High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics

Silicon nitride (Si3N4) is an ideal candidate for the development of low-loss photonic integrated circuits. However, efficient light coupling between standard optical fibers and Si3N4 chips remains a significant challenge. For vertical grating couplers, the lower index contrast yields a weak grating strength, which translates to long diffractive structures, limiting the coupling performance. In response to the rise of hybrid photonic platforms, the adoption of multi-layer grating arrangements has emerged as a promising strategy to enhance the performance of Si3N4 couplers. In this work, we present the design of high-efficiency surface grating couplers for the Si3N4 platform with an amorphous silicon (α-Si) overlay. The surface grating, fully formed in an α-Si waveguide layer, utilizes subwavelength grating (SWG)-engineered metamaterials, enabling simple realization through single-step patterning. This not only provides an extra degree of freedom for controlling the fiber-chip coupling but also facilitates portability to existing foundry fabrication processes. Using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations, a metamaterial-engineered grating coupler is designed with a coupling efficiency of -1.7 dB at an operating wavelength of 1.31 µm, with a 1 dB bandwidth of 31 nm. Our proposed design presents a novel approach to developing high-efficiency fiber-chip interfaces for the silicon nitride integration platform for a wide range of applications, including datacom and quantum photonics.

High Passivation Performance of Cat-CVD i-a-Si:H Derived from Bayesian Optimization with Practical Constraints

High-quality passivation with intrinsic hydrogenated amorphous Si (i-a-Si:H) is essential for achieving high-efficiency Si heterojunction (SHJ) solar cells. The formation of i-a-Si:H with a high passivation quality requires strict control of the hydrogen content and film density. In this study, we report the effective discovery of i-a-Si:H deposition conditions through catalytic chemical vapor deposition using Bayesian optimization (BO) to maximize the passivation performance. Another contribution of this study to materials science is the establishment of a practical BO scheme consisting of several prediction models in order to account for the practical constraints. By applying the BO scheme, effective minority carrier lifetime (τeff) is maximized within the deposition condition range, while being constrained by the i-a-Si:H thickness and the capabilities of the experimental setup. We achieved a high passivation performance of τeff > 2.6 ms with only 8 cycles in BO, starting with 14 initial samples. Within the investigated range, the deposition conditions were further explored over 20 cycles. The BO provided not only optimal deposition conditions but also scientific knowledge. Contour plots of the predicted τeff values obtained through the BO process demonstrated that there is a band-like high τeff condition in the parameter space between the substrate temperature and SiH4 flow rate. The high void fraction and epitaxial growth were inhibited by controlling the substrate temperature and SiH4 flow rate, resulting in a high passivation quality. This indicates that the combination of the SiH4 flow rate and substrate temperature parameters is crucial to passivation quality. These results can be applied to determine the deposition conditions for a good a-Si:H layer without a high void fraction or epitaxial growth. The research methods shown in this study, practical BO scheme, and further analysis based on the optimized results will be also useful to optimize and analyze the process conditions of semiconductor processes including plasma-enhanced chemical vapor deposition for SHJ solar cells.

Fine-Tuning Intrinsic and Doped Hydrogenated Amorphous Silicon Thin-Film Anodes Deposited by PECVD to Enhance Capacity and Stability in Lithium-Ion Batteries

Silicon is a promising alternative to graphite as an anode material in lithium-ion batteries, thanks to its high theoretical lithium storage capacity. Despite these high expectations, silicon anodes still face significant challenges, such as premature battery failure caused by huge volume changes during charge-discharge processes. To solve this drawback, using amorphous silicon as a thin film offers several advantages: its amorphous nature allows for better stress mitigation and it can be directly grown on current collectors for material savings and improved Li-ion diffusion. Furthermore, its conductivity is easily increased through doping during its growth. In this work, we focused on a comprehensive study of the influence of both electrical and structural properties of intrinsic and doped hydrogenated amorphous silicon (aSi:H) thin-film anodes on the specific capacity and stability of lithium-ion batteries. This study allows us to establish that hydrogen distribution in the aSi:H material plays a pivotal role in enhancing battery capacity and longevity, possibly masking the significance of the conductivity in the case of doped electrodes. Our findings show that we were able to achieve high initial specific capacities (3070 mAhg-1 at the 10th cycle), which can be retained at values higher than those of graphite for a significant number of cycles (>120 cycles), depending on the structural properties of the aSi:H films. To our knowledge, this is the first comprehensive study of the influence of these properties of thin films with different doping levels and hydrogen distributions on their optimization and use as anodes in lithium-ion batteries.

Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness

The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)n multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy Ea of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami-Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process.

Insights into the Si─H Bonding Configuration at the Amorphous/Crystalline Silicon Interface of Silicon Heterojunction Solar Cells by Raman and FTIR Spectroscopy

In silicon heterojunction solar cell technology, thin layers of hydrogenated amorphous silicon (a-Si:H) are applied as passivating contacts to the crystalline silicon (c-Si) wafer. Thus, the properties of the a-Si:H is crucial for the performance of the solar cells. One important property of a-Si:H is its microstructure which can be characterized by the microstructure parameter R based on Si─H bond stretching vibrations. A common method to determine R is Fourier transform infrared (FTIR) absorption measurement which, however, is difficult to perform on solar cells for various reasons like the use of textured Si wafers and the presence of conducting oxide contact layers. Here, it is demonstrated that Raman spectroscopy is suitable to determine the microstructure of bulk a-Si:H layers of 10 nm or less on textured c-Si underneath indium tin oxide as conducting oxide. A detailed comparison of FTIR and Raman spectra is performed and significant differences in the microstructure parameter are obtained by both methods with decreasing a-Si:H film thickness.

Challenges of Electron Correlation Microscopy on Amorphous Silicon and Amorphous Germanium

Electron correlation microscopy experiments were conducted on amorphous germanium (a-Ge) and amorphous silicon (a-Si) with the goal to study self-diffusion. For this purpose, a series of tilted dark-field images were acquired during in situ heating of the samples in a transmission electron microscope. These experiments show that the measurements are greatly affected by artefacts. Contamination, crystallization, electron beam-induced sputtering, and macroscopic bending of the samples pose major obstacles to the measurements. Other, more subtle experimental artefacts could occur in addition to these which makes interpretations regarding the structural dynamics nearly impossible. The data were nonetheless evaluated to see if some useful information could be extracted. One such result is that the distribution of the characteristic times τKWW, which were obtained from stretched exponential fits to the intensity autocorrelation data, is spatially heterogeneous. This spatial heterogeneity is assumed to be caused by a potential nonergodicity of the materials, the artefacts or an inhomogeneous amorphous structure. Further data processing shows that the characteristic times τKWW are moreover temperature independent, especially for the a-Ge data. It is concluded that the structural rearrangements over time are primarily electron beam-driven and that diffusive dynamics are too slow to be measured at the chosen, experimentally accessible annealing temperatures.

Fluctuation Electron Microscopy on Amorphous Silicon and Amorphous Germanium

Variable resolution fluctuation electron microscopy experiments were performed on self-ion implanted amorphous silicon and amorphous germanium to analyze the medium-range order. The results highlight that the commonly used pair-persistence analysis is influenced by the experimental conditions. Precisely, the structural correlation length Λ, a metric for the medium-range order length scale in the material, obtained from this particular evaluation varies depending on whether energy filtering is used to acquire the data. In addition, Λ depends on the sample thickness. Both observations can be explained by the fact that the pair-persistence analysis utilizes the experimentally susceptible absolute value of the normalized variance obtained from fluctuation electron microscopy data. Instead, plotting the normalized variance peak magnitude over the electron beam size offers more robust results. This evaluation yields medium-range order with an extent of approximately (1.50 ± 0.50) nm for the analyzed amorphous germanium and around (1.10 ± 0.20) nm for amorphous silicon.

Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization

We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.

Hydrogenated Amorphous Silicon-Based Nanomaterials as Alternative Electrodes to Graphite for Lithium-Ion Batteries

Graphite is the material most used as an electrode in commercial lithium-ion batteries. On the other hand, it is a material with low energy capacity, and it is considered a raw critical material given its large volume of use. In the current energy context, we must promote the search for alternative materials based on elements that are abundant, sustainable and that have better performance for energy storage. We propose thin materials based on silicon, which has a storage capacity eleven times higher than graphite. Nevertheless, due to the high-volume expansion during lithiation, it tends to crack, limiting the life of the batteries. To solve this problem, hydrogenated amorphous silicon has been researched, in the form of thin film and nanostructures, since, due to its amorphous structure, porosity and high specific surface, it could better absorb changes in volume. These thin films were grown by plasma-enhanced chemical vapor deposition, and then the nanowires were obtained by chemical etching. The compositional variations of films deposited at different temperatures and the incorporation of dopants markedly influence the stability and longevity of batteries. With these optimized electrodes, we achieved batteries with an initial capacity of 3800 mAhg^-1 and 82% capacity retention after 50 cycles.

Femtosecond Laser Fabrication of Anisotropic Structures in Phosphorus- and Boron-Doped Amorphous Silicon Films

Femtosecond laser-modified amorphous silicon (a-Si) films with optical and electrical anisotropy have perspective polarization-sensitive applications in optics, photovoltaics, and sensors. We demonstrate the formation of one-dimensional femtosecond laser-induced periodic surface structures (LIPSS) on the surface of phosphorus- (n-a-Si) and boron-doped (p-a-Si) amorphous silicon films. The LIPSS are orthogonal to the laser polarization, and their period decreases from 1.1 ± 0.1 µm to 0.84 ± 0.07 µm for p-a-Si and from 1.06 ± 0.03 to 0.98 ± 0.01 for n-a-Si when the number of laser pulses per unit area increases from 30 to 120. Raman spectra analysis indicates nonuniform nanocrystallization of the irradiated films, with the nanocrystalline Si phase volume fraction decreasing with depth from ~80 to ~40% for p-a-Si and from ~20 to ~10% for n-a-Si. LIPSS' depolarizing effect, excessive ablation of the film between LIPSS ridges, as well as anisotropic crystalline phase distribution within the film lead to the emergence of conductivity anisotropy of up to 1 order for irradiated films. Current-voltage characteristic nonlinearity observed for modified p-a-Si samples may be associated with the presence of both the crystalline and amorphous phases, resulting in the formation of potential barriers for the in-plane carrier transport and Schottky barriers at the electric contacts.

Treating Knock-On Displacements in Fluctuation Electron Microscopy Experiments

This work investigates how knock-on displacements influence fluctuation electron microscopy (FEM) experiments. FEM experiments were conducted on amorphous silicon, formed by self-ion implantation, in a transmission electron microscope at 300 kV and 60 kV at various electron doses, two different binnings and with two different cameras, a CCD and a CMOS one. Furthermore, energy filtering has been utilized in one case. Energy filtering greatly enhances the FEM data by removing the inelastic background intensity, leading to an improved speckle contrast. The CMOS camera yields a slightly larger normalized variance than the CCD at an identical electron dose and appears more prone to noise at low electron counts. Beam-induced atomic displacements affect the 300 kV FEM data, leading to a continuous suppression of the normalized variance with increasing electron dose. Such displacements are considerably reduced for 60 kV experiments since the primary electron's maximum energy transfer to an atom is less than the displacement threshold energy of amorphous silicon. The results show that the variance suppression due to knock-on displacements can be controlled in two ways: Either by minimizing the electron dose to the sample or by conducting the experiment at a lower acceleration voltage.

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

Wet chemical etching is essential not only for processing silicon (Si) wafers but also for forming diverse structures, significantly promoting the development of the semiconductor industry. However, tight control of etched topography at the nanoscale and even atom-scale in a controllable and reproducible fashion can be hardly achieved in either laboratory research or industrial production, seriously hindering further enhancement of high-performance Si-based electronic devices. Herein, the roles of mechanically driven defects in wet etching were systematically investigated toward promoting controllable wet etching of monocrystalline Si. The role of antietching of mechanically driven amorphous Si (a-Si) and the role of promoting etching of distorted Si (including dislocations and stacking faults) were revealed in anisotropic or isotropic etchants. It was also found that the nucleation of nanocrystals in the a-Si area with increasing contact pressure can lead to deactivation of the antietching mask, and the required contact pressure for deactivation in KOH and tetramethyl ammonium hydroxide solutions was much higher than that in HF/HNO₃ mixtures. The selective etching mechanisms for every defect including a-Si, distorted Si, and nanocrystals were further addressed down to the atom-scale based on the proposed dissolution model. This study provides insights into deeply understanding the role of defects in wet etching and pushes forward the idea of controllable wet chemical etching in the Si-based semiconductor industry.

Technical assessment of 2D and 3D imaging performance of an IGZO-based flat-panel X-ray detector

BACKGROUND

Indirect detection flat-panel detectors (FPDs) consisting of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are a prevalent technology for digital x-ray imaging. However, their performance is challenged in applications requiring low exposure levels, high spatial resolution, and high frame rate. Emerging FPD designs using metal oxide TFTs may offer potential performance improvements compared to FPDs based on a-Si:H TFTs.

PURPOSE

This work investigates the imaging performance of a new indium gallium zinc oxide (IGZO) TFT-based detector in 2D fluoroscopy and 3D cone-beam CT (CBCT).

METHODS

The new FPD consists of a sensor array combining IGZO TFTs with a-Si:H photodiodes and a 0.7-mm thick CsI:Tl scintillator. The FPD was implemented on an x-ray imaging bench with system geometry emulating intraoperative CBCT. A conventional FPD with a-Si:H TFTs and a 0.6-mm thick CsI:Tl scintillator was similarly implemented as a basis of comparison. 2D imaging performance was characterized in terms of electronic noise, sensitivity, linearity, lag, spatial resolution (modulation transfer function, MTF), image noise (noise-power spectrum, NPS), and detective quantum efficiency (DQE) with entrance air kerma (EAK) ranging from 0.3 to 1.2 μGy. 3D imaging performance was evaluated in terms of the 3D MTF and noise-equivalent quanta (NEQ), soft-tissue contrast-to-noise ratio (CNR), and image quality evident in anthropomorphic phantoms for a range of anatomical sites and dose, with weighted air kerma, K w ${K_w}$ , ranging from 0.8 to 4.9 mGy.

RESULTS

The 2D imaging performance of the IGZO-based FPD exhibited up to ∼1.7× lower electronic noise than the a-Si:H FPD at matched pixel pitch. Furthermore, the IGZO FPD exhibited ∼27% increase in mid-frequency DQE (1 mm^-1 ) at matched pixel size and dose (EAK ≈ 1.0 μGy) and ∼11% increase after adjusting for differences in scintillator thickness. 2D spatial resolution was limited by the scintillator for each FPD. The IGZO-based FPD demonstrated improved 3D NEQ at all spatial frequencies in both head (≥25% increase for all dose levels) and body (≥10% increase for K w ${K_w}$ ≤2 mGy) imaging scenarios. These characteristics translated to improved low-contrast visualization in anthropomorphic phantoms, demonstrating ≥10% improvement in CNR and extension of the low-dose range for which the detector is input-quantum limited.

CONCLUSION

The IGZO-based FPD demonstrated improvements in electronic noise, image lag, and NEQ that translated to measurable improvements in 2D and 3D imaging performance compared to a conventional FPD based on a-Si:H TFTs. The improvements are most beneficial for 2D or 3D imaging scenarios involving low-dose and/or high-frame rate.

From Femtoseconds to Gigaseconds: The SolDeg Platform for the Performance Degradation Analysis of Silicon Heterojunction Solar Cells

Heterojunction Si solar cells exhibit notable performance degradation. We modeled this degradation by electronic defects getting generated by thermal activation across energy barriers over time. To analyze the physics of this degradation, we developed the SolDeg platform to simulate the dynamics of electronic defect generation. First, femtosecond molecular dynamics simulations were performed to create a-Si/c-Si stacks, using the machine learning-based Gaussian approximation potential. Second, we created shocked clusters by a cluster blaster method. Third, the shocked clusters were analyzed to identify which of them supported electronic defects. Fourth, the distribution of energy barriers that control the generation of these electronic defects was determined. Fifth, an accelerated Monte Carlo method was developed to simulate the thermally activated time-dependent defect generation across the barriers. Our main conclusions are as follows. (1) The degradation of a-Si/c-Si heterojunction solar cells via defect generation is controlled by a broad distribution of energy barriers. (2) We developed the SolDeg platform to track the microscopic dynamics of defect generation across this wide barrier distribution and determined the time-dependent defect density N(t) from femtoseconds to gigaseconds, over 24 orders of magnitude in time. (3) We have shown that a stretched exponential analytical form can successfully describe the defect generation N(t) over at least 10 orders of magnitude in time. (4) We found that in relative terms, V_oc degrades at a rate of 0.2%/year over the first year, slowing with advancing time. (5) We developed the time correspondence curve to calibrate and validate the accelerated testing of solar cells. We found a compellingly simple scaling relationship between accelerated and normal times t_normal ∝ t_accel^{T(accel)/T(normal)}. (6) We also carried out experimental studies of defect generation in a-Si:H/c-Si stacks. We found a relatively high degradation rate at early times that slowed considerably at longer time scales.

Hole-Storage Enhanced a-Si Photocathodes for Efficient Hydrogen Production

Ferrihydrite (Fh) has been demonstrated as an effective interfacial layer for photoanodes to achieve outstanding photoelectrochemical (PEC) performance for water oxidation reaction owing to its unique hole-storage function. However, it is unknown whether such a hole-storage layer can be used to construct highly efficient photocathodes for hydrogen evolution reaction (HER). In this work, we report Fh interfacial engineering of amorphous silicon photocathode (with nickel as HER cocatalyst) achieving a photocurrent density of 15.6 mA cm^-2 at 0 V vs. the reversible hydrogen electrode and a half-cell energy conversion efficiency of 4.08 % in alkaline solution, outperforming most of reported a-Si based photocathodes including multi-junction configurations integrated with noble metal cocatalysts in acid solution. Besides, the photocurrent density is maintained above 14 mA cm^-2 for 175 min with 100 % Faradaic efficiency for HER in alkaline solution. Our results demonstrate a feasible approach to construct efficient photocathodes via the application of a hole-storage layer.

On-Glass Integrated SU-8 Waveguide and Amorphous Silicon Photosensor for On-Chip Detection of Biomolecules: Feasibility Study on Hemoglobin Sensing

An optoelectronic, integrated system-on-glass for on-chip detection of biomolecules is here presented. The system’s working principle is based on the interaction, detected by a hydrogenated amorphous silicon photosensor, between a monochromatic light travelling in a SU-8 polymer optical waveguide and the biological solution under analysis. Optical simulations of the waveguide coupling to the thin-film photodiode with a specific design were carried out. A prototype was fabricated and characterized showing waveguide optical losses of about 0.6 dB/cm, a photodiode shot noise current of about 2.5 fA/Hz and responsivity of 495 mA/W at 532 nm. An electro-optical coupling test was performed on the fabricated device to validate the system. As proof of concept, hemoglobin was studied as analyte for a demonstration scenario, involving optical simulations interpolated with experimental data. The calculated detection limit of the proposed system for hemoglobin concentration in aqueous solution is around 100 ppm, in line with colorimetric methods currently on the market. These results show the effectiveness of the proposed system in biological detection applications and encourage further developments in implementing these kinds of devices in the biomedical field.

Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon

One-dimensional periodic surface structures were formed by femtosecond laser irradiation of amorphous hydrogenated silicon (a-Si:H) films. The a-Si:H laser processing conditions influence on the periodic relief formation as well as correlation of irradiated surfaces structural properties with their electrophysical properties were investigated. The surface structures with the period of 0.88 and 1.12 μm were fabricated at the laser wavelength of 1.25 μm and laser pulse number of 30 and 750, respectively. The orientation of the surface structure is defined by the laser polarization and depends on the concentration of nonequilibrium carriers excited by the femtosecond laser pulses in the near-surface region of the film, which affects a mode of the excited surface electromagnetic wave which is responsible for the periodic relief formation. Femtosecond laser irradiation increases the a-Si:H films conductivity by 3 to 4 orders of magnitude, up to 1.2 × 10⁻⁵ S∙cm, due to formation of Si nanocrystalline phase with the volume fraction from 17 to 28%. Dark conductivity and photoconductivity anisotropy, observed in the irradiated a-Si:H films is explained by a depolarizing effect inside periodic microscale relief, nonuniform crystalline Si phase distribution, as well as different carrier mobility and lifetime in plane of the studied samples along and perpendicular to the laser-induced periodic surface structures orientation, that was confirmed by the measured photoconductivity and absorption coefficient spectra.

Compliant Nano-Pliers as a Biomedical Tool at the Nanoscale: Design, Simulation and Fabrication

This paper presents the development of a multi-hinge, multi-DoF (Degrees of Freedom) nanogripper actuated by means of rotary comb drives and equipped with CSFH (Conjugate Surface Flexure Hinges), with the goal of performing complex in-plane movements at the nanoscale. The design approach, the simulation and a specifically conceived single-mask fabrication process are described in detail and the achieved results are illustrated by SEM images. The first prototype presents a total overall area of (550 × 550) μm2, an active clamping area of (2 × 4) μm2, 600 nm-wide circular curved beams as flexible hinges for its motion and an aspect ratio of about 2.5. These features allow the proposed system to grasp objects a few hundred nanometers in size.

Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses

Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of α-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

Light Propagation in Flexible Thin-Film Amorphous Silicon Solar Cells with Nanotextured Metal Back Reflectors

Nanostructured metal back reflectors (BRs) are playing an important role in thin-film solar cells, which facilitates an increased optical path length within a relatively thin absorbing layer. In this study, three nanotextured plasmonic metal (copper, gold, and silver) BRs underneath flexible thin-film amorphous silicon solar cells are systematically investigated. The solar cells with BRs demonstrate an excellent light harvesting capability in the long-wavelength region. With the combination of hybrid cavity resonances, horizontal modes, and surface plasmonic resonances, more incident light is coupled into the photoactive layer. Compared to the reference cells, the three devices with plasmonic BRs show lower parasitic absorptions with different individual absorption distributions. Both experimental and simulated results indicate that the silver BR cells delivered the best performance with a promising power conversion efficiency of 7.26%. These rational designs of light harvesting nanostructures provide guidelines for high-performance thin-film solar cells and other optoelectronic devices.

Surface Effects and Optical Properties of Self-Assembled Nanostructured a-Si:Al

We present a study of the surface effects and optical properties of the self-assembled nanostructures comprised of vertically aligned 5 nm-diameter Al nanowires embedded in an amorphous Si matrix (a-Si:Al). The controlled (partial) removal of Al nanowires in a selective etching process yielded nanoporous a-Si media with a variable effective surface area. Different spectroscopy techniques, such as X-ray photoelectron spectroscopy (XPS), UV-Vis spectrophotometry and photoluminescence (PL), have been combined to investigate the impact of such nanostructuring on optical absorption and emission properties. We also examine long-term exposure to air ambient and show that increasing level of surface oxidation determines the oxide defect-related nature of the dominant PL emission from the nanoporous structures. The role of bulk, nanosize and surface effects in optical properties has been separated and quantified, providing a better understanding of the potential of such nanoporous a-Si:Al structures for future device developments.

MEMS-Based Wavelength-Selective Bolometers

We propose and experimentally demonstrate a compact design for membrane-supported wavelength-selective infrared (IR) bolometers. The proposed bolometer device is composed of wavelength-selective absorbers functioning as the efficient spectroscopic IR light-to-heat transducers that make the amorphous silicon (a-Si) bolometers respond at the desired resonance wavelengths. The proposed devices with specific resonances are first numerically simulated to obtain the optimal geometrical parameters and then experimentally realized. The fabricated devices exhibit a wide resonance tunability in the mid-wavelength IR atmospheric window by changing the size of the resonator of the devices. The measured spectral response of the fabricated device wholly follows the pre-designed resonance, which obviously evidences that the concept of the proposed wavelength-selective IR bolometers is realizable. The results obtained in this work provide a new solution for on-chip MEMS-based wavelength-selective a-Si bolometers for practical applications in IR spectroscopic devices.

Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells

We characterize and discuss the impact of hydrogenation on the performance of phosphorus-doped polycrystalline silicon (poly-Si) films for passivating contact solar cells. Combining various characterization techniques including transmission electron microscopy, energy-dispersive X-ray spectroscopy, low-temperature photoluminescence spectroscopy, quasi-steady-state photoconductance, and Fourier-transform infrared spectroscopy, we demonstrate that the hydrogen content inside the doped poly-Si layers can be manipulated to improve the quality of the passivating contact structures. After the hydrogenation process of poly-Si layers fabricated under different conditions, the effective lifetime and the implied open circuit voltage are improved for all investigated samples (up to 4.75 ms and 728 mV on 1 Ω cm n-type Si substrates). Notably, samples with very low initial passivation qualities show a dramatic improvement from 350 μs to 2.7 ms and from 668 to 722 mV.

Mobile C-Arm with a CMOS detector: Technical assessment of fluoroscopy and Cone-Beam CT imaging performance

PURPOSE

Indirect-detection CMOS flat-panel detectors (FPDs) offer fine pixel pitch, fast readout, and low electronic noise in comparison to current a-Si:H FPDs. This work investigates the extent to which these potential advantages affect imaging performance in mobile C-arm fluoroscopy and cone-beam CT (CBCT).

METHODS

FPDs based on CMOS (Xineos 3030HS, 0.151 mm pixel pitch) or a-Si:H (PaxScan 3030X, 0.194 mm pixel pitch) sensors were outfitted on equivalent mobile C-arms for fluoroscopy and CBCT. Technical assessment of 2D and 3D imaging performance included measurement of electronic noise, gain, lag, modulation transfer function (MTF), noise-power spectrum (NPS), detective quantum efficiency (DQE), and noise-equivalent quanta (NEQ) in fluoroscopy (with entrance air kerma ranging 5-800 nGy per frame) and cone-beam CT (with weighted CT dose index, CTDI_w , ranging 0.08-1 mGy). Image quality was evaluated by clinicians in vascular, orthopaedic, and neurological surgery in realistic interventional scenarios with cadaver subjects emulating a variety of 2D and 3D imaging tasks.

RESULTS

The CMOS FPD exhibited ~2-3× lower electronic noise and ~7× lower image lag than the a-Si:H FPD. The 2D (projection) DQE was superior for CMOS at ≤50 nGy per frame, especially at high spatial frequencies (~2% improvement at 0.5 mm^-1 and ≥50% improvement at 2.3 mm^-1 ) and was somewhat inferior at moderate-high doses (up to 18% lower DQE for CMOS at 0.5 mm^-1 ). For smooth CBCT reconstructions (low-frequency imaging tasks), CMOS exhibited ~10%-20% higher NEQ (at 0.1-0.5 mm^-1 ) at the lowest dose levels (CTDI_w ≤0.1 mGy), while the a-Si:H system yielded slightly (~5%) improved NEQ (at 0.1-0.5 lp/mm) at higher dose levels (CTDI_w ≥0.6 mGy). For sharp CBCT reconstructions (high-frequency imaging tasks), NEQ was ~32% higher above 1 mm^-1 for the CMOS system at mid-high-dose levels and ≥75% higher at the lowest dose levels (CTDI_w ≤0.1 mGy). Observer assessment of 2D and 3D cadaver images corroborated the objective metrics with respect to a variety of pertinent interventional imaging tasks.

CONCLUSION

Measurements of image noise, spatial resolution, DQE, and NEQ indicate improved low-dose performance for the CMOS-based system, particularly at lower doses and higher spatial frequencies. Assessment in realistic imaging scenarios confirmed improved visibility of fine details in low-dose fluoroscopy and CBCT. The results quantitate the extent to which CMOS detectors improve mobile C-arm imaging performance, especially in 2D and 3D imaging scenarios involving high-resolution tasks and low-dose conditions.

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μS was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.

Unusually High and Anisotropic Thermal Conductivity in Amorphous Silicon Nanostructures

Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (κ), which is ∼1 W·m^-1 K^-1 for a-Si. However, recent work suggested that κ of micrometer-thick a-Si films can be greater than 3 W·m^-1 K^-1, which is contributed to by propagating vibrational modes, referred to as "propagons". However, precise determination of κ in a-Si has been elusive. Here, we used structures of a-Si nanotubes and suspended a-Si films that enabled precise in-plane thermal conductivity (κ_∥) measurement within a wide thickness range of 5 nm to 1.7 μm. We showed unexpectedly high κ_∥ in a-Si nanostructures, reaching ∼3.0 and 5.3 W·m^-1 K^-1 at ∼100 nm and 1.7 μm, respectively. Furthermore, the measured κ_∥ is significantly higher than the cross-plane κ on the same films. This unusually high and anisotropic thermal conductivity in the amorphous Si nanostructure manifests the surprisingly broad propagon mean free path distribution, which is found to range from 10 nm to 10 μm, in the disordered and atomically isotropic structure. This result provides an unambiguous answer to the century-old problem regarding mean free path distribution of propagons and also sheds light on the design and performance of numerous a-Si based electronic and optoelectronic devices.

A portal dosimetry dose prediction method based on collapsed cone algorithm using the clinical beam model

PURPOSE

Amorphous silicon electronical portal imaging devices (EPIDs) are widely used for dosimetric measurements in Radiation Therapy. The purpose of this work was to determine if a portal dose prediction method can be utilized for dose map calculations based on the linear accelerator model within a commercial treatment planning system (Pinnacle³ v8.0 m).

METHODS

The method was developed for a 6 MV photon beam on the Varian Clinac 21-EX, at a nominal dose rate of 400 MU/min. The Varian aS1000 EPID was unmounted from the linear accelerator and scanned to acquire CT images of the EPID. The CT images were imported into Pinnacle³ and were used as a quality assurance phantom to calculate dose on the EPID setup at a source to detector distance of 105 cm. The best match of the dose distributions was obtained considering the image plane located at 106 cm from the source to detector plane. The EPID was calibrated according to the manufacturer procedure and corrections were made for output factors. Arm-backscattering effect, based on profile correction curves, has been introduced. Five low-modulated and three high-modulated clinical planned treatments were predicted and measured with the method presented here and with MatriXX (IBA Dosimetry, Schwarzenbruck, Germany).

RESULTS

A portal dose prediction method based on Pinnacle³ was developed without modifying the commissioned parameters of the model in use in the clinic. CT images of the EPID were acquired and used as a quality assurance phantom. The CT images indicated a mean density of 1.16 g/cm³ for the sensitive area of the EPID. Output factor measured with the EPID were lower for small fields and larger for larger fields (beyond 10 × 10 cm² ). Arm-backscatter correction showed a better agreement at the target side of the EPID. Analysis of Gamma index comparison (3%, 3 mm) indicated a minimum of 97.4% pass rate for low modulated and 98.3% for high modulated treatments. Pass rates were similar for MatriXX measurements.

CONCLUSIONS

The method developed here can be easily implemented into clinic, as neither additional modeling of the clinical energy nor an independent image prediction algorithm are necessary. The main advantage of this method is that portal dose prediction is calculated with the same algorithm and beam model used for patient dose distribution calculation. This method was independently validated with an ionization chamber matrix.

Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries

We investigated during the first lithiation/delithiation process the electrochemical reaction mechanisms at the surface of 30 nm n-doped amorphous silicon (a-Si) thin film used as a negative model electrode for Li-ion batteries. Usage of thin film allowed us to accurately discern the different reaction mechanisms occurring at the surface by avoiding interference from carbon and binder components. The potential dependency of the evolution of the solid electrolyte interphase (SEI) and the reactions on the a-Si and on the copper current collector were elucidated by coupling galvanostatic cycling with postmortem X-ray photoemission spectroscopy and scanning electron microscopy analyses. Our approach revealed the clear reversibility of lithiation/delithiation in the a-Si and native SiO₂ layers; such a reaction for SiO₂ has not been previously detected and was considered to be an irreversible process. Quantitative and qualitative analyses of the potential-dependent surface evolution revealed the decomposition products of both the salt (LiPF₆) and solvent (dimethyl carbonate/ethylene carbonate), giving insight into the complex SEI formation mechanism on the a-Si film but also underlining the strong influence of "inert" materials such as the role of the current collector in the irreversible charge loss. A model mechanism describing the evolutionary complexity of the a-Si surface during the first galvanostatic cycle is proposed and discussed.

Monitoring Volumetric Changes in Silicon Thin-Film Anodes through In Situ Optical Diffraction Microscopy

A high-resolution in situ spectroelectrochemical optical diffraction experiment has been developed to understand the volume expansion/contraction process of amorphous silicon (a-Si) thin-film anodes. Electrodes consisting of 1D transmissive gratings of silicon have been produced through photolithographic methods. After glovebox assembly in a home-built Teflon cell, monitoring of the diffraction efficiency of these gratings during the lithiation/delithiation process is performed using an optical microscope equipped with a Bertrand lens. When the diffraction efficiency along with optical constants obtained from in situ spectroscopic ellipsometry is utilized, volume changes of the active materials can be deduced. Unlike transmission electron microscopy and atomic force microscopy characterization methods of observing silicon's volume expansion, this experiment allows for real-time monitoring of the volume change at charge/discharge cycles greater than just the first few along with an experimental environment that directly mimics that of a real battery. This technique shows promising results that provide needed insight into understanding the lithium alloying reaction and subsequent induced capacity fade during the cycling of alloying anodes in lithium-ion batteries.

Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics

While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

Highly Efficient Hybrid Polymer and Amorphous Silicon Multijunction Solar Cells with Effective Optical Management

Highly efficient hybrid multijunction solar cells are constructed with a wide-bandgap amorphous silicon for the front subcell and a low-bandgap polymer for the back subcell. Power conversion efficiencies of 11.6% and 13.2% are achieved in tandem and triple-junction configurations, respectively. The high efficiencies are enabled by deploying effective optical management and by using photoactive materials with complementary absorption.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots

Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs.

Enhancing the Performance of Amorphous-Silicon Photoanodes for Photoelectrocatalytic Water Oxidation

Herein, hydrogenated amorphous Si (a-Si:H) covered with a thin layer of CoOx is applied as photoanode for PEC water splitting. The thin layer of CoOx effectively protects a-Si:H from the corrosive electrolyte and quantitative oxidation of water to oxygen was observed. A high applied bias photon-to-current efficiency of 2.34 % was achieved using an intrinsic absorber and an additional p-type layer. This work shows that a-Si:H with a sandwich-like structure, in which each layer has its own functionality, can be applied as an efficient and stable photoanode for PEC water oxidation.

High-Performance and Omnidirectional Thin-Film Amorphous Silicon Solar Cell Modules Achieved by 3D Geometry Design

High-performance thin-film hydrogenated amorphous silicon solar cells are achieved by combining macroscale 3D tubular substrates and nanoscaled 3D cone-like antireflective films. The tubular geometry delivers a series of advantages for large-scale deployment of photovoltaics, such as omnidirectional performance, easier encapsulation, decreased wind resistance, and easy integration with a second device inside the glass tube.

Glassy Metal Alloy Nanofiber Anodes Employing Graphene Wrapping Layer: Toward Ultralong-Cycle-Life Lithium-Ion Batteries

Amorphous silicon (a-Si) has been intensively explored as one of the most attractive candidates for high-capacity and long-cycle-life anode in Li-ion batteries (LIBs) primarily because of its reduced volume expansion characteristic (∼280%) compared to crystalline Si anodes (∼400%) after full Li(+) insertion. Here, we report one-dimensional (1-D) electrospun Si-based metallic glass alloy nanofibers (NFs) with an optimized composition of Si60Sn12Ce18Fe5Al3Ti2. On the basis of careful compositional tailoring of Si alloy NFs, we found that Ce plays the most important role as a glass former in the formation of the metallic glass alloy. Moreover, Si-based metallic glass alloy NFs were wrapped by reduced graphene oxide sheets (specifically Si60Sn12Ce18Fe5Al3Ti2 NFs@rGO), which can prevent the direct exposure of a-Si alloy NFs to the liquid electrolyte and stabilize the solid-electrolyte interphase (SEI) layers on the surfaces of rGO sheets while facilitating electron transport. The metallic glass nanofibers exhibited superior electrochemical cell performance as an anode: (i) Si60Sn12Ce18Fe5Al3Ti2 NFs show a high specific capacity of 1017 mAh g(-1) up to 400 cycles at 0.05C with negligible capacity loss as well as superior cycling performance (nearly 99.9% capacity retention even after 2000 cycles at 0.5C); (ii) Si60Sn12Ce18Fe5Al3Ti2 NFs@rGO reveals outstanding rate behavior (569.77 mAh g(-1) after 2000 cycles at 0.5C and a reversible capacity of around 370 mAh g(-1) at 4C). We demonstrate the potential suitability of multicomponent a-Si alloy NFs as a long-cycling anode material.

Abnormal behavior of threshold voltage shift in bias-stressed a-Si:H thin film transistor under extremely high intensity illumination

We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination.

DNA Translocation in Nanometer Thick Silicon Nanopores

Solid-state nanopores are single-molecule sensors that detect changes in ionic conductance (ΔG) when individual molecules pass through them. Producing high signal-to-noise ratio for the measurement of molecular structure in applications such as DNA sequencing requires low noise and large ΔG. The latter is achieved by reducing the nanopore diameter and membrane thickness. While the minimum diameter is limited by the molecule size, the membrane thickness is constrained by material properties. We use molecular dynamics simulations to determine the theoretical thickness limit of amorphous Si membranes to be ∼1 nm, and we designed an electron-irradiation-based thinning method to reach that limit and drill nanopores in the thinned regions. Double-stranded DNA translocations through these nanopores (down to 1.4 nm in thickness and 2.5 nm in diameter) provide the intrinsic ionic conductance detection limit in Si-based nanopores. In this regime, where the access resistance is comparable to the nanopore resistance, we observe the appearance of two conductance levels during molecule translocation. Considering the overall performance of Si-based nanopores, our work highlights their potential as a leading material for sequencing applications.

In Situ PL and SPV Monitored Charge Carrier Injection During Metal Assisted Etching of Intrinsic a-Si Layers on c-Si

Although hydrogenated amorphous silicon is already widely examined regarding its structural and electronic properties, the chemical etching behavior of this material is only roughly understood. We present a detailed study of the etching properties of intrinsic hydrogenated amorphous silicon, (i)a-Si:H, layers on crystalline silicon, c-Si, within the framework of metal assisted chemical etching (MACE) using silver nanoparticles (Ag NPs). The etching processes are examined by in situ photoluminescence (PL) and in situ surface photovoltage (SPV) measurements, as these techniques allow a monitoring of the hole injection that takes place during MACE. By in situ PL measurements and SEM images, we could interpret the different stages of the MACE process of (i)a-Si:H layers and determine etch rates of (i)a-Si:H, that are found to be influenced by the size of the Ag NPs. In situ PL and in situ SPV measurements both enable researchers to determine when the Ag NPs reach the (i)a-Si:H/c-Si interface. Furthermore, a preferential MACE of (i)a-Si:H versus c-Si is revealed for the first time. This effect could be explained by an interplay of the different thermodynamic and structural properties of the two materials as well as by hole injection during MACE resulting in a field effect passivation. The presented results allow an application of the examined MACE processes for Si nanostructuring applications.

Hybrid organic/inorganic thin-film multijunction solar cells exceeding 11% power conversion efficiency

Hybrid multijunction solar cells comprising hydrogenated amorphous silicon and an organic bulk heterojunction are presented, reaching 11.7% power conversion efficiency. The benefits of merging inorganic and organic subcells are pointed out, the optimization of the cells, including optical modeling predictions and tuning of the recombination contact are described, and an outlook of this technique is given.

Atom-Level Understanding of the Sodiation Process in Silicon Anode Material

Despite the exceptionally large capacities in Li ion batteries, Si has been considered inappropriate for applications in Na ion batteries. We report an atomic-level study on the applicability of a Si anode in Na ion batteries using ab initio molecular dynamics simulations. While crystalline Si is not suitable for alloying with Na atoms, amorphous Si can accommodate 0.76 Na atoms per Si atom, corresponding to a specific capacity of 725 mA h g(-1). Bader charge analyses reveal that the sodiation of an amorphous Si electrode continues until before the local Na-rich clusters containing neutral Na atoms are formed. The amorphous Na0.76Si phase undergoes a volume expansion of 114% and shows a Na diffusivity of 7 × 10(-10) cm(2) s(-1) at room temperature. Overall, the amorphous Si phase turns out quite attractive in performance compared to other alloy-type anode materials. This work suggests that amorphous Si might be a competitive candidate for Na ion battery anodes.

Raman Spectroscopy of Oxide-Embedded and Ligand-Stabilized Silicon Nanocrystals

Oxide-embedded and oxide-free alkyl-terminated silicon (Si) nanocrystals with diameters ranging from 3 nm to greater than 10 nm were studied by Raman spectroscopy. For ligand-passivated nanocrystals, the zone center Raman-active mode of diamond cubic Si shifted to lower frequency with decreasing size, accompanied by asymmetric peak broadening, as extensively reported in the literature. The size dependence of the Raman peak shifts, however, was significantly more pronounced than previously reported or predicted by the RWL (Richter, Wang, and Ley) and bond polarizability models. In contrast, Raman peak shifts for oxide-embedded nanocrystals were significantly less pronounced as a result of the stress induced by the matrix.

Amorphous silicon nanocone array solar cell

In the hydrogenated amorphous silicon [a-Si:H]-thin film solar cell, large amounts of traps reduce the carrier's lifetime that limit the photovoltaic performance, especially the power conversion efficiency. The nanowire structure is proposed to solve the low efficiency problem. In this work, we propose an amorphous silicon [a-Si]-solar cell with a nanocone array structure were implemented by reactive-ion etching through a polystyrene nanosphere template. The amorphous-Si nanocone exhibits absorption coefficient around 5 × 105/cm which is similar to the planar a-Si:H layer in our study. The nanostructure could provide the efficient carrier collection. Owing to the better carrier collection efficiency, efficiency of a-Si solar cell was increased from 1.43% to 1.77% by adding the nanocone structure which has 24% enhancement. Further passivation of the a-Si:H surface by hydrogen plasma treatment and an additional 10-nm intrinsic-a-Si:H layer, the efficiency could further increase to 2.2%, which is 54% enhanced as compared to the planar solar cell. The input-photon-to-current conversion efficiency spectrum indicates the efficient carrier collection from 300 to 800 nm of incident light.

High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon

We report on the structural investigation of self-organized periodic microstructures (ripples) generated in Si(100) targets after multishot irradiation by approximately 100-fs to 800-nm laser pulses at intensities near the single shot ablation threshold. Inspection by surface sensitive microscopy, e.g., atomic force microscopy (AFM) or scanning electron microscopy (SEM), and conventional and high-resolution transmission electron microscopy reveal complex structural modifications upon interaction with the laser: even well outside the ablated area, the target surface exhibits fine ripple-like undulations, consisting of alternating crystalline and amorphous silicon. Inside the heavily modified area, amorphous silicon is found only in the valleys but not on the crests which, instead, consist of highly distorted crystalline phases, rich in defects.

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.