'Bubble-free' electrochemical delamination of CVD graphene films

Graphene MEMS and NEMS

Graphene is being increasingly used as an interesting transducer membrane in micro- and nanoelectromechanical systems (MEMS and NEMS, respectively) due to its atomical thickness, extremely high carrier mobility, high mechanical strength, and piezoresistive electromechanical transductions. NEMS devices based on graphene feature increased sensitivity, reduced size, and new functionalities. In this review, we discuss the merits of graphene as a functional material for MEMS and NEMS, the related properties of graphene, the transduction mechanisms of graphene MEMS and NEMS, typical transfer methods for integrating graphene with MEMS substrates, methods for fabricating suspended graphene, and graphene patterning and electrical contact. Consequently, we provide an overview of devices based on suspended and nonsuspended graphene structures. Finally, we discuss the potential and challenges of applications of graphene in MEMS and NEMS. Owing to its unique features, graphene is a promising material for emerging MEMS, NEMS, and sensor applications.

Life beyond Fritz: On the Detachment of Electrolytic Bubbles

We present an experimental study on detachment characteristics of hydrogen bubbles during electrolysis. Using a transparent (Pt or Ni) electrode enables us to directly observe the bubble contact line and bubble size. Based on these quantities we determine other parameters such as the contact angle and volume through solutions of the Young-Laplace equation. We observe bubbles without ("pinned bubbles") and with ("spreading bubbles") contact line spreading and find that the latter mode becomes more prevalent if the concentration of HClO4 is ≥0.1 M. The departure radius for spreading bubbles is found to drastically exceed the value predicted by the well-known formula of W. Fritz [Phys. Z. 1935, 36, 379-384] for this case. We show that this is related to the contact line hysteresis, which leads to pinning of the contact line after an initial spreading phase at the receding contact angle. The departure mode is then similar to a pinned bubble and occurs once the contact angle reaches the advancing contact angle of the surface. A prediction for the departure radius based on these findings is found to be consistent with the experimental data.

Observation of reversible and irreversible charge transfer processes in dye-monolayer graphene systems using Raman spectroscopy as a tool

Herein, we report the Raman spectroscopy of crystal violet (CV) and IR-780 Iodide molecules dispersed on the monolayer graphene film (MGF). In the CV-MGF system, the enhancement in the Raman scattering of CV molecules is observed irrespective of the location probed during the spectral measurements. This enhancement is due to the charge transfer from the MGF to CV molecules. However, in the case of the IR-780 Iodide - MGF system, the enhancement of Raman scattering of dye molecules or MGF is observed strongly depending upon the probed location. These observations indicate that the charge transfer is irreversible and reversible in the CV-MGF and IR-780 Iodide-MGF systems, respectively. Importantly, for the first time, this experimental study revealed that enhancing the Raman scattering of MGF is possible through the "chemical mechanism" with suitable dye molecules apart from the "electromagnetic mechanism" with plasmonic hot spots of the metal nanoparticles and photonic nanojets of single dielectric microparticles.

Conveyor CVD to high-quality and productivity of large-area graphene and its potentiality

The mass production of high-quality graphene is required for industrial application as a future electronic material. However, the chemical vapor deposition (CVD) systems previously studied for graphene production face bottlenecks in terms of quality, speed, and reproducibility. Herein, we report a novel conveyor CVD system that enables rapid graphene synthesis using liquid precursors. Pristine and nitrogen-doped graphene samples of a size comparable to a smartphone (15 cm × 5 cm) are successfully synthesized at temperatures of 900, 950, and 1000 °C using butane and pyridine, respectively. Raman spectroscopy allows optimization of the rapid-synthesis conditions to achieve uniformity and high quality. By conducting compositional analysis via X-ray photoelectron spectroscopy as well as electrical characterization, it is confirmed that graphene synthesis and nitrogen doping degree can be adjusted by varying the synthesis conditions. Testing the corresponding graphene samples as gas-sensor channels for NH3 and NO2 and evaluating their response characteristics show that the gas sensors exhibit polar characteristics in terms of gas adsorption and desorption depending on the type of gas, with contrasting characteristics depending on the presence or absence of nitrogen doping; nitrogen-doped graphene exhibits superior gas-sensing sensitivity and response speed compared with pristine graphene.

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

Enhancing the Consistency and Performance of Graphene-Based Devices via Al Intermediate-Layer-Assisted Transfer and Patterning

Graphene has garnered widespread attention, and its use is being explored for various electronic devices due to its exceptional material properties. However, the use of polymers (PMMA, photoresists, etc.) during graphene transfer and patterning processes inevitably leaves residues on graphene surface, which can decrease the performance and yield of graphene-based devices. This paper proposes a new transfer and patterning process that utilizes an Al intermediate layer to separate graphene from polymers. Through DFT calculations, the binding energy of graphene-Al was found to be only -0.48 eV, much lower than that of PMMA and photoresist with graphene, making it easier to remove Al from graphene. Subsequently, this was confirmed through XPS analysis. A morphological characterization demonstrated that the graphene patterns prepared using the Al intermediate layer process exhibited higher surface quality, with significantly reduced roughness. It is noteworthy that the devices obtained with the proposed method exhibited a notable enhancement in both consistency and sensitivity during electrical testing (increase of 67.14% in temperature sensitivity). The low-cost and pollution-free graphene-processing method proposed in this study will facilitate the further commercialization of graphene-based devices.

Precise synthesis of graphene by chemical vapor deposition

Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.

Self-Compliant Threshold Switching Devices with High On/Off ratio by Control of Quantized Conductance in Ag Filaments

Threshold switches based on conductive metal bridge devices are useful as selectors to block sneak leakage paths in memristor arrays used in neuromorphic computing and emerging nonvolatile memory. We demonstrate that control of Ag-cation concentration in Al₂O₃ electrolyte and Ag filament size and density play an important role in the high on/off ratio and self-compliance of metal-ion-based volatile threshold switching devices. To control Ag-cation diffusion, we inserted an engineered defective graphene monolayer between the Ag electrode and the Al₂O₃ electrolyte. The Ag-cation migration and the Ag filament size and density are limited by the pores in the defective graphene monolayer. This leads to quantized conductance in the Ag filaments and self-compliance resulting from the formation and dissolution of the Ag conductive filament.

Ultraclean and Facile Patterning of CVD Graphene by a UV-Light-Assisted Dry Transfer Method

The synthesis of large-area graphene by the chemical vapor deposition (CVD) method is a mature technology; however, a transfer procedure is required to integrate CVD-grown graphene into a functional device. The reported methods for transferring graphene films cause different degrees of defects (cracking, rupture) and ion/polymer residues, which deteriorate or alter the electrical properties of as-grown graphene. Developing a reliable and fast transfer method that can maintain high-quality graphene remains a challenge. In this work, we employed UV light release tape (UV-RT) as the support layer to replace the frequently used thermal release tape (TRT) in a typical roll-to-roll dry transfer process. In this process, we used an easier-to-remove polymer as an adhesion layer to greatly reduce the strain and defects that occur during the transfer process. The cleanliness of graphene transferred by this method is above 99%, and the carrier mobility is 1.6 and 1.1 times higher than that obtained with conventional wet transfer and TRT transfer methods, respectively. UV illumination leads to facile and uniform release of the graphene film onto the target substrate, achieving one-step and selective patterning of graphene (feature size of <100 μm). The UV-assisted decomposition of the polymer molecular structure into small molecules enables a residue-free and ultraclean graphene surface. This proposed transfer method enables facile patterning of graphene and 2D films while maintaining high quality, which paves the way for versatile functional graphene applications.

Defect seeded remote epitaxy of GaAs films on graphene

Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate. This allows for the subsequent release of the epitaxial film for integration with other systems and reuse of growth substrates. This approach is applicable to material systems with an ionic component to their bonding, making it notably appealing for III-V alloys, which are a technologically important family of materials. Chemical vapour deposition growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of these materials, however, the presence of water promotes the formation of a III-V oxide layer, which degrades the quality of subsequently grown epitaxial films. This work demonstrates the use of an argon ion beam for the controlled introduction of defects in a monolayer graphene interface layer to enable the growth of a single crystal GaAs film by molecular beam epitaxy, despite the presence of a native oxide at the substrate/graphene interface. A hybrid mechanism of defect seeded lateral overgrowth with remote epitaxy contributing the coalescence of the film is indicated. The exfoliation of the GaAs films reveals the presence of defect seeded nucleation sites, highlighting the need to balance the benefits of defect seeding on crystal quality against the requirement for subsequent exfoliation of the film, for future large area development of this approach.

Recent Progress in the Transfer of Graphene Films and Nanostructures

The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Owing to the fascinating properties of graphene, fulfilling the promising characteristics of graphene in applications has ignited enormous scientific and industrial interest. Chemical vapor deposition (CVD) growth of graphene on metal substrates provides tantalizing opportunities for the large-area synthesis of graphene in a controllable manner. However, the tedious transfer of graphene from metal substrates onto desired substrates remains inevitable, and cracks of graphene membrane, transfer-induced doping, wrinkles as well as surface contamination can be incurred during the transfer, which highly degrade the performance of graphene. Furthermore, new issues can arise when moving to large-scale transfer at an industrial scale, thus cost-efficient and environment-friendly transfer techniques also become imperative. The aim of this review is to provide a comprehensive understanding of transfer-related issues and the corresponding experimental solutions and to provide an outlook for future transfer techniques of CVD graphene films on an industrial scale.

Graphene Transfer: A Physical Perspective

Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

Defect-Free Mechanical Graphene Transfer Using n-Doping Adhesive Gel Buffer

The synthesis of uniform low-defect graphene on a catalytic metal substrate is getting closer to the industrial level. However, its practical application is still challenging due to the lack of an appropriate method for its scalable damage-free transfer to a device substrate. Here, an efficient approach for a defect-free, etchant-free, wrinkle-free, and large-area graphene transfer is demonstrated by exploiting a multifunctional viscoelastic polymer gel as a simultaneous shock-free adhesive and dopant layer. Initially, an amine-rich polymer solution in its liquid form allows for conformal coating on a graphene layer grown on a Cu substrate. The subsequent thermally cured soft gel enables the shock-free and wrinkle-free direct mechanical exfoliation of graphene from a substrate due to its strong charge-transfer interaction with graphene and excellent shock absorption. The adhesive gel with a high optical transparency works as an electron doping layer toward graphene, which exhibits significantly reduced sheet resistances without optical transmittance loss. Lastly, the transferred graphene layer shows high mechanical and chemical stabilities under the repeated bending test and exposure to various solvents. This gel-assisted mechanical transfer method can be a solution to connect the missing part between large-scale graphene synthesis and next-generation electronics and optoelectronic applications.

Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO₂/Si and Si₃N₄/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

Graphene field-effect transistors as bioanalytical sensors: design, operation and performance

Graphene field-effect transistors (GFETs) are emerging as bioanalytical sensors, in which their responsive electrical conductance is used to perform quantitative analyses of biologically-relevant molecules such as DNA, proteins, ions and small molecules. This review provides a detailed evaluation of reported approaches in the design, operation and performance assessment of GFET biosensors. We first dissect key design elements of these devices, along with most common approaches for their fabrication. We compare possible modes of operation of GFETs as sensors, including transfer curves, output curves and time series as well as their integration in real-time or a posteriori protocols. Finally, we review performance metrics reported for the detection and quantification of bioanalytes, and discuss limitations and best practices to optimize the use of GFETs as bioanalytical sensors.

Cluster Superlattice Membranes

Cluster superlattice membranes consist of a two-dimensional hexagonal lattice of similar-sized nanoclusters sandwiched between single-crystal graphene and an amorphous carbon matrix. The fabrication process involves three main steps, the templated self-organization of a metal cluster superlattice on epitaxial graphene on Ir(111), conformal embedding in an amorphous carbon matrix, and subsequent lift-off from the Ir(111) substrate. The mechanical stability provided by the carbon-graphene matrix makes the membrane stable as a free-standing material and enables transfer to other substrates. The fabrication procedure can be applied to a wide variety of cluster materials and cluster sizes from the single-atom limit to clusters of a few hundred atoms, as well as other two-dimensional layer/host matrix combinations. The versatility of the membrane composition, its mechanical stability, and the simplicity of the transfer procedure make cluster superlattice membranes a promising material in catalysis, magnetism, energy conversion, and optoelectronics.

Growth of twisted bilayer graphene through two-stage chemical vapor deposition

We investigate growth of twisted bilayer graphene through two-stage chemical vapor deposition (CVD). Exploiting the synergetic nucleation and growth dynamics involving carbon sources from the residual carbon impurities in Cu bulk and gaseous CH_x, sub-millimeter-sized single crystalline graphene grains with multiple merged adlayer grains formed underneath are grown on Cu substrate. The distribution of the twist angles is investigated through a computer algorithm utilizing spectral features from micro-Raman mapping. Besides the more thermodynamically stable AB-stacking (AB-BLG) or large angle (>15°) decoupled bilayer graphene (DC-BLG) configurations, there are some bilayer regions that contain specific twist angles (3-8°, 8-13°, and 11-15°) (termed as TBLG). The statistics show no TBLG formation for BLG with single nucleation center. The formation probability of TBLG is strongly dependent on the relative orientation of merging adlayer grains. Significant defects are found at the grain boundaries formed in AB-DC merging event without creating TBLG domain. The areal fraction of TBLG increases as H₂/CH₄ ratio increases. The growth mechanism of TBLG is discussed in light of the interactions between the second layer grains with consideration of strain generation during merging of adlayers.

Review of fabrication methods of large-area transparent graphene electrodes for industry

Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes; it has low sheet resistance, high optical transmission and is flexible. Whereas the most common transparent electrode material, tin-doped indium-oxide (ITO) is brittle, less transparent and expensive, which limit its compatibility in flexible electronics as well as in low-cost devices. Here we review two large-area fabrication methods for graphene based transparent electrodes for industry: liquid exfoliation and low-pressure chemical vapor deposition (CVD). We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent results. State-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of 43.5, slightly over the minimum required for industry of 35, while CVD reaches as high as 419.

Towards large-scale graphene transfer

The transfer process is crucial for obtaining high-quality graphene for its large-scale industrial application. In this review, graphene transfer methods are systematically classified along with an analysis of the contamination or impurity of graphene that is introduced during the transfer process. Two key processes are emphasized, the substrate removal process and the direct/indirect transfer of graphene. Based on the efficiency and cost factors of industrial scale production, various transfer methods are summarized and evaluated. Potential transfer technologies and future research directions for industrial application are prospected.

Gas Bubbles in Electrochemical Gas Evolution Reactions

Electrochemical gas evolution reactions are of vital importance in numerous electrochemical processes including water splitting, chloralkaline process, and fuel cells. During gas evolution reactions, gas bubbles are vigorously and constantly forming and influencing these processes. In the past few decades, extensive studies have been performed to understand the evolution of gas bubbles, elucidate the mechanisms of how gas bubbles impact gas evolution reactions, and exploit new bubble-based strategies to improve the efficiency of gas evolution reactions. In this feature article, we summarize the classical theories as well as recent advancements in this field and provide an outlook on future research topics.

MEH-PPV photophysics: insights from the influence of a nearby 2D quencher

The effect of 2D quenching on single chain photophysics was investigated by spin coating 13 nm thick films of polystyrene lightly doped with MEH-PPV onto CVD grown graphene and observing the changes in several photoluminescent (PL) observables. With 99% of the PL quenched, we found a 60% drop in the PL lifetime, along with a significant blue-shift of the PL emission due to the preferential quenching of emission at longer wavelengths. During photo-bleaching, the blue spectral shift observed for isolated polymers was eliminated in the presence of the quencher up until 70% of the polymer was photo-bleached. Results were interpreted using a static disorder induced conjugation length distribution model. The quencher, by opening up a new non-radiative decay channel, ensures that excitons do not have sufficient time to migrate to nearby lower energy chromophores. The reduction of energy transfer into the lowest-energy chromophores thus reduces their rate of photo-bleaching. Finally, the difference between the quenched and non-quenched spectra allows the rate of energy transfer along the polymer backbone to be estimated at ∼2 ns^-1.

Optimized poly(methyl methacrylate)-mediated graphene-transfer process for fabrication of high-quality graphene layer

Graphene grown on a copper (Cu) substrate by chemical vapor deposition (CVD) is typically required to be transferred to another substrate for the fabrication of various electrical devices. PMMA-mediated wet process is the most widely used method for CVD-graphene-transfer. However, PMMA residue and wrinkles that inevitably remain on the graphene surface during the transfer process are critical issues degrading the electrical properties of graphene. In this paper, we report on a PMMA-mediated graphene-transfer method that can effectively reduce the density and size of the PMMA residue and the height of wrinkles on the transferred graphene layer. We found out that acetic acid is the most effective PMMA stripper among the typically used solutions to remove the PMMA residue. In addition, we observed that an optimized annealing process can reduce the height of the wrinkles on the transferred graphene layer without degrading the graphene quality. The effects of the suggested wet transfer process were also investigated by evaluating the electrical properties of field-effect transistors fabricated on the transferred graphene layer. The results of this work will contribute to the development of fabrication processes for high-quality graphene devices, given that the transfer of graphene from the Cu substrate is essential process to the application of CVD-graphene.

Graphene delamination using 'electrochemical methods': an ion intercalation effect

The mechanism of graphene delamination from a Pt catalyst growth surface with electrochemical methods is studied. After a water intercalation step, an electrochemical graphene delamination process is done with a variety of different electrolytes. It is shown that (hydrogen or oxygen) bubble formation is not the main driving force to decouple graphene from its catalyst growth substrate. Ion intercalation is identified as the primary component for a fast graphene delamination process from its catalytic growth substrate. When the Pt/graphene sample is negatively charged, cations will intercalate, assuming they do not reduce within the electrochemical window of the solvent. This cation intercalation does result in graphene delamination. In the same way, anions intercalate in positively charged Pt/graphene samples when they do not react within the electrochemical window of the solvent. Furthermore, it is shown that applying a potential is sufficient (current is not needed) to induce ion intercalation and, as a result, graphene delamination. These findings open the door to avoid Na⁺ or K⁺ contamination introduced during currently described electrochemical graphene delamination. Alternative electrolytes (i.e. ammonium hydroxide and tetraethylammonium hydroxide) are proposed, due to the absence of alkali contaminants and rapid cation intercalation to delaminate graphene.

Direct growth of graphene on rigid and flexible substrates: progress, applications, and challenges

Graphene has recently been attracting considerable interest because of its exceptional conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit high potential for applications in electronics, optoelectronics, and energy harvesting. In this paper, we review various growth strategies including metal-catalyzed transfer-free growth and direct-growth of graphene on flexible and rigid insulating substrates which are "major issues" for avoiding the complicated transfer processes that cause graphene defects, residues, tears and performance degradation in graphene-based functional devices. Recent advances in practical applications based on "direct-grown graphene" are discussed. Finally, several important directions, challenges and perspectives in the commercialization of 'direct growth of graphene' are also discussed and addressed.

Controlling Water Intercalation Is Key to a Direct Graphene Transfer

The key steps of a transfer of two-dimensional (2D) materials are the delamination of the as-grown material from a growth substrate and the lamination of the 2D material on a target substrate. In state-of-the-art transfer experiments, these steps remain very challenging, and transfer variations often result in unreliable 2D material properties. Here, it is demonstrated that interfacial water can insert between graphene and its growth substrate despite the hydrophobic behavior of graphene. It is understood that interfacial water is essential for an electrochemistry-based graphene delamination from a Pt surface. Additionally, the lamination of graphene to a target wafer is hindered by intercalation effects, which can even result in graphene delamination from the target wafer. For circumvention of these issues, a direct, support-free graphene transfer process is demonstrated, which relies on the formation of interfacial water between graphene and its growth surface, while avoiding water intercalation between graphene and the target wafer by using hydrophobic silane layers on the target wafer. The proposed direct graphene transfer also avoids polymer contamination (no temporary support layer) and eliminates the need for etching of the catalyst metal. Therefore, recycling of the growth template becomes feasible. The proposed transfer process might even open the door for the suggested atomic-scale interlocking-toy-brick-based stacking of different 2D materials, which will enable a more reliable fabrication of van der Waals heterostructure-based devices and applications.

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

Chemical vapor deposition (CVD) of carbon precursors employing a metal catalyst is a well-established method for synthesizing high-quality single-layer graphene. Yet the main challenge of the CVD process is the required transfer of a graphene layer from the substrate surface onto a chosen target substrate. This process is delicate and can severely degrade the quality of the transferred graphene. The protective polymer coatings typically used generate residues and contamination on the ultrathin graphene layer. In this work, we have developed a graphene transfer process which works without a coating and allows the transfer of graphene onto arbitrary substrates without the need for any additional post-processing. During the course of our transfer studies, we found that the etching process that is usually employed can lead to contamination of the graphene layer with the Faradaic etchant component FeCl₃, resulting in the deposition of iron oxide Fe _x O _y nanoparticles on the graphene surface. We systematically analyzed the removal of the copper substrate layer and verified that crystalline iron oxide nanoparticles could be generated in controllable density on the graphene surface when this process is optimized. It was further confirmed that the Fe _x O _y particles on graphene are active in the catalytic growth of carbon nanotubes when employing a water-assisted CVD process.

Single Graphene Layer on Pt(111) Creates Confined Electrochemical Environment via Selective Ion Transport

Graphene is a promising candidate for an ideal membrane material. Its ultralow (one-atomic) thickness potentially provides high permeation and at the same time high selectivity. Here, it is shown that these properties can be used to create a confined, two-dimensional electrochemical environment between a graphene layer and a single-crystal Pt(111) surface. The well-defined fingerprint voltammetric characteristics of Pt(111) provide an immediate information about the penetration and intercalation of ions into the confined space. These processes are shown to be highly selective.

Surface chemistry and catalysis confined under two-dimensional materials

Interfaces between 2D material overlayers and solid surfaces provide confined spaces for chemical processes, which have stimulated new chemistry under a 2D cover.

The physics and chemistry of graphene-on-surfaces

This review describes the major “graphene-on-surface” structures and examines the roles of their properties in governing the overall performance for specific applications.

Catalyst Interface Engineering for Improved 2D Film Lift-Off and Transfer

The mechanisms by which chemical vapor deposited (CVD) graphene and hexagonal boron nitride (h-BN) films can be released from a growth catalyst, such as widely used copper (Cu) foil, are systematically explored as a basis for an improved lift-off transfer. We show how intercalation processes allow the local Cu oxidation at the interface followed by selective oxide dissolution, which gently releases the 2D material (2DM) film. Interfacial composition change and selective dissolution can thereby be achieved in a single step or split into two individual process steps. We demonstrate that this method is not only highly versatile but also yields graphene and h-BN films of high quality regarding surface contamination, layer coherence, defects, and electronic properties, without requiring additional post-transfer annealing. We highlight how such transfers rely on targeted corrosion at the catalyst interface and discuss this in context of the wider CVD growth and 2DM transfer literature, thereby fostering an improved general understanding of widely used transfer processes, which is essential to numerous other applications.

Toward Clean Suspended CVD Graphene

The application of suspended graphene as electron transparent supporting media in electron microscopy, vacuum electronics, and micromechanical devices requires the least destructive and maximally clean transfer from their original growth substrate to the target of interest. Here, we use thermally evaporated anthracene films as the sacrificial layer for graphene transfer onto an arbitrary substrate. We show that clean suspended graphene can be achieved via desorbing the anthracene layer at temperatures in the 100 °C to 150 °C range, followed by two sequential annealing steps for the final cleaning, using Pt catalyst and activated carbon. The cleanliness of the suspended graphene membranes was analyzed employing the high surface sensitivity of low energy scanning electron microscopy and x-ray photoelectron spectroscopy. A quantitative comparison with two other commonly used transfer methods revealed the superiority of the anthracene approach to obtain larger area of clean, suspended CVD graphene. Our graphene transfer method based on anthracene paves the way for integrating cleaner graphene in various types of complex devices, including the ones that are heat and humidity sensitive.

Progress and Challenges in Transfer of Large-Area Graphene Films

Graphene, the thinnest, strongest, and stiffest material with exceptional thermal conductivity and electron mobility, has increasingly received world-wide attention in the past few years. These unique properties may lead to novel or improved technologies to address the pressing global challenges in many applications including transparent conducting electrodes, field effect transistors, flexible touch screen, single-molecule gas detection, desalination, DNA sequencing, osmotic energy production, etc. To realize these applications, it is necessary to transfer graphene films from growth substrate to target substrate with large-area, clean, and low defect surface, which are crucial to the performances of large-area graphene devices. This critical review assesses the recent development in transferring large-area graphene grown on Fe, Ru, Co, Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized methods. Among them, the transfers of the most attention kinds of graphene synthesized on Cu and SiC substrates are discussed emphatically. The advances and the main challenges of each wet and dry transfer method for obtaining the transferred graphene film with large-area, clean, and low defect surface are also reviewed. Finally, the article concludes the most promising methods and the further prospects of graphene transfer.

High Pseudocapacitive Performance of MnO2 Nanowires on Recyclable Electrodes

Manganese oxides are promising pseudocapacitve materials for achieving both high power and energy densities in pseudocapacitors. However, it remains a great challenge to develop MnO2 -based high-performance electrodes due to their low electrical conductance and poor stability. Here we show that MnO2 nanowires anchored on electrochemically modified graphite foil (EMGF) have a high areal capacitance of 167 mF cm(-2) at a discharge current density of 0.2 mA cm(-2) and a high capacitance retention after 5000 charge/discharge cycles (115 %), which are among the best values reported for any MnO2 -based hybrid structures. The EMGF support can also be recycled and the newly deposited MnO2 -based hybrids retain similarly high performance. These results demonstrate the successful preparation of pseudocapacitors with high capacity and cycling stability, which may open a new opportunity towards a sustainable and environmentally friendly method of utilizing electrochemical energy storage devices.

Graphene and its electrochemistry - an update

The electrochemistry of graphene and its derivatives has been extensively researched in recent years. In the aspect of graphene preparation methods, the efficiencies of the top-down electrochemical exfoliation of graphite, the electrochemical reduction of graphene oxide and the electrochemical delamination of CVD grown graphene, are currently on par with conventional procedures. Electrochemical analysis of graphene oxide has revealed an unexpected inherent redox activity with, in some cases, an astonishing chemical reversibility. Furthermore, graphene modified with p-block elements has shown impressive electrocatalytic performances in processes which have been historically dominated by metal-based catalysts. Further progress has also been achieved in the practical usage of graphene in sensing and biosensing applications. This review is an update of our previous article in Chem. Soc. Rev. 2010, 39, 4146-4157, with special focus on the developments over the past two years.

Versatile Polymer-Free Graphene Transfer Method and Applications

A new method for transferring chemical vapor deposition (CVD)-grown monolayer graphene to a variety of substrates is described. The method makes use of an organic/aqueous biphasic configuration, avoiding the use of any polymeric materials that can cause severe contamination problems. The graphene-coated copper foil sample (on which graphene was grown) sits at the interface between hexane and an aqueous etching solution of ammonium persulfate to remove the copper. With the aid of an Si/SiO2 substrate, the graphene layer is then transferred to a second hexane/water interface to remove etching products. From this new location, CVD graphene is readily transferred to arbitrary substrates, including three-dimensional architectures as represented by atomic force microscopy (AFM) tips and transmission electron microscopy (TEM) grids. Graphene produces a conformal layer on AFM tips, to the very end, allowing easy production of tips for conductive AFM imaging. Graphene transferred to copper TEM grids provides large-area, highly electron-transparent substrates for TEM imaging. These substrates can also be used as working electrodes for electrochemistry and high-resolution wetting studies. By using scanning electrochemical cell microscopy, it is possible to make electrochemical and wetting measurements at either a freestanding graphene film or a copper-supported graphene area and readily determine any differences in behavior.

Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns

We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.

Roll-to-Roll Green Transfer of CVD Graphene onto Plastic for a Transparent and Flexible Triboelectric Nanogenerator

A novel roll-to-roll, etching-free, clean transfer of CVD-grown graphene from copper to plastic using surface-energy-assisted delamination in hot deionized water is reported. The delamination process is realized by water penetration between the hydrophobic graphene and a hydrophilic native oxide layer on a copper foil.The transferred graphene on plastic is used as a high-output flexible and transparent triboelectric nanogenerator.

A case study: effect of defects in CVD-grown graphene on graphene enhanced Raman spectroscopy

PMMA-transferred graphene provides much larger GERS signal enhancement than TRT-transferred graphene.