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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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2
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Guo Q, Ji D, Wang Q, Peng L, Zhang C, Wu Y, Kong D, Luo S, Liu W, Chen G, Wei D, Liu Y, Wei D. Supercapacitively Liquid-Solid Dual-State Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406345. [PMID: 39246122 DOI: 10.1002/adma.202406345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2024] [Revised: 08/24/2024] [Indexed: 09/10/2024]
Abstract
Photo-transduction of solid-state optoelectronics occurs in semiconductors or their interfaces. Considering the confined active area and interfacial capacitance of solid-state materials, solid-state optoelectronics faces inherent limitations in photo-transduction, especially for bionic vision, and the performance is lower than that of living systems. For example, a photoreceptor generates pA-level photocurrent when absorbing a single photon. Here, a liquid-solid dual-state phototransistor is demonstrated, in which photo-transduction and modulation take place at the microporous interface between semiconductors and water, mimicking principles of the photoreceptor. When operating in the water, an orderly stacked photo-harvesting covalent organic framework layer generates supercapacitively photogating modulation of the channel conductivity via a dual-state interface, achieving responsivity of 4.6 × 1010 A W-1 and detectivity of 1.62 × 1016 Jones at room temperature, several orders of magnitude higher than other photodetectors. Such bio-inspired dual-state optoelectronics enables high-contrast scotopic neuromorphic imaging with responsivity greater than photoreceptors, holding promise for constructing optoelectronic systems with performance beyond conventional solid-state optoelectronics.
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Affiliation(s)
- Qianying Guo
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Daizong Ji
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
- The Institute for Biomedical Engineering & Nano Science, School of Medicine, Tongji University, Shanghai, 200120, China
| | - Qiankun Wang
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Lan Peng
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Cong Zhang
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Yungen Wu
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Derong Kong
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Shi Luo
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Wentao Liu
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Gang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Dapeng Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China
- Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
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3
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You X, Huang CW, Vinodgopal K, Atkin JM. Imaging nanoscale molecular binding in functionalized graphene via tip-enhanced Raman spectroscopy. J Chem Phys 2024; 161:094204. [PMID: 39234970 DOI: 10.1063/5.0222228] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2024] [Accepted: 08/19/2024] [Indexed: 09/06/2024] Open
Abstract
Surface functionalization of low-dimensional nanomaterials offers a means to tailor their optoelectronic and chemical characteristics. However, functionalization reactions are sensitive to the inherent surface features of nanomaterials, such as defects, grain boundaries, and edges. Conventional optical characterization methods, such as Raman spectroscopy, have limited sensitivity and spatial resolution and, therefore, struggle to visualize reaction sites and chemical species. Here, we demonstrate the capability of spatially and chemically sensitive tip-enhanced Raman spectroscopy imaging to map the distribution of molecules in covalently functionalized graphene. Hyperspectral vertex component analysis and density functional theory are necessary to interpret the nature of binding sites and extract information from the spatially and spectrally heterogeneous datasets. Our results clarify the origin of heterogeneous surface functionalization, resolving preferential binding at edges and defects. This work demonstrates the potential of nanospectroscopic tools combined with unsupervised learning to characterize complex, partially ordered optoelectronic nanomaterials.
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Affiliation(s)
- Xiao You
- Department of Applied Physical Science, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, USA
- Department of Engineering, Westlake University, Hangzhou, China
| | - Chiung-Wei Huang
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, USA
| | - Kizhanipuram Vinodgopal
- Department of Chemistry, North Carolina Central University, Durham, North Carolina 27707, USA
| | - Joanna M Atkin
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, USA
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4
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Liu T, Xu T, Li T, Jing Y. Selective CO 2 Reduction over γ-Graphyne Supported Single-Atom Catalysts: Crucial Role of Strain Regulation. J Am Chem Soc 2024; 146:24133-24140. [PMID: 39140784 DOI: 10.1021/jacs.4c08677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
The two-electron CO2 reduction reaction (2e-CO2RR) is the most promising process for realizing industrial utilization of CO2, but it is hindered by the competitive hydrogen evolution reaction (HER) because of the comparable equilibrium potential. Strategies to enhance 2e-CO2RR activity and selectivity by suppressing HER are highly demanded. Inspired by the low in-plane Young's modulus of the recently synthesized γ-graphyne (GY), we propose tensile-strain regulation as an effective method to improve the selectivity of the CO2RR against HER. By means of constant-potential calculations and constrained ab initio molecular dynamics simulations, we demonstrate the good stability and high CO2RR activity of GY-supported Co (Co-GY) single-atom catalysts (SACs). The change in potential of zero charges of *COOH is revealed to be more sensitive to tensile strain than that of *H species on Co-GY SACs, resulting in a slower change of its adsorption energy than that of *H species under working potentials and consequently enhanced CO2RR selectivity toward CO production. Besides, the strain-dependent regulation mechanism also applies to other M-GY SACs, demonstrating strain regulation as an effective strategy for designing and manipulating SACs for the selective 2e-CO2RR.
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Affiliation(s)
- Tianyang Liu
- Jiangsu Co-Innovation Centre of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Tianze Xu
- Jiangsu Co-Innovation Centre of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Tianchun Li
- Jiangsu Co-Innovation Centre of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Yu Jing
- Jiangsu Co-Innovation Centre of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Nanjing Forestry University, Nanjing 210037, China
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5
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Shi E, Li J, Yang M, Ma S, Han J, Li B, Yang C, Luo H, Liu W. Research Status and Challenges of Mechanism, Characterization, Performance Evaluation, and Type of Nano-Pour Point Depressants in Waxy Crude Oil. ACS OMEGA 2024; 9:35256-35274. [PMID: 39184475 PMCID: PMC11339835 DOI: 10.1021/acsomega.4c05243] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/04/2024] [Revised: 07/25/2024] [Accepted: 08/01/2024] [Indexed: 08/27/2024]
Abstract
Nano-Pour point depressants have great potential to improve the low-temperature fluidity of waxy crude oil. This Review reviews the recent research progress of nano-pour point depressants in the field of crude oil pour point reduction. The effect and mechanism of nanocomposite pour point depressants are analyzed; the preparation, modification, and microstructure characterization of nanocomposite pour point depressants are introduced; the three main types of nano-pour point depressants, namely, silicon-based, carbon-based, and magnetic metal-based, are introduced; the results of the current research are outlined; and the challenges of the current research and possible directions of future research are also pointed out. The in-depth analysis of nano-pour point depressants and their potential to improve the low-temperature fluidity of waxy crude oil are reviewed in order to thoroughly analyze the mechanism of nano-pour point depressants and to prepare nano-pour point depressants that are more suitable for reducing crude oil coagulation.
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Affiliation(s)
- Erxiu Shi
- School
of Vehicle and Energy, Yanshan University, Qinhuangdao, Hebei 066004, China
- Gas
Storage Ground Engineering Technology Innovation Center of Hebei, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Jiapei Li
- School
of Vehicle and Energy, Yanshan University, Qinhuangdao, Hebei 066004, China
- Gas
Storage Ground Engineering Technology Innovation Center of Hebei, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Manping Yang
- School
of Vehicle and Energy, Yanshan University, Qinhuangdao, Hebei 066004, China
- Gas
Storage Ground Engineering Technology Innovation Center of Hebei, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Shihui Ma
- School
of Vehicle and Energy, Yanshan University, Qinhuangdao, Hebei 066004, China
- Gas
Storage Ground Engineering Technology Innovation Center of Hebei, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Jiang Han
- School
of Vehicle and Energy, Yanshan University, Qinhuangdao, Hebei 066004, China
- Gas
Storage Ground Engineering Technology Innovation Center of Hebei, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Bingfan Li
- School
of Vehicle and Energy, Yanshan University, Qinhuangdao, Hebei 066004, China
- Gas
Storage Ground Engineering Technology Innovation Center of Hebei, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Chao Yang
- Technology
Inspection Center of Shengli Oilfield, SINOPEC, Dongying, Shandong 257000, China
| | - Haijun Luo
- School
of Petroleum Engineering, Guangdong University
of Petrochemical Technology, Maoming, Guangdong 525000, China
| | - Wei Liu
- Huanqing
Oil Production Plant of PetroChina Yumen Oilfield Branch, Jiuquan, Gansu 735202, China
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Sun L, Chen X, Zhou M, Gao J, Luo C, Li X, You S, Wang M, Cheng G. Optimization of Cyanide-Free Composite Electrodeposition Based on π-π Interactions Preparation of Silver-Graphene Composite Coatings for Electrical Contact Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1349. [PMID: 39195387 DOI: 10.3390/nano14161349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2024] [Revised: 08/02/2024] [Accepted: 08/13/2024] [Indexed: 08/29/2024]
Abstract
With the rapid development of industrial automation and power electronics, the requirements for electrical contact materials are increasing. However, traditional electrical contact materials encountered significant bottlenecks in terms of performance enhancement and production environmental friendliness. Therefore, this paper proposes a new material design idea that utilizes π-π interactions between graphene and compounds with conjugated structures in order to achieve uniform dispersion of graphene in the metal matrix and thus enhance the performance of composites. Based on this design idea, we used nicotinic acid, which has a conjugated structure and is safe, as the complexing agent, and successfully prepared high-quality silver-graphene (Ag-G) composite coatings with graphene uniformly dispersed in the metal matrix on copper substrates by composite electrodeposition technique. Subsequently, the mechanical properties of composite coatings were investigated by hardness test and X-ray diffractometer, and the tribological properties of the composite coatings and the comprehensive performance under the current carrying conditions were systematically evaluated by using friction and wear tester and load key life tester. The results show that the Ag-G composite coatings have significant advantages in mechanical, tribological, and current carrying conditions. This result not only verifies the feasibility of the design idea of the material, but also provides a new direction for the research and development of electrical contact materials.
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Affiliation(s)
- Luyi Sun
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
- Guangxi Earthmoving Machinery Collaborative Innovation Center, Liuzhou 545006, China
- Guangxi Tsinglube New Material Technology Co., Ltd., 279 Feilu Avenue, Luzhai County, Liuzhou 545006, China
| | - Xin Chen
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
- Guangxi Earthmoving Machinery Collaborative Innovation Center, Liuzhou 545006, China
- Guangxi Tsinglube New Material Technology Co., Ltd., 279 Feilu Avenue, Luzhai County, Liuzhou 545006, China
| | - Ming Zhou
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
- Guangxi Earthmoving Machinery Collaborative Innovation Center, Liuzhou 545006, China
- Guangxi Tsinglube New Material Technology Co., Ltd., 279 Feilu Avenue, Luzhai County, Liuzhou 545006, China
| | - Jingwei Gao
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
- Guangxi Earthmoving Machinery Collaborative Innovation Center, Liuzhou 545006, China
- Guangxi Tsinglube New Material Technology Co., Ltd., 279 Feilu Avenue, Luzhai County, Liuzhou 545006, China
| | - Chaogui Luo
- Guangxi Tsinglube New Material Technology Co., Ltd., 279 Feilu Avenue, Luzhai County, Liuzhou 545006, China
- Guangxi Jianxing Guangyin New Material Technology Co., Ltd., Nanning 530024, China
| | - Xiao Li
- Chengdu Carbon Co., Ltd., Chengdu 610100, China
| | - Shengli You
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
| | - Mingyue Wang
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
| | - Gangqiang Cheng
- School of Mechanical and Automotive Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
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7
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Jiang D, Tang YN, Wang D, Xu X, Sun J, Ma R, Li W, Han Z, Liu Y, Wei D. Self-Anchored Van-Der-Waals Stacking Growth of Transition-Metal Dichalcogenide Nanoplates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2407586. [PMID: 39126129 DOI: 10.1002/adma.202407586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2024] [Revised: 07/17/2024] [Indexed: 08/12/2024]
Abstract
Transition-metal dichalcogenide (TMDs) nanoplates exhibit unique properties different from their monolayer counterparts. Controllable nucleation and growth are prerequisite and highly desirable for their practical applications. Here, a self-anchored van-der-Waals stacking growth method is developed, by which the substrate pit induced by precursor etching anchors the source material, impedes the lateral spreading of source droplets and facilitates the in situ stacking growth of high-quality TMD nanoplates with a thickness of tens to hundreds of nanometers at well-defined locations. As such, an array of TMD nanoplates with controlled lateral dimensions are produced and applied in arrayed photodetectors. This study solves the problem of controllable preparation of TMD nanoplates, holding promise for applications in electronics and optoelectronics.
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Affiliation(s)
- Dingding Jiang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Ya-Nan Tang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Di Wang
- Units Semiconductor Technology Co.,Ltd, Nanjing, 210000, China
| | - Xiangpeng Xu
- Units Semiconductor Technology Co.,Ltd, Nanjing, 210000, China
| | - Jiang Sun
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
| | - Rong Ma
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Wenhao Li
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Zhiya Han
- School of Materials, Shanghai Dianji University, Shanghai, 200245, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200433, China
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China
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8
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Li W, Liang F, Sun X, Zheng K, Liu R, Yuan H, Cheng S, Wang J, Cheng Y, Huang K, Wang K, Yang Y, Yang F, Tu C, Mao X, Yin W, Cai A, Wang X, Qi Y, Liu Z. Graphene-skinned alumina fiber fabricated through metalloid-catalytic graphene CVD growth on nonmetallic substrate and its mass production. Nat Commun 2024; 15:6825. [PMID: 39122739 PMCID: PMC11316083 DOI: 10.1038/s41467-024-51118-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Accepted: 07/29/2024] [Indexed: 08/12/2024] Open
Abstract
Graphene growth on widely used dielectrics/insulators via chemical vapor deposition (CVD) is a strategy toward transfer-free applications of CVD graphene for the realization of advanced composite materials. Here, we develop graphene-skinned alumina fibers/fabrics (GAFs/GAFFs) through graphene CVD growth on commercial alumina fibers/fabrics (AFs/AFFs). We reveal a vapor-surface-solid growth model on a non-metallic substrate, which is distinct from the well-established vapor-solid model on conventional non-catalytic non-metallic substrates, but bears a closer resemblance to that observed on catalytic metallic substrates. The metalloid-catalytic growth of graphene on AFs/AFFs resulted in reduced growth temperature (~200 °C lower) and accelerated growth rate (~3.4 times faster) compared to that obtained on a representative non-metallic counterpart, quartz fiber. The fabricated GAFF features a wide-range tunable electrical conductivity (1-15000 Ω sq-1), high tensile strength (>1.5 GPa), lightweight, flexibility, and a hierarchical macrostructure. These attributes are inherited from both graphene and AFF, making GAFF promising for various applications including electrical heating and electromagnetic interference shielding. Beyond laboratory level preparation, the stable mass production of large-scale GAFF has been achieved through a home-made roll-to-roll system with capacity of 468-93600 m2/year depending on product specifications, providing foundations for the subsequent industrialization of this material, enabling its widespread adoption in various industries.
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Affiliation(s)
- Wenjuan Li
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Fushun Liang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Xiucai Sun
- Beijing Graphene Institute (BGI), Beijing, China
| | - Kangyi Zheng
- Beijing Graphene Institute (BGI), Beijing, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, China
| | - Ruojuan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Hao Yuan
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Shuting Cheng
- Beijing Graphene Institute (BGI), Beijing, China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, China
| | - Jingnan Wang
- Beijing Graphene Institute (BGI), Beijing, China
| | - Yi Cheng
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kewen Huang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kun Wang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Yuyao Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Fan Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Ce Tu
- Beijing Graphene Institute (BGI), Beijing, China
| | - Xinyu Mao
- Beijing Graphene Institute (BGI), Beijing, China
| | - Wanjian Yin
- Beijing Graphene Institute (BGI), Beijing, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, China
| | - Ali Cai
- Beijing Graphene Institute (BGI), Beijing, China
| | - Xiaobai Wang
- Department of Chemistry, College of Chemistry and Materials Engineering, Beijing Technology and Business University, Beijing, China
| | - Yue Qi
- Beijing Graphene Institute (BGI), Beijing, China.
| | - Zhongfan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
- Beijing Graphene Institute (BGI), Beijing, China.
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9
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Tene T, Svozilík J, Colcha D, Cevallos Y, Vinueza-Naranjo PG, Vacacela Gomez C, Bellucci S. The Tunable Parameters of Graphene-Based Biosensors. SENSORS (BASEL, SWITZERLAND) 2024; 24:5049. [PMID: 39124094 PMCID: PMC11314989 DOI: 10.3390/s24155049] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2024] [Revised: 07/27/2024] [Accepted: 08/01/2024] [Indexed: 08/12/2024]
Abstract
Graphene-based surface plasmon resonance (SPR) biosensors have emerged as a promising technology for the highly sensitive and accurate detection of biomolecules. This study presents a comprehensive theoretical analysis of graphene-based SPR biosensors, focusing on configurations with single and bimetallic metallic layers. In this study, we investigated the impact of various metallic substrates, including gold and silver, and the number of graphene layers on key performance metrics: sensitivity of detection, detection accuracy, and quality factor. Our findings reveal that configurations with graphene first supported on gold exhibit superior performance, with sensitivity of detection enhancements up to 30% for ten graphene layers. In contrast, silver-supported configurations, while demonstrating high sensitivity, face challenges in maintaining detection accuracy. Additionally, reducing the thickness of metallic layers by 30% optimizes light coupling and enhances sensor performance. These insights highlight the significant potential of graphene-based SPR biosensors in achieving high sensitivity of detection and reliability, paving the way for their application in diverse biosensing technologies. Our findings pretend to motivate future research focusing on optimizing metallic layer thickness, improving the stability of silver-supported configurations, and experimentally validating the theoretical findings to further advance the development of high-performance SPR biosensors.
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Affiliation(s)
- Talia Tene
- Department of Chemistry, Universidad Técnica Particular de Loja, Loja 110160, Ecuador
| | - Jiří Svozilík
- Facultad de Ciencias, Escuela Superior Politécnica de Chimborazo (ESPOCH), Riobamba 060155, Ecuador
| | - Dennys Colcha
- UNICARIBE Research Center, University of Calabria, 87036 Rende, Italy
| | - Yesenia Cevallos
- College of Engineering, Universidad Nacional de Chimborazo, Riobamba 060108, Ecuador
- Universidad San Francisco de Quito IMNE, Diego de Robles s/n, Cumbayá, Quito 170901, Ecuador
| | | | | | - Stefano Bellucci
- INFN-Laboratori Nazionali di Frascati, Via E. Fermi 54, 00044 Frascati, Italy
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10
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Liu C, Wang XZ, Shen C, Ma LP, Yang XQ, Kong Y, Ma W, Liang Y, Feng S, Wang XY, Wei YN, Zhu X, Li B, Li CZ, Dong SC, Zhang LN, Ren WC, Sun DM, Cheng HM. A hot-emitter transistor based on stimulated emission of heated carriers. Nature 2024; 632:782-787. [PMID: 39143208 PMCID: PMC11338824 DOI: 10.1038/s41586-024-07785-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 07/04/2024] [Indexed: 08/16/2024]
Abstract
Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies1-5. However, the traditional mechanisms of hot-carrier generation are either carrier injection6-11 or acceleration12,13, which limit device performance in terms of power consumption and negative differential resistance14-17. Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18-21. Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era.
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Affiliation(s)
- Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.
| | - Xin-Zhe Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Cong Shen
- School of Electronic and Computer Engineering, Peking University, Shenzhen, China
| | - Lai-Peng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Xu-Qi Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Yue Kong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Yan Liang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Xiao-Yue Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Yu-Ning Wei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Xi Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Chang-Ze Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Shi-Chao Dong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Li-Ning Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen, China.
| | - Wen-Cai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, People's Republic of China
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11
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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12
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Souibgui M, Ajlani H, Cavanna A, Madouri A, Oueslati M, Meftah A. Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs. J Chem Phys 2024; 161:044701. [PMID: 39037147 DOI: 10.1063/5.0211838] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Accepted: 07/08/2024] [Indexed: 07/23/2024] Open
Abstract
Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition (CVD) on high-quality copper and subsequently transferred onto SiO2 and on n-GaAs substrates with varying doping electron concentrations (n = 1016, 1017, 5 × 1017, 1018, and 5 × 1018 cm-3). The n-GaAs substrates were grown by molecular beam epitaxy. The optical properties of the SLG were investigated through photoluminescence (PL) and Raman spectroscopy measurements. Carrier concentration n or p and Fermi energy (EF) values in SLG were determined both before and after the transfer onto n-GaAs, and these findings were validated through PL studies. The Raman spectroscopy results indicated an increase in the transfer of electrons from n-GaAs to SLG as the doping electron density in n-GaAs increased. PL analysis revealed a significant change in the bandgap energy (Eg) of n-GaAs due to bandgap narrowing and the Burstein-Moss shift. Our data enable us to determine the energy band diagrams. Upon aligning the energy bands, an increase in transferred carrier density is accompanied by changes in Fermi energies and an increase in the potential barrier (∆U). The increase in ∆U is of significant interest to ensure that charges are directed more efficiently toward the cell's electrical contacts in the case of photovoltaic application. There, they can contribute significantly to the generated electric current, thereby enhancing the performance of a cell. Our results can provide insights into the interaction in graphene-based heterostructures and aid in selecting the best parameters for developing new advanced devices.
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Affiliation(s)
- M Souibgui
- Institute of Macromolecular Chemistry, v.v.i., Academy of Sciences of the Czech Republic, Heyrovsky Sq. 2, 162 06 Prague 6, Czech Republic
- Laboratory Nanomaterials Nanotechnology and Energy-Faculty of Science of Tunis, University of Tunis El Manar, 2092 El Manar, Tunis, Tunisia
| | - H Ajlani
- Laboratory Nanomaterials Nanotechnology and Energy-Faculty of Science of Tunis, University of Tunis El Manar, 2092 El Manar, Tunis, Tunisia
| | - A Cavanna
- CNRS/C2N, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - A Madouri
- CNRS/C2N, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - M Oueslati
- Laboratory Nanomaterials Nanotechnology and Energy-Faculty of Science of Tunis, University of Tunis El Manar, 2092 El Manar, Tunis, Tunisia
| | - A Meftah
- Laboratory Nanomaterials Nanotechnology and Energy-Faculty of Science of Tunis, University of Tunis El Manar, 2092 El Manar, Tunis, Tunisia
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13
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Li A, Zeiger PM, He Z, Xu M, Pennycook SJ, Rusz J, Zhou W. Systematic Absences of Optical Phonon Modes in Phonon Dispersion Measured by Electron Microscopy. PHYSICAL REVIEW LETTERS 2024; 133:046101. [PMID: 39121401 DOI: 10.1103/physrevlett.133.046101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Accepted: 06/10/2024] [Indexed: 08/11/2024]
Abstract
Phonon dispersion relations are widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across several Brillouin zones (BZs) using momentum-resolved vibrational spectroscopy and find that the optical phonon signals vanish at the Γ points with indices (hk0) satisfying h+2k=3n (n denoted integers). Theoretical analysis reveals that the observed phenomena arise from the complete destructive interference of the scattered waves from different basis atoms. This observation, corroborated by the study of diamond, should be a general characteristic of materials composed of symmetrically equivalent pairs of the same elements. Moreover, our results emphasize the importance of multiple scattering in interpreting the vibrational signals in bulk materials. We demonstrate that the systematic absences and dynamic effects, which have not been much appreciated before, offer new insights into the experimental assessment of local vibrational properties of materials.
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14
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Wang H, Randeniya M, Houston A, Duscher G, Gu G. Ultraclean Suspended Graphene by Radiolysis of Adsorbed Water. NANO LETTERS 2024; 24:8866-8871. [PMID: 38976330 DOI: 10.1021/acs.nanolett.4c01440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/10/2024]
Abstract
Access to intrinsic properties of a 2D material is challenging due to the absence of a bulk that would dominate over surface contamination, and this lack of bulk also precludes effective conventional cleaning methods that are almost always sacrificial. Suspended graphene and carbon contaminants represent the most salient challenge. This work has achieved ultraclean graphene, attested by electron energy loss (EEL) spectra unprecedentedly exhibiting fine-structure features expected from bonding and band structure. In the cleaning process in a transmission electron microscope, radicals generated by radiolysis of intentionally adsorbed water remove organic contaminants, which would otherwise be feedstock of the notorious electron irradiation induced carbon deposition. This method can be readily adapted to other experimental settings and other materials to enable previously inhibited undertakings that rely on the intrinsic properties or ultimate thinness of 2D materials. Importantly, the method is surprisingly simple and robust, easily implementable with common lab equipment.
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Affiliation(s)
- Hao Wang
- Min H. Kao Department of Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, Tennessee 37916, United States
| | - Milinda Randeniya
- Department of Physics & Astronomy, The University of Tennessee, Knoxville, Tennessee 37916, United States
| | - Austin Houston
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37916, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37916, United States
| | - Gong Gu
- Min H. Kao Department of Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, Tennessee 37916, United States
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15
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Guo L, Wu N, Zhang S, Zeng H, Yang J, Han X, Duan H, Liu Y, Wang L. Emerging Advances around Nanofluidic Transport and Mass Separation under Confinement in Atomically Thin Nanoporous Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404087. [PMID: 39031097 DOI: 10.1002/smll.202404087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Revised: 07/07/2024] [Indexed: 07/22/2024]
Abstract
Membrane separation stands as an environmentally friendly, high permeance and selectivity, low energy demand process that deserves scientific investigation and industrialization. To address intensive demand, seeking appropriate membrane materials to surpass trade-off between permeability and selectivity and improve stability is on the schedule. 2D materials offer transformational opportunities and a revolutionary platform for researching membrane separation process. Especially, the atomically thin graphene with controllable porosity and structure, as well as unique properties, is widely considered as a candidate for membrane materials aiming to provide extreme stability, exponentially large selectivity combined with high permeability. Currently, it has shown promising opportunities to develop separation membranes to tackle bottlenecks of traditional membranes, and it has been of great interest for tremendously versatile applications such as separation, energy harvesting, and sensing. In this review, starting from transport mechanisms of separation, the material selection bank is narrowed down to nanoporous graphene. The study presents an enlightening overview of very recent developments in the preparation of atomically thin nanoporous graphene and correlates surface properties of such 2D nanoporous materials to their performance in critical separation applications. Finally, challenges related to modulation and manufacturing as well as potential avenues for performance improvements are also pointed out.
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Affiliation(s)
- Liping Guo
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Ningran Wu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Shengping Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Haiou Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Jing Yang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Xiao Han
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Hongwei Duan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
| | - Yuancheng Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Luda Wang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
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16
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Dong M, Sun Y, Dunstan DJ, Young RJ, Papageorgiou DG. Mechanical reinforcement from two-dimensional nanofillers: model, bulk and hybrid polymer nanocomposites. NANOSCALE 2024; 16:13247-13299. [PMID: 38940686 DOI: 10.1039/d4nr01356e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Thanks to their intrinsic properties, multifunctionality and unique geometrical features, two-dimensional nanomaterials have been used widely as reinforcements in polymer nanocomposites. The effective mechanical reinforcement of polymers is, however, a multifaceted problem as it depends not only on the intrinsic properties of the fillers and the matrix, but also upon a number of other important parameters. These parameters include the processing method, the interfacial properties, the aspect ratio, defects, orientation, agglomeration and volume fraction of the fillers. In this review, we summarize recent advances in the mechanical reinforcement of polymer nanocomposites from two-dimensional nanofillers with an emphasis on the mechanisms of reinforcement. Model, bulk and hybrid polymer nanocomposites are reviewed comprehensively. The use of Raman and photoluminescence spectroscopies is examined in light of the distinctive information they can yield upon stress transfer at interfaces. It is shown that the very diverse family of 2D nanofillers includes a number of materials that can attribute distrinctive features to a polymeric matrix, and we focus on the mechanical properties of both graphene and some of the most important 2D materials beyond graphene, including boron nitride, molybdenum disulphide, other transition metal dichalcogenides, MXenes and black phosphorous. In the first part of the review we evaluate the mechanical properties of 2D nanoplatelets in "model" nanocomposites. Next we examine how the performance of these materials can be optimised in bulk nanocomposites. Finally, combinations of these 2D nanofillers with other 2D nanomaterials or with nanofillers of other dimensions are assessed thoroughly, as such combinations can lead to additive or even synergistic mechanical effects. Existing unsolved problems and future perspectives are discussed.
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Affiliation(s)
- Ming Dong
- School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK.
| | - Yiwei Sun
- School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK.
| | - David J Dunstan
- School of Physics and Chemical Sciences, Queen Mary University of London, London E1 4NS, UK
| | - Robert J Young
- National Graphene Institute, Department of Materials, School of Natural Sciences, The University of Manchester, Manchester M13 9PL, UK.
| | - Dimitrios G Papageorgiou
- School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK.
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17
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Lyu P, Wang Z, Guo N, Su J, Li J, Qi D, Xi S, Lin H, Zhang Q, Pennycook SJ, Chen J, Zhao X, Zhang C, Loh KP, Lu J. Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer. J Am Chem Soc 2024. [PMID: 39021150 DOI: 10.1021/jacs.4c02160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/20/2024]
Abstract
The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.
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Affiliation(s)
- Pin Lyu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- State Key Laboratory of Mechanics and Control of Mechanical Structures and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Ziying Wang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Na Guo
- Chongqing Research Institute, National University of Singapore, Chongqing 401123, China
- Department of Physics, Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Jie Su
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jing Li
- Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, China
| | - Dongchen Qi
- Centre for Materials Science, School of Chemistry and Physics, Queensland University of Technology, Brisbane, Queensland 4001, Australia
| | - Shibo Xi
- Institute of Chemical and Engineering Sciences, Singapore, 627833, Singapore
| | - Huihui Lin
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Qihan Zhang
- Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Stephen J Pennycook
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Jingsheng Chen
- Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Chun Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing 401123, China
- Department of Physics, Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
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18
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Du Z, Yu F, Wang J, Li J, Wang X, Qian A. Catalytic effects of graphene structures on Pt/graphene catalysts. RSC Adv 2024; 14:22486-22496. [PMID: 39015668 PMCID: PMC11251395 DOI: 10.1039/d4ra02841d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2024] [Accepted: 06/25/2024] [Indexed: 07/18/2024] Open
Abstract
Pt/C catalysts have been considered the ideal cathodic catalyst for proton exchange membrane fuel cells (PEMFCs) due to their superior oxygen reduction reaction (ORR) catalytic activity at low temperatures. However, oxidation and corrosion of the carbon black support at the cathode result in the agglomeration of Pt particles, which reduces the active sites in the Pt/C catalyst. Graphene supports have shown great promise to address this issue, and therefore, finding out the main structural features of the graphene support is of great significance for guiding the rational construction of graphene-based Pt (Pt/graphene) catalysts for optimized ORR catalysts. In order to systematically study the influence of the structural features of the graphene support on the electro-catalytic properties of Pt/graphene catalysts, we prepared porous nitrogen-doped reduced graphene oxide (P-NRGO), nitrogen-doped reduced graphene oxide (NRGO), treated P-NRGO (TP-NRGO) and reduced graphene oxide (RGO) with different nitrogen species contents (7.76, 7.54, 3.24, and 0.14 at%), oxygen species contents (18.68, 18.12, 6.34 and 21.12 at%), specific surface areas (370.4, 70.6, 347.7 and 276.2 m2 g-1) and pore volumes (1.366, 0.1424, 1.3299 and 1.0414 cm3 g-1). The ORR activity of the four Pt/graphene catalysts when listed in the order of their half-wave potentials (E 1/2) and peak power densities was found to be as Pt/P-NRGO > Pt/NRGO > Pt/TP-NRGO > Pt/RGO. The long-term durability of Pt/P-NRGO for the operation of H2-air PEMFCs is better than that of commercial Pt/C catalysts. The excellent ORR catalytic performance of Pt/P-NRGO compared to that of the other three Pt/graphene catalysts is ascribed to the high nitrogen species content of P-NRGO that can facilitate the uniform dispersion of Pt particles and provide accessible active sites for ORR. The results indicate that the specific surface area (SSA) and heteroatom dopants have strong influence on the Pt particle size, and that the nitrogen species of graphene supports play a more important role than the oxygen species, specific surface area and pore volume for the Pt/graphene catalysts in providing accessible active sites.
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Affiliation(s)
- Zhenzhen Du
- AECC Beijing Institute of Aeronautical Materials Beijing 100095 China
- Beijing Institute of Graphene Technology Beijing 100094 China
| | - Fan Yu
- Beijing Institute of Graphene Technology Beijing 100094 China
| | - Jun Wang
- AECC Beijing Institute of Aeronautical Materials Beijing 100095 China
- Beijing Institute of Graphene Technology Beijing 100094 China
| | - Jiongli Li
- AECC Beijing Institute of Aeronautical Materials Beijing 100095 China
- Beijing Institute of Graphene Technology Beijing 100094 China
| | - Xudong Wang
- AECC Beijing Institute of Aeronautical Materials Beijing 100095 China
- Beijing Institute of Graphene Technology Beijing 100094 China
| | - Aniu Qian
- Institute of Resources and Environment Engineering, Shanxi University Taiyuan 030006 China
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19
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Yin XT, You EM, Zhou RY, Zhu LH, Wang WW, Li KX, Wu DY, Gu Y, Li JF, Mao BW, Yan JW. Unraveling the energy storage mechanism in graphene-based nonaqueous electrochemical capacitors by gap-enhanced Raman spectroscopy. Nat Commun 2024; 15:5624. [PMID: 38965231 PMCID: PMC11224393 DOI: 10.1038/s41467-024-49973-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Accepted: 06/26/2024] [Indexed: 07/06/2024] Open
Abstract
Graphene has been extensively utilized as an electrode material for nonaqueous electrochemical capacitors. However, a comprehensive understanding of the charging mechanism and ion arrangement at the graphene/electrolyte interface remain elusive. Herein, a gap-enhanced Raman spectroscopic strategy is designed to characterize the dynamic interfacial process of graphene with an adjustable number of layers, which is based on synergistic enhancement of localized surface plasmons from shell-isolated nanoparticles and a metal substrate. By employing such a strategy combined with complementary characterization techniques, we study the potential-dependent configuration of adsorbed ions and capacitance curves for graphene based on the number of layers. As the number of layers increases, the properties of graphene transform from a metalloid nature to graphite-like behavior. The charging mechanism shifts from co-ion desorption in single-layer graphene to ion exchange domination in few-layer graphene. The increase in area specific capacitance from 64 to 145 µF cm-2 is attributed to the influence on ion packing, thereby impacting the electrochemical performance. Furthermore, the potential-dependent coordination structure of lithium bis(fluorosulfonyl) imide in tetraglyme ([Li(G4)][FSI]) at graphene/electrolyte interface is revealed. This work adds to the understanding of graphene interfaces with distinct properties, offering insights for optimization of electrochemical capacitors.
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Affiliation(s)
- Xiao-Ting Yin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - En-Ming You
- School of Ocean Information Engineering, Fujian Provincial Key Laboratory of Oceanic Information Perception and Intelligent Processing, Jimei University, Xiamen, China
| | - Ru-Yu Zhou
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Li-Hong Zhu
- Department of Electronic Science, Xiamen University, Xiamen, China
| | - Wei-Wei Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Kai-Xuan Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - De-Yin Wu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Yu Gu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China.
| | - Jian-Feng Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China.
| | - Bing-Wei Mao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China
| | - Jia-Wei Yan
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, China.
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20
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Ding X, He Z, Li J, Xu X, Li Z. Carbon carrier-based rapid Joule heating technology: a review on the preparation and applications of functional nanomaterials. NANOSCALE 2024; 16:12309-12328. [PMID: 38874095 DOI: 10.1039/d4nr01510j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Compared to conventional heating techniques, the carbon carrier-based rapid Joule heating (CJH) method is a new class of technologies that offer significantly higher heating rates and ultra-high temperatures. Over the past few decades, CJH technology has spawned several techniques with similar principles for different application scenarios, including ultra-fast high temperature sintering (UHS), carbon thermal shock (CTS), and flash Joule heating (FJH), which have been widely used in material preparation research studies. Functional nanomaterials are a popular direction of research today, mainly including nanometallic materials, nanosilica materials, nanoceramic materials and nanocarbon materials. These materials exhibit unique physical, chemical, and biological properties, including a high specific surface area, strength, thermal stability, and biocompatibility, making them ideal for diverse applications across various fields. The CJH method is a remarkable approach to producing functional nanomaterials that has attracted attention for its significant advantages. This paper aims to delve into the fundamental principles of CJH and elucidate the efficient preparation of functional nanomaterials with superior properties using this technique. The paper is organized into three sections, each dedicated to introducing the process and characteristics of CJH technology for the preparation of three distinct material types: carbon-based nanomaterials, inorganic non-metallic materials, and metallic materials. We discuss the distinctions and merits of the CJH method compared to alternative techniques in the preparation of these materials, along with a thorough examination of their properties. Furthermore, the potential applications of these materials are highlighted. In conclusion, this paper concludes with a discussion on the future research trends and development prospects of CJH technology.
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Affiliation(s)
- Xinrui Ding
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China.
| | - Zihan He
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China.
| | - Jiasheng Li
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China.
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd, Foshan 528000, China
| | - Xiaolin Xu
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China.
| | - Zongtao Li
- National & Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou 510641, China.
- Guangdong Provincial Key Laboratory of Semiconductor Micro Display, Foshan Nationstar Optoelectronics Company Ltd, Foshan 528000, China
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21
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Liu C, Liu T, Zhang Z, Sun Z, Zhang G, Wang E, Liu K. Understanding epitaxial growth of two-dimensional materials and their homostructures. NATURE NANOTECHNOLOGY 2024; 19:907-918. [PMID: 38987649 DOI: 10.1038/s41565-024-01704-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 05/22/2024] [Indexed: 07/12/2024]
Abstract
The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.
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Affiliation(s)
- Can Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Tianyao Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Quantum Technology Finland Centre of Excellence, Aalto University, Espoo, Finland
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Enge Wang
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
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22
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Shang M, Bu S, Hu Z, Zhao Y, Liao J, Zheng C, Liu W, Lu Q, Li F, Wu H, Shi Z, Zhu Y, Xu Z, Guo B, Yu B, Li C, Zhang X, Xie Q, Yin J, Jia K, Peng H, Lin L, Liu Z. Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402000. [PMID: 38738693 DOI: 10.1002/adma.202402000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/21/2024] [Indexed: 05/14/2024]
Abstract
The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11 000 cm2 V-1 s-1), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance.
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Affiliation(s)
- Mingpeng Shang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yixuan Zhao
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Junhao Liao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chunyang Zheng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Wenlin Liu
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Qi Lu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Fangfang Li
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhuofeng Shi
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, P. R. China
| | - Yaqi Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, P. R. China
| | - Zhiying Xu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao, 266100, P. R. China
| | - Bingbing Guo
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Beiming Yu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Chunhu Li
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao, 266100, P. R. China
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, P. R. China
| | - Qin Xie
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jianbo Yin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Hailin Peng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Li Lin
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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23
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Hu B, Yuan H, Chen G. Enhancement of Thermal Management Performance of Copper Foil Using Additive-Free Graphene Coating. Polymers (Basel) 2024; 16:1872. [PMID: 39000727 PMCID: PMC11244482 DOI: 10.3390/polym16131872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2024] [Revised: 06/25/2024] [Accepted: 06/28/2024] [Indexed: 07/17/2024] Open
Abstract
Advanced thermal interface materials with high thermal conductivity are crucial for addressing the heat dissipation issue in high-power, highly integrated electronic devices. One great potential way in this field is to take advantage of cooling copper foil (Cu) materials based on graphene (G). However, the current manufacturing of these cooling copper foil materials is accompanied by high cost, process complexity, and environmental problems, which limit their development and application. In this work, a simple, low-cost, environmentally friendly graphene-copper foil composite film (rGO/G-Cu) with high thermal conductivity was successfully prepared using graphene oxide directly as a dispersant and binder of graphene coating. The microstructure characterization, thermal conductivity and thermal management performance tests were carried out on the composite films. The results demonstrate that compared to pure copper foil (342.47 W·m-1·K-1) and 10% PVA/G-Cu (367.98 W·m-1·K-1) with polyvinyl alcohol as a binder, 10% rGO/G-Cu exhibits better thermal conductivity (414.56 W·m-1·K-1). The introduction of two-dimensional graphene oxide effectively enhances the adhesion between the coating and the copper foil while greatly improving its thermal conductivity. Furthermore, experimental results indicate that rGO/G-Cu exhibits excellent heat transfer performance and flexibility. This work is highly relevant to the development of economical and environmentally friendly materials with high thermal conductivity to meet the increasing demand for heat dissipation.
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Affiliation(s)
| | | | - Guohua Chen
- College Materials Science and Engineering, Huaqiao University, 668 Jimei Blvd, Xiamen 361000, China; (B.H.); (H.Y.)
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24
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Wang K, Choyal S, Schultz JF, McKenzie J, Li L, Liu X, Jiang N. Borophene: Synthesis, Chemistry, and Electronic Properties. Chempluschem 2024:e202400333. [PMID: 39031807 DOI: 10.1002/cplu.202400333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2024] [Revised: 06/18/2024] [Accepted: 06/19/2024] [Indexed: 07/22/2024]
Abstract
As a neighbor of carbon in the periodic table, boron exhibits versatile structural and electronic configurations, with its allotropes predicted to possess intriguing structures and properties. Since the experimental realization of two-dimensional (2D) boron sheets (borophene) on Ag(111) substrates in 2015, the experimental study of the realization and characteristics of borophene has drawn increasing interest. In this review, we summarize the synthesis and properties of borophene, which are mainly based on experimental results. First, the synthesis of borophene on different substrates, as well as borophane and bilayer borophene, featuring unique phases and properties, are discussed. Next, the chemistry of borophene, such as oxidation, hydrogenation, and its integration into heterostructures with other materials, is summarized. We also mention a few works focused on the physical properties of borophene, specifically its electronic properties. Lastly, the brief outlook addresses challenges toward practical applications of borophene and possible solutions.
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Affiliation(s)
- Kai Wang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Shilpa Choyal
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Jeremy F Schultz
- Nanoscale Device Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - James McKenzie
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Linfei Li
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Xiaolong Liu
- Department of Physics & Astronomy, University of Notre Dame, Notre Dame, IN 46556, USA
- Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, IN 46556, USA
| | - Nan Jiang
- Department of Chemistry, University of Illinois Chicago, Chicago, IL 60607, USA
- Department of Physics, University of Illinois Chicago, Chicago, IL 60607, USA
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25
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Cabral RLB, Galvão ERVP, Fechine PBA, Galvão FMF, do Nascimento JHO. A minireview on the utilization of petroleum coke as a precursor for carbon-based nanomaterials (CNMs): perspectives and potential applications. RSC Adv 2024; 14:19953-19968. [PMID: 38903671 PMCID: PMC11189030 DOI: 10.1039/d4ra01196a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Accepted: 06/07/2024] [Indexed: 06/22/2024] Open
Abstract
The remarkable properties of carbon-based nanomaterials (CNMs) have stimulated a significant increase in studies on different 0D, 1D and 2D nanostructures, which have promising applications in various fields of science and technology. However, the use of graphite as a raw material, which is essential for their production, limits the scalability of these nanostructures. In this context, petroleum coke (PC), a by-product of the coking process in petrochemical industry with a high carbon content (>80 wt%), is emerging as an attractive and low-cost option for the synthesis of carbonaceous nanostructures. This brief review presents recent research related to the use of PC as a precursor for CNMs, such as graphene and its oxidized (GO) and reduced (RGO) variants, among other carbon-based nanostructures. The work highlights the performance of these materials in specific areas of application. In addition, this review describes and analyzes strategies for transforming low-cost, environmentally friendly waste into advanced technological innovations with greater added value, in line with the UN's 2030 Agenda.
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Affiliation(s)
- Rivaldo Leonn Bezerra Cabral
- Postgraduate Program in Chemical Engineering, Center of Technology, Federal University of Rio Grande do Norte CEP 59072970 Natal RN Brazil
| | | | - Pierre Basílio Almeida Fechine
- Advanced Materials Chemistry Group (GQMat), Department of Analytical Chemistry and Physical Chemistry, Federal University of Ceará - UFC Campus do Pici, CP 12100 CEP 60451-970 Fortaleza CE Brazil
| | - Felipe Mendonça Fontes Galvão
- Postgraduate Program in Chemical Engineering, Center of Technology, Federal University of Rio Grande do Norte CEP 59072970 Natal RN Brazil
| | - José Heriberto Oliveira do Nascimento
- Postgraduate Program in Chemical Engineering, Center of Technology, Federal University of Rio Grande do Norte CEP 59072970 Natal RN Brazil
- Postgraduate Program in Textile Engineering, Center of Technology, Federal University of Rio Grande do Norte Natal RN Brazil
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26
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Fratto E, Wang J, Yang Z, Sun H, Gu Z. Site-selective core/shell deposition of tin on multi-segment nanowires for magnetic assembly and soldered interconnection. NANOTECHNOLOGY 2024; 35:355604. [PMID: 38834041 DOI: 10.1088/1361-6528/ad53d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Accepted: 06/04/2024] [Indexed: 06/06/2024]
Abstract
The field of nanotechnology continues to grow with the ongoing discovery and characterization of novel nanomaterials with unconventional size-dependent properties; however, the ability to apply modern manufacturing strategies for practical device design of these nanoscale structures is significantly limited by their small size. Although interconnection has been previously demonstrated between nanoscale components, such approaches often require the use of expensive oxidation-resistant noble metal materials and time-consuming or untargeted strategies for welded interconnection such as laser ablation or plasmonic resonance across randomly oriented component networks. In this work, a three-segment gold-nickel-gold nanowire structure is synthesized using templated electrodeposition and modified via monolayer-directed aqueous chemical reduction of tin solder selectively on the gold segments. This core/shell nanowire structure is capable of directed magnetic assembly tip-to-tip and along substrate pads in network orientation. Upon infrared heating in a flux vapor atmosphere, the solder payload melts and establishes robust and highly conductive wire-wire joints. The targeted solder deposition strategy has been applied to various other multi-segment gold/nickel nanowire configurations and other metallic systems to demonstrate the capability of the approach. This core/shell technique of pre-loading magnetically active nanowires with solder material simplifies the associated challenges of size-dependent component orientation in the manufacture of nanoscale electronic devices.
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Affiliation(s)
- Edward Fratto
- Department of Chemical Engineering, University of Massachusetts Lowell, Lowell, MA 01854, United States of America
| | - Jirui Wang
- Department of Chemical Engineering, University of Massachusetts Lowell, Lowell, MA 01854, United States of America
| | - Zhengyang Yang
- Department of Chemical Engineering, University of Massachusetts Lowell, Lowell, MA 01854, United States of America
| | - Hongwei Sun
- Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, United States of America
| | - Zhiyong Gu
- Department of Chemical Engineering, University of Massachusetts Lowell, Lowell, MA 01854, United States of America
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27
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Wang K, Sun X, Cheng S, Cheng Y, Huang K, Liu R, Yuan H, Li W, Liang F, Yang Y, Yang F, Zheng K, Liang Z, Tu C, Liu M, Ma M, Ge Y, Jian M, Yin W, Qi Y, Liu Z. Multispecies-coadsorption-induced rapid preparation of graphene glass fiber fabric and applications in flexible pressure sensor. Nat Commun 2024; 15:5040. [PMID: 38866786 PMCID: PMC11169262 DOI: 10.1038/s41467-024-48958-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 05/14/2024] [Indexed: 06/14/2024] Open
Abstract
Direct chemical vapor deposition (CVD) growth of graphene on dielectric/insulating materials is a promising strategy for subsequent transfer-free applications of graphene. However, graphene growth on noncatalytic substrates is faced with thorny issues, especially the limited growth rate, which severely hinders mass production and practical applications. Herein, graphene glass fiber fabric (GGFF) is developed by graphene CVD growth on glass fiber fabric. Dichloromethane is applied as a carbon precursor to accelerate graphene growth, which has a low decomposition energy barrier, and more importantly, the produced high-electronegativity Cl radical can enhance adsorption of active carbon species by Cl-CH2 coadsorption and facilitate H detachment from graphene edges. Consequently, the growth rate is increased by ~3 orders of magnitude and carbon utilization by ~960-fold, compared with conventional methane precursor. The advantageous hierarchical conductive configuration of lightweight, flexible GGFF makes it an ultrasensitive pressure sensor for human motion and physiological monitoring, such as pulse and vocal signals.
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Affiliation(s)
- Kun Wang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xiucai Sun
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Shuting Cheng
- Beijing Graphene Institute (BGI), Beijing, China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, China
| | - Yi Cheng
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kewen Huang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Ruojuan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Hao Yuan
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Wenjuan Li
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Fushun Liang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Yuyao Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Fan Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Kangyi Zheng
- Beijing Graphene Institute (BGI), Beijing, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, China
| | - Zhiwei Liang
- Beijing Graphene Institute (BGI), Beijing, China
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Ce Tu
- Beijing Graphene Institute (BGI), Beijing, China
| | - Mengxiong Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Mingyang Ma
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Yunsong Ge
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Muqiang Jian
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, China
| | - Wanjian Yin
- Beijing Graphene Institute (BGI), Beijing, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, China
| | - Yue Qi
- Beijing Graphene Institute (BGI), Beijing, China.
| | - Zhongfan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
- Beijing Graphene Institute (BGI), Beijing, China.
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28
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Othman AM, Kher-Elden MA, Ibraheem F, Hassan MA, Farouk M, Abd El-Fattah ZM. Analogous electronic states in graphene and planer metallic quantum dots. Sci Rep 2024; 14:13471. [PMID: 38866874 PMCID: PMC11169253 DOI: 10.1038/s41598-024-63465-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Accepted: 05/29/2024] [Indexed: 06/14/2024] Open
Abstract
Graphene nanostructures offer wide range of applications due to their distinguished and tunable electronic properties. Recently, atomic and molecular graphene were modeled following simple free-electron scattering by periodic muffin tin potential leading to remarkable agreement with density functional theory. Here we extend the analogy of the π -electronic structures and quantum effects between atomic graphene quantum dots (QDs) and homogeneous planer metallic counterparts of similar size and shape. Specifically, we show that at high binding energies, below the M ¯ -point gap, graphene QDs enclose confined states and standing wave quasiparticle interference patterns analogous to those reported on coinage metal surfaces for nanoscale confining structures such as vacancy islands and quantum corrals. These confined and quantum corral-like states in graphene QDs can be resolved in tomography experiments using angle-resolved photoemission spectroscopy. Likewise, the shape of near-Fermi frontier orbitals in graphene quantum dots can be reproduced from electron confinement within homogeneous metal QDs of identical size and shape. Furthermore, confined states analogous to those found in metallic quantum stadiums can be realized in coupled QDs of graphene for reduced separation. The present study offer a simple fundamental understanding of graphene electronic structures and also open the way towards efficient modeling of novel graphene-based nanostructures.
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Affiliation(s)
- Ahmed M Othman
- Physics Department, Faculty of Science, Al-Azhar University, Nasr City, Cairo, 11884, Egypt.
| | - Mohammad A Kher-Elden
- Physics Department, Faculty of Science, Al-Azhar University, Nasr City, Cairo, 11884, Egypt
| | - Fatma Ibraheem
- Physics Department, Faculty of Science, Al-Azhar University Girls Branch, Nasr City, Cairo, 11753, Egypt
| | - Moukhtar A Hassan
- Physics Department, Faculty of Science, Al-Azhar University, Nasr City, Cairo, 11884, Egypt
| | - Mohammed Farouk
- Physics Department, Faculty of Science, Al-Azhar University, Nasr City, Cairo, 11884, Egypt
| | - Zakaria M Abd El-Fattah
- Physics Department, Faculty of Science, Al-Azhar University, Nasr City, Cairo, 11884, Egypt.
- Physics Department, Faculty of Science, Galala University, New Galala City, Suez, 43511, Egypt.
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29
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Xie X, Ji M, Yan X, Yu Y, Wang Y, Ma N, Xing H, Tian Y. Layer-Controllable "2.5D" DNA Origami Crystals Synthesized by a Hierarchical Assembly Strategy. Angew Chem Int Ed Engl 2024; 63:e202402312. [PMID: 38578652 DOI: 10.1002/anie.202402312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Revised: 03/30/2024] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
The finite periodic arrangement of functional nanomaterials on the two-dimensional scale enables the integration and enhancement of individual properties, making them an important research topic in the field of tuneable nanodevices. Although layer-controllable lattices such as graphene have been successfully synthesized, achieving similar control over colloidal nanoparticles remains a challenge. DNA origami technology has achieved remarkable breakthroughs in programmed nanoparticle assembly. Based on this technology, we proposed a hierarchical assembly strategy to construct a universal DNA origami platform with customized layer properties, which we called 2.5-dimensional (2.5D) DNA origami crystals. Methodologically, this strategy divides the assembly procedure into two steps: 1) array synthesis, and 2) lattice synthesis, which means that the layer properties, including layer number, interlayer distance, and surface morphology, can be flexibly customized based on the independent designs in each step. In practice, these synthesized 2.5D crystals not only pioneer the expansion of the DNA origami crystal library to a wider range of dimensions, but also highlight the technological potential for templating 2.5D colloidal nanomaterial lattices.
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Affiliation(s)
- Xiaolin Xie
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Min Ji
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Xuehui Yan
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yifan Yu
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yong Wang
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Ningning Ma
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Hang Xing
- Institute of Chemical Biology and Nanomedicine, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Provincial Key Laboratory of Biomacromolecular Chemical Biology, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Ye Tian
- College of Engineering and Applied Sciences, State Key Laboratory of Analytical Chemistry for Life Science, National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Chemistry and Biomedicine Innovation Center, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
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30
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Fang Y, Zhou K, Wei W, Zhang J, Sun J. Recent advances in batch production of transfer-free graphene. NANOSCALE 2024; 16:10522-10532. [PMID: 38739019 DOI: 10.1039/d4nr01339e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Large-area transfer-free graphene films prepared via chemical vapor deposition have proved appealing for various applications, with exciting examples in electronics, photonics, and optoelectronics. To achieve their commercialisation, batch production is a prerequisite. Nevertheless, the prevailing scalable synthesis strategies that have been reported are still obstructed by production inefficiencies and non-uniformity. There has also been a lack of reviews in this realm. We present herein a comprehensive and timely summary of recent advances in the batch production of transfer-free graphene. Primary issues and promising approaches for improving the graphene growth rate are first addressed, followed by a discussion of the strategies to guarantee in-plane and batch uniformity for graphene grown on planar plates and wafer-scale substrates, with the design of the target equipment to meet productivity requirements. Finally, potential research directions are outlined, aiming to offer insights into guiding the scalable production of transfer-free graphene.
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Affiliation(s)
- Ye Fang
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
- Beijing Graphene Institute, Beijing 100095, China
| | - Kaixuan Zhou
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
- Beijing Graphene Institute, Beijing 100095, China
| | - Wenze Wei
- Beijing Graphene Institute, Beijing 100095, China
| | - Jincan Zhang
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
| | - Jingyu Sun
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
- Beijing Graphene Institute, Beijing 100095, China
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31
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Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
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Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
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32
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Gotzias A, Lazarou YG. Graphene Exfoliation in Binary NMP/Water Mixtures by Molecular Dynamics Simulations. Chempluschem 2024; 89:e202300758. [PMID: 38314614 DOI: 10.1002/cplu.202300758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Revised: 02/01/2024] [Accepted: 02/02/2024] [Indexed: 02/06/2024]
Abstract
We investigate the molecular mechanism underlying the liquid-phase exfoliation of graphene in aqueous/N-methyl-2-pyrrolidone (NMP) solvent mixtures and calculate the associated free energies, considering different NMP concentrations and exfoliation temperatures. We employ steered molecular dynamics to establish a path for the exfoliation of a graphene sheet from graphite within each solvent environment. Then, we conduct umbrella sampling simulations throughout the created paths to compute the potential of mean force (PMF) of the graphene sheet. As the exfoliated nanosheet disperses into the liquid, it becomes fully covered by an adsorbed solvent monolayer. We analyze the composition of the monolayer by measuring the direct contacts of either NMP or water molecules with the carbon surface. The carbon surface exhibits a preference for adsorbing NMP over water. The NMP molecules form a hydrophobic compact monolayer structure, effectively protecting the carbon interface from unfavorable interactions with water. The creation of the hydrophobic monolayer is a key factor in the exfoliation process, as it effectively inhibits the restacking of exfoliated nanosheets. An adequate level of graphene solubility is achieved through the addition of 20 % to 30 % water by weight to the NMP solvent. This finding holds significant importance for improving production efficiency and reducing dependence on organic solvents in the industrial manufacturing of graphene.
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Affiliation(s)
- A Gotzias
- Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Athens, Greece
| | - Y G Lazarou
- Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Athens, Greece
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33
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Liu S, Ren F, Dong X, Zheng D, Niu Y, Jiao L, Tu W, Gan Z, Wang H. Graphene-enhanced lateral photovoltaic effect observed in the Ag nanoparticle-covered graphene/n-type silicon. OPTICS LETTERS 2024; 49:3126-3129. [PMID: 38824344 DOI: 10.1364/ol.524723] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 05/13/2024] [Indexed: 06/03/2024]
Abstract
Graphene is a kind of two-dimensional material with a single-layer carbon structure and has been investigated in many high-performance photodetectors. The lateral photovoltaic effect (LPE) is widely used in the position-sensitive detectors (PSDs) owing to its linear response of photovoltage to the light position. In this Letter, a type of graphene-enhanced LPE is observed in the Ag nanoparticle-covered graphene/n-type Si. The LPE sensitivity can reach 97.3 mV/mm, much higher than the sensitivity of 1.3 mV/mm in the control sample of Ag/Si and 5.2 mV/mm of graphene/Si. Based on the photocarriers' diffusion mechanism, tailoring a photocarrier transfer at the interface of a heterojunction plays a key role for the enhancement. These findings exhibit great application potential of graphene in the field of PSDs and offer an effective method for the optimization of LPE devices.
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34
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Amontree J, Yan X, DiMarco CS, Levesque PL, Adel T, Pack J, Holbrook M, Cupo C, Wang Z, Sun D, Biacchi AJ, Wilson-Stokes CE, Watanabe K, Taniguchi T, Dean CR, Hight Walker AR, Barmak K, Martel R, Hone J. Reproducible graphene synthesis by oxygen-free chemical vapour deposition. Nature 2024; 630:636-642. [PMID: 38811732 DOI: 10.1038/s41586-024-07454-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 04/22/2024] [Indexed: 05/31/2024]
Abstract
Chemical vapour deposition (CVD) synthesis of graphene on copper has been broadly adopted since the first demonstration of this process1. However, widespread use of CVD-grown graphene for basic science and applications has been hindered by challenges with reproducibility2 and quality3. Here we identify trace oxygen as a key factor determining the growth trajectory and quality for graphene grown by low-pressure CVD. Oxygen-free chemical vapour deposition (OF-CVD) synthesis is fast and highly reproducible, with kinetics that can be described by a compact model, whereas adding trace oxygen leads to suppressed nucleation and slower/incomplete growth. Oxygen affects graphene quality as assessed by surface contamination, emergence of the Raman D peak and decrease in electrical conductivity. Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak. After dry transfer and boron nitride encapsulation, it shows room-temperature electrical-transport behaviour close to that of exfoliated graphene. A graphite-gated device shows well-developed integer and fractional quantum Hall effects. By highlighting the importance of eliminating trace oxygen, this work provides guidance for future CVD system design and operation. The increased reproducibility and quality afforded by OF-CVD synthesis will broadly influence basic research and applications of graphene.
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Affiliation(s)
- Jacob Amontree
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Xingzhou Yan
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | | | - Pierre L Levesque
- Infinite Potential Laboratories, Waterloo, Ontario, Canada
- Département de Chimie, Université de Montréal, Montréal, Quebec, Canada
- Institut Courtois, Université de Montréal, Montréal, Quebec, Canada
| | - Tehseen Adel
- Quantum Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA
| | - Jordan Pack
- Department of Physics, Columbia University, New York, NY, USA
| | | | - Christian Cupo
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Zhiying Wang
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Dihao Sun
- Department of Physics, Columbia University, New York, NY, USA
| | - Adam J Biacchi
- Nanoscale Device Characterization Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA
| | - Charlezetta E Wilson-Stokes
- Quantum Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA
- Department of Mechanical Engineering, Howard University, Washington, DC, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Cory R Dean
- Department of Physics, Columbia University, New York, NY, USA
| | - Angela R Hight Walker
- Quantum Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA.
| | - Richard Martel
- Département de Chimie, Université de Montréal, Montréal, Quebec, Canada.
- Institut Courtois, Université de Montréal, Montréal, Quebec, Canada.
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA.
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35
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Nanayakkara TR, Wijewardena UK, Kriisa A, Mani RG. Study of graphene p-n junctions formed by the electrostatic modification of the SiO 2 substrate. Sci Rep 2024; 14:12154. [PMID: 38802375 PMCID: PMC11130296 DOI: 10.1038/s41598-024-61683-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Accepted: 05/08/2024] [Indexed: 05/29/2024] Open
Abstract
We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO2/Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction.
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Affiliation(s)
- Tharanga R Nanayakkara
- Georgia State University, Atlanta, GA, 30303, USA
- Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - U Kushan Wijewardena
- Georgia State University, Atlanta, GA, 30303, USA
- Georgia College and State University, Milledgeville, GA, 31061, USA
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36
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Ryu H, Kim H, Jeong JH, Kim BC, Watanabe K, Taniguchi T, Lee GH. Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb 2O 3 for 2D Electronics. ACS NANO 2024; 18:13098-13105. [PMID: 38703120 DOI: 10.1021/acsnano.4c01883] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2024]
Abstract
Two-dimensional (2D) semiconducting materials have attracted significant interest as promising candidates for channel materials owing to their high mobility and gate tunability at atomic-layer thickness. However, the development of 2D electronics is impeded due to the difficulty in formation of high-quality dielectrics with a clean and nondestructive interface. Here, we report the direct van der Waals epitaxial growth of a molecular crystal dielectric, Sb2O3, on 2D materials by physical vapor deposition. The grown Sb2O3 nanosheets showed epitaxial relations of 0 and 180° with the 2D template, maintaining high crystallinity and an ultrasharp vdW interface with the 2D materials. As a result, the Sb2O3 nanosheets exhibited a high breakdown field of 18.6 MV/cm for 2L Sb2O3 with a thickness of 1.3 nm and a very low leakage current of 2.47 × 10-7 A/cm2 for 3L Sb2O3 with a thickness of 1.96 nm. We also observed two types of grain boundaries (GBs) with misorientation angles of 0 and 60°. The 0°-GB with a well-stitched boundary showed higher electrical and thermal stabilities than those of the 60°-GB with a disordered boundary. Our work demonstrates a method to epitaxially grow molecular crystal dielectrics on 2D materials without causing any damage, a requirement for high-performance 2D electronics.
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Affiliation(s)
- Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyunjun Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jae Hwan Jeong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Byeong Chan Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
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Rein V, Gao H, Heenen HH, Sghaier W, Manikas AC, Tsakonas C, Saedi M, Margraf JT, Galiotis C, Renaud G, Konovalov OV, Groot IMN, Reuter K, Jankowski M. Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Deposition. ACS NANO 2024; 18:12503-12511. [PMID: 38688475 PMCID: PMC11100484 DOI: 10.1021/acsnano.4c02070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 03/22/2024] [Accepted: 04/01/2024] [Indexed: 05/02/2024]
Abstract
In recent years, liquid metal catalysts have emerged as a compelling choice for the controllable, large-scale, and high-quality synthesis of two-dimensional materials. At present, there is little mechanistic understanding of the intricate catalytic process, though, of its governing factors or what renders it superior to growth at the corresponding solid catalysts. Here, we report on a combined experimental and computational study of the kinetics of graphene growth during chemical vapor deposition on a liquid copper catalyst. By monitoring the growing graphene flakes in real time using in situ radiation-mode optical microscopy, we explore the growth morphology and kinetics over a wide range of CH4-to-H2 pressure ratios and deposition temperatures. Constant growth rates of the flakes' radius indicate a growth mode limited by precursor attachment, whereas methane-flux-dependent flake shapes point to limited precursor availability. Large-scale free energy simulations enabled by an efficient machine-learning moment tensor potential trained to density functional theory data provide quantitative barriers for key atomic-scale growth processes. The wealth of experimental and theoretical data can be consistently combined into a microkinetic model that reveals mixed growth kinetics that, in contrast to the situation at solid Cu, is partly controlled by precursor attachment alongside precursor availability. Key mechanistic aspects that directly point toward the improved graphene quality are a largely suppressed carbon dimer attachment due to the facile incorporation of this precursor species into the liquid surface and a low-barrier ring-opening process that self-heals 5-membered rings resulting from remaining dimer attachments.
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Affiliation(s)
- Valentina Rein
- ESRF
− The European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble, France
| | - Hao Gao
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4−6, 14195 Berlin, Germany
| | - Hendrik H. Heenen
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4−6, 14195 Berlin, Germany
| | - Wissal Sghaier
- University
of Grenoble Alpes and CEA, IRIG/MEM/NRS, 38000 Grenoble, France
| | - Anastasios C. Manikas
- FORTH/ICE-HT
and Department of Chemical Engineering, University of Patras, 26504 Patras, Greece
| | - Christos Tsakonas
- FORTH/ICE-HT
and Department of Chemical Engineering, University of Patras, 26504 Patras, Greece
| | - Mehdi Saedi
- Leiden Institute
of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
- Physics
Department, Shahid Beheshti University, Evin, Tehran, 1983969411, Iran
| | - Johannes T. Margraf
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4−6, 14195 Berlin, Germany
- University
of Bayreuth, Bavarian Center
for Battery Technology (BayBatt), Weiherstraße 26, 95448 Bayreuth, Germany
| | - Costas Galiotis
- FORTH/ICE-HT
and Department of Chemical Engineering, University of Patras, 26504 Patras, Greece
| | - Gilles Renaud
- University
of Grenoble Alpes and CEA, IRIG/MEM/NRS, 38000 Grenoble, France
| | - Oleg V. Konovalov
- ESRF
− The European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble, France
| | - Irene M. N. Groot
- Leiden Institute
of Chemistry, Leiden University, P.O. Box 9502, 2300 RA Leiden, The Netherlands
| | - Karsten Reuter
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, Faradayweg 4−6, 14195 Berlin, Germany
| | - Maciej Jankowski
- ESRF
− The European Synchrotron, 71 Avenue des Martyrs, 38043 Grenoble, France
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38
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Bianco GV, Sacchetti A, Milella A, Giangregorio MM, Dicorato S, Bruno G. Defect healing and doping of CVD graphene by thermal sulfurization. NANOSCALE ADVANCES 2024; 6:2629-2635. [PMID: 38752145 PMCID: PMC11093272 DOI: 10.1039/d4na00124a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 04/06/2024] [Indexed: 05/18/2024]
Abstract
CVD graphene layers are intrinsically polycrystalline; depending on grain size, their structure at the atomic level is scarcely free of defects, which affects the properties of graphene. On the one hand, atomic-scale defects act as scattering centers and lead to a loss of carrier mobility. On the other hand, structural disorder at grain boundaries provides additional resistance in series that affects material conductivity. Graphene chemical functionalization has been demonstrated to be an effective way to improve its conductivity mainly by increasing carrier concentration. The present study reports the healing effects of sulfur doping on the electrical transport properties of single-layer CVD graphene. A post-growth thermal sulfurization process operating at 250 °C is applied on single layers of graphene on Corning-glass and Si/SiO2 substrates. XPS and Raman analyses reveal the covalent attachment of sulfur atoms in graphene carbon lattice without creating new C-sp3 defects. Measurements of transport properties show a significant improvement in hole mobility as revealed by Hall measurements and related material conductivity. Typically, Hall mobility values as high as 2500 cm2 V-1 s-1 and sheet resistance as low as 400 Ohm per square are measured on single-layer sulfurized graphene.
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Affiliation(s)
- Giuseppe Valerio Bianco
- Institute of Nanotechnology, CNR-NANOTEC, Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy +39-0805442082
| | - Alberto Sacchetti
- Institute of Nanotechnology, CNR-NANOTEC, Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy +39-0805442082
| | - Antonella Milella
- Institute of Nanotechnology, CNR-NANOTEC, Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy +39-0805442082
- Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy
| | - Maria Michela Giangregorio
- Institute of Nanotechnology, CNR-NANOTEC, Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy +39-0805442082
| | - Stefano Dicorato
- Institute of Nanotechnology, CNR-NANOTEC, Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy +39-0805442082
| | - Giovanni Bruno
- Institute of Nanotechnology, CNR-NANOTEC, Dipartimento di Chimica, Università di Bari via Orabona, 4 Bari 70126 Italy +39-0805442082
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39
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Zhou Z, Zhao K, Chi HY, Shen Y, Song S, Hsu KJ, Chevalier M, Shi W, Agrawal KV. Electrochemical-repaired porous graphene membranes for precise ion-ion separation. Nat Commun 2024; 15:4006. [PMID: 38740849 DOI: 10.1038/s41467-024-48419-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 04/26/2024] [Indexed: 05/16/2024] Open
Abstract
The preparation of atom-thick porous lattice hosting Å-scale pores is attractive to achieve a large ion-ion selectivity in combination with a large ion flux. Graphene film is an ideal selective layer for this if high-precision pores can be incorporated, however, it is challenging to avoid larger non-selective pores at the tail-end of the pore size distribution which reduces ion-ion selectivity. Herein, we develop a strategy to overcome this challenge using an electrochemical repair strategy that successfully masks larger pores in large-area graphene. 10-nm-thick electropolymerized conjugated microporous polymer (CMP) layer is successfully deposited on graphene, thanks to a strong π-π interaction in these two materials. While the CMP layer itself is not selective, it effectively masks graphene pores, leading to a large Li+/Mg2+ selectivity from zero-dimensional pores reaching 300 with a high Li+ ion permeation rate surpassing the performance of reported materials for ion-ion separation. Overall, this scalable repair strategy enables the fabrication of monolayer graphene membranes with customizable pore sizes, limiting the contribution of nonselective pores, and offering graphene membranes a versatile platform for a broad spectrum of challenging separations.
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Affiliation(s)
- Zongyao Zhou
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
- State Key Laboratory of Urban Water Resource and Environment, School of Environment, Harbin Institute of Technology, Harbin, 150090, P. R. China
| | - Kangning Zhao
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
| | - Heng-Yu Chi
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
| | - Yueqing Shen
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
| | - Shuqing Song
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
| | - Kuang-Jung Hsu
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
| | - Mojtaba Chevalier
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland
| | - Wenxiong Shi
- Institute for New Energy Materials and Low Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300387, P. R. China
| | - Kumar Varoon Agrawal
- Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), Sion, CH-1950, Switzerland.
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40
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Liu H, Zhao J, Ly TH. Clean Transfer of Two-Dimensional Materials: A Comprehensive Review. ACS NANO 2024; 18:11573-11597. [PMID: 38655635 DOI: 10.1021/acsnano.4c01000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.
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Affiliation(s)
- Haijun Liu
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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41
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Xiao D, He P, Zheng H, Yang S, Yang S, Ding G. A Tape-Wrapping Strategy towards Electrochemical Fabrication of Water-Dispersible Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:805. [PMID: 38727399 PMCID: PMC11085361 DOI: 10.3390/nano14090805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2024] [Revised: 04/23/2024] [Accepted: 04/28/2024] [Indexed: 05/12/2024]
Abstract
Graphene has achieved mass production via various preparative routes and demonstrated its uniqueness in many application fields for its intrinsically high electron mobility and thermal conductivity. However, graphene faces limitations in assembling macroscopic structures because of its hydrophobic property. Therefore, balancing high crystal quality and good aqueous dispersibility is of great importance in practical applications. Herein, we propose a tape-wrapping strategy to electrochemically fabricate water-dispersible graphene (w-Gr) with both excellent dispersibility (~4.5 mg/mL, stable over 2 months), and well-preserved crystalline structure. A large production rate (4.5 mg/min, six times faster than previous electrochemical methods), high yield (65.4% ≤5 atomic layers) and good processability are demonstrated. A mechanism investigation indicates that the rational design of anode configuration to ensure proper oxidation, deep exfoliation and unobstructed mass transfer is responsible for the high efficiency of this strategy. This simple yet efficient electrochemical method is expected to promote the scalable preparation and applications of graphene.
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Affiliation(s)
- Deyue Xiao
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (D.X.); (H.Z.); (S.Y.); (S.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng He
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (D.X.); (H.Z.); (S.Y.); (S.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haolong Zheng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (D.X.); (H.Z.); (S.Y.); (S.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shujing Yang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (D.X.); (H.Z.); (S.Y.); (S.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Siwei Yang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (D.X.); (H.Z.); (S.Y.); (S.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guqiao Ding
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China; (D.X.); (H.Z.); (S.Y.); (S.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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42
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Qing F, Guo X, Hou Y, Ning C, Wang Q, Li X. Toward the Production of Super Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310678. [PMID: 38708801 DOI: 10.1002/smll.202310678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 04/10/2024] [Indexed: 05/07/2024]
Abstract
The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.
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Affiliation(s)
- Fangzhu Qing
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
| | - Xiaomeng Guo
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuting Hou
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Congcong Ning
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Qisong Wang
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xuesong Li
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
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43
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Ahmad MA, Kumar P, Mech BC, Kumar J. Trade-off analysis between g m/I D and f T of GNR-FETs with single-gate and double-gate device structure. Sci Rep 2024; 14:10218. [PMID: 38702353 PMCID: PMC11068727 DOI: 10.1038/s41598-024-59908-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Accepted: 04/16/2024] [Indexed: 05/06/2024] Open
Abstract
This study examines the operational parameters of field-effect transistors (FETs) using single-gate (SG) and double-gate (DG) graphene nanoribbons (GNRs) within the analog/RF domain. A detailed exploration is conducted through an atomistic pz orbital model, derived from the Hamiltonian of graphene nanoribbons, employing the nonequilibrium Green's function formalism (NEGF) for analysis. The atomic characteristics of the GNRFETs channel are accurately described by utilizing a tight-binding Hamiltonian with an atomistic pz orbital basis set. The primary focus of the analysis revolves around essential analog/RF parameters such as transconductance, transconductance generation factor (TGF), output resistance, early voltage, intrinsic gain, gate capacitance, cut-off frequency, and transit time. Furthermore, the study assesses the gain frequency product (GFP), transfer frequency product (TFP), and gain transfer frequency product (GTFP) to evaluate the balance between transistor efficiency, gain, and cut-off frequency. The research outcomes indicate that double-gate GNRFETs exhibit superior analog/RF performance in comparison to their single-gate counterparts. However, both types of devices demonstrate cut-off frequencies in the gigahertz range. The extensive data presented in this study provides valuable insights into the characteristics of SG and DG GNRFETs, particularly in terms of the figure-of-merit (FoM) for analog/RF performance, offering a comprehensive analysis of the trade-offs in analog applications. In addition, the analysis has been extended be performing a high-performance hybrid 6T static random-access memory (SRAM) to get the impact in their circuit level variation as well as improvement in their circuit performance.
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Affiliation(s)
- Md Akram Ahmad
- Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, 826004, India.
| | - Pankaj Kumar
- Department of Electronics and Communication Engineering, Graphic Era University, Dehradun, 248002, India
| | - Bhubon Chandra Mech
- Department of Electronics Engineering, Defence Institute of Advanced Technology, Pune, 411025, India
| | - Jitendra Kumar
- Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, 826004, India
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Yu S, He J, Zhang Z, Sun Z, Xie M, Xu Y, Bie X, Li Q, Zhang Y, Sevilla M, Titirici MM, Zhou H. Towards Negative Emissions: Hydrothermal Carbonization of Biomass for Sustainable Carbon Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307412. [PMID: 38251820 DOI: 10.1002/adma.202307412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 01/02/2024] [Indexed: 01/23/2024]
Abstract
The contemporary production of carbon materials heavily relies on fossil fuels, contributing significantly to the greenhouse effect. Biomass is a carbon-neutral resource whose organic carbon is formed from atmospheric CO2. Employing biomass as a precursor for synthetic carbon materials can fix atmospheric CO2 into solid materials, achieving negative carbon emissions. Hydrothermal carbonization (HTC) presents an attractive method for converting biomass into carbon materials, by which biomass can be transformed into materials with favorable properties in a distinct hydrothermal environment, and these carbon materials have made extensive progress in many fields. However, the HTC of biomass is a complex and interdisciplinary problem, involving simultaneously the physical properties of the underlying biomass and sub/supercritical water, the chemical mechanisms of hydrothermal synthesis, diverse applications of resulting carbon materials, and the sustainability of the entire technological routes. This review starts with the analysis of biomass composition and distinctive characteristics of the hydrothermal environment. Then, the factors influencing the HTC of biomass, the reaction mechanism, and the properties of resulting carbon materials are discussed in depth, especially the different formation mechanisms of primary and secondary hydrochars. Furthermore, the application and sustainability of biomass-derived carbon materials are summarized, and some insights into future directions are provided.
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Affiliation(s)
- Shijie Yu
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Jiangkai He
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Zhien Zhang
- William G. Lowrie Department of Chemical and Biomolecular Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Zhuohua Sun
- Beijing Key Laboratory of Lignocellulosic Chemistry, Beijing Forestry University, Beijing, 100083, P.R. China
| | - Mengyin Xie
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Yongqing Xu
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Xuan Bie
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Qinghai Li
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Yanguo Zhang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
| | - Marta Sevilla
- Instituto de Ciencia y Tecnología del Carbono (INCAR), CSIC, Francisco Pintado Fe 26, Oviedo, 33011, Spain
| | | | - Hui Zhou
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing, 100084, P.R. China
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45
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Park WY, Han J, Moon J, Joo SH, Wada T, Ichikawa Y, Ogawa K, Kim HS, Chen M, Kato H. Mechanically Robust Self-Organized Crack-Free Nanocellular Graphene with Outstanding Electrochemical Properties in Sodium Ion Battery. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311792. [PMID: 38336362 DOI: 10.1002/adma.202311792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 01/26/2024] [Indexed: 02/12/2024]
Abstract
Crack-free nanocellular graphenes are attractive materials with extraordinary mechanical and electrochemical properties, but their homogeneous synthesis on the centimeter scale is challenging. Here, a strong nanocellular graphene film achieved by the self-organization of carbon atoms using liquid metal dealloying and employing a defect-free amorphous precursor is reported. This study demonstrates that a Bi melt strongly catalyzes the self-structuring of graphene layers at low processing temperatures. The robust nanoarchitectured graphene displays a high-genus seamless framework and exhibits remarkable tensile strength (34.8 MPa) and high electrical conductivity (1.6 × 104 S m-1). This unique material has excellent potential for flexible and high-rate sodium-ion battery applications.
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Affiliation(s)
- Wong-Young Park
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan
| | - Jiuhui Han
- Tianjin Key Laboratory of Advanced Functional Porous Materials, Institute for New Energy Materials and Low-Carbon Technologies, Tianjin University of Technology, 391 Binshui West Road, Tianjin, 300384, China
- Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, 6-3 Aoba, Sendai, 980-8578, Japan
| | - Jongun Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang, 37673, Republic of Korea
- Division of Advanced Materials Engineering, Center for Advanced Powder Materials and Parts, Kongju National University, 1223-24 Cheonan-daero, Cheonan, 31080, Republic of Korea
| | - Soo-Hyun Joo
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan
- Department of Materials Science and Engineering, Dankook University, 119 Dandae-ro, Cheonan, 31116, Republic of Korea
| | - Takeshi Wada
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan
| | - Yuji Ichikawa
- Fracture and Reliability Research Institute (FRI), Tohoku University, 6-6-11 Aoba, Sendai, 980-8579, Japan
| | - Kazuhiro Ogawa
- Fracture and Reliability Research Institute (FRI), Tohoku University, 6-6-11 Aoba, Sendai, 980-8579, Japan
| | - Hyoung Seop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang, 37673, Republic of Korea
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan
- Institute for Convergence Research and Education in Advanced Technology, Yonsei University, Yonsei-ro 50, Seoul, 03722, Republic of Korea
| | - Mingwei Chen
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles Street, Baltimore, MD, 21218-2681, USA
| | - Hidemi Kato
- Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai, 980-8577, Japan
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Zhu Y, Shi Z, Zhao Y, Bu S, Hu Z, Liao J, Lu Q, Zhou C, Guo B, Shang M, Li F, Xu Z, Zhang J, Xie Q, Li C, Sun P, Mao B, Zhang X, Liu Z, Lin L. Recent trends in the transfer of graphene films. NANOSCALE 2024; 16:7862-7873. [PMID: 38568087 DOI: 10.1039/d3nr05626k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Recent years have witnessed advances in chemical vapor deposition growth of graphene films on metal foils with fine scalability and thickness controllability. However, challenges for obtaining wrinkle-free, defect-free and large-area uniformity remain to be tackled. In addition, the real commercial applications of graphene films still require industrially compatible transfer techniques with reliable performance of transferred graphene, excellent production capacity, and suitable cost. Transferred graphene films, particularly with a large area, still suffer from the presence of transfer-related cracks, wrinkles and contaminants, which would strongly deteriorate the quality and uniformity of transferred graphene films. Potential applications of graphene films include moisture barrier films, transparent conductive films, electromagnetic shielding films, and optical communications; such applications call different requirements for the performance of transferred graphene, which, in turn, determine the suitable transfer techniques. Besides the reliable transfer process, automatic machines should be well developed for the future batch transfer of graphene films, ensuring the repeatability and scalability. This mini-review provides a summary of recent advances in the transfer of graphene films and offers a perspective for future directions of transfer techniques that are compatible for industrial batch transfer.
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Affiliation(s)
- Yaqi Zhu
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Zhuofeng Shi
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Yixuan Zhao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
| | - Zhaoning Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Junhao Liao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qi Lu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, P. R. China
| | - Chaofan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Bingbing Guo
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Mingpeng Shang
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Fangfang Li
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Zhiying Xu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Jialin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Qin Xie
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Chunhu Li
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Pengzhan Sun
- Institute of Applied Physics and Materials, Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, P.R. China
| | - Boyang Mao
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, U.K
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
| | - Zhongfan Liu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
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Rathinam Thiruppathi Venkadajapathy V, Sivaperumal S. Tailoring functional two-dimensional nanohybrids: A comprehensive approach for enhancing photocatalytic remediation. ECOTOXICOLOGY AND ENVIRONMENTAL SAFETY 2024; 275:116221. [PMID: 38547728 DOI: 10.1016/j.ecoenv.2024.116221] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 02/07/2024] [Accepted: 03/14/2024] [Indexed: 04/12/2024]
Abstract
Photocatalysis is gaining prominence as a viable alternative to conventional biohazard treatment technologies. Two-dimensional (2D) nanomaterials have become crucial for fabricating novel photocatalysts due to their nanosheet architectures, large surface areas, and remarkable physicochemical properties. Furthermore, a variety of applications are possible with 2D nanomaterials, either in combination with other functional nanoparticles or by utilizing their inherent properties. Henceforth, the review commences its exploration into the synthesis of these materials, delving into their inherent properties and assessing their biocompatibility. Subsequently, an overview of mechanisms involved in the photocatalytic degradation of pollutants and the processes related to antimicrobial action is presented. As an integral part of our review, we conduct a systematic analysis of existing challenges and various types of 2D nanohybrid materials tailored for applications in the photocatalytic degradation of contaminants and the inactivation of pathogens through photocatalysis. This investigation will aid to contribute to the formulation of decision-making criteria and design principles for the next generation of 2D nanohybrid materials. Additionally, it is crucial to emphasize that further research is imperative for advancing our understanding of 2D nanohybrid materials.
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48
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Wang H, Li Z, Liu X, Jia S, Gao Y, Li M. Rapid Silicification of a DNA Origami with Shape Fidelity. ACS APPLIED BIO MATERIALS 2024; 7:2511-2518. [PMID: 38512069 DOI: 10.1021/acsabm.4c00124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/22/2024]
Abstract
High-fidelity patterning of DNA origami nanostructures on various interfaces holds great potential for nanoelectronics and nanophotonics. However, distortion of a DNA origami often occurs due to the strong interface interactions, e.g., on two-dimensional (2D) materials. In this study, we discovered that the adsorption of silica precursors in rapid silicification can prevent the distortion caused by graphene and generates a high shape-fidelity DNA origami-silica composite on a graphene interface. We found that an incubation time of 1 min and silicification time of 16 h resulted in the formation of DNA origami-silica composites with the highest shape fidelity of 99%. By comparing the distortion of the DNA origami on the graphene interface with and without silicification, we observed that rapid silicification effectively preserved the integrity of the DNA origami. Statistical analysis of scanning electron microscopy data indicates that compared to bare DNA origami, the DNA origami-silica composite has an increased shape fidelity by more than two folds. Furthermore, molecular dynamics simulations revealed that rapid silicification effectively suppresses the distortion of the DNA origami through the interhelical insertion of silica precursors. Our strategy provides a simple yet effective solution to maintain the shape-fidelity DNA origami on interfaces that have strong interaction with DNA molecules, expanding the applicable interfaces for patterning 2D DNA origamis.
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Affiliation(s)
- Haozhi Wang
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhangjiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Ziyu Li
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhangjiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiaoguo Liu
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhangjiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Sisi Jia
- Zhangjiang Laboratory, Shanghai 201210, China
| | - Yanjing Gao
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhangjiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Mingqiang Li
- School of Chemistry and Chemical Engineering, New Cornerstone Science Laboratory, Frontiers Science Center for Transformative Molecules, Zhangjiang Institute for Advanced Study and National Center for Translational Medicine, Shanghai Jiao Tong University, Shanghai 200240, China
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Bhattacharjee S, Banerjee A, Chattopadhyay KK. Comparative first principles investigation on the structural, optoelectronic and vibrational properties of strain-engineered graphene-like AlC 3, BC 3and C 3N monolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:265701. [PMID: 38513293 DOI: 10.1088/1361-648x/ad36a1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Accepted: 03/21/2024] [Indexed: 03/23/2024]
Abstract
Three cardinal two-dimensional semiconductorsviz., AlC3, BC3and C3N, closely resembling the graphene structure, are intriguing contenders for emerging optoelectronic and thermomechanical applications. Starting from a critical stability analysis, this density functional theory study delves into a quantitative assessment of structural, mechanical, electronic, optical, vibrational and thermodynamical properties of these monolayers as a function of biaxial strain(ε)in a sublinear regime(-2%⩽ε⩽4%)of elastic deformation. The structures with cohesive energies slightly smaller than graphene, manifest exceptional mechanical stiffness, flexibility and breaking stress. The mechanical parameters have been deployed to further cultivate acoustic attributes and thermal conductivity. The hexagonal structures with mixed ionic-covalent molecular bonds have indirect electronic band-gap and work-function acutely sensitive toε. Dispersions of optical dielectric function, energy loss, refractive index, extinction coefficient, reflectivity, absorption coefficient and conductivity are deciphered in the UV-Vis-NIR regime against strain, where particular frequency bands featuring high polarization, dissipation, absorbance or reflectance are identified. Phonon band-structure and density of states testify dynamic stability in the ground state for all systems except the compressed ones. A comprehensive group theoretical analysis is performed to cultivate rotational; infrared and Raman-active modes, and the nature of molecular vibrations is delineated. The red-shifting of phonon bands andE2g/A1gRaman peaks with increasingε, associates estimation of Grüneisen parameter. Finally, strain-induced alterations of thermodynamic quantities such as entropy, enthalpy, free energy, heat capacity and Debye temperature are studied, followed by a molecular dynamics-based stability assessment under canonical ensemble.
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Affiliation(s)
| | - Anibrata Banerjee
- School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032, India
| | - Kalyan Kumar Chattopadhyay
- Department of Physics, Jadavpur University, Kolkata 700 032, India
- School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032, India
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50
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Chen Z, Zhang Y, Zhao C, Xia Y, Li Z, Zhou X, Xiao L, Liu X, Zhang Y. Tailoring Graphite into Subnanometer Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310022. [PMID: 38088447 DOI: 10.1002/adma.202310022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Revised: 12/01/2023] [Indexed: 01/13/2024]
Abstract
Within the intersection of materials science and nanoscience/technology, extremely downsized (including quantum-sized and subnanometer-sized) materials attract increasing interest. However, the effective and controllable production of extremely downsized materials through physical strategies remains a great challenge. Herein, an all-physical top-down method for the production of sub-1 nm graphene with completely broken lattice is reported. The graphene subnanometer materials (GSNs) with monolayer structures and lateral sizes of ≈0.5 nm are obtained. Compared with their bulk, nanosheets, and quantum sheets, the intrinsic GSNs present extremely enhanced photoluminescence and nonlinear saturation absorption performances, as well as unique carrier behavior. The non-equilibrium states induced by the entirely exposed and broken, intrinsic lattices in sub-1 nm graphene can be determinative to their extreme performances. This work shows the great potential of broken lattice and provides new insights toward subnanometer materials.
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Affiliation(s)
- Zhexue Chen
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yutong Zhang
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Ce Zhao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuexing Xia
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Zhangqiang Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xuanping Zhou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liuyang Xiao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xinfeng Liu
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Yong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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