Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

Approaching Charge Separation Efficiency to Unity without Charge Recombination

Improving the efficiency of charge separation (CS) and charge transport (CT) is essential for almost all optoelectronic applications, yet its maximization remains a big challenge. Here we propose a conceptual strategy to achieve CS efficiency close to unity and simultaneously avoid charge recombination (CR) during CT in a ferroelectric polar-discontinuity (PD) superlattice structure, as demonstrated in (BaTiO_{3})_{m}/(BiFeO_{3})_{n}, which is fundamentally different from the existing mechanisms. The competition of interfacial dipole and ferroelectric PD induces opposite band bending in BiFeO_{3} and BaTiO_{3} sublattices. Consequently, the photoexcited electrons (e) and holes (h) in individual sublattices move forward to the opposite interfaces forming electrically isolated e and h channels, leading to a CS efficiency close to unity. Importantly, the spatial isolation of conduction channels in (BaTiO_{3})_{m}/(BiFeO_{3})_{n} enable suppression of CR during CT, thus realizing a unique band diagram for spatially orthogonal CS and CT. Remarkably, (BaTiO_{3})_{m}/(BiFeO_{3})_{n} can maintain a high photocurrent and large band gap simultaneously. Our results provide a fascinating illumination for designing artificial heterostructures toward ideal CS and CT in optoelectronic applications.

An Overview of the Recent Progress in Polymeric Carbon Nitride Based Photocatalysis

Recently, polymeric carbon nitride (g-C₃ N₄ ) as a proficient photo-catalyst has been effectively employed in photocatalysis for energy conversion, storage, and pollutants degradation due to its low cost, robustness, and environmentally friendly nature. The critical review summarized the recent development, fundamentals, nanostructures design, advantages, and challenges of g-C₃ N₄ (CN), as potential future photoactive material. The review also discusses the latest information on the improvement of CN-based heterojunctions including Type-II, Z-scheme, metal/CN Schottky junctions, noble metal@CN, graphene@CN, carbon nanotubes (CNTs)@CN, metal-organic frameworks (MOFs)/CN, layered double hydroxides (LDH)/CN heterojunctions and CN-based heterostructures for H₂ production from H₂ O, CO₂ conversion and pollutants degradation in detail. The optical absorption, electronic behavior, charge separation and transfer, and bandgap alignment of CN-based heterojunctions are discussed elaborately. The correlations between CN-based heterostructures and photocatalytic activities are described excessively. Besides, the prospects of CN-based heterostructures for energy production, storage, and pollutants degradation are discussed.

Chiral Liquid Crystalline Electronic Systems

Liquid crystals bearing extended π-conjugated units function as organic semiconductors and liquid crystalline semiconductors have been studied for their applications in light-emitting diodes, field-effect transistors, and solar cells. However, studies on electronic functionalities in chiral liquid crystal phases have been limited so far. Electronic charge carrier transport has been confirmed in chiral nematic and chiral smectic C phases. In the chiral nematic phase, consisting of molecules bearing extended π-conjugated units, circularly polarized photoluminescence has been observed within the wavelength range of reflection band. Recently, circularly polarized electroluminescence has been confirmed from devices based on active layers of chiral conjugated polymers with twisted structures induced by the molecular chirality. The chiral smectic C phase of oligothiophene derivatives is ferroelectric and indicates a bulk photovoltaic effect, which is driven by spontaneous polarization. This bulk photovoltaic effect has also been observed in achiral polar liquid crystal phases in which extended π-conjugated units are properly assembled. In this manuscript, optical and electronic functions of these chiral π-conjugated liquid crystalline semiconductors are reviewed.

In situ X-ray diffraction investigation of electric-field-induced switching in a hybrid improper ferroelectric

This article reports the first in situ diffraction result collected under applied electric field on a hybrid improper ferroelectric which shows a subtle yet robust preference for a switching mechanism that proceeds via an unwinding of the octahedral rotation mode.

Improper ferroelectric mechanisms are increasingly under investigation for their potential to expand the current catalogue of functional materials whilst promoting couplings between ferroelectricity and other technologically desirable properties such as ferromagnetism. This work presents the results of an in situ synchrotron X-ray diffraction experiment performed on samples of Ca_2.15Sr_0.85Ti₂O₇ in an effort to elucidate the mechanism of hybrid improper ferroelectric switching in this compound. By simultaneously applying an electric field and recording diffraction patterns, shifts in the intensity of superstructure peaks consistent with one of the switching mechanisms proposed by Nowadnick & Fennie [Phys. Rev. B, (2016), 94, 104105] are observed. While the experiment only achieves a partial response, comparison with simulated data demonstrates a preference for a one-step switching mechanism involving an unwinding of the octahedral rotation mode in the initial stages of switching. These results represent some of the first reported experimental diffraction-based evidence for a switching mechanism in an improper ferroelectric.

A Design Principle for Polar Assemblies with C3 -Sym Bowl-Shaped π-Conjugated Molecules

Polar materials attract wide research interest due to their unique properties, such as ferroelectricity and the bulk photovoltaic effect (BPVE), which are not accessible with nonpolar materials. However, in general, rationally designing polar materials is difficult because nonpolar materials are more favorable in terms of dipole-dipole interactions. Here, we report a rational strategy to form polar assemblies with bowl-shaped π-conjugated molecules and a molecular design principle for this strategy. We synthesized and thoroughly characterized 12 single crystals with the help of various theoretical calculations. Furthermore, we demonstrated that it can be possible to predict whether polar assemblies become more favorable or not by estimating their lattice energies. We believe that this study contributes to the development of organic polar materials and their related studies.

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The "diode-like" currents through the symmetric atomic layer deposited (ALD) HfO₂/Al₂O₃/HfO₂… nanolayers with a highest rectification coefficient 10³ are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al₂O₃ thickness values of 8-10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100-120 cm²/(V s) and interface states (IFS) density 1.2 × 10¹¹ cm^-2 are obtained for the n-p SIS structures with insulator HfO₂:Al₂O₃ (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2-1.3 V at the gate voltage |V_g| < ±2.5 V is maintained in the RTA treatment at T = 800-900 °C for these transistors.

Interface-induced transition from Schottky-to-Ohmic contact in Sc2CO2-based multiferroic heterojunctions

In order to achieve a multiferroic heterojunction with a low resistance contact, we investigated a series of Sc2CO2-based van der Waals (vdW) multiferroic heterojunctions in which the ferromagnetics (1T-MnSe2, 1T-VSe2, and 1T-VTe2) were selected as the contact electrodes in terms of first-principles calculations. By reversing the polarization state of Sc2CO2 from Sc-P↑ to Sc-P↓, we found that the heterojunctions converted from Schottky-to-Ohmic contact. Moreover, this conversion, accompanied by an interface charge transfer is intrinsic and is not regulated by the interlayer spacing and biaxial strain. This work provides an avenue for the design of two-dimensional Sc2CO2-based multiferroic electronics in the future.

A lead-free bismuth iodide organic-inorganic ferroelectric semiconductor

Organic-inorganic metal halide ferroelectric semiconductors are mainly lead halide ones, suffering from the presence of toxic lead. Herein, we report a lead-free bismuth iodide ferroelectric semiconductor [1,4-butanediammonium]BiI5, showing a high Curie temperature of 365 K and a small band gap of 1.95 eV, smaller than those of most lead halide counterparts.

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions

In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.

Tailoring of a visible-light-absorbing biaxial ferroelectric towards broadband self-driven photodetection

In terms of strong light-polarization coupling, ferroelectric materials with bulk photovoltaic effects afford a promising avenue for optoelectronic devices. However, due to severe polarization deterioration caused by leakage current of photoexcited carriers, most of ferroelectrics are merely capable of absorbing 8-20% of visible-light spectra. Ferroelectrics with the narrow bandgap (<2.0 eV) are still scarce, hindering their practical applications. Here, we present a lead-iodide hybrid biaxial ferroelectric, (isopentylammonium)₂(ethylammonium)₂Pb₃I₁₀, which shows large spontaneous polarization (~5.2 μC/cm²) and a narrow direct bandgap (~1.80 eV). Particularly, the symmetry breaking of 4/mmmFmm2 species results in its biaxial attributes, which has four equivalent polar directions. Accordingly, exceptional in-plane photovoltaic effects are exploited along the crystallographic [001] and [010] axes directions inside the crystallographic bc-plane. The coupling between ferroelectricity and photovoltaic effects endows great possibility toward self-driven photodetection. This study sheds light on future optoelectronic device applications.

Ultrasound-Induced Wireless Energy Harvesting: From Materials Strategies to Functional Applications

Wireless energy harvesting represents an emerging technology that can be integrated into a variety of systems for biomedical, physical, and chemical functions. The miniaturization and ease of implementation are the main challenges for the development of wireless energy harvesting systems. Unlike most reported wireless energy harvesting technologies represented by electromagnetic coupling, the new generation of ultrasound-induced wireless energy harvesting (UWEH) that use propagating ultrasound waves to carry the available energy provides a strategy with higher resolution, deeper penetration, and more security, especially in nanodevices and implantable medical systems where a long-term stable power is required. Recently, advances in nanotechnologies, microelectronics, and biomedical systems are revolutionizing UWEH. In this article, an overview of recent developments in UWEH technologies that use a variety of material strategies and system designs based on the piezoelectric and capacitive energy harvesting mechanisms is provided. Practical applications are also presented, including wireless power for bio-implantable devices, direct cell/tissue electrical stimulations, wireless recording and communication in nervous systems, ultrasonic modulated drug delivery, self-powered acoustic sensors, and ultrasound-induced piezoelectric catalysis. Finally, perspectives and opportunities are also highlighted.

Dynamically controllable terahertz metamaterial based on annealed and unannealed BiFeO3 thin film on Si

We theoretically and experimentally study a terahertz metamaterial based on a hybrid metamaterial/BFO/Si structure, where the BFO thin films are annealed and unannealed, respectively. Due to the interaction or hybridization of two resonators, an obvious plasma-induced transparency effect can be obtained in the transmission spectra. With increasing the external optical pumping power, the transparency peak modulation depth of the annealed hybrid sample is about 45% while the unannealed hybrid sample is almost zero. The annealing treatment has a significant effect on the modulation through investigating the photoconductivity of the BFO thin films. The photogenerated carriers suppress the resonances of the two bright modes, thus the transparency peak of the metamaterial is disappeared. This work is a further step forward in practical applications of BFO-based terahertz functional devices and a path for exploration of multiferroic material BiFeO₃ in the terahertz range.

The Experimentalist's Guide to the Cycloid, or Noncollinear Antiferromagnetism in Epitaxial BiFeO3

Bismuth ferrite (BiFeO₃ ) is one of the most widely studied multiferroics. The coexistence of ferroelectricity and antiferromagnetism in this compound has driven an intense search for electric-field control of the magnetic order. Such efforts require a complete understanding of the various exchange interactions that underpin the magnetic behavior. An important characteristic of BiFeO₃ is its noncollinear magnetic order; namely, a long-period incommensurate spin cycloid. Here, the progress in understanding this fascinating aspect of BiFeO₃ is reviewed, with a focus on epitaxial films. The advances made in developing the theory used to capture the complexities of the cycloid are first chronicled, followed by a description of the various experimental techniques employed to probe the magnetic order. To help the reader fully grasp the nuances associated with thin films, a detailed description of the spin cycloid in the bulk is provided. The effects of various perturbations on the cycloid are then described: magnetic and electric fields, doping, epitaxial strain, finite size effects, and temperature. To conclude, an outlook on possible device applications exploiting noncollinear magnetism in BiFeO₃ films is presented. It is hoped that this work will act as a comprehensive experimentalist's guide to the spin cycloid in BiFeO₃ thin films.

Regulation of Ferroelectric Polarization to Achieve Efficient Charge Separation and Transfer in Particulate RuO2 /BiFeO3 for High Photocatalytic Water Oxidation Activity

Exploiting spontaneous polarization of ferroelectric materials to achieve high charge separation efficiency is an intriguing but challenging research topic in solar energy conversion. This work shows that loading high work function RuO₂ cocatalyst on BiFeO₃ (BFO) nanoparticles enhances the intrinsic ferroelectric polarization by efficient screening of charges to RuO₂ via RuO₂ /BFO heterojunction. This leads to enhancement of the surface photovoltage of RuO₂ /BFO single nanoparticles nearly 3 times, the driving force for charge separation and transfer in photocatalytic reactions. Consequently, efficient photocatalytic water oxidation is achieved with quantum efficiency as high as 5.36 % at 560 nm, the highest activity reported so far for ferroelectric materials. This work demonstrates that, unlike low photocurrent density in film-based ferroelectric devices, high photocatalytic activity could be achieved by regulating the ferroelectric spontaneous polarization using appropriate cocatalyst to enhance driving force for efficient separation and transfer of photogenerated charges in particulate ferroelectric semiconductor materials.

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

The coexistence of large conductivity and robust ferroelectricity is promising for high-performance ferroelectric devices based on polarization-controllable highly efficient carrier transport. Distinct from traditional perovskite ferroelectrics, Bi₂ WO₆ with a layered structure shows a great potential to preserve its ferroelectricity under substantial electron doping. Herein, by artificial design of photosensitive heterostructures with desired band alignment, three orders of magnitude enhancement of the short-circuit photocurrent is achieved in Bi₂ WO₆ /SrTiO₃ at room temperature. The microscopic mechanism of this large photocurrent originates from separated transport of electrons and holes in [WO₄ ]^-2 and [Bi₂ O₂ ]⁺² layers respectively with a large in-plane conductivity, which is understood by a combination of ab initio calculations and spectroscopic measurements. The layered electronic structure and appropriately designed band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high-performance and nonvolatile switchable electronic devices.

Template-free fabrication of BiFeO3 nanorod arrays: multiferroic and photo-electrochemical performances

BiFeO₃ (BFO) has been widely investigated in many forms and morphologies because of its combined multiferroic and photovoltaic properties. However, direct growth of vertically aligned BFO nanorods on an underlying substrate has remained a challenge. In this work, we report template free growth of BiFeO₃ nanorod arrays on fluorine doped tin oxide coated glass substrate. This has been achieved by a two-step process, in which FeOOH nanorods are grown by chemical bath deposition and converted into BFO using bismuth (Bi) coating by physical vapour deposition (PVD). Both DC sputtering and thermal evaporation are attempted under PVD and the results suggest that Bi deposited by DC sputtering leads to well-defined BFO nanorods, which show superior performance in both multiferroic and photoelectrochemical studies. Piezoelectric force microscopy data shows the signature butterfly loop that confirms piezoelectric behaviour with a d ₃₃ value of 8 pmV^-1 in the BFO nanorods grown by DC sputtering. Further, the M-H hysteresis curve for the same samples reveals a remanent magnetization (M_r) value of 0.54 emu cc^-1 and antiferromagnetic nature at room temperature. Finally, a stable photocurrent density of 0.05 mA cm^-2 is achieved at 0.8 V vs Ag/AgCl under 1 Sun illumination. This work opens up new avenues for BFO in applications involving 1D nanostructures.

Exploring Light Polarization Effects of Photovoltaic Actions in Organic-Inorganic Hybrid Perovskites with Asymmetric and Symmetric Unit Structures

Hybrid perovskites are known as electrically polarizable semiconductors based on theoretical prediction and experimental information. Here we show the light polarization effects on the photovoltaic actions in perovskite solar cells by optically generating directional and random electronic transition dipoles within asymmetric and symmetric unit structures. In an asymmetric tetragonal unit structure, we observed the stripes with different orientations onto perovskite grains and that the randomly polarized photoexcitation can generate a higher photocurrent (Jsc) by 6.5 ± 0.5% as compared to the linearly polarized photoexcitation at same intensity in the hysteresis-free perovskite solar cells [ITO/PEDOT:PSS/MAPbI₃/PC₆₁BM/PEI/Ag]. Clearly, switching the photoexcitation between linear and random polarizations leads to a ΔJsc, which provides an experimental indication that all-directional and one-directional transition dipoles generate higher and lower photocurrents in organic-inorganic hybrid perovskites (MAPbI₃) with an asymmetric tetragonal unit structure. This implies that all-directional and one-directional transition dipoles develop stronger and weaker dissociative interactions, consequently giving rise to more and less dissociation toward generating photocurrent. This is confirmed by the experimental observation that the ΔJsc almost disappears when the temperature increases up to 55 °C, where the asymmetric tetragonal structure is changed to a symmetric cubic structure. Furthermore, the ΔJsc is shown to decrease with increasing light intensity. This indicates that the electronic transition dipoles encounter a polarization relaxation caused by mutual interaction. We show that the polarization relaxation time in MAPbI₃ is comparable to exciton dissociation time (∼ps). This presents the necessary condition to demonstrate light polarization effects of photovoltaic actions in perovskite solar cells.

Enhanced Photovoltaic Performances of La-Doped Bismuth Ferrite/Zinc Oxide Heterojunction by Coupling Piezo-Phototronic Effect and Ferroelectricity

Ferroelectric materials have drawn widespread attention due to their switchable spontaneous polarization and anomalous photovoltaic effect. The coupling between ferroelectricity and the piezo-phototronic effect may lead to the design of distinctive photoelectric devices with multifunctional features. Here, we report an enhancement of the photovoltaic performances in the ferroelectric p-type La-doped bismuth ferrite film (BLFO)/n-type zinc oxide (ZnO) nanowire array heterojunction by rationally coupling the strain-induced piezoelectricity in ZnO nanowires and the ferroelectricity in BLFO. Under a compressive strain of -2.3% and a 10 V upward poling of the BLFO, the open-circuit voltage (V_OC) and short-circuit current density (J_SC) of the device increase by 8.4% and 54.7%, respectively. Meanwhile, the rise (/decay) time is modulated from 153.7 (/108.8) to 61.28 (/74.86) ms. Systematical band diagram analysis reveals that the promotion of photogenerated carriers and boost of the photovoltaic performances of the device can be attributed to the modulated carrier transport behaviors at the BLFO/ZnO interface and the superposed driving forces arising from the adding up of the piezoelectric potential and ferroelectric polarization. In addition, COMSOL simulation results of piezopotential distribution in ZnO nanowire arrays and the energy band structure change of the heterojunction further confirm the mechanisms. This work not only presents an approach to design high-performance ferroelectric photovoltaic devices but also further broadens the research scope of piezo-phototronics.

Unveiling the Fine Structural Distortion of Atomically Thin Bi2 O2 Se by Third-Harmonic Generation

Bismuth oxyselenide (Bi₂ O₂ Se), a new type of 2D material, has recently attracted increased attention due to its robust bandgap, stability under ambient conditions, and ultrahigh electron mobility. In such complex oxides, fine structural distortion tends to play a decisive role in determining the unique physical properties, such as the ferrorotational order, ferroelectricity, and magnetoelasticity. Therefore, an in-depth investigation of the fine structural symmetry of Bi₂ O₂ Se is necessary to exploit its potential applications. However, conventional techniques are either time consuming or requiring tedious sample treatment. Herein, a noninvasive and high-throughput approach is reported for characterizing the fine structural distortion in 2D centrosymmetric Bi₂ O₂ Se by polarization-dependent third-harmonic generation (THG). Unprecedentedly, the divergence between the experimental results and the theoretical prediction of the perpendicular component of polarization-dependent THG indicates a fine structural distortion, namely, a <1.4° rotation of the oxygen square in the tetragonal (Bi₂ O₂ ) layers. This rotation breaks the intrinsic mirror symmetry of 2D Bi₂ O₂ Se, eventually reducing the symmetry from the D_4h to the C_4h point group. The results demonstrate that THG is highly sensitive to even fine symmetry variations, thereby showing its potential to uncover hidden phase transitions and interacting polarized sublattices in novel 2D material systems.

Visible or Near-Infrared Light Self-Powered Photodetectors Based on Transparent Ferroelectric Ceramics

Transparent ferroelectrics, with promising prospects in transparent optoelectronic devices, have unique advantages in self-powered photodetection. The self-powered photodetectors based on the photovoltaic effect have quicker responses and higher stability compared with those based on the pyroelectric effect. However, the ferroelectric ceramics previously applied are always opaque and have no infrared light-stimulated photovoltaic effect. Thus, it would be very meaningful to design photodetectors based on infrared light-stimulated photovoltaic effect and/or transparent ferroelectric ceramics. In this work, highly optical transparent pristine lead lanthanum zirconate titanate (PLZT) and band gap-engineered Ni-doped PLZT ceramics with excellent piezoelectric/ferroelectric properties were prepared by hot-pressing sintering. Stable and excellent photovoltaic performance was obtained for pristine PLZT and band gap-engineered PLZT. The value of short-circuit current density is at least 2 orders of magnitude larger than those in PLZT reported in previous works. The transparent PLZT and Ni-doped PLZT ferroelectric ceramics are applied as self-powered photodetectors for the first time for 405 nm and near-infrared light, respectively. The devices based on PLZT under 405 nm light exhibit high detectivity (7.15 × 10⁷ Jones) and quick response (9.5 ms for rise and 11.5 ms for decay), and those devices based on Ni-doped PLZT, under near-infrared light filtered from AM 1.5 G simulated sunlight, also exhibit high detectivity (6.86 × 10⁷ Jones) and short response time (8.5 ms), both presenting great potential for future transparent photodetectors.

Multifunctional Bismuth Ferrite Nanocatalysts with Optical and Magnetic Functions for Ultrasound-Enhanced Tumor Theranostics

Ultrasound (US)-assisted oncotherapy has aroused extensive attention due to its capacities to conquer significant restrictions covering short tissue penetration depth and high phototoxicity in photoinduced therapy. We herein developed a class of pure-phase perovskite-type bimetallic oxide, namely, bismuth ferrite nanocatalysts (BFO NCs), for multimodality imaging-guided and US-enhanced chemodynamic therapy (CDT) against malignant tumors. As-prepared BFO nanoparticles with poly(ethylene glycol)-grafted phosphorylated serine (pS-PEG) modification exhibit satisfactory physiological stability and biocompatibility. The BFO NCs also present high fluorescence emission within the second near-infrared region when irradiated with an 808 nm laser. Intriguingly, the BFO NCs demonstrate highly efficient US-enhanced generation of hydroxyl free radicals, as the cavitation bubbles produced by US trigger partial grievous turbulence and promote the transfer rate of the Fenton reagents. Thus, the BFO NCs enable effective inhibition of tumor growth assisted by external US, and the treatment efficacy can be monitored by computer tomography, magnetic resonance, and fluorescence imaging. Meanwhile, H₂O₂ and US, as a double logic gate, activate the BFO NCs to trigger the iron-catalyzed and US-enhanced CDT with high specificity and treatment efficiency. Therefore, the BFO NCs as a theranostic agent with an enhanced chemodynamic therapeutic effect assisted by external US and a multimodality imaging capacity are put forward, which show a promising prospect for noninvasive chemodynamic oncotherapy.

An ultrathin two-dimensional vertical ferroelectric tunneling junction based on CuInP2S6 monolayer

Ferroelectric (FE) materials, especially ABO3 FE perovskite oxides, have been extensively studied for their important applications in memory devices, electronics and sensors. However, the integration of FE perovskite oxides into miniaturized memory and electronic devices has been impeded by the critical thickness limitation, as out-of-plane ferroelectricity in most FE perovskite oxides will disappear when the oxide thin film thickness is below a critical value. On the other side, CuInP2S6 (CIPS) nano-flake, a prototypical two-dimensional (2D) FE material, has recently been demonstrated to display stable out-of-plane ferroelectricity at the atomic layer thickness by experiment, which offers a new candidate for developing FE devices in the 2D nanoscale regime. Herein, after investigation of the structural and ferroelectric properties of 2D CIPS layers, especially the interactions between out-of-plane polarization and the corresponding depolarization field using first-principles calculations, we reveal that out-of-plane ferroelectricity can even persist in the CIPS monolayer, which is only 3.4 Å in thickness. Moreover, in order to explore the potential application of 2D FE CIPS layers as minimized FE devices, we design an ultrathin ferroelectric tunneling junction (FTJ) composed of a graphene/CIPS monolayer/graphene vertical van der Waals (vdW) heterostructure. Our transport simulations based on the non-equilibrium Green's function formalism predict that such an ultrathin FTJ device can still exhibit the typical tunneling electroresistance (TER) effect, where tunneling current strongly depends on the direction of FE polarization. Our work not only elucidates the origin of stable out-of-plane ferroelectricity appearing in 2D CIPS layers, but also demonstrates the practical application of a CIPS based 2D FTJ as a miniaturized, multi-functional and low-power consumption memory device for modern electronics.

Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect

Flexoelectricity induced by the strain gradient is attracting much attention due to its potential applications in electronic devices. Here, by combining a tunable flexoelectric effect and the ferroelectric photovoltaic effect, we demonstrate the continuous tunability of photoconductance in BiFeO3 films. The BiFeO3 film epitaxially grown on SrTiO3 is transferred to a flexible substrate by dissolving a sacrificing layer. The tunable flexoelectricity is achieved by bending the flexible substrate which induces a nonuniform lattice distortion in BiFeO3 and thus influences the inversion asymmetry of the film. Multilevel conductance is thus realized through the coupling between flexoelectric and ferroelectric photovoltaic effect in freestanding BiFeO3. The strain gradient induced multilevel photoconductance shows very good reproducibility by bending the flexible BiFeO3 device. This control strategy offers an alternative degree of freedom to tailor the physical properties of flexible devices and thus provides a compelling toolbox for flexible materials in a wide range of applications.

Investigation of Local Conduction Mechanisms in Ca and Ti-Doped BiFeO3 Using Scanning Probe Microscopy Approach

In this work we demonstrate the role of grain boundaries and domain walls in the local transport properties of n- and p-doped bismuth ferrites, including the influence of these singularities on the space charge imbalance of the energy band structure. This is mainly due to the charge accumulation at domain walls, which is recognized as the main mechanism responsible for the electrical conductivity in polar thin films and single crystals, while there is an obvious gap in the understanding of the precise mechanism of conductivity in ferroelectric ceramics. The conductivity of the Bi_0.95Ca_0.05Fe_1−xTi_xO_3−δ (x = 0, 0.05, 0.1; δ = (0.05 − x)/2) samples was studied using a scanning probe microscopy approach at the nanoscale level as a function of bias voltage and chemical composition. The obtained results reveal a distinct correlation between electrical properties and the type of charged defects when the anion-deficient (x = 0) compound exhibits a three order of magnitude increase in conductivity as compared with the charge-balanced (x = 0.05) and cation-deficient (x = 0.1) samples, which is well described within the band diagram representation. The data provide an approach to control the transport properties of multiferroic bismuth ferrites through aliovalent chemical substitution.

Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship with photovoltaic performance

Inorganic ferroelectric perovskite oxides are more stable than hybrid perovskites. However, their solar energy harvesting efficiency is not so good. Here, by constructing a series of BiFeO3-based devices (solar cells), we investigated three factors that influence the photovoltaic performance, namely, spontaneous polarization, terminated ion species in the interface between BiFeO3 and the electrode, and polarized light irradiation. This work was carried out under the framework of the density functional theory combined with the non-equilibrium Green's function theory under a built-in electric field or finite bias. The results showed that (1) the photocurrent is larger only under a suitable electronic band gap rather than larger spontaneous polarization; (2) the photocurrent reaches the largest value in the Bi3+ ion-terminated interface than in the case of Fe3+ or O2- with the SrTiO3 electrode; (3) the photocurrent can be largely enhanced if the polarized direction of the monochromatic light is perpendicular to the spontaneous polarization direction. These results would deepen the understanding of some experimental results of BiFeO3-based solar cells.

Electro-opto-mechano driven reversible multi-state memory devices based on photocurrent in Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT heterostructures

A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli (e.g. magnetic field, electric field, electric current, light, strain, etc.), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro-opto-mechano-driven reversible multi-state memory device based on photocurrent in Bi0.9Eu0.1FeO3 (BEFO)/La0.67Sr0.33MnO3 (LSMO)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructures. It is found that the short-circuit current density (J sc) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric-optical-mechanism integrated devices based on the BiFeO3-based heterostructures.

A review on the preparation, characterization and potential application of perovskites as adsorbents for wastewater treatment

Perovskite are among the popular materials utilized in many areas of modern industrialization because of their low price, high stability, excellent oxidation activity, adsorptive, catalytic, optical, magnetic, electronic and ferroelectric properties. Over the years, widespread usage of perovskite nanoparticles has been reported due to its various applications which include an environmental catalyst, fuel cells, chemical sensors, magnetic materials, oxygen permeable membranes and adsorbents for wastewater treatment. Various synthetic methods such as the sol-gel method, proteic method, Pechini method, combustion, co-precipitation, and chelating precursor method have been applied in producing perovskites. Therefore, this review assembles the current knowledge on the processes involved in the preparation of perovskites, their characterizations and potential applications in wastewater treatment. Challenges and future opportunities of perovskite-based materials are discussed as well as obstacles against their extensive uses. Conclusions have also been drawn proposing a few suggestions for future research.

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO₃ films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harvesters. A bi-metal mixture that is composed of Bi(phenyl)₃, and Fe(tmhd)₃ has been used as a precursor source. BiFeO₃ films have been grown by MOCVD on IrO₂/Si substrates, in which the conductive IrO₂ functions as a bottom electrode and a buffer layer. BiFeO₃ films have been analyzed by X-ray diffraction (XRD) for structural characterization and by field-emission scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray (EDX) analysis for the morphological and chemical characterizations, respectively. These studies have shown that the deposited films are polycrystalline, pure BiFeO₃ phase highly homogenous in morphology and composition all over the entire substrate surface. Piezoelectric force microscopy (PFM) and Piezoelectric Force Spectroscopy (PFS) checked the piezoelectric and ferroelectric properties of the film.

Structure, Performance, and Application of BiFeO3 Nanomaterials

Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.

Maximizing Short Circuit Current Density and Open Circuit Voltage in Oxygen Vacancy-Controlled Bi1-xCaxFe1-yTiyO3-δ Thin-Film Solar Cells

Designing solid-state perovskite oxide solar cells with large short circuit current (J_SC) and open circuit voltage (V_OC) has been a challenging problem. Epitaxial BiFeO₃ (BFO) films are known to exhibit large V_OC (>50 V). However, they exhibit low J_SC (≪μA/cm²) under 1 Sun illumination. In this work, taking polycrystalline BiFeO₃ thin films, we demonstrate that oxygen vacancies (V_O) present within the lattice and at grain boundary (GB) can explicitly be controlled to achieve high J_SC and V_OC simultaneously. While aliovalent substitution (Ca²⁺ at Bi³⁺ site) is used to control the lattice V_O, Ca and Ti cosubstitution is used to bring out only GB-V_O. Fluorine-doped tin oxide (FTO)/Bi_1-xCa_xFe_1-yTi_yO_3-δ/Au devices are tested for photovoltaic characteristics. Introducing V_O increases the photocurrent by four orders (J_SC ∼ 3 mA/cm²). On the contrary, V_OC is found to be <0.5 V, as against 0.5-3 V observed for the pristine BiFeO₃. Ca and Ti cosubstitution facilitate the formation of smaller crystallites, which in turn increase the GB area and thereby the GB-V_O. This creates defect bands occupying the bulk band gap, as inferred from the diffused reflection spectra and band structure calculations, leading to a three-order increase in J_SC. The cosubstitution, following a charge compensation mechanism, decreases the lattice V_O concentration significantly to retain the ferroelectric nature with enhanced polarization. It helps to achieve V_OC (3-8 V) much larger than that of BiFeO₃ (0.5-3 V). It is noteworthy that as Ca substitution maintains moderate crystallite size, the lattice V_O concentration dominates GB-V_O concentration. Notwithstanding, both lattice and GB-V_O contribute to the increase in J_SC; the former weakens ferroelectricity, and as a consequence, undesirably, V_OC is lowered well below 0.5 V. Using optimum J_SC and V_OC, we demonstrate that the efficiency ∼0.22% can be achieved in solid-state BFO solar cells under AM 1.5 one Sun illumination.

Strain-induced structural phase transition, electric polarization and unusual electric properties in photovoltaic materials CsMI3 (M = Pb, Sn)

The structural phase transition, ferroelectric polarization, and electric properties have been investigated for photovoltaic films CsMI3 (M = Pb, Sn) epitaxially grown along (001) direction based on the density functional theory. The calculated results indicate that the phase diagrams of two epitaxial CsPbI3 and CsSnI3 films are almost identical, except critical transition strains varying slightly. The epitaxial tensile strains induce two ferroelectric phases Pmc21, and Pmn21, while the compressive strains drive two paraelectric phases P212121, P21212. The larger compressive strain enhances the ferroelectric instability in these two films, eventually rendering them another ferroelectric state Pc. Whether CsPbI3 or CsSnI3, the total polarization of Pmn21 phase comes from the main contribution of B-position cations (Pb or Sn), whereas, for Pmc21 phase, the main contributor is the I ion. Moreover, the epitaxial strain effects on antiferrodistortive vector, polarization and band gap of CsMI3 (M = Pb, Sn) are further discussed. Unusual electronic properties under epitaxial strains are also revealed and interpreted.

A highly CMOS compatible hafnia-based ferroelectric diode

Memory devices with high speed and high density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf_0.5Zr_0.5O₂ films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of Hf_0.5Zr_0.5O₂ film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca2₁ orthorhombic phase in Hf_0.5Zr_0.5O₂ film. We further implemented this ferroelectric diode in an 8 layers 3D array. Operation speed as high as 20 ns and robust endurance of more than 10⁹ were demonstrated. The built-in nonlinearity of more than 100 guarantees its self-selective property that eliminates the need for external selectors to suppress the leakage current in large array. This work opens up new opportunities for future memory hierarchy evolution.

Designing reliable, scalable and high speed computing systems remains a challenge. Here, the authors identify noncentrosymmetric orthorhombic phase in HZO film and demonstrate a CMOS compatible 3D Vertical HZO-based ferroelectric diode array with self-selective property and 20 ns of speed operation.