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Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications. Heliyon 2024; 10:e24427. [PMID: 38293340 PMCID: PMC10826743 DOI: 10.1016/j.heliyon.2024.e24427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/18/2023] [Accepted: 01/09/2024] [Indexed: 02/01/2024] Open
Abstract
The discovery of graphene ignites a great deal of interest in the research and advancement of two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical and optoelectronic properties. Tungsten disulfide (WS2) is a TMDC with intriguing properties, such as biocompatibility, tunable bandgap, and outstanding photoelectric characteristics. These features make it a potential candidate for chemical sensing, biosensing, and tumor therapy. Despite the numerous reviews on the synthesis and application of TMDCs in the biomedical field, no comprehensive study still summarizes and unifies the research trends of WS2 from synthesis to biomedical applications. Therefore, this review aims to present a complete and thorough analysis of the current research trends in WS2 across several biomedical domains, including biosensing and nanomedicine, covering antibacterial applications, tissue engineering, drug delivery, and anticancer treatments. Finally, this review also discusses the potential opportunities and obstacles associated with WS2 to deliver a new outlook for advancing its progress in biomedical research.
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Multiscale Model of CVD Growth of Graphene on Cu(111) Surface. Int J Mol Sci 2023; 24:ijms24108563. [PMID: 37239915 DOI: 10.3390/ijms24108563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 05/04/2023] [Accepted: 05/05/2023] [Indexed: 05/28/2023] Open
Abstract
Due to its outstanding properties, graphene has emerged as one of the most promising 2D materials in a large variety of research fields. Among the available fabrication protocols, chemical vapor deposition (CVD) enables the production of high quality single-layered large area graphene. To better understand the kinetics of CVD graphene growth, multiscale modeling approaches are sought after. Although a variety of models have been developed to study the growth mechanism, prior studies are either limited to very small systems, are forced to simplify the model to eliminate the fast process, or they simplify reactions. While it is possible to rationalize these approximations, it is important to note that they have non-trivial consequences on the overall growth of graphene. Therefore, a comprehensive understanding of the kinetics of graphene growth in CVD remains a challenge. Here, we introduce a kinetic Monte Carlo protocol that permits, for the first time, the representation of relevant reactions on the atomic scale, without additional approximations, while still reaching very long time and length scales of the simulation of graphene growth. The quantum-mechanics-based multiscale model, which links kinetic Monte Carlo growth processes with the rates of occurring chemical reactions, calculated from first principles makes it possible to investigate the contributions of the most important species in graphene growth. It permits the proper investigation of the role of carbon and its dimer in the growth process, thus indicating the carbon dimer to be the dominant species. The consideration of hydrogenation and dehydrogenation reactions enables us to correlate the quality of the material grown within the CVD control parameters and to demonstrate an important role of these reactions in the quality of the grown graphene in terms of its surface roughness, hydrogenation sites, and vacancy defects. The model developed is capable of providing additional insights to control the graphene growth mechanism on Cu(111), which may guide further experimental and theoretical developments.
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Photodetection Properties of MoS 2, WS 2 and Mo xW 1-xS 2 Heterostructure: A Comparative Study. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:24. [PMID: 36615933 PMCID: PMC9824100 DOI: 10.3390/nano13010024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Revised: 12/04/2022] [Accepted: 12/16/2022] [Indexed: 06/17/2023]
Abstract
Layered transition metals dichalcogenides such as MoS2 and WS2 have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS2, WS2 and MoxW1-xS2 heterostructures incorporated into photoconductive devices to be examined and compared in view of their use as potential photodetectors. Vertically aligned MoS2 nanosheets and horizontally stacked WS2 layers, and their heterostructure form MoxW1-xS2, exhibit direct and indirect bandgap, respectively. To analyze these structures, various characterization methods were used to elucidate their properties including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry and high-resolution transmission electron microscopy. While all the investigated samples show a photoresponse in a broad wavelength range between 400 nm and 700 nm, the vertical MoS2 nanosheets sample exhibits the highest performances at a low bias voltage of 5 V. Our findings demonstrate a responsivity and a specific detectivity of 47.4 mA W-1 and 1.4 × 1011 Jones, respectively, achieved by MoxW1-xS2. This study offers insights into the use of a facile elaboration technique for tuning the performance of MoxW1-xS2 heterostructure-based photodetectors.
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Morphology-Control Growth of Graphene Islands by Nonlinear Carbon Supply. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206080. [PMID: 36052575 DOI: 10.1002/adma.202206080] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/18/2022] [Indexed: 06/15/2023]
Abstract
Controlling the morphology of graphene and other 2D materials in chemical vapor deposition (CVD) growth is crucial because the morphology reflects the crystal quality of as-synthesized nanomaterials in a certain way, and consequently it indirectly represents the physical properties of 2D materials such as bandgap, selective ion transportation, and impermeability. However, precise control of the morphology is limited by the complex formation mechanism and sensitive growth-environment factors of graphene. Therefore, the CVD synthesis of single-crystal hexagonal-shaped graphene islands with specific sizes is challenging. Herein, an unconventional nonlinear-carbon-supply growth strategy is proposed to realize controllable CVD growth of desired hexagonal graphene islands with specific sizes on Cu substrates. Large-area graphene films of isolated islands with desired densities, sizes, and distances between the islands are successfully synthesized. Subsequently, the direct growth of a planar-tunnel-junction structure based on two parallel gapped graphene islands is achieved by specific adjustment of the growth and etching processes of graphene CVD synthesis. It is therefore demonstrated that the nonlinear-carbon-supply growth strategy is a reliable method for the synthesis of high-quality graphene and can facilitate the direct growth of graphene-based nanodevices in the future.
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Engineering of Oxidized Line Defects on CVD-Grown MoS 2 Flakes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47288-47299. [PMID: 36205718 DOI: 10.1021/acsami.2c14200] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Defect engineering is a promising means to create patterns on two-dimensional (2D) materials to enable unconventional properties. However, defects usually exist abundantly and randomly on 2D materials, which makes it difficult to tune the properties in a controllable manner. Therefore, it is highly desirable to find out the formation mechanism and controllable fabrication method of defects on 2D materials. In this report, we systematically investigated the line defects on monolayer MoS2 formed by introducing oxygen during the CVD growth. The line defects were formed due to the overoxidation of the MoS2 flake along crystal boundaries, which bulged out of the surface and had the same surface potential as the basal plane. Therefore, the MoS2 flake with line defects maintained the optical and electrical integrity but exhibited distinct properties as compared to the pristine one. By controlling the oxygen concentration during CVD growth, the density of the line defects can be precisely controlled to implement controllable property tuning. Moreover, during the transfer process, the MoS2 flake was easily broken along the line defects, which increased the active sites to achieve enhanced hydrogen evolution reaction performance. This work is expected to inspire the development of patterned functional 2D materials by defect engineering.
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Statistical Verification of Anomaly in Chiral Angle Distribution of Air-Suspended Carbon Nanotubes. NANO LETTERS 2022; 22:5818-5824. [PMID: 35802861 PMCID: PMC9335874 DOI: 10.1021/acs.nanolett.2c01473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Single-walled carbon nanotubes (SWCNT) have long attracted attention due to their distinct physical properties, depending on their chiral structures (chiralities). Clarifying their growth mechanism is important toward perfect chirality-controlled bulk synthesis. Although a correlation between the chirality distribution and the carbon atom configuration at an open tube edge has been predicted theoretically, lack of sufficient statistical data on metallic and semiconducting SWCNTs prohibited its verification. Here, we report statistical verification of the chirality distribution of 413 as-grown individual air-suspended SWCNTs with a length of over 20 μm using broadband Rayleigh spectroscopy. After excluding the impact of the difference in the number of possible SWCNT structures per chiral angle interval, the abundance profile with chiral angle exhibits an increasing trend with a distinct anomaly at a chiral angle of approximately 20°. These results are well explained considering the growth rate depending on armchair-shaped site configurations at the catalyst-nanotube interface.
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Chemical Vapor Deposition of Spherical Amorphous Selenium Mie Resonators for Infrared Meta-Optics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:4612-4619. [PMID: 35021011 DOI: 10.1021/acsami.1c17812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se) spheres by desorption of selenium from Bi2Se3 and re-adsorption on the substrate. We utilize this process to grow scalable, large area Se spheres on several substrates and characterize their Mie-resonant response in the mid-infrared (MIR) spectral range. We demonstrate size-tunable Mie resonances spanning the 2-16 μm spectral range for single isolated resonators and large area ensembles. We further demonstrate strong absorption dips of up to 90% in ensembles of particles in a broad MIR range. Finally, we show that ultra-high-Q resonances arise in the case where Se Mie-resonators are coupled to low-loss epsilon-near-zero (ENZ) substrates. These findings demonstrate the enabling potential of amorphous Selenium as a versatile and tunable nanophotonic material that may open up avenues for on-chip MIR spectroscopy, chemical sensing, spectral imaging, and large area metasurface fabrication.
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Air-Stable 2D Cr 5 Te 8 Nanosheets with Thickness-Tunable Ferromagnetism. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107512. [PMID: 34655444 DOI: 10.1002/adma.202107512] [Citation(s) in RCA: 37] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Indexed: 06/13/2023]
Abstract
2D magnetic materials have aroused widespread research interest owing to their promising application in spintronic devices. However, exploring new kinds of 2D magnetic materials with better stability and realizing their batch synthesis remain challenging. Herein, the synthesis of air-stable 2D Cr5 Te8 ultrathin crystals with tunable thickness via tube-in-tube chemical vapor deposition (CVD) growth technology is reported. The importance of tube-in-tube CVD growth, which can significantly suppress the equilibrium shift to the decomposition direction and facilitate that to the synthesis reaction direction, for the synthesis of high-quality Cr5 Te8 with accurate composition, is highlighted. By precisely adjusting the growth temperature, the thickness of Cr5 Te8 nanosheets is tuned from ≈1.2 nm to tens of nanometers, with the morphology changing from triangles to hexagons. Furthermore, magneto-optical Kerr effect measurements reveal that the Cr5 Te8 nanosheet is ferromagnetic with strong out-of-plane spin polarization. The Curie temperature exhibits a monotonic increase from 100 to 160 K as the Cr5 Te8 thickness increases from 10 to 30 nm and no apparent variation in surface roughness or magnetic properties after months of exposure to air. This study provides a robust method for the controllable synthesis of high-quality 2D ferromagnetic materials, which will facilitate research progress in spintronics.
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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7. MATERIALS 2021; 14:ma14247637. [PMID: 34947234 PMCID: PMC8705099 DOI: 10.3390/ma14247637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/30/2021] [Revised: 11/30/2021] [Accepted: 12/08/2021] [Indexed: 11/16/2022]
Abstract
Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.
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Spontaneous n-Doping in Growing Monolayer MoS 2 by Alkali Metal Compound-Promoted CVD. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58144-58151. [PMID: 34809427 DOI: 10.1021/acsami.1c17409] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Monolayer MoS2 has emerged as one of the most promising candidate materials for future semiconductor devices because of its fascinating physical properties and optoelectronic performance. Recently, the utilization of alkali metal compounds as promoters in CVD growth has been demonstrated to be a facile strategy for growing monolayer MoS2 and other 2D TMDs with large domain sizes. In this work, we systematically investigated the residues derived from alkali metal compounds and the spontaneous n-doping effect on monolayer MoS2 in alkali metal compound-promoted CVD growth. When using NaOH and other alkali metal compounds as promoters, it is found that the Raman peak of the A1g mode red shifted with a broadening width and the PL intensity of the A peak decreased with a red shift, which was attributed to the spontaneous n-doping effect during growth. Moreover, the growth using varying amounts of NaOH promoter suggests that the n-doping level could be controlled by the amount of promoter. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectroscopy (TOF-SIMS) showed the existence of cation-derived residues in the form of a Na-O cluster physiosorbed on top of monolayer MoS2, which was also confirmed by the transfer experiment. The NaOH treatment experiment and density functional theory (DFT) calculations demonstrate that sodium hydroxide clusters, which could be converted from a combination of Na-O clusters and water vapor, could produce an n-doping effect on monolayer MoS2. This study provides a facile route to controllably grow monolayer 2D materials with a desired doping level without further treatment.
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Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41866-41874. [PMID: 34427445 DOI: 10.1021/acsami.1c06812] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 °C in 50 min, within the 450-to-600 °C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ∼140 μA/μm at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS2 grown below 600 °C using solid-source precursors. The effective mobility from transfer length method test structures is 29 ± 5 cm2 V-1 s-1 at 6.1 × 1012 cm-2 electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing.
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Structural Evolution of Boron Clusters on Ag(111) Surfaces - From Atomic Chains to Triangular Sheets with Hexagonal Holes. Chemphyschem 2021; 22:894-903. [PMID: 33538388 DOI: 10.1002/cphc.202001019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2020] [Revised: 01/27/2021] [Indexed: 11/07/2022]
Abstract
Unlike graphene and other 2D materials, borophene is 2D polymorphic with diverse hexagonal holes (HHs)-triangles ratios and the concentrations of HHs are highly substrate dependent. Here, we systematically explored the evolution of boron cluster on Ag(111) surface, BN @Ag(111) (N=1∼36), to understand the nucleation of 2D boron sheet on metal surface. Our calculation showed that, with the size increasing, the structures of most stable BN clusters undergo an evolution from compact triangular lattice, such as double-chains or triple-chains, to the ones with mixed triangular-hexagonal lattices. The first single-HH appears at N=12 and the first double-HH appears at N=27. The stability of large BN clusters with mixed structures is derived from the charge transfer between triangular lattice and the HHs, as well as between the substrates and the BN clusters. Our results provide a deep understanding on the formation of small boron clusters in the initial nucleation stage of borophene growth.
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Enhanced Electrical Performance of Monolayer MoS 2 with Rare Earth Element Sm Doping. NANOMATERIALS 2021; 11:nano11030769. [PMID: 33803612 PMCID: PMC8002856 DOI: 10.3390/nano11030769] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2021] [Revised: 03/09/2021] [Accepted: 03/16/2021] [Indexed: 11/17/2022]
Abstract
Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS2 film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS2 was achieved. The threshold voltage of an Sm-doped MoS2-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS2. Additionally, the electrical performance of the monolayer MoS2-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS2, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.
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Abstract
The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.
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Intercalation-Induced Disintegrated Layer-By-Layer Growth of Ultrathin Ternary Mo(Te 1-xS x) 2 Plates. ACS APPLIED MATERIALS & INTERFACES 2020; 12:30980-30989. [PMID: 32515585 DOI: 10.1021/acsami.0c07342] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Nanometer-thick transition-metal dichalcogenides (TMDs) have attracted increasing research interest because of their exotic physical properties, but their high-yield and large-scale synthesis remains a challenge for their practical device applications. In this study, we realize the high-yield synthesis of nanometer-thick single-crystalline Mo(Te1-xSx)2 plates by a facile chemical vapor deposition method. Adding S powders in the precursors can result in the products varying from well-faceted MoTe2 hexagonal plates to irregular Mo(Te1-xSx)2 plates with randomly stacked nanometer-thick layer steps. Moreover, their lateral dimension increases from several μm for binary MoTe2 to several tens of μm for ternary Mo(Te1-xSx)2. More interestingly, such irregular Mo(Te1-xSx)2 plates can form few layers by ultrasonic exfoliation. Our detailed electron microscopy analyses show that three kinds of S forms influence the ternary growth. In particular, elemental S8 intercalations play an important role in the growth and exfoliation of ultrathin Mo(Te1-xSx)2 plates. This study enriches the fundamental understanding of zero-valent intercalation in TMDs and provides a new insight into secure high-yield nanometer-thick TMDs, which is critical for practical applications.
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Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth. NANO LETTERS 2020; 20:1614-1619. [PMID: 32031821 DOI: 10.1021/acs.nanolett.9b04495] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV-) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV- centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.
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Fractal-Theory-Based Control of the Shape and Quality of CVD-Grown 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902431. [PMID: 31265203 DOI: 10.1002/adma.201902431] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2019] [Revised: 05/27/2019] [Indexed: 06/09/2023]
Abstract
The precise control of the shape and quality of 2D materials during chemical vapor deposition (CVD) processes remains a challenging task, due to a lack of understanding of their underlying growth mechanisms. The existence of a fractal-growth-based mechanism in the CVD synthesis of several 2D materials is revealed, to which a modified traditional fractal theory is applied in order to build a 2D diffusion-limited aggregation (2D-DLA) model based on an atomic-scale growth mechanism. The strength of this model is validated by the perfect correlation between theoretically simulated data, predicted by 2D-DLA, and experimental results obtained from the CVD synthesis of graphene, hexagonal boron nitride, and transition metal dichalcogenides. By applying the 2D-DLA model, it is also discovered that the single-domain net growth rate (SD-NGR) plays a crucial factor in governing the shape and quality of 2D-material crystals. By carefully tuning SD-NGR, various fractal-morphology high-quality single-crystal 2D materials are synthesized, achieving, for the first time, the precise control of 2D-material CVD growth. This work lays the theoretical foundation for the precise adjustment of the morphologies and physical properties of 2D materials, which is essential to the use of fractal-shaped nanomaterials for the fabrication of new-generation neural-network nanodevices.
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Chemical Vapor Deposition Growth of High Crystallinity Sb 2 Se 3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1805307. [PMID: 30706663 DOI: 10.1002/smll.201805307] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2018] [Revised: 01/08/2019] [Indexed: 06/09/2023]
Abstract
Low-dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2 Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2 Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle-resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2 Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2 Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400-900 nm). Owing to the high crystallinity of Sb2 Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W-1 , and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2 Se3 NW, the device exhibits polarization-dependent photoresponse. The high crystallinity and superior anisotropy of Sb2 Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.
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High-Performance Wafer-Scale MoS 2 Transistors toward Practical Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1803465. [PMID: 30328296 DOI: 10.1002/smll.201803465] [Citation(s) in RCA: 42] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Revised: 09/24/2018] [Indexed: 05/13/2023]
Abstract
Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS2 islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS2 islands. Based on such continuous MoS2 films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V T ) and field effect mobility (μFE ) for hundreds of MoS2 FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μFE of 70 cm2 V-1 s-1 and subthreshold swing of about 150 mV dec-1 are extracted from these MoS2 FETs, which are comparable to the best top-gated MoS2 FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits.
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Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS 2. ACS NANO 2017; 11:12772-12779. [PMID: 29144734 DOI: 10.1021/acsnano.7b07568] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Physically unclonable cryptographic primitives are promising for securing the rapidly growing number of electronic devices. Here, we introduce physically unclonable primitives from layered molybdenum disulfide (MoS2) by leveraging the natural randomness of their island growth during chemical vapor deposition (CVD). We synthesize a MoS2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, hence indicating the growth of multilayer speckles is a spatial Poisson process. Such a property is highly desirable for constructing unpredictable cryptographic primitives. The security primitive is an array of 2048 pixels fabricated from this film. The complex structure of the pixels makes the physical duplication of the array impossible (i.e., physically unclonable). A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS2 layers, which by design is random throughout the film. Using a threshold value for the photoemission, we convert the optical response into binary cryptographic keys. We show that the proper selection of this threshold is crucial for maximizing combination randomness and that the optimal value of the threshold is linked directly to the growth process. This study reveals an opportunity for generating robust and versatile security primitives from layered transition metal dichalcogenides.
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Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy. Microscopy (Oxf) 2017; 66:103-109. [PMID: 27940609 DOI: 10.1093/jmicro/dfw107] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2016] [Accepted: 11/20/2016] [Indexed: 11/13/2022] Open
Abstract
Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [112¯0] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.
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Study of Grains and Boundaries of Molybdenum Diselenide and Tungsten Diselenide Using Liquid Crystal. NANO LETTERS 2017; 17:1474-1481. [PMID: 28207266 DOI: 10.1021/acs.nanolett.6b04491] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Direct observation of grains and boundaries is a vital factor in altering the electrical and optoelectronic properties of transition metal dichalcogenides (TMDs), that is, MoSe2 and WSe2. Here, we report visualization of grains and boundaries of chemical vapor deposition grown MoSe2 and WSe2 on silicon, using optical birefringence of two-dimensional layer covered with nematic liquid crystal (LC). An in-depth study was performed to determine the alignment orientation of LC molecules and their correlation with other grains. Interestingly, we found that alignment of liquid crystal has discrete preferential orientations. From computational simulations, higher adsorption energy for the armchair direction was found to force LC molecules to align on it, compared to that of the zigzag direction. We believe that these TMDs with three-fold symmetric alignment could be utilized for display applications.
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Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:10304-10310. [PMID: 27726184 DOI: 10.1002/adma.201601067] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2016] [Revised: 06/01/2016] [Indexed: 05/24/2023]
Abstract
Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.
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Co-nucleus 1D/2D Heterostructures with Bi2S3 Nanowire and MoS2 Monolayer: One-Step Growth and Defect-Induced Formation Mechanism. ACS NANO 2016; 10:8938-8946. [PMID: 27571025 DOI: 10.1021/acsnano.6b04952] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Heterostructures constructed by low-dimensional (such as 0D, 1D, and 2D) materials have opened up opportunities for exploring interesting physical properties and versatile (opto)electronics. Recently, 2D/2D heterostructures, in particular, atomically thin graphene and transition-metal dichalcogenides, including graphene/MoS2, WSe2/MoS2, and WS2/WSe2, were efficiently prepared (by transfer techniques, chemical vapor deposition (CVD) growth, etc.) and systematically studied. In contrast, investigation of 1D/2D heterostructures was still very challenging and rarely reported, and the understanding of such heterostructures was also not well established. Herein, we demonstrate the one-step growth of a heterostructure on the basis of a 1D-Bi2S3 nanowire and a 2D-MoS2 monolayer through the CVD method. Multimeans were employed, and the results proved the separated growth of a Bi2S3 nanowire and a MoS2 sheet in the heterostructure rather than forming a BixMo1-xSy alloy due to their large lattice mismatch. Defect-induced co-nucleus growth, which was an important growth mode in 1D/2D heterostructures, was also experimentally confirmed and systematically investigated in our research. Such 1D/2D heterostructures were further fabricated and utilized in (opto)electronic devices, such as field-effect transistors and photodetectors, and revealed their potential for multifunctional design in electrical properties. The direct growth of such nanostructures will help us to gain a better comprehension of these specific configurations and allow device functionalities in potential applications.
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Three-Dimensional Heterostructures of MoS2 Nanosheets on Conducting MoO2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction. ACS APPLIED MATERIALS & INTERFACES 2015; 7:23328-23335. [PMID: 26436769 DOI: 10.1021/acsami.5b07960] [Citation(s) in RCA: 57] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Molybdenum disulfide (MoS2) is a promising catalyst for hydrogen evolution reaction (HER) because of its unique nature to supply active sites in the reaction. However, the low density of active sites and their poor electrical conductivity have limited the performance of MoS2 in HER. In this work, we synthesized MoS2 nanosheets on three-dimensional (3D) conductive MoO2 via a two-step chemical vapor deposition (CVD) reaction. The 3D MoO2 structure can create structural disorders in MoS2 nanosheets (referred to as 3D MoS2/MoO2), which are responsible for providing the superior HER activity by exposing tremendous active sites of terminal disulfur of S2(-2) (in MoS2) as well as the backbone conductive oxide layer (of MoO2) to facilitate an interfacial charge transport for the proton reduction. In addition, the MoS2 nanosheets could protect the inner MoO2 core from the acidic electrolyte in the HER. The high activity of the as-synthesized 3D MoS2/MoO2 hybrid material in HER is attributed to the small onset overpotential of 142 mV, a largest cathodic current density of 85 mA cm(-2), a low Tafel slope of 35.6 mV dec(-1), and robust electrochemical durability.
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Abstract
Atomic-layer transition metal dichalcogenides (TMDCs) have attracted appreciable interest due to their tunable band gap, spin-valley physics, and potential device applications. However, the quality of TMDC samples available still poses serious problems, such as inhomogeneous lattice strain, charge doping, and structural defects. Here, we report on the growth of high-quality, monolayer WS2 onto exfoliated graphite by high-temperature chemical vapor deposition (CVD). Monolayer-grown WS2 single crystals present a uniform, single excitonic photoluminescence peak with a Lorentzian profile and a very small full-width at half-maximum of 21 meV at room temperature and 8 meV at 79 K. Furthermore, in these samples, no additional peaks are observed for charged and/or bound excitons, even at low temperature. These optical responses are completely different from the results of previously reported TMDCs obtained by mechanical exfoliation and CVD. Our findings indicate that the combination of high-temperature CVD with a cleaved graphite surface is an ideal condition for the growth of high-quality TMDCs, and such samples will be essential for revealing intrinsic physical properties and for future applications.
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Abstract
A systematic study has been conducted to investigate the role of hydrogen in the etching reaction of graphene films grown on copper foils. The results at 825 °C and 500 mTorr showed no evidence of graphene etching by purified ultrahigh purity (UHP)-grade hydrogen, whereas graphene films exposed to unpurified UHP-grade hydrogen were considerably etched due to the presence of oxygen or other oxidizing impurities. This finding reveals not only the major impact of oxidizing impurities in the graphene etching reaction, but also entails understanding and controlling the graphene chemical vapor deposition mechanism on copper substrates.
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