1
|
Fortin-Deschênes M, Watanabe K, Taniguchi T, Xia F. Van der Waals epitaxy of tunable moirés enabled by alloying. NATURE MATERIALS 2024; 23:339-346. [PMID: 37580367 DOI: 10.1038/s41563-023-01596-z] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Accepted: 05/31/2023] [Indexed: 08/16/2023]
Abstract
The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible. While rotationally aligned, lattice-mismatched moirés such as WSe2/WS2 can be synthesized, they lack the critical moiré period tunability, and their formation mechanisms are not well understood. Here, we report the thermodynamically driven van der Waals epitaxy of moirés with a tunable period from 10 to 45 nanometres, using lattice mismatch engineering in two WSSe layers with adjustable chalcogen ratios. Contrary to conventional epitaxy, where lattice-mismatch-induced stress hinders high-quality growth, we reveal the key role of bulk stress in moiré formation and its unique interplay with edge stress in shaping the moiré growth modes. Moreover, the superlattices display tunable interlayer excitons and moiré intralayer excitons. Our studies unveil the epitaxial science of moiré synthesis and lay the foundations for moiré-based technologies.
Collapse
Affiliation(s)
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT, USA.
| |
Collapse
|
2
|
Li G, Li M, Zhou X, Gao HJ. Toward large-scale, ordered and tunable Majorana-zero-modes lattice on iron-based superconductors. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016501. [PMID: 37963402 DOI: 10.1088/1361-6633/ad0c5c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Accepted: 11/14/2023] [Indexed: 11/16/2023]
Abstract
Majorana excitations are the quasiparticle analog of Majorana fermions in solid materials. Typical examples are the Majorana zero modes (MZMs) and the dispersing Majorana modes. When probed by scanning tunneling spectroscopy, the former manifest as a pronounced conductance peak locating precisely at zero-energy, while the latter behaves as constant or slowly varying density of states. The MZMs obey non-abelian statistics and are believed to be building blocks for topological quantum computing, which is highly immune to the environmental noise. Existing MZM platforms include hybrid structures such as topological insulator, semiconducting nanowire or 1D atomic chains on top of a conventional superconductor, and single materials such as the iron-based superconductors (IBSs) and 4Hb-TaS2. Very recently, ordered and tunable MZM lattice has also been realized in IBS LiFeAs, providing a scalable and applicable platform for future topological quantum computation. In this review, we present an overview of the recent local probe studies on MZMs. Classified by the material platforms, we start with the MZMs in the iron-chalcogenide superconductors where FeTe0.55Se0.45and (Li0.84Fe0.16)OHFeSe will be discussed. We then review the Majorana research in the iron-pnictide superconductors as well as other platforms beyond the IBSs. We further review recent works on ordered and tunable MZM lattice, showing that strain is a feasible tool to tune the topological superconductivity. Finally, we give our summary and perspective on future Majorana research.
Collapse
Affiliation(s)
- Geng Li
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
| | - Meng Li
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xingtai Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| |
Collapse
|
3
|
Jo J, Peisen Y, Yang H, Mañas-Valero S, Baldoví JJ, Lu Y, Coronado E, Casanova F, Bergeret FS, Gobbi M, Hueso LE. Local control of superconductivity in a NbSe 2/CrSBr van der Waals heterostructure. Nat Commun 2023; 14:7253. [PMID: 37945570 PMCID: PMC10636142 DOI: 10.1038/s41467-023-43111-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 10/31/2023] [Indexed: 11/12/2023] Open
Abstract
Two-dimensional magnets and superconductors are emerging as tunable building-blocks for quantum computing and superconducting spintronic devices, and have been used to fabricate all two-dimensional versions of traditional devices, such as Josephson junctions. However, novel devices enabled by unique features of two-dimensional materials have not yet been demonstrated. Here, we present NbSe2/CrSBr van der Waals superconducting spin valves that exhibit infinite magnetoresistance and nonreciprocal charge transport. These responses arise from a unique metamagnetic transition in CrSBr, which controls the presence of localized stray fields suitably oriented to suppress the NbSe2 superconductivity in nanoscale regions and to break time reversal symmetry. Moreover, by integrating different CrSBr crystals in a lateral heterostructure, we demonstrate a superconductive spin valve characterized by multiple stable resistance states. Our results show how the unique physical properties of layered materials enable the realization of high-performance quantum devices based on novel working principles.
Collapse
Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
| | - Yuan Peisen
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Yao Lu
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - F Sebastian Bergeret
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
- Donostia International Physics Center (DIPC), E-20018, Donostia-San Sebastián, Spain
| | - Marco Gobbi
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| |
Collapse
|
4
|
Nie JH, Xie T, Chen G, Zhang W, Fu YS. Moiré Enhanced Two-Band Superconductivity in a MnTe/NbSe 2 Heterojunction. NANO LETTERS 2023; 23:8370-8377. [PMID: 37656911 DOI: 10.1021/acs.nanolett.3c02772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
Recent advances in creating moiré periods of two-dimensional heterostructures enable diverse and compatible tunability to modulate the conventional proximity effect involving superconductivity, magnetism, and topology. Here, by constructing a MnTe/NbSe2 heterojunction via molecular beam epitaxy growth, we report on a moiré-enhanced multiband superconductivity by low-temperature scanning tunneling microscopy/spectroscopy measurements. We observe a distinct double-gap superconducting spectrum on monolayer MnTe that is absent on the NbSe2 substrate. The subgap character exhibits a moiré-related oscillation in real space, which can be well described by an effective two-band model. The restored two-gap feature and its rapid suppression under a small magnetic field are speculated to be mediated by the moiré superlattice, which is closely related to the enhanced interband coupling strength of quasiparticle scattering. Our work paves the way for engineering proximitized properties of heterostructures by a moiré landscape with spatial modulations.
Collapse
Affiliation(s)
- Jin-Hua Nie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Tao Xie
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Gang Chen
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| |
Collapse
|
5
|
Lyu P, Sødequist J, Sheng X, Qiu Z, Tadich A, Li Q, Edmonds MT, Zhao M, Redondo J, Švec M, Song P, Olsen T, Lu J. Gate-Tunable Renormalization of Spin-Correlated Flat-Band States and Bandgap in a 2D Magnetic Insulator. ACS NANO 2023; 17:15441-15448. [PMID: 37552585 DOI: 10.1021/acsnano.3c01038] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between exchange and Coulomb interactions. The ability to precisely tune the Coulomb interaction enables the control of spin-correlated flat-band states, band gap, and unconventional magnetism in such strongly correlated materials. Here, we demonstrate a gate-tunable renormalization of spin-correlated flat-band states and bandgap in magnetic chromium tribromide (CrBr3) monolayers grown on graphene. Our gate-dependent scanning tunneling spectroscopy (STS) studies reveal that the interflat-band spacing and bandgap of CrBr3 can be continuously tuned by 120 and 240 meV, respectively, via electrostatic injection of carriers into the hybrid CrBr3/graphene system. This can be attributed to the self-screening of CrBr3 arising from the gate-induced carriers injected into CrBr3, which dominates over the weakened remote screening of the graphene substrate due to the decreased carrier density in graphene. Precise tuning of the spin-correlated flat-band states and bandgap in 2D magnets via electrostatic modulation of Coulomb interactions not only provides effective strategies for optimizing the spin transport channels but also may exert a crucial influence on the exchange energy and spin-wave gap, which could raise the critical temperature for magnetic order.
Collapse
Affiliation(s)
- Pin Lyu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Joachim Sødequist
- Department of Physics, Computational Atomic-Scale Materials Design (CAMD), Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
| | - Xiaoyu Sheng
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
| | - Zhizhan Qiu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| | - Anton Tadich
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
- Australian Synchrotron, Clayton, Victoria 3168, Australia
| | - Qile Li
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Mark T Edmonds
- ARC Centre for Future Low Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Meng Zhao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Jesús Redondo
- Institute of Physics of the Czech Academy of Sciences, Cukrovarnicka 10, 162 00 Prague 6, Czech Republic
- Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00 Prague, Czech Republic
| | - Martin Švec
- Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 180 00 Prague, Czech Republic
| | - Peng Song
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798,Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798,Singapore
| | - Thomas Olsen
- Department of Physics, Computational Atomic-Scale Materials Design (CAMD), Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
| | - Jiong Lu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
| |
Collapse
|
6
|
Ren H, Xiang G. Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2378. [PMID: 37630963 PMCID: PMC10459406 DOI: 10.3390/nano13162378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 08/09/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
Collapse
Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
| |
Collapse
|
7
|
Hu Y, Hu X, Wang Y, Lu C, Krasheninnikov AV, Chen Z, Sun L. Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX 3 (X = I, Br)/2D Metal Contacts. J Phys Chem Lett 2023; 14:2807-2815. [PMID: 36912604 DOI: 10.1021/acs.jpclett.3c00354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
CrX3 (X = I, Br) monolayers exhibit outstanding performance in spintronic devices. However, the Schottky barrier at the CrX3/electrode interface severely impedes the charge injection efficiency. Herein, we propose two-dimensional (2D) metals as electrodes to form van der Waals (vdW) contact with CrX3 monolayers and systematically explore the contact properties of CrX3/metal by density functional theory (DFT) calculations. The results demonstrate that the strongly suppressed Fermi level pinning (FLP) effect and the wide-range tunable Schottky barrier can be achieved in CrX3/metal contacts. Specifically, the n-type and the p-type Schottky contacts can be realized in CrX3/metal contacts by choosing 2D metal electrodes with different work functions. Importantly, the pinning factors for CrX3/metal contacts are exceptionally larger than other commonly studied 2D semiconductors, indicating the strongly suppressed FLP in CrX3/metal contacts, which leads to the wide-range tunable Schottky barrier. Our findings provide guidance to the choice of electrodes and promote the development of CrX3-based spin devices.
Collapse
Affiliation(s)
- Yanmei Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Yifeng Wang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Chunhua Lu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan, Puerto Rico 00931, United States
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China
| |
Collapse
|
8
|
Yang J, Li J, Bahrami A, Nasiri N, Lehmann S, Cichocka MO, Mukherjee S, Nielsch K. Wafer-Scale Growth of Sb 2Te 3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:54034-54043. [PMID: 36383043 DOI: 10.1021/acsami.2c16150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3 film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in. wafer was achieved by atomic layer deposition at 80 °C using (Et3Si)2Te and SbCl3 as precursors. The processed photodetectors have a low dark current (∼20 pA), a high responsivity of (∼4.3 A/W at 405 nm and ∼150 mA/W at 1550 nm), a peak detectivity of ∼1.65 × 1014 Jones, and a quick rise time of ∼98 μs under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II band gap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance and self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.
Collapse
Affiliation(s)
- Jun Yang
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
| | - Jianzhu Li
- School of Materials Science and Engineering, Harbin Institute of Technology (Weihai), West Road 2, Weihai, Shandong264209, China
| | - Amin Bahrami
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Noushin Nasiri
- School of Engineering, Faculty of Science and Engineering, Macquarie University, Sydney, New South Wales2109, Australia
| | - Sebastian Lehmann
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Magdalena Ola Cichocka
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Samik Mukherjee
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Kornelius Nielsch
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
| |
Collapse
|
9
|
Zhou X, Wang Z, Zhu H, Liu Z, Hou Y, Guo D, Zhong D. Epitaxial growth and electronic properties of an antiferromagnetic semiconducting VI 2 monolayer. NANOSCALE 2022; 14:10559-10565. [PMID: 35833619 DOI: 10.1039/d2nr02367a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The van der Waals materials down to the monolayer (ML) limit provide a fertile platform for exploring low-dimensional magnetism and developing the novel applications of spintronics. Among them, due to the absence of the net magnetic moment, antiferromagnetic (AFM) materials have received much less attention than ferromagnetic ones. Here, by combining scanning tunneling microscopy and state-of-the-art first-principles calculations, we investigate the preparation, and electronic and magnetic properties of a vanadium(II) iodide (VI2) ML. Single-layer VI2 has been grown by molecular beam epitaxy on Au(111) surfaces. A band gap of 2.8 eV is revealed, indicating the semiconducting nature of the VI2 ML. Vanadium and iodine vacancy defects give rise to additional feature states within the bandgap. A typical 120° AFM spin ordering is maintained in the ML limit of VI2, as revealed by the first-principles calculations. Besides, the AFM coupling is greatly enhanced by slightly decreasing lattice constants. Our work provides an ideal platform for further studying two-dimensional magnetism with non-collinear AFM ordering and for investigating the possibility of realizing the spin Hall effect in the ML limit.
Collapse
Affiliation(s)
- Xuhan Zhou
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Zhe Wang
- State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) and Department of Physics, Fudan University, Shanghai 200433, China
| | - Han Zhu
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Zizhao Liu
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yusheng Hou
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Donghui Guo
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Dingyong Zhong
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
- State Key Laboratory for Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| |
Collapse
|
10
|
Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
Collapse
Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| |
Collapse
|
11
|
Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 68] [Impact Index Per Article: 34.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
Collapse
Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
| |
Collapse
|
12
|
Kistanov AA, Shcherbinin SA, Botella R, Davletshin A, Cao W. Family of Two-Dimensional Transition Metal Dichlorides: Fundamental Properties, Structural Defects, and Environmental Stability. J Phys Chem Lett 2022; 13:2165-2172. [PMID: 35227061 PMCID: PMC8919257 DOI: 10.1021/acs.jpclett.2c00367] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
A large number of novel two-dimensional (2D) materials are constantly being discovered and deposited in databases. Consolidated implementation of machine learning algorithms and density functional theory (DFT)-based predictions have allowed the creation of several databases containing an unimaginable number of 2D samples. As the next step in this chain, the investigation leads to a comprehensive study of the functionality of the invented materials. In this work, a family of transition metal dichlorides have been screened out for systematic investigation of their structural stability, fundamental properties, structural defects, and environmental stability via DFT-based calculations. The work highlights the importance of using the potential of the invented materials and proposes a comprehensive characterization of a new family of 2D materials.
Collapse
Affiliation(s)
- Andrey A. Kistanov
- Nano
and Molecular Systems Research Unit, University
of Oulu, Oulu 90014, Finland
| | - Stepan A. Shcherbinin
- Peter
the Great Saint Petersburg Polytechnical University, Saint Petersburg 195251, Russia
| | - Romain Botella
- Nano
and Molecular Systems Research Unit, University
of Oulu, Oulu 90014, Finland
| | - Artur Davletshin
- Center
for Subsurface Energy and the Environment, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Wei Cao
- Nano
and Molecular Systems Research Unit, University
of Oulu, Oulu 90014, Finland
| |
Collapse
|
13
|
Kezilebieke S, Vaňo V, Huda MN, Aapro M, Ganguli SC, Liljeroth P, Lado JL. Moiré-Enabled Topological Superconductivity. NANO LETTERS 2022; 22:328-333. [PMID: 34978831 PMCID: PMC8759081 DOI: 10.1021/acs.nanolett.1c03856] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
The search for artificial topological superconductivity has been limited by the stringent conditions required for its emergence. As exemplified by the recent discoveries of various correlated electronic states in twisted van der Waals materials, moiré patterns can act as a powerful knob to create artificial electronic structures. Here, we demonstrate that a moiré pattern between a van der Waals superconductor and a monolayer ferromagnet creates a periodic potential modulation that enables the realization of a topological superconducting state that would not be accessible in the absence of the moiré. The magnetic moiré pattern gives rise to Yu-Shiba-Rusinov minibands and periodic modulation of the Majorana edge modes that we detect using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Moiré patterns and, more broadly, periodic potential modulations are powerful tools to overcome the conventional constraints for realizing and controlling topological superconductivity.
Collapse
Affiliation(s)
- Shawulienu Kezilebieke
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
- Department
of Physics, Department of Chemistry, and Nanoscience Center, University of Jyväskylä, FI-40014 Jyväskylä, Finland
| | - Viliam Vaňo
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Md N. Huda
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Markus Aapro
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Somesh C. Ganguli
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Peter Liljeroth
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Jose L. Lado
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| |
Collapse
|
14
|
Bikaljević D, González-Orellana C, Peña-Díaz M, Steiner D, Dreiser J, Gargiani P, Foerster M, Niño MÁ, Aballe L, Ruiz-Gomez S, Friedrich N, Hieulle J, Jingcheng L, Ilyn M, Rogero C, Pascual JI. Noncollinear Magnetic Order in Two-Dimensional NiBr 2 Films Grown on Au(111). ACS NANO 2021; 15:14985-14995. [PMID: 34491033 PMCID: PMC8482757 DOI: 10.1021/acsnano.1c05221] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Indexed: 05/12/2023]
Abstract
Metal halides are a class of layered materials with promising electronic and magnetic properties persisting down to the two-dimensional limit. While most recent studies focused on the trihalide components of this family, the rather unexplored metal dihalides are also van der Waals layered systems with distinctive magnetic properties. Here we show that the dihalide NiBr2 grows epitaxially on a Au(111) substrate and exhibits semiconducting and magnetic behavior starting from a single layer. Through a combination of a low-temperature scanning-tunneling microscopy, low-energy electron diffraction, X-ray photoelectron spectroscopy, and photoemission electron microscopy, we identify two competing layer structures of NiBr2 coexisting at the interface and a stoichiometrically pure layer-by-layer growth beyond. Interestingly, X-ray absorption spectroscopy measurements revealed a magnetically ordered state below 27 K with in-plane magnetic anisotropy and zero-remanence in the single layer of NiBr2/Au(111), which we attribute to a noncollinear magnetic structure. The combination of such two-dimensional magnetic order with the semiconducting behavior down to the 2D limit offers the attractive perspective of using these films as ultrathin crystalline barriers in tunneling junctions and low-dimensional devices.
Collapse
Affiliation(s)
- Djuro Bikaljević
- CIC
nanoGUNE-BRTA, 20018 Donostia-San Sebastián, Spain
- Institute
of Physical Chemistry, University of Innsbruck, Innrain 52c, A-6020 Innsbruck, Austria
| | | | - Marina Peña-Díaz
- Centro
de Física de Materiales (CSIC/UPV-EHU), 20018 Donostia-San
Sebastián, Spain
| | - Dominik Steiner
- Institute
of Physical Chemistry, University of Innsbruck, Innrain 52c, A-6020 Innsbruck, Austria
| | - Jan Dreiser
- Paul
Scherrer Institut, Forschungsstrasse
111, CH-5232 Villigen, PSI, Switzerland
| | - Pierluigi Gargiani
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Michael Foerster
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Miguel Ángel Niño
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Lucía Aballe
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Sandra Ruiz-Gomez
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | | | | | - Li Jingcheng
- CIC
nanoGUNE-BRTA, 20018 Donostia-San Sebastián, Spain
| | - Maxim Ilyn
- Centro
de Física de Materiales (CSIC/UPV-EHU), 20018 Donostia-San
Sebastián, Spain
| | - Celia Rogero
- Centro
de Física de Materiales (CSIC/UPV-EHU), 20018 Donostia-San
Sebastián, Spain
- Donostia
International Physics Center DIPC, 20018 Donostia-San Sebastián, Spain
| | - José Ignacio Pascual
- CIC
nanoGUNE-BRTA, 20018 Donostia-San Sebastián, Spain
- Ikerbasque,
Basque Foundation for Science, 48013 Bilbao, Spain
| |
Collapse
|
15
|
Aapro M, Huda MN, Karthikeyan J, Kezilebieke S, Ganguli SC, Herrero HG, Huang X, Liljeroth P, Komsa HP. Synthesis and Properties of Monolayer MnSe with Unusual Atomic Structure and Antiferromagnetic Ordering. ACS NANO 2021; 15:13794-13802. [PMID: 34313424 PMCID: PMC8388122 DOI: 10.1021/acsnano.1c05532] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Accepted: 07/22/2021] [Indexed: 05/28/2023]
Abstract
Transition metal chalcogenides (TMCs) are a large family of 2D materials that are currently attracting intense interest. TMCs with 3d transition metals provide opportunities for introducing magnetism and strong correlations into the material with manganese standing out as a particularly attractive option due to its large magnetic moment. Here we report on the successful synthesis of monolayer manganese selenide on a NbSe2 substrate. Using scanning tunneling microscopy and spectroscopy experiments and global structure prediction calculations at the density functional theory level, we identify the atomic structure and magnetic and electronic properties of the layered Mn2Se2 phase. The structure is similar to the layered bulk phase of CuI or a buckled bilayer of h-BN. Interestingly, our results suggest that the monolayer is antiferromagnetic, but with an unusual out-of-plane ordering that results in two ferromagnetic planes.
Collapse
Affiliation(s)
- Markus Aapro
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Md. Nurul Huda
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Jeyakumar Karthikeyan
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
- Rajiv
Gandhi Institute of Petroleum Technology, Jais, Amethi 229304, Uttar Pradesh, India
| | | | - Somesh C. Ganguli
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | | | - Xin Huang
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Peter Liljeroth
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
| | - Hannu-Pekka Komsa
- Department
of Applied Physics, Aalto University, 00076 Aalto, Finland
- Microelectronics
Research Unit, University of Oulu, 90014 Oulu, Finland
| |
Collapse
|