201
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Qiu G, Zhang P, Deng P, Chong SK, Tai L, Eckberg C, Wang KL. Mesoscopic Transport of Quantum Anomalous Hall Effect in the Submicron Size Regime. PHYSICAL REVIEW LETTERS 2022; 128:217704. [PMID: 35687463 DOI: 10.1103/physrevlett.128.217704] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2021] [Accepted: 05/09/2022] [Indexed: 06/15/2023]
Abstract
The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understanding of mesoscopic transport in submicron QAH devices has not yet been established. Here we fabricated miniaturized QAH devices with channel widths down to 600 nm, where the QAH features are still preserved. A backscattering channel is formed in narrow QAH devices through percolative hopping between 2D compressible puddles. Large resistance fluctuations are observed in narrow devices near the coercive field, which is associated with collective interference between intersecting paths along domain walls when the device geometry is smaller than the phase coherence length L_{ϕ}. Through measurement of size-dependent breakdown current, we confirmed that the chiral edge states are confined at the physical boundary with its width on the order of Fermi wavelength.
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Affiliation(s)
- Gang Qiu
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA
| | - Peng Zhang
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA
| | - Peng Deng
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA
| | - Su Kong Chong
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA
| | - Lixuan Tai
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA
| | - Christopher Eckberg
- Fibertek Inc., Herndon, Virginia 20171, USA
- DEVCOM Army Research Laboratory, Adelphi, Maryland 20783, USA
- DEVCOM Army Research Laboratory, Playa Vista, California 90094, USA
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, California 90095, USA
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202
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Agrawal A, Bandyopadhyay JN. Floquet topological phases with high Chern numbers in a periodically driven extended Su-Schrieffer-Heeger model. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:305401. [PMID: 35545082 DOI: 10.1088/1361-648x/ac6eac] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Accepted: 05/11/2022] [Indexed: 06/15/2023]
Abstract
The high Chern number phases with the Chern number |C| > 1 are observed in this study of a periodically driven extended Su-Schrieffer-Heeger (E-SSH) model with a cyclic parameter. Besides the standard intra-dimer and the nearest-neighbor inter-dimer hopping of the SSH model, an additional next-nearest-neighbor hopping is considered in the E-SSH model. The cyclic parameter, which plays the role of a synthetic dimension, is invoked as a modulation of the hopping strengths. A rigorous analysis of different phase diagrams has shown multiple Floquet topological phase transitions among the high Chern number phases. These phase transitions can be controlled by the strength and frequency of the periodic driving. Instead of applying perturbation theory, the whole analysis is done by Floquet replica technique. This gives a freedom to study high as well as low-frequency effects on the system by considering less or more number of photon sectors. This system can be experimentally realized through a pulse sequence scheme in the optical lattice setup.
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Affiliation(s)
- Aayushi Agrawal
- Department of Physics, Birla Institute of Technology and Science, Pilani 333031, India
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203
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 87] [Impact Index Per Article: 43.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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204
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Observation of chiral and slow plasmons in twisted bilayer graphene. Nature 2022; 605:63-68. [PMID: 35508778 DOI: 10.1038/s41586-022-04520-8] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Accepted: 02/04/2022] [Indexed: 11/08/2022]
Abstract
Moiré superlattices have led to observations of exotic emergent electronic properties such as superconductivity and strong correlated states in small-rotation-angle twisted bilayer graphene (tBLG)1,2. Recently, these findings have inspired the search for new properties in moiré plasmons. Although plasmon propagation in the tBLG basal plane has been studied by near-field nano-imaging techniques3-7, the general electromagnetic character and properties of these plasmons remain elusive. Here we report the direct observation of two new plasmon modes in macroscopic tBLG with a highly ordered moiré superlattice. Using spiral structured nanoribbons of tBLG, we identify signatures of chiral plasmons that arise owing to the uncompensated Berry flux of the electron gas under optical pumping. The salient features of these chiral plasmons are shown through their dependence on optical pumping intensity and electron fillings, in conjunction with distinct resonance splitting and Faraday rotation coinciding with the spectral window of maximal Berry flux. Moreover, we also identify a slow plasmonic mode around 0.4 electronvolts, which stems from the interband transitions between the nested subbands in lattice-relaxed AB-stacked domains. This mode may open up opportunities for strong light-matter interactions within the highly sought after mid-wave infrared spectral window8. Our results unveil the new electromagnetic dynamics of small-angle tBLG and exemplify it as a unique quantum optical platform.
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205
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Ledwith PJ, Vishwanath A, Khalaf E. Family of Ideal Chern Flatbands with Arbitrary Chern Number in Chiral Twisted Graphene Multilayers. PHYSICAL REVIEW LETTERS 2022; 128:176404. [PMID: 35570445 DOI: 10.1103/physrevlett.128.176404] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Accepted: 03/24/2022] [Indexed: 06/15/2023]
Abstract
We consider a family of twisted graphene multilayers consisting of n-untwisted chirally stacked layers, e.g., AB, ABC, etc, with a single twist on top of m-untwisted chirally stacked layers. Upon neglecting both trigonal warping terms for the untwisted layers and the same sublattice hopping between all layers, the resulting models generalize several remarkable features of the chiral model of twisted bilayer graphene (CTBG). In particular, they exhibit a set of magic angles which are identical to those of CTBG at which a pair of bands (i) are perfectly flat, (ii) have Chern numbers in the sublattice basis given by ±(n,-m) or ±(n+m-1,-1) depending on the stacking chirality, and (iii) satisfy the trace condition, saturating an inequality between the quantum metric and the Berry curvature, and thus realizing ideal quantum geometry. These are the first higher Chern bands that satisfy (iii) beyond fine-tuned models or combinations of Landau levels. We show that ideal quantum geometry is directly related to the construction of fractional quantum Hall model wave functions. We provide explicit analytic expressions for the flatband wave functions at the magic angle in terms of the CTBG wave functions. We also show that the Berry curvature distribution in these models can be continuously tuned while maintaining perfect quantum geometry. Similar to the study of fractional Chern insulators in ideal C=1 bands, these models pave the way for investigating exotic topological phases in higher Chern bands for which no Landau level analog is available.
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Affiliation(s)
- Patrick J Ledwith
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - Ashvin Vishwanath
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - Eslam Khalaf
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
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206
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Zhang L, Wang Y, Hu R, Wan P, Zheliuk O, Liang M, Peng X, Zeng YJ, Ye J. Correlated States in Strained Twisted Bilayer Graphenes Away from the Magic Angle. NANO LETTERS 2022; 22:3204-3211. [PMID: 35385281 PMCID: PMC9052762 DOI: 10.1021/acs.nanolett.1c04400] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2021] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Graphene moiré superlattice formed by rotating two graphene sheets can host strongly correlated and topological states when flat bands form at so-called magic angles. Here, we report that, for a twisting angle far away from the magic angle, the heterostrain induced during stacking heterostructures can also create flat bands. Combining a direct visualization of strain effect in twisted bilayer graphene moiré superlattices and transport measurements, features of correlated states appear at "non-magic" angles in twisted bilayer graphene under the heterostrain. Observing correlated states in these "non-standard" conditions can enrich the understanding of the possible origins of the correlated states and widen the freedom in tuning the moiré heterostructures and the scope of exploring the correlated physics in moiré superlattices.
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Affiliation(s)
- Le Zhang
- College
of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
| | - Ying Wang
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
| | - Rendong Hu
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
| | - Puhua Wan
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
| | - Oleksandr Zheliuk
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
- CogniGron
(Groningen Cognitive Systems and Materials Center), University of Groningen, 9747AG Groningen, The Netherlands
| | - Minpeng Liang
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
| | - Xiaoli Peng
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
| | - Yu-Jia Zeng
- College
of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jianting Ye
- Device
Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, 9747AG Groningen, The Netherlands
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207
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Finney J, Sharpe AL, Fox EJ, Hsueh CL, Parker DE, Yankowitz M, Chen S, Watanabe K, Taniguchi T, Dean CR, Vishwanath A, Kastner MA, Goldhaber-Gordon D. Unusual magnetotransport in twisted bilayer graphene. Proc Natl Acad Sci U S A 2022; 119:e2118482119. [PMID: 35412918 PMCID: PMC9169859 DOI: 10.1073/pnas.2118482119] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2021] [Accepted: 03/15/2022] [Indexed: 12/03/2022] Open
Abstract
SignificanceWhen two sheets of graphene are twisted to the magic angle of 1.1∘, the resulting flat moiré bands can host exotic correlated electronic states such as superconductivity and ferromagnetism. Here, we show transport properties of a twisted bilayer graphene device at 1.38∘, far enough above the magic angle that we do not expect exotic correlated states. Instead, we see several unusual behaviors in the device's resistivity upon tuning both charge carrier density and perpendicular magnetic field. We can reproduce these behaviors with a surprisingly simple model based on Hofstadter's butterfly. These results shed light on the underlying properties of twisted bilayer graphene.
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Affiliation(s)
- Joe Finney
- Department of Physics, Stanford University, Stanford, CA 94305
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
| | - Aaron L. Sharpe
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Applied Physics, Stanford University, Stanford, CA 94305
| | - Eli J. Fox
- Department of Physics, Stanford University, Stanford, CA 94305
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
| | - Connie L. Hsueh
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Applied Physics, Stanford University, Stanford, CA 94305
| | | | - Matthew Yankowitz
- Department of Physics, University of Washington, Seattle, WA 98195
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195
| | - Shaowen Chen
- Department of Physics, Harvard University, Cambridge, MA 02138
- Department of Physics, Columbia University, New York, NY 10027
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Cory R. Dean
- Department of Physics, Columbia University, New York, NY 10027
| | | | - M. A. Kastner
- Department of Physics, Stanford University, Stanford, CA 94305
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - David Goldhaber-Gordon
- Department of Physics, Stanford University, Stanford, CA 94305
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
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208
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Lin X, Chen BB, Li W, Meng ZY, Shi T. Exciton Proliferation and Fate of the Topological Mott Insulator in a Twisted Bilayer Graphene Lattice Model. PHYSICAL REVIEW LETTERS 2022; 128:157201. [PMID: 35499872 DOI: 10.1103/physrevlett.128.157201] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2021] [Revised: 01/03/2022] [Accepted: 03/20/2022] [Indexed: 05/10/2023]
Abstract
A topological Mott insulator (TMI) with spontaneous time-reversal symmetry breaking and nonzero Chern number has been discovered in a real-space effective model for twisted bilayer graphene (TBG) at 3/4 filling in the strong coupling limit [1]. However, the finite temperature properties of such a TMI state remain illusive. In this work, employing the state-of-the-art thermal tensor network and the perturbative field-theoretical approaches, we obtain the finite-T phase diagram and the dynamical properties of the TBG model. The phase diagram includes the quantum anomalous Hall and charge density wave phases at low T, and an Ising transition separating them from the high-T symmetric phases. Because of the proliferation of excitons-particle-hole bound states-the transitions take place at a significantly reduced temperature than the mean-field estimation. The exciton phase is accompanied with distinctive experimental signatures in such as in charge compressibilities and optical conductivities close to the transition. Our work explains the smearing of the many-electron state topology by proliferating excitons and opens an avenue for controlled many-body investigations on finite-temperature states in the TBG and other quantum moiré systems.
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Affiliation(s)
- Xiyue Lin
- CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijng 100049, China
| | - Bin-Bin Chen
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Wei Li
- CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, Beihang University, Beijing 100191, China
| | - Zi Yang Meng
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
| | - Tao Shi
- CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China
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209
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Shavit G, Oreg Y. Domain Formation Driven by the Entropy of Topological Edge Modes. PHYSICAL REVIEW LETTERS 2022; 128:156801. [PMID: 35499882 DOI: 10.1103/physrevlett.128.156801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 03/30/2022] [Indexed: 06/14/2023]
Abstract
In this Letter we study interacting systems with spontaneous discrete symmetry breaking, where the degenerate symmetry-broken states are topologically distinct gapped phases. Edge modes appear at domain walls between the two topological phases. In the presence of a weak disorder field conjugate to the order parameter, we find that the entropy of the edge modes drives a thermal transition between a gapped uniform phase and a phase with a disorder-induced domain structure. We characterize this transition using a phenomenological Landau functional, and corroborate our conclusions with a concrete microscopic model. Finally, we discuss the possibilities of experimental signatures of this phase transition, and propose graphene-based moiré heterostructures as candidate materials in which such a phase transition can be detected.
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Affiliation(s)
- Gal Shavit
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel, 76100
| | - Yuval Oreg
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel, 76100
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210
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Wagner G, Kwan YH, Bultinck N, Simon SH, Parameswaran SA. Global Phase Diagram of the Normal State of Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2022; 128:156401. [PMID: 35499897 DOI: 10.1103/physrevlett.128.156401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2021] [Accepted: 03/28/2022] [Indexed: 06/14/2023]
Abstract
We investigate the full doping and strain-dependent phase diagram of the normal state of magic-angle twisted bilayer graphene (TBG). Using comprehensive Hartree-Fock calculations, we show that at temperatures where superconductivity is absent the global phase structure can be understood based on the competition and coexistence between three types of intertwined orders: a fully symmetric phase, spatially uniform flavor-symmetry-breaking states, and an incommensurate Kekulé spiral (IKS) order. For small strain, the IKS phase, recently proposed as a candidate order at all nonzero integer fillings of the moiré unit cell, is found to be ubiquitous for noninteger doping as well. We demonstrate that the corresponding electronic compressibility and Fermi surface structure are consistent with the "cascade" physics and Landau fans observed experimentally. This suggests a unified picture of the phase diagram of TBG in terms of IKS order.
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Affiliation(s)
- Glenn Wagner
- Rudolf Peierls Centre for Theoretical Physics, Parks Road, Oxford OX1 3PU, United Kingdom
- Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland
| | - Yves H Kwan
- Rudolf Peierls Centre for Theoretical Physics, Parks Road, Oxford OX1 3PU, United Kingdom
| | - Nick Bultinck
- Rudolf Peierls Centre for Theoretical Physics, Parks Road, Oxford OX1 3PU, United Kingdom
- Department of Physics, Ghent University, Krijgslaan 281, 9000 Gent, Belgium
| | - Steven H Simon
- Rudolf Peierls Centre for Theoretical Physics, Parks Road, Oxford OX1 3PU, United Kingdom
| | - S A Parameswaran
- Rudolf Peierls Centre for Theoretical Physics, Parks Road, Oxford OX1 3PU, United Kingdom
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211
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Bian M, Zhu L, Wang X, Choi J, Chopdekar RV, Wei S, Wu L, Huai C, Marga A, Yang Q, Li YC, Yao F, Yu T, Crooker SA, Cheng XM, Sabirianov RF, Zhang S, Lin J, Hou Y, Zeng H. Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200117. [PMID: 35236008 DOI: 10.1002/adma.202200117] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Revised: 02/28/2022] [Indexed: 06/14/2023]
Abstract
Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr5 Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr5 Te8 , with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe2 via 3 × 3 (Cr5 Te8 )/7 × 7 (WSe2 ) supercell matching, forming a single-crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed "dative epitaxy", which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5 Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.
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Affiliation(s)
- Mengying Bian
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA
| | - Liang Zhu
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xiao Wang
- Physics Department, Bryn Mawr College, Bryn Mawr, PA, 19010, USA
| | - Junho Choi
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Rajesh V Chopdekar
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Sichen Wei
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA
| | - Lishu Wu
- Division of Physics & Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Chang Huai
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA
| | - Austin Marga
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA
| | - Qishuo Yang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuguang C Li
- Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA
| | - Fei Yao
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA
| | - Ting Yu
- Division of Physics & Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Scott A Crooker
- National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Xuemei M Cheng
- Physics Department, Bryn Mawr College, Bryn Mawr, PA, 19010, USA
| | - Renat F Sabirianov
- Department of Physics, University of Nebraska-Omaha, Omaha, NE, 68182, USA
| | - Shengbai Zhang
- Department of Physics, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yanglong Hou
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Hao Zeng
- Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA
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212
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Yang J, Chen G, Han T, Zhang Q, Zhang YH, Jiang L, Lyu B, Li H, Watanabe K, Taniguchi T, Shi Z, Senthil T, Zhang Y, Wang F, Ju L. Spectroscopy signatures of electron correlations in a trilayer graphene/hBN moiré superlattice. Science 2022; 375:1295-1299. [PMID: 35298267 DOI: 10.1126/science.abg3036] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
ABC-stacked trilayer graphene/hexagonal boron nitride moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. We report spectroscopy measurements of dual-gated TLG/hBN using Fourier transform infrared photocurrent spectroscopy. We observed a strong optical transition between moiré minibands that narrows continuously as a bandgap is opened by gating, indicating a reduction of the single-particle bandwidth. At half-filling of the valence flat band, a broad absorption peak emerges at ~18 milli-electron volts, indicating direct optical excitation across an emerging Mott gap. Similar photocurrent spectra are observed in two other correlated insulating states at quarter- and half-filling of the first conduction band. Our findings provide key parameters of the Hubbard model for the understanding of electron correlation in TLG/hBN.
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Affiliation(s)
- Jixiang Yang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Guorui Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China.,Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.,Department of Physics, University of California at Berkeley, Berkeley, CA, USA
| | - Tianyi Han
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Qihang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ya-Hui Zhang
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Lili Jiang
- Department of Physics, University of California at Berkeley, Berkeley, CA, USA
| | - Bosai Lyu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Hongyuan Li
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.,Department of Physics, University of California at Berkeley, Berkeley, CA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Todadri Senthil
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.,Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
| | - Feng Wang
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.,Department of Physics, University of California at Berkeley, Berkeley, CA, USA.,Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Long Ju
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
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213
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Zollner K, Fabian J. Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr_{2}Ge_{2}Te_{6}. PHYSICAL REVIEW LETTERS 2022; 128:106401. [PMID: 35333087 DOI: 10.1103/physrevlett.128.106401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 12/22/2021] [Accepted: 02/17/2022] [Indexed: 06/14/2023]
Abstract
We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr_{2}Ge_{2}Te_{6} from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model Hamiltonian, yielding effective sublattice-resolved proximity-induced exchange parameters (λ_{ex}^{A} and λ_{ex}^{B}) for a series of twist angles between 0° and 30°. For aligned layers (0° twist angle), the exchange coupling of graphene is the same on both sublattices, λ_{ex}^{A}≈λ_{ex}^{B}≈4 meV, while the coupling is reversed at 30° (with λ_{ex}^{A}≈λ_{ex}^{B}≈-4 meV). Remarkably, at 19.1° the induced exchange coupling becomes antiferromagnetic: λ_{ex}^{A}<0, λ_{ex}^{B}>0. Further tuning is provided by a transverse electric field and the interlayer distance. The predicted proximity magnetization reversal and emergence of an antiferromagnetic Dirac dispersion make twisted graphene/Cr_{2}Ge_{2}Te_{6} bilayers a versatile platform for realizing topological phases and for spintronics applications.
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Affiliation(s)
- Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
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214
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Wu Y, Wang W, Pan L, Wang KL. Manipulating Exchange Bias in a Van der Waals Ferromagnet. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105266. [PMID: 34910836 DOI: 10.1002/adma.202105266] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Revised: 12/01/2021] [Indexed: 06/14/2023]
Abstract
Spintronics applications of thin-film magnets require control and design of specific magnetic properties. Exchange bias, originating from the pinning of spins in a ferromagnet by these of an antiferromagnet, is a part of the highly important elements for spintronics applications. Here, an exchange bias of ≈90 mT in a van der Waals ferromagnet encapsulated by two antiferromagnets at 5 K, the value of which is highly tunable by the field coolings, is reported. The non-antisymmetric dependence of exchange bias on field cooling is explained through considering an uncompensated interfacial magnetic layer of an antiferromagnet with a noncollinear spin texture, and a weak antiferromagnetic order in the oxidized layer, at two ferromagnet/antiferromagnet interfaces. This work opens up new routes toward designing and controlling 2D spintronic devices made of atomically thin van der Waals magnets.
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Affiliation(s)
- Yingying Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Wei Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Lei Pan
- Department of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
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215
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Ochoa H, Fernandes RM. Degradation of Phonons in Disordered Moiré Superlattices. PHYSICAL REVIEW LETTERS 2022; 128:065901. [PMID: 35213205 DOI: 10.1103/physrevlett.128.065901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Revised: 11/29/2021] [Accepted: 01/14/2022] [Indexed: 06/14/2023]
Abstract
The elastic collective modes of a moiré superlattice arise not from vibrations of a rigid crystal but from the relative displacement between the constituent layers. Despite their similarity to acoustic phonons, these modes, called phasons, are not protected by any conservation law. Here, we show that disorder in the relative orientation between the layers and thermal fluctuations associated with their sliding motion degrade the propagation of sound in the moiré superlattice. Specifically, the phason modes become overdamped at low energies and acquire a finite gap, which displays a universal dependence on the twist-angle variance. Thus, twist-angle inhomogeneity is manifested not only in the noninteracting electronic structure of moiré systems, but also in their phononlike modes. More broadly, our results have important implications for the electronic properties of twisted moiré systems that are sensitive to the electron-phonon coupling.
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Affiliation(s)
- Héctor Ochoa
- Donostia International Physics Center, 20018 Donostia-San, Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spain
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - Rafael M Fernandes
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
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216
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Zhang Q, Zhang Y, Hou Y, Xu R, Jia L, Huang Z, Hao X, Zhou J, Zhang T, Liu L, Xu Y, Gao HJ, Wang Y. Nanoscale Control of One-Dimensional Confined States in Strongly Correlated Homojunctions. NANO LETTERS 2022; 22:1190-1197. [PMID: 35043640 DOI: 10.1021/acs.nanolett.1c04363] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Construction of lateral junctions is essential to generate one-dimensional (1D) confined potentials that can effectively trap quasiparticles. A series of remarkable electronic phases in one dimension, such as Wigner crystallization, are expected to be realized in such junctions. Here, we demonstrate that we can precisely tune the 1D-confined potential with an in situ manipulation technique, thus providing a dynamic way to modify the correlated electronic states at the junctions. We confirm the existence of 1D-confined potential at the homojunction of two single-layer 1T-NbSe2 islands. Such potential is structurally sensitive and shows a nonmonotonic function of their interspacing. Moreover, there is a change of electronic properties from the correlated insulator to the generalized 1D Wigner crystallization while the confinement becomes strong. Our findings not only establish the capability to fabricate structures with dynamically tunable properties, but also pave the way toward more exotic correlated systems in low dimensions.
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Affiliation(s)
- Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yanhui Hou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Runzhang Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoyu Hao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jiadong Zhou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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217
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Reproducibility in the fabrication and physics of moiré materials. Nature 2022; 602:41-50. [PMID: 35110759 DOI: 10.1038/s41586-021-04173-z] [Citation(s) in RCA: 62] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Accepted: 10/21/2021] [Indexed: 11/08/2022]
Abstract
Overlaying two atomic layers with a slight lattice mismatch or at a small rotation angle creates a moiré superlattice, which has properties that are markedly modified from (and at times entirely absent in) the 'parent' materials. Such moiré materials have progressed the study and engineering of strongly correlated phenomena and topological systems in reduced dimensions. The fundamental understanding of the electronic phases, such as superconductivity, requires a precise control of the challenging fabrication process, involving the rotational alignment of two atomically thin layers with an angular precision below 0.1 degrees. Here we review the essential properties of moiré materials and discuss their fabrication and physics from a reproducibility perspective.
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218
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Lin JX, Zhang YH, Morissette E, Wang Z, Liu S, Rhodes D, Watanabe K, Taniguchi T, Hone J, Li JIA. Spin-orbit-driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene. Science 2022; 375:437-441. [PMID: 34990215 DOI: 10.1126/science.abh2889] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Strong electron correlation and spin-orbit coupling (SOC) can have a profound influence on the electronic properties of materials. We examined their combined influence on a two-dimensional electronic system at the atomic interface between magic-angle twisted bilayer graphene and a tungsten diselenide crystal. We found that strong electron correlation within the moiré flatband stabilizes correlated insulating states at both quarter and half filling, and that SOC transforms these Mott-like insulators into ferromagnets, as evidenced by a robust anomalous Hall effect with hysteretic switching behavior. The coupling between spin and valley degrees of freedom could be demonstrated through control of the magnetic order with an in-plane magnetic field or a perpendicular electric field. Our findings establish an experimental knob to engineer topological properties of moiré bands in twisted bilayer graphene and related systems.
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Affiliation(s)
- Jiang-Xiazi Lin
- Department of Physics, Brown University, Providence, RI 02912, USA
| | - Ya-Hui Zhang
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Erin Morissette
- Department of Physics, Brown University, Providence, RI 02912, USA
| | - Zhi Wang
- Department of Physics, Brown University, Providence, RI 02912, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - Daniel Rhodes
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - K Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | - J I A Li
- Department of Physics, Brown University, Providence, RI 02912, USA
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219
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Yang H, Zhang T, Huang Z, Chen Y, Song X, Hao X, Yang H, Wu X, Zhang Y, Liu L, Gao HJ, Wang Y. Visualization of Charge-Density-Wave Reconstruction and Electronic Superstructure at the Edge of Correlated Insulator 1T-NbSe 2. ACS NANO 2022; 16:1332-1338. [PMID: 34941258 DOI: 10.1021/acsnano.1c09249] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Edges of low-dimensional quantum systems have profound effects on both fundamental research and device functionality. Real-space investigation of the microscopic edge structures and understanding the edge-modulated electronic properties are of great essence. Here we report the nanoscale structural reconstruction at the atomically sharp edge of a charge-density-wave (CDW) correlated insulator 1T-NbSe2 and the induced electronic properties. We find the CDW unit cells at the edge of single layer (SL) 1T-NbSe2 evolve from the well-defined CDW order in bulk and spontaneously reconstruct into the quartet along the edge. Moreover, we capture an anomalous electronic superstructure along the edge, the periodicity of which is four times that of ordinary CDW lattice. Our findings provide a way to design the one-dimensional electronic superstructure in 2D quantum materials.
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Affiliation(s)
- Han Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoyu Hao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huixia Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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220
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Lou R, Fedorov A, Yin Q, Kuibarov A, Tu Z, Gong C, Schwier EF, Büchner B, Lei H, Borisenko S. Charge-Density-Wave-Induced Peak-Dip-Hump Structure and the Multiband Superconductivity in a Kagome Superconductor CsV_{3}Sb_{5}. PHYSICAL REVIEW LETTERS 2022; 128:036402. [PMID: 35119899 DOI: 10.1103/physrevlett.128.036402] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2021] [Revised: 11/23/2021] [Accepted: 12/23/2021] [Indexed: 05/12/2023]
Abstract
The entanglement of charge density wave (CDW), superconductivity, and topologically nontrivial electronic structure has recently been discovered in the kagome metal AV_{3}Sb_{5} (A=K, Rb, Cs) family. With high-resolution angle-resolved photoemission spectroscopy, we study the electronic properties of CDW and superconductivity in CsV_{3}Sb_{5}. The spectra around K[over ¯] is found to exhibit a peak-dip-hump structure associated with two separate branches of dispersion, demonstrating the isotropic CDW gap opening below E_{F}. The peak-dip-hump line shape is contributed by linearly dispersive Dirac bands in the lower branch and a dispersionless flat band close to E_{F} in the upper branch. The electronic instability via Fermi surface nesting could play a role in determining these CDW-related features. The superconducting gap of ∼0.4 meV is observed on both the electron band around Γ[over ¯] and the flat band around K[over ¯], implying the multiband superconductivity. The finite density of states at E_{F} in the CDW phase is most likely in favor of the emergence of multiband superconductivity, particularly the enhanced density of states associated with the flat band. Our results not only shed light on the controversial origin of the CDW, but also offer insights into the relationship between CDW and superconductivity.
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Affiliation(s)
- Rui Lou
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
- Leibniz Institute for Solid State and Materials Research, IFW Dresden, 01069 Dresden, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, 12489 Berlin, Germany
| | - Alexander Fedorov
- Leibniz Institute for Solid State and Materials Research, IFW Dresden, 01069 Dresden, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, 12489 Berlin, Germany
| | - Qiangwei Yin
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Andrii Kuibarov
- Leibniz Institute for Solid State and Materials Research, IFW Dresden, 01069 Dresden, Germany
| | - Zhijun Tu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Chunsheng Gong
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Eike F Schwier
- Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Germany
| | - Bernd Büchner
- Leibniz Institute for Solid State and Materials Research, IFW Dresden, 01069 Dresden, Germany
- Institute for Solid State and Materials Physics, TU Dresden, 01062 Dresden, Germany
| | - Hechang Lei
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Sergey Borisenko
- Leibniz Institute for Solid State and Materials Research, IFW Dresden, 01069 Dresden, Germany
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221
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Zhang S, Dai X, Liu J. Spin-Polarized Nematic Order, Quantum Valley Hall States, and Field-Tunable Topological Transitions in Twisted Multilayer Graphene Systems. PHYSICAL REVIEW LETTERS 2022; 128:026403. [PMID: 35089764 DOI: 10.1103/physrevlett.128.026403] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2021] [Revised: 07/17/2021] [Accepted: 12/22/2021] [Indexed: 06/14/2023]
Abstract
We theoretically study the correlated insulator states, quantum anomalous Hall (QAH) states, and field-induced topological transitions between different correlated states in twisted multilayer graphene systems. Taking twisted bilayer-monolayer graphene and twisted double-bilayer graphene as examples, we show that both systems stay in spin-polarized, C_{3z}-broken insulator states with zero Chern number at 1/2 filling of the flat bands under finite displacement fields. In some cases these spin-polarized, nematic insulator states are in the quantum valley Hall (QVH) phase by virtue of the nontrivial band topology of the systems. The spin-polarized insulator state is quasidegenerate with the valley polarized state if only the dominant intravalley Coulomb interaction is included. Such quasidegeneracy can be split by atomic on-site interactions such that the spin-polarized, nematic state become the unique ground state. Such a scenario applies to various twisted multilayer graphene systems at 1/2 filling, thus can be considered as a universal mechanism. Moreover, under vertical magnetic fields, the orbital Zeeman splittings and the field-induced change of charge density in twisted multilayer graphene systems would compete with the atomic Hubbard interactions, which can drive transitions from spin-polarized zero-Chern-number states to valley-polarized QAH states with small onset magnetic fields.
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Affiliation(s)
- Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
| | - Xi Dai
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
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222
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Xie YM, Zhang CP, Hu JX, Mak KF, Law KT. Valley-Polarized Quantum Anomalous Hall State in Moiré MoTe_{2}/WSe_{2} Heterobilayers. PHYSICAL REVIEW LETTERS 2022; 128:026402. [PMID: 35089739 DOI: 10.1103/physrevlett.128.026402] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 11/03/2021] [Accepted: 12/21/2021] [Indexed: 06/14/2023]
Abstract
Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling ν=2 (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling ν=1 were observed in AB stacked moiré MoTe_{2}/WSe_{2} heterobilayers. However, how the topologically nontrivial states emerge is not known. In this Letter, we propose that the pseudomagnetic fields induced by lattice relaxation in moiré MoTe_{2}/WSe_{2} heterobilayers could naturally give rise to moiré bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full filling ν=2, when two moiré bands with opposite Chern numbers are filled. At half filling ν=1, the Coulomb interaction lifts the valley degeneracy and results in a valley-polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically nontrivial states in heterobilayer TMD materials.
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Affiliation(s)
- Ying-Ming Xie
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, 999077 Hong Kong, China
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, 999077 Hong Kong, China
| | - Jin-Xin Hu
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, 999077 Hong Kong, China
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA
| | - K T Law
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, 999077 Hong Kong, China
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223
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Chen G, Sharpe AL, Fox EJ, Wang S, Lyu B, Jiang L, Li H, Watanabe K, Taniguchi T, Crommie MF, Kastner MA, Shi Z, Goldhaber-Gordon D, Zhang Y, Wang F. Tunable Orbital Ferromagnetism at Noninteger Filling of a Moiré Superlattice. NANO LETTERS 2022; 22:238-245. [PMID: 34978444 DOI: 10.1021/acs.nanolett.1c03699] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The flat bands resulting from moiré superlattices exhibit fascinating correlated electron phenomena such as correlated insulators, ( Nature 2018, 556 (7699), 80-84), ( Nature Physics 2019, 15 (3), 237) superconductivity, ( Nature 2018, 556 (7699), 43-50), ( Nature 2019, 572 (7768), 215-219) and orbital magnetism. ( Science 2019, 365 (6453), 605-608), ( Nature 2020, 579 (7797), 56-61), ( Science 2020, 367 (6480), 900-903) Such magnetism has been observed only at particular integer multiples of n0, the density corresponding to one electron per moiré superlattice unit cell. Here, we report the experimental observation of ferromagnetism at noninteger filling (NIF) of a flat Chern band in a ABC-TLG/hBN moiré superlattice. This state exhibits prominent ferromagnetic hysteresis behavior with large anomalous Hall resistivity in a broad region of densities centered in the valence miniband at n = -2.3n0. We observe that, not only the magnitude of the anomalous Hall signal, but also the sign of the hysteretic ferromagnetic response can be modulated by tuning the carrier density and displacement field. Rotating the sample in a fixed magnetic field demonstrates that the ferromagnetism is highly anisotropic and likely purely orbital in character.
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Affiliation(s)
- Guorui Chen
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Aaron L Sharpe
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Quantum and Electronic Materials Department, Sandia National Laboratories, Livermore, California 94550, United States
| | - Eli J Fox
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Shaoxin Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Bosai Lyu
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Lili Jiang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Hongyuan Li
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Michael F Crommie
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute, University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Marc A Kastner
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhiwen Shi
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - David Goldhaber-Gordon
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Feng Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Kavli Energy NanoSciences Institute, University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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224
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Zhao S, Kitaura R, Moon P, Koshino M, Wang F. Interlayer Interactions in 1D Van der Waals Moiré Superlattices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103460. [PMID: 34841726 PMCID: PMC8805582 DOI: 10.1002/advs.202103460] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2021] [Revised: 10/02/2021] [Indexed: 06/13/2023]
Abstract
Studying two-dimensional (2D) van der Waals (vdW) moiré superlattices and their interlayer interactions have received surging attention after recent discoveries of many new phases of matter that are highly tunable. Different atomistic registry between layers forming the inner and outer nanotubes can also form one-dimensional (1D) vdW moiré superlattices. In this review, experimental observations and theoretical perspectives related to interlayer interactions in 1D vdW moiré superlattices are summarized. The discussion focuses on double-walled carbon nanotubes (DWNTs), a model 1D vdW moiré system, and the authors highlight the new optical features emerging from the non-trivial strong interlayer coupling effect and the unique physics in 1D DWNTs. Future directions and questions in probing the intriguing physical phenomena in 1D vdW moiré superlattices such as, correlated physics in different 1D moiré systems beyond DWNTs are proposed and discussed.
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Affiliation(s)
- Sihan Zhao
- Interdisciplinary Center for Quantum InformationZhejiang Province Key Laboratory of Quantum Technology and DeviceState Key Laboratory of Silicon MaterialsDepartment of PhysicsZhejiang UniversityHangzhou310027China
| | - Ryo Kitaura
- Department of ChemistryNagoya UniversityNagoya464‐8602Japan
| | - Pilkyung Moon
- Arts and SciencesNYU ShanghaiShanghai200122China
- NYU‐ECNU Institute of Physics at NYU ShanghaiShanghai200062China
| | - Mikito Koshino
- Department of PhysicsOsaka UniversityToyonaka560‐0043Japan
| | - Feng Wang
- Department of PhysicsUniversity of California at BerkeleyBerkeleyCA94720USA
- Materials Science DivisionLawrence Berkeley National LaboratoryBerkeleyCAUSA
- Kavli Energy NanoSciences Institute at University of California Berkeley and Lawrence Berkeley National LaboratoryBerkeleyCA94720USA
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225
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Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, Nagashio K. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:275-299. [PMID: 35557511 PMCID: PMC9090349 DOI: 10.1080/14686996.2022.2062576] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 05/22/2023]
Abstract
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.
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Affiliation(s)
- Hiroki Ago
- Global Innovation Center, Kyushu University, Fukuoka, Japan
- CONTACT Hiroki Ago Global Innovation Center, Kyushu University, Fukuoka816-8580, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Japan
| | | | | | - Kosei Ueno
- Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo, Japan
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226
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Liu M, Wang L, Yu G. Developing Graphene-Based Moiré Heterostructures for Twistronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103170. [PMID: 34723434 PMCID: PMC8728823 DOI: 10.1002/advs.202103170] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.
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Affiliation(s)
- Mengya Liu
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Liping Wang
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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227
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An J, Kang J. Emergence and Tuning of Multiple Flat Bands in Twisted Bilayer γ-Graphyne. J Phys Chem Lett 2021; 12:12283-12291. [PMID: 34931832 DOI: 10.1021/acs.jpclett.1c03384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Using twisted bilayer γ-graphyne (TBGY) as an example, we show that it is possible to create multiple flat bands in carbon allotropes without the requirement of a specified magic angle. The origin of the flat bands can be understood by a simple two-level coupling model. The narrow bandwidth and strong localization of the flat band states might lead to strong correlation effects, which make TBGY a good platform for studying correlation physics. On the basis of the two-level coupling model, we further propose that the width and extent of localization of flat bands can be tuned by an energy mismatch ΔE between the two layers of TBGY, which can be realized by either applying a perpendicular electric field or introducing a heterostrain. This allows continuous modulation of TBGY from the strong-correlation regime to the medium- or weak-correlation regime, which could be utilized to study the quantum phase transition.
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Affiliation(s)
- Jiao An
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Jun Kang
- Beijing Computational Science Research Center, Beijing 100193, China
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228
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Kang J, Bernevig BA, Vafek O. Cascades between Light and Heavy Fermions in the Normal State of Magic-Angle Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2021; 127:266402. [PMID: 35029496 DOI: 10.1103/physrevlett.127.266402] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2021] [Revised: 10/07/2021] [Accepted: 11/17/2021] [Indexed: 06/14/2023]
Abstract
We present a framework for understanding the cascade transitions and the Landau level degeneracies of twisted bilayer graphene. The Coulomb interaction projected onto narrow bands causes the charged excitations at an integer filling to disperse, forming new bands. If the excitation moves the filling away from the charge neutrality point, then it has a band minimum at the moiré Brillouin zone center with a small mass that compares well with the experiment; if towards the charge neutrality point, then it has a much larger mass and a higher degeneracy. At a nonzero density away from an integer filling the excitations interact. The system on the small mass side has a large bandwidth and forms a Fermi liquid. On the large mass side the bandwidth is narrow, the compressibility is negative and the Fermi liquid is likely unstable. This explains the observed sawtooth features in compressibility, the Landau fans pointing away from charge neutrality and their degeneracies. The framework sets the stage for superconductivity at lower temperatures.
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Affiliation(s)
- Jian Kang
- School of Physical Science and Technology & Institute for Advanced Study, Soochow University, Suzhou 215006, China
| | - B Andrei Bernevig
- Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Oskar Vafek
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA
- Department of Physics, Florida State University, Tallahassee, Florida 32306, USA
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229
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Zhao YX, Zhou XF, Zhang Y, He L. Oscillations of the Spacing between van Hove Singularities Induced by sub-Ångstrom Fluctuations of Interlayer Spacing in Graphene Superlattices. PHYSICAL REVIEW LETTERS 2021; 127:266801. [PMID: 35029491 DOI: 10.1103/physrevlett.127.266801] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Revised: 06/27/2021] [Accepted: 11/18/2021] [Indexed: 06/14/2023]
Abstract
Physical properties of two-dimensional van der Waals (vdWs) structures depend sensitively on both stacking orders and interlayer interactions. Yet, in most cases studied to date, the interlayer interaction is considered to be a "static" property of the vdWs structures. Here we demonstrate that applying a scanning tunneling microscopy (STM) tip pulse on twisted bilayer graphene (TBG) can induce sub-Ångstrom fluctuations of the interlayer separation in the TBG, which are equivalent to dynamic vertical external pressure of about 10 GPa on the TBG. The sub-Ångstrom fluctuations of the interlayer separation result in large oscillations of the energy separations between two van Hove singularities (VHSs) in the TBG. The period of the oscillations of the VHSs spacing is extremely long, about 500-1000 sec, attributing to tip-induced local stress in the atomic-thick TBG. Our result provides an efficient method to tune and measure the physical properties of the vdWs structures dynamically.
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Affiliation(s)
- Ya-Xin Zhao
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China
| | - Xiao-Feng Zhou
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China
| | - Yu Zhang
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, People's Republic of China
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230
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Shavit G, Berg E, Stern A, Oreg Y. Theory of Correlated Insulators and Superconductivity in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2021; 127:247703. [PMID: 34951791 DOI: 10.1103/physrevlett.127.247703] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2021] [Accepted: 11/18/2021] [Indexed: 06/14/2023]
Abstract
We introduce and analyze a model that sheds light on the interplay between correlated insulating states, superconductivity, and flavor-symmetry breaking in magic angle twisted bilayer graphene. Using a variational mean-field theory, we determine the normal-state phase diagram of our model as a function of the band filling. The model features robust insulators at even integer fillings, occasional weaker insulators at odd integer fillings, and a pattern of flavor-symmetry breaking at noninteger fillings. Adding a phonon-mediated intervalley retarded attractive interaction, we obtain strong-coupling superconducting domes, whose structure is in qualitative agreement with experiments. Our model elucidates how the intricate form of the interactions and the particle-hole asymmetry of the electronic structure determine the phase diagram. It also explains how subtle differences between devices may lead to the different behaviors observed experimentally. A similar model can be applied with minor modifications to other moiré systems, such as twisted trilayer graphene.
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Affiliation(s)
- Gal Shavit
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Erez Berg
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Ady Stern
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Yuval Oreg
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
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231
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Sun X, Zhang S, Liu Z, Zhu H, Huang J, Yuan K, Wang Z, Watanabe K, Taniguchi T, Li X, Zhu M, Mao J, Yang T, Kang J, Liu J, Ye Y, Han ZV, Zhang Z. Correlated states in doubly-aligned hBN/graphene/hBN heterostructures. Nat Commun 2021; 12:7196. [PMID: 34893613 PMCID: PMC8664858 DOI: 10.1038/s41467-021-27514-y] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 11/17/2021] [Indexed: 11/08/2022] Open
Abstract
Interfacial moiré superlattices in van der Waals vertical assemblies effectively reconstruct the crystal symmetry, leading to opportunities for investigating exotic quantum states. Notably, a two-dimensional nanosheet has top and bottom open surfaces, allowing the specific case of doubly aligned super-moiré lattice to serve as a toy model for studying the tunable lattice symmetry and the complexity of related electronic structures. Here, we show that by doubly aligning a graphene monolayer to both top and bottom encapsulating hexagonal boron nitride (h-BN), multiple conductivity minima are observed away from the main Dirac point, which are sensitively tunable with respect to the small twist angles. Moreover, our experimental evidences together with theoretical calculations suggest correlated insulating states at integer fillings of -5, -6, -7 electrons per moiré unit cell, possibly due to inter-valley coherence. Our results provide a way to construct intriguing correlations in 2D electronic systems in the weak interaction regime.
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Affiliation(s)
- Xingdan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 200031, Shanghai, China
| | - Zhiyong Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Honglei Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Jinqiang Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Kai Yuan
- State Key Lab for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, 100871, Beijing, China
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
| | - Zhenhua Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China.
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, 410073, Changsha, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Jun Kang
- Beijing Computational Science Research Center, 100193, Beijing, China.
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China.
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 200031, Shanghai, China.
| | - Yu Ye
- State Key Lab for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
| | - Zheng Vitto Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, China.
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
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232
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Vallejo Bustamante J, Wu NJ, Fermon C, Pannetier-Lecoeur M, Wakamura T, Watanabe K, Taniguchi T, Pellegrin T, Bernard A, Daddinounou S, Bouchiat V, Guéron S, Ferrier M, Montambaux G, Bouchiat H. Detection of graphene's divergent orbital diamagnetism at the Dirac point. Science 2021; 374:1399-1402. [PMID: 34882473 DOI: 10.1126/science.abf9396] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- J Vallejo Bustamante
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - N J Wu
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France.,Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay, Orsay, France
| | - C Fermon
- SPEC, CEA, CNRS, Université Paris-Saclay, 91191 Gif-sur-Yvette, France
| | | | - T Wakamura
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France.,NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, Japan
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Pellegrin
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - A Bernard
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - S Daddinounou
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - V Bouchiat
- Néel Institute, CNRS, 38000 Grenoble, France
| | - S Guéron
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - M Ferrier
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - G Montambaux
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
| | - H Bouchiat
- Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France
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233
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Zhang YH, Sheng DN, Vishwanath A. SU(4) Chiral Spin Liquid, Exciton Supersolid, and Electric Detection in Moiré Bilayers. PHYSICAL REVIEW LETTERS 2021; 127:247701. [PMID: 34951785 DOI: 10.1103/physrevlett.127.247701] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 09/09/2021] [Accepted: 11/19/2021] [Indexed: 06/14/2023]
Abstract
We propose a moiré bilayer as a platform where exotic quantum phases can be stabilized and electrically detected. Moiré bilayers consist of two separate moiré superlattice layers coupled through the interlayer Coulomb repulsion. In the small distance limit, an SU(4) spin can be formed by combining layer pseudospin and the real spin. As a concrete example, we study an SU(4) spin model on triangular lattice in the fundamental representation. By tuning a three-site ring exchange term K∼(t^{3}/U^{2}), we find the SU(4) symmetric crystallized phase and an SU(4)_{1} chiral spin liquid at the balanced filling. We also predict two different exciton supersolid phases with interlayer coherence at imbalanced filling under displacement field. Especially, the system can simulate an SU(2) Bose-Einstein condensation by injecting interlayer excitons into the magnetically ordered Mott insulator at the layer polarized limit. Smoking gun evidences of these phases can be obtained by measuring the pseudospin transport in the counterflow channel.
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Affiliation(s)
- Ya-Hui Zhang
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - D N Sheng
- Department of Physics and Astronomy, California State University, Northridge, California 91330, USA
| | - Ashvin Vishwanath
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
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234
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Wang J, Cano J, Millis AJ, Liu Z, Yang B. Exact Landau Level Description of Geometry and Interaction in a Flatband. PHYSICAL REVIEW LETTERS 2021; 127:246403. [PMID: 34951815 DOI: 10.1103/physrevlett.127.246403] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2021] [Accepted: 10/08/2021] [Indexed: 06/14/2023]
Abstract
Flatbands appear in many condensed matter systems, including the two-dimensional electron gas in a high magnetic field, correlated materials, and moiré heterostructures. They are characterized by intrinsic geometric properties such as the Berry curvature and Fubini-Study metric. The influence of the band geometry on electron-electron interaction is difficult to understand analytically because the geometry is in general nonuniform in momentum space. In this work, we study the topological flatband of Chern number C=1 with a momentum-dependent but positive definite Berry curvature that fluctuates in sync with Fubini-Study metric. We derive an exact correspondence between such ideal flatbands and Landau levels and show that the band geometry fluctuation gives rise to a new type of interaction in the corresponding Landau levels that depends on the center of mass of two particles. We characterize such interactions by generalizing the usual Haldane pseudopotentials. This mapping gives exact zero-energy ground states for short-ranged repulsive generalized pseudopotentials in flatbands, in analogy to fractional quantum Hall systems. Driving the center-of-mass interactions beyond the repulsive regime leads to a dramatic reconstruction of the ground states towards gapless phases. The generalized pseudopotential could be a useful basis for future numerical studies.
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Affiliation(s)
- Jie Wang
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
| | - Jennifer Cano
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11974, USA
| | - Andrew J Millis
- Center for Computational Quantum Physics, Flatiron Institute, 162 5th Avenue, New York, New York 10010, USA
- Department of Physics, Columbia University, 538 W 120th Street, New York, New York 10027, USA
| | - Zhao Liu
- Zhejiang Institute of Modern Physics, Zhejiang University, Hangzhou 310027, China
| | - Bo Yang
- Division of Physics and Applied Physics, Nanyang Technological University, 637371 Singapore
- Institute of High Performance Computing, A*STAR, 138632 Singapore
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235
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Evidence for unconventional superconductivity in twisted bilayer graphene. Nature 2021; 600:240-245. [PMID: 34670267 DOI: 10.1038/s41586-021-04121-x] [Citation(s) in RCA: 62] [Impact Index Per Article: 20.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2021] [Accepted: 10/11/2021] [Indexed: 11/08/2022]
Abstract
The emergence of superconductivity and correlated insulators in magic-angle twisted bilayer graphene (MATBG) has raised the intriguing possibility that its pairing mechanism is distinct from that of conventional superconductors1-4, as described by the Bardeen-Cooper-Schrieffer (BCS) theory. However, recent studies have shown that superconductivity persists even when Coulomb interactions are partially screened5,6. This suggests that pairing in MATBG might be conventional in nature and a consequence of the large density of states of its flat bands. Here we combine tunnelling and Andreev reflection spectroscopy with a scanning tunnelling microscope to observe several key experimental signatures of unconventional superconductivity in MATBG. We show that the tunnelling spectra below the transition temperature Tc are inconsistent with those of a conventional s-wave superconductor, but rather resemble those of a nodal superconductor with an anisotropic pairing mechanism. We observe a large discrepancy between the tunnelling gap ΔT, which far exceeds the mean-field BCS ratio (with 2ΔT/kBTc ~ 25), and the gap ΔAR extracted from Andreev reflection spectroscopy (2ΔAR/kBTc ~ 6). The tunnelling gap persists even when superconductivity is suppressed, indicating its emergence from a pseudogap phase. Moreover, the pseudogap and superconductivity are both absent when MATBG is aligned with hexagonal boron nitride. These findings and other observations reported here provide a preponderance of evidence for a non-BCS mechanism for superconductivity in MATBG.
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236
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Li T, Jiang S, Shen B, Zhang Y, Li L, Tao Z, Devakul T, Watanabe K, Taniguchi T, Fu L, Shan J, Mak KF. Quantum anomalous Hall effect from intertwined moiré bands. Nature 2021; 600:641-646. [PMID: 34937897 DOI: 10.1038/s41586-021-04171-1] [Citation(s) in RCA: 91] [Impact Index Per Article: 30.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Accepted: 10/20/2021] [Indexed: 11/09/2022]
Abstract
Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moiré materials provide a highly tuneable platform for studies of electron correlation1-12. Correlation-driven phenomena, including the Mott insulator2-5, generalized Wigner crystals2,6,9, stripe phases10 and continuous Mott transition11,12, have been demonstrated. However, non-trivial band topology has remained unclear. Here we report the observation of a quantum anomalous Hall effect in AB-stacked MoTe2 /WSe2 moiré heterobilayers. Unlike in the AA-stacked heterobilayers11, an out-of-plane electric field not only controls the bandwidth but also the band topology by intertwining moiré bands centred at different layers. At half band filling, corresponding to one particle per moiré unit cell, we observe quantized Hall resistance, h/e2 (with h and e denoting the Planck's constant and electron charge, respectively), and vanishing longitudinal resistance at zero magnetic field. The electric-field-induced topological phase transition from a Mott insulator to a quantum anomalous Hall insulator precedes an insulator-to-metal transition. Contrary to most known topological phase transitions13, it is not accompanied by a bulk charge gap closure. Our study paves the way for discovery of emergent phenomena arising from the combined influence of strong correlation and topology in semiconductor moiré materials.
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Affiliation(s)
- Tingxin Li
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.,Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Shengwei Jiang
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.,Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Bowen Shen
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Yang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Lizhong Li
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Zui Tao
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Trithep Devakul
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jie Shan
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA. .,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
| | - Kin Fai Mak
- School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA. .,Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
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237
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Xie Y, Pierce AT, Park JM, Parker DE, Khalaf E, Ledwith P, Cao Y, Lee SH, Chen S, Forrester PR, Watanabe K, Taniguchi T, Vishwanath A, Jarillo-Herrero P, Yacoby A. Fractional Chern insulators in magic-angle twisted bilayer graphene. Nature 2021; 600:439-443. [PMID: 34912084 PMCID: PMC8674130 DOI: 10.1038/s41586-021-04002-3] [Citation(s) in RCA: 94] [Impact Index Per Article: 31.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2021] [Accepted: 09/07/2021] [Indexed: 11/12/2022]
Abstract
Fractional Chern insulators (FCIs) are lattice analogues of fractional quantum Hall states that may provide a new avenue towards manipulating non-Abelian excitations. Early theoretical studies1-7 have predicted their existence in systems with flat Chern bands and highlighted the critical role of a particular quantum geometry. However, FCI states have been observed only in Bernal-stacked bilayer graphene (BLG) aligned with hexagonal boron nitride (hBN)8, in which a very large magnetic field is responsible for the existence of the Chern bands, precluding the realization of FCIs at zero field. By contrast, magic-angle twisted BLG9-12 supports flat Chern bands at zero magnetic field13-17, and therefore offers a promising route towards stabilizing zero-field FCIs. Here we report the observation of eight FCI states at low magnetic field in magic-angle twisted BLG enabled by high-resolution local compressibility measurements. The first of these states emerge at 5 T, and their appearance is accompanied by the simultaneous disappearance of nearby topologically trivial charge density wave states. We demonstrate that, unlike the case of the BLG/hBN platform, the principal role of the weak magnetic field is merely to redistribute the Berry curvature of the native Chern bands and thereby realize a quantum geometry favourable for the emergence of FCIs. Our findings strongly suggest that FCIs may be realized at zero magnetic field and pave the way for the exploration and manipulation of anyonic excitations in flat moiré Chern bands.
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Affiliation(s)
- Yonglong Xie
- Department of Physics, Harvard University, Cambridge, MA, USA.
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Andrew T Pierce
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Jeong Min Park
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Daniel E Parker
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Eslam Khalaf
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Patrick Ledwith
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Yuan Cao
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Seung Hwan Lee
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Shaowen Chen
- Department of Physics, Harvard University, Cambridge, MA, USA
| | | | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Material Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Material Science, Tsukuba, Japan
| | | | | | - Amir Yacoby
- Department of Physics, Harvard University, Cambridge, MA, USA.
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238
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Li Y, Wang X, Tang D, Wang X, Watanabe K, Taniguchi T, Gamelin DR, Cobden DH, Yankowitz M, Xu X, Li J. Unraveling Strain Gradient Induced Electromechanical Coupling in Twisted Double Bilayer Graphene Moiré Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2105879. [PMID: 34632646 DOI: 10.1002/adma.202105879] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Revised: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Moiré superlattices of 2D materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast (≈8°) between opposite flexoelectric polarizations is reported in twisted bilayer graphene (tBG), though theoretically predicted value is 180°. Here a methodology is developed to extract intrinsic moiré flexoelectricity using twisted double bilayer graphene (tDBG) as a model system, probed by lateral PFM. For small twist angle samples, it is found that a vectorial decomposition is essential to recover the small intrinsic flexoelectric response at domain walls from a large background signal. The obtained threefold symmetry of commensurate domains with significant flexoelectric response at domain walls is fully consistent with the theoretical calculations. Incommensurate domains in tDBG with relatively large twist angles can also be observed by this technique. A general strategy is provided here for unraveling intrinsic flexoelectricity in van der Waals moiré superlattices while providing insights into engineered symmetry breaking in centrosymmetric materials.
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Affiliation(s)
- Yuhao Li
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Xiao Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Deqi Tang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
| | - Xi Wang
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
- Department of Chemistry, University of Washington, Seattle, WA, 98195, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, WA, 98195, USA
| | - David H Cobden
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Matthew Yankowitz
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China
- Guangdong Provisional Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
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239
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Lado JL. Putting a twist on spintronics. Science 2021; 374:1048-1049. [PMID: 34822287 DOI: 10.1126/science.abm0091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Jose L Lado
- Department of Applied Physics, Aalto University, 00076 Aalto, Espoo, Finland
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240
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Chou YZ, Wu F, Sau JD, Das Sarma S. Correlation-Induced Triplet Pairing Superconductivity in Graphene-Based Moiré Systems. PHYSICAL REVIEW LETTERS 2021; 127:217001. [PMID: 34860110 DOI: 10.1103/physrevlett.127.217001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
Motivated by the possible non-spin-singlet superconductivity in the magic-angle twisted trilayer graphene experiment, we investigate the triplet-pairing superconductivity arising from a correlation-induced spin-fermion model of Dirac fermions with spin, valley, and sublattice degrees of freedom. We find that the f-wave pairing is favored due to the valley-sublattice structure, and the superconducting state is time-reversal symmetric, fully gapped, and nontopological. With a small in-plane magnetic field, the superconducting state becomes partially polarized, and the transition temperature can be slightly enhanced. Our results apply qualitatively to Dirac fermions for the triplet-pairing superconductivity in graphene-based moiré systems, which is fundamentally distinct from triplet superconductivity in ^{3}He and ferromagnetic superconductors.
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Affiliation(s)
- Yang-Zhi Chou
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jay D Sau
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Sankar Das Sarma
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
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241
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Devakul T, Crépel V, Zhang Y, Fu L. Magic in twisted transition metal dichalcogenide bilayers. Nat Commun 2021; 12:6730. [PMID: 34795273 PMCID: PMC8602625 DOI: 10.1038/s41467-021-27042-9] [Citation(s) in RCA: 67] [Impact Index Per Article: 22.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Accepted: 11/01/2021] [Indexed: 11/09/2022] Open
Abstract
The long-wavelength moiré superlattices in twisted 2D structures have emerged as a highly tunable platform for strongly correlated electron physics. We study the moiré bands in twisted transition metal dichalcogenide homobilayers, focusing on WSe2, at small twist angles using a combination of first principles density functional theory, continuum modeling, and Hartree-Fock approximation. We reveal the rich physics at small twist angles θ < 4∘, and identify a particular magic angle at which the top valence moiré band achieves almost perfect flatness. In the vicinity of this magic angle, we predict the realization of a generalized Kane-Mele model with a topological flat band, interaction-driven Haldane insulator, and Mott insulators at the filling of one hole per moiré unit cell. The combination of flat dispersion and uniformity of Berry curvature near the magic angle holds promise for realizing fractional quantum anomalous Hall effect at fractional filling. We also identify twist angles favorable for quantum spin Hall insulators and interaction-induced quantum anomalous Hall insulators at other integer fillings.
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Affiliation(s)
- Trithep Devakul
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Valentin Crépel
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Yang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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242
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Stepanov P, Xie M, Taniguchi T, Watanabe K, Lu X, MacDonald AH, Bernevig BA, Efetov DK. Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2021; 127:197701. [PMID: 34797145 DOI: 10.1103/physrevlett.127.197701] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 10/13/2021] [Indexed: 05/12/2023]
Abstract
The discovery of magic angle twisted bilayer graphene has unveiled a rich variety of superconducting, magnetic, and topologically nontrivial phases. Here, we show that the zero-field states at odd integer filling factors in h-BN nonaligned devices are consistent with symmetry broken Chern insulators, as is evidenced by the observation of the anomalous Hall effect near moiré cell filling factor ν=+1. The corresponding Chern insulator has a Chern number C=±1 and a relatively high Curie temperature of T_{c}≈4.5 K. In a perpendicular magnetic field above B>0.5 T we observe a transition of the ν=+1 Chern insulator from Chern number C=±1 to C=3, characterized by a quantized Hall plateau with R_{yx}=h/3e^{2}. These observations demonstrate that interaction-induced symmetry breaking leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B field. In addition, the device reveals strong superconducting phases with critical temperatures of up to T_{c}≈3.5 K. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.
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Affiliation(s)
- Petr Stepanov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Ming Xie
- Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
| | - Takashi Taniguchi
- National Institute of Material Sciences, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- National Institute of Material Sciences, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xiaobo Lu
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Allan H MacDonald
- Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA
| | - B Andrei Bernevig
- Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
| | - Dmitri K Efetov
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
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243
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Xie M, MacDonald AH. Weak-Field Hall Resistivity and Spin-Valley Flavor Symmetry Breaking in Magic-Angle Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2021; 127:196401. [PMID: 34797159 DOI: 10.1103/physrevlett.127.196401] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2020] [Revised: 07/27/2021] [Accepted: 10/07/2021] [Indexed: 06/13/2023]
Abstract
Near a magic twist angle, the lowest energy conduction and valence bands of bilayer graphene moiré superlattices become extremely narrow. The band dispersion that remains is sensitive to the moiré's strain pattern, nonlocal tunneling between layers, and filling-factor-dependent Hartree and exchange band renormalizations. In this Letter, we analyze the influence of these band-structure details on the pattern of flavor symmetry breaking observed in this narrow band system and on the associated pattern of Fermi surface reconstructions revealed by weak-field Hall and Shubnikov-de Haas magnetotransport measurements.
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Affiliation(s)
- Ming Xie
- Physics Department, University of Texas at Austin, Austin, Texas 78712, USA
| | - A H MacDonald
- Physics Department, University of Texas at Austin, Austin, Texas 78712, USA
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244
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Wilson NP, Yao W, Shan J, Xu X. Excitons and emergent quantum phenomena in stacked 2D semiconductors. Nature 2021; 599:383-392. [PMID: 34789905 DOI: 10.1038/s41586-021-03979-1] [Citation(s) in RCA: 81] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Accepted: 09/01/2021] [Indexed: 11/09/2022]
Abstract
The design and control of material interfaces is a foundational approach to realize technologically useful effects and engineer material properties. This is especially true for two-dimensional (2D) materials, where van der Waals stacking allows disparate materials to be freely stacked together to form highly customizable interfaces. This has underpinned a recent wave of discoveries based on excitons in stacked double layers of transition metal dichalcogenides (TMDs), the archetypal family of 2D semiconductors. In such double-layer structures, the elegant interplay of charge, spin and moiré superlattice structure with many-body effects gives rise to diverse excitonic phenomena and correlated physics. Here we review some of the recent discoveries that highlight the versatility of TMD double layers to explore quantum optics and many-body effects. We identify outstanding challenges in the field and present a roadmap for unlocking the full potential of excitonic physics in TMD double layers and beyond, such as incorporating newly discovered ferroelectric and magnetic materials to engineer symmetries and add a new level of control to these remarkable engineered materials.
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Affiliation(s)
- Nathan P Wilson
- Department of Physics, University of Washington, Seattle, WA, USA.,Walter Schottky Institute, Technical University of Munich, Garching, Germany.,Munich Centre for Quantum Science and Technology, Munich, Germany
| | - Wang Yao
- Department of Physics, University of Hong Kong, Hong Kong, China.,HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA. .,Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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245
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Chou YZ, Wu F, Sau JD, Das Sarma S. Acoustic-Phonon-Mediated Superconductivity in Rhombohedral Trilayer Graphene. PHYSICAL REVIEW LETTERS 2021; 127:187001. [PMID: 34767382 DOI: 10.1103/physrevlett.127.187001] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2021] [Accepted: 09/21/2021] [Indexed: 05/27/2023]
Abstract
Motivated by the observation of two distinct superconducting phases in the moiréless ABC-stacked rhombohedral trilayer graphene, we investigate the electron-acoustic-phonon coupling as a possible pairing mechanism. We predict the existence of superconductivity with the highest T_{c}∼3 K near the Van Hove singularity. Away from the Van Hove singularity, T_{c} remains finite in a wide range of doping. In our model, the s-wave spin-singlet and f-wave spin-triplet pairings yield the same T_{c}, while other pairing states have negligible T_{c}. Our theory provides a simple explanation for the two distinct superconducting phases in the experiment and suggests that superconductivity and other interaction-driven phases (e.g., ferromagnetism) can have different origins.
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Affiliation(s)
- Yang-Zhi Chou
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jay D Sau
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Sankar Das Sarma
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
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Szentpéteri B, Rickhaus P, de Vries FK, Márffy A, Fülöp B, Tóvári E, Watanabe K, Taniguchi T, Kormányos A, Csonka S, Makk P. Tailoring the Band Structure of Twisted Double Bilayer Graphene with Pressure. NANO LETTERS 2021; 21:8777-8784. [PMID: 34662136 PMCID: PMC8554798 DOI: 10.1021/acs.nanolett.1c03066] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 10/11/2021] [Indexed: 05/21/2023]
Abstract
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which gave a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing of the Fermi level and hence the electron density and also allows tuning of the interlayer potential, giving further control over band gaps. Here, we demonstrate that by application of hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically nontrivial band gap opens at the charge neutrality point at zero displacement field.
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Affiliation(s)
- Bálint Szentpéteri
- Department
of Physics, Budapest University of Technology
and Economics and Nanoelectronics Momentum Research Group of the Hungarian
Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
| | - Peter Rickhaus
- Solid
State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland
| | | | - Albin Márffy
- Department
of Physics, Budapest University of Technology
and Economics and Correlated van der Waals Structures Momentum Research
Group of the Hungarian Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
| | - Bálint Fülöp
- Department
of Physics, Budapest University of Technology
and Economics and Nanoelectronics Momentum Research Group of the Hungarian
Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
| | - Endre Tóvári
- Department
of Physics, Budapest University of Technology
and Economics and Nanoelectronics Momentum Research Group of the Hungarian
Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andor Kormányos
- Department
of Physics of Complex Systems, Eötvös
Loránd University, Pázmány P. s. 1/A, 1117 Budapest, Hungary
| | - Szabolcs Csonka
- Department
of Physics, Budapest University of Technology
and Economics and Nanoelectronics Momentum Research Group of the Hungarian
Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
| | - Péter Makk
- Department
of Physics, Budapest University of Technology
and Economics and Correlated van der Waals Structures Momentum Research
Group of the Hungarian Academy of Sciences, Budafoki ut 8, 1111 Budapest, Hungary
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247
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Liu J, Hesjedal T. Magnetic Topological Insulator Heterostructures: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2102427. [PMID: 34665482 DOI: 10.1002/adma.202102427] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 06/05/2021] [Indexed: 06/13/2023]
Abstract
Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin-orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)2 Te3 films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.
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Affiliation(s)
- Jieyi Liu
- Clarendon Laboratory, Department of Physics University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Thorsten Hesjedal
- Clarendon Laboratory, Department of Physics University of Oxford, Parks Road, Oxford, OX1 3PU, UK
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248
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Choi YW, Choi HJ. Dichotomy of Electron-Phonon Coupling in Graphene Moiré Flat Bands. PHYSICAL REVIEW LETTERS 2021; 127:167001. [PMID: 34723599 DOI: 10.1103/physrevlett.127.167001] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
Graphene moiré superlattices are outstanding platforms to study correlated electron physics and superconductivity with exceptional tunability. However, robust superconductivity has been measured only in magic-angle twisted bilayer graphene (MA-TBG) and magic-angle twisted trilayer graphene (MA-TTG). The absence of a superconducting phase in certain moiré flat bands raises a question on the superconducting mechanism. In this work, we investigate electronic structure and electron-phonon coupling in graphene moiré superlattices based on atomistic calculations. We show that electron-phonon coupling strength λ is dramatically different among graphene moiré flat bands. The total strength λ is very large (λ>1) for MA-TBG and MA-TTG, both of which display robust superconductivity in experiments. However, λ is an order of magnitude smaller in twisted double bilayer graphene (TDBG) and twisted monolayer-bilayer graphene (TMBG) where superconductivity is reportedly rather weak or absent. We find that the Bernal-stacked layers in TDBG and TMBG induce sublattice polarization in the flat-band states, suppressing intersublattice electron-phonon matrix elements. We also obtain the nonadiabatic superconducting transition temperature T_{c} that matches well with the experimental results. Our results clearly show a correlation between strong electron-phonon coupling and experimental observations of robust superconductivity.
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Affiliation(s)
- Young Woo Choi
- Department of Physics, Yonsei University, Seoul 03722, Korea
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249
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Geisenhof FR, Winterer F, Seiler AM, Lenz J, Xu T, Zhang F, Weitz RT. Quantum anomalous Hall octet driven by orbital magnetism in bilayer graphene. Nature 2021; 598:53-58. [PMID: 34616059 DOI: 10.1038/s41586-021-03849-w] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2021] [Accepted: 07/22/2021] [Indexed: 11/09/2022]
Abstract
The quantum anomalous Hall (QAH) effect-a macroscopic manifestation of chiral band topology at zero magnetic field-has been experimentally realized only by the magnetic doping of topological insulators1-3 and the delicate design of moiré heterostructures4-8. However, the seemingly simple bilayer graphene without magnetic doping or moiré engineering has long been predicted to host competing ordered states with QAH effects9-11. Here we explore states in bilayer graphene with a conductance of 2 e2 h-1 (where e is the electronic charge and h is Planck's constant) that not only survive down to anomalously small magnetic fields and up to temperatures of five kelvin but also exhibit magnetic hysteresis. Together, the experimental signatures provide compelling evidence for orbital-magnetism-driven QAH behaviour that is tunable via electric and magnetic fields as well as carrier sign. The observed octet of QAH phases is distinct from previous observations owing to its peculiar ferrimagnetic and ferrielectric order that is characterized by quantized anomalous charge, spin, valley and spin-valley Hall behaviour9.
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Affiliation(s)
- Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Felix Winterer
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Anna M Seiler
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Jakob Lenz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany
| | - Tianyi Xu
- Department of Physics, University of Texas at Dallas, Richardson, TX, USA
| | - Fan Zhang
- Department of Physics, University of Texas at Dallas, Richardson, TX, USA.
| | - R Thomas Weitz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Munich, Germany. .,Center for Nanoscience (CeNS), Munich, Germany. .,Munich Center for Quantum Science and Technology (MCQST), Munich, Germany. .,1st Physical Institute, Faculty of Physics, University of Göttingen, Göttingen, Germany.
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250
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Li T, Zhu J, Tang Y, Watanabe K, Taniguchi T, Elser V, Shan J, Mak KF. Charge-order-enhanced capacitance in semiconductor moiré superlattices. NATURE NANOTECHNOLOGY 2021; 16:1068-1072. [PMID: 34426680 DOI: 10.1038/s41565-021-00955-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2021] [Accepted: 07/01/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals moiré materials have emerged as a highly controllable platform to study electronic correlation phenomena1-17. Robust correlated insulating states have recently been discovered at both integer and fractional filling factors of semiconductor moiré systems10-17. In this study we explored the thermodynamic properties of these states by measuring the gate capacitance of MoSe2/WS2 moiré superlattices. We observed a series of incompressible states for filling factors 0-8 and anomalously large capacitance in the intervening compressible regions. The anomalously large capacitance, which was nearly 60% above the device's geometrical capacitance, was most pronounced at small filling factors, below the melting temperature of the charge-ordered states, and for small sample-gate separation. It is a manifestation of the device-geometry-dependent Coulomb interaction between electrons and phase mixing of the charge-ordered states. Based on these results, we were able to extract the thermodynamic gap of the correlated insulating states and the device's electronic entropy and specific heat capacity. Our findings establish capacitance as a powerful probe of the correlated states in semiconductor moiré systems and demonstrate control of these states via sample-gate coupling.
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Affiliation(s)
- Tingxin Li
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Jiacheng Zhu
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Yanhao Tang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - Veit Elser
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
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