Fully Depleted Monolithic Active Microstrip Sensors: TCAD Simulation Study of an Innovative Design Concept

The paper presents the simulation studies of 10 μm pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A set of Technology Computer-Aided Design (TCAD) parametric simulations was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics, and optimizing the sensor layout for enhanced performance in terms of low capacitance, fast charge collection, and low-power operation. A fine pitch of 10 μm was chosen to provide high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionizing doses of the order of 10 to 105 krad were also modeled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available from mid-2021.

A disc-chip based high-throughput acute toxicity detection system

Acute toxicity assay presents vital significance in modern environmental monitoring, including online detection and in-situ assay for emergency events. Although photobacteria related detection methods were established and verified in the past decades with combination of photomultiplier tube (PMT), the price and size of PMT sensor hampered application of rapid acute toxicity assay and detection system miniaturization, especially in the resource-limited occasions. Wide application of smartphones with great low-light performance cameras could be used in photobacteria-based toxicity assay instead of the PMT methods. Herein a box-type portable detection system had been successfully established, including a disc-chip for detection, detection device, and smartphones with a high-performance camera. The system performed well showing stable temperature and rotation control. Results captured by CMOS-based camera presented a linear relationship with PMT-based detection method. An image progress algorithm was also established and tested by series diluted zinc sulfate solution as a reference substance. The system also performed well for toxicity analysis for real Atmospheric particle matter sample. The system could be used in some environmental monitoring scenarios as an alternative solution.

On the Response of a Micro Non-Destructive Testing X-ray Detector

Certain imaging performance metrics are examined for a state-of-the-art 20 μm pixel pitch CMOS sensor (RadEye HR), coupled to a Gd₂O₂S:Tb scintillator screen. The signal transfer property (STP), the modulation transfer function (MTF), the normalized noise power spectrum (NNPS) and the detective quantum efficiency (DQE) were estimated according to the IEC 62220-1-1:2015 standard. The detector exhibits excellent linearity (coefficient of determination of the STP linear regression fit, R² was 0.9978), while its DQE peaks at 33% and reaches 10% at a spatial frequency of 3 cycles/mm, for the measured with a Piranha RTI dosimeter (coefficient of variation CV = 0.03%) exposure value of 28.1 μGy DAK (detector Air Kerma). The resolution capabilities of the X-ray detector under investigation were compared to other commercial CMOS sensors, and were found in every case higher, except from the previous RadEye HR model (CMOS-Gd₂O₂S:Tb screen pair with 22.5 μm pixel pitch) version which had slightly better MTF. The present digital imager is designed for industrial inspection applications, nonetheless its applicability to medical imaging, as well as dual-energy is considered and certain approaches are discussed in this respect.

A New Smart CMOS Image Sensor with On-Chip Neuro-Fuzzy Bleeding Detection System for Wireless Capsule Endoscopy

Background:

In this paper, we have presented a new custom smart CMOS image sensor (CIS) for low power wireless capsule endoscopy.

Method:

The proposed new smart CIS includes a 256 × 256 current mode pixels array with a new on-chip adaptive neuro-fuzzy inference system that has been used to diagnosing bleeding images. We use a new pinned photodiode to realize the current mode of active pixels in the standard CMOS process. The proposed chip has been implemented in 0.18 μm CMOS 1P6M TSMC RF technology with a die area of 7 mm × 8 mm.

Results and Conclusion:

A built-in smart bleeding detection system on CIS leads to decrease in the RF transmitter power consumption near zero. The average power dissipation of the proposed smart CIS is 610 μW.

Switched-Biasing Techniques for CMOS Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) is a key component to generate high-speed clock of mixed-mode circuits and local oscillation signals of the frequency conversion in wired and wireless application systems. In particular, the recent evolution of new high-speed wireless systems in the millimeter-wave frequency band calls for the implementation of the VCO with high oscillation frequency and low close-in phase noise. The effect of the flicker noise on the phase noise of the VCO should be minimized because the flicker noise dramatically increases as the deep-submicron complementary metal-oxide-semiconductor (CMOS) process is scaled down, and the flicker corner frequency also increases, up to several MHz, in the up-to-date CMOS process. The flicker noise induced by the current source is a major factor affecting the phase noise of the VCO. Switched-biasing techniques have been proposed to minimize the effect of the flicker noise at the output of the VCO with biasing AC-coupled signals at the current source of the VCO. Reviewing the advantages and disadvantages reported in the previous studies, it is analyzed which topology to implement the switched-biasing technique is advantageous for improving the performance of the CMOS VCOs.

Measurement of Cell Volume Using In-Line Digital Holography

The measurement of the volume of blood cells is important for clinical diagnosis and patient management. While digital holography microscopy (DHM) has been used to obtain such information, previous off-axis setups usually involve a separated reference beam and are thus not very easy to implement. Here, we use the simple in-line Gabor setup without separation of a reference beam to measure the shape and volume of cells mounted on glass slides. Inherent to the in-line holograms, the reconstructed phase of the object is affected by the virtual image noise, producing errors in the cell volume measurement. We optimized our approach to use a single hologram without phase retrieval, increasing distance between cell and hologram plane to reduce the measurement error of cell volume to less than 6% in some instances. Therefore, the in-line Gabor setup can be a useful and simple tool to obtain volumetric and morphologic cellular information.

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm², with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm.

Machine Learning-Based Pipeline for High Accuracy Bioparticle Sizing

High accuracy measurement of size is essential in physical and biomedical sciences. Various sizing techniques have been widely used in sorting colloidal materials, analyzing bioparticles and monitoring the qualities of food and atmosphere. Most imaging-free methods such as light scattering measure the averaged size of particles and have difficulties in determining non-spherical particles. Imaging acquisition using camera is capable of observing individual nanoparticles in real time, but the accuracy is compromised by the image defocusing and instrumental calibration. In this work, a machine learning-based pipeline is developed to facilitate a high accuracy imaging-based particle sizing. The pipeline consists of an image segmentation module for cell identification and a machine learning model for accurate pixel-to-size conversion. The results manifest a significantly improved accuracy, showing great potential for a wide range of applications in environmental sensing, biomedical diagnostical, and material characterization.

Single-Electron Operation of a Silicon-CMOS 2 × 2 Quantum Dot Array with Integrated Charge Sensing

The advanced nanoscale integration available in CMOS technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multigate designs. We show that quantum dots formed in a CMOS nanowire device can be measured with a remote single electron transistor (SET) formed in an adjacent nanowire, via floating coupling gates. By biasing the SET nanowire with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling control of all quantum dots in a 2 × 2 array, and charge sensing down to the last electron in each dot. We use effective mass theory to investigate the ideal geometrical parameters in order to achieve interdot tunnel rates required for spin-based quantum computation.

Design and Analysis of a Sample-and-Hold CMOS Electrochemical Sensor for Aptamer-based Therapeutic Drug Monitoring

In this paper, we present the design and the analysis of an electrochemical circuit for measuring the concentrations of therapeutic drugs using structure-switching aptamers. Aptamers are single-stranded nucleic acids, whose sequence is selected to exhibit high affinity and specificity toward a molecular target, and change its conformation upon binding. This property, when coupled with a redox reporter and electrochemical detection, enables reagent-free biosensing with a sub-minute temporal resolution for in vivo therapeutic drug monitoring. Specifically, we design a chronoamperometry-based electrochemical circuit that measures the direct changes in the electron transfer (ET) kinetics of a methylene blue reporter conjugated at the distal-end of the aptamer. To overcome the high-frequency noise amplification issue when interfacing with a large-size (> 0.25 mm2) implantable electrode, we present a sample-and-hold (S/H) circuit technique in which the desired electrode potentials are held onto noiseless capacitors during the recording of the redox currents. This allows disconnecting the feedback amplifiers to avoid its noise injection while reducing the total power consumption. A prototype circuit implemented in 65-nm CMOS demonstrates a cell-capacitance-insensitive input-referred noise (IRN) current of 15.2 pArms at a 2.5-kHz filtering bandwidth. We tested our system in human whole blood samples and measured the changes in the ET kinetics from the redox-labeled aptamers at different kanamycin concentrations. By employing principal component analysis (PCA) to compensate for the sampling errors, we report a molecular noise floor (at SNR = 1) of 3.1 µM with sub 1-sec acquisition time at 0.22-mW power consumption.

A Gadolinium Metal-Organic Framework Film as a Converter Layer for Neutron Detection

Metal-organic frameworks (MOFs) are known for their versatility in terms of their crystalline structure, porosity, resistance to temperature, radiation damage, and luminescence among others. Gadolinium (Gd) is one of the elements with the highest reported cross-section for low energy neutron capture, producing internal conversion electrons and γ rays as a result of the neutron absorption. The development of Gd-BTC films (BTC=1,3,5-benzenetricarboxylate) is shown that were deposited on Si and Al substrates by airbrushing, and characterized by profilometry, Raman, EDX and X-ray diffraction. Radiation damage, thermal decomposition and neutron absorption of these films were studied as well. Gd-BTC films were attached to CMOS devices (Complementary Metal-Oxide-Semiconductor), which are sensible to the internal conversion electrons, in order to build a neutron detector. The devices Gd-BTC/CMOS could selectively detect neutrons in the presence of γ rays with a thermal neutron detection efficiency of 3.3±0.1 %, a signal to noise ratio of 6 : 1, and were suitable to obtain images.

Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.

Rapid Detection of Azole-Resistant Aspergillus fumigatus in Clinical and Environmental Isolates by Use of a Lab-on-a-Chip Diagnostic System

Aspergillus fumigatus has widely evolved resistance to the most commonly used class of antifungal chemicals, the azoles. Current methods for identifying azole resistance are time-consuming and depend on specialized laboratories. There is an urgent need for rapid detection of these emerging pathogens at point-of-care to provide the appropriate treatment in the clinic and to improve management of environmental reservoirs to mitigate the spread of antifungal resistance. Our study demonstrates the rapid and portable detection of the two most relevant genetic markers linked to azole resistance, the mutations TR34 and TR46, found in the promoter region of the gene encoding the azole target cyp51A. We developed a lab-on-a-chip platform consisting of: (i) tandem-repeat loop-mediated isothermal amplification; (ii) state-of-the-art complementary metal-oxide-semiconductor microchip technology for nucleic acid amplification detection; and (iii) a smartphone application for data acquisition, visualization, and cloud connectivity. Specific and sensitive detection was validated with isolates from clinical and environmental samples from 6 countries across 5 continents, showing a lower limit of detection of 10 genomic copies per reaction in less than 30 min. When fully integrated with a sample preparation module, this diagnostic system will enable the detection of this ubiquitous fungus at the point-of-care, and could help to improve clinical decision making, infection control, and epidemiological surveillance.

Dynamic Behavior of Biomaterials Uncovered by Cryo-electron Microscopy

Structural biology develops rapidly with time. The static structure analysis of biomaterials is not enough to satisfy the studies of their functional mechanisms, with a huge obstacle for the dynamic process of biological complexes. The rapid development of cryo-electron microscopy (cryo-EM) technology makes it possible to observe the near-atomic resolution structures and dynamic nature of biological macromolecules, in the fields of dynamic characteristics of proteins, protein-protein interactions, molecular recognition, and structure-based design. In this review, we systematically elaborate the contribution of cryo-EM technology in the field of biomaterials such as ribosome motion, membrane protein structure and conformational space, dynamic transmission within the plasma membrane and clinical applications. We also put forward a new standpoint in the development of cryo-EM technology.

A Highly Accurate, Polynomial-Based Digital Temperature Compensation for Piezoresistive Pressure Sensor in 180 nm CMOS Technology

Recently, piezoresistive-type (PRT) pressure sensors have been gaining attention in variety of applications due to their simplicity, low cost, miniature size and ruggedness. The electrical behavior of a pressure sensor is highly dependent on the temperature gradient which seriously degrades its reliability and reduces measurement accuracy. In this paper, polynomial-based adaptive digital temperature compensation is presented for automotive piezoresistive pressure sensor applications. The non-linear temperature dependency of a pressure sensor is accurately compensated for by incorporating opposite characteristics of the pressure sensor as a function of temperature. The compensation polynomial is fully implemented in a digital system and a scaling technique is introduced to enhance its accuracy. The resource sharing technique is adopted for minimizing controller area and power consumption. The negative temperature coefficient (NTC) instead of proportional to absolute temperature (PTAT) or complementary to absolute temperature (CTAT) is used as the temperature-sensing element since it offers the best temperature characteristics for grade 0 ambient temperature operating range according to the automotive electronics council (AEC) test qualification ACE-Q100. The shared structure approach uses an existing analog signal conditioning path, composed of a programmable gain amplifier (PGA) and an analog-to-digital converter (ADC). For improving the accuracy over wide range of temperature, a high-resolution sigma-delta ADC is integrated. The measured temperature compensation accuracy is within ±0.068% with full scale when temperature varies from −40 °C to 150 °C according to ACE-Q100. It takes 37 µs to compute the temperature compensation with a clock frequency of 10 MHz. The proposed technique is integrated in an automotive pressure sensor signal conditioning chip using a 180 nm complementary metal–oxide–semiconductor (CMOS) process.

Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS's performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

The CMOS Highly Linear Current Amplifier with Current Controlled Gain for Sensor Measurement Applications

This paper introduces a new current-controlled current-amplifier suitable for precise measurement applications. This amplifier was developed with strong emphasis on linearity leading to low total harmonic distortion (THD) of the output signal, and on linearity of the gain control. The presented circuit is characterized by low input and high output impedances. Current consumption is significantly smaller than with conventional quadratic current multipliers and is comparable in order to the maximum processed input current, which is ±200 µA. This circuit is supposed to be used in many sensor applications, as well as a precise current multiplier for general analog current signal processing. The presented amplifier (current multiplier) was designed by an uncommon topology based on linear sub-blocks using MOS transistors working in their linear region. The described circuit was designed and fabricated in a C035 I3T25 0.35-µm ON Semiconductor process because of the demand of the intended application for higher supply voltage. Nevertheless, the topology is suitable also for modern smaller CMOS technologies and lower supply voltages. The performance of the circuit was verified by laboratory measurement with parameters comparable to the Cadence simulation results and presented here.

State of the Art and Future Perspectives in Advanced CMOS Technology

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today's transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore's law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

Single-Event Transients in an IEEE 802.15.4 RF Receiver for Wireless Sensor Networks

This paper presents a procedure to analyse the effects of radiation in an IEEE 802.15.4 RF receiver for wireless sensor networks (WSNs). Specifically, single-event transients (SETs) represent one of the greatest threats to the adequate performance of electronic communication devices in high-radiation environments. The proposed procedure consists in injecting current pulses in sensitive nodes of the receiver and analysing how they propagate through the different circuits that form the receiver. In order to perform this analysis, a Complementary Metal Oxide Semiconductor (CMOS) low-IF receiver has been designed using a 0.18 μm technology from the foundry UMC. In order to analyse the effect of single-event transients in this receiver, it has been studied how current pulses generated in the low-noise amplifier propagate down the receiver chain. The effect of the different circuits that form the receiver on this kind of pulse has been studied prior to the analysis of the complete receiver. First, the effect of SETs in low-noise amplifiers was analysed. Then, the propagation of pulses through mixers was studied. The effect of filters in the analysed current pulses has also been studied. Regarding the analysis of the designed RF receiver, an amplitude and phase shift was observed under the presence of SETs.

Fast Detection of 2,4,6-Trinitrotoluene (TNT) at ppt Level by a Laser-Induced Immunofluorometric Biosensor

The illegal use of explosives by terrorists and other criminals is an increasing issue in public spaces, such as airports, railway stations, highways, sports venues, theaters, and other large buildings. Security in these environments can be achieved by different means, including the installation of scanners and other analytical devices to detect ultra-small traces of explosives in a very short time-frame to be able to take action as early as possible to prevent the detonation of such devices. Unfortunately, an ideal explosive detection system still does not exist, which means that a compromise is needed in practice. Most detection devices lack the extreme analytical sensitivity, which is nevertheless necessary due to the low vapor pressure of nearly all explosives. In addition, the rate of false positives needs to be virtually zero, which is also very difficult to achieve. Here we present an immunosensor system based on kinetic competition, which is known to be very fast and may even overcome affinity limitation, which impairs the performance of many traditional competitive assays. This immunosensor consists of a monolithic glass column with a vast excess of immobilized hapten, which traps the fluorescently labeled antibody as long as no explosive is present. In the case of the explosive 2,4,6-trinitrotoluene (TNT), some binding sites of the antibody will be blocked, which leads to an immediate breakthrough of the labeled protein, detectable by highly sensitive laser-induced fluorescence with the help of a Peltier-cooled complementary metal-oxide-semiconductor (CMOS) camera. Liquid handling is performed with high-precision syringe pumps and chip-based mixing-devices and flow-cells. The system achieved limits of detection of 1 pM (1 ppt) of the fluorescent label and around 100 pM (20 ppt) of TNT. The total assay time is less than 8 min. A cross-reactivity test with 5000 pM solutions showed no signal by pentaerythritol tetranitrate (PETN), 1,3,5-trinitroperhydro-1,3,5-triazine (RDX), and octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (HMX). This immunosensor belongs to the most sensitive and fastest detectors for TNT with no significant cross-reactivity by non-related compounds. The consumption of the labeled antibody is surprisingly low: 1 mg of the reagent would be sufficient for more than one year of continuous biosensor operation.

Monitoring of infection volatile markers using CMOS-based luminescent bioreporters

Over the past two decades, whole-cell biosensors (WCBs) have been widely used in the environmental field, with only few applications proposed for use in agricultural. This study describes the development and optimization of a WCB for the detection of volatile organic compounds (VOCs) that is produced specifically by infected potato tubers. First, the effect of calcium-alginate matrix formation (beads vs. tablets) on the membrane uniformity and sensing efficiency was evaluated. Then, important parameters in the immobilization process were examined for their effect on the sensitivity to the presence of VOCs. The highest sensitivity to the target VOC was obtained by 20 min polymerization of bacterial suspension with optical density of 0.2 at 600 nm, dissolved in low-viscosity sodium alginate (1.5% w/v) and exposure to VOC at 4 °C. After optimization, the lowest limit of detection for three infection-sourced VOCs (nonanal, 3-methyl-1-butanol, and 1-octen-3-ol) was 0.17-, 2.03-, and 2.09-mg/L, respectively, and the sensor sensitivity was improved by 8.9-, 3.1- and 2-fold, respectively. Then, the new optimized immobilization protocol was implemented for the CMOS-based application, which increased the sensor sensitivity to VOC by 3-fold during real-time measurement. This is the first step in creating a sensor for real-time monitoring of crop quality by identifying changes in VOC patterns.

A 1-nS 1-V Sub-1-µW Linear CMOS OTA with Rail-to-Rail Input for Hz-Band Sensory Interfaces

The paper presents an operational transconductance amplifier (OTA) with low transconductance (0.62–6.28 nS) and low power consumption (28–270 nW) for the low-frequency analog front-ends in biomedical sensor interfaces. The proposed OTA implements an innovative, highly linear voltage-to-current converter based on the channel-length-modulation effect, which can be rail-to-rail driven. At 1-V supply and 1-V_pp asymmetrical input driving, the linearity error in the current-voltage characteristics is 1.5%, while the total harmonic distortion (THD) of the output current is 0.8%. For a symmetrical 2-V_pp input drive, the linearity error is 0.3%, whereas THD reaches 0.2%. The linearity is robust for the mismatch and the process-voltage-and-temperature (PVT) variations. The temperature drift of transconductance is 10 pS/°C. The prototype circuit was fabricated in 180-nanometer CMOS technology.

Crosstalk Analysis of a CMOS Single Membrane Thermopile Detector Array

We present a new experimental technique to characterise the crosstalk of a thermopile-based thermal imager, based on bi-directional electrical heating of thermopile elements. The new technique provides a significantly simpler and more reliable method to determine the crosstalk, compared to a more complex experimental setup with a laser source. The technique is used to characterise a novel single-chip array, fabricated on a single dielectric membrane. We propose a theoretical model to simulate the crosstalk, which shows good agreement with the experimental results. Our results allow a better understanding of the thermal effects in these devices, which are at the center of a rising market of industrial and consumer applications.

Design and Integration of a Wireless Stretchable Multimodal Sensor Network in a Composite Wing

This article presents the development of a stretchable sensor network with high signal-to-noise ratio and measurement accuracy for real-time distributed sensing and remote monitoring. The described sensor network was designed as an island-and-serpentine type network comprising a grid of sensor “islands” connected by interconnecting “serpentines.” A novel high-yield manufacturing process was developed to fabricate networks on recyclable 4-inch wafers at a low cost. The resulting stretched sensor network has 17 distributed and functionalized sensing nodes with low tolerance and high resolution. The sensor network includes Piezoelectric (PZT), Strain Gauge (SG), and Resistive Temperature Detector (RTD) sensors. The design and development of a flexible frame with signal conditioning, data acquisition, and wireless data transmission electronics for the stretchable sensor network are also presented. The primary purpose of the frame subsystem is to convert sensor signals into meaningful data, which are displayed in real-time for an end-user to view and analyze. The challenges and demonstrated successes in developing this new system are demonstrated, including (a) developing separate signal conditioning circuitry and components for all three sensor types (b) enabling simultaneous sampling for PZT sensors for impact detection and (c) configuration of firmware/software for correct system operation. The network was expanded with an in-house developed automated stretch machine to expand it to cover the desired area. The released and stretched network was laminated into an aerospace composite wing with edge-mount electronics for signal conditioning, processing, power, and wireless communication.

Automotive 3.0 µm Pixel High Dynamic Range Sensor with LED Flicker Mitigation

We present and discuss parameters of a high dynamic range (HDR) image sensor with LED flicker mitigation (LFM) operating in automotive temperature range. The total SNR (SNR including dark fixed pattern noise), of the sensor is degraded by floating diffusion (FD) dark current (DC) and dark signal non-uniformity (DSNU). We present results of FD DC and DSNU reduction, to provide required SNR versus signal level at temperatures up to 120 °C. Additionally we discuss temperature dependencies of quantum efficiency (QE), sensitivity, color effects, and other pixel parameters for backside illuminated image sensors. Comparing +120 °C junction vs. room temperature, in visual range we measured a few relative percent increase, while in 940 nm band range we measured 1.46x increase in sensitivity. Measured change of sensitivity for visual bands—such as blue, green, and red colors—reflected some impact to captured image color accuracy that created slight image color tint at high temperature. The tint is, however, hard to detect visually and may be removed by auto white balancing and temperature adjusted color correction matrixes.