1
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Hu S, Cui X, Yue Z, Wang P, Ohnishi K, Wu SQ, Su SQ, Sato O, Yamada S, Kimura T. Exchange Bias Induced by the Spin-Glass-Like State in a Te-Rich FeGeTe van der Waals Ferromagnet. NANO LETTERS 2024; 24:6924-6930. [PMID: 38820073 DOI: 10.1021/acs.nanolett.4c01031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2024]
Abstract
We have experimentally investigated the mechanism of the exchange bias in 2D van der Waals (vdW) ferromagnets by means of the anomalous Hall effect (AHE) together with the dynamical magnetization property. The temperature dependence of the AC susceptibility with its frequency response indicates a glassy transition of the magnetic property for the Te-rich FeGeTe vdW ferromagnet. We also found that the irreversible temperature dependence in the anomalous Hall voltage follows the de Almeida-Thouless line. Moreover, the freezing temperature of the spin-glass-like phase is found to correlate with the disappearance temperature of the exchange bias. These important signatures suggest that the emergence of magnetic exchange bias in the 2D van der Waals ferromagnets is induced by the presence of the spin-glass-like state in FeGeTe. The unprecedented insights gained from these findings shed light on the underlying principles governing exchange bias in vdW ferromagnets, contributing to the advancement of our understanding.
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Affiliation(s)
- Shaojie Hu
- Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
| | - Xiaomin Cui
- Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
| | - Zengji Yue
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Pangpang Wang
- Institute of Systems, Information Technologies and Nanotechnologies (ISIT), Fukuoka 819-0388, Japan
| | - Kohei Ohnishi
- Department of Electrical, Electronic and Communication Engineering, Kindai University, 3-4-1 Kowaka, Higashi-Osakae, Osaka 577-8502, Japan
| | - Shu-Qi Wu
- Institute for Materials Chemistry and Engineering and IRCCS, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Sheng-Qun Su
- Institute for Materials Chemistry and Engineering and IRCCS, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Osamu Sato
- Institute for Materials Chemistry and Engineering and IRCCS, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
| | - Sunao Yamada
- Institute of Systems, Information Technologies and Nanotechnologies (ISIT), Fukuoka 819-0388, Japan
| | - Takashi Kimura
- Department of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan
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2
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Gu K, Zhang X, Liu X, Guo X, Wu Z, Wang S, Song Q, Wang W, Wei L, Liu P, Ma J, Xu Y, Niu W, Pu Y. Exchange Bias Modulated by Antiferromagnetic Spin-Flop Transition in 2D Van der Waals Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307034. [PMID: 38353386 PMCID: PMC11077673 DOI: 10.1002/advs.202307034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2023] [Revised: 01/29/2024] [Indexed: 05/09/2024]
Abstract
Exchange bias is extensively studied and widely utilized in spintronic devices, such as spin valves and magnetic tunnel junctions. 2D van der Waals (vdW) magnets, with high-quality interfaces in heterostructures, provide an excellent platform for investigating the exchange bias effect. To date, intrinsic modulation of exchange bias, for instance, via precise manipulation of the magnetic phases of the antiferromagnetic layer, is yet to be fully reached, owing partly to the large exchange fields of traditional bulk antiferromagnets. Herein, motivated by the low-field spin-flop transition of a 2D antiferromagnet, CrPS4, exchange bias is explored by modulating the antiferromagnetic spin-flop phase transition in all-vdW magnetic heterostructures. The results demonstrate that undergoing the spin-flop transition during the field cooling process, the A-type antiferromagnetic ground state of CrPS4 turns into a canted antiferromagnetic one, therefore, it reduces the interfacial magnetic coupling and suppresses the exchange bias. Via conducting different cooling fields, one can select the exchange bias effect switching among the "ON", "depressed", and "OFF" states determined by the spin flop of CrPS4. This work provides an approach to intrinsically modulate the exchange bias in all-vdW heterostructures and paves new avenues to design and manipulate 2D spintronic devices.
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Affiliation(s)
- Kai Gu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Xiaoqian Zhang
- Key Laboratory of Quantum Materials and Devices of Ministry of EducationSchool of PhysicsSoutheast UniversityNanjing211189China
- International Quantum AcademyShenzhen518048China
| | - Xiangjie Liu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Xinlei Guo
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Zhenqi Wu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Shuo Wang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Qinxin Song
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Wei Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced MaterialsJiangsu National Synergetic Innovation Center for Advanced MaterialsNanjing Tech UniversityNanjing211816China
| | - Lujun Wei
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Ping Liu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
| | - Jingrui Ma
- Key Laboratory of Energy Conversion and Storage TechnologiesSouthern University of Science and TechnologyShenzhen518055China
| | - Yongbing Xu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
- School of Electronic Science and EngineeringNanjing UniversityNanjing210023China
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
- Key Laboratory of Energy Conversion and Storage TechnologiesSouthern University of Science and TechnologyShenzhen518055China
| | - Yong Pu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of ScienceNanjing University of Posts and TelecommunicationsNanjing210023China
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3
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Qiao L, Barone P, Yang B, King PDC, Ren W, Picozzi S. Electron doping as a handle to increase the Curie temperature in ferrimagnetic Mn 3Si 2X 6 (X = Se, Te). Phys Chem Chem Phys 2024; 26:8604-8612. [PMID: 38319643 DOI: 10.1039/d3cp05525f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
By analysing the results of ab initio simulations performed for Mn3Si2X6 (X = Se, Te), we first discuss the analogies and the differences in electronic and magnetic properties arising from the anion substitution, in terms of size, electronegativity, band widths of p electrons and spin-orbit coupling strengths. For example, through mean-field theory and simulations based on density functional theory, we demonstrate that magnetic frustration, known to be present in Mn3Si2Te6, also exists in Mn3Si2Se6 and leading to a ferrimagnetic ground state. Building on these results, we propose a strategy, electronic doping, to reduce the frustration and thus to increase the Curie temperature (TC). To this end, we first study the effect of electronic doping on the electronic structure and magnetic properties and discuss the differences in the two compounds, along with their causes. Secondly, we perform Monte-Carlo simulations, considering from the first to the fifth nearest-neighbor magnetic interactions and single-ion anisotropy, and show that electron doping efficiently raises the TC.
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Affiliation(s)
- Lei Qiao
- Physics Department, International Center of Quantum and Molecular Structures, Materials Genome Institute, State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China.
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzi c/o Università "G. D'Annunzio", 66100 Chieti, Italy.
| | - Paolo Barone
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Area della Ricerca di Tor Vergata, Via del Fosso del Cavaliere 100, I-00133 Rome, Italy
| | - Baishun Yang
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzi c/o Università "G. D'Annunzio", 66100 Chieti, Italy.
| | - Phil D C King
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, UK
| | - Wei Ren
- Physics Department, International Center of Quantum and Molecular Structures, Materials Genome Institute, State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China.
| | - Silvia Picozzi
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzi c/o Università "G. D'Annunzio", 66100 Chieti, Italy.
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4
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Li P, Tao L, Jin X, Wan G, Zhang J, Zhang YF, Sun JT, Pan J, Du S. Nonvolatile Multistate Manipulation of Topological Magnetism in Monolayer CrI 3 through Quadruple-Well Ferroelectric Materials. NANO LETTERS 2024; 24:2345-2351. [PMID: 38334460 DOI: 10.1021/acs.nanolett.3c04799] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Nonvolatile multistate manipulation of two-dimensional (2D) magnetic materials holds promise for low dissipation, highly integrated, and versatile spintronic devices. Here, utilizing density functional theory calculations and Monte Carlo simulations, we report the realization of nonvolatile and multistate control of topological magnetism in monolayer CrI3 by constructing multiferroic heterojunctions with quadruple-well ferroelectric (FE) materials. The Pt2Sn2Te6/CrI3 heterojunction exhibits multiple magnetic phases upon modulating FE polarization states of FE layers and interlayer sliding. These magnetic phases include Bloch-type skyrmions and ferromagnetism, as well as a newly discovered topological magnetic structure. We reveal that the Dzyaloshinskii-Moriya interaction (DMI) induced by interfacial coupling plays a crucial role in magnetic skyrmion manipulation, which aligns with the Fert-Levy mechanism. Moreover, a regular magnetic skyrmion lattice survives when removing a magnetic field, demonstrating its robustness. The work sheds light on an effective approach to nonvolatile and multistate control of 2D magnetic materials.
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Affiliation(s)
- Peixuan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Tao
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xin Jin
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guolin Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Zhang
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yan-Fang Zhang
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jia-Tao Sun
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jinbo Pan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Shixuan Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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5
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Ngaloy R, Zhao B, Ershadrad S, Gupta R, Davoudiniya M, Bainsla L, Sjöström L, Hoque MA, Kalaboukhov A, Svedlindh P, Sanyal B, Dash SP. Strong In-Plane Magnetization and Spin Polarization in (Co 0.15Fe 0.85) 5GeTe 2/Graphene van der Waals Heterostructure Spin-Valve at Room Temperature. ACS NANO 2024. [PMID: 38330915 PMCID: PMC10883121 DOI: 10.1021/acsnano.3c07462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Van der Waals (vdW) magnets are promising, because of their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, so far, most of the vdW magnet-based spintronic devices have been limited to cryogenic temperatures with magnetic anisotropies favoring out-of-plane or canted orientation of the magnetization. Here, we report beyond room-temperature lateral spin-valve devices with strong in-plane magnetization and spin polarization of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Density functional theory (DFT) calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Magnetization measurements reveal the above room-temperature ferromagnetism in CFGT and clear remanence at room temperature. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices, such as efficient spin injection and detection. Further analysis of spin transport and Hanle spin precession measurements reveals a strong in-plane magnetization with negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus revealing its potential application in spintronic technologies.
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Affiliation(s)
- Roselle Ngaloy
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Soheil Ershadrad
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Rahul Gupta
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
- Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Masoumeh Davoudiniya
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Lakhan Bainsla
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Roopnagar 140001, Punjab, India
| | - Lars Sjöström
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Md Anamul Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
| | - Peter Svedlindh
- Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala, Sweden
| | - Saroj Prasad Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
- Graphene Center, Chalmers University of Technology, SE-41296 Göteborg, Sweden
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6
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Chen X, Zhang X, Xiang G. Recent advances in two-dimensional intrinsic ferromagnetic materials Fe 3X( X=Ge and Ga)Te 2 and their heterostructures for spintronics. NANOSCALE 2024; 16:527-554. [PMID: 38063022 DOI: 10.1039/d3nr04977a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Owing to their atomic thicknesses, atomically flat surfaces, long-range spin textures and captivating physical properties, two-dimensional (2D) magnetic materials, along with their van der Waals heterostructures (vdWHs), have attracted much interest for the development of next-generation spin-based materials and devices. As an emergent family of intrinsic ferromagnetic materials, Fe3X(X=Ge and Ga)Te2 has become a rising star in the fields of condensed matter physics and materials science owing to their high Curie temperature and large perpendicular magnetic anisotropy. Herein, we aim to comprehensively summarize the recent progress on 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs and provide a panorama of their physical properties and underlying mechanisms. First, an overview of Fe3X(X=Ge and Ga)Te2 is presented in terms of crystalline and electronic structures, distinctive physical properties and preparation methods. Subsequently, the engineering of electronic and spintronic properties of Fe3X(X=Ge and Ga)Te2 by diverse means, including strain, gate voltage, substrate and patterning, is surveyed. Then, the latest advances in spintronic devices based on 2D Fe3X(X=Ge and Ga)Te2 vdWHs are discussed and elucidated in detail, including vdWH devices that exploit the exchange bias effect, magnetoresistance effect, spin-orbit torque effect, magnetic proximity effect and Dzyaloshinskii-Moriya interaction. Finally, the future outlook is given in terms of efficient large-scale fabrication, intriguing physics and important technological applications of 2D Fe3X(X=Ge and Ga)Te2 and their vdWHs. Overall, this study provides an overview to support further studies of emergent 2D Fe3X(X=Ge and Ga)Te2 materials and related vdWH devices for basic science and practical applications.
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Affiliation(s)
- Xia Chen
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Xi Zhang
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Gang Xiang
- College of Physics, Sichuan University, Chengdu 610064, China.
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7
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Yang J, Wang X, Li S, Wang X, Pan M, Ai M, Yuan H, Peng X, Wang R, Li Q, Zheng F, Zhang P. Robust Two-Dimensional Ferromagnetism in Cr 5Te 8/CrTe 2 Heterostructure with Curie Temperature above 400 K. ACS NANO 2023; 17:23160-23168. [PMID: 37926969 DOI: 10.1021/acsnano.3c09654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
The discovery of ferromagnetism in two-dimensional (2D) van der Waals crystals has generated widespread interest. The seeking of robust 2D ferromagnets with high Curie temperature (Tc) is vitally important for next-generation spintronic devices. However, owing to the enhanced spin fluctuation and weak exchange interaction upon the reduced dimensionalities, the exploring of robust 2D ferromagnets with Tc > 300 K is highly demanded but remains challenging. In this work, we fabricated air-stable 2D Cr5Te8/CrTe2 vertical heterojunctions with Tc above 400 K by the chemical vapor deposition method. Transmission electron microscopy demonstrates a high-quality-crystalline epitaxial structure between tri-Cr5Te8 and 1T-CrTe2 with striped moiré patterns and a superior ambient stability over six months. A built-in dual-axis strain together with strong interfacial coupling cooperatively leads to a record-high Tc for the CrxTey family. A temperature-dependent spin-flip process induces the easy axis of magnetization to rotate from the out-of-plane to the in-plane direction, indicating a phase-dependent proximity coupling effect, rationally interpreted by first-principles calculations of the magnetic anisotropy of a tri-Cr5Te8 and 1T-CrTe2 monolayer. Our results provide a material realization of effectively enhancing the transition temperature of 2D ferromagnetism and manipulating the spin-flip of the easy axis, which will facilitate future spintronic applications.
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Affiliation(s)
- Jielin Yang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Xinyu Wang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Shujing Li
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Xina Wang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Minghu Pan
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Mingzhong Ai
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Hui Yuan
- School of Physics, Hubei University, Wuhan 430062, China
| | - Xiaoniu Peng
- School of Physics, Hubei University, Wuhan 430062, China
| | - Ruilong Wang
- School of Physics, Hubei University, Wuhan 430062, China
| | - Quan Li
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | - Fawei Zheng
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
| | - Ping Zhang
- Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
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8
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Feng S, Duan H, Tan H, Hu F, Liu C, Wang Y, Li Z, Cai L, Cao Y, Wang C, Qi Z, Song L, Liu X, Sun Z, Yan W. Intrinsic room-temperature ferromagnetism in a two-dimensional semiconducting metal-organic framework. Nat Commun 2023; 14:7063. [PMID: 37923720 PMCID: PMC10624846 DOI: 10.1038/s41467-023-42844-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Accepted: 10/24/2023] [Indexed: 11/06/2023] Open
Abstract
The development of two-dimensional (2D) magnetic semiconductors with room-temperature ferromagnetism is a significant challenge in materials science and is important for the development of next-generation spintronic devices. Herein, we demonstrate that a 2D semiconducting antiferromagnetic Cu-MOF can be endowed with intrinsic room-temperature ferromagnetic coupling using a ligand cleavage strategy to regulate the inner magnetic interaction within the Cu dimers. Using the element-selective X-ray magnetic circular dichroism (XMCD) technique, we provide unambiguous evidence for intrinsic ferromagnetism. Exhaustive structural characterizations confirm that the change of magnetic coupling is caused by the increased distance between Cu atoms within a Cu dimer. Theoretical calculations reveal that the ferromagnetic coupling is enhanced with the increased Cu-Cu distance, which depresses the hybridization between 3d orbitals of nearest Cu atoms. Our work provides an effective avenue to design and fabricate MOF-based semiconducting room-temperature ferromagnetic materials and promotes their practical applications in next-generation spintronic devices.
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Affiliation(s)
- Sihua Feng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Hengli Duan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Hao Tan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Fengchun Hu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Chaocheng Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Yao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Zhi Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Liang Cai
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Yuyang Cao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Chao Wang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Zeming Qi
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Li Song
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Xuguang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Zhihu Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
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9
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Feng M, Ahlm N, Sasaki DY, Chiu IT, N’Diaye AT, Shafer P, Klewe C, Mehta A, Takamura Y. Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La 2/3Sr 1/3CoO 3/La 2/3Sr 1/3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15. [PMID: 37910813 PMCID: PMC10658449 DOI: 10.1021/acsami.3c10376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2023] [Revised: 09/18/2023] [Accepted: 10/16/2023] [Indexed: 11/03/2023]
Abstract
Controlling the in-plane magnetocrystalline anisotropy and interfacial exchange coupling between ferromagnetic (FM) layers plays a key role in next-generation spintronic and magnetic memory devices. In this work, we explored the effect of tuning the magnetocrystalline anisotropy of La2/3Sr1/3CoO3 (LSCO) and La2/3Sr1/3MnO3 (LSMO) layers and the corresponding effect on interfacial exchange coupling by adjusting the thickness of the LSCO layer (tLSCO). The epitaxial LSCO/LSMO bilayers were grown on (110)o-oriented NdGaO3 (NGO) substrates with a fixed LSMO (top layer) thickness of 6 nm and LSCO (bottom layer) thicknesses varying from 1 to 10 nm. Despite the small difference (∼0.2%) in lattice mismatch between the two in-plane directions, [001]o and [11̅0]o, a pronounced in-plane magnetic anisotropy was observed. Soft X-ray magnetic circular dichroism hysteresis loops revealed that for tLSCO ≤ 4 nm, the easy axes for both LSCO and LSMO layers were along the [001]o direction, and the LSCO layer was characterized by magnetically active Co2+ ions that strongly coupled to the LSMO layer. No exchange bias effect was observed in the hysteresis loops. In contrast, along the [11̅0]o direction, the LSCO and LSMO layers displayed a small difference in their coercivity values, and a small exchange bias shift was observed. As tLSCO increased above 4 nm, the easy axis for the LSCO layer remained along the [100]o direction, but it gradually rotated to the [11̅0]o direction for the LSMO layer, resulting in a large negative exchange bias shift. Therefore, we provide a way to control the magnetocrystalline anisotropy and exchange bias by tuning the interfacial exchange coupling between the two FM layers.
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Affiliation(s)
- Mingzhen Feng
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
| | - Nolan Ahlm
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
| | - Dayne Y. Sasaki
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
| | - I-Ting Chiu
- Department
of Chemical Engineering, University of California,
Davis, Davis, California 95616, United States
| | - Alpha T. N’Diaye
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Padraic Shafer
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Christoph Klewe
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Apurva Mehta
- Stanford
Synchrotron Radiation Lightsource, SLAC
National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Yayoi Takamura
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
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10
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Ren H, Lan M. Progress and Prospects in Metallic Fe xGeTe 2 (3 ≤ x ≤ 7) Ferromagnets. Molecules 2023; 28:7244. [PMID: 37959664 PMCID: PMC10649090 DOI: 10.3390/molecules28217244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 10/05/2023] [Accepted: 10/21/2023] [Indexed: 11/15/2023] Open
Abstract
Thermal fluctuations in two-dimensional (2D) isotropy systems at non-zero finite temperatures can destroy the long-range (LR) magnetic order due to the mechanisms addressed in the Mermin-Wanger theory. However, the magnetic anisotropy related to spin-orbit coupling (SOC) may stabilize magnetic order in 2D systems. Very recently, 2D FexGeTe2 (3 ≤ x ≤ 7) with a high Curie temperature (TC) has not only undergone significant developments in terms of synthetic methods and the control of ferromagnetism (FM), but is also being actively explored for applications in various devices. In this review, we introduce six experimental methods, ten ferromagnetic modulation strategies, and four spintronic devices for 2D FexGeTe2 materials. In summary, we outline the challenges and potential research directions in this field.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Liaocheng 252000, China
| | - Mu Lan
- College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China
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11
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Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
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Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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12
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Cham TMJ, Dorrian RJ, Zhang XS, Dismukes AH, Chica DG, May AF, Roy X, Muller DA, Ralph DC, Luo YK. Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305739. [PMID: 37800466 DOI: 10.1002/adma.202305739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 09/06/2023] [Indexed: 10/07/2023]
Abstract
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3 GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.
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Affiliation(s)
| | | | | | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - David A Muller
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Daniel C Ralph
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Yunqiu Kelly Luo
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA, 90089, USA
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13
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Zhao Q, Zhu Y, Zhang H, Jiang B, Wang Y, Xie T, Lou K, Xia C, Yang H, Bi C. Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe 3GeTe 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46520-46526. [PMID: 37738105 DOI: 10.1021/acsami.3c09932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices, but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion doping are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their application in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building highly efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidence of magnetic proximity effects by using nonferromagnetic materials.
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Affiliation(s)
- Qianwen Zhao
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yingmei Zhu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Hanying Zhang
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baiqing Jiang
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuan Wang
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tunan Xie
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaihua Lou
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - ChaoChao Xia
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Hongxin Yang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Chong Bi
- Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
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14
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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15
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Liu P, Zhang Y, Li K, Li Y, Pu Y. Recent advances in 2D van der Waals magnets: Detection, modulation, and applications. iScience 2023; 26:107584. [PMID: 37664598 PMCID: PMC10470320 DOI: 10.1016/j.isci.2023.107584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2023] Open
Abstract
The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.
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Affiliation(s)
- Ping Liu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ying Zhang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
| | - Kehan Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yongde Li
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Yong Pu
- School of Science & New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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16
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Ozguven Y, Guler HE, Billur AA, Mogulkoc A, Modarresi M. Robust ferromagnetism in two-dimensional GeC/CrN heterobilayers. Phys Chem Chem Phys 2023; 25:22370-22379. [PMID: 37580987 DOI: 10.1039/d3cp01731a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
We have investigated the electronic and finite temperature magnetic properties of germanium carbide (GeC) and ferromagnetic chromium nitride (CrN) heterobilayers by using first-principles calculations based on density functional theory with Hubbard U correction and an effective anisotropic Heisenberg spin model. The dynamical stability of different stacking formations of heterobilayers is ensured by considering the phonon spectra. All the stacking patterns show half-metallicity with an out-of-plane easy-axis ferromagnetic ground state. We find a high Curie temperature for GeC/CrN heterobilayers within the random phase approximation (RPA). In addition to the symmetric stackings, i.e., AA and AB, the electronic properties of non-symmetric stackings at three different twist angles are also analyzed. The electronic structure analysis of twisted structures demonstrates that the half-metallicity of the GeC/CrN heterobilayer is stack independent. Furthermore, we have investigated the electronic properties, magnetic anisotropy energy, Curie temperature, and spin wave spectrum in the presence of biaxial strain. It is shown that the compressive strain dramatically reduces the magnetic anisotropy energy of the GeC/CrN heterobilayer and Curie temperature, but the Curie temperature still remains well above room temperature for all strain values. The increasing values of tensile strain reduce the magnetic exchange while it increases the magnetic anisotropy energy of the heterobilayer system which enhances the Curie temperature of the structures. The monolayer CrN on the GeC with a wide band gap and commensurate lattice together with a high Tc value can be a feasible candidate for future spintronic applications.
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Affiliation(s)
- Y Ozguven
- Department of Metallurgical and Materials Engineering, Sivas Cumhuriyet University, 58140, Sivas, Turkey
| | - H E Guler
- Department of Physics, Faculty of Sciences, Ankara University, 06100 Tandogan, Ankara, Turkey.
| | - A A Billur
- Department of Physics, Sivas Cumhuriyet University, 58140 Sivas, Turkey
| | - A Mogulkoc
- Department of Physics, Faculty of Sciences, Ankara University, 06100 Tandogan, Ankara, Turkey.
| | - M Modarresi
- Department of Physics, Faculty of Science, Ferdowsi University of Mashhad, Mashhad, Iran
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17
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Choi EM, Kim T, Cho BW, Lee YH. Proximity-Induced Tunable Magnetic Order at the Interface of All-van der Waals-Layered Heterostructures. ACS NANO 2023; 17:15656-15665. [PMID: 37523780 DOI: 10.1021/acsnano.3c02764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Spin-orbit coupling (SOC) plays a crucial role in controlling the spin-charge conversion efficiency, spin torque, and complex magnetic spin structures. In this study, we investigate the interplay between SOC and ferromagnetism in heterostructures of large-SOC and magnetic materials. We highlight the importance of the SOC-proximity effect on magnetic ordering in all-van der Waals-layered heterostructures, specifically Fe3GeTe2(FGT)/monolayer W1-xVxSe2 (x = 0 and 0.05). By increasing the SOC strength, we demonstrate various magnetic orderings induced at the interface of the heterostructure, including spin-flop, spin-flip, and inverted magnetization. Moreover, we show a sharp magnetic switching from antiferromagnetic state to ferromagnetic state in FGT/W0.95V0.05Se2, which is characteristic of the synthetic antiferromagnetic structure. This proof-of-concept result offers the possibility of interface-tailoring spintronics, including two-dimensional magnetoresistive random access memory toggle switching. Our findings provide insight into the design and development of next-generation spintronic devices by exploiting the interplay between SOC and magnetic ordering in all-van der Waals-layered heterostructures.
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Affiliation(s)
- Eun-Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Taesoo Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byeong Wook Cho
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Sungkyunkwan University, Suwon 16419, Republic of Korea
- Advanced Facility Center for Quantum Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
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18
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Ren H, Xiang G. Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2378. [PMID: 37630963 PMCID: PMC10459406 DOI: 10.3390/nano13162378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 08/09/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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19
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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20
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Intrinsic exchange bias state in silicene and germanene materials EuX 2. NANOSCALE HORIZONS 2023; 8:803-811. [PMID: 36987577 DOI: 10.1039/d3nh00009e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
2D magnets have recently emerged as a host for unconventional phases and related phenomena. The prominence of 2D magnetism stems from its high amenability to external stimuli and structural variations. The low dimensionality facilitates competition between magnetic orders which may give rise to exchange bias, in particular in magnetic heterostructures. Here, we propose a strategy for the search of exchange bias state in 2D individual compounds. We track the evolution of magnetic orders driven by the number of monolayers in a system exhibiting antiferromagnetism in the multilayer and ferromagnetism in the monolayer limit. The material, EuSi2, has the structure of multilayer silicene intercalated by Eu. A strong intrinsic exchange bias effect accompanies the dimensional crossover. Comparison with silicene-based GdSi2 and germanene-based EuGe2 suggests the competition between magnetic orders to be a common property of this class of materials that may be useful in spintronic applications.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
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21
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Li P, Liu N, Zhang J, Chen S, Zhou X, Guo D, Wang C, Ji W, Zhong D. Two-Dimensional Magnetic Semiconducting Heterostructures of Single-Layer CrI 3-CrI 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19574-19581. [PMID: 37014936 DOI: 10.1021/acsami.2c22494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Single-layer heterostructures of magnetic materials are unique platforms for studying spin-related phenomena in two dimensions (2D) and have promising applications in spintronics and magnonics. Here, we report the fabrication of 2D magnetic lateral heterostructures consisting of single-layer chromium triiodide (CrI3) and chromium diiodide (CrI2). By carefully adjusting the abundance of iodine based on molecular beam epitaxy, single-layer CrI3-CrI2 heterostructures were grown on Au(111) surfaces with nearly atomic-level seamless boundaries. Two distinct types of interfaces, i.e., zigzag and armchair interfaces, have been identified by means of scanning tunneling microscopy. Our scanning tunneling spectroscopy study combined with density functional theory calculations indicates the existence of spin-polarized ground states below and above the Fermi energy localized at the boundary. Both the armchair and zigzag interfaces exhibit semiconducting nanowire behaviors with different spatial distributions of density of states. Our work presents a novel low-dimensional magnetic system for studying spin-related physics with reduced dimensions and designing advanced spintronic devices.
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Affiliation(s)
- Peigen Li
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Nanshu Liu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872 Beijing, China
| | - Jihai Zhang
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Shenwei Chen
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Xuhan Zhou
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
| | - Donghui Guo
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872 Beijing, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, 100872 Beijing, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-sen University, 510275 Guangzhou, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275 Guangzhou, China
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22
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Huang X, Zhang L, Tong L, Li Z, Peng Z, Lin R, Shi W, Xue KH, Dai H, Cheng H, de Camargo Branco D, Xu J, Han J, Cheng GJ, Miao X, Ye L. Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications. Nat Commun 2023; 14:2190. [PMID: 37069179 PMCID: PMC10110563 DOI: 10.1038/s41467-023-37918-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 04/05/2023] [Indexed: 04/19/2023] Open
Abstract
The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB in van der Waals (vdW) spintronic devices. Here, we utilized pressure engineering to tune the vdW spacing of the two-dimensional (2D) FePSe3/Fe3GeTe2 heterostructures. The EB field (HEB, from 29.2 mT to 111.2 mT) and blocking temperature (Tb, from 20 K to 110 K) are significantly enhanced, and a highly sensitive and robust spin valve is demonstrated. Interestingly, this enhancement of the EB effect was extended to exposed Fe3GeTe2, due to the single-domain nature of Fe3GeTe2. Our findings provide opportunities for the producing, exploring, and tuning of magnetic vdW heterostructures with strong interlayer coupling, thereby enabling customized 2D spintronic devices in the future.
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Affiliation(s)
- Xinyu Huang
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Luman Zhang
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lei Tong
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zheng Li
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhuiri Peng
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Runfeng Lin
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wenhao Shi
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kan-Hao Xue
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hongwei Dai
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hui Cheng
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Danilo de Camargo Branco
- School of Industrial Engineering and Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, 47907, USA
| | - Jianbin Xu
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, China
| | - Junbo Han
- Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Gary J Cheng
- School of Industrial Engineering and Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, 47907, USA.
| | - Xiangshui Miao
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
| | - Lei Ye
- School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai, 200083, China.
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23
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Gogoi L, Gao W, Ajayan PM, Deb P. Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials. Phys Chem Chem Phys 2023; 25:1430-1456. [PMID: 36601788 DOI: 10.1039/d2cp05228h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.
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Affiliation(s)
- Liyenda Gogoi
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Pulickel M Ajayan
- Benjamin M. and Mary Greenwood Anderson Professor of Engineering, Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
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24
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Chen H, Asif S, Dolui K, Wang Y, Támara-Isaza J, Goli VMLDP, Whalen M, Wang X, Chen Z, Zhang H, Liu K, Jariwala D, Jungfleisch MB, Chakraborty C, May AF, McGuire MA, Nikolic BK, Xiao JQ, Ku MJH. Above-Room-Temperature Ferromagnetism in Thin van der Waals Flakes of Cobalt-Substituted Fe 5GeTe 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3287-3296. [PMID: 36602594 DOI: 10.1021/acsami.2c18028] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying the fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling thin and highly tunable spintronic devices. To realize high-quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here, the study of exfoliated flakes of cobalt-substituted Fe5GeTe2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm corresponding to 16 layers. This result expands the portfolio of thin room-temperature 2D magnet flakes exfoliated from robust single crystals that reach a thickness regime relevant to practical spintronic applications. The Curie temperature Tc of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed, which predicted a high value of Tc of ∼270 K in CFGT monolayers. Pathways toward further enhancing monolayer Tc are discussed. These results support CFGT as a promising platform for realizing high-quality room-temperature 2D magnet devices.
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Affiliation(s)
- Hang Chen
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Shahidul Asif
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware19716, United States
| | - Kapildeb Dolui
- Lomare Technologies Ltd., 6 London Street, LondonEC3R 7LP, United Kingdom
| | - Yang Wang
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Jeyson Támara-Isaza
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
- Departamento de Física, Universidad Nacional de Colombia, Bogotá D.C.110851, Colombia
| | - V M L Durga Prasad Goli
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Matthew Whalen
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Xinhao Wang
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Zhijie Chen
- Department of Physics, Georgetown University, Washington, District of Columbia20057, United States
| | - Huiqin Zhang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania19104, United States
| | - Kai Liu
- Department of Physics, Georgetown University, Washington, District of Columbia20057, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania19104, United States
| | - M Benjamin Jungfleisch
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Chitraleema Chakraborty
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware19716, United States
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Michael A McGuire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Branislav K Nikolic
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - John Q Xiao
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
| | - Mark J H Ku
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware19716, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware19716, United States
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25
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Huan Y, Luo T, Han X, Ge J, Cui F, Zhu L, Hu J, Zheng F, Zhao X, Wang L, Wang J, Zhang Y. Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe 5 Se 8 to Metallic Fe 3 Se 4 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207276. [PMID: 36263871 DOI: 10.1002/adma.202207276] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr2 S3 , Cr5 Te8 ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe5 Se8 and 50% Fe-intercalated monoclinic Fe3 Se4 ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe5 Se8 exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe2 to non-layered Fe-intercalated Fe5 Se8 based on density functional theory calculations. In contrast, the ultrathin Fe3 Se4 presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.
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Affiliation(s)
- Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Tiantian Luo
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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26
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Ma S, Li G, Li Z, Zhang Y, Lu H, Gao Z, Wu J, Long G, Huang Y. 2D Magnetic Semiconductor Fe 3GeTe 2 with Few and Single Layers with a Greatly Enhanced Intrinsic Exchange Bias by Liquid-Phase Exfoliation. ACS NANO 2022; 16:19439-19450. [PMID: 36288432 DOI: 10.1021/acsnano.2c09143] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A 2D van der Waals (vdW) magnet can get rid of the constraints of lattice matching and compatibility and then create a variety of vdW heterostructures, which provides a opportunity for spintronic devices. However, the ability to reliably exfoliate large, high-quality vdW ferromagnetic Fe3GeTe2 (FGT) nanoflakes in scaled-up production is severely limited. Herein, an efficient and stable three-stage sonication-assisted liquid-phase exfoliation was developed for mass preparation of high-structural-integrity few- and single-layer FGT nanoflakes with a greatly enhanced intrinsic exchange bias. The three stages include slicing crystals, weakening interlayer vdW forces, and using ultrasonic cavitation. The highest yield of FGT nanoflakes is 22.3 wt % with single layers accounting for 6%. The size is controllable, and several micrometers, tens of micrometers, and a maximum of 103 μm are available. The 200 mg level output has overcome the limitations of mechanical exfoliation and molecular beam epitaxy in economically amplificated production. An intrinsic exchange bias is observed in the restacked nanoflakes due to the magnetic proximity on the interface of the FGT/natural surface oxide layer. The material reaches 578 Oe (2 K) and 2300 Oe after further oxidation, at least 250% higher than other precisely tailored vdW magnetic heterostructures. In addition, the unusual semiconductivity of the liquid-phase exfoliated FGT nanoflakes is reported. This work skillfully utilizes oxidation to enhance the potential of FGT for large-scale spintronics, optoelectronics, efficient data storage, and various extended applications, and it is beneficial for exfoliating other promising magnetic vdW materials.
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Affiliation(s)
- Suping Ma
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
| | - Guanghao Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
| | - Zhuo Li
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
| | - Yawen Zhang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
| | - Haolin Lu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin300350, People's Republic of China
| | - Zhansheng Gao
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
| | - Jinxiong Wu
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
- Beijing National Laboratory for Molecular Sciences, Beijing100871, People's Republic of China
| | - Guankui Long
- School of Materials Science and Engineering, National Institute for Advanced Materials, Renewable Energy Conversion and Storage Center (RECAST), Nankai University, Tianjin300350, People's Republic of China
| | - Yi Huang
- National Institute for Advanced Materials, Tianjin Key Laboratory of Metal and Molecule Based Material Chemistry, Key Laboratory of Functional Polymer Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Materials Science and Engineering, Nankai University, Tianjin300350, People's Republic of China
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27
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Exchange Bias State at the Crossover to 2D Ferromagnetism. ACS NANO 2022; 16:19482-19490. [PMID: 36278843 DOI: 10.1021/acsnano.2c09452] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The inherent malleability of 2D magnetism provides access to unconventional quantum phases, in particular those with coexisting magnetic orders. Incidentally, in a number of materials, the magnetic state in the bulk undergoes a fundamental change when the system is pushed to the monolayer limit. Therefore, a competition of magnetic states can be expected in the crossover region. Here, an exchange bias state is observed at the crossover from 3D antiferromagnetism to 2D ferromagnetism driven by the number of monolayers in the metalloxene GdSi2. The material constitutes a stack of alternating monolayers of Gd and silicene, the Si analogue of graphene. The exchange bias manifests itself as a shift of the hysteresis loop signifying coupling of magnetic systems, as evidenced by magnetization studies. Two features distinguish the phenomenon: (i) it is intrinsic, i.e. it is detected in an individual compound; (ii) the exchange bias field, 1.5 kOe, is unusually high, which is conducive to applications. The results suggest magnetic derivatives of 2D-Xenes to be prospective materials for ultracompact spintronics.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
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28
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Healey AJ, Rahman S, Scholten SC, Robertson IO, Abrahams GJ, Dontschuk N, Liu B, Hollenberg LCL, Lu Y, Tetienne JP. Varied Magnetic Phases in a van der Waals Easy-Plane Antiferromagnet Revealed by Nitrogen-Vacancy Center Microscopy. ACS NANO 2022; 16:12580-12589. [PMID: 35866839 DOI: 10.1021/acsnano.2c04132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Interest in van der Waals materials often stems from a desire to miniaturize existing technologies by exploiting their intrinsic layered structures to create near-atomically thin components that do not suffer from surface defects. One appealing property is an easily switchable yet robust magnetic order, which is only sparsely demonstrated in the case of in-plane anisotropy. In this work, we use widefield nitrogen-vacancy (NV) center magnetic imaging to measure the properties of individual flakes of CuCrP2S6, a multiferroic van der Waals magnet known to exhibit weak easy-plane anisotropy in the bulk. We chart the crossover between the in-plane ferromagnetism in thin flakes down to the trilayer and the bulk behavior dominated by a low-field spin-flop transition. Further, by exploiting the directional dependence of NV center magnetometry, we are able to observe an instance of a predominantly out-of-plane ferromagetic phase near zero field, in contrast with our expectation and previous experiments on the bulk material. We attribute this to the presence of surface anisotropies caused by the sample preparation process or exposure to the ambient environment, which is expected to have more general implications for a broader class of weakly anisotropic van der Waals magnets.
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Affiliation(s)
- Alexander J Healey
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Sam C Scholten
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Islay O Robertson
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Gabriel J Abrahams
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Nikolai Dontschuk
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Lloyd C L Hollenberg
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
- Centre for Quantum Computation and Communication Technology, School of Engineering, The Australian National University, Canberra, ACT 2601, Australia
| | - Jean-Philippe Tetienne
- School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
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29
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Dai H, Cai M, Hao Q, Liu Q, Xing Y, Chen H, Chen X, Wang X, Fu HH, Han J. Nonlocal Manipulation of Magnetism in an Itinerant Two-Dimensional Ferromagnet. ACS NANO 2022; 16:12437-12444. [PMID: 35900014 DOI: 10.1021/acsnano.2c03626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) magnets are crucial in the construction of 2D magnetic and spintronic devices. Many devices, including spin valves and multiple tunneling junctions, have been developed by vertically stacking 2D magnets with other functional blocks. However, owing to limited local interactions at the interfaces, the device structures are typically extremely complex. To solve this problem, the nonlocal manipulation of magnetism may be a good solution. In this study, we use the magneto-optical Kerr effect technique to demonstrate the nonlocal manipulation of magnetism in an itinerant 2D ferromagnet, Fe3GeTe2 (FGT), whose magnetism can be manipulated via an antiferromagnet/ferromagnet interface or a current-induced spin-orbital torque placed distant from the local site. It is discovered that the coupling of a small piece of MnPS3 (∼40 μm2) with FGT can significantly enhance the coercive field and emergence of exchange bias in the entire FGT flake (∼2000 μm2). Moreover, FGT flakes with different thicknesses have the same coercive field at low temperatures if they are coupled together. Our study provides an understanding of the basic magnetism of 2D itinerant ferromagnets as well as opportunities for engineering magnetism with an additional degree of freedom.
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Affiliation(s)
- Hongwei Dai
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Menghao Cai
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qinghua Hao
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Qingbo Liu
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuntong Xing
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hongjing Chen
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaodie Chen
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xia Wang
- School of Elementary Education, Wuhan City Polytechnic College, Wuhan, 430070, China
| | - Hua-Hua Fu
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Junbo Han
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
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Albarakati S, Xie WQ, Tan C, Zheng G, Algarni M, Li J, Partridge J, Spencer MJS, Farrar L, Xiong Y, Tian M, Wang X, Zhao YJ, Wang L. Electric Control of Exchange Bias Effect in FePS 3-Fe 5GeTe 2 van der Waals Heterostructures. NANO LETTERS 2022; 22:6166-6172. [PMID: 35912475 DOI: 10.1021/acs.nanolett.2c01370] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS3-Fe5GeTe2. By applying a solid protonic gate, the EB effects were repeatably electrically tuned. The EB field reaches up to 23% of the coercivity and the blocking temperature ranges from 30 to 60 K under various gate-voltages. The proton intercalations not only tune the average magnetic exchange coupling but also change the antiferromagnetic configurations in the FePS3 layer. These result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step toward vdW heterostructure-based magnetic logic for future low-energy electronics.
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Affiliation(s)
- Sultan Albarakati
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
- Physics Department, Faculty of Science and Arts, University of Jeddah, P.O. Box 80200, 21589Khulais, Saudi Arabia
| | - Wen-Qiang Xie
- Department of Physics, South China University of Technology, Guangzhou510640, China
| | - Cheng Tan
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Guolin Zheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - Meri Algarni
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Junbo Li
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - James Partridge
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Michelle J S Spencer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Lawrence Farrar
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Yimin Xiong
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui230601, China
| | - Xiaolin Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales2500, Australia
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2500, Australia
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou510640, China
| | - Lan Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
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Choi E, Sim KI, Burch KS, Lee YH. Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200186. [PMID: 35596612 PMCID: PMC9313546 DOI: 10.1002/advs.202200186] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.
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Affiliation(s)
- Eun‐Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kyung Ik Sim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kenneth S. Burch
- Department of PhysicsBoston College140 Commonwealth AveChestnut HillMA02467‐3804USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
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32
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Jo J, Calavalle F, Martín-García B, Tezze D, Casanova F, Chuvilin A, Hueso LE, Gobbi M. Exchange Bias in Molecule/Fe 3 GeTe 2 van der Waals Heterostructures via Spinterface Effects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200474. [PMID: 35334502 DOI: 10.1002/adma.202200474] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Revised: 03/06/2022] [Indexed: 06/14/2023]
Abstract
The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to engineer magnetic materials is molecular functionalization, generating hybrid interfaces with tailored magnetic interactions, called spinterfaces. However, spinterface effects have not yet been explored on layered magnetic materials. Here, the emergence of spinterface effects is demonstrated at the interface between flakes of the prototypical layered magnetic metal Fe3 GeTe2 and thin films of Co-phthalocyanine. Magnetotransport measurements show that the molecular layer induces a magnetic exchange bias in Fe3 GeTe2 , indicating that the unpaired spins in Co-phthalocyanine develop antiferromagnetic ordering and pin the magnetization reversal of Fe3 GeTe2 via magnetic proximity. The effect is strongest for a Fe3 GeTe2 thickness of 20 nm, for which the exchange bias field reaches -840 Oe at 10 K and is measurable up to ≈110 K. This value compares very favorably with previous exchange bias fields reported for Fe3 GeTe2 in all-inorganic van der Waals heterostructures, demonstrating the potential of molecular functionalization to tailor the magnetism of van der Waals layered materials.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
| | | | | | - Daniel Tezze
- CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48013, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48013, Spain
| | - Luis E Hueso
- CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48013, Spain
| | - Marco Gobbi
- CIC nanoGUNE, Donostia-San Sebastian, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48013, Spain
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, San Sebastián/Donostia, 20018, Spain
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Lin H, Luo X, Liu L, Wang D, Zhao X, Wang Z, Xue X, Zhang F, Xing G. All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing. MICROMACHINES 2022; 13:mi13020319. [PMID: 35208443 PMCID: PMC8876745 DOI: 10.3390/mi13020319] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 02/11/2022] [Accepted: 02/14/2022] [Indexed: 02/01/2023]
Abstract
Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading “1” and “0”, respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.
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Affiliation(s)
- Huai Lin
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xi Luo
- Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081, China;
| | - Long Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Di Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xuefeng Zhao
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Ziwei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyong Xue
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China;
| | - Feng Zhang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
- Correspondence:
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34
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Yu S, Tang J, Wang Y, Xu F, Li X, Wang X. Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural- and electric field-engineering toward spintronic applications. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:140-160. [PMID: 35185390 PMCID: PMC8856075 DOI: 10.1080/14686996.2022.2030652] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Revised: 01/03/2022] [Accepted: 01/09/2022] [Indexed: 05/27/2023]
Abstract
Since the first report on truly two-dimensional (2D) magnetic materials in 2017, a wide variety of merging 2D magnetic materials with unusual physical characteristics have been discovered and thus provide an effective platform for exploring the associated novel 2D spintronic devices, which have been made significant progress in both theoretical and experimental studies. Herein, we make a comprehensive review on the recent scientific endeavors and advances on the various engineering strategies on 2D ferromagnets, such as strain-, doping-, structural- and electric field-engineering, toward practical spintronic applications, including spin tunneling junctions, spin field-effect transistors and spin logic gate, etc. In the last, we discuss on current challenges and future opportunities in this field, which may provide useful guidelines for scientists who are exploring the fundamental physical properties and practical spintronic devices of low-dimensional magnets.
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Affiliation(s)
- Sheng Yu
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, China
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Junyu Tang
- Department of Physics and Astronomy, University of California, Riverside, CA, USA
| | - Yu Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Feixiang Xu
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Xiaoguang Li
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Xinzhong Wang
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, China
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35
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Lin H, Yan F, Hu C, Zheng Y, Sheng Y, Zhu W, Wang Z, Zheng H, Wang K. Current-assisted magnetization reversal in Fe 3GeTe 2 van der Waals homojunctions. NANOSCALE 2022; 14:2352-2358. [PMID: 35088803 DOI: 10.1039/d1nr07730a] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Among the numerous two-dimensional van der Waals (vdW) magnetic materials, Fe3GeTe2 (FGT), due to its outstanding properties such as metallicity, high Curie temperature and strong perpendicular magnetic anisotropy, has quickly emerged as a candidate with the most potential for the fabrication of all-vdW spintronic devices. Here, we fabricated a simple vertical homojunction based on two few-layer exfoliated FGT flakes. Under a certain range of external magnetic fields, the magnetization reversal can be achieved by applying a negative or positive pulse current, which can reduce the coercivity through the spin orbit torque of FGT itself in addition to the Joule heat. Moreover, the asymmetrical switching current is caused by the spin transfer torque in the homojunction. As the temperature increases, the magnetization reversal can be observed at a smaller external magnetic field. Our demonstrations of the current-assisted magnetization reversal under a magnetic field in all-vdW structures may provide support for the potential application of vdW magnetism.
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Affiliation(s)
- Hailong Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Faguang Yan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Ce Hu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuanhui Zheng
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Yu Sheng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ziao Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Houzhi Zheng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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36
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Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications. COATINGS 2022. [DOI: 10.3390/coatings12020122] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.
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37
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Hu L, Zhou J, Hou Z, Su W, Yang B, Li L, Yan M. Polymer-buried van der Waals magnets for promising wearable room-temperature spintronics. MATERIALS HORIZONS 2021; 8:3306-3314. [PMID: 34751291 DOI: 10.1039/d1mh01439k] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The demand for high-performance spintronic devices has boosted intense research on the manipulation of magnetism in van der Waals (vdW) magnets. Despite great efforts, robust ferromagnetic transitions above room temperature still face significant hurdles. Strain engineering can reversibly regulate magnetic exchange, but the degree of regulation is still impractical for most magnetic applications. Hereby we employ a large-strain transferrer to produce tunable strains of up to 4.7%, which induces authentic room-temperature ferromagnetism in large-area Fe3GeTe2 nanoflakes with 20-fold improvement in magnetization. The record increment of the Curie temperature (TC) of well above 400 K originates from the strain-enhanced magnetic anisotropy and excellent magnetoelastic coupling. The correlation between the emerging ferromagnetism and Raman spectral evolution is also established, which complements well the TC phase diagram in a large-strain region. In addition, an unusual exchange bias effect with a vertical magnetization shift is tracked for the first time upon bending, which reveals the hidden competition between antiferromagnetic and ferromagnetic coupling. The reversible strain manipulation of single-domain ferromagnetic order in a single nanoflake further opens up a route to develop low-power wearable spintronic devices. The findings here provide vast opportunities to exploit the possibility of practical applications of more vdW magnets.
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Affiliation(s)
- Liang Hu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
- State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Jian Zhou
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Zhipeng Hou
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Weitao Su
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Bingzhang Yang
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Lingwei Li
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
| | - Mi Yan
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China.
- State Key Lab of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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38
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Li W, Zeng Y, Zhao Z, Zhang B, Xu J, Huang X, Hou Y. 2D Magnetic Heterostructures and Their Interface Modulated Magnetism. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50591-50601. [PMID: 34674524 DOI: 10.1021/acsami.1c11132] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.
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Affiliation(s)
- Wei Li
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yi Zeng
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zijing Zhao
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Biao Zhang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Junjie Xu
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxiao Huang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yanglong Hou
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
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39
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Kong X, Yoon H, Han MJ, Liang L. Switching interlayer magnetic order in bilayer CrI 3 by stacking reversal. NANOSCALE 2021; 13:16172-16181. [PMID: 34545388 DOI: 10.1039/d1nr02480a] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
CrI3, a hot two-dimensional (2D) magnet, exhibits complex magnetism depending on the number of layers and interlayer stacking patterns. For bilayer CrI3, the interlayer magnetism can be tuned between ferromagnetic (FM) and antiferromagnetic (AFM) order by manipulating the stacking order. However, the stacking is mostly modified through translation between the layers, while the effect of rotation between the layers on the interlayer magnetic order has not yet been fully investigated. Here, we considered three energetically stable stacking patterns R3̄, C2/m and AA in bilayer CrI3, and their reversed counterparts R3̄-r, C2/m-r and AA-r through rotating one layer by 180° with respect to the other layer. Our first-principles calculations suggest that the interlayer magnetic ground state can be switched from AFM to FM (or FM to AFM) by reversing the stacking pattern. A detailed microscopic analysis was carried out by magnetic force theory calculations on C2/m stacking which favors AFM and C2/m-r stacking which favors FM. The interlayer magnetic interactions and the origin of the magnetic order change were revealed through specific orbital analysis. Our work demonstrates that stacking rotation can also tune the interlayer magnetism of CrI3 and provides insight into its interlayer magnetic properties at the microscopic level.
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Affiliation(s)
- Xiangru Kong
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory (ORNL), Oak Ridge, Tennessee 37831, USA.
| | - Hongkee Yoon
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory (ORNL), Oak Ridge, Tennessee 37831, USA.
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40
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Chen Q, Liang J, Fang B, Zhu Y, Wang J, Lv W, Lv W, Cai J, Huang Z, Zhai Y, Zhang B, Zeng Z. Proximity effect of a two-dimensional van der Waals magnet Fe 3GeTe 2 on nickel films. NANOSCALE 2021; 13:14688-14693. [PMID: 34533556 DOI: 10.1039/d1nr03342e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recent advances in two-dimensional van der Waals (2D vdW) magnets provide new platforms to study their magnetism in reduced dimensions. However, most of the studies performed to date have been limited to low temperatures. Here, we report the proximity effect of a 2D vdW magnet Fe3GeTe2 (FGT) on nickel (Ni) films at room temperature. Ferromagnetic resonance measurements show that FGT can increase the perpendicular magnetic anisotropy (PMA) and magnetic damping of the adjacent Ni film. Such an interfacial effect is observed at room temperature, and becomes more pronounced as the temperature decreases. A similar effect is also achieved in another 2D heterostructure of Cr2Ge2Te6/Ni, implying its universality in a variety of 2D magnetic materials. Our work provides a new approach for utilizing 2D magnets in spintronics at room temperature.
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Affiliation(s)
- Qian Chen
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
| | - Jian Liang
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Bin Fang
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi, 330200, China
| | - Yonghui Zhu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Jiachen Wang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
| | - Weiming Lv
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi, 330200, China
| | - Wenxing Lv
- Physics Laboratory, Industrial Training Center, Shenzhen Polytechnic, Shenzhen, Guangdong, 518055, China
| | - Jialin Cai
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi, 330200, China
| | - Zhaocong Huang
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Ya Zhai
- School of Physics, Southeast University, Nanjing, Jiangsu, 211189, China.
| | - Baoshun Zhang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
| | - Zhongming Zeng
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China.
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41
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Tang W, Liu H, Li Z, Pan A, Zeng Y. Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100847. [PMID: 34323390 PMCID: PMC8456225 DOI: 10.1002/advs.202100847] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.
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Affiliation(s)
- Wei Tang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Haoliang Liu
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Zhe Li
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Yu‐Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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42
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Sierra JF, Fabian J, Kawakami RK, Roche S, Valenzuela SO. Van der Waals heterostructures for spintronics and opto-spintronics. NATURE NANOTECHNOLOGY 2021; 16:856-868. [PMID: 34282312 DOI: 10.1038/s41565-021-00936-x] [Citation(s) in RCA: 107] [Impact Index Per Article: 35.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 06/03/2021] [Indexed: 06/13/2023]
Abstract
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies.
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Affiliation(s)
- Juan F Sierra
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain.
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, Regensburg, Germany
| | | | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST), Barcelona, Spain.
- Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain.
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Zhang Y, Fan T, Yang S, Wang F, Yang S, Wang S, Su J, Zhao M, Hu X, Zhang H, Zhai T. Recent Advances in 2D Layered Phosphorous Compounds. SMALL METHODS 2021; 5:e2001068. [PMID: 34927843 DOI: 10.1002/smtd.202001068] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2020] [Revised: 12/20/2020] [Indexed: 06/14/2023]
Abstract
2D layered phosphorous compounds (2D LPCs) have led to explosion of research interest in recent years. With the diversity of valence states of phosphorus, 2D LPCs exist in various material types and possess many novel physical and chemical properties. These properties, including widely adjustable range of bandgap, diverse electronic properties covering metal, semimetal, semiconductor and insulator, together with inherent magnetism and ferroelectricity at atomic level, render 2D LPCs greatly promising in the applications of electronics, spintronics, broad-spectrum optoelectronics, high-performance catalysts, and energy storage, etc. In this review, the recently research progress of 2D LPCs are presented in detail. First, the 2D LPCs are classified according to their elemental composition and the corresponding crystal structures are introduced, followed by their preparation methods. Then, the novel properties are summarized and the potential applications are discussed in detail. Finally, the conclusion and perspective of the promising 2D LPCs are discussed on the foundation of the latest research progress.
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Affiliation(s)
- Yue Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Taojian Fan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shuzhe Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Mei Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Han Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Yang W, Cao Y, Han J, Lin X, Wang X, Wei G, Lv C, Bournel A, Zhao W. Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions. NANOSCALE 2021; 13:862-868. [PMID: 33355579 DOI: 10.1039/d0nr07290g] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures, known as layer-by-layer stacked 2D materials in a precisely chosen sequence, have received more and more attention in spintronics for their ultra-clean interface, unique electronic properties and 2D ferromagnetism. Motivated by the recent synthesis of monolayer 1T-VSe2 with ferromagnetic ordering and a high Curie temperature above room temperature, we investigate the bias-voltage driven spin transport properties of 2D magnetic tunnel junctions (MTJs) based on VSe2 utilizing density functional theory combined with the nonequilibrium Green's function method. In the device 1T-MoSe2/1T-VSe2/2H-WSe2/1T-VSe2/1T-MoSe2, the tunneling magneto-resistance (TMR) is incredibly satisfactory up to 5600%. Based on the analysis of evanescent states, this large TMR is attributed to the spin filter effect at the interface between 1T-VSe2 and 2H-WSe2, which overcomes the low spin polarization of 1T-VSe2. Furthermore, by inserting 2H-MoSe2, the spin filter effect is enhanced with decreasing current and the TMR is drastically improved to 1.7 × 105%. This work highlights the feasibility of 2D vdW heterostructures for ultra-low power spintronic applications by electronic structural engineering.
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Affiliation(s)
- Wei Yang
- Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering & Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China.
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