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Zhang X, Yi R, Zhao B, Li C, Li L, Li Z, Zhang F, Wang N, Zhang M, Fang L, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C, Gan X. Vertical Emitting Nanowire Vector Beam Lasers. ACS NANO 2023. [PMID: 37191338 DOI: 10.1021/acsnano.3c02786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Due to the peculiar structured light field with spatially variant polarizations on the same wavefront, vector beams (VBs) have sparked research enthusiasm in developing advanced super-resolution imaging and optical communications techniques. A compact VB nanolaser is intriguing for VB applications in miniaturized photonic integrated circuits. However, determined by the diffraction limit of light, it is a challenge to realize a VB nanolaser in the subwavelength scale because the VB lasing modes should have laterally structured distributions. Here, we demonstrate a VB nanolaser made from a 300 nm thick InGaAs/GaAs nanowire (NW). To select the high-order VB lasing mode, a standing NW as-grown from the selective-area-epitaxial (SAE) growth process is utilized, which has a bottom donut-shaped interface with the silicon oxide growth substrate. With this donut-shaped interface as one of the reflective mirrors of the nanolaser cavity, the VB lasing mode has the lowest threshold. Experimentally, a single-mode VB lasing mode with a donut-shaped amplitude and azimuthally cylindrical polarization distribution is obtained. Together with the high yield and uniformity of the SAE-grown NWs, our work provides a straightforward and scalable path toward cost-effective co-integration of VB nanolasers on potential photonic integrated circuits.
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Affiliation(s)
- Xutao Zhang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
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Yi R, Zhang X, Zhang F, Gu L, Zhang Q, Fang L, Zhao J, Fu L, Tan HH, Jagadish C, Gan X. Integrating a Nanowire Laser in an on-Chip Photonic Waveguide. NANO LETTERS 2022; 22:9920-9927. [PMID: 36516353 DOI: 10.1021/acs.nanolett.2c03364] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
We report a simple and facile integration strategy of a laser source in passive photonic integrated circuits (PICs) by deterministically embedding semiconductor nanowires (NWs) in waveguides. InP NWs laid on a SiN slab are buried by a polymer layer which also acts as an electron-beam resist. With electron-beam lithography, hybrid polymer-SiN waveguides are formed with precisely embedded NWs. The lasing behavior of the waveguide-embedded NWs is confirmed, and more importantly, the NW lasing mode couples into the hybrid waveguide and forms an in-plane guiding mode. Multiple waveguide-embedded NW lasers are further integrated in complex photonic structures to illustrate that the waveguiding mode supplied by the NW lasers could be manipulated for on-chip signal processing, including power splitting and wavelength-division multiplexing. This integration strategy of an on-chip laser is applicable to other PIC platforms, such as silicon and lithium niobate, and the top cladding layer could be changed by depositing SiN or SiO2, promising its CMOS compatibility.
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Affiliation(s)
- Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, People's Republic of China
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Central Territory 2600, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, People's Republic of China
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Woods JRC, Gorecki J, Bek R, Richardson SC, Daykin J, Hooper G, Branagan-Harris E, Tropper AC, Wilkinson JS, Jetter M, Michler P, Apostolopoulos V. Coherent waveguide laser arrays in semiconductor quantum well membranes. OPTICS EXPRESS 2022; 30:32174-32188. [PMID: 36242285 DOI: 10.1364/oe.457577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2022] [Accepted: 06/15/2022] [Indexed: 06/16/2023]
Abstract
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record lasing thresholds as low as 60 mW of pump power. We study the emission of single lasers and arrays of lasers in the sub-mm range. We are able to create waveguide laser arrays with modal widths of approximately 5 - 10 µm separated by 10 - 20 µm, using real and reciprocal space imaging we study their emission characteristics and find that they maintain their mutual coherence while operating on either single or multiple longitudinal modes per lasing cavity.
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Yi R, Zhang X, Li C, Zhao B, Wang J, Li Z, Gan X, Li L, Li Z, Zhang F, Fang L, Wang N, Chen P, Lu W, Fu L, Zhao J, Tan HH, Jagadish C. Self-frequency-conversion nanowire lasers. LIGHT, SCIENCE & APPLICATIONS 2022; 11:120. [PMID: 35487898 PMCID: PMC9054850 DOI: 10.1038/s41377-022-00807-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 04/17/2022] [Accepted: 04/18/2022] [Indexed: 05/28/2023]
Abstract
Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III-V semiconductor NW lasers can also be used for self-frequency conversion to extend their output wavelengths, as a result of their non-centrosymmetric crystal structure and strongly localized optical field in the NWs. From a GaAs/In0.16Ga0.84As core/shell NW lasing at 1016 nm, an extra visible laser output at 508 nm is obtained via the process of second-harmonic generation, as confirmed by the far-field polarization dependence measurements and numerical modeling. From another NW laser with a larger diameter which supports multiple fundamental lasing wavelengths, multiple self-frequency-conversion lasing modes are observed due to second-harmonic generation and sum-frequency generation. The demonstrated self-frequency conversion of NW lasers opens an avenue for extending the working wavelengths of nanoscale lasers, even to the deep ultraviolet and THz range.
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Affiliation(s)
- Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China.
| | - Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Bijun Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China.
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Liang Fang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083, Shanghai, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, 200083, Shanghai, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, 201210, Shanghai, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
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5
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Wong WW, Su Z, Wang N, Jagadish C, Tan HH. Epitaxially Grown InP Micro-Ring Lasers. NANO LETTERS 2021; 21:5681-5688. [PMID: 34143635 DOI: 10.1021/acs.nanolett.1c01411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In the near future, technological advances driven by the Fourth Industrial Revolution will boost the demand for integrated, power-efficient miniature lasers, which are important for optical data communications and advanced sensing applications. Although top-down fabricated III-V semiconductor micro-disk and micro-ring lasers have been shown to be efficient light sources, challenges such as etching-induced sidewall roughness and poor fabrication scalability have been limiting the potential for high-density on-chip integration. Here, we demonstrate InP micro-ring lasers fabricated with a highly scalable epitaxial growth technique. With an optimized cavity design, the optically pumped micro-ring lasers show efficient room-temperature lasing with a lasing threshold of around 50 μJ cm-2 per pulse. Remarkably, through comprehensive modeling of the micro-ring laser, we demonstrate lasing mode engineering experimentally by tuning the vertical ring height. Our work is a major step toward realizing the high-density monolithic integration of III-V miniature lasers on submicrometer-scale optoelectronic devices.
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Affiliation(s)
- Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhicheng Su
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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6
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Zhang X, Yi R, Gagrani N, Li Z, Zhang F, Gan X, Yao X, Yuan X, Wang N, Zhao J, Chen P, Lu W, Fu L, Tan HH, Jagadish C. Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. ACS NANO 2021; 15:9126-9133. [PMID: 33970600 DOI: 10.1021/acsnano.1c02425] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.
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Affiliation(s)
- Xutao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Nikita Gagrani
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Fanlu Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaoming Yuan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong District, Shanghai 201210, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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7
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Unexpected high efficient dye sensitized solar cell based NiWO4 decorated bio activated carbon nanosheets hybrid photoanodes by one-pot facile hydrothermal approach. INORG CHEM COMMUN 2020. [DOI: 10.1016/j.inoche.2020.108039] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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8
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Yang Y, Wang X, Wang C, Song Y, Zhang M, Xue Z, Wang S, Zhu Z, Liu G, Li P, Dong L, Mei Y, Chu PK, Hu W, Wang J, Di Z. Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector. NANO LETTERS 2020; 20:3872-3879. [PMID: 32293186 DOI: 10.1021/acs.nanolett.0c01039] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with an extended cutoff wavelength. However, the traditional GeSn/Ge heterostructure usually consists of defects like misfit dislocations due to the lattice mismatch issue. The defects with the large feature size of a photodetector fabricated on bulk GeSn/Ge heterostructures induce a considerable dark current. Here, we demonstrate a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects, and the feature dimension is naturally at the nanoscale. A photodetector with a low dark current can be built on a GeSn/Ge dual-NW, which exhibits an extended detection wavelength beyond 2 μm and enhanced responsivity compared to the Ge NW. Moreover, the dark current can be further suppressed by the depletion effect from the ferroelectric polymer side gate. Our work suggests the flexible GeSn/Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.
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Affiliation(s)
- Yuekun Yang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xudong Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Chen Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yuxin Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhongyunshen Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanyu Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Panlin Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Linxi Dong
- Key Laboratory of RF Circuits and System of Ministry of Education, College of Electronic and Information, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Yongfeng Mei
- Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science & Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Weida Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jianlu Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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9
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Zhang Z, Hossain ZM. Surface softening regulates size-dependent stiffness of diamond nanowires. NANOTECHNOLOGY 2020; 31:095709. [PMID: 31715594 DOI: 10.1088/1361-6528/ab56d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Diamond nanowires (NWs) belong to an important class of nanoscale materials for their outstanding potential in mechanical, electrical, and thermal applications. However, their mechanical behavior under pristine and defective conditions remains less understood. This paper reveals a comprehensive understanding of the effective elastic behavior of diamond NWs, and it uncovers surface-softening as the dominant mechanism that regulates their effective behavior. We applied the force-based and energy-based approaches and constructed a comparative analysis to reveal the atomistic basis behind the diameter-dependent elastic properties of the nanowires. Our findings suggest the energy-based approach to produce physically meaningful results, whereas the widely used force-based scheme produces inconsistent size-dependent behavior. Results show that, with increasing diameter, the softening of the surface and the defective regimes decreases. As a direct consequence of the alteration in the softening state, the first-order elastic modulus increases with increasing diameter, whereas the second-order modulus decreases. Also, vacancy defects, even in very dilute concentrations, are found to substantially affect the elastic behavior of the nanowire. Furthermore, surface, core, and defective regimes exhibit very different roles in nanowires of different diameters: the surface regime acts as a softer regime and the core as stiffer, regardless of the diameter. Their cumulative effect is however dominated by the surface in smaller-diameter nanowire-but in wider diameter nanowires it is dominated by the core. As a result, the size-dependent behavior is strictly controlled by the softening state of the surface. The diameter-dependent elastic moduli show a power-law relation, which deviates substantially from the simple surface-to-volume ratio. These findings suggest surface-engineering as an important tool for modulating the effective behavior of brittle nanowires.
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Affiliation(s)
- Zhaocheng Zhang
- Laboratory of Mechanics & Physics of Heterogeneous Materials Department of Mechanical Engineering Center for Composite Materials University of Delaware, Newark, DE 19716, United States of America
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10
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Fonseka HA, Caroff P, Guo Y, Sanchez AM, Tan HH, Jagadish C. Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures. NANOSCALE RESEARCH LETTERS 2019; 14:399. [PMID: 31889237 PMCID: PMC6937364 DOI: 10.1186/s11671-019-3177-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2019] [Accepted: 10/03/2019] [Indexed: 06/10/2023]
Abstract
In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.
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Affiliation(s)
- H. Aruni Fonseka
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 Australia
- Department of Physics, University of Warwick, Coventry, CV4 7AL UK
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 Australia
- Current Address: Microsoft Station Q, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Yanan Guo
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 Australia
- Current Address: Samsung Austin Semiconductors, 12100 Samsung Blvd, Austin, TX 78754 USA
| | - Ana M. Sanchez
- Department of Physics, University of Warwick, Coventry, CV4 7AL UK
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 Australia
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11
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Li Q, Li C, Shang Q, Zhao L, Zhang S, Gao Y, Liu X, Wang X, Zhang Q. Lasing from reduced dimensional perovskite microplatelets: Fabry-Pérot or whispering-gallery-mode? J Chem Phys 2019; 151:211101. [DOI: 10.1063/1.5127946] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Qi Li
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qiuyu Shang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Liyun Zhao
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Shuai Zhang
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Yan Gao
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xinfeng Liu
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Xina Wang
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- Research Center for Wide Gap Semiconductor, Peking University, Beijing 100871, China
- The State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096, China
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12
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Adams MJ, Jevtics D, Strain MJ, Henning ID, Hurtado A. High-frequency dynamics of evanescently-coupled nanowire lasers. Sci Rep 2019; 9:6126. [PMID: 30992501 PMCID: PMC6467891 DOI: 10.1038/s41598-019-42526-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2018] [Accepted: 04/02/2019] [Indexed: 11/30/2022] Open
Abstract
We analyse the dynamics and conditions for stability in an array of two laterally-coupled nanowire lasers in terms of their separation, difference in resonant frequencies and pumping rate under conditions of weak coupling. We find that the regions of stability are very small and are found close to zero frequency offset between the lasers. Outside these regions various forms of instability including periodic oscillation, chaos and complex dynamics are predicted. Importantly, the analysis of the frequency of periodic oscillations for realistic laser separations and pumping yields values of order 100 GHz thus underlining the significant potential of nanowire laser arrays for ultra-high frequency on-chip systems with very low foot-print and energy requirements.
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Affiliation(s)
- M J Adams
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - D Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - M J Strain
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - I D Henning
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - A Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK.
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13
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Firestein KL, Kvashnin DG, Fernando JFS, Zhang C, Siriwardena DP, Sorokin PB, Golberg DV. Crystallography-Derived Young's Modulus and Tensile Strength of AlN Nanowires as Revealed by in Situ Transmission Electron Microscopy. NANO LETTERS 2019; 19:2084-2091. [PMID: 30786716 DOI: 10.1021/acs.nanolett.9b00263] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Aluminum nitride (AlN) has a unique combination of properties, such as high chemical and thermal stability, nontoxicity, high melting point, large energy band gap, high thermal conductivity, and intensive light emission. This combination makes AlN nanowires (NWs) a prospective material for optoelectronic and field-emission nanodevices. However, there has been very limited information on mechanical properties of AlN NWs that is essential for their reliable utilization in modern technologies. Herein, we thoroughly study mechanical properties of individual AlN NWs using direct, in situ bending and tensile tests inside a high-resolution TEM. Overall, 22 individual NWs have been tested, and a strong dependence of their Young's moduli and ultimate tensile strengths (UTS) on their growth axis crystallographic orientation is documented. The Young's modulus of NWs grown along the [101̅1] orientation is found to be in a range 160-260 GPa, whereas for those grown along the [0002] orientation it falls within a range 350-440 GPa. In situ TEM tensile tests demonstrate the UTS values up to 8.2 GPa for the [0002]-oriented NWs, which is more than 20 times larger than that of a bulk AlN compound. Such properties make AlN nanowires a highly promising material for the reinforcing applications in metal matrix and other composites. Finally, experimental results were compared and verified under a density functional theory simulation, which shows the pronounced effect of growth axis on the AlN NW mechanical behavior. The modeling reveals that with an increasing NW width the Young's modulus tends to approach the elastic constants of a bulk material.
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Affiliation(s)
- Konstantin L Firestein
- School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty , Queensland University of Technology (QUT) , 2nd George str. , Brisbane , Queensland 4000 , Australia
| | - Dmitry G Kvashnin
- National University of Science and Technology "MISiS" , Leninskiy Prospekt 4 , Moscow 119049 , Russian Federation
- Emanuel Institute of Biochemical Physics , Russian Academy of Sciences , Kosigina Street 4 , Moscow 119334 , Russian Federation
| | - Joseph F S Fernando
- School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty , Queensland University of Technology (QUT) , 2nd George str. , Brisbane , Queensland 4000 , Australia
| | - Chao Zhang
- School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty , Queensland University of Technology (QUT) , 2nd George str. , Brisbane , Queensland 4000 , Australia
| | - Dumindu P Siriwardena
- School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty , Queensland University of Technology (QUT) , 2nd George str. , Brisbane , Queensland 4000 , Australia
| | - Pavel B Sorokin
- National University of Science and Technology "MISiS" , Leninskiy Prospekt 4 , Moscow 119049 , Russian Federation
- Emanuel Institute of Biochemical Physics , Russian Academy of Sciences , Kosigina Street 4 , Moscow 119334 , Russian Federation
- Technological Institute for Superhard and Novel Carbon Materials , Centralnaya Street 7a , Troitsk 108840 , Russian Federation
| | - Dmitri V Golberg
- School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty , Queensland University of Technology (QUT) , 2nd George str. , Brisbane , Queensland 4000 , Australia
- International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS) , Namiki 1-1 , Tsukuba , Ibaraki 3050044 , Japan
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14
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Chen S, Yukimune M, Fujiwara R, Ishikawa F, Chen WM, Buyanova IA. Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire. NANO LETTERS 2019; 19:885-890. [PMID: 30608174 DOI: 10.1021/acs.nanolett.8b04103] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A coherent photon source emitting at near-infrared (NIR) wavelengths is at the heart of a wide variety of applications ranging from telecommunications and optical gas sensing to biological imaging and metrology. NIR-emitting semiconductor nanowires (NWs), acting both as a miniaturized optical resonator and as a photonic gain medium, are among the best-suited nanomaterials to achieve such goals. In this study, we demonstrate the NIR lasing at 1 μm from GaAs/GaNAs/GaAs core/shell/cap dilute nitride nanowires with only 2.5% nitrogen. The achieved lasing is characterized by an S-shape pump-power dependence and narrowing of the emission line width. Through examining the lasing performance from a set of different single NWs, a threshold gain, gth, of 4100-4800 cm-1, was derived with a spontaneous emission coupling factor, β, up to 0.8, which demonstrates the great potential of such nanophotonic material. The lasing mode was found to arise from the fundamental HE11a mode of the Fabry-Perot cavity from a single NW, exhibiting optical polarization along the NW axis. Based on temperature dependence of the lasing emission, a high characteristic temperature, T0, of 160 (±10) K is estimated. Our results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
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Affiliation(s)
- Shula Chen
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
| | - Mitsuki Yukimune
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Ryo Fujiwara
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Fumitaro Ishikawa
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
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15
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Xu WZ, Ren FF, Jevtics D, Hurtado A, Li L, Gao Q, Ye J, Wang F, Guilhabert B, Fu L, Lu H, Zhang R, Tan HH, Dawson MD, Jagadish C. Vertically Emitting Indium Phosphide Nanowire Lasers. NANO LETTERS 2018; 18:3414-3420. [PMID: 29781625 DOI: 10.1021/acs.nanolett.8b00334] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.
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Affiliation(s)
- Wei-Zong Xu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Fang-Fang Ren
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Dimitars Jevtics
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Antonio Hurtado
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Li Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Jiandong Ye
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
| | - Fan Wang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
- Institute for Biomedical Materials and Devices (IBMD), Faculty of Science , University of Technology Sydney , Sydney , New South Wales 2007 , Australia
| | - Benoit Guilhabert
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Hai Lu
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Rong Zhang
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210093 , China
- Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
| | - Martin D Dawson
- Institute of Photonics, SUPA Department of Physics , University of Strathclyde, Technology and Innovation Centre , 99 George Street , G1 1RD Glasgow , United Kingdom
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , Australian Capital Territory 2601 , Australia
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16
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Ren D, Ahtapodov L, Nilsen JS, Yang J, Gustafsson A, Huh J, Conibeer GJ, van Helvoort ATJ, Fimland BO, Weman H. Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature. NANO LETTERS 2018; 18:2304-2310. [PMID: 29502425 DOI: 10.1021/acs.nanolett.7b05015] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ∼6 kW/cm2 (75 μJ/cm2 per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of ∼129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.
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Affiliation(s)
| | | | | | - Jianfeng Yang
- Australian Centre for Advanced Photovoltaics , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Anders Gustafsson
- Solid-State Physics and NanoLund , Lund University , Box 118 , SE-22100 Lund , Sweden
| | | | - Gavin J Conibeer
- Australian Centre for Advanced Photovoltaics , University of New South Wales , Sydney , New South Wales 2052 , Australia
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17
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Measurement of Nanowire Optical Modes Using Cross-Polarization Microscopy. Sci Rep 2017; 7:17790. [PMID: 29259279 PMCID: PMC5736640 DOI: 10.1038/s41598-017-18193-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2017] [Accepted: 12/07/2017] [Indexed: 11/21/2022] Open
Abstract
A method to detect optical modes from vertical InGaAs nanowires (NWs) using cross-polarization microscopy is presented. Light scattered from the optical modes in the NWs is detected by filtering out the polarized direct reflection with a crossed polarizer. A spectral peak and a valley were seen to red-shift with increasing NW diameter in the measured spectra. The peak was assigned to scattering from the TE01 optical mode and the valley was an indication of the HE11 mode, based on finite-element and scattering matrix method simulations. The cross-polarization method can be used to experimentally determine the spectral positions of the TE01 and HE11 optical modes. The modes are significantly more visible in comparison to conventional reflectance measurements. The method can be beneficial in the characterization of NW solar cells, light-emitting diodes and lasers where precise mode control is required.
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18
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Zapf M, Röder R, Winkler K, Kaden L, Greil J, Wille M, Grundmann M, Schmidt-Grund R, Lugstein A, Ronning C. Dynamical Tuning of Nanowire Lasing Spectra. NANO LETTERS 2017; 17:6637-6643. [PMID: 28960998 PMCID: PMC5683696 DOI: 10.1021/acs.nanolett.7b02589] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2017] [Revised: 09/19/2017] [Indexed: 05/28/2023]
Abstract
Realizing visionary concepts of integrated photonic circuits, nanospectroscopy, and nanosensing will tremendously benefit from dynamically tunable coherent light sources with lateral dimensions on the subwavelength scale. Therefore, we demonstrate an individual nanowire laser based device which can be gradually tuned by reversible length changes of the nanowire such that uniaxial tensile stress is applied to the respective semiconductor gain material. By straining the device, the spontaneous excitonic emission of the nanowire shifts to lower energies caused by the bandgap reduction of the semiconductor. Moreover, the optical gain spectrum of the nanolaser can be precisely strain-tuned in the high excitation regime. The tuning of the emission does not affect the laser threshold of the device, which is very beneficial for practical applications. The applied length change furthermore adjusts the laser resonances inducing a redshift of the longitudinal modes. Thus, this concept of gradually and dynamically tunable nanolasers enables controlling and modulating the coherent emission on the nanoscale without changing macroscopic ambient conditions. This concept holds therefore huge impact on nanophotonic switches and photonic circuit technology.
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Affiliation(s)
- Maximilian Zapf
- Institute
for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Robert Röder
- Institute
for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Karl Winkler
- Institute
for Solid State Electronics, Vienna University
of Technology, Floragasse
7, 1040 Vienna, Austria
| | - Lisa Kaden
- Institute
for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Johannes Greil
- Institute
for Solid State Electronics, Vienna University
of Technology, Floragasse
7, 1040 Vienna, Austria
| | - Marcel Wille
- Felix
Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
| | - Marius Grundmann
- Felix
Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
| | - Rüdiger Schmidt-Grund
- Felix
Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany
| | - Alois Lugstein
- Institute
for Solid State Electronics, Vienna University
of Technology, Floragasse
7, 1040 Vienna, Austria
| | - Carsten Ronning
- Institute
for Solid State Physics, University of Jena, Max-Wien-Platz 1, 07743 Jena, Germany
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19
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Jevtics D, Hurtado A, Guilhabert B, McPhillimy J, Cantarella G, Gao Q, Tan HH, Jagadish C, Strain MJ, Dawson MD. Integration of Semiconductor Nanowire Lasers with Polymeric Waveguide Devices on a Mechanically Flexible Substrate. NANO LETTERS 2017; 17:5990-5994. [PMID: 28873314 DOI: 10.1021/acs.nanolett.7b02178] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Nanowire lasers are integrated with planar waveguide devices using a high positional accuracy microtransfer printing technique. Direct nanowire to waveguide coupling is demonstrated, with coupling losses as low as -17 dB, dominated by mode mismatch between the structures. Coupling is achieved using both end-fire coupling into a waveguide facet, and from nanowire lasers printed directly onto the top surface of the waveguide. In-waveguide peak powers up to 11.8 μW are demonstrated. Basic photonic integrated circuit functions such as power splitting and wavelength multiplexing are presented. Finally, devices are fabricated on a mechanically flexible substrate to demonstrate robust coupling between the on-chip laser source and waveguides under significant deformation of the system.
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Affiliation(s)
- Dimitars Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
| | - Antonio Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
| | - Benoit Guilhabert
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
| | - John McPhillimy
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
| | - Giuseppe Cantarella
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT2601, Australia
| | - Michael J Strain
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
| | - Martin D Dawson
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, Technology and Innovation Centre , 99 George Street, G1 1RD, Glasgow, United Kingdom
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20
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Chen S, Jansson M, Stehr JE, Huang Y, Ishikawa F, Chen WM, Buyanova IA. Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell Structure. NANO LETTERS 2017; 17:1775-1781. [PMID: 28170267 DOI: 10.1021/acs.nanolett.6b05097] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nanowire (NW) lasers operating in the near-infrared spectral range are of significant technological importance for applications in telecommunications, sensing, and medical diagnostics. So far, lasing within this spectral range has been achieved using GaAs/AlGaAs, GaAs/GaAsP, and InGaAs/GaAs core/shell NWs. Another promising III-V material, not yet explored in its lasing capacity, is the dilute nitride GaNAs. In this work, we demonstrate, for the first time, optically pumped lasing from the GaNAs shell of a single GaAs/GaNAs core/shell NW. The characteristic "S"-shaped pump power dependence of the lasing intensity, with the concomitant line width narrowing, is observed, which yields a threshold gain, gth, of 3300 cm-1 and a spontaneous emission coupling factor, β, of 0.045. The dominant lasing peak is identified to arise from the HE21b cavity mode, as determined from its pronounced emission polarization along the NW axis combined with theoretical calculations of lasing threshold for guided modes inside the nanowire. Even without intentional passivation of the NW surface, the lasing emission can be sustained up to 150 K. This is facilitated by the improved surface quality due to nitrogen incorporation, which partly suppresses the surface-related nonradiative recombination centers via nitridation. Our work therefore represents the first step toward development of room-temperature infrared NW lasers based on dilute nitrides with extended tunability in the lasing wavelength.
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Affiliation(s)
- Shula Chen
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Mattias Jansson
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Jan E Stehr
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Yuqing Huang
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Fumitaro Ishikawa
- Graduate School of Science and Engineering, Ehime University , Matsuyama 790-8577, Japan
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology, Linköping University , 58183, Linköping, Sweden
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21
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Choi W, Seabron E, Mohseni PK, Kim JD, Gokus T, Cernescu A, Pochet P, Johnson HT, Wilson WL, Li X. Direct Electrical Probing of Periodic Modulation of Zinc-Dopant Distributions in Planar Gallium Arsenide Nanowires. ACS NANO 2017; 11:1530-1539. [PMID: 28135065 DOI: 10.1021/acsnano.6b06853] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Selective lateral epitaxial (SLE) semiconductor nanowires (NWs), with their perfect in-plane epitaxial alignment, ability to form lateral complex p-n junctions in situ, and compatibility with planar processing, are a distinctive platform for next-generation device development. However, the incorporation and distribution of impurity dopants in these planar NWs via the vapor-liquid-solid growth mechanism remain relatively unexplored. Here, we present a detailed study of SLE planar GaAs NWs containing multiple alternating axial segments doped with Si and Zn impurities by metalorganic chemical vapor deposition. The dopant profile of the lateral multi-p-n junction GaAs NWs was imaged simultaneously with nanowire topography using scanning microwave impedance microscopy and correlated with infrared scattering-type near-field optical microscopy. Our results provide unambiguous evidence that Zn dopants in the periodically twinned and topologically corrugated p-type segments are preferentially segregated at twin plane boundaries, while Si impurity atoms are uniformly distributed within the n-type segments of the NWs. These results are further supported by microwave impedance modulation microscopy. The density functional theory based modeling shows that the presence of Zn dopant atoms reduces the formation energy of these twin planes, and the effect becomes significantly stronger with a slight increase of Zn concentration. This implies that the twin formation is expected to appear when a threshold planar concentration of Zn is achieved, making the onset and twin periodicity dependent on both Zn concentration and nanowire diameter, in perfect agreement with our experimental observations.
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Affiliation(s)
| | | | | | | | - Tobias Gokus
- neaspec GmbH, Bunsenstrasse 5, Martinsried, Munich D-821152, Germany
| | - Adrian Cernescu
- neaspec GmbH, Bunsenstrasse 5, Martinsried, Munich D-821152, Germany
| | - Pascal Pochet
- Laboratoire de Simulation Atomistique (L_Sim) , SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble F-38054, France
| | - Harley T Johnson
- Laboratoire de Simulation Atomistique (L_Sim) , SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble F-38054, France
| | - William L Wilson
- Center for Nanoscale Systems, Harvard University , 11 Oxford Street, Cambridge, Massachusetts 02138, United States
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22
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Saxena D, Jiang N, Yuan X, Mokkapati S, Guo Y, Tan HH, Jagadish C. Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers. NANO LETTERS 2016; 16:5080-5086. [PMID: 27459233 DOI: 10.1021/acs.nanolett.6b01973] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss calculations, we determine the nanowire dimensions required to minimize loss for the TE01 mode and determine the optimal thickness and number of QWs for minimizing the threshold sheet carrier density. In particular, we show that there is a limit to the minimum and maximum number of QWs that are required for room-temperature lasing. Based on our design, we grew nanowires of a suitable diameter containing eight uniform coaxial GaAs/AlGaAs MQWs. Lasing was observed at room temperature from optically pumped single nanowires and was verified to be from TE01 mode by polarization measurements. The GaAs MQW nanowire lasers have a threshold fluence that is a factor of 2 lower than that previously demonstrated for room-temperature GaAs nanowire lasers.
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Affiliation(s)
- Dhruv Saxena
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
| | - Nian Jiang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
| | - Xiaoming Yuan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
| | - Sudha Mokkapati
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
| | - Yanan Guo
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory, 2601, Australia
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23
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Gao Q, Dubrovskii VG, Caroff P, Wong-Leung J, Li L, Guo Y, Fu L, Tan HH, Jagadish C. Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays. NANO LETTERS 2016; 16:4361-7. [PMID: 27253040 DOI: 10.1021/acs.nanolett.6b01461] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
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Affiliation(s)
- Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Vladimir G Dubrovskii
- St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia
- Ioffe Physical Technical Institute of the Russian Academy of Sciences , Politekhnicheskaya 26, 194021 St. Petersburg, Russia
- ITMO University , Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Li Li
- Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Yanan Guo
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia
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24
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Burgess T, Saxena D, Mokkapati S, Li Z, Hall CR, Davis JA, Wang Y, Smith LM, Fu L, Caroff P, Tan HH, Jagadish C. Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires. Nat Commun 2016; 7:11927. [PMID: 27311597 PMCID: PMC4915017 DOI: 10.1038/ncomms11927] [Citation(s) in RCA: 60] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2016] [Accepted: 05/12/2016] [Indexed: 02/02/2023] Open
Abstract
Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.
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Affiliation(s)
- Tim Burgess
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Dhruv Saxena
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sudha Mokkapati
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zhe Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Christopher R Hall
- Centre for Quantum and Optical Science, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Jeffrey A Davis
- Centre for Quantum and Optical Science, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Yuda Wang
- Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA
| | - Leigh M Smith
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.,Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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25
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Guilhabert B, Hurtado A, Jevtics D, Gao Q, Tan HH, Jagadish C, Dawson MD. Transfer Printing of Semiconductor Nanowires with Lasing Emission for Controllable Nanophotonic Device Fabrication. ACS NANO 2016; 10:3951-8. [PMID: 26974392 DOI: 10.1021/acsnano.5b07752] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Accurate positioning and organization of indium phosphide (InP) nanowires (NWs) with lasing emission at room temperature is achieved using a nanoscale transfer printing (TP) technique. The NWs retained their lasing emission after their transfer to targeted locations on different receiving substrates (e.g., polymers, silica, and metal surfaces). The NWs were also organized into complex spatial patterns, including 1D and 2D arrays, with a controlled number of elements and dimensions. The developed TP technique enables the fabrication of bespoke nanophotonic systems using NW lasers and other NW devices as building blocks.
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Affiliation(s)
- Benoit Guilhabert
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde , Technology and Innovation Centre, 99 George Street, G1 1RD Glasgow, U.K
| | - Antonio Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde , Technology and Innovation Centre, 99 George Street, G1 1RD Glasgow, U.K
| | - Dimitars Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde , Technology and Innovation Centre, 99 George Street, G1 1RD Glasgow, U.K
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University , Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University , Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University , Canberra, ACT 2601, Australia
| | - Martin D Dawson
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde , Technology and Innovation Centre, 99 George Street, G1 1RD Glasgow, U.K
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26
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Zheng D, Wang J, Hu W, Liao L, Fang H, Guo N, Wang P, Gong F, Wang X, Fan Z, Wu X, Meng X, Chen X, Lu W. When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors. NANO LETTERS 2016; 16:2548-2555. [PMID: 26985983 DOI: 10.1021/acs.nanolett.6b00104] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
One-dimensional semiconductor nanowires (NWs) have been widely applied in photodetector due to their excellent optoelectronic characteristics. However, intrinsic carrier concentration at certain level results in appreciable dark current, which limits the detectivity of the devices. Here, we fabricated a novel type of ferroelectric-enhanced side-gated NW photodetectors. The intrinsic carriers in the NW channel can be fully depleted by the ultrahigh electrostatic field from polarization of P(VDF-TrFE) ferroelectric polymer. In this scenario, the dark current is significantly reduced and thus the sensitivity of the photodetector is increased even when the gate voltage is removed. Particularly, a single InP NW photodetector exhibits high-photoconductive gain of 4.2 × 10(5), responsivity of 2.8 × 10(5) A W(-1), and specific detectivity (D*) of 9.1 × 10(15) Jones at λ = 830 nm. To further demonstrate the universality of the configuration we also demonstrate ferroelectric polymer side-gated single CdS NW photodetectors with ultrahigh photoconductive gain of 1.2 × 10(7), responsivity of 5.2 × 10(6) A W(-1) and D* up to 1.7 × 10(18) Jones at λ = 520 nm. Overall, our work demonstrates a new approach to fabricate a controllable, full-depleted, and high-performance NW photodetector. This can inspire novel device structure design of high-performance optoelectronic devices based on semiconductor NWs.
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Affiliation(s)
- Dingshan Zheng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Jianlu Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Weida Hu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Hehai Fang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Nan Guo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Peng Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Fan Gong
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Xudong Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology , Hong Kong SAR, China
| | - Xing Wu
- Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China
| | - Xiangjian Meng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
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27
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Röder R, Sidiropoulos TPH, Buschlinger R, Riediger M, Peschel U, Oulton RF, Ronning C. Mode Switching and Filtering in Nanowire Lasers. NANO LETTERS 2016; 16:2878-2884. [PMID: 27007261 DOI: 10.1021/acs.nanolett.6b00811] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Coherent light sources confining the light below the vacuum wavelength barrier will drive future concepts of nanosensing, nanospectroscopy, and photonic circuits. Here, we directly image the angular emission of such a light source based on single semiconductor nanowire lasers. It is confirmed that the lasing switches from the fundamental mode in a thin ZnO nanowire to an admixture of several transverse modes in thicker nanowires approximately at the multimode cutoff. The mode competition with higher order modes substantially slows down the laser dynamics. We show that efficient photonic mode filtering in tapered nanowires selects the desired fundamental mode for lasing with improved performance including power, efficiency, and directionality important for an optimal coupling between adjacent nanophotonic waveguides.
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Affiliation(s)
| | | | | | | | | | - Rupert F Oulton
- Blackett Laboratory, Imperial College London , Prince Consort Road, SW7 2BZ London, United Kingdom
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28
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Lee HC, Na JY, Moon YJ, Park JS, Ee HS, Park HG, Kim SK. Three-dimensional grating nanowires for enhanced light trapping. OPTICS LETTERS 2016; 41:1578-1581. [PMID: 27192291 DOI: 10.1364/ol.41.001578] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We propose rationally designed 3D grating nanowires for boosting light-matter interactions. Full-vectorial simulations show that grating nanowires sustain high-amplitude waveguide modes and induce a strong optical antenna effect, which leads to an enhancement in nanowire absorption at specific or broadband wavelengths. Analyses of mode profiles and scattering spectra verify that periodic shells convert a normal plane wave into trapped waveguide modes, thus giving rise to scattering dips. A 200 nm diameter crystalline Si nanowire with designed periodic shells yields an enormously large current density of ∼28 mA/cm2 together with an absorption efficiency exceeding unity at infrared wavelengths. The grating nanowires studied herein will provide an extremely efficient absorption platform for photovoltaic devices and color-sensitive photodetectors.
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29
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Mayer B, Janker L, Loitsch B, Treu J, Kostenbader T, Lichtmannecker S, Reichert T, Morkötter S, Kaniber M, Abstreiter G, Gies C, Koblmüller G, Finley JJ. Monolithically Integrated High-β Nanowire Lasers on Silicon. NANO LETTERS 2016; 16:152-6. [PMID: 26618638 DOI: 10.1021/acs.nanolett.5b03404] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.
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Affiliation(s)
- B Mayer
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - L Janker
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - B Loitsch
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - J Treu
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - T Kostenbader
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - S Lichtmannecker
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - T Reichert
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - S Morkötter
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - M Kaniber
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - G Abstreiter
- Institute of Advanced Study, Technische Universität München , Lichtenbergstraße 2a, 85748 Garching, Germany
| | - C Gies
- Institute for Theoretical Physics, University of Bremen , 28334 Bremen, Germany
| | - G Koblmüller
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
| | - J J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, Garching 85748, Germany
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30
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Davies CL, Parkinson P, Jiang N, Boland JL, Conesa-Boj S, Tan HH, Jagadish C, Herz LM, Johnston MB. Low ensemble disorder in quantum well tube nanowires. NANOSCALE 2015; 7:20531-20538. [PMID: 26586279 DOI: 10.1039/c5nr06996c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We have observed very low disorder in high quality quantum well tubes (QWT) in GaAs-Al(0.4)Ga(0.6)As core-multishell nanowires. Room-temperature photoluminescence spectra were measured from 150 single nanowires enabling a full statistical analysis of both intra- and inter-nanowire disorder. By modelling individual nanowire spectra, we assigned a quantum well tube thickness, a core disorder parameter and a QWT disorder parameter to each nanowire. A strong correlation was observed between disorder in the GaAs cores and disorder in the GaAs QWTs, which indicates that variations in core morphology effectively propagate to the shell layers. This highlights the importance of high quality core growth prior to shell deposition. Furthermore, variations in QWT thicknesses for different facet directions was found to be a likely cause of intra-wire disorder, highlighting the need for accurate shell growth.
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Affiliation(s)
- Christopher L Davies
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK.
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