A 6-Transistor Ultra-Low Power CMOS Voltage Reference with 0.02%/V Line Sensitivity

This work presents a technique for design of ultra-low power (ULP) CMOS voltage references achieving extremely low line sensitivity while maintaining state-of-the-art temperature insensitivity through the use of a 6-transistor (6T) structure. The proposed technique demonstrates good performance in sub-100 nm CMOS technologies. The 65-nm CMOS implementation occupies only 840 μm² of area and consumes 28.6 pA from a 0.5 V supply. Measurements from 6 samples from the same wafer show an average line sensitivity of 0.02 %/V, a 10X improvement over previous 65 nm implementations, and an average temperature coefficient of 99.2 ppm/°C.

A review on the ability of smartphones to detect ultraviolet (UV) radiation and their potential to be used in UV research and for public education purposes

The effects of ultraviolet (UV) radiation on life on Earth have continuously been the subject of research. Over-exposure to UV radiation is harmful, but small amounts of exposure are required for good health. It is, therefore, crucial for humans to optimise their own UV exposure and not exceed UV levels that are sufficient for essential biological functions. Exceeding those levels may increase risk of developing health problems including skin cancer and cataracts. Smartphones have been previously investigated for their ability to detect UV radiation with or without additional devices that monitor personal UV exposure, in order to maintain safe exposure times by individuals. This review presents a comprehensive overview of the current state of smartphones' use in UV radiation monitoring and prediction. There are four main methods for UV radiation detection or prediction involving the use smartphones, depending on the requirements of the user: devoted software applications developed for smartphones to predict UV Index (UVI), wearable and non-wearable devices that can be used with smartphones to provide real-time UVI, and the use of smartphone image sensors to detect UV radiation. The latter method has been a growing area of research over the last decade. Built-in smartphone image sensors have been investigated for UV radiation detection and the quantification of related atmospheric factors (including aerosols, ozone, clouds and volcanic plumes). The overall practicalities, limitations and challenges are reviewed, specifically in regard to public education. The ubiquitous nature of smartphones can provide an interactive tool when considering public education on the effects and individual monitoring of UV radiation exposure, although social and geographic areas with low socio-economic factors could challenge the usefulness of smartphones. Overall, the review shows that smartphones provide multiple opportunities in different forms to educate users on personal health with respect to UV radiation.

Miniaturized 0.13-μm CMOS Front-End Analog for AlN PMUT Arrays

This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric micromachined ultrasonic transducer (CMOS-AlN-PMUT). The system was designed using the 0.13-μm Silterra CMOS process and the MEMS-on-CMOS platform, which allowed for the implementation of an AlN PMUT on top of the CMOS-integrated circuit. The HV transmitter drives a column of six 80-μm-square PMUTs excited with 32 V in order to generate enough acoustic pressure at a 2.1-mm axial distance. On the reception side, another six 80-μm-square PMUT columns convert the received echo into an electric charge that is amplified by the receiver front-end amplifier. A comparative analysis between a voltage front-end amplifier (VA) based on capacitive integration and a charge-sensitive front-end amplifier (CSA) is presented. Electrical and acoustic experiments successfully demonstrated the functionality of the designed low-power analog front-end circuitry, which outperformed a state-of-the art front-end application-specific integrated circuit (ASIC) in terms of power consumption, noise performance, and area.

A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core-Insulator

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core-Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

Using a TRAPS upstream transmission detector to verify multileaf collimator positions during dynamic radiotherapy delivery

With the advancement of high-precision radiotherapy and the increasing use of higher intensity beams, the risk to the patient increases should the radiotherapy machine malfunction. Hence more accurate treatment verification is required. In this paper we provide a solution for real-time monitoring of X-ray beams from radiotherapy linear accelerators using monolithic active pixel sensors. We show that leaf errors can be detected with high precision in static fields and IMRT step and shoot, and accurate leaf tracking is possible in Volumetric Modulated Arc Therapy. The prototype MAPS detector meets the criteria of 1% attenuation acceptable for clinical use.

A Low-Power CMOS Wireless Acoustic Sensing Platform for Remote Surveillance Applications

A low-power wireless acoustic sensing platform for remote surveillance applications based on a 180 nm CMOS technology is proposed in this paper. The audio signal, which is acquired by a microphone, is first amplified and filtered. Then, the analog signal is converted to a digital signal by a 10-bit analog-to-digital converter (ADC). A digital automatic gain control module is integrated to obtain an optimal input of the ADC. The digital signal is modulated and transmitted at the 433 MHz ISM band after being repacked and encoded. To save power for portable applications, the chip switches to standby mode when no audio is detected. The wireless sensing platform occupies a chip area of 1.76 mm 2 . The supply voltage is 2.5 V for the power amplifier and 1.8 V for other circuits. The measured maximum output power is 5.7 dBm and the transmission distance is over 500 m for real application scenarios. The chip consumes 25.1 mW power in normal work mode and 0.058 mW in standby mode. Compared to existing wireless acoustic sensors, the proposed wireless acoustic sensing platform can achieve features such as compactness, power efficiency, and reliability.

An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging

This paper presents a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) capable of capturing UV-selective and visible light images simultaneously by a single exposure and without employing optical filters, suitable for applications that require simultaneous UV and visible light imaging, or UV imaging in variable light environment. The developed CIS is composed by high and low UV sensitivity pixel types, arranged alternately in a checker pattern. Both pixel types were designed to have matching sensitivities for non-UV light. The UV-selective image is captured by extracting the differential spectral response between adjacent pixels, while the visible light image is captured simultaneously by the low UV sensitivity pixels. Also, to achieve high conversion gain and wide dynamic range simultaneously, the lateral overflow integration capacitor (LOFIC) technology was introduced in both pixel types. The developed CIS has a pixel pitch of 5.6 µm and exhibits 172 µV/e- conversion gain, 131 ke- full well capacity (FWC), and 92.3 dB dynamic range. The spectral sensitivity ranges of the high and low UV sensitivity pixels are of 200-750 nm and 390-750 nm, respectively. The resulting sensitivity range after the differential spectral response extraction is of 200-480 nm. This paper presents details regarding the CIS pixels structures, doping profiles, device simulations, and the measurement results for photoelectric response and spectral sensitivity for both pixel types. Also, sample images of UV-selective and visible spectral imaging using the developed CIS are presented.

Quantitative Evaluation of Bone Microstructure using High-Resolution Extremity Cone-Beam CT with a CMOS Detector

Purpose

A high-resolution cone-beam CT (CBCT) system for extremity imaging has been developed using a custom complementary metal-oxide-semiconductor (CMOS) x-ray detector. The system has spatial resolution capability beyond that of recently introduced clinical orthopedic CBCT. We evaluate performance of this new scanner in quantifying trabecular microstructure in subchondral bone of the knee.

Methods

The high-resolution scanner uses the same mechanical platform as the commercially available Carestream OnSight 3D extremity CBCT, but replaces the conventional amorphous silicon flat-panel detector (a-Si:H FPD with 0.137 mm pixels and a ~0.7 mm thick scintillator) with a Dalsa Xineos3030 CMOS detector (0.1 mm pixels and a custom 0.4 mm scintillator). The CMOS system demonstrates ~40% improved spatial resolution (FWHM of a ~0.1 mm tungsten wire) and ~4× faster scan time than FPD-based extremity CBCT (FPD-CBCT). To investigate potential benefits of this enhanced spatial resolution in quantitative assessment of bone microstructure, 26 trabecular core samples were obtained from four cadaveric tibias and imaged using FPD-CBCT (75 μm voxels), CMOS-CBCT (75 μm voxels), and reference micro-CT (μCT, 15 μm voxels). CBCT bone segmentations were obtained using local Bernsen's thresholding combined with global histogram-based pre-thresholding; μCT segmentation involved Otsu's method. Measurements of trabecular thickness (Tb.Th), spacing (Tb.Sp), number (Tb.N) and bone volume (BV/TV) were performed in registered regions of interest in the segmented CBCT and μCT reconstructions.

Results

CMOS-CBCT achieved noticeably improved delineation of trabecular detail compared to FPD-CBCT. Correlations with reference μCT for metrics of bone microstructure were better for CMOS-CBCT than FPD-CBCT, in particular for Tb.Th (increase in Pearson correlation from 0.84 with FPD-CBCT to 0.96 with CMOS-CBCT) and Tb.Sp (increase from 0.80 to 0.85). This improved quantitative performance of CMOS-CBCT is accompanied by a reduction in scan time, from ~60 sec for a clinical high resolution protocol on FPD-CBCT to ~17 sec for CMOS-CBCT.

Conclusion

The CMOS-based extremity CBCT prototype achieves improved performance in quantification of bone microstructure, while retaining other diagnostic capabilities of its FPD-based precursor, including weight-bearing imaging. The new system offers a promising platform for quantitative imaging of skeletal health in osteoporosis and osteoarthritis.

Quantitative and rapid Plasmodium falciparum malaria diagnosis and artemisinin-resistance detection using a CMOS Lab-on-Chip platform

Early and accurate diagnosis of malaria and drug-resistance is essential to effective disease management. Available rapid malaria diagnostic tests present limitations in analytical sensitivity, drug-resistance testing and/or quantification. Conversely, diagnostic methods based on nucleic acid amplification stepped forwards owing to their high sensitivity, specificity and robustness. Nevertheless, these methods commonly rely on optical measurements and complex instrumentation which limit their applicability in resource-poor, point-of-care settings. This paper reports the specific, quantitative and fully-electronic detection of Plasmodium falciparum, the predominant malaria-causing parasite worldwide, using a Lab-on-Chip platform developed in-house. Furthermore, we demonstrate on-chip detection of C580Y, the most prevalent single-nucleotide polymorphism associated to artemisinin-resistant malaria. Real-time non-optical DNA sensing is facilitated using Ion-Sensitive Field-Effect Transistors, fabricated in unmodified complementary metal-oxide-semiconductor (CMOS) technology, coupled with loop-mediated isothermal amplification. This work holds significant potential for the development of a fully portable and quantitative malaria diagnostic that can be used as a rapid point-of-care test.

A 512-Pixel, 51-kHz-Frame-Rate, Dual-Shank, Lens-less, Filter-less Single Photon Avalanche Diode CMOS Neural Imaging Probe

We present an implantable single photon shank-based imager, monolithically integrated onto a single CMOS IC. The imager comprises of 512 single photon avalanche diodes distributed along two shanks, with a 6-bit depth in-pixel memory and an on-chip digital-to-time converter. To scale down the system to a minimally invasive form factor, we substitute optical filtering and focusing elements with a time-gated, angle-sensitive detection system. The imager computationally reconstructs the position of fluorescent sources within a three-dimensional volume of 3.4 mm × 600 µm × 400 µm.

An Integrated Thermopile-Based Sensor with a Chopper-Stabilized Interface Circuit for Presence Detection

This paper presents a sensor-readout circuit system suitable for presence detection. The sensor consists of a miniaturized polysilicon thermopile, realized employing MEMS micromachining by STMicroelectronics, featuring a responsivity value equal to 180 V/W, with 13 ms response time. The readout circuit is implemented in a standard 130-nm CMOS process. As the sensor output signal behaves substantially as a DC, the interface circuit employs the chopper technique in order to minimize offset and noise contributions at low frequency, achieving a measured input referred offset standard deviation equal to 1.36 μ V. Measurements show that the presented system allows successfully detecting the presence of a person in a room standing at 5.5 m from the sensor. Furthermore, the correct operation of the system with moving targets, considering people either walking or running, was also demonstrated.

"Small is beautiful" in NMR

In this prospective paper we consider the opportunities and challenges of miniaturized nuclear magnetic resonance. As the title suggests, (irreverently borrowing from E.F. Schumacher's famous book), miniaturized NMR will feature a few small windows of opportunity for the analyst. We look at what these are, speculate on some open opportunities, but also comment on the challenges to progress.

Carbon-Nanotube-Based Monolithic CMOS Platform for Electrochemical Detection of Neurotransmitter Glutamate

We present a monolithic biosensor platform, based on carbon-nanotube field-effect transistors (CNTFETs), for the detection of the neurotransmitter glutamate. We used an array of 9'216 CNTFET devices with 96 integrated readout and amplification channels that was realized in complementary metal-oxide semiconductor technology (CMOS). The detection principle is based on amperometry, where electrochemically active hydrogen peroxide, a product of the enzymatic reaction of the target analyte and an enzyme that was covalently bonded to the CNTFET, modulated the conductance of the CNTFET-based sensors. We assessed the performance of the CNTs as enzymatic sensors by evaluating the minimal resolvable concentration change of glutamate in aqueous solutions. The minimal resolvable concentration change amounted to 10 µM of glutamate, which was one of the best values reported for CMOS-based systems so far.

Drug testing complementary metal-oxide-semiconductor chip reveals drug modulation of transmitter release for potential therapeutic applications

Neurodegenerative diseases, such as Parkinson’s disease, Alzheimer’s disease, and Huntington’s disease, are considered incurable and significantly reduce the quality of life of the patients. A variety of drugs that modulate neurotransmitter levels have been used for the treatment of the neurodegenerative diseases but with limited efficacy. In this work, an amperometric complementary metal‐oxide‐semiconductor (CMOS) chip is used for high‐throughput drug testing with respect to the modulation of transmitter release from single vesicles using chromaffin cells prepared from bovine adrenal glands as a model system. Single chromaffin cell amperometry was performed with high efficiency on the surface‐modified CMOS chip and follow‐up whole‐cell patch‐clamp experiments were performed to determine the readily releasable pool sizes. We show that the antidepressant drug bupropion significantly increases the amount of neurotransmitter released in individual quantal release events. The antidepressant drug citalopram accelerates rapid neurotransmitter release following stimulation and follow‐up patch‐clamp experiments reveal that this is because of the increase in the pool of readily releasable vesicles. These results shed light on the mechanisms by which bupropion and citalopram may be potentially effective in the treatment of neurodegenerative diseases. These results demonstrate that the CMOS amperometry chip technology is an excellent tool for drug testing to determine the specific mechanisms by which they modulate neurotransmitter release.

High-Density Electrical Recording and Impedance Imaging With a Multi-Modal CMOS Multi-Electrode Array Chip

Multi-electrode arrays, both active or passive, emerged as ideal technologies to unveil intricated electrophysiological dynamics of cells and tissues. Active MEAs, designed using complementary metal oxide semiconductor technology (CMOS), stand over passive devices thanks to the possibility of achieving single-cell resolution, the reduced electrode size, the reduced crosstalk and the higher functionality and portability. Nevertheless, most of the reported CMOS MEA systems mainly rely on a single operational modality, which strongly hampers the applicability range of a single device. This can be a limiting factor considering that most biological and electrophysiological dynamics are often based on the synergy of multiple and complex mechanisms acting from different angles on the same phenomena. Here, we designed a CMOS MEA chip with 16,384 titanium nitride electrodes, 6 independent operational modalities and 1,024 parallel recording channels for neuro-electrophysiological studies. Sixteen independent active areas are patterned on the chip surface forming a 4 × 4 matrix, each one including 1,024 electrodes. Electrodes of four different sizes are present on the chip surface, ranging from 2.5 × 3.5 μm² up to 11 × 11.0 μm², with 15 μm pitch. In this paper, we exploited the impedance monitoring and voltage recording modalities not only to monitor the growth and development of primary rat hippocampal neurons, but also to assess their electrophysiological activity over time showing a mean spike amplitude of 144.8 ± 84.6 μV. Fixed frequency (1 kHz) and high sampling rate (30 kHz) impedance measurements were used to evaluate the cellular adhesion and growth on the chip surface. Thanks to the high-density configuration of the electrodes, as well as their dimension and pitch, the chip can appreciate the evolutions of the cell culture morphology starting from the moment of the seeding up to mature culture conditions. The measurements were confirmed by fluorescent staining. The effect of the different electrode sizes on the spike amplitudes and noise were also discussed. The multi-modality of the presented CMOS MEA allows for the simultaneous assessment of different physiological properties of the cultured neurons. Therefore, it can pave the way both to answer complex fundamental neuroscience questions as well as to aid the current drug-development paradigm.

Multispectral Depth-Resolved Fluorescence Lifetime Spectroscopy Using SPAD Array Detectors and Fiber Probes

Single Photon Avalanche Diode (SPAD) arrays are increasingly exploited and have demonstrated potential in biochemical and biomedical research, both for imaging and single-point spectroscopy applications. In this study, we explore the application of SPADs together with fiber-optic-based delivery and collection geometry to realize fast and simultaneous single-point time-, spectral-, and depth-resolved fluorescence measurements at 375 nm excitation light. Spectral information is encoded across the columns of the array through grating-based dispersion, while depth information is encoded across the rows thanks to a linear arrangement of probe collecting fibers. The initial characterization and validation were realized against layered fluorescent agarose-based phantoms. To verify the practicality and feasibility of this approach in biological specimens, we measured the fluorescence signature of formalin-fixed rabbit aorta samples derived from an animal model of atherosclerosis. The initial results demonstrate that this detection configuration can report fluorescence spectral and lifetime contrast originating at different depths within the specimens. We believe that our optical scheme, based on SPAD array detectors and fiber-optic probes, constitute a powerful and versatile approach for the deployment of multidimensional fluorescence spectroscopy in clinical applications where information from deeper tissue layers is important for diagnosis.

Towards Integrated Mid-Infrared Gas Sensors

Optical gas sensors play an increasingly important role in many applications. Sensing techniques based on mid-infrared absorption spectroscopy offer excellent stability, selectivity and sensitivity, for numerous possibilities expected for sensors integrated into mobile and wearable devices. Here we review recent progress towards the miniaturization and integration of optical gas sensors, with a focus on low-cost and low-power consumption devices.

Widefield multifrequency fluorescence lifetime imaging using a two-tap complementary metal-oxide semiconductor camera with lateral electric field charge modulators

Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) measures the fluorescence lifetime of entire images in a fast and efficient manner. We report a widefield FD-FLIM system based on a complementary metal-oxide semiconductor camera equipped with two-tap true correlated double sampling lock-in pixels and lateral electric field charge modulators. Owing to the fast intrinsic response and modulation of the camera, our system allows parallel multifrequency FLIM in one measurement via fast Fourier transform. We demonstrate that at a fundamental frequency of 20 MHz, 31-harmonics can be measured with 64 phase images per laser repetition period. As a proof of principle, we analyzed cells transfected with Cerulean and with a construct of Cerulean-Venus that shows Förster Resonance Energy Transfer at different modulation frequencies. We also tracked the temperature change of living cells via the fluorescence lifetime of Rhodamine B at different frequencies. These results indicate that our widefield multifrequency FD-FLIM system is a valuable tool in the biomedical field.

Miniaturization of CMOS

When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

Triple-Junction Optoelectronic Sensor with Nanophotonic Layer Integration for Single-Molecule Level Decoding

Interest in developing a rapid and robust DNA sequencing platform has surged over the past decade. Various next-/third-generation sequencing mechanisms have been employed to replace the traditional Sanger sequencing method. In sequencing by synthesis, a signal is monitored by a scanning charge-coupled device (CCD) to identify thousands to millions of incorporated dNTPs with distinctive fluorophores on a chip. Because one reaction site usually occupies dozens of pixels on a CCD detector, a bottleneck related to the bandwidth of CCD imaging limits the throughputs of the sequencing performance and causes trade-offs among speed, accuracy, read length, and the numbers of reaction sites in parallel. Thus, current research aims to align one reaction site to a few pixels by directly stacking nanophotonic layers onto a CMOS detector to minimize the size of the sequencing platforms and accelerate the processing procedures. This article reports a custom integrated optoelectronic device based on a triple-junction photodiode (TPD) CMOS sensor in conjunction with NPL integration for real-time illumination and detection of fluorescent molecules.

Optimization of a Piezoelectric Energy Harvester and Design of a Charge Pump Converter for CMOS-MEMS Monolithic Integration

The increasing interest in the Internet of Things (IoT) has led to the rapid development of low-power sensors and wireless networks. However, there are still several barriers that make a global deployment of the IoT difficult. One of these issues is the energy dependence, normally limited by the capacitance of the batteries. A promising solution to provide energy autonomy to the IoT nodes is to harvest residual energy from ambient sources, such as motion, vibrations, light, or heat. Mechanical energy can be converted into electrical energy by using piezoelectric transducers. The piezoelectric generators provide an alternating electrical signal that must be rectified and, therefore, needs a power management circuit to adapt the output to the operating voltage of the IoT devices. The bonding and packaging of the different components constitute a large part of the cost of the manufacturing process of microelectromechanical systems (MEMS) and integrated circuits. This could be reduced by using a monolithic integration of the generator together with the circuitry in a single chip. In this work, we report the optimization, fabrication, and characterization of a vibration-driven piezoelectric MEMS energy harvester, and the design and simulation of a charge-pump converter based on a standard complementary metal–oxide–semiconductor (CMOS) technology. Finally, we propose combining MEMS and CMOS technologies to obtain a fully integrated system that includes the piezoelectric generator device and the charge-pump converter circuit without the need of external components. This solution opens new doors to the development of low-cost autonomous smart dust devices.

The Development of CMOS Amperometric Sensing Chip with a Novel 3-Dimensional TiN Nano-Electrode Array

An electrochemical sensing chip with an 8 × 8 array of titanium nitride three-dimensional nano-electrodes (TiN 3D-NEA) was designed and fabricated via a standard integrated complementary metal oxide semiconductor process. Each nano-electrode in 3D-NEA exhibited a pole-like structure with a radius of 100 nm and a height of 35 nm. The numeric simulation showed that the nano-electrode with a radius of around 100 nm exhibited a more uniformly distributed electric field and a much higher electric field magnitude compared to that of the microelectrode. Cyclic voltammetry study with Ru(NH₃)₆³⁺ also revealed that the TiN 3D-NEA exhibited a much higher current density than that obtained from the microelectrode by two orders of magnitude. Further studies showed that the electrocatalytical reduction of hydrogen peroxide (H₂O₂) could occur on a TiN 3D-NEA-based sensing chip with a high sensitivity of 667.2 mA⋅mM⁻¹⋅cm⁻². The linear detection range for H₂O₂ was between 0.1 μM and 5 mM with a lowest detection limit of 0.1 μM. These results indicated that the fabricated TiN 3D-NEA exhibited high catalytic activity and sensitivity to H₂O₂ and could be a promising sensor for H₂O₂ measurement.

Wavelet Denoising of High-Bandwidth Nanopore and Ion-Channel Signals

Recent work has pushed the noise-limited bandwidths of solid-state nanopore conductance recordings to more than 5 MHz and of ion channel conductance recordings to more than 500 kHz through the use of integrated complementary metal-oxide-semiconductor (CMOS) integrated circuits. Despite the spectral spread of the pulse-like signals that characterize these recordings when a sinusoidal basis is employed, Bessel filters are commonly used to denoise these signals to acceptable signal-to-noise ratios (SNRs) at the cost of losing many of the faster temporal features. Here, we report improvements to the SNR that can be achieved using wavelet denoising instead of Bessel filtering. When combined with state-of-the-art high-bandwidth CMOS recording instrumentation, we can reduce baseline noise levels by over a factor of 4 compared to a 2.5 MHz Bessel filter while retaining transient properties in the signal comparable to this filter bandwidth. Similarly, for ion-channel recordings, we achieve a temporal response better than a 100 kHz Bessel filter with a noise level comparable to that achievable with a 25 kHz Bessel filter. Improvements in SNR can be used to achieve robust statistical analyses of these recordings, which may provide important insights into nanopore translocation dynamics and mechanisms of ion-channel function.

Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS⁻MEMS Technology

Microbolometers and photon detectors are two main technologies to address the needs in Infrared Sensing applications. While the microbolometers in both complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technology offer many advantages over photon detectors, they still suffer from nonlinearity and relatively low temperature sensitivity. This paper not only offers a reliable solution to solve the nonlinearity problem but also demonstrate a noticeable potential to build ultra-sensitive CMOS–MEMS temperature sensor for infrared (IR) sensing applications. The possibility of a 31× improvement in the total absolute frequency shift with respect to ambient temperature change is verified via both COMSOL (multiphysics solver) and theory. Nonlinearity problem is resolved by an operating temperature sensor around the beam bending point. The effect of both pull-in force and dimensional change is analyzed in depth, and a drastic increase in performance is achieved when the applied pull-in force between adjacent beams is kept as small as possible. The optimum structure is derived with a length of 57 µm and a thickness of 1 µm while avoiding critical temperature and, consequently, device failure. Moreover, a good match between theory and COMSOL is demonstrated, and this can be used as a guidance to build state-of-the-art designs.

Full-Differential Folded-Cascode Front-End Receiver Amplifier Integrated Circuit for Capacitive Micromachined Ultrasonic Transducers

This paper describes the design of a front-end receiver amplifier for capacitive micromachined ultrasonic transducer (CMUT). The proposed operational amplifier (op amp) consists of a full differential folded-cascode amplifier stage followed by a class AB output stage. A feedback resistor is applied between the input and the output of the op amp to make a transimpedance amplifier. We analyzed the equivalent circuit model of the CMUT element operating in the receiving mode and obtained the static output impedance and center frequency characteristics of the CMUT. The op amp gain, bandwidth, noise, and power consumption trade-offs are discussed in detail. The amplifier was fabricated using GlobalFoundries 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. The open loop gain of the amplifier is approximately 65 dB, and its gain bandwidth product is approximately 29.5 MHz. The measured input reference noise current was 56 nA/√Hz@3 MHz. The amplifier chip area is 325 μm × 150 μm and the op amp is powered by ±3.3 V, the static power consumption is 11 mW. We verified the correct operation of our amplifier with CMUT and echo-pulse shown that the CMUT center frequency is 3 MHz with 92% fractional bandwidth.