Enhancing Molecular n-Type Doping of Donor-Acceptor Copolymers by Tailoring Side Chains

Synergistically Improved Crystallinity and Molecular Doping Ability of Polythiophene-Diketopyrropyrrole Derivatives by m-Trifluoromethylbenzene Containing Side Chains for Improved Thermoelectric Materials

m-Trifluoromethylbenzene (FB) groups have been widely employed in various fields; however, no studies have reported the use of FB in side chains to enhance the carrier mobility and molecular doping of conjugated polymers. In this study, based on density functional theory (DFT) calculations, we discovered that FB groups can effectively bind to [FeCl4]-, the counterion of the p-type dopant FeCl3, thereby increasing doping ability. Consequently, FB groups were incorporated into the side chains of thiophene-diketopyrrolopyrrole-based donor-acceptor (D-A)-conjugated polymers, and a series of random conjugated polymers were synthesized (denoted as PDPPFB-x, where x represents the molar ratio of the FB side chain). The findings revealed that an appropriate number of FB groups can decrease the π-π stacking distances, enhance the films' crystallinity, and consequently improve the charge transfer ability. Furthermore, after doping with FeCl3, the UV-vis-NIR spectra indicated that the doping efficiency was augmented by increasing the molar fraction of the FB side chain. Among these polymers, PDPPFB-10 exhibited the highest conductivity and power factor, which were 2.0 and 1.5 times higher than those of PDPPFB-0, respectively. These results illustrated a straightforward molecular design strategy for enhancing the crystallinity and conductivity of conjugated polymers, thereby expanding the way to optimize their thermoelectric performance.

High-Performance Black Copolymers Enabling Full Spectrum Control in Electrochromic Devices

Black-to-transparent electrochromism is hailed as the holy grail of organic optoelectronics. Despite its potential, designing black electrochromic materials that fully absorb visible light remains a significant challenge. Electroactive materials that simultaneously possess excellent cyclic stability, fast switching times, and high coloration efficiency are rare. In this study, we successfully designed copolymers that fully absorb the entire visible spectrum by judiciously selecting four types of monomers. We incorporated two types of polar side chains to synergistically enhance the ionic conductivity of the copolymers, thus improving the performance of electrochromic devices. Among these electrochromic devices, the P2-a device exhibits cycling stability exceeding 105 cycles, and the P2-c device demonstrates a coloring/ bleaching time of 0.82 s/0.86 s and achieves a coloration efficiency of 1078 cm²/C. This study proposes a strategy for designing and synthesizing high-performance black electrochromic copolymers.

Carrier-Carrier Repulsion Limits the Conductivity of N-Doped Organic Semiconductors

Molecular doping is a key strategy to enhance the electrical conductivity of organic semiconductors. Typically, the electrical conductivity shows a maximum value upon increased doping, after which the conductivity decreases. This decrease in conductivity is commonly attributed to unfavorable changes in the morphology. However, in recent simulation work, has shown, that the conductivity-at high doping-is instead limited by electron-electron repulsion rather than by morphology, at least for some material combinations. Based on the simulations, this limitation is expected to show up in the dependence of the Seebeck coefficient versus carrier density: the Seebeck coefficient will follow Heike's formula if carrier-carrier repulsion limits the conductivity. Here, the electrical conductivity and Seebeck coefficient are measured as a function of doping for a series of n-type organic semiconductors. Additionally, the resulting carrier density is measured using metal-insulator-semiconductor diodes, which link dopant loading and the number of charge carriers. At high carrier densities, the Seebeck coefficient indeed follows Heike's formula, confirming that the conductivity is limited by carrier-carrier repulsion rather than by morphological effects. This study shows that current models of hopping transport in organic semiconductors may be incomplete. As a result, this study offers novel insights in the design of organic semiconductors.

Isomers of n-Type Poly(thiophene-alt-co-thiazole) for Organic Thermoelectrics

n-Type polythiophene represents a promising category of n-type polymer thermoelectric materials known for their straightforward structure and scalable synthesis. However, n-type polythiophene often suffers from a twisted backbone and poor stacking property when introducing high-density electron-withdrawing groups for a lower lowest unoccupied molecular orbital (LUMO) level, which is considered to be beneficial for n-doping efficiency. Herein, we developed two isomers of polythiophene derivatives, PTTz1 and PTTz2, by inserting thiazole units into the polythiophene backbone composed of thieno[3,4-c]pyrrole-4,6-dione (TPD) and thiophene-3,4-dicarbonitrile (2CNT). Although PTTz1 and PTTz2 share a similar polymer skeleton, they differ in thiazole configuration, with the nitrogen atoms of the thiazole units oriented toward TPD and 2CNT, respectively. The insertion of thiazole units significantly planarizes the polythiophene backbone while largely preserving low LUMO levels. Notably, PTTz2 exhibits a more coplanar backbone and closer π-stacking compared to PTTz1, resulting in a greatly enhanced electron mobility. Both PTTz1 and PTTz2 can be easily n-doped due to their deep LUMO levels. PTTz2 demonstrates superior thermoelectric performance, with an electrical conductivity of 50.3 S cm-1 and a power factor of 23.8 μW m-1 K-2, which is approximately double that of PTTz1. This study highlights the impact of the thiazole unit on n-type polythiophene derivatives and provides valuable guidelines for the design of high-performance n-type polymer thermoelectric materials.

The Effect of Organic Semiconductor Electron Affinity on Preventing Parasitic Oxidation Reactions Limiting Performance of n-Type Organic Electrochemical Transistors

A key challenge in the development of organic mixed ionic-electronic conducting materials (OMIEC) for high performance electrochemical transistors is their stable performance in ambient. When operating in aqueous electrolyte, potential reactions of the electrochemically injected electrons with air and water could hinder their persistence, leading to a reduction in charge transport. Here, the impact of deepening the LUMO energy level of a series of electron-transporting semiconducting polymers is evaluated, and subsequently rendering the most common oxidation processes of electron polarons thermodynamically unfavorable, on organic electrochemical transistors (OECTs) performance. Employing time resolved spectroelectrochemistry with three analogous polymers having varying electron affinities (EA), it is found that an EA below the thermodynamic threshold for oxidation of its electron polarons by oxygen significantly improves electron transport and lifetime in air. A polymer with a sufficiently large EA and subsequent thermodynamically unfavorable oxidation of electron polarons is reported, which is used as the semiconducting layer in an OECT, in its neutral and N-DMBI doped form, resulting in an excellent and air-stable OECT performance. These results show a general design methodology to avoid detrimental parasitic reactions under ambient conditions, and the benefits that arise in electrical performance.

On-Demand Catalysed n-Doping of Organic Semiconductors

A new approach to control the n-doping reaction of organic semiconductors is reported using surface-functionalized gold nanoparticles (f-AuNPs) with alkylthiols acting as the catalyst only upon mild thermal activation. To demonstrate the versatility of this methodology, the reaction of the n-type dopant precursor N-DMBI-H with several molecular and polymeric semiconductors at different temperatures with/without f-AuNPs, vis-à-vis the unfunctionalized catalyst AuNPs, was investigated by spectroscopic, morphological, charge transport, and kinetic measurements as well as, computationally, the thermodynamic of catalyst activation. The combined experimental and theoretical data demonstrate that while f-AuNPs is inactive at room temperature both in solution and in the solid state, catalyst activation occurs rapidly at mild temperatures (~70 °C) and the doping reaction completes in few seconds affording large electrical conductivities (~10-140 S cm-1). The implementation of this methodology enables the use of semiconductor+dopant+catalyst solutions and will broaden the use of the corresponding n-doped films in opto-electronic devices such as thin-film transistors, electrochemical transistors, solar cells, and thermoelectrics well as guide the design of new catalysts.

Alcohol-Processable All-Polymer n-Type Thermoelectrics

The general strategy for n-type organic thermoelectric is to blend n-type conjugated polymer hosts with small molecule dopants. In this work, all-polymer n-type thermoelectric is reported by dissolving a novel n-type conjugated polymer and a polymer dopant, poly(ethyleneimine) (PEI), in alcohol solution, followed by spin-coating to give polymer host/polymer dopant blend film. To this end, an alcohol-soluble n-type conjugated polymer is developed by attaching polar and branched oligo (ethylene glycol) (OEG) side chains to a cyano-substituted poly(thiophene-alt-co-thiazole) main chain. The main chain results in the n-type property and the OEG side chain leads to the solubility in hexafluorineisopropanol (HFIP). In the polymer host/polymer dopant blend film, the Coulombic interaction between the dopant counterions and the negatively charged polymer chains is reduced and the ordered stacking of the polymer host is preserved. As a result, the polymer host/polymer dopant blend exhibits the power factor of 36.9 µW m-1 K-1, which is one time higher than that of the control polymer host/small molecule dopant blend. Moreover, the polymer host/polymer dopant blend shows much better thermal stability than the control polymer host/small molecule dopant blend. This research demonstrates the high performance and excellent stability of all-polymer n-type thermoelectric.

An n-Type Open-Shell Conjugated Polymer with High-Spin Ground-State and High Intrinsic Electrical Conductivity

Open-shell conjugated polymers with a high intrinsic conductivity and high-spin ground state hold considerable promise for applications in organic electronics and spintronics. Herein, two novel acceptor-acceptor (A-A) conjugated polymers based on a highly electron-deficient quinoidal benzodifurandione unit have been developed, namely DPP-BFDO-Th and DPP-BFDO. The incorporation of the quinoidal moiety into the polymers backbones enables deeply aligned lower-lying lowest unoccupied molecular orbital (LUMO) levels of below -4.0 eV. Notably, DPP-BFDO exhibits an exceptionally low LUMO (-4.63 eV) and a high-spin ground state characterized by strong diradical characters. Moreover, a self-doping through intermolecular charge-transfer is observed for DPP-BFDO, as evidenced by X-ray photoelectron spectroscopy (XPS) studies. The high carrier concentration in combination with a planar and linear conjugated backbone yields a remarkable electrical conductivity (σ) of 1.04 S cm-1 in the "undoped" native form, ranking among the highest values reported for n-type radical-based conjugated polymers. When employed as an n-type thermoelectric material, DPP-BFDO achieves a power factor of 12.59 μW m-1 K-2. Furthermore, upon n-doping, the σ could be improved to 65.68 S cm-1. This study underscores the great potential of electron-deficient quinoidal units in constructing dopant-free n-type conductive polymers with a high-spin ground state and exceptional intrinsic conductivity.

Impact of Oligoether Side-Chain Length on the Thermoelectric Properties of a Polar Polythiophene

Conjugated polymers with oligoether side chains make up a promising class of thermoelectric materials. In this work, the impact of the side-chain length on the thermoelectric and mechanical properties of polythiophenes is investigated. Polymers with tri-, tetra-, or hexaethylene glycol side chains are compared, and the shortest length is found to result in thin films with the highest degree of order upon doping with the p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). As a result, a stiff material with an electrical conductivity of up to 830 ± 15 S cm-1 is obtained, resulting in a thermoelectric power factor of about 21 μW m-1 K-2 in the case of as-cast films. Aging at ambient conditions results in an initial decrease in thermoelectric properties but then yields a highly stable performance for at least 3 months, with values of about 200 S cm-1 and 5 μW m-1 K-2. Evidently, identification of the optimal side-chain length is an important criterion for the design of conjugated polymers for organic thermoelectrics.

Theoretical Perspective of Enhancing Order in n-Doped Thermoelectric Polymers through Side Chain Engineering: The Interplay of Counterion-Backbone Interaction and Side Chain Steric Hindrance

Donor-acceptor (D-A) copolymers doped with n-type dopants are widely sought after for their potential in organic thermoelectric devices. However, the existing structural disorder significantly hampers their charge transport and thermoelectric performance. In this Letter, we propose a mechanism to mitigate this disorder through side chain engineering. Utilizing molecular dynamics simulations, we demonstrate that strong Coulomb interactions between counterions and charged polymer backbones induce a transition in the stacking arrangement of the polymer backbones from a slipped to a vertical configuration. However, the presence of side chain steric hindrance impedes the formation of closely packed and ordered vertical stacking arrangements, resulting in greater distances between adjacent backbones and a higher level of structural disorder in the doped films. Therefore, we propose minimizing side chain steric hindrance to enhance the structural order in doped films. Our findings provide essential insights for advancing high-performance thermoelectric polymers.

High-Performance and Ecofriendly Organic Thermoelectrics Enabled by N-Type Polythiophene Derivatives with Doping-Induced Molecular Order

The ability of n-type polymer thermoelectric materials to tolerate high doping loading limits further development of n-type polymer conductivity. Herein, two alcohol-soluble n-type polythiophene derivatives that are n-PT3 and n-PT4 are reported. Due to the ability of two polymers to tolerate doping loading more significantly than 100 mol%, both achieve electrical conductivity >100 S cm-1 . Moreover, the conductivity of both polythiophenes remains almost constant at high doping concentrations with excellent doping tunability, which may be related to their ability to overcome charging-induced backbone torsion and morphology change caused by saturated doping. The characterizations reveal that n-PT4 has a high doping level and carrier concentration (>3.10 × 1020  cm-3 ), and the carrier concentration continues to increase as the doping concentration increases. In addition, doping leads to improved crystal structure of n-PT4, and the crystallinity does not decrease significantly with increasing doping concentration; even the carrier mobility increases with it. The synergistic effect of these two leads to both n-PT3 and n-PT4 achieving a breakthrough of 100 in conductivity and power factor. The DMlmC-doped n-PT4 achieves a power factor of over 150 µW m-1  K-2 . These values are among the highest for n-type organic thermoelectric materials.

Interplay between Side Chain Density and Polymer Alignment: Two Competing Strategies for Enhancing the Thermoelectric Performance of P3HT Analogues

A series of polythiophenes with varying side chain density was synthesized, and their electrical and thermoelectric properties were investigated. Aligned and non-aligned thin films of the polymers were characterized in the neutral and chemically doped states. Optical and diffraction measurements revealed an overall lower order in the thin films with lower side chain density, also confirmed using polarized optical experiments on aligned thin films. However, upon doping the non-aligned films, a sixfold increase in electrical conductivity was observed for the polythiophene with the lowest side chain density compared to poly(3-hexylthiophene) (P3HT). We found that the improvement in conductivity was not due to a larger charge carrier density but an increase in charge carrier mobility after doping with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). On the other hand, doped aligned films did not show the same trend; lower side chain density instead led to a lower conductivity and Seebeck coefficient compared to those for P3HT. This was attributed to the poorer alignment of the polymer thin films with lower side chain density. The study demonstrates that optimizing side chain density is a synthetically simple and effective way to improve electrical conductivity in polythiophene films relevant to thermoelectric applications.

High-Performance n-Type Organic Thermoelectrics Enabled by Synergistically Achieving High Electron Mobility and Doping Efficiency

n-Doped polymers with high electrical conductivity (σ) are still very scarce in organic thermoelectrics (OTEs), which limits the development of efficient organic thermoelectric generators. A series of fused bithiophene imide dimer-based polymers, PO8, PO12, and PO16, incorporating distinct oligo(ethylene glycol) side-chain to optimize σ is reported here. Three polymers show a monotonic electron mobility decrease as side-chain size increasing due to the gradually lowered film crystallinity and change of backbone orientation. Interestingly, polymer PO12 with a moderate side-chain size delivers a champion σ up to 92.0 S cm-1 and a power factor (PF) as high as 94.3 µW m-1 K-2 in the series when applied in OTE devices. The PF value is among the highest ones for the solution-processing n-doped polymers. In-depth morphology studies unravel that the moderate crystallinity and the formation of 3D conduction channel derived from bimodal orientation synergistically contribute to high doping efficiency and large charge carrier mobility, thus resulting in high performance for the PO12-based OTEs. The results demonstrate the great power of simple tuning of side chain in developing n-type polymers with substantial σ for improving organic thermoelectric performance.

Novel Organic Superbase Dopants for Ultraefficient N-Doping of Organic Semiconductors

Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping of OSCs remains a central challenge. Herein, the discovery of two organic superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants for OSCs is reported. Typical n-type semiconductors such as N2200 and PC₆₁ BM are shown to experience a significant increase of conductivity upon doping by the two dopants. In particular, the optimized electrical conductivity of P2-t-Bu-doped PC₆₁ BM reaches a record-high value of 2.64 S cm^-1 . The polaron generation efficiency of P2-t-Bu-doped in PC₆₁ BM is found to be over 35%, which is 2-3 times higher than that of benchmark n-dopant N-DMBI. In addition, a deprotonation-initiated, nucleophilic-attack-based n-doping mechanism is proposed for the organic superbases, which involves the deprotonation of OSC molecules, the nucleophilic attack of the resulting carbanions on the OSC's π-bonds, and the subsequent n-doping through single electron transfer process between the anionized and neutral OSCs. This work highlights organic superbases as promising n-dopants for OSCs and opens up opportunities to explore and develop highly efficient n-dopants.

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.

Self-Doping Naphthalene Diimide Conjugated Polymers for Flexible Unipolar n-Type OTFTs

The development of high-performance organic thin-film transistor (OTFT) materials is vital for flexible electronics. Numerous OTFTs are so far reported but obtaining high-performance and reliable OTFTs simultaneously for flexible electronics is still challenging. Herein, it is reported that self-doping in conjugated polymer enables high unipolar n-type charge mobility in flexible OTFTs, as well as good operational/ambient stability and bending resistance. New naphthalene diimide (NDI)-conjugated polymers PNDI2T-NM17 and PNDI2T-NM50 with different contents of self-doping groups on their side chains are designed and synthesized. The effects of self-doping on the electronic properties of resulting flexible OTFTs are investigated. The results reveal that the flexible OTFTs based on self-doped PNDI2T-NM17 exhibit unipolar n-type charge-carrier properties and good operational/ambient stability thanks to the appropriate doping level and intermolecular interactions. The charge mobility and on/off ratio are fourfold and four orders of magnitude higher than those of undoped model polymer, respectively. Overall, the proposed self-doping strategy is useful for rationally designing OTFT materials with high semiconducting performance and reliability.

Charge-Transfer-Induced Self-Assembly of Doped Conjugated Block Copolymer Nanofibers

Here, we report charge-transfer-driven self-assembly of conjugated block copolymers (BCP) into highly doped conjugated polymer nanofibers. The ground-state integer charge transfer (ICT) between a BCP composed of poly(3-hexylthiophene) and poly(ethylene oxide) (P3HT-b-PEO) and electron-deficient 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) induced spontaneous self-assembly of the donor and the acceptor into well-defined one-dimensional nanofibers. The presence of the PEO block plays an important role for the self-assembly by providing a polar environment that can stabilize nanoscale charge transfer (CT) assemblies. The doped nanofibers were responsive to various external stimuli such as heat, chemical, and light and exhibited efficient photothermal properties in the near-IR region. The CT-driven BCP self-assembly reported here provides a new platform for the fabrication of highly doped semiconductor nanostructures.

Organic thermoelectric generators: working principles, materials, and fabrication techniques

Organic thermoelectricity is a blooming field of research that employs organic (semi)conductors to recycle waste heat through its partial conversion to electrical power. Such a conversion occurs by means of organic thermoelectric generator (OTEG) devices. The recent process on the synthesis of novel materials and on the understanding of doping mechanisms to increase conductivity has tremendously narrowed the gap between laboratory research and their application in actual applications. This Feature Article intends to highlight the impressive progress in materials and fabrication techniques for OTEGs made in recent years.

Revealing the Enhanced Thermoelectric Properties of Controllably Doped Donor-Acceptor Copolymer: The Impact of Regioregularity

Albeit considerable attention to the fast-developing organic thermoelectric (OTE) materials due to their flexibility and non-toxic features, it is still challenging to design an OTE polymer with superior thermoelectric properties. In this work, two "isomorphic" donor-acceptor (D-A) conjugated polymers are studied as the semiconductor in OTE devices, revealing for the first time the internal mechanism of regioregularity on thermoelectric performances in D-A type polymers. A higher molecular structure regularity can lead to higher crystalline order and mobility, higher doping efficiency, order of energy state, and thermoelectric (TE) performance. As a result, the regioregular P2F exhibits a maximum power factor (PF) of up to 113.27 µW m^-1  K^-2 , more than three times that of the regiorandom PRF (35.35 µW m^-1  K^-2 ). However, the regular backbone also implies lower miscibility with a dopant, negatively affecting TE performance. Therefore, the trade-off between doping efficiency and miscibility plays a vital role in OTE materials, and this work sheds light on the molecular design strategy of OTE polymers with state-of-the-art performances.

Recent advances in n-type and ambipolar organic semiconductors and their multi-functional applications

Organic semiconductors have received broad attention and research interest due to their unique integration of semiconducting properties with structural tunability, intrinsic flexibiltiy and low cost. In order to meet the requirements of organic electronic devices and their integrated circuits, p-type, n-type and ambipolar organic semiconductors are all necessary. However, due to the limitation in both material synthesis and device fabrication, the development of n-type and ambipolar materials is quite behind that of p-type materials. Recent development in synthetic methods of organic semiconductors greatly enriches the range of n-type and ambipolar materials. Moreover, the newly developed materials with multiple functions also put forward multi-functional device applications, including some emerging research areas. In this review, we give a timely summary on these impressive advances in n-type and ambipolar organic semiconductors with a special focus on their synthesis methods and advanced materials with enhanced properties of charge carrier mobility, integration of high mobility and strong emission and thermoelectric properties. Finally, multi-functional device applications are further demonstrated as an example of these developed n-type and ambipolar materials.

Highly Conductive and Solution-Processable n-Doped Transparent Organic Conductor

Transparent conductors (TCs) play a vital role in displays, solar cells, and emerging printed electronics. Here, we report a solution-processable n-doped organic conductor from copper-catalyzed cascade reactions in the air, which involves oxidative polymerization and reductive doping in one pot. The formed polymer ink is shelf-stable over 20 days and can endure storage temperatures from -20 to 65 °C. The optimized n-doped thin-film TC exhibits a low sheet resistance of 45 Ω/sq and a high transmittance (T₅₅₀ > 80%), which can rival indium tin oxide. The transparent organic conductor exhibits excellent durability under accelerated weathering tests (85 °C/85% RH). Furthermore, the n-doped polymer film can also function as an electrode material with a high volumetric capacity. When it is paired with p-doped PEDOT:PSS, a record-high coloration efficiency is obtained in a dual-polymer electrochromic device.

Electron-Deficient Polycyclic Molecules via Ring Fusion for n-Type Organic Electrochemical Transistors

The primary challenge for n-type small-molecule organic electrochemical transistors (OECTs) is to improve their electron mobilities and thus the key figure of merit μC*. Nevertheless, few reports in OECTs have specially proposed to address this issue. Herein, we report a 10-ring-fused polycyclic π-system consisting of the core of naphthalene bis-isatin dimer and the terminal moieties of rhodanine, which features intramolecular noncovalent interactions, high π-delocalization and strong electron-deficient characteristics. We find that this extended π-conjugated system using the ring fusion strategy displays improved electron mobilities up to 0.043 cm²  V^-1  s^-1 compared to our previously reported small molecule gNR, and thereby leads to a remarkable μC* of 10.3 F cm^-1  V^-1  s^-1 in n-type OECTs, which is the highest value reported to date for small-molecule OECTs. This work highlights the importance of π-conjugation extension in polycyclic-fused molecules for enhancing the performance of n-type small-molecule OECTs.

Approaches and Perspective of Coarse-Grained Modeling and Simulation for Polymer-Nanoparticle Hybrid Systems

Molecular modeling and simulations have emerged as effective and indispensable tools to characterize polymeric systems. They provide fundamental and essential insights to design a product of the required properties and to improve the understanding of a phenomenon at the molecular level for a particular system. The polymer-nanoparticle hybrids are materials with outstanding properties and correspondingly large applications whose study has benefited from this new paradigm. However, despite the significant expansion of modern day computational powers, investigation of the long time and large length scale phenomenon in polymeric and polymer-nanoparticle systems is still a challenging task to complete through all-atom molecular dynamics (AA-MD) simulations. To circumvent this problem, a variety of coarse-grained (CG) models have been proposed, ranging from the generic CG models for qualitative properties predictions to more realistic chemically specific CG models for quantitative properties predictions. These CG models have already delivered some success stories in the study of several spatial and temporal evolutions of many processes. Some of these studies were beyond the feasibility of traditional atomistic resolution models due to either the size or the time constraints. This review captures the different types of popular CG approaches that are utilized in the investigation of the microscopic behavior of polymer-nanoparticle hybrid systems. The rationale of this article is to furnish an overview of the popular CG approaches and their applications, to review several important and most recent developments, and to delineate the perspectives on future directions in the field.

Thiazole Imide-Based All-Acceptor Homopolymer with Branched Ethylene Glycol Side Chains for Organic Thermoelectrics

n-Type semiconducting polymers with high thermoelectric performance remain challenging due to the scarcity of molecular design strategy, limiting their applications in organic thermoelectric (OTE) devices. Herein, we provide a new approach to enhance the OTE performance of n-doped polymers by introducing acceptor-acceptor (A-A) type backbone bearing branched ethylene glycol (EG) side chains. When doped with 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), the A-A homopolymer PDTzTI-TEG exhibits n-type electrical conductivity (σ) up to 34 S cm^-1 and power factor value of 15.7 μW m^-1  K^-2 . The OTE performance of PDTzTI-TEG is far greater than that of homopolymer PBTI-TEG (σ=0.27 S cm^-1 ), indicating that introducing electron-deficient thiazole units in the backbone further improves the n-doping efficiency. These results demonstrate that developing A-A type polymers with EG side chains is an effective strategy to enhance n-type OTE performance.

Wijaya JB, Grünewald F, de Vries AH, Marrink SJ, Broer R, Havenith RWA. Strategies for Enhancing the Dielectric Constant of Organic Materials

High dielectric constant organic semiconductors, often obtained by the use of ethylene glycol (EG) side chains, have gained attention in recent years in the efforts of improving the device performance for various applications. Dielectric constant enhancements due to EGs have been demonstrated extensively, but various effects, such as the choice of the particular molecule and the frequency and temperature regime, that determine the extent of this enhancement require further understanding. In this work, we study these effects by means of polarizable molecular dynamics simulations on a carefully selected set of fullerene derivatives with EG side chains. The selection allows studying the dielectric response in terms of both the number and length of EG chains and also the choice of the group connecting the fullerene to the EG chain. The computed time- and frequency-dependent dielectric responses reveal that the experimentally observed rise of the dielectric constant within the kilo/megahertz regime for some molecules is likely due to the highly stretched dielectric response of the EGs: the initial sharp increase over the first few nanoseconds is followed by a smaller but persistent increase in the range of microseconds. Additionally, our computational protocol allows the separation of different factors that contribute to the overall dielectric constant, providing insights to make several molecular design guides for future organic materials in order to enhance their dielectric constant further.

Charge-Compensated N-Doped π-Conjugated Polymers: Toward both Thermodynamic Stability of N-Doped States in Water and High Electron Conductivity

The understanding and applications of electron-conducting π-conjugated polymers with naphtalene diimide (NDI) blocks show remarkable progress in recent years. Such polymers demonstrate a facilitated n-doping due to the strong electron deficiency of the main polymer chain and the presence of the positively charged side groups stabilizing a negative charge of the n-doped backbone. Here, the n-type conducting NDI polymer with enhanced stability of its n-doped states for prospective "in-water" applications is developed. A combined experimental-theoretical approach is used to identify critical features and parameters that control the doping and electron transport process. The facilitated polymer reduction ability and the thermodynamic stability in water are confirmed by electrochemical measurements and doping studies. This material also demonstrates a high conductivity of 10-2  S cm-1  under ambient conditions and 10-1  S cm-1  in vacuum. The modeling explains the stabilizing effects  for various dopants. The simulations show a significant doping-induced "collapse" of the positively charged side chains on the core bearing a partial negative charge. This explains a decrease in the lamellar spacing observed in experiments. This study fundamentally enables a novel pathway for achieving both thermodynamic stability of the n-doped states in water and the high electron conductivity of polymers.

Transporting holes stably under iodide invasion in efficient perovskite solar cells

Highly efficient halide perovskite solar cells generally rely on lithium-doped organic hole transporting layers that are thermally and chemically unstable, in part because of migration of iodide anions from the perovskite layer. We report a solution strategy to stabilize the hole transport in organic layers by ionic coupling positive polymer radicals and molecular anions through an ion-exchange process. The target layer exhibited a hole conductivity that was 80 times higher than that of the conventional lithium-doped layer. Moreover, after extreme iodide invasion caused by light-soaking at 85°C for 200 hours, the target layer maintained high hole conductivity and well-matched band alignment. This ion-exchange strategy enabled fabrication of perovskite solar cells with a certified power conversion efficiency of 23.9% that maintained 92% under standard illumination at 85°C after 1000 hours.

Recent Advances and Prospects of Small Molecular Organic Thermoelectric Materials

Thermoelectric (TE) materials possess unique energy conversion capabilities between heat and electrical energy. Small organic semiconductors have aroused widespread attention for the fabrication of TE devices due to their advantages of low toxicity, large area, light weight, and easy fabrication. However, the low TE properties hinder their large-scale commercial application. Herein, the basic knowledge about TE materials, including parameters affecting the TE performance and the remaining challenges of the organic thermoelectric (OTE) materials, are initially summarized in detail. Second, the optimization strategies of power factor, including the selection and design of dopants and structural modification of the dope-host are introduced. Third, some achievements of p- and n-type small molecular OTE materials are highlighted to briefly provide their future developing trend; finally, insights on the future development of OTE materials are also provided in this study.

Controlled n-Doping of Naphthalene-Diimide-Based 2D Polymers

2D polymers (2DPs) are promising as structurally well-defined, permanently porous, organic semiconductors. However, 2DPs are nearly always isolated as closed shell organic species with limited charge carriers, which leads to low bulk conductivities. Here, the bulk conductivity of two naphthalene diimide (NDI)-containing 2DP semiconductors is enhanced by controllably n-doping the NDI units using cobaltocene (CoCp₂ ). Optical and transient microwave spectroscopy reveal that both as-prepared NDI-containing 2DPs are semiconducting with sub-2 eV optical bandgaps and photoexcited charge-carrier lifetimes of tens of nanoseconds. Following reduction with CoCp₂ , both 2DPs largely retain their periodic structures and exhibit optical and electron-spin resonance spectroscopic features consistent with the presence of NDI-radical anions. While the native NDI-based 2DPs are electronically insulating, maximum bulk conductivities of >10^-4  S cm^-1 are achieved by substoichiometric levels of n-doping. Density functional theory calculations show that the strongest electronic couplings in these 2DPs exist in the out-of-plane (π-stacking) crystallographic directions, which indicates that cross-plane electronic transport through NDI stacks is primarily responsible for the observed electronic conductivity. Taken together, the controlled molecular doping is a useful approach to access structurally well-defined, paramagnetic, 2DP n-type semiconductors with measurable bulk electronic conductivities of interest for electronic or spintronic devices.

Regulation of High Miscibility for Efficient Charge-Transport in n-Doped Conjugated Polymers

Strong interchain interactions of conjugated polymers usually result in poor miscibility with molecular dopants, limiting the doping efficiency because of uncontrolled phase separation. We have developed a strategy to achieve efficient charge-transport and high doping miscibility in n-doped conjugated polymers. We solve the miscibility issue through disorder side-chains containing dopants better. Systemic structural characterization reveals a farther side-chain branching point will lead to higher disorders, which provides appropriate sites to accommodate extrinsic molecular dopants without harming original chain packings and charge-transport channels. Therefore, better sustainability of solid-state microstructure is obtained, yielding a stable conductivity even when overloading massive dopants. This work highlights the importance of realizing high host-dopant miscibility in molecular doping of conjugated polymers.

Versatile Solution-Processed Reductive Interface Layer for Contact Engineering of Staggered Organic Field-Effect Transistors

Efficient charge injection/extraction from/to contact electrodes is essential to realize organic electronic and optoelectronic devices with optimum characteristics for many applications. Herein, we studied a versatile reductive interlayer based on sodium borohydride (NaBH₄) to control the contact properties of the staggered organic field-effect transistors (OFETs) either by doping and/or by regulating the contribution of charge carriers. The versatile functionalities of the NaBH₄ layer are mainly determined by the alignment of frontier molecular orbitals of donor-acceptor (D-A) type copolymer semiconductors and the work function of the contact electrode. After incorporating the NaBH₄ layer, the work function of the bottom-contact gold electrode can be decreased significantly by 1.0 eV, which makes it favorable to efficient electron injection. An Ohmic contact is achieved by the spontaneous injection of electrons to the n-type organic semiconductors with high electron affinity while converting the OFET operation mode to n-type characteristics by blocking the counter-charge carriers for the other types of ambipolar and p-type semiconductors. The solution-processed reducing agent can be a valuable approach to develop high-performance printed and flexible electronic devices through careful engineering to obtain proper contributions of charge carriers either as electrons or holes in various D-A copolymer semiconductors.

Soft Organic Thermoelectric Materials: Principles, Current State of the Art and Applications

The enormous demand for waste heat utilization and burgeoning eco-friendly wearable materials has triggered huge interest in the development of thermoelectric materials that can harvest low-cost energy resources by converting waste heat to electricity efficiently. In particular, due to their high flexibility, nontoxicity, cost-effectivity, and promising applicability in various fields, organic thermoelectric materials are drawing more attention compared with their toxic, expensive, heavy, and brittle inorganic counterparts. Organic thermoelectric materials are approaching the figure of merit of the inorganic ones via the construction and optimization of unique transport pathways and device geometries. This review presents the recent development of the interdependence and decoupling principles of the thermoelectric efficiency parameters as well as the new achievements of high performance organic thermoelectric materials. Moreover, this review also discusses the advances in the thermoelectric devices with emphasis on their energy-related applications. It is believed that organic thermoelectric materials are emerging as green energy alternatives rivaling their conventional inorganic counterparts in the efficient and pure electricity harvesting from waste heat and solar thermal energy.

Recent Developments of n-Type Organic Thermoelectric Materials: Influence of Structure Modification on Molecule Arrangement and Solution Processing

Organic semiconductor (OSCs) thermoelectric materials have been studied widely due to their low thermal conductivity and solution processing characteristics. Currently, the high conductivity (up to 1000 s cm^-1 ) has boosted the performance of p-type organic thermoelectric materials substantially. In contrast, the development of n-type organic thermoelectric materials is still limited by their low mobility, inferior air stability, and poor doping efficiency, which is relevant to the molecule structure and dopant dispersion. Herein, the recent development of n-type organic thermoelectric materials was reviewed with an emphasis on molecule structure modification and solution processing. Methods for optimizing conjugate structure were summarized from the effects of conjugated backbone modification and side chains diversification on molecular stacking. The primary n-type dopants were also summarized briefly. Especially, the role of solution aggregation controlling on film preparation and properties was given special attention. Additionally, the emergence of organic diradicals with low lowest unoccupied molecular orbital energy level and no doping was introduced, which shows great potential in n-type organic thermoelectric materials. All these endeavors have led to the development of n-type OSCs materials. This Review is aimed at illustrating the state-of-the-art progress and providing some guideline for the design of organic thermoelectric materials in the future.

Electrically Conducting Elastomeric Fibers with High Stretchability and Stability

Stretchable conducting materials are appealing for the design of unobtrusive wearable electronic devices. Conjugated polymers with oligoethylene glycol side chains are excellent candidate materials owing to their low elastic modulus and good compatibility with polar stretchable polymers. Here, electrically conducting elastomeric blend fibers with high stretchability, wet spun from a blend of a doped polar polythiophene with tetraethylene glycol side chains and a polyurethane are reported. The wet-spinning process is versatile, reproducible, scalable, and produces continuous filaments with a diameter ranging from 30 to 70 µm. The fibers are stretchable up to 480% even after chemical doping with iron(III) p-toluenesulfonate hexahydrate and exhibit an electrical conductivity of up to 7.4 S cm^-1 , which represents a record combination of properties for conjugated polymer-based fibers. The fibers remain conductive during elongation until fiber fracture and display excellent long-term stability at ambient conditions. Cyclic stretching up to 50% strain for at least 400 strain cycles reveals that the doped fibers exhibit high cyclic stability and retain their electrical conductivity. Finally, a directional strain sensing device, which makes use of the linear increase in resistance of the fibers up to 120% strain is demonstrated.

Backbone-driven host-dopant miscibility modulates molecular doping in NDI conjugated polymers

Molecular doping is the key to enabling organic electronic devices, however, the design strategies to maximize doping efficiency demands further clarity and comprehension. Previous reports focus on the effect of the side chains, but the role of the backbone is still not well understood. In this study, we synthesize a series of NDI-based copolymers with bithiophene, vinylene, and acetylenic moieties (P1G, P2G, and P3G, respectively), all containing branched triethylene glycol side chains. Using computational and experimental methods, we explore the impact of the conjugated backbone using three key parameters for doping in organic semiconductors: energy levels, microstructure, and miscibility. Our experimental results show that P1G undergoes the most efficient n-type doping owed primarily to its higher dipole moment, and better host-dopant miscibility with N-DMBI. In contrast, P2G and P3G possess more planar backbones than P1G, but the lack of long-range order, and poor host-dopant miscibility limit their doping efficiency. Our data suggest that backbone planarity alone is not enough to maximize the electrical conductivity (σ) of n-type doped organic semiconductors, and that backbone polarity also plays an important role in enhancing σ via host-dopant miscibility. Finally, the thermoelectric properties of doped P1G exhibit a power factor of 0.077 μW m-1 K-2, and ultra-low in-plane thermal conductivity of 0.13 W m-1K-1 at 5 mol% of N-DMBI, which is among the lowest thermal conductivity values reported for n-type doped conjugated polymers.

Lactone Backbone Density in Rigid Electron-Deficient Semiconducting Polymers Enabling High n-type Organic Thermoelectric Performance

Three lactone-based rigid semiconducting polymers were designed to overcome major limitations in the development of n-type organic thermoelectrics, namely electrical conductivity and air stability. Experimental and theoretical investigations demonstrated that increasing the lactone group density by increasing the benzene content from 0 % benzene (P-0), to 50 % (P-50), and 75 % (P-75) resulted in progressively larger electron affinities (up to 4.37 eV), suggesting a more favorable doping process, when employing (N-DMBI) as the dopant. Larger polaron delocalization was also evident, due to the more planarized conformation, which is proposed to lead to a lower hopping energy barrier. As a consequence, the electrical conductivity increased by three orders of magnitude, to achieve values of up to 12 S cm and Power factors of 13.2 μWm^-1  K^-2 were thereby enabled. These findings present new insights into material design guidelines for the future development of air stable n-type organic thermoelectrics.

Doping Approaches for Organic Semiconductors

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Unconventional Thermoelectric Materials for Energy Harvesting and Sensing Applications

Heat is an abundant but often wasted source of energy. Thus, harvesting just a portion of this tremendous amount of energy holds significant promise for a more sustainable society. While traditional solid-state inorganic semiconductors have dominated the research stage on thermal-to-electrical energy conversion, carbon-based semiconductors have recently attracted a great deal of attention as potential thermoelectric materials for low-temperature energy harvesting, primarily driven by the high abundance of their atomic elements, ease of processing/manufacturing, and intrinsically low thermal conductivity. This quest for new materials has resulted in the discovery of several new kinds of thermoelectric materials and concepts capable of converting a heat flux into an electrical current by means of various types of particles transporting the electric charge: (i) electrons, (ii) ions, and (iii) redox molecules. This has contributed to expanding the applications envisaged for thermoelectric materials far beyond simple conversion of heat into electricity. This is the motivation behind this review. This work is divided in three sections. In the first section, we present the basic principle of the thermoelectric effects when the particles transporting the electric charge are electrons, ions, and redox molecules and describe the conceptual differences between the three thermodiffusion phenomena. In the second section, we review the efforts made on developing devices exploiting these three effects and give a thorough understanding of what limits their performance. In the third section, we review the state-of-the-art thermoelectric materials investigated so far and provide a comprehensive understanding of what limits charge and energy transport in each of these classes of materials.

Crystalline Domain Formation to Enable High-Performance Polymer Thermoelectrics Inspired by Thermocleavable Materials

Improving the electrical conductivity is an important role in realizing high thermoelectric performance of solution-processable polymers. Herein, a simple and robust approach to boost the mobility and doping efficiency of a diketopyrrolopyrrole-based copolymer with the introduction of thermocleavable side chains (PDPPS-X, where X is the molar ratio of the thermocleavable side chains and alkyl chains) is first provided. Notably, the incorporated thermocleavable groups can be effectively removed after thermal treatment and therefore contribute to the crystalline domain formation via hydrogen-bonded networks, which is critical for conductivity enhancements. Grazing incidence wide-angle X-ray scattering (GIWAXS) patterns give a clear indication that the thermal treatment of PDPPS-5 can greatly improve the structural arrangement, resulting in a significantly enhanced hole mobility (5.4 times that of PDPPS-0 without thermocleavable chains). Compared to PDPPS-0, a larger Fermi level shift is observed after doping PDPPS-5 with FeCl₃, reflecting a better doping efficiency. Consequently, remarkably improved conductivity and power factor are achieved by PDPPS-5 after doping with 0.03 M FeCl₃ at room temperature, which are about 2.2 and 3.5 times higher than that of PDPPS-0 at the same testing condition, respectively. Moreover, PDPPS-5 achieved a maximum power factor of 57.5 μW m^-1 K^-2 at 404 K.

Highly Efficient Doping of Conjugated Polymers Using Multielectron Acceptor Salts

Chemical doping is a vital tool for tuning electronic properties of conjugated polymers. Most single electron acceptors used for p-doping necessitate high dopant concentrations to achieve good electrical conductivity. However, high-molar doping ratios hamper doping efficiency. Here a new concept of using multielectron acceptor (MEA) salts as dopants for conjugated polymers is presented. Two novel MEA salts are synthesized and their doping efficiency towards two polymers differing in their dielectric properties are compared with two single electron acceptors such as NOPF₆ and magic blue. Cutting-edge methods such as ultraviolet photoelectron spectroscopy/X-ray photoelectron spectroscopy (XPS), impedance spectroscopy, and density of states analysis in addition to UV-vis-NIR absorption, spectroelectrochemistry, and Raman spectroscopy methods are used to characterize the doped systems. The tetracation salt improves the conductivity by two orders of magnitude and quadruples the charge carrier concentration compared to single electron acceptors for the same molar ratio. The differences in charge carrier density and activation energy on doping are delineated. Further, a strong dependency of the carrier release on the polymer polarity is observed. High carrier densities at reduced dopant loadings and improved doping efficacies using MEA dopants offer a highly efficient doping strategy for conjugated polymers.

Approaching disorder-tolerant semiconducting polymers

Doping has been widely used to control the charge carrier concentration in organic semiconductors. However, in conjugated polymers, n-doping is often limited by the tradeoff between doping efficiency and charge carrier mobilities, since dopants often randomly distribute within polymers, leading to significant structural and energetic disorder. Here, we screen a large number of polymer building block combinations and explore the possibility of designing n-type conjugated polymers with good tolerance to dopant-induced disorder. We show that a carefully designed conjugated polymer with a single dominant planar backbone conformation, high torsional barrier at each dihedral angle, and zigzag backbone curvature is highly dopable and can tolerate dopant-induced disorder. With these features, the designed diketopyrrolopyrrole (DPP)-based polymer can be efficiently n-doped and exhibit high n-type electrical conductivities over 120 S cm⁻¹, much higher than the reference polymers with similar chemical structures. This work provides a polymer design concept for highly dopable and highly conductive polymeric semiconductors.

In conjugated polymers, n-doping is often limited by the tradeoff between doping efficiency and charge carrier mobilities, since dopants often randomly distribute within polymers, leading to significant structural and energetic disorder. Here, the authors screen a large number of polymer building block combinations and explore the possibility of designing n-type conjugated polymers with good tolerance to dopant-induced disorder.