Tailoring Magnetoelectric Coupling in BiFeO3 /La0.7 Sr0.3 MnO3 Heterostructure through the Interface Engineering

Manipulating chiral spin transport with ferroelectric polarization

A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO3, an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials

Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.

Magneto-Electric-Optical Coupling in Multiferroic BiFeO3 -Based Films

Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO₃ -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO₃ -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.

Atomic scale insights on the growth of BiFeO3 nanoparticles

This study provides new insights on the formation of the nanocrystallites of phase pure BiFeO3 prepared using sol-gel method with tartaric acid as the fuel as comprehended based on the local structure and magnetic hyperfine fields at Fe sites using Mossbauer spectroscopy. Important steps involved in the growth of the nanocrystallites of BiFeO3 in the sol-gel reaction are elucidated in a detailed manner in this study for the first time. Three important stages with the second stage marked by the formation of as high as 75% of nanocrystallites of BiFeO3 occurring over a narrow calcination temperature interval 700-723 K have been deduced in this study. Variation of hyperfine parameters with calcination temperature of the dried precursor gel leading to an increase in the mean size of crystallites of BiFeO3 has been deduced. The nanoparticles of BiFeO3 are deduced to exhibit weak ferromagnetic property in addition to being strongly ferroelectric based on the magnetization and P-E loop studies. Consequently an appreciable magneto electric coupling effect in terms of significant changes in P-E loop variation with the application of external magnetic field is elucidated in this study, which is comprehended based on the defects associated with BiFeO3 nanoparticles.

Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial La0.7Sr0.3MnO3(111) Thin Films

La_0.7Sr_0.3MnO₃ (LSMO) is one of the most fascinating strongly correlated oxides in which the spin polarization and magnetic property are sensitive to strain, especially in the (111)-oriented LSMO. In the paper, epitaxial LSMO(111) thin films with different thicknesses were prepared, and they showed continuous dislocation defect arrays with thickness greater than 45 nm. Then, the thick LSMO(111) films were divided into a double-layer structure with two slightly different oriented cells. The LSMO(111) films present a stronger lattice-spin coupling, thus the double-layer structure triggers an obvious magnetic heterogeneity phenomenon (magnetic bi-states) by the way of creating a double-mode ferromagnetic resonance (FMR) spectrum. Therefore, the nanostructures, especially the ordered structure defects, may trigger enriched physical phenomena and offer new forms of spin coupling and device functionality in strain-sensitive strongly correlated oxide systems.

Long decay length of magnon-polarons in BiFeO3/La0.67Sr0.33MnO3 heterostructures

Magnons can transfer information in metals and insulators without Joule heating, and therefore are promising for low-power computation. The on-chip magnonics however suffers from high losses due to limited magnon decay length. In metallic thin films, it is typically on the tens of micrometre length scale. Here, we demonstrate an ultra-long magnon decay length of up to one millimetre in multiferroic/ferromagnetic BiFeO₃(BFO)/La_0.67Sr_0.33MnO₃(LSMO) heterostructures at room temperature. This decay length is attributed to a magnon-phonon hybridization and is more than two orders of magnitude longer than that of bare metallic LSMO. The long-distance modes have high group velocities of 2.5 km s^-1 as detected by time-resolved Brillouin light scattering. Numerical simulations suggest that magnetoelastic coupling via the BFO/LSMO interface hybridizes phonons in BFO with magnons in LSMO to form magnon-polarons. Our results provide a solution to the long-standing issue on magnon decay lengths in metallic magnets and advance the bourgeoning field of hybrid magnonics.

Controllable Distribution and Reversible Migration of Charges in BiFeO3-Based Films on Si Substrates

In ferroelectric-based integrated devices, there are usually buffer layers between ferroelectric films and semiconductor substrates. Here, Bi_x%FeO_3-δ (x = 95, 100, and 105) (BFOx) films are prepared directly on n-Si substrates by the sol-gel method, and the variation of the hysteresis loops with Bi content and heat treatment is investigated. With the help of the dielectric measurement and the composition analysis, a PN heterojunction is believed to exist at the BFOx/Si interface. The Bi/Fe ratio determines not only the type and concentration of charged defects in the films but also the height of the interface barrier and its binding effect on mobile charges. Furthermore, the distribution and the migration of charges can be regulated reversibly by heat treatment. This work reveals the interaction between ferroelectric films and semiconductor substrates, providing an important reference for the design and application of ferroelectric/semiconductor heterostructures.

Voltage-Controlled Reconfigurable Magnonic Crystal at the Sub-micrometer Scale

Multiferroics offer an elegant means to implement voltage control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nanomagnonics is expected to eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic BiFeO₃ with a periodicity of 500 nm yields a modulation of the effective magnetic field in the micrometer-scale, ferromagnetic La_2/3Sr_1/3MnO₃ magnonic waveguide. We evidence the magnetoelectric coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic band gap with >20 dB rejection.

Hydrogen Control of Double Exchange Interaction in La0.67 Sr0.33 MnO3 for Ionic-Electric-Magnetic Coupled Applications

The dynamic tuning of ion concentrations has attracted significant attention for creating versatile functionalities of materials, which are impossible to reach using classical control knobs. Despite these merits, the following fundamental questions remain: how do ions affect the electronic bandstructure, and how do ions simultaneously change the electrical and magnetic properties? Here, by annealing platinum-dotted La_0.67 Sr_0.33 MnO₃ films in hydrogen and argon at a lower temperature of 200 °C for several minutes, a reversible change in resistivity is achieved by three orders of magnitude with tailored ferromagnetic magnetization. The transition occurs through the tuning of the double exchange interaction, ascribed to an electron-doping-induced and/or a lattice-expansion-induced modulation, along with an increase in the hydrogen concentration. High reproducibility, long-term stability, and multilevel linearity are appealing for ionic-electric-magnetic coupled applications.

Interface-engineered electron and hole tunneling

Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave nature of electrons. This picture of electron tunneling fails, however, for tunnel junctions, where the Fermi energy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates. We demonstrate the deterministic control of electron and hole tunneling in interface-engineered Pt/BaTiO₃/La_0.7Sr_0.3MnO₃ ferroelectric tunnel junctions by reversal of tunneling electroresistance. Our electrical measurements, electron microscopy and spectroscopy characterization, and theoretical modeling unambiguously point out to electron or hole tunneling regimes depending on interface termination. The interface control of the tunneling regime offers designed functionalities of electronic devices.

Multiferroic heterostructures for spintronics

For next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.

Magnetoelectric Composites: Applications, Coupling Mechanisms, and Future Directions

Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed. Ways to enhance the ME coupling and other physical properties are also demonstrated. Finally, emphasis is given to the important open questions and future directions in this field, where new breakthroughs could have a significant impact in transforming scientific discoveries to practical device applications, which can be well-controlled both magnetically and electrically.

Magnon-tuning non-volatile magnetic dynamics in a CoZr/PMN-PT structure

Magnon-tuning non-volatile magnetic dynamics is investigated in a CoZr/PMN-PT structure by measuring ferromagnetic resonance at room temperature. The electric-field control of ferromagnetic resonance shows loop-like behavior, which indicates non-volatile electric-field control of the magnetism. Further, fitting the curves of in-plane rotating angle versus ferromagnetic resonance field under different electric fields shows that the effective magnetic field changes in loop-like manner with the electric field. The resulting change in non-volatile saturation magnetization with electric field is consistent with that of a polarization electric field curve. A 1.04% change of saturation magnetization is obtained, which can be attributed to a magnon-driven magnetoelectric coupling at the CoZr/PMN-PT interface. This magnon-driven magnetoelectric coupling and its dynamic magnetic properties are significant for developing future magnetoelectric devices.

Enhancement of charge-mediated magnetoelectric coupling in Fe3O4/SrTiO3/Ba0.6Sr0.4TiO3 heterostructure

The in-plane magnetic hysteresis loops of Fe₃O₄/SrTiO₃(STO) and Fe₃O₄/STO/Ba_0.6Sr_0.4TiO₃(BSTO) heterostructures have been investigated at 200 K under various electric fields. The bottom BSTO layer of the STO/BSTO bilayer is used to improve the dielectric properties of the top STO layer. The polarization of the STO/BSTO bilayer is ∼78% larger than that of the STO layer at room temperature due to the improvement of surface topography and the contribution of electrostatic interlayer coupling. A significant enlargement (∼70%) in the magnetoelectric response of Fe₃O₄/STO/BSTO heterostructure has been achieved at 200 K and 300 kV cm^-1 after introducing the BSTO layer, since the STO/BSTO bilayer with larger dielectric constant supplies more polarization charges at its interface to the Fe₃O₄ layer than the STO layer. It indicates that the dielectric bilayer improves the polarization and thus benefits the magnetoelectric coupling in the multiferroic heterostructure.

Magnon-driven interfacial magnetoelectric coupling in Co/PMN-PT multiferroic heterostructures

Magnon-driven interfacial magnetoelectric coupling in Co/PMN-PT multiferroic heterostructures is investigated at room temperature. The electric field controlled ferromagnetic resonance field possesses a loop-like curve, with a large resonance field shift between positive and negative remanent polarizations, which confirms a non-volatile strong magnetoelectric coupling. However, with a non-magnetic Ta layer inserted at the Co/PMN-PT interface, a piezostrain-induced butterfly-like curve of the resonance field versus applied electric field of the Co/Ta/PMN-PT multiferroic heterostructure is observed. Further, the non-volatile behavior of the resonance field changing with the applied electric field can be obtained, consistent with the result of polarization versus applied electric field curve, which can be attributed to the magnon-driven interfacial magnetoelectric coupling, showing a strong correlation of magnetization of Co thin film and the polarization of PMN-PT. The result is promising for the design of future multiferroic devices.