Designed Growth of Large-Size 2D Single Crystals

Emerging 2D materials hardware for in-sensor computing

The advent of the novel in-sensor/near-sensor computing paradigm significantly eliminates the need for frequent data transfer between sensory terminals and processing units by integrating sensing and computing functions into a single device. This approach surpasses the traditional configuration of separate sensing and processing units, thereby greatly simplifying system complexity. Two-dimensional materials (2DMs) show immense promise for implementing in-sensor computing systems owing to their exceptional material properties and the flexibility they offer in designing innovative device architectures with heterostructures. This review highlights recent progress and advancements in 2DM-based in-sensor computing research, summarizing the unique physical mechanisms that can be leveraged in 2DM-based devices to achieve sensory responses and the essential biomimetic synaptic characteristics for computing functions. Additionally, the potential applications of 2DM-based in-sensor computing systems are discussed and categorized. This review concludes with a perspective on future development directions for 2DM-based in-sensor computing.

Van der Waals epitaxial growth of single-crystal molecular film

Epitaxy is the cornerstone of semiconductor technology, enabling the fabrication of single-crystal film. Recent advancements in van der Waals (vdW) epitaxy have opened new avenues for producing wafer-scale single-crystal 2D atomic crystals. However, when it comes to molecular crystals, the overall weak vdW force means that it is a significant challenge for small molecules to form a well-ordered structure during epitaxy. Here we demonstrate that the vdW epitaxy of Sb2O3 molecular crystal, where the whole growth process is governed by vdW interactions, can be precisely controlled. The nucleation is deterministically modulated by epilayer-substrate interactions and unidirectional nuclei are realized through designing the lattice and symmetry matching between epilayer and substrate. Moreover, the growth and coalescence of nuclei as well as the layer-by-layer growth mode are kinetically realized via tackling the Schwoebel-Ehrlich barrier. Such precise control of vdW epitaxy enables the growth of single-crystal Sb2O3 molecular film with desirable thickness. Using the ultrathin highly oriented Sb2O3 film as a gate dielectric, we fabricated MoS2-based field-effect transistors that exhibit superior device performance. The results substantiate the viability of precisely managing molecule alignment in vdW epitaxy, paving the way for large-scale synthesis of single-crystal 2D molecular crystals.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

FePd2Te2: An Anisotropic Two-Dimensional Ferromagnet with One-Dimensional Fe Chains

Two-dimensional (2D) magnets have attracted significant attention in recent years due to their importance in the research on both fundamental physics and spintronic applications. Here, we report the discovery of a new ternary compound FePd2Te2. It features a layered quasi-2D crystal structure with 1D Fe zigzag chains extending along the b-axis in the cleavage plane. Single crystals of FePd2Te2 with centimeter size could be grown. Density functional theory calculations, mechanical exfoliation, and atomic force microscopy on these crystals reveal that they are 2D materials that can be thinned down to ∼5 nm. Magnetic characterization shows that FePd2Te2 is an easy-plane ferromagnet with TC ∼ 183 K and strong in-plane uniaxial magnetic anisotropy. Magnetoresistance and the anomalous Hall effect demonstrate that ferromagnetism could be maintained in FePd2Te2 flakes with large coercivity. A crystal twinning effect is observed by scanning tunneling microscopy which makes the Fe chains right angle bent in the cleavage plane and creates an intriguing spin texture. Besides, a large electronic specific heat coefficient of up to γ ∼ 32.4 mJ mol-1 K-2 suggests FePd2Te2 is a strongly correlated metal. Our results show that FePd2Te2 is a correlated anisotropic 2D magnet that may attract multidisciplinary research interests.

Understanding epitaxial growth of two-dimensional materials and their homostructures

The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.

Room-Temperature Growth of Square-Millimeter Single-Crystalline Two-Dimensional Metal Halides on Silicon

Silicon is the cornerstone of electronics and photonics. In this context, almost all integrated devices derived from two-dimensional (2D) materials stay rooted in silicon technology. However, as the growth substrate, silicon has long been thought to be a hindrance for growing 2D materials through bottom-up methods that require high growth temperatures, and thus, indirect routes are usually considered instead. Although promising growth of large-area 2D materials on silicon has been demonstrated, the direct growth of single-crystalline materials using low-thermal-budget synthesis methods remains challenging. Here, we report the room-temperature growth of millimeter-scale single-crystal 2D metal halides on silicon substrates with a hydroxyl-terminated surface. Theoretical calculations reveal that the activation energy for surface diffusion can be reduced by an order of magnitude by terminating the surface with hydroxyl groups, from which on-silicon growth is greatly facilitated at room temperature and enables a 4-order-of-magnitude increase in area. The high quality and uniformity of the resulting single crystals are further evidenced. The optoelectronic devices employing the as-grown materials show an ultralow dark current of 10-13 A and a high detectivity of 1013 Jones, thereby corroborating a weak-light detection ability. These results would point to a rich space of surface modulation that can be used to surmount current limitations and demonstrate a promising strategy for growing 2D materials directly on silicon at room temperature to produce large single crystals.

Ion adsorption promotes Frank-van der Merwe growth of 2D transition metal tellurides

Reliable synthesis methods for high-quality, large-sized, and uniform two-dimensional (2D) transition-metal dichalcogenides (TMDs) are crucial for their device applications. However, versatile approaches to growing high-quality, large-sized, and uniform 2D transition-metal tellurides are rare. Here, we demonstrate an ion adsorption strategy that facilitates the Frank-van der Merwe growth of 2D transition-metal tellurides. By employing this method, we grow MoTe2 and WTe2 with enhanced lateral size, reduced thickness, and improved uniformity. Comprehensive characterizations confirm the high quality of as-grown MoTe2. Moreover, various characterizations verify the adsorption of K+ and Cl- ions on the top surface of MoTe2. X-ray photoelectron spectroscopy (XPS) analysis reveals that the MoTe2 is stoichiometric without K+ and Cl- ions and exhibits no discernable oxidation after washing. This top surface control strategy provides a new controlling knob to optimize the growth of 2D transition-metal tellurides and holds the potential for generalized to other 2D materials.

Emerging van der Waals Dielectrics of Inorganic Molecular Crystals for 2D Electronics

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising channel materials for ultimate scaled devices. However, integrating compatible dielectrics with 2D semiconductors, particularly in a scalable way, remains a critical challenge that hinders the development of 2D devices. Recently, 2D inorganic molecular crystals (IMCs), which are free of dangling bonds and possess excellent dielectric properties and simplicity for scalable fabrication, have emerged as alternatives for gate dielectric integration in 2D devices. In this Perspective, we start with the introduction of structure and synthesis methods of IMCs and then discuss the explorations of using IMCs as the dielectrics, as well as some remaining relevant issues to be unraveled. Moreover, we look at the future opportunities of IMC dielectrics in 2D devices both for practical applications and fundamental research.

The van der Waals interaction and absorption and electron circular dichroism spectra of two-dimensional bilayer stacked structures

van der Waals (vdW) heterojunctions based on two-dimensional (2D) materials, graphene and transition metal dichalcogenides (TMDs), are a research hotspot for future optoelectronic and exciton devices. Bond-free vdW interactions are key to 2D material heterojunction device reliability and stability. However, most of the current research on 2D stacked materials heterostructures mainly focuses on optical properties and electronic structure. Furthermore, vdW interaction in 2D heterostructures is studied and understood on the basis of qualitative description and energy ranges from the literature. There are few studies on the nature of vdW interaction based on practical calculations of the quantitative strength and microscopic mechanism of vdW interaction between 2D stacked materials. Therefore, this paper explores the vdW interaction between 2D material stacked bilayer structures, including bilayer graphene, graphene/MoS2 and graphene/WS2 heterostructures, focusing on quantitative analysis of the energy components of the vdW interaction. We first visually observed the weak interactions in the three stacked bilayer structures through noncovalent interaction (NCI) analysis, and found that the interactions are concentrated in the binding region between the two-layer structures. We mainly decomposed the weak interaction energy in the three 2D material bilayer heterostructures through energy decomposition analysis based on the force field (EDA-FF) method and obtained the energy values and proportions of the three components-electrostatic energy, exchange repulsion energy and dispersion energy of the total binding energy between the 2D stacked bilayer structures. The vdW interaction energy is the sum of the exchange repulsion energy and dispersion energy, and the dispersion energy of the vdW interaction accounts for more than 60% of the binding energy of the weak interaction between the 2D bilayer stacked structures. The vdW strengths in the bilayer structures are on the order of 177.07, 123.85, and 133.93 kJ/mol, approxmately 1-2 orders of magnitude larger than the classically defined vdW energies of 0.1-10 kJ/mol. Furthermore, we calculate the density of states of the three 2D stacked structures, and further obtained HOMO-LOMO information; to further understand the electronic structures of the graphene/MoS2 and graphene/WS2 heterostructures, we calculated their optical absorption spectra and electron circular dichroism (ECD) spectra. According to the calculation results, the two heterostructures have strong absorption peaks in the visible region, and the charge transfer forms at the strong absorption peak can be determined according to the charge transfer diagram. The ECD spectra indicate that the configurations of the graphene/MoS2 and graphene/WS2 heterostructures have large chirality. Our work contributes to a deeper understanding of the nature of the weak interactions and optical properties in 2D stacked materials, which plays a fundamental role in promoting the construction of stable 2D heterostructure configurations and the development of multifunctional 2D devices. The research is conducive to further promoting the basic research and practical development of strong optoelectronic and excitonic 2D heterojunctions devices.

Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides

2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

Study of the Cu(111) Surface by Scanning Tunneling Microscopy: The Morphology Evolution, Reconstructions, Superstructures and Line Defects

The Cu(111) surface is an important substrate for catalysis and the growth of 2D materials, but a comprehensive understanding of the preparation and formation of well-ordered and atomically clean Cu(111) surfaces is still lacking. In this work, the morphology and structure changes of the Cu(111) surface after treatment by ion bombardment and annealing with a temperature range of 300-720 °C are investigated systematically by using in situ low-temperature scanning tunneling microscopy. With the increase of annealing temperature, the surface morphology changes from corrugation to straight edge, the number of screw dislocations changes from none to numerous, and the surface atomic structure changes from disordered to ordered structures (with many reconstructions). In addition, the changing trend of step width and step height in different stages is different (first increased and then decreased). A perfect Cu(111) surface with a step height of one atom layer (0.21 nm) and a width of more than 150 nm was obtained. In addition, two interesting superstructures and a new surface phase with a large number of line defects were found. This work serves as a strong foundation for understanding the properties of Cu(111) surface, and it also provides important guidance for the effective pretreatment of Cu(111) substrates, which are widely used.

Designed growth of large bilayer graphene with arbitrary twist angles

The production of large-area twisted bilayer graphene (TBG) with controllable angles is a prerequisite for proceeding with its massive applications. However, most of the prevailing strategies to fabricate twisted bilayers face great challenges, where the transfer methods are easily stuck by interfacial contamination, and direct growth methods lack the flexibility in twist-angle design. Here we develop an effective strategy to grow centimetre-scale TBG with arbitrary twist angles (accuracy, <1.0°). The success in accurate angle control is realized by an angle replication from two prerotated single-crystal Cu(111) foils to form a Cu/TBG/Cu sandwich structure, from which the TBG can be isolated by a custom-developed equipotential surface etching process. The accuracy and consistency of the twist angles are unambiguously illustrated by comprehensive characterization techniques, namely, optical spectroscopy, electron microscopy, photoemission spectroscopy and photocurrent spectroscopy. Our work opens an accessible avenue for the designed growth of large-scale two-dimensional twisted bilayers and thus lays the material foundation for the future applications of twistronics at the integration level.

Nanomechanical Resonators: Toward Atomic Scale

The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization─genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines.

Tunable Structured MXenes With Modulated Atomic Environments: A Powerful New Platform for Electrocatalytic Energy Conversion

Owing to their rich surface chemistry, high conductivity, tunable bandgap, and thermal stability, structured 2D transition-metal carbides, nitrides, and carbonitrides (MXenes) with modulated atomic environments have emerged as efficient electrochemical energy conversion systems in the past decade. Herein, the most recent advances in the engineering of tunable structured MXenes as a powerful new platform for electrocatalytic energy conversion are comprehensively summarized. First, the state-of-the-art synthetic and processing methods, tunable nanostructures, electronic properties, and modulation principles of engineering MXene-derived nanoarchitectures are focused on. The current breakthroughs in the design of catalytic centers, atomic environments, and the corresponding structure-performance correlations, including termination engineering, heteroatom doping, defect engineering, heterojunctions, and alloying, are discussed. Furthermore, representative electrocatalytic applications of structured MXenes in energy conversion systems are also summarized. Finally, the challenges in and prospects for constructing MXene-based electrocatalytic materials are also discussed. This review provides a leading-edge understanding of the engineering of various MXene-based electrocatalysts and offers theoretical and experimental guidance for prospective studies, thereby promoting the practical applications of tunable structured MXenes in electrocatalytic energy conversion systems.

The Intrinsic Thermodynamic Difficulty and a Step-Guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS2 with Controllable Thickness

Multilayer MoS₂ shows superior performance over the monolayer MoS₂ for electronic devices while the growth of multilayer MoS₂ with controllable and uniform thickness is still very challenging. It is revealed by calculations that monolayer MoS₂ domains are thermodynamically much more favorable than multilayer ones on epitaxial substrates due to the competition between surface interactions and edge formation, leading accordingly to a layer-by-layer growth pattern and non-continuously distributed multilayer domains with uncontrollable thickness uniformity. The thermodynamics model also suggests that multilayer MoS₂ domains with aligned edges can significantly reduce their free energy and represent a local minimum with very prominent energy advantage on a potential energy surface. However, the nucleation probability of multilayer MoS₂ domains with aligned edges is, if not impossible, extremely rare on flat substrates. Herein, a step-guided mechanism for the growth of uniform multilayer MoS₂ on an epitaxial substrate is theoretically proposed. The steps with proper height on sapphire surface are able to guide the simultaneous nucleation of multilayer MoS₂ with aligned edges and uniform thickness, and promote the continuous growth of multilayer MoS₂ films. The proposed mechanism can be reasonably extended to grow multilayer 2D materials with uniform thickness on epitaxial substrates.

Study on SO2 and Cl2 sensor application of 2D PbSe based on first principles calculations

In this paper, we use 2D PbSe to design a gas sensor to monitor the presence of SO2 and Cl2. We use first principles to verify the feasibility of this material, such as atomic structure, band gap, differential charge density and Bader charge. The results show that 2D PbSe can distinctly adsorb SO2 and Cl2. Furthermore, the adsorption of SO2 and Cl2 will affect the electronic structure of 2D PbSe, and some electrons in the PbSe are transferred to gas atoms. The band gap of the system after adsorption is smaller than that of the PbSe before adsorption. The band gap of single layer PbSe decreases by 41.92% after SO2 adsorption and 60.61% after Cl2 adsorption. The band gap of multi-layer PbSe decreases by 72.97% after SO2 adsorption and 43.24% after Cl2 adsorption. This shows that single layer PbSe is more sensitive to Cl2 and multi-layer PbSe is more sensitive to SO2. It provides a potential possibility for designing gas sensors for SO2 and Cl2 based on 2D PbSe.

Optical Properties of Few-Layer Ti3CN MXene: From Experimental Observations to Theoretical Calculations

Despite the emerging interest in research and development of Ti₃CN MXene nanosheet (NS)-based optoelectronic devices, there is still a lack of in-depth studies of the underlying photophysical processes, like carrier relaxation dynamics and nonlinear photon absorption, operating in such devices, hindering their further and precise design. In this paper, we attempt to remedy the situation by fabricating few-layer Ti₃CN NSs via combining selective etching and molecular intercalation and by investigating the carrier relaxation possesses and broadband nonlinear optical responses via transient absorption and Z-scan techniques. These results are complemented by first-principle theoretical analyses of the optical properties. Both saturable absorption and reverse saturable absorption phenomena are observed due to multiphoton absorption effects. The analysis of these results adds to the understanding of the basic photophysical processes, which is anticipated to be beneficial for the further design of MXene-based devices.

Ammonium Salts: New Synergistic Additive for Chemical Vapor Deposition Growth of MoS2

Controllable and scalable fabrication is the precondition for realizing the large number of superior electronic and catalytic applications of MoS₂. Here, we report a new type of synergistic additives, ammonium salts, for chemical vapor deposition (CVD) growth of MoS₂. On the basis of the catalysis of ammonium salts, we can achieve layer and shape-controlled MoS₂ domains and centimeter-scale MoS₂ films. Compared to frequently used alkali metal ions as the catalysts, ammonium salts are decomposed completely at low temperature (below 513 °C), resulting in clean and nondestructive as-grown substrates. Thus, MoS₂ electronic devices can be directly fabricated on them, and the redundant transfer step is no longer needed. This method can also promote the direct growth of MoS₂ on the conductive substrate and boost the improvement of hydrogen evolution reaction (HER) performance. The ammonium salt-mediated CVD method will pave a new way for MoS₂ toward real applications in modern electronics and catalysis.

Continuous orientated growth of scaled single-crystal 2D monolayer films

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

A minireview on chemical vapor deposition growth of wafer-scale monolayer h-BN single crystals

Hexagonal boron nitride (h-BN), with its excellent stability, flat surface, and large bandgap, plays a role in a variety of fundamental science and technology fields. The past few years have witnessed significant development in the scaled growth of h-BN single crystals. Currently, the size of h-BN crystal can be reached up to wafer-scale, paving the way towards industrial production and commercial applications. In this minireview, recent academic breakthroughs regarding the controlled growth of large-sized h-BN single crystals via chemical vapor deposition (CVD) are presented. The as-developed technique in terms of growth parameters, choice of catalysts, and the mechanism is fully emphasized, offering a guideline in enhancing the size and quality of h-BN. Several typical metal catalysts have been used in shaping scaled h-BN single crystals, of which the metal Cu substrate has drawn the most intensive attention. The significant advances in expanding the size of h-BN single crystals will largely push forward the way to h-BN industrialization and commercialization. The past few years have witnessed significant development in the scaled growth of h-BN single crystals. Currently, the size of h-BN crystal can be reached up to wafer-scale, paving the way towards industrial production and commercial applications. In this minireview, recent academic breakthroughs regarding controlled growth of large-sized h-BN single crystals via chemical vapor deposition (CVD) are present. The as-developed technique in terms of growth parameters, choice of catalysts and mechanism is fully emphasized, offering a guideline in enhancing size and quality of h-BN. Several typical metal catalysts are exhibited in shaping scaled h-BN single crystals, of which the metal Cu substrate has drawn the most intensive attentions.

Room-Temperature Ferroelectricity in 2D Metal-Tellurium-Oxyhalide Cd7Te7Cl8O17 via Selenium-Induced Selective-Bonding Growth

Two-dimensional (2D) ferroelectric materials have attracted increasing interest due to meeting the requirements of integration, miniaturization, and multifunction of devices. However, the exploration of intrinsic 2D ferroelectric materials is still in the early stage, for which the related reports are still limited, especially fewer ones prepared by chemical vapor deposition (CVD). Here, the ultrathin metal-tellurium-oxyhalide Cd₇Te₇Cl₈O₁₇ (CTCO) flakes as thin as 3.8 nm are realized via the selenium-induced selective-bonding CVD method. The growth mechanism has been confirmed by experiments and theoretical calculations, which can be ascribed to the induction of selective bonding of a hydrogen atom in H₂O molecules by the introduction of selenium, leading to the generation of strong oxidants. Excitingly, switchable out-of-plane ferroelectric polarization was observed in CTCO flakes down to 6 nm at room temperature, which may be caused by mobile Cl vacancies. This work has implications for the synthesis and applications of 2D ferroelectric materials.

Broad background in electron diffraction of 2D materials as a signature of their superior quality

An unusually broad bell-shaped component (BSC) has been previously observed in surface electron diffraction on different types of 2D systems. It was suggested to be an indicator of uniformity of epitaxial graphene (Gr) and hexagonal boron nitride (hBN). In the current study we use low-energy electron microscopy and micro-diffraction to directly relate the BSC to the crystal quality of the diffracting 2D material. Specially designed lateral heterostructures were used to map the spatial evolution of the diffraction profile across different 2D materials, namely pure hBN, BCN alloy and pure Gr, where the alloy region exhibits deteriorated structural coherency. The presented results show that the BSC intensity has a minimum in the alloyed region, consequently showing that BSC is sensitive to the lateral domain size and homogeneity of the material under examination. This is further confirmed by the presence of a larger number of sharp moiré spots when the BSC is most pronounced in the pure hBN and Gr regions. Consequently, it is proposed that the BSC can be used as a diagnostic tool for determining the quality of the 2D materials.

Phase-Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere

Phase controllable synthesis of 2D materials is of significance for tuning related electrical, optical, and magnetic properties. Herein, the phase-controllable synthesis of tetragonal and hexagonal FeTe nanoplates has been realized by a rational control of the Fe/Te ratio in a chemical vapor deposition system. Using density functional theory calculations, it has been revealed that with the change of the Fe/Te ratio, the formation energy of active clusters changes, causing the phase-controllable synthesis of FeTe nanoplates. The thickness of the obtained FeTe nanoplates can be tuned down to the 2D limit (2.8 nm for tetragonal and 1.4 nm for hexagonal FeTe). X-ray diffraction pattern, transmission electron microscopy, and high resolution scanning transmission electron microscope analyses exhibit the high crystallinity of the as-grown FeTe nanoplates. The two kinds of FeTe nanoflakes show metallic behavior and good electrical conductivity, featuring 8.44 × 10⁴ S m^-1 for 9.8 nm-thick tetragonal FeTe and 5.45 × 10⁴ S m^-1 for 7.6 nm-thick hexagonal FeTe. The study provides an efficient and convenient route for tailoring the phases of FeTe nanoplates, which benefits to study phase-sensitive properties, and may pave the way for the synthesis of other multiphase 2D nanosheets with controllable phases.

Recent progress on pristine two-dimensional metal-organic frameworks as active components in supercapacitors

Two-dimensional (2D) metal-organic frameworks (MOFs) are a new generation of 2D materials that can provide uniform active sites and unique open channels as well as excellent catalytic abilities, interesting magnetic properties, and reasonable electrical conductivities. Thus, these MOFs are uniquely qualified for use in applications in energy-related fields or portable devices because they possess fast charge and discharge ability, high power density, and ultralong cycle life factors. There has been worldwide research interest in 2D conducting MOFs, and numerous techniques and strategies have been developed to synthesize these MOFs and their derivatives. Thus, this is the opportune time to review recent research progress on the development of 2D MOFs as electrodes in supercapacitors. This review covers synthetic design strategies, electrochemical performances, and working mechanisms. We will divide these 2D MOFs into two types on the basis of their conductive aspects: 2D conductive MOFs and 2D layered MOFs (including pillar-layered MOFs and 2D nanosheets). The challenges and perspectives of 2D MOFs are also provided.

Controlled growth of 2D ultrathin Ga2O3 crystals on liquid metal

2D metal oxides (2DMOs) have drawn intensive interest in the past few years owing to their rich surface chemistry and unique electronic structures. Striving for large-scale and high-quality novel 2DMOs is of great significance for developing future nano-enabled technologies. In this work, we demonstrate for the first time controllable growth of highly crystalline 2D ultrathin Ga2O3 single crystals on liquid Ga by the chemical vapor deposition approach. With the introduction of oxygen into the growth process, large-area hexagonal α-Ga2O3 crystals with a uniform size distribution have been produced. At high temperature, fast diffusion of oxygen atoms onto the liquid surface facilitates reaction with Ga and thus leads to in situ formation of 2D ultrathin crystals. By precisely controlling the amount of oxygen, the vertical growth of the Ga2O3 single crystal has been realized. Furthermore, phase engineering can be achieved and thus 2D β-Ga2O3 crystals were also prepared by precisely tuning the growth temperature. The controlled growth of 2D Ga2O3 crystals offers an applicable avenue for fabrication of other 2D metal oxides and can further open up possibilities for future electronics.

Halogen Functionalization in the 2D Material Flatland: Strategies, Properties, and Applications

Given the electronegativity and bonding environment of halogen elements, halogenation (i.e., fluorination, chlorination, bromination, and iodination) serves as a versatile strategy for chemical modifications of materials. The combination of halogens and 2D materials has triggered extensive interests since the first report on graphene fluorination in 2008. Subsequently, scholars consistently conduct pre-, in-process, or posthalogenation modifications of emerging 2D materials to achieve desired properties and broad device applications. They also continuously explore the role of halogens in 2D material functionalization. The multiple advantages introduced by halogen decoration make 2D materials outstanding from each subclass. In this review, an overall retrospect is provided on the research advances in the area of 2D material halogenation, including experimental halogenation strategies, halogen-triggered novel physics and properties, and advanced applications across the studied objects. Future research directions in this area are also proposed.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Silica optical fiber integrated with two-dimensional materials: towards opto-electro-mechanical technology

In recent years, the integration of graphene and related two-dimensional (2D) materials in optical fibers have stimulated significant advances in all-fiber photonics and optoelectronics. The conventional passive silica fiber devices with 2D materials are empowered for enhancing light-matter interactions and are applied for manipulating light beams in respect of their polarization, phase, intensity and frequency, and even realizing the active photo-electric conversion and electro-optic modulation, which paves a new route to the integrated multifunctional all-fiber optoelectronic system. This article reviews the fast-progress field of hybrid 2D-materials-optical-fiber for the opto-electro-mechanical devices. The challenges and opportunities in this field for future development are discussed.

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe₂) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe₂ 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe₂ single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

2D metal oxides (2DMOs) have been widely applied in the fields of electronic, magnetic, optical, and catalytic materials, owing to their rich surface chemistry and unique electronic structures. However, their further development faces challenges such as the difficulty in fabricating 2DMOs with unstable surface induced by strong surface polarizability, or the high cost and limited yield of the fabrication process. Recently, liquid metals have shown great potential in the fabrication of 2DMOs. The native oxide skin formed on the surface of liquid metals can be considered as a perfect 2D planar material. Due to the solubility, fluidity, and reactivity of liquid metals, they can act as the solvent, reactant, and interface in the fabrication of 2DMOs. Moreover, liquid metals undergo a liquid-solid phase transition, enabling them to be a symmetric matched substrate for growing high-quality 2DMOs. An insightful survey of the recent progress in this research direction is presented. The features of liquid metals including good solubility, chemical reactivity, weak interface force, and liquid-solid phase transitions are introduced in detail. Furthermore, strategies for the fabrication of 2DMOs by virtue of these features are summarized comprehensively. Finally, current challenges and prospects regarding the future development in the fabrication of 2DMOs via liquid metals are highlighted.

Hetero-MXenes: Theory, Synthesis, and Emerging Applications

Since their discovery in 2011, MXenes (abbreviation for transition metal carbides, nitrides, and carbonitrides) have emerged as a rising star in the family of 2D materials owing to their unique properties. Although the primary research interest is still focused on pristine MXenes and their composites, much attention has in recent years been paid also to MXenes with diverse compositions. To this end, this work offers a comprehensive overview of the progress on compositional engineering of MXenes in terms of doping and substituting from theoretical predictions to experimental investigations. Synthesis and properties are briefly introduced for pristine MXenes and then reviewed for hetero-MXenes. Theoretical calculations regarding the doping/substituting at M, X, and T sites in MXenes and the role of vacancies are summarized. After discussing the synthesis of hetero-MXenes with metal/nonmetal (N, S, P) elements by in situ and ex situ strategies, the focus turns to their emerging applications in various fields such as energy storage, electrocatalysts, and sensors. Finally, challenges and prospects of hetero-MXenes are addressed. It is anticipated that this review will be beneficial to bridge the gap between predictions and experiments as well as to guide the future design of hetero-MXenes with high performance.

Applications of Few-Layer Nb2C MXene: Narrow-Band Photodetectors and Femtosecond Mode-Locked Fiber Lasers

Although the physicochemical properties of niobium carbide (Nb₂C) have been widely investigated, their exploration in the field of photoelectronics is still at the infancy stage with many potential applications that remain to be exploited. Hence, it is demonstrated here that few-layer Nb₂C MXene can serve as an excellent building block for both photoelectrochemical-type photodetectors (PDs) and mode-lockers. We show that the photoresponse performance can be readily adjusted by external conditions and that Nb₂C NSs exhibit a great potential for narrow-band PDs. The demonstrated mechanism was further confirmed by work functions predicted by density functional theory calculations. In addition, as an optical switch for passively mode-locked fiber lasers, ultrastable pulses can be demonstrated in the telecommunication and mid-infrared regions for Nb₂C MXene, and as high as the 69th harmonic order with 411 MHz at the center wavelength of 1882 nm can be achieved. These intriguing results indicate that few-layer Nb₂C nanosheets can be used as building blocks for various photoelectronic devices, further broadening the application prospects of two-dimensional MXenes.

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

For the last decade, two-dimensional transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their unique physical and chemical properties. Novel devices based on these materials are commonly fabricated using the exfoliated samples, which lacks control of the thickness and cannot be scaled. Therefore, the synthesis of large-area TMDC thin films with a high uniformity to advance the field is required. This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition methods. The key factors that determine the electrical performance of TMDCs are introduced, including the interfacial properties and defects. The latest solution-based techniques which suggest the opportunity to obtain large-area TMDC thin films with a low-cost process and the potential applications in electronics and optoelectronics are also discussed. The outlook for future research directions, challenges, and possible development of 2D materials are further discussed.

Recent Advances in Growth of Large-Sized 2D Single Crystals on Cu Substrates

Large-scale and high-quality 2D materials have been an emerging and promising choice for use in modern chemistry and physics owing to their fascinating property profile. The past few years have witnessed inspiringly progressing development in controlled fabrication of large-sized and single-crystal 2D materials. Among those production methods, chemical vapor deposition (CVD) has drawn the most attention because of its fine control over size and quality of 2D materials by modulating the growth conditions. Meanwhile, Cu has been widely accepted as the most popular catalyst due to its significant merit in growing monolayer 2D materials in the CVD process. Herein, very recent advances in preparing large-sized 2D single crystals on Cu substrates by CVD are presented. First, the unique features of Cu will be given in terms of ultralow precursor solubility and feasible surface engineering. Then, scaled growth of graphene and hexagonal boron nitride (h-BN) crystals on Cu substrates is demonstrated, wherein different kinds of Cu surfaces have been employed. Furthermore, the growth mechanism for the growth of 2D single crystals is exhibited, offering a guideline to elucidate the in-depth growth dynamics and kinetics. Finally, relevant issues for industrial-scale mass production of 2D single crystals are discussed and a promising future is expected.

Integrated Plasmonics: Broadband Dirac Plasmons in Borophene

The past decade has witnessed numerous discoveries of two-dimensional (2D) semimetals and insulators, whereas 2D metals were rarely identified. Borophene, a monolayer boron sheet, has recently emerged as a perfect 2D metal with unique electronic properties. Here we study collective excitations in borophene, which exhibit two major plasmon modes with low damping rates extending from the infrared to ultraviolet regime. The anisotropic 1D plasmon originates from electronic transitions of tilted Dirac cones in borophene, analogous to that in extreme doped graphene. These features enable borophene as an integrated platform of 1D, 2D, and Dirac plasmons, promising for directional polariton transport and broadband optical communication in next-generation optoelectronic devices.

Growth and Grain Boundaries in 2D Materials

Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.

2D Inorganic Bimolecular Crystals with Strong In-Plane Anisotropy for Second-Order Nonlinear Optics

2D inorganic bimolecular crystals, consisting of two different inorganic molecules, are expected to possess novel physical and chemical properties due to the synergistic effect of the individual components. However, 2D inorganic bimolecular crystals remain unexploited because of the difficulties in preparation arising from non-typical layered structures and intricate intermolecular interactions. Here, the synthesis of 2D inorganic bimolecular crystal SbI₃ ·3S₈ nanobelts via a facile vertical microspacing sublimation strategy is reported. The as-synthesized SbI₃ ·3S₈ nanobelts exhibit strong in-plane anisotropy of phonon vibrations and intramolecular vibrations as well as show anisotropic light absorption with a high dichroism ratio of 3.9. Furthermore, it is revealed that the second harmonic generation intensity of SbI₃ ·3S₈ nanobelts is highly dependent on the excitation wavelength and crystallographic orientation. This work can inspire the growth of more 2D inorganic bimolecular crystals and excite potential applications for bimolecular optoelectronic devices.

Chemical Vapor Deposition of IrTe2 Thin Films

Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.