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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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Wang X, Chen A, Wu X, Zhang J, Dong J, Zhang L. Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution. NANO-MICRO LETTERS 2024; 16:163. [PMID: 38546814 PMCID: PMC10978568 DOI: 10.1007/s40820-024-01378-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 02/17/2024] [Indexed: 04/01/2024]
Abstract
In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials. In this review, we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional, one-dimensional and two-dimensional TMC materials. The effects of substituting elements, substitution ratios, and substitution positions on the structures and morphologies of resulting material are discussed. The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided, emphasizing the role of atomic substitution in achieving these advancements. Finally, challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.
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Affiliation(s)
- Xuan Wang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Akang Chen
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - XinLei Wu
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jiatao Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
| | - Leining Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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López-Galán OA, Boll T, Nogan J, Chassaing D, Welle A, Heilmaier M, Ramos M. One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods. Sci Rep 2024; 14:7104. [PMID: 38531954 DOI: 10.1038/s41598-024-57243-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 03/15/2024] [Indexed: 03/28/2024] Open
Abstract
We present the fabrication of a MoS2-xSex thin film from a co-sputtering process using MoS2 and MoSe2 commercial targets with 99.9% purity. The sputtering of the MoS2 and MoSe2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS2-xSex phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS2-xSex thin film, indicated by a blue shift in the A1g and E1g vibrational modes at 355 cm-1 and 255 cm-1, respectively. This work is complemented by computing the thermodynamic stability of a MoS2-xSex phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials' fabrication and target latent applications of such structures.
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Affiliation(s)
- Oscar A López-Galán
- Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
- Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany.
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro #450 N, Ciudad Juárez, 32310, CHIH, México.
| | - Torben Boll
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - John Nogan
- Sandia National Laboratories, Center for Integrated Nanotechnologies (CINT), 1101 Eubank Bldg. SE, Albuquerque, NM, 87110, USA
| | - Delphine Chassaing
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Alexander Welle
- Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
- Institute of Functional Interfaces (IFG), Karlsruhe Institute of Technology (KIT), Hermann-von Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany
| | - Martin Heilmaier
- Institute for Applied Materials and Materials Science (IAM-WK), Karlsruhe Institute of Technology (KIT), Engelbert-Arnold-Str. 4, 76131, Karlsruhe, Germany
| | - Manuel Ramos
- Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro #450 N, Ciudad Juárez, 32310, CHIH, México.
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Han J, Zhao S, Liu X, Wang Z, Yan H, Lin H. Robust and Efficient Carbon-Based Planar Perovskite Solar Cells with a CsPbBr 3-MoS 2 Hybrid Absorber. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55895-55902. [PMID: 37989257 DOI: 10.1021/acsami.3c13940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Optical response improvement and hole transport/extraction enhancement are critical to enhancing the power conversion efficiency (PCE) of carbon electrode-based perovskite solar cells (C-PSCs) with an absorber of CsPbBr3. In this study, a multifunctional optimization method by embedding MoS2 nanosheets in CsPbBr3 bulk to construct a perovskite-nanosheet hybrid structure was presented. A CsPbBr3-MoS2 hybrid film was fabricated by two-step spin-coating the precursor solutions of PbBr2 and CsBr-MoS2 under an ambient atmosphere, where the aqueous solution with highly distributed MoS2 nanosheets was applied as a solvent of the hybrid precursor solution. MoS2 nanosheets were utilized as a p-type modifier and extra absorber to hybridize with CsPbBr3 for improving the CsPbBr3-carbon interface and light absorption ability of the perovskite layer. As expected, the optical response ability, absorber film quality, and carrier separation/extraction/transport properties of C-PSCs were enhanced significantly by embedding MoS2 nanosheets in CsPbBr3 film, which resulted in enhanced C-PSCs properties. Finally, the C-PSCs with the structure of FTO/SnO2/CsPbBr3-MoS2/C presented a champion PCE of 7.87% (active area: 1 cm2), which demonstrated excellent ambient and operational stability. This study provides an efficient method for constructing ultrastable C-PSCs by hybridizing perovskite and nanosheets.
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Affiliation(s)
- Jianhua Han
- College of Science, Civil Aviation University of China, Tianjin 300300, China
| | - Shuang Zhao
- College of Aeronautical Engineering, Civil Aviation University of China, Tianjin 300300, China
| | - Xuanling Liu
- State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zengyi Wang
- College of Aeronautical Engineering, Civil Aviation University of China, Tianjin 300300, China
| | - Huiyu Yan
- College of Science, Civil Aviation University of China, Tianjin 300300, China
| | - Hong Lin
- State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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Wang L, Xu F, Zhang C, Wageh S, Al-Hartomy OA, Zhang B, Yang T, Zhang H. Chemiresistive gas sensor based on Mo 0.5W 0.5S 2 alloy nanoparticles with good selectivity and ppb-level limit of detection to ammonia. Mikrochim Acta 2023; 190:283. [PMID: 37415040 DOI: 10.1007/s00604-023-05843-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Accepted: 05/18/2023] [Indexed: 07/08/2023]
Abstract
Transition metal dichalcogenides (TMDs) are promising materials for chemiresistive gas sensor, while TMD alloys (two chalcogenide or/and metal elements) with tunable electronic structures have drawn little attention in gas sensing. Herein, Mo0.5W0.5S2 alloy nanoparticles (NPs) were prepared by a facile sonication exfoliation method and then tested for ammonia sensing. The crystal structure, geometric morphology, and elemental composition of Mo0.5W0.5S2 NPs were investigated. The gas sensing measurements demonstrated Mo0.5W0.5S2 NPs with good response to ammonia at 80 °C with a limit of detection down to 500 part per billion (ppb). The sensor also displayed good stability as well as superb selectivity to ammonia in the presence of interferences, such as methanol, acetone, benzene, and cyclohexane. The theoretical calculations revealed Mo and W atoms at edges (such as Mo0.5W0.5S2 (010)) of sheet-like NPs as the active sites for ammonia adsorption. Electrons donated by the adsorbed ammonia were combined with holes in p-type Mo0.5W0.5S2 NPs, and the concentration of the main charge carrier was reduced, resulting in resistance enhancement.
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Affiliation(s)
- Lude Wang
- School of Artificial Intelligence and Information Technology, Nanjing University of Chinese Medicine, No. 138 Xianling Rd, Nanjing, 210023, China
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Feicui Xu
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Chen Zhang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Bin Zhang
- Otolaryngology Department and Biobank of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| | - Tingqiang Yang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
| | - Han Zhang
- School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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Silva A, Cao J, Polcar T, Kramer D. Design Guidelines for Two-Dimensional Transition Metal Dichalcogenide Alloys. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2022; 34:10279-10290. [PMID: 36530938 PMCID: PMC9753562 DOI: 10.1021/acs.chemmater.2c01390] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 11/14/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) materials and transition metal dichalcogenides (TMD) in particular are at the forefront of nanotechnology. To tailor their properties for engineering applications, alloying strategies-used successfully for bulk metals in the last century-need to be extended to this novel class of materials. Here we present a systematic analysis of the phase behavior of substitutional 2D alloys in the TMD family on both the metal and the chalcogenide site. The phase behavior is quantified in terms of a metastability metric and benchmarked against systematic computational screening of configurational energy landscapes from First-Principles. The resulting Pettifor maps can be used to identify broad trends across chemical spaces and as starting point for setting up rational search strategies in phase space, thus allowing for targeted computational analysis of properties on likely thermodynamically stable compounds. The results presented here also constitute a useful guideline for synthesis of binary metal 2D TMDs alloys via a range of synthesis techniques.
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Affiliation(s)
- Andrea Silva
- Faculty
of Engineering and Physical Sciences, University
of Southampton, University Road, SO17 1BJ Southampton, United Kingdom
- National
Centre for Advanced Tribology Study, University Road, SO17 1BJ Southampton, United Kingdom
| | - Jiangming Cao
- Faculty
of Mechanical and Civil Engineering, Helmut-Schmidt-Univeristy, Holstenhofweg 85, 22043 Hamburg, Germany
| | - Tomas Polcar
- Faculty
of Engineering and Physical Sciences, University
of Southampton, University Road, SO17 1BJ Southampton, United Kingdom
- Advanced
Materials Group, Faculty of Electrical Engineering, Czech Technical University in Prague (CTU), Karlovo Náměstí
13, 12135 Prague, Czech Republic
| | - Denis Kramer
- Faculty
of Engineering and Physical Sciences, University
of Southampton, University Road, SO17 1BJ Southampton, United Kingdom
- Faculty
of Mechanical and Civil Engineering, Helmut-Schmidt-Univeristy, Holstenhofweg 85, 22043 Hamburg, Germany
- Department
of Heterogeneous Catalysis, Helmholtz-Zentrum
Hereon, Max-Planck-Strasse
1, 21502 Geesthacht, Germany
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7
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Özuğur Uysal B, Nayır Ş, Açba M, Çıtır B, Durmaz S, Koçoğlu Ş, Yıldız E, Pekcan Ö. 2D Materials (WS 2, MoS 2, MoSe 2) Enhanced Polyacrylamide Gels for Multifunctional Applications. Gels 2022; 8:gels8080465. [PMID: 35892724 PMCID: PMC9330576 DOI: 10.3390/gels8080465] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 07/06/2022] [Accepted: 07/07/2022] [Indexed: 02/04/2023] Open
Abstract
Multifunctional polymer composite gels have attracted attention because of their high thermal stability, conductivity, mechanical properties, and fast optical response. To enable the simultaneous incorporation of all these different functions into composite gels, the best doping material alternatives are two-dimensional (2D) materials, especially transition metal dichalcogenides (TMD), which have been used in so many applications recently, such as energy storage units, opto-electronic devices and catalysis. They have the capacity to regulate optical, electronic and mechanical properties of basic molecular hydrogels when incorporated into them. In this study, 2D materials (WS2, MoS2 and MoSe2)-doped polyacrylamide (PAAm) gels were prepared via the free radical crosslinking copolymerization technique at room temperature. The gelation process and amount of the gels were investigated depending on the optical properties and band gap energies. Band gap energies of composite gels containing different amounts of TMD were calculated and found to be in the range of 2.48–2.84 eV, which is the characteristic band gap energy range of promising semiconductors. Our results revealed that the microgel growth mechanism and gel point of PAAm composite incorporated with 2D materials can be significantly tailored by the amount of 2D materials. Furthermore, tunable band gap energies of these composite gels are crucial for many applications such as biosensors, cartilage repair, drug delivery, tissue regeneration, wound dressing. Therefore, our study will contribute to the understanding of the correlation between the optical and electronic properties of such composite gels and will help to increase the usage areas so as to obtain multifunctional composite gels.
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Affiliation(s)
- Bengü Özuğur Uysal
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
- Correspondence: ; Tel.: +90-2125336532 (ext. 1345)
| | - Şeyma Nayır
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
- Faculty of Science and Letters, Istanbul Technical University, Maslak, Istanbul 34469, Turkey
| | - Melike Açba
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
| | - Betül Çıtır
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
| | - Sümeyye Durmaz
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
| | - Şevval Koçoğlu
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
| | - Ekrem Yıldız
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
| | - Önder Pekcan
- Faculty of Engineering and Natural Sciences, Kadir Has University, Cibali, Fatih, Istanbul 34083, Turkey; (Ş.N.); (M.A.); (B.Ç.); (S.D.); (Ş.K.); (E.Y.); (Ö.P.)
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Hayashi K, Kataoka M, Sato S. Epitaxial Growth of SnS 2 Ribbons on a Au-Sn Alloy Seed Film Surface. J Phys Chem Lett 2022; 13:6147-6152. [PMID: 35762750 DOI: 10.1021/acs.jpclett.2c00906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional metal chalcogenide film has attracted considerable interest for its use as an emerging device material for nanoelectronics. The film has been synthesized by various methods such as chemical vapor deposition, molecular beam epitaxy, and thermal vapor sulfurization. In this study, we took a new approach to synthesize tin disulfide (SnS2) by using Au-Sn alloy film as a metal seed deposited on a sapphire substrate. Multilayer SnS2 films were formed in a ribbon shape on (111)-oriented Au film and were aligned in the directions of threefold rotational symmetry. Furthermore, the SnS2 was found to have an epitaxial relationship relative to the Au film and the sapphire substrate as follows: SnS2[2̅110] || Au[101̅] || Al2O3[011̅0]. The segregation of grains consisting of a Sn-rich phase on the Au film surface and the subsequent sulfurization of these grains can be the key to the epitaxial SnS2 ribbon formation.
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Affiliation(s)
- Kenjiro Hayashi
- Fujitsu Limited, 4-1-1 kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Masako Kataoka
- Fujitsu Limited, 4-1-1 kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
| | - Shintaro Sato
- Fujitsu Limited, 4-1-1 kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
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10
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Ren Y, Zhang L, Zhu X, Li H, Dong Q, Liu S. Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:254002. [PMID: 35358958 DOI: 10.1088/1361-648x/ac6309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Accepted: 03/31/2022] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.
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Affiliation(s)
- Yizhang Ren
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ling Zhang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Xukun Zhu
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Qizhi Dong
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
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11
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Xia Y, Wu Z, Qin Z, Chen F, Lv C, Zhang M, Shaymurat T, Duan H. Wool-Based Carbon Fiber/MoS 2 Composite Prepared by Low-Temperature Catalytic Hydrothermal Method and Its Application in the Field of Gas Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1105. [PMID: 35407223 PMCID: PMC9000424 DOI: 10.3390/nano12071105] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/07/2022] [Revised: 03/19/2022] [Accepted: 03/20/2022] [Indexed: 12/24/2022]
Abstract
Under the background of the Paris Agreement on reducing greenhouse gases, waste wools were converted into wool carbon fiber (WCF) and WCF-MoS2 composites by low-temperature catalytic hydrothermal carbonization. Their structures and gas-sensing performances were studied for the first time. Due to the existence of heterojunctions, the responses of the WCF-MoS2 composite to the five analytes were 3-400 times those of MoS2 and 2-11 times those of WCF. Interestingly, because of the N, P, and S elements contained in wools, the WCF prepared by the hydrothermal method was realized the doping of N, P, and S, which caused the sensing curves of WCF to have different shapes for different analytes. This characteristic was also well demonstrated by the WCF-MoS2 composite, which inspired us to realize the discriminative detection only by a single WCF-MoS2 sensor and image recognition technology. What's more, the WCF-MoS2 composite also showed a high sensitivity, a high selectivity, and a rapid response to NH3. The response time and the recovery time to 3 ppm NH3 were about 16 and 5 s, respectively. The detection of limit of WCF-MoS2 for NH3 was 19.1 ppb. This work provides a new idea for the development of sensors and the resource utilization of wool waste.
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Affiliation(s)
- Yidan Xia
- Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China; (Y.X.); (H.D.)
| | - Zhaofeng Wu
- Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China; (Y.X.); (H.D.)
| | - Zhangjie Qin
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China; (Z.Q.); (F.C.); (C.L.); (M.Z.)
| | - Fengjuan Chen
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China; (Z.Q.); (F.C.); (C.L.); (M.Z.)
| | - Changwu Lv
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China; (Z.Q.); (F.C.); (C.L.); (M.Z.)
| | - Min Zhang
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China; (Z.Q.); (F.C.); (C.L.); (M.Z.)
| | - Talgar Shaymurat
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China;
| | - Haiming Duan
- Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China; (Y.X.); (H.D.)
- School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China; (Z.Q.); (F.C.); (C.L.); (M.Z.)
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12
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Lange S, Giesl F, Naumann V, Hagendorf C, Eraerds P. Exfoliation Methods for Compositional and Electronic Characterization of Interfacial Mo (Se
x
,S
y
) in Cu (In,Ga)(Se,S)
2
Solar Cells by X‐ray and UV Photoelectron Spectroscopy. SURF INTERFACE ANAL 2022. [DOI: 10.1002/sia.7081] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Stefan Lange
- Fraunhofer Center for Silicon Photovoltaics CSP Germany
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13
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Gao C, Yang X, Jiang M, Chen L, Chen Z, Singh CV. Machine learning-enabled band gap prediction of monolayer transition metal chalcogenide alloys. Phys Chem Chem Phys 2022; 24:4653-4665. [PMID: 35133367 DOI: 10.1039/d1cp05847a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Monolayer transition metal dichalcogenide (TMD) alloys with tunable direct band gaps have promising applications in nanoelectronics and optoelectronics. The composition-dependent band gaps of ternary, quaternary and quinary monolayer TMD alloys have been systematically studied combining density functional theory and machine learning models in the present study. The excellent agreement between the DFT-calculated band gaps and the ML-predicted values for the training, validation and test datasets demonstrates the accuracy of our machine learning based on a neural network model. It is found that the band gap bowing parameter is closely related to the difference between the band gaps of the endpoint material compositions of the monolayer TMD alloy and increases with increasing band gap difference. The band gap bowing effects of monolayer TMD alloys obtained by mixing different transition metals are attributed to the conduction band minimum positions, while those of monolayer TMD alloys obtained by mixing different chalcogen atoms are dominated by the valence band maximum positions. This study shows that monolayer TMD alloys with tunable direct band gaps can provide new opportunities for band gap engineering, as well as electronic and optoelectronic applications.
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Affiliation(s)
- Chan Gao
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada. .,Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China
| | - Xiaoyong Yang
- Department of Materials Science and Engineering, KTH Royal Institute of Technology, Stockholm, SE-100 44, Sweden
| | - Ming Jiang
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
| | - Lixin Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
| | - Zhiwen Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
| | - Chandra Veer Singh
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada. .,Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON M5S 3G8, Canada
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14
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Pelaez-Fernandez M, Lin YC, Suenaga K, Arenal R. Optoelectronic Properties of Atomically Thin Mo xW (1-x)S 2 Nanoflakes Probed by Spatially-Resolved Monochromated EELS. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3218. [PMID: 34947566 PMCID: PMC8708971 DOI: 10.3390/nano11123218] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2021] [Revised: 11/10/2021] [Accepted: 11/16/2021] [Indexed: 11/17/2022]
Abstract
Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1-x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.
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Affiliation(s)
- Mario Pelaez-Fernandez
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain;
- Laboratorio de Microscopias Avanzadas, Universidad de Zaragoza, Calle Mariano Esquillor, 50018 Zaragoza, Spain
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan;
| | - Kazu Suenaga
- The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Osaka 567-0047, Japan;
| | - Raul Arenal
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain;
- Laboratorio de Microscopias Avanzadas, Universidad de Zaragoza, Calle Mariano Esquillor, 50018 Zaragoza, Spain
- ARAID Fundation, 50018 Zaragoza, Spain
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15
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Wei Z, Tang J, Li X, Chi Z, Wang Y, Wang Q, Han B, Li N, Huang B, Li J, Yu H, Yuan J, Chen H, Sun J, Chen L, Wu K, Gao P, He C, Yang W, Shi D, Yang R, Zhang G. Wafer-Scale Oxygen-Doped MoS 2 Monolayer. SMALL METHODS 2021; 5:e2100091. [PMID: 34927920 DOI: 10.1002/smtd.202100091] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 02/26/2021] [Indexed: 06/14/2023]
Abstract
Monolayer MoS2 is an emergent 2D semiconductor for next-generation miniaturized and flexible electronics. Although the high-quality monolayer MoS2 is already available at wafer scale, doping of it uniformly remains an unsolved problem. Such doping is of great importance in view of not only tailoring its properties but also facilitating many potential large-scale applications. In this work, the uniform oxygen doping of 2 in wafer-scale monolayer MoS2 (MoS2- x Ox ) with tunable doping levels is realized through an in situ chemical vapor deposition process. Interestingly, ultrafast infrared spectroscopy measurements and first-principles calculations reveal a reduction of bandgaps of monolayer MoS2- x Ox with increased oxygen-doping levels. Field-effect transistors and logic devices are also fabricated based on these wafer-scale MoS2- x Ox monolayers, and excellent electronic performances are achieved, exhibiting promise of such doped MoS2 monolayers.
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Affiliation(s)
- Zheng Wei
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuanyi Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhen Chi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yu Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hua Yu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiahao Yuan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiatao Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Lan Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Kehui Wu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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16
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Vallinayagam M, Posselt M, Chandra S. Electronic structure and thermoelectric properties of Mo-based dichalcogenide monolayers locally and randomly modified by substitutional atoms. RSC Adv 2020; 10:43035-43044. [PMID: 35514882 PMCID: PMC9058219 DOI: 10.1039/d0ra08463h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Accepted: 11/18/2020] [Indexed: 12/02/2022] Open
Abstract
Density functional theory and Boltzmann transport equations are used to investigate electronic band structure and thermoelectric (TE) properties of different two-dimensional (2D) materials containing Mo, S, Nb, Se, and Te. In MoS2-based monolayers (MLs) the substitution of S atoms by Te atoms up to the concentration of 12.5 at% leads to a more significant change of the band structure than in the corresponding case with Se atoms. In particular, the bandgap is reduced. At a high concentration of Se or Te the electronic structure becomes more similar to that of the SeMoS or TeMoS Janus layers, and the MoSe2 or MoTe2 MLs. It is found that local and random introduction of substitutional Se or Te atoms yields not very different results. The substitution of Mo by Nb, at the concentration of 2.1 at% leads to hole levels. The thermoelectric properties of the considered 2D materials are quantified by the Seebeck coefficient and thermoelectric figure of merit. The two characteristics are determined for different levels of p- or n-doping of the MLs and for different temperatures. Compared to the pristine MoS2 ML, Te substitutional atoms cause more changes of the thermoelectric properties than Se atoms. However, MLs with Se substitutional atoms show a high thermoelectric figure of merit in a broader range of possible p- or n-doping levels. In most cases, the maximum thermoelectric figure of merit is about one, both in p- and n-type materials, and for temperatures between 300 and 1200 K. This is not only found for MoS2-based MLs with substitutional atoms but also for the Janus layers and for MoSe2 or MoTe2 MLs. Interestingly, for MLs with one Nb as well as two or four Te substitutional atoms the highest values of the TE figure of merit of 1.2 and 1.40, respectively, are obtained at a temperature of 1200 K. Controlling electronic and thermoelectric properties of MoS2 monolayers by changing concentration of Se and Te chalcogenide.![]()
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Affiliation(s)
- M Vallinayagam
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstraße 400 01328 Dresden Germany .,Technische Universität Dresden 01062 Dresden Germany
| | - M Posselt
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstraße 400 01328 Dresden Germany
| | - S Chandra
- Materials Science Group, Indira Gandhi Centre for Atomic Research, HBNI Kalpakkam 603102 Tamil Nadu India
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17
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Mosconi D, Kosmala T, Lunardon M, Neyman A, Bar-Sadan M, Agnoli S, Granozzi G. One-pot synthesis of MoS 2(1-x)Se 2x on N-doped reduced graphene oxide: tailoring chemical and structural properties for photoenhanced hydrogen evolution reaction. NANOSCALE ADVANCES 2020; 2:4830-4840. [PMID: 36132882 PMCID: PMC9419742 DOI: 10.1039/d0na00375a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Accepted: 08/28/2020] [Indexed: 06/16/2023]
Abstract
In this work we designed a one-pot solvothermal synthesis of MoS2(1-x)Se2x nanosheets directly grown on N-doped reduced graphene oxide (hereafter N-rGO). We optimized the synthesis conditions to control the Se : S ratio, with the aim of tailoring the optoelectronic properties of the resulting nanocomposites for their use as electro- and photoelectro-catalysts in the hydrogen evolution reaction (HER). The synthesis protocol made use of ammonium tetrathiomolybdate (ATM) as MoS2 precursor and dimethyl diselenide (DMDSe) as selenizing agent. By optimizing growth conditions and post-annealing treatments, we produced either partially amorphous or highly crystalline chalcogen-defective electrocatalysts. All samples were tested for the HER in acidic environment, and the best performing among them, for the photoassisted HER. In low crystallinity samples, the introduction of Se is not beneficial for promoting the catalytic activity, and MoS2/N-rGO was the most active electrocatalyst. On the other hand, after the post-annealing treatment and the consequent crystallization of the materials, the best HER performance was obtained for the sample with x = 0.38, which also showed the highest enhancement upon light irradiation.
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Affiliation(s)
- Dario Mosconi
- Dipartimento di Scienze Chimiche, Università di Padova Via Marzolo 1 35131 Padova Italy
| | - Tomasz Kosmala
- Dipartimento di Scienze Chimiche, Università di Padova Via Marzolo 1 35131 Padova Italy
| | - Marco Lunardon
- Dipartimento di Scienze Chimiche, Università di Padova Via Marzolo 1 35131 Padova Italy
| | - Alevtina Neyman
- Department of Chemistry, Ben-Gurion University of the Negev Beer-Sheva Israel
| | - Maya Bar-Sadan
- Department of Chemistry, Ben-Gurion University of the Negev Beer-Sheva Israel
| | - Stefano Agnoli
- Dipartimento di Scienze Chimiche, Università di Padova Via Marzolo 1 35131 Padova Italy
| | - Gaetano Granozzi
- Dipartimento di Scienze Chimiche, Università di Padova Via Marzolo 1 35131 Padova Italy
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18
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Zhang L, Yang T, He X, Zhang W, Vinai G, Tang CS, Yin X, Torelli P, Feng YP, Wong PKJ, Wee ATS. Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys. ACS NANO 2020; 14:11140-11149. [PMID: 32794699 DOI: 10.1021/acsnano.0c02124] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy, we investigate the growth of 2D vanadium-molybdenum diselenide alloys, VxMo1-xSe2, on highly oriented pyrolytic graphite and unveil their structural, chemical, and electronic integrities via measurements by scanning tunneling microscopy/spectroscopy, synchrotron X-ray photoemission, and X-ray absorption spectroscopy (XAS). Essentially, we found a critical value of x = ∼0.44, below which phase separation occurs and above which a homogeneous metallic phase is favored. Another observation is an effective increase in the density of mirror twin boundaries of constituting MoSe2 in the low V concentration regime (x ≤ 0.05). Density functional theory calculations support our experimental results on the thermal stability of 2D VxMo1-xSe2 alloys and suggest an H phase of the homogeneous alloys with alternating parallel V and Mo strips randomly in-plane stacked. Element-specific XAS of the 2D alloys, which clearly indicates quenched atomic multiplets similar to the case of 2H-VSe2, provides strong evidence for the H phase of the 2D alloys. This work provides a comprehensive understanding of the thermal stability, chemical state, and electronic structure of 2D VxMo1-xSe2 alloys, useful for the future design of 2D electronic devices.
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Affiliation(s)
- Lei Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Tong Yang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Xiaoyue He
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wen Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, P.R. China
| | - Giovanni Vinai
- Instituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. km 163.5, Trieste I-34149, Italy
| | - Chi Sin Tang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore
| | - Xinmao Yin
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore 117603, Singapore
| | - Piero Torelli
- Instituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park, S.S. km 163.5, Trieste I-34149, Italy
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
| | - Ping Kwan Johnny Wong
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, P.R. China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
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19
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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20
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Muhammad Z, Zhang B, Lv H, Shan H, Rehman ZU, Chen S, Sun Z, Wu X, Zhao A, Song L. Transition from Semimetal to Semiconductor in ZrTe 2 Induced by Se Substitution. ACS NANO 2020; 14:835-841. [PMID: 31860270 DOI: 10.1021/acsnano.9b07931] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional layered transition-metal telluride can build stable metallic, metastable metallic, or semimetallic polymorphic crystal structures with enormous technological and scientific applications. Herein the hexagonal structures of zirconium ditelluride (ZrTe2) and ZrTe2(1-x)Se2x (0 ≤ x ≤ 1) single crystals were selectively synthesized through the chemical vapor transport method. The electronic band structures were systematically studied through angle-resolved photoemission spectroscopy (ARPES) combined with first-principles density functional theory (DFT) calculations. The ARPES results suggested a clear electronic phase transition from a semimetal to a semiconductor in ZrTe2(1-x)Se2x with the x value changing. Compared with pristine ZrTe2, the valence band splitting in ZrTe2(1-x)Se2x decreased at the Γ point due to the reduction of the spin-orbit interaction, whereas an indirect band gap opened in the vicinity of the Fermi level with the increase in Se concentration. Our DFT calculations further confirmed that the substituted Se atoms on Te sites could affect the band structure of ZrTe2 to induce a distinct transition from semimetal to semiconductor, suggesting their high potential for valleytronics applications.
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Affiliation(s)
- Zahir Muhammad
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230029 , China
| | - Bo Zhang
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230029 , China
| | - Haifeng Lv
- CAS Key Laboratory of Materials for Energy Conservation, Synergetic Innovation Centre of Quantum Information & Quantum Physics, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering , University of Science and Technology of China , Hefei 230026 , China
| | - Huan Shan
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei 230026 , China
| | - Zia Ur Rehman
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230029 , China
| | - Shuangming Chen
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230029 , China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230029 , China
- CAS Center for Excellence in Superconducting Electronics (CENSE) , Shanghai 200050 , China
| | - Xiaojun Wu
- CAS Key Laboratory of Materials for Energy Conservation, Synergetic Innovation Centre of Quantum Information & Quantum Physics, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering , University of Science and Technology of China , Hefei 230026 , China
| | - Aidi Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale , University of Science and Technology of China , Hefei 230026 , China
| | - Li Song
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly coupled Quantum Matter Physics , University of Science and Technology of China , Hefei 230029 , China
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21
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Li Y, Jiang X, Fu Z, Huang Q, Wang GE, Deng WH, Wang C, Li Z, Yin W, Chen B, Xu G. Coordination assembly of 2D ordered organic metal chalcogenides with widely tunable electronic band gaps. Nat Commun 2020; 11:261. [PMID: 31937787 PMCID: PMC6959344 DOI: 10.1038/s41467-019-14136-8] [Citation(s) in RCA: 39] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2019] [Accepted: 12/12/2019] [Indexed: 01/20/2023] Open
Abstract
Engineering the band gap chemically by organic molecules is a powerful tool with which to optimize the properties of inorganic 2D materials. The obtained materials are however still limited by inhomogeneous compositions and properties at nanoscale and small adjustable band gap ranges. To overcome these problems in the traditional exfoliation and then organic modification strategy, an organic modification and then exfoliation strategy was explored in this work for preparing 2D organic metal chalcogenides (OMCs). Unlike the reported organically modified 2D materials, the inorganic layers of OMCs are fully covered by long-range ordered organic functional groups. By changing the electron-donating ability of the organic functional groups and the electronegativity of the metals, the band gaps of OMCs were varied by 0.83 eV and their conductivities were modulated by 9 orders of magnitude, which are 2 and 107 times higher than the highest values observed in the reported chemical methods, respectively.
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Affiliation(s)
- Yanzhou Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China
- University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing, 100049, China
| | - Xiaoming Jiang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China
| | - Zhihua Fu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China
| | - Qingqing Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China
- University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing, 100049, China
| | - Guan-E Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China
| | - Wei-Hua Deng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China
| | - Chen Wang
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Zhenzhu Li
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Wanjian Yin
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Banglin Chen
- Department of Chemistry, University of Texas at San Antonio, San Antonio, TX, USA
| | - Gang Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), 155 Yangqiao Road West, Fuzhou, Fujian, 350002, China.
- University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing, 100049, China.
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22
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Reduced Bipolar Conduction in Bandgap-Engineered n-Type Cu0.008Bi2(Te,Se)3 by Sulfur Doping. ENERGIES 2020. [DOI: 10.3390/en13020337] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Significant bipolar conduction of the carriers in Bi2Te3-based alloys occurs at high temperatures due to their narrow bandgaps. Therefore, at high temperatures, their Seebeck coefficients decrease, the bipolar thermal conductivities rapidly increase, and the thermoelectric figure of merit, zT, rapidly decreases. In this study, band modification of n-type Cu0.008Bi2(Te,Se)3 alloys by sulfur (S) doping, which could widen the bandgap, is investigated regarding carrier transport properties and bipolar thermal conductivity. The increase in bandgap by S doping is demonstrated by the Goldsmid–Sharp estimation. The bipolar conduction reduction is shown in the carrier transport characteristics and thermal conductivity. In addition, S doping induces an additional point-defect scattering of phonons, which decreases the lattice thermal conductivity. Thus, the total thermal conductivity of the S-doped sample is reduced. Despite the reduced power factor due to the unfavorable change in the conduction band, zT at high temperatures is increased by S doping with simultaneous reductions in bipolar and lattice thermal conductivity.
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23
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Zhou S, Ning J, Sun J, Srolovitz DJ. Composition-induced type I and direct bandgap transition metal dichalcogenides alloy vertical heterojunctions. NANOSCALE 2020; 12:201-209. [PMID: 31808497 DOI: 10.1039/c9nr08345f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
While members of the 2D semiconducting transition metal dichalcogenide (TMD) family MX2 (M = {Mo, W}, X = {S, Se}) are promising for device applications, stacked layer (vertical) heterojunctions exhibit features that make them inappropriate for light-emitting applications. Such vertical heterojunctions exhibit type II, rather than the preferred type I band alignment. Using density functional theory calculations, we identify the pseudo-binary and quaternary alloy composition range for which band alignment is type I. While broad regions of composition space lead to type I band alignment, most light-emitting devices require direct bandgaps. We demonstrate that by taking advantage of alloying and/or twisting between layers, a wide range of type I, direct bandgap stacked layer (vertical) heterojunctions are achievable. These results and the underlying method developed here provide new opportunities for TMD vertical heterojunction device optimization and opens the door to new classes of TMD vertical heterojunction device applications.
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Affiliation(s)
- Songsong Zhou
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA.
| | - Jinliang Ning
- Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA
| | - Jianwei Sun
- Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA
| | - David J Srolovitz
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA. and Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA and Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR
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24
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Vancsó P, Popov ZI, Pető J, Ollár T, Dobrik G, Pap JS, Hwang C, Sorokin PB, Tapasztó L. Transition Metal Chalcogenide Single Layers as an Active Platform for Single-Atom Catalysis. ACS ENERGY LETTERS 2019; 4:1947-1953. [PMID: 31763462 PMCID: PMC6866691 DOI: 10.1021/acsenergylett.9b01097] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2019] [Accepted: 07/09/2019] [Indexed: 05/31/2023]
Abstract
Among the main appeals of single-atom catalysts are the ultimate efficiency of material utilization and the well-defined nature of the active sites, holding the promise of rational catalyst design. A major challenge is the stable decoration of various substrates with a high density of individually dispersed and uniformly active monatomic sites. Transition metal chalcogenides (TMCs) are broadly investigated catalysts, limited by the relative inertness of their pristine basal plane. We propose that TMC single layers modified by substitutional heteroatoms can harvest the synergistic benefits of stably anchored single-atom catalysts and activated TMC basal planes. These solid-solution TMC catalysts offer advantages such as simple and versatile synthesis, unmatched active site density, and a stable and well-defined single-atom active site chemical environment. The unique features of heteroatom-doped two-dimensional TMC crystals at the origin of their catalytic activity are discussed through the examples of various TMC single layers doped with individual oxygen heteroatoms.
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Affiliation(s)
- Péter Vancsó
- Institute
of Technical Physics and Materials Science, Hungarian Academy of Sciences, Centre for Energy Research, 1121 Budapest, Hungary
| | - Zakhar I. Popov
- National
University of Science and Technology MISiS, 119049 Moscow, Russia
- Emanuel
Institute of Biochemical Physics RAS, 199339 Moscow, Russia
| | - János Pető
- Institute
of Technical Physics and Materials Science, Hungarian Academy of Sciences, Centre for Energy Research, 1121 Budapest, Hungary
| | - Tamás Ollár
- Institute
for Energy Security and Environmental Safety, Surface Chemistry and
Catalysis Department, Hungarian Academy
of Sciences, Centre for Energy Research, 1121 Budapest, Hungary
| | - Gergely Dobrik
- Institute
of Technical Physics and Materials Science, Hungarian Academy of Sciences, Centre for Energy Research, 1121 Budapest, Hungary
| | - József S. Pap
- Institute
for Energy Security and Environmental Safety, Surface Chemistry and
Catalysis Department, Hungarian Academy
of Sciences, Centre for Energy Research, 1121 Budapest, Hungary
| | - Chanyong Hwang
- Korea Research
Institute for Standards and Science, Daejeon 305340, South Korea
| | - Pavel B. Sorokin
- National
University of Science and Technology MISiS, 119049 Moscow, Russia
| | - Levente Tapasztó
- Institute
of Technical Physics and Materials Science, Hungarian Academy of Sciences, Centre for Energy Research, 1121 Budapest, Hungary
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25
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Lim YR, Han JK, Yoon Y, Lee JB, Jeon C, Choi M, Chang H, Park N, Kim JH, Lee Z, Song W, Myung S, Lee SS, An KS, Ahn JH, Lim J. Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1901405. [PMID: 31157462 DOI: 10.1002/adma.201901405] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2019] [Revised: 05/13/2019] [Indexed: 06/09/2023]
Abstract
Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1- x ) Se2 x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62 Se0.38 , MoS1.37 Se0.63 , MoS1.15 Se0.85 , and MoS0.46 Se1.54 alloys, as well as MoS2 and MoSe2 . Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2 , are unambiguously achieved.
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Affiliation(s)
- Yi Rang Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jin Kyu Han
- Department of Energy Conversion and Storage, Technical University of Denmark, Frederiksborgvej 399, 4000, Roskilde, Denmark
| | - Yeoheung Yoon
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jae-Bok Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Cheolho Jeon
- Nano-Surface Research Group, Korea Basic Science Institute, Daejeon, 302-333, Republic of Korea
| | - Min Choi
- Center of Molecular Modeling and Simulation, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Hyunju Chang
- Center of Molecular Modeling and Simulation, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Noejung Park
- Department of Physics, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Jung Hwa Kim
- School of Material Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Zonghoon Lee
- School of Material Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
- Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Ki-Seok An
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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26
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Zhang C, Wang W, Zhao M, Zhang J, Zha Z, Cheng S, Zheng H, Qian H. Construction of ZnxCd1−xS/Bi2S3 composite nanospheres with photothermal effect for enhanced photocatalytic activities. J Colloid Interface Sci 2019; 546:303-311. [DOI: 10.1016/j.jcis.2019.03.077] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2019] [Revised: 03/18/2019] [Accepted: 03/24/2019] [Indexed: 12/14/2022]
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27
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Meng Y, Wang T, Li Z, Qin Y, Lian Z, Chen Y, Lucking MC, Beach K, Taniguchi T, Watanabe K, Tongay S, Song F, Terrones H, Shi SF. Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6Se 1.4. NANO LETTERS 2019; 19:299-307. [PMID: 30556398 DOI: 10.1021/acs.nanolett.8b03918] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. Although WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2 xSe2(1- x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ∼6 meV and valley polarization as high as ∼60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the BN/WS0.6Se1.4/BN van der Waals heterostructure, which renders the otherwise optically silent Raman modes visible. In addition, the emerging Raman signals can be drastically enhanced by the resonant coupling to the 2s state of the monolayer WS0.6Se1.4 A exciton. The BN/WS2 xSe2(1- x)/BN van der Waals heterostructure with a tunable bandgap thus provides an exciting platform for exploring the valley degree of freedom and emerging excitonic physics in two-dimension.
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Affiliation(s)
- Yuze Meng
- College of Physics , Nanjing University , Nanjing , 210093 , P.R. China
- Department of Chemical and Biological Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Tianmeng Wang
- Department of Chemical and Biological Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Zhipeng Li
- Department of Chemical and Biological Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
- School of Chemistry and Chemical Engineering , Shanghai Jiao Tong University , Shanghai , 200240 , China
| | - Ying Qin
- School for Engineering of Matter, Transport and Energy , Arizona State University , Tempe , Arizona 85287 , United States
| | - Zhen Lian
- Department of Chemical and Biological Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Yanwen Chen
- Department of Chemical and Biological Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Michael C Lucking
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Kory Beach
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy , Arizona State University , Tempe , Arizona 85287 , United States
| | - Fengqi Song
- College of Physics , Nanjing University , Nanjing , 210093 , P.R. China
| | - Humberto Terrones
- Department of Physics, Applied Physics, and Astronomy , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
| | - Su-Fei Shi
- Department of Chemical and Biological Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
- Department of Electrical, Computer, and Systems Engineering , Rensselaer Polytechnic Institute , Troy , New York 12180 , United States
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28
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Luo P, Zhuge F, Zhang Q, Chen Y, Lv L, Huang Y, Li H, Zhai T. Doping engineering and functionalization of two-dimensional metal chalcogenides. NANOSCALE HORIZONS 2019; 4:26-51. [PMID: 32254144 DOI: 10.1039/c8nh00150b] [Citation(s) in RCA: 113] [Impact Index Per Article: 22.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the-art technology. To pursue ultimate performance, precisely controlled doping engineering of 2D MXs is desired for tailoring their physical and chemical properties in functional devices. In this review, we highlight the recent progress in the doping engineering of 2D MXs, covering that enabled by substitution, exterior charge transfer, intercalation and the electrostatic doping mechanism. A variety of novel doping engineering examples leading to Janus structures, defect curing effects, zero-valent intercalation and deliberately devised floating gate modulation will be discussed together with their intriguing application prospects. The choice of doping strategies and sources for functionalizing MXs will be provided to facilitate ongoing research in this field toward multifunctional applications.
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Affiliation(s)
- Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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29
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Wang Y, Mao J, Meng X, Yu L, Deng D, Bao X. Catalysis with Two-Dimensional Materials Confining Single Atoms: Concept, Design, and Applications. Chem Rev 2018; 119:1806-1854. [PMID: 30575386 DOI: 10.1021/acs.chemrev.8b00501] [Citation(s) in RCA: 340] [Impact Index Per Article: 56.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Two-dimensional materials and single-atom catalysts are two frontier research fields in catalysis. A new category of catalysts with the integration of both aspects has been rapidly developed in recent years, and significant advantages were established to make it an independent research field. In this Review, we will focus on the concept of two-dimensional materials confining single atoms for catalysis. The new electronic states via the integration lead to their mutual benefits in activity, that is, two-dimensional materials with unique geometric and electronic structures can modulate the catalytic performance of the confined single atoms, and in other cases the confined single atoms can in turn affect the intrinsic activity of two-dimensional materials. Three typical two-dimensional materials are mainly involved here, i.e., graphene, g-C3N4, and MoS2, and the confined single atoms include both metal and nonmetal atoms. First, we systematically introduce and discuss the classic synthesis methods, advanced characterization techniques, and various catalytic applications toward two-dimensional materials confining single-atom catalysts. Finally, the opportunities and challenges in this emerging field are featured on the basis of its current development.
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Affiliation(s)
- Yong Wang
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China.,State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Jun Mao
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China.,State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Xianguang Meng
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China
| | - Liang Yu
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China
| | - Dehui Deng
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China.,State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering , Xiamen University , Xiamen 361005 , P. R. China
| | - Xinhe Bao
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM) , Dalian Institute of Chemical Physics (DICP), Chinese Academy of Sciences (CAS) , Dalian 116023 , P. R. China
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30
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Xia Y, Huang J, Wu W, Zhang Y, Wang H, Zhu J, Yao J, Xu L, Sun Y, Zhang L, Lu R, Xiong J, Zou G. Sulfur‐Doped Rhenium Selenide Vertical Nanosheets: A High‐Performance Electrocatalyst for Hydrogen Evolution. ChemCatChem 2018. [DOI: 10.1002/cctc.201800757] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Yufei Xia
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Jianwen Huang
- State Key Laboratory of Electronic Thin Film and Integrated DevicesUniversity of Electronic Science and Technology of China Chengdu 610054 P.R. China
| | - Wenqi Wu
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Yadong Zhang
- Nanjing University of Science and Technology Nanjing 210094 P.R. China
| | - Hao Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Juntong Zhu
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Junjie Yao
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Li Xu
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Yinghui Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Li Zhang
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
| | - Ruifeng Lu
- Nanjing University of Science and Technology Nanjing 210094 P.R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated DevicesUniversity of Electronic Science and Technology of China Chengdu 610054 P.R. China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations & Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow University Suzhou 215006 P.R. China
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31
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Peng R, Ma Y, Zhang S, Huang B, Dai Y. Valley Polarization in Janus Single-Layer MoSSe via Magnetic Doping. J Phys Chem Lett 2018; 9:3612-3617. [PMID: 29909617 DOI: 10.1021/acs.jpclett.8b01625] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional valleytronic systems can provide information storage and processing advantages that complement or surpass those of conventional charge- and spin-based semiconductor technologies. The major challenge currently is to realize valley polarization for manipulating the valley degree of freedom. Here, we propose that valley polarization can be readily achieved in Janus single-layer MoSSe through magnetic doping, which is highly feasible in experiment. Due to inversion symmetry breaking combined with strong spin-orbit coupling (SOC), the pure single-layer MoSSe harbors an intriguing multivalleyed band structure and strong coupled spin and valley physics. After doping Cr/V, the long-sought valley polarization is successfully achieved with a remarkable energy difference of ∼0.06 eV upon switching on SOC. Furthermore, the valley polarization in Cr/V-doped single-layer MoSSe is tunable via strain engineering. Our work thus provides a promising platform for experimental studies and applications of the valleytronics.
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Affiliation(s)
- Rui Peng
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Shuai Zhang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Shandanan Street 27 , Jinan 250100 , China
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Yin G, Zhu D, Lv D, Hashemi A, Fei Z, Lin F, Krasheninnikov AV, Zhang Z, Komsa HP, Jin C. Hydrogen-assisted post-growth substitution of tellurium into molybdenum disulfide monolayers with tunable compositions. NANOTECHNOLOGY 2018; 29:145603. [PMID: 29384131 DOI: 10.1088/1361-6528/aaabe8] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Herein we report the successful doping of tellurium (Te) into molybdenum disulfide (MoS2) monolayers to form MoS2x Te2(1-x) alloy with variable compositions via a hydrogen-assisted post-growth chemical vapor deposition process. It is confirmed that H2 plays an indispensable role in the Te substitution into as-grown MoS2 monolayers. Atomic-resolution transmission electron microscopy allows us to determine the lattice sites and the concentration of introduced Te atoms. At a relatively low concentration, tellurium is only substituted in the sulfur sublattice to form monolayer MoS2(1-x)Te2x alloy, while with increasing Te concentration (up to ∼27.6% achieved in this study), local regions with enriched tellurium, large structural distortions, and obvious sulfur deficiency are observed. Statistical analysis of the Te distribution indicates the random substitution. Density functional theory calculations are used to investigate the stability of the alloy structures and their electronic properties. Comparison with experimental results indicate that the samples are unstrained and the Te atoms are predominantly substituted in the top S sublattice. Importantly, such ultimately thin Janus structure of MoS2(1-x)Te2x exhibits properties that are distinct from their constituents. We believe our results will inspire further exploration of the versatile properties of asymmetric 2D TMD alloys.
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Affiliation(s)
- Guoli Yin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
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Nguyen MAT, Gupta AS, Shevrin J, Akamatsu H, Xu P, Lin Z, Wang K, Zhu J, Gopalan V, Terrones M, Mallouk TE. Random anion distribution in MS x Se 2-x (M = Mo, W) crystals and nanosheets. RSC Adv 2018; 8:9871-9878. [PMID: 35540842 PMCID: PMC9078701 DOI: 10.1039/c8ra01497c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/17/2018] [Accepted: 02/22/2018] [Indexed: 11/21/2022] Open
Abstract
The group VIb dichalcogenides (MX2, M = Mo, W; X= S, Se) have a layered molybdenite structure in which M atoms are coordinated by a trigonal prism of X atoms. Ternary solid solutions of MS x Se2-x were synthesized, microcrystals were grown by chemical vapor transport, and their morphologies and structures were characterized by using synchrotron X-ray diffraction, Rietveld refinement, DIFFaX simulation of structural disorder, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Double aberration corrected scanning transmission electron microscopy was used to determine the anion distributions in single-layer nanosheets exfoliated from the microcrystals. These experiments indicate that the size difference between S and Se atoms does not result in phase separation, consistent with earlier studies of MX2 monolayer sheets grown by chemical vapor deposition. However, stacking faults occur in microcrystals along the layering axis, particularly in sulfur-rich compositions of MS x Se2-x solid solutions.
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Affiliation(s)
- Minh An T Nguyen
- Departments of Chemistry, Biochemistry and Molecular Biology, and Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Arnab Sen Gupta
- Department of Materials Science and Engineering, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Jacob Shevrin
- Department of Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Hirofumi Akamatsu
- Department of Materials Science and Engineering, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Pengtao Xu
- Departments of Chemistry, Biochemistry and Molecular Biology, and Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Zhong Lin
- Department of Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Jun Zhu
- Department of Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Mauricio Terrones
- Department of Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Thomas E Mallouk
- Departments of Chemistry, Biochemistry and Molecular Biology, and Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
- Department of Physics, The Pennsylvania State University University Park Pennsylvania 16802 USA
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34
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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35
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Ersan F, Ozaydin HD, Aktürk E. Influence of chalcogen composition on the structural transition and on the electronic and optical properties of the monolayer titanium trichalcogenide ordered alloys. Phys Chem Chem Phys 2018; 20:1431-1439. [DOI: 10.1039/c7cp06750j] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Based on first-principles spin-polarized density functional theory, we investigate the effects of chalcogen composition on the structural, electronic, and optical properties of monolayer (where X and X′ = S, Se, Te) ordered alloys with values of x of 0, 0.167, 0.333, 0.500, 0.667, 0.833, and 1.
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Affiliation(s)
- F. Ersan
- Department of Physics, Adnan Menderes University
- Aydin 09010
- Turkey
| | - H. D. Ozaydin
- Department of Physics, Adnan Menderes University
- Aydin 09010
- Turkey
| | - E. Aktürk
- Department of Physics, Adnan Menderes University
- Aydin 09010
- Turkey
- Nanotechnology Application and Research Center
- Adnan Menderes University
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36
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Duong DL, Yun SJ, Lee YH. van der Waals Layered Materials: Opportunities and Challenges. ACS NANO 2017; 11:11803-11830. [PMID: 29219304 DOI: 10.1021/acsnano.7b07436] [Citation(s) in RCA: 152] [Impact Index Per Article: 21.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.
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Affiliation(s)
- Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
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37
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Kochat V, Apte A, Hachtel JA, Kumazoe H, Krishnamoorthy A, Susarla S, Idrobo JC, Shimojo F, Vashishta P, Kalia R, Nakano A, Tiwary CS, Ajayan PM. Re Doping in 2D Transition Metal Dichalcogenides as a New Route to Tailor Structural Phases and Induced Magnetism. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1703754. [PMID: 28990227 DOI: 10.1002/adma.201703754] [Citation(s) in RCA: 92] [Impact Index Per Article: 13.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2017] [Revised: 08/21/2017] [Indexed: 06/07/2023]
Abstract
Alloying in 2D results in the development of new, diverse, and versatile systems with prospects in bandgap engineering, catalysis, and energy storage. Tailoring structural phase transitions using alloying is a novel idea with implications in designing all 2D device architecture as the structural phases in 2D materials such as transition metal dichalcogenides are correlated with electronic phases. Here, this study develops a new growth strategy employing chemical vapor deposition to grow monolayer 2D alloys of Re-doped MoSe2 with show composition tunable structural phase variations. The compositions where the phase transition is observed agree well with the theoretical predictions for these 2D systems. It is also shown that in addition to the predicted new electronic phases, these systems also provide opportunities to study novel phenomena such as magnetism which broadens the range of their applications.
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Affiliation(s)
- Vidya Kochat
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Amey Apte
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Hiroyuki Kumazoe
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences, University of Southern California, Los Angeles, CA, 90089, USA
- Department of Physics, Kumamoto University, Kumamoto, 860-8555, Japan
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences, University of Southern California, Los Angeles, CA, 90089, USA
| | - Sandhya Susarla
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Juan Carlos Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto, 860-8555, Japan
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences, University of Southern California, Los Angeles, CA, 90089, USA
| | - Rajiv Kalia
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences, University of Southern California, Los Angeles, CA, 90089, USA
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences, University of Southern California, Los Angeles, CA, 90089, USA
| | | | - Pulickel M Ajayan
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
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38
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Tan C, Lai Z, Zhang H. Ultrathin Two-Dimensional Multinary Layered Metal Chalcogenide Nanomaterials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28752578 DOI: 10.1002/adma.201701392] [Citation(s) in RCA: 122] [Impact Index Per Article: 17.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2017] [Revised: 04/28/2017] [Indexed: 05/12/2023]
Abstract
Ultrathin two-dimensional (2D) layered transition metal dichalcogenides (TMDs), such as MoS2 , WS2 , TiS2 , TaS2 , ReS2 , MoSe2 and WSe2 , have attracted considerable attention over the past six years owing to their unique properties and great potential in a wide range of applications. Aiming to achieve tunable properties and optimal application performances, great effort is devoted to the exploration of 2D multinary layered metal chalcogenide nanomaterials, which include ternary metal chalcogenides with well-defined crystal structures, alloyed TMDs, heteroatom-doped TMDs and 2D metal chalcogenide heteronanostructures. These novel 2D multinary layered metal chalcogenide nanomaterials exhibit some unique properties compared to 2D binary TMD counterparts, thus holding great promise in various potential applications including electronics/optoelectronics, catalysis, sensors, biomedicine, and energy storage and conversion with enhanced performances. This article focuses on the state-of-art progress on the preparation, characterization and applications of ultrathin 2D multinary layered metal chalcogenide nanomaterials.
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Affiliation(s)
- Chaoliang Tan
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zhuangchai Lai
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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39
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Liu P, Xiang B. 2D hetero-structures based on transition metal dichalcogenides: fabrication, properties and applications. Sci Bull (Beijing) 2017; 62:1148-1161. [PMID: 36659346 DOI: 10.1016/j.scib.2017.08.007] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2017] [Revised: 08/01/2017] [Accepted: 08/03/2017] [Indexed: 01/21/2023]
Abstract
Recently, two dimensional transition metal dichalcogenides MX2 (M=Mo, W, etc; X=S, Se, Te) have ignited immense interests because of their unique structural and physical properties for the potential applications in the nano-optoelectronics, valley-spintronics etc. In terms of the structural compatibility and van der Waals interaction, two dimensional (2D) MX2 layers can be fabricated into various lateral and vertical hetero-structures. The atomically-thin hetero-structures comprising different layered MX2 provide a new platform for exploring fundamental physics and device technologies with unprecedented phenomenon and extraordinary functionalities. In this review, we report the recent progress about the fabrication, properties and applications of 2D hetero-structures based on transition metal dichalcogenides.
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Affiliation(s)
- Ping Liu
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Bin Xiang
- Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
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40
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Zhang J, Jia S, Kholmanov I, Dong L, Er D, Chen W, Guo H, Jin Z, Shenoy VB, Shi L, Lou J. Janus Monolayer Transition-Metal Dichalcogenides. ACS NANO 2017; 11:8192-8198. [PMID: 28771310 DOI: 10.1021/acsnano.7b03186] [Citation(s) in RCA: 395] [Impact Index Per Article: 56.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The crystal configuration of sandwiched S-Mo-Se structure (Janus SMoSe) at the monolayer limit has been synthesized and carefully characterized in this work. By controlled sulfurization of monolayer MoSe2, the top layer of selenium atoms is substituted by sulfur atoms, while the bottom selenium layer remains intact. The structure of this material is systematically investigated by Raman, photoluminescence, transmission electron microscopy, and X-ray photoelectron spectroscopy and confirmed by time-of-flight secondary ion mass spectrometry. Density functional theory (DFT) calculations are performed to better understand the Raman vibration modes and electronic structures of the Janus SMoSe monolayer, which are found to correlate well with corresponding experimental results. Finally, high basal plane hydrogen evolution reaction activity is discovered for the Janus monolayer, and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in the Janus structure.
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Affiliation(s)
- Jing Zhang
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Shuai Jia
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Iskandar Kholmanov
- Department of Mechanical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States
| | - Liang Dong
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Dequan Er
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Weibing Chen
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Hua Guo
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Zehua Jin
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Vivek B Shenoy
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Li Shi
- Department of Mechanical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States
| | - Jun Lou
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
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41
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Sun Y, Fujisawa K, Lin Z, Lei Y, Mondschein JS, Terrones M, Schaak RE. Low-Temperature Solution Synthesis of Transition Metal Dichalcogenide Alloys with Tunable Optical Properties. J Am Chem Soc 2017; 139:11096-11105. [DOI: 10.1021/jacs.7b04443] [Citation(s) in RCA: 52] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Yifan Sun
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kazunori Fujisawa
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhong Lin
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu Lei
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jared S. Mondschein
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Raymond E. Schaak
- Department
of Chemistry, ‡Department of Physics, §Department of Materials Science and
Engineering, ∥Materials Research Institute, and ⊥Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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42
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Lu AY, Zhu H, Xiao J, Chuu CP, Han Y, Chiu MH, Cheng CC, Yang CW, Wei KH, Yang Y, Wang Y, Sokaras D, Nordlund D, Yang P, Muller DA, Chou MY, Zhang X, Li LJ. Janus monolayers of transition metal dichalcogenides. NATURE NANOTECHNOLOGY 2017; 12:744-749. [PMID: 28507333 DOI: 10.1038/nnano.2017.100] [Citation(s) in RCA: 570] [Impact Index Per Article: 81.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2016] [Accepted: 04/20/2017] [Indexed: 05/22/2023]
Abstract
Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.
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Affiliation(s)
- Ang-Yu Lu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hanyu Zhu
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA
| | - Jun Xiao
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA
| | - Chih-Piao Chuu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
| | - Yimo Han
- School of Applied &Engineering Physics, Cornell University, Ithaca, New York 14850, USA
| | - Ming-Hui Chiu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chia-Chin Cheng
- Research Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Chih-Wen Yang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Kung-Hwa Wei
- Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Yiming Yang
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Yuan Wang
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Dimosthenis Sokaras
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
| | - Dennis Nordlund
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
| | - Peidong Yang
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - David A Muller
- School of Applied &Engineering Physics, Cornell University, Ithaca, New York 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA
| | - Mei-Yin Chou
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Xiang Zhang
- NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Lain-Jong Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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43
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Possible electric field induced indirect to direct band gap transition in MoSe 2. Sci Rep 2017; 7:5206. [PMID: 28701785 PMCID: PMC5507882 DOI: 10.1038/s41598-017-05613-5] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/14/2017] [Accepted: 05/31/2017] [Indexed: 11/24/2022] Open
Abstract
Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2 (M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2 have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2 into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2 that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2 can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials.
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Tan C, Cao X, Wu XJ, He Q, Yang J, Zhang X, Chen J, Zhao W, Han S, Nam GH, Sindoro M, Zhang H. Recent Advances in Ultrathin Two-Dimensional Nanomaterials. Chem Rev 2017; 117:6225-6331. [PMID: 28306244 DOI: 10.1021/acs.chemrev.6b00558] [Citation(s) in RCA: 1969] [Impact Index Per Article: 281.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photocatalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.
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Affiliation(s)
- Chaoliang Tan
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiehong Cao
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore.,College of Materials Science and Engineering, Zhejiang University of Technology , 18 Chaowang Road, Hangzhou 310014, China
| | - Xue-Jun Wu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Qiyuan He
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jian Yang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiao Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Junze Chen
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Wei Zhao
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Shikui Han
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Gwang-Hyeon Nam
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Melinda Sindoro
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Hua Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
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Wang Z, Huang Q, Chen P, Guo S, Liu X, Liang X, Wang L. Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations. Sci Rep 2016; 6:38394. [PMID: 27910917 PMCID: PMC5133539 DOI: 10.1038/srep38394] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2016] [Accepted: 11/08/2016] [Indexed: 11/09/2022] Open
Abstract
Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2 and WS2 have successfully been fabricated on SiO2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm2/V·s. The crystalline flakes of WS2 are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm2/V·s.
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Affiliation(s)
- Zhendong Wang
- Department of Physics, Nanchang University, Nanchang 330031, China
| | - Qi Huang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Bejing 100871, China
| | - Peng Chen
- Department of Physics, Nanchang University, Nanchang 330031, China
| | - Shouhui Guo
- Department of Physics, Nanchang University, Nanchang 330031, China
| | - Xiaoqing Liu
- Department of Physics, Nanchang University, Nanchang 330031, China
| | - Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Bejing 100871, China
| | - Li Wang
- Department of Physics, Nanchang University, Nanchang 330031, China.,Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, China
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Zhou X, Zhang Q, Gan L, Li H, Xiong J, Zhai T. Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2016; 3:1600177. [PMID: 27981008 PMCID: PMC5157174 DOI: 10.1002/advs.201600177] [Citation(s) in RCA: 69] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2016] [Indexed: 05/19/2023]
Abstract
As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth-abundant, low-cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.
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Affiliation(s)
- Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Qi Zhang
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu611731P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
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Pham VP, Yeom GY. Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:9024-9059. [PMID: 27500380 DOI: 10.1002/adma.201506402] [Citation(s) in RCA: 78] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2015] [Revised: 05/24/2016] [Indexed: 06/06/2023]
Abstract
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2 ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2 -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS2 in industry, as a guide for 2D material community, are also provided.
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Affiliation(s)
- Viet Phuong Pham
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 440-746, Republic of Korea
| | - Geun Young Yeom
- SKKU Advanced Institute of Nano Technology (SAINT), School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 440-746, Republic of Korea.
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Zhang C, Kc S, Nie Y, Liang C, Vandenberghe WG, Longo RC, Zheng Y, Kong F, Hong S, Wallace RM, Cho K. Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy. ACS NANO 2016; 10:7370-7375. [PMID: 27415610 DOI: 10.1021/acsnano.6b00148] [Citation(s) in RCA: 55] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Metal-insulator transitions in low-dimensional materials under ambient conditions are rare and worth pursuing due to their intriguing physics and rich device applications. Monolayer MoTe2 and WTe2 are distinguished from other TMDs by the existence of an exceptional semimetallic distorted octahedral structure (T') with a quite small energy difference from the semiconducting H phase. In the process of transition metal alloying, an equal stability point of the H and the T' phase is observed in the formation energy diagram of monolayer WxMo1-xTe2. This thermodynamically driven phase transition enables a controlled synthesis of the desired phase (H or T') of monolayer WxMo1-xTe2 using a growth method such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Furthermore, charge mediation, as a more feasible method, is found to make the T' phase more stable than the H phase and induce a phase transition from the H phase (semiconducting) to the T' phase (semimetallic) in monolayer WxMo1-xTe2 alloy. This suggests that a dynamic metal-insulator phase transition can be induced, which can be exploited for rich phase transition applications in two-dimensional nanoelectronics.
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Affiliation(s)
- Chenxi Zhang
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Santosh Kc
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Yifan Nie
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Chaoping Liang
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - William G Vandenberghe
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Roberto C Longo
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Yongping Zheng
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Fantai Kong
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Suklyun Hong
- Department of Physics and Graphene Research Institute, Sejong University , Seoul 143-747, Korea
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
- Department of Physics, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
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49
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Wan Y, Zhang H, Zhang K, Wang Y, Sheng B, Wang X, Dai L. Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica. ACS APPLIED MATERIALS & INTERFACES 2016; 8:18570-18576. [PMID: 27338112 DOI: 10.1021/acsami.6b04540] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Monolayer MoS2, with fascinating mechanical, electrical, and optical properties, has generated enormous scientific curiosity and industrial interest. Controllable and scalable synthesis of monolayer MoS2 on various desired substrates has significant meaning in both basic scientific research and device application. Recent years have witnessed many advances in the direct synthesis of single-crystalline MoS2 flakes or their polycrystalline aggregates on numerous diverse substrates, such as SiO2-Si, mica, sapphire, h-BN, and SrTiO3, etc. In this work, we used the dual-temperature-zone atmospheric-pressure chemical vapor deposition method to directly synthesize large-scale monolayer MoS2 on fused silica, the most ordinary transparent insulating material in daily life. We systematically investigated the photoluminescence (PL) properties of monolayer MoS2 on fused silica and SiO2-Si substrates, which have different thermal conductivity coefficients and thermal expansion coefficients. We found that there exists a stronger strain on monolayer MoS2 grown on fused silica, and the strain becomes more obvious as temperature decreases. Moreover, the monolayer MoS2 grown on fused silica exhibits the unique trait of a fractal shape with tortuous edges and has stronger adsorbability. The monolayer MoS2 grown on fused silica may find application in sensing, energy storage, and transparent optoelectronics, etc.
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Affiliation(s)
- Yi Wan
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
| | - Hui Zhang
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
| | - Kun Zhang
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
| | - Yilun Wang
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
| | - Bowen Sheng
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
| | - Xinqiang Wang
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and School of Physics and ‡Collaborative Innovation Center of Quantum Matter, Peking University , Beijing 100871, China
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50
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Cain JD, Shi F, Wu J, Dravid VP. Growth Mechanism of Transition Metal Dichalcogenide Monolayers: The Role of Self-Seeding Fullerene Nuclei. ACS NANO 2016; 10:5440-5. [PMID: 27138735 DOI: 10.1021/acsnano.6b01705] [Citation(s) in RCA: 73] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Due to their unique optoelectronic properties and potential for next generation devices, monolayer transition metal dichalcogenides (TMDs) have attracted a great deal of interest since the first observation of monolayer MoS2 a few years ago. While initially isolated in monolayer form by mechanical exfoliation, the field has evolved to more sophisticated methods capable of direct growth of large-area monolayer TMDs. Chemical vapor deposition (CVD) is the technique used most prominently throughout the literature and is based on the sulfurization of transition metal oxide precursors. CVD-grown monolayers exhibit excellent quality, and this process is widely used in studies ranging from the fundamental to the applied. However, little is known about the specifics of the nucleation and growth mechanisms occurring during the CVD process. In this study, we have investigated the nucleation centers or "seeds" from which monolayer TMDs typically grow. This was accomplished using aberration-corrected scanning transmission electron microscopy to analyze the structure and composition of the nuclei present in CVD-grown MoS2-MoSe2 alloys. We find that monolayer growth proceeds from nominally oxi-chalcogenide nanoparticles which act as heterogeneous nucleation sites for monolayer growth. The oxi-chalcogenide nanoparticles are typically encased in a fullerene-like shell made of the TMD. Using this information, we propose a step-by-step nucleation and growth mechanism for monolayer TMDs. Understanding this mechanism may pave the way for precise control over the synthesis of 2D materials, heterostructures, and related complexes.
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Affiliation(s)
- Jeffrey D Cain
- Department of Materials Science and Engineering, ‡International Institute for Nanotechnology, and §Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Fengyuan Shi
- Department of Materials Science and Engineering, ‡International Institute for Nanotechnology, and §Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Jinsong Wu
- Department of Materials Science and Engineering, ‡International Institute for Nanotechnology, and §Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University , Evanston, Illinois 60208, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, ‡International Institute for Nanotechnology, and §Northwestern University Atomic and Nanoscale Characterization Experimental (NUANCE) Center, Northwestern University , Evanston, Illinois 60208, United States
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