisms underlying the catabolic action of PTH in mice.

A potent small molecule, nonpeptide inhibitor of cathepsin K (SB 331750) prevents bone matrix resorption in the ovariectomized rat

Inhibition of the cyteine proteinase, cathepsin K (E.C. 3.4.22.38) has been postulated as a means to control osteoclast-mediated bone resorption. The preferred animal models for evaluation of antiresorptive activity are in the rat. However, the development of compounds that inhibit rat cathepsin K has proven difficult because the human and rat enzymes differ in key residues in the active site. In this study, a potent, nonpeptide inhibitor of rat cathepsin K (K(i) = 4.7 nmol/L), 5-(2-morpholin-4-yl-ethoxy)-benzofuran-2-carboxylic acid ((S)-3-methyl-1-(3-oxo-1-[2-(3-pyridin-2-yl-phenyl)-ethenoyl]-azepan-4-ylcarbanoyl)-butyl)-amide (SB 331750), is described, which is efficacious in rat models of bone resorption. SB 331750 potently inhibited human cathepsin K activity in vitro (K(i) = 0.0048 nmol/L) and was selective for human cathepsin K vs. cathepsins B (K(i) = 100 nmol/L), L (0.48 nmol/L), or S (K(i) = 14.3 nmol/L). In an in situ enzyme assay, SB 331750 inhibited osteoclast-associated cathepsin activity in tissue sections containing human osteoclasts (IC(50) approximately 60 nmol/L) and this translated into potent inhibition of human osteoclast-mediated bone resorption in vitro (IC(50) approximately 30 nmol/L). In vitro, SB 331750 partially, but dose-dependently, prevented the parathyroid hormone-induced hypercalcemia in an acute rat model of bone resorption. To evaluate the ability of SB 331750 to inhibit bone matrix degradation in vivo, it was administered for 4 weeks at 3, 10, or 30 mg/kg, intraperitoneally (i.p.), u.i.d. in the ovariectomized (ovx) rat. Both 10 and 30 mg/kg doses of compound prevented the ovx-induced elevation in urinary deoxypyridinoline and prevented the ovx-induced increase in percent eroded perimeter. Histological evaluation of the bones from compound-treated animals indicated that SB 331750 retarded bone matrix degradation in vivo at all three doses. The inhibition of bone resorption at the 10 and 30 mg/kg doses resulted in prevention of the ovx-induced reduction in percent trabecular area, trabecular number, and increase in trabecular spacing. These effects on bone resorption were also reflected in inhibition of the ovx-induced loss in trabecular bone volume as assessed using microcomputerized tomography (microCT; approximately 60% at 30 mg/kg). Together, these data indicate that the cathepsin K inhibitor, SB 331750, prevented bone resorption in vivo and this inhibition resulted in prevention of ovariectomy-induced loss in trabecular structure.

Antagonism of the osteoclast vitronectin receptor with an orally active nonpeptide inhibitor prevents cancellous bone loss in the ovariectomized rat

An orally active, nonpeptide Arg-Gly-Asp (RGD) mimetic alpha(v)beta3 antagonist, (S)-3-Oxo-8-[2-[6-(methylamino)-pyridin-2-yl]-1-ethoxy]-2-(2,2,2-trifluoroethyl)-2,3,4,5-tetrahydro-1H-2-benzazepine-4-acetic acid (compound 1), has been generated, which prevented net bone loss and inhibited cancellous bone turnover in vivo. The compound binds alpha(v)beta3 and the closely related integrin alpha(v)beta5 with low nanomolar affinity but binds only weakly to the related integrins alpha(IIb)beta3, and alpha5beta1. Compound 1 inhibited alpha(v)beta3-mediated cell adhesion with an IC50 = 3 nM. More importantly, the compound inhibited human osteoclast-mediated bone resorption in vitro with an IC50 = 11 nM. In vivo, compound 1 inhibited bone resorption in a dose-dependent fashion, in the acute thyroparathyroidectomized (TPTX) rat model of bone resorption with a circulating EC50 approximately 20 microM. When dosed orally at 30 mg/kg twice a day (b.i.d.) in the chronic ovariectomy (OVX)-induced rat model of osteopenia, compound 1 also prevented bone loss. At doses ranging from 3 to 30 mg/kg b.i.d., compound 1 partially prevented the OVX-induced increase in urinary deoxypyridinoline. In addition, the compound prevented the OVX-induced reduction in cancellous bone volume (BV), trabecular number (Tb.N), and trabecular thickness (Tb.Th), as assessed by quantitative microcomputerized tomography (microCT) and static histomorphometry. Furthermore, both the 10-mg/kg and 30-mg/kg doses of compound prevented the OVX-induced increase in bone turnover, as measured by percent osteoid perimeter (%O.Pm). Together, these data indicate that the alpha(v)beta3 antagonist compound 1 inhibits OVX-induced bone loss. Mechanistically, compound 1 prevents bone loss in vivo by inhibiting osteoclast-mediated bone resorption, ultimately preventing cancellous bone turnover.

Disease-modifying activity of SB 273005, an orally active, nonpeptide alphavbeta3 (vitronectin receptor) antagonist, in rat adjuvant-induced arthritis

OBJECTIVE

To evaluate the effects of SB 273005, a potent, orally active nonpeptide antagonist of the integrin avbeta3 vitronectin receptor, on joint integrity in rats with adjuvant-induced arthritis (AIA).

METHODS

Male Lewis rats with AIA were orally dosed either prophylactically (days 0-20) or therapeutically (days 10-20) with SB 273005. Efficacy was determined by measurement of paw inflammation, assessment of bone mineral density using dual-energy x-ray absorptiometry (DEXA), magnetic resonance imaging (MRI), and histologic evaluation.

RESULTS

SB 273005 is a potent antagonist of the closely related integrins, avbeta3 (Ki = 1.2 nM) and alphavbeta5 (Ki = 0.3 nM). When SB 273005 was administered prophylactically to AIA rats twice per day, it inhibited paw edema at doses of 10, 30, and 60 mg/kg, by 40%, 50%, and 52%, respectively. Therapeutic administration twice daily was also effective, and a reduction in paw edema was observed at 30 mg/kg and 60 mg/kg of the antagonist (by 36% and 48%, respectively). SB 273005 was also effective when administered once per day, both prophylactically and therapeutically. Significant improvement in joint integrity in treated rats was shown using DEXA and MRI analyses. These findings were confirmed histologically, and significant protection of bone, cartilage, and soft tissue was observed within the joint.

CONCLUSION

Symptoms of AIA in rats were significantly reduced by either prophylactic or therapeutic treatment with the alphavbeta3 antagonist, SB 273005. Measurements of paw inflammation and of bone, cartilage, and soft tissue structure indicated that this compound exerts a protective effect on joint integrity and thus appears to have disease-modifying properties.

Disease-modifying activity of SB 242235, a selective inhibitor of p38 mitogen-activated protein kinase, in rat adjuvant-induced arthritis

OBJECTIVE

To evaluate the effects of SB 242235, a potent and selective inhibitor of p38 mitogen-activated protein (MAP) kinase, on joint integrity in rats with adjuvant-induced arthritis (AIA).

METHODS

Male Lewis rats with AIA were orally treated either prophylactically (days 0-20) or therapeutically (days 10-20) with SB 242235. Efficacy was determined by measurements of paw inflammation, dual-energy x-ray absorptiometry for bone-mineral density (BMD), magnetic resonance imaging (MRI), microcomputed tomography (CT), and histologic evaluation. Serum tumor necrosis factor alpha (TNFalpha) in normal (non-AIA) rats and serum interleukin-6 (IL-6) levels in rats with AIA were measured as markers of the antiinflammatory effects of the compound.

RESULTS

SB 242235 inhibited lipopolysaccharide-stimulated serum levels of TNFalpha in normal rats, with a median effective dose of 3.99 mg/kg. When SB 242235 was administered to AIA rats prophylactically on days 0-20, it inhibited paw edema at 30 mg/kg and 10 mg/kg per day by 56% and 33%, respectively. Therapeutic administration on days 10-20 was also effective, and inhibition of paw edema was observed at 60, 30, and 10 mg/kg (73%, 51%, and 19%, respectively). Significant improvement in joint integrity was demonstrated by showing normalization of BMD and also by MRI and micro-CT analysis. Protection of bone, cartilage, and soft tissues was also shown histologically. Serum IL-6 levels were decreased in AIA rats treated with the 60 mg/kg dose of compound.

CONCLUSION

Symptoms of AIA in rats were significantly reduced by both prophylactic and therapeutic treatment with the p38 MAP kinase inhibitor, SB 242235. Results from measurements of paw inflammation, assessment of BMD, MRI, and micro-CT indicate that this compound exerts a protective effect on joint integrity, and thus appears to have disease-modifying properties.

Cathepsin K knockout mice develop osteopetrosis due to a deficit in matrix degradation but not demineralization

Cathepsin K is a cysteine protease expressed predominantly in osteoclasts. Activated cathepsin K cleaves key bone matrix proteins and is believed to play an important role in degrading the organic phase of bone during bone resorption. Mutations in the human cathepsin K gene have been demonstrated to be associated with a rare skeletal dysplasia, pycnodysostosis. The degree of functional activity of the mutated forms of cathepsin K in these individuals has not been elucidated, but is predicted to be low or absent. To study the role of cathepsin K in bone resorption, we have generated mice deficient in the cathepsin K gene. Histologic and radiographic analysis of the mice revealed osteopetrosis of the long bones and vertebrae, and abnormal joint morphology. X-ray microcomputerized tomography images allowed quantitation of the increase in bone volume, trabecular thickness, and trabecular number in both the primary spongiosa and the metaphysis of the proximal tibiae. Not all bones were similarly affected. Chondrocyte differentiation was normal. The mice also had abnormalities in hematopoietic compartments, particularly decreased bone marrow cellularity and splenomegaly. The heterozygous animals appeared normal. Close histologic examination of bone histology revealed fully differentiated osteoclasts apposed to small regions of demineralized bone. This strongly suggests that cathepsin K-deficient osteoclasts are capable of demineralizing the extracellular matrix but are unable to adequately remove the demineralized bone. This is entirely consistent with the proposed function of cathepsin K as a matrix-degrading proteinase in bone resorption.

Binding of the renal epithelial cell line LLC-PK1 to laminin is regulated by protein kinase C

The alpha6beta1 integrin heterodimer has been implicated in the mediation of renal epithelial cell binding to laminin, and it has been suggested that this binding is important for renal morphogenesis and development. Studies of nonrenal cells have suggested that the functional activity of alpha6beta1 integrin is regulated by protein kinase C (PKC) activity. In this study, the binding of a renal epithelial cell line, LLC-PK1, to laminin was characterized and the role of PKC activity in the modulation of binding was investigated. LLC-PK1 cells bound to laminin-coated surfaces in a time- and laminin concentration-dependent manner. Binding was strongly inhibited by anti-beta1 integrin antibodies and by anti-alpha6 integrin antibodies. Antibodies against alpha2 integrin and a3 integrin had little inhibitory effect. Cells bound to both whole laminin and laminin fragment E8, i.e., the fragment to which the alpha6beta1 integrin heterodimer binds. Exposure of cells to PKC activators for as little as 2 h enhanced cell binding to laminin approximately twofold, in a protein synthesis-dependent manner. PKC inhibitors antagonized this effect. PKC-stimulated binding was also inhibited by anti-beta1 integrin and anti-alpha6 integrin antibodies. PKC activation did not alter expression of beta1 integrin subunits at the cell surface after short time periods (2 to 4 h), but expression was increased after longer time periods (24 h). These results indicate that the renal epithelial cell line LLC-PK1 binds to laminin via the alpha6betal integrin heterodimer and binding is enhanced by PKC activation. The PKC-mediated enhancement of binding requires protein synthesis and is mediated in part by activation of surface alpha6beta1 integrin.

Relationship between lipoprotein (a) and both stroke and carotid atheroma

In vitro studies provide mechanisms by which elevated lipoprotein (a) [Lp(a)] concentrations may promote both thrombosis and atherogenesis. Case-control studies have reported raised Lp(a) concentrations in patients with stroke, but prospective studies have failed to confirm the association. A potential confounding factor is that Lp(a) may rise acutely after stroke. We determined Lp(a) concentrations in 164 patients studied at least 21 days after stroke or transient ischaemic attack, and in 91 controls. In the patient group we correlated Lp(a) concentrations with both the degree of carotid stenosis estimated on duplex ultrasonography, and with stroke subtype (large vessel disease, lacunar infarction, and cardioembolic and unknown pathogenesis). There was no difference between Lp(a) concentration in cases and controls [median (quartiles) 0.10 (0.04, 0.39) versus 0.12 (0.04, 0.30) g/L, P = 0.34]. There was no difference in the proportion of cases compared with controls with a markedly elevated Lp(a) of > 0.4 g/L (21.3 versus 16.5%, P = 0.34). There was non-significant trend towards higher median Lp(a) concentrations in women [median (quartiles) 0.16 (0.04, 0.32) g/L versus 0.12 (0.04, 0.28) g/L, P = 0.3]. In view of this trend we analysed the differences between cases and controls for each sex separately. Lp(a) concentrations in men were median (quartiles) 0.08 (0.04, 0.26) g/L in the 101 cases and 0.12 (0.04, 0.28) g/L in the 43 controls (P = 0.6). Lp(a) concentrations in women were median (quartiles) 0.25 (0.04, 0.44) g/L in the 63 cases, and 0.16 (0.04, 0.32) g/L in the 48 controls (P = 0.16). Within the patient group there was no difference between Lp(a) concentrations in the different stroke subgroups. There was no relationship between Lp(a) concentrations and mean percentage carotid stenosis (rs = 0.14, P = 0.07). Our results suggest that in an unselected population of men studied more than 3 weeks post event there is no relationship between lipoprotein(a) concentrations and either stroke/transient ischaemic attack, or carotid atheroma. The relationship in women requires further study.