Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate

Because of its unique electronic band structure, molybdenum disulfide (MoS₂) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS₂ films on SiO₂/Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and Na₂SO₄ catalysis, realizing the centimeter scale growth of a continuous MoS₂ film on SiO₂/Si substrates. The as-grown MoS₂ film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO₂ substrates rather than to interfere with as-grown MoS₂. Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm² V^-1 s^-1_. We believe our method will pave a new way for MoS₂ toward real application in modern electronics.

Nanoscale boron carbonitride semiconductors for photoredox catalysis

The conversion of solar energy to chemical energy achieved by photocatalysts comprising homogeneous transition-metal based systems, organic dyes, or semiconductors has received significant attention in recent years. Among these photocatalysts, boron carbon nitride (BCN) materials, as an emerging class of metal-free heterogeneous semiconductors, have extended the scope of photocatalysts due to their good performance and Earth abundance. The combination of boron (B), carbon (C), and nitrogen (N) constitutes a ternary system with large surface area and abundant activity sites, which together contribute to the good performance for reduction reactions, oxidation reactions and orchestrated both reduction and oxidation reactions. This Minireview reports the methods for the synthesis of nanoscale hexagonal boron carbonitride (h-BCN) and describes the latest advances in the application of h-BCN materials as semiconductor photocatalysts for sustainable photosynthesis, such as water splitting, reduction of CO₂, acceptorless dehydrogenation, oxidation of sp³ C-H bonds, and sp² C-H functionalization. h-BCN materials may have potential for applications in other organic transformations and industrial manufacture in the future.

Recent advances in two-dimensional-material-based sensing technology toward health and environmental monitoring applications

Monitoring harmful and toxic chemicals, gases, microorganisms, and radiation has been a challenge to the scientific community for the betterment of human health and environment. Two-dimensional (2D)-material-based sensors are highly efficient and compatible with modern fabrication technology, which yield data that can be proficiently used for health and environmental monitoring. Graphene and its oxides, black phosphorus (BP), transition metal dichalcogenides (TMDCs), metal oxides, and other 2D nanomaterials have demonstrated properties that have been alluring for the manufacture of highly sensitive sensors due to their unique material properties arising from their inherent structures. This review summarizes the properties of 2D nanomaterials that can provide a platform to develop high-performance sensors. In this review, we have also discussed the advances made in the field of infrared photodetectors and electrochemical sensors and how the structural properties of 2D nanomaterials affect sensitivity and performance. Further, this review highlights 2D-nanomaterial-based electrochemical sensors that can be used to check for contaminations from heavy metals, organic/inorganic compounds, poisonous gases, pesticides, bacteria, antibiotics, etc., in water or air, which are severe risks to human wellbeing as well as the environment. Moreover, the limitations, future prospects, and challenges for the development of sensors based on 2D materials are also discussed for future advancements.

3-dimensional nucleation of Fe oxide induced by a graphene buffer layer

Shaping the morphology of oxide nanolayers is of paramount importance in tailoring their physical and chemical properties. Here, the influence of a two dimensional graphene buffer layer on the growth of Fe oxide has been investigated by comparing the oxide deposition on a Ni(111) and a graphene/Ni(111) substrate. Scanning tunneling microscopy images acquired at a mesoscopic scale indicate that Fe oxide grows layer-by-layer on the bare Ni(111) surface, while the nucleation of three-dimensional clusters is induced by graphene. Atomically resolved images reveal that Fe oxide adopts an in-plane lattice constant similar to that of the FeO(111) surface when deposited on Ni(111) and graphene/Ni(111), indicating in both cases, a weak interaction between the overlayer and the substrate. Accordingly, it is suggested that the different growth mode is mainly driven by the graphene-induced lowering of the substrate surface free energy.

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization

The fine-tuning of electro-optic properties is critical for high-performing technologies. This is now obtainable with advanced nanostructures, particularly two-dimensional (2D) monolayer materials such as molybdenum disulfide (MoS₂). Using spin-polarized periodic density functional theory (DFT), we find that the direct band gap (K → K') can be chemically tuned with covalently bound functional groups. With an electron-withdrawing group such as fluorine, we observe one occupied α and one unoccupied β band, which correspond to the addition of an α electron and a β hole, confirmed with the spin difference (Q_α - Q_β) being 1. By increasing the electron-donating behavior with the replacement of F by H and then by Me, the occupied (valence) α band shifts upward in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both α and β unoccupied (conduction) bands of the MoS₂ shift down, relative to the Fermi energy, until they are in contact with the Fermi and the system can be described as metallic. The MoS₂ + F system is thus a small gap semiconductor (0.96 eV), and the MoS₂ + H and MoS₂ + Me gaps are 0.21 and 0 eV (metallic), respectively. Spin density calculations illustrate the semilocalized nature of the α spin; however, this is not formed from the radical of the functionalizing group, but rather the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. Five- and six-membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene, and pyridine to a sulfur atom of the MoS₂ surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS₂ can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly as p-type conductors. Semilocalization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronic applications, such as photoluminescence devices, contact-free transistors, and quantum communication.

Templated growth of oriented layered hybrid perovskites on 3D-like perovskites

The manipulation of crystal orientation from the thermodynamic equilibrium states is desired in layered hybrid perovskite films to direct charge transport and enhance the perovskite devices performance. Here we report a templated growth mechanism of layered perovskites from 3D-like perovskites which can be a general design rule to align layered perovskites along the out-of-plane direction in films made by both spin-coating and scalable blading process. The method involves suppressing the nucleation of both layered and 3D perovskites inside the perovskite solution using additional ammonium halide salts, which forces the film formation starts from solution surface. The fast drying of solvent at liquid surface leaves 3D-like perovskites which surprisingly templates the growth of layered perovskites, enabled by the periodic corner-sharing octahedra networks on the surface of 3D-like perovskites. This discovery provides deep insights into the nucleation behavior of octahedra-array-based perovskite materials, representing a general strategy to manipulate the orientation of layered perovskites.

The orientation of layered perovskites plays a crucial role in their charge transport behavior and hence, the efficiency of related solar cells. Here, the authors find that preformed 3D-like perovskites can efficiently template the growth of layered perovskites and determine their orientation.

Thermotropic liquid crystal (5CB) on two-dimensional materials

We present ground-state electronic properties of the liquid crystal 4-cyano-4^{'}-pentylbiphenyl (5CB) on the two-dimensional materials monolayer graphene, hexagonal boron nitride, and phosphorene. Our density functional theory results show that the physisorption is robust on all surfaces with the strongest binding of 5CB on phosphorene. All surfaces exhibit flexural distortion, especially monolayer graphene and hexagonal boron nitride. While we find type-I alignment for all three substrates, meaning the Fermi level of the system is in the HOMO-LUMO gap of 5CB, the band structures are qualitatively different. Unlike for graphene and phosphorene, the HOMO-LUMO of 5CB appear as localized states within the band gap of boron nitride. In addition, we find that the valence band for boron nitride is sensitive to the orientation of 5CB relative to the surface. The qualitatively different band structures demonstrate the importance of substrate selection for tailoring the electronic and optoelectronic properties of nematic liquid crystals on two-dimensional materials.

Single variable defined technology control of the optical properties in MoS2 films with controlled number of 2D-layers

Fabrication of practical devices based on the transient metal dichalcogenides (TMDs) can be successively extended to various areas of the applications if the large area growth technology can be intentionally controlled and the characteristics of the layers can be easily predicted. In present work we presented the principles of the technology control based on the single key variable that can be directly related to the sequence of the technological processes. The atomically thin MoS₂ layers were used as a model material and the layers were obtained by the CVD synthesis of the molybdenum precursor. Our thorough study demonstrated that the method allowed to deliberately choose the number of the MoS₂ two-dimensional (2D)-layers between 1 and 10 by simply choosing the precursor deposition time. The optical properties of the layers were characterised by the optical transitions that corresponded to the known band structure of the MoS₂ layers. Fused calibration diagram was proposed as the practical tool for the technology control and it was proved to be highly successive in relating the 2D-properties of the films with the initial stage of the fabrication technology. The method can be adapted to the wafer size TMDs growth on the diverse substrates.

Recent Advances in Chemical Functionalization of 2D Black Phosphorous Nanosheets

Owing to their tunable direct bandgap, high charge carrier mobility, and unique in-plane anisotropic structure, black phosphorus nanosheets (BPNSs) have emerged as one of the most important candidates among the 2D materials beyond graphene. However, the poor ambient stability of black phosphorus limits its practical application, due to the chemical degradation of phosphorus atoms to phosphorus oxides in the presence of oxygen and/or water. Chemical functionalization is demonstrated as an efficient approach to enhance the ambient stability of BPNSs. Herein, various covalent strategies including radical addition, nitrene addition, nucleophilic substitution, and metal coordination are summarized. In addition, efficient noncovalent functionalization methods such as van der Waals interactions, electrostatic interactions, and cation-π interactions are described in detail. Furthermore, the preparations, characterization, and diverse applications of functionalized BPNSs in various fields are recapped. The challenges faced and future directions for the chemical functionalization of BPNSs are also highlighted.

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

Two-dimensional (2D) layered semiconductors have recently emerged as attractive building blocks for next-generation low-power nonvolatile memories. However, challenges remain in the controllable fabrication of bipolar resistive switching circuit components from these materials. Here, the experimental realization of lateral memtransistors from monolayer single-crystal molybdenum disulfide (MoS₂) utilizing a focused helium ion beam is reported. Site-specific irradiation with the focused probe of a helium ion microscope creates a nanometer-scale defect-rich region, bisecting the MoS₂ lattice. The reversible drift of these defects in the applied electric field modulates the resistance of the channel, enabling versatile memristive functionality. The device can reliably retain its resistance ratios and set/reset biases for 1180 switching cycles. Long-term potentiation and depression with sharp habituation are demonstrated. This work establishes the feasibility of ion irradiation for controllable fabrication of 2D memristive devices with promising key performance parameters, such as low power consumption. The applicability of these devices for synaptic emulation may address the demands of future neuromorphic architectures.

A new criterion for the prediction of solid-state phase transition in TMDs

The classical thermodynamic criterion for phase transition predicts whether the phase transition will occur according to whether the nth derivative of the state parameter is discontinuous, and the continuity verification of multi-order derivatives increases the difficulty and complexity of judgment for phase transition to a certain extent. Based on the reverse shifts of the DOS curves near the Fermi level, we propose a new criterion for solid-state phase transition named Conch Criterion, which has been verified in the TMD system. The new criterion can observe the occurrence of phase transition from another perspective besides the thermodynamic properties while mutually confirming the thermodynamic criterion.

High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2 flakes

van der Waals layered two-dimensional (2D) metal dichalcogenides, such as SnS₂, have garnered great interest owing to their new physics in the ultrathin limit, and become potential candidates for the next-generation electronics and/or optoelectronics fields. Herein, we report high-performance UV photodetectors established on high quality SnS₂ flakes and address the relatively lower photodetection capability of the thinner flakes via a compatible gate-controlling strategy. SnS₂ flakes with different thicknesses were mechanically exfoliated from CVT-grown high-quality 2H-SnS₂ single crystals. The photodetectors fabricated using SnS₂ flakes reveal a desired response performance (R _λ ≈ 112 A W^-1, EQE ≈ 3.7 × 10⁴%, and D* ≈ 1.18 × 10¹¹ Jones) under UV light with a very low power density (0.2 mW cm^-2 @ 365 nm). Specifically, SnS₂ flakes present a positive thickness-dependent photodetection behavior caused by the enhanced light absorption capacity of thicker samples. Fortunately, the responsivity of thin SnS₂ flakes (e.g. ∼15 nm) could be indeed enhanced to ∼140 A W^-1 under a gate bias of +20 V, reaching the performance level of thicker samples without gate bias (e.g. ∼144 A W^-1 for a ∼60 nm flake). Our results offer an efficient way to choose 2D crystals with controllable thicknesses as optimal candidates for desirable optoelectronic devices.

Multiscale Design of Graphyne-Based Materials for High-Performance Separation Membranes

By varying the number of acetylenic linkages connecting aromatic rings, a new family of atomically thin graph-n-yne materials can be designed and synthesized. Generating immense scientific interest due to its structural diversity and excellent physical properties, graph-n-yne has opened new avenues toward numerous promising engineering applications, especially for separation membranes with precise pore sizes. Having these tunable pore sizes in combination with their excellent mechanical strength to withstand high pressures, free-standing graph-n-yne is theoretically posited to be an outstanding membrane material for separating or purifying mixtures of either gases or liquids, rivaling or even dramatically exceeding the capabilities of current, state-of-art separation membranes. Computational modeling and simulations play an integral role in the bottom-up design and characterization of these graph-n-yne materials. Thus, here, the state of the art in modeling α-, β-, γ-, δ-, and 6,6,12-graphyne nanosheets for synthesizing graph-2-yne materials and 3D architectures thereof is discussed. Different synthesis methods are described and a broad overview of computational characterizations of graph-n-yne's electrical, chemical, and thermal properties is provided. Furthermore, a series of in-depth computational studies that delve into the specifics of graph-n-yne's mechanical strength and porosity, which confer superior performance for separation and desalination membranes, are reviewed.

High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronic Band Structure for Hydrogen Evolution Reaction

Extrinsically controlling the intrinsic activity and stability of two-dimensional (2D) semiconducting materials by substitutional doping is crucial for energy-related applications. However, an in situ transition-metal doping strategy for uniform and large-area chemical vapor deposited 2D semiconductors remains a formidable challenge. Here, we successfully synthesize highly uniform niobium-substituted tungsten disulfide (Nb-WS₂) monolayers, with a doping concentration of nearly 7% and sizes reaching 100 μm, through a metal dopant precursor route, using salt-catalyzed chemical vapor deposition (CVD). Our results reveal unusual effects in the structural, optical, electronic, and electrocatalysis characteristics of the Nb-WS₂ monolayer. The Nb dopants readily induce a band restructuring effect, providing the most active site with a hydrogen adsorption energy of 0.175 eV and hence greatly improving its hydrogen evolution activity_. The combined advantages of the unusual physics and chemistry by in situ CVD doping technique open the possibility in designing 2D-material-based electronics and catalysts of novel functionalities.

Two-Dimensional Gold Sulfide Monolayers with Direct Band Gap and Ultrahigh Electron Mobility

It remains a pressing task to search for new two-dimensional (2D) semiconducting materials for future-generation electronic applications. By using density functional theory computations and global structure prediction methods, we demonstrate two new gold sulfide monolayers (2D Au₂S and AuS), both exhibiting excellent electronic properties and high stabilities. All the gold sulfide monolayers are semiconductors with band gaps in the range 1.0-3.6 eV. In particular, the α-Au₂S monolayer is predicted to possess a direct band gap of 1.0 eV and extremely high electron and hole mobilities of 8.45 × 10⁴ and 0.40 × 10⁴ cm² V^-1 S^-1, respectively. The phonon dispersion calculations and ab initio molecular dynamics simulations indicate that the gold sulfide monolayers exhibit robust dynamical and thermal stabilities. Moreover, the α-Au₂S monolayer appears to show strong oxidation resistibility. The novel electronic properties, coupled with structural and chemical stabilities, endow the new gold sulfide monolayers to be highly promising for future applications in nanoelectronics.

Superior spin-polarized electronic structure in MoS2/MnO2 heterostructures with an efficient hole injection

Two-dimensional (2D) materials with intrinsic magnetism and low hole injection barriers to transition metal dichalcogenides are crucial to develop dopant-free all-2D p-type spin field effect transistors for CMOS logic and spintronic applications. Here, the electronic structures of 2D MoS₂/MnO₂ heterostructures are investigated by first-principles calculations, where the monolayered MnO₂ has two polymorphs including magnetic metal h-MnO₂ and magnetic semiconductor t-MnO₂. Both the MoS₂/h-MnO₂ and MoS₂/t-MnO₂ heterostructures show p-type doping for MoS₂. In the MoS₂/h-MnO₂ model with a semiconductor/metal contact, the charge transfer can affect the occupation of Mn 3d and O 2p orbitals, which results in a half-metallic characteristic of the heterostructure with a Schottky barrier height of only 0.15 eV. However, the MoS₂/t-MnO₂ model with a semiconductor/semiconductor contact shows a spin-gapless electronic structure. Moreover, the type-II band alignment of the MoS₂/t-MnO₂ heterostructure can facilitate the effective separation of electrons and holes, which can enhance the lifetime of interlayer excitons. The long interlayer exciton lifetime makes it a good candidate for electron-hole separators and related optoelectronic devices. By applying vertical compression, the spin channel of the half-metallic MoS₂/h-MnO₂ heterostructure can be reversed and the spin-gapless band structure of the MoS₂/t-MnO₂ heterostructure becomes half-metallic. Furthermore, by applying a gate voltage, the Schottky barrier height and the spin-gapless gap can be tailored. The tunable spin polarization, spin-polarized direction and exciton recombination rate provide a feasible way toward spintronics and optoelectronics.

Regulation of Two-Dimensional Lattice Deformation Recovery

The lattice directly determines the electronic structure, and it enables controllably tailoring the properties by deforming the lattices of two-dimensional (2D) materials. Owing to the unbalanced electrostatic equilibrium among the dislocated atoms, the deformed lattice is thermodynamically unstable and would recover to the initial state. Here, we demonstrate that the recovery of deformed 2D lattices could be directly regulated via doping metal donors to reconstruct electrostatic equilibrium. Compared with the methods that employed external force fields with intrinsic instability and nonuniformity, the stretched 2D molybdenum diselenide (MoSe2) could be uniformly retained and permanently preserved via doping metal atoms with more outermost electrons and smaller electronegativity than Mo. We believe that the proposed strategy could open up a new avenue in directly regulating the atomic-thickness lattice and promote its practical applications based on 2D crystals.

Interfacial Engineering Determines Band Alignment and Steers Charge Separation and Recombination at an Inorganic Perovskite Quantum Dot/WS2 Junction: A Time Domain Ab Initio Study

Using time-domain density functional theory and nonadiabatic (NA) molecular dynamics, we demonstrate that interfacial interaction between WS₂ and CsPbBr₃ quantum dots (QDs) determines the band alignment, leading to a type-II and type-I heterojunction for the WS₂ contacting with Cs/Br- and PbBr₂-terminated facet QD, respectively. In the type-II heterojunction, electron transfer is faster than hole transfer arising due to the stronger NA coupling, higher density of electron acceptor states, and more and higher phonon modes involved. Both the electron and hole transfer times are subpicosecond, in agreement with experiments. The energy lost by the electron and hole is slower than charge transfer by several times, facilitating keeping charge carriers sufficiently "hot". Particularly, the electron-hole recombination occurs over 1 ns, favoring a long-lived charge-separated state. Detailed atomistic insights into the photoinduced charge and energy dynamics at the WS₂/QD interface provide valuable guidelines for improving performance of perovskite/transition-metal dichalcogenide solar cells.

Double-Exchange Magnetic Interactions in High-Temperature Ferromagnetic Iron Chalcogenide Monolayers

Smythite ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub><mml:mrow><mml:mi>F</mml:mi> <mml:mi>e</mml:mi></mml:mrow> <mml:mn>3</mml:mn></mml:msub> <mml:msub><mml:mi>S</mml:mi> <mml:mn>4</mml:mn></mml:msub> </mml:mrow> </mml:math> ) is an iron-based chalcogenide with a lamellar structure, different from the compositionally identical mineral greigite. Owing to their natural abundance, such transition metal chalcogenides are promising materials for low-cost spintronic-based devices. Herein, we discuss the charge transfer processes and complex magnetic ordering in a two-dimensional (2D) smythite lattice. We find that <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> <mml:mo>/</mml:mo> <mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>3</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> </mml:mrow> </mml:math> redox couple and complex magnetic ordering are governing factors in the charge transfer processes. A very strong ferromagnetic in-lattice coupling is also observed, which is attributed to the presence of three Fe-centres. To describe the magnetic behaviour molecular and periodic approaches have been considered. We found a substantial increase in Curie temperature with applied mechanical stress due to opening of the double exchange interaction angle. We also observe an in-plane Jahn-Teller distortion, which is further confirmed by the spin-orbit counter plot. Our study thus provides an insight into the double exchange mechanism favoured by the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> <mml:mo>/</mml:mo> <mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>3</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> </mml:mrow> </mml:math> redox couple and results in a strong ferromagnetic ordering.

Atomic-Scale Structural Modification of 2D Materials

2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.

Controllable Growth of Graphene on Liquid Surfaces

Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology-rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self-adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary-free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self-assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed.

Zero-energy-state-oriented tunability of spin polarization in zigzag-edged bowtie-shaped graphene nanoflakes under an electric field

A comprehensive first-principles study of the correlation between zero-energy states and the tunability of the spin-selective semiconducting properties of zigzag-edged bowtie-shaped graphene nanoflakes under an electric field is presented for the first time. We demonstrate that the spin degenerate semiconducting ground state can be lifted by the electric field. In particular, we find that the number of zero-energy states ('the nullity') defined by the structural configuration determines the complexity and efficiency of the tunability of spin polarization. The fine-tuning of spin-dependent properties by the electric field originates from the manipulation of spin-polarized molecular orbital energies. We expect this study to aid the design of more effective and controllable low-dimensional molecular spintronics.

Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials

Electrically-transduced sensors, with their simplicity and compatibility with standard electronic technologies, produce signals that can be efficiently acquired, processed, stored, and analyzed. Two dimensional (2D) nanomaterials, including graphene, phosphorene (BP), transition metal dichalcogenides (TMDCs), and others, have proven to be attractive for the fabrication of high-performance electrically-transduced chemical sensors due to their remarkable electronic and physical properties originating from their 2D structure. This review highlights the advances in electrically-transduced chemical sensing that rely on 2D materials. The structural components of such sensors are described, and the underlying operating principles for different types of architectures are discussed. The structural features, electronic properties, and surface chemistry of 2D nanostructures that dictate their sensing performance are reviewed. Key advances in the application of 2D materials, from both a historical and analytical perspective, are summarized for four different groups of analytes: gases, volatile compounds, ions, and biomolecules. The sensing performance is discussed in the context of the molecular design, structure-property relationships, and device fabrication technology. The outlook of challenges and opportunities for 2D nanomaterials for the future development of electrically-transduced sensors is also presented.

Resistive switching behavior in α-In2Se3 nanoflakes modulated by ferroelectric polarization and interface defects

Resistive switching devices based on ferroelectric two-dimensional (2D) van der Waals (vdW) nanomaterials may display simple structures, high density, high speed, and low power consumption, and can be used in flexible electronics and highly integrated devices. However, only a few studies about the in-plane (IP) resistive switching behavior of ferroelectric 2D vdW nanomaterials have been reported because it is very hard to achieve asymmetric barriers only by tuning the IP polarization directions when the electrodes of the planar device are all of the same type. In the current work, we developed a planar device based on an α-In₂Se₃ nanoflake, in which the IP/OOP (out-of-plane) polarization, free carriers and oxygen vacancies in SiO₂ contribute to the resistive switching behavior of the device. This behavior of the device was shown to be affected by exposure to light, and the photoelectric performance was also investigated when the device was in the OFF state. The demonstration of this planar resistive switching device may promote the further development of resistive devices based on 2D vdW nanomaterials, and provide great inspiration for the development of new kinds of transistors.

A planar device based on an α-In₂Se₃ nanoflake, in which the in-plane/out-of-plane polarization, free carriers and oxygen vacancies in SiO₂ contribute to the resistive switching behavior of the device.

Synergistic additive-mediated CVD growth and chemical modification of 2D materials

This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.

Engineering 2D Architectures toward High-Performance Micro-Supercapacitors

The rise of micro-supercapacitors is satisfying the demand for power storage in portable devices and wireless gadgets. But the miniaturization of the energy-storage components is significantly limited by their energy density. Electrode materials with adequate electrochemical active surfaces are therefore required for improving performance. 2D materials with ultralarge specific surface areas offer a broad portfolio of the development of high-performance micro-supercapacitors in spite of their several critical drawbacks. An architecture engineering strategy is therefore developed to break these natural limits and maximize the significant advantages of these materials. Based on the approaches of phase transformation, intercalation, surface modification, material hybridization, and hierarchical structuration, 2D architectures with improved conductivity, enlarged specific surface, enhanced redox activity, as well as the unique synergetic effect exhibit great promise in the application of miniaturized supercapacitors with highly enhanced performance. Herein, the architecture engineering of emerging 2D materials beyond graphene toward optimizing the performance of micro-supercapacitors is discussed, in order to promote the application of 2D architectures in miniaturized energy-storage devices.

SbSI whisker/PbI2 flake mixed-dimensional van der Waals heterostructure for photodetection

Mixed-dimensional van der Waals heterostructure formed from an individual SbSI whisker and individual PbI₂ flake for photodetection.

Phase transformation in two-dimensional covalent organic frameworks under compressive loading

As a new class of two-dimensional (2D) materials, 2D covalent organic frameworks (COFs) are proven to possess remarkable electronic and magnetic properties. However, their mechanical behaviours remain almost unexplored. In this work, taking the recently synthesised dimethylmethylene-bridged triphenylamine (DTPA) sheet as an example, we investigate the mechanical behaviours of 2D COFs based on molecular dynamics simulations together with density functional theory calculations. A novel phase transformation is observed in DTPA sheets when a relatively large in-plane compressive strain is applied to them. Specifically, the crystal structures of the transformed phases are topographically different when the compressive loading is applied in different directions. The compression-induced phase transformation in DTPA sheets is attributed to the buckling of their kagome lattice structures and is found to have significant impacts on their material properties. After the phase transformation, Young's modulus, band gap and thermal conductivity of DTPA sheets are greatly reduced and become strongly anisotropic. Moreover, a large in-plane negative Poisson's ratio is found in the transformed phases of DTPA sheets. It is expected that the results of the compression-induced phase transformation and its influence on the material properties observed in the present DTPA sheets can be further extended to other 2D COFs, since most 2D COFs are found to possess a similar kagome lattice structure.

Graphene and Other 2D Layered Hybrid Nanomaterial-Based Films: Synthesis, Properties, and Applications

This Special Issue contains a series of reviews and research articles demonstrating actual perspectives and future trends of 2D-based materials for the generation of functional films, coatings, and hybrid interfaces with controlled morphology and structure.

Antimonene: From Experimental Preparation to Practical Application

The two-dimensional material antimonene was first reported in 2015. Subsequently, its unique properties, including enhanced stability, high carrier mobility, and band-gap tunability, were predicted theoretically. These theoretical results have motivated experimental confirmation and thus a better understanding of this new material. Recently, the preparation of antimonene and its attempted use in several applications have attracted extensive attention. This Minireview focuses on both the experimental preparation and practical applications of antimonene, including the results of recent research on novel methods of preparing antimonene and its potential applications in optoelectronic devices, electrocatalysis, energy storage, and cancer therapy. Moreover, it provides insight that could further improve the preparation of antimonene and also describes numerous opportunities for application.

An Insight into the Phase Transformation of WS2 upon Fluorination

The transformation from semiconducting to metallic phase, accompanied by a structural transition in 2D transition metal dichalcogenides has attracted the attention of the researchers worldwide. The unconventional structural transformation of fluorinated WS₂ (FWS₂ ) into the 1T phase is described. The energy difference between the two phases debugs this transition, as fluorination enhances the stability of 1T FWS₂ and makes it energetically favorable at higher F concentration. Investigation of the electronic and optical nature of FWS₂ is supplemented by possible band structures and bandgap calculations. Magnetic centers in the 1T phase appear in FWS₂ possibly due to the introduction of defect sites. A direct consequence of the phase transition and associated increase in interlayer spacing is a change in friction behavior. Friction force microscopy is used to determine this effect of functionalization accompanied phase transformation.

Tunable band gap of graphyne-based homo- and hetero-structures by stacking sequences, strain and electric field

A comprehensive investigation was carried out on graphyne/graphyne (Gyne/Gyne), graphyne-like BN/graphyne-like BN (BNyne/BNyne) and graphyne/graphyne-like BN (Gyne/BNyne) bilayer structures using van der Waals (vdW)-corrected density functional theory. These bilayers exhibited distinct stacking-dependent characteristics in their ground state electronic structure and also had different responses to external strain and a vertical electric field. For the Gyne/Gyne and Gyne/BNyne bilayers, the application of biaxial tensile strain led to an increase in the band gap, while the application of biaxial compressive strain in addition to uniaxial strain, either under tension or compression, induced a reduction in the band gap. However, in the case of the BNyne/BNyne bilayer, the application of biaxial tensile strain led to a decrease in the band gap, but an increase in the band gap occurred under biaxial compressive strain, which could be explained by a change in the ionic nature of the B-N bonds. Under a vertical electric field, the band gaps of the homo-bilayers (Gyne/Gyne and BNyne/BNyne) decreased and were symmetrical. However, the hetero-bilayer (Gyne/BNyne) exhibited a decreased band gap under a positive electric field, but an almost constant band gap under a negative electric field. The physical origin of the band gap variation under an electric field was unraveled using energy-band theory. Our findings pave the way for experimental research and provide valuable insight into two-dimensional vdW layered structures for use in next generation flexible nanoelectronics and optoelectronic devices.

Cu dimer anchored on C2N monolayer: low-cost and efficient Bi-atom catalyst for CO oxidation

By means of density functional theory (DFT) computations, we systemically investigated CO/O2 adsorption and CO oxidation pathways on a bi-atom catalyst, namely, a copper dimer anchored on a C2N monolayer (Cu2@C2N), and we compared it with its monometallic counterpart Cu1@C2N. The Cu dimer could be stably embedded into the porous C2N monolayer. The reactions between the adsorbed O2 and CO via both bi-molecular and tri-molecular Langmuir-Hinshelwood (L-H) and Eley-Rideal (E-R) mechanisms were comparably studied, and we found that the bi-atom catalyst Cu2@C2N possessed superior performance toward CO oxidation as compared to the single-atom catalyst Cu1@C2N. Our comparative study suggested that the newly predicted bi-atom catalyst, i.e., a copper dimer anchored on a suitable support is highly active for CO oxidation, which can provide a useful guideline for further developing highly effective and low-cost green nanocatalysts.

Facile synthesis of highly conductive MoS2/graphene nanohybrids with hetero-structures as excellent microwave absorbers

Two-dimensional (2D) MoS₂/graphene nanosheet (MoS₂/GN) hybrids have been demonstrated to be promising microwave absorption (MA) materials due to their unique chemical and physical properties as well as rich impedance matching. However, the reported strategies for preparing MoS₂/GN hybrids have limited their application potential due to the complex, high-cost and inefficient preparation processes. On the other hand, it is of note that the main source of graphene is based on converting insulating graphene oxides (GO) back to conductive reduced graphene oxides (RGO). Thus, the MA performance of obtained MoS₂/RGO nanohybrids is greatly affected by the conversion process of GO. In this work, we prepared the MoS₂/GN hybrids by a facile hydrothermal method with directly introducing highly pure and electroconductive GNs. It is found that the highest reflection loss value of the sample-wax containing 40% MoS₂/GN is −57.31 dB at a thickness of 2.58 mm, and the bandwidth of RL values less than −10 dB can reach up to 12.28 GHz (from 5.72 to 18 GHz) when an appropriate absorber thickness between 1.5 and 4 mm is chosen. The excellent MA performances emanate from effective conjugation of MoS₂ with GN (Mo–C bond between the interfaces), which provides the dielectric loss caused by multi-relaxation, conductance, and polarization. Taking into account the facile synthesis route and their excellent MA performance, the MoS₂/GNs hybrid nanosheets and those composite materials with similar isomorphic hetero-structures are very promising for a wide range of MA applications.

Two-dimensional (2D) MoS₂/graphene nanosheet (MoS₂/GN) hybrids have been demonstrated to be promising microwave absorption (MA) materials due to their unique chemical and physical properties as well as rich impedance matching.