Atomic Layer Deposition: An Overview

Can We Rationally Design and Operate Spatial Atomic Layer Deposition Systems for Steering the Growth Regime of Thin Films?

Fine control over the growth of materials is required to precisely tailor their properties. Spatial atomic layer deposition (SALD) is a thin-film deposition technique that has recently attracted attention because it allows producing thin films with a precise number of deposited layers, while being vacuum-free and much faster than conventional atomic layer deposition. SALD can be used to grow films in the atomic layer deposition or chemical vapor deposition regimes, depending on the extent of precursor intermixing. Precursor intermixing is strongly influenced by the SALD head design and operating conditions, both of which affect film growth in complex ways, making it difficult to predict the growth regime prior to depositions. Here, we used numerical simulation to systematically study how to rationally design and operate SALD systems for growing thin films in different growth regimes. We developed design maps and a predictive equation allowing us to predict the growth regime as a function of the design parameters and operation conditions. The predicted growth regimes match those observed in depositions performed for various conditions. The developed design maps and predictive equation empower researchers in designing, operating, and optimizing SALD systems, while offering a convenient way to screen deposition parameters, prior to experimentation.

Rational Strategy for Space-Confined Atomic Layer Deposition

Atomic layer deposition (ALD) offers excellent controllability of spatial uniformity, film thickness at the Angstrom level, and film composition even for high-aspect-ratio nanostructured surfaces, which are rarely attainable by other conventional deposition methodologies. Although ALD has been successfully applied to various substrates under open-top circumstances, the applicability of ALD to confined spaces has been limited because of the inherent difficulty of supplying precursors into confined spaces. Here, we propose a rational methodology to apply ALD growths to confined spaces (meter-long microtubes with an aspect ratio of up to 10 000). The ALD system, which can generate differential pressures to confined spaces, was newly developed. By using this ALD system, it is possible to deposit TiO_x layers onto the inner surface of capillary tubes with a length of 1000 mm and an inner diameter of 100 μm with spatial deposition uniformity. Furthermore, we show the superior thermal and chemical robustness of TiO_x-coated capillary microtubes for molecular separations when compared to conventional molecule-coated capillary microtubes. Thus, the present rational strategy of space-confined ALD offers a useful approach to design the chemical and physical properties of the inner surfaces of various confined spaces.

Multifunctional Coatings on Sulfide-Based Solid Electrolyte Powders with Enhanced Processability, Stability, and Performance for Solid-State Batteries

Sulfide-based solid-state electrolytes (SSEs) exhibit many tantalizing properties including high ionic conductivity and favorable mechanical properties for next-generation solid-state batteries. Widespread adoption of these materials is hindered by their intrinsic instability under ambient conditions, which makes them difficult to process at scale, and instability at the Li||SSE and cathode||SSE interfaces, which limits cell performance and lifetime. Atomic layer deposition is leveraged to grow thin Al₂ O₃ coatings on Li₆ PS₅ Cl powders to address both issues simultaneously. These coatings can be directly grown onto Li₆ PS₅ Cl particles with negligible chemical modification of the underlying material and enable exposure of powders to pure and H₂ O-saturated oxygen environments for ≥4 h with minimal reactivity, compared with significant degradation of the uncoated powder. Pellets fabricated from coated powders exhibit ionic conductivities up to 2× higher than those made from uncoated material, with a simultaneous decrease in electronic conductivity and significant suppression of chemical reactivity at the Li-SSE interface. These benefits result in significantly improved room temperature cycle life at high capacity and current density. It is hypothesized that this enhanced performance derives from improved intergranular properties and improved Li metal adhesion. This work points to a completely new framework for designing active, stable, and scalable materials for next-generation solid-state batteries.

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.

In-Situ Measurement of Magnetoelectric Coupling and Strain Transfer in Multiferroic Nanocomposites of CoFe2O4 and Hf0.5Zr0.5O2 with Residual Porosity

With increasing applications for voltage-controlled magnetism, the need to more fully understand magnetoelectric coupling and strain transfer in nanostructured multiferroic composites has also increased. Here, multiferroic nanocomposites were synthesized using block copolymer templating to create mesoporous cobalt ferrite (CFO), followed by partly filling the pores with ferroelectric zirconium-substituted hafnia (HZO) using atomic layer deposition (ALD) to produce a porous multiferroic composite with enhanced mechanical flexibility. Upon electrical poling of the nanocomposite, we observed large changes in the magnetization. These changes partly relaxed upon removing the electric field, suggesting a strain-mediated mechanism. Both the anisotropic strain transfer from HZO to CFO and the strain relaxation after the field was removed were confirmed using high-resolution X-ray diffraction measurements collected during in-situ poling. The in-situ observation of both anisotropic strain transfer and large magnetization changes allows us to directly characterize the strong multiferroic coupling that can occur in flexible, nanostructured composites.

Enabling rotary atomic layer deposition for optical applications

Atomic layer deposition (ALD) has been proven as an excellent method for depositing high-quality optical coatings due to its outstanding film quality and precise process control. Unfortunately, batch ALD requires time-consuming purge steps, which leads to low deposition rates and highly time-intensive processes for complex multilayer coatings. Recently, rotary ALD has been proposed for optical applications. In this, to the best of our knowledge, novel concept, each process step takes place in a separate part of the reactor divided by pressure and nitrogen curtains. To be coated, substrates are rotated through these zones. During each rotation, an ALD cycle is completed, and the deposition rate depends primarily on the rotation speed. In this work, the performance of a novel rotary ALD coating tool for optical applications is investigated and characterized with S i O ₂ and T a ₂ O ₅ layers. Low absorption levels of <3.1p p m and <6.0p p m are demonstrated at 1064 nm for around 186.2 nm thick single layers of T a ₂ O ₅ and 1032 nm S i O ₂, respectively. Growth rates up to 0.18 nm/s on fused silica substrates were achieved. Furthermore, excellent non-uniformity is also demonstrated, with values reaching as low as ±0.53% and ±1.07% over an area of 135×60m m for T a ₂ O ₅ and S i O ₂, respectively.

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Solution-based atomic layer deposition (sALD) processes enable the preparation of thin films on nanostructured surfaces while controlling the film thickness down to a monolayer and preserving the homogeneity of the film. In sALD, a similar operation principle as in gas-phase ALD is used, however, with a broader range of accessible materials and without requiring expensive vacuum equipment. In this work, a sALD process was developed to prepare CuSCN on a Si substrate using the precursors CuOAc and LiSCN. The film growth was studied by ex situ atomic force microscopy (AFM), analyzed by a neural network (NN) approach, ellipsometry, and a newly developed in situ infrared (IR) spectroscopy experiment in combination with density functional theory (DFT). In the self-limiting sALD process, CuSCN grows on top of an initially formed two-dimensional (2D) layer as three-dimensional spherical nanoparticles with an average size of ∼25 nm and a narrow particle size distribution. With increasing cycle number, the particle density increases and larger particles form via Ostwald ripening and coalescence. The film grows preferentially in the β-CuSCN phase. Additionally, a small fraction of the α-CuSCN phase and defect sites form.

Engineering Single-Atom Nanozymes for Catalytic Biomedical Applications

Nanomaterials with enzyme-mimicking properties, coined as nanozymes, are a promising alternative to natural enzymes owing to their remarkable advantages, such as high stability, easy preparation, and favorable catalytic performance. Recently, with the rapid development of nanotechnology and characterization techniques, single atom nanozymes (SAzymes) with atomically dispersed active sites, well-defined electronic and geometric structures, tunable coordination environment, and maximum metal atom utilization are developed and exploited. With superior catalytic performance and selectivity, SAzymes have made impressive progress in biomedical applications and are expected to bridge the gap between artificial nanozymes and natural enzymes. Herein, the recent advances in SAzyme preparation methods, catalytic mechanisms, and biomedical applications are systematically summarized. Their biomedical applications in cancer therapy, oxidative stress cytoprotection, antibacterial therapy, and biosensing are discussed in depth. Furthermore, to appreciate these advances, the main challenges, and prospects for the future development of SAzymes are also outlined and highlighted in this review.

Atomic layer deposition of ZnO on polypropylene nonwovens for photocatalytic antibacterial facemasks

Addressing respiratory infectious diseases remains one of the main priorities due to the increased risk of exposure caused by population growth, increasing international travel and commerce, and most recently, the COVID-19 outbreak. In the war against respiratory diseases, facemasks are powerful tools to obstruct the penetration of microorganisms, thereby protecting the wearer from infections. Nonetheless, the intercepted microorganisms on the surface of facemasks may proliferate and lead to secondary infection. To solve this problem, atomic layer deposition is introduced to deposit uniform and mechanically robust ZnO layers on polypropylene (PP) nonwoven fabrics, a widely used raw material in fabricating facemasks. The loading of ZnO demonstrates no adverse effects on the separation performance of facemasks, and the filtration efficiency of the facemasks towards different types of nanoparticles remains higher than 98.9%. Moreover, the modified PP nonwoven fabrics are granted with excellent antibacterial activity and photocatalytic sterilization ability, which can inactivate both germ-negative and germ-positive bacteria (E. coliandS. aureus) effectively with and without light illumination. Therefore, the modified PP nonwoven fabrics are potential candidates to be used as the outer layer on facemasks and endow them with photocatalytic antibacterial activity.

Synthesis of TiO2/Al2O3 Double-Layer Inverse Opal by Thermal and Plasma-Assisted Atomic Layer Deposition for Photocatalytic Applications

In comparison to conventional nano-infiltration approaches, the atomic layer deposition (ALD) technology exhibits greater potential in the fabrication of inverse opals (IOs) for photocatalysts. In this study, TiO₂ IO and ultra-thin films of Al₂O₃ on IO were successfully deposited using thermal or plasma-assisted ALD and vertical layer deposition from a polystyrene (PS) opal template. SEM/EDX, XRD, Raman, TG/DTG/DTA-MS, PL spectroscopy, and UV Vis spectroscopy were used for the characterization of the nanocomposites. The results showed that the highly ordered opal crystal microstructure had a face-centered cubic (FCC) orientation. The proposed annealing temperature efficiently removed the template, leaving the anatase phase IO, which provided a small contraction in the spheres. In comparison to TiO₂/Al₂O₃ plasma ALD, TiO₂/Al₂O₃ thermal ALD has a better interfacial charge interaction of photoexcited electron-hole pairs in the valence band hole to restrain recombination, resulting in a broad spectrum with a peak in the green region. This was demonstrated by PL. Strong absorption bands were also found in the UV regions, including increased absorption due to slow photons and a narrow optical band gap in the visible region. The results from the photocatalytic activity of the samples show decolorization rates of 35.4%, 24.7%, and 14.8%, for TiO₂, TiO₂/Al₂O₃ thermal, and TiO₂/Al₂O₃ plasma IO ALD samples, respectively. Our results showed that ultra-thin amorphous ALD-grown Al₂O₃ layers have considerable photocatalytic activity. The Al₂O₃ thin film grown by thermal ALD has a more ordered structure compared to the one prepared by plasma ALD, which explains its higher photocatalytic activity. The declined photocatalytic activity of the combined layers was observed due to the reduced electron tunneling effect resulting from the thinness of Al₂O₃.

Substantial lifetime enhancement for Si-based photoanodes enabled by amorphous TiO2 coating with improved stoichiometry

Amorphous titanium dioxide (TiO₂) film coating by atomic layer deposition (ALD) is a promising strategy to extend the photoelectrode lifetime to meet the industrial standard for solar fuel generation. To realize this promise, the essential structure-property relationship that dictates the protection lifetime needs to be uncovered. In this work, we reveal that in addition to the imbedded crystalline phase, the presence of residual chlorine (Cl) ligands is detrimental to the silicon (Si) photoanode lifetime. We further demonstrate that post-ALD in-situ water treatment can effectively decouple the ALD reaction completeness from crystallization. The as-processed TiO₂ film has a much lower residual Cl concentration and thus an improved film stoichiometry, while its uniform amorphous phase is well preserved. As a result, the protected Si photoanode exhibits a substantially improved lifetime to ~600 h at a photocurrent density of more than 30 mA/cm². This study demonstrates a significant advancement toward sustainable hydrogen generation.

In situx-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al2O3on SiOx/Si: Interface dipole and persistent surface groups

Atomic layer deposition (ALD) has become an essential technology in many areas. To better develop and use this technology, it is of the pivot to understand the surface chemistry during the ALD film growth. The growth of an ALD oxide film may also induce an electric dipole at the interface, which may be further tuned to modulate the flat band voltage for electronic device applications. To understand the associated surface chemistry and interface dipole formation process, we herein employ anin situx-ray photoelectron spectroscopy technique to study the ALD growth of Al₂O₃, from trimethylaluminum and H₂O, on the SiO_x/Si surface. We find that an electric dipole is formed at the Al₂O₃/SiO_xinterface immediately after the first Al₂O₃layer is deposited. We also observe persistent surface methyl groups in the H₂O half-cycle during ALD, and the amount of the persistent methyls is particularly higher during the initial Al₂O₃ALD growth, which suggests the formation of Si-CH₃on the surface. These findings can provide useful routes and insights toward interface engineering by ALD.

Flexible Ultrathin Chip-Film Patch for Electronic Component Integration and Encapsulation using Atomic Layer-Deposited Al2O3-TiO2 Nanolaminates

Plasma-enhanced atomic layer deposition (PEALD) is utilized to improve the barrier properties of an organic chip-film patch (CFP) when it is used as an implant to prevent moisture and ions from migrating into the embedded electronic circuits. For this purpose, surface condition and material properties of eight modifications of Al2O3-TiO2 nanolaminates sequentially deposited on polyimide PI-2611 films are evaluated in detail. The effect of stress-induced warpage of the deposited Al2O3-TiO2 on the wafer level is calculated with the Stoney equation and reveals higher tensile stress values while increasing the thickness of Al2O3-TiO2 nanolaminates from 20 up to 80 nm. Contact angle measurement and atomic force microscopy are used to investigate the surface energy and wettability, as well as the surface morphology of polyimide-Al2O3-TiO2 interfaces. We show that plasma treatment of pristine polyimide leads to an enhanced adhesion force of the PEAL-deposited layer by a factor of 1.3. The water vapor transmission rate (WVTR) is determined by exposing the coated polyimide films to 85% humidity and 23 °C and yields down to 1.58 × 10-3 g(H2O)/(m2 d). The data obtained are compared with alternative coating processes using the polymers parylene-C and benzocyclobutene (BCB). The latter shows higher WVTR values of 1.2 × 10-1 and 1.7 × 10-1 g(H2O)/(m2 d) compared to the PEALD-PI-2611 systems, indicating lower barrier properties. Two Al2O3-TiO2 modifications with low WVTR values have been chosen for encapsulating the CFP substrates and exposing them in a long-time experiment to chemical and mechanical loads in a chamber filled with phosphate-buffered saline at 37 °C, pH 7.3, and a cyclically applied pressure of 160 mbar (∼120 mm Hg). The electrical leakage behavior of the CFP systems is measured and reveals reliable electrical long-term stability far beyond 11 months, highlighting the great potential of PEALD-encapsulated CFPs.

Structure, Property, and Performance of Catalyst Layers in Proton Exchange Membrane Fuel Cells

Catalyst layer (CL) is the core component of proton exchange membrane (PEM) fuel cells, which determines the performance, durability, and cost. However, difficulties remain for a thorough understanding of the CLs' inhomogeneous structure, and its impact on the physicochemical and electrochemical properties, operating performance, and durability. The inhomogeneous structure of the CLs is formed during the manufacturing process, which is sensitive to the associated materials, composition, fabrication methods, procedures, and conditions. The state-of-the-art visualization and characterization techniques are crucial to examine the CL structure. The structure-dependent physicochemical and electrochemical properties are then thoroughly scrutinized in terms of fundamental concepts, theories, and recent progress in advanced experimental techniques. The relation between the CL structure and the associated effective properties is also examined based on experimental and theoretical findings. Recent studies indicated that the CL inhomogeneous structure also strongly affects the performance and degradation of the whole fuel cell, and thus, the interconnection between the fuel cell performance, failure modes, and CL structure is comprehensively reviewed. An analytical model is established to understand the effect of the CL structure on the effective properties, performance, and durability of the PEM fuel cells. Finally, the challenges and prospects of the CL structure-associated studies are highlighted for the development of high-performing PEM fuel cells.

Graphical abstract

Ultrahigh Mass Activity Pt Entities Consisting of Pt Single atoms, Clusters, and Nanoparticles for Improved Hydrogen Evolution Reaction

Platinum is one of the best-performing catalysts for the hydrogen evolution reaction (HER). However, high cost and scarcity severely hinder the large-scale application of Pt electrocatalysts. Constructing highly dispersed ultrasmall Platinum entities is thereby a very effective strategy to increase Pt utilization and mass activities, and reduce costs. Herein, highly dispersed Pt entities composed of a mixture of Pt single atoms, clusters, and nanoparticles are synthesized on mesoporous N-doped carbon nanospheres. The presence of Pt single atoms, clusters, and nanoparticles is demonstrated by combining among others aberration-corrected annular dark-field scanning transmission electron microscopy, X-ray absorption spectroscopy, and electrochemical CO stripping. The best catalyst exhibits excellent geometric and Pt HER mass activity, respectively ≈4 and 26 times higher than that of a commercial Pt/C reference and a Pt catalyst supported on nonporous N-doped carbon nanofibers with similar Pt loadings. Noteworthily, after optimization of the geometrical Pt electrode loading, the best catalyst exhibits ultrahigh Pt and catalyst mass activities (56 ± 3 A mg^-1 _Pt and 11.7 ± 0.6 A mg^-1 _Cat at -50 mV vs. reversible hydrogen electrode), which are respectively ≈1.5 and 58 times higher than the highest Pt and catalyst mass activities for Pt single-atom and cluster-based catalysts reported so far.

Size Effects in Gas-phase C-H Activation

The gas-phase clusters reaction permits addressing fundamental aspects of the challenges related to C-H activation. The size effect plays a key role in the activation processes as it may substantially affect both the reactivity and selectivity. In this paper, we reviewed the size effect related to the hydrocarbon oxidation by early transition metal oxides and main group metal oxides, methane activation mediated by late transition metals. Based on mass-spectrometry experiments in conjunction with quantum chemical calculations, mechanistic discussions were reviewed to present how and why the size greatly regulates the reactivity and product distribution.

Synthesis of Pt3Zn1 and Pt1Zn1 intermetallic nanocatalysts for dehydrogenation of ethane

Pt₃Zn₁ and Pt₁Zn₁ intermetallic nanoparticles supported on SiO₂ were synthesized by combining atomic layer deposition (ALD) of ZnO, incipient wetness impregnation (IWI) of Pt, and appropriate hydrogen reduction. The formation of Pt₁Zn₁ and Pt₃Zn₁ intermetallic nanoparticles was observed by both X-ray diffraction (XRD) and synchrotron X-ray absorption spectroscopy (XAS). STEM images showed that the 2-3 nm Pt-based intermetallic nanoparticles were uniformly dispersed on a SiO₂ support. The relationships between Pt-Zn intermetallic phases and synthesis conditions were established. In situ XAS measurements at Pt L₃ and Zn K edges during hydrogen reduction provided a detailed image of surface species evolution. Owing to a combined electronic and geometric effect, Pt₁Zn₁ exhibited much higher reactivity and stability than Pt₃Zn₁ and Pt in both the direct dehydrogenation and oxidative dehydrogenation of ethane to ethylene reactions.

Reducing Nonradiative Losses in Perovskite LEDs through Atomic Layer Deposition of Al2O3 on the Hole-Injection Contact

Halide perovskite light-emitting diodes (PeLEDs) exhibit great potential for use in next-generation display technologies. However, scale-up will be challenging due to the requirement of very thin transport layers for high efficiencies, which often present spatial inhomogeneities from improper wetting and drying during solution processing. Here, we show how a thin Al₂O₃ layer grown by atomic layer deposition can be used to preferentially cover regions of imperfect hole transport layer deposition and form an intermixed composite with the organic transport layer, allowing hole conduction and injection to persist through the organic hole transporter. This has the dual effect of reducing nonradiative recombination at the heterojunction and improving carrier selectivity, which we infer to be due to the inhibition of direct contact between the indium tin oxide and perovskite layers. We observe an immediate improvement in electroluminescent external quantum efficiency in our p-i-n LEDs from an average of 9.8% to 13.5%, with a champion efficiency of 15.0%. The technique uses industrially available equipment and can readily be scaled up to larger areas and incorporated in other applications such as thin-film photovoltaic cells.

Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth

In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe₂) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe₂ layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques.

Performance Optimization of Wearable Printed Human Body Temperature Sensor Based on Silver Interdigitated Electrode and Carbon-Sensing Film

The human body's temperature is one of the most important vital markers due to its ability to detect various diseases early. Accurate measurement of this parameter has received considerable interest in the healthcare sector. We present a novel study on the optimization of a temperature sensor based on silver interdigitated electrodes (IDEs) and carbon-sensing film. The sensor was developed on a flexible Kapton thin film first by inkjet printing the silver IDEs, followed by screen printing a sensing film made of carbon black. The IDE finger spacing and width of the carbon film were both optimized, which considerably improved the sensor's sensitivity throughout a wide temperature range that fully covers the temperature of human skin. The optimized sensor demonstrated an acceptable temperature coefficient of resistance (TCR) of 3.93 × 10^-3 °C^-1 for temperature sensing between 25 °C and 50 °C. The proposed sensor was tested on the human body to measure the temperature of various body parts, such as the forehead, neck, and palm. The sensor showed a consistent and reproducible temperature reading with a quick response and recovery time, exhibiting adequate capability to sense skin temperatures. This wearable sensor has the potential to be employed in a variety of applications, such as soft robotics, epidermal electronics, and soft human-machine interfaces.

Modelling amorphous materials via a joint solid-state NMR and X-ray absorption spectroscopy and DFT approach: application to alumina

Understanding a material's electronic structure is crucial to the development of many functional devices from semiconductors to solar cells and Li-ion batteries. A material's properties, including electronic structure, are dependent on the arrangement of its atoms. However, structure determination (the process of uncovering the atomic arrangement), is impeded, both experimentally and computationally, by disorder. The lack of a verifiable atomic model presents a huge challenge when designing functional amorphous materials. Such materials may be characterised through their local atomic environments using, for example, solid-state NMR and XAS. By using these two spectroscopy methods to inform the sampling of configurations from ab initio molecular dynamics we devise and validate an amorphous model, choosing amorphous alumina to illustrate the approach due to its wide range of technological uses. Our model predicts two distinct geometric environments of AlO₅ coordination polyhedra and determines the origin of the pre-edge features in the Al K-edge XAS. From our model we construct an average electronic density of states for amorphous alumina, and identify localized states at the conduction band minimum (CBM). We show that the presence of a pre-edge peak in the XAS is a result of transitions from the Al 1s to Al 3s states at the CBM. Deconvoluting this XAS by coordination geometry reveals contributions from both AlO₄ and AlO₅ geometries at the CBM give rise to the pre-edge, which provides insight into the role of AlO₅ in the electronic structure of alumina. This work represents an important advance within the field of solid-state amorphous modelling, providing a method for developing amorphous models through the comparison of experimental and computationally derived spectra, which may then be used to determine the electronic structure of amorphous materials.

Impermeable Atomic Layer Deposition for Sputtering Buffer Layer in Efficient Semi-Transparent and Tandem Solar Cells via Activating Unreactive Substrate

Atomic layer deposition (ALD) turns out to be particularly attractive technology for the sputtering buffer layer when preparing the semi-transparent (ST) perovskite solar cells (PSCs) and the tandem solar cells. ALD process turns to be island growth when the substrate is unreactive with the ALD reactants, resulting in the pin-hole layer, which causes an adverse effect on anti-sputtering. Here, p-i-n structured PSCs with ALD SnO_x as sputtering buffer layer are conducted. The commonly used electron transportation layer (ETL) PCBM in the p-i-n structured PVK solar cell is an unreactive substrate that prevents the layer-by-layer growth for the ALD SnO_x . PCBM layer is activated by introducing reaction sites to form impermeable ALD layers. By introducing reaction sites/ALD SnO_x as sputtering buffer layer, the authors succeed to fabricate ST-PSCs and perovskite/silicon (double-side polished) tandem solar cells with power conversion efficiency (PCE) of 20.25% and 23.31%, respectively. Besides, the unencapsulated device with reaction sites maintains more than 99% of the initial PCE after aging over 5100 h. This work opens a promising avenue to prepare impermeable layer for stable PSCs, ST-PSCs, tandem solar cells, and the related scale-up solar cells.

Nanoporous Metal-Organic Framework Thin Films Prepared Directly from Gaseous Precursors by Atomic and Molecular Layer Deposition: Implications for Microelectronics

Atomic/molecular layer deposition (ALD/MLD) allows for the direct gas-phase synthesis of crystalline metal-organic framework (MOF) thin films. Here, we show for the first time using krypton and methanol physisorption measurements that ALD/MLD-fabricated copper 1,4-benzenedicarboxylate (Cu-BDC) ultrathin films possess accessible porosity matching that of the corresponding bulk MOF.

How titanium and iron are integrated into hematite to enhance the photoelectrochemical water oxidation: a review

Hematite has been considered as a promising photoanode candidate for photoelectrochemical (PEC) water oxidation and has attracted numerous interests in the past decades. However, intrinsic drawbacks drastically lower its photocatalytic activity. Ti-based modifications including Ti-doping, Fe₂O₃/Fe₂TiO₅ heterostructures, TiO₂ passivation layers, and Ti-containing underlayers have shown great potential in enhancing the PEC conversion efficiency of hematite. Moreover, the combination of Ti-based modifications with various strategies towards more efficient hematite photoanodes has been widely investigated. Nevertheless, a corresponding comprehensive overview, especially with the most recent working mechanisms, is still lacking, limiting further improvement. In this respect, by summarizing the recent progress in Ti-modified hematite photoanodes, this review aims to demonstrate how the integration of titanium and iron atoms into hematite influences the PEC properties by tuning the carrier behaviours. It will provide more cues for the rational design of high-performance hematite photoanodes towards future practical applications.

Release Rate Studies of 5-Aminosalacylic Acid Coated with Atomic Layer-Deposited Al2O3 and ZnO in an Acidic Environment

5-Aminosalicylic acid (5-ASA) is a first-line defense drug used to treat mild cases of inflammatory bowel disease. When administered orally, the active pharmaceutical ingredient is released throughout the gastrointestinal tract relieving chronic inflammation. However, delayed and targeted released systems for 5-ASA to achieve optimal dose volumes in acidic environments remain a challenge. Here, we demonstrate the application of atomic layer deposition (ALD) as a technique to synthesize nanoscale coatings on 5-ASA to control its release in acidic media. ALD Al₂O₃ (38.0 nm) and ZnO (24.7 nm) films were deposited on 1 g batch powders of 5-ASA in a rotatory thermal ALD system. Fourier transform infrared spectroscopy, scanning electron microscopy, and scanning/transmission electron microscopy establish the interfacial chemistry and conformal nature of ALD coating over the 5-ASA particles. While Al₂O₃ forms a sharp interface with 5-ASA, ZnO appears to diffuse inside 5-ASA. The release of 5-ASA is studied in a pH 4 solution via UV-vis spectroscopy. Dynamic stirring, mimicking gut peristalsis, causes mechanical attrition of the Al₂O₃-coated particles, thereby releasing 5-ASA. However, under static conditions lasting 5000 s, the Al₂O₃-coated particles release only 17.5% 5-ASA compared to 100% release with the ZnO coating. Quartz crystal microbalance-based etch studies confirm the stability of Al₂O₃ in pH 4 media, where the ZnO films etch 41× faster than Al₂O₃. Such results are significant in achieving a nanoscale coating-based drug delivery system for 5-ASA with controlled release in acidic environments.

Scaling-Up of Thin-Film Photoelectrodes for Solar Water Splitting Based on Atomic Layer Deposition

Atomic layer deposition (ALD) is an established method to prepare protective layers for Si-based photoelectrodes for photoelectrochemical (PEC) water splitting. Although ALD has been widely used in microelectronics and photovoltaics, it remains a great challenge to design simple and effective ALD systems to deposit large and uniform protective films for Si-based photoelectrodes with industrial sizes. This paper describes the design and realization of a simple ALD chamber configuration for photoelectrodes with large sizes, in which the influence of a gas redistributor over the gas flow and heat transfer during film growth was revealed by computational fluid dynamics simulations and experimental investigations. A simple circular baffle-type redistributor was proposed to establish a uniform gas flow field throughout the ALD reactor, resulting in a uniform temperature profile. With this simple baffle redistributor, the large-area Al₂O₃ monitor film (46 nm thickness) reached a good nonuniformity (Nu %) of 0.88% over a large area of 256 cm². This design enables the fabrication of large-scale photocathodes from standard industrial-grade 166 mm Si(100) wafers (276 cm²) by depositing 50 nm TiO₂ protective films with Nu % less than 5%. The obtained photocathode achieves a saturation current of 6.45 A with a hydrogen production rate of 43.2 mL/min under outdoor illumination. This work elucidates how flow pattern and heat transfer may influence the deposition of protective layers over large photoelectrodes, providing guidance for future industrial applications of PEC water splitting.

Atomically flat semiconductor nanoplatelets for light-emitting applications

The last decade has witnessed extensive breakthroughs and significant progress in atomically flat two-dimensional (2D) semiconductor nanoplatelets (NPLs) in terms of synthesis, growth mechanisms, optical and electronic properties and practical applications. Such NPLs have electronic structures similar to those of quantum wells in which excitons are predominantly confined along the vertical direction, while electrons are free to move in the lateral directions, resulting in unique optical properties, such as extremely narrow emission line width, short photoluminescence (PL) lifetime, high gain coefficient, and giant oscillator strength transition (GOST). These unique optical properties make NPLs favorable for high color purity light-emitting applications, in particular in light-emitting diodes (LEDs), backlights for liquid crystal displays (LCDs) and lasers. This review article first introduces the intrinsic characteristics of 2D semiconductor NPLs with atomic flatness. Subsequently, the approaches and mechanisms for the controlled synthesis of atomically flat NPLs are summarized followed by an insight on recent progress in the mediation of core/shell, core/crown and core/crown@shell structures by selective epitaxial growth of passivation layers on different planes of NPLs. Moreover, an overview of the unique optical properties and the associated light-emitting applications is elaborated. Despite great progress in this research field, there are some issues relating to heavy metal elements such as Cd²⁺ in NPLs, and the ambiguous gain mechanisms of NPLs and others are the main obstacles that prevent NPLs from widespread applications. Therefore, a perspective is included at the end of this review article, in which the current challenges in this stimulating research field are discussed and possible solutions to tackle these challenges are proposed.

Impact of Aluminum Oxide Nanocoating on Drug Release from Amorphous Solid Dispersion Particles

Atomic layer coating (ALC) is emerging as a particle engineering strategy to inhibit surface crystallization of amorphous solid dispersions (ASDs). In this study, we turn our attention to evaluating drug release behavior from ALC-coated ASDs, and begin to develop a mechanistic framework. Posaconazole/hydroxypropyl methylcellulose acetate succinate was used as a model system at both 25% and 50% drug loadings. ALC-coatings of aluminum oxide up to 40 nm were evaluated for water sorption kinetics and dissolution performance under a range of pH conditions. Scanning electron microscopy with energy dispersive X-ray analysis was used to investigate the microstructure of partially released ASD particles. Coating thickness and defect density (inferred from deposition rates) were found to impact water sorption kinetics. Despite reduced water sorption kinetics, the presence of a coating was not found to impact dissolution rates under conditions where rapid drug release was observed. Under slower releasing conditions, underlying matrix crystallization was reduced by the coating, enabling greater levels of drug release. These results demonstrate that water was able to penetrate through the ALC coating, hydrating the amorphous solid, which can initiate dissolution of drug and/or polymer (depending on pH conditions). Swelling of the ASD substrate subsequently occurs, disrupting and cracking the coating, which serves to facilitate rapid drug release. Water sorption kinetics are highlighted as a potential predictive tool to investigate the coating quality and its potential impact on dissolution performance. This study has implications for formulation design and evaluation of ALC-coated ASD particles.

Super broadband mid-infrared absorbers with ultrathin folded highly-lossy films

Super broadband optical absorbers with ultrathin films have been keenly pursued for a long time. Although highly lossy materials with sharp light attenuation have the potential to become super absorbers, a large percent of light from free space is inevitably reflected back for the distinct impedance mismatch. Here, a simple strategy, of which reducing the thickness of highly-lossy thin films to minish reflectance and simultaneously folding the ultrathin films to make light multiple pass through, is proposed to obtain super broadband mid-infrared absorbers with ultrathin films. Along this line, the absorbers were prepared by depositing Al-doped ZnO film on scaffolds consisted of alumina spherical shells, whose substrates were opaque. When the thickness of Al-doped ZnO is 43 nm and the layer number of scaffolds is three, a maximum average absorptance was achieved as 97.6% over the wavelength range from 3 to 15 μm. Applying this strategy on polished Al foil, excellent infrared camouflage performance on human-body background was demonstrated. Featured by the strong broadband optical absorption with ultrathin films, flexible access to multiple substrates and low-cost procedures, this approach has the potential in widespread applications of infrared thermal emitters and optoelectronic devices.

Charge Separation between Pt Co-catalysts and Plasmonic Au in Pt-Au/C3N4 Photocatalysts

Chemical processes induced by surface plasmon resonance have received great attention due to the wide spectral absorption and tunable optical property. Co-catalysts have been introduced into plasmonic-metal/semiconductor photocatalysts to inhibit the recombination of plasmon-induced carriers. However, it is unclear how the locations of co-catalysts (on the surface of plasmonic metal or the semiconductor) affect the plasmonic photocatalystic reactions. Herein, we report that Pt co-catalysts can be selectively deposited on Au nanoparticles (NPs) of Au/C₃N₄ photocatalysts through an atomic layer deposition method. Compared with the Pt co-catalysts exclusively on C₃N₄, Pt solely on Au NPs has a 4.5-fold increase in activity for plasmonic hydrogen evolution. The reduced photoluminescence intensity and prolonged photoluminescence lifetime reveal that Pt solely on Au NPs provides higher charge separation efficiency. The enhanced photocatalytic activity of Pt co-catalysts solely on Au NPs is attributable to the more efficient and direct utilization of the plasmon resonance-induced electrons and separation of electrons and holes.

On-Demand Electrochemical Fabrication of Ordered Nanoparticle Arrays using Scanning Electrochemical Cell Microscopy

Well-ordered nanoparticle arrays are attractive platforms for a variety of analytical applications, but the fabrication of such arrays is generally challenging. Here, it is demonstrated that scanning electrochemical cell microscopy (SECCM) can be used as a powerful, instantly reconfigurable tool for the fabrication of ordered nanoparticle arrays. Using SECCM, Ag nanoparticle arrays were straightforwardly fabricated via electrodeposition at the interface between a substrate electrode and an electrolyte-filled pipet. By dynamically monitoring the currents flowing in an SECCM cell, individual nucleation and growth events could be detected and controlled to yield individual nanoparticles of controlled size. Characterization of the resulting arrays demonstrate that this SECCM-based approach enables spatial control of nanoparticle location comparable with the terminal diameter of the pipet employed and straightforward control over the volume of material deposited at each site within an array. These results provide further evidence for the utility of probe-based electrochemical techniques such as SECCM as tools for surface modification in addition to analysis.

A flexible protruding microelectrode array for neural interfacing in bioelectronic medicine

Recording neural signals from delicate autonomic nerves is a challenging task that requires the development of a low-invasive neural interface with highly selective, micrometer-sized electrodes. This paper reports on the development of a three-dimensional (3D) protruding thin-film microelectrode array (MEA), which is intended to be used for recording low-amplitude neural signals from pelvic nervous structures by penetrating the nerves transversely to reduce the distance to the axons. Cylindrical gold pillars (Ø 20 or 50 µm, ~60 µm height) were fabricated on a micromachined polyimide substrate in an electroplating process. Their sidewalls were insulated with parylene C, and their tips were optionally modified by wet etching and/or the application of a titanium nitride (TiN) coating. The microelectrodes modified by these combined techniques exhibited low impedances (~7 kΩ at 1 kHz for Ø 50 µm microelectrode with the exposed surface area of ~5000 µm²) and low intrinsic noise levels. Their functionalities were evaluated in an ex vivo pilot study with mouse retinae, in which spontaneous neuronal spikes were recorded with amplitudes of up to 66 µV. This novel process strategy for fabricating flexible, 3D neural interfaces with low-impedance microelectrodes has the potential to selectively record neural signals from not only delicate structures such as retinal cells but also autonomic nerves with improved signal quality to study neural circuits and develop stimulation strategies in bioelectronic medicine, e.g., for the control of vital digestive functions.

29 GHz single-mode vertical-cavity surface-emitting lasers passivated by atomic layer deposition

The fabrication processes of high-speed oxide-confined single-mode (SM)-vertical-cavity surface-emitting lasers (VCSELs) are complex, costly, and often held back by reliability and yield issues, which substantially set back the high-volume processing and mass commercialization of SM-VCSELs in datacom or other applications. In this article, we report the effects of Al₂O₃ passivation films deposited by atomic layer deposition (ALD) on the mesa sidewalls of high-speed 850-nm SM-VCSELs. The ALD-deposited film alleviates the trapping of carriers by sidewall defects and is an effective way to improve the performance of SM-VCSELs. The ALD-passivated SM-VCSELs showed statistically significant static performance improvements and reached a believed to be record-breaking SM-modulation bandwidth of 29.1 GHz. We also propose an improved microwave small-signal equivalent circuit model for SM-VCSELs that accounts for the losses attributed to the mesa sidewalls. These findings demonstrate that ALD passivation can mitigate processing-induced surface damage, enhance the performance of SM-VCSELs, and enable mass production of high-quality SM-VCSELs for mid- to long-reach optical interconnects.

Laboratory-scale X-ray absorption spectroscopy of 3d transition metals in inorganic thin films

In this paper we present laboratory-scale X-ray absorption spectroscopy applied to the research of nanometer-scale thin films. We demonstrate the Cu K edge X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) of CuI and CuO thin films grown with atomic layer deposition. Film thicknesses in the investigated samples ranged from 12 to 248 nm. Even from the thinnest films, XANES spectra can be obtained in 5-20 minutes and EXAFS in 1-4 days. In order to prove the capability of laboratory-based XAS for in situ measurements on thin films, we demonstrate an experiment on in situ oxidation of a 248 nm thick CuI film at a temperature of 240 °C. These methods have important implications for novel and enhanced possibilities for inorganic thin film research.

Environmental gas sensors based on electroactive hybrid organic-inorganic nanocomposites using nanostructured materials

Advanced gas sensing devices are urgently demanded in the modern scientific world to control air pollution and protect human life. For this purpose, semiconducting electroactive materials can revolutionize the idea of conventional gas sensors. Chemi-resistive gas sensors based on electroactive hybrid organic-inorganic nanocomposites are incredibly promising gas sensing materials because they possess the advantages of excellent selectivity, high sensitivity, low response time, repeatability, high stability, cost-effectiveness, and simple fabrication techniques, and they can be operated at room temperature. This review emphasizes the recent developments of organic-inorganic hybrid nanocomposite-based electroactive gas sensors, including metal oxide nanocomposites, which are potential gas sensing materials due to the presence of numerous charge carriers. The review also focuses on nanostructured materials of different dimensions, such as semiconducting quantum dots, carbon dots, nanotubes, nanowires, and nanosheets, used for developing these gas sensing compounds and their significance and challenges. Some possible fabrication techniques for developing efficient gas sensors with different morphologies are discussed, with their probable sensing mechanism behind the detection of toxic vapours. Subsequently, a summary and possible outcome of this study, along with the various achievements and prospects in this field, are also discussed.

Atomic Layer Deposition of Sb2 Te3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Atomic layer deposition (ALD) of Sb₂ Te₃ /GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO₂ insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb₂ Te₃ enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge₂ Sb₂ Te₅ alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge₂ Sb₂ Te₅ alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

Review Paper: Residual Stresses in Deposited Thin-Film Material Layers for Micro- and Nano-Systems Manufacturing

This review paper covers a topic of significant importance in micro- and nano-systems development and manufacturing, specifically the residual stresses in deposited thin-film material layers and methods to control or mitigate their impact on device behavior. A residual stress is defined as the presence of a state of stress in a thin-film material layer without any externally applied forces wherein the residual stress can be compressive or tensile. While many material properties of deposited thin-film layers are dependent on the specific processing conditions, the residual stress often exhibits the most variability. It is not uncommon for residual stresses in deposited thin-film layers to vary over extremely large ranges of values (100% percent or more) and even exhibit changes in the sign of the stress state. Residual stresses in deposited layers are known to be highly dependent on a number of factors including: processing conditions used during the deposition; type of material system (thin-films and substrate materials); and other processing steps performed after the thin-film layer has been deposited, particularly those involving exposure to elevated temperatures. The origins of residual stress can involve a number of complex and interrelated factors. As a consequence, there is still no generally applicable theory to predict residual stresses in thin-films. Hence, device designers usually do not have sufficient information about the residual stresses values when they perform the device design. Obviously, this is a far less than ideal situation. The impact of this is micro- and nano-systems device development takes longer, is considerably more expensive, and presents higher risk levels. The outline of this paper is as follows: a discussion of the origins of residual stresses in deposited thin-film layers is given, followed by an example demonstrating the impact on device behavior. This is followed by a review of thin-film deposition methods outlining the process parameters known to affect the resultant residual stress in the deposited layers. Then, a review of the reported methods used to measure residual stresses in thin-films are described. A review of some of the literature to illustrate the level of variations in residual stresses depending on processing conditions is then provided. Methods which can be used to control the stresses and mitigate the impact of residual stresses in micro- and nano-systems device design and fabrication are then covered, followed by some recent development of interest.

Nanoporous Alumina Support Covered by Imidazole Moiety-Based Ionic Liquids: Optical Characterization and Application

This work analyzes chemical surface and optical characteristics of a commercial nanoporous alumina structure (NPAS) as a result of surface coverage by different imidazolium-based ionic liquids (1-butyl-3-metylimidazolium hexafluorophosphate, 3-methyl-1-octylimidazolium hexafluorophosphate, or 1-ethyl-3-methylimidazolium tetrafluoroborate). Optical characteristics of the IL/NPAS samples were determined by photoluminescence (at different excitation wavelengths (from 300 nm to 400 nm), ellipsometry spectroscopy, and light transmittance/reflectance measurements for a range of wavelengths that provide information on modifications related to both visible and near-infrared regions. Chemical surface characterization of the three IL/NPAS samples was performed by X-ray photoelectron spectroscopy (XPS), which indicates almost total support coverage by the ILs. The IL/NPAS analyzed samples exhibit different photoluminescence behavior, high transparency (<85%), and a reflection maximum at wavelength ~380 nm, with slight differences depending on the IL, while the refractive index values are rather similar to those shown by the ILs. Moreover, the illuminated I−V curves (under standard conditions) of the IL/NPAS samples were also measured for determining the efficiency energy conversion to estimate their possible application as solar cells. On the other hand, a computational quantum mechanical modeling method (DFT) was used to establish the most stable bond between the ILs and the NPAS support.

Design of Single-Atom Catalysts and Tracking Their Fate Using Operando and Advanced X-ray Spectroscopic Tools

The potential of operando X-ray techniques for following the structure, fate, and active site of single-atom catalysts (SACs) is highlighted with emphasis on a synergetic approach of both topics. X-ray absorption spectroscopy (XAS) and related X-ray techniques have become fascinating tools to characterize solids and they can be applied to almost all the transition metals deriving information about the symmetry, oxidation state, local coordination, and many more structural and electronic properties. SACs, a newly coined concept, recently gained much attention in the field of heterogeneous catalysis. In this way, one can achieve a minimum use of the metal, theoretically highest efficiency, and the design of only one active site-so-called single site catalysts. While single sites are not easy to characterize especially under operating conditions, XAS as local probe together with complementary methods (infrared spectroscopy, electron microscopy) is ideal in this research area to prove the structure of these sites and the dynamic changes during reaction. In this review, starting from their fundamentals, various techniques related to conventional XAS and X-ray photon in/out techniques applied to single sites are discussed with detailed mechanistic and in situ/operando studies. We systematically summarize the design strategies of SACs and outline their exploration with XAS supported by density functional theory (DFT) calculations and recent machine learning tools.

Atomic-Layer-Deposited Aluminum Oxide Thin Films Probed with X-ray Scattering and Compared to Molecular Dynamics and Density Functional Theory Models

A better understanding of amorphous aluminum oxide's structure and electronic properties is obtained through combined experimental and computational approaches. Grazing incidence X-ray scattering measurements were carried out on aluminum oxide thin films grown using thermal atomic layer deposition. The corresponding pair distribution functions (PDFs) showed structures similar to previously reported PDFs of solid-state amorphous alumina and molten alumina. Structural models based on crystalline alumina polymorphs (PDFgui) and amorphous alumina (molecular dynamics, MD) were examined for structural comparisons to the experimental PDF data. Smaller MD models were optimized and verified against larger models to allow for quantum chemical electronic structure calculations. The electronic structure of the amorphous alumina models yields additional insight into the band structure and electronic defects present in amorphous alumina that are not present in crystalline samples.

Crystallinity Effect on Electrical Properties of PEALD-HfO2 Thin Films Prepared by Different Substrate Temperatures

Hafnium oxide (HfO₂) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO₂ films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO₂ films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. The substrate temperature dependent electrical properties of PEALD-HfO₂ films were obtained by capacitance-voltage and current-voltage measurements. GIXRD patterns and XRR investigations show that increasing the substrate temperature improved the crystallinity and density of HfO₂ films. The crystallinity of HfO₂ films has a major effect on electrical properties of the films. HfO₂ thin film deposited at 300 °C possesses the highest dielectric constant and breakdown electric field.