Ultrafast Carrier Dynamics of the Exciton and Trion in MoS2 Monolayers Followed by Dissociation Dynamics in Au@MoS2 2D Heterointerfaces

Ultrafast Formation of Charge Transfer Trions at Molecular-Functionalized 2D MoS2 Interfaces

In this work, we investigate trion dynamics occurring at the heterojunction between organometallic molecules and a monolayer transition metal dichalcogenide (TMD) with transient electronic sum frequency generation (tr-ESFG) spectroscopy. By pumping at 2.4 eV with laser pulses, we have observed an ultrafast hole transfer, succeeded by the emergence of charge-transfer trions. This observation is facilitated by the cancellation of ground state bleach and stimulated emission signals due to their opposite phases, making tr-ESFG especially sensitive to the trion formation dynamics. The presence of charge-transfer trion at molecular functionalized TMD monolayers suggests the potential for engineering the local electronic structures and dynamics of specific locations on TMDs and offers a potential for transferring unique electronic attributes of TMD to the molecular layers.

Temperature dependent charge carrier dynamics in 2D ternary Cu2MoS4 nanoflakes: An effect of electron-phonon coupling

Two-dimensional transition metal chalcogenides (2D TMCs) like MoS2, WS2 etc., have established significant dominance in the field of nanoscience and nanotechnology, owing to their unique properties like strong light-matter interaction, high carrier mobility, large photo-responsivity etc. Despite the widespread utilization of these binary TMCs, their potential in the advancement of the optoelectronic research is limited due to the constraints in band tuning and charge carrier lifetime. To overcome these limitations, ternary transition metal chalcogenides have emerged as promising alternatives. Although, the optical properties of these materials have never been explored properly. Herein, we have investigated one such promising member of this group, Cu2MoS4 (CMS) using both steady state and time-resolved spectroscopic techniques. The material exhibits a broad range of visible light absorption, peaking at 576 nm. Photoluminescence spectroscopy confirmed the presence of both band gap emission and trap state-mediated emissions. Transient absorption spectroscopy unraveled the excited state charge carrier dynamics of CMS in sub-ps timescale, upon irradiation of visible light. We found significant influence of the trap mediated recombination, while Auger process being dominant at high charge density. We extended our study in a wide temperature range (5-300 K), which reveals the impact of electron-phonon coupling strength on the band gap and charge carrier dynamics of this material. This detailed study would draw more attention toward the unexplored optical properties of ternary 2D chalcogenides and will open new avenues for the construction of 2D material-based optical devices.

Ultrafast Hole Migration at the p-n Heterojunction of One-Dimensional SnS Nanorods and Zero-Dimensional CdS Quantum Dots

The p-n heterojunctions fabricated from one-dimensional (1D) p-type tin sulfide nanorods (SnS NRs) decorated with n-type zero-dimensional (0D) cadmium sulfide quantum dots (CdS QDs) have gained significant research attention in energy storage devices. Herein, we have successfully synthesized a 1D/0D SnS@CdS heterostructure (HS) using a hot injection method. Structural and morphological studies clearly suggest that CdS QDs are uniformly anchored on the surface of SnS NRs, resulting in intimate contact between two components. The photoluminescence (PL) study revealed the transfer of photoexcited holes from CdS QDs to SnS NRs, which was further confirmed by transient absorption (TA) studies. TA measurements demonstrate the hole transfer from the valence band of CdS QDs to SnS NRs and delocalization of electrons between the conduction band of SnS NRs and CdS QDs in SnS@CdS HS, resulting in efficient charge separation across the p-n heterojunction. These findings will open up a new paradigm for improving the efficiency of optoelectronic devices.

Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS₂. The strain and interface engineering of MoS₂/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS₂ on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS₂, the relative numerical changes of physical parameters of MoS₂ films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.

Efficient Hot Electron Transfer and Extended Separation of Charge Carriers at the 1P Hot State in Sb2Se3/CdSe p-n Heterojunction

Utilization of hot carriers is very crucial in improving the efficiency of solar energy devices. In this work, we have fabricated an Sb₂Se₃/CdSe p-n heterojunction via a cation exchange method and investigated the possibility of hot electron transfer and relaxation pathways through ultrafast spectroscopy. The enhanced intensity of the CdSe hot excitonic (1P) bleach in the heterostructure system confirmed the hot electron transfer from Sb₂Se₃ to CdSe. Both the 1S and 1P signals are dynamically very slow in the heterosystem, validating this charge migration phenomenon. Interestingly, recovery of the 1P signal is much slower than that of 1S. This is very unusual as 1S is the lowest-energy state. This observation indicates the strength of hot electron transfer in this unique heterojunction, which helps in increasing the carrier lifetime in the hot state. Extended separation of charge carriers and enhanced hot carrier lifetime would be extremely helpful in extracting carriers and boost the performance of optoelectronic devices.

NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS2 Crystals Using Confined-Space CVD

Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS₂) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS₂ remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS₂ in a controlled manner. Herein, we report the large-scale growth of MoS₂ with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS₂ are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS₂ are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS₂ show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS₂ and opens the way for its various optoelectronic and electronic applications.

Understanding the linear and nonlinear optical responses of few-layer exfoliated MoS2and WS2nanoflakes: experimental and simulation studies

Understanding the linear and nonlinear optical (NLO) responses of two-dimensional nanomaterials is essential to effectively utilize them in various optoelectronic applications. Here, few-layer MoS₂and WS₂nanoflakes with lateral size less than 200 nm were prepared by liquid-phase exfoliation, and their linear and NLO responses were studied simultaneously using experimental measurements and theoretical simulations. Finite-difference time-domain (FDTD) simulations confirmed the redshift in the excitonic transitions when the thickness was increased above 10 nm indicating the layer-number dependent bandgap of nanoflakes. WS₂nanoflakes exhibited around 5 times higher absorption to scattering cross-section ratio than MoS₂nanoflakes at various wavelengths. Open aperture Z scan analysis of both the MoS₂and WS₂nanoflakes using 532 nm nanosecond laser pulses reveals strong nonlinear absorption activity with effective nonlinear absorption coefficient (β_eff) of 120 cm GW^-1and 180 cm GW^-1, respectively, which was attributed to the combined contributions of ground, singlet excited and triplet excited state absorption. FDTD simulation results also showed the signature of strong absorption density of few layer nanoflakes which may be account for their excellent NLO characteristics. Optical limiting threshold values of MoS₂and WS₂nanoflakes were obtained as ∼1.96 J cm^-2and 0.88 J cm^-2, respectively, which are better than many of the reported values. Intensity dependent switching from saturable absorption (SA) to reverse SA was also observed for MoS₂nanoflakes when the laser intensity increased from 0.14 to 0.27 GW cm^-2. The present study provides valuable information to improve the selection of two-dimensional nanomaterials for the design of highly efficient linear and nonlinear optoelectronic devices.

Exciton Transfer at Heterointerfaces of MoS2 Monolayers and Fluorescent Molecular Aggregates

Integration of distinct materials to form heterostructures enables the proposal of new functional devices based on emergent physical phenomena beyond the properties of the constituent materials. The optical responses and electrical transport characteristics of heterostructures depend on the charge and exciton transfer (CT and ET) at the interfaces, determined by the interfacial energy level alignment. In this work, heterostructures consisting of aggregates of fluorescent molecules (DY1) and 2D semiconductor MoS₂ monolayers are fabricated. Photoluminescence spectra of DY1/MoS₂ show quenching of the DY1 emission and enhancement of the MoS₂ emission, indicating a strong electronic interaction between these two materials. Nanoscopic mappings of the light-induced contact potential difference changes rule out the CT process at the interface. Using femtosecond transient absorption spectroscopy, the rapid interfacial ET process from DY1 aggregates to MoS₂ and a fourfold extension of the exciton lifetime in MoS₂ are elucidated. These results suggest that the integration of 2D inorganic semiconductors with fluorescent molecules can provide versatile approaches to engineer the physical characteristics of materials for both fundamental studies and novel optoelectronic device applications.

Electron Doping of Semiconducting MoS2 Nanosheets by Silver or Gold Nanoclusters

Semiconducting two-dimensional (2D) materials have potential applications as ultrathin optoelectronic materials. Therefore, being able to precisely modulate the band gap is useful to improving their applicability. Electron doping of the semiconducting materials is one of the successful techniques used to modulate their band gap. Silver nanoclusters (AgNCs) or gold nanoclusters (AuNCs) a few nanometers in size can generate a high density of highly energetic hot electrons with relatively long lifetimes when photoexcited. The optical band gap of 2D MoS₂ nanosheets shows different responses when integrated with different amounts of AgNCs or AuNCs due to the electron doping effect. Introducing a small amount of the nanoclusters to the surface of a MoS₂ nanosheet lowered its optical band gap. Further reduction of the optical band gap of MoS₂ is obtained upon tripling the amount of integrated nanoclusters. Conversely, the optical band gap of MoS₂ was increased when integrated with 5 times the concentration of AuNCs and AgNCs. The optical band gap of the MoS₂ nanosheets was significantly increased when integrated with an even higher concentration of AuNCs or AgNCs. The magnitude of the shift of the optical band gap of MoS₂ induced by AgNCs is higher than that induced by AuNCs because the energy of LUMO of the AgNCs is higher than that of the AuNCs.

Spontaneous formation of gold nanoparticles on MoS2 nanosheets and its impact on solution-processed optoelectronic devices

Understanding size-dependent properties of 2D materials is crucial for their optimized performance when incorporated through solution routes. In this work, the chemical nature of MoS₂ as a function of nanosheet size is investigated through the spontaneous reduction of chloroauric acid. Microscopy studies suggest higher gold nanoparticle decoration density in smaller nanosheet sizes, resulting from higher extent of reduction. Further corroboration through surface-enhanced Raman scattering using the gold-decorated MoS₂ nanosheets as substrates exhibited an enhancement factor of 1.55 × 10⁶ for smaller nanosheets which is 7-fold higher as compared to larger nanosheets. These plasmonic-semiconductor hybrids are utilized for photodetection, where decoration is found to impact the photoresponse of smaller nanosheets the most, and is optimized to achieve responsivity of 367.5 mAW^-1 and response times of ∼17 ms. The simplistic modification via solution routes and its impact on optoelectronic properties provides an enabling platform for 2D materials-based applications.

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Reducing agent-free Au nanoparticle decoration on aqueously dispersed 2H-MoS₂.

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Control on Au nanoparticle decoration density through nanosheet size-selection.

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SERS as a probe for determining the decoration density along with microscopy.

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Enhanced photodetection by spontaneous modification with Au on MoS₂ films.

Using Exciton/Trion Dynamics to Spatially Monitor the Catalytic Activities of MoS2 during the Hydrogen Evolution Reaction

The adsorption and desorption of electrolyte ions strongly modulates the carrier density or carrier type on the surface of monolayer-MoS₂ catalyst during the hydrogen evolution reaction (HER). The buildup of electrolyte ions onto the surface of monolayer MoS₂ during the HER may also result in the formation of excitons and trions, similar to those observed in gate-controlled field-effect transistor devices. Using the distinct carrier relaxation dynamics of excitons and trions of monolayer MoS₂ as sensitive descriptors, an in situ microcell-based scanning time-resolved liquid cell microscope is set up to simultaneously measure the bias-dependent exciton/trion dynamics and spatially map the catalytic activity of monolayer MoS₂ during the HER. This operando probing technique used to monitor the interplay between exciton/trion dynamics and electrocatalytic activity for two-dimensional transition metal dichalcogenides provides an excellent platform to investigate the local carrier behaviors at the atomic layer/liquid electrolyte interfaces during electrocatalytic reaction.

Excitons and Trions in MoS2 Quantum Dots: The Influence of the Dispersing Medium

Single-layer MoS₂ has been reported to exhibit strong excitonic and trionic signatures in its photoluminescence (PL) spectra. Here, we report that the emission spectra of MoS₂ QDs strongly depend on the dielectric constant of the solvent and the relative difference in the electronegativity between the solvent and QDs. Due to the difference in electronegativity, electrons are either added to the QD or withdrawn from it. Consequently, depending upon the dielectric permittivity and the electronegativity of the surrounding medium, the signature peaks of excitons and trions exhibit a significant change in the PL spectra of MoS₂ QDs. Our findings are helpful to understand the effect of the surrounding environment on the optical properties of QDs and the importance of the selection of solvent since MoS₂ QDs are potential candidates for valleytronics applications.

Probing ultrafast hot charge carrier migration in MoS2 embedded CdS nanorods

Efficient utilization of hot charge carriers is of utmost benefit for a semiconductor-based optoelectronic device. Herein, a one-dimensional (1D)/two-dimensional (2D) heterojunction was fabricated in the form of CdS/MoS₂ nanorod/nanosheet composite and migration of hot charge carriers was being investigated with the help of transient absorption (TA) spectroscopy. The band alignment was such that both the electrons and holes in the CdS region tend to migrate into the MoS₂ region following photoexcitation. The composite system is composed of optical signatures of both CdS and MoS₂, with the dominance of CdS nanorods. In addition, the TA signal of MoS₂ is substantially enhanced in the heterosystem at the cost of the diminished CdS signal, confirming the migration of charge carrier population from CdS to MoS₂. This migration phenomenon was dominated by the hot carrier transfer. The hot carriers in the high energy states of CdS are preferentially migrated into the MoS₂ states rather than being cooled to the band edge. The hot carrier transfer time for a 400 nm pump excitation was calculated to be 0.21 ps. This is much faster than the band edge electron transfer process, occurring at 2.0 ps time scale. We found that these migration processes are very much dependent on the applied pump photon energy. Higher energy pump photons are more efficient in the hot carrier transfer process and place these hot carriers in the higher energy states of MoS₂, further extending charge carrier separation. This detailed spectroscopic investigation would help in the fabrication of better 1D/2D heterojunctions and advance the optoelectronic field.

Interfacing g-C3N4 Nanosheets with CdS Nanorods for Enhanced Photocatalytic Hydrogen Evolution: An Ultrafast Investigation

Effective separation of electron-hole and utilization of hot charge carriers are known to be the most important factors influencing the activity of a good photocatalyst. Herein, we developed a 1D/2D heterojunction in the composite of CdS nanorod and g-C₃N₄ (CN) nanosheets. These two form a quasi-type-II junction at the heterointerface. The photoexcited electrons are supposed to be transferred from CN to CdS, as observed from the enhanced photoluminescence of CdS. Transient studies revealed an absolute dominance of CdS exciton formation even in the composite system, although the dynamics were substantially modified in the presence of CN. The rise time of CdS band edge excitons were increased in the composite material, owing to the migration of hot electrons from CN to CdS. The hot electron transfer time was found to be ∼0.5 ps (rate constant ∼1.98 ps^-1). The excitons decay in a much slower manner than that of the pristine CdS, confirming enhanced electron population in CdS. This migration of charge carriers was found to be immensely dependent on the applied excitation photon energy. Efficient migration of charge carriers leads to enhanced photocatalytic activity in the composite and an increased evolution of H₂ evolution rate was witnessed. This detailed spectroscopic study toward the mechanistic pathway of the catalytic activity of an 1D/2D heterocomposite would be immensely helpful in fabricating many other effective heterojunctions which will advance the catalysis research.

Atomically Thin 2D Photocatalysts for Boosted H2 Production from the perspective of Transient Absorption Spectroscopy

Excited state photophysical processes play the most important role in deciding the efficiency of any photonic applications like solar light driven H2 evolution, which is considered to be the next...

Ultrafast Hot Electron Transfer and Trap-State Mediated Charge Carrier Separation toward Enhanced Photocatalytic Activity in g-C3N4/ZnIn2S4 Heterostructure

Comprehensive understanding of charge carrier dynamics in the heterostructure based photocatalytic materials will strengthen their candidature as future solar energy harvesting resources. Here, in this work, the g-C₃N₄(CN)/ZnIn₂S₄ (ZIS) heterostructure was successfully synthesized and a direct spectroscopic correlation was established between excited-state charge carrier dynamics and enhanced photocatalytic activity using ultrafast transient absorption (TA) spectroscopy. TA analysis demonstrated the dominance of hot electron transfer over the band edge one. The photogenerated hot electrons migrated from the high-energy excitonic states of CN toward ZIS in the subpicosecond time scale. Broad-band (UV to NIR) ultrafast transient pump-probe spectroscopy revealed the collective effect of hot electron transfer as well as trap-state mediated electron delocalization in the enhanced photocatalytic H₂ evolution. This work reveals the role of photogenerated carriers in the photocatalytic performance of the CN/ZIS heterostructure and would create a new avenue toward the advancement of CN based heterostructure in photocatalytic devices.

Enhanced Charge Carrier Separation and Improved Biexciton Yield at the p-n Junction of SnSe/CdSe Heterostructures: A Detailed Electrochemical and Ultrafast Spectroscopic Investigation

Tin chalcogenides (SnX, X = S, Se)-based heterostructures (HSs) are promising materials for the construction of low-cost optoelectronic devices. Here, we report the synthesis of a SnSe/CdSe HS using the controlled cation exchange reaction. The (400) plane of SnSe and the (111) plane of CdSe confirm the formation of an interface between SnSe and CdSe. The Type I band alignment is estimated for the SnSe/CdSe HS with a small conduction band offset (CBO) of 0.72 eV through cyclic voltammetry measurements. Transient absorption (TA) studies demonstrate a drastic enhancement of the CdSe biexciton signal that points toward the hot carrier transfer from SnSe to CdSe in a short time scale. The fast growth and recovery of CdSe bleach in the presence of SnSe indicate charge transfer back to SnSe. The observed delocalization of carriers in these two systems is crucial for an optoelectronic device. Our findings provide new insights into the fabrication of cost-effective photovoltaic devices based on SnSe-based heterostructures.

Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition

The use of metal nanoparticles is an established paradigm for the synthesis of semiconducting one-dimensional nanostructures. In this work we study their effect on the synthesis of two-dimensional semiconducting materials, by using gold nanoparticles for chemical vapor deposition growth of two-dimensional molybdenum disulfide (MoS₂). In comparison with the standard method, the employment of gold nanoparticles allows us to obtain large monolayer MoS₂ flakes, up to 20 μm in lateral size, even if they are affected by the localized overgrowth of MoS₂ bilayer and trilayer islands. Important modifications of the optical and electronic properties of MoS₂ triangular domains are reported, where the photoluminescence intensity of the A exciton is strongly quenched and a shift to a positive threshold voltage in back-gated field effect transistors is observed. These results indicate that the use of gold nanoparticles influences the flake growth and properties, indicating a method for possible localized synthesis of two-dimensional materials, improving the lateral size of monolayers and modifying their properties.

Ultrafast Insights into High Energy (C and D) Excitons in Few Layer WS2

High energy (C and D) excitons possess extraordinary influence over the optical properties of atomically thin transition metal dichalcogenides (TMDCs), and the comprehensive understanding of these would play a pivotal role in advancing research on 2D optoelectronics. Herein, we employed transient absorption spectroscopy to monitor the underlying photophysical processes involved with different excitonic features in few layer WS₂, modeled as a TMDC representative. We observed a strong intervalley coupling across the momentum space and proposed the most plausible relaxation pathway for different excitons in few layer scenario. C and D exciton dynamics were significantly slower as compared to canonical A and B excitons, as a consequence of the indirect Λ-Γ relaxation in C and D and direct K-K combination in A and B. Most importantly, all four excitons emerge in the system and influence each other irrespective of the incident photon energy, which would be extremely impactful in fabricating wide range photonic devices.

Ultrafast transient sub-bandgap absorption of monolayer MoS2

The light-matter interaction in materials is of remarkable interest for various photonic and optoelectronic applications, which is intrinsically determined by the bandgap of the materials involved. To extend the applications beyond the bandgap limit, it is of great significance to study the light-matter interaction below the material bandgap. Here, we report the ultrafast transient absorption of monolayer molybdenum disulfide in its sub-bandgap region from ~0.86 µm to 1.4 µm. Even though this spectral range is below the bandgap, we observe a significant absorbance enhancement up to ~4.2% in the monolayer molybdenum disulfide (comparable to its absorption within the bandgap region) due to pump-induced absorption by the excited carrier states. The different rise times of the transient absorption at different wavelengths indicate the various contributions of the different carrier states (i.e., real carrier states in the short-wavelength region of ~<1 µm, and exciton states in the long wavelength region of ~>1 µm). Our results elucidate the fundamental understanding regarding the optical properties, excited carrier states, and carrier dynamics in the technologically important near-infrared region, which potentially leads to various photonic and optoelectronic applications (e.g., excited-state-based photodetectors and modulators) of two-dimensional materials and their heterostructures beyond their intrinsic bandgap limitations.

Weak Distance Dependence of Hot-Electron-Transfer Rates at the Interface between Monolayer MoS2 and Gold

Electron transport across the transition-metal dichalcogenide (TMD)/metal interface plays an important role in determining the performance of TMD-based optoelectronic devices. However, the robustness of this process against structural heterogeneities remains unexplored, to the best of our knowledge. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and atomic force microscopy to investigate the spatially resolved hot-electron-transfer dynamics at the monolayer (1L) MoS₂/Au interface. A spatially heterogeneous distribution of 1L-MoS₂/Au gap distances, along with the sub-80 nm spatial- and sub-60 fs temporal resolution of TR-PEEM, permits the simultaneous measurement of electron-transfer rates across a range of 1L-MoS₂/Au distances. These decay exponentially as a function of distance, with an attenuation coefficient β ∼ 0.06 ± 0.01 Å^-1, comparable to molecular wires. Ab initio simulations suggest that surface plasmon-like states mediate hot-electron-transfer, hence accounting for its weak distance dependence. The weak distance dependence of the interfacial hot-electron-transfer rate indicates that this process is insensitive to distance fluctuations at the TMD/metal interface, thus motivating further exploration of optoelectronic devices based on hot carriers.

Robust B-exciton emission at room temperature in few-layers of MoS2:Ag nanoheterojunctions embedded into a glass matrix

Tailoring the photoluminescence (PL) properties in two-dimensional (2D) molybdenum disulfide (MoS2) crystals using external factors is critical for its use in valleytronic, nanophotonic and optoelectronic applications. Although significant effort has been devoted towards enhancing or manipulating the excitonic emission in MoS2 monolayers, the excitonic emission in few-layers MoS2 has been largely unexplored. Here, we put forward a novel nano-heterojunction system, prepared with a non-lithographic process, to enhance and control such emission. It is based on the incorporation of few-layers MoS2 into a plasmonic silver metaphosphate glass (AgPO3) matrix. It is shown that, apart from the enhancement of the emission of both A- and B-excitons, the B-excitonic emission dominates the PL intensity. In particular, we observe an almost six-fold enhancement of the B-exciton emission, compared to control MoS2 samples. This enhanced PL at room temperature is attributed to an enhanced exciton-plasmon coupling and it is supported by ultrafast time-resolved spectroscopy that reveals plasmon-enhanced electron transfer that takes place in Ag nanoparticles-MoS2 nanoheterojunctions. Our results provide a great avenue to tailor the emission properties of few-layers MoS2, which could find application in emerging valleytronic devices working with B excitons.

Second-harmonic imaging microscopy for time-resolved investigations of transition metal dichalcogenides

Two-dimensional transition metal dichalcogenides (TMD) have shown promise for various applications in optoelectronics and so-called valleytronics. Their operation and performance strongly depend on the stacking of individual layers. Here, optical second-harmonic generation in imaging mode is shown to be a versatile tool for systematic time-resolved investigations of TMD monolayers and heterostructures in consideration of the material's structure. Large sample areas can be probed without the need of any mapping or scanning. By means of polarization dependent measurements, the crystalline orientation of monolayers or the stacking angles of heterostructures can be evaluated for the whole field of view. Pump-probe experiments then allow to correlate observed transient changes of the second-harmonic response with the underlying structure. The corresponding time-resolution is virtually limited by the pulse duration of the used laser. As an example, polarization dependent and time-resolved measurements on mono- and multilayer MoS2flakes grown on a SiO2/ Si(001) substrate are presented.

Effect of Confinement on the Exciton and Biexciton Dynamics in Perovskite 2D-Nanosheets and 3D-Nanocrystals

The performance of the high-end optoelectronic devices is essentially influenced by the intrinsic relaxation mechanisms pursued by the hot carriers. Therefore, the key toward achieving progression in such fields lies in developing a complete understanding of the involved carrier cooling dynamics. In this work, an endeavor has been made to highlight the difference in the cooling mechanisms in 2D CsPbBr₃ nanosheets (NSs) and their 3D counterpart nanocrystals (NCs) with the aid of femtosecond broad-band pump-probe spectroscopy, varying the excitation energies. The exciton and biexciton dynamics in both systems are found to be retarded upon increasing the excitation energy. However, in contrast to 3D NCs, carrier cooling is found to be faster in the 2D system, regardless of the excitation energy used, attributing this to less efficient charge screening by Fröhlich interaction in low-dielectric medium. A similar trend is replicated in the biexciton formation rate since the formation is also found to be faster in NSs compared to NCs.