Resistive Switching Memory Devices Based on Proteins

Interface Phenomena in Molecular Junctions through Noncovalent Interactions

Noncovalent interactions, both between molecules and at the molecule-electrode interfaces, play essential roles in enabling dynamic and reversible molecular behaviors, including self-assembly, recognition, and various functional properties. In macroscopic ensemble systems, these interfacial phenomena often exhibit emergent properties that arise from the synergistic interplay of multiple noncovalent interactions. However, at the single-molecule scale, precisely distinguishing, characterizing, and controlling individual noncovalent interactions remains a significant challenge. Molecular electronics offers a unique platform for constructing and characterizing both intermolecular and molecule-electrode interfaces governed by noncovalent interactions, enabling the isolated study of these fundamental interactions. Furthermore, precise control over these interfaces through noncovalent interactions facilitates the development of enhanced molecular devices. This review examines the characterization of interfacial phenomena arising from noncovalent interactions through single-molecule electrical measurements and explores their applications in molecular devices. We begin by discussing the construction of stable molecular junctions through intermolecular and molecule-electrode interfaces, followed by an analysis of electron tunneling mechanisms mediated by key noncovalent interactions and their modulation methods. We then investigate how noncovalent interactions enhance device sensitivity, stability, and functionality, establishing design principles for next-generation molecular electronics. We have also explored the potential of noncovalent interactions for bottom-up self-assembled molecular devices. The review concludes by addressing the opportunities and challenges in scaling up molecular electronics through noncovalent interactions.

Insights into Materials, Physics, and Applications in Flexible and Wearable Acoustic Sensing Technology

Sound plays a crucial role in the perception of the world. It allows to communicate, learn, and detect potential dangers, diagnose diseases, and much more. However, traditional acoustic sensors are limited in their form factors, being rigid and cumbersome, which restricts their potential applications. Recently, acoustic sensors have made significant advancements, transitioning from rudimentary forms to wearable devices and smart everyday clothing that can conform to soft, curved, and deformable surfaces or surroundings. In this review, the latest scientific and technological breakthroughs with insightful analysis in materials, physics, design principles, fabrication strategies, functions, and applications of flexible and wearable acoustic sensing technology are comprehensively explored. The new generation of acoustic sensors that can recognize voice, interact with machines, control robots, enable marine positioning and localization, monitor structural health, diagnose human vital signs in deep tissues, and perform organ imaging is highlighted. These innovations offer unique solutions to significant challenges in fields such as healthcare, biomedicine, wearables, robotics, and metaverse. Finally, the existing challenges and future opportunities in the field are addressed, providing strategies to advance acoustic sensing technologies for intriguing real-world applications and inspire new research directions.

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 102), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

Achieving Reliable and Ultrafast Memristors via Artificial Filaments in Silk Fibroin

The practical implementation of memristors in neuromorphic computing and biomimetic sensing suffers from unexpected temporal and spatial variations due to the stochastic formation and rupture of conductive filaments (CFs). Here, the biocompatible silk fibroin (SF) is patterned with an on-demand nanocone array by using thermal scanning probe lithography (t-SPL) to guide and confine the growth of CFs in the silver/SF/gold (Ag/SF/Au) memristor. Benefiting from the high fabrication controllability, cycle-to-cycle (temporal) standard deviation of the set voltage for the structured memristor is significantly reduced by ≈95.5% (from 1.535 to 0.0686 V) and the device-to-device (spatial) standard deviation is also reduced to 0.0648 V. Besides, the statistical relationship between the structural nanocone design and the resultant performance is confirmed, optimizing at the small operation voltage (≈0.5 V) and current (100 nA), ultrafast switching speed (sub-100 ns), large on/off ratio (104 ), and the smallest switching slope (SS < 0.01 mV dec-1 ). Finally, the short-term plasticity and leaky integrated-and-fire behavior are emulated, and a reliable thermal nociceptor system is demonstrated for practical neuromorphic applications.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Recent Progress of Biomaterials-Based Epidermal Electronics for Healthcare Monitoring and Human-Machine Interaction

Epidermal electronics offer an important platform for various on-skin applications including electrophysiological signals monitoring and human-machine interactions (HMI), due to their unique advantages of intrinsic softness and conformal interfaces with skin. The widely used nondegradable synthetic materials may produce massive electronic waste to the ecosystem and bring safety issues to human skin. However, biomaterials extracted from nature are promising to act as a substitute material for the construction of epidermal electronics, owing to their diverse characteristics of biocompatibility, biodegradability, sustainability, low cost and natural abundance. Therefore, the development of natural biomaterials holds great prospects for advancement of high-performance sustainable epidermal electronics. Here, we review the recent development on different types of biomaterials including proteins and polysaccharides for multifunctional epidermal electronics. Subsequently, the applications of biomaterials-based epidermal electronics in electrophysiological monitoring and HMI are discussed, respectively. Finally, the development situation and future prospects of biomaterials-based epidermal electronics are summarized. We expect that this review can provide some inspirations for the development of future, sustainable, biomaterials-based epidermal electronics.

Polyoxometalate-Viologen Thermochromic Hybrids for Organic Amine Detectors and Memristors with Temperature-Regulating Resistance Switching Characteristics

There are relatively few reports on the combination of viologen and polyoxometalates (POMs). Herein, we successfully synthesized three viologen-POM-based compounds by in situ transformation of ligands under hydrothermal conditions, namely, {M^II(1,4-cby)₂[H₂(γ-Mo₈O₂₆)]}·nH₂O (1: M = Ni, n = 4; 2: M = Co, n = 6), and [Ni^II(1,3-cby)(H₂O)₄(β-Mo₈O₂₆)_0.5]·2H₂O (3) (1,4-cby·Cl = 1-(4-carboxy-benzyl)-[4,4']bipyridinyl-1-ium, 1,3-cby·Cl = 1-(3-carboxy-benzyl)-[4,4']bipyridinyl-1-ium). Isostructural compounds 1 and 2 exhibit two-dimensional (2D) layer structures with POMs as linking nodes, while compound 3 shows a one-dimensional (1D) metal-organic chain with dissociative POM anions. When the temperature increases, compounds 1-3 show good reversible thermochromism properties and also have a fluorescence quenching effect. Moreover, compounds 1-3 can also be used as detectors for organic amines, especially in the atmosphere of ammonia, ethylenediamine, and diethylamine with an obvious discoloration effect. In addition, compound 1 was used as a material for the preparation of memristors with superior properties (distinct temperature-adjusted resistive switching properties). It shows bipolar resistive switching (RS) behavior at different temperatures of 20, 50, and 100 °C. The results show that the 1-based memristor has good thermal stability, which is important for high-temperature environment applications. It also shows that crystalline viologen-POM-based compounds are ideal candidates for making memristors.

Enzymatic Crosslinked Silk Fibroin Hydrogel for Biodegradable Electronic Skin and Pulse Waveform Measurements

The development of a portable, controllable, and environmentally friendly electronic skin (e-skin) is highly desirable; however, it presents a major challenge. Herein, a biocompatible, biodegradable, and easily usable hydrogel was designed and fabricated as e-skin to enable the transmission of information regarding the spatial pressure distribution. Silk fibroin (SF) was used as the hydrogel skeleton, which endowed the hydrogel with intelligent mechanical sensitivity. During its conditioning in weakly acidic media, the density of the enzymatic crosslink increased and a dense network was formed due to the formation of covalent/hydrogen bonds. Additionally, a conductive SF/polyvinyl alcohol (PVA) hybrid film was molded as a flexible electrode after graphite deposition. The above SF sensing unit based on SF hydrogels and SF/PVA hybrid films showed high strain sensitivity (4.78), fast responsiveness (<0.1 s), good cycling stability (≥10,000), excellent biocompatibility, and biodegradability. Importantly, a coplanar 8 × 8 pixel SF-based e-skin array was successfully fabricated and applied for 3D signal transmission of the object. The SF-based e-skin was capable of precisely tracking the changes in the pulse pressure, the movement of the finger joint, and the vibrations of the vocal cord. Therefore, the current findings provide a solid foundation for future studies exploring the next generation of electronic devices.

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

A Hierarchically Encoded Data Storage Device with Controlled Transiency

In the era of information explosion, high-security and high-capacity data storage technology attracts more and more attention. Physically transient electronics, a form of electronics that can physically disappear with precisely controlled degradation behaviors, paves the way for secure data storage. Herein, the authors report a silk-based hierarchically encoded data storage device (HEDSD) with controlled transiency. The HEDSD can store electronic, photonic, and optical information simultaneously by synergistically integrating a resistive switching memory (ReRAM), a terahertz metamaterial device, and a diffractive optical element, respectively. These three data storage units have shared materials and structures but diverse encoding mechanisms, which increases the degree of complexity and capacity of stored information. Silk plays an important role as a building material in the HEDSD thanks to its excellent mechanical, optical, and electrical properties and controlled transiency as a naturally extracted protein. By controlling the degradation rate of storage units of the silk-based HEDSD, different degradation modes of the HEDSD, and multilevel information encryption/decryption have been realized. Compared with the conventional memory devices, as-reported silk-based HEDSD can store multilevel complex information and realize multilevel information encryption and decryption, which is highly desirable to fulfill the future demands of secure memory systems and implantable storage devices.

Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage

Recently, reticular materials, such as metal-organic frameworks and covalent organic frameworks, have been proposed as an active insulating layer in resistive switching memory systems through their chemically tunable porous structure. A resistive random access memory (RRAM) cell, a digital memristor, is one of the most outstanding emergent memory devices that achieves high-density electrical information storage with variable electrical resistance states between two terminals. The overall design of the RRAM devices comprises an insulating layer sandwiched between two metal electrodes (metal/insulator/metal). RRAM devices with fast switching speeds and enhanced storage density have the potential to be manufactured with excellent scalability owing to their relatively simple device architecture. In this review, recent progress on the development of reticular material-based RRAM devices and the study of their operational mechanisms are reviewed, and new challenges and future perspectives related to reticular material-based RRAM are discussed.

Bio-memristors based on silk fibroin

Bio-memristors constitute candidates for the next generation of non-volatile storage and bionic synapses due to their biocompatibility, environmental benignity, sustainability, flexibility, degradability, and impressive memristive performance. Silk fibroin (SF), a natural and abundant biomaterial with excellent mechanical, optical, electrical, and structure-adjustable properties as well as being easy to process, has been utilized and shown to have potential in the construction of bio-memristors. Here, we first summarize the fundamental mechanisms of bio-memristors based on SF. Then, the latest achievements and developments of pristine and composited SF-based memristors are highlighted, followed by the integration of memristive devices. Finally, the challenges and insights associated with SF-based bio-memristors are presented. Advances in SF-based bio-memristors will open new avenues in the design and integration of high-performance bio-integrated systems and facilitate their application in logic operations, complex circuits, and neural networks.

Metal Organic Spin Transistor

Organic molecules and specifically bio-organic systems are attractive for applications due to their low cost, variability, environmental friendliness, and facile manufacturing in a bottom-up fashion. However, due to their relatively low conductivity, their actual application is very limited. Chiral metallo-bio-organic crystals, on the other hand, have improved conduction and in addition interesting magnetic properties. We developed a spin transistor using these crystals and based on the chiral-induced spin selectivity effect. This device features a memristor type behavior, which depend on trapping both charges and spins. The spin properties are monitored by Hall signal and by an external magnetic field. The spin transistor exhibits nonlinear drain-source currents, with multilevel controlled states generated by the magnetization of the source. Varying the source magnetization enables a six-level readout for the two-terminal device. The simplicity of the device paves the way for its technological application in organic electronics and bioelectronics.

High performance and low power consumption resistive random access memory with Ag/Fe2O3/Pt structure

Due to magnetic field tunability and the abundance of iron in the Earth's crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage (>1 V) and small storage window (<100) limit its application. In this work, the devices with simple Ag/Fe₂O₃/Pt structure exhibit typical bipolar resistive switching with ultralow set voltage (V_set) of 0.16 V, ultralow reset voltage (V_reset) of -0.04 V, high OFF/ON resistance ratio of 10³, excellent cycling endurance more than 10⁴and good retention time longer than 10⁴s. Each major parameter has about an order of magnitude improvement compared to the previous data. The devices demonstrate outstanding stable low power consumption quality. Based on the analysis of the experimental results, a percolation model of silver ion migration was established and confirmed that low operation voltage is attributed to the amorphous oxide layer with large porosity. During electrical testing, the compliance current (I_c) and maximum reset voltage (V_max) can also affect the device performance. This discovery suggests Fe₂O₃memristor has significant potential for application and provides a new idea for the realization of high-performance low-power RRAM.

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.

Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin

Biomemristors have attracted significant attention because of their potential applications in logic operations, nonvolatile memory, and synaptic emulators, thus leading to the urgent need to improve memristive performance. In this work, a silk fibroin (SF)-based memristor, integrated with both low power and low operating current simultaneously, has been reported. Doping the SF with Ag and an ethanol-based post-treatment promote microcrystal formation in the bulk of the SF. This induces carrier transport along fixed, short paths and results in a low set voltage, low operating current, and high memristive stability. Such performances can greatly reduce power consumption and heat generation, beneficial for the accuracy and durability of memristor devices. The memristive mechanism of SF-based memristors with different Ag contents is the space-charge-limited conduction (SCLC) mechanism. In addition, the nonlinear transmission property of SF-based memristors suggests useful applications in bioelectronics.

Recent progress in silk fibroin-based flexible electronics

With the rapid development of the Internet of Things (IoT) and the emergence of 5G, traditional silicon-based electronics no longer fully meet market demands such as nonplanar application scenarios due to mechanical mismatch. This provides unprecedented opportunities for flexible electronics that bypass the physical rigidity through the introduction of flexible materials. In recent decades, biological materials with outstanding biocompatibility and biodegradability, which are considered some of the most promising candidates for next-generation flexible electronics, have received increasing attention, e.g., silk fibroin, cellulose, pectin, chitosan, and melanin. Among them, silk fibroin presents greater superiorities in biocompatibility and biodegradability, and moreover, it also possesses a variety of attractive properties, such as adjustable water solubility, remarkable optical transmittance, high mechanical robustness, light weight, and ease of processing, which are partially or even completely lacking in other biological materials. Therefore, silk fibroin has been widely used as fundamental components for the construction of biocompatible flexible electronics, particularly for wearable and implantable devices. Furthermore, in recent years, more attention has been paid to the investigation of the functional characteristics of silk fibroin, such as the dielectric properties, piezoelectric properties, strong ability to lose electrons, and sensitivity to environmental variables. Here, this paper not only reviews the preparation technologies for various forms of silk fibroin and the recent progress in the use of silk fibroin as a fundamental material but also focuses on the recent advanced works in which silk fibroin serves as functional components. Additionally, the challenges and future development of silk fibroin-based flexible electronics are summarized. (1) This review focuses on silk fibroin serving as active functional components to construct flexible electronics. (2) Recent representative reports on flexible electronic devices that applied silk fibroin as fundamental supporting components are summarized. (3) This review summarizes the current typical silk fibroin-based materials and the corresponding advanced preparation technologies. (4) The current challenges and future development of silk fibroin-based flexible electronic devices are analyzed.

Artificial Skin Perception

Skin is the largest organ, with the functionalities of protection, regulation, and sensation. The emulation of human skin via flexible and stretchable electronics gives rise to electronic skin (e-skin), which has realized artificial sensation and other functions that cannot be achieved by conventional electronics. To date, tremendous progress has been made in data acquisition and transmission for e-skin systems, while the implementation of perception within systems, that is, sensory data processing, is still in its infancy. Integrating the perception functionality into a flexible and stretchable sensing system, namely artificial skin perception, is critical to endow current e-skin systems with higher intelligence. Here, recent progress in the design and fabrication of artificial skin perception devices and systems is summarized, and challenges and prospects are discussed. The strategies for implementing artificial skin perception utilize either conventional silicon-based circuits or novel flexible computing devices such as memristive devices and synaptic transistors, which enable artificial skin to surpass human skin, with a distributed, low-latency, and energy-efficient information-processing ability. In future, artificial skin perception would be a new enabling technology to construct next-generation intelligent electronic devices and systems for advanced applications, such as robotic surgery, rehabilitation, and prosthetics.

Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept

Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for higher speed and denser non-volatile memories. In the case of green electronics, pectin has emerged as a suitable alternative to toxic metal oxides for resistive switching applications. Herein, a pectin-based thin film was fabricated on a fluorine-doped tin oxide glass substrate for RS mechanism. The presence of sp3-C groups with low binding energy corresponds to tunable charged defects and the oxygen vacancies confirmed by the O 1s spectra that plays a decisive role in the resistive switching mechanism, as revealed by X-ray photoemission spectroscopy (XPS). The surface morphology of the pectin film shows homogeneous growth and negligible surface roughness (38.98 ± 9.09). The pectin film can dissolve in DI water (10 minutes) owing to its ionization of carboxylic groups, that meet the trends of transient electronics. The developed Ag/pectin/FTO-based memory cell exhibits stable and reproducible bipolar resistive switching behavior along with an excellent ON/OFF ratio (104) and negligible electrical degradation was observed over 30 repeated cycles. Hence, it appears to be a valuable application for green electronics. Indeed, biocompatible storage devices derived from natural pectin are promising for high-density safe applications for information storage systems, flexible electronics, and green electronics.

Protein Binding and Orientation Matter: Bias-Induced Conductance Switching in a Mutated Azurin Junction

We observe reversible, bias-induced switching of conductance via a blue copper protein azurin mutant, N42C Az, with a nearly 10-fold increase at |V| > 0.8 V than at lower bias. No such switching is found for wild-type azurin, WT Az, up to |1.2 V|, beyond which irreversible changes occur. The N42C Az mutant will, when positioned between electrodes in a solid-state Au-protein-Au junction, have an orientation opposite that of WT Az with respect to the electrodes. Current(s) via both proteins are temperature-independent, consistent with quantum mechanical tunneling as dominant transport mechanism. No noticeable difference is resolved between the two proteins in conductance and inelastic electron tunneling spectra at <|0.5 V| bias voltages. Switching behavior persists from 15 K up to room temperature. The conductance peak is consistent with the system switching in and out of resonance with the changing bias. With further input from UV photoemission measurements on Au-protein systems, these striking differences in conductance are rationalized by having the location of the Cu(II) coordination sphere in the N42C Az mutant, proximal to the (larger) substrate-electrode, to which the protein is chemically bound, while for the WT Az that coordination sphere is closest to the other Au electrode, with which only physical contact is made. Our results establish the key roles that a protein's orientation and binding nature to the electrodes play in determining the electron transport tunnel barrier.

Low-cost green recyclable biomaterial for energy-dependent electrical switching and intact biofilm with antibacterial properties

A highly cost-effective recycled biomaterial extracted from lime peel has been made biocompatible and has been coated on a commercial fluorine-doped tin oxide (FTO) substrate of glass using the spin coating method. Structural, morphologic, electronic, and antibacterial measurements were thoroughly characterized as a green biomaterial thin film using X-rays (XRD), PL, FTIR, Raman, SEM, HRTEM, AFM, I–V, and antibacterial diffusion techniques. The comprehensive analysis of structures of recyclable waste in the form of lime peel extract (LPE) as thin films showed the crystalline cellulose structure that corresponds to the lattice fringe (0.342 nm) exposed by HRTEM. The K⁺¹ interstitial active sites or vacancies in LPE/FTO thin films are confirmed by the PL spectra that show important evidence about conduction mechanisms, and hence facilitates Ag⁺¹ ion migration from the top to the bottom electrode. The AFM investigations revealed the minor surface roughness (169.61 nm) of the LPE/FTO film, which controls the current leakage that is associated with surface defects. The designed memory cell (Ag/LPE/FTO) exhibits stable, reproducible electrical switching under low operational voltage and is equipped with excellent retention over 5 × 10³ s. Furthermore, owing to presence of flavonoids and their superior antioxidant nature, lime peel extract powder shows tremendous antimicrobial activity against gram-positive and Gram-negative bacterial strains.

Benzoselenadiazole-Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the random-aggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thin-film and the bottom GZO electrode. The memory device GZO/DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V_set =0.79 V and V_reset =-0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.

The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film

For the potential switching bio-memory device application using DNA composite thin film, we fabricated and characterized the transparent and biocompatible resistive switching random access memory (RRAM) device within the structure stacking of Pt/Cu²⁺ doped salmon DNA/FTO, where Cu²⁺ doping into salmon DNA was solution-processed. The device shows good bipolar switching characteristics with SET and RESET processes at negative and positive sweeps, respectively, with switching memory window greater than 10³ ratios. The device was observed to be in low resistance state as its pristine state and an initial RESET state was necessary to achieve programmable SET and RESET cycles. Based on the electrical characteristics of the Cu²⁺-doped salmon DNA-based RRAM device we propose a switching mechanism with the formation and rupture of conductive filaments due to the migration of Cu²⁺ during the electrical stress. Our understanding could contribute to the engineering of biomaterial memory switching medium for the environmentally benign, biocompatible and biodegradable memory storage devices.

Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L

Resistive switching memory devices are strong candidates for next-generation data storage devices. Biological memristors made from renewable natural biomaterials are very promising due to their biocompatibility, biodegradability, and ecological benignity. In this study, a nonvolatile memristor was fabricated using the body fluid of Bombyx mori as the dielectric layer. The developed Al/Bombyx mori body fluid film/indium tin oxide (ITO) biomemristor exhibited bipolar resistive switching characteristics with a maximum on/off current ratio greater than 10⁴. The device showed a retention time of more than 1 × 10⁴ s without any signs of deterioration, thus proving its good stability and reliability. The resistive switching behavior of the Al/Bombyx mori body fluid film/ITO biological memristor is driven by the formation and breakage of conductive filaments formed by the migration of oxygen ions. This study confirms that Bombyx mori body fluid, a 100% natural, inexpensive, and abundant material, is a potential candidate as a nonvolatile biomemristor material with broad application prospects.

Oxide Neuromorphic Transistors Gated by Polyvinyl Alcohol Solid Electrolytes with Ultralow Power Consumption

Neuromorphic devices and systems with ultralow power consumption are important in building artificial intelligent systems. Here, indium tin oxide (ITO)-based oxide neuromorphic transistors are fabricated using poly(vinyl alcohol) (PVA)-based proton-conducting electrolytes as gate dielectrics. The electrical performances of the transistors can be modulated with the ITO channel thickness. Fundamental synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, and multistore memory, are successfully emulated. Most importantly, the PVA-gated neuromorphic devices demonstrate ultralow energy consumption of ∼1.16 fJ with ultrahigh sensitivity of ∼5.4 dB, as is very important for neuromorphic engineering applications. Because of the inherent environmental-friendly characteristics of PVA, the devices possess security biocompatibility. Thus, the proposed PVA-gated oxide neuromorphic transistors may find potential applications in "green" ultrasensitive neuromorphic systems and efficient electronic biological interfaces.

A Robust Nonvolatile Resistive Memory Device Based on a Freestanding Ultrathin 2D Imine Polymer Film

Here, the synthesis of a wafer-scale ultrathin 2D imine polymer (2DP) film with controllable thickness from simple benzene-1,3,5-tricarbaldehyde (BTA) and p-phenylenediamine (PDA) building blocks is reported using a Schiff base polycondensation reaction at the air-water interface. The synthesized freestanding 2DP films are porous, insulating, and more importantly, covalently linked, which is ideally suited for nonvolatile memristors that use a conductive filament mechanism. These devices exhibit excellent switching performance with high reliability and reproducibility, with on/off ratios in the range of 10² to 10⁵ depending on the thickness of the film. In addition, the endurance and data retention capability of 2DP-based nonvolatile resistive memristors are up to 200 cycles and 8 × 10⁴ s under constant voltage stress at 0.1 V. The intrinsic flexibility of the covalent organic polymer enables the fabrication of a flexible memory device on a polyimide film, which exhibits as reliable memory performance as that on the rigid substrate. Moreover, the 2DP-based memory device shows outstanding thermal stability and organic solvent resistance, which are desirable properties for applications in wearable devices.

pH-Modulated memristive behavior based on an edible garlic-constructed bio-electronic device

A new type of memristive memory device with an edible garlic-constructed Ag/garlic/fluorine-doped SnO₂(FTO) structure for analog neuromorphic sensor applications was designed.

Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics

Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with the transient feature can also be developed as secrecy information storage systems besides the above advantage. Resistive switching (RS) memory is one of the most promising technologies for next-generation memory. Herein, the biocompatible pectin extracted from natural orange peel is introduced to fabricate RS memory devices (Ag/pectin/indium tin oxides (ITO)), which exhibit excellent RS characteristics, such as forming free characteristic, low operating voltages (≈1.1 V), fast switching speed (<70 ns), long retention time (>10⁴ s), and multilevel RS behaviors. The device performance is not degraded after 10⁴ bending cycles, which will be beneficial for flexible memory applications. Additionally, instead of using acid solution, the Ag/pectin/ITO memory device can be dissolved rapidly in deionized water within 10 min thanks to the good solubility arising from ionization of its carboxylic groups, which shows promising application for green electronics. The present biocompatible memory devices based on natural pectin suggest promising material candidates toward enabling high-density secure information storage systems applications, flexible electronics, and green electronics.

A sustainable resistive switching memory device based on organic keratin extracted from hair

It is the consensus of researchers that the reuse of natural resources is an effective way to solve the problems of environmental pollution, waste and overcapacity. Moreover, compared with the case of inorganic materials, the renewability of natural biomaterials has great prominent advantages. In this study, keratin, which was first extracted from hair due to its high content in hair, was chosen as a functional layer for the fabrication of a resistance switching device with the Ag/keratin/ITO structure; in this device, a stable resistive switching memory behavior with good retention characteristic was observed. Via mechanism analysis, it is expected that there is hopping conduction at low biases, and the formation of a conductive filament occurs at high biases. Furthermore, our device exhibited a stable switching behavior with different conductive materials (Ti and FTO) as bottom electrodes, and the influence of Ag and graphite conductive nanoparticles (NPs) doped into the keratin layer on the switching performance of the device was also investigated. This study not only suggests that keratin is a potential biomaterial for the preparation of memory devices, but also provides a promising route for the fabrication of bio-electronic devices with non-toxicity, degradability, sustainability etc.

This study suggests that keratin is a potential biomaterial for the preparation of memory devices with non-toxicity, degradability and sustainability.

Biocompatible Symmetric Na-Ion Microbatteries with Sphere-in-Network Heteronanomat Electrodes Realizing High Reliability and High Energy Density for Implantable Bioelectronics

The prolonged life expectancy accelerates the development of implantable bioelectronic devices. However, conventional batteries with limited lifetime, rigid architecture, and inferior energy density greatly restrict their applications in patient's body. Herein, a novel flexible symmetric Na-ion microbattery based on the heteronanomat electrode and the biocompatible electrolyte has been developed. The film electrodes with sphere-in-network architecture are synthesized by simultaneously electrospinning and electrospraying followed by carbonization. The combined technologies allow a uniform incorporation of active materials/C spheres into the carbon nanofiber matrix, which results in the heteronanomat electrodes with robust structure, fast electron/ion transport, and compact mass loading. The flexible microbatteries are fabricated based on the interdigitated microelectrodes and the biocompatible electrolytes, which provides a new implantable power source for bioelectronics. As a proof-of-concept study, the symmetric sodium-ion microbatteries are constructed from the heteronanomat bifunctional electrodes (based on Na₂VTi(PO₄)₃) and the biocompatible electrolyte. The high reversibility, fast kinetics, and high energy density of the symmetric system in the biocompatible electrolytes reveal their superior performance in bioenvironments. Moreover, the high capacity retention (over 98%) and the high stability of microbattery implanted in a living SD rat for a month further demonstrate its high reliability for long-term in vivo diagnosis. Therefore, this work not only presents a new sphere-in-net heteronanomat structure for fabricating high-performance electrode but also gives significant contributions to develop high-energy-density and high safety biocompatible power sources of implantable bioelectronics.

A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors

Physically transient electronic devices that can disappear on demand have great application prospects in the field of information security, implantable biomedical systems, and environment friendly electronics. On the other hand, the memristor-based artificial synapse is a promising candidate for new generation neuromorphic computing systems in artificial intelligence applications. Therefore, a physically transient synapse based on memristors is highly desirable for security neuromorphic computing and bio-integrated systems. Here, this is the first presentation of fully degradable biomimetic synaptic devices based on a W/MgO/ZnO/Mo memristor on a silk protein substrate, which show remarkable information storage and synaptic characteristics including long-term potentiation (LTP), long-term depression (LTD) and spike timing dependent plasticity (STDP) behaviors. Moreover, to emulate the apoptotic process of biological neurons, the transient synapse devices can be dissolved completely in phosphate-buffered saline solution (PBS) or deionized (DI) water in 7 min. This work opens the route to security neuromorphic computing for smart security and defense electronic systems, as well as for neuro-medicine and implantable electronic systems.

Phototunable Biomemory Based on Light-Mediated Charge Trap

Phototunable biomaterial-based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)-silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy-dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode-based device are related to the space-charge-limited-conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode-based devices. Incorporation of CDs with light-adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs-based resistive random access memory by performing the ultraviolet light illumination studies on as-fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next-generation biocompatible electronics.

A smart safe rechargeable zinc ion battery based on sol-gel transition electrolytes

Thermal runaway has been a long-standing safety issue impeding the development of high-energy-density batteries. Physical safety designs such as employing circuit-breakers and fuses to batteries are limited by small operating voltage windows and no resumption of original working condition when it is cooled down. Here we report a smart thermoresponsive polymer electrolyte that can be incorporated inside batteries to prevent thermal runaway via a fast and reversible sol-gel transition, and successfully combine this smart electrolyte with a rechargeable Zn/α-MnO₂ battery system. At high temperature, battery operation is inhibited as a result of the increased internal resistance caused by the gelation of liquid electrolyte. After cooling down, the electrolyte is spontaneously reversed to sol state and the electrochemical performance of the battery is restored. More importantly, sol-gel transition enables the smart battery to experience different charge-discharge rates under various temperature levels, providing a smart and active strategy to achieve dynamic and reversible self-protection.

Transient security transistors self-supported on biodegradable natural-polymer membranes for brain-inspired neuromorphic applications

Transient electronics, a new generation of electronics that can physically or functionally vanish on demand, are very promising for future "green" security biocompatible electronics. At the same time, hardware implementation of biological synapses is highly desirable for emerging brain-like neuromorphic computational systems that could look beyond the conventional von Neumann architecture. Here, a hardware-security physically-transient bidirectional artificial synapse network based on a dual in-plane-gate Al-Zn-O neuromorphic transistor was fabricated on free-standing laterally-coupled biopolymer electrolyte membranes (sodium alginate). The excitatory postsynaptic current, paired-pulse-facilitation, and temporal filtering characteristics from high-pass to low-pass transition were successfully mimicked. More importantly, bidirectional dynamic spatiotemporal learning rules and neuronal arithmetic were also experimentally demonstrated using two lateral in-plane gates as the presynaptic inputs. Most interestingly, excellent physically-transient behavior could be achieved with a superfast water-soluble speed of only ∼120 seconds. This work represents a significant step towards future hardware-security transient biocompatible intelligent electronic systems.

Programmable Negative Differential Resistance Effects Based on Self-Assembled Au@PPy Core-Shell Nanoparticle Arrays

The negative differential resistance (NDR) effect observed in conducting polymer/Au nanoparticle composite devices is not yet fully clarified due to the random and disordered incorporation of Au nanoparticles into conducting polymers. It remains a formidable challenge to achieve the sequential arrangement of various components in an optimal manner during the fabrication of Au nanoparticle/conducting polymer composite devices. Here, a novel strategy for fabricating Au nanoparticle/conducting polymer composite devices based on self-assembled Au@PPy core-shell nanoparticle arrays is demonstrated. The interval between the two Au nanoparticles can be precisely programmed by modulating the thickness of the shell and the size of the core. Programmable NDR is achieved by regulating the spacer between two Au nanoparticles. In addition, the Au/conducting polymer composite device exhibits a reproducible memory effect with read-write-erase characteristics. The sequentially controllable assembly of Au@PPy core-shell nanoparticle arrays between two microelectrodes will simplify nanodevice fabrication and will provide a profound impact on the development of new approaches for Au/conducting polymer composite devices.

Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high-density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 10⁷ , steep turn-on slope of <8 mV dec^-1 , and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water-assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 10⁷ Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays.

Protein-Based Electronic Skin Akin to Biological Tissues

Human skin provides an interface that transduces external stimuli into electrical signals for communication with the brain. There has been considerable effort to produce soft, flexible, and stretchable electronic skin (E-skin) devices. However, common polymers cannot imitate human skin perfectly due to their poor biocompatibility, biofunctionality, and permeability to many chemicals and biomolecules. Herein, we report on highly flexible, stretchable, conformal, molecule-permeable, and skin-adhering E-skins that combine a metallic nanowire (NW) network and silk protein hydrogel. The silk protein hydrogels offer high stretchability and stability under hydration through the addition of Ca²⁺ ions and glycerol. The NW electrodes exhibit stable operation when subjected to large deformations and hydration. Meanwhile, the hydrogel window provides water and biomolecules to the electrodes (communication between the environment and the electrode). These favorable characteristics allow the E-skin to be capable of sensing strain, electrochemical, and electrophysiological signals.

Plasticizing Silk Protein for On-Skin Stretchable Electrodes

Soft and stretchable electronic devices are important in wearable and implantable applications because of the high skin conformability. Due to the natural biocompatibility and biodegradability, silk protein is one of the ideal platforms for wearable electronic devices. However, the realization of skin-conformable electronic devices based on silk has been limited by the mechanical mismatch with skin, and the difficulty in integrating stretchable electronics. Here, silk protein is used as the substrate for soft and stretchable on-skin electronics. The original high Young's modulus (5-12 GPa) and low stretchability (<20%) are tuned into 0.1-2 MPa and > 400%, respectively. This plasticization is realized by the addition of CaCl₂ and ambient hydration, whose mechanism is further investigated by molecular dynamics simulations. Moreover, highly stretchable (>100%) electrodes are obtained by the thin-film metallization and the formation of wrinkled structures after ambient hydration. Finally, the plasticized silk electrodes, with the high electrical performance and skin conformability, achieve on-skin electrophysiological recording comparable to that by commercial gel electrodes. The proposed skin-conformable electronics based on biomaterials will pave the way for the harmonized integration of electronics into human.

Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores

Memristive synapses based on resistive switching are promising electronic devices that emulate the synaptic plasticity in neural systems. Short-term plasticity (STP), reflecting a temporal strengthening of the synaptic connection, allows artificial synapses to perform critical computational functions, such as fast response and information filtering. To mediate this fundamental property in memristive electronic devices, the regulation of the dynamic resistive change is necessary for an artificial synapse. Here, it is demonstrated that the orientation of mesopores in the dielectric silica layer can be used to modulate the STP of an artificial memristive synapse. The dielectric silica layer with vertical mesopores can facilitate the formation of a conductive pathway, which underlies a lower set voltage (≈1.0 V) compared to these with parallel mesopores (≈1.2 V) and dense amorphous silica (≈2.0 V). Also, the artificial memristive synapses with vertical mesopores exhibit the fastest current increase by successive voltage pulses. Finally, oriented silica mesopores are designed for varying the relaxation time of memory, and thus the successful mediation of STP is achieved. The implementation of mesoporous orientation provides a new perspective for engineering artificial synapses with multilevel learning and forgetting capability, which is essential for neuromorphic computing.

Full imitation of synaptic metaplasticity based on memristor devices

Neuromorphic engineering is a promising technology for developing new computing systems owing to the low-power operation and the massive parallelism similarity to the human brain. Optimal function of neuronal networks requires interplay between rapid forms of Hebbian plasticity and homeostatic mechanisms that adjust the threshold for plasticity, termed metaplasticity. Metaplasticity has important implications in synapses and is barely addressed in neuromorphic devices. An understanding of metaplasticity might yield new insights into how the modification of synapses is regulated and how information is stored by synapses in the brain. Here, we propose a method to imitate the metaplasticity inhibition of long-term potentiation (MILTP) for the first time based on memristors. In addition, the metaplasticity facilitation of long-term potentiation (MFLTP) and the metaplasticity facilitation of long-term depression (MFLTD) are also achieved. Moreover, the mechanisms of metaplasticity in memristors are discussed. Additionally, the proposed method to mimic the metaplasticity is verified by three different memristor devices including oxide-based resistive memory (OxRAM), interface switching random access memory, and conductive bridging random access memory (CBRAM). This is a further step toward developing fully bio-realistic artificial synapses using memristors. The findings in this study will deepen our understanding of metaplasticity, as well as provide new insight into bio-realistic neuromorphic engineering.

Solid-state electrical applications of protein and peptide based nanomaterials

This review summarizes recent advancements in electrical properties and applications of natural proteins and mutated variants, synthetic oligopeptides and peptide–π conjugates.

Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

We review emerging low-cost solution-processed resistive random-access memory (ReRAM) made of either hybrid nanocomposites or hybrid organo-lead halide perovskites.

3D Printed Photoresponsive Devices Based on Shape Memory Composites

Compared with traditional stimuli-responsive devices with simple planar or tubular geometries, 3D printed stimuli-responsive devices not only intimately meet the requirement of complicated shapes at macrolevel but also satisfy various conformation changes triggered by external stimuli at the microscopic scale. However, their development is limited by the lack of 3D printing functional materials. This paper demonstrates the 3D printing of photoresponsive shape memory devices through combining fused deposition modeling printing technology and photoresponsive shape memory composites based on shape memory polymers and carbon black with high photothermal conversion efficiency. External illumination triggers the shape recovery of 3D printed devices from the temporary shape to the original shape. The effect of materials thickness and light density on the shape memory behavior of 3D printed devices is quantified and calculated. Remarkably, sunlight also triggers the shape memory behavior of these 3D printed devices. This facile printing strategy would provide tremendous opportunities for the design and fabrication of biomimetic smart devices and soft robotics.

Nanomechanically Visualizing Drug-Cell Interaction at the Early Stage of Chemotherapy

A detailed understanding of chemotherapy is determined by the response of cell to the formation of the drug-target complex and its corresponding sudden or eventual cell death. However, visualization of this early but important process, encompassing the fast dynamics as well as complex network of molecular pathways, remains challenging. Herein, we report that the nanomechanical traction force is sensitive enough to reflect the early cellular response upon the addition of chemotherapeutical molecules in a real-time and noninvasive manner, due to interactions between chemotherapeutic drug and its cytoskeleton targets. This strategy has outperformed the traditional cell viability, cell cycle, cell impendence as well as intracellular protein analyses, in terms of fast response. Furthermore, by using the nanomechanical traction force as a nanoscale biophysical marker, we discover a cellular nanomechanical change upon drug treatment in a fast and sensitive manner. Overall, this approach could help to reveal the hidden mechanistic steps in chemotherapy and provide useful insights in drug screening.