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Rani S, Das S, Siddiqui SA, Jain A, Rani D, Pahuja M, Chaudhary N, Afshan M, Ghosh R, Swadia D, Riyajuddin SK, Bera C, Ghosh K. Harnessing Environmental Sensitivity in SnSe-Based Metal-Semiconductor-Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:26899-26914. [PMID: 38741334 DOI: 10.1021/acsami.4c02539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The extreme sensitivity of 2D-layered materials to environmental adsorbates, which is typically seen as a challenge, is harnessed in this study to fine-tune the material properties. This work investigates the impact of environmental adsorbates on electrical properties by studying metal-semiconductor-metal (MSM) devices fabricated on CVD-synthesized SnSe flakes. The freshly prepared devices exhibit positive photoconductivity (PPC), whereas they gradually develop negative photoconductivity (NPC) after being exposed to an ambient environment for ∼1 day. While the photodetectors based on positive photoconductivity exhibit a responsivity and detectivity of 6.1 A/W and 5.06 × 108 Jones, the same for the negative photoconductivity-based photodetector reaches up to 36.3 A/W and 1.49 × 109 Jones, respectively. In addition, the noise-equivalent power of the NPC photodetector decreases by 300 times as compared to the PPC device, which implies a prominent detection capability of the NPC device against weak photo signals. To substantiate the hypothesis that negative photoconductivity stems from the photodesorption of water and oxygen molecules on the dangling bonds of SnSe flakes, the flakes are etched along the most active planes (010) with a focused laser beam in an inert environment, which enhances responsivity by 43%, supporting negative photoconductivity linked to photodesorption. Furthermore, the humidity-dependent dark current variation of the NPC photodetectors is used to design a humidity sensor for human respiration monitoring with faster response and recovery times of 0.72 and 0.68 s, respectively. These findings open up the possibility of tuning the photoelectrical response of layered materials in a facile manner to develop future sensors and optoelectronic multifunctional devices.
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Affiliation(s)
- Seema Rani
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Subhabrata Das
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Shumile Ahmed Siddiqui
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Ayushi Jain
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Daya Rani
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Mansi Pahuja
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Nikita Chaudhary
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Mohd Afshan
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Rishita Ghosh
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Devansh Swadia
- Indian Institute of Science Education and Research Mohali, Knowledge City-Sector 81, Mohali 140306, India
| | - S K Riyajuddin
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Chandan Bera
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
| | - Kaushik Ghosh
- Quantum Materials & Devices Unit, Institute of Nano Science and Technology, Knowledge City-Sector 81, Mohali 140306, India
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2
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Zhao Y, Zhang H, Li Y, Ma C, Tian W, Qi X, Han G, Shao Z. Synergistic γ-In 2 Se 3 @rGO Nanocomposites with Beneficial Crystal Transformation Behavior for High-Performance Sodium-Ion Batteries. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303108. [PMID: 37541307 PMCID: PMC10558666 DOI: 10.1002/advs.202303108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/02/2023] [Indexed: 08/06/2023]
Abstract
Crystal transformation of metal compound cathodes during charge/discharge processes in alkali metal-ion batteries usually generates profound impact on structural stability and electrochemical performance, while the theme in anode materials, which always occurs and completes during the first redox cycle, is rarely explored probably due to the fast transformation dynamics. Herein, for the first time, a unique crystal transformation behavior with slow dynamics in anode of sodium-ion batteries (SIBs) is reported, which further promotes electrochemical performance. Specifically, irreversible γ → β crystal transformation of In2 Se3 is observed, induced by the persistent size degradation of In2 Se3 particles during repeated sodiation/desodiation, supported by a series of ex situ characterizations, such as HRTEM, XRD, and XPS of γ-In2 Se3 /reduced graphene oxide (γ-In2 Se3 @rGO) nanocomposite. The hybrid electrode shows ultrahigh long-term cycling stability (378 mA h g-1 at 1.0 A g-1 after 1000 cycles) and excellent rate capability (272 mA h g-1 at 20.0 A g-1 ). Full battery with Na3 V2 (PO4 )3 cathode also manifests superior performance, promising β-In2 Se3 dominated electrode materials in high-power and long-life SIBs. The first-principle calculations suggest the crystal transformation enhances electric conductivity of β-In2 Se3 and facilitates its accessibility to sodium. In combination with the synergistic effect between rGO matrix, substantially enhanced electrochemical performance is realized.
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Affiliation(s)
- Yun Zhao
- Institute of Molecular ScienceKey Laboratory of Materials for Energy Conversion and Storage of Shanxi ProvinceKey Laboratory of Chemical Biology and Molecular Engineering of Education MinistryShanxi UniversityTaiyuan030006P. R. China
- Shanxi‐Zheda Institute of Advanced Materials and Chemical EngineeringTaiyuan030006P. R. China
| | - Haoyue Zhang
- Institute of Molecular ScienceKey Laboratory of Materials for Energy Conversion and Storage of Shanxi ProvinceKey Laboratory of Chemical Biology and Molecular Engineering of Education MinistryShanxi UniversityTaiyuan030006P. R. China
| | - Yong Li
- Research Center for Fine Chemicals EngineeringShanxi UniversityTaiyuan030006P. R. China
| | - Canliang Ma
- Institute of Molecular ScienceKey Laboratory of Materials for Energy Conversion and Storage of Shanxi ProvinceKey Laboratory of Chemical Biology and Molecular Engineering of Education MinistryShanxi UniversityTaiyuan030006P. R. China
| | - Wenjuan Tian
- Institute of Molecular ScienceKey Laboratory of Materials for Energy Conversion and Storage of Shanxi ProvinceKey Laboratory of Chemical Biology and Molecular Engineering of Education MinistryShanxi UniversityTaiyuan030006P. R. China
| | - Xingguo Qi
- Shanxi Huana Carbon Energy Technology Co. Ltd.Taiyuan030006P. R. China
| | - Gaoyi Han
- Institute of Molecular ScienceKey Laboratory of Materials for Energy Conversion and Storage of Shanxi ProvinceKey Laboratory of Chemical Biology and Molecular Engineering of Education MinistryShanxi UniversityTaiyuan030006P. R. China
| | - Zongping Shao
- WA School of Mines: Minerals Energy and Chemical Engineering (WASM‐MECE)Curtin UniversityPerthWA 6102Australia
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3
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Jia C, Wu S, Fan J, Luo C, Fan M, Li M, He L, Yang Y, Zhang H. Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In 2Se 3/Si Heterojunction Photodetector. ACS NANO 2023; 17:6534-6544. [PMID: 36952315 PMCID: PMC10100568 DOI: 10.1021/acsnano.2c11925] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
Photodetectors have been applied to pivotal optoelectronic components of modern optical communication, sensing, and imaging systems. As a room-temperature ferroelectric van der Waals semiconductor, 2D α-In2Se3 is a promising candidate for a next-generation optoelectronic material because of its thickness-dependent direct bandgap and excellent optoelectronic performance. Previous studies of photodetectors based on α-In2Se3 have been rarely focused on the modulated relationship between the α-In2Se3 intrinsic ferroelectricity and photoresponsivity. Herein, a simple integrated process and high-performance photodetector based on an α-In2Se3/Si vertical hybrid-dimensional heterojunction was constructed. Our photodetector in the ferroelectric polarization up state accomplishes a self-powered, highly sensitive photoresponse with an on/off ratio of 4.5 × 105 and detectivity of 1.6 × 1013 Jones, and it also shows a fast response time with 43 μs. The depolarization field generated by the remanent polarization of ferroelectrics in α-In2Se3 provides a strategy for enhancement and modulation of photodetection. The negative correlation was discovered because the enhancement photoresponsivity factor of ferroelectric modulation competes with the photovoltaic behavior within the α-In2Se3/Si heterojunction. Our research highlights the great potential of the high-efficiency heterojunction photodetector for future object recognition and photoelectric imaging.
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Affiliation(s)
- Cheng Jia
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Shuangxiang Wu
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Jinze Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Chaojie Luo
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Minghui Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ming Li
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lanping He
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Yuanjun Yang
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Hui Zhang
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
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4
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Li J, Li H, Niu X, Wang Z. Low-Dimensional In 2Se 3 Compounds: From Material Preparations to Device Applications. ACS NANO 2021; 15:18683-18707. [PMID: 34870407 DOI: 10.1021/acsnano.1c03836] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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Affiliation(s)
- Junye Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Handong Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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5
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Anandan M, Hsieh HF, Liu FC, Chen CY, Lee KY, Chao LC, Ho CH, Chen RS. High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2Se 3 nanosheet photodetectors. NANOTECHNOLOGY 2020; 31:465201. [PMID: 32845871 DOI: 10.1088/1361-6528/abac7e] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photoconductivities (PCs) with high responsivity in two-dimensional (2D) diindium triselenide (In2Se3) nanostructures with α-phase hexagonal structure were studied. The In2Se3 nanosheet photodetectors fabricated by focused-ion beam technique exhibit broad spectral response with wavelength range from 300 nm to 1000 nm. The In2Se3 nanosheets achieve optimal responsivity of 720 A W-1 in near-infrared region (808 nm), and detectivity of 2.2 × 1012 Jones, which were higher than several 2D material photodetectors. The physical origins that result in high photoresponse in In2Se3 nanosheets such as carrier lifetime and mobility were also characterized by time-resolved PC and field-effect transistor measurements. The fast (hundred microseconds to milliseconds) and slow (seconds and longer) current rise or decay processes were both observed during the photoresponse. The narrowing (or relaxation) of depletion region and oxygen-sensitized photoconduction mechanism were suggested to be the causes of the efficient photoresponse in the In2Se3 nanostructure detectors. All these observations suggest that α-In2Se3 nanosheets could be a promising candidate for photosensitive material applications.
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Affiliation(s)
- Manickam Anandan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
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6
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Li X, Sun T, Zhou K, Hong X, Tang X, Wei D, Feng W, Shen J, Wei D. Broadband InSb/Si heterojunction photodetector with graphene transparent electrode. NANOTECHNOLOGY 2020; 31:315204. [PMID: 32272469 DOI: 10.1088/1361-6528/ab884c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 µm due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 [Formula: see text]1012 cm Hz1/2 W-1, responsivity of 132 mA W-1, on/off ratio of 1 [Formula: see text]105, rise time of 2 µs, 3 dB cut-off frequency of 172 kHz, and response wavelengths covering 635 nm, 1.55 µm and 2.7 µm. This report proves that graphene as a transparent electrode has a great effect on the performance improvement of silicon-based compound semiconductor heterojunction photodetectors.
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Affiliation(s)
- Xiaoxia Li
- College of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China. Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China
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7
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Ouyang L, Armstrong JPK, Chen Q, Lin Y, Stevens MM. Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion. ADVANCED FUNCTIONAL MATERIALS 2020; 30:1909009. [PMID: 35677899 DOI: 10.1002/adfm.201909909] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Indexed: 05/21/2023]
Abstract
Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.
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Affiliation(s)
- Liliang Ouyang
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - James P K Armstrong
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Qu Chen
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Yiyang Lin
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Molly M Stevens
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
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8
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Kou Y, Chen L, Mu J, Miao H, Wang Y, Hu X, Teng F. Catalyst-free growth of dense γ-In 2Se 3 nanosheet arrays and their application in photoelectric detectors. NANOTECHNOLOGY 2020; 31:195601. [PMID: 31899909 DOI: 10.1088/1361-6528/ab674a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, a dense γ-In2Se3 nanosheet array has been fabricated using the chemical vapor deposition method under atmospheric pressure. Compared with crystal silicon, the photodetector based on the γ-In2Se3/p-Si heterojunction exhibits a high responsivity (96.7 mA W-1) at the near-infrared region, a presentable current on/off ratio (∼1000) and excellent detectivity (2.03 × 1012 jones). Simultaneously, the obtained photodetector demonstrated a fast response speed (0.15 ms/0.5 ms) and a broadband sensitive wavelength from ultraviolet (340 nm) to near-infrared (1020 nm). The photoelectric experimental data of the device shows that its high performance is attributed to the high-light absorption capacity of the material, the rational energy band structures of γ-In2Se3 and p-Si, and the effective separation of photo-generated carriers caused by the formed type-II heterojunction. Our work provides the primary experimental basis for the photodetection application of the γ-In2Se3 nanostructure.
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Affiliation(s)
- Yumeng Kou
- School of Physics, Northwest University, Xi'an 710069, People's Republic of China
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9
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Shi H, Li M, Shaygan Nia A, Wang M, Park S, Zhang Z, Lohe MR, Yang S, Feng X. Ultrafast Electrochemical Synthesis of Defect-Free In 2 Se 3 Flakes for Large-Area Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907244. [PMID: 31944431 DOI: 10.1002/adma.201907244] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Revised: 12/13/2019] [Indexed: 06/10/2023]
Abstract
Because of its thickness-dependent direct bandgap and exceptional optoelectronic properties, indium(III) selenide (In2 Se3 ) has emerged as an important semiconductor for electronics and optoelectronics. However, the scalable synthesis of defect-free In2 Se3 flakes remains a significant barrier for its practical applications. Here, a facile electrochemical strategy is presented for the ultrafast delamination of bulk layered In2 Se3 crystals in nonaqueous media, resulting in high-yield (83%) production of defect-free In2 Se3 flakes with large lateral size (up to 26 µm). The intercalation of tetrahexylammonium (THA+ ) ions mainly creates stage-3 intercalated compounds in which every three layers of In2 Se3 are occupied by one layer of THA molecules. The subsequent exfoliation leads to a majority of trilayer In2 Se3 nanosheets. As a proof of concept, solution-processed, large-area (400 µm × 20 µm) thin-film photodetectors embedded with the exfoliated In2 Se3 flakes reveal ultrafast response time with a rise and decay of 41 and 39 ms, respectively, and efficient responsivity (1 mA W-1 ). Such performance surpasses most of the state-of-the-art thin-film photodetectors based on transition metal dichalcogenides.
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Affiliation(s)
- Huanhuan Shi
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - Mengmeng Li
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ali Shaygan Nia
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - Mingchao Wang
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - SangWook Park
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - Zhen Zhang
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - Martin R Lohe
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - Sheng Yang
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
| | - Xinliang Feng
- Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry, Technische Universität Dresden, Mommsenstrasse 4, 01062, Dresden, Germany
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10
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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11
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Liu H, Zhu X, Sun X, Zhu C, Huang W, Zhang X, Zheng B, Zou Z, Luo Z, Wang X, Li D, Pan A. Self-Powered Broad-band Photodetectors Based on Vertically Stacked WSe 2/Bi 2Te 3 p-n Heterojunctions. ACS NANO 2019; 13:13573-13580. [PMID: 31697469 DOI: 10.1021/acsnano.9b07563] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Semiconducting p-n heterojunctions, serving as the basic unit of modern electronic devices, such as photodetectors, solar-energy conversion devices, and light-emitting diodes (LEDs), have been extensively investigated in recent years. In this work, high performance self-powered broad-band photodetectors were fabricated based on vertically stacked p-n heterojunctions though combining p-type WSe2 with n-type Bi2Te3 via van der Waals (vdW) epitaxial growth. Devices based on the p-n heterojunction show obvious current rectification behaviors in the dark and superior photovoltaic characteristics under light irradiation. A maximum short circuit current of 18 nA and open circuit voltage of 0.25 V can be achieved with the illumination light of 633 nm (power density: 26.4 mW/cm2), which are among the highest values compared with the ever reported 2D vdW heterojunctions synthesized by chemical vapor deposition (CVD) method. Benefiting from the broad-band absorption of the heterostructures, the detection range can be expanded from the visible to near-infrared (375-1550 nm). Moreover, ascribing to the efficient carriers separation process at the junction interfaces, the devices can be further employed as self-powered photodetectors, where a fast response time (∼210 μs) and high responsivity (20.5 A/W at 633 nm and 27 mA/W at 1550 nm) are obtained under zero bias voltage. The WSe2/Bi2Te3 p-n heterojunction-based self-powered photodetectors with high photoresponsivity, fast photoresponse time, and broad spectral response will find potential applications in high speed and self-sufficient broad-band devices.
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Affiliation(s)
- Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xiaoli Zhu
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Wei Huang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xuehong Zhang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Biyuan Zheng
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Zixing Zou
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Xiao Wang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
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12
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Xiao Y, Liu L, Ma ZH, Meng B, Qin SJ, Pan GB. High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction. NANOMATERIALS 2019; 9:nano9091198. [PMID: 31454935 PMCID: PMC6780170 DOI: 10.3390/nano9091198] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2019] [Revised: 08/21/2019] [Accepted: 08/21/2019] [Indexed: 11/16/2022]
Abstract
Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm−2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.
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Affiliation(s)
- Yan Xiao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lin Liu
- Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
- Department of Health and Environmental Sciences, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Zhi-Hao Ma
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Bo Meng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Su-Jie Qin
- Department of Health and Environmental Sciences, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
| | - Ge-Bo Pan
- Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China.
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13
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Ghamgosar P, Rigoni F, Kohan MG, You S, Morales EA, Mazzaro R, Morandi V, Almqvist N, Concina I, Vomiero A. Self-Powered Photodetectors Based on Core-Shell ZnO-Co 3O 4 Nanowire Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23454-23462. [PMID: 31252456 DOI: 10.1021/acsami.9b04838] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Self-powered photodetectors operating in the UV-visible-NIR window made of environmentally friendly, earth abundant, and cheap materials are appealing systems to exploit natural solar radiation without external power sources. In this study, we propose a new p-n junction nanostructure, based on a ZnO-Co3O4 core-shell nanowire (NW) system, with a suitable electronic band structure and improved light absorption, charge transport, and charge collection, to build an efficient UV-visible-NIR p-n heterojunction photodetector. Ultrathin Co3O4 films (in the range 1-15 nm) were sputter-deposited on hydrothermally grown ZnO NW arrays. The effect of a thin layer of the Al2O3 buffer layer between ZnO and Co3O4 was investigated, which may inhibit charge recombination, boosting device performance. The photoresponse of the ZnO-Al2O3-Co3O4 system at zero bias is 6 times higher compared to that of ZnO-Co3O4. The responsivity ( R) and specific detectivity ( D*) of the best device were 21.80 mA W-1 and 4.12 × 1012 Jones, respectively. These results suggest a novel p-n junction structure to develop all-oxide UV-vis photodetectors based on stable, nontoxic, low-cost materials.
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Affiliation(s)
- Pedram Ghamgosar
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Federica Rigoni
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Mojtaba Gilzad Kohan
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Shujie You
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Edgar Abarca Morales
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Raffaello Mazzaro
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Vittorio Morandi
- Institute for Microelectronics and Microsystems Section of Bologna , National Research Council , Via P. Gobetti, 101 , I-40129 Bologna , Italy
| | - Nils Almqvist
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Isabella Concina
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
| | - Alberto Vomiero
- Department of Engineering Sciences and Mathematics, Division of Materials Science , Luleå University of Technology , 97187 Luleå , Sweden
- Department of Molecular Sciences and Nanosystems , Ca' Foscari University of Venice , Via Torino 155 , 30170 Venezia Mestre , Italy
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14
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Yuan Y, Zhang L, Yan G, Cen G, Liu Y, Zeng L, Zeng C, Zhao C, Hong R, Mai W. Significantly Enhanced Detectivity of CIGS Broadband High-Speed Photodetectors by Grain Size Control and ALD-Al 2O 3 Interfacial-Layer Modification. ACS APPLIED MATERIALS & INTERFACES 2019; 11:20157-20166. [PMID: 31070353 DOI: 10.1021/acsami.9b04248] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The Cu(In,Ga)Se2 (CIGS) thin film has been commercialized as solar cells with great success, but its application for photodetectors still faces some practical challenges, including low detectivity and long response time. In this paper, the structure of the Mo/CIGS/CdS/ZnO/ITO heterojunction has been fabricated, and satisfactory performances of high detectivity and fast response time have been achieved by suppressing the dark current and enhancing the carrier mobility. The controllable growth of CIGS grains is accomplished through optimizing the selenization process, demonstrating that bigger grain sizes resulted in higher carrier mobility and better response characteristics. Particularly, the high rise/decay speed of 3.40/6.46 μs is achieved. Furthermore, the interface of the CIGS/CdS heterojunction has been modified by the Al2O3 layer via the atomic-layer deposition (ALD) process. The dark current of the device is effectively suppressed by the ALD-Al2O3 layer, which remarkably drops from ∼10-7 to ∼10-9 A. As a consequence, the detectivity rises from 3.08 × 1011 to 1.84 × 1012 Jones. In addition, the ALD-Al2O3 layer shows a protective effect as well, which is positive for photoelectrical conversion. Besides, the wide linear dynamic range of 102.1 dB and large -3 dB bandwidth of 78 kHz are acquired. This work suggests that the CIGS-based heterojunction has great potential for high-performance thin-film photodetectors.
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Affiliation(s)
- Ye Yuan
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics , Jinan University , Guangzhou 510632 , P. R. China
| | - Linquan Zhang
- Institute of Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics , Sun Yat-sen University , Guangzhou 510006 , P. R. China
| | - Genghua Yan
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics , Jinan University , Guangzhou 510632 , P. R. China
| | - Guobiao Cen
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics , Jinan University , Guangzhou 510632 , P. R. China
| | - Yujin Liu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics , Jinan University , Guangzhou 510632 , P. R. China
| | - Longlong Zeng
- Institute of Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics , Sun Yat-sen University , Guangzhou 510006 , P. R. China
| | - Chunhong Zeng
- Institute of Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics , Sun Yat-sen University , Guangzhou 510006 , P. R. China
| | - Chuanxi Zhao
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics , Jinan University , Guangzhou 510632 , P. R. China
| | - Ruijiang Hong
- Institute of Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics , Sun Yat-sen University , Guangzhou 510006 , P. R. China
| | - Wenjie Mai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics , Jinan University , Guangzhou 510632 , P. R. China
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15
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Chen L, Tian W, Sun C, Cao F, Li L. Structural Engineering of Si/TiO 2/P3HT Heterojunction Photodetectors for a Tunable Response Range. ACS APPLIED MATERIALS & INTERFACES 2019; 11:3241-3250. [PMID: 30589530 DOI: 10.1021/acsami.8b20182] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
To meet the demands of next-generation optoelectronic circuits, the design and construction of photodetectors with a tunable photoresponse range and self-powered feature are urgently required. To achieve selective wavelength detection, a band-pass filter is usually required to dislodge the interference of a certain wavelength light, which inevitably enhances the weight and increases the cost. Here, we demonstrate a self-powered photodetector with a tunable response range by constructing a heterojunction structure consisting of poly(3-hexylthiophene) (P3HT), a TiO2 interlayer, and silicon nanowires. By controlling the P3HT concentration, both core-shell and embedded configurations can be obtained, which exhibit different response ranges. This work provides a convenient route to construct self-powered wavelength-selective photodetectors, which may find applications in light communication and biomedical engineering.
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Affiliation(s)
- Liang Chen
- School of Physical Science and Technology, Center for Energy Conversion Materials & Physics, Jiangsu Key Laboratory of Thin Films , Soochow University , Suzhou 215006 , P. R. China
| | - Wei Tian
- School of Physical Science and Technology, Center for Energy Conversion Materials & Physics, Jiangsu Key Laboratory of Thin Films , Soochow University , Suzhou 215006 , P. R. China
| | - Chaoxiang Sun
- School of Physical Science and Technology, Center for Energy Conversion Materials & Physics, Jiangsu Key Laboratory of Thin Films , Soochow University , Suzhou 215006 , P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Center for Energy Conversion Materials & Physics, Jiangsu Key Laboratory of Thin Films , Soochow University , Suzhou 215006 , P. R. China
| | - Liang Li
- School of Physical Science and Technology, Center for Energy Conversion Materials & Physics, Jiangsu Key Laboratory of Thin Films , Soochow University , Suzhou 215006 , P. R. China
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16
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Kim H, Kim W, Park J, Lim N, Lee R, Cho SJ, Kumaresan Y, Oh MK, Jung GY. Surface conversion of ZnO nanorods to ZIF-8 to suppress surface defects for a visible-blind UV photodetector. NANOSCALE 2018; 10:21168-21177. [PMID: 30411778 DOI: 10.1039/c8nr06701e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
ZnO nanomaterials are promising building blocks for an efficient UV photodetector; however, their slow sensing behavior and undesired response to visible light, which are attributed to surface defects, such as oxygen or zinc vacancies, are challenges that remain to be addressed. Here, we transformed the ZnO nanorod surface into a zeolitic imidazolate framework-8 (ZIF-8) to eliminate ZnO surface defects. Vertical-type photodetectors were fabricated incorporating a Schottky junction at the ZIF-8/gold (Au) top electrode and could respond to UV light with a rapid response and recovery (1-2 s) and demonstrated a UV-to-visible rejection ratio in the order of 103, qualifying them as efficient visible-blind UV photodetectors. It is noteworthy that the ZIF-8 layer effectively separated the photogenerated electron-hole pairs, and thus reduced their recombination probability. The enhanced photodetector displayed excellent figures-of-merit: a responsivity of 291 A W-1 and a detectivity of 5.9 × 1013 cm Hz1/2 W-1 under illumination at 295 nm.
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Affiliation(s)
- Hyeonghun Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
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17
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Kim Y, Kwon S, Seo EJ, Nam JH, Jang HY, Kwon SH, Kwon JD, Kim DW, Cho B. Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36136-36143. [PMID: 30261138 DOI: 10.1021/acsami.8b12896] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A growth technique to directly prepare two-dimensional (2D) materials onto conventional semiconductor substrates, enabling low-temperature, high-throughput, and large-area capability, is needed to realize competitive 2D transition-metal dichalcogenide (TMD)/three-dimensional (3D) semiconductor heterojunction devices. Therefore, we herein successfully developed an atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique, which could grow MoS2 and WS2 multilayers directly onto PET flexible substrate as well as 4-in. Si substrates at temperatures of <200 °C. The as-fabricated MoS2/Si and WS2/Si heterojunctions exhibited large and fast photocurrent responses under illumination of a green light. The measured photocurrent was linearly proportional to the laser power, indicating that trapping and detrapping of the photogenerated carriers at defect states could not significantly suppress the collection of photocarriers. All the results demonstrated that our AP-PECVD method could produce high-quality TMD/Si 2D-3D heterojunctions for optoelectronic applications.
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Affiliation(s)
- Yonghun Kim
- Materials Center for Energy Convergence, Surface Technology Division , Korea Institute of Material Science (KIMS) , 797 Changwondaero , Sungsan-gu, Changwon , Gyongnam 51508 , Republic of Korea
| | - Soyeong Kwon
- Department of Physics , Ewha Womans University , 52 Ewhayeodae-gil , Seodaemun-gu, Seoul 03760 , Republic of Korea
| | - Eun-Joo Seo
- Materials Center for Energy Convergence, Surface Technology Division , Korea Institute of Material Science (KIMS) , 797 Changwondaero , Sungsan-gu, Changwon , Gyongnam 51508 , Republic of Korea
| | - Jae Hyeon Nam
- Department of Advanced Material Engineering , Chungbuk National University , Chungdae-ro 1 , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
| | - Hye Yeon Jang
- Department of Advanced Material Engineering , Chungbuk National University , Chungdae-ro 1 , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
| | - Se-Hun Kwon
- School of Materials Science and Engineering , Pusan National University , 30 Jangjeon-dong , Geumjeong-gu, Busan 46241 , Republic of Korea
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Surface Technology Division , Korea Institute of Material Science (KIMS) , 797 Changwondaero , Sungsan-gu, Changwon , Gyongnam 51508 , Republic of Korea
| | - Dong-Wook Kim
- Department of Physics , Ewha Womans University , 52 Ewhayeodae-gil , Seodaemun-gu, Seoul 03760 , Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering , Chungbuk National University , Chungdae-ro 1 , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
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18
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Küpers M, Konze PM, Meledin A, Mayer J, Englert U, Wuttig M, Dronskowski R. Controlled Crystal Growth of Indium Selenide, In2Se3, and the Crystal Structures of α-In2Se3. Inorg Chem 2018; 57:11775-11781. [DOI: 10.1021/acs.inorgchem.8b01950] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
| | | | - Alexander Meledin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Joachim Mayer
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | | | - Matthias Wuttig
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056 Aachen, Germany
- JARA-Institute: Energy-Efficient Information Technology (Green IT), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
- Jülich-Aachen Research Alliance (JARA-FIT and JARA-HPC), RWTH Aachen University, 52056 Aachen, Germany
| | - Richard Dronskowski
- Jülich-Aachen Research Alliance (JARA-FIT and JARA-HPC), RWTH Aachen University, 52056 Aachen, Germany
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19
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Xie C, Zeng L, Zhang Z, Tsang YH, Luo L, Lee JH. High-performance broadband heterojunction photodetectors based on multilayered PtSe 2 directly grown on a Si substrate. NANOSCALE 2018; 10:15285-15293. [PMID: 30067253 DOI: 10.1039/c8nr04004d] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional group-10 transition metal dichalcogenides have recently attracted increasing research interest because of their unique electronic and optoelectronic properties. Herein, we present vertical hybrid heterojunctions of multilayered PtSe2 and Si, which take advantage of large-scale homogeneous PtSe2 films grown directly on Si substrates. These heterojunctions show obvious rectifying behavior and a pronounced photovoltaic effect, enabling them to function as self-driven photodetectors operating at zero bias. The photodetectors can operate in both photovoltage and photocurrent modes, with responsivity values as high as 5.26 × 106 V W-1 and 520 mA W-1 at 808 nm, respectively. The Ilight/Idark ratio, specific detectivity, and response speed are 1.5 × 105, 3.26 × 1013 Jones, and 55.3/170.5 μs, respectively. Furthermore, the heterojunctions are highly sensitive in a broad spectral region ranging from deep ultraviolet to near-infrared (NIR) (200-1550 nm). Because of the strong NIR light absorption of PtSe2, the heterojunctions exhibit photocurrent responsivities of 33.25 and 0.57 mA W-1 at telecommunication wavelengths of 1310 and 1550 nm, respectively. Considering the excellent performance of the PtSe2/Si heterojunctions, they are highly suitable for application in high-performance broadband photodetectors. The generality of the above results also signifies that the proposed in situ synthesis method has great potential for future large-scale optoelectronic device integration.
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Affiliation(s)
- Chao Xie
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
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20
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Understanding of MoS 2/GaN Heterojunction Diode and its Photodetection Properties. Sci Rep 2018; 8:11799. [PMID: 30087388 PMCID: PMC6081413 DOI: 10.1038/s41598-018-30237-8] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2018] [Accepted: 07/11/2018] [Indexed: 11/08/2022] Open
Abstract
Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS2/GaN heterojunction is done using Kelvin Probe Force Microscopy to measure the conduction band offset. Current-voltage measurements show a diode like behavior of the heterojunction. The origin of diode like behavior is attributed to unique type II band alignment of the heterojunction. The photocurrent, photoresponsivity and detectivity of the heterojunction are found to be dependent on power density of the light. Photoresponse investigations reveal that the heterojunction is highly sensitive to 405 nm laser with very high responsivity up to 105 A/W. The heterojunction also shows very high detectivity of the order of 1014 Jones. Moreover, the device shows photoresponse in UV region also. These observations suggest that MoS2/GaN heterojunction can have great potential for photodetection applications.
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21
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Fang YX, Zhang H, Azad F, Wang SP, Ling FCC, Su SC. Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures. RSC Adv 2018; 8:29555-29561. [PMID: 35547303 PMCID: PMC9085293 DOI: 10.1039/c8ra05677c] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2018] [Accepted: 08/13/2018] [Indexed: 11/21/2022] Open
Abstract
High-quality γ-In2Se3 thin films and a γ-In2Se3/p-Si heterojunction were prepared using pulse laser deposition (PLD).
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Affiliation(s)
- Y. X. Fang
- Institute of Optoelectronic Material and Technology
- South China Normal University
- Guangzhou 510631
- P. R. China
| | - H. Zhang
- Institute of Optoelectronic Material and Technology
- South China Normal University
- Guangzhou 510631
- P. R. China
| | - F. Azad
- School of Natural Sciences (SNS)
- National University of Sciences and Technology (NUST)
- H-12 Islamabad
- Pakistan
| | - S. P. Wang
- Institute of Applied Physics and Materials Engineering
- University of Macau
- China
| | - F. C. C. Ling
- Department of Physics
- The University of Hong Kong
- Hong Kong
- People's Republic of China
| | - S. C. Su
- Institute of Optoelectronic Material and Technology
- South China Normal University
- Guangzhou 510631
- P. R. China
- Department of Physics
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22
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Tian W, Wang Y, Chen L, Li L. Self-Powered Nanoscale Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701848. [PMID: 28991402 DOI: 10.1002/smll.201701848] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2017] [Revised: 08/02/2017] [Indexed: 06/07/2023]
Abstract
Novel self-powered nanoscale photodetectors that can work without an external power source, which have great application potential in next-generation nanodevices that operate wirelessly and independently, are being widely studied. This review aims to give a comprehensive summary of the state-of-the-art research results on self-powered nanoscale photodetectors. An introduction of recent progress on Schottky junction photodetectors is provided. Two types of Schottky junctions are discussed in detail: metal-semiconductor and semiconductor-graphene junctions. Next, recent developments of p-n junction photodetectors are highlighted, including homojunction and heterojunction photodetectors. Then, piezo-phototronic effect enhanced photodetection performances of Schottky junctions and p-n junctions are discussed. Then, significant results on the photoelectrochemical-cell-based photodetector and integrated self-powered nanosystem are presented, followed by a systematic comparison of different types of photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. The hope is that this review can provide valuable insights into the current status of self-powered photodetectors and spur new structure and device designs to further enhance photodetection performance.
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Affiliation(s)
- Wei Tian
- College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Yidan Wang
- College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Liang Chen
- College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- College of Physics, Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
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