1
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Shi B, Geng Y, Wang H, Yang J, Shang C, Wang M, Mi S, Huang J, Pan F, Gui X, Wang J, Liu J, Xu D, Zhang H, Qin J, Wang H, Hao L, Tian M, Cheng Z, Zheng G, Cheng P. FePd 2Te 2: An Anisotropic Two-Dimensional Ferromagnet with One-Dimensional Fe Chains. J Am Chem Soc 2024; 146:21546-21554. [PMID: 39048922 DOI: 10.1021/jacs.4c04910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Two-dimensional (2D) magnets have attracted significant attention in recent years due to their importance in the research on both fundamental physics and spintronic applications. Here, we report the discovery of a new ternary compound FePd2Te2. It features a layered quasi-2D crystal structure with 1D Fe zigzag chains extending along the b-axis in the cleavage plane. Single crystals of FePd2Te2 with centimeter size could be grown. Density functional theory calculations, mechanical exfoliation, and atomic force microscopy on these crystals reveal that they are 2D materials that can be thinned down to ∼5 nm. Magnetic characterization shows that FePd2Te2 is an easy-plane ferromagnet with TC ∼ 183 K and strong in-plane uniaxial magnetic anisotropy. Magnetoresistance and the anomalous Hall effect demonstrate that ferromagnetism could be maintained in FePd2Te2 flakes with large coercivity. A crystal twinning effect is observed by scanning tunneling microscopy which makes the Fe chains right angle bent in the cleavage plane and creates an intriguing spin texture. Besides, a large electronic specific heat coefficient of up to γ ∼ 32.4 mJ mol-1 K-2 suggests FePd2Te2 is a strongly correlated metal. Our results show that FePd2Te2 is a correlated anisotropic 2D magnet that may attract multidisciplinary research interests.
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Affiliation(s)
- Bingxian Shi
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Yanyan Geng
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Hengning Wang
- Department of Physics, University of Science and Technology of China, Hefei 230031, Anhui, China
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Jianhui Yang
- Quzhou University, Quzhou, Zhejiang 32400, China
| | - Chenglin Shang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Manyu Wang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Shuo Mi
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Jiale Huang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Feihao Pan
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Xuejuan Gui
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jinchen Wang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Juanjuan Liu
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Daye Xu
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Hongxia Zhang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jianfei Qin
- China Institute of Atomic Energy, PO Box 275-30, Beijing 102413, China
| | - Hongliang Wang
- China Institute of Atomic Energy, PO Box 275-30, Beijing 102413, China
| | - Lijie Hao
- China Institute of Atomic Energy, PO Box 275-30, Beijing 102413, China
| | - Mingliang Tian
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Zhihai Cheng
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Guolin Zheng
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Peng Cheng
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
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2
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Aslam MA, Leitner S, Tyagi S, Provias A, Tkachuk V, Pavlica E, Dienstleder M, Knez D, Watanabe K, Taniguchi T, Yan D, Shi Y, Knobloch T, Waltl M, Schwingenschlögl U, Grasser T, Matković A. All van der Waals Semiconducting PtSe 2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. NANO LETTERS 2024; 24:6529-6537. [PMID: 38789104 PMCID: PMC11157664 DOI: 10.1021/acs.nanolett.4c00956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Revised: 04/30/2024] [Accepted: 05/02/2024] [Indexed: 05/26/2024]
Abstract
Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.
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Affiliation(s)
- M. Awais Aslam
- Chair
of Physics, Department Physics, Mechanical Engineering, and Electrical
Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Simon Leitner
- Chair
of Physics, Department Physics, Mechanical Engineering, and Electrical
Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Shubham Tyagi
- Physical
Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Alexandros Provias
- Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Vadym Tkachuk
- Laboratory
of Organic Matter Physics, University of
Nova Gorica, Vipavska
13, Nova Gorica SI-5000, Slovenia
| | - Egon Pavlica
- Laboratory
of Organic Matter Physics, University of
Nova Gorica, Vipavska
13, Nova Gorica SI-5000, Slovenia
| | | | - Daniel Knez
- Institute
of Electron Microscopy and Nanoanalysis, Graz University of Technology (NAWI Graz), Steyrergasse 17, 8010 Graz, Austria
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dayu Yan
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Youguo Shi
- Beijing
National Laboratory for Condensed Matter Physics and Institute of
Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Theresia Knobloch
- Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Michael Waltl
- Christian
Doppler Laboratory for Single-Defect Spectroscopy at the Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Udo Schwingenschlögl
- Physical
Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Saudi Arabia
| | - Tibor Grasser
- Institute
for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria
| | - Aleksandar Matković
- Chair
of Physics, Department Physics, Mechanical Engineering, and Electrical
Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
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3
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Li H, Yang Z. Highly Responsive and Self-Powered Photodetector Based on PtSe 2/MoS 2 Heterostructure. Molecules 2024; 29:2553. [PMID: 38893429 PMCID: PMC11173480 DOI: 10.3390/molecules29112553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 05/26/2024] [Accepted: 05/27/2024] [Indexed: 06/21/2024] Open
Abstract
In recent years, 2D materials and their heterostructures have started to offer an ideal platform for high-performance photodetection devices. In this work, a highly responsive, self-powered photodetector based on PtSe2/MoS2 van der Waals heterostructure is demonstrated. The device achieves a noteworthy wide band spectral response from visible (405 nm) range to the near infrared region (980 nm). The remarkable photoresponsivity and external quantum efficiency up to 4.52 A/W, and 1880% are achieved, respectively, at 405 nm illumination with fast response time of 20 ms. In addition, the photodetector exhibits a decent photoresponsivity of 33.4 mA/W at zero bias, revealing the photodetector works well in the self-driven mode. Our work suggests that a PtSe2/MoS2 heterostructure could be a potential candidate for the high-performance photodetection applications.
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Affiliation(s)
| | - Zhibin Yang
- Key Laboratory of Optoelectronic Information and Technology, Ministry of Education, and College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
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4
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Fu J, Li C, Wu Q, Hu J, Lu Y, Quan W, Peng Y, Wang X, Yang P, Huan Y, Ji Q, Zhang Y. Large-Substrate-Terrace Confined Growth of Arrayed Ultrathin PtSe 2 Ribbons on Step-Bunched Vicinal Au(001) Facets Toward Electrocatalytic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401770. [PMID: 38764303 DOI: 10.1002/smll.202401770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 04/29/2024] [Indexed: 05/21/2024]
Abstract
Ultrathin PtSe2 ribbons can host spin-polarized edge states and distinct edge electrocatalytic activity, emerging as a promising candidate for versatile applications in various fields. However, the direct synthesis is still challenging and the growth mechanism is still unclear. Herein, the arrayed growth of ultrathin PtSe2 ribbons on bunched vicinal Au(001) facets, via a facile chemical vapor deposition (CVD) route is reported. The ultrathin PtSe2 flakes can transform from traditional irregular shapes to desired ribbon shapes by increasing the height of bunched and unidirectionally oriented Au steps (with step height hstep) is found. This crossover, occurring at hstep ≈ 3.0 nm, defines the tailored growth from step-flow to single-terrace-confined modes, as validated by density functional theory calculations of the different system energies. On the millimeter-scale single-crystal Au(001) films with aligned steps, the arrayed ultrathin PtSe2 ribbons with tunable width of ≈20-1000 nm, which are then served as prototype electrocatalysts for hydrogen evolution reaction (HER) is achieved. This work should represent a huge leap in the direct synthesis and the mechanism exploration of arrayed ultrathin transition-metal dichalcogenides (TMDCs) ribbons, which should stimulate further explorations of the edge-related physical properties and practical applications.
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Affiliation(s)
- Jiatian Fu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Chenyu Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Qilong Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - You Peng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Xiangzhuo Wang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Pengfei Yang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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5
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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6
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Sun K, Xia W, Wang C, Suo P, Zou Y, Peng J, Wang W, Lin X, Jin Z, Guo Y, Ma G. Highly intrinsic carrier mobility in tin diselenide crystal accessed with ultrafast terahertz spectroscopy. OPTICS EXPRESS 2024; 32:17657-17666. [PMID: 38858943 DOI: 10.1364/oe.523383] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2024] [Accepted: 04/17/2024] [Indexed: 06/12/2024]
Abstract
Tin diselenide (SnSe2), a layered transition metal dichalcogenide (TMDC), stands out among other TMDCs for its extraordinary photoactive ability and low thermal conductivity. Consequently, it has stimulated many influential researches on photodetectors, ultrafast pulse shaping, thermoelectric devices, etc. However, the carrier mobility in SnSe2, as determined experimentally, remains limited to tens of cm2V-1s-1. This limitation poses a challenge for achieving high-performance SnSe2-based devices. Theoretical calculations, on the other hand, predict that the carrier mobility in SnSe2 can reach hundreds of cm2V-1s-1, approximately one order of magnitude higher than experimental value. Interestingly, the carrier mobility could be underestimated significantly in long-range transportation measurements due to the presence of defects and boundary scattering effects. To address this discrepancy, we employ optic pump terahertz probe spectroscopy to access the photoinduced dynamical THz photoconductivity of SnSe2. Our findings reveal that the intrinsic carrier mobility in conventional SnSe2 single crystal is remarkably high, reaching 353.2 ± 37.7 cm2V-1s-1, consistent with the theoretical prediction. Additionally, dynamical THz photoconductivity measurements reveal that the SnSe2 crystal containing rich defects efficiently capture photoinduced conduction-band electrons and valence-band holes with time constants of ∼20 and ∼200 ps, respectively. Meanwhile, we observe an impulsively stimulated Raman scattering at 0.60 THz. Our study not only demonstrates ultrafast THz spectroscopy as a reliable method for determining intrinsic carrier mobility and detection of low frequency coherent Raman mode in materials but also provides valuable reference for the future application of high-performance SnSe2-based devices.
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7
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Dong C, Lu LS, Lin YC, Robinson JA. Air-Stable, Large-Area 2D Metals and Semiconductors. ACS NANOSCIENCE AU 2024; 4:115-127. [PMID: 38644964 PMCID: PMC11027125 DOI: 10.1021/acsnanoscienceau.3c00047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/16/2023] [Accepted: 12/18/2023] [Indexed: 04/23/2024]
Abstract
Two-dimensional (2D) materials are popular for fundamental physics study and technological applications in next-generation electronics, spintronics, and optoelectronic devices due to a wide range of intriguing physical and chemical properties. Recently, the family of 2D metals and 2D semiconductors has been expanding rapidly because they offer properties once unknown to us. One of the challenges to fully access their properties is poor stability in ambient conditions. In the first half of this Review, we briefly summarize common methods of preparing 2D metals and highlight some recent approaches for making air-stable 2D metals. Additionally, we introduce the physicochemical properties of some air-stable 2D metals recently explored. The second half discusses the air stability and oxidation mechanisms of 2D transition metal dichalcogenides and some elemental 2D semiconductors. Their air stability can be enhanced by optimizing growth temperature, substrates, and precursors during 2D material growth to improve material quality, which will be discussed. Other methods, including doping, postgrowth annealing, and encapsulation of insulators that can suppress defects and isolate the encapsulated samples from the ambient environment, will be reviewed.
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Affiliation(s)
- Chengye Dong
- 2-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
| | - Li-Syuan Lu
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Joshua A. Robinson
- 2-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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8
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Wang H, Zhang J, Su G, Lu J, Wan Y, Yu X, Yang P. The growth mechanism of PtS2 single crystal. J Chem Phys 2024; 160:134703. [PMID: 38577980 DOI: 10.1063/5.0201654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 03/14/2024] [Indexed: 04/06/2024] Open
Abstract
PtS2, a member of the group 10 transition metal dichalcogenides (TMDs), has received extensive attention because of its excellent electrical properties and air stability. However, there are few reports on the preparation of single-crystal PtS2 in the literature, and the growth mechanism of single crystal PtS2 is not well elucidated. In this work, we proposed a method of preparation that combines magnetron sputtering and chemical vapor transport to obtain monocrystalline PtS2 on a SiO2/Si substrate. By controlling the growth temperature and time, we have synthesized a single crystalline PtS2 of hexagonal shape and size of 1-2 μm on a silicon substrate. Combining the molecular dynamics simulation, the growth mechanism of single crystal PtS2 was investigated both experimentally and theoretically. The synthesis method has a short production cycle and low cost, which opens the door for the fabrication of other TMDs single crystals.
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Affiliation(s)
- Huachao Wang
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jisheng Zhang
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Guowen Su
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Jiangwei Lu
- Kunming Institute of Physics, Kunming 650223, People's Republic of China
| | - Yanfen Wan
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
| | - Xiaohua Yu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, People's Republic of China
| | - Peng Yang
- National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials and Technology, School of Materials and Energy, Yunnan University, Kunming 650091, People's Republic of China
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9
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Yang Z, Yu Q, Wu J, Deng H, Zhang Y, Wang W, Xian T, Huang L, Zhang J, Yuan S, Leng J, Zhan L, Jiang Z, Wang J, Zhang K, Zhou P. Ultrafast laser state active controlling based on anisotropic quasi-1D material. LIGHT, SCIENCE & APPLICATIONS 2024; 13:81. [PMID: 38584173 PMCID: PMC11251271 DOI: 10.1038/s41377-024-01423-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Revised: 03/02/2024] [Accepted: 03/12/2024] [Indexed: 04/09/2024]
Abstract
Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast systems. Seeking an extension of degree of freedom in optical devices based on low-dimensional materials may be a way forward. Herein, the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent absorption. The polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states, i.e., conventional soliton and noise-like pulse. The laser state was switchable in the single fiber laser with a mechanism revealed by numerical simulation. Digital coding was further demonstrated in this platform by employing the laser as a codable light source. This work proposed an approach for ultrafast laser state active controlling with low-dimensional material, which offers a new avenue for constructing tunable on-fiber devices.
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Affiliation(s)
- Zixin Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Yan Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Wenchao Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Tianhao Xian
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Luyi Huang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Junrong Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Shuai Yuan
- Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Jinyong Leng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, China
| | - Li Zhan
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zongfu Jiang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073, China
| | - Junyong Wang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Kai Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China.
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10
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Abdukayumov K, Mičica M, Ibrahim F, Vojáček L, Vergnaud C, Marty A, Veuillen JY, Mallet P, de Moraes IG, Dosenovic D, Gambarelli S, Maurel V, Wright A, Tignon J, Mangeney J, Ouerghi A, Renard V, Mesple F, Li J, Bonell F, Okuno H, Chshiev M, George JM, Jaffrès H, Dhillon S, Jamet M. Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe 2 Probed by THz Spintronic Emission. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304243. [PMID: 38160244 DOI: 10.1002/adma.202304243] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Revised: 11/09/2023] [Indexed: 01/03/2024]
Abstract
2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.
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Affiliation(s)
- Khasan Abdukayumov
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Martin Mičica
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Fatima Ibrahim
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Libor Vojáček
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Céline Vergnaud
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Alain Marty
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Jean-Yves Veuillen
- CNRS, Université Grenoble Alpes, Grenoble INP-UGA, Institut NéeL, Grenoble, 38000, France
| | - Pierre Mallet
- CNRS, Université Grenoble Alpes, Grenoble INP-UGA, Institut NéeL, Grenoble, 38000, France
| | | | | | - Serge Gambarelli
- CEA, CNRS, IRIG-SYMMES, Université Grenoble Alpes, Grenoble, 38000, France
| | - Vincent Maurel
- CEA, CNRS, IRIG-SYMMES, Université Grenoble Alpes, Grenoble, 38000, France
| | - Adrien Wright
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Jérôme Tignon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Juliette Mangeney
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, Palaiseau, 91120, France
| | - Vincent Renard
- CEA, IRIG-Pheliqs, Université Grenoble Alpes, Grenoble, 38000, France
| | - Florie Mesple
- CEA, IRIG-Pheliqs, Université Grenoble Alpes, Grenoble, 38000, France
| | - Jing Li
- CEA, Leti, Université Grenoble Alpes, Grenoble, 38000, France
| | - Frédéric Bonell
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
| | - Hanako Okuno
- CEA, IRIG-MEM, Université Grenoble Alpes, Grenoble, 38000, France
| | - Mairbek Chshiev
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
- Institut Universitaire de France, Paris, 75231, France
| | - Jean-Marie George
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, F-91767, France
| | - Henri Jaffrès
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, F-91767, France
| | - Sukhdeep Dhillon
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, 75005, France
| | - Matthieu Jamet
- CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France
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11
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Ma L, Wang Y, Liu Y. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides. Chem Rev 2024; 124:2583-2616. [PMID: 38427801 DOI: 10.1021/acs.chemrev.3c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.
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Affiliation(s)
- Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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12
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Cho YS, Kang J. Two-dimensional materials as catalysts, interfaces, and electrodes for an efficient hydrogen evolution reaction. NANOSCALE 2024; 16:3936-3950. [PMID: 38347766 DOI: 10.1039/d4nr00147h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Two-dimensional (2D) materials have been significantly investigated as electrocatalysts for the hydrogen evolution reaction (HER) over the past few decades due to their excellent electrocatalytic properties and their structural uniqueness including the atomically thin structure and abundant active sites. Recently, 2D materials with various electronic properties have not only been used as active catalytic materials, but also employed in other components of the HER electrodes including a conductive electrode layer and an interfacial layer to maximize the HER efficiency or utilized as templates for catalytic nanostructure growth. This review provides the recent progress and future perspectives of 2D materials as key components in electrocatalytic systems with an emphasis on the HER applications. We categorized the use of 2D materials into three types: a catalytic layer, an electrode for catalyst support, and an interlayer for enhancing charge transfer between the catalytic layer and the electrode. We first introduce various scalable synthesis methods of electrocatalytic-grade 2D materials, and we discuss the role of 2D materials as HER catalysts, an interface for efficient charge transfer, and an electrode and/or a growth template of nanostructured noble metals.
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Affiliation(s)
- Yun Seong Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
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13
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Debnath S, Meyyappan M, Giri PK. Printed MoSe 2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9039-9050. [PMID: 38324453 DOI: 10.1021/acsami.3c17477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.
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Affiliation(s)
- Subhankar Debnath
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - M Meyyappan
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - P K Giri
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
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14
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Zhou J, Zhang G, Wang W, Chen Q, Zhao W, Liu H, Zhao B, Ni Z, Lu J. Phase-engineered synthesis of atomically thin te single crystals with high on-state currents. Nat Commun 2024; 15:1435. [PMID: 38365915 PMCID: PMC10873424 DOI: 10.1038/s41467-024-45940-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 02/08/2024] [Indexed: 02/18/2024] Open
Abstract
Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm-1 and a mobility as high as ~ 690.7 cm2 V-1 s-1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm-1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.
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Affiliation(s)
- Jun Zhou
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Guitao Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Wenhui Wang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qian Chen
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Weiwei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Hongwei Liu
- Jiangsu Key Lab on Opto-Electronic Technology, School of Physics and Technology, Nanjing Normal University, 1 Wenyuan Road, Nanjing, 210023, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
| | - Zhenhua Ni
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
| | - Junpeng Lu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
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15
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Xu T, Qi L, Xu Y, Xiao S, Yuan Q, Niu R, Wang J, Tsang HK, Liu T, Cheng Z. Giant optical absorption of a PtSe 2-on-silicon waveguide in mid-infrared wavelengths. NANOSCALE 2024; 16:3448-3453. [PMID: 38189416 DOI: 10.1039/d3nr05983a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Low-dimensional platinum diselenide (PtSe2) is a promising candidate for high-performance optoelectronics in the short-wavelength mid-infrared band due to its high carrier mobility, excellent stability, and tunable bandgap. However, light usually interacts moderately with low-dimensional PtSe2, limiting the optoelectronic responses of PtSe2-based devices. Here we demonstrated a giant optical absorption of a PtSe2-on-silicon waveguide by integrating a ten-layer PtSe2 film on an ultra-thin silicon waveguide. The weak mode confinement in the ultra-thin waveguide dramatically increases the waveguide mode overlap with the PtSe2 film. Our experimental results show that the absorption coefficient of the PtSe2-on-silicon waveguide is in the range of 0.0648 dB μm-1 to 0.0704 dB μm-1 in a spectral region of 2200 nm to 2300 nm wavelengths. Furthermore, we also studied the optical absorption in an ultra-thin silicon microring resonator. Our study provides a promising approach to developing PtSe2-on-silicon hybrid optoelectronic integrated circuits.
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Affiliation(s)
- Tianping Xu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Liqiang Qi
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Yingqi Xu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Shuqi Xiao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
| | - Quan Yuan
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Rui Niu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jiaqi Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Hon Ki Tsang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
| | - Tiegen Liu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Zhenzhou Cheng
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
- Georgia Tech Shenzhen Institute, Tianjin University, Shenzhen 518055, China
- School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
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16
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Han SS, Sattar S, Kireev D, Shin JC, Bae TS, Ryu HI, Cao J, Shum AK, Kim JH, Canali CM, Akinwande D, Lee GH, Chung HS, Jung Y. Reversible Transition of Semiconducting PtSe 2 and Metallic PtTe 2 for Scalable All-2D Edge-Contacted FETs. NANO LETTERS 2024; 24:1891-1900. [PMID: 38150559 DOI: 10.1021/acs.nanolett.3c03666] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/29/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of ∼50.30 cm2 V-1 s-1 at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.
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Affiliation(s)
- Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Shahid Sattar
- Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden
| | - Dmitry Kireev
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
- Department of Biomedical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - June-Chul Shin
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Tae-Sung Bae
- Center for Research Equipment, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Hyeon Ih Ryu
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, Republic of Korea
| | | | | | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea
| | - Carlo Maria Canali
- Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hee-Suk Chung
- Electron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
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17
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Li X, Li Z, Han J, Cao S, Zhang Z. Single-layer PtSe 2 adsorbed with non-metallic atoms: geometrical, mechanical, electronic and optical properties and strain effects. Phys Chem Chem Phys 2024; 26:4218-4230. [PMID: 38230672 DOI: 10.1039/d3cp05037h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Recently, single-layer PtSe2, possessing high carrier mobility and optical response, has been successfully fabricated. To further expand its application scope and find new physics, in this work, we functionalized it via the adsorption of non-metallic atoms X (X = H, B, C, N, O, and F) to form hybrid systems X-PtSe2, and their geometrical, mechanical, electronic, and optical properties as well as strain tuning effects were studied deeply. Calculations show that the energy stability of X-PtSe2 systems is significantly enhanced, and they also hold higher thermal and mechanical stability. Particularly, X-PtSe2 systems present excellent in-plane tenacity and out-of plane stiffness against deformations, which make them more applicable for designing nanodevices. Intrinsic PtSe2 is a semiconductor, while the X-PtSe2 system can be a band-gap narrowed semiconductor or metal, thus expanding the application scope for PtSe2, and the odd-even effect of electronic phase variation related to the atomic number is found. Besides, the wavelength range of optical adsorption is increased in X-PtSe2 systems, implying that its optical response region is wide, providing more options for developing optoelectronic devices. Moreover, it is shown that strain can flexibly tune the electronic property of X-PtSe2 systems, especially enhancing the optical absorption ability substantially, beneficial for their applications in solar devices.
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Affiliation(s)
- Xinyan Li
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Zhanhai Li
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Jianing Han
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Shengguo Cao
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Zhenhua Zhang
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
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18
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Liu L, Chen Y, Chen L, Xie B, Li G, Kong L, Tao Q, Li Z, Yang X, Lu Z, Ma L, Lu D, Yang X, Liu Y. Ultrashort vertical-channel MoS 2 transistor using a self-aligned contact. Nat Commun 2024; 15:165. [PMID: 38167517 PMCID: PMC10761794 DOI: 10.1038/s41467-023-44519-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 12/15/2023] [Indexed: 01/05/2024] Open
Abstract
Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS2 heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1 nm gate length and sub-50 nm channel length for vertical MoS2 transistor simultaneously. The self-aligned device exhibits on-off ratio over 105 and on-state current of 250 μA/μm at 4 V bias, which is over 40 times higher compared to control sample without self-alignment process.
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Affiliation(s)
- Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Long Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Biao Xie
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guoli Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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19
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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20
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Mudgal R, Jakhar A, Gupta P, Yadav RS, Biswal B, Sahu P, Bangar H, Kumar A, Chowdhury N, Satpati B, Kumar Nanda BR, Satpathy S, Das S, Muduli PK. Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe 2/Ni 80Fe 20 Heterostructures. NANO LETTERS 2023; 23:11925-11931. [PMID: 38088819 DOI: 10.1021/acs.nanolett.3c04060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.
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Affiliation(s)
- Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Alka Jakhar
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Pankhuri Gupta
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Ram Singh Yadav
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Bubunu Biswal
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pratik Sahu
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics & Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Himanshu Bangar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Akash Kumar
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Physics, University of Gothenburg, Gothenburg 412 96, Sweden
| | - Niru Chowdhury
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Biswarup Satpati
- Surface Physics & Material Science Division, Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute, 1/AF Bidhannagar, Kolkata 700064, India
| | - Birabar Ranjit Kumar Nanda
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - Sashi Satpathy
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Center for Atomistic Modelling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics & Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Samaresh Das
- Center for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
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21
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Lu S, Li J, Shen W, Wang Z, Ma Y, Su X, Lu Y, Li L, Chen Z. Two-Dimensional Atomically Thin Titanium Nitride via Topochemical Conversion. ACS NANO 2023. [PMID: 37991834 DOI: 10.1021/acsnano.3c09930] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Titanium nitride as a typical transition metal nitride (TMN) has attracted increasing interest for its fascinating characteristics and widespread applications. However, the synthesis of two-dimensional (2D) atomically thin titanium nitride is still challenging which hinders its further research in electronic and optoelectronic fields. Here, 2D titanium nitride with a large area was prepared via in situ topochemical conversion of the titanate monolayer. The titanium nitride reveals a thickness-dependent metallic-to-semiconducting transition, where the atomically thin titanium nitride with a thickness of ∼1 nm exhibits an n-type semiconducting behavior and a highly sensitive photoresponse and displays photoswitchable resistance by repeated light irradiation. First-principles calculations confirm that the chemisorbed oxygen on the surface of the titanium nitride nanosheet depletes its electrons, while the light irradiation induced desorption of oxygen leads to increased electron doping and hence the conductance of titanium nitride. These results may allow the scalable synthesis of ultrathin TMNs and facilitate their fundamental physics research and next-generation optoelectronic applications.
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Affiliation(s)
- Shan Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jialin Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Wanping Shen
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou 310027, China
| | - Zichen Wang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yecheng Ma
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xinyu Su
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yunhao Lu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou 310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zongping Chen
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
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22
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Yu R, Xiao F, Lei W, Wang W, Ma Y, Gong X, Ming X. Emerging quasi-one-dimensional material NbS 4 with high carrier mobility and good visible-light adsorption performance for nanoscale applications. Phys Chem Chem Phys 2023; 25:30066-30078. [PMID: 37906277 DOI: 10.1039/d3cp03676f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
Due to their unique structure, abundant properties and potential applications, low-dimensional materials with covalently bonded building blocks through van der Waals (vdW) interactions have sparked widespread interest. Recently, the bulk phase NbS4 consisting of one-dimensional (1D) chains has been synthesized successfully, adding a new member to the group V metallic polychalcogenide family. In the present study, based on density functional theory calculations, we obtained a better understanding of the stability, mechanical properties, electronic structures, transport properties and optical performances of the bulk phase NbS4. Furthermore, the possibility of exfoliating 1D single-chain nanowires from the bulk phase was uncovered. Both bulk phase and 1D nanowires show dynamic, thermal, and mechanical stabilities. The bulk phase possesses an indirect band gap of 1.39 eV with high anisotropic carrier mobilities of 471.814 cm2 s-1 v-1 for electrons (along the b axis direction) and 546.92 cm2 s-1 v-1 for holes (along the a axis direction). The single-chain nanowire exhibits remarkable flexibility and can resist 24% tensile strain along the chain direction. The decreased dimension from the bulk phase to the individual 1D chain not only makes the band gap increase to 1.81 eV but also results in an indirect-to-direct band gap transition, indicating a strong quantum confinement effect. The 1D single-chain nanowire also shows high carrier mobilities of 111.91 cm2 s-1 v-1 for electrons and 316.63 cm2 s-1 v-1 for holes along the chain direction. In addition, both bulk phase and 1D nanowire display excellent visible light absorption performance along the chain direction and the absorption coefficients reach the order of 106 and 105 cm-1. These promising properties render quasi 1D NbS4 as candidate materials for nanoscale applications in high-performance optoelectronic and nanoelectronic devices. The predicted unconventional properties of NbS4 not only provide a meaningful complement to the fascinating quasi 1D material family, but also will attract extensive interest from a wide audience to explore unanticipated properties and design new nanoscale devices based on NbS4.
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Affiliation(s)
- Ru Yu
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Feng Xiao
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Wen Lei
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Yiping Ma
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xujia Gong
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xing Ming
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- MOE Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Key Laboratory of Low-dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
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23
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Wang S, Bai Y, Liu M, Zong X, Wang W, Mu Q, Han T, Li F, Wang S, Shan L, Long M. A high-performance long-wave infrared photodetector based on a WSe 2/PdSe 2 broken-gap heterodiode. NANOSCALE 2023; 15:17006-17013. [PMID: 37831435 DOI: 10.1039/d3nr03248e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.
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Affiliation(s)
- Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Yajie Bai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Mingli Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Xiaolan Zong
- Institute for Quantum Control and Quantum Information, School of Physics and Materials Engineering, Hefei Normal University, Hefei 230601, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Qingge Mu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Shaoliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
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24
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Ji J, Zhou Y, Zhou B, Desgué E, Legagneux P, Jepsen PU, Bøggild P. Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe 2 Films by Terahertz Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37883033 DOI: 10.1021/acsami.3c09792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.
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Affiliation(s)
- Jie Ji
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Yingqiu Zhou
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Binbin Zhou
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Eva Desgué
- Thales Research and Technology, Palaiseau 91767, France
| | | | - Peter Uhd Jepsen
- Department of Electrical and Photonics Engineering, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
| | - Peter Bøggild
- Department of Physics, Technical University of Denmark, Kgs. Lyngby 2800, Denmark
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25
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Wang Y, Liu C, Duan H, Li Z, Wang C, Tan H, Feng S, Liu R, Li P, Yan W. Controlled synthesis of van der Waals CoS 2for improved p-type transistor contact. NANOTECHNOLOGY 2023; 35:025601. [PMID: 37797610 DOI: 10.1088/1361-6528/ad0059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 10/05/2023] [Indexed: 10/07/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) p-type semiconductors have shown attractive application prospects as atomically thin channels in electronic devices. However, the high Schottky hole barrier of p-type semiconductor-metal contacts induced by Fermi-level pinning is hardly removed. Herein, we prepare a vdW 1T-CoS2nanosheet as the contact electrode of a WSe2field-effect transistor (FET), which shows a considerably high on/off ratio > 107and a hole mobility of ∼114.5 cm2V-1s-1. The CoS2nanosheets exhibit metallic conductivity with thickness dependence, which surpasses most 2D transition metal dichalcogenide metals or semimetals. The excellent FET performance of the CoS2-contacted WSe2FET device can be attributed to the high work function of CoS2, which lowers the Schottky hole barrier. Our work provides an effective method for growing vdW CoS2and opens up more possibilities for the application of 2D p-type semiconductors in electronic devices.
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Affiliation(s)
- Yao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Chaocheng Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Hengli Duan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Zhi Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Chao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Hao Tan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Sihua Feng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Ruiqi Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
| | - Pai Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, People's Republic of China
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26
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Zhang Q, Zhu H, Yang X, Chen L, Shen Y. A multi-factor adjustable PtSe 2/GaN van der Waals heterostructure with enhanced photocatalytic performance. Phys Chem Chem Phys 2023; 25:22477-22486. [PMID: 37581355 DOI: 10.1039/d3cp02167j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Two-dimensional van der Waals heterostructures with multiple tunable approaches in electronic and optical properties are highly superior for photocatalysis and novel devices. By applying first-principles calculations, we systematically studied the electronic structure, optical absorption, carrier mobility and solar-to-hydrogen efficiency of PtSe2/GaN heterostructures, which are affected by different thicknesses, varying directions of polarization of the GaN nanosheets and applied mechanical strain of the whole system. The results indicate that these heterostructures exhibit thermodynamic stability at room-temperature (300 K), and most configurations have type-II band alignment, among which the heterostructure consisting of GaN trilayers and PtSe2 shows high visible-light absorption (1.71 × 105 cm-1) and ultra-wide range of pH values (pH = 0-14) for the photocatalytic water splitting reaction and exceedingly high overpotential for the hydrogen evolution reaction (3.375 eV). Simultaneously, being two of the most significant parameters of photocatalysis and devices, the carrier mobility and solar-to-hydrogen efficiency have also been calculated, respectively, reaching up to 1601 cm2 V-1 s-1 and 17.2%. Moreover, the photoelectrical properties can be highly tuned through further biaxial strain engineering; especially, the visible-light absorption can be enhanced to 2.85 × 105 cm-1 by applying 6% compression strain. Thus, the PtSe2/GaN heterostructure we proposed shows a broad prospect for photocatalytic water splitting.
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Affiliation(s)
- Qihao Zhang
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China.
| | - Hua Zhu
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China.
| | - Xiaodong Yang
- Key Laboratory of Ecophysics and Department of Physics, Shihezi University, Xinjiang 832003, China
| | - Liang Chen
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China.
| | - Yang Shen
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China.
- School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
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27
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Kar S, Kumari P, Kamalakar MV, Ray SJ. Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures. Sci Rep 2023; 13:13696. [PMID: 37608024 PMCID: PMC10444812 DOI: 10.1038/s41598-023-39993-8] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 08/03/2023] [Indexed: 08/24/2023] Open
Abstract
Atomically thin two-dimensional (2D) Janus materials and their Van der Waals heterostructures (vdWHs) have emerged as a new class of intriguing semiconductor materials due to their versatile application in electronic and optoelectronic devices. Herein, We have invstigated most probable arrangements of different inhomogeneous heterostructures employing one layer of transition metal dichalcogenide, TMD (MoS2, WS2, MoSe2, and WSe2) piled on the top of Janus TMD (MoSeTe or WSeTe) and investigated their structural, electronic as well as optical properties through first-principles based calculations. After that, we applied twist engineering between the monolayers from 0[Formula: see text] 60[Formula: see text] twist angle, which delivers lattice reconstruction and improves the performance of the vdWHs due to interlayer coupling. The result reveals that all the proposed vdWHs are dynamically and thermodynamically stable. Some vdWHs such as MoS2/MoSeTe, WS2/WSeTe, MoS2/WSeTe, MoSe2/MoSeTe, and WS2/MoSeTe exhibit direct bandgap with type-II band alignment at some specific twist angle, which shows potential for future photovoltaic devices. Moreover, the electronic property and carrier mobility can be effectively tuned in the vdWHs compared to the respective monolayers. Furthermore, the visible optical absorption of all the Janus vdWHs at [Formula: see text] = 0[Formula: see text] can be significantly enhanced due to the weak inter-layer coupling and redistribution of the charges. Therefore, the interlayer twisting not only provides an opportunity to observe new exciting properties but also gives a novel route to modulate the electronic and optoelectronic properties of the heterostructure for practical applications.
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Affiliation(s)
- S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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28
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Qi L, Che M, Liu M, Wang B, Zhang N, Zou Y, Sun X, Shi Z, Li D, Li S. Mechanistic understanding of the interfacial properties of metal-PtSe 2 contacts. NANOSCALE 2023; 15:13252-13261. [PMID: 37548442 DOI: 10.1039/d3nr02466k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/08/2023]
Abstract
With the advantages of a moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductors show promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to a strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and a significant interfacial dipole, resulting in a vertical Schottky barrier for Ag, Au, Pd and Pt-based systems and a lateral Schottky barrier for Al, Cu, Sc and Ti-based systems, with a strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 is significantly high and the tunneling-specific resistivity is two orders of magnitude lower than that of the state-of-the-art contacts, demonstrating the high efficiency for electron injection from metals to PtSe2. Moreover, the introduction of h-BN as a buffer layer leads to a weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contacts. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics.
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Affiliation(s)
- Liujian Qi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Mengqi Che
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Mingxiu Liu
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Bin Wang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Nan Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Yuting Zou
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
| | - Shaojuan Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, Jilin 130033, P. R. China.
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Qian L, Peng Q, Jiang N, Qiao C, Yue W. Peroxidase-mimicking poly-L-lysine/alginate microspheres with PtS 2 nanoparticles for image-based colorimetric assays. Mikrochim Acta 2023; 190:300. [PMID: 37462758 DOI: 10.1007/s00604-023-05876-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Accepted: 06/15/2023] [Indexed: 07/21/2023]
Abstract
Morphologically controllable ALG@ε-PL water-in-water microspheres were successfully prepared using a two-step method through precise control of the two-phase flow rate. Through further interfacial coagulation, the ALG@ε-PL microspheres possess a dense surface structure and good permeability. The sensor based on PtS2@ALG@ε-PL microspheres was constructed by encapsulating PtS2 nanosheets with peroxidase-like properties in ALG@ε-PL water-in-water microspheres. PtS2 nanosheets catalyze the oxidation of 3,3',5,5'-tetramethylbenzidine (TMB) by H2O2 to produce blue oxTMB. The strong reducing property of the model analyte dopamine (DA) can reduce oxTMB, thus causing the blue color to fade and successfully achieving colorimetric detection of DA. The linear range of the assay is 2.0-200 μM, and the detection limit is 0.22 μM. The recoveries of DA in serum samples were determined by the spik method, and the results were reproducible.
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Affiliation(s)
- Ling Qian
- Department of Chemistry, Key Laboratory of Biomedical Functional Materials, School of Science, China Pharmaceutical University, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
- Key Laboratory of Drug Quality Control and Pharmacovigilance (China Pharmaceutical University), Ministry of Education, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
| | - Qiang Peng
- Department of Chemistry, Key Laboratory of Biomedical Functional Materials, School of Science, China Pharmaceutical University, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
- Key Laboratory of Drug Quality Control and Pharmacovigilance (China Pharmaceutical University), Ministry of Education, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
| | - Nian Jiang
- Department of Chemistry, Key Laboratory of Biomedical Functional Materials, School of Science, China Pharmaceutical University, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
- Key Laboratory of Drug Quality Control and Pharmacovigilance (China Pharmaceutical University), Ministry of Education, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
| | - CaiRong Qiao
- Department of Chemistry, Key Laboratory of Biomedical Functional Materials, School of Science, China Pharmaceutical University, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
- Key Laboratory of Drug Quality Control and Pharmacovigilance (China Pharmaceutical University), Ministry of Education, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China
| | - Wanqing Yue
- Department of Chemistry, Key Laboratory of Biomedical Functional Materials, School of Science, China Pharmaceutical University, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China.
- Key Laboratory of Drug Quality Control and Pharmacovigilance (China Pharmaceutical University), Ministry of Education, 638 Longmian Avenue, Chunhua Street, Jiangning District, Nanjing, 211198, People's Republic of China.
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30
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Zhou Y, Tong L, Chen Z, Tao L, Pang Y, Xu JB. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun 2023; 14:4270. [PMID: 37460531 DOI: 10.1038/s41467-023-39705-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/26/2023] [Indexed: 07/20/2023] Open
Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Zefeng Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, China
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China.
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Wang Z, Jing X, Duan S, Liu C, Kang D, Xu X, Chen J, Xia Y, Chang B, Zhao C, Zhu B, Xu T, Lin H, Lu W, Ren Y, Sun L, Wu J, Tao L. 2D PtSe 2 Enabled Wireless Wearable Gas Monitoring Circuits with Distinctive Strain-Enhanced Performance. ACS NANO 2023. [PMID: 37294879 DOI: 10.1021/acsnano.3c01582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The application of 2D materials-based flexible electronics in wearable scenarios is limited due to performance degradation under strain fields. In contrast to its negative role in existing transistors or sensors, herein, we discover a positive effect of strain to the ammonia detection in 2D PtSe2. Linear modulation of sensitivity is achieved in flexible 2D PtSe2 sensors via a customized probe station with an in situ strain loading apparatus. For trace ammonia absorption, a 300% enhancement in room-temperature sensitivity (31.67% ppm-1) and an ultralow limit of detection (50 ppb) are observed under 1/4 mm-1 curvature strain. We identify three types of strain-sensitive adsorption sites in layered PtSe2 and pinpoint that basal-plane lattice distortion contributes to better sensing performance resulting from reduced absorption energy and larger charge transfer density. Furthermore, we demonstrate state-of-the-art 2D PtSe2-based wireless wearable integrated circuits, which allow real-time gas sensing data acquisition, processing, and transmission through a Bluetooth module to user terminals. The circuits exhibit a wide detection range with a maximum sensitivity value of 0.026 V·ppm-1 and a low energy consumption below 2 mW.
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Affiliation(s)
- Zhehan Wang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Xu Jing
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Shengshun Duan
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Chang Liu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Dingxuan Kang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Xiao Xu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Jiayi Chen
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Yier Xia
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Bo Chang
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Chengdong Zhao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Beibei Zhu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
| | - Huiwen Lin
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Weibing Lu
- Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
| | - Yuan Ren
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
| | - Jun Wu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Li Tao
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
- Center of 2D Materials, Southeast University, Nanjing 211189, China
- Center for Flexible RF Technology, Southeast University, Nanjing 211189, China
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32
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Meng X, Du Y, Wu W, Joseph NB, Deng X, Wang J, Ma J, Shi Z, Liu B, Ma Y, Yue F, Zhong N, Xiang PH, Zhang C, Duan CG, Narayan A, Sun Z, Chu J, Yuan X. Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta 2 NiS 5 Photodetector. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300413. [PMID: 37116118 PMCID: PMC10369293 DOI: 10.1002/advs.202300413] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta2 NiS5 . While the fabricated photodetector exhibits good sensitivity (3.1 mS W-1 per □) and fast photoresponse (31 µs), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm-2 , the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two-recombination-center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.
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Affiliation(s)
- Xianghao Meng
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yuhan Du
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Wenbin Wu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Nesta Benno Joseph
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Jinjin Wang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Jianwen Ma
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Zeping Shi
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Binglin Liu
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Yuanji Ma
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Fangyu Yue
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Ni Zhong
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Ping-Hua Xiang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China
| | - Chun-Gang Duan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India
| | - Zhenrong Sun
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200438, China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China
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33
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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Yang X, Zhou X, Li L, Wang N, Hao R, Zhou Y, Xu H, Li Y, Zhu G, Zhang Z, Wang J, Feng Q. Large-Area Black Phosphorus/PtSe 2 Schottky Junction for High Operating Temperature Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206590. [PMID: 36974583 DOI: 10.1002/smll.202206590] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Revised: 03/08/2023] [Indexed: 06/18/2023]
Abstract
High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared-guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large-area black phosphorus (BP)/PtSe2 films device arrays via a depletion-enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe2 interface and resulting in full depleted working channels, the BP/PtSe2 photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state-of-the-art operating temperature at 470 K with the photo-responsivity (R) and specific detectivity (D*) of 25 A W-1 and 6.4 × 1011 Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe2 photodetector arrays show high-uniformity photo-response in a large area. This work provides new strategies for high-performance broadband photodetector arrays with HOT by Schottky junction of large-area BP/PtSe2 films.
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Affiliation(s)
- Xue Yang
- College of Chemistry & Pharmacy, Northwest A&F University, 22 Xinong Road, Yangling, Shaanxi, 712100, China
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Xi Zhou
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Ning Wang
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Rui Hao
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Yanan Zhou
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Yingtao Li
- School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Guangming Zhu
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Zemin Zhang
- School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Junru Wang
- College of Chemistry & Pharmacy, Northwest A&F University, 22 Xinong Road, Yangling, Shaanxi, 712100, China
| | - Qingliang Feng
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
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35
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Hao R, Liu L, Yuan J, Wu L, Lei S. Recent Advances in Field Effect Transistor Biosensors: Designing Strategies and Applications for Sensitive Assay. BIOSENSORS 2023; 13:bios13040426. [PMID: 37185501 PMCID: PMC10136430 DOI: 10.3390/bios13040426] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Revised: 03/19/2023] [Accepted: 03/23/2023] [Indexed: 05/17/2023]
Abstract
In comparison with traditional clinical diagnosis methods, field-effect transistor (FET)-based biosensors have the advantages of fast response, easy miniaturization and integration for high-throughput screening, which demonstrates their great technical potential in the biomarker detection platform. This mini review mainly summarizes recent advances in FET biosensors. Firstly, the review gives an overview of the design strategies of biosensors for sensitive assay, including the structures of devices, functionalization methods and semiconductor materials used. Having established this background, the review then focuses on the following aspects: immunoassay based on a single biosensor for disease diagnosis; the efficient integration of FET biosensors into a large-area array, where multiplexing provides valuable insights for high-throughput testing options; and the integration of FET biosensors into microfluidics, which contributes to the rapid development of lab-on-chip (LOC) sensing platforms and the integration of biosensors with other types of sensors for multifunctional applications. Finally, we summarize the long-term prospects for the commercialization of FET sensing systems.
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Affiliation(s)
- Ruisha Hao
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Lei Liu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Jiangyan Yuan
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Lingli Wu
- Medical College, Northwest Minzu University, Lanzhou 730000, China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
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36
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Zhang J, Shang C, Dai X, Zhang Y, Zhu T, Zhou N, Xu H, Yang R, Li X. Effective Passivation of Anisotropic 2D GeAs via Graphene Encapsulation for Highly Stable Near-Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13281-13289. [PMID: 36857585 DOI: 10.1021/acsami.2c20030] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Germanium arsenic (GeAs) as a promising two-dimensional (2D) semiconducting material has attracted extensive attention. The high carrier mobility and tunable bandgap of GeAs offer broad prospects in electronic and optoelectronic device-related applications. The unique intrinsic anisotropy arising from the low-symmetry structure can be applied in the design of new devices. However, the rapid degradation of mechanically exfoliated GeAs in the environment poses a challenge to its practical development in scalable devices. Here, an approach to stabilize the sensitive material without isolation from the ambient environment is reported. The graphene capping layer effectively suppresses environmental degradation, enabling the encapsulated GeAs photodetectors to maintain the key electronic properties for more than 3 months under ambient conditions. In addition, the regulation of the work function of graphene significantly improves the device performance. An improved responsivity of 965.07 A/W is 20 times higher than that of pure GeAs. This work provides opportunities for the practical application of GeAs and other environmentally sensitive 2D materials.
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Affiliation(s)
- Jianbin Zhang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
| | - Conghui Shang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Xinyue Dai
- School of Life Sciences, Shanghai University, Shanghai 200444, P. R. China
| | - Yao Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Tao Zhu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Rusen Yang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou 710068, P. R. China
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Elbanna A, Jiang H, Fu Q, Zhu JF, Liu Y, Zhao M, Liu D, Lai S, Chua XW, Pan J, Shen ZX, Wu L, Liu Z, Qiu CW, Teng J. 2D Material Infrared Photonics and Plasmonics. ACS NANO 2023; 17:4134-4179. [PMID: 36821785 DOI: 10.1021/acsnano.2c10705] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.
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Affiliation(s)
- Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Hao Jiang
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Juan-Feng Zhu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Dongjue Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Samuel Lai
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xian Wei Chua
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
- Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore
| | - Lin Wu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
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Bai S, Zhang J, Wu M, Luo D, Wan D, Li X, Tang S. Theoretical Prediction of Thermoelectric Performance for Layered LaAgOX (X = S, Se) Materials in Consideration of the Four-Phonon and Multiple Carrier Scattering Processes. SMALL METHODS 2023; 7:e2201368. [PMID: 36642805 DOI: 10.1002/smtd.202201368] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Revised: 12/22/2022] [Indexed: 06/17/2023]
Abstract
Inspired by the experimental achievement of layered LaCuOX (X = S, Se) with superior thermoelectric (TE) performance, the TE properties of Ag-based isomorphic LaAgOX are systemically investigated by the first-principles calculation. The LaAgOS and LaAgOSe are direct semiconductors with wide bandgaps of ≈2.50 and ≈2.35 eV. Essential four-phonon and multiple carrier scattering mechanisms are considered in phonon and electronic transport calculations to improve the accuracy of the figure-of-merit (ZT). The p-type LaAgOX (X = S, Se) shows excellent TE performance on account of the large Seebeck coefficient originated from the band convergency and low thermal conductivity caused by the strong phonon-phonon scattering. Consequently, the optimal ZTs along the out-of-plane direction decrease in the order of n-type LaAgOSe (≈2.88) > p-type LaAgOSe (≈2.50) > p-type LaAgOS (≈2.42) > n-type LaAgOS (≈2.27) at 700 K, and the optimal ZTs of ≈1.16 and ≈1.29 are achieved for p-type LaAgOS and LaAgOSe at the same temperature. The present work would provide a deep insight into the phonon and electronic transport properties of LaAgOX (X = S, Se), but also could shed light on the way for the rational design of state-of-the-art heteroanionic materials for TE application.
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Affiliation(s)
- Shulin Bai
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
| | - Jingyi Zhang
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
| | - Mengxiu Wu
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
| | - Dongming Luo
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
| | - Da Wan
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
| | - Xiaodong Li
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
| | - Shuwei Tang
- College of Materials Science and Engineering, Liaoning Technical University, Fuxin, Liaoning, 123000, China
- Faculty of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, China
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Su H, Zheng Z, Yu Z, Feng S, Lan H, Wang S, Zhang M, Li L, Liang H. Optically Controlling Broadband Terahertz Modulator Based on Layer-Dependent PtSe 2 Nanofilms. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:795. [PMID: 36903672 PMCID: PMC10005757 DOI: 10.3390/nano13050795] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2023] [Revised: 02/15/2023] [Accepted: 02/20/2023] [Indexed: 06/18/2023]
Abstract
In this paper, we propose an optically controlling broadband terahertz modulator of a layer-dependent PtSe2 nanofilm based on a high-resistance silicon substrate. Through optical pump and terahertz probe system, the results show that compared with 6-, 10-, and 20-layer films, a 3-layer PtSe2 nanofilm has better surface photoconductivity in the terahertz band and has a higher plasma frequency ωp of 0.23 THz and a lower scattering time τs of 70 fs by Drude-Smith fitting. By the terahertz time-domain spectroscopy system, the broadband amplitude modulation of a 3-layer PtSe2 film in the range of 0.1-1.6 THz was obtained, and the modulation depth reached 50.9% at a pump density of 2.5 W/cm2. This work proves that PtSe2 nanofilm devices are suitable for terahertz modulators.
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Affiliation(s)
- Hong Su
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zesong Zheng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zhisheng Yu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Shiping Feng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Huiting Lan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Shixing Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Min Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ling Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Huawei Liang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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Ge X, Zhou X, Sun D, Chen X. First-Principles Study of Structural and Electronic Properties of Monolayer PtX 2 and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering. ACS OMEGA 2023; 8:5715-5721. [PMID: 36816647 PMCID: PMC9933214 DOI: 10.1021/acsomega.2c07271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2022] [Accepted: 01/25/2023] [Indexed: 06/18/2023]
Abstract
In this work, the structural parameters and electronic properties of PtX2 and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. All PtX2 and Janus PtXY monolayers show an outstanding stretchability with Young's modulus ranging from 61.023 to 82.124 N/m, about one-fifth that of graphene and half that of MoS2, suggesting highly flexible materials. Our first-principles calculations reveal that the pristine PtX2 and their Janus counterparts are indirect semiconductors with their band gap ranging from 0.760 to 1.810 eV at the Perdew-Burke-Ernzerhof level (1.128-2.580 eV at the Heyd-Scuseria-Ernzerhof level). By applying biaxial compressive and tensile strain, the electronic properties of all PtX2 and Janus PtXY monolayers are widely tunable. Under small compressive strain, PtX2 and Janus PtXY structures remain indirect semiconductors. PtTe2, PtSeTe, and PtSTe monolayers undergo a semiconducting to metallic transition when the strain reaches -6, -8, and -10%, respectively. Interestingly, there is a transition from the indirect semiconductor to a quasi-direct one for all PtX2 and Janus PtXY monolayers when the tensile strain is applied.
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Affiliation(s)
- Xun Ge
- Engineering
Research Center for Nanophotonics & Advanced Instrument (MOE),
School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
- State
Key Laboratory of Infrared Physics, Shanghai Institute of Technical
Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Xiaohao Zhou
- State
Key Laboratory of Infrared Physics, Shanghai Institute of Technical
Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Deyan Sun
- Engineering
Research Center for Nanophotonics & Advanced Instrument (MOE),
School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Xiaoshuang Chen
- State
Key Laboratory of Infrared Physics, Shanghai Institute of Technical
Physics, Chinese Academy of Sciences, Shanghai200083, China
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41
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Huang X, Wang J, Zhao C, Gan LY, Xu H. The surface charge induced high activity of oxygen reduction reaction on the PdTe 2 bilayer. Phys Chem Chem Phys 2023; 25:4105-4112. [PMID: 36651805 DOI: 10.1039/d2cp05772g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Developing transition metal dichalcogenides as electrocatalysts has attracted great interest due to their tunable electronic properties and good thermal stabilities. Herein, we propose a PdTe2 bilayer as a promising electrocatalyst candidate towards the oxygen reduction reaction (ORR), based on extensive investigation of the electronic properties of PdTe2 thin films as well as atomic-level reaction kinetics at explicit electrode potentials. We verify that under electrochemical reducing conditions, the electron emerging on the electrode surface is directly transferred to O2 adsorbed on the PdTe2 bilayer, which greatly reduces the dissociation barrier of O2, and thereby facilitates the ORR to proceed via a dissociative pathway. Moreover, the barriers of the electrochemical steps in this pathway are all found to be less than 0.1 eV at the ORR limiting potential, demonstrating fast ORR kinetics at ambient conditions. This unique mechanism offers excellent energy efficiency and four-electron selectivity for the PdTe2 bilayer, and it is identified as a promising candidate for fuel cell applications.
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Affiliation(s)
- Xiang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Jiong Wang
- Innovation Center for Chemical Sciences, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
| | - Changming Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Li-Yong Gan
- Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400030, China
| | - Hu Xu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China. .,Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen 518055, China.,Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
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42
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Chen X, Wang X, Pang Y, Bao G, Jiang J, Yang P, Chen Y, Rao T, Liao W. Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors. SMALL METHODS 2023; 7:e2201156. [PMID: 36610015 DOI: 10.1002/smtd.202201156] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.
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Affiliation(s)
- Xiaopei Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiongfeng Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yudong Pang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Guocheng Bao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Jie Jiang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Peng Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China
| | - Yuankang Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Tingke Rao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Wugang Liao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
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43
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Lu H, Liu W, Wang H, Liu X, Zhang Y, Yang D, Pi X. Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide. NANOTECHNOLOGY 2023; 34:132001. [PMID: 36563353 DOI: 10.1088/1361-6528/acae28] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.
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Affiliation(s)
- Hui Lu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Wenji Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Xiao Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
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Zhuo F, Wu J, Li B, Li M, Tan CL, Luo Z, Sun H, Xu Y, Yu Z. Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors. RESEARCH (WASHINGTON, D.C.) 2023; 6:0057. [PMID: 36939429 PMCID: PMC10016345 DOI: 10.34133/research.0057] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 01/02/2023] [Indexed: 01/13/2023]
Abstract
Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance-power-area-cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility (μ), equivalent oxide thickness (EOT), and contact resistance (RC ), which enables high ON current (Ion ) with reduced driving voltage (Vdd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.
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Affiliation(s)
- Fulin Zhuo
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jie Wu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Binhong Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Institute of Microelectronics,
Chinese Academy of Sciences, Beijing 100029, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Moyang Li
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology),
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Yong Xu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
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45
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Zhou Y, Wang Y, Zhuge F, Guo J, Ma S, Wang J, Tang Z, Li Y, Miao X, He Y, Chai Y. A Reconfigurable Two-WSe 2 -Transistor Synaptic Cell for Reinforcement Learning. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107754. [PMID: 35104378 DOI: 10.1002/adma.202107754] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Revised: 01/19/2022] [Indexed: 06/14/2023]
Abstract
Reward-modulated spike-timing-dependent plasticity (R-STDP) is a brain-inspired reinforcement learning (RL) rule, exhibiting potential for decision-making tasks and artificial general intelligence. However, the hardware implementation of the reward-modulation process in R-STDP usually requires complicated Si complementary metal-oxide-semiconductor (CMOS) circuit design that causes high power consumption and large footprint. Here, a design with two synaptic transistors (2T) connected in a parallel structure is experimentally demonstrated. The 2T unit based on WSe2 ferroelectric transistors exhibits reconfigurable polarity behavior, where one channel can be tuned as n-type and the other as p-type due to nonvolatile ferroelectric polarization. In this way, opposite synaptic weight update behaviors with multilevel (>6 bit) conductance states, ultralow nonlinearity (0.56/-1.23), and large Gmax /Gmin ratio of 30 are realized. By applying positive/negative reward to (anti-)STDP component of 2T cell, R-STDP learning rules are realized for training the spiking neural network and demonstrated to solve the classical cart-pole problem, exhibiting a way for realizing low-power (32 pJ per forward process) and highly area-efficient (100 µm2 ) hardware chip for reinforcement learning.
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Affiliation(s)
- Yue Zhou
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Yasai Wang
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Fuwei Zhuge
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Jianmiao Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Jingli Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Zijian Tang
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Yi Li
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Xiangshui Miao
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Yuhui He
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
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46
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Huang H, Peng J, Li Z, Dong H, Huang L, Wen M, Wu F. Defect-Induced Ultrafast Nonadiabatic Electron-Hole Recombination Process in PtSe 2 Monolayer. J Phys Chem Lett 2022; 13:10988-10993. [PMID: 36404591 DOI: 10.1021/acs.jpclett.2c03306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Defects are inevitable in two-dimensional materials due to the growth condition, which results in many unexpected changes in materials' properties. Here, we have mainly discussed the nonradiative recombination dynamics of PtSe2 monolayer without/with native point defects. Based on first-principles calculations, a shallow p-type defect state is introduced by a Se antisite, and three n-type defect states with a double-degenerate shallow defect state and a deep defect state are introduced by a Se vacancy. Significantly, these defect states couple strongly to the pristine valence band maximum and lead to the enhancement of the in-plane vibrational Eg mode. Both factors appreciably increase the nonadiabatic coupling, accelerating the electron-hole recombination process. An explanation of PtSe2-based photodetectors with the slow response, compared to conventional devices, is provided by studying this nonradiative transitions process.
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Affiliation(s)
- Hongfu Huang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou510006, China
| | - Junhao Peng
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou510006, China
| | - Zixuan Li
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou510006, China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou510006, China
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou510006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou510006, China
| | - Minru Wen
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou510006, China
| | - Fugen Wu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou510006, China
- School of Materials and Energy, Guangdong University of Technology, Guangzhou510006, China
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Tan Y, Hao H, Chen Y, Kang Y, Xu T, Li C, Xie X, Jiang T. A Bioinspired Retinomorphic Device for Spontaneous Chromatic Adaptation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206816. [PMID: 36210720 DOI: 10.1002/adma.202206816] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Revised: 09/23/2022] [Indexed: 06/16/2023]
Abstract
Chromatic adaptation refers to the sensing and preprocessing of the spectral composition of incident light on the retina, and it is important for color-image recognition. It is challenging to apply sensing, memory, and processing functions to color images via the same physical process using the complementary metal-oxide-semiconductor technology because of redundant data detection, complicated signal conversion processes, and the requirement for additional memory modules. Inspired by the highly efficient chromatic adaptation of the human retina, a 2D oxygen-mediated platinum diselenide (PtSe2 ) device is presented to simultaneously apply sensing, memory, and processing functions to color images. The device exhibits a wavelength-dependent bipolar photoresponse and the linear pulse-number dependence of photoconductivity, which is dominated by the photon-mediated physical adsorption and desorption of oxygen molecules on bilayer PtSe2 . The proposed retinomorphic device shows superior image classification accuracy (over 90%) compared to an independent pseudocolor channel (less than 75%). Hence, it is promising for developing artificial vision perception systems with reduced architectural complexity.
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Affiliation(s)
- Yinlong Tan
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Hao Hao
- Institute for Quantum Science and Technology, College of Science, National University of Defense Technology, 410073, Changsha, P. R. China
| | - Yabo Chen
- College of Computer Science and Technology, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Yan Kang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Tao Xu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Cheng Li
- Institute for Quantum Science and Technology, College of Science, National University of Defense Technology, 410073, Changsha, P. R. China
| | - Xiangnan Xie
- Institute for Quantum Science and Technology, College of Science, National University of Defense Technology, 410073, Changsha, P. R. China
| | - Tian Jiang
- Institute for Quantum Science and Technology, College of Science, National University of Defense Technology, 410073, Changsha, P. R. China
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Liu X, Liu J, Fang M, Wei Y, Su Y, Chen Y, Peng G, Cai W, Luo W, Deng C, Zhang X. Energy Dissipation and Electrical Breakdown in Multilayer PtSe 2 Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51122-51129. [PMID: 36331247 DOI: 10.1021/acsami.2c15252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe2) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe2 devices, it is essential to understand the interfacial thermal properties between PtSe2 and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe2 devices. Here, we identify the energy dissipation behavior of multilayer PtSe2 devices and extract the actual TBC value of the PtSe2/SiO2 interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m-2 K-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe2 device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe2 device, revealing the breakdown current density of 17.7 MA cm-2 and threshold power density of 0.2 MW cm-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe2 devices and make PtSe2 an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.
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Affiliation(s)
- Xiao Liu
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Jinxin Liu
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Mengke Fang
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Yuehua Wei
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha410073, China
| | - Yue Su
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Yangbo Chen
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
| | - Gang Peng
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang332105, China
| | - Wei Luo
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Chuyun Deng
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang332105, China
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49
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Ayele ST, Obodo KO, Asres GA. First-principles investigation of potential water-splitting photocatalysts and photovoltaic materials based on Janus transition-metal dichalcogenide/WSe 2 heterostructures. RSC Adv 2022; 12:31518-31524. [PMID: 36380918 PMCID: PMC9631714 DOI: 10.1039/d2ra04964c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 10/26/2022] [Indexed: 09/08/2024] Open
Abstract
Two-dimensional materials have been shown to exhibit exotic properties that make them very interesting for both photo-catalytic and photo-voltaic applications. In this study, van der Waals corrected density functional theory calculations were carried out on heterostructures of MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2. The heterostructures are semiconductors with type II band alignments which are advantageous for electron-hole pair separation. The HSE06 level electronic band gap was found to be 1.093 eV, 1.427 eV and 1.603 eV for MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2 respectively. We have considered eight high symmetry stacking patterns for each of the heterostructures, and among them the most stable stacking orders were ascertained based on the interlayer binding energies. The binding energies of the most stable MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2 heterostructures were found to be -0.0604 eV, -0.1721 eV, and -0.3296 eV with an equilibrium interlayer space of 5.75 Å, 4.05 Å, and 4.76 Å respectively. The Power Conversion Efficiency (PCE) was found to be 20, 19.98, and 18.24 percent for the MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2 heterostructures, respectively. The results show that they can serve as suitable photovoltaic materials with high efficiency, thus, opening the possibilities of developing solar cells based on 2D Janus/TMD heterostructures. The most stable heterostructures are also tested for photocatalytic water splitting applications and WSeTe/WSe2 shows excellent photocatalytic activity by being active for full water splitting at pH = 7 and pH = 14, the MoSSe/WSe2 heterostructure is good for the oxygen evolution reaction and WSSe/WSe2 is active for the hydrogen evolution reaction.
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Affiliation(s)
- Samuel Tilahun Ayele
- Center for Materials Engineering, Addis Ababa Institute of Technology, Addis Ababa University, School of Multi-disciplinary Engineering Addis Ababa 1000 Ethiopia +251 902639816
- Space Science and Geospatial Institute Addis Ababa Ethiopia
| | - Kingsley O Obodo
- HySA Infrastructure Centre of Competence, Faculty of Engineering, North-West University, South Africa (NWU) 2531 South Africa
- National Institute of Theoretical and Computational Sciences Johannesburg 2000 South Africa
| | - Georgies Alene Asres
- Center for Materials Engineering, Addis Ababa Institute of Technology, Addis Ababa University, School of Multi-disciplinary Engineering Addis Ababa 1000 Ethiopia +251 902639816
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50
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Miao J, Zhang X, Tian Y, Zhao Y. Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3845. [PMID: 36364620 PMCID: PMC9658022 DOI: 10.3390/nano12213845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 10/23/2022] [Accepted: 10/26/2022] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. However, the performance of FETs based on 2D semiconductors has been limited by extrinsic factors, including high contact resistance, strong interfacial scattering, and unintentional doping. Among these challenges, contact resistance is a dominant issue, and important progress has been made in recent years. In this review, the Schottky-Mott model is introduced to show the ideal Schottky barrier, and we further discuss the contribution of the Fermi-level pinning effect to the high contact resistance in 2D semiconductor devices. In 2D FETs, Fermi-level pinning is attributed to the high-energy metal deposition process, which would damage the lattice of atomically thin 2D semiconductors and induce the pinning of the metal Fermi level. Then, two contact structures and the strategies to fabricate low-contact-resistance short-channel 2D FETs are introduced. Finally, our review provides practical guidelines for the realization of high-performance 2D-semiconductors-based FETs with low contact resistance and discusses the outlook of this field.
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Affiliation(s)
- Jialei Miao
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
| | - Xiaowei Zhang
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Ye Tian
- Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Yuda Zhao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan 430056, China
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