2D Metal Chalcogenides for IR Photodetection

Self-Powered Infrared-Detectable BP/Ta2NiS5 Heterojunction and Its Application in Energy-Efficient Optoelectronic Synapses

The development of energy-efficient and high-performance optoelectronic devices is crucial for the advancement of modern optoelectronic and microelectronic systems. Although the self-powered devices and optoelectronic synapses based on 2D heterojunction show great application prospects, the high energy consumption and infrared band detection of self-powered optoelectronic synapses are still an urgent problem to be solved. In this report, a BP/Ta2NiS5 heterojunction is constructed to achieve infrared detection by leveraging differences in Fermi energy levels. This heterojunction exhibits a high specific detectivity of 6.57 × 1010, 2.6 × 1010, and 1.12 × 1010 Jones and responsivity of 20, 10.6, and 5.9 mA W-1 for 1064, 1550, and 2200 nm infrared light at 0 bias voltage, respectively. In addition, under the 2200 nm light, by applying an ultra-low bias voltage of 800 µV, the heterojunction exhibits ultra-low power and energy consumption of 28.8 pW and 0.64 pJ, successfully simulates a variety of synaptic behaviors under infrared light, and demonstrates its image perception and image memory capabilities. These findings position the BP/Ta2NiS5 heterojunction as an ideal candidate for a multifunctional optoelectronic device crucial for advanced photodetection, neuromorphic computing, and artificial intelligence.

Highly DUV to NIR-II responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators

Low-cost, high-performance, and uncooled broadband photodetectors (PDs) have potential applications in optical communication etc., but it still remains a huge challenge to realize deep UV (DUV) to the second near-infrared (NIR-II) detection for a single broadband PD. Herein, a single PD affording broadband spectral response from 200 to 1700 nm is achieved with a vertical configuration based on quantum dots (QDs) heterojunction and quantum cutting luminescent concentrators (QC-LC). A broadband quantum dots heterojunction as absorption layer was designed by integrating CsPbI3:Ho3+ perovskite quantum dots (PQDs) and PbS QDs to realize the spectral response from 400 to 1700 nm. The QC-LC by employing CsPbCl3:Cr3+, Ce3+, Yb3+, Er3+ PQDs as luminescent conversion layer to collect and concentrate photon energy for boosting the DUV-UV (200-400 nm) photons response of PDs by waveguide effect. Such broadband PD displays good stability, and outstanding sensitivity with the detectivity of 3.19 × 1012 Jones at 260 nm, 1.05 × 1013 Jones at 460 nm and 2.23 × 1012 Jones at 1550 nm, respectively. The findings provide a new strategy to construct broadband detector, offering more opportunities in future optoelectronic devices.

Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2thin film for infrared detection

In the field of electronic and optoelectronic applications, two-dimensional materials are found to be promising candidates for futuristic devices. For the detection of infrared (IR) light, MoTe2possesses an appropriate bandgap for which p-MoTe2/n-Si heterojunctions are well suited for photodetectors. In this study, a rapid thermal technique is used to grow MoTe2thin films on silicon (Si) substrates. Molybdenum (Mo) thin films are deposited using a sputtering system on the Si substrate and tellurium (Te) film is deposited on the Mo film by a thermal evaporation technique. The substrates with Mo/Te thin films are kept in a face-to-face manner inside the rapid thermal-processing furnace. The growth is carried out at a base pressure of 2 torr with a flow of 160 sccm of argon gas at different temperatures ranging from 400 °C to 700 °C. The x-ray diffraction peaks appear around 2θ= 12.8°, 25.5°, 39.2°, and 53.2° corresponding to (002), (004), (006), and (008) orientation of a hexagonal 2H-MoTe2structure. The characteristic Raman peaks of MoTe2, observed at ∼119 cm-1and ∼172 cm-1, correspond to the in-plane E1gand out-of-plane A1gmodes of MoTe2, whereas the prominent peaks of the in-plane E12gmode at ∼234 cm-1and the out-of-plane B12gmode at ∼289 cm-1are also observed. Root mean square (RMS) roughness is found to increase with increasing growth temperature. The bandgap of MoTe2is calculated using a Tauc plot and is found to be 0.90 eV. Electrical characterizations are carried out using current-voltage and current-time measurement, where the maximum responsivity and detectivity are found to be 127.37 mA W-1and 85.21 × 107Jones for a growth temperature of 600 °C and an IR wavelength illumination of 1060 nm.

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.

2D compounds with heterolayered architecture for infrared photodetectors

Compounds with heterolayered architecture, as a family of two-dimensional (2D) materials, are composed of alternating positive and negative layers. Their physical properties are determined not only by the charged constituents, but also by the interaction between the two layers. This kind of material has been widely used for superconductivity, thermoelectricity, energy storage, etc. In recent years, heterolayered compounds have been found as an encouraging choice for infrared photodetectors with high sensitivity, fast response, and remarkable reliability. In this review, we summarize the research progress of heterolayered materials for infrared photodetectors. A simple development history of the materials with three-dimensional (3D) or 2D structures, which are suitable for infrared photodetectors, is introduced firstly. Then, we compare the differences between van der Waals layered 2D materials and heterolayered 2D cousins and explain the advantages of heterolayered 2D compounds. Finally, we present our perspective on the future direction of heterolayered 2D materials as an emerging class of materials for infrared photodetectors.

Solution-Processable Large-Area Black Phosphorus/Reduced Graphene Oxide Schottky Junction for High-Temperature Broadband Photodetectors

2D materials-based broadband photodetectors have extensive applications in security monitoring and remote sensing fields, especially in supersonic aircraft that require reliable performance under extreme high-temperature conditions. However, the integration of large-area heterostructures with 2D materials often involves high-temperature deposition methods, and also limited options and size of substrates. Herein, a liquid-phase spin-coating method is presented based on the interface engineering to prepare larger-area Van der Waals heterojunctions of black phosphorus (BP)/reduced graphene oxide (RGO) films at room temperature on arbitrary substrates of any required size. Importantly, this method avoids the common requirement of high-temperature, and prevents the curling or stacking in 2D materials during the liquid-phase film formation. The BP/RGO films-based devices exhibit a wide spectral photo-response, ranging from the visible of 532 nm to infrared range of 2200 nm. Additionally, due to Van der Waals interface of Schottky junction, the array devices provide infrared detection at temperatures up to 400 K, with an outstanding photoresponsivity (R) of 12 A W-1 and a specific detectivity (D*) of ≈2.4 × 109 Jones. This work offers an efficient approach to fabricate large-area 2D Schottky junction films by solution-coating for high-temperature infrared photodetectors.

Metal-Organic Framework-Based Photodetectors

The unique and interesting physical and chemical properties of metal-organic framework (MOF) materials have recently attracted extensive attention in a new generation of photoelectric applications. In this review, we summarized and discussed the research progress on MOF-based photodetectors. The methods of preparing MOF-based photodetectors and various types of MOF single crystals and thin film as well as MOF composites are introduced in details. Additionally, the photodetectors applications for X-ray, ultraviolet and infrared light, biological detectors, and circularly polarized light photodetectors are discussed. Furthermore, summaries and challenges are provided for this important research field.

Rhodamine 6G/Transition Metal Dichalcogenide Hybrid Nanoscrolls for Enhanced Optoelectronic Performance

The low light absorption efficiency has seriously hindered the application of two-dimensional transition metal dichalcogenide (TMDC) nanosheets in the field of optoelectronic devices. Various approaches have been used to improve the performance of TMDC nanosheets. Preparation of one-dimensional TMDC nanoscrolls in combination with photoactive materials has been a promising method to improve their properties recently. In this work, we report a facile method to enhance the optoelectronic performance of TMDC nanoscrolls by wrapping the photoactive organic dye rhodamine (R6G) into them. After R6G molecules were deposited on monolayer TMDC nanosheets by the solution method, the R6G/MoS2 nanoscrolls with lengths up to hundreds of microns were prepared in a short time by dropping a mixture of ammonia and ethanol solution on the R6G/MoS2 nanosheets. The as-obtained R6G/MoS2 nanoscrolls were well characterized by optical microscopy, atomic force microscopy, Raman spectroscopy, and transmission electron microscopy to prove the encapsulation of R6G. There are multiple type II heterojunction interfaces in the R6G/MoS2 nanoscrolls, which can promote the generation of photo-induced carriers and the following electron-hole separation. The separated electrons were transported rapidly along the axial direction of the R6G/MoS2 nanoscrolls, which greatly improves the efficiency of light absorption and photoresponse. Under the irradiation of an incident 405 nm laser, the photoresponsivity, carrier mobility, external quantum efficiency, and detectivity of R6G/MoS2 nanoscrolls were enhanced to 66.07 A/W, 132.93 cm2V-1s-1, 20,261%, and 1.25 × 1012 cm·Hz1/2W-1, which are four orders of magnitude higher than those of monolayer MoS2 nanosheets. Our work indicates that the R6G/TMDC hybrid nanoscrolls could be promising materials for high-performance optoelectronic devices.

Prediction and simulation of a potential barrier block in Van der Waals heterojunction photodetectors

The pBp structure can effectively suppress the dark current of a photodetector by blocking the majority of carriers. However, it is a big challenge to carry out large-scale simulation optimization for two-dimensional (2D) pBp heterojunction photodetectors due to a lack of the device models. Here, a numerical simulation model of the 2D pBp heterojunction was established based on the finite element method to solve this problem. Using this model, the spatial distribution of the energy band is clarified for each layer. The concentration of nonuniformly distributed electrons, induced by the incident light and bias voltage, is obtained by solving the diffusion and drift equations. The characteristics of the photocurrent and the dark current could be presented and the quantum efficiency could be calculated by counting the ratio of the number of carriers collected at the terminals and the carriers photogenerated. The material parameters could be modified for the optimization of the simulation and prediction. In using our model, a B P/M o S 2/graphene photodetector was constructed, and the simulation results show that it works effectively under a reverse bias ranging from -0.3 to 0 V. The external quantum efficiency is 18%, while the internal efficiency approaches 85%. The doping in the barrier region definitely does not affect the dark current and the photocurrent. These results are similar to experimental results published earlier. In addition, with the BP bandgap width of 0.8 eV and incident wavelength of 1.7 µm, the dark current density predicted by the model could reach 3.3×10-8 A/c m 2, which is two orders lower than the reported 2D photodetectors at room temperature. This proposed model provides a way to design 2D pBp heterojunction photodetectors.

Fatty Amine-Mediated Synthesis of Hierarchical Copper Sulfide Nanoflowers for Efficient NIR-II Photothermal Conversion and Antibacterial Performance

Non-noble metal photothermal materials have recently attracted increasing attention as unique alternatives to noble metal-based ones due to advantages like earth abundance, cost-effectiveness, and large-scale application capability. In this study, hierarchical copper sulfide (CuS) nanostructures with tunable flower-like morphologies and dimensional sizes are prepared via a fatty amine-mediated one-pot polyol synthesis. In particular, the addition of fatty amines induces a significant decrease in the overall particle size and lamellar thickness, and their morphologies and sizes could be tuned using different types of fatty amines. The dense stacking of nanosheets with limited sizes in the form of such a unique hierarchical architecture facilitates the interactions of the electromagnetic fields between adjacent nanoplates and enables the creation of abundant hot-spot regions, thus, benefiting the enhanced second near-infrared (NIR-II) light absorptions. The optimized CuS nanoflowers exhibit a photothermal conversion efficiency of 37.6%, realizing a temperature increase of nearly 50 °C within 10 min under 1064 nm laser irradiations at a power density of 1 W cm-2. They also exhibit broad-spectrum antibacterial activity, rendering them promising candidates for combating a spectrum of bacterial infections. The present study offers a feasible strategy to generate nanosheet-based hierarchical CuS nanostructures and validates their promising use in photothermal conversion, which could find important use in NIR-II photothermal therapy.

Plasma Treatment for Achieving Oxygen Substitution in Layered MoS2 and the Room-Temperature Mid-Infrared (10 μm) Photoresponse

Highly sensitive photodetectors in the mid-infrared (MIR, 3-15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS2 for room-temperature MIR (10 μm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70-130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 107 Jones are obtained under MIR light (10 μm) illumination with an average power density of 114.6 mW/cm2. The photoresponse is attributed to the introduction of electronic states in the band gap of MoS2 through oxygen substitution. A graphene/plasma-treated MoS2/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 109 Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS2/graphene device is further demonstrated in single-detector MIR (10 μm) scanning imaging. This work offers a facile approach to constructing integrated MoS2-based MIR photodetectors.

Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor

Excitons in monolayer semiconductors, benefitting from their large binding energies, hold great potential towards excitonic circuits bridging nano-electronics and photonics. However, achieving room-temperature ultrafast on-chip electrical modulation of excitonic distribution and flow in monolayer semiconductors is nontrivial. Here, utilizing lateral bias, we report high-speed electrical modulation of the excitonic distribution in a monolayer semiconductor junction at room temperature. The alternating charge trapping/detrapping at the two monolayer/electrode interfaces induces a non-uniform carrier distribution, leading to controlled in-plane spatial variations of excitonic populations, and mimicking a bias-driven excitonic flow. This modulation increases with the bias amplitude and eventually saturates, relating to the energetic distribution of trap density of states. The switching time of the modulation is down to 5 ns, enabling high-speed excitonic devices. Our findings reveal the trap-assisted exciton engineering in monolayer semiconductors and offer great opportunities for future two-dimensional excitonic devices and circuits.

Quantum-Tuned Cascade Multijunction Infrared Photodetector

Emerging applications such as augmented reality, self-driving vehicles, and quantum information technology require optoelectronic devices capable of sensing a low number of photons with high sensitivity (including gain) and high speed and that could operate in the infrared at telecom windows beyond silicon's bandgap. State-of-the-art semiconductors achieve some of these functions through costly and not easily scalable doping and epitaxial growing methods. Colloidal quantum dots (QDs), on the other hand, could be easily tuned and are compatible with consumer electronics manufacturing. However, the development of a QD infrared photodetector with high gain and high response speed remains a challenge. Herein, we present a QD monolithic multijunction cascade photodetector that advances in the speed-sensitivity-gain space through precise control over doping and bandgap. We achieved this by implementing a QD stack in which each layer is tailored via bandgap tuning and electrostatic surface manipulation. The resulting junctions sustain enhanced local electric fields, which, upon illumination, facilitate charge tunneling, recirculation, and gain, but retain low dark currents in the absence of light. Using this platform, we demonstrate an infrared photodetector sensitive up to 1500 nm, with a specific detectivity of ∼3.7 × 1012 Jones, a 3 dB bandwidth of 300 kHz (0.05 cm2 device), and a gain of ∼70× at 1300 nm, leading to an overall gain-bandwidth product over 20 MHz, in comparison with 3 kHz of standard photodiode devices of similar areas.

The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS2 for Broad-Band Photodetection

Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broad-band wavelength excitation─especially beyond the material's nominal band gap─while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling─which we term the acoustophotoelectric effect─in SnS2 that facilitates efficient photodetection through the application of 100 MHz order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS2 but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broad-band photodetection beyond the visible light range, while maintaining pA-order dark currents─ without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to 8 orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS2-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.

Latest Innovations in 2D Flexible Nanoelectronics

2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.

Transition Metal Dichalcogenides Nanoscrolls: Preparation and Applications

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) nanosheets have shown extensive applications due to their excellent physical and chemical properties. However, the low light absorption efficiency limits their application in optoelectronics. By rolling up 2D TMDCs nanosheets, the one-dimensional (1D) TMDCs nanoscrolls are formed with spiral tubular structure, tunable interlayer spacing, and opening ends. Due to the increased thickness of the scroll structure, the light absorption is enhanced. Meanwhile, the rapid electron transportation is confined along the 1D structure. Therefore, the TMDCs nanoscrolls show improved optoelectronic performance compared to 2D nanosheets. In addition, the high specific surface area and active edge site from the bending strain of the basal plane make them promising materials for catalytic reaction. Thus, the TMDCs nanoscrolls have attracted intensive attention in recent years. In this review, the structure of TMDCs nanoscrolls is first demonstrated and followed by various preparation methods of the TMDCs nanoscrolls. Afterwards, the applications of TMDCs nanoscrolls in the fields of photodetection, hydrogen evolution reaction, and gas sensing are discussed.

Colloidal 2D Lead Chalcogenide Nanocrystals: Synthetic Strategies, Optical Properties, and Applications

Lead chalcogenide nanocrystals (NCs) are an emerging class of photoactive materials that have become a versatile tool for fabricating new generation photonics devices operating in the near-IR spectral range. NCs are presented in a wide variety of forms and sizes, each of which has its own unique features. Here, we discuss colloidal lead chalcogenide NCs in which one dimension is much smaller than the others, i.e., two-dimensional (2D) NCs. The purpose of this review is to present a complete picture of today's progress on such materials. The topic is quite complicated, as a variety of synthetic approaches result in NCs with different thicknesses and lateral sizes, which dramatically change the NCs photophysical properties. The recent advances highlighted in this review demonstrate lead chalcogenide 2D NCs as promising materials for breakthrough developments. We summarized and organized the known data, including theoretical works, to highlight the most important 2D NC features and give the basis for their interpretation.

Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices

The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.

Synergistic effects of extrinsic photoconduction and photogating in a short-wavelength ZrS3 infrared photodetector

Two-dimensional (2D) material-based photodetectors, especially those working in the infrared band, have shown great application potential in the thermal imaging, optical communication, and medicine fields. Designing 2D material photodetectors with broadened detection band and enhanced responsivity has become an attractive but challenging research direction. To solve this issue, we report a zirconium trisulfide (ZrS₃) infrared photodetector with enhanced and broadened response with the assistance of the synergistic effects of extrinsic photoconduction and photogating effect. The ZrS₃ photodetectors can detect infrared light up to 2 μm by extrinsic photoconduction and exhibit a responsivity of 100 mA W^-1 under 1550 nm illumination. Furthermore, the ZrS₃ infrared photodetectors with an oxide layer show a triple enhanced responsivity due to the photogating effect. Additionally, the infrared imaging capability of the ZrS₃ infrared photodetectors is also demonstrated. This work provides a potential way to extend the response range and improve the responsivity for nanomaterial-based photodetectors at the same time.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Wafer-Scale Patterning Synthesis of Two-Dimensional WSe2 Layers by Direct Selenization for Highly Sensitive van der Waals Heterojunction Broadband Photodetectors

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit promising potential in fabricating highly sensitive photodetectors due to their unique electrical and optoelectrical characteristics. However, micron-sized 2D materials produced by conventional chemical vapor deposition (CVD) and mechanical exfoliation methods fail to satisfy the demands for applications in integrated optoelectronics and systems given their poor controllability and repeatability. Here, we propose a simple selenization approach to grow wafer-scale (2 in.) 2D p-WSe₂ layers with high uniformity and customized patterns. Furthermore, a self-driven broadband photodetector with a p-WSe₂/n-Si van der Waals heterojunction has been in situ fabricated with a satisfactory responsivity of 689.8 mA/W and a large specific detectivity of 1.59 × 10¹³ Jones covering from ultraviolet to short-wave infrared. In addition, a remarkable nanosecond response speed has been recorded under 0.5% duty cycle of the input light. The proposed selenization approach on the growth of 2D WSe₂ layers demonstrates an effective route to fabricate highly sensitive broadband photodetectors used for integrated optoelectronic systems.

High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Emerging two-dimensional narrow band gap materials with tunable band gaps and unique electrical and optical properties have shown tremendous potential in broadband photodetection. Nevertheless, large dark currents severely hinder the performance of photodetectors. Here, a MoS₂/Ta₂NiSe₅ van der Waals heterostructure device was successfully fabricated with a high rectification ratio of ∼10⁴ and an ultralow reverse bias current of the pA level. Excitingly, the charge transfer and the generation of the built-in electric field of heterostructures have been proved by theory and experiment, which effectively suppress dark currents. The dark current of the heterostructure reduces by nearly 10⁴ compared with the pure Ta₂NiSe₅ photodetector at V_ds = 1 V. The MoS₂/Ta₂NiSe₅ device exhibits excellent photoelectric performance with the maximum responsivity of 515.6 A W^-1 and 0.7 A W^-1 at the wavelengths of 532 and 1064 nm under forward bias, respectively. In addition, the specific detectivity is up to 3.1 × 10¹³ Jones (532 nm) and 2.4 × 10⁹ Jones (1064 nm). Significantly, the device presents an ultra-high gain of 6 × 10⁷ and an exceptional external quantum efficiency of 1.2 × 10⁵% under 532 nm laser irradiation. The results reveal that the MoS₂/Ta₂NiSe₅ heterostructure provides an essential platform for the development and application of high-performance broadband optoelectronic devices.

Pressure-Tailored Self-Driven and Broadband Photoresponse in PbI2

Photoelectric devices based on the photothermoelectric (PTE) effect show promising prospects for broadband detection without an external power supply. However, effective strategies are still required to regulate the conversion efficiency of light to heat and electricity. Herein, significantly enhanced photoresponse properties of PbI₂ generated from a PTE mechanism via a high-pressure strategy are reported. PbI₂ exhibits a stable, fast, self-driven, and broadband photoresponse at ≈980 nm. Intriguingly, the synergy of the photoconductivity and PTE mechanism is conducive to enhancing the photoelectric properties, and extending the detection bandwidth to the optical communication waveband (1650 nm) with an external bias. The dramatically enhanced photoresponse characteristics are attributed to narrowing of the band gap and a significantly decreased resistance, which originate from the enhancement of atomic orbital overlap owing to pressure-induced Pb-I bond contraction. These findings open up a new avenue toward designing self-driven and broadband photoelectric devices.

Photodetection and Infrared Imaging Based on Cd3As2 Epitaxial Vertical Heterostructures

Due to the nontrivial electronic structure, Cd₃As₂ is predicted to possess various transport properties and outstanding photoresponses. Photodetectors based on topological materials are mostly made up of nanoplates, yet monolithic in situ heteroepitaxial Cd₃As₂ photodetectors are rarely reported to date owing to the crystal mismatch between Cd₃As₂ and semiconductors. Here, we demonstrate Cd₃As₂/Zn_xCd_1-xTe/GaSb vertical heteroepitaxial photodetectors via molecule beam epitaxy. By constructing dual-Schottky junctions, these photodetectors show high responsivity and external quantum efficiency in a broadband spectrum. Based on the strong and fast photoresponse, we achieved visible light to near-infrared imaging using a one-pixel imaging system with a galvo. Our results illustrate that the integration of three-dimensional Dirac semimetal Cd₃As₂ with semiconductors has potential applications in broadband photodetection and infrared cameras.

Optical Duality of Molybdenum Disulfide: Metal and Semiconductor

The two different light-matter interactions between visible and infrared light are not switchable because control mechanisms have not been elucidated so far, which restricts the effective spectral range in light-sensing devices. In this study, modulation of the effective spectral range is demonstrated using the metal-insulator transition of MoS₂. Nondegenerate MoS₂ exhibits a photoconductive effect in detecting visible light. In contrast, degenerate MoS₂ responds only to mid-infrared (not visible) light by displaying a photoinduced heating effect via free carrier absorption. Depending on the doping level, the optical behavior of MoS₂ simulates the photoconductivity of either the semiconductor or the metal, further indicating that the optical metal-insulator transition is coherent with its electrical counterpart. The electrical switchability of MoS₂ enables the development of an unprecedented and novel design optical sensor that can detect both visible and mid-IR (wavelength of 9.6 μm) ranges with a singular optoelectronic device.

Influence of metal-semiconductor junction on the performances of mixed-dimensional MoS2/Ge heterostructure avalanche photodetector

The two-dimensional/three-dimensional van der Waals heterostructures provide novel optoelectronic properties for the next-generation of information devices. Herein, MoS₂/Ge heterojunction avalanche photodetectors are readily obtained. The device with an Ag electrode at MoS₂ side exhibits more stable rectification characteristics than that with an Au electrode. The rectification radio greater than 10³ and a significant avalanche breakdown are observed in the device. The responsivity of 170 and 4 A/W and the maximum gain of 320 and 13 are obtained under 532 and 1550 nm illumination, respectively. Such photoelectric properties are attributed to the carrier multiplication at a Ge/MoS₂ junction due to an avalanche breakdown. The mechanism is confirmed by the Sentaurus TCAD-simulated I-V characteristics.

Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe2 and Graphene Vertical vdWs Heterostructure

Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption in the range of visible to infrared wavelength. High-performance photodetectors are expected to achieve through the combination of graphene and TMDCs. Nowadays, near-infrared (NIR) photodetectors play significant roles in many areas. MoTe2 with bandgap energy of about 1.0 eV in its bulk form is a promising material for cost-saving NIR photodetectors. Thus far, only a few of the reported studies on NIR photodetectors built on MoTe2/graphene heterostructures have achieved high responsivity and short response time simultaneously in one device. In this study, we fabricate graphene–MoTe2–graphene vertical van der Waals heterostructure devices through chemical vapor deposition (CVD) growth, wet transfer method, and dry etching technique. Under 1064 nm laser illumination, we acquire responsivity of as high as 635 A/W and a response time of as short as 19 μs from the as-fabricated device. Moreover, we acquire higher responsivity of 1752 A/W and a shorter response time of 16 μs from the Al2O3-encapsulated device. Our research drives the application of 2D materials in the NIR wavelength range.

High-Performance Photodetectors Based on MoTe2-MoS2 van der Waals Heterostructures

Two-dimensional (2D) materials have got extensive attention for multifunctional device applications in advanced nanoelectronics and optoelectronics, such as field-effect transistors, photodiodes, and solar cells. In our work, we fabricated MoTe₂-MoS₂ van der Waals heterostructure photodetectors with great performance using the mechanical exfoliation method and restack technique. It is demonstrated that our MoTe₂-MoS₂ heterostructure photodetector device can operate without bias voltage, possessing a low dark current (10 pA) and high photocurrent on/off ratio (>10⁴). Importantly, the room temperature photoresponsivity of the MoTe₂-MoS₂ photodetector can reach 110.6 and 9.2 mA W^-1 under λ = 532 and 1064 nm incident laser powers, respectively. Our results indicate that the van der Waals heterostructure based on 2D semiconducting materials is expected to play an important role in nanoscale optoelectronic applications.

Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe₂) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe₂-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe₂ for PDs far into the IR wavelength range. Our PtSe₂ PDs integrated by direct growth outperform PtSe₂ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe₂ an attractive 2D material for optoelectronics and PICs.

Low-Dimensional Layered Light-Sensitive Memristive Structures for Energy-Efficient Machine Vision

Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.

2D Bi2Se3 materials for optoelectronics

2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator

Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO₂ nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.

A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect

Broadband photodetection is of vital importance for both civil and technological applications. The widespread use of commercial photodiodes based on traditional semiconductors (e.g. GaN, Si, and InGaAs) is limited to the relatively narrow response range. In this work, we have demonstrated a self-driven and broadband photodetector based on WS₂/pyramid Si 2D/3D mixed-dimensional van der Waals (vdW) heterojunction, which is assembled by directly transferring 2D WS₂ film on 3D pyramid Si. Thanks to the enhanced light absorption with the pyramid Si structure, the defect-induced narrowed bandgap of the WS₂ film, and high-quality vdW heterojunction, impressive device performances in terms of a large responsivity of 290 mA W^-1, a high specific detectivity of up to 2.6 × 10¹⁴ Jones and an ultrabroad response spectrum ranging from 265 nm to 3.0 μm are achieved at zero bias. Importantly, the photodetector can function as an infrared imaging cell with a high spatial resolution. The totality of these excellent features confirms that the demonstrated WS₂/pyramid Si 2D/3D mixed-dimensional vdW heterojunction device may hold great promise for applications in high-performance broadband infrared photodetection and imaging.

Photodiode behaviors of the AgSbS2nanocrystals in a Schottky structure

Cubic phase AgSbS₂nanocrystals (NCs) were synthesized by the hot-injection method, and they were inserted between the Al andp-Si to fabricate Al/AgSbS₂/p-Si photodiode by the thermal evaporation method. AgSbS₂NCs were characterized by XRD, SEM and TEM instruments to confirm the crystal phase, surface morphology as well as crystalline size. The XRD pattern revealed that the cubic crystalline structure of the AgSbS₂. The spherical shapes and well surface morphology were affirmed by SEM and TEM analysis. Al/AgSbS₂/p-Si photodiode was characterized byI-Vmeasurements depending on the light power intensity and byC-Vmeasurement for various frequencies.I-Vcharacteristics revealed that the Al/AgSbS₂/p-Si exhibited good photodiode behavior and a high rectifying ratio. Various diode and detector parameters were extracted fromI-Vmeasurements, and they were discussed in detail. TheC-Vcharacteristics highlighted that the Al/AgSbS₂/p-Si photodiode showed voltage and frequency dependent profile at the accumulation region. The fabricated Al/AgSbS₂/p-Si photodiode can be thought for optoelectronic applications.

Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS₂), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS₂ and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS₂/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS₂ induced by the vacancy defects, the effective surface modification with an ultrathin AlO_x layer, and the well-designed vertical n-n heterojunction structure, the WS₂/AlO_x/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 10¹¹ Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS₂-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.

Long-Wave Infrared Photodetectors Based on 2D Platinum Diselenide atop Optical Cavity Substrates

Long-wave infrared (LWIR) photodetection is of high technological importance, having a wide range of applications that include thermal imaging and spectroscopy. Two-dimensional (2D) noble-transition-metal dichalcogenides, platinum diselenide (PtSe₂) in particular, have recently shown great promise for infrared detection. However, previous studies have mainly focused on wavelengths up to the short-wave infrared region. In this work, we demonstrate LWIR photodetectors based on multilayer PtSe₂. In addition, we present an optical cavity substrate that enhances the light-matter interaction in 2D materials and thus their photodetection performance in the LWIR spectral region. The PtSe₂ photoconductors fabricated on the TiO₂/Au optical cavity substrate exhibit responsivities up to 54 mA/W to LWIR illumination at a wavelength of 8.35 μm. Moreover, these devices show a fast photoresponse with a time constant of 54 ns to white light illumination. The findings of this study reveal the potential of multilayer PtSe₂ for fast and broadband photodetection from visible to LWIR wavelengths.

Scalable Van der Waals Two-Dimensional PtTe2 Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection

In recent years, there has been increasing interest in leveraging two-dimensional (2D) van der Waals (vdW) crystals for infrared (IR) photodetection, exploiting their unusual optoelectrical properties. Some 2D vdW materials with small band gap energies such as graphene and black phosphorus have been explored as stand-alone IR responsive layers in photodetectors. However, the devices incorporating these IR-sensitive 2D layers often exhibited poor performances owing to their preparation issues such as limited scalability and air instability. Herein, we explored wafer-scale 2D platinum ditelluride (PtTe₂) layers for near-to-mid IR photodetection by directly growing them onto silicon (Si) wafers. 2D PtTe₂/Si heterojunctions exhibited wavelength- and intensity-dependent high photocurrents in a spectral range of ∼1-7 μm, significantly outperforming stand-alone 2D PtTe₂ layers. The observed superiority is attributed to their excellent Schottky junction characteristics accompanying suppressed carrier recombination as well as optical absorbance competition between 2D PtTe₂ layers and Si. The direct and scalable growth of 2D PtTe₂ layers was further extended to demonstrate mechanically flexible IR photodetectors.

Recent Advances in 2D Group VB Transition Metal Chalcogenides

2D materials have received considerable research interest owing to their abundant material systems and remarkable properties. Among them, 2D group VB transition metal chalcogenides (GVTMCs) stand out as emerging 2D metallic materials and significantly broaden the research scope of 2D materials. 2D GVTMCs have great advantages in electrical transport, 2D magnetism, charge density wave, sensing, catalysis, and charge storage, making them attractive in the fields of functional devices and energy chemistry. In this review, the recent progress of 2D GVTMCs is summarized systematically from fundamental properties, growth methodologies to potential applications. The challenges and prospects are also discussed for future research in this field.

2D Homojunctions for Electronics and Optoelectronics

In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

Self-powered, ultra-high detectivity and high-speed near-infrared photodetectors from stacked-layered MoSe2/Si heterojunction

Photodetectors based on high-performance, two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) are limited by the synthesis of larger-area 2D TMDCs with high quality and optimized device structure. Herein, we report, for the first time, a uniform and stacked-layered MoSe₂ film of high quality was deposited onto Si substrate by using the pulsed laser deposition technique, and then in situ constructed layered MoSe₂/Si 2D-3D vertical heterojunction. The resultant heterojunction showed a wide near-infrared response up to 1550 nm, with both ultra-high detectivity up to 1.4 × 10¹⁴ Jones and a response speed approaching 120 ns at zero bias, which are much better than most previous 2D TMDC-based photodetectors and are comparable to that of commercial Si photodiodes. The high performance of the layered MoSe₂/Si heterojunction can be attributed to be the high-quality stacked-layered MoSe₂ film, the excellent rectifying behavior of the device and the n-n heterojunction structure. Moreover, the defect-enhanced near-infrared response was determined to be Se vacancies from the density functional theory (DFT) simulations. These results suggest great potential of the layered MoSe₂/Si 2D-3D heterojunctions in the field of communication light detection. More importantly, the in situ grown heterojunctions are expected to boost the development of other 2D TMDCs heterojunction-based optoelectronic devices.

Fast and Low-Cost Synthesis of MoS2 Nanostructures on Paper Substrates for Near-Infrared Photodetectors

Recent advances in the production and development of two-dimensional transition metal dichalcogenides (2D TMDs) allow applications of these materials, with a structure similar to that of graphene, in a series of devices as promising technologies for optoelectronic applications. In this work, molybdenum disulfide (MoS2) nanostructures were grown directly on paper substrates through a microwave-assisted hydrothermal synthesis. The synthesized samples were subjected to morphological, structural, and optical analysis, using techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman. The variation of synthesis parameters, as temperature and synthesis time, allowed the manipulation of these nanostructures during the growth process, with alteration of the metallic (1T) and semiconductor (2H) phases. By using this synthesis method, two-dimensional MoS2 nanostructures were directly grown on paper substrates. The MoS2 nanostructures were used as the active layer, to produce low-cost near-infrared photodetectors. The set of results indicates that the interdigital MoS2 photodetector with the best characteristics (responsivity of 290 mA/W, detectivity of 1.8 × 109 Jones and external quantum efficiency of 37%) was obtained using photoactive MoS2 nanosheets synthesized at 200 °C for 120 min.

Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection

The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 10⁴ A W^-1 ) and detectivity (D* = 6.83 × 10¹⁴ Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τ_R  = 3.97 s, τ_D  = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.

Ultrathin Bi2O2S nanosheet near-infrared photodetectors

Recently, a zipper two-dimensional (2D) material Bi₂O₂Se belonging to the layered bismuth oxychalcogenide (Bi₂O₂X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D materials for high-performance electronic and optoelectronic applications. This hints towards exploring the other members of the Bi₂O₂X family for their true potential and bismuth oxysulfide (Bi₂O₂S) could be the next member for such applications. Here, we demonstrate for the first time, the scalable room-temperature chemical synthesis and near-infrared (NIR) photodetection of ultrathin Bi₂O₂S nanosheets. The thickness of the freestanding nanosheets was around 2-3 nm with a lateral dimension of ∼80-100 nm. A solution-processed NIR photodetector was fabricated from ultrathin Bi₂O₂S nanosheets. The photodetector showed high performance, under 785 nm laser illumination, with a photoresponsivity of 4 A W^-1, an external quantum efficiency of 630%, and a normalized photocurrent-to-dark-current ratio of 1.3 × 10¹⁰ per watt with a fast response time of 100 ms. Taken together, the findings suggest that Bi₂O₂S nanosheets could be a promising alternative 2D material for next-generation large-area flexible electronic and optoelectronic devices.

Fabrication of Chalcogenide Glass Based Hexagonal Gapless Microlens Arrays via Combining Femtosecond Laser Assist Chemical Etching and Precision Glass Molding Processes

Chalcogenide glasses (ChGs) are emerging as critical infrared (IR)-enabled materials in advanced IR optical systems by the wealth of their transparency in the key wide infrared (IR) transmission window. However, fabrication of ChG-based integrated micro-optical components in an efficient and economical way remains a huge challenge. In this paper, a 3D close-packed hexagonal microlens array (MLA) possessing over 6000 convex hexagonal micro-lenslets with the size of tens of micrometers within a footprint of 10 mm × 10 mm on a Ge₂₀Sb₁₅Se₆₅ ChG surface was successfully fabricated via a precise thermal-mechanical molding process. The master mold of ChG MLA was firstly fabricated by a femtosecond laser-assisted chemical etching process and then transferred on to the surface of the ChG via a precision thermo-mechanical molding process, which resulted in a convex MLA. The morphology, imaging and focusing performances of the as-prepared ChG MLA were investigated and demonstrated the advancement of the method. Meanwhile, the IR transmittance and x-ray diffraction image of the ChG MLAs were measured to verify the structural and compositional stability of the ChG under the given molding conditions. The combined results proved a new route to mass production of miniaturized gapless ChG MLAs for advanced infrared micro-optics.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.